Method and apparatus for manufacturing electroactive devices

Abstract

An electroactive device is disclosed. The electroactive device comprises a base, an active layer deposited above the base, and a support structure, wherein the support structure comprises an array of support elements set between the base and the active layer.

Description

6700171.00003METHOD AND APPARATUS FOR MANUFACTURING ELECTROACTIVE DEVICESTECHNICAL FIELD

[0001] The present disclosure relates to manufacture and structure of electroactive devices. Further, the present disclosure relates to an apparatus for use in manufacturing electroactive devices.BACKGROUND OF THE INVENTION

[0002] Electroactive devices are devices that can be electrically active. For example, electromagnetic radiation incident on an electroactive device may give rise to a voltage difference and / or generate a current flow. Electroactive devices include, but are not limited to, material stacks able to store and / or release electric energy by energy conversion, by trapping electric energy, by operating as sensing devices that convert a change of impinging energy into a change of electric energy flow. Activity of the electroactive device depends on various properties including the structural design of the electroactive device. For example, activity of a photovoltaic cell depends, amongst other properties, on a surface area of electroactive material exposed to incident radiation.

[0003] It is generally desirable to increase the electroactivity of the electroactive device.OVERVIEW

[0004] The following presents a simplified summary to provide a basic understanding of one or more aspects of the invention. This summary is not an extensive overview of the invention, and it is neither intended to identify key or6700171.00003 critical elements of the invention, nor to delineate the scope thereof. Rather, the primary purpose of the summary is to present some concepts of the invention in a simplified form as a prelude to the more detailed description that is presented later.

[0005] In an aspect, a method according to some embodiments comprises providing a substrate having an insulation layer on a base, wherein the insulation layer comprises at least one window to the base, setting at least one support element into the at least one window onto the base, and depositing an active layer on the at least one support element. In some embodiments according to the invention in the aspect, the method is provided as defined in the corresponding independent method claim.

[0006] In another aspect, an apparatus for use in manufacturing electroactive devices according to some embodiments comprises a cutting jig configured to support a filament mesh while being cut, whereby a plurality of filament shreds are aligned with a predetermined array layout, a setting jig configured to receive a plurality of filament shreds, and a control system configured to control the setting jig relative to a substrate to enable transfer the plurality of filament shreds to the substrate. In some embodiments according to the invention in the another aspect, the apparatus is provided as defined in the independent apparatus claim.

[0007] In still another aspect, an electroactive device according to some embodiments comprises a base, an active layer deposited above the base, and a support structure, wherein the support structure comprises an array of support elements set between the base and the active layer. In some embodiments according to the invention in the still another aspect, the device is provided as defined in the independent device claim.

[0008] In a further aspect, a method for providing a support structure in an electroactive device according to some embodiments comprises providing a filament mesh comprising a plurality of warps and weft, severing the weft from the warp, attracting filament shreds of the warp to a setting jig, and setting the setting jig to a substrate. In some embodiments according to the invention in the further6700171.00003 aspect, the method is provided with steps as defined in the corresponding independent method claim.

[0009] In another further aspect, a filament mesh comprises multiple dense mesh portions where a plurality of warps and weft provide a dense mesh. The multiple dense mesh portions are spaced apart from one another by a wide mesh size portion formed by sections of the plurality of warps free from weft. In some embodiments according to the invention in the another further aspect, the filament mesh is provided as defined in the independent filament mesh claim.

[0010] The independent claims define the invention in various aspects. The dependent claims state selected elements of embodiments according to the invention in respectively one of the various aspects. It is to be noted that features of these embodiments may be combined with each other unless specifically noted to the contrary. For example, elements of method embodiments may be implemented in embodiments of the system. For example, features of an embodiment of the system may be used to perform steps of an embodiment of the method.

[0011] This summary is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter. Other methods, apparatus and systems are also disclosed. Those skilled in the art will recognise additional features and advantages upon reading the following detailed description, and upon viewing the accompanying drawings.BRIEF DESCRIPTION OF THE DRAWINGSFIGS 1A and 1 B show a flow diagram illustrating selected steps of a method of manufacturing an electroactive device according to some embodiments.6700171.00003FIGS 2A to 20 are drawings that schematically illustrate cross-sectional views of an exemplary semi-finished product at various steps in performing a manufacturing method according to some embodiments.Fig 3 is a diagram that schematically illustrates a cross-sectional view of an exemplary semi-finished product according to some embodiments.FIG 4 is a drawing that schematically illustrates a cross-sectional view of a layered structure in the semi-finished product according to some embodiments.FIG 5 is a drawing that schematically illustrates a top view of an exemplary semi-finished product at one step of the various steps of the manufacturing method illustrated in FIGS 2A to 20 according to some embodiments.FIG 6 is a drawing that schematically illustrates an enlarged cross-sectional view of a portion of the exemplary semi-finished product shown in FIG 2H.FIG 7 is a drawing that schematically illustrates the device illustrated in FIG 3 according to some embodiments.FIG 8 is a drawing that schematically illustrates use of the device illustrated in FIG 3 in a sandwich arrangement according to some embodiments.FIGS 9A and 9B show a flow diagram to illustrate steps of a method according to some embodiments.FIG 10 is a drawing that schematically illustrates a filament mesh according to some embodiments.FIG 11 is a drawing that schematically illustrates an array of filament shreds according to some embodiments.FIGS 12A to 12G are drawings that illustrate an apparatus according to some embodiments.FIGS 13A to 13C are drawings that illustrate an apparatus according to some embodiments.FIGS 14A to 14C are drawings that illustrate an apparatus according to some embodiments.6700171.00003FIGS 15A to 15C are drawings that illustrate an apparatus according to some embodiments.FIGS 16A to 16C are drawings that illustrate an apparatus according to some embodiments.FIGS 17A and 17B are drawings that illustrate use of the apparatus illustrated in FIGS 12A to 13C according to some embodiments.FIGS 18Ato 18C are drawings that illustrate use of the apparatus illustrated in FIGS 13A to 14C according to some embodiments.FIGS 19A and 19B are drawings that illustrate use of the apparatus illustrated in FIGS 14A to 15C according to some embodiments.FIGS 20Ato 20D are drawings that illustrate use of the apparatus illustrated in FIGS 15A to 16C according to some embodiments.DETAILED DESCRIPTION OF THE INVENTION

[0012] Below, embodiments, implementations and associated effects are disclosed with reference to the drawings. It should be noted that views of exemplary embodiments are merely to illustrate selected features of the embodiment. Particularly, cross-sectional views are not drawn to scale and dimensional relationships of the illustrated structures can differ from those of the illustrations. As used herein, like terms refer to like elements throughout the description.

[0013] Features of various embodiments described herein may be combined with each other, unless specifically noted otherwise. In some instances, well- known features are omitted or simplified to clarify the description of the exemplary implementations. The order in which the embodiments / implementations and methods / processes are described is not intended to be construed as a limitation, and any number of the described implementations and processes may be combined.6700171.00003

[0014] FIG 3 is a diagram that schematically illustrates a cross-sectional view of an exemplary solar module stack 300 according to some embodiments. The solar module stack comprises a plurality of cells 301 a, 301 b, 301 c (only one cell 301 b is fully shown in FIG 3, while other cells 301 a, 301 c are merely partially shown).

[0015] Below, the exemplary solar module stack 300 will be described in more detail, wherein layers and / or elements and / or components of the exemplary solar module stack 300 are described from top to bottom. It should meanwhile be understood that the term “top” relates to the illustration in FIG 3 which is based on a use of the solar module stack in a solar module, wherein the solar module stack could be exposed to sunlight and accordingly, in use, be oriented to face the sun. However, the term “top” and other directional terms should not be understood as limiting as to how the exemplary solar module stack 300 is oriented or located in a composite full product to achieve exposure to sunlight.

[0016] The exemplary solar module stack 300 comprises a base that, in the example of the solar module stack 300, forms a superstrata configured to be on top of other layers and thus to face sunlight incident on the solar module stack 300.

[0017] The base comprises a carrier sheet 310. Further, the exemplary solar module stack 300 comprises a base contact layer 320. In some embodiments the base contact layer 320 is disposed directly below the carrier sheet 310. Further, the exemplary module stack 300 comprises a rear contact layer 390 provided below the base contact layer 320. The base contact layer 320 and the rear contact layer 390 are electrically separated by an insulation layer 330 disposed between the base contact layer 320 and the rear contact layer 390. Further, an active layer 380 is disposed between the base contact layer 320 and the rear contact layer 390. In some embodiments, the active layer 380 is in electrical contact with the rear contact layer 390. In some embodiments, the active layer 380 is provided between the insulation layer 330 and the rear contact layer 390. In some embodiments (not shown in FIG 3), the active layer is provided between the base6700171.00003 contact layer and the insulation layer. At least one effect can be that the solar module stack 300 can be used as an active cell element in a solar module, wherein the active cell element is configured to convert incident sunlight into electric energy. In some embodiments the electric power is a product of a voltage and a current flow between the base contact layer 320 and the rear contact layer 390.

[0018] In some embodiments, the active layer 380 forms part of a typical solar cell stack as will now briefly be described with reference to FIG. 4 which is a drawing that schematically illustrates a layered structure in the semi-finished product 300 according to some embodiments. In the exemplary embodiment illustrated in FIG. 4, the layered structure comprises a front contact layer 385 and the rear contact layer 390. In some embodiments, the layered structure comprises the active layer 380. In some embodiments, one or more of the following properties can characterize the active layer: spectral sensitivity, chemical sensitivity, stoichiometric property, alloy composition, crystalline property, magnetoresistance. In some embodiments, the active layer 380 is electroactive. In some embodiments, the active layer 380 is configured to be photo-electroactive. For example, the active layer 380 forms a stack that comprises but one sub-stack. This sub-stack comprises a semiconducting material layer 388 having a p-doped portion 387 facing the front contact layer 385 and an n-doped portion 389 facing the rear contact layer 390. In some embodiments, the active layer 380 is configured to be electro-chemically active. With the active layer 380 sandwiched between the (second) front conductive layer 385 and the rear contact layer 390, the layered structure forms a typical solar cell stack.

[0019] In some embodiments (not shown), the active layer comprises a stack having a plurality of sub-stacks. In some embodiments, the plurality of sub-stacks comprises different sub-stacks, where each of the different sub-stacks has different characteristics. For example, the different sub-stacks differ in respect of one or more of a group of characteristics comprising: spectral sensitivity, chemical sensitivity, stoichiometric property, alloy, crystalline property, magneto-resistivity.6700171.00003In an embodiment, where a plurality of sub-stacks are deposited on top of one another, at least one effect can be that the stack comprises a plurality of cells.

[0020] In some embodiments, the active layer 380 comprises silicon, for example, amorphous silicon, micro-crystalline silicon, and silicon-alloys such as SiGe, SiC. In some embodiments, the active layer 380 comprises a lll-V semiconductor compound, for example, GaN, GaAs, InP and any combination thereof provided, for example, in one or more alloys. In some embodiments, the active layer 380 comprises Gallium, for example, GaN and / or GaAs. In some embodiments, the active layer comprises other materials than semiconductor material, for example, a mineral such as a perovskite. In some embodiments, the active layer comprises an organic compound.

[0021] Now, again with reference to FIG. 3, in some embodiments the base contact layer 320 is generally formed continuously on the carrier sheet 310. However, a plurality of windows 332a, 332b that, for example, are filled with insulation material from the insulation layer 330 provide non-conducting wells in the base contact layer 320. Thus, seen in a plane along the solar module stack 300, the base contact layer 320 is structured. At least one effect can be that a plurality of cells 301a, 301 b, 301c are electrically separated from one another at the level of the base contact layer 320. In some embodiments, the base contact layer 320 is otherwise homogeneous within each of the cells of the plurality of cells 301a, 301 b, 301 c.

[0022] The rear contact layer 390, in some embodiments, is generally formed continuously below the carrier sheet 310. In some embodiments, the rear contact layer 390 comprises a plurality of windows 302a, 302b. In some embodiments, the plurality of windows 302a, 302b are formed as trenches, for example, by selectively removing material from the rear contact layer 390. For example, laser ablating can be used to form non-conducting wells in the rear contact layer 390. In some embodiments, the trenches are formed as stripes that are aligned in parallel to one another. Thus, seen in a plane across the semi-finished product 300, the rear6700171.00003 contact layer 390 is electrically structured. At least one effect can be that the plurality of cells 301a, 301 b, 301c are electrically separated from one another at the level of the rear contact layer 390.

[0023] The solar module stack 300 comprises a support structure 370 provided between the base contact layer 320 and the rear contact layer 390. In particular, in some embodiments, the support structure 370 is provided between the base contact layer 320 and the active layer 380. In some embodiments, the support structure 370 comprises a plurality of support elements 371 a, 371 b, 371 c. In some embodiments, the plurality of support elements 371a, 371 b, 371 c are disjoint. In some embodiments, the plurality of disjoint support elements 371 a, 371 b, 371 c are spaced apart from one another in a predetermined array layout. In some embodiments, the support structure is provided by the plurality of support elements 371a, 371 b, 371 c provided as columns that are set upright to the base contact layer 320 and / or that are essentially parallel to one another. In some embodiments, the plurality of support elements 371a, 371 b, 371 c comprise each a monolith. In some embodiments, the plurality of support elements 371 a, 371 b, 371 c are each monolithic.

[0024] In some embodiments, an adhesive layer 360 is provided on the base contact layer 320 and the support structure 370 is set onto the adhesive layer 360. In some embodiments, the plurality of support elements 371a, 371 b is affixed to the base contact layer 320 by adhesive portions 362a, 362b, 362c of the adhesive layer. In some embodiments (not shown), the plurality of support elements 371 a, 371 b, 371 c is soldered to the base contact layer 320. In some embodiments (not shown), the plurality of support elements 371 a, 371 b, 371c is welded to the base contact layer 320.

[0025] At least one effect can be an increase of surface area available for support of the active layer 380. The plurality of support elements 371 a, 371 b, 371 c each have a footprint surface where the plurality of support elements 371 a, 371 b, 371 c face the base contact layer 320 or adhesive portions 362a, 362b, 362c that6700171.00003 sticks the plurality of support elements 371 a, 371 b, 371 c to the base contact layer 320. Further, the plurality of support elements 371 a, 371 b, 371 c each have a support surface that faces material of a layer opposite to the base contact layer 320 and thereby can generally be available for support of the active layer 380. The support surface of the plurality of support elements 371 a, 371 b, 371 c is larger than the footprint surface of the plurality of support elements 371a, 371 b, 371 c. For example, in some embodiments, the support surface in is a range of from 2 to 100 times as large as the footprint surface. In some embodiments, the support surface in is a range of from 3 to 80 times as large as the footprint surface. In some embodiments, the support surface in is a range of from 4 to 60 times as large as the footprint surface. In some embodiments, the support surface in is a range of from 5 to 40 times as large as the footprint surface. In some embodiments, the support surface in is a range of from 6 to 20 times as large as the footprint surface. In some embodiments, the support surface in is a range of from 7 to 16 times as large as the footprint surface. In some embodiments, the support surface is 8 times as large as the footprint surface. Thus, at least one effect can be that any unit of a stimulus such as radiation incident on a surface 311 of the carrier sheet 310 exposed to the radiation, for example sunlight, can effect more activity in the active layer 380.

