Probe card

Abstract

A probe card (100) is provided with a probe substrate (11) on which electrode pads (31) for having probes (20) attached are formed on a surface layer (L1) and in which embedded wirings (32) electrically connected to the electrode pads (31) are formed in inner layers (L2, L3). A plurality of the electrode pads (31) plus embedded wirings (32) are positioned in an adjoining manner. In the inner layers (L2, L3) of the probe substrate (11), a bridge part (40) fixed to the plurality of electrode pads (31) and / or the plurality of embedded wirings (32) is embedded.

Description

Probe card 【0001】 The present invention relates to a probe card. 【0002】 A probe card is an inspection device used to inspect the electrical characteristics of a semiconductor integrated circuit formed on a semiconductor wafer. The probe card is provided with a large number of probes for contacting electrode pads on the semiconductor wafer. By contacting the probes with the electrode pads of the semiconductor integrated circuit formed on the semiconductor wafer to conduct the semiconductor integrated circuit and an external device, the inspection of the semiconductor integrated circuit is performed. 【0003】 The probes are provided on a probe substrate. On the surface of the probe substrate, extremely small probes are arranged at a narrow pitch, and access to each probe is performed through an electrode on the back surface of the probe substrate. For this reason, the probe substrate has a multilayer wiring structure, and internal wirings of each layer are connected to form a wiring extending in the thickness direction of the substrate (see, for example, Patent Document 1). 【0004】 Japanese Patent Application Laid-Open No. 2004-69692 【0005】 There are various types of probe cards. One of them is a probe card equipped with a fine cantilever-type probe. This type of probe is manufactured using MEMS (Micro Electro Mechanical Systems) technology and has an elongated beam that extends substantially parallel to the probe substrate and elastically deform. A contact portion for contacting an electrode pad on the semiconductor wafer is provided at the tip of the beam, and the root portion of the beam is soldered to an electrode pad on the surface of the probe substrate and firmly fixed. 【0006】Such probes can be damaged if subjected to excessive external force during inspection or other procedures, causing them to tilt and break. In this case, the adhesive force between the wiring inside the probe substrate and the surrounding insulating substrate is weaker than that of the solder, so the wiring inside the probe substrate detaches from the insulating substrate before the solder detaches from the electrode pads. If the failure is due to solder detachment, the probe can be repaired relatively easily by soldering a new probe, but if the wiring inside the probe substrate detaches from the insulating substrate, repairing the probe becomes extremely difficult. 【0007】 In view of the above problems, the present invention aims to provide a probe card in which, when a probe soldered to an electrode pad is subjected to excessive external force, the solder detaches from the electrode pad before the wiring inside the probe substrate. 【0008】 A probe card according to one aspect of the present invention comprises a probe substrate having electrode pads formed on its surface to which probes are attached, and embedded wiring electrically connected to the electrode pads formed on its inner layer. A plurality of the electrode pads and embedded wiring are arranged adjacent to each other, and a bridge portion fixed to the plurality of electrode pads and / or the plurality of embedded wiring is embedded in the inner layer of the probe substrate. 【0009】 According to the present invention, when a probe soldered to an electrode pad is subjected to excessive external force, the solder can be made to detach from the electrode pad before the wiring inside the probe substrate. This allows the probe to be easily repaired even if it is damaged. 【0010】This is a bottom view showing the overall configuration of a probe card according to one embodiment of the present invention. This is a side view showing the overall configuration of a probe card according to one embodiment of the present invention. This is a partial plan view of the probe mounting surface of the probe substrate. This is a cross-sectional view AA of Figure 3 relating to a first bridge example. This is a schematic diagram showing the positional relationship of the electrode pad, embedded wiring, and bridge part according to the first bridge example. This is a cross-sectional view AA of Figure 3 relating to a second bridge example. This is a schematic diagram showing the positional relationship of the electrode pad, embedded wiring, and bridge part according to the second bridge example. This is a cross-sectional view AA of Figure 3 relating to a third bridge example. This is a schematic diagram showing the positional relationship of the electrode pad, embedded wiring, and bridge part according to the third bridge example. This is a cross-sectional view AA of Figure 3 relating to a fourth bridge example. This is a schematic diagram showing the positional relationship of the electrode pad, embedded wiring, and bridge part according to the fourth bridge example. 