Heat dissipation structure for glass-based interposer, and manufacturing method therefor

Abstract

The present application relates to the technical field of electronic device packaging, and in particular to a heat dissipation structure for a glass-based interposer, and a manufacturing method therefor. The present application provides a heat dissipation structure for a glass-based interposer, and a manufacturing method therefor. The heat dissipation structure for a glass-based interposer comprises a microcrystalline glass-based interposer. The microcrystalline glass-based interposer comprises microcrystalline glass and a plurality of through glass via (TGVs) passing through the upper and lower surfaces of the microcrystalline glass, and the plurality of TGVs are arranged at intervals in a thickness direction of the microcrystalline glass. The heat dissipation structure for a glass-based interposer and the manufacturing method therefor provided in the present application greatly enhance the heat dissipation performance of glass-based interposers while maintaining excellent dielectric properties thereof, thereby improving the service life and reliability of microwave devices.

Description

A glass-based adapter plate heat dissipation structure and its preparation method

[0001] This application claims priority to Chinese Patent Application No. CN202411797999.7, filed on December 9, 2024, entitled "A glass-based adapter plate heat dissipation structure and its preparation method", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application belongs to the field of electronic device packaging technology, and in particular relates to a glass-based adapter plate heat dissipation structure and its preparation method. Background Technology

[0003] The rise of smart terminals, 5G, and the Internet of Things has placed increasingly stringent demands on advanced packaging technologies for microelectronic devices. Among these, 2.5D / 3D integration, with its characteristics of miniaturization, lightweight design, and flexible construction, has seen rapid development in recent years. Adapter boards, as the foundation of 2.5D / 3D integration, are considered a crucial pathway to "beyond Moore's Law" and are expected to become the mainstream technology for advanced packaging.

[0004] Packaging refers to encapsulating electronic components such as integrated circuit chips in a casing, serving multiple functions including chip protection, ease of installation, and electrical connection. However, in the electronics industry, different manufacturers use different chip packaging standards and circuit board interface standards. Adapter boards, as intermediate transitional components, can effectively solve these standardization and compatibility issues.

[0005] Currently, adapter board technologies mainly include silicon-based adapter boards based on through-silicon vias (TSVs) and glass-based adapter boards based on through-glass vias (TGVs). Silicon-based adapter board technology is more mature, but it suffers from drawbacks such as high dielectric loss and high cost. Glass-based adapter boards, on the other hand, offer electrical insulation and are more readily available. Compared to silicon-based adapter boards, glass-based adapter boards offer superior dielectric properties and lower cost, and are considered an effective alternative to silicon-based adapter boards.

[0006] As packaging technology trends towards miniaturization, and chip performance improves while power consumption increases, especially for high-power chips, insufficient heat dissipation can lead to internal heat buildup, causing overheating and damage. Current technologies employ various heat dissipation structures for glass-based adapters to address different scenarios, such as using metal heat sinks to dissipate heat from the chip or device into the surrounding environment. However, regardless of the specific heat dissipation structure, the thermal conductivity of ordinary glass-based adapters is insufficient to meet the heat dissipation requirements of highly integrated devices.

[0007] Currently, when glass-based interposers are used in electronic devices, the heat transfer path is typically: electronic device → glass-based interposer → thermal interface material (TIM) → heat dissipation device. Due to current technological limitations, this heat transfer path is inefficient and cannot meet the heat dissipation requirements of high-power microwave devices. It easily leads to a rapid increase in local temperature, resulting in device failure. The main reasons for this are as follows:

[0008] (1) Due to the poor thermal conductivity of the glass body, the heat of ordinary glass-based adapter plates mainly depends on the dense array of copper pillars in the TGV of the adapter plate. The efficiency of heat transfer from the adapter plate to the thermal interface material is very low.

[0009] (2) Thermal interface materials are usually composed of a matrix and thermally conductive fillers. Since the intrinsic thermal conductivity of conventional matrix is ​​small and the thermally conductive fillers are randomly distributed in the matrix, the heat transfer efficiency inside the thermal interface material is also very low.

