Resistive memory device based on difference in ion mobility and method for manufacturing same

Abstract

The present invention relates to a resistive memory device based on a difference in ion mobility in which a constrained filament path is formed on the basis of a difference in metal ion mobility, and a method for manufacturing same. The resistive memory device comprises: a lower electrode; a resistive switching layer formed on the lower electrode, wherein a resistance switching of the device is induced by formation and rupture of a filament; an upper electrode formed on the resistive switching layer and configured to provide metal ions for filament formation in response to an applied voltage or current; and at least one fast ion-migration electrolyte layer formed within the resistive switching layer, the fast ion-migration electrolyte layer being formed of a material having a lower diffusion activation energy of metal ions than that of the resistive switching layer and formed orthogonally to the upper electrode to form a fast ion-migration path.

Description

Resistance change memory device based on ion mobility difference and method for manufacturing the same

[0001] The present invention relates to a resistance change memory device based on a difference in ion mobility and a method for manufacturing the same, and more specifically, to a resistance change memory device based on a difference in ion mobility and a method for manufacturing the same in which a filament path of a limited shape is formed based on a difference in the mobility of metal ions.

[0002] Cross-reference regarding related applications

[0003] This application claims priority to Korean Patent Application No. 10-2024-0182945 filed on December 10, 2024, the entire contents of which are incorporated by reference into this application.

[0004] Explanation of government-supported research and development

[0005] The present invention was carried out as part of the "Artificial Brain Convergence Research Project (Research Project Name: Korea Institute of Science and Technology Research Operational Expense Support (Major Project Expense), Project No.: 2E32960)" and "Development of Next-Generation Computing Semiconductors for Ultra-Large Computation Processing (Research Project Name: National Science and Technology Research Council Research Operational Expense Support (Major Project Expense), Project No.: GTL24041-000)" supported by the Ministry of Science and ICT and conducted by the Korea Institute of Science and Technology.

[0006] Resistive Random Access Memory (ReRAM), a type of resistive change memory device, is a non-volatile memory that stores data using electrical resistance states. The resistance change of a memory cell is controlled by applying voltage or current and is mainly divided into the following two states.

[0007] Low-Resistance State (LRS): Data represented as 1

[0008] High-Resistance State (HRS): Data is represented as 0

[0009] The transition between the two states can be achieved by the following physical mechanism.

[0010] Conduction Filament Formation / Breakdown: When voltage is applied, metal ions or oxygen vacancies within the oxide move to form or break a conduction path (filament).

[0011] Interface effect: Voltage induces electron or ion movement at the interface of a material, changing the resistance state.

[0012] FIG. 1 is a diagram illustrating a conventional general ReRAM, wherein a conventional general ReRAM is composed of a lower electrode, a resistance change layer in which a conductive filament is formed to induce a change in the resistance of the device, and an upper electrode that provides metal ions for filament formation according to an applied voltage or current.

[0013] These ReRAMs operate based on the formation and destruction of conductive filaments; however, since the movement paths of metal ions are not restricted during filament formation in the resistance change layer, filament formation paths exist based on a random stochastic distribution.

[0014] As previously explained, in ReRAM, conductive filaments are formed by the movement of metal ions or oxygen vacancies within the resistance change layer; however, during the repetitive switching process, the filament formation path is not reformed to the exact same location, size, and shape, but rather forms randomly with slight variations near the previous formation path.

[0015] Therefore, conventional ReRAMs have a dispersion problem in which switching characteristics appear differently during repetitive device operation.

[0016] The present invention has been devised to solve the conventional problems described above, and aims to provide a resistance change memory device based on ion mobility difference and a method for manufacturing the same, which can minimize switching dispersion by forming a limited type of filament path based on the mobility difference of metal ions.

[0017] A resistance change memory device based on a difference in ion mobility according to the present invention for achieving the aforementioned purpose comprises: a lower electrode; a resistance change layer formed on the upper portion of the lower electrode, wherein a change in the resistance of the device is induced according to filament formation and destruction; an upper electrode formed on the upper portion of the resistance change layer, wherein metal ions for filament formation are provided according to an applied voltage or current; and at least one high-speed ion movement electrolyte layer formed within the resistance change layer with a material having a lower diffusion activation energy of metal ions compared to the resistance change layer, and formed orthogonally to the upper electrode to form a high-speed ion movement path.

[0018] In addition, in the resistance change memory device based on the difference in ion mobility according to the present invention, the high-speed ion-moving electrolyte layer is characterized by being formed such that one end contacts the upper electrode and the other end contacts the lower electrode.

[0019] In addition, in the resistance change memory device based on the difference in ion mobility according to the present invention, the high-speed ion-movement electrolyte layer is formed such that one end contacts the upper electrode and the other end faces the lower electrode, and is formed to have a depth of more than half of the resistance change layer.

