Light-emitting device and method for manufacturing same

Abstract

The present invention provides a highly reliable light-emitting device by reducing occurrence of cracks in a light-reflecting member. The light-emitting device includes a light-emitting element and a light-reflecting member that reflects light emitted from the light-emitting element. The light-reflecting member contains a resin and silicon oxide. A solid-state 29Si NMR spectrum of the light-reflecting member has a first peak at a chemical shift value of about -97 ppm.

Description

Light-emitting device and method for manufacturing the same 【0001】 This disclosure relates to a light-emitting device and a method for manufacturing the same. 【0002】 Light-emitting devices are known that include a light-emitting element (optical semiconductor element) and a reflective layer for reflecting light from the light-emitting element. For example, Patent Document 1 discloses a light-emitting device that includes a reflective layer comprising a silicone resin and titanium dioxide as a light-reflecting component. 【0003】 Japanese Patent Publication No. 2018-014480 【0004】 The object of this disclosure is to provide a highly reliable light-emitting device and a method for manufacturing the light-emitting device. 【0005】 A light-emitting device according to one embodiment of the present invention includes a light-emitting element and a light-reflecting member that reflects light emitted from the light-emitting element, wherein the light-reflecting member comprises a resin and silicon oxide, and the solid of the light-reflecting member ２９ The Si NMR spectrum has a first peak at a chemical shift value of approximately -97 ppm. 【0006】 A method for manufacturing a light-emitting device according to one embodiment of the present invention is a method for manufacturing a light-emitting device comprising a light-emitting element and a light-reflecting member that reflects light emitted from the light-emitting element, comprising: a mixing step of preparing a mixture comprising a prepolymer, a silica sol, and a solvent; a coating step of coating the side surface of the light-emitting element with the mixture; and a curing step of curing the mixture to form the light-reflecting member. 【0007】 According to embodiments of this disclosure, it is possible to provide a highly reliable light-emitting device and a method for manufacturing the light-emitting device. 【0008】 This is a schematic top view showing an example of a light-emitting device according to Embodiment 1. This is a schematic cross-sectional view taken along the line 1b-1b in Figure 1A. Solid of a light-reflective member made from a mixture containing a silicone resin prepolymer and silica sol. ２９ This is a Si NMR spectrum. The solid is a light-reflecting component made from a mixture containing a silicone resin prepolymer and fumed silica.２９ This is a Si NMR spectrum. It represents a solid light-reflecting component made from raw materials containing a silicone resin prepolymer but without a silicon dioxide source. ２９ This is a Si NMR spectrum. This is a schematic diagram of a mixture for manufacturing a light-reflecting member used in the light-emitting device according to Embodiment 1. This is a schematic diagram for explaining the manufacturing method of the light-emitting device according to Embodiment 1. This is a schematic diagram for explaining the manufacturing method of the light-emitting device according to Embodiment 1. This is a schematic diagram for explaining the manufacturing method of the light-emitting device according to Embodiment 1. This is a schematic diagram for explaining the manufacturing method of the light-emitting device according to Embodiment 1. This is a schematic diagram for explaining the manufacturing method of the light-emitting device according to Embodiment 1. This is a schematic diagram for explaining the manufacturing method of the light-emitting device according to Embodiment 1. This is a photograph of the appearance of the light-emitting device of sample No. 1 after being energized for 1500 hours in the high-temperature, high-humidity operation test of the example, with the top side showing it lit and the bottom side showing it off. This is a photograph of the appearance of the light-emitting device of sample No. 2 after being energized for 1500 hours in the high-temperature, high-humidity operation test of the example, with the top side showing it lit and the bottom side showing it off. This is a photograph of the appearance of light-emitting device No. 3 after being energized for 1500 hours; the top image shows it when lit, and the bottom image shows it when turned off. This is a graph showing the change in relative luminous intensity with respect to the energizing time of light-emitting devices No. 1 to 3 in the high-temperature, high-humidity operation test of the example. 【0009】 The following describes embodiments of the light-emitting element according to the present invention. Note that the drawings referenced in the following description are schematic representations of the present invention, and therefore the scale, spacing, and positional relationships of the components may be exaggerated, or some components may be omitted from the illustration. Furthermore, the scale and spacing of components may not always match between the top view and the cross-sectional view. In the following description, the same names and reference numerals generally indicate the same or identical components, and detailed explanations will be omitted as appropriate. 【0010】 In this specification, terms such as "top," "bottom," etc., indicate the relative positions of components in the drawings referenced for explanatory purposes, and are not intended to indicate absolute positions unless otherwise specified. 【0011】[Embodiment 1] (Light-emitting device 10) Figure 1A is a schematic top view showing an example of a light-emitting device according to Embodiment 1, and Figure 1B is a schematic cross-sectional view taken along the line 1b-1b in Figure 1A. The light-emitting device 10 includes a light-emitting element 20 and a light-reflective member (first light-reflective member) 30 that reflects light emitted from the light-emitting element 20. The light-emitting device 10 further includes a light-transmitting member 40, an adhesive layer 50, a second light-reflective member 60, a wiring board 70, and a protective element 80. The second light-reflective member 60 is a member that reflects light emitted from the light-emitting element 20, similar to the light-reflective member 30. The wiring board 70 includes a base material 73, upper-side wiring 71 arranged on the upper surface of the base material 73, and back-side wiring 72 arranged on the back surface of the base material 73. The upper-side wiring 71 and the back-side wiring 72 are electrically connected. The light-emitting element 20 is joined to the wiring board 70 by a joining member 90 such as an Au bump. Furthermore, the protective element 80 is joined to the wiring board 70 by a bonding member 91 such as an Au bump. The bonding member 91 is in contact with the electrode 85 of the protective element 80. 【0012】 (Light-reflecting member 30) The light-reflecting member 30 contains resin and silicon oxide. "Silicon oxide" mainly includes silica particles and aggregates of silica particles that are aggregated or bonded together. Solid of the light-reflecting member 30 ２９ The Si NMR spectrum has a first peak at a chemical shift value of approximately -97 ppm. The chemical shift value is determined based on the measurement environment of the nuclear magnetic resonance (NMR) apparatus and the chemical structure of the sample being measured. The reason why the chemical shift value of the first peak is set to "approximately -97 ppm" is that it may deviate from -97 ppm depending on the measurement environment and / or chemical structure. For example, the chemical shift value of the first peak may vary depending on the chemical structure of the silicon compound contained in the light-reflective member 30, resulting in a deviation of several ppm to tens of ppm. Therefore, "approximately -97 ppm" as the chemical shift value of the first peak in this specification includes a range of -97 ppm ± tens of ppm (for example, a range of approximately -130 ppm to approximately -60 ppm). 【0013】The resin contained in the light-reflective member 30 is, for example, a silicone resin. In this case, in the range where the first peak exists, there is also a second peak (chemical shift value is approximately -106 ppm) derived from the silicone resin. The solid of the light-reflective member 30 ２９ In the Si NMR spectrum of the light-reflective member 30, among the peaks existing in the range of -97 ppm ± several tens of ppm, the peak with the strongest intensity and the second strongest peak are presumed to be the first peak or the second peak. Details of the method for specifying the first peak and the second peak will be described later. 