Glass substrate for semiconductor package and manufacturing method thereof

Abstract

The present specification provides a glass substrate for a semiconductor package, the glass substrate comprising: a glass substrate including a first surface and a second surface facing each other, and an inner surface connecting the first surface and the second surface and defining a through-hole; and a metal layer disposed in the through-hole of the glass substrate, wherein the glass substrate includes a first region extending from the inner surface and having a compressive stress, the through-hole has a first diameter at the first surface, a second diameter at a point corresponding to one-half of a thickness of the glass substrate, and a third diameter at the second surface, the first diameter being greater than the second diameter and the third diameter being greater than the second diameter, and the metal layer fills 90 vol% or more of the through-hole.

Description

Glass substrate for semiconductor packaging, and method of manufacturing the same

[0001] This specification relates to a glass substrate for a semiconductor package and a method for manufacturing the same.

[0002] The present application claims the benefit of the filing dates of Korean Patent Application No. 10-2024-0182726 filed with the Korean Intellectual Property Office on December 10, 2024, and Korean Patent Application No. 10-2025-0178985 filed with the Korean Intellectual Property Office on November 24, 2025, the entire contents of which are incorporated herein by reference.

[0003] Glass substrates are emerging as a promising alternative to conventional organic substrates in the fields of semiconductors, displays, and electronic devices due to their excellent properties. Compared to organic materials, glass exhibits excellent stability in high-temperature processes because it has a coefficient of thermal expansion (CTE) similar to that of semiconductor materials and exhibits less warpage. These characteristics enable the realization of large-area substrates and allow for an increase in the number of input / output (I / O) connections by more than tenfold. Therefore, glass substrates can be advantageous for high-speed signal transmission and effective heat dissipation in next-generation electronic devices.

[0004] Glass substrates include multiple through-glass vias (TGVs) for vertical electrical connections. During the TGV process for forming the TGVs, surface roughness can occur within the through-glass vias, leading to microcracks and surface damage. These defects make the glass vulnerable to further damage in subsequent steps, such as metallization of the through-glass vias, pressure lamination of the insulating layer, singulation, and chip assembly processes. In particular, the difference in the coefficient of thermal expansion (CTE) between the metal placed within the through-glass vias and the glass substrate exacerbates these problems, causing microcracks to propagate and potentially leading to substrate breakage or delamination of the substrate edges.

[0005] Research is underway to improve the stress or strength of glass substrates.

[0006] The present specification aims to provide a glass substrate with improved surface compressive stress, a method for manufacturing the same, and a glass substrate for semiconductor packages.

[0007] A glass substrate for a semiconductor package according to one embodiment of the present specification comprises: a glass substrate including a first surface and a second surface facing each other, an inner surface connecting the first surface and the second surface and defining a through hole; and a metal layer disposed in the through hole of the glass substrate, wherein the glass substrate includes a first region extending from the inner surface and having compressive stress, and the through hole has a first diameter at the first surface, a second diameter at half the thickness of the glass substrate, and a third diameter at the second surface, wherein the first diameter is larger than the second diameter and the third diameter is larger than the second diameter, and the metal layer fills at least 90 vol% of the through hole.

[0008] The thickness of the glass substrate may be at least six times the first diameter of the through hole.

[0009] D3 / D11 may be 0.7 or more and 1.3 or less, and D2 / D3 may be 0.7 or more and 1.3 or less. In this case, D11 is the compressive stress reinforcement depth of the first surface, D2 is the compressive stress reinforcement depth of the inner surface at a point 1 / 4 of the thickness of the glass substrate, and D3 is the compressive stress reinforcement depth of the inner surface at a point 1 / 2 of the thickness of the glass substrate.

[0010] D1 / D3 may be 0.7 or more and 1.3 or less, and D4 / D3 may be 0.7 or more and 1.3 or less. In this case, D1 is the depth of compressive stress reinforcement on the inner surface at a point less than 1 / 4 of the thickness of the glass substrate, and D4 is the depth of compressive stress reinforcement on the inner surface at a point 3 / 4 of the thickness of the glass substrate.

[0011] The through hole may have a minimum diameter at half the thickness of the glass substrate and may have a diameter that increases continuously as it goes toward the first surface and the second surface, respectively, from half the thickness.

[0012] The first diameter may be at least 1.01 times and no more than 2 times the second diameter.

[0013] The first diameter above may be 10㎛ or more and 500㎛ or less.

[0014] The density of the above through holes is 50ea / cm² 2 It could be more than that.

