Method for operating a CMOS image sensor, CMOS image sensor, and use thereof

Abstract

The invention relates to a method for the rapid and energy-efficient operation of a CMOS image sensor (1), which can be used in particular in laser triangulation or similar methods that map a light line with a Gaussian intensity curve onto the CMOS image sensor (1). The method according to the invention is characterized in particular in that the brightness (Hiv;ih) of the individual pixels (2) is determined solely on the basis of timestamps (ti) stored in a memory (33) such that the pixels (2), and thus the CMOS image sensor (1), are prevented from being overexposed and the image sensor dynamics are correspondingly increased. In addition, only the pixel information (timestamp (ti) and position (iv; ih)) of pixels (2) subjected to an exposure which has reached a specified threshold value (T) is processed, and unexposed pixels (2) are not taken into consideration. Because the power consumption of an image sensor is proportional to the data throughput, the data processing and transmission optimized according to the invention do not only lead to an increase in the scanning rate but also to a lower power consumption and thus to a particularly energy-efficient operation of the CMOS image sensor (1)

Description

[0001] IP Ventures UG (limited liability) - 1 / 44 - December 10, 2025

[0002] D-82069 Schäftlarn S91154 WO HL / NU / ch

[0003] METHOD FOR OPERATING A CMOS IMAGE SENSOR AND THE CMOS IMAGE SENSOR AND ITS USE

[0004] The present invention relates to a method for operating a CMOS (complementary metal oxide semiconductor) image sensor, which can be used in particular in object measurement and / or object inspection methods in which only a part of the pixels of a CMOS image sensor is exposed.

[0005] In a number of object measurement and / or object inspection methods, one or more individual light points or one or more light lines are detected using a CMOS image sensor, so that only a small part of the pixels of the CMOS image sensor is exposed and the rest of the pixels remain unexposed.

[0006] In the field of 3D object or surface inspection and / or surveying, for example, laser triangulation involves projecting a laser light point or laser line onto a measurement object from one direction and observing the reflected light from another direction with a sensor. If the distance between the laser generator and the sensor, as well as the angle between the laser beam and the observation direction, is known, the distance to the measurement object can be determined. Within scanning methods based on this laser triangulation, the laser beam is moved across the object under investigation, thereby detecting one or more reflection points or lines moving across the CMOS image sensor. Other examples in this field include optical coherence methods and so-called...“Flying spot applications” involve moving a single laser point across a surface under investigation using a galvanic laser or a MEMS (microelectronic-mechanical systems) laser. In the 2D domain, an example would be X-ray single-crystal diffractometry, in which monochromatic X-rays are scattered by the atoms of a crystal lattice and detected by a CMOS image sensor in the form of so-called “single-crystal diffractograms”.

[0007] Conventional image sensors are only conditionally suitable for use in such processes, where a large proportion of the image sensor pixels remain unexposed. IP Ventures UG (limited liability) - 2 / 44 - December 10, 2025

[0008] D-82069 Schäftlarn S91154 WO HL / NU / ch

[0009] For example, if the reflected light from a laser line reflected off a measuring object is imaged onto a sensor matrix of pixels arranged regularly in rows and columns, the laser line often lies primarily horizontally in the image and covers only a small number of pixels per column (e.g., 10 pixels / column). Assuming that only the brightest four of these 10 pixels are truly relevant, a column length of 1000 pixels / column results in a coverage of only 0.4% of the entire image area. The majority of pixels in a column thus remain unexposed or contribute nothing relevant to the image information, yet are still read out to a disadvantage by conventional image sensors.Since the number of pixels to be read determines the frame rate and thus the scan rate of a sensor used in laser triangulation or similar methods, conventional image sensors therefore slow down the scanning process and are inefficient.

[0010] One way to address this problem with CMOS image sensors is to limit the readout area, both in terms of rows and columns, to smaller regions—a process known as windowing. This improves the ratio of relevant pixels read to the total number of pixels read, but it still results in a majority of pixels with little to no information being read. Furthermore, limiting the readout area also reduces the image area (measurement range).

[0011] Another problem with using conventional image sensors in laser triangulation or similar methods lies in the sometimes very large differences in brightness that need to be detected. Matte white surfaces of measurement objects are significantly brighter than black or glossy surfaces. Differences of 100:1 or more in the intensity of reflected light are not uncommon. The dynamic range of conventional image sensors is far from sufficient to cover these large brightness differences. While established operating methods for image sensors, such as multiple exposure, offer a good compromise, they negatively slow down the sensor's scan rate. The use of amplifiers with logarithmic or multiple-slope characteristics compromises accuracy because these approaches shift the center of brightness.When using amplifiers with a linear characteristic curve, at least 16-bit ADCs (analog / digital converters) would be required to achieve sufficient dynamics. IP Ventures UG (limited liability) - 3 / 44 - December 10, 2025.

[0012] D-82069 Schäftlarn S91154 WO HL / NU / ch. As a result, both the hardware requirements and power consumption would increase drastically.

[0013] Based on this, the present invention aims to provide a method for operating a CMOS image sensor, or a CMOS image sensor and its use, in which no saturation occurs and whose dynamic range, i.e., the ratio between the maximum and minimum measurable number of electrons of the saturation capacitance, is practically arbitrarily high, preferably at least 100 dB. Furthermore, the scan rate should be as high as possible, while simultaneously avoiding any limitation of the image or measurement range.

[0014] This problem is first solved by a method for operating a CMOS image sensor with the features of independent claim 1 and by a CMOS image sensor with the features of dependent claim 16.

[0015] A CMOS image sensor according to the invention comprises at least a regular arrangement of pixels in columns and rows; wherein the pixels each comprise at least one photodetector and at least one comparator; and a control unit, wherein the control unit comprises a counting unit for processing a clock signal and for generating time markers, and at least one memory; and wherein the control unit is configured to specify at least one threshold for a photon incidence.

[0016] A method according to the invention for operating such a CMOS image sensor comprises at least the following method steps:

[0017] Resetting the pixel voltage of the photodetectors of all pixels to a defined initial value;

[0018] Reset all timestamps to zero;

[0019] Clearing the memory;

[0020] Starting the clock signal when an exposure of the CMOS image sensor begins;

[0021] Detecting each photon incidence using the photodetector of the respective pixel; IP Ventures UG (limited liability) - 4 / 44 - December 10, 2025

[0022] D-82069 Schäftlarn S91154 WO HL / NU / ch

[0023] Comparing the actual value of the detected photon incidence at each pixel with the threshold value for photon incidence specified by the control unit using the respective comparator of the respective pixel; if the threshold value is exceeded at a pixel, generating a timestamp for that pixel by the counting unit;

[0024] Storing the timestamp for this pixel in memory;

[0025] Reading the memory; and

[0026] Determining the brightness of individual pixels based on the timestamps stored in memory.

[0027] The inventive method advantageously processes only pixel information (time stamp and, if applicable, position) of pixels whose exposure has reached a predefined threshold. Unexposed pixels are ignored. Since only relevant pixels are read out, the inventive method is characterized by very high efficiency and a very high frame rate or scan rate, and thus high speed. Compared to efficiency-enhancing methods such as state-of-the-art windowing, which also do not read out and process all pixels of an image sensor, the inventive method can advantageously utilize the entire image area of ​​the CMOS image sensor. Selection of the readout area through windowing, and thus the corresponding configuration effort, is eliminated.

[0028] Furthermore, the inventive method advantageously determines the brightness of individual pixels solely based on the time stamps stored in memory. The inventive method advantageously utilizes the fact that the brightness of a pixel is inversely proportional to its assigned time stamp: the higher the photon incidence on a particular pixel, the faster a predefined threshold is exceeded, and the smaller the counter value that a counting unit assigns to the respective pixel as a time stamp. The individual pixel signals, and in particular the pixel voltages stored in integrating capacitors, are used only for comparison with the aforementioned threshold and are not processed further. The threshold can be chosen significantly below the saturation value of the pixels, thus advantageously avoiding overexposure of the pixels and consequently of the image sensor. Moreover, for evaluation or...Further processing of pixel data is advantageous without waiting for another clock signal or the end of the exposure of the entire image sensor. IP Ventures UG (limited liability) - 5 / 44 - December 10, 2025.

[0029] D-82069 Schäftlarn S91154 WO HL / NU / ch

[0030] The moment a timestamp is assigned to a pixel, this value is available for further processing. CMOS image sensors operated using the method according to the invention therefore advantageously exhibit very short latency times.

[0031] The method according to the invention advantageously improves the data transmission from the pixel field of the CMOS image sensor by considering only relevant pixels. Since the power consumption of an image sensor is proportional to the data throughput, less data advantageously leads to lower power consumption and thus to particularly energy-efficient operation.

[0032] Further advantageous designs and advanced features, which can be used individually or in combination, are the subject of the respective dependent claims.

[0033] In a preferred embodiment of the method, it has proven advantageous if the memory is at least a columnar memory, in particular a columnar memory operated according to the FIFO ("first in, first out") principle, and the timestamp generated for a specific pixel is stored in the columnar memory together with a vertical position of the pixel, in particular with the respective row number of the CMOS image sensor of the respective pixel. With this storage variant, the horizontal position, in particular the column coordinate, of the pixel advantageously does not need to be stored, which saves memory space and speeds up the storage process. In an embodiment of the invention in which, for example, two columnar memories are provided, these can advantageously be operated alternately.For example, one of the two column memories can be written to while the other is being read, thus advantageously increasing the sampling rate of the CMOS image sensor. Alternatively or cumulatively, the memory can also be at least one row memory, in particular a row memory operated according to the FIFO ("first in, first out") principle, and the timestamp generated for a specific pixel, together with a horizontal position of the pixel, in particular with the respective column number of the CMOS image sensor of the respective pixel, can be stored in the row memory.