【0014】 The resin contained in the light-reflective member 30 is not limited to a silicone resin, and may be, for example, an acrylic resin or an epoxy resin. When the light-reflective member 30 does not contain a silicone resin, the solid of the light-reflective member 30 ２９ In the Si NMR spectrum, usually there is one peak existing in the range of -97 ppm ± several tens of ppm, and this peak is the first peak. When there are two or more peaks in the above range, the first peak can be specified by the method using the second peak. Details of the method for specifying the first peak using the second peak will be described later. As described above, the method for specifying the first peak is different between the case where the light-reflective member 30 contains a silicone resin and the case where it does not. Whether the light-reflective member 30 contains a silicone resin or not can be specified by known analysis methods such as infrared spectroscopy (FTIR) and thermogravimetric measurement (TGA). 【0015】 The solid of the light-reflective member 30 ２９ The Si NMR spectrum of the light-reflective member 30 is measured by the following procedure. The light-reflective member 30 is pulverized and filled into a sample tube for solid NMR. The sample tube is set in a probe and MAS and tuning are performed. Solid NMR measurement is performed by the cross polarization (CP) method under the conditions of a central magnetic field intensity of 9.4 T and a MAS rotation speed of 10 kHz. 【0016】 The first peak is a peak observed when using silica sol (a colloidal solution in which silica particles are dispersed in a solvent) as the silicon oxide source. That is, the solid of the light-reflective member 30 ２９When the Si NMR spectrum is measured and the first peak is observed, it is presumed that the light-reflective member 30 is made from a mixture containing a resin and a silica sol. 【0017】 That the first peak is observed when using a silica sol as the silicon oxide source can be confirmed from the solid ２９ Si NMR spectra in FIGS. 2A to 2C. FIGS. 2A to 2C show the solids obtained by measuring, by the CP-MAS method, the light-reflective members 30 made from different raw materials at a central magnetic field strength of 9.4 T and a MAS rotation speed of 10 kHz. ２９ These are Si NMR spectra. 【0018】 FIG. 2A shows the solid ２９ Si NMR spectrum of the light-reflective member 30 manufactured from a mixture containing a prepolymer of a silicone resin as a raw material of the resin and a silica sol as a silicon oxide source. The light-reflective member 30 contains a silicone resin and silicon oxide derived from the silica sol. In the solid ２９ Si NMR spectrum of FIG. 2A, a first peak with a chemical shift value of approximately -97 ppm and a second peak with a chemical shift value of approximately -106 ppm can be confirmed. As used herein, the "prepolymer" includes an intermediate product in which the polymerization or condensation reaction of a monomer is stopped midway, and may further include unreacted monomers in addition to the intermediate product. 【0019】 FIG. 2B shows the solid ２９ Si NMR spectrum of the light-reflective member manufactured from a mixture containing a prepolymer of a silicone resin and fumed silica as a silicon oxide source. The light-reflective member contains a silicone resin and silicon oxide derived from fumed silica. In the solid ２９ Si NMR spectrum of FIG. 2B, the first peak with a chemical shift value of approximately -97 ppm is not confirmed, and the second peak with a chemical shift value of approximately -106 ppm can be confirmed. That the first peak is confirmed in the solid ２９ Si NMR spectrum of FIG. 2A but not in the solid ２９ Si NMR spectrum of FIG. 2B is presumably because the chemical structures of the silica sol and fumed silica are different. 【0020】 Figure 2C shows the solid state Si NMR spectrum of a light-reflective member made from a raw material containing a prepolymer of silicone resin but not containing a silicon oxide source. The light-reflective member contains silicone resin but does not contain silicon oxide. In the solid state Si NMR spectrum of Figure 2C, the first peak with a chemical shift value of approximately -97 ppm is not confirmed, and the second peak with a chemical shift value of approximately -106 ppm can be confirmed. ２９ That is, in the light-emitting device 10 according to Embodiment 1, the light-reflective member 30 contains resin and silicon oxide, and when producing the light-reflective member 30, silica sol is used as the silicon oxide source as suggested by the presence of the first peak in the solid state Si NMR spectrum of the light-reflective member 30. By using silica sol when producing the light-reflective member 30, the occurrence of cracks in the light-reflective member 30 can be reduced. The mechanism for reducing crack occurrence is presumed as follows. ２９ The light-reflective member 30 is produced by curing a mixture containing a prepolymer, silica sol, and a solvent. Here, it was confirmed that the mixture before curing is transparent but becomes cloudy after curing. From the occurrence of cloudiness, it is presumed that when the mixture is cured, a plurality of silica particles contained in the silica sol are in a bonded state and exist in the resin in that state. This presumption will be described with reference to Figure 3. 【0021】 That is, in the light-emitting device 10 according to Embodiment 1, the light-reflective member 30 contains resin and silicon oxide, and when producing the light-reflective member 30, silica sol is used as the silicon oxide source as suggested by the presence of the first peak in the solid state Si NMR spectrum of the light-reflective member 30. By using silica sol when producing the light-reflective member 30, the occurrence of cracks in the light-reflective member 30 can be reduced. The mechanism for reducing crack occurrence is presumed as follows. ２９ The light-reflective member 30 is produced by curing a mixture containing a prepolymer, silica sol, and a solvent. Here, it was confirmed that the mixture before curing is transparent but becomes cloudy after curing. From the occurrence of cloudiness, it is presumed that when the mixture is cured, a plurality of silica particles contained in the silica sol are in a bonded state and exist in the resin in that state. This presumption will be described with reference to Figure 3. 【0022】 The light-reflective member 30 is produced by curing a mixture containing a prepolymer, silica sol, and a solvent. Here, it was confirmed that the mixture before curing is transparent but becomes cloudy after curing. From the occurrence of cloudiness, it is presumed that when the mixture is cured, a plurality of silica particles contained in the silica sol are in a bonded state and exist in the resin in that state. This presumption will be described with reference to Figure 3. 【0023】Figure 3 is a schematic diagram of a mixture 300 for manufacturing a light-reflecting member 30 used in a light-emitting device 10 according to Embodiment 1. In Figure 3, P1 represents prepolymer particles and P2 represents silica particles. The prepolymer can exist as prepolymer particles, but it can also exist as an amorphous prepolymer, such that multiple prepolymer particles are bonded together. In the mixture 300, multiple silica particles P2 are aggregated in region A. The aggregated multiple silica particles P2 are surrounded by multiple prepolymer particles P1 (or amorphous prepolymer). The aggregated multiple silica particles P2 are bonded together by a curing treatment such as heating to become silica particles P20. The multiple prepolymer particles P1 (or amorphous prepolymer) that surrounded the aggregated multiple silica particles P2 polymerize by a curing treatment such as heating to become a resin. The resin surrounds the silica particles P20, which are formed by the bonding of multiple silica particles P2. In the light-reflective member 30, the silica particles P20 are composed of multiple silica particles P2 bound together, which can suppress the propagation of cracks that reach the silica particles P20. 