[0020] In addition, in the resistance change memory device based on ion mobility difference according to the present invention, the resistance change layer is formed of amorphous silicon (a-Si), and the high-speed ion movement electrolyte layer is formed of a chalcogenide material.

[0021] In addition, in the resistance change memory device based on the difference in ion mobility according to the present invention, the high-speed ion-moving electrolyte layer is characterized by being formed to have a width of approximately 10 nm or less.

[0022] In addition, the method for manufacturing a resistance change memory device based on a difference in ion mobility according to the present invention for achieving the aforementioned purpose comprises: a lower electrode forming step of forming a lower electrode; a resistance change layer forming step of forming a resistance change layer on top of the lower electrode, wherein a resistance change of the device is induced by filament formation and destruction; a high-speed ion movement electrolyte layer forming step of forming at least one high-speed ion movement electrolyte layer orthogonally to the upper electrode within the resistance change layer, wherein the high-speed ion movement electrolyte layer is formed by a material having a diffusion activation energy of metal ions lower than that of the resistance change layer and forms a high-speed ion movement path; and an upper electrode forming step of forming an upper electrode on top of the resistance change layer, wherein the upper electrode provides metal ions for filament formation according to an applied voltage or current.

[0023] In addition, in the method for manufacturing a resistance change memory device based on a difference in ion mobility according to the present invention, the step of forming a high-speed ion-moving electrolyte layer comprises: a step of forming a plurality of nanodots on the upper surface of the resistance change layer; and a step of forming a high-speed ion-moving electrolyte layer that forms a high-speed ion-moving path by depositing a material having a lower diffusion activation energy of metal ions than that of the resistance change layer on the upper surface of the resistance change layer on which the nanodots are formed.

[0024] In addition, in the method for manufacturing a resistance change memory device based on a difference in ion mobility according to the present invention, the step of forming a high-speed ion-movement electrolyte layer comprises: a step of forming a photoresist on top of the resistance change layer; a step of forming a photoresist pattern by exposing the resistance change layer by forming a photomask formed as a nano-size pattern on top of the photoresist, and then exposing and developing from the top; a step of forming a high-speed ion-movement electrolyte layer that forms a high-speed ion movement path by ion implanting a material having a lower diffusion activation energy of metal ions than that of the resistance change layer into the exposed resistance change layer using the photoresist pattern as an ion implantation mask; and a step of removing the photoresist pattern.

[0025] In addition, in the method for manufacturing a resistance change memory device based on a difference in ion mobility according to the present invention, the step of forming a high-speed ion-mobility electrolyte layer comprises: a step of forming a photoresist on top of the resistance change layer; a step of forming a photomask formed as a nano-size pattern on top of the photoresist, and then exposing and developing from the top to form a photoresist pattern that exposes the resistance change layer; a step of etching the exposed resistance change layer using the photoresist pattern as an etching mask; a step of depositing a material having a lower diffusion activation energy of metal ions than that of the resistance change layer in the etched area; and a step of removing the photoresist pattern.

[0026] In addition, in the method for manufacturing a resistance change memory device based on a difference in ion mobility according to the present invention, the high-speed ion-moving electrolyte layer is characterized by being formed such that one end contacts the upper electrode and the other end contacts the lower electrode.

[0027] In addition, in the method for manufacturing a resistance change memory device based on a difference in ion mobility according to the present invention, the high-speed ion-movement electrolyte layer is formed such that one end contacts the upper electrode and the other end faces the lower electrode, and is formed to have a depth of more than half that of the resistance change layer.

[0028] In addition, in the method for manufacturing a resistance change memory device based on a difference in ion mobility according to the present invention, the resistance change layer is formed of amorphous silicon (a-Si), and the high-speed ion movement electrolyte layer is formed of a chalcogenide material.

[0029] In addition, in the method for manufacturing a resistance change memory device based on ion mobility difference according to the present invention, the high-speed ion-mobility electrolyte layer is characterized by being formed to have a width of approximately 10 nm or less.

[0030] Specific details of other embodiments are included in "Specific details for implementing the invention" and the attached "drawings".

[0031] The advantages and / or features of the present invention and the methods for achieving them will become clear by referring to the various embodiments described below in detail together with the accompanying drawings.

[0032] However, it should be understood that the present invention is not limited to the configurations of each embodiment disclosed below, but may be implemented in various different forms, and that each embodiment disclosed in this specification is provided merely to make the disclosure of the present invention complete and to fully inform those skilled in the art of the scope of the present invention, and that the present invention is defined only by the scope of each claim of the claims.