[0010] It is evident that current glass-based adapter boards are insufficient to meet the requirements of highly integrated microwave devices. Summary of the Invention

[0011] To address the technical problem of poor heat dissipation and easy failure of microwave devices caused by glass-based adapter plates, this application proposes a heat dissipation structure for glass-based adapter plates and its preparation method. While satisfying the excellent dielectric properties of glass-based adapter plates, it also greatly enhances their heat dissipation performance, thereby improving the service life and reliability of microwave devices.

[0012] This application provides a glass-based adapter plate heat dissipation structure, which includes a microcrystalline glass-based adapter plate;

[0013] The microcrystalline glass-based adapter plate includes microcrystalline glass and a plurality of TGV through holes penetrating the upper and lower surfaces of the microcrystalline glass, wherein the plurality of TGV through holes are arranged at intervals along the thickness direction of the microcrystalline glass.

[0014] In this application, the intrinsic thermal conductivity of the microcrystalline glass-based adapter plate is much higher than that of ordinary glass-based adapter plates. Therefore, after using the microcrystalline glass-based adapter plate in the heat dissipation structure, heat can be efficiently transferred from the adapter plate to the thermal interface material, thereby improving the overall heat dissipation performance of the heat dissipation structure and avoiding the failure of microwave devices.

[0015] Preferably, the microcrystalline glass is made of at least one of silicate glass, aluminosilicate glass, aluminate glass, and borate glass, and more preferably aluminosilicate glass;

[0016] Preferably, the thickness of the microcrystalline glass is 20-70 μm, the diameter of the plurality of TGV through holes is 30-200 μm, and the spacing between adjacent TGV through holes is 100-300 μm.

[0017] In this application, when the material of the microcrystalline glass is aluminosilicate glass, its constituent raw materials and their mass percentages include: SiO2 58-70%, Al2O3 14-20%, Na2O 5-10%, CaO 1-5%, MgO 1-5%, ZrO2 1-2%, and TiO2 2-3%.

[0018] Preferably, the heat dissipation structure further includes a thermal interface material layer and a heat sink;

[0019] The thermal interface material layer is located on the upper or lower surface of the microcrystalline glass-based adapter plate, and the heat sink is located on the surface of the thermal interface material layer away from the microcrystalline glass-based adapter plate.

[0020] Preferably, the thermal interface material layer comprises a matrix material and a thermally conductive filler filling the interior of the matrix material;

[0021] Preferably, the thermally conductive fillers are arranged at intervals along the thickness direction of the thermal interface material layer;

[0022] Preferably, the thickness of the thermal interface material layer is 15-30 μm.

[0023] Compared to the existing thermal interface material layers where the thermally conductive fillers are randomly distributed in the matrix material, this application controls the thermally conductive fillers to be arranged at intervals along the thickness direction of the thermal interface material layer, thereby enabling the heat conducted by the microcrystalline glass-based adapter plate to be transferred to the heat sink via a straight path, further improving the heat dissipation performance of the heat dissipation structure.

[0024] Preferably, the matrix material is at least one of silicone, silicone rubber, silicone rubber, polyurethane, epoxy resin, polyimide, and polyester, with polyurethane being the most preferred; the thermally conductive filler is at least one of carbon material, metal oxide, metal powder, and ceramic material, with graphene oxide nanosheets being the most preferred; the radiator is at least one of copper radiator, heat pipe radiator, water-cooled radiator, and composite material radiator, and the thickness of the radiator is preferably 50-100 μm.

[0025] In this application, when the matrix material is polyurethane, its thermal conductivity is 0.03-0.05 W / m·K, its elastic modulus is 0.5-3 MPa, and its operating temperature is -20-120℃; when the thermally conductive filler is graphene oxide nanosheets, the single-layer thickness is 0.3-0.4 nm, the stacking thickness is 0.1-5 μm, and the lateral dimension is 1-10 μm.

[0026] This application also provides a method for preparing the above-mentioned glass-based transition plate heat dissipation structure, comprising the following steps:

[0027] S1. After laser pretreatment of the glass, a latent shadow area to be microcrystallized and a latent shadow area to be formed by TGV through-hole are formed on the glass. The latent shadow area to be formed by TGV through-hole penetrates the upper and lower surfaces of the glass along the thickness direction of the glass, while the latent shadow area to be microcrystallized does not penetrate the upper and lower surfaces of the glass along the thickness direction of the glass.