【0024】 The mechanism of crack formation in the light-reflective member 30 is thought to be due to the decomposition of the resin contained in the light-reflective member 30. The resin contained in the light-reflective member 30 can be decomposed in the presence of light, heat, and moisture. If the light-reflective member 30 contains titanium dioxide, the photocatalytic action of titanium dioxide may accelerate the decomposition of the resin. The decomposition of the resin and the formation of cracks will be described in detail using the case where the light-reflective member 30 contains silicone resin as an example. 【0025】 Silicone resins contain Si, O, and CH ３It has a chain-like structure in which molecules are linked together. When the chain-like silicone resin decomposes, the chains are broken. The broken chains recombine with adjacent molecules. As a result, the chain-like structure of the silicone resin becomes shorter, and a cross-linked structure is formed by further recombination, causing the silicone resin to harden. When the silicone resin hardens, strain (deformation) occurs due to stress such as thermal expansion, which can cause cracks. When the light-emitting device 10 includes a light-transmitting member 40, it is presumed that the part of the light-reflecting member 30 that is prone to cracking is the part that is in contact with the light-transmitting member 40. The part of the light-reflecting member 30 that is in contact with the light-transmitting member 40 is the part that is irradiated with light passing through the light-transmitting member 40, so it is thought that the light-reflecting member 30 absorbs some of the light that has passed through the light-transmitting member 40, and that this light is likely to cause a reaction. In addition, it is thought that this part is prone to reaction due to moisture that can penetrate along the interface between the light-reflecting member 30 and the light-transmitting member 40. For these reasons, it is thought that the decomposition of the resin is easily accelerated in this part, and that cracks are likely to occur. Furthermore, at the interface between the light-transmitting member 40 and the light-reflective member 30, tensile or compressive stress may occur due to the difference in thermal expansion coefficients of these members, which is also considered a cause of crack formation. 【0026】 Furthermore, as shown in region B, when silica particles P2 and prepolymer particles P1 (or amorphous prepolymer) are in contact, it is thought that when a curing treatment such as heating is performed, a portion of the contact area, that is, a portion of the interface between silica particles P2 and prepolymer particles P1 (or amorphous prepolymer), will bond together. As described above, when the mixture 300 is cured, it is thought that multiple silica particles P2 will bond together to become silica particles P20, and the prepolymer particles P1 (or amorphous prepolymer) will become resin. In addition, it is thought that the silica particles P20 and the resin will bond together at a portion of the interface where the silica particles P2 and prepolymer particles P1 were in contact. This bonding improves the bonding strength within the materials constituting the light-reflective member 30, making it less likely for cracks to occur and suppressing the propagation of cracks. Therefore, it is thought that the occurrence of cracks in the light-reflective member 30 can be reduced. 【0027】The silicon dioxide content in the light-reflective member 30 is preferably 0.5% by mass or more and 3% by mass or less, and more preferably 0.5% by mass or more and 2% by mass or less. When the silicon dioxide content is within this range, the effect of reducing crack occurrence can be further improved. Furthermore, when the silicon dioxide content is within this range, the shape of the light-reflective member 30 can be stably formed, and the manufacturing yield can be improved. Note that "silicon dioxide content" is the silicon dioxide content (by mass) when the mass of the light-reflective member 30 is taken as 100% by mass. 【0028】 Since the silicon dioxide in the light-reflective member 30 originates from silica particles contained in the silica sol, the silicon dioxide content in the light-reflective member 30 is equal to the silica particle content in the silica sol contained in the mixture 300 for manufacturing the light-reflective member 30. The silica particle content can be calculated from the mass of silica particles used in the manufacture of the light-reflective member 30, and the mass of silica particles can be calculated from the mass of the silica sol used in the manufacture of the light-reflective member 30 and the silica particle content in the silica sol. For measuring the mass of the silica sol, for example, an electronic balance can be used. 【0029】 When the light-reflective member 30 contains silicone resin, solid ２９ The Si NMR spectrum has a second peak originating from the silicone resin at a chemical shift value of approximately -106 ppm. The peak intensity of the second peak is I ２ The peak intensity I of the first peak relative to １ , in other words, peak intensity ratio I １ / I ２ It is preferable that the peak intensity ratio is 0.1 times or more and 0.5 times or less. １ / I ２ A peak intensity ratio of 0.1 times or more and 0.5 times or less corresponds to a silicon dioxide content of 0.5% by mass or more and 3% by mass or less in the light-reflecting member 30. Therefore, the peak intensity ratio I １ / I ２ If the value falls within the above range, the effect of reducing crack occurrence in the light-reflective member 30 can be further improved. 【0030】Furthermore, similar to the first peak, the position of the second peak is set to "approximately -106 ppm" because it may deviate from -106 ppm depending on the measurement environment and / or chemical environment. For example, the chemical shift value of the second peak fluctuates due to intermolecular interactions at the interface between the silicone resin contained in the light-reflective member 30 and other substances (such as silica particles). Therefore, the chemical shift value of the second peak may deviate by several ppm to tens of ppm from -106 ppm. For this reason, "approximately -106 ppm," which is the chemical shift value of the second peak in this specification, includes a range of -106 ppm ± tens of ppm (for example, a range of approximately -140 ppm to approximately -70 ppm). However, as mentioned above, not only the second peak but also the first peak may exist in this range. The first and second peaks can be identified, for example, by the following method. 【0031】 The first and second peaks have the following relationship: (i) The difference in chemical shift values ​​between the first and second peaks is in the range of 5 ppm to 30 ppm. (ii) The first peak has a smaller chemical shift value (absolute value) than the second peak. Based on these conditions (i) and (ii), the two peaks can be assigned to the first and second peaks, respectively. The peak with the strongest intensity is the second peak. 【0032】 The specific method for assigning peaks is shown in Figure 2A for solids ２９ Let's explain using the Si NMR spectrum as an example. Figure 2A shows the solid state of the light-reflecting member 30 containing silicone resin. ２９ This is a Si NMR spectrum, and in the range of approximately -140 ppm to approximately -70 ppm, the strongest peak (a peak at -106.393 ppm) and the second strongest peak (a peak at -97.201 ppm) are observed. The difference in chemical shift values ​​between these peaks is 9.192 ppm, satisfying condition (i). The absolute chemical shift values ​​are 97.201 ppm for the second strongest peak and 106.393 ppm for the strongest peak. From condition (ii), the second strongest peak is the first peak, and the strongest peak is the second peak. 【0033】 Using this knowledge, a solid light-reflective member 30 that does not contain silicone resin can be developed. ２９ In the Si NMR spectrum, even if there are two or more peaks in the range of approximately -130 ppm to approximately -60 ppm, the first peak can be identified, and even if there is only one peak in that range, it can be verified that that peak is the first peak. First, the solid of the light-reflecting member 30 that does not contain silicone resin ２９ The Si NMR spectrum is measured (referred to as the "first spectrum"), and then silicone resin is added to the sample to obtain the solid again. ２９ The Si NMR spectrum is measured (referred to as the "second spectrum"). By comparing the first spectrum and the second spectrum, the peak present only in the second spectrum is the "second peak" originating from the silicone resin. Using the chemical shift value of this second peak as a reference, the peak in the first spectrum that satisfies the above conditions (i) and (ii) is the first peak. 