[0034] Alternatively, a design of the procedure has proven effective in which the storage is at least a global storage system, in particular one based on FIFO (first in, first out) - IP Ventures UG (limited liability) - 6 / 44 - December 10, 2025

[0035] D-82069 Schäftlarn S91154 WO HL / NU / ch

[0036] The principle of a global memory system is to store the timestamp generated for a specific pixel, along with the horizontal and vertical position of that pixel on the CMOS image sensor, and specifically the column and row numbers of that pixel. Before reading the memory, the stored value triples, comprising the timestamp and the corresponding horizontal and vertical positions of the pixel, can be sorted by column or row. With this storage method, after the image acquisition or scanning process is complete, all data records are advantageously available pre-sorted by column or row for further processing.

[0037] In a further preferred embodiment of the method, it has proven advantageous if the control unit specifies two or more threshold values ​​and each pixel correspondingly comprises two or more comparators, in particular one comparator for each threshold value specified by the control unit. The ability to specify at least one threshold value via the control unit advantageously allows, among other things, adjustment to the laser intensity, exposure time, and the properties of the object surface under investigation (reflectivity). If each pixel comprises two or more comparators, the respective stored pixel voltage can advantageously be compared with two or more threshold values ​​specified by the control unit, thereby generating and assigning a time marker earlier, particularly for darker pixels.Such a design also makes it possible, in particular, to provide a higher threshold for the brightness maximum and lower thresholds for the secondary values, thereby advantageously reducing motion blur and improving the simultaneity of brightness detection. Furthermore, such a design with two or more thresholds specified by the control unit and correspondingly two or more comparators per pixel advantageously enables the measurement of the laser intensity gradient, which, among other things, advantageously allows for compensation of the pressure level of the CMOS image sensor.

[0038] Furthermore, it is advantageous if the generation and storage of timestamps for pixels within a column is aborted after a predetermined number of pixels, in particular after 2, 3, 4, 5, 6, or more pixels, where the predetermined number IP Ventures UG (limited liability) - 7 / 44 - December 10, 2025

[0039] D-82069 Schäftlarn S91154 WO HL / NU / ch of pixels, preferably even-numbered, in particular 2, 4, or 6 pixels. Aborting the generation and storage of timestamps for pixels within a column after a predetermined number of pixels advantageously increases the evaluation speed of the CMOS image sensor and saves memory space. Furthermore, power consumption is advantageously reduced. In particular, when using the CMOS image sensors according to the invention in laser triangulation for measuring 3D objects (machine parts, etc.) or for 3D object acquisition, this approach can be advantageously used to increase efficiency, since the laser line focused on the object under investigation usually covers only a small number of pixels—generally three pixels—within a column and has a Gaussian intensity distribution. Aborting after, for example, five pixels within a column thus adequately covers the laser line.Other pixels within the respective column can advantageously be disregarded. Preferably choosing an even number of predetermined pixels increases the efficiency of subsequent data analysis, particularly the determination of a center of gravity (COG) within the respective column. In principle, two pixels may suffice for such an analysis, although adding two or four additional pixels can advantageously improve the accuracy of the COG determination.

[0040] In a further preferred embodiment of the method, the generation and storage of timestamps for pixels by the control unit can be permitted only for a predefined area within a column, in particular only for predefined rows within a column. In this way, the readout area of ​​the CMOS image sensor, similar to the multi-windowing in prior art image sensors, can advantageously be limited from the outset to smaller column sections that are of interest for evaluation, thereby advantageously suppressing stray light from reflections.

[0041] It is also advantageous if, in one process step, the brightness of the individual pixels of a column is determined

[0042] - first, the pixel with the smallest time stamp is determined and classified as the pixel with the greatest brightness;

[0043] - then the pixels adjacent to the pixel with the greatest brightness within a column are compared with each other and the pixel with the one in the comparison IP Ventures UG (limited liability) - 8 / 44 - December 10, 2025

[0044] D-82069 Schäftlarn S91154 WO HL / NU / ch to the smallest time marker, the next largest time marker, the next lower brightness, is assigned, and so on.

[0045] - until a brightness is assigned to all pixels, especially all pixels for which timestamps are stored in memory.

[0046] To determine the brightness of the individual pixels in a row, the following can be used:

[0047] - first, the pixel with the smallest time stamp is determined and classified as the pixel with the greatest brightness;

[0048] - then the pixels adjacent to the pixel with the greatest brightness within a row are compared with each other, and the pixel with the next largest time stamp compared to the smallest time stamp is assigned the next lowest brightness, and so on.

[0049] - until a brightness is assigned to all pixels, especially all pixels for which timestamps are stored in memory.

[0050] This approach advantageously determines the brightness of individual pixels based on previously stored timestamps or their sequence. It eliminates the need to detect the absolute number of photons hitting each pixel, thus avoiding pixel saturation. Optionally, the pixel classified as having the highest brightness—the "brightest pixel"—can be normalized to 100% brightness to reduce the complexity of the computational logic.

[0051] In a further preferred process step, the following can then be used to determine the distribution of the brightness of the individual pixels within a column:

[0052] - the respective brightness of each pixel marked with a time stamp is multiplied by the vertical position of the respective pixel;

[0053] - a sum of all products obtained in this way from brightness and vertical position is formed;

[0054] - the obtained sum is divided by the sum of all brightness values ​​of the pixels in the respective column that are marked with a time stamp;

[0055] - and thereby a subpixel-accurate vertical position of a center of brightness within the respective column can be determined.

[0056] Alternatively or cumulatively, IP Ventures UG (limited liability) - 9 / 44 - December 10, 2025

[0057] D-82069 Schäftlarn S91154 WO HL / NU / ch within one line:

[0058] - the respective brightness of each pixel marked with a time stamp is multiplied by the horizontal position of the respective pixel;

[0059] - a sum of all products obtained in this way from brightness and horizontal position is formed;

[0060] - the obtained sum is divided by the sum of all brightness levels within the respective row;

[0061] - and thereby a subpixel-accurate horizontal position of a center of brightness within the respective line can be determined.

[0062] Furthermore, in another preferred embodiment of the method, the path of a laser line across the regular arrangement of pixels in columns and rows of the CMOS image sensor can be determined by determining the vertical position of the centroid for several columns, preferably for each individual column. If the vertical position of the centroid is determined for several columns, the path of the laser line can advantageously be obtained by connecting said vertical positions. Determining the vertical position of the centroid for each individual column advantageously provides the greatest accuracy.

[0063] Finally, a specific embodiment of the method has proven effective in which the exposure of the respective pixel is interrupted upon reaching the threshold value, in particular by opening a photocurrent switch assigned to the respective pixel, wherein preferably an integrating capacitor assigned to the respective pixel is discharged by means of a reset circuit assigned to the respective pixel. Such a procedure advantageously reduces electrical crosstalk, i.e., unwanted mutual interference of neighboring pixels by electrical fields.

[0064] The control unit of the CMOS image sensor is configured according to the invention to execute the procedure described above.

[0065] In a preferred embodiment of the CMOS image sensor, each pixel comprises two or more comparators. IP Ventures UG (limited liability) - 10 / 44 - December 10, 2025

[0066] D-82069 Schäftlarn S91154 WO HL / NU / ch

[0067] In a particularly preferred embodiment of the CMOS image sensor, the CMOS image sensor can be designed as a BSI sensor (back-side illumination). CMOS image sensors designed as BSI sensors, i.e., as semiconductor image sensors with back-side illumination, advantageously exhibit higher light sensitivity and improved image quality.

[0068] In a particularly preferred embodiment of a CMOS image sensor according to the invention, the sensor comprises at least a regular arrangement of pixels in columns and rows; wherein each pixel includes a photodetector, a photocurrent switch, an integrating capacitor, a first reset circuit, and a first comparator. The CMOS image sensor according to the invention also comprises at least one control unit, wherein the control unit includes at least one first counter unit for processing a first clock signal and a start signal, and a second counter unit for processing a second clock signal and for generating time markers, wherein the second counter unit is operatively connected to the first reset circuit of the pixels, such that the second counter unit can be reset by the first reset circuit.Furthermore, the control unit comprises at least a first memory and a second reset circuit, wherein the second reset circuit is configured to interact with the first memory, the first reset circuit of the pixels, and the second counting unit. The control unit according to the invention also comprises a logic unit configured to interact with the first memory, the reset circuit of the pixels, and the second counting unit, as well as with the second reset circuit and the photocurrent circuits of the pixels. Finally, the control unit according to the invention is configured to specify at least a first threshold for a photon incidence.

[0069] A method preferred according to the invention for the particularly asynchronous operation of a CMOS image sensor preferred according to the invention comprises at least the following method steps:

[0070] (a) Resetting a pixel voltage of the photodetectors of all pixels to a defined initial value;

[0071] (b) Reset all timestamps to zero;

[0072] (c) Deletion of the first storage; IP Ventures UG (limited liability) - 11 / 44 - December 10, 2025

[0073] D-82069 Schäftlarn S91154 WO HL / NU / ch

[0074] (d) Starting the processing of the first clock signal by the first counting unit upon detection of the start signal;

[0075] (e) Starting the second clock signal at the start of an exposure of the CMOS image sensor by closing the photocurrent switches;

[0076] (f) Detecting each incident photon using the photodetector of the respective pixel;

[0077] (g) Comparing the actual value of the detected photon incidence of each pixel with the first threshold value for photon incidence specified by the control unit using the respective first comparator of the respective pixel;

[0078] (h) when the first threshold for a pixel is exceeded, the second counting unit generates a timestamp for that pixel;

[0079] (i) Storing the timestamp for this pixel in the first memory;

[0080] (j) Reading the first memory; and

[0081] (k) Determining the brightness of individual pixels based on the timestamps stored in the first memory.

[0082] The preferred method according to the invention advantageously processes only pixel information (time stamp and, if applicable, frame number) from pixels whose exposure has reached a predefined first threshold. Unexposed pixels are disregarded. Since only relevant pixels are read out, the method according to the invention is characterized by very high efficiency and a very high frame rate or scan rate, and thus high speed. In comparison to efficiency-enhancing methods such as prior art windowing, which also do not read out and process all pixels of an image sensor, the method according to the invention can advantageously utilize the entire image area of ​​the CMOS image sensor. Selection of the readout area by windowing, and thus the corresponding configuration effort, is eliminated.