[0028] S2. The glass that has undergone laser pretreatment is first heat-treated to form a microcrystalline glass in the latent shadow area to be microcrystallineized. Then, an etching process is performed to remove the glass except for the latent shadow area to be microcrystallineized, thus obtaining a microcrystalline glass-based adapter plate.

[0029] In this application, after laser pretreatment of the glass, a latent region for microcrystallization and TGV through-hole forming is formed on the glass. Then, heat treatment and chemical etching are performed to achieve simultaneous microcrystallization and TGV through-hole forming, thereby obtaining a microcrystalline glass-based adapter plate.

[0030] When a glass-ceramic substrate is fabricated by directly performing TGV through-hole molding on a glass-ceramic substrate, the uneven distribution of the microcrystalline phase and glass phase inside the glass-ceramic substrate will not only cause cracking during processing, but will also introduce micropore defects inside the glass-ceramic substrate. The thermal conductivity of the resulting glass-ceramic substrate is far lower than that of the glass-ceramic substrate obtained by the processing method of this application.

[0031] Preferably, in step S1, the wavelength of the laser pretreatment is 800-1000nm, the pulse width is 160-280fs, the power is 20-50W, and the scanning speed is 80-120mm / s; in step S2, the heat treatment includes heating followed by cooling; preferably, the heating temperature is 600-800℃, the time is 10-30min, and the heating rate is 1-10℃ / min; the cooling temperature is 100-150℃, and the cooling rate is 1-10℃ / min.

[0032] In this application, a single-source or dual-source infrared femtosecond laser can be used for laser preprocessing.

[0033] Preferably, the latent region to be microcrystallized and the latent region to be formed by TGV via are arranged in a square array with a diameter of 30-200 μm and an adjacent spacing of 100-300 μm. The lengths of the latent region to be microcrystallized and the latent region to be formed by TGV via satisfy the following formula:

[0034] The length of the latent region to be formed by TGV through-hole is L1, which is consistent with the glass thickness. The length of the latent region to be microcrystallized is L2. V1 is the etching rate of the latent region glass and V2 is the etching rate of the non-latent region glass.

[0035] Preferably, V1 is 0.5-0.8 μm / min and V2 is 1.8-2.2 μm / min.

[0036] In this application, the vertical length of the latent region to be microcrystallized relative to the non-laser-processed regions left on the upper and lower surfaces of the glass is (L1-L2) / 2.

[0037] In this application, the etching rate of chemical etching is different for latent region glass and non-latent region glass. Therefore, when the vertical length L2 of the latent region to be microcrystallized and the vertical length L1 of the latent region to be formed by TGV satisfy the above relationship in numerical terms, after chemical etching, all the glass except the latent region to be microcrystallized will be etched away, leaving only the glass in the microcrystallized area. This achieves simultaneous microcrystallization and TGV through-hole forming.

[0038] Preferably, the preparation method further includes the following steps:

[0039] S3. After plasma activation treatment of one surface of the microcrystalline glass-based adapter plate and the heat sink, a thermal interface material is coated on the surface of the microcrystalline glass-based adapter plate after plasma activation treatment to form a thermal interface material layer. Then, the surface of the heat sink after plasma activation treatment is attached to it (the thermal interface material layer). After electric field treatment and thermal curing treatment are performed in sequence, the heat dissipation structure of the glass-based adapter plate is obtained.

[0040] In this application, the thermal interface material is obtained by mixing a matrix and a thermally conductive filler using a magnetic stirrer; the thermal interface material can be uniformly coated on the surface of the microcrystalline glass using methods such as scraping or spin coating.

[0041] Preferably, the mixing temperature is 60-80℃, the mixing time is 25-45 min, and the stirring speed is 800-1200 rpm.

