Semiconductor color display chip, and preparation method therefor and application thereof
By stacking InGaN/GaN layers of different wavelengths on a driving substrate and using optical thin films to realize the transmission and reflection characteristics of light, the problem of realizing red, green, and blue three-primary-color InGaN quantum well structures has been solved, achieving efficient full-color display chip fabrication and improving the performance and reliability of display devices.
WO2026124234A1PCT designated stage Publication Date: 2026-06-18SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
- Filing Date
- 2025-11-27
- Publication Date
- 2026-06-18
Smart Images
Figure CN2025138248_18062026_PF_FP_ABST
Abstract
Disclosed in the present application are a semiconductor color display chip, and a preparation method thereof and an application thereof. The chip comprises a drive substrate, a first light-emitting unit, a second light-emitting unit and a third light-emitting unit, wherein each unit is directly bonded to the substrate; a first optical thin film structure layer is provided between a second bonding layer and the second light-emitting unit; a second optical thin film structure layer is provided between a third bonding layer and the third light-emitting unit; the first optical thin film structure layer has a transmission characteristic for light of a first wavelength and has a reflection characteristic for light of a second wavelength and a third wavelength; and the second optical thin film structure layer has a transmission characteristic for light of the first wavelength and the second wavelength and has a reflection characteristic for light of the third wavelength. In the present application, an integrated design and processing technique is used to construct optical layers having different transmission and reflection characteristics between light-emitting layers of different wavelengths, and the light-emitting units of different wavelengths are integrated by means of the drive substrate, thereby overcoming a limitation that the material of part of the light-emitting units cannot directly epitaxially grow.
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