[0083] Furthermore, the preferred method according to the invention advantageously determines the brightness of the individual pixels solely on the basis of the timestamps stored in memory. The preferred method according to the invention advantageously exploits the fact that the brightness of a pixel is inversely proportional to its assigned timestamp: the higher the photon incidence on a particular pixel, the faster a predetermined first threshold is exceeded, and the smaller the counter value. (IP Ventures UG (limited liability) - 12 / 44 - December 10, 2025)

[0084] D-82069 Schäftlarn S91154 WO HL / NU / ch According to the inventive method, the second counting unit assigns a time marker to the respective pixel. The individual pixel signals, in particular the pixel voltages stored in integrating capacitors, are used only for comparison with the aforementioned first threshold and are not processed further. The first threshold can be selected significantly below the saturation value of the pixels, thus advantageously avoiding overexposure of the pixels and therefore of the image sensor. Furthermore, it is advantageously not necessary to wait for a further clock signal or the end of the exposure of the entire image sensor to evaluate or process pixel data. The moment a time marker is assigned to a pixel, this value is available for further processing. CMOS image sensors operated with the method preferred according to the invention therefore advantageously exhibit very short latency times.

[0085] The preferred method according to the invention advantageously improves the data transmission from the pixel field of the CMOS image sensor by considering only relevant pixels. Since the power consumption of an image sensor is proportional to the data throughput, less data advantageously leads to lower power consumption and thus to particularly energy-efficient operation.

[0086] Further advantageous designs and advanced trainings, which can be used individually or in combination, are the subject of further dependent claims.

[0087] In a preferred embodiment of the preferred method according to the invention, it has proven advantageous if the first memory is at least a columnar memory, in particular a columnar memory operated according to the FIFO ("first in, first out") principle, and the timestamp generated for a specific pixel is stored in the columnar memory together with a vertical position of the pixel, in particular with the respective row number of the CMOS image sensor of the respective pixel. With this storage variant, the horizontal position, in particular the column coordinate, of the pixel advantageously does not need to be stored, which saves storage space and speeds up the storage process. In an embodiment of the invention in which, for example, two columnar memories are provided as the first memory, these can advantageously be operated alternately.For example, one of the two column memories can be written to while the other is being read, thus advantageously increasing the sampling rate of the CMOS image sensor. IP Ventures UG (limited liability) - 13 / 44 - December 10, 2025.

[0088] D-82069 Schäftlarn S91154 WO HL / NU / ch. Alternatively or cumulatively, the first memory can also be at least a row memory, in particular a row memory operated according to the FIFO ("first in - first out") principle, and the timestamp generated for a specific pixel, together with a horizontal position of the pixel, in particular with the respective number of the column of the CMOS image sensor of the respective pixel, can be stored in the row memory.

[0089] Alternatively, an embodiment of the method preferred according to the invention has proven successful in which the first memory is at least a global memory, in particular a global memory operated according to the FIFO ("first in, first out") principle, and in which the timestamp generated for a specific pixel is stored in the global memory together with the horizontal and vertical position of the respective pixel on the CMOS image sensor, in particular together with the respective column and row number of the CMOS image sensor of the respective pixel. Before reading the first memory, the stored value triples comprising the timestamp and the associated horizontal and vertical position of the respective pixel can be sorted by column or row. After the end of the image generation or...With this storage method, all data records are advantageously pre-sorted by columns or rows before further processing during the scanning process.

[0090] In a further preferred embodiment of the method preferred according to the invention, it has proven advantageous if the control unit specifies two or more threshold values, i.e., for example, a second and a third threshold value in addition to the first, and each pixel correspondingly comprises two or more comparators, i.e., for example, a second and a third comparator in addition to the first, in particular one comparator for each threshold value specified by the control unit. The ability to specify at least one first threshold value by means of the control unit advantageously allows, among other things, adjustment to the laser intensity, exposure time, and the properties of the object surface to be examined (reflectivity).If each pixel contains two or more comparators, the stored pixel voltage can be advantageously compared with two or more threshold values ​​specified by the control unit, thereby generating and assigning a time marker earlier, particularly for darker pixels. Such a design also allows for a higher threshold value, especially for the brightness maximum, and for IP Ventures UG (limited liability) - 14 / 44 - December 10, 2025.

[0091] D-82069 Schäftlarn S91154 WO HL / NU / ch

[0092] Lower threshold values ​​can be provided for secondary parameters, which advantageously reduces motion blur and improves the simultaneity of brightness detection. Furthermore, such a design with two or more threshold values ​​specified by the control unit and correspondingly two or more comparators per pixel advantageously enables measurement of the laser intensity gradient, which, among other things, advantageously allows compensation for the pressure level of the CMOS image sensor.

[0093] Furthermore, it is advantageous if the generation and storage of timestamps for pixels within a column is aborted after a predetermined number of pixels, particularly after 2, 3, 4, 5, 6, or more pixels, wherein the predetermined number of pixels is particularly preferably even, especially 2, 4, or 6 pixels. Aborting the generation and storage of timestamps for pixels within a column after a predetermined number of pixels advantageously increases the evaluation speed of the CMOS image sensor and saves memory space. In addition, power consumption is advantageously reduced. This is particularly beneficial when using the CMOS image sensors according to the invention in laser triangulation for measuring 3D objects (machine parts, etc.).In 3D object acquisition, this approach can be advantageously used to increase efficiency, since the laser line focused on the object under investigation typically covers only a small number of pixels—usually three—within a column and exhibits a Gaussian intensity distribution. Terminating the laser line after, for example, five pixels within a column is therefore sufficient. Other pixels within the respective column can be advantageously disregarded. If the number of predetermined pixels is preferably chosen to be even, the efficiency of the subsequent data analysis is advantageously increased, particularly the determination of a center of gravity (COG) within the respective column. In principle, two pixels can suffice for such an analysis, although the addition of two or four secondary pixels can advantageously increase the accuracy of the COG determination.

[0094] In a further preferred embodiment of the method preferred according to the invention, the generation and storage of timestamps for pixels by the control unit can be permitted only for a previously defined area within a column, in particular only for previously defined rows within a column. In this way, the readout area of ​​the CMOS image sensor can be limited, similar to multi-windowing in image sensors. IP Ventures UG (limited liability) - 15 / 44 - December 10, 2025

[0095] D-82069 Schäftlarn S91154 WO HL / NU / ch of the prior art, advantageously limited from the outset to smaller column sections that are of interest for the evaluation, thereby advantageously eliminating stray lights from reflections.

[0096] Furthermore, an embodiment of the method preferred according to the invention is advantageous in which the exposure of the respective pixel is interrupted upon reaching the first threshold value, in particular by opening the photocurrent switch assigned to the respective pixel, wherein preferably the integrating capacitor assigned to the respective pixel is discharged by means of the reset circuit assigned to the respective pixel. Such a procedure advantageously reduces electrical crosstalk, i.e., an undesirable mutual influence of neighboring pixels by electrical fields.

[0097] It is also advantageous if, in one process step, the brightness of the individual pixels of a column is determined

[0098] - first, the pixel with the smallest time stamp is determined and classified as the pixel with the greatest brightness;

[0099] - then the pixels adjacent to the pixel with the greatest brightness within a column are compared with each other, and the pixel with the next largest time stamp compared to the smallest time stamp is assigned the next lowest brightness, and so on.

[0100] - until a brightness is assigned to all pixels, especially all pixels for which timestamps are stored in the first memory.

[0101] To determine the brightness of the individual pixels in a row, the following can be used:

[0102] - first, the pixel with the smallest time stamp is determined and classified as the pixel with the greatest brightness;

[0103] - then the pixels adjacent to the pixel with the greatest brightness within a row are compared with each other, and the pixel with the next largest time stamp compared to the smallest time stamp is assigned the next lowest brightness, and so on.

[0104] - until a brightness is assigned to all pixels, especially all pixels for which timestamps are stored in the first memory.

[0105] The brightness of individual pixels is advantageously determined using this method based on previously stored timestamps or their sequence. Detection by IP Ventures UG (limited liability) - 16 / 44 - December 10, 2025

[0106] D-82069 Schäftlarn S91154 WO HL / NU / ch The absolute number of photons applied to each pixel can be omitted, which advantageously avoids saturation of the individual pixels. Optionally, the pixel classified as having the highest brightness – i.e., the “brightest pixel” – can also be normalized to 100% brightness to advantageously reduce the complexity of the computational logic.

[0107] In a further preferred process step, the following can then be used to determine the distribution of the brightness of the individual pixels within a column:

[0108] - the respective brightness of each pixel marked with a time stamp is multiplied by the vertical position of the respective pixel;

[0109] - a sum of all products obtained in this way from brightness and vertical position is formed;

[0110] - the obtained sum is divided by the sum of all brightness values ​​of the pixels in the respective column that are marked with a time stamp;

[0111] - and thereby a subpixel-accurate vertical position of a center of brightness within the respective column can be determined.

[0112] Alternatively or cumulatively, within one line:

[0113] - the respective brightness of each pixel marked with a time stamp is multiplied by the horizontal position of the respective pixel;

[0114] - a sum of all products obtained in this way from brightness and horizontal position is formed;

[0115] - the obtained sum is divided by the sum of all brightness levels within the respective row;

[0116] - and thereby a subpixel-accurate horizontal position of a center of brightness within the respective line can be determined.

[0117] Furthermore, in a further preferred embodiment of the preferred method according to the invention, the path of a laser line across the regular arrangement of pixels in columns and rows of the CMOS image sensor can be determined by determining the vertical position of the centroid of brightness for several columns, preferably for each individual column. If the vertical position of the centroid of brightness is determined for several columns, the path of the laser line can advantageously be determined by an IP Ventures UG (limited liability) - 17 / 44 - December 10, 2025

[0118] D-82069 Schäftlarn S91154 WO HL / NU / ch

[0119] The connection between these vertical positions can be obtained. Determining the vertical position of the center of brightness for each individual column advantageously allows for the greatest accuracy.

[0120] In a further preferred embodiment of the method preferred according to the invention, the logic unit can control the following process steps at the beginning of each new clock pulse of the first clock signal, in particular by means of the second reset circuit:

[0121] (l) Resetting the pixel voltage of the photodetectors of all pixels to the defined initial value;

[0122] (m) Reset all timestamps to zero;

[0123] (n) Erase the first memory;

[0124] (o) Starting the second clock signal and simultaneously closing the photocurrent switches of all pixels;

[0125] Subsequently, in this configuration of the procedure, at least the procedural steps (f) to (k) can be carried out.

[0126] The described process steps advantageously enable the operation of the CMOS image sensor in a global process mode, in which all pixels are synchronously reset after the expiry of one clock cycle of the first clock signal and then re-exposed and evaluated.

[0127] Alternatively, in a particularly preferred embodiment of the preferred method according to the invention, the logic unit can, after the procedure steps (a) to (e) have been executed once, control the following procedure steps for each individual column independently of the other columns:

[0128] (p) Performing the procedure steps (f) to (k) for the pixels of the respective column;

[0129] (q) Resetting the pixel voltage of the photodetectors of the pixels of the respective column to the defined initial value by means of the first reset circuit of the pixels of that column;

[0130] (r) Resetting the timestamps of the pixels of the respective column to zero using the first reset circuit of the second counting unit;

[0131] (s) Delete all entries for the pixels of the respective column in the first memory;

[0132] (t) Starting the second clock signal for the respective column and simultaneously closing the photocurrent switches of all pixels in the respective column; IP Ventures UG (limited liability) - 18 / 44 - December 10, 2025

[0133] D-82069 Schäftlarn S91154 WO HL / NU / ch wherein the process steps (p) to (t) can be repeated, preferably until a termination criterion is reached. The termination criterion can be, in particular, the completion of the image acquisition sequence or the scanning process as a whole and / or the detection of a new start signal by the first counting unit.

[0134] It is advantageous if the results of the brightness determination according to procedure (k) for the individual columns are synchronized using the first clock signal.

[0135] Such a method advantageously allows the CMOS image sensor to be operated in an asynchronous column-based mode, which enables particularly fast scanning. After, for example, the brightness of the individual pixels within a column, and especially the subpixel-accurate vertical position of the brightness center within the column, has been determined according to the inventive method, the charge storage devices, i.e., in particular the integrating capacitors, of the pixels in this column can be erased and immediately, preferably still within the current clock cycle of the first clock signal, i.e., within the frame clock specified by the frame counter, re-exposed and evaluated.

[0136] The second clock signal, which is processed by the second counting unit and used to generate the timestamps for the individual pixels, can preferably be chosen to be orders of magnitude faster than the first clock signal, which is processed by the first counting unit and serves as the frame clock or frame counter. The second clock signal can, for example, be in the range of 100–300 MHz, while the first clock signal typically ranges from 1 kHz (corresponding to 1,000 frames / s) to approximately 100 kHz (corresponding to 100,000 frames / s), and in particularly fast image sensor systems, even up to 1 MHz (corresponding to 1,000,000 frames / s). The second clock signal thus advantageously represents a high-resolution clock and serves, so to speak, to digitize the respective pixel intensity within a frame clock.

[0137] Resetting all data of the pixels in the respective column and restarting the exposure of the column in question, in particular resetting the respective integration capacitors and the corresponding timestamps in the first memory, as well as opening and IP Ventures UG (limited liability) - 19 / 44 - December 10, 2025

[0138] D-82069 Schäftlarn S91154 WO HL / NU / ch

[0139] The closing of the respective photoelectric switches can be achieved, in particular, by the logic unit via the first reset circuit(s), which are operatively connected to and preferably interact with each other, and which are linked to the individual pixels of the respective column as well as to the second counting unit. A criterion for the logic unit, determining when an exposure phase ends and an evaluation begins for said column, can advantageously be derived from the data determined for the respective column. For example, the pixel data of a column can be reset by the first reset circuit when a defined number of contiguous pixels in the column have reached the first threshold value, thus enabling, in particular, the determination of the subpixel-accurate vertical position of the center of brightness within this column.Advantageously, such a criterion depends only on the data of the respective column itself, so that the individual columns of the CMOS image sensor can be operated independently of one another, and in particular, exposed and evaluated asynchronously. This advantageously allows a large number of independent data acquisitions to take place during a single frame clock cycle, i.e., during one clock cycle of the first clock signal.

[0140] Since the first clock signal, known as the frame clock, continues to run continuously during an image capture sequence, data collected in this way, in particular the subpixel-accurate vertical positions of the centroid of brightness within a column determined in this way, can then preferably be synchronized using the first clock signal.

[0141] The CMOS image sensor according to the invention is particularly well suited for use in object measurement and / or object inspection methods where only a portion of the pixels of a CMOS image sensor are exposed. Such methods include, for example, those in which a line of light with a Gaussian intensity profile is projected onto the CMOS image sensor, such as laser triangulation; or those in which a single light point or several individual light points are projected onto the CMOS image sensor, as in so-called "flying spot applications" or diffractometry methods.

[0142] Additional details and further advantages of the invention are described below with reference to preferred embodiments, to which the present invention is not limited, and in conjunction with the accompanying drawing. IP Ventures UG (limited liability) - 20 / 44 - December 10, 2025

[0143] D-82069 Schäftlarn S91154 WO HL / NU / ch

[0144] This schematically illustrates:

[0145] Fig. 1 shows an example of a general structure of a CMOS image sensor;

[0146] Fig. 2 shows an embodiment of a CMOS image sensor according to the invention with two pixels in the form of a block diagram;

[0147] Fig. 3 shows, by way of example, the course of a laser line over a section of the image area of ​​a CMOS image sensor according to the invention, as well as, in an enlarged view, a section of the first column and the associated intensity profile of the laser line in said section;

[0148] Fig. 4 shows a further embodiment of a CMOS image sensor with two pixels, preferred according to the invention, in particular for asynchronous operation, in the form of a block diagram; and

[0149] Fig. 5 shows two exemplary pulse diagrams to visualize two embodiments of the method preferred according to the invention: the upper pulse diagram a) shows a global process mode, the lower pulse diagram b) shows a column-based process mode.

[0150] In the following description of preferred embodiments of the present invention, the same reference numerals denote identical or comparable components.

[0151] Fig. 1 shows an example of a general structure of a CMOS image sensor 1.

[0152] CMOS image sensors in general, as well as the CMOS image sensor 1 according to the invention, comprise at least a regular arrangement of pixels 2 in columns Si, S2, ... , S x and lines Zi, Z2, . . . , Z x, which form their image area, and a control unit 3 for controlling and evaluating the image data. Data exchange between control unit 3 and the individual pixels 2 can take place directly and / or indirectly, in particular via a row access circuit 11 and / or a column access circuit 12. IP Ventures UG (limited liability) - 21 / 44 - December 10, 2025

[0153] D-82069 Schäftlarn S91154 WO HL / NU / ch

[0154] Fig. 2 shows an embodiment of a CMOS image sensor 1 according to the invention with two pixels 2 as an example, in the form of a block diagram.

[0155] According to the invention, each pixel 2 comprises at least one photodetector 21 for detecting an incident photon and at least one comparator 25. The control unit 3 according to the invention comprises a counting unit 31 for processing a clock signal 32 and for generating time markers ti, as well as at least one memory 33. This memory 33 can preferably be operated according to the FIFO (first in, first out) principle. Furthermore, the control unit 3 is configured to specify at least one threshold value T for the incident photon.

[0156] According to the invention, such a CMOS image sensor 1 is now operated as follows:

[0157] Before a new scan or measurement is started with the CMOS image sensor 1, the pixel voltages of the photodetectors 21 of all pixels 2 are first set to a defined initial value, in particular to zero, as are any stored time stamps ti. In addition, the memory 33 is cleared. This can preferably be done via reset circuits R of the pixels 2, the counter unit 31, and the memory 33.

[0158] When the CMOS image sensor 1 is exposed, in particular by one or more, especially two or three, laser lines L during a laser triangulation measurement, the clock signal 32, generated, for example, by a reference clock generator, is started simultaneously. When light (photons) falls on the photodetector 21 of a pixel 2, the photocurrent 22 generated in the photodetector 21 can flow via a closed photocurrent switch 23 to an integrating capacitor 24, where it is stored as a pixel voltage, thus detecting the photon incidence on the respective pixel 2. The comparator 25 of the respective pixel 2 compares the actual value of the detected photon incidence with the threshold value T for photon incidence specified by the control unit 3, whereby the control unit 3 can transmit said threshold value T to the comparators 25 of the individual pixels 2 in the form of a comparison voltage.If the actual value of the photon incidence of a pixel 2, i.e., in particular its pixel voltage, exceeds the threshold value T, i.e., in particular the value of the specified reference voltage, a timestamp ti is generated for this pixel 2 by the counting unit 31. IP Ventures UG (limited liability) - 22 / 44 - December 10, 2025.

[0159] D-82069 Schäftlarn S91154 WO HL / NU / ch and stored in memory 33. The counter unit 31 preferably functions as a global counter, which processes the clock signal 32 such that whenever the threshold value T is exceeded for a pixel 2, a copy of the counter value of the counter unit 31 at the time of the exceedance is stored as a timestamp ti for this pixel 2 in memory 33. If the pixels 2 comprise two or more comparators 25, the control unit 3 can accordingly specify two or more threshold values ​​T, so that darker pixels 2 can advantageously be detected earlier.

[0160] The timestamp ti generated for a specific pixel 2 can be stored in a memory 33 designed as a columnar memory together with the vertical position i. v of pixel 2, in particular with the respective row number Zi, Z2, . . . , Z x of the CMOS image sensor 1 of the respective pixel 2, and / or in a memory 33 configured as a row memory together with the horizontal position ih of the pixel 2, in particular with the respective number of the column Si, S2, ... , S x of the CMOS image sensor 1 of the respective pixel 2. The time marker ti can also be stored together with the horizontal ih and the vertical i. v Position of the respective pixel 2 on the CMOS image sensor 1, in particular together with the respective number of column Si, S2, . . . , S x and the respective line number Zi, Z2, ..., Z xThe CMOS image sensor 1 of the respective pixel 2 is stored in a memory 33 designed as a global memory. This storage variant is advantageous, for example, for the detection of point-like events, especially in the context of flying spot applications.