[0042] Preferably, in step S3, the activation medium for the plasma activation treatment is oxygen, the gas pressure is 80-120 Pa, the power is 200-300 W, the treatment time is 60-150 s, the oxygen flow rate is 30-60 sccm, and the working distance is 8-20 mm; the intensity of the electric field treatment is 80-120 V / cm, the time is 25-35 min, and the temperature of the thermal curing treatment is 60-80℃, and the time is 22-26 h.

[0043] The beneficial effects of this application are:

[0044] (1) The microcrystalline glass-based adapter plate of this application has the following advantages: high intrinsic thermal conductivity; high mechanical strength and low processing breakage rate; low dielectric loss factor, which is more suitable for high frequency signal transmission; low coefficient of thermal expansion and high dimensional stability; this microcrystalline glass-based adapter plate can significantly improve the overall thermal conductivity of the heat dissipation structure of the microcrystalline glass-based adapter plate.

[0045] (2) This application can simultaneously realize local microcrystallization and TGV through-hole forming, simplifying the process steps and avoiding the problem of product cracking caused by performing local microcrystallization and TGV forming in stages; furthermore, the microcrystallization area can be flexibly selected based on the overall structural design (such as the distribution area of ​​filler in TIM).

[0046] (3) This application uses an external electric field to orient the thermally conductive filler in the matrix, thereby achieving linear heat transfer and significantly improving the overall thermal conductivity of the heat dissipation structure of the microcrystalline glass-based adapter plate. Attached Figure Description

[0047] Figure 1 is a schematic diagram of the structure of the latent shadow area to be formed by TGV through-hole and the latent shadow area to be microcrystallized on the glass in Embodiment 1 of this application, wherein dM1 is the glass substrate, dM11 is the latent shadow to be microcrystallized, and dM12 is the latent shadow area to be formed by TGV through-hole.

[0048] Figure 2 is a schematic diagram of the structure of the microcrystalline glass-based adapter plate described in Embodiment 1 of this application;

[0049] Figure 3 is a schematic diagram of the heat dissipation structure of the glass-based adapter plate described in Embodiment 1 of this application;

[0050] In Figures 2 and 3, M1 is a microcrystalline glass-based adapter plate, M2 is a thermal interface material layer, M3 is a copper heat sink, M11 is a microcrystalline glass substrate, M12 is multiple TGV through holes, M21 is a polyurethane matrix, and M22 is graphene oxide filler. Detailed Implementation

[0051] Example 1

[0052] This embodiment proposes a glass-based transition plate heat dissipation structure, the preparation method of which includes:

[0053] S1. A single-source infrared femtosecond laser with a wavelength of 850nm, a pulse width of 180fs, a power of 25W, a scanning speed of 100mm / s, and a focal depth of 40μm is used to pre-treat the target area of ​​aluminosilicate glass with a thickness of 40μm (the raw materials and their mass percentages include: SiO2 65%, Al2O3 18%, Na2O 7%, CaO 3%, MgO 3%, ZrO2 1.5%, TiO2 2.5%), forming a latent region for TGV via forming with a depth of 40μm, a diameter of 50μm, and a spacing of 120μm. Then, the focal depth is adjusted to 30μm, and the remaining area of ​​the glass is pre-treated with laser to form a latent region for microcrystallization with a depth of 30μm. Untreated glass with a thickness of 5μm is left on the upper and lower surfaces of the latent region for microcrystallization, respectively. The specific structure is shown in Figure 1.

[0054] S2. The glass that has undergone laser pretreatment is first heated to 650°C at a rate of 10°C / min and held at that temperature for 15 min. Then, it is cooled to 120°C at a rate of 10°C / min and allowed to cool naturally to room temperature. At this point, the glass in the latent region where the TGV through-hole is to be formed and the glass in the latent region where microcrystallization is to be achieved form a microcrystalline glass. The glass is then immersed in an acid solution (the acid solution is obtained by mixing 40% HF, 70% HNO3, and 98% H2SO4 in a volume ratio of 1:1:1) for chemical etching. The etching rate of the glass without laser pretreatment is controlled to be 0.5 μm / min, and the etching rate of the microcrystalline glass is controlled to be 2.0 μm / min. After etching for 10 min, a microcrystalline glass-based adapter plate with a thickness of 30 μm, a TGV through-hole depth of 30 μm, a diameter of 50 μm, and a center-to-center distance of 120 μm between adjacent TGV through-holes is formed. The specific structure is shown in Figure 2.

[0055] S3. Polyurethane (thermal conductivity 0.05w / m·K, elastic modulus 1.5MPa, operating temperature -20-120℃) was mixed with 0.5wt% graphene oxide nanosheets (single layer thickness 0.4nm, stacking thickness 2μm, lateral dimension 5μm) and magnetically stirred for 30min until homogeneous. The mixing temperature was 65℃ and the stirring speed was 1000rpm to obtain the thermal interface material.

[0056] S4. Using oxygen as the activation medium, the gas pressure is adjusted to 100 Pa, the power to 220 W, the processing time to 90 s, the oxygen flow rate to 50 sccm, and the working distance to 13 mm. After plasma activation treatment of the microcrystalline glass-based adapter plate and the copper heat sink (thickness to 60 μm, thermal conductivity to 390 W / m·K), a 20 μm thick thermal interface material is uniformly coated on the plasma-activated surface of the microcrystalline glass-based adapter plate using a scraper. Then, the plasma-activated surface of the copper heat sink is attached. After being placed under a vertical DC electric field of 100 V / cm for 30 min, it is cured at 60 °C for 24 h to obtain the heat dissipation structure of the glass-based adapter plate. The specific structure is shown in Figure 3.

[0057] The heat dissipation structure of the glass-based adapter plate proposed in this embodiment essentially includes: a microcrystalline glass-based adapter plate, a thermal interface material layer, and a copper heat sink; the thermal interface material layer is located on the upper or lower surface of the microcrystalline glass-based adapter plate, and the copper heat sink is located on the surface of the thermal interface material layer away from the microcrystalline glass-based adapter plate.

[0058] The microcrystalline glass-based adapter plate includes a 30μm thick microcrystalline glass and multiple TGV through holes penetrating the upper and lower surfaces of the microcrystalline glass. The diameter of the TGV through holes is 50μm, the depth of the TGV through holes is 30μm, and the center-to-center distance between adjacent TGV through holes is 120μm. The thermal interface material layer is composed of a polyurethane matrix and graphene oxide fillers arranged at intervals along the thickness direction of the thermal interface material layer.

[0059] Referring to Figure 1, after laser pretreatment, the glass substrate dM11 of this embodiment has a latent shadow region dM12 to be formed for TGV through-hole molding and a latent shadow region dM11 to be microcrystallized.

[0060] Referring to Figure 2, the microcrystalline glass substrate adapter plate described in this embodiment is referred to as structure M1, which is composed of a microcrystalline glass substrate M11 and multiple TGV through holes M12 penetrating the upper and lower surfaces of the microcrystalline glass substrate M11.

[0061] Referring to Figure 3, the heat dissipation structure of the glass-based adapter plate in this embodiment consists of three structures: a microcrystalline glass-based adapter plate M1, a thermal interface material layer M2, and a copper heat sink M3. The thermal interface material layer M2 is composed of a polyurethane matrix M21 and graphene oxide filler M22 arranged vertically to the thermal interface material layer.

[0062] Example 2

[0063] This embodiment proposes a glass-based adapter plate heat dissipation structure, the preparation method of which is the same as that of Embodiment 1, except that in step S1, a single-source infrared femtosecond laser with a laser wavelength of 900nm, a pulse width of 200fs, a power of 25W, a scanning speed of 100mm / s, and a focal depth of 60μm is used to perform laser pretreatment on the target area of ​​aluminosilicate glass with a thickness of 60μm to form a latent shadow area to be formed by TGV through-holes with a depth of 60μm, a diameter of 80μm, and a spacing of 150μm; then the focal depth is adjusted to 45μm, and the remaining area of ​​the glass is laser pretreated to form a latent shadow area to be microcrystallized with a depth of 45μm. The latent shadow area to be microcrystallized has 7.5μm thick untreated glass on the upper and lower surfaces of the glass, respectively.

[0064] In step S2, etching is performed for 15 minutes to form a microcrystalline glass-based adapter plate with a thickness of 45 μm, a TGV via depth of 45 μm, a diameter of 80 μm, and a center-to-center spacing of 150 μm between adjacent TGV vias; in step S3, the lateral connection size of the graphene oxide nanosheets is 45 μm.

[0065] Example 3

[0066] This embodiment proposes a glass-based adapter plate heat dissipation structure, the preparation method of which is the same as that of Embodiment 1, except that in step S1, a single-source infrared femtosecond laser with a laser wavelength of 950nm, a pulse width of 220fs, a power of 35W, a scanning speed of 100mm / s, and a focal depth of 80μm is used to perform laser pretreatment on the target area of ​​aluminosilicate glass with a thickness of 80μm to form a latent shadow area to be formed by TGV through-holes with a depth of 80μm, a diameter of 100μm, and a spacing of 180μm; then the focal depth is adjusted to 80μm, and the remaining area of ​​the glass is laser pretreated to form a latent shadow area to be microcrystallized with a depth of 60μm. A 10μm thick layer of untreated glass is left on the upper and lower surfaces of the glass to be microcrystallized.

[0067] In step S2, etching is performed for 20 minutes to form a microcrystalline glass-based adapter plate with a thickness of 60 μm, a TGV via depth of 60 μm, a diameter of 100 μm, and a center-to-center spacing of 180 μm between adjacent TGV vias; in step S3, the lateral connection size of the graphene oxide nanosheets is 45 μm.

[0068] Comparative Example 1

[0069] This comparative example proposes a glass-based adapter plate heat dissipation structure, which is prepared in the same way as in Example 1, except that the step of "placing it under a vertical DC electric field of 100V / cm for 30 minutes" is omitted in step S4.

[0070] Comparative Example 2

[0071] This comparative example proposes a glass-based adapter plate heat dissipation structure, the preparation method of which is the same as that of Example 1, except that the operation of "re-adjusting the focal depth to 30μm, performing laser pretreatment on the remaining area of ​​the glass to form a latent shadow area to be microcrystallized with a depth of 30μm, and leaving a layer of untreated glass with a thickness of 5μm on the upper and lower surfaces of the glass respectively" is omitted in step S1.

[0072] Comparative Example 3

[0073] This comparative example proposes a glass-based transition plate heat dissipation structure, the preparation method of which is the same as that in Example 1, except that in step S1, a single-source infrared femtosecond laser with a laser wavelength of 850nm, a pulse width of 180fs, a power of 25W, a scanning speed of 100mm / s, and a focal depth of 30μm is used to perform laser pretreatment on a 30μm thick aluminosilicate glass (the raw materials and their mass percentages include: SiO2 65%, Al2O3 18%, Na2O 7%, CaO 3%, MgO 3%, ZrO2 1.5%, TiO2 2.5%), forming a fully microcrystalline latent image with a depth of 30μm on the glass;

[0074] In step S2, the glass that has undergone laser pretreatment is first heated to 650°C at a rate of 10°C / min, held at that temperature for 15 min, and then cooled to 120°C at a rate of 10°C / min. After that, it is allowed to cool naturally to room temperature, at which point the glass forms a microcrystalline glass. Then, a laser etching process (using a single-source infrared femtosecond laser with a laser wavelength of 1050nm, a power of 30W, a scanning speed of 50mm / s, and a repetition frequency of 200kHz) is used to form TGV vias with a depth of 30μm, a diameter of 50μm, and a center-to-center distance of 120μm between adjacent TGV vias on the microcrystalline glass.

[0075] Comparative Example 4

[0076] This comparative example proposes a glass-based adapter plate heat dissipation structure, the preparation method of which is the same as that of Example 1, except that the operation of "adjusting the focal depth to 30μm, performing laser pretreatment on the remaining area of ​​the glass to form a latent shadow area to be microcrystallized with a depth of 30μm, and leaving a 5μm thick untreated glass on the upper and lower surfaces of the latent shadow area to be microcrystallized" is omitted in step S1.