[0033] According to the present invention, switching dispersion can be minimized by forming a filament path of a limited shape based on the mobility difference of metal ions.

[0034] In addition, since resistance change memory devices based on the mobility difference of metal ions can be formed through a relatively simple process, manufacturing costs can be lowered.

[0035] Figure 1 is a diagram illustrating a conventional general ReRAM.

[0036] FIGS. 2 and FIGS. 3 are cross-sectional perspective views schematically showing the configuration of a resistance change memory device based on ion mobility difference according to one embodiment of the present invention.

[0037] FIGS. 4 and FIGS. 5 are drawings for explaining the low-speed ion movement path and the high-speed ion movement path applied to the present invention.

[0038] FIG. 6 is a diagram illustrating a method for manufacturing a resistance change memory device based on ion mobility difference according to an embodiment of the present invention.

[0039] FIG. 7 is a diagram illustrating the high-speed ion-mobility electrolyte layer formation step (S300) of FIG. 6 according to one embodiment of the present invention.

[0040] FIG. 8 is a diagram illustrating the high-speed ion-mobility electrolyte layer formation step (S300) of FIG. 6 according to another embodiment of the present invention.

[0041] FIG. 9 is a diagram illustrating the high-speed ion-mobility electrolyte layer formation step (S300) of FIG. 6 according to another embodiment of the present invention.

[0042] FIG. 10 is a diagram exemplarily showing the switching characteristics of a resistance change memory device according to the prior art.

[0043] FIG. 11 is a diagram exemplarily showing the switching characteristics of a resistance change memory device according to the present invention.

[0044] FIG. 12 is a diagram exemplarily showing the retention characteristics of a resistance change memory device according to the prior art.

[0045] FIG. 13 is a diagram exemplarily showing the retention characteristics of a resistance change memory device according to the present invention.

[0046] FIG. 14 is a diagram exemplarily showing the endurance characteristics of a resistance change memory device according to the prior art.

[0047] FIG. 15 is a diagram exemplarily showing the endurance characteristics of a resistance change memory device according to the present invention.

[0048] Before describing the present invention in detail, it should be understood that the terms and words used in this specification should not be interpreted as being limited to their ordinary or dictionary meanings, and that the inventor of the present invention may appropriately define and use the concepts of various terms to best describe their invention, and furthermore, that these terms and words should be interpreted in a meaning and concept consistent with the technical spirit of the present invention.

[0049] In other words, it should be understood that the terms used in this specification are used merely to describe preferred embodiments of the present invention and are not intended to specifically limit the content of the present invention, and that these terms are defined in consideration of various possibilities of the present invention.

[0050] In addition, it should be noted that in this specification, singular expressions may include plural expressions unless the context clearly indicates a different meaning, and that even if they are expressed in a similarly plural form, they may include a singular meaning.

[0051] Throughout this specification, where it is stated that a component "includes" another component, unless specifically stated otherwise, this may mean that it does not exclude any other component but may include any other component.

[0052] Furthermore, it should be noted that in cases where it is stated that a component "exists inside or is installed in connection with" another component, this component may be installed in direct connection or contact with the other component, or it may be installed at a certain distance apart, and in the case where it is installed at a certain distance apart, there may be a third component or means for fixing or connecting the component to the other component, and a description of this third component or means may be omitted.

[0053] On the other hand, if it is stated that one component is "directly connected" or "directly connected" to another component, it should be understood that there is no third component or means.

[0054] Likewise, other expressions describing the relationship between each component, such as “between” and “right between”, or “adjacent to” and “directly adjacent to”, should be interpreted as having the same intent.

[0055] In addition, it should be understood that in this specification, terms such as “one side,” “other side,” “one side,” “other side,” “first,” “second,” etc., are used to clearly distinguish one component from another component, and that the meaning of the component is not restricted by such terms.

[0056] In addition, position-related terms such as "up," "down," "left," and "right" used in this specification should be understood as indicating the relative position of the corresponding component in the drawing, and unless an absolute position is specified, these position-related terms should not be understood as referring to an absolute position.

[0057] Furthermore, it should be understood that in the specification of the present invention, terms such as “…part,” “…unit,” “module,” and “device,” when used, refer to a unit capable of handling one or more functions or operations, and that this may be implemented in hardware or software, or a combination of hardware and software.

[0058] Furthermore, in specifying the reference numerals for each component of each drawing in this specification, the same component has the same reference numeral even if it is shown in different drawings; that is, the same reference numeral throughout the specification indicates the same component.

[0059] In the drawings attached to this specification, the size, location, connection relationships, etc., of each component constituting the present invention may be described in a partially exaggerated, reduced, or omitted manner for the convenience of explanation or to sufficiently clearly convey the concept of the present invention, and therefore, the proportions or scale may not be strictly accurate.