[0026] A solar cell based on the semi-finished product including the device can expose a surface area of the active layer 380 to incident radiation that is larger than a planar surface of the solar cell itself exposed to the incident radiation. To illustrate selected effects, reference is now made to FIG 7, which is a drawing that schematically shows an exemplary use of the device illustrated in FIG 3 according to some embodiments. Some details shown in FIG 3 are not shown in FIG 7. In this example, the device is flipped such that, while the carrier sheet 310 forms a substrate, the device is exposed to radiation incident on the device opposite to the substrate, i.e. , from the top. Further, regarding the material in the active layer, for example, as shown in FIG 3 and in FIG 7, in a plurality of active layer portions6700171.00003381a, 381 b, 381 c, a ratio of surface area to volume can be particularly large. For example, in some embodiments, the ratio of surface area to volume is about eight times larger than in a flat cell. To give one example wherein an active layer thickness is 1 pm (micrometer), in an area of 1 cmA2 of a conventional flat cell, the volume of the active layer is 10A8 pmA3. In contrast, in an exemplary embodiment, the support structure on a cell substrate having an area of 1 cmA2 comprises an array of 6400 columns aligned and positioned upright on the substrate. In an embodiment, a column has a cylindrical shape with the radius of the cylinder’s cross-section perpendicular to the cylinder axis being, for example, 40 pm and a height of, for example, 500 pm. Accordingly, the volume of a 1 pm thick active layer deposited on the cell substrate with the exemplary support structure provided thereon is approximately 8.4 * 10A8 pmA3. The above-stated value of number of columns arranged on the area, the shape of column, value of radius, value of height, and so forth merely serve to state an example and can be selected to differ from the respective value stated above. For example, a difference can be in a range of from - 50 % to + 50 % of a value stated above.

[0027] At least one effect can be that radiation, represented in FIG 7 by a plurality of arrows, is more likely to be incident on the active layer 381 a, 381 b, 381 c at an angle close to the glance angle where the radiation is reflected. Radiation incident on the surface at an angle close to the glance angle that crossed a boundary to propagate inside the active layer 380 tends to travel in the active layer 380 like in a waveguide. Correspondingly, the radiation can cause more activation than when simply crossing the active layer 380 as would be more frequent in a material provided with a smaller ratio of surface area to volume.

[0028] In some embodiments, a further increase of efficiency of a solar module can be achieved by stacking two devices as shown in FIG 8 which schematically illustrates an exemplary section of a solar module according to some embodiments. In some embodiments, the solar module comprises two devices, wherein a first device comprises a substrate base 1310 while a second device6700171.00003 comprises a superstrate base 2310. The first device comprises a support structure that comprises a plurality of first device support elements 1371 a, 1371 b, 1371 c arranged in an upright posture above the substrate base 1310. The second device comprises a support structure that comprises a plurality of second device support elements 2371 a, 2371 b, 2371 c arranged in an upright posture below the superstrate base 2310. As described above with reference to the device illustrated in FIG 3, a top surface the superstrate base 2310 is transparent to radiation incident on the solar module at frequencies where the radiation causes electroactivity in the active layers 1381 a, 1381 b, 1381c and / or in the active layers 2381 a, 2381 b, 2381 c. In contrast, a top surface of the substrate base 1310, in some embodiments, can be reflective for radiation.

[0029] As shown in the example illustrated in FIG 8, in some embodiments, the top layers of the devices face each other. Owing to the regularity of the support structure formed by the plurality of first device support elements 1371 a, 1371 b, 1371 c and the corresponding regularity of the support structure formed by the plurality of second device support elements 2371 a, 2371 b, 2371 c, the first device and the second device can be set to one another so intimately as to achieve a cogged combination of the top layers. At least one effect can be a further increase of efficiency of a solar module. Given an area 800 of the solar module's surface exposed to incident radiation, the solar module provides for a particularly long propagation path of radiation inside the electroactive material of the electroactive layer whereby electroactivity of the solar module is enhanced. It can further be contemplated to stack multiple layers of pairwise combinations to further improve the efficiency. In such embodiments, the base substrate of all but the lowest device would be configured to avoid reflection of radiation at frequencies where the active layers are electroactive. Further, in some embodiments, where the solar module comprises a plurality of devices, a first active material used in the active layer of a first device can configured to differ from a second active material used in the active layer of a second device in that a frequency of radiation is different that causes6700171.00003 electroactivity in the active layer. Thus, incident radiation can be used in a broader frequency range to cause electroactivity, whereby efficiency of the solar module is enhanced.

[0030] Now, a method of manufacturing a semi-finished product according to some embodiments will be described. Reference is made to FIGS 1A and 1 B which are a flow diagram illustrating selected steps of an exemplary method 100a, 100b of manufacturing an electroactive device according to some embodiments. Reference is also made to FIGS 2A to 20 that are drawings which schematically illustrate cross-sectional views of an exemplary semi-finished product at various steps in performing a manufacturing method according to some embodiments such as the exemplary method illustrated in the flow diagram of FIGS 1 A and 1 B.

[0031] As will become apparent from the description below, in some embodiments the semi-finished product is layered. In some embodiments, layers of the semi-finished product are built in a sequence starting with a top layer, which, in light of a sequence of deposition steps starting with top layer, can be referred to as a substrate. As will be explained below, the substrate forms a basis for other layers provided in the exemplary manufacturing process.

[0032] At S105, the method comprises providing a carrier sheet 210. In some embodiments, the carrier sheet 210 is essentially transparent to radiation that the electroactive device is designed to be exposed to and used, for example, to generate a current. In some embodiments the carrier sheet 210 comprises glass. In some embodiments, the carrier sheet 210 comprises at least one of a group of glass consisting of float glass, tempered glass. In some embodiments, the carrier sheet 210 is to constitute a superstrata of the semi-finished product. In some embodiments, the finished product can be a solar module that is based on and / or comprises the semi-finished product as discussed, for example, above with reference to FIG 3 that illustrates the exemplary as solar module stack 300. In some embodiments, the superstate is configured to be exposed to radiation incident on the finished product such as sunlight incident on the solar module.6700171.00003

[0033] At S110, the method further comprises providing a base contact layer 220 on the carrier sheet 210 as shown in the example illustrated in FIG 2A. In some embodiments, the base contact layer 220 is configured to conduct charges. In some embodiments, material of the base contact layer 220 comprises at least one of a group of electrically conductive thin film oxides consisting of an oxide such as aluminum doped zinc oxide (AZO), zinc oxide (ZnO) indium thin oxide (ITO). In some embodiments, where the carrier sheet 210 is configured to form a rear substrate, the base contact layer 220 is configured to provide a rear contact layer. In some embodiments, material of the base contact layer 220 comprises at least one of a group of electrically conductive thin film oxides, the group consisting of an oxide, such as aluminum doped zinc oxide (AZO), zinc oxide (ZnO), and indium thin oxide (ITO), and metal, such as aluminum (Al) or molybdenum (Mo). In some embodiments, where the base contact layer 220 comprises electrically conductive thin film oxides, the base contact layer 220 is essentially transparent to radiation in a frequency spectrum range that the electroactive device is configured to be electroactive.

[0034] In some embodiments, at S115, the base contact layer 220 is structured as shown in the example illustrated in FIG 2B. For example, in some embodiments, a laser is used to structure on the base contact layer 220, for example by directing laser radiation energy onto selected portions of the base contact layer 220 that causes ablation of material from the base contact layer 220. In some embodiments, a mask process is used to impart structure on the base contact layer 220. In some embodiments, the structure of the base contact layer 220 comprises contact stripes 220a, 220b that can, for example, be aligned in parallel. At least one effect of structuring the base contact layer 220 can be that the carrier sheet 210 can support a plurality of cells. As an effect of the structuring, on the substrate a plurality of regions that are associated with the plurality of cells, at a level of the base contact layer 220, are electrically separated from one another. Thus, for example, in FIG 2B a right-hand-side flank of a first contact stripe 220a can form6700171.00003 a plus terminal (minus terminal) of a first thin-film solar cell to be, while a left-hand- side flank of a second contact stripe 220b can form a minus terminal (plus terminal) of a second thin-film solar cell to be. As will become apparent from further disclosure below, other process steps can be applied to form electrical couplings between individual ones of the plurality of cells, for example, by electrically linking the first terminal and the second terminal, as desired, needed and / or required. Thus, at least two cells can be connected in series to form a chain whose electroactivity can contribute to a sum of cell voltages to be output by the solar module as a solar module voltage. In some embodiments at least two cells can be connected in parallel with each cell to contribute to a sum of cell currents yielding in a total current at a certain cell output voltage.

[0035] At S120, the method further comprises providing an insulation layer 230 above the carrier sheet 210. In particular, the insulation layer 230 can be provided on the base contact layer 220 as shown in the example illustrated in FIG 2C. In some embodiments, the insulation layer 230 completely covers a top surface of the substrate which, at this stage, is provided by the structured base contact layer 220. In some embodiments, the insulation layer 230 comprises at least one material of a group of materials consisting of: aluminum oxide AlxOy, silicon nitride SixNy, silicon oxide SiOy, silicon oxynitride SixOyNz, and any combination thereof.

[0036] Some embodiments further comprise patterning the insulation layer 230 to form the at least one trench 231 to expose an associated portion of the base contact layer 220 which is disposed below the insulation layer 230. For example, in some embodiments, at S125, the method includes forming a plurality of trenches 231a, 231 b, 231 c in the insulation layer 230 as shown in the example illustrated in FIG 2E. At least one effect can be that portions of the contact layer 220 that are associated with the plurality of trenches 231 a, 231 b, 231 c continue to be exposed to further processing. A serial connection of cells can be achieved in a finished product.6700171.00003

[0037] Some embodiments further comprise patterning the insulation layer 230 to form the at least one window 232 to the associated portion of the base contact layer 220 which is deposited below the insulation layer 230. For example, in some embodiments, at S125, the method includes forming a plurality of windows 232a, 232b, 232c in the insulation layer 230 as shown in the example illustrated in FIG 2E. At least one effect can be that portions 222a, 222b, 222c of the contact layer 220 that are associated with the plurality of windows 232a, 232b, 232c continue to be exposed to further processing.

[0038] For forming the at least one trench 231a, 231 a, 231a and / or the at least one window 232a, 232b, 232c in the insulation layer 230, in some embodiments, as shown in the example illustrated in FIG 2D, etchant is selectively applied in an etchant layer 240 formed on the insulation layer 230. For example, a screenprinting technology can be used to selectively dispose the etchant on the insulation layer 230, wherein the etchant takes the place of ink in a conventional ink screen printing process. In some embodiments the etchant comprises etching paste. In some embodiments, the etching paste comprises etchant substance in solid state such as a powder or an emulsion and / or in liquid state such as a solution. In some embodiments the etchant is selected to selectively etch the insulation material in the insulation layer 230. Meanwhile, unless materials below the insulation layer have same or similar chemo-physical properties as the material of the insulation layer, the layer underneath the insulation layer 230 is essentially not affected by the etchant and, accordingly, remains unaltered. In some embodiments, the etchant comprises one or more etchants from a group of etchants consisting of hydrofluoric acid HF, and phosphoric acid H3PO4.

[0039] Some embodiments further comprise removing etching residuals. At least one effect can be that the substrate is cleaned. Particularly, selected portions 241a, 241 b, 241 c, 242a, 242b, 242c have the etchant deposited on the insulation layer 230, while in other non-selected portions 244a, 244b, 244c the insulation layer 230 is free from etchant.6700171.00003

[0040] In some alternate embodiments, forming the at least one trench 231 a, 231 b, 231 c in the insulation layer 230 and / or forming the at least one window 232a, 232b, 232c in the insulation layer 230 comprises selectively depositing a resistant material on the insulation layer 230 to form an etch mask (not shown). In some embodiments the etch mask is configured to selectively protect the layers underneath such as the insulation layer 230 material from an etchant. For example, the etch mask is exposed to radiation that alters a predetermined property of selected portions of the etch mask. In some embodiments, the resistant material is a positive photoresist, for example a photoresist resin, that is cured and thereby hardened / cross-linked in selected portions of the etch mask layer. The resistant is then removed from those portions that are not selectively hardened / crosslinked. For example, a cleaning step (not shown) is performed to rinse non-cross- linked resin from the semi-finished product towards yielding in a solar module stack. Subsequently, an etchant can be applied to etch selected portions of the insulation layer 230 that are not protected by the etch mask and therefore exposed to the etchant.

[0041] Thus, at S125, the insulation layer 230 is selectively etched. FIG 5 is a diagram that schematically illustrates a top view of an exemplary semi-finished product at one step of the various steps of the manufacturing method illustrated in FIGS 2A to 20 according to some embodiments. As illustrated in FIG 5, at least one effect can be that, at S125, the step of selectively etching the insulation layer 230 forms at least one window 232a, 232b, 232c in the insulation layer 230 comprising exposed selected portions 222a, 222b, 222c of the base contact layer 220 that correspond to the selected portions 242a, 242b, 242c described above. While in the example shown in FIG 5 the at least one window 232a, 232b, 232c is essentially circular, other implementations with one or more different window shapes formed in the insulation layer 230 can also be contemplated. Further, the substrate 200 comprises exposed selected portions 234a, 234b, 234c of the6700171.00003 insulation layer 230 that correspond to the non-selected etchant portions 244a, 244b, 244c described above as shown in the example illustrated in FIG 2D.

[0042] Some embodiments further comprise providing a resist layer on the insulation layer 230. At least one effect can be that a top surface of the insulation layer 230 is covered by the resist layer. In some embodiments, using the resist layer, a photoresist mask is formed. For example, at S130, a photoresist layer 250 is deposited on the substrate. In some embodiments, the photoresist layer 250 comprises a negative photoresist. At least one effect can be that portions of the photoresist layer 250 that are exposed to radiation harden / meaning the polymer- chains of that resin get cross-linked. In an alternate embodiment the photoresist layer 250 comprises a positive photoresist.

[0043] At S135, in some embodiments, the photoresist layer 250 is irradiated with radiation 261 shone onto a patterned mask 260 above the photoresist layer 250 as shown in the example illustrated in FIG 2G. The patterned mask 260 shadows portions of the photoresist layer 250 with respect to the radiation, while leaving other portions exposed to the radiation 261 . The patterned mask 260 is thus used to selectively expose the photoresist layer 250 to the radiation 261 . At least one effect can be that selected portions 256a, 256b, 256c of the photoresist layer 250 are hardened / cross-linked in case of using a negative photoresist.

[0044] In some embodiments, at S140, an etching and / or cleaning step is performed on the substrate whereby lost material of the photoresist layer 250 that is non-cross-linked is removed, while other material of the photoresist layer 250 that is cross-linked continues to cover portions of the insulation layer 230 and / or portions of the base contact layer 220 below. At least one effect can be that crosslinked photoresist material of the photoresist layer 250 can form a hard mask 259 above the insulation layer 230 as shown in the example illustrated in FIG 2H. At least one effect can be that the photoresist layer 250 comprises at least one opening 252a, 252b, 252c. In some embodiments, the resist layer 250 comprises at least one opening 252a, 252b, 252c that is located to expose a central portion6700171.00003 of the at least one window 232a, 232b, 232c in the insulation layer 230 whereby the at least one opening 252a, 252b, 252c in the hard mask 259 can be configured to expose a central portion of the at least one window 232a, 232b, 232c in the insulation layer 230.

[0045] FIG 6 is a drawing schematically illustrating an enlarged cross-sectional view of an exemplary semi-finished product upon performance of step S140 as shown in FIG 2H. Particularly, FIG 6 shows an enlarged view of a section of the embodiment shown in FIG 2H approximately at the circular broken line. In some embodiments, a sidewall 254 of the at least one opening 252a, 252b, 252c has a negative undercut. For example, the undercut of the sidewall 254 is formed while, at S135, the photoresist layer 250 is exposed to radiation 261. In a transition portion of the photoresist layer 250, where a portion of the photoresist exposed to radiation 261 transits into a portion of the photoresist that is shadowed by the patterned mask 260, the photoresist is not cross-linked as much as other portions. For example, where the photoresist comprises a photoactive resin, the resin in the transition portion between a fully exposed portion and a shadow portion is not cured to the same extent as the resin in the fully exposed portion of the photoresist layer 250. In some embodiments (not shown), when irradiating the photoresist layer 250, the radiation can be directed at the photoresist layer 250 at an angle other than perpendicular, whereby the undercut can become more pronounced in the sidewall. At least one effect of the undercut formed in the sidewall 254 can be that in the opening a protruding top portion of the resist layer 250 shadows a lower sidewall portion of the resist layer 250.