[0077] In step S2, the laser-pretreated glass is first heated to 650°C at a rate of 10°C / min, held at that temperature for 15 minutes, and then cooled to 120°C at a rate of 10°C / min. It is then allowed to cool naturally to room temperature, at which point microcrystalline glass is formed in the latent region of the TGV via. The glass is then immersed in acid for chemical etching, controlling the etching rate of the untreated glass to be 0.5 μm / min and the etching rate of the microcrystalline glass to be 2.0 μm / min. After etching for 10 minutes, a 30 μm thick TGV via with a depth of 30 μm and a diameter of 50 μm is formed. A standard glass-based adapter plate with a diameter of μm and a center-to-center distance between adjacent TGV vias of 120 μm is used. This standard glass-based adapter plate is pre-treated by a single-source infrared femtosecond laser with a wavelength of 850 nm, a pulse width of 180 fs, a power of 25 W, a scanning speed of 100 mm / s, and a focal depth of 30 μm. The pre-treated glass is then heated to 650 °C at a rate of 10 °C / min, held at that temperature for 15 min, and then cooled to 120 °C at a rate of 10 °C / min. Finally, it is allowed to cool naturally to room temperature. At this point, the standard glass-based adapter plate is transformed into a microcrystalline glass-based adapter plate.

[0078] The performance of the heat dissipation structure of the glass-based adapter plate obtained in the above embodiments and comparative examples is shown in Table 1 below:

[0079] Table 1. Performance test results of the glass-based transition plate heat dissipation structure described in the embodiments and comparative examples.

[0080] As shown in Table 1 above, in Comparative Example 1, because the thermal interface material was not treated in a DC electric field after coating, the thermally conductive filler was distributed randomly in the matrix material. Heat could not be transferred from the thermal interface material layer to the heat sink along a straight path, resulting in a very low thermal conductivity of the glass-based adapter plate heat dissipation structure. In Comparative Example 2, because laser pretreatment was not used to form the microcrystallization region in the aluminosilicate glass, the resulting heat dissipation structure used a common glass-based adapter plate instead of a microcrystalline glass-based adapter plate. Therefore, the thermal conductivity was low, and heat could not be effectively transferred from the glass-based adapter plate to the thermal interface material. In Comparative Example 3, because local microcrystallization and TGV forming were not performed simultaneously, but rather a TGV via array was directly formed in the aluminosilicate microcrystalline glass through laser etching, although a microcrystalline glass-based adapter plate was obtained, the introduction of microcracks and micropores inside the microcrystalline glass during laser etching of the TGV vias resulted in a still low thermal conductivity of the glass-based adapter plate heat dissipation structure. In Comparative Example 4, since the local microcrystallization and TGV molding were not carried out synchronously, but rather the local microcrystallization was carried out on the glass substrate with the TGV through-hole structure through laser pretreatment and heat treatment, although a microcrystalline glass-based adapter plate was finally obtained, the thermal conductivity of the heat dissipation structure of the glass adapter plate was still low. Furthermore, since the local microcrystallization and TGV molding were not carried out synchronously, the product was prone to cracking.

[0081] The above description is merely a preferred embodiment of this application, but the scope of protection of this application is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in this application, based on the technical solution and inventive concept of this application, should be included within the scope of protection of this application.

Claims

1. A glass-based adapter plate heat dissipation structure, characterized in that, The glass-based adapter plate heat dissipation structure includes a microcrystalline glass-based adapter plate. The microcrystalline glass-based adapter plate includes microcrystalline glass and a plurality of TGV through holes penetrating the upper and lower surfaces of the microcrystalline glass, wherein the plurality of TGV through holes are arranged at intervals along the thickness direction of the microcrystalline glass.

2. The heat dissipation structure of the glass-based adapter plate according to claim 1, characterized in that, The microcrystalline glass is made of at least one of silicate glass, aluminosilicate glass, aluminate glass, and borosilicate glass. The thickness of the microcrystalline glass is 20-70 μm, the diameter of the plurality of TGV through holes is 30-200 μm, and the spacing between adjacent TGV through holes is 100-300 μm.

3. The heat dissipation structure of the glass-based transition plate according to any one of claims 1-2, characterized in that, The heat dissipation structure also includes a thermal interface material layer and a heat sink; The thermal interface material layer is located on the upper or lower surface of the microcrystalline glass-based adapter plate, and the heat sink is located on the surface of the thermal interface material layer away from the microcrystalline glass-based adapter plate.

4. The heat dissipation structure of the glass-based adapter plate according to claim 3, characterized in that, The thermal interface material layer includes a matrix material and a thermally conductive filler filling the interior of the matrix material; The thermally conductive fillers are arranged at intervals along the thickness direction of the thermal interface material layer. The thickness of the thermal interface material layer is 15-30 μm.

5. The heat dissipation structure of the glass-based adapter plate according to claim 4, characterized in that, The matrix material is at least one of silicone, silicone rubber, silicone rubber, polyurethane, epoxy resin, polyimide and polyester; The thermally conductive filler is at least one of carbon materials, metal oxides, metal powders, and ceramic materials; The radiator is at least one of copper radiator, heat pipe radiator, water-cooled radiator and composite material radiator, and the thickness of the radiator is 50-100μm.

6. A method for preparing the heat dissipation structure of the glass-based transition plate according to any one of claims 1-5, characterized in that, Includes the following steps: S1. After laser pretreatment of the glass, a latent shadow area to be microcrystallized and a latent shadow area to be formed by TGV through-hole are formed on the glass. The latent shadow area to be formed by TGV through-hole penetrates the upper and lower surfaces of the glass along the thickness direction of the glass, while the latent shadow area to be microcrystallized does not penetrate the upper and lower surfaces of the glass along the thickness direction of the glass. S2. The glass that has undergone laser pretreatment is first heat-treated to form a microcrystalline glass in the latent shadow area to be microcrystallineized. Then, an etching process is performed to remove the glass except for the latent shadow area to be microcrystallineized, thus obtaining a microcrystalline glass-based adapter plate.

7. The preparation method according to claim 6, characterized in that, In step S1, the wavelength of the laser preprocessing is 800-1000nm, the pulse width is 160-280fs, the power is 20-50W, and the scanning speed is 80-120mm / s; In step S2, the heat treatment includes a heating treatment followed by a cooling treatment; the heating treatment is performed at a temperature of 600-800℃ for a time of 10-30 min, with a heating rate of 1-10℃ / min; the cooling treatment is performed at a temperature of 100-150℃, with a cooling rate of 1-10℃ / min.

8. The preparation method according to claim 6 or 7, characterized in that, The latent regions to be microcrystallized and the latent regions to be formed by TGV vias are arranged in a square array with a diameter of 30-200 μm and an adjacent spacing of 100-300 μm, and the lengths of the latent regions to be microcrystallized and the latent regions to be formed by TGV vias satisfy the following formula: Where L1 is the length of the latent region to be formed by TGV through-hole, L2 is the length of the latent region to be microcrystallized, V1 is the etching rate of the latent region glass, and V2 is the etching rate of the non-latent region glass. The V1 is 0.5-0.8 μm / min, and the V2 is 1.8-2.2 μm / min.

9. The preparation method according to claim 6 or 7, characterized in that, It also includes the following steps: S3. After plasma activation treatment of one surface of the microcrystalline glass-based adapter plate and the heat sink, a thermal interface material is coated on the plasma-activated surface of the microcrystalline glass-based adapter plate to form a thermal interface material layer. Then, the plasma-activated surface of the heat sink is attached to the thermal interface material layer. After electric field treatment and thermal curing treatment in sequence, the heat dissipation structure of the glass-based adapter plate is obtained.

10. The preparation method according to claim 9, characterized in that, In step S3, the activation medium for the plasma activation treatment is oxygen, the gas pressure is 80-120 Pa, the power is 200-300 W, the treatment time is 60-150 s, the oxygen flow rate is 30-60 sccm, and the working distance is 8-20 mm; the intensity of the electric field treatment is 80-120 V / cm, the time is 25-35 min, and the temperature of the thermal curing treatment is 60-80℃, the time is 22-26 h.

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