Back contact cell and photovoltaic system
By using a mixed doping layer of highly doped Group III, Group V and oxygen elements in the back contact solar cell, the problems of silicon wafer bulk region and surface defects were solved, the performance and gettering effect of photovoltaic cells were improved, and higher cell efficiency was achieved.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD
- Filing Date
- 2025-09-23
- Publication Date
- 2026-06-18
AI Technical Summary
The performance of existing photovoltaic cells is limited by defects in the bulk region and near the surface of the silicon wafer, especially by metallic impurities and complex oxide phases, which restricts performance improvement.
The back-contact solar cell design employs highly doped first and second mixed doped layers on the front surface and spacer region of a silicon substrate. The doping elements include Group III and Group V elements and oxygen, forming a high-concentration doped layer to reduce surface defects and improve bulk mass.
It effectively reduces surface defects in silicon substrates, improves the performance of back-contact solar cells, enhances the gettering effect and surface passivation capability of the cells, and strengthens the passivation effect of bulk defects.
Smart Images
Figure CN2025123364_18062026_PF_FP_ABST