[0046] At least one effect of forming the at least one window 232a, 232b, 232c in the insulation layer 230 can be that a plurality of portions 222a, 222b, 222c of the base contact layer 220 are exposed through the at least one window 232a, 232b, 232c in insulation layer 230.6700171.00003

[0047] Some embodiments further comprise, at S145, baking the resist layer. At least one effect can be that material of the resist layer further hardens and stabilizes the hard mask 259 on the insulation layer 230.

[0048] Some embodiments further comprise, at S150, providing an adhesive above the carrier sheet 210. In some embodiments, the adhesive is deposited on the base contact layer 220 as shown in the example illustrated in FIG 2i. In some embodiments, while it is important for the adhesive to bond with the substrate, it may not be important that the adhesive is in direct contact with the base contact layer 220. Accordingly, in an example (not shown) the adhesive is deposited on another layer such as a protective layer above the base contact layer.

[0049] Some embodiments further comprise forming a pattern of adhesive in an adhesive layer. In some embodiments the pattern comprises a two-dimensional symmetry. In some embodiments, adhesive is deposited on the base contact layer 220 not in every window 232a, 232b, 232c, but merely in selected windows.

[0050] In some embodiments, the forming the pattern of the adhesive layer comprises using a mask. In some embodiments the mask is configured to selectively add the adhesive on the substrate. In some embodiments, forming the pattern of the adhesive layer comprises at least one of a group of additive methods comprising screen printing, porous printing and printing by dispensing. In some embodiments, the forming the pattern of the adhesive layer comprises providing a homogeneous layer of the adhesive on the substrate and removing selected portions of the adhesive layer from the substrate by using a mask to selectively subtract or otherwise remove adhesive from the homogenous layer of the adhesive on the substrate.

[0051] In some embodiments printing by dispensing comprises inkjet printing. In some embodiments the pattern comprises at least one dot of adhesive. For example, at least one droplet 262a, 262b, 262c of adhesive, as schematically indicated in the example illustrated in FIG 2i, can thus be selectively provided on the substrate. In some embodiments the at least one droplet 262a, 262b, 262c of6700171.00003 adhesive is exclusively provided on the base contact layer 220. In some embodiments the at least one droplet 262a, 262b, 262c of adhesive covers an incomplete portion of the exposed portion of the base contact layer 220 in the window provided in the insulation layer 230. In some embodiments, one dot of the adhesive is formed per window 232a, 232b, 232c. In some embodiments, a plurality of dots per window 232a, 232b, 232c are formed on the base contact layer 220.

[0052] At S155, the exemplary method further comprises setting a support structure onto the substrate. In some embodiments, the setting the support structure onto the substrate comprises setting at least one support element of the support structure onto the adhesive layer. At least one effect can be that the support structure can be fixed to the contact layer by adhesive of the adhesive layer. An exemplary method of providing the support structure including the at least one support element will be disclosed in detail below.

[0053] Meanwhile, in some embodiments, as shown in FIG 2J, setting the support structure onto the substrate comprises setting at least one support element 271a, 271 b, 271 c into the at least one window 232a, 232b, 232c above the base contact layer 220.

[0054] In some embodiments, setting the at least one support element 271 a, 271 b, 271c onto the substrate comprises providing a mounting that comprises at least one support element 271 a, 271 b, 271 c. In some embodiments the mounting is configured to hold the at least one support element 271a, 271 b, 271 c at an associated at least one holding location. In some embodiments the at least one support element 271 a, 271 b, 271 c is sufficiently long to protrude from the mounting. In some embodiments (not shown) the mounting comprises a holding adhesive layer configured to hold the support element in an associated support trough.6700171.00003

[0055] In some embodiments, as shown in the example of FIG 2 J, the setting the at least one support element comprises flipping the carrier sheet 210, with patches of adhesive 262a, 262b, 262c facing the mounting, onto the mounting.

[0056] In some embodiments, as in the example shown in FIG 2J and described in more detail below, a setting jig 1600 is provided as the mounting. The setting jig 1600 is configured to hold the at least one support element 271 a, 271 b, 271 c. In some embodiments the setting jig 1600 comprises a chuck, herein also referred to as a suction plate 1610. At least one effect can be that the suction plate 1610 can hold, via a corresponding at least one through-hole 1671a, 1671 b, 1671 c, the at least one support element 271 a, 271 b, 271 c in the trough of the mounting. In some embodiments, as illustrated in FIG 2J, the corresponding at least one trough-hole 1671 a, 1671 b, 1671 c is provided as a through-hole whose wall comprises a step configured for a filament shred as the support element 271 a, 271 b, 271 c set into the corresponding at least one through-hole 1671a, 1671 b, 1671 c to sit on the step.

[0057] The setting jig 1600 and the substrate 200 are configured to be moved relative to one another so that the support elements 271 a, 271 b, 271 c are set to corresponding patches of adhesive 262a, 262b, 262c. Thus, in some embodiments, the at least one support element 271 a, 271 b, 271 c is set onto the at least one droplet 262a, 262b, 262c of adhesive.

[0058] Some embodiments further comprise curing the adhesive in the adhesive layer.

[0059] Some embodiments further comprise separating the mounting from the at least one support element 271 a, 271 b, 271 c.

[0060] Now with reference to FIG 2K, with a plurality of disjoint support elements 271 a, 271 b, 271 c being set onto the substrate, the plurality of disjoint support elements 271a, 271 b, 271 c jointly form the support structure 270. In an alternative embodiment, an alternative support structure that is similar to the support structure described above is manufactured by means of soft lithography6700171.00003 and use of photoresist. At least one effect can be that a semi-finished product with the support structure 270 provides an enlarged deposition surface in a subsequent deposition step.

[0061] At S160, as shown in FIG 2L, in some embodiments, the method comprises depositing a front conductive layer (not shown in FIG 2L) above the substrate and, on the front conductive layer, an active layer 280. The front conductive layer can be provided as a conductive portion of the active layer 280. As, for example, described above with reference to FIG 4, the active layer can be provided as a typical solar cell stack. In some embodiments, the front conductive layer is deposited directly on the support structure 270; thereon the active layer 280 is deposited. In some embodiments, the method can comprise, upon depositing the front conductive layer, depositing first portions 281 a, 281 b, 281 c of the active layer 280, in particular, onto the front conductive layer on the at least one support element 271 a, 271 b, 271 c of the support structure and / or depositing second portions 282a, 282b, 282c of the active layer 280 onto the front conductive layer above the hard mask 259. At least one effect can be that the active layer 280 covers the at least one support element 271 a, 271 b, 271 c as well as the selected portions 256a, 256b, 256c of the hardened photoresist layer 250 as shown in the example illustrated in FIG 2L. At least one effect can be that a surface area of the active layer 280 is significantly larger than a surface area perpendicular to a normal on the substrate.

[0062] Some embodiments further comprise, at S165, removing the resist layer 250. In particular, the hard mask 259 is thus removed. At least one effect can be that portions 234a, 234b, 234c of the insulation layer 230 are exposed as shown in FIG 2M which is a diagram that illustrates a cross-sectional view of the exemplary semi-finished product. In some embodiments the removing the resist layer 250 comprises lifting the resist layer 250 off the insulation layer 230. At least one effect can be that the resist is removed. In some embodiments lifting the resist layer 250 off the insulation layer 230 comprises selectively removing the resist6700171.00003 layer 250. In some embodiments lifting the resist layer 250 off the insulation layer 230 comprises selectively etching the resist but not the active layer 280. In an alternative embodiment, the afore-described lift-off process uses a hardmask instead of photoresist. For example, the hardmask contains at least two hardmask layers that are stacked one over the other. These at least two hardmask layers can differ from one another with respect to their respective material composition. At least one effect can be to enable selective, isotropic etch process yielding in an undercut profile portion formed in the lower layer of these at least two layers stacked one over another. In still another embodiment, a removable hard mask is placed and adjusted on the stack illustrated in FIG 2E. Upon deposition to provide a structure similar to the above-described structure that is illustrated in FIG 2L, the removable hardmask can be removed and, upon cleaning, be reused.

[0063] Some embodiments, at S170, further comprise providing a rear contact layer 290 above the active layer 280 as shown in the example illustrated in FIG 2N. The rear contact layer 290 is configured to conduct charges. As discussed above with reference to the base contact layer 220, the rear contact layer 290 can comprise electrically conductive thin film oxides. The rear contact layer 290 can be essentially transparent to radiation in a frequency spectrum range that the electroactive device is configured to be electroactive.

[0064] At S175, in some embodiments, portions of the rear contact layer 290 above corresponding portions of the insulation layer 230, the rear contact layer is selectively removed whereby, as shown in FIG 20, a plurality of gaps 202a, 202b are obtained above the insulation layer 230. In some embodiments, selective removal is performed by directing a laser to portions of the rear contact layer 290 to be removed. In some embodiments, the rear contact layer is etched. At least one effect of selective removal of material from the rear contact layer 290 can be that a plurality of cells 201 a, 201 b, 201 c are formed on the carrier sheet 210 with rear contact layer portions 290a, 290b, 290c that are electrically separated from one another. Thereby, the plurality of cells 201 a, 201 b, 201 c are electrically distinct6700171.00003 from one another. In some embodiments, the plurality of cells 201 a, 201 b, 201c are coupled. In some embodiments, the plurality of cells 201 a, 201 b, 201 c are coupled in parallel. In some embodiments, a first plurality of cells are coupled in parallel and a second plurality of cells are coupled in parallel, and the first plurality of cells and the second plurality of cells are coupled in series. In some embodiments, a first plurality of cells are coupled in series and a second plurality of cells are coupled in series, and the first plurality of cells and the second plurality of cells are coupled in parallel.

[0065] At S199, using the semi-finished product, other steps can be performed towards completion of a solar module.

[0066] Now, an exemplary embodiment of an apparatus for use in manufacturing electroactive devices is disclosed. In particular, the apparatus is configured to manufacturing a support structure to support an active layer of the electroactive device. More particularly, the apparatus is configured to manufacture a support structure that comprises a plurality of support elements arranged in an array. In some embodiments, the apparatus is configured to provide the plurality of support elements on a substrate such as the substrate described above with reference to FIG 2i.

[0067] In some embodiments, the apparatus comprises at least one repository for molten glass. In some embodiments, the repository comprises a plurality of nozzles. In some embodiments, the repository comprises one or more nozzle bars wherein the plurality of nozzles are provided. In some embodiments, the repository is configured for extraction of a filament from the nozzle. In some embodiments, the nozzle bar is configured to extract a plurality of filaments from the plurality of nozzles provided in the nozzle bar.

[0068] In some embodiments, the apparatus is configured to size the filament upon extraction from the nozzle. In some embodiments, the apparatus comprises a plurality of roving coils. In some embodiments, the apparatus is configured to recoil weft filament on a roving coil. In some embodiments, the apparatus is6700171.00003 configured to recoil a plurality of warp filaments on a corresponding plurality of roving coils.

[0069] In some embodiments, the apparatus comprises a weft bobbin creel configured to be loaded with the weft filament roving coil. In some embodiments, the apparatus comprises a plurality of warp creels configured to be loaded with the plurality of warp filament roving coils.

[0070] In some embodiments, the apparatus is configured to weave the filament mesh. In some embodiments, the apparatus comprises a loom configured to form the filament mesh comprising weft and a plurality of warps. In some embodiments, the apparatus comprises a loom configured to weave a filament web. In some embodiments, the loom is configured to receive the weft from the weft filament roving coil and to receive the plurality of warp yarn filaments from the plurality of warp yarn filament roving coils. In some embodiments, the apparatus is configured to control the loom such that the filament mesh is woven according to the predetermined array layout. In some embodiments the apparatus is configured to form the filament mesh to achieve a congruence of a layout of the filament mesh with a predetermined array layout.

[0071] FIG 10 is a drawing that schematically illustrates a filament mesh 1000 according to some embodiments. In some embodiments, the filament mesh 1000 is woven. In some embodiments, the filament mesh 1000 comprises a plurality of warps 1071 and weft 1021. In some embodiments, the filament mesh 1000 is woven according to the predetermined array layout. In the example shown in FIG 10, the filament mesh 1000 comprises multiple dense mesh portions 1020 where the plurality of warps 1071 and the weft 1021 provide a dense mesh having a first mesh size in a range of, for example, from 100 pm to 1000 pm. Further, in the example, the filament mesh 1000 comprises wide mesh size portions 1070 that provide space between dense mesh portions 1020. In a wide mesh size portion 1070 a distance 1072 between nearest dense mesh portions 1020 can be, for example, in a range of from 2 mm to 200 mm. In some embodiments, the multiple6700171.00003 dense mesh portions 1020 have a width of at least 2 mm. At least one effect can be that the filament mesh 1000 forms a fabric that is sufficiently stable for use in a subsequent processing step.

[0072] In some embodiments, for example, a length of the filament mesh is in a range of from 100 mm to 10000 mm. In some embodiments, the length of the filament mesh is in a range of from 500 mm to 5000 mm. In some embodiments, the length of the filament mesh is in a range of from 1000 mm to 1500 mm.

[0073] In some embodiments, for example, a width of the filament mesh is in a range of from 100 mm to 5000 mm. In some embodiments, the width of the filament mesh is in a range of from 500 mm to 4000 mm. In some embodiments, the width of the filament mesh is in a range of from 2000 mm to 3000 mm.

[0074] In some embodiments, for example, a distance between adjacent parallel filaments of weft 1021 is in a range of from 0,1 mm to 1 mm; in some embodiments, the distance between adjacent parallel filaments of weft 1021 is in a range of from 0,4 mm to 0,8 mm. For example, a cross-sectional diameter of the weft 1021 is in a range of from 0,01 mm to 1 mm. In some embodiments, the cross- sectional diameter of the weft 1021 is in a range of from 0,08 mm to 0,2 mm.

[0075] In some embodiments, for example, a distance between adjacent parallel ones of the plurality of warps 1071 is in a range of from 0,1 mm to 1 mm; in some embodiments, the distance between adjacent parallel ones of the plurality of warps 1071 is in a range of from 0,4 mm to 0,8 mm. A cross-sectional diameter of the weft 1021 can be in a range of from 90 pm to 1.000 pm. In some embodiments, the cross-sectional diameter of the weft 1021 is in a range of from 50 pm to 300 pm. In some embodiments, the cross-sectional diameter of the weft 1021 is in a range of from 90 pm to 100 pm. In some embodiments, the cross- sectional diameter of the weft 1021 is about 95 pm.

[0076] It should be understood that also any combination of the above-stated exemplary specifications of the filament mesh can be implemented. While the filament mesh described above is manufactured from glass fiber, other material6700171.00003 can also be contemplated for use in the fiber as long as support structure elements made from the fiber with that material sufficiently withstand high temperature and other harsh conditions of further process steps to be undergone by the substrate upon being provided with the support structure. For example, a filament mesh according to a combination of specifications and / or comprising material described above with respect to filament mesh can be used in a sensor device.

[0077] For example, filament material can comprise metal such as copper, aluminum and palladium. The filament can be coated. In some embodiments, the filament is coated with metal. In some embodiments, the filament is coated with an insulation layer. For example, a metal filament wire can be insulation-coated. At least one effect can be that a three-dimensional thin-film transistor configuration is provided. The configuration can be implemented, for example, in a sensor.