[0015] The thickness of the above glass substrate may be 0.15 mm or more and 1.5 mm or less.

[0016] The compressive stress reinforcement depth of the first surface of the glass substrate may be 2 μm or more.

[0017] The surface compressive stress of the first surface of the glass substrate may be 100 MPa or more.

[0018] The surface roughness of the inner surface may be 0.2㎛ or more and 15㎛ or less.

[0019] The glass substrate may include a first region comprising 0 to less than 5 weight percent sodium oxide and 3 weight percent or more potassium oxide; and a second region comprising 3 weight percent or more sodium oxide.

[0020] The first region may be adjacent to the surface of the glass substrate compared to the second region.

[0021] The above-described glass substrate for a semiconductor package may further include a metallization promoting layer disposed between the inner surface of the glass substrate and the metal layer.

[0022] The metallization promoting layer may include a silane coupling agent; and a Pd binder.

[0023] A method for manufacturing a glass substrate for a semiconductor package according to one embodiment of the present specification comprises the steps of: preparing a base glass containing sodium oxide; irradiating the base glass with a laser to form a deformation region inside the base glass; etching the base glass to form a plurality of through holes; and ion strengthening the base glass with the through holes formed therein using a potassium solution to form a glass substrate, wherein the through holes have an hourglass-shaped cross-section.

[0024] The potassium solution is a potassium nitrate solution, and the ion strengthening treatment step may include immersing the mother glass in the potassium solution at a temperature of 200°C to 600°C for 0.5 hours to 20 hours.

[0025] The method for manufacturing the above-described glass substrate for a semiconductor package may further include the step of plating the surface of the glass substrate using a metallization-promoting composition; and the step of filling through holes in the glass substrate.

[0026] A glass substrate according to one embodiment of the present specification has a surface compressive stress of 300 MPa or more, and can resist the expansion of metal in a high-temperature environment. Accordingly, the glass substrate can maintain a stable shape without being damaged.

[0027] A glass substrate according to one embodiment of the present specification has a through hole having a symmetrical cross-section, so that tensile stress is evenly distributed during thermal expansion of the substrate and the metal layer, thereby providing stability.

[0028] A glass substrate according to one embodiment of the present specification may be surface-treated to improve the adhesion between the glass and the metal.

[0029] A method for manufacturing a glass substrate according to one embodiment of the present specification can increase surface compressive stress inside a through hole by chemically treating the surface of the glass substrate.

[0030] The problems of the present invention are not limited to those mentioned above, and other unmentioned technical problems will be clearly understood by those skilled in the art.

[0031] FIG. 1 is a glass substrate for a semiconductor package according to one embodiment.

[0032] FIGS. 2 and 3 are plan views of a glass substrate for a semiconductor package according to one embodiment, respectively.

[0033] FIG. 4 is a cross-sectional view showing a part of a glass substrate for a semiconductor package according to one embodiment.

[0034] FIG. 5 is an enlarged view of a through hole in a glass substrate according to one embodiment.

[0035] Figure 6 is an enlarged view of area A1 in Figure 4.

[0036] Figure 7 illustrates the ion exchange of sodium and potassium.

[0037] Figure 8 illustrates that cracks occur when a glass substrate containing through holes is not surface-treated.

[0038] Figure 9 is an enlarged view of area A2 in Figure 4.

[0039] FIG. 10 is an enlarged view of a case where a metallization promoting layer according to one embodiment is arranged.

[0040] FIG. 11 is a flowchart illustrating a method for manufacturing a glass substrate according to one embodiment.

[0041] FIGS. 12 to 17 are cross-sectional views showing a part of a method for manufacturing a glass substrate (10) according to one embodiment.

[0042] FIG. 18 is a 3D confocal microscope image of a glass substrate according to one embodiment.

[0043] FIGS. 19 and FIGS. 20 are SEM images of a glass substrate according to one embodiment, respectively.

[0044] FIG. 21 is an OM image of a glass substrate according to one embodiment.

[0045] FIG. 22 is an SEM image of a glass substrate before chemical strengthening treatment according to one embodiment.

[0046] FIG. 23 is an SEM-EDS image of a glass substrate after chemical strengthening treatment according to one embodiment.

[0047] FIG. 24 is a figure showing the evaluation criteria for plating uniformity of a glass substrate according to one embodiment.

[0048] FIG. 25 is a figure showing the measurement locations of each thickness measured to evaluate the plating coverage ratio of a glass substrate according to one embodiment.

[0049] [Explanation of the symbol]

[0050] 100: Glass substrate

[0051] 200: Metal layer

[0052] 110: First Zone

[0053] 120: Second Zone

[0054] 300: Metallization accelerating layer

[0055] The present specification will be described in more detail below.

[0056] In this specification, when a part is described as "comprising" a certain component, it means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.

[0057] In this specification, when a member (layer) is described as being located “on” another member (layer), this includes not only cases where a member (layer) is in contact with another member, but also cases where another member (layer) exists between the two members (layers).

[0058] Unless specifically stated otherwise in this specification, technical terms are used merely to refer to specific embodiments and are not intended to limit the invention.

[0059] The singular forms used in this specification include plural forms unless the phrases clearly indicate otherwise.

[0060] In this specification, “p to q” means a range of p or more and q or less.

[0061] Where measurement conditions and methods are not specifically described for the physical properties described in this specification, said physical properties are measured according to measurement conditions and methods generally used by a person skilled in the art.

[0062] In this specification, unless specifically otherwise specified, measurements of physical properties are performed at room temperature and atmospheric pressure.

[0063] In this specification, “room temperature” refers to a natural temperature that has not been heated or cooled, for example, any temperature within the range of about 10°C to 30°C, for example, about 15°C, about 18°C, about 20°C, about 23°C, or about 25°C. Furthermore, unless otherwise specifically defined in this invention, the unit of temperature is °C.

[0064] In this specification, “atmospheric pressure” refers to natural pressure that is not pressurized or depressurized, and typically refers to about 1 atmosphere (about 700 to 800 mmHg).

[0065] In this specification, the statement that two or more numbers substantially match includes not only numbers or values ​​that completely match, but also numbers or values ​​that are within a margin of error.

[0066] Specific embodiments will be described below with reference to the attached drawings.

[0067] FIG. 1 is a glass substrate (10) for a semiconductor package according to one embodiment.

[0068] FIG. 1 defines a first direction (DR1), a second direction (DR2), and a third direction (DR3). The first direction (DR1) and the second direction (DR2) may exist on the same plane and be perpendicular to each other. The first direction (DR1) and the third direction (DR3) may exist on another same plane and be perpendicular to each other. The second direction (DR2) and the third direction (DR3) may exist on yet another same plane and be perpendicular to each other. The first direction (DR1) refers to the horizontal direction in the drawing, and the second direction (DR2) refers to the vertical direction in the drawing. The third direction (DR3) may refer to the upper and lower directions in the drawing, i.e., the thickness direction. The first to third directions (DR1, DR2, DR3) are relative to what is shown in the drawing. In this specification, unless otherwise noted, "direction" may refer to both directions facing each other that extend along that direction. In addition, if it is necessary to distinguish between the two "directions" extending to both sides, one side will be referred to as "direction one side" and the other side as "direction other side," respectively. Based on FIG. 1, the direction in which the arrow indicating the direction points may be one side, and the opposite direction may be the other side.

[0069] In the following description, for convenience of explanation, when describing the surfaces of each member, the surface facing one side of the third direction (DR3) is referred to as the upper surface, and the surface opposite to said surface is referred to as the lower surface or the lower surface. However, this is not limited thereto, and said surface and said other surface of said member may be referred to as the front surface and the back surface, respectively, or as the first surface or the second surface. In addition, when describing the relative position of each member, one side of the third direction (DR3) may be referred to as the upper surface, and the other side of the third direction (DR3) may be referred to as the lower surface. Terms such as upper surface, lower surface, top, and bottom are relative concepts and are described based on the direction indicated in the drawing.

[0070] A glass substrate (10) for a semiconductor package may include a glass substrate (100) and a metal layer (200). The glass substrate (100) includes a plurality of through holes in the thickness direction (DR3), and the metal layer (200) may fill at least a portion of the through holes of the glass substrate (100).

[0071] The glass substrate (100) is not limited to any material substrate used in the art. For example, the glass substrate (100) of this specification may be a TGV glass substrate with through holes formed therein.

[0072] FIGS. 2 and FIGS. 3 illustrate a plan view of a glass substrate (100) according to one embodiment. A plurality of through holes having a diameter R are arranged at intervals (pitch, PH) along a first direction (DR1) and a second direction (DR2). A plurality of columns of through holes are arranged along the first direction (DR1), and a plurality of rows of through holes are arranged along the second direction (DR2). Referring to FIG. 2, through holes arranged in even rows may overlap with through holes arranged in odd rows in the second direction (DR2). Referring to FIG. 3, through holes arranged in even rows may not overlap with through holes arranged in odd rows in the second direction (DR2). The arrangement of through holes may be changed, not limited to FIGS. 2 and FIG. 3. Additionally, the spacing of the through holes may not be constant and may vary. The spacing between through holes may be defined as the distance between the centers of adjacent through holes.

[0073] FIG. 4 is a cross-sectional view showing a part of a glass substrate (10) for a semiconductor package according to one embodiment of the present specification, cut along I-I' of FIG. 1. FIG. 5 is an enlarged view showing only the through hole of FIG. 4, and FIG. 6 is an enlarged view of the A1 area of ​​FIG. 4.

[0074] The glass substrate (100) includes a through hole in the thickness direction (DR3). The inner surface (S1) of the glass substrate (100) connects the first surface (S2) and the second surface (S3) of the glass substrate (100) and can define a through hole (H).

[0075] The cross-sectional shape of the through hole may be hourglass-shaped. Specifically, the shape of the through hole that can be observed when the glass substrate (100) is cut in the thickness direction (DR3) is hourglass-shaped. The through hole may have a wide diameter at the first surface (S2) and the second surface (S3) of the glass substrate (100), and a narrow diameter at the middle (waist) between the upper surface and the lower surface. In other words, the through hole has a first diameter (R1) at the first surface (S2), a second diameter (R2) at the midpoint of thickness (or central-plane) of the glass substrate, and a third diameter (R3) at the second surface (S3), wherein the first diameter (R1) is larger than the second diameter (R2) and the third diameter (R3) is larger than the second diameter (R2). In this specification, unless the thickness, height, depth, or point is specified, the diameter (R) of the through hole may be a first diameter (R1) on the first surface (S2) or a third diameter (R3) on the second surface (S3).

[0076] In this specification, the diameter of the through hole refers to the diameter that can be observed on the first surface (S2) or the second surface (S3) of the glass substrate (100). If the shape of the through hole is an hourglass, the diameter may vary depending on the height. The glass substrate (100) can be vertically cut with a cutting line passing through the center of the through hole to observe the diameter according to the height / depth / point.

[0077] The cross-sectional shape of the through hole (H) may be symmetrical. The cross-section of the through hole (H) is symmetrical with respect to a straight line passing through the center of the through hole and with respect to a straight line at the center of the thickness of the glass substrate. The center of the through hole is the center of the circle when viewed from the top-view side. The through hole may be point-symmetric with respect to a center of symmetry. The center of symmetry may be the point where the straight line passing through the center of the through hole intersects the straight line at the center of the thickness of the glass substrate. When the cross-section of the through hole is symmetrical, the chemical strengthening described later can occur uniformly. In addition, the tensile stress caused by the thermal expansion of the metal layer (200) and the glass substrate (100) is evenly distributed, so that the glass substrate (100) does not break even in a high-temperature environment.

[0078] In one embodiment of the present specification, the through hole has a minimum diameter at half the thickness of the glass substrate and has a diameter that increases continuously as it goes toward the first surface and the second surface, respectively, from half the thickness. It may have a tapered shape in which the diameter decreases from the first surface to the center of the thickness and an inverse-taper shape in which the diameter increases from the center of the thickness to the second surface.

[0079] In one embodiment of the present specification, the first diameter (R1) is 1.01 times or more and 2 times or less the second diameter (R2), preferably 1.05 times or more and 1.95 times or less, more preferably 1.1 times or more and 1.9 times or less, and even more preferably 1.15 times or more and 1.8 times or less. In the above range, the tensile stress caused by thermal expansion of the metal layer (200) and the glass substrate (100) is evenly distributed so that the glass substrate (100) does not break even in a high-temperature environment.

[0080] In one embodiment of the present specification, the first diameter (R1) of the through hole may be 10 µm to 500 µm. In one embodiment, the first diameter (R1) is preferably 20 µm to 200 µm, more preferably 50 µm to 150 µm, and even more preferably 70 µm to 120 µm. In the above range, it is easy to transmit high-speed signals with high integration density.

[0081] In one embodiment of the present specification, the thickness (T1) of the glass substrate (100) is 0.15 mm or more and 1.5 mm or less. In one embodiment, the thickness (T1) of the glass substrate (100) is preferably 0.2 mm to 1.3 mm, more preferably 0.4 mm to 1.2 mm, and even more preferably 0.4 mm to 0.9 mm. In the above range, the glass substrate (100) can have high mechanical strength and stability and can be easily processed in the TGV process. The thickness of the glass substrate (100) is the minimum distance in the thickness direction (DR3) at the measurