A method for manufacturing a semiconductor device, a semiconductor device, a lead frame structure and a moulding form

The method addresses the high cost and complexity of ceramic-based semiconductor packaging by integrating lead frame junctions and breaking means to expose terminals during encapsulation, achieving stable connections and efficient heat transfer without ceramic support.

WO2026120183A1 Publication Date: 2026-06-11NEXPERIA BV
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Patent Information

Application Number
PCT/EP2025/085752
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-12-06
Filing Date
2025-12-05
Publication Date
2026-06-11

AI Technical Summary

Technical Problem

Conventional semiconductor power packaging using ceramic substrates is costly due to high thermal conductivity materials, has significant CTE mismatch, and a longer thermal dissipation path, and faces challenges in cutting lead frame junctions after encapsulation due to full coverage by the encapsulation material.

Method used

A method for manufacturing semiconductor devices without a ceramic layer by using a lead frame structure with interconnecting junctions, mounting semiconductor dies, creating electrical connections, and interrupting lead frame junctions during encapsulation using a moulding form with breaking means to expose terminals, thereby eliminating the need for ceramic support and simplifying the process.

Benefits of technology

This method reduces costs, simplifies the manufacturing process, and ensures stable connections without gaps or openings, enhancing thermal and electrical performance by removing the ceramic layer and allowing for efficient heat transfer to a heat sink.

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Abstract

According to the first aspect, a method for manufacturing a semiconductor device is provided. The method provides a lead frame structure comprising an outer frame, an at least one lead frame die pad, an at least one lead frame terminal, and a plurality of lead frame junctions; b) mounting an at least one semiconductor die on the at least one lead frame die pad; c) mounting an at least one connecting element for creating electrical connection between the at least one semiconductor die and the at least one lead frame terminal; d) placing the lead frame structure, the at least one semiconductor die and the at least one connecting element in a molding form wherein the molding form comprises a breaking means for pressing and interrupting through the plurality of lead frame junctions; e) encapsulating by a mold compound the lead frame structure with the at least one semiconductor die and the at least one connecting element, such that at least part of the at least one lead terminal is exposed and thereby forming an encapsulated semiconductor device; f) interrupting, simultaneously with the encapsulation step in the molding form, the plurality of lead frame junctions in the lead frame structure between the at least one lead frame die pad and the at least one lead frame terminal by a pressing movement of the breaking means of the molding form locally through the plurality of lead frame junctions.
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