[0161] In the case of a memory 33 designed as a global memory, the stored value triples comprising time stamp ti and associated vertical i can preferably be read out even before the memory 33 is read. v and horizontal position of the respective pixel 2 according to columns Si, S2, . . . , S x or lines Zi, Z2, . . . , Z x to be sorted.

[0162] To further increase read efficiency and speed, timestamps ti can be generated and stored for pixel 2 within a column Si, S2, ... , S xThe process can be aborted after a predetermined number of pixels 2, in particular after 2, 3, 4, 5, 6, or more pixels 2, wherein the predetermined number of pixels 2 is preferably even, in particular 2, 4, or 6 pixels 2. Alternatively or cumulatively, the generation and storage of timestamps ti for pixels 2 by the control unit 3 can also be limited to a previously defined range within a column Si, S2, . . . , S x , especially for IP Ventures UG (limited liability) - 23 / 44 - December 10, 2025

[0163] D-82069 Schäftlarn S91154 WO HL / NU / ch previously defined lines Zi, Z2, Z x within a column Si, S2, S x , be admitted.

[0164] After reading the memory 33, preferably by means of a data readout unit 34, the brightness Hi is then determined according to the invention. v; The brightness of each individual pixel 2 is determined based on the timestamps ti stored in memory 33. To determine the brightness Hiv; i of the individual pixel 2 of a column Si, S2, . . . , S x First, especially within a computing unit 35, pixel 2 with the smallest time stamp tmin can be determined and designated as pixel 2 with the greatest brightness Hma. X They can be classified. Then, those with the highest brightness (Hma) of the Pixel 2 can be identified. X adjacent pixel 2 within a column Si, S2, ..., S x Each is compared with each other, and the next lower brightness Hmax-i is assigned to Pixel 2 with the next larger time marker compared to the smallest time marker tmin. net become and so forth. This assignment of relative brightness values ​​H max, Hmax-1, Hmax-2, ... preferably continues until a brightness Hi is assigned to all pixels 2, in particular to all pixels 2 for which 33 time markers ti are stored in memory. To determine the brightness Hi v; ih of the individual pixel 2 of a row Zi, Z2, . . . , Z xAccordingly, pixel 2 with the smallest time stamp tmin can first be determined, especially within a computing unit 35, and designated as pixel 2 with the greatest brightness H. ma x can be classified. Then, those corresponding to pixel 2 with the highest brightness H can be used. ma x adjacent pixels 2 within a row Zi, Z2, ... , Z x Each time marker is compared with the next highest time marker tmin+i, and the next lowest brightness Hmax-i is assigned to pixel 2, which has the next highest time marker tmin+i, and so on. This assignment of relative brightness values ​​H max , Hmax-i, H ma x-2, ...preferably continues until a brightness Hi is assigned to all pixels 2, in particular to all pixels 2 for which 33 time stamps ti are stored in memory. The method according to the invention advantageously takes advantage of the fact that the brightness Hi v;ih is inversely proportional to the time marker ti. Optionally, the brightness Hi can be set. v; They will also be standardized.

[0165] To determine a distribution of the brightness Hiv;ih of the individual pixels 2, Si, S2, . . . , S can be used within a column. x In a further process step, the respective brightness Hiv;ih of each pixel 2 provided with a time stamp ti, preferably again by the computing unit 35, with a vertical position i v of the respective pixel 2 multiplied and a sum E, v i v * Hi v; all products thus obtained from brightness Hiv;ih and vertical position i v be formed. The vertical position i v This can be done in particular in the form of IP Ventures UG (limited liability) - 24 / 44 - December 10, 2025

[0166] D-82069 Schäftlarn S91154 WO HL / NU / ch

[0167] Line number Zi, Z2, Z x The sum received, E,v i v * H^iii can then be expressed by a sum E, v HIV of all brightness Hi v; ih the pixel 2 of the respective column Si, S2, S, which is marked with a timestamp ti x to be divided, thereby achieving a subpixel-accurate vertical position COG V a focus of brightness Hi v; within the respective column Si, S2, . . . , S x can be determined. Alternatively or cumulatively, within a single line, Z1, Z2, ..., Z1 can be entered. x the respective brightness Hi v; Each pixel 2, marked with a time stamp ti, is multiplied by the horizontal position ih of the respective pixel 2. The sum E,h ih * H^h of all such products of brightness Hi is then calculated. v; ih and horizontal position ih can then be formed and the obtained sum E,h ih * Hi v; ih through the sum Eih Hi v; in all brightness Hi v; within the respective line Zi, Z2, . . . , Zx can be divided. This allows for the advantageous determination of a subpixel-accurate horizontal position COGh of a brightness center Hi. v; within the respective line Zi, Z2, . . . , Z x can be determined. Particularly in flying spot applications, the position of the center of brightness can be advantageously determined in this way. v; i in both dimensions, i.e., both the vertical position COG V The horizontal position COGh can also be determined with subpixel precision. Furthermore, a calculation in 3D coordinates can be performed based on each of these variants.

[0168] Fig. 3 shows, by way of example, the path of a laser line L across a section of the image area of ​​a CMOS image sensor 1 according to the invention, as well as, in an enlarged view, a section of the first column Si and the associated intensity profile Int of the laser line L in said section. In the example shown here, the laser line L within the first column Si covers only pixels 2 in rows Z7 to Z12, with the intensity profile Int being Gaussian, with a maximum in the region of pixels 2 in rows Z9 and Z10. Thus, the photon incidence on pixels 2 in rows Z9 and Z10 of the first column Si is also greatest and decreases towards both smaller (< Zs) and larger (> Zn) row numbers. In the example shown, pixels 2 at positions i = (Si; Z9) and (Si; Z10) would therefore be the first to reach a predefined, for example, first, threshold value T and, according to the invention, would be assigned the smallest time markers ti.Depending on when the first threshold value T is reached, the other pixels 2 would follow. Pixels 2 in rows Zi to Ze and > Z13 would be unexposed in the example shown and are advantageously disregarded within the scope of the inventive procedure in order to optimize the efficiency of the readout and data processing process. IP Ventures UG (limited liability) - 25 / 44 - December 10, 2025.

[0169] D-82069 Schäftlarn S91154 WO HL / NU / ch

[0170] Finally, to define the path of a laser line L across the regular arrangement of pixels 2 in columns Si, S2, ... , S x and lines Zi, Z2, . . . , Z x To determine the vertical position COG of the CMOS image sensor 1 V of the center of brightness Hjv;ih for several columns Si, S2, S x , preferably for each individual column Si, S2, S x, as previously described. A combination of the various vertical positions COGy then advantageously yields the path of the laser line L in the image area of ​​the CMOS image sensor 1.

[0171] Fig. 4 shows a further embodiment of a CMOS image sensor with two pixels, preferably operated asynchronously according to the invention, in the form of a block diagram.

[0172] According to the invention, the pixels 2 preferably each comprise a photodetector 21 for detecting an incident photon, a photocurrent switch 23, an integrating capacitor 24 as a charge storage device, a first reset circuit Rs and a first comparator 25.

[0173] The preferred control unit 3 according to the invention comprises at least one first counting unit 37 for processing a first clock signal 36 and a start signal S, a second counting unit 31 for processing a second clock signal 32 and for generating time markers ti, and a first memory 33. The second counting unit 31 is operatively connected to the first reset circuit Rs, such that the second counting unit 31 can be reset by the first reset circuit Rs. The first memory 33 can preferably be operated according to the FIFO (first in, first out) principle. The control unit 3 also includes a second reset circuit Rg, wherein the second reset circuit Rg is configured to interact with the first memory 33 and with the first reset circuit Rs of the pixel 2 and the second counting unit 31.Furthermore, the control unit 3 preferred according to the invention comprises a logic unit 38, which is configured to interact with the first memory 33, the first reset circuit Rs of the pixel 2 and the second counting unit 31, as well as with the second reset circuit Rg and the photocurrent switches 23 of the pixel 2.

[0174] Furthermore, control unit 3 is configured to specify at least a first threshold value T for the photon incidence. IP Ventures UG (limited liability) - 26 / 44 - December 10, 2025

[0175] D-82069 Schäftlarn S91154 WO HL / NU / ch

[0176] According to the invention, such a CMOS image sensor 1 is preferably operated as follows:

[0177] Before a new scan or measurement is started with the CMOS image sensor 1, the pixel voltages of the photodetectors 21 of all pixels 2 are first set to a defined initial value, specifically zero, as are any stored time stamps ti. In addition, the first memory 33 is cleared. This is done, controlled by the logic unit 38, via a first reset circuit Rs of the pixels 2 and the second counter 31 and / or via a second reset circuit Rg of the memory 33.

[0178] At the start of a new scan or measurement with the CMOS image sensor 1, the first counting unit 37 of the control unit 3 receives a start signal S. This signal can be generated internally or externally, for example, when a CMOS image sensor 1 mounted on a linear axis reaches a trigger point on the linear axis during its movement towards the object being examined, thereby triggering the start signal S. Upon receiving the start signal S, the first counting unit 37 is reset and begins processing a first clock signal 36, preferably from an external source. This first clock signal 36 serves as the frame clock for the measurement process.

[0179] When the exposure of the CMOS image sensor 1 is started by closing the photocurrent switches

[0180] When pixel 2 is illuminated, in particular by one or more, especially two or three, laser lines L within the framework of a laser triangulation measurement, the second clock signal 32, generated, for example, by a reference clock generator, is simultaneously started. If light (photons) falls on the photodetector 21 of a pixel 2, the photocurrent 22 generated in the photodetector 21 can flow to the integrating capacitor via the closed photocurrent switch 23.

[0181] The photons flow to the first comparator 25 of each pixel 2, where they are stored as a pixel voltage, thus detecting the photon incidence on that pixel. The first comparator 25 of each pixel 2 compares the actual value of the detected photon incidence with the first threshold T for photon incidence specified by the control unit 3. The control unit 3 can then transmit this first threshold T as a comparison voltage to the first comparators 25 of each pixel 2. IP Ventures UG (limited liability) - 27 / 44 - December 10, 2025

[0182] D-82069 Schäftlarn S91154 WO HL / NU / ch When the actual value of the photon incidence of a pixel 2, i.e., in particular its pixel voltage, exceeds the first threshold value T, i.e., in particular the value of the specified reference voltage, a time marker ti for this pixel 2 is generated by the second counting unit 31 and stored in the first memory 33. The second counting unit 31 can preferably function as a global counter, which processes the second clock signal 32 such that whenever the first threshold value T is exceeded for a pixel 2, a copy of the counter value of the counting unit 31 at the time of the exceedance is stored as a time marker ti for this pixel 2 in the first memory 33. If the pixels 2 comprise two or more comparators 25, the control unit 3 can accordingly specify two or more threshold values ​​T, so that darker pixels 2 can advantageously be detected earlier.

[0183] The timestamp ti generated for a specific pixel 2 can be stored in a first memory 33 designed as a columnar memory together with the vertical position i. v of pixel 2, in particular with the respective row number Zi, Z2, . . . , Z x of the CMOS image sensor 1 of the respective pixel 2, and / or in a first memory 33 designed as a row memory together with the horizontal position ih of the pixel 2, in particular with the respective number of the column Si, S2, ... , S x of the CMOS image sensor 1 of the respective pixel 2. The time marker ti can also be stored together with the horizontal ih and the vertical i. v Position of the respective pixel 2 on the CMOS image sensor 1, in particular together with the respective number of column Si, S2, . . . , S x and the respective line number Zi, Z2, ..., Z xThe data from the CMOS image sensor 1 of the respective pixel 2 are stored in a first memory 33 designed as a global memory. This storage variant is advantageous, for example, for the detection of point-like events, especially in the context of flying spot applications.

[0184] In the case of a first memory 33 designed as a global memory, the stored value triples comprising time stamp ti and associated vertical i can preferably be read out even before the first memory 33 is read. v and horizontal position of the respective pixel 2 according to columns Si, S2, . . . , S x or lines Zi, Z2, . . . , Z x to be sorted.

[0185] To further increase read efficiency and speed, timestamps ti can be generated and stored for pixel 2 within a column Si, S2, ... , S xafter a predetermined number of pixels 2, in particular after 2, 3, 4, 5, 6, or more pixels 2, IP Ventures UG (limited liability) - 28 / 44 - December 10, 2025

[0186] D-82069 Schäftlarn S91154 WO HL / NU / ch can be aborted, wherein the predetermined number of pixels 2 is preferably even, in particular 2, 4 or 6 pixels 2. Alternatively or cumulatively, the generation and storage of timestamps ti for pixels 2 by the control unit 3 can also be performed only for a previously defined range within a column Si, S2, . . . , S x , especially only for previously defined lines Zi, Z2, ..., Z x within a column Si, S2, ... , S x , be admitted.

[0187] After reading the first memory 33, preferably by means of a data readout unit 34, the brightness Hi is then preferably determined according to the invention. v;The brightness of each individual pixel (2) is determined based on the timestamps (ti) stored in the first memory (33). To determine the brightness (Hi). v; i of the individual pixel 2 of a column Si, S2, ..., S x First, especially within a computing unit 35, pixel 2 with the smallest time stamp tmin can be determined and designated as pixel 2 with the greatest brightness H. max They can be classified. Then, those corresponding to Pixel 2 with the highest brightness H can be identified. max adjacent pixel 2 within a column Si, S2, . . . , S x Each of these values ​​is compared with each other, and the pixel 2 with the next highest time marker tmin+i (compared to the lowest time marker tmin) is assigned the next lowest brightness Hmäx-i, and so on. This assignment of relative brightness values ​​Hm ax, Hmax-1, Hnrax-2, ... preferably continues until a brightness Hi is assigned to all pixels 2, in particular to all pixels 2 for which 33 time stamps ti are stored in the first memory. To determine the brightness Hi v; ih of the individual pixel 2 of a row Zi, Z2, . . . , Z x Accordingly, pixel 2 with the smallest time stamp tmin can first be determined, especially within a computing unit 35, and designated as pixel 2 with the greatest brightness H. max They can be classified. Then, those corresponding to Pixel 2 with the highest brightness H can be identified. max adjacent pixel 2 within a row Zi, Z2, ... , Z x Each is compared with the others, and the pixel 2 with the next largest time marker tmin+i compared to the smallest time marker tmin is assigned the next lowest brightness H. max -i, are assigned, and so on. This assignment of relative brightness values ​​H max , H max -i, H max-2, ...preferably continues until a brightness Hi is assigned to all pixels 2, in particular to all pixels 2 for which 33 time stamps ti are stored in the first memory. The preferred method according to the invention advantageously takes advantage of the fact that the brightness Hi V ;ih is inversely proportional to the time marker ti. Optionally, the brightness Hi can be set. v; They will also be standardized. IP Ventures UG (limited liability) - 29 / 44 - December 10, 2025

[0188] D-82069 Schäftlarn S91154 WO HL / NU / ch

[0189] To determine a distribution of brightness Hi v; In the case of individual pixel 2, within a column Si, S2, . . . , S x in a further process step, the respective brightness Hi v; each pixel 2 provided with a time stamp ti, preferably again by the computing unit 35, with a vertical position i vof the respective pixel 2 multiplied and a sum E, v i v * Hi v; all products obtained in this way from brightness Hi v; ih and vertical position i v be formed. The vertical position i v This can be done in particular in the form of the line number Zi, Z2, ..., Z x The sum received, E, v i v * Hi v; I can then, by a sum E, v Hi v; in all brightness Hi v; ih the pixel 2 of the respective column Si, S2, ... , S which is marked with a timestamp ti x to be divided, thereby achieving a subpixel-accurate vertical position COG V a focus of brightness Hi v; within the respective column Si, S2, . . . , S x can be determined. Alternatively or cumulatively, within a single line, Z1, Z2, ..., Z1 can be entered. x the respective brightness Hi v;Each pixel 2, marked with a time stamp ti, is multiplied by the horizontal position ih of the respective pixel 2. The sum E,h ih * H^ih of all such products of brightness Hi is then calculated. v; ih and horizontal position ih can then be formed and the obtained sum E,h ih * Hi v; ih through the sum Eih Hi v; in all brightness Hi v; within the respective line Zi, Z2, . . . , Z x can be divided. This allows for the advantageous determination of a subpixel-accurate horizontal position COGh of a brightness center Hi. v; within the respective line Zi, Z2, . . . , Z x can be determined. Particularly in flying spot applications, the position of the center of brightness can be advantageously determined in this way. v; i in both dimensions, i.e., both the vertical position COG VThe horizontal position COGh can also be determined with subpixel precision. Furthermore, a calculation in 3D coordinates can be performed based on each of these variants.

[0190] Fig. 5 shows two exemplary pulse diagrams to visualize two embodiments of the preferred method according to the invention: the upper pulse diagram a) shows a global method mode, the lower pulse diagram b) shows a column-based method mode.

[0191] The CMOS image sensor 1, which is preferred according to the invention, can be operated in two different modes, a so-called global processing mode (Fig. 5a) and a so-called column-based processing mode (Fig. 5b). The mode used can preferably be controlled by the logic unit 38. Figures 5a and 5b show examples. IP Ventures UG (limited liability) - 30 / 44 - December 10, 2025

[0192] D-82069 Schäftlarn S91154 WO HL / NU / ch larisch each two bars of the first clock signal 36, i.e. the frame clock, are shown, whereby the end of the first bar of the first clock signal 36 is marked by a dashed vertical line.

[0193] In global processing mode, all pixels 2 of the CMOS image sensor 1 are synchronously reset at the beginning of a clock cycle of the first clock signal 36 and then re-exposed and evaluated. The reset is performed by the second reset circuit Rg, which is configured to interact with the first memory 33 and with the first reset circuit Rs of the pixels 2 and the second counter 31, thus functioning as a global reset circuit. The pulse diagram in Fig. 5a illustrates how the detection of the start signal S by the first counter 37 initiates the processing of the first clock signal 36, and simultaneously, a defined initial state for all pixels 2 is generated by a global reset of the second reset circuit Rg. The exposure of the pixels 2, or rather...The detection of any photon incident on the photodetectors 21 of pixels 2 begins with the closing of the photocurrent switches 23 of pixels 2. Simultaneously with the closing of the photocurrent switch 23, the second clock signal 32 is also initiated. In global processing mode, the individual pixels 2 of the CMOS image sensor 1 now detect the respective photon incident until the first comparator 25 of the respective pixel 2 determines that a first threshold value T, specified by the control unit 3, has been reached. If the first threshold value T is reached for a pixel 2, a time marker ti is generated for this pixel 2, and the photocurrent switch 23 for this pixel 2 is opened. Depending on the light incident, this can happen earlier or later within the frame clock, i.e., the clock of the first clock signal 36. This is illustrated in the pulse diagram in Fig. 5a by the different signal interruptions of signal 23 in the areas marked with a stem.In global processing mode, the re-exposure of pixel 2 now only occurs with the next clock cycle of the first clock signal 36, so that for each clock cycle of the first clock signal 36, each pixel 2 is only exposed and evaluated once, and thus also for columns Si, S2, . . . , S. x of the CMOS image sensor 1 per clock cycle of the first clock signal 36 only one subpixel-accurate vertical position COG V a focus of brightness Hi v; within the respective column Si, S2, ..., S x can be determined. IP Ventures UG (limited liability) - 31 / 44 - December 10, 2025

[0194] D-82069 Schäftlarn S91154 WO HL / NU / ch

[0195] In the column-based processing mode, as exemplified in Fig. 5b, a defined initial state for all pixels 2 is generated after the detection of the start signal S by the first counting unit 37 and the initiation of processing the first clock signal 36. The corresponding reset is also controlled by the logic unit 38, preferably via the first reset circuit Rs of the pixels 2 and the second counting unit 31. Here, too, the exposure of the pixels 2, or rather the detection of any photon incident on the photodetectors 21 of the pixels 2, begins with the closing of the photocurrent switches 23 of the pixels 2, whereby the second clock signal 32 is also started simultaneously with the closing of the photocurrent switch 23. In contrast to the previously described global processing mode, in the column-based processing mode, if Si, S2, ..., S is detected in a column, the second clock signal 32 is also triggered. xof the CMOS image sensor 1 a sufficient number of pixels 2 have reached the first threshold T to preferentially measure the brightness Hi according to the invention v; ih of the individual pixel 2 based on the timestamps ti stored in the first memory 33 and preferably the subpixel-accurate vertical position COG V of the center of brightness Hjv;ih within the respective column Si, S2, . . . , S x to determine, having reached the first threshold T, the exposure is initiated by opening the photocurrent switches 23 of pixel 2 of this column Si, S2, . . . , S x The data was stopped, evaluated, and then – controlled by logic unit 38 – pixel 2 of the respective column Si, S2, ... , S x The first reset circuit Rs is reset. Independent of the first clock signal 36, i.e., the frame clock, this allows for an advantageous immediate further exposure of pixel 2 of column Si, S2, ... , S. xThis is done. Figure 5b shows that the column-based method mode makes it possible in this way to perform the following for a column Si, S2, ... , S x For example, five exposure phases per clock cycle of the first clock signal 36 could be achieved. Thus, in the example shown, five subpixel-accurate vertical positions (COG) could be advantageously obtained using the column-based method mode. V of the center of brightness Hi v; within the respective column Si, S2, ... , S x within one clock cycle of the first clock signal 36, while in global procedure mode only a single subpixel-accurate vertical position COGy can be determined.