【0011】 The embodiments of the present invention will be described in detail below, with reference to the drawings as appropriate. However, unnecessary details may be omitted. For example, detailed explanations of already well-known matters or redundant explanations of substantially identical configurations may be omitted. This is to avoid the following explanation becoming unnecessarily verbose and to facilitate understanding by those skilled in the art. The inventors provide the accompanying drawings and the following explanation so that those skilled in the art can fully understand the present invention, and do not intend to limit the subject matter described in the claims by these. Furthermore, the dimensions and detailed shapes of each component depicted in the drawings may differ from those of the actual components. 【0012】 ≪Overall Configuration of the Probe Card≫ Figure 1 is a bottom view showing the overall configuration of a probe card according to one embodiment of the present invention. Figure 2 is a side view showing the overall configuration of a probe card according to one embodiment of the present invention. The probe card 100 according to this embodiment comprises a main substrate 10, a probe substrate 11, a reinforcing plate 13, and a number of probes 20. For convenience, the vertical direction will be described below with the substrate side as the top and the probe side as the bottom. 【0013】The main board 10 is a flat wiring board held by a prober (not shown), for example, a circular printed circuit board. Two or more external terminals (not shown) for connecting to a tester device (not shown) are provided on the outer edge of the main board 10. The reinforcing plate 13 is a flat reinforcing member for reinforcing the main board 10, and is attached to the upper surface of the main board 10. 【0014】 The probe substrate 11 is a flat wiring board to which the probe 20 is attached, and is positioned below the main substrate 10, facing the main substrate 10 and parallel to it. The probe substrate 11 is, for example, a circular ceramic substrate, and is positioned below the main substrate 10 in a region inside the external terminal formation area of ​​the main substrate 10, via a support frame or guide plate (not shown). The probe substrate 11 may also be a polygonal substrate such as an octagon or hexagon. 【0015】 The probe 20 is a contact probe made of a conductive material and is mounted upright on the surface of the probe substrate 11. More specifically, the probe 20 is a cantilever-type probe fabricated using MEMS technology and has a contact portion 21, a beam 22, and a base 23. The contact portion 21 is at the tip of the beam 22, and the base 23 is at the base of the beam 22. 【0016】 The contact portion 21 is the contact portion that comes into contact with the object to be inspected and has a shape that protrudes downward. The beam 22 has a shape that extends substantially parallel to the probe substrate 11 and elastically deforms due to the reaction force from the object to be inspected when the contact portion 21 comes into contact with the object to be inspected. The base 23 is the needle base portion that is fixed to the probe substrate 11. 【0017】 On the lower surface of the probe substrate 11, a probe row is formed in which multiple probes 20 are aligned adjacent to each other in the width direction. Each probe 20 in the probe row is positioned so that the sides of the beam 22 face each other. In the probe card 100 shown in Figure 1, the probe row is composed of five probes 20. 【0018】When inspecting a semiconductor wafer using the probe card 100, the semiconductor wafer is brought close to the probe card 100 so that the contact portion 21 of the probe 20 comes into contact with the electrode pads on the semiconductor wafer. At this time, the beam 22 receives a vertical load due to the reaction force from the electrode pads, and elastically deforms with the end on the base 23 side as the fixed end and the end on the contact portion 21 side as the free end. Due to this deformation of the beam 22, the contact portion 21 scrubs the surface of the electrode pads in the direction of the beam 22's extension. 【0019】 ≪Detailed Configuration of the Probe Substrate≫ Next, the detailed configuration of the probe substrate 11 will be described. The probe substrate 11 is also called an ST (Space Transformer) substrate, and is a substrate that converts the arrangement pitch of fine electrodes, such as tens of microns, on the front and back surfaces of the substrate without impairing its electrical properties. 【0020】 Figure 3 is a partial plan view of the probe mounting surface of the probe substrate, showing a plan view of the probe row consisting of five probes 20 as shown in Figure 1. Electrode pads 31 are formed adjacent to each other and at equal intervals in the width direction on the surface layer L1 of the probe substrate 11, which is the probe mounting surface. The bases 23 of the probes 20 are soldered to these electrode pads 31. The beam 22 extends in the longitudinal direction of the electrode pads 31, and the contact portion 21 beyond it is located away from the electrode pads 31. 【0021】 The probe substrate 11 is a multilayer wiring board in which insulating substrates such as polyimide are laminated. Numerous embedded wirings 32 are formed in the inner layer of the insulating substrate of the probe substrate 11. The embedded wirings 32 are aligned adjacent to each other in the width direction in the same orientation as the electrode pads 31. 【0022】 Viewed in the thickness direction of the probe substrate 11, the embedded wiring 32 in adjacent layers are connected to each other, and the embedded wiring 32 in the uppermost layer is connected to the electrode pad 31, forming a laminated wiring 30 that extends in the thickness direction of the probe substrate 11. The laminated wiring 30 does not touch each other, but provides electrical conductivity from the electrode pad 31 on the surface of the probe substrate 11 to electrodes on the back surface (not shown). This allows each probe 20 to be accessed from each electrode on the back surface of the probe substrate 11 (not shown). 【0023】A bridge portion 40 spanning multiple stacked wirings 30 is embedded in any inner layer of the probe substrate 11. For example, as shown in Figure 3, an electrode pad 31 above the bridge portion 40 and an embedded wiring 32 below the bridge portion 40 are fixed via the bridge portion 40, or embedded wirings 32 above and below the bridge portion 40 are fixed via the bridge portion 40. The structure will be explained below with reference to several bridge examples. 【0024】 ≪First Bridge Example≫ Figure 4 is a cross-sectional view of AA in Figure 3 relating to the first bridge example. Figure 5 is a schematic diagram showing the positional relationship between the electrode pad, embedded wiring, and bridge portion relating to the first bridge example. For convenience, Figure 4 shows four layers from the surface of the probe substrate 11, namely the surface layer L1 and the inner layers L2, L3, and L4. Also, Figure 5 shows an example of a bridge portion 40 that bridges two stacked wirings 30. 【0025】 The electrode pad 31 of the surface layer L1 is made of copper (Cu), for example, and a thin nickel (Ni) film 311 is formed on its surface, and a thin gold (Au) film 312 is formed on top of that. The base 23 of the probe 20 is fixed to the gold film 312 of the electrode pad 31 with solder 24. 【0026】 Embedded wiring 32 is formed in the insulating substrate of the inner layer L2. The upper surface of the embedded wiring 32 in the inner layer L2 is in contact with the lower surface of the electrode pad 31. The embedded wiring 32 in the inner layer L2 is made of, for example, copper (Cu). 【0027】 In the inner layer L3, embedded wiring 32 shorter than that of the inner layer L2 is formed in the insulating substrate, offset in the longitudinal direction from the embedded wiring 32 of the inner layer L2. The upper surface of the embedded wiring 32 of the inner layer L3 is in contact with the lower surface of the embedded wiring 32 of the inner layer L2. The embedded wiring 32 of the inner layer L3 is made of, for example, copper (Cu). 【0028】 In the inner layer L4, vias 33 are formed in the insulating substrate. The vias 33 are in contact with the lower surface of the embedded wiring 32 in the inner layer L3. The vias 33 are further in contact with embedded wiring in a lower layer (not shown), and the laminated wiring 30 is connected to electrodes (not shown) on the back surface of the probe substrate 11. 【0029】In the inner layer L3, the embedded wiring 32 is offset from the embedded wiring 32 of the inner layer L2. In other words, a bridge section 40 spanning multiple laminated wirings 30 is embedded directly beneath the embedded wiring 32 of the inner layer L2. The bridge section 40 is made of a metal such as copper (Cu) to ensure rigidity. 【0030】 An insulating film 41 is formed on the upper surface of the bridge portion 40, and the upper surface of the bridge portion 40 and the lower surface of the embedded wiring 32 of the inner layer L2 are fixed together via the insulating film 41. The insulating film 41 is, for example, a silicon nitride (SiN) film with a thickness of several micrometers, and titanium (Ti) films with a thickness of tens to hundreds of nanometers are formed on both sides to improve adhesion between the embedded wiring 32 and the bridge portion 40. Both the silicon nitride film and the titanium film can be formed by sputtering. 【0031】 In the configuration of the first bridge example, when a probe 20 connected to any of the multiple laminated wirings 30 bridged by the bridge portion 40 is subjected to excessive external force, the force applied to the laminated wiring 30 connected to the probe 20 is distributed to the other laminated wirings 30 through the bridge portion 40. This makes it easier for the solder 24 to detach from the electrode pad 31 before the laminated wiring 30 detaches from the insulating substrate. Furthermore, since the embedded wiring 32 of the inner layer L2 is insulated and fixed to the bridge portion 40, multiple laminated wirings 30 of different systems do not become electrically connected to each other. 【0032】 ≪Second Bridge Example≫ Figure 6 is a cross-sectional view of AA in Figure 3 relating to the second bridge example. Figure 7 is a schematic diagram showing the positional relationship between the electrode pad, embedded wiring, and bridge portion relating to the second bridge example. For convenience, Figure 6 shows four layers from the surface of the probe substrate 11, namely the surface layer L1 and the inner layers L2, L3, and L4. Also, Figure 7 shows an example of a bridge portion 40 that bridges two stacked wirings 30. 【0033】 The electrode pad 31 of the surface layer L1 is made of copper (Cu), for example, and a thin nickel (Ni) film 311 is formed on its surface, and a thin gold (Au) film 312 is formed on top of that. The base 23 of the probe 20 is fixed to the gold film 312 of the electrode pad 31 with solder 24. 【0034】 In the inner layer L2, embedded wiring 32 shorter than the electrode pad 31 is formed in the insulating substrate, offset in the longitudinal direction from the electrode pad 31. The upper surface of the embedded wiring 32 in the inner layer L2 is in contact with the lower surface of the electrode pad 31. The embedded wiring 32 in the inner layer L2 is made of, for example, copper (Cu). 【0035】 The embedded wiring 32 of the inner layer L3 is formed offset in the longitudinal direction from the embedded wiring 32 of the inner layer L2, and the direction of this offset is opposite to the direction in which the embedded wiring 32 of L2 is offset relative to the electrode pad 31 of L1. The upper surface of the embedded wiring 32 of the inner layer L3 is in contact with the lower surface of the embedded wiring 32 of the inner layer L2. The embedded wiring 32 of the inner layer L3 is made of, for example, copper (Cu). 【0036】 In the inner layer L4, vias 33 are formed in the insulating substrate. The vias 33 are in contact with the lower surface of the embedded wiring 32 in the inner layer L3. The vias 33 are further in contact with embedded wiring in a lower layer (not shown), and the laminated wiring 30 is connected to electrodes (not shown) on the back surface of the probe substrate 11. 【0037】 In the inner layer L2, a bridge portion 40 spanning multiple laminated wirings 30 is embedded in the portion where the embedded wiring 32 is offset from the electrode pad 31 and the embedded wiring 32 of the inner layer L3, that is, in the portion sandwiched from above and below by the electrode pad 31 and the embedded wiring 32 of the inner layer L3. The bridge portion 40 is made of a metal such as copper (Cu) to ensure rigidity. 【0038】 Insulating films 41 are formed on the upper and lower surfaces of the bridge portion 40. The upper surface of the bridge portion 40 is fixed to the lower surface of the electrode pad 31 via the insulating film 41 on the upper surface, and the lower surface of the bridge portion 40 is fixed to the upper surface of the embedded wiring 32 of the inner layer L3 via the insulating film 41 on the lower surface. The insulating film 41 is, for example, a silicon nitride (SiN) film with a thickness of several micrometers. To improve adhesion between the electrode pad 31 and the embedded wiring 32 and the bridge portion 40, titanium (Ti) films with a thickness of tens to hundreds of nanometers are formed on both sides. Both the silicon nitride film and the titanium film can be formed by sputtering. 【0039】In the configuration of the second bridge example, when a probe 20 connected to any of the multiple laminated wirings 30 bridged by the bridge portion 40 is subjected to excessive external force, the force applied to the laminated wiring 30 connected to the probe 20 is distributed to the other laminated wirings 30 through the bridge portion 40. This makes it easier for the solder 24 to detach from the electrode pad 31 before the laminated wiring 30 detaches from the insulating substrate. Furthermore, since the electrode pad 31 and the embedded wiring 32 of the inner layer L2 are insulated and fixed to the bridge portion 40, multiple laminated wirings 30 of different systems do not become electrically connected to each other. 【0040】 ≪Third Bridge Example≫ Figure 8 is a cross-sectional view of AA in Figure 3 relating to the third bridge example. Figure 9 is a schematic diagram showing the positional relationship between the electrode pad, embedded wiring, and bridge portion relating to the third bridge example. For convenience, Figure 8 shows four layers from the surface of the probe substrate 11, namely the surface layer L1 and the inner layers L2, L3, and L4. Also, Figure 9 shows an example of a bridge portion 40 that bridges two stacked wirings 30. 【0041】 The electrode pad 31 of the surface layer L1 is made of copper (Cu), for example, and a thin nickel (Ni) film 311 is formed on its surface, and a thin gold (Au) film 312 is formed on top of that. The base 23 of the probe 20 is fixed to the gold film 312 of the electrode pad 31 with solder 24. 【0042】 In the inner layer L2, embedded wiring 32 shorter than the electrode pad 31 is formed in the insulating substrate, offset in the longitudinal direction from the embedded wiring 32 of the inner layer L2. The upper surface of the embedded wiring 32 of the inner layer L2 is in contact with the lower surface of the electrode pad 31. The embedded wiring 32 of the inner layer L2 is made of, for example, copper (Cu). 【0043】 The embedded wiring 32 of the inner layer L3 is formed offset in the longitudinal direction from the embedded wiring 32 of the inner layer L2, and the direction of this offset is opposite to the direction in which the embedded wiring 32 of L2 is offset relative to the electrode pad 31 of L1. The upper surface of the embedded wiring 32 of the inner layer L3 is in contact with the lower surface of the embedded wiring 32 of the inner layer L2. The embedded wiring 32 of the inner layer L3 is made of, for example, copper (Cu). 【0044】In the inner layer L4, vias 33 are formed in the insulator substrate. The vias 33 are in contact with the lower surface of the buried wiring 32 of the inner layer L3. The vias 33 further contact buried wirings in a lower layer (not shown), and the laminated wiring 30 is connected to electrodes (not shown) on the back surface of the probe substrate 11. 【0045】 In the inner layer L4, a bridge portion 40 extending across a plurality of laminated wirings 30 is embedded directly below the buried wiring 32 of the inner layer L3. The bridge portion 40 is made of a metal such as copper (Cu) to ensure rigidity. 【0046】 An insulating film 41 is formed on the upper surface of the bridge portion 40, and the upper surface of the bridge portion 40 and the lower surface of the buried wiring 32 of the inner layer L3 are fixed through the insulating film 41. The insulating film 41 is, for example, a silicon nitride (SiN) film with a thickness of several micrometers, and titanium (Ti) films with a thickness of several tens to several hundreds of nanometers are formed on both sides to improve the adhesion between the buried wiring 32 and the bridge portion 40. Both the silicon nitride film and the titanium film can be formed by sputtering. 【0047】 According to the configuration of the third bridge example, when the probe 20 connected to any one of the plurality of laminated wirings 30 bridged by the bridge portion 40 receives an excessive external force, the force applied to the laminated wiring 30 connected to the probe 20 is dispersed to other laminated wirings 30 through the bridge portion 40. Thereby, it is possible to make the solder 24 more likely to peel off from the electrode pad 31 before the laminated wiring 30 peels off from the insulator substrate. Further, since the buried wiring 32 of the inner layer L4 is insulatingly fixed to the bridge portion 40, a plurality of laminated wirings 30 of different systems do not conduct with each other. 【0048】 <<Fourth Bridge Example>> Fig. 10 is a cross-sectional view taken along line AA of Fig. 3 according to the fourth bridge example. Fig. 11 is a schematic diagram showing the positional relationship among the electrode pads, buried wirings, and bridge portion according to the fourth bridge example. For the sake of convenience, in Fig. 10, four layers, namely, the surface layer L1 and the inner layers L2, L3, and L4, are illustrated from the surface of the probe substrate 11. Also, in Fig. 11, an example of a bridge portion 40 bridging two laminated wirings 30 is illustrated. 【0049】The electrode pad 31 of the surface layer L1 is made of copper (Cu), for example, and a thin nickel (Ni) film 311 is formed on its surface, and a thin gold (Au) film 312 is formed on top of that. The base 23 of the probe 20 is fixed to the gold film 312 of the electrode pad 31 with solder 24. 【0050】 Embedded wiring 32 is formed in the insulating substrate of the inner layer L2. The upper surface of the embedded wiring 32 in the inner layer L2 is in contact with the lower surface of the electrode pad 31. The embedded wiring 32 in the inner layer L2 is made of, for example, copper (Cu). 【0051】 In the inner layer L3, two embedded wirings 32, shorter than the embedded wiring 32 of the inner layer L2, are formed in the insulating substrate at a distance from each other. The upper surface of the embedded wiring 32 of the inner layer L3 is in contact with the lower surface of the embedded wiring 32 of the inner layer L2. The embedded wiring 32 of the inner layer L3 is made of, for example, copper (Cu). 【0052】 In the inner layer L4, vias 33 are formed in the insulating substrate. The vias 33 are in contact with the lower surface of the embedded wiring 32 in the inner layer L3. The vias 33 are further in contact with embedded wiring in a lower layer (not shown), and the laminated wiring 30 is connected to electrodes (not shown) on the back surface of the probe substrate 11. 【0053】 In the inner layer L3, a bridge portion 40 is embedded between two embedded wirings 32 and directly below the embedded wirings 32 of the inner layer L2, that is, surrounded by the embedded wirings 32 of the inner layer L2 and the embedded wirings 32 of the inner layer L3, and extending across multiple laminated wirings 30. The bridge portion 40 is made of a metal such as copper (Cu) to ensure rigidity. 【0054】 An insulating film 41 is formed on the upper surface and both sides in the width direction of the bridge portion 40. The upper surface of the bridge portion 40 is fixed to the lower surface of the embedded wiring 32 of the inner layer L2 via the insulating film 41, and both sides in the width direction of the bridge portion 40 are fixed to the sides of the two embedded wirings 32 of the inner layer L3 via the insulating film 41 on both sides in the width direction. The insulating film 41 is, for example, a silicon nitride (SiN) film with a thickness of several micrometers. To improve adhesion between the embedded wiring 32 and the bridge portion 40, a titanium (Ti) film with a thickness of tens to hundreds of nanometers is formed on both sides. Both the silicon nitride film and the titanium film can be formed by sputtering. 【0055】 In the configuration of the fourth bridge example, when a probe 20 connected to any of the laminated wirings 30 bridged by the bridge portion 40 is subjected to excessive external force, the force applied to the laminated wiring 30 connected to the probe 20 is distributed to the other laminated wirings 30 through the bridge portion 40. This makes it easier for the solder 24 to detach from the electrode pad 31 before the laminated wiring 30 detaches from the insulating substrate. Furthermore, since the embedded wirings 32 of the inner layer L2 and the embedded wirings 32 of the inner layer L3 are insulated and fixed to the bridge portion 40, multiple laminated wirings 30 of different systems do not become electrically connected to each other. 【0056】 <<Variation>> The number of stacked wirings 30 that the bridge section 40 bridges is not limited to 5. The bridge section 40 may bridge 4 or fewer stacked wirings 30, or it may bridge 6 or more stacked wirings 30. 【0057】 The electrode pads 31 and embedded wiring 32 may be insulated and fixed to the bridge section 40 so as to surround the four sides of the bridge section 40 (top, bottom, left, and right). Alternatively, the laminated wiring 30 may be bridged by multiple bridge sections 40. The bridging force improves as the contact surface area between the bridge section 40 and the electrode pads 31 and embedded wiring 32 increases, and as the number of bridge sections 40 increases. 【0058】 As described above, embodiments have been explained as examples of the technology in the present invention. For this purpose, accompanying drawings and a detailed description have been provided. Therefore, among the components described in the accompanying drawings and detailed description, there may be not only components that are essential for solving the problem, but also components that are not essential for solving the problem, in order to illustrate the above technology. For this reason, the mere fact that these non-essential components are described in the accompanying drawings and detailed description should not be immediately assumed to be essential. Furthermore, since the above embodiments are for the purpose of illustrating the technology in the present invention, various changes, substitutions, additions, omissions, etc., can be made within the scope of the claims or equivalents. 【0059】100 Probe card 10 Main board 11 Probe board 13 Reinforcement plate 20 Probe 21 Contact section 22 Beam 23 Base 24 Solder L1 Surface layer L2, L3, L4 Inner layers 30 Multilayer wiring 31 Electrode pad 32 Embedded wiring 33 Via 40 Bridge section 41 Insulating film

Claims

1. A probe card comprising a probe substrate having electrode pads formed on its surface layer to which probes are attached, and embedded wiring electrically connected to the electrode pads formed on its inner layer, wherein a plurality of the electrode pads and the embedded wiring are arranged adjacent to each other, and a bridge portion fixed to the plurality of electrode pads and / or the plurality of embedded wiring is embedded in the inner layer of the probe substrate.

2. The probe card according to claim 1, wherein the plurality of electrode pads are aligned adjacent to each other in a predetermined direction, and the bridge portion is installed across the plurality of electrode pads and / or the plurality of embedded wirings.

3. The probe card according to claim 1 or 2, wherein the bridge portion is made of metal, and the electrode pads and / or the embedded wiring are fixed to the bridge portion via an insulating film.

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