[0060] In addition, in describing the present invention below, detailed descriptions of components that are deemed to unnecessarily obscure the essence of the invention, such as known technologies including prior art, may be omitted.

[0061] Hereinafter, a resistance change memory device based on ion mobility difference and a method for manufacturing the same according to a preferred embodiment of the present invention will be described in detail with reference to the attached drawings.

[0062] FIGS. 2 and FIGS. 3 are cross-sectional perspective views schematically showing the configuration of a resistance change memory device based on ion mobility difference according to one embodiment of the present invention.

[0063] As illustrated in FIGS. 2 and 3, the resistance change memory element (100) according to the present invention may include a lower electrode (110), a resistance change layer (120), a high-speed ion-moving electrolyte layer (130), and an upper electrode (140).

[0064] In this configuration, the lower electrode (110) is an inert electrode and can be formed from any one of inert metals such as platinum (Pt), gold (Au), ruthenium (Ru), chromium (Cr), tungsten (W), iridium (Ir), palladium (Pd), rhodium (Rh), doped silicon (Si), titanium nitride (TiN), and tantalum nitride (TaN), but is not limited thereto.

[0065] The lower electrode (110) can be formed with a thickness of approximately 10 nm to 50 nm, but is not limited thereto.

[0066] The resistance change layer (120) can be formed on the upper part of the lower electrode (110).

[0067] The resistance change layer (120) can induce a change in the resistance of the device according to the formation and destruction of filaments.

[0068] The resistance change layer (120) is amorphous silicon, silicon nitride film (SiN x ), silicon oxide film (SiO x ), silicon oxynitride film (SiO x N y ), HfO2, ZrO2, Al2O3, Ta2O3, TiO2, NiO x , WO x It can be formed as any one of these, but is not limited thereto.

[0069] The resistance change layer (120) can be formed with a thickness of approximately 5 nm to 200 nm, but is not limited thereto.

[0070] At least one high-speed ion-moving electrolyte layer (130) can be formed within the resistance change layer (120).

[0071] The high-speed ion-movement electrolyte layer (130) has a diffusion activation energy (E) of metal ions compared to the resistance change layer (120). a It can be formed of a material with low ) and formed orthogonally to the upper electrode (140) to form a high-speed ion movement path. Here, it is desirable that the difference between the metal ion diffusion activation energy of the resistance change layer (120) and the metal ion diffusion activation energy of the high-speed ion movement electrolyte layer (130) be greater than that which prevents oxidized metal ions from diffusing into the resistance change layer (120). For example, it is desirable that the difference between the metal ion diffusion activation energy of the resistance change layer (120) and the metal ion diffusion activation energy of the high-speed ion movement electrolyte layer (130) be at least 0.3 to 0.5 eV.

[0072] The high-speed ion-mobility electrolyte layer (130) can be formed from chalcogenide materials such as germanium-selanide (Ag-GeSe2), silver-selanide (Ag2Se), silver-sulfide (Ag2S), Ag-GeS, Ag-As-Se, Ag-Te, etc., but is not limited thereto.

[0073] As shown in FIG. 2, the high-speed ion-moving electrolyte layer (130) can be formed such that one end contacts the upper electrode (140) and the other end contacts the lower electrode (110).

[0074] Additionally, as shown in FIG. 3, the high-speed ion-moving electrolyte layer (130) can be formed such that one end contacts the upper electrode (140) and the other end faces the lower electrode (110). At this time, it is preferable that the high-speed ion-moving electrolyte layer (130) be formed to have a depth of more than half that of the resistance change layer (120).

[0075] The high-speed ion-mobility electrolyte layer (130) can be formed to have a width of approximately 10 nm or less.

[0076] The upper electrode (140) can be formed on the upper part of the resistance change layer (120).

[0077] The upper electrode (140) can provide metal ions for filament formation depending on the applied voltage or current.

[0078] This upper electrode (140) is an active electrode and can be formed from an active metal such as silver (Ag), copper (Cu), silver-copper (Ag-Cu), nickel (Ni), ruthenium (Ru), titanium (Ti), etc., but is not limited thereto.

[0079] The upper electrode (140) can be formed with a thickness of approximately 10 nm to 100 nm, but is not limited thereto.

[0080] The operation of the resistance change memory element (100) according to the present invention will be described below.

[0081] When a positive voltage is applied to the upper electrode (140), the metal material forming the upper electrode (140) is oxidized, and the oxidized metal ions move along the electric field to the lower electrode (110) to accept electrons.

[0082] In the resistance change memory device (100) according to the present invention, a difference occurs between the metal ion mobility in the resistance change layer (120) and the metal ion mobility in the high-speed ion movement electrolyte layer (130).

[0083] This is the diffusion activation energy (E) of metal ions in the chalcogenide material forming the high-speed ion-movement electrolyte layer (130) compared to the amorphous silicon forming the resistance change layer (120). a This is because ) is very low; the higher the diffusion activation energy of metal ions, the slower the diffusion of metal ions, and the lower the diffusion activation energy of metal ions, the faster the diffusion of metal ions occurs.

[0084] Accordingly, as shown in FIG. 4, the diffusion of metal ions is slow in the resistance change layer (120) to form a low-speed ion movement path, and the diffusion of metal ions is fast in the high-speed ion movement electrolyte layer (130) to form a high-speed ion movement path.

[0085] Oxidized metal ions have a very high probability of drifting to a region with low diffusion activation energy, and this can apply to both vertical and horizontal directions (see Fig. 5).

[0086] Accordingly, the oxidized metal ions move to the high-speed ion-moving electrolyte layer (130) region in contact with the upper electrode (140), and the metal ions move only along the high-speed ion-moving path formed in the high-speed ion-moving electrolyte layer (130).

[0087] Due to the difference in metal ion mobility between the resistance change layer (120) and the high-speed ion movement electrolyte layer (130), a diffusion activation energy barrier for metal ions is formed laterally, thereby preventing horizontal diffusion.

[0088] Therefore, metal ions move along a limited high-speed ion transport path to form filaments, and the filament formation location can be restricted to the high-speed ion transport path.

[0089] In this way, by restricting the filament formation location to a high-speed ion movement path, switching dispersion can be reduced.

[0090] FIG. 6 is a diagram illustrating a method for manufacturing a resistance change memory device based on ion mobility difference according to an embodiment of the present invention.

[0091] First, a lower electrode (110) can be formed in step S100.

[0092] In the above-described step S100, the lower electrode (110) may be deposited, for example, through an electron beam deposition process, but is not limited thereto.

[0093] The lower electrode (110) formed through the above-described step S100 is an inert electrode and can be formed from an inert metal such as Pt, Au, Ru, Cr, W, Ir, Pd, Rh, and can be formed with a thickness of approximately 10 nm to 50 nm.

[0094] In step S200, a resistance change layer (120) can be formed on the upper part of the lower electrode (110) such that a change in the resistance of the device is induced according to the formation and destruction of a filament.

[0095] In the above-mentioned step S200, the resistance change layer (120) can be deposited through, for example, a Plasma Enhanced Chemical Vapor Deposition (PECVD) process, a Physical Vapor Deposition (PVD) process, a Chemical Vapor Deposition (CVD) process, but is not limited thereto.

[0096] The resistance change layer (120) formed through the above-described step S200 may be formed of amorphous silicon (a-Si), but is not limited thereto.

[0097] In addition, the resistance change layer (120) formed through the above-mentioned step S200 may be formed with a thickness of approximately 5 nm to 200 nm, but is not limited thereto.

[0098] In step S300, at least one high-speed ion-moving electrolyte layer (130) can be formed within the resistance change layer (120).

[0099] The high-speed ion-moving electrolyte layer (130) formed through the above-described step S300 can be formed of a material having a lower diffusion activation energy of metal ions compared to the resistance change layer (120), and can be formed orthogonally to the upper electrode (140) to form a high-speed ion-moving path.

[0100] The high-speed ion-mobility electrolyte layer (130) formed through the above-described step S300 can be formed from chalcogenide materials such as germanium-selanide (Ag-GeSe2), silver-selanide (Ag2Se), silver-sulfide (Ag2S), Ag-GeS, Ag-As-Se, Ag-Te, etc., but is not limited thereto.

[0101] The high-speed ion-mobility electrolyte layer (130) formed through the above-described step S300 can be formed to have a width of approximately 10 nm or less.

[0102] The high-speed ion-moving electrolyte layer (130) formed through the above-described step S300 can be formed such that one end contacts the upper electrode (140) and the other end contacts the lower electrode (110).

[0103] Additionally, the high-speed ion-moving electrolyte layer (130) formed through the above-described step S300 may be formed such that one end contacts the upper electrode (140) and the other end faces the lower electrode (110). At this time, it is preferable that the high-speed ion-moving electrolyte layer (130) be formed to have a depth of more than half that of the resistance change layer (120).

[0104] And in step S400, an upper electrode (140) can be formed on the upper part of the resistance change layer (120).

[0105] In the above-described step S400, the upper electrode (140) may be deposited, for example, on the resistance change layer (120) through an electron beam deposition process, but is not limited thereto.

[0106] The upper electrode (140) formed through the above-described step S400 may be formed of an active metal such as silver (Ag), copper (Cu), silver-copper (Ag-Cu), nickel (Ni), ruthenium (Ru), titanium (Ti), etc., but is not limited thereto.