[0196] The present invention relates to a method for the fast and energy-efficient operation of a CMOS image sensor 1, which can be used in particular in laser triangulation or similar methods that project a light line with a Gaussian intensity profile onto the CMOS image sensor 1. The invention is described in IP Ventures UG (limited liability) - 32 / 44 - December 10, 2025

[0197] D-82069 Schäftlarn S91154 WO HL / NU / ch is characterized in particular by the fact that the brightness Hjv;ih of the individual pixels 2 is determined solely on the basis of time markers ti stored in a memory 33, thus preventing overexposure of the pixels 2 and consequently of the CMOS image sensor 1, and thereby increasing its dynamic range. Furthermore, only pixel information (time marker ti and position i) is stored. v; ih) of pixels 2 whose exposure has reached a predetermined threshold T, and unexposed pixels 2 are disregarded. Since the power consumption of an image sensor is proportional to the data throughput, the data processing and transmission optimized according to the invention not only lead to an increase in the scan rate, but also to lower power consumption and thus to a particularly energy-efficient operation of the CMOS image sensor 1.

[0198] IP Ventures UG (limited liability) - 33 / 44 - December 10, 2025

[0199] D-82069 Schäftlarn S91154 WO HL / NU / ch

[0200] Reference symbol list

[0201] 1 CMOS image sensor

[0202] 11. Row access circuit

[0203] 12-column access circuit

[0204] 2 pixels

[0205] 21 Photodetector

[0206] 22 Photocurrent

[0207] 23 photoelectric switches

[0208] 24 Integration capacitor

[0209] 25 Comparator

[0210] 3 Control unit

[0211] 31 Counting unit, especially second counting unit

[0212] 32 Clock signal, especially second clock signal

[0213] 33 Memory, especially first memory

[0214] 34 Data readout unit

[0215] 35 computing unit

[0216] 36 First clock signal

[0217] 37 First counting unit

[0218] 38 logic units

[0219] COGv Position of the centroid within a column (St,

[0220] S2, ... , S X )

[0221] COGh Position of the brightness center within a line (Zi;

[0222] Z2; ... ; Z X )

[0223] Hi V ;ih brightness at position (i v ; ih)

[0224] H max maximum brightness

[0225] Hma x-1, Hma x-2

[0226] Hma X -n brightness values ​​(each decreasing brightness) IP Ventures UG (limited liability) - 34 / 44 - December 10, 2025

[0227] D-82069 Schäftlarn S91154 WO HL / NU / ch vertical position of pixel (2) ih horizontal position of pixel (2)

[0228] Eiv i v * Hi V ;ih Sum of products from vertical position (i v ) and brightness

[0229] (H iv ; ih)

[0230] E,h ih * Hiv; ih Sum of the products of horizontal position (ih) and brightness

[0231] (HIV; ih)

[0232] L laser line

[0233] R Reset circuit

[0234] R's first reset circuit

[0235] Rg second reset circuit

[0236] S Start signal

[0237] Zi, Z2, . . . , Z x Row of pixels (2) of the CMOS image sensor (1) Si, S2, . . . , S xColumn of pixels (2) of the CMOS image sensor (1) T threshold ti time marker tmin smallest time marker (corresponds to the shortest time until the threshold (T) is reached) tmin+1, tmin+2, . . . , tmin+n time markers (each longer time until the threshold (T) is reached)

Claims

IP Ventures UG (limited liability) - 35 / 44 - December 10, 2025 D-82069 Schäftlarn S91154 WO HL / NU / ch Patent claims 1. Method for operating a CMOS image sensor (1), wherein the CMOS image sensor (1) comprises at least: a regular arrangement of pixels (2) in columns (Si, S2, ... , S x ) and rows (Zi, Z2, . . . , Z x ); wherein the pixels (2) each comprise at least one photodetector (21) and at least one comparator (25); and a control unit (3), wherein the control unit (3) comprises a counting unit (31) for processing a clock signal (32) and for generating time markers (ti), and at least one memory (33); and wherein the control unit (3) is configured to specify at least one threshold value (T) for a photon incidence; comprising at least the following process steps: Resetting a pixel voltage of the photodetectors (21) of all pixels (2) to a defined initial value; Reset all timestamps (ti) to zero; Clearing memory (33); Starting the clock signal (32) at the start of an exposure of the CMOS image sensor (1); Detecting each photon incidence using the photodetector (21) of the respective pixel (2); Comparing the actual value of the detected photon incidence of each pixel (2) with the threshold value (T) for photon incidence specified by the control unit (3) using the respective comparator (25) of the respective pixel (2); if the threshold value (T) is exceeded for a pixel (2), a time marker (ti) for this pixel (2) is generated by the counting unit (31); Storing the timestamp (ti) for this pixel (2) in memory (33); Reading the memory (33); and IP Ventures UG (limited liability) - 36 / 44 - December 10, 2025 D-82069 Schäftlarn S91154 WO HL / NU / ch Determining a brightness (Hiv; ih) of the individual pixels (2) based on the time stamps (ti) stored in memory (33).

2. The method of claim 1, wherein the memory (33) is at least a columnar memory, in particular a columnar memory operated according to the FIFO principle, and wherein the time stamp (ti) generated for a specific pixel (2) is stored together with a vertical position (i) v ) of pixel (2), in particular with the respective row number (Zi, Z2, . . . , Z x ) of the CMOS image sensor (1) of the respective pixel (2), in which column memory is stored; and / or at least a row memory, in particular a row memory operated according to the FIFO principle, and in which the time stamp (ti) generated for a specific pixel (2) is stored together with a horizontal position (ih) of the pixel (2), in particular with the respective number of the column (Si, S2, ... , S x) of the CMOS image sensor (1) of the respective pixel (2), in which line memory is stored.

3. The method of claim 1, wherein the memory (33) is at least a global memory, in particular a global memory operated according to the FIFO principle, and wherein the time stamp (ti) generated for a particular pixel (2) is stored together with the horizontal (ih) and the vertical (i) v ) Position of the respective pixel (2) on the CMOS image sensor (1), in particular together with the respective number of the column (Si, S2, ..., S x ) and the respective line number (Zi, Z2, ... , Z x ) of the CMOS image sensor (1) of the respective pixel (2), in which global memory is stored.

4. Method according to claim 3, wherein, prior to reading the memory (33), the stored value triples comprising time stamp (ti) and associated horizontal (ih) and vertical (i) v ) Position of the respective pixel (2) according to columns (Si, S2, ..., Sx ) or lines (Zi, Z2, . . . , Z x ) are sorted.

5. Method according to one or more of the preceding claims, wherein the control unit (3) specifies two or more threshold values ​​(T) and each pixel (2) is cor- IP Ventures UG (limited liability) - 37 / 44 - December 10, 2025 D-82069 Schäftlarn S91154 WO HL / NU / ch responding to this comprises two or more comparators (25), in particular one comparator (25) for each threshold value (T) specified by the control unit (3).

6. A method according to one or more of the preceding claims, wherein the generation and storage of timestamps (ti) for pixels (2) within a column (St, S2, . . . , S x ) is terminated after a predetermined number of pixels (2), in particular after 2, 3, 4, 5, 6, or more pixels (2), wherein the predetermined number of pixels (2) is preferably even, in particular 2, 4 or 6 pixels (2).

7. Method according to one or more of the preceding claims, wherein the generation and storage of timestamps (ti) for pixels (2) by the control unit (3) is performed only for a previously defined area within a column (Si, S2, ... , S x ), especially only for previously defined rows (Zi, Z2, . . . , Z x ) within a column (Si, S2, ... , Sx).

8. Method according to one or more of the preceding claims, wherein the brightness (Hi) is determined v; ih) of the individual pixels (2) of a column (Si, S2, ... , S x ) first, the pixel (2) with the smallest time stamp (tmin) is determined and designated as pixel (2) with the greatest brightness (H). max ) is classified; then the one corresponding to the pixel (2) with the greatest brightness (H) max ) neighboring pixels (2) within a column (Si, S2, ... , S x) are each compared with each other and the pixel (2) with the next largest time marker (tmin+i) compared to the smallest time marker (tmin) is assigned the next lower brightness (Hmax-i), and so on, until all pixels (2), in particular all pixels (2) for which time markers (ti) are stored in memory (33), have a brightness (Hi v; ih) is assigned; and / or for determining brightness (Hi v; ih) of the individual pixels (2) of a row (Zi, Z2, ... , Z X ) first, the pixel (2) with the smallest time stamp (tmin) is determined and designated as pixel (2) with the greatest brightness (H). max ) is classified; IP Ventures UG (limited liability) - 38 / 44 - December 10, 2025 D-82069 Schäftlarn S91154 WO HL / NU / ch then the one with the greatest brightness (H) pixel (2). ma x) neighboring pixels (2) within a row (Zi, Z2, . . . , Z x) are each compared with each other and the pixel (2) with the next largest time marker (tmin+i) compared to the smallest time marker (tmin) is assigned the next lower brightness (Hmax-i), and so on, until all pixels (2), in particular all pixels (2) for which time markers (ti) are stored in memory (33), have a brightness (Hi v; ih) is assigned.

9. Method according to claim 8, wherein a distribution of brightness (Hi) is determined V ;ih) of individual pixels (2); within a column (Si, S2, . . . , S x ): the respective brightness (Hi v; ih) each pixel (2) marked with a time stamp (ti) with a vertical position (i v ) of the respective pixel (2) is multiplied; a sum (Si V i v * Hi v; ih) all products thus obtained from brightness (Hi V ;ih) and vertical position (i v ) is formed; the sum obtained (Si v i v* Hi v; ih) by a sum (Si v Hi v; ih) of all brightness levels (Hi v; ih) the pixels (2) of the respective column (Si, S2, ... , S) marked with a timestamp (ti) x ) is divided; and thereby a subpixel-accurate vertical position (COG) V ) of a center of brightness (Hi v; ih) within the respective column (Si, S2, ... , S x ) is determined; and / or within a row (Zi, Z2, . . . , Z x ): the respective brightness (Hi v; ih) each pixel (2) marked with a time stamp (ti) is multiplied by a horizontal position (ih) of the respective pixel (2); a sum (Sih ih * Hi v; ih) all products thus obtained from brightness (Hi V ;i ) and horizontal position (ih) is formed; the resulting sum (Sih ih * Hi v; ih) by the sum (Sih Hi v; ih) of all brightness levels (Hi v;ih) within the respective row (Zi, Z2, . . . , Z x ) is divided; and thereby a subpixel-accurate horizontal position (COGh) of a center of brightness (Hi) v; ih) within the respective row (Zi, Z2, . . . , Z x ) is determined. IP Ventures UG (limited liability) - 39 / 44 - December 10, 2025 D-82069 Schäftlarn S91154 WO HL / NU / ch 10. Method according to claim 9, wherein a laser line (L) is traced across the regular arrangement of pixels (2) in columns (Si, S2, ... , S x ) and rows (Zi, Z2, . . . , Z x ) of the CMOS image sensor (1) is determined by the vertical position (COGy) of the center of luminance (Hi) v; ih) for multiple columns (Si, S2, ... , Sx), preferably for each individual column (Si, S2, ... , S x ), is determined.

11. Method according to one or more of the preceding claims, wherein the exposure of the respective pixel (2) is interrupted upon reaching the threshold value (T), in particular by opening a photocurrent switch (23) associated with the respective pixel (2), wherein preferably an integrating capacitor (24) associated with the respective pixel (2) is discharged by means of a reset circuit (R) associated with the respective pixel (2).

12. Method for operating a CMOS image sensor (1) in asynchronous manner, in particular according to one of the preceding claims, wherein the CMOS image sensor (1) comprises at least a regular arrangement of pixels (2) in columns (Si, S2, ... , S x ) and lines (Zi, Z2, ..., Z x); wherein the pixels (2) each comprise a photodetector (21), a photocurrent switch (23), an integrating capacitor (24), a first reset circuit (Rs), and a first comparator (25); and a control unit (3), wherein the control unit (3) comprises at least: a first counter unit (37) for processing a first clock signal (36) and a start signal (S); a second counter unit (31) for processing a second clock signal (32) and for generating time markers (ti), wherein the second counter unit (31) is connected to the first reset circuit (Rs) of the pixels (2) such that the second counter unit (31) is resettable by the first reset circuit (Rs); a first memory (33); a second reset circuit (Rg), IP Ventures UG (limited liability) - 40 / 44 - December 10, 2025 D-82069 Schäftlarn S91154 WO HL / NU / ch wherein the second reset circuit (Rg) is configured to interact with the first memory (33) and with the first reset circuit (Rs) of the pixels (2) and the second counting unit (31); and a logic unit (38) configured to interact with the first memory (33), the first reset circuit (Rs) of the pixels (2) and the second counting unit (31), as well as with the second reset circuit (Rg) and the photocurrent switches (23) of the pixels (2); and wherein the control unit (3) is configured to specify a first threshold value (T) for a photon incidence; comprising at least the following process steps: (a) Resetting a pixel voltage of the photodetectors (21) of all pixels (2) to a defined initial value; (b) Reset all timestamps (ti) to zero; (c) Erasing the first memory (33); (d) Starting the processing of the first clock signal (36) by the first counting unit (37) upon detection of the start signal (S); (e) Starting the second clock signal (32) at the start of an exposure of the CMOS image sensor (1) by closing the photocurrent switches (23); (f) Detecting each photon incident using the photodetector (21) of the respective pixel (2); (g) Comparing an actual value of the detected photon incidence of each pixel (2) with the first threshold value (T) for photon incidence specified by the control unit (3) using the respective first comparator (25) of the respective pixel (2); (h) when the first threshold (T) at a pixel (2) is exceeded, the second counting unit (31) generates a timestamp (ti) for that pixel (2); (i) Storing the time stamp (ti) for this pixel (2) in the first memory (33); (j) Reading the first memory (33); and (k) Determining a brightness (Hi v; ih) of the individual pixels (2) based on the timestamps (ti) stored in the first memory (33). IP Ventures UG (limited liability) - 41 / 44 - December 10, 2025 D-82069 Schäftlarn S91154 WO HL / NU / ch 13. Method according to one or more of the preceding claims 12, wherein the logic unit (38) controls the following method steps at the beginning of each new clock cycle of the first clock signal (36), in particular by means of the second reset circuit (Rg): (l) Resetting the pixel voltage of the photodetectors (21) of all pixels (2) to the defined initial value; (m) Reset all timestamps (ti) to zero; (n) Erase first memory (33); (o) Starting the second clock signal (32) and simultaneously closing the photocurrent switches (23) of all pixels (2); and then performing at least the procedure steps (f) to (k).

14. Method according to one or more of the preceding claims 12, wherein the logic unit (38) after once executing the method steps (a) to (e) performs the following method steps for each individual column (Si, S2, ... , S x ) regardless of the other columns (Si, S2, ... , S x ) controls: (p) Execution of process steps (f) to (k) for the pixels (2) of the respective column (Si, S2, . . . , S x ); (q) Resetting the pixel voltage of the photodetectors (21) of the pixels (2) of the respective column (Si, S2, . . . , S x ) to the defined initial value using the first reset circuit (Rs) of the pixels (2) of this column (Si, S2, ... , S x ); (r) Reset the timestamps (ti) of the pixels (2) of the respective column (Si, S2, . . . , S x ) to zero using the first reset circuit (Rs) of the second counting unit (31); (s) Delete all entries for the pixels (2) of the respective column (Si, S2, ... , S x ) in the first memory (33); (t) Starting the second clock signal (32) for the respective column (Si, S2, . . . , S x ) and simultaneously closing the photocurrent switches (23) of all pixels (2) of the respective column (Si, S2, ... , S x ); wherein the process steps (p) to (t) are repeated, preferably until a termination criterion is reached. IP Ventures UG (limited liability) - 42 / 44 - December 10, 2025 D-82069 Schäftlarn S91154 WO HL / NU / ch 15. Method according to claim 14, wherein the results of the determination of brightness (Hi) V ;ih) according to procedure step (k) for the individual columns (Si, S2, S x ) are synchronized using the first clock signal (36).

16. CMOS image sensor (1), comprising at least: a regular arrangement of pixels (2) in columns (Si, S2, ... , Sx ) and lines (Zi, Z2, ... , Z x ); wherein the pixels (2) each comprise at least one photodetector (21) and at least one comparator (25); and a control unit (3), wherein the control unit (3) comprises a counting unit (31) for processing a clock signal (32) and for generating time markers (ti), and at least one memory (33); and wherein the control unit (3) is configured to specify at least one threshold value (T) for a photon incidence, characterized in that the control unit (3) is configured to carry out the method according to any one of claims 1 to 11.

17. CMOS image sensor (1), comprising at least: a regular arrangement of pixels (2) in columns (Si, S2, ... , S x ) and lines (Zi, Z2, ..., Z x); wherein the pixels (2) each comprise a photodetector (21), a photocurrent switch (23), an integrating capacitor (24), a first reset circuit (Rs) and a first comparator (25); and a control unit (3), wherein the control unit (3) comprises at least: a first counter unit (37) for processing a first clock signal (36) and a start signal (S); a second counter unit (31) for processing a second clock signal (32) and for generating time markers (ti), wherein the second counter unit (31) is connected to the first reset circuit (Rs) of the pixels (2) such that the second counter unit (31) is resettable by the first reset circuit (Rs); IP Ventures UG (limited liability) - 43 / 44 - December 10, 2025 D-82069 Schäftlarn S91154 WO HL / NU / ch a first memory (33); a second reset circuit (Rg), wherein the second reset circuit (Rg) is configured to interact with the first memory (33) and with the first reset circuit (Rs) of the pixels (2) and the second counting unit (31); and a logic unit (38), which is configured to interact with the first memory (33), the first reset circuit (Rs) of the pixels (2) and the second counting unit (31), as well as with the second reset circuit (Rg) and the photocurrent switches (23) of the pixels (2); and wherein the control unit (3) is configured to specify a first threshold value (T) for a photon incidence, characterized in that the control unit (3) is configured to execute the method according to one of claims 12 to 15.

18. CMOS image sensor (1) according to claim 16 or 17, characterized in that each pixel (2) comprises two or more comparators (25).

19. CMOS image sensor (1) according to one of claims 16 to 18, characterized in that the CMOS image sensor (1) is designed as a BSI sensor.

20. Use of a CMOS image sensor (1) according to one of claims 16 to 19 in object measurement and / or object inspection methods in which only a part of the pixels (2) of a CMOS image sensor (1) is exposed, in particular in methods in which a line of light with a Gaussian intensity profile is imaged onto the CMOS image sensor (1); or in methods in which a single point of light or several single points of light are imaged onto the CMOS image sensor (1).

Images