【0034】 Each peak intensity I １ , I ２ This shall be determined from the area of ​​the peak curve. Here, since the area of ​​the peak curve is proportional to the number of silicon (Si) nuclei being measured, the peak intensity I of the first peak １ This is proportional to the number of Si nuclei in the silicon oxide contained in the light-reflective material, and the peak intensity of the second peak I ２ It is proportional to the number of Si nuclei in the silicone resin contained in the light-reflective material. Therefore, the peak intensity ratio I １ / I ２ This can serve as an indicator of the silicon dioxide content in the light-reflective member 30. Peak intensity ratio I １ / I ２The effect of reducing crack occurrence can be further improved if the silicon dioxide content is such that the ratio is between 0.1 and 0.5 times. The peak area can be determined using the analysis software implemented in the solid NMR measuring instrument. For example, the peak area can be determined using the Delta analysis software implemented in the solid NMR measuring instrument JNM-ECZL400G (manufactured by JEOL Ltd.). 【0035】 The light-reflective member 30 further comprises one or more light-reflective materials selected from the group consisting of titanium oxide, zirconium oxide, and aluminum oxide. Since these light-reflective materials have high reflectivity for visible light, a light-reflective member 30 with high reflectivity for light from the light-emitting element 20 can be obtained. Note that by using a light-absorbing material instead of the light-reflective material added to the light-reflective member 30, the light-reflective member 30 can be changed to a light-absorbing member. Furthermore, a light-absorbing material may be used together with the light-reflective material added to the light-reflective member 30. Examples of light-absorbing materials include black pigments such as carbon black and titanium black. 【0036】 As shown in Figure 1B, the light-emitting element 20 may have a lower surface 20b, an upper surface 20a located opposite the lower surface 20b, and a side surface 20c located between the lower surface 20b and the upper surface 20a. The light-emitting element 20 is equipped with electrodes 25 on the lower surface 10b side, and the upper surface 20a side is the light extraction surface. In the example shown in Figure 1B, the light-reflective member 30 covers the side surface 20c of the light-emitting element 20. This reflects the light emitted from the side surface 20c toward the upper surface 20a of the light-emitting element 20, thereby improving the light extraction efficiency of the light-emitting device 10. The light-reflective member 30 may directly cover the side surface 20c of the light-emitting element 20, or it may indirectly cover it via another member such as an adhesive layer 50, or via an air layer. 【0037】(Light-emitting element 20) The light-emitting element 20 is a semiconductor element that emits light on its own when a voltage is applied. An example of the light-emitting element 20 is an LED (Light Emitting Diode) chip. The light-emitting element 20 comprises a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The first semiconductor layer, the light-emitting layer, and the second semiconductor layer are configured as a laminate. The light-emitting element 20 may or may not have an element substrate that supports the laminate. The element substrate is made of an insulating material such as sapphire, spinel, or glass. The element substrate is located on the lower side of the light-emitting element 20. 【0038】 The first semiconductor layer and the second semiconductor layer have different conductivity types. For example, if the first semiconductor layer is an n-type semiconductor layer, the second semiconductor layer is a p-type semiconductor layer. The light-emitting layer may have a single quantum well (SQW) structure or a multi-quantum well (MQW) structure including multiple well layers. 【0039】 The first semiconductor layer, the light-emitting layer, and the second semiconductor layer may each be semiconductor layers made of a nitride semiconductor. The nitride semiconductor includes semiconductors of all compositions obtained by varying the composition ratios x and y within their respective ranges in the chemical formula InxAlyGa1-x-yN (0 ≤ x, 0 ≤ y, x + y ≤ 1). The emission peak wavelength of the light-emitting layer can be appropriately selected depending on the purpose. The light-emitting layer is configured to emit, for example, visible light or ultraviolet light. 【0040】 When a structure comprising a first semiconductor layer, an emissive layer, and a second semiconductor layer is considered as a single laminate, the light-emitting element 20 may comprise multiple laminates. In this case, for example, the multiple laminates may be stacked sequentially in the direction of the laminate. The multiple emissive layers comprising each of the multiple laminates may include well layers with different emission peak wavelengths, or they may include well layers with the same emission peak wavelength. 【0041】The combination of emission peak wavelengths of multiple laminates can be selected as appropriate. For example, if the light-emitting element 20 comprises two laminates, possible combinations of light emitted from the light-emitting layers of each laminate include blue light and blue light, green light and green light, red light and red light, ultraviolet light and ultraviolet light, ultraviolet light and blue light, blue light and green light, blue light and red light, or green light and red light. For example, if the light-emitting element 20 comprises three laminates, possible combinations of light emitted from the light-emitting layers of each laminate include blue light, green light, and red light. 【0042】 (Translucent member 40, adhesive layer 50) The light-emitting device 10 further comprises a translucent member 40 disposed on the upper surface 20a side of the light-emitting element 20. The translucent member 40 may include a wavelength conversion material (e.g., a phosphor). For example, a white light-emitting device can be obtained by using a blue light-emitting diode as the light-emitting element 20 and a translucent member containing a phosphor that absorbs blue light and emits yellow light as the translucent member 40. The phosphor may be, for example, yttrium aluminum garnet (Y ３ Al ５ O １２ :YAG) can be used. 【0043】 In the example shown in Figure 1B, the light-reflective member 30 covers the side surface of the light-transmitting member 40. This allows the light emitted from the side surface of the light-transmitting member 40 to be reflected by the light-reflective member 30 and extracted from the top surface of the light-transmitting member 40, thereby improving the brightness of the light-emitting device 10. Furthermore, the brightness difference between the top surface of the light-transmitting member 40 (i.e., the light-emitting region) and the top surface of the light-reflective member 30 (i.e., the non-light-emitting region) can be increased, thereby improving the contrast ratio of the light-emitting device 10. 【0044】In the example shown in Figure 1B, the translucent member 40 is placed on the upper surface 20a of the light-emitting element 20 via an adhesive layer 50. However, the translucent member 40 may also be placed on the upper surface 20a of the light-emitting element 20 without the adhesive layer 50. When the translucent member 40 is placed on the upper surface 20a of the light-emitting element 20 without the adhesive layer 50, the translucent member 40 can be placed on the upper surface 20a of the light-emitting element 20 using direct bonding methods such as compression bonding, sintering, surface activation bonding, atomic diffusion bonding, or hydroxyl group bonding. The adhesive layer 50 is further placed between the light-reflecting member 30 and the side surface 20c of the light-emitting element 20. The adhesive layer 50 covering the side surface 20c has an inclined shape in cross-sectional view, spreading from the lower surface 20b side to the upper surface 20a side of the light-emitting element 20. With such an inclined shape, light emitted from the side surface 20c can be reflected at the interface between the adhesive layer 50 and the light-reflecting member 30 and proceed to the upper surface of the translucent member 40. As a result, the light extraction efficiency of the light-emitting device 10 can be further improved. 【0045】(Second light-reflecting member 60) In the example shown in Figure 1B, the light-emitting device 10 is equipped with a second light-reflecting member 60. The second light-reflecting member 60, like the light-reflecting member 30, is a member that reflects light emitted from the light-emitting element 20. The second light-reflecting member 60 covers the lower surface 20b of the light-emitting element 20 and at least a portion of the adhesive layer 50 that is placed on the side surface 20c of the light-emitting element 20. The second light-reflecting member 60 is made of a different material from the light-reflecting member 30. For example, the second light-reflecting member 60 may be made of a material that does not contain silicon dioxide but contains resin and titanium dioxide. Alternatively, the second light-reflecting member 60 may be made of a material that contains silicon dioxide, resin and a light-reflecting material other than titanium dioxide. As for the resin included in the second light-reflecting member 60, as with the light-reflecting member 30, silicone resin, acrylic resin, epoxy resin, and phenyl resin can be used. The light-emitting device 10 is not limited to including the second light-reflective member 60, and may not include the second light-reflective member 60. If the light-emitting device 10 does not include the second light-reflective member 60, for example, the light-reflective member 30 covers the side surface of the light-transmitting member 40, the side surface 20c of the light-emitting element 20, at least a portion of the adhesive layer 50 placed on the side surface 20c of the light-emitting element 20, and the lower surface 20b of the light-emitting element 20. 【0046】 (Method for Manufacturing the Light-Emitting Device 10) An example of a method for manufacturing the light-emitting device 10 according to Embodiment 1 will be described using Figures 4A to 4F. For the sake of simplicity, the second light-reflecting member 60 and the protective element 80 shown in Figure 1B are omitted from Figures 4A to 4F. The method for manufacturing the light-emitting device 10 includes: a mixing step of preparing a mixture containing a prepolymer, silica sol, and a solvent; a coating step of coating the mixture onto the side surface 20c of the light-emitting element 20; and a curing step of curing the mixture to form a light-reflecting member 30. Furthermore, prior to the coating step, the method may include: a mounting step of arranging the light-emitting element 20 on a wiring board 70; and a light-transmitting member arrangement step of arranging the light-transmitting member 40 on the upper surface 20a of the light-emitting element 20. Each step will be described in detail below. 【0047】(Step 1: Mixing Step) Figure 4A illustrates the mixing step for preparing a mixture containing a prepolymer 301, silica sol 302, and solvent 303. The prepolymer 301, silica sol 302, and solvent 303 are placed in a container 305 and mixed to obtain a mixture 300. The light-reflective member 30 is obtained by curing the mixture 300 in a later step (curing step). 【0048】 The mixing procedure preferably involves first mixing the prepolymer 301 and solvent 303 in a container 305 at room temperature (approximately 25 degrees Celsius), and finally adding and mixing the silica sol 302. The water and ethanol contained in the silica sol 302 generate heat during mixing, causing the solvent 303 to evaporate and increasing the thixotropy of the resulting mixture 300. By adding the silica sol 302 to the container 305 last in the mixing process, the timing of the heat generation is delayed as much as possible, reducing the amount of solvent evaporation and thus minimizing the increase in the thixotropy of the mixture 300. 【0049】 The mixture 300 may further contain one or more light-reflective materials 304 selected from the group consisting of titanium oxide, zirconium oxide, and aluminum oxide. The light-reflective material is, for example, in powder form. The light-reflective material 304 is placed in the container 305 before the silica sol 302. That is, it is preferable to mix the solvent 303, prepolymer and light-reflective material 304 in the container 305, and then add and mix the silica sol 302, which can reduce the thixotropy of the mixture 300. The light-reflective material 304 may be placed in the container 305 at the same time as the prepolymer 301 and solvent 303, or the prepolymer 301, solvent 303 and light-reflective material 304 may be placed in the container 305 in any order. 【0050】 Similarly, when mixing in other additives, it is preferable to place the other additives in container 305 before the silica sol 302 for the same reasons. The other additives may be placed in container 305 at the same time as the prepolymer 301, solvent 303, and light-reflective material 304, or they may be placed in container 305 in any order. 【0051】The prepolymer 301 is in a state prior to polymerization and can take any shape, such as particulate, lumpy, or amorphous. Suitable prepolymers for the prepolymer 301 are organic materials such as dimethyl silicone resin, phenyl silicone resin, acrylic resin, and epoxy resin. 【0052】 The average particle size of the silica particles contained in silica sol 302 may be 100 nm or less. The average particle size of the silica particles in the silica sol is defined as the median value (D50) of the volume-based particle size distribution determined by dynamic light scattering (DLS). The average particle size of the silica particles contained in silica sol 302 may be calculated by measurement, or, if commercially available silica sol is used, the average particle size of the silica particles provided by the distributor may be used. 【0053】 The silica particles contained in the silica sol 302 may be solid or hollow. Using hollow silica particles can lower the refractive index of the light-reflective member 30. This can improve the reflectivity of the light-reflective member 30. 【0054】 Hollow silica particles have the following three characteristics. Therefore, if it is unclear whether a silica particle is solid or hollow, it can be determined whether it is hollow or not by comparing it with known solid silica particles and checking whether it has these characteristics. Note that it is not necessary to check all three characteristics below; checking one or more characteristics is sufficient. 1. High transmittance: Because hollow silica particles have a hollow interior, they have less light attenuation and higher transmittance compared to solid silica particles. 2. High scattering: Hollow silica particles have a high scattering probability because there are many silica-air interfaces within the particle, and more light is diffused compared to solid silica particles. 3. Low reflectivity: Because hollow silica particles take in a large amount of light internally, they have lower reflectivity compared to solid silica particles. 【0055】The solvent 303 (dispersion) is preferably one that does not easily cause the prepolymer 301 to aggregate, or one that can dissolve the prepolymer 301. For example, t-butyl alcohol, 2-butanol, and methanol can be used as the solvent 303. Since OH groups are present on the surface of the silica particles in the silica sol 302, the silica particles will aggregate or bond together if the solvent 303 is not used. By using the solvent 303, the aggregation of silica particles can be suppressed and dispersed in the mixture 300. When the solvent 303 evaporates, the silica particles will aggregate, and as shown in Figure 3, it is thought that multiple silica particles P2 will exist in an aggregated state, surrounded by multiple prepolymer particles P1. 【0056】 In the mixture 300, the blending ratio of the prepolymer 301 to the silica particles in the silica sol 302 is preferably such that the amount of silica particles is 5 parts by mass or more and 30 parts by mass or less per 100 parts by mass of the prepolymer. Including 5 parts by mass or more of silica particles effectively reduces the crack occurrence of the light-reflective member 30. By having 30 parts by mass or less, the thixotropy of the mixture 300 can be sufficiently reduced. 【0057】 (Step 2: Mounting Process) Figure 4B illustrates the mounting process for arranging the light-emitting element 20 on the wiring board 70. The light-emitting element 20 comprises, for example, a substrate 24, a semiconductor layer 21, and electrodes 25 in that order from the upper surface 20a to the lower surface 20b. In the example shown in Figure 1B, the wiring board 70 has upper surface wiring 71 on the upper surface side and lower surface wiring 72 on the lower surface side. In the mounting process, the electrodes 25 of the light-emitting element 20 are fixed to the upper surface wiring 71 of the wiring board 70 by a bonding member 90. 【0058】(Step 3: Translucent Member Placement Step) Figures 4C and 4D illustrate the translucent member placement step in which the translucent member 40 is placed on the upper surface 20a of the light-emitting element 20. In the example shown in Figures 1A and 4D, the translucent member 40 is larger than the light-emitting element 20 when viewed from above. As shown in Figure 4C, a resin adhesive 500 is placed on the upper surface 20a of the light-emitting element 20, and the translucent member 40 is placed on top of it. The resin adhesive 500 is extruded from between the upper surface 20a of the light-emitting element 20 and the translucent member 40 and spreads to the side surface 20c of the light-emitting element 20. In the example shown in Figure 4D, the resin adhesive 500 has spread from the lower edge 40e of the translucent member 40 to the side surface 20c of the light-emitting element 20. By curing the resin adhesive 500, an adhesive layer 50 is formed. 【0059】 Alternatively, the translucent member 40 may be placed on the upper surface 20a of the light-emitting element 20 without placing the adhesive layer 50. In this case, the translucent member 40 is directly bonded to the light-emitting element 20. When the translucent member 40 is directly bonded to the light-emitting element 20, direct bonding methods such as compression bonding, sintering, surface activation bonding, atomic diffusion bonding, and hydroxyl group bonding can be used. 【0060】 (Step 4: Coating Step) Figure 4E illustrates the coating step in which the mixture 300 is applied to the side surface 20c of the light-emitting element 20. The mixture 300 can be applied to the side surface 20c of the light-emitting element 20 by known methods such as dropping, coating, electrostatic spraying, compression molding, and transfer molding. In the example shown in Figure 4E, the mixture 300 indirectly coats the side surface 20c of the light-emitting element 20 via the adhesive layer 50. That is, the mixture 300 directly covers the side surface 50c of the adhesive layer 50. The mixture 300 further covers the lower surface 20b of the light-emitting element 20 and covers the side surface 40c of the light-transmitting member 40. The mixture 300 may or may not cover the upper surface 40a of the light-transmitting member 40. If the mixture 300 covers the upper surface 40a of the translucent member 40, for example, the mixture 300 (or the light-reflecting member 30 after the mixture 300 has hardened) is removed by grinding until the upper surface 40a of the translucent member 40 is exposed. 【0061】(Step 5: Curing Step) Figure 4F illustrates the curing step in which the mixture 300 is cured to form the light-reflective member 30. The mixture 300 is cured by ultraviolet irradiation or heating. As a result, a solid light-reflective member 30 is obtained. 【0062】 The curing process preferably includes a first heat treatment in which the mixture 300 is heat-treated in a temperature range of 60°C to 90°C, and a second heat treatment in which the mixture is heat-treated thereafter in a temperature range of 140°C to 180°C. The first heat treatment may be referred to as "low-temperature heat treatment." The first heat treatment slowly volatilizes the solvent contained in the mixture 300 by setting the heating temperature low. The first heat treatment can reduce the occurrence of voids in the light-reflective member 30. The heating temperature in the first heat treatment may be referred to as the "first heating temperature." The first heating temperature is preferably set to a temperature close to the boiling point of the solvent used. For example, the boiling point of t-butyl alcohol is 82.2°C, the boiling point of 2-butanol is 99.4°C, and the boiling point of methanol is 64.7°C, so they can be volatilized by heating at a first heating temperature in the temperature range of 60°C to 90°C. 【0063】 The second heat treatment is sometimes referred to as "high-temperature heat treatment." In the second heat treatment, the heating temperature is raised to a range of 140°C to 180°C, close to 150°C, in order to prevent the silicone resin contained in the light-reflecting member 30 from oxidizing due to heat at the junction temperature Tj = 150°C in the reliability test. The heating temperature in the second heat treatment is sometimes referred to as the "second heating temperature." 【0064】An example of the heat treatment conditions (i) to (v) in the curing process is shown below. (i) Store at 25°C for 24 hours. (ii) Heat to a first heating temperature of 60°C to 90°C at a heating rate that increases from 25°C to 60°C in 30 minutes. (iii) Hold at the first heating temperature for 8 hours to perform the first heat treatment. (iv) Heat to a second heating temperature of 140°C to 180°C at a heating rate that increases to 150°C in 24 hours. (v) Hold at the second heating temperature for 4 hours to perform the second heat treatment. 【0065】 Depending on the type of prepolymer used, curing can be performed using a different curing method without heat treatment. For example, when a UV-curable polymer is used as the prepolymer, the curing process is carried out by irradiating the mixture 300 with ultraviolet light to cure the prepolymer in the mixture 300 and form the light-reflective member 30. In another example, when a prepolymer that cures by volatilizing the solvent in the mixture 300 (i.e., a dry-type polymer) is used, if the boiling point of the solvent is low, the solvent can be removed from the mixture 300 (i.e., volatilized) in a temperature range of room temperature or higher but less than 50°C to cure the prepolymer in the mixture 300 and form the light-reflective member 30. 【0066】 High-temperature operation tests and high-temperature, high-humidity operation tests were performed on samples of light-emitting devices fabricated under the following conditions. 【0067】 Multiple test light-emitting devices 10 were manufactured using the procedure described in the manufacturing method of the light-emitting device 10 described in Embodiment 1. The components were as follows: ・Light-emitting element 20: Blue light-emitting diode (emission peak wavelength λ = 430-490 nm, square with sides of 1000 μm when viewed from above) ・Translucent member 40: Yttrium aluminum perovskite (YAlO ３ :YAP) and Yttrium Aluminum Garnet (Y ３ Al ５ O １２:YAG) plate-shaped member (square with sides of 1150 μm or 1100 μm when viewed from above) Mixture 300: Mixture prepared by mixing a silicone resin prepolymer, titanium dioxide, and silica sol. The amount of silica sol blended was such that the amount of silica particles in the silica sol was as shown in Tables 1 and 2 for every 100 parts by weight of the silicone resin prepolymer. The amount of titanium dioxide, a light-reflective material, was 30 parts by weight per 100 parts by weight of the silicone resin prepolymer. The average particle size of the silica particles contained in the silica sol was 12 nm. 【0068】 After coating the sides of the light-emitting element 20 and the light-transmitting member 40 with the mixture 300, the mixture 300 was cured by a first heating step (60°C, 8 hours) and a second heating step (150°C, 4 hours) to form the light-reflecting member 30. In this way, a test light-emitting device 10 was obtained. 【0069】 (1. High-Temperature Operation Test) The test light-emitting device 10 was energized with 500 mA in a high-temperature environment of 125°C. After energization times of 0 hours (before the start of the test), 700 hours, 900 hours, 1000 hours, 1200 hours, and 1500 hours, the lit light-emitting device 10 was observed at 100x magnification using a measuring microscope or metallurgical microscope to check whether cracks had occurred in the light-reflecting member 30. The presence or absence of cracks was determined based on the external shape of the translucent member 40 as seen from above before the start of the test, and whether cracks had occurred at the interface between the translucent member 40 and the light-reflecting member 30. Sample No. 1 of the light-emitting device 10 had a sample size of N=2, and Samples No. 2 and 3 of the light-emitting device 10 had a sample size of N=4, and the number of those in which cracks occurred was counted. 【0070】Table 1 shows the results of the high-temperature operation test. No cracks occurred in any of the light-emitting devices 10 of sample No. 1 (no silica sol added), sample No. 2 (silica sol added, 10 parts by weight of silica particles), and sample No. 3 (silica sol added, 20 parts by weight of silica particles). It was confirmed that no cracks occurred in the light-reflecting member 30 of any of the light-emitting devices 10 of samples No. 1 to 3 when used in a high-temperature environment. 【0071】 【0072】 (2. High Temperature and High Humidity Operation Test) The test light-emitting device 10 was energized at 1200mA in a high temperature and high humidity environment of 85°C and 85% humidity. After energization times of 0 hours (before the start of the test), 700 hours, 900 hours, 1000 hours, 1200 hours, and 1500 hours, the lit light-emitting device 10 was observed at 100x magnification using a measuring microscope or metallurgical microscope to check whether cracks had occurred in the light-reflective member 30. The method of checking for cracks and the number of light-emitting devices 10 samples (Nos. 1 to 3) were the same as in the high temperature operation test. 【0073】 Table 2 shows the results of the high-temperature, high-humidity operation test. For sample No. 1 (no silica sol added), cracks developed in both samples of the light-emitting device 10 after 900 hours of operation (crack occurrence rate 100%). For sample No. 2 (silica sol added, 10 parts by weight of silica particles), cracks developed in one of the four samples of the light-emitting device 10 after 900 hours of operation (crack occurrence rate 25%). For sample No. 3 (silica sol added, 20 parts by weight of silica particles), cracks developed in one of the four samples of the light-emitting device 10 after 1200 hours of operation (crack occurrence rate 25%), and cracks developed in three of the four samples after 1500 hours of operation (crack occurrence rate 75%). 【0074】These results show that the light-reflecting member 30 made from a mixture with added silica sol had a reduced crack occurrence rate compared to the light-reflecting member 30 made from a mixture without added silica sol. Under more severe operating conditions, such as high temperature and high humidity, the light-emitting devices 10 of samples No. 2 and No. 3 were less prone to cracking in the light-reflecting member 30, and in particular, the light-emitting device 10 of sample No. 2 was confirmed to be the least prone to cracking. 【0075】 【0076】 Figures 5A to 5C show photographs of the light-emitting devices 10 of samples No. 1 to 3, which developed cracks after 1500 hours of high-temperature, high-humidity operation testing. In each figure, the upper image shows the light-emitting device 10 when lit, and the lower image shows it when turned off. It was confirmed that the number of cracks occurring in the light-reflecting member 30 of samples No. 2 and No. 3, shown in Figures 5B and 5C, was reduced compared to the light-emitting device 10 of sample No. 1, shown in Figure 5A. 【0077】 Figure 6 shows a graph of the change in relative luminescence of the light-emitting devices 10 for samples No. 1 to 3 with respect to the energizing time during a high-temperature, high-humidity operation test. The relative luminescence (%) is the luminescence when the luminescence at 0 hours of energizing (before the start of energizing) is set to 100%. The luminescence of blue light that does not pass through the light-transmitting member 40 is lower than the luminescence of white light that has passed through the light-transmitting member 40 and undergone wavelength conversion. Therefore, if a crack occurs and blue light leaks out from that crack, the luminescence of the light-emitting device 10 decreases. In other words, the graph of the change in relative luminescence with respect to the energizing time serves as an indirect indicator of the presence and frequency of cracks. In a high-temperature, high-humidity operation test, if the relative luminescence at 1500 hours of energizing is 90% or higher, it can be considered that the occurrence of cracks has been sufficiently reduced. 【0078】The graph for sample No. 1 shows that the luminosity began to decrease significantly after 600 hours of energization, and at 1500 hours of energization, the relative luminosity fell to approximately 86%. The graph for sample No. 2 showed no significant decrease in luminosity until 1000 hours of energization, and even at 1500 hours of energization, the relative luminosity remained high at approximately 94%. The graph for sample No. 3 showed a significant decrease in luminosity starting at 900 hours of energization, but even at 1500 hours of energization, the relative luminosity remained high at approximately 92.5%. 【0079】 The disclosures herein include the following embodiments: [Subject 1] A light-emitting element, and a light-reflective member that reflects light emitted from the light-emitting element, wherein the light-reflective member comprises a resin and silicon oxide, and the light-reflective member is solid ２９ A light-emitting device wherein the Si NMR spectrum has a first peak at a chemical shift value of approximately -97 ppm. [Item 2] The light-emitting device according to Item 1, wherein the silicon dioxide content in the light-reflecting member is 0.5% by mass or more and 3% by mass or less. [Item 3] The resin is a silicone resin, and the solid ２９ The Si NMR spectrum has a second peak at a chemical shift value of approximately -106 ppm, and the peak intensity of the second peak is I ２ The peak intensity I of the first peak relative to １A light-emitting device according to item 1 or 2, wherein the ratio is 0.1 times or more and 0.5 times or less. [Item 4] A light-emitting device according to any one of items 1 to 3, wherein the light-reflecting member further comprises one or more light-reflecting materials selected from the group consisting of titanium oxide, zirconium oxide, and aluminum oxide. [Item 5] A light-emitting device according to any one of items 1 to 4, wherein the light-emitting element has a lower surface, an upper surface located opposite to the lower surface, and a side surface located between the lower surface and the upper surface, and the light-reflecting member covers the side surface. [Item 6] A light-emitting device according to item 5, further comprising a translucent member disposed on the upper surface side of the light-emitting element, wherein the light-reflecting member covers the side surface of the translucent member. [Item 7] A method for manufacturing a light-emitting device comprising a light-emitting element and a light-reflecting member that reflects light emitted from the light-emitting element, comprising: a mixing step of preparing a mixture comprising a prepolymer, a silica sol, and a solvent; a coating step of coating the side surface of the light-emitting element with the mixture; and a curing step of curing the mixture to form the light-reflecting member. [Item 8] The method for manufacturing a light-emitting device according to Item 7, wherein the mixture is blended with silica particles from the silica sol in an amount of 5 to 30 parts by mass per 100 parts by mass of the prepolymer. [Item 9] The method for manufacturing a light-emitting device according to Item 7 or 8, wherein in the mixing step, the solvent and the prepolymer are mixed, and then the silica sol is added and mixed. [Item 10] The method for manufacturing a light-emitting device according to any one of Items 7 to 9, wherein the mixture further comprises one or more light-reflecting materials selected from the group consisting of titanium oxide, zirconium oxide, and aluminum oxide, and in the mixing step, the solvent, the prepolymer, and the light-reflecting material are mixed, and then the silica sol is added and mixed. [Claim 11] The method for manufacturing a light-emitting device according to any one of Claims 7 to 10, wherein the curing step comprises a first heat treatment in which the mixture is heat-treated in a temperature range of 60°C to 90°C, and a second heat treatment in which the mixture is heat-treated thereafter in a temperature range of 140°C to 180°C. [Claim 12] The method for manufacturing a light-emitting device according to any one of Claims 7 to 11, wherein the average particle size of the silica particles contained in the silica sol is less than 100 nm. 【0080】 The light-emitting device of the present invention can be used as a backlight source for liquid crystal displays, various lighting fixtures, large displays, and other light sources. 【0081】 This application claims priority under Japanese Patent Application No. 2024-215888, filed in Japan on 10 December 2024, the entirety of which is incorporated herein by reference. 【0082】 10 Light-emitting device 20 Light-emitting element 30 Light-reflective member (first light-reflective member) 40 Light-transmitting member 50 Adhesive layer 60 Second light-reflective member 70 Wiring board 80 Protective element 90, 91 Bonding member 300 Mixture 301 Prepolymer 302 Silica sol 303 Solvent 304 Light-reflective material 305 Container

Claims

1. A light-emitting element and a light-reflecting member that reflects light emitted from the light-emitting element, wherein the light-reflecting member comprises a resin and silicon dioxide, and the light-reflecting member is solid ２９ The Si NMR spectrum of the light-emitting device has a first peak at a chemical shift value of approximately -97 ppm.

2. The light-emitting device according to claim 1, wherein the silicon dioxide content in the light-reflective member is 0.5% by mass or more and 3% by mass or less.

3. The resin is a silicone resin, and the solid ２９ The Si NMR spectrum has a second peak at a chemical shift value of approximately -106 ppm, and the peak intensity of the second peak is I ２ The peak intensity I of the first peak relative to １ The light-emitting device according to claim 1 or 2, wherein the ratio is 0.1 times or more and 0.5 times or less.

4. The light-emitting device according to any one of claims 1 to 3, wherein the light-reflective member further comprises one or more light-reflective materials selected from the group consisting of titanium oxide, zirconium oxide, and aluminum oxide.

5. The light-emitting device according to any one of claims 1 to 4, wherein the light-emitting element has a lower surface, an upper surface located opposite to the lower surface, and a side surface located between the lower surface and the upper surface, and the light-reflective member covers the side surface.

6. The light-emitting device according to claim 5, further comprising a light-transmitting member disposed on the upper side of the light-emitting element, wherein the light-reflecting member covers the side surface of the light-transmitting member.

7. A method for manufacturing a light-emitting device, comprising a light-emitting element and a light-reflecting member that reflects light emitted from the light-emitting element, comprising: a mixing step of preparing a mixture comprising a prepolymer, silica sol, and a solvent; a coating step of coating the side surface of the light-emitting element with the mixture; and a curing step of curing the mixture to form the light-reflecting member.

8. The method for manufacturing a light-emitting device according to claim 7, wherein the mixture contains 5 to 30 parts by mass of silica particles from the silica sol per 100 parts by mass of the prepolymer.

9. The method for manufacturing a light-emitting device according to claim 7 or 8, wherein in the mixing step, the solvent and the prepolymer are mixed, and then the silica sol is added and mixed.

10. The method for manufacturing a light-emitting device according to any one of claims 7 to 9, wherein the mixture further comprises one or more light-reflective materials selected from the group consisting of titanium oxide, zirconium oxide, and aluminum oxide, and in the mixing step, after mixing the solvent, the prepolymer, and the light-reflective material, silica sol is added and mixed.

11. The method for manufacturing a light-emitting device according to any one of claims 7 to 10, wherein the curing step comprises a first heat treatment in which the mixture is heat-treated in a temperature range of 60°C to 90°C, and a second heat treatment in which the mixture is heat-treated thereafter in a temperature range of 140°C to 180°C.

12. A method for manufacturing a light-emitting device according to any one of claims 7 to 11, wherein the average particle size of the silica particles contained in the silica sol is less than 100 nm.

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