[0107] In addition, the upper electrode (140) formed through the above-described step S400 may be formed with a thickness of approximately 10 nm to 100 nm, but is not limited thereto.

[0108] FIG. 7 is a diagram illustrating the high-speed ion-mobility electrolyte layer formation step (S300) of FIG. 6 according to one embodiment of the present invention.

[0109] First, in step S310, a plurality of nano dots (150) can be formed on the upper surface of the resistance change layer (120) formed through the above-mentioned step S200.

[0110] In the above-mentioned step S310, the nano dot (150) may be deposited, for example, through a sputtering or ion beam process, but is not limited thereto.

[0111] The nano dot (150) formed through the above-described step S310 may be formed of an inert metal such as the lower electrode (110), but is not limited thereto.

[0112] In step S315, a material having a lower metal ion diffusion activation energy compared to the resistance change layer (120) can be deposited on top of the resistance change layer (120) on which nano dots (150) are formed.

[0113] In the above-described step S315, a material having a lower metal ion diffusion activation energy compared to the resistance change layer (120) can be deposited through a PVD (Physical Vapor Deposition) process, but is not limited thereto.

[0114] The material deposited on the upper surface of the resistance change layer (120) on which the nano dots (150) are formed in step S315 above may be formed of small particles in nanometer units.

[0115] When a material having a lower metal ion diffusion activation energy than the resistance change layer (120) is deposited on the upper surface of the resistance change layer (120) on which the nano dots (150) are formed in step S315 above, the deposited material can diffuse or penetrate into the exposed resistance change layer (120) using the nano dots (150) as a mask, and if the resistance change layer (120) has an amorphous structure, the deposited material can penetrate into it more easily.

[0116] Accordingly, a high-speed ion-moving electrolyte layer (130) is formed on the resistance change layer (120) where nano dots (150) are not formed, that is, on the exposed resistance change layer (120).

[0117] When a high-speed ion-moving electrolyte layer (130) is formed within the resistance change layer (120) through the above-described series of steps (S310 to S315), an upper electrode (140) can be formed on the upper portion thereon through the above-described step S400.

[0118] FIG. 8 is a diagram illustrating the high-speed ion-mobility electrolyte layer formation step (S300) of FIG. 6 according to another embodiment of the present invention.

[0119] First, in step S320, a photoresist (160) can be formed on the upper surface of the resistance change layer (120) formed through the above-mentioned step S200.

[0120] In the above-mentioned step S320, the photoresist may be formed through a spin coating process, but is not limited thereto.

[0121] And in step S322, a photomask formed with a nano-size pattern is formed on the photoresist (160), and then exposed and developed from the top to form a photoresist pattern that exposes the resistance change layer (120).

[0122] In step S324, a high-speed ion-moving electrolyte layer (130) can be formed by ion-implanting a material having a lower diffusion activation energy of metal ions compared to the resistance-changing layer (120) into the exposed resistance-changing layer (120) using a photoresist pattern as an ion-implanting mask, thereby forming a high-speed ion-moving electrolyte layer (130) that forms a high-speed ion-moving path.

[0123] In the above-described step S324, a high-speed ion-mobility electrolyte layer can be formed to a desired depth by controlling the heat treatment temperature during or after ion implantation, the ion implantation angle, the ion implantation dose, and the energy of the ions.

[0124] Afterwards, the photo register pattern can be removed in step S326.

[0125] When the high-speed ion-moving electrolyte layer (130) is formed through the above-described series of steps (S320 to S326), an upper electrode (140) can be formed on the upper portion thereon through the above-described step S400.

[0126] FIG. 9 is a diagram illustrating the high-speed ion-mobility electrolyte layer formation step (S300) of FIG. 6 according to another embodiment of the present invention.

[0127] First, in step S330, a photoresist (160) can be formed on the upper surface of the resistance change layer (120) formed through the above-mentioned step S200.

[0128] In the above-mentioned step S330, the photoresist may be formed through a spin coating process, but is not limited thereto.

[0129] And in step S332, a photomask formed with a nano-size pattern is formed on the photoresist (160), and then exposed and developed from the top to form a photoresist pattern that exposes the resistance change layer (120).

[0130] In step S334, the exposed resistance change layer can be etched using the photoresist pattern as an etching mask.

[0131] In step S336, a material having a lower diffusion activation energy of metal ions compared to the resistance change layer (120) can be deposited in the area etched through step S334 above to form a high-speed ion movement electrolyte layer (130) that forms a high-speed ion movement path.

[0132] In the above-described step S336, a material having a lower diffusion activation energy of metal ions compared to the resistance change layer (120) can be deposited through an atomic layer deposition (ALD) process, but is not limited thereto.

[0133] Afterwards, the photo register pattern can be removed in step S338.

[0134] When the high-speed ion-moving electrolyte layer (130) is formed through the above-described series of steps (S330 to S338), an upper electrode (140) can be formed on the upper portion thereon through the above-described step S400.

[0135] FIG. 10 is a diagram exemplarily showing the switching characteristics of a resistance change memory device according to the prior art, and FIG. 11 is a diagram exemplarily showing the switching characteristics of a resistance change memory device according to the present invention.

[0136] As shown in FIG. 10, since the resistance change memory device according to the prior art uses only one electrolyte layer, the same diffusion activation energy barrier is applied regardless of which direction the oxidized metal ions move.

[0137] However, in the resistance change memory device according to the present invention, the oxidized metal moves from the upper electrode (140) to the lower electrode (110) through a high-speed ion-moving electrolyte layer (130) formed of a material having a significantly lower electron-ion diffusion activation energy compared to the resistance change layer (120) to form a filament, and thus the filament formation location is limited to the high-speed ion-moving electrolyte layer (130), which is a limited path, so it can be seen that the reset dispersion and set dispersion show greatly improved operation.

[0138] FIG. 12 is a diagram exemplarily showing the retention characteristics of a resistance change memory device according to the prior art, and FIG. 13 is a diagram exemplarily showing the retention characteristics of a resistance change memory device according to the present invention.

[0139] As previously explained, in the resistance change memory device according to the present invention, due to the difference in metal ion mobility between the resistance change layer (120) and the high-speed ion movement electrolyte layer (130), a diffusion activation energy barrier for metal ions is formed laterally, thereby blocking horizontal diffusion, and the metal ions move along a limited high-speed ion movement path to form a filament.

[0140] In this way, by restricting the filament formation location to a high-speed ion transport path, the filament is repeatedly formed and destroyed in a specific region, thereby maintaining the filament structure stably. Consequently, as the states of LRS and HRS are clearly distinguished, retention characteristics can be improved.

[0141] Through FIGS. 12 and 13, it can be confirmed that the retention of the resistance change memory device according to the present invention is improved compared to the conventional one.

[0142] FIG. 14 is a diagram exemplarily showing the endurance characteristics of a resistance change memory device according to the prior art, and FIG. 15 is a diagram exemplarily showing the endurance characteristics of a resistance change memory device according to the present invention.

[0143] In the resistance change memory device according to the present invention, the filament formation location is limited to the high-speed ion-moving electrolyte layer (130), so that the filament is repeatedly formed / destroyed in a specific area, and thereby the switching between LRS and HRS can be stably repeated, and thus the endurance characteristics can also be improved.

[0144] Through FIGS. 14 and 15, it can be confirmed that the endurance of the resistance change memory device according to the present invention is improved compared to the conventional one.

[0145] As such, according to the present invention, by forming a filament path of a limited shape based on the difference in mobility of metal ions, switching dispersion can be minimized.

[0146] In addition, since resistance change memory devices based on the mobility difference of metal ions can be formed through a relatively simple process, they can be manufactured at a low manufacturing cost.

[0147] In addition, by forming a restricted type of filament path based on the mobility difference of metal ions, the retention and endurance characteristics of the device can also be improved.

[0148] Although various preferred embodiments of the present invention have been described above with some examples, the descriptions of various embodiments described in the "Specific details for carrying out the invention" section are merely illustrative, and those skilled in the art to which the present invention pertains will understand that the present invention can be modified in various ways or equivalent embodiments can be carried out based on the above description.

[0149] In addition, since the present invention can be implemented in various other forms, the present invention is not limited by the description above. The above description is provided merely to make the disclosure of the present invention complete and to fully inform those skilled in the art of the scope of the present invention, and it should be understood that the present invention is defined only by each claim of the claims.

[0150] The present invention relates to a resistive switching memory device that forms a limited type of filament path based on differences in metal ion mobility, and a method for manufacturing the same. This invention can be widely utilized in the manufacturing of electronic devices and the development of data storage devices. In particular, the technology of the present invention can contribute to improving the reliability and performance of memory devices by minimizing the dispersion of switching characteristics during the manufacturing process of non-volatile memory devices and by improving the retention and endurance characteristics of the device. Based on these characteristics, the present invention has a high potential to be utilized as a core technology for the development of next-generation memory devices and is expected to play an important role in the entire electronic device and semiconductor industry.

Claims

1. Lower electrode; A resistance change layer formed on the upper part of the lower electrode, wherein a change in resistance of the device is induced according to filament formation and destruction; An upper electrode formed on top of the resistance change layer and providing metal ions for filament formation according to an applied voltage or current; and A resistance change memory device based on ion mobility difference, characterized by comprising: at least one high-speed ion movement electrolyte layer formed within the resistance change layer with a material having a lower diffusion activation energy of metal ions compared to the resistance change layer, and formed orthogonally to the upper electrode to form a high-speed ion movement path.

2. In Paragraph 1, The above high-speed ion-mobility electrolyte layer is, A resistance change memory device based on ion mobility difference, characterized in that one end is formed to contact the upper electrode and the other end is formed to contact the lower electrode.

3. In Paragraph 1, The above high-speed ion-mobility electrolyte layer is, A resistance change memory device based on ion mobility difference, characterized in that one end is formed to contact the upper electrode and the other end is formed to face the lower electrode, and is formed to have a depth of more than half of the resistance change layer.

4. In Paragraph 1, The above resistance change layer is, It is formed of amorphous silicon (a-Si), and The above high-speed ion-mobility electrolyte layer is, A resistance change memory device based on ion mobility difference, characterized by being formed of a chalcogenide material.

5. In Paragraph 1, The above high-speed ion-mobility electrolyte layer is, A resistance change memory device based on ion mobility difference, characterized by being formed to have a width of 10 nm or less.

6. A lower electrode forming step for forming a lower electrode; A resistance change layer formation step for forming a resistance change layer on the upper portion of the lower electrode, wherein a resistance change layer is formed such that a change in the resistance of the device is induced according to filament formation and destruction; A step of forming a high-speed ion-moving electrolyte layer orthogonally to the upper electrode, wherein at least one high-speed ion-moving electrolyte layer is formed within the resistance-changing layer using a material having a lower diffusion activation energy of metal ions compared to the resistance-changing layer, thereby forming a high-speed ion-moving path; and A method for manufacturing a resistance change memory device based on ion mobility difference, characterized by including: a step of forming an upper electrode on top of the resistance change layer, which provides metal ions for filament formation according to an applied voltage or current.

7. In Paragraph 6, The above high-speed ion-mobility electrolyte layer formation step is, A step of forming a plurality of nanodots on the upper surface of the resistance change layer; and A method for manufacturing a resistance change memory device based on ion mobility difference, characterized by comprising the step of forming a high-speed ion movement electrolyte layer that forms a high-speed ion movement path by depositing a material having a lower diffusion activation energy of metal ions than that of the resistance change layer on top of the resistance change layer on which the nanodots are formed.

8. In Paragraph 6, The above high-speed ion-mobility electrolyte layer formation step is, A step of forming a photoresist on top of the resistance change layer; A step of forming a photomask formed with a nano-size pattern on top of the photoresist, and then exposing and developing from the top to form a photoresist pattern that exposes the resistance change layer; A step of forming a high-speed ion-mobility electrolyte layer that forms a high-speed ion-mobility path by ion-implanting a material having a lower diffusion activation energy of metal ions than that of the resistance-change layer into the exposed resistance-change layer using the above photoresist pattern as an ion-implantation mask; and A method for manufacturing a resistance change memory device based on ion mobility difference, characterized by including the step of removing the above photoresistor pattern.

9. In Paragraph 6, The above high-speed ion-mobility electrolyte layer formation step is, A step of forming a photoresist on top of the resistance change layer; A step of forming a photomask formed with a nano-size pattern on top of the photoresist, and then exposing and developing from the top to form a photoresist pattern that exposes the resistance change layer; A step of etching the exposed resistance change layer using the above photoresist pattern as an etching mask; A step of depositing a material having a lower metal ion diffusion activation energy compared to the resistance change layer in the etched area; and A method for manufacturing a resistance change memory device based on ion mobility difference, characterized by including the step of removing the above photoresistor pattern.

10. In Paragraph 6, The above high-speed ion-mobility electrolyte layer is, A method for manufacturing a resistance change memory device based on an ion mobility difference, characterized in that one end is formed to contact the upper electrode and the other end is formed to contact the lower electrode.

11. In Paragraph 6, The above high-speed ion-mobility electrolyte layer is, A method for manufacturing a resistance change memory device based on an ion mobility difference, characterized in that one end is formed to contact the upper electrode and the other end is formed to face the lower electrode, and is formed to have a depth of more than half of the resistance change layer.

12. In Paragraph 6, The above resistance change layer is, It is formed of amorphous silicon (a-Si), and The above high-speed ion-mobility electrolyte layer is, A method for manufacturing a resistance change memory device based on ion mobility difference, characterized by being formed from a chalcogenide material.

13. In Paragraph 6, The above high-speed ion-mobility electrolyte layer is, A method for manufacturing a resistance change memory device based on ion mobility difference, characterized by being formed to have a width of 10 nm or less.

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