[0078] According to the invention in one aspect, an apparatus for use in manufacturing electroactive devices comprises a cutting jig configured to support a filament mesh while being cut, whereby a plurality of filament shreds are aligned with a predetermined array layout, a setting jig configured to receive a plurality of filament shreds, and a control system configured to control motion of the setting jig relative to a substrate to enable transfer of the plurality of filament shreds to the substrate.

[0079] In some embodiments, as will be disclosed further below in more detail and with reference to drawings, the apparatus comprises one or more of a cutting jig, a recumbent transport jig, an alignment jig, an upright transport jig, and a setting jig. A surface on one side of the respective jig, herein referred to as near side, is essentially planar. The essentially planar surface on the near side, however, comprises an array of receptacles configured to receive a corresponding plurality of filament shreds. The array of receptacles each comprises a through- hole that is configured to establish a communication of pressure between the near side of the jig and a far side of the jig with an opposite surface of the jig that is opposite to the essentially planar surface on the near side.6700171.00003

[0080] In some embodiments, the apparatus comprises a control system that is configured to control one or more drive units configured to drive an associated component of the apparatus that is coupled to the one or more drive units, and a control unit configured to control motion of the associated component. In some embodiments, the control system comprises one or more drive units that are configured to move the cutting jig, the recumbent transport jig, the alignment jig, the upright transport jig, and / or the setting jig relative to one another to enable an orderly transfer of a plurality of filament shreds from one jig to another. In some embodiments, the control system is configured to apply a pressure difference between a near side and a far side of the respective jig to hold filament shreds to the respective jig and / or release, globally or selectively, some or all of the plurality of filament shreds from the respective jig as will be explained in more detail below. In some embodiments, the control system is configured to form the filament mesh in accordance the predetermined array layout. In some embodiments the control system is configured to form the filament mesh to achieve a congruence of a layout comprising the filament shreds with the predetermined array layout.

[0081] In some embodiments, the apparatus comprises a cutting device configured to sever weft of the filament mesh from the filament mesh to obtain the plurality of filament shreds. In some embodiments, the cutting device is configured to cut the filament mesh at least on one side of the dense mesh portion. At least one effect can be that the plurality of filament shreds are produced. At least one effect can be that, upon severing the weft from the filament mesh, the plurality of filament shreds are aligned with the predetermined array layout.

[0082] In some embodiments, the jig comprises a suction plate provided with an array of receptacles configured each to receive one filament shred. In some embodiments, receptacles of the array of receptacles comprise each one through- hole that penetrates the suction plate. In some embodiments, as illustrated for example in FIG 2 J, the wall of each through-hole comprises a step configured to support a filament shred set into the through-hole. In some embodiments, the6700171.00003 apparatus is configured to provide a negative pressure gradient between a first pressure on a near side of the suction plate to face or hold the plurality of filament shreds and a second pressure on a far side of the suction plate. At least one effect can be that the plurality of filament shreds are respectively attracted to a corresponding one of the array of holes.

[0083] In some embodiments, holes of the array of holes are cylindrical. In other embodiments, holes of the array of holes widen towards a surface on the near side of the suction plate. In some embodiments, the control system is configured to control a position of the jig relative to the plurality of filament shreds such that free ends of the plurality of filament shreds, upon attraction to the suction plate, rest inside the holes.

[0084] In some embodiments, the control system is configured to align the plurality of filament shreds with a predetermined direction with respect to the suction plate.

[0085] In some embodiments, a surface of the suction plate is essentially planar, and wherein the predetermined direction with respect to the suction plate is perpendicular to the surface of the suction plate.

[0086] In some embodiments, the apparatus is configured to charge the suction plate electro-statically. At least one effect can be that the electro-static charge is carried to the plurality of filament shreds seated in the holes of the suction plate, whereby the charge provides for an upright alignment of the plurality of filament shreds.

[0087] In some embodiments, the apparatus is configured to control a position of the jig relative to the substrate to align the plurality of filament shreds with an array of target positions on the substrate. In some embodiments, the apparatus is configured to set the plurality of filament shreds onto the substrate, whereby a free end of the plurality of filament shreds contacts the substrate at the array of target positions.6700171.00003

[0088] In some embodiments, the apparatus is configured to reduce the pressure gradient between the first pressure and the second pressure to release the plurality of filament shreds from the suction plate.

[0089] In some embodiments, the apparatus comprises a cutting jig configured to back a filament mesh and / or hold filament shreds in place while the filament mesh is cut up. In some embodiments the apparatus is configured to spread the filament mesh 1000 on the cutting jig.

[0090] FIGS 12A to 12G are drawings that illustrate an apparatus according to some embodiments. FIG 12A is a top view of a cutting jig 1200. FIG 12B is a cross- sectional view of the cutting jig 1200 along a cross-section indicated in FIG 12A by a broken line B-B. FIG 12C is a cross-sectional view of the cutting jig 1200 along a cross-section indicated in FIG 12A by a broken line C-C. FIG 12D is a cross- sectional view of the cutting jig 1200 along a cross-section indicated in FIG 12A by a broken line D-D. In some embodiments, the cutting jig 1200 comprises a suction plate 1210 that comprises a non-planar surface moulded to provide a plurality of mould portions 1240 spaced apart by elevated portions 1270. In some embodiments, the elevated portions 1270 comprise one or more guide channels 1272 formed as trenches in a top surface 1275 of the elevated portion 1270. A floor of the one or more guide channels lies in a cut-stop plane 1250.

[0091] In some embodiments (not shown), the cutting jig has an essentially planar surface. In some embodiments, the cutting jig is structured in correspondence with the predetermined array layout. In some embodiments, the apparatus comprises adhesive means to keep the filament mesh spread out on the cutting jig. In some embodiments, the adhesive means is fluid dispenser configured to dispense a fluid over a surface of the cutting jig. In some embodiments, the adhesive means is an electrostatic charging device configured to impart electric charge to one or both of the filament mesh and the cutting jig. At least one effect can be that an electric potential difference can be build between the filament mesh and the cutting jig to obtain an attractive electric field between6700171.00003 the filament mesh and the cutting jig that causes the filament mesh to electrostatically stick to the cutting jig. In some embodiments, the cutting jig is configured to apply the Bernoulli effect to hold the filament mesh in place on the cutting jig.

[0092] The apparatus is configured to receive the filament mesh 1000 to be cut, for example, as shown in FIGS 12E and 12F. In particular, the top surface 1275 of the elevated portions 1270 is configured to receive the warp 1071 (not shown in FIGS 12A to 12D). For example, the cutting jig 1200 can be configured hold warp 1071 of the wide mesh size portions 1070 of the filament mesh 1000 in the guide channels 1272 that are formed in the elevated portion 1270 of the cutting jig suction plate 1210, In some embodiments, the cutting jig 1200 comprises one or more through-holes 1271 that penetrate the cutting jig 1200 from a back face of the cutting jig 1200 to the top face of the elevated portion 1270. In some embodiments, the apparatus is configured to apply a pressure differential to the cutting jig 1200 wherein a back face pressure on a suction plate far side 1220 is lower than a top face pressure on a suction plate near side 1230, i.e. , at the top surface 1275 of the cutting jig suction plate 1210. At least one effect can be that filament shreds (not shown in FIGS 12A to 12D) disposed on the top surface 1275 are held in place on the cutting jig 1200 above openings to the through-holes 1271 in the guide channels 1272 that communicate with the low pressure on the back face side.

[0093] In some embodiments, the apparatus comprises a cutting device (not shown) configured to cut the filament mesh 1000. In some embodiments, the cutting device is configured to cut the warp 1020 of the filament mesh 1000 to obtain a plurality of filament shreds 1171 , essentially arranged in an array, that are severed from the weft 1021. In some embodiments, the cutting device comprises a knife configured to perform cuts in the mould section 1240, for example, as indicated by arrows 1251 in FIG 12F. Other cutting means such as laser can also be contemplated. In some embodiments, the cutting device is configured to stop a blade motion relative to the cutting jig 1200 essentially at the cut-stop plane 12506700171.00003 short of contact with a surface of the cutting jig 1200. At least one effect can be that the filament mesh 1000 disposed on the cutting jig 1200 can be cut while avoiding unnecessary blunting of the blade.

[0094] In some embodiments, the cutting device is configured to perform multiple cuts of the filament mesh 1000 in a space between two weft 1021 .

[0095] In some embodiments, the apparatus is configured to remove the dense mesh portion 1020 from the cut-up filament mesh 1000 to leave an array 1100 of filament shreds 1171 in place on the cutting jig 1200. FIG 11 is a drawing that schematically illustrates an array 1100 of filament shreds 1171 according to some embodiments. In some embodiments, the array 1100 of filament shreds 1171 is arranged according to the predetermined array layout. For example, the apparatus can be configured to leave filament shreds 1171 on elevated portions 1270 of the non-planar surface of the cutting jig 1200 (the filament shreds are not shown in FIGS 12A to 12D). In some embodiments, the apparatus is configured to hold filament shreds 1171 cut from the filament mesh 1000 on the elevated portions 1270 of the cutting jig 1200. At least one effect can be that warp 1071 can be kept in the guide channels 1272 while filament of the dense mesh portion 1020 of the filament mesh 1000 cut in the mould portion 1240 of the cutting jig 1200 is removed from the mould portion 1240 of the cutting jig 1200.

[0096] In some embodiments, the apparatus is configured to pick up the plurality of filament shreds 1171 from the cutting jig 1200. Reference will now be made to FIGS 13A to 13C which are drawings that illustrate an apparatus according to some embodiments. FIG 13A is a top view that illustrates a recumbent transport jig 1300. FIG 13B is a cross-sectional view along a cross-section of the recumbent transport jig 1300 indicated in FIG 13A by a broken line B-B. FIG 13C is a cross-sectional view of the recumbent transport jig 1300 along a cross-section indicated in FIG 13A by a broken line C-C.

[0097] In some embodiments, the apparatus is configured to set the plurality of filament shreds 1171 to the recumbent transport jig 1300. In some embodiments,6700171.00003 the recumbent transport jig 1300 comprises a suction plate 1310 provided with an array of grooves 1372. In some embodiments, the grooves 1372 are formed in an essentially planar plateau 1340 of a near side surface 1330 on a near side that is to face the plurality of filament shreds 1171 for pick up. The grooves 1372 can be provided with a plurality of through-holes 1371. In some embodiments, the plurality of through-holes 1371 widen towards a far side 1320 of the suction plate 1310 which is opposite to the near side 1330. In some embodiments, the apparatus is configured to provide a negative pressure gradient between a near side pressure on the near side 1330 of the suction plate 1310 that is to face the plurality of filament shreds 1171 and the far side pressure on a far side 1320 of the suction plate 1310. In some embodiments, the apparatus is configured to provide the far side pressure lower than a reference pressure, while providing the near side pressure higher than the reference pressure. For example, the reference pressure can be selected to be the atmospheric pressure. At least one effect can be that a discharge of the filaments from the apparatus can be facilitated. In some embodiments, the apparatus is configured to control a position of the recumbent transport jig 1300 relative to the plurality of filament shreds 1171 held on the cutting jig 1200 such that the plurality of filament shreds 1171 , upon attraction to the suction plate 1310, come to rest inside the grooves 1372.

[0098] In some embodiments (not shown), the suction plate is configured to be electrostatically charged. At least one effect can be that charge on the suction plate can be controlled to hold filament shreds and / or release filament from the suction plate 1310. In some embodiments, as described above with reference to an example illustrated in FIG 2J, the apparatus is configured to set the recumbent transport jig 1300 to the substrate.

[0099] In some embodiments, the exemplary apparatus is configured to align the plurality of filament shreds with a predetermined direction. Reference will now be made to FIGS 14A to 14C which are drawings that illustrate an apparatus according to some embodiments. FIG 14A is a top view that illustrates an6700171.00003 alignment jig 1400. FIG 14B is a cross-sectional view along a cross-section of the alignment jig 1400 indicated in FIG 14A by a broken line B-B. FIG 14C is a cross- sectional view of the alignment jig 1400 along a cross-section indicated in FIG 14A by a broken line C-C.

[0100] In some embodiments, the apparatus is configured to adjust the plurality of filament shreds on the alignment jig 1400 in a predetermined direction. In some embodiments, the predetermined direction with respect to the alignment jig 1400 is perpendicular to an essentially planar surface 1420 of an alignment plate. In some embodiments, as shown in the example illustrated in FIGS 14A to 14C, the alignment jig 1400 comprises a suction plate 1410 that is configured to acts as the alignment plate. In particular, the suction plate 1410 of the alignment jig 1400 comprises an essentially planar surface 1420.

[0101] In some embodiments, the suction plate 1410 comprises a plurality of alignment trenches 1472 that are formed in the surface 1420 of the suction plate 1410 and that are each associated with a corresponding through-hole 1471. In some embodiments, a floor of the alignment trenches 1472 is inclined towards the corresponding through-hole 1471. In some embodiments, the floor of the alignment trenches 1472 is provided as a stairway that descends towards the through-hole 1471. In some embodiments, a slope is constant. In some embodiments, the floor of the alignment trenches 1472 has a convex curvature of increasing steepness towards the through-hole 1471. At least one effect can be that a filament shred 1171 received in an alignment trench 1472 aligns itself in accordance with the inclined floor of the alignment trench 1472, whereby a free end of the filament shred 1171 can slip inside the through-hole 1471.

[0102] In some embodiments, a control of the apparatus is configured to apply a lower pressure at the far side 1420 of the alignment jig suction plate 1410 than at the near side 1430 of the suction plate 1410. At least one effect can be that the filament shred 1171 disposed in the alignment trench 1472 is pulled towards the through-hole 1471 and aligns itself with an axis of the through-hole 1471. Thus, an6700171.00003 alignment of the filament shreds 1171 in an upright direction that, in some embodiments, is essentially perpendicular to the surface 1440 of the alignment jig suction plate 1410 can be obtained.

[0103] In some embodiments, the exemplary apparatus is configured to set the plurality of filament shreds into an upright transport jig. Reference will now be made to FIGS 15A to 15C which are drawings that illustrate an apparatus according to some embodiments. FIG 15A is a top view that illustrates an upright transport jig 1500. FIG 15B is a cross-sectional view along a cross-section of the upright transport jig 1500 indicated in FIG 15A by a broken line B-B. FIG 15C is a cross- sectional view of the upright transport jig 1500 along a cross-section indicated in FIG 15A by a broken line C-C.

[0104] Now with reference to FIGS 15A to 15C, in some embodiments, the apparatus is configured to set the plurality of filament shreds held on the upright transport jig 1500 to a setting jig 1600. In some embodiments, as shown in the example illustrated in FIGS 15A to 15C, the upright transport jig 1500 comprises a suction plate 1510 that comprises a planar surface 1520 (with a plane being indicated in FIG 15C by a broken line). In some embodiments, the suction plate 1510 comprises a plurality of through-holes 1571.

[0105] In some embodiments, a control of the apparatus is configured to apply a lower pressure at a far side 1520 of the upright transport jig suction plate 1510 than at a near side 1530 of the suction plate 1510. At least one effect can be that a filament shred disposed in the through-hole 1571 is held in the through-hole 1571. Thus, a plurality of filament shreds held in a corresponding plurality of through-holes 1571 can be set to a setting jig 1600.

[0106] In some embodiments, the apparatus is configured to control a position of the upright transport jig 1500 relative to the setting jig 1600 to align the plurality of filament shreds with selected ones of an array of target through-holes of the setting jig 1600. In some embodiments, the apparatus is configured to plunge the plurality of filament shreds into the setting jig 1600, whereby a far end of the6700171.00003 plurality of filament shreds penetrates a corresponding one of the array of target through-holes.

[0107] In some embodiments, the apparatus is configured to reduce the pressure gradient between the low pressure on the far side 1520 of the suction plate 1510 and the pressure on the near side 1530 of the suction plate 1510. In some embodiments, the apparatus is configured to reverse the pressure gradient, to release the plurality of filament shreds from the suction plate 1510.

[0108] In some embodiments, the exemplary apparatus is configured to set the plurality of filament shreds to a substrate. Reference will now be made to FIGS 16A to 16C which are drawings that illustrate an apparatus according to some embodiments. FIG 16A is a top view that illustrates a setting jig 1600. FIG 15B is a cross-sectional view along a cross-section of the setting jig 1600 indicated in FIG 16A by a broken line B-B. FIG 16C is a cross-sectional view of the setting jig 1600 along a cross-section indicated in FIG 16A by a broken line C-C.

[0109] Now with reference to FIGS 16A to 16C, in some embodiments, the apparatus is configured to set the plurality of filament shreds held on the setting jig 1600 to a substrate. In some embodiments, the setting jig 1600 comprises a suction plate 1610 that comprises an essentially planar surface 1640. In some embodiments, the setting jig suction plate 1610 comprises a plurality of through- holes 1671.

[0110] In some embodiments, a control of the apparatus is configured to apply a lower pressure at a far side 1620 of the setting jig suction plate 1610 than at a near side 1630 of the suction plate 1610. At least one effect can be that a filament shred disposed in the through-hole 1671 is held in the through-hole 1671. Thus, a plurality of filament shreds held in a corresponding plurality of through-holes 1671 can be set to a substrate.

[0111] In some embodiments, the apparatus is configured to control a position of the setting jig 1600 relative to the substrate to align the plurality of filament shreds with an array of target positions on the substrate. In some embodiments,6700171.00003 the apparatus is configured to set the plurality of filament shreds onto the substrate, whereby a free end of the plurality of filament shreds contacts the substrate at the array of target positions. At least one effect can be that a far end of the filament shreds is plunged into the adhesive on the substrate.

[0112] In some embodiments, the apparatus is configured to reduce the pressure gradient between the low pressure on the far side 1620 of the suction plate 1610 and the pressure on the near side 1630 of the suction plate 1610. In some embodiments, the apparatus is configured to reverse the pressure gradient, to release the plurality of filament shreds from the suction plate 1610.

[0113] A method of providing, according to the invention in one aspect, a support structure in an electroactive device is now disclosed. More particularly, a method of preparing a plurality of support elements for being set onto the substrate in some embodiments according to the invention in an aspect is disclosed. First, embodiments of the method will generally be described.

[0114] The method comprises providing a filament mesh. In some embodiments, the method comprises weaving the filament mesh. In some embodiments, the method comprises forming the filament mesh comprising weft and a plurality of warps. In some embodiments, the filament mesh comprises fiber yarn such as glass fiber. In some embodiments the filament mesh is wide-meshed. In some embodiments a distance between consecutive wefts is wide. At least one effect can be that a portion of warp filament between the consecutive wefts is sufficiently long to allow for at least one support element to be obtained from the warp filament. In some embodiments the filament mesh is provided as a square set. In some embodiments, the method comprises controlling the forming of the filament mesh in accordance with a predetermined array layout. In some embodiments the filament mesh is formed to achieve a congruence of a layout comprising the filament shreds with the predetermined array layout. At least one effect can be that, upon severing the weft from the filament mesh, the plurality of filament shreds are aligned with the predetermined array layout.6700171.00003

[0115] In some embodiments, the method comprises severing the weft from the mesh. In some embodiments, the severing comprises cutting the mesh. In some embodiments, the severing the weft from the mesh comprises cutting the filament mesh at least on one side of a weft. At least one effect can be that a plurality of filament shreds are obtained. Some embodiments comprise cutting warps of the filament mesh close to a weft of the filament mesh. At least one effect can be that the plurality of filament shreds are obtained from the warps. In some embodiments, the plurality of filament shreds form a plurality of rods. In some embodiments, the method comprises cutting the plurality of filament shreds each into a plurality of rods. In some embodiments, the warp filament has an essentially circular crosssection such that the filament shreds cut from the warp filament and therefore also the rods cut from the filament shreds are cylindrical. In some embodiments, the rods are used in subsequent process steps described above with reference to FIG 2K as the support elements 272a, 272b, 272c. In some embodiments, the support elements comprise the rods.

[0116] In some embodiments, the method comprises attracting filament shreds to a jig. In some embodiments, wherein the jig comprises a suction plate provided with an array of holes, the method comprises providing a negative pressure gradient between a first pressure on a near side of the suction plate that is to face the plurality of filament shreds and a second pressure on a far side of the suction plate, whereby the plurality of filament shreds are respectively attracted to a corresponding one of the array of holes in the suction plate. In some embodiments, the method comprises aligning the plurality of filament shreds with a predetermined direction with respect to the suction plate. In some embodiments, wherein the surface of the suction plate is essentially planar, the predetermined direction with respect to the suction plate is perpendicular to the surface of the suction plate. In some embodiments (not shown), aligning the plurality of filament shreds comprises charging the suction plate electrostatically.6700171.00003

[0117] In some embodiments, wherein the array of holes in the suction plate widen towards a surface on the far side of the suction plate, the method comprises controlling a position of the jig relative to the plurality of filament shreds such that free ends of the plurality of filament shreds, upon attraction to the suction plate, rest inside the holes.

[0118] In some embodiments, the method comprises setting the jig to a substrate. In some embodiments, setting the jig to the substrate comprises controlling a position of the jig relative to the substrate to align the plurality of filament shreds with an array of target positions on the substrate. In some embodiments setting the jig to the substrate comprises setting the plurality of filament shreds onto the substrate, whereby a free end of the plurality of filament shreds contacts the substrate at the array of target positions. In some embodiments, the method comprises increasing the low pressure to release the plurality of filament shreds from the suction plate.

[0119] While the method described above is disclosed to use one jig only, in some embodiments, a plurality of jigs is used consecutively wherein each jig of the plurality of jigs is configured differently to perform an associated act or step of the method disclosed herein. In some embodiments, accordingly, the method comprises one or more transfer of the plurality of filament shreds from one jig to another. In some embodiments, the method comprises moving a first jig holding the plurality of filament shreds face to face to a second jig to receive the plurality of filament shreds from the first jig. In some embodiments, the method comprises increasing a first pressure on a far side of the first jig relative to a second pressure on a far side of the second jig. At least one effect can be that the plurality of filament shreds are released from the first jig and pulled over to be held by the second jig. In some embodiments, the method comprises aligning the first jig and the second jig such that a plurality of receptacles formed in a near side surface of the first jig face a plurality of associated receptacles formed in a near side surface of the second jig.6700171.00003

[0120] Now, an exemplary embodiment of a method for use in manufacturing an electroactive cell is disclosed with reference to FIGS 9A and 9B that show a flow diagram to illustrate steps of an exemplary method 900 in an embodiment according to an aspect of the invention, wherein the exemplary method 900 is used to manufacture a plurality of support elements arranged in an array. Thereby, the method can provide, for example, the plurality of support elements on the substrate described above. In some embodiments, the plurality of support elements is prepared for being set onto the substrate in a same coordinated process step. At least one effect can be that the plurality of support elements is set onto the substrate orderly and essentially simultaneously.

[0121] An exemplary method of providing support elements for use in a manufacturing an electroactive cell comprises forming a filament mesh. At least one effect can be that the filament mesh can be formed in accordance with a predetermined array layout. In some embodiments, forming the filament mesh comprising weft and a plurality of warps.

[0122] In a first step, at S910, molten glass is provided in a repository. In some embodiments, the repository comprises a plurality of nozzles. In some embodiment, the repository comprises one or more nozzle bars wherein the plurality of nozzles are formed. In the exemplary process illustrated in FIGS 9A and 9B, at least two lines of process are used, wherein, at S910a, molten glass is provided in a first repository for extraction of yarn filament, and, at S910b, molten glass is provided in a second repository for extraction of warp filament.

[0123] At S915, a filament is extracted from a nozzle of the repository. In some embodiments, a plurality of filaments are simultaneously extracted from the plurality of nozzles that are, for example, provided in the bar. For example, a glass fiber or fibers can thus be extracted from molten glass. In other embodiments, filaments are manufactured from polymer, for example, by extrusion. Polymer raw materials can be pure, blended with or incorporate, e.g. oxide, ceramic compounds and / or composite. Non-exhaustive examples are fluor-polymers, polyacrylate,6700171.00003 polycarbonate, polyamide, polyhydroxyalkanoate, polybutylene-adipate- terephthalate, polyethylene, polyurethane, polypropylene, polybutylene-succinate, epoxy resins blended with or incorporate e.g. oxide, ceramic compounds. At least one effect of polymer section can be to use a polymer for the filament that has neglectable wear-out under UV-light exposure, stability in a wide range of temperatures, e.g., from -40°C to +200°C, and / or longevity larger than 20 years. In some embodiments, the polymer filament material is a composite that contains lignin and / or nanocellulose and / or other stiffening or hydrophobic material to increase stiffness and / or hydrophobicity.

[0124] In the exemplary process illustrated in FIGS 9A and 9B, at least two lines of process are used to extract or extrude, at steps S915a, a weft filament from a nozzle, and, at step S915b, a plurality of warp filaments from a nozzle bar. In some embodiments, steps S915a and S915b, the extraction of the weft filament and the extraction of the plurality of warp filaments are performed simultaneously.

[0125] Upon extraction, at S920a, the weft filament is sized. Upon extraction, at S920b, the plurality of warp filaments are sized. In some embodiments, steps S920a and S920b, sizing the weft filament and sizing the plurality of warp filaments, are performed simultaneously.

[0126] Next, at S925a, the weft filament is recoiled on a roving coil. At S925b, the plurality of warp filaments are recoiled on corresponding roving coils. In some embodiments, steps S925a and S925b, recoiling the weft filament and recoiling the plurality of warp filaments, are performed simultaneously.

[0127] At S930a, a weft bobbin creel is loaded with the weft filament roving coil. At S930b, a plurality of warp creels is loaded with the plurality of warp filament roving coils. In some embodiments, steps S930a and S930b, loading the weft bobbin creel and loading the plurality of warp filament roving coils, are performed simultaneously.

[0128] Next, at S941 , the weft is fed to a loom, while, at S942, a warp is fed to the loom.6700171.00003

[0129] At S950, the loom is used to weave the weft and the warp to obtain a filament mesh. In some embodiments, weaving the filament mesh comprises controlling the loom such that the filament mesh is woven according to the predetermined array layout. In some embodiments the array layout and / or the filament mesh has some or all dimensions, width of the filament mesh, length of the filament mesh, distance between adjacent parallel warps, distance between adjacent parallel weft, as stated above. In some embodiments the filament mesh is formed to achieve a congruence of a layout of the filament mesh with the predetermined array layout.

[0130] Now with reference to FIGS 12E to 12G, some embodiments of the method comprise spreading of the filament mesh on a cutting jig 1200. In some embodiments, the cutting jig 1200 is essentially planar. The filament mesh can be held firmly to the suction plate 1210 of the cutting jig 1200. In some embodiments, a near side pressure on a near side 1230 of the cutting jig suction plate 1210 is kept above a far side pressure on a far side 1220 of the cutting jig suction plate 1210. A pressure difference can be communicated via the through-holes 1271 , At least one effect can be that the warp 1071 is suck to the openings of the through- holes in the guide channels 1272 of the elevated portions 1275 of the suction plate 1210.

[0131] At S955, the filament mesh is cut, whereby, particularly, the warp 1071 is cut to obtain a plurality of filament shreds 1171 , essentially arranged in an array, that are severed from the weft 1021 . In some embodiments, the cutting comprises a knife perform cuts in the mould section 1240 of the cutting jig 1200, for example, as indicated by arrows 1251 in FIG 12F. In some embodiments, severing the filament shreds 1171 from the filament mesh comprises cutting the filament mesh at least on one side of a dense mesh portion 1020 of the filament mesh. In some embodiments, cutting the filament mesh comprises multiple cuts in a space between two adjacent dense mesh portions 1020. In some embodiments, cutting the filament mesh comprises cuts on both sides of a dense mesh portion 1020. At6700171.00003 least one effect can be that, upon severing the dense mesh portions 1020 from the filament mesh, a plurality of filament shreds 1121 are obtained in alignment with the predetermined array layout.

[0132] At S960, the dense mesh portion 1020 of the filament mesh that comprises the weft 1021 is removed from the cut-up filament mesh to leave an array 1100 of filament shreds 1171 in place. FIG 11 illustrates the array 1100 of filament shreds according to some embodiments. In some embodiments, as illustrated in FIG 12G, the filament shreds 1171 can be pressed against the through-holes 1272 in the guide channel of the elevated portion 1250 of the sucking plate 1210.

[0133] FIGS 17A and 17B are drawings that illustrate use of the apparatus illustrated in FIGS 12A to 13C according to some embodiments. Now with reference to FIGS 17A and 17B, some embodiments of the exemplary method comprise attracting filament shreds of the plurality of warps from the cutting jig 1200 to the recumbent transport jig 1300.

[0134] As described above with reference to FIGS 13A, 13B and 13C, in some embodiments, the recumbent transport jig 1300 comprises a suction plate 1310 provided with an array of through-holes 1371 . In some embodiments, the through- holes 1371 widen towards a surface on a far side 1320 of the suction plate 1310 opposite to a near side 1330 of the suction plate 1310 that faces the plurality of filament shreds. In some embodiments, the method comprises providing a negative pressure gradient between a near side pressure on the near side 1330 of the suction plate 1310 and a far side pressure on the far side 1320 of the suction plate 1310. In some embodiments, the method comprises, while providing the negative pressure gradient between the near side pressure on the near side 1330 of the recumbent transport jig suction plate 1310 and the far side pressure on the far side 1320 of the recumbent transport jig suction plate 1310, releasing the pressure difference between the near side pressure on the near side 1230 of the cutting jig suction plate 1210 and the far side pressure on the far side 1220 of the6700171.00003 cutting jig suction plate 1210. In some embodiments, the pressure on the near side 1230 of the cutting jig suction plate 1210 and the pressure on the far side 1220 of the cutting jig suction plate 1210 are released to be essentially equal to the pressure on the near side 1330 of the recumbent transport jig suction plate 1310. At least one effect can be that at least some, if not all, of the plurality of filament shreds are respectively released from the cutting jig suction plate 1210 and attracted, as indicated in FIG 17 A by an arrow 1751 , to a corresponding one of the array of through-holes 1371 in the recumbent transport jig suction plate 1310. Some embodiments of the method further comprise controlling a position of the recumbent transport jig 1300 relative to the plurality of filament shreds such that free ends of the plurality of filament shreds, upon attraction to the suction plate, rest inside the grooves 1372. It should be understood that in FIG 17A a distance of the recumbent transport jig 1300 to the cutting jig 1200 is shown overblown to better illustrate steps of the method as described above. The method can comprise controlling of a distance between the near side 1320 of the recumbent transport jig suction plate 1310 to the near side 1220 of the cutting jig suction plate 1210, as illustrated for example in FIG 17B, such that the recumbent transport jig suction plate 1310 and the cutting jig suction plate 1210 engage each other, as illustrated for example in FIG 17A. At least one effect can be that waste in transfer of the filament shreds 1171 from the cutting jig 1200 to the recumbent transport jig 1300 is reduced.

[0135] At S965, the plurality of filament shreds 1171 are picked up. Thus, in some embodiments, the plurality of filament shreds 1171 are transferred from the cutting jig 1200 to the recumbent transport jig 1300, as illustrated for example in FIG 17B, where filament shreds 1171 are shown to be attached to the recumbent transport jig suction plate 1310 as a result of a sucking action provided by low pressure in the through-holes 1371 . The recumbent transport jig 1300 is lifted away from the cutting jig 1200 as illustrated in FIG 17B and indicated by arrows 1751. In some embodiments (not shown), the cutting jig is also used as the recumbent6700171.00003 transport jig, i.e. , for the purpose of a next step in the method as detailed below the plurality of filament shreds arranged in the array layout on the cutting jig stay in situ, whereby, from a functional point of view, the plurality of filament shreds are now held on the recumbent transport jig.

[0136] FIGS 18A to 18C are drawings that illustrate use of the apparatus illustrated in FIGS 13A to 14C according to some embodiments. Now with reference to FIGS 18A to 18C, some embodiments of the exemplary method comprise transfer of filament shreds 1171 from the recumbent transport jig 1300 to the alignment jig 1400.

[0137] In some embodiments, as described above with reference to FIGS 14A, 14B and 14C, the alignment jig 1400 comprises a suction plate 1410 provided with an array of through-holes 1471. In some embodiments, the through-holes 1471 widen towards a surface on a far side 1420 of the suction plate 1410 opposite to a near side 1430 of the suction plate 1410 that faces the plurality of filament shreds. In some embodiments, the method comprises providing a negative pressure gradient between a near side pressure on the near side 1430 of the suction plate 1410 and a far side pressure on the far side 1420 of the suction plate 1410. In some embodiments, the method comprises, while providing the negative pressure gradient between the near side pressure on the near side 1430 of the alignment jig suction plate 1410 and the far side pressure on the far side 1420 of the alignment jig suction plate 1410, releasing the pressure difference between the near side pressure on a near side 1330 of the recumbent transport jig suction plate 1310 and the far side pressure on the far side 1320 of the recumbent transport jig suction plate 1310. In some embodiments, the pressure on the near side 1330 of the recumbent transport jig suction plate 1310 and the pressure on the far side 1320 of the recumbent transport jig suction plate 1310 are released to be essentially equal to the pressure on the near side 1430 of the alignment jig suction plate 1410. At least one effect can be that the plurality of filament shreds 1171 are respectively attracted in a direction indicated in FIG 18A by an arrow 1851 to a6700171.00003 corresponding one of the array of through-holes 1471 in the suction plate 1410 of the alignment jig 1400. In some embodiments, one filament shred 1171 is attracted to one through-hole 1471 , respectively. Accordingly, the plurality of filament shreds 1171 are released from the grooves 1372 in the pickup jig suction plate 1310 and move to rest in corresponding alignment trenches 1472 in the alignment jig suction plate 1410, as illustrated in FIG 18B. Some embodiments of the method further comprises controlling a position of the alignment jig 1400 relative to the plurality of filament shreds 1171 , as illustrated for example in FIG 18B and FIG 18C, such that an end wall 1372a of the recumbent transport jig suction plate groove 1372 engages a free ends 1171 a of the plurality of filament shreds 1171.

[0138] At S970, the plurality of filament shreds are set to the alignment jig 1400. In some embodiments, the plurality of filament shreds are transferred from the recumbent transport jig 1300 to the alignment jig 1400. In some embodiments, the recumbent transport jig 1300 is also used as the alignment jig 1400, i.e. , for the purpose of a next step in the method as detailed below the plurality of filament shreds arranged in the array layout on the recumbent transport jig 1300 stay in situ, whereby from a functional point of view the plurality of filament shreds are now held on the alignment jig 1400.

[0139] For example, at S975, the plurality of filament shreds are adjusted on the alignment jig 1400. In some embodiments, as described above with reference to FIGS 14Ato 14 C, the surface of the suction plate 1410 of the alignment jig 1400 is essentially planar, and wherein the predetermined direction with respect to the suction plate 1410 is perpendicular to the surface of the suction plate 1410. In some embodiments, upon attraction to the suction plate 1410 of the alignment jig 1400, the method comprises controlling a lateral movement of the recumbent transport jig 1300 relative to the alignment jig 1400.

[0140] At S980, the plurality of filament shreds are raised on the alignment jig 1400. In some embodiments (not shown), aligning the plurality of filament shreds comprises charging the suction plate electrostatically. In some embodiments, the6700171.00003 method comprises controlling a vertical movement of the recumbent transport jig 1300 relative to the alignment jig 1400. For example, as shown in FIG 18C, in some embodiments a combined relative movement of the recumbent transport jig 1300 with respect to the alignment jig 1400, a direction of that relative movement being indicated in FIG 18C by an arrow 1852, due to engagement of the end wall 1342a of the groove 1342 with the free end 1171 a of the filament shred 1171 , raises the respective filament shred 1171 whereby the filament shred 1171 is brought into an upright position with respect to the essentially planar surface of the alignment jig suction plate 1410, and an opposite end 1171 b of the respective filament shred 1171 comes to rest inside the through-holes 1471 in the respective alignment trench 1470 of the alignment jig suction plate 1410. At least one effect can be that the plurality of filament shreds assumes an upright position with respect to a surface charge on the jig. At least one effect can be that waste in transfer of the filament shreds 1171 from the recumbent transport jig 1300 to the alignment jig 1400 is reduced. At least one effect can be that the plurality of filament shreds 1171 are aligned upright in a predetermined array configuration corresponding to the array of through-holes 1471 in the alignment jig suction plate 1410.

[0141] FIGS 19A and 19B are drawings that illustrate use of the apparatus illustrated in FIGS 14A to 15C according to some embodiments. Now with reference to FIGS 19A to 19C, some embodiments of the exemplary method comprise attracting filament shreds of the plurality of warps from the alignment jig 1400 to the upright transport jig 1500.

[0142] Some embodiments of the exemplary method comprise aligning the plurality of filament shreds with a predetermined direction with respect to the suction plate. In some embodiments, as described above with reference to FIGS 15A to 15C, the upright transport jig 1500 comprises a suction plate 1510 provided with an array of through-holes 1571. In some embodiments, the through-holes 1571 widen towards a surface on a far side 1520 of the upright transport jig suction plate 1510 opposite to a near side 1530 of the upright transport jig suction plate6700171.000031510 that faces the plurality of filament shreds. In some embodiments, the method comprises providing a negative pressure gradient between a near side pressure on the near side 1530 of the upright transport jig suction plate 1510 and a far side pressure on the far side 1520 of the upright transport jig suction plate 1510. At least one effect can be that at least some, if not all, of the plurality of filament shreds are respectively attracted to a corresponding one of the array of through- holes 1571 in the upright transport jig suction plate 1510. In some embodiments, one filament shred 1171 is attracted to one through-hole 1571 , respectively. Some embodiments of the method further comprise controlling a position of the upright transport jig 1500 relative to the plurality of filament shreds such that free ends 1171 a of the plurality of filament shreds 1171 , upon attraction to the upright transport jig suction plate 1510, slip inside the though-holes 1571. In some embodiments, the method comprises moving the upright transport jig 1500 relative to the alignment jig 1400 in a direction towards one another as indicated in FIG 19A by an arrow 1951.

[0143] In some embodiments, the plurality of filament shreds are transferred from the alignment jig 1400 to the upright transport jig 1500. In some embodiments, the alignment jig 1400 is also used as the upright transport jig 1500, i.e. , for the purpose of a next step in the method as detailed below the plurality of filament shreds arranged in the array layout on the alignment jig 1400 stay in situ, whereby from a functional point of view the plurality of filament shreds 1171 are now held on the upright transport jig 1500.

[0144] FIGS 20A to 20D are drawings that illustrate use of the apparatus illustrated in FIGS 15A to 16C according to some embodiments. Now with reference to FIGS 20A to 20D, some embodiments of the exemplary method comprise preparing the plurality of filament shreds for setting to the substrate.

[0145] In some embodiments, the method comprises inserting the plurality of filament shreds 1171 into the setting jig 1600. In some embodiments, as described above with reference to FIGS 15Ato 15C, the upright transport jig 1500 comprises6700171.00003 a suction plate 1510 provided with an array of through-holes 1571. In some embodiments, the through-holes 1571 are formed in the essentially planar top surface 1540 on a near side 1530 that is to face the plurality of filament shreds 1171 for transfer. In some embodiments, the plurality of through-holes 1571 widen towards a surface on a far side 1520 of the suction plate 1510 which is opposite to the essentially planar surface 1540 on the near side 1530. In some embodiments, the method comprises providing a negative pressure gradient between a near side pressure on the near side 1530 of the upright transport jig suction plate 1510 that faces the plurality of filament shreds 1171 and the far side pressure on the far side 1520 of the upright transport jig suction plate 1510. In some embodiments, the method comprises providing the far side pressure lower than a reference pressure, while providing the near side pressure higher than the reference pressure. For example, the method can comprise selecting the reference pressure to be the atmospheric pressure. In some embodiments, the method comprises controlling a position of the upright transport jig 1500 relative to the plurality of filament shreds 1171 held on the alignment jig 1400 such that the plurality of filament shreds 1171 , upon attraction to the upright transport jig suction plate 1510, come to rest inside the through-holes 1571 . In some embodiments, the method comprises moving the upright transport jig 1500 relative to the setting jig 1600 in a direction towards one another as indicated in FIG 20A by an arrow 2051 .

[0146] In some embodiments, the plurality of filament shreds are transferred from the upright transport jig 1500 to the setting jig 1600. In some embodiments, the upright transport jig 1500 is also used as the setting jig 1600, i.e., for the purpose of a next step in the method as detailed below the plurality of filament shreds 1171 arranged in the array layout on the upright transport jig 1500 stay in situ, whereby from a functional point of view the plurality of filament shreds 1171 are now held on the setting jig 1600.

[0147] In some embodiments, the method comprises shortening of the filament shreds 1171 , for example, to a length of the support elements 371 a, 371 b, 371c6700171.00003 described above with reference to FIG 3. For example, a knife (not shown) can be used to cut the filament shreds 1171 , similar to a razor, in a plane parallel to the essentially planar surface 1640 of the suction plate 1610 of the setting jig 1600, while the filament shreds 1171 are held in the setting jig 1600, down to shortened filament shreds 271. In some embodiments, as illustrated in FIGS 20C, the shortened filament shreds 271 barely rise above the essentially planar surface 1640 of the setting jig suction plate 1610. In some embodiments, the shortened filament shreds 271 form the support elements 271 a, 271 b, 271 c for use in the manufacturing process of the solar stack described above with reference to FIGS 2A to 20. At least one effect can be that, prior to accommodation in the setting jig 1600, a length of the filament shreds 1171 can be larger than a length of the support elements 271 a, 271 b, 271 c that the filament shreds 1171 are designed to become. The larger length can facilitate handling of the filament shreds 1171 as described above with reference to FIGS 9A and 9B as well as FIGS 12A to 20D.

[0148] In some embodiments, it takes repeated transfer and cutting steps, as illustrated in FIG 20D, to fill the setting jig 1600 with shortened filament shreds 271 .

[0149] At S985, the setting jig is set to the substrate. In some embodiments, setting the setting jig to the substrate comprises controlling a position of the setting jig relative to the substrate to align the plurality of filament shreds on the setting jig with an array of target positions on the substrate. In some embodiments, the plurality of filament shreds is set onto the substrate, whereby a free end of the plurality of filament shreds contacts the substrate at the array of target positions. An exemplary embodiment is illustrated in FIG 2J.

[0150] At S990, the plurality of filament shreds are set to adhesive on the substrate. In some embodiments, a far end of the filament shreds is plunged into the adhesive on the substrate. In some embodiments, the pressure gradient between the low pressure on the far side of the suction plate relative to the pressure on the near side of the suction plate is reduced and, in some6700171.00003 embodiments, reversed, to release and / or discharge the plurality of filament shreds from the suction plate.

[0151] While steps of an exemplary process to transfer filament shreds from one jig to another have been described in some detail with respect, for example, to transfer the filament shreds from the cutting jig to the recumbent transport jig, it should be understood that similar steps can also be used to perform transfer of the filament shreds between other jigs. In particular, control of a pressure difference to increase between a near side and a far side of one suction plate to receive and hold filament shreds and, at the same time, control of another pressure difference to decrease between a near side and a far side of another suction plate to release the filament shreds can be performed when using jigs with suction plates in cooperation as described above in some examples to transfer the filament shreds from one suction plate to the another suction plate.

[0152] In some embodiments (not shown), releasing the plurality of filament shreds comprises charging the suction plate electrostatically. At least one effect can be that the plurality of filament shreds experiences a repellant force with respect to a surface charge on the jig whereby a release of the filament shreds from the jig is facilitated.

[0153] Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that a variety of alternate and / or equivalent implementations may be substituted for the specific embodiments shown and described without departing from the scope of the present invention. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein.

[0154] Although some drawings are provided with exemplary dimensional statements, it should be understood that such statements are merely exemplary. Neither can any such statements be understood to be consistent from one drawing to another, nor should the statements be understood to limit the scope of the present disclosure to the stated dimensions or any combination or ratio thereof.6700171.00003The disclosure of dimensions should be understood merely to state an order of magnitude according to some embodiments. In particular, the invention can be implemented using, other orders of magnitude, other dimensions, other ratios of dimensions. Further, it should be understood that drawings are not drawn to scale.

[0155] The implementations herein are described in terms of exemplary embodiments. However, it should be appreciated that individual aspects of the implementations may be separately claimed and one or more of the features of the various embodiments may be combined.

[0156] Further embodiments according to the invention in various aspects are stated below.

[0157] In an embodiment of the invention according to an aspect a method for use in manufacturing electroactive cells comprises: providing a carrier sheet, providing a base contact layer on the carrier sheet, providing an insulation layer on the base contact layer, setting at least one support element to the carrier sheet, providing an active layer above the carrier sheet, and providing a rear contact layer above the active layer.

[0158] In some embodiments, setting the at least one support element to the carrier sheet comprises setting the at least one support element onto the base contact layer.

[0159] In some embodiments, providing the insulation layer on the base contact layer comprises forming at least one window that exposes an associated portion of the base contact layer.

[0160] In some embodiments, setting the at least one support element to the carrier sheet comprises setting the at least one support element into the at least one window above the base contact layer.6700171.00003

[0161] In some embodiments, the method for use in manufacturing electroactive cells comprises patterning the insulation layer to form the at least one window to the associated portion of the base contact layer.

[0162] In some embodiments, the method for use in manufacturing electroactive cells comprises providing a resist layer on the insulation layer.

[0163] In some embodiments, the resist layer comprises at least one opening that is configured to expose a central portion of the at least one window in the insulation layer. In some embodiments, the at least one opening has a negative undercut.

[0164] In some embodiments, the method for use in manufacturing electroactive cells further comprises exposing the resist layer to radiation.

[0165] In some embodiments, an angle of incidence of the radiation on an essentially planar surface of the resist layer is slant.

[0166] In some embodiments, the method for use in manufacturing electroactive cells comprises removing the resist layer. In some embodiments, the removing the resist layer comprises lifting the resistive layer off the insulation layer.

[0167] In some embodiments, the method for use in manufacturing electroactive cells comprises providing an adhesive layer above the carrier sheet.

[0168] In some embodiments, forming a pattern of adhesive in the adhesive layer.

[0169] In some embodiments, the pattern of adhesive comprises at least one dot of adhesive.

[0170] In some embodiments, the at least one dot of adhesive is exclusively provided on the base contact layer.

[0171] In some embodiments, the at least one dot of adhesive incompletely covers the exposed portion of the base contact layer in the window provided in the insulation layer.6700171.00003

[0172] In some embodiments, setting the at least one support element to the carrier sheet comprises setting the at least one support element onto the adhesive layer.

[0173] In some embodiments, setting the at least one support element to the carrier sheet comprises providing a mounting that comprises at least one support element.

[0174] In some embodiments, setting the at least one support element to the carrier sheet comprises flipping the carrier sheet, with the adhesive layer facing the mounting, onto the mounting.

[0175] In some embodiments, providing the active layer above the carrier sheet comprises: depositing the active layer on the at least one support element, or depositing the active layer on a filament prior to severing the at least one support element from the filament.

[0176] In some embodiments, depositing the active layer on the at least one support element comprises: depositing a semiconducting material on the at least one support element, doping the semiconducting material using a first-type dopant, depositing further semiconducting material on the at least one support element, and doping the semiconducting material using a second-type dopant.

[0177] In some embodiments, the first-type dopant is an n-type dopant. In some embodiments, the second-type dopant is a p-type dopant. In some embodiments, the first-type dopant is a p-type dopant. In some embodiments, the second-type dopant is an n-type dopant. In some embodiments, the p-type dopant is selected from a group of p-type dopants consisting of: Boron, Aluminum, Gallium, Indium, and any combination thereof. In some embodiments, the n-type dopant is selected6700171.00003 from a group of n-type dopants consisting of: Phosphor, Arsenic, Antimony, Bismuth, Lithium, and any combination thereof.

[0178] In some embodiments, forming the active layer comprises depositing a conductive front contact layer before doping the semiconducting material with the first-type dopant.

[0179] In some embodiments, depositing the active layer on the at least one support element comprises: depositing an anode substance; depositing an electrolytic substance; and depositing a cathode substance.

[0180] In an embodiment of the invention according to an aspect, an electroactive device comprises a base, an active layer deposited above the base, and a support structure. In some embodiments, the support structure is set between the base and the active layer.

[0181] In some embodiments, the electroactive device further comprising a rear contact layer. In some embodiments, the active layer is deposited between the support structure and the rear contact layer.

[0182] In some embodiments, the electroactive device further comprises: a base contact layer on the base.

[0183] In some embodiments, the support structure is disposed between the base contact layer and the rear contact layer.

[0184] In some embodiments, the active layer comprises a front contact layer.

[0185] In some embodiments, the electroactive device further comprises an adhesive layer above the base. In some embodiments, the support structure is set onto the adhesive layer. In some embodiments, the adhesive layer comprises portions of adhesive provided above the base contact layer. In some embodiments, a projection of the support structure in the direction of the base is inside the portions of adhesive.6700171.00003

[0186] In some embodiments, the support structure comprises a plurality of disjoint support elements. In some embodiments, the disjoint support elements are spaced apart from one another in a predetermined array layout. In some embodiments, the support structure is provided by the plurality of support elements provided as columns set essentially parallel to one another upright above the base. In some embodiments, the support elements are cut from a filament.

[0187] In some embodiments, the electroactive device further comprises an insulation layer disposed between the base contact layer and the rear contact layer. In some embodiments, the support elements are set into windows provided in the insulation layer. In some embodiments, trenches formed in the insulation layer are filled with material of the rear contact layer. In some embodiments, trenches formed in the base contact layer are filled with material of the insulation layer.

[0188] In some embodiments, the base is provided as superstrata that is essentially transparent to radiation that causes a photoelectric effect in the active layer. In some embodiments, the base is provided as substrate that is configured to reflect radiation that causes a photoelectric effect in the active layer.

[0189] In some embodiments, the active layer is configured to convert radiation incident on the active layer into electric current.

[0190] In some embodiments, the electroactive device is provided as a solar cell.

[0191] In some embodiments, the active layer is configured to convert chemical energy into electrical energy.

[0192] In some embodiments, the electroactive device is provided as a rechargeable voltaic cell.

[0193] In some embodiments, the adhesive layer comprises solder and / or a melt.

[0194] In some embodiments, a solar module comprises an electroactive device.6700171.00003

[0195] In an embodiment of the invention according to an aspect, a method of providing a support structure in an electroactive device comprises: providing a filament mesh comprising a plurality of warps and weft; severing the weft from the filament mesh; attracting filament shreds of the plurality of warps to a setting jig; and setting the setting jig to a substrate.

[0196] In some embodiments, a method of providing a support structure in an electroactive device further comprises controlling the forming the filament mesh in accordance with a predetermined array layout. In some embodiments, the setting jig comprises a suction plate provided with an array of holes.

[0197] In some embodiments, a method of providing a support structure in an electroactive device further comprises providing a negative pressure gradient between a first pressure on a near side of the suction plate that is to face the plurality of filament shreds and a second pressure on a far side of the suction plate, whereby the plurality of filament shreds are respectively attracted to a corresponding one of the array of holes in the suction plate.

[0198] In some embodiments, a method of providing a support structure in an electroactive device further comprises controlling a position of the setting jig relative to the plurality of filament shreds such that free ends of the plurality of filament shreds, upon attraction to the suction plate, rest inside the holes.

[0199] In some embodiments, a method of providing a support structure in an electroactive device further comprising aligning the plurality of filament shreds with a predetermined direction with respect to the suction plate. In some embodiments, the surface of the suction plate is essentially planar. In some embodiments, the predetermined direction is upright with respect to the surface of the suction plate.

[0200] In some embodiments, setting the setting jig to the substrate comprises: controlling a position of the setting jig relative to the substrate to align the plurality of filament shreds with an array of target positions on the substrate; and6700171.00003 setting the plurality of filament shreds onto the substrate, whereby a free end of the plurality of filament shreds contacts the substrate at the array of target positions.

[0201] In some embodiments, a method of providing a support structure in an electroactive device further comprises increasing the low pressure to release the plurality of filament shreds from the suction plate.

[0202] In an embodiment of the invention according to an aspect, an apparatus for use in manufacturing electroactive devices, comprising: a cutting jig configured to support a filament mesh while being cut, whereby a plurality of filament shreds are aligned with a predetermined array layout; a setting jig configured to receive a plurality of filament shreds; and a control system configured to control motion of the setting jig relative to a substrate to enable transfer the plurality of filament shreds to the substrate.

[0203] In some embodiments, an apparatus for use in manufacturing electroactive devices comprising a loom configured to form the filament mesh comprising a plurality of warps and weft.

[0204] In some embodiments, an apparatus for use in manufacturing electroactive devices further comprising a cutting device configured to sever the weft of the filament mesh from the filament mesh to obtain the plurality of filament shreds. In some embodiments, the control system is configured to form the filament mesh in accordance with the predetermined array layout.

[0205] In some embodiments, the setting jig comprises a suction plate provided with an array of holes. In some embodiments, the apparatus is configured to provide a negative pressure gradient between a first pressure on a near side of the suction plate to face the plurality of filament shreds and a second pressure on a far side of the suction plate.6700171.00003

[0206] In some embodiments, the control system is configured to control a position of the setting jig relative to the plurality of filament shreds such that free ends of the plurality of filament shreds, upon attraction to the suction plate, rest inside the holes.

[0207] In some embodiments, the control system is configured to align the plurality of filament shreds with a predetermined direction with respect to the suction plate.

[0208] In some embodiments, a surface of the suction plate is essentially planar.

[0209] In some embodiments, the predetermined direction is upright with respect to the surface of the suction plate.

[0210] In some embodiments, the apparatus is configured to control a position of the setting jig relative to the substrate to align the plurality of filament shreds with an array of target positions on the substrate.

[0211] In some embodiments, the apparatus is configured to set the plurality of filament shreds onto the substrate, whereby a free end of the plurality of filament shreds contacts the substrate at the array of target positions.

[0212] In some embodiments, the apparatus is configured to reduce the pressure gradient between the first pressure and the second pressure to release the plurality of filament shreds from the suction plate.

[0213] In some embodiments, a filament mesh comprises multiple dense mesh portions where a plurality of warps and weft provide a dense mesh, and spaced apart from one another by a wide mesh size portion formed by sections of the plurality of warps free from weft.

[0214] In some embodiments, the plurality of warps comprise glass fiber.

[0215] In some embodiments, a mesh size of the filament mesh in the dense mesh portions is in a range of from 100 pm to 1000 pm.

[0216] In some embodiments, a width of the wide mesh size portion is in a range of from 2 mm to 200 mm.6700171.00003

[0217] As used herein, the term ’substrate’ can refer to a superstrata and / or semi-finished product having a surface which is affected by a process step such as depositing a material on the substrate, whereby the substrate is covered with deposited material, or etching the substrate whereby material is removed from the substrate.

[0218] As used herein, the wording 'homogeneous layer' can mean that material of the homogeneous layer is essentially evenly spread or otherwise evenly provided on an underlying substrate.

[0219] As used herein the wording 'mesh' encompasses a meaning of fabric, cloth, textile, carpet and so forth that can be suitable to obtain filament shreds as disclosed in detail herein.

[0220] The word 'over', used herein to describe forming a feature, e.g. a layer 'over' a side or surface, herein may be used to mean that the feature, e.g. the layer, may be formed 'directly on', e.g. in direct contact with, the implied side or surface. The word 'above', used herein to describe forming a feature, e.g. a layer 'above' a side or surface, may be used to mean that the feature, e.g. the layer, may be formed 'indirectly on' the implied side or surface with one or more additional layers being arranged between the implied side or surface and the formed layer.

[0221] As used herein, directional terminology, such as 'top', 'bottom', 'front', 'back', 'leading', 'trailing', etc., is used with reference to the orientation of the figure(s) being described. As used herein, the terms ’on’ and ‘above’ can also be used relative to the substrate at a time when a described step is performed that affects the substrate. Therefore, notwithstanding a description herein of a layer being provided above a substrate, a finished product can have the substrate form a superstrata above the layer, if, for example, in the finished product the substrate with the layer formed above is flipped upside down.

[0222] As used herein, terms such as 'first', 'second', and the like, are also used to describe various elements, regions, sections, etc. and are also not intended to be limiting.6700171.00003

[0223] As used herein, the word 'exemplary' means serving as an example, instance, or illustration. Any aspect or design described herein as 'exemplary' is not necessarily to be construed as preferred or advantageous over other aspects or designs.

[0224] As used herein, the terms 'at least one' and 'one or more' may be understood to include any integer number equal to one or greater than one, i.e. one, two, three, four, etc.

[0225] As used herein, the term 'a plurality' may be understood to include any integer number greater than or equal to two, i.e. two, three, four, five, etc.

[0226] While above, particularly when describing steps of a method according to some embodiments, reference is made to providing one layer on another layer, it should be understood that "on" means "above" unless expressly stated otherwise or clear from the point of view of the person having an ordinary skill in the art. For example, a step of providing one layer on another layer, wherein the one layer itself has a function other than gluing, can comprise using an adhesive with the one layer and / or with the other layer. In this example, the one layer can be understood to include an adhesive layer to be sandwiched between and in contact with both, a functional portion of the one layer and the other layer, or the step of providing the one layer on the other layer can be understood to include a step of providing an adhesive layer to be in contact with the other layer and then providing the functional portion of the one layer to be in contact with the adhesive layer.

[0227] Embodiments of the invention are described with reference to the following numbered clauses, with preferred features laid out in the dependent clauses. The comprehension of the clauses is improved by establishing the connection between the features mentioned in the clauses and the corresponding reference signs in the drawings. The reference signs in the clauses stated below are not however to be construed as limiting the extent of the disclosure to the referenced drawing; their sole function is to make clauses easier to understand.6700171.00003

[0228] The following clauses relate to a method for use in manufacturing an electroactive cell. The method comprises providing a substrate having an insulation layer on a base, wherein the insulation layer comprises at least one window to the base, setting at least one support element into the at least one window onto the base, and depositing an active layer on the at least one support element.Clause 1 : A method for use in manufacturing electroactive cells, the method comprising: providing a carrier sheet 210, providing a base contact layer 220 on the carrier sheet 210, providing an insulation layer 230 on the base contact layer 220, setting at least one support element to the carrier sheet 210, providing an active layer 280 above the carrier sheet 210, and providing a rear contact layer 290 above the active layer 280.Clause 2: The method of clause 1 , wherein setting the at least one support element to the carrier sheet 210 comprises setting the at least one support element onto the base contact layer 220.Clause 3: The method of clause 2, wherein providing the insulation layer 230 on the base contact layer 220 comprises forming at least one window that exposes an associated portion of the base contact layer 220; wherein setting the at least one support element to the carrier sheet 210 comprises setting the at least one support element into the at least one window above the base contact layer 220.Clause 4: The method of any one of clauses 1 to 3, comprising6700171.00003 patterning the insulation layer 230 to form the at least one window to the associated portion of the base contact layer 220.Clause 5: The method of clause 4, comprising providing a resist layer on the insulation layer 230, wherein the resist layer comprises at least one opening that is configured to expose a central portion of the at least one window in the insulation layer 230, wherein the at least one opening has a negative undercut.Clause 6: The method of clause 5, further comprising exposing the resist layer to radiation, wherein an angle of incidence of the radiation on an essentially planar surface of the resist layer is slant.Clause 7: The method of clause 5 or 6, comprising removing the resist layer, wherein the removing the resist layer comprises lifting the resistive layer off the insulation layer 230.Clause 8: The method of any one of clauses 1 to 7, comprising providing an adhesive layer 260 above the carrier sheet 210.Clause 9: The method of any one of clauses 1 to 8, comprising forming a pattern of adhesive in the adhesive layer 260.Clause 10: The method of clause 9, wherein the pattern of adhesive comprises at least one dot of adhesive, wherein the at least one dot of adhesive is exclusively provided on the base contact layer 220.6700171.00003Clause 11 : The method of clause 10, wherein the at least one dot of adhesive incompletely covers the exposed portion of the base contact layer 220 in the window provided in the insulation layer 230.Clause 12: The method of any one of clauses 8 to 11 , wherein setting the at least one support element to the carrier sheet 210 comprises setting the at least one support element onto the adhesive layer 260.Clause 13: The method of any one of the preceding clauses, wherein setting the at least one support element to the carrier sheet 210 comprises providing a mounting that comprises at least one support element.Clause 14: The method of clause 13, wherein setting the at least one support element to the carrier sheet 210 comprises flipping the carrier sheet 210, with the adhesive layer facing the mounting, onto the mounting.Clause 15: The method of any one of clauses 1 to 14, wherein providing the active layer 280 above the carrier sheet 210 comprises depositing the active layer 280 on the at least one support element, orClause 16: The method of any one of clauses 1 to 15, wherein depositing the active layer 280 on the at least one support element 271 comprises: depositing a semiconductive material on the at least one support element, doping the semiconductive material using a first-type dopant, depositing further semicondcutive material on the at least one support element, and6700171.00003 doping the semiconductive material using a second-type dopant.Clause 17: The method of clause 16, wherein the first-type dopant is an n-type dopant, and wherein the second-type dopant is a p-type dopant; or wherein the first-type dopant is a p-type dopant, and wherein the second-type dopant is an n-type dopant.Clause 18: The method of clause 17, wherein the p-type dopant is selected from a group of p-type dopants consisting of: Boron, Aluminum, Gallium, Indium, and any combination thereof; and wherein the n-type dopant is selected from a group of n-type dopants consisting of: Phosphor, Arsenic, Antimony, Bismuth, Lithium, and any combination thereof.Clause 19: The method of any of the preceding clauses; wherein forming the active layer 280 comprises: depositing a conductive front contact layer 285 before doping the semiconductive material with the first-type dopant.Clause 20: The method of any one of clauses 15 to 19, wherein depositing the active layer on the at least one support element comprises:

[0229] The following clauses relate to an electroactive device. The electroactive device comprises a base, an active layer deposited above the base, and a support structure, wherein the support structure comprises an array of support elements set between the base and the active layer.Clause 21 : An electroactive device, comprising: a base 310,6700171.00003 an active layer 380 deposited above the base 310, and a support structure 370, wherein the support structure is set between the base and the active layer 380.Clause 22: The electroactive device of clause 21 , further comprising: a rear contact layer 390; wherein the active layer 380 is deposited between the support structure 370 and the rear contact layer 390.Clause 23: The electroactive device of clause 22, further comprising: a base contact layer 320 on the base 310, wherein the support structure 370 disposed between the base contact layer 320 and the rear contact layer 390.Clause 24: The electroactive device of clause 23, wherein the active layer 380 comprises a front contact layer 385.Clause 25: The electroactive device of clause 21 , further comprising an adhesive layer 360 above the base 310, wherein the support structure 370 is set onto the adhesive layer 360.Clause 26: The electroactive device of clause 25, wherein the adhesive layer 360 comprises portions of adhesive 362 provided above the base contact layer 320; and wherein a projection of the support structure 370 in the direction of the base 310 is inside the portions of adhesive 362.Clause 27: The electroactive device of clause 21 ,6700171.00003 wherein the support structure 370 comprises a plurality of disjunct support elements 371 .Clause 28: The electroactive device of clause 27, wherein the disjunct support elements 371 are spaced apart from one another in a predetermined array layout.Clause 29: The electroactive device of clause 27 or 28, wherein the support structure 370 is provided by the plurality of support elements 371 provided as columns set essentially parallel to one another upright above the base 310.Clause 30: The electroactive device any one of clauses 27 to 29, wherein the support elements 371 are cut from a filament.Clause 31 : The electroactive device of any one of clauses 27 to 30, further comprising: an insulation layer 330 disposed between the base contact layer 320 and the rear contact layer 390, wherein the support elements 371 are set into windows provided in the insulation layer 330.Clause 32: The electroactive device of clause 31 , wherein trenches formed in the insulation layer 330 are filled with material of the rear contact layer 390.Clause 33: The electroactive device of clause 31 , wherein trenches formed in the base contact layer 320 are filled with material of the insulation layer 330.6700171.00003Clause 34: The electroactive device of any one of clauses 21 to 33, wherein the base 310 is provided as superstrata that is essentially transparent to radiation that causes a photoelectric effect in the active layer 380.Clause 35: The electroactive device of any one of clauses 21 to 33, wherein the base 310 is provided as substrate that is configured to reflect radiation that causes a photoelectric effect in the active layer 380.Clause 36: The electroactive device of any one of clauses 21 to 35, wherein the active layer 380 is configured to convert radiation incident on the active layer 380 into electric current.Clause 37: The electroactive device of clause 36, wherein the electroactive device is provided as a solar cell.Clause 38: The electroactive device of any one of clause 21 to 37, wherein the active layer 380 is configured to convert chemical energy into electrical energy.Clause 39: The electroactive device of clause 38, wherein the electroactive device is provided as a rechargeable voltaic cell.Clause 40: The electroactive device of clause 38 or 39, wherein the adhesive layer 360 comprises solder and / or a melt.Clause 41 : A solar module, comprising an electroactive device according to any one of the preceding clauses.6700171.00003

[0230] The following clauses relate to a method of providing support elements for an electroactive device. The method for providing a support structure in an electroactive device comprises providing a filament mesh comprising a plurality of warps and weft, severing the weft from the warp, attracting filament shreds of the warp to a setting jig, and setting the setting jig to a substrate.Clause 42: A method of providing a support structure in an electroactive device, the method comprising: providing a filament mesh 1000 comprising a plurality of warps 1071 and weft 1021 ; severing the weft 1021 from the filament mesh 1000; attracting filament shreds 1171 of the plurality of warps 1071 to a setting jig 1600; and setting the setting jig 1600 to a substrate 200.Clause 43: The method of clause 42, further comprising: controlling the forming the filament mesh 1000 in accordance with a predetermined array layout.Clause 44: The method of clause 42 or 43, wherein the setting jig 1600 comprises a suction plate 1610 provided with an array of holes 1671 ; the method further comprising: providing a negative pressure gradient between a first pressure on a near side 1630 of the suction plate 1610 that is to face the plurality of filament shreds 1071 and a second pressure on a far side 1620 of the suction plate 1610, whereby the plurality of filament shreds 1171 are respectively attracted to a corresponding one of the array of holes 1671 in the suction plate 1610.Clause 45: The method of clause 44, the method further comprising:6700171.00003 controlling a position of the setting jig 1600 relative to the plurality of filament shreds 1171 such that free ends of the plurality of filament shreds, upon attraction to the suction plate 1610, rest inside the holes 1671.Clause 46: The method of clause 45, the method further comprising: aligning the plurality of filament shreds 1171 with a predetermined direction with respect to the suction plate 1610.Clause 47: The method of clause 46, wherein the surface 1640 of the suction plate 1610 is essentially planar, and wherein the predetermined direction is upright with respect to the surface 1640 of the suction plate 1610.Clause 48: The method of any one of clauses 42 to 47, wherein setting the setting jig 1600 to the substrate 200 comprises: controlling a position of the setting jig 1600 relative to the substrate 200 to align the plurality of filament shreds 271a, 271b, 271c with an array of target positions on the substrate 200; and setting the plurality of filament shreds 271a, 271b, 271c onto the substrate 200, whereby a free end of the plurality of filament shreds 271a, 271b, 271c contacts the substrate 200 at the array of target positions.Clause 49: The method of any one of clauses 42 to 48, further comprising: increasing the low pressure to release the plurality of filament shreds 271a, 271 b, 271c from the suction plate 1610.

[0231] The following clauses relate to an apparatus for use in manufacturing electroactive devices. The apparatus for use in manufacturing electroactive devices comprises a cutting jig configured to support a filament mesh while being6700171.00003 cut, whereby a plurality of filament shreds are aligned with a predetermined array layout, a setting jig configured to receive a plurality of filament shreds, and a control system configured to control the setting jig relative to a substrate to enable transfer the plurality of filament shreds to the substrate:Clause 50: An apparatus for use in manufacturing electroactive devices, comprising: a cutting jig 1200 configured to support a filament mesh 1000 while being cut, whereby a plurality of filament shreds 1171 are aligned with a predetermined array layout; a setting jig 1600 configured to receive a plurality of filament shreds 1171 ; and a control system configured to control motion of the setting jig 1600 relative to a substrate 200 to enable transfer the plurality of filament shreds 271 a, 271 b, 271 c to the substrate 200.Clause 51 : The apparatus of clause 50, comprising a loom configured to form the filament mesh 1000 comprising a plurality of warps 1071 and weft 1021.Clause 52: The apparatus of clause 50 or 51 , further comprising a cutting device configured to sever the weft 1021 of the filament mesh 1000 from the filament mesh 1000 to obtain the plurality of filament shreds 1171.Clause 53: The apparatus of any one of clauses 50 to 52, wherein the control system is configured to form the filament mesh 1000 in accordance with the predetermined array layout.Clause 54: The apparatus of any one of clauses 50 to 53,6700171.00003 wherein the setting jig 1600 comprises a suction plate 1610 provided with an array of holes 1671 ; and wherein the apparatus is configured to provide a negative pressure gradient between a first pressure on a near side 1630 of the suction plate 1610 to face the plurality of filament shreds 1171 and a second pressure on a far side 1620 of the suction plate 1610.Clause 55: The apparatus of clause 54, wherein the control system is configured to control a position of the setting jig 1600 relative to the plurality of filament shreds 1171 such that free ends of the plurality of filament shreds 1171 , upon attraction to the suction plate 1610, rest inside the holes 1671.Clause 56: The apparatus of clause 55, wherein the control system is configured to align the plurality of filament shreds 1171 with a predetermined direction with respect to the suction plate 1610.Clause 57: The apparatus of clause 56, wherein a surface 1640 of the suction plate 1610 is essentially planar, and wherein the predetermined direction is upright with respect to the surface 1640 of the suction plate 1610.Clause 58: The apparatus of any one of clauses 50 to 57, wherein the apparatus is configured to control a position of the setting jig 1600 relative to the substrate 200 to align the plurality of filament shreds 271a, 271 b, 271 c with an array of target positions on the substrate 200; and wherein the apparatus is configured to set the plurality of filament shreds 271 a, 271 b, 271 c onto the substrate 200, whereby a free end of the plurality of filament shreds 271 a, 271 b, 271 c contacts the substrate 200 at the array of target positions.6700171.00003Clause 59: The apparatus of any one of clauses 50 to 58, wherein the apparatus is configured to reduce the pressure gradient between the first pressure and the second pressure to release the plurality of filament shreds 271 a, 271 b, 271 c from the suction plate 1610.

[0232] The following clauses relate to a filament mesh. The filament mesh comprises multiple dense mesh portions where a plurality of warps and weft provide a dense mesh. The multiple dense mesh portions are spaced apart from one another by a wide mesh size portion formed by sections of the plurality of warps free from weft:Clause 60: A filament mesh 1000, comprising: multiple dense mesh portions 1020 where a plurality of warps 1071 and weft 1021 provide a dense mesh, and spaced apart from one another by a wide mesh size portion 1070 formed by sections of the plurality of warps 1071 free from weft.Clause 61 : The filament mesh of clause 60, wherein the plurality of warps 1071 comprise glass fiber.Clause 62: The filament mesh of any one of clauses 60 to 61 , wherein a mesh size of the filament mesh 1000 in the dense mesh portions 1020 is in a range of from 100 pm to 1000 pm, and wherein a width of the wide mesh size portion 1070 is in a range of from 2 mm to 200 mm.

[0233] Reference signs:210 carrier sheet220 base contact layer6700171.00003230 insulation layer231 insulation layer trench232 insulation layer window240 etchant layer250 photoresist layer254 sidewall259 hard mask260 patterned mask261 radiation270 support structure280 active layer290 rear contact layer300 solar module stack310 carrier sheet311 carrier sheet surface320 base contact layer330 insulation layer360 adhesive layer370 support structure385 front contact layer387 p-doped portion388 semiconductive material layer389 n-doped portion390 rear contact layer800 solar module's surface area1000 filament mesh1020 dense mesh portions1021 weft1070 wide mesh size portions6700171.000031071 warp1072 distance1100 array of filament shreds1171 filament shred1200 cutting jig1210 cutting jig suction plate1220 cutting jig suction plate far side surface1230 cutting jig suction plate near side surface1240 cutting jig suction plate mould portion1250 cutting jig suction plate cut-stop plane1270 cutting jig suction plate elevated portion1271 cutting jig suction plate through-holes1272 cutting jig suction plate elevated portion guide channels1275 cutting jig suction plate elevated portion top surface1300 recumbent transport jig1310 recumbent transport jig suction plate1320 recumbent transport jig suction plate far side surface1330 recumbent transport jig suction plate near side surface1371 recumbent transport jig suction plate through-hole1372 recumbent transport jig suction plate groove1400 alignment jig1410 alignment jig suction plate1420 alignment jig suction plate planar surface1471 alignment jig suction plate through-hole1472 alignment jig suction plate alignment trench1500 upright transport jig1510 upright transport jig suction plate1520 upright transport jig suction plate far side1530 upright transport jig suction plate near side6700171.000031540 upright transport jig suction plate planar surface1571 upright transport jig suction plate through-hole1600 setting jig1610 setting jig suction plate1620 setting jig suction plate far side1630 setting jig suction plate near side1640 setting jig suction plate planar surface1751 arrow representative of attraction of filament shred from cutting jig suction plate to pickup jig suction plate2310 second device superstate base1171a filament shred free end1171 b filament shred opposite end1371a, 1371 b, 1371c first device support elements1372a recumbent transport jig suction plate groove end wall1671a, 1671 b, 1671c, 1671 setting jig suction plate through-hole201a, 201b, 201c cells202a, 202b rear contact layer gaps220, 320 base contact layer220a first contact stripe220b second contact stripe222a exposed selected portions222a selected portions of the first contact layer 220 correspond to the selected portions 242a, 242b, 242c222a, 222b, 222c contact layer portions230, 330 insulation layer231a, 231 b, 231c insulation layer trenches232a, 232b, 232c insulation layer windows234a, 234b, 234c exposed selected insulation layer portions2371a, 2371 b, 2371c second device support elements6700171.00003241a, 241 b, 241c, 242a, 242b, 242c selected portions244a, 244b, 244c non-selected insulation layer portions252a, 252b photoresist layer opening252a, 252b, 252c resist layer / hard mask opening256a, 256b, 256c selected photoresist layer portions262a, 262b, 262c adhesive droplet271a, 271 b, 271c support element281a, 281b, 281c first portions of the active layer 280282a, 282b, 282c second portions of the active layer 280301a, 301b, 301c solar module stack cells302a, 302b rear contact layer gaps302a, 302b rear contact layer windows332a, 332b plurality of base contact layer windows362a, 362b, 362c adhesive portions371a, 371 b, 371c support elements381a, 381b, 381c plurality of active layer portions390a, 390b, 390c second contact layer

Claims

6700171.00003CLAIMS1 . An electroactive device, comprising: a base (310), an active layer (380) deposited above the base (310), and a support structure (370), wherein the support structure is set between the base and the active layer 380.

2. The electroactive device of claim 1 , further comprising: a rear contact layer (390); wherein the active layer (380) is deposited between the support structure (370) and the rear contact layer (390).

3. The electroactive device of claim 2, further comprising: a base contact layer (320) on the base (310), wherein the support structure (370) disposed between the base contact layer (320) and the rear contact layer (390).

4. The electroactive device of claim 3, wherein the active layer (380) comprises a front contact layer (385).

5. The electroactive device of claim 1 , further comprising an adhesive layer (360) above the base (310), wherein the support structure (370) is set onto the adhesive layer (360).

6. The electroactive device of claim 5, wherein the adhesive layer (360) comprises portions of adhesive (362) provided above the base contact layer (320); and6700171.00003 wherein a projection of the support structure (370) in the direction of the base (310) is inside the portions of adhesive (362).

7. The electroactive device of claim 1 , wherein the support structure (370) comprises a plurality of disjunct support elements (371 ).

8. The electroactive device of claim 7, wherein the disjunct support elements (371 ) are spaced apart from one another in a predetermined array layout.

9. The electroactive device of claim 7 or 28, wherein the support structure (370) is provided by the plurality of support elements (371 ) provided as columns set essentially parallel to one another upright above the base (310).

10. The electroactive device any one of claims 7 to 9, wherein the support elements (371 ) are cut from a filament.

11. The electroactive device of any one of claims 7 to 10, further comprising: an insulation layer (330) disposed between the base contact layer (320) and the rear contact layer (390), wherein the support elements (371 ) are set into windows provided in the insulation layer (330).

12. The electroactive device of claim 11 , wherein trenches formed in the insulation layer (330) are filled with material of the rear contact layer (390).6700171.0000313. The electroactive device of claim 11 , wherein trenches formed in the base contact layer (320) are filled with material of the insulation layer (330).

14. The electroactive device of any one of claims 1 to 13, wherein the base (310) is provided as superstrata that is essentially transparent to radiation that causes a photoelectric effect in the active layer (380).

15. The electroactive device of any one of claims 1 to 13, wherein the base (310) is provided as substrate that is configured to reflect radiation that causes a photoelectric effect in the active layer (380).

16. The electroactive device of any one of claims 1 to 15, wherein the active layer (380) is configured to convert radiation incident on the active layer (380) into electric current.

17. The electroactive device of claim 16, wherein the electroactive device is provided as a solar cell.

18. The electroactive device of any one of claim 1 to 17, wherein the active layer (380) is configured to convert chemical energy into electrical energy.

19. The electroactive device of claim 18, wherein the electroactive device is provided as a rechargeable voltaic cell.

20. The electroactive device of claim 18 or 19, wherein the adhesive layer (360) comprises solder and / or a melt.6700171.0000321 . A solar module, comprising an electroactive device according to any one of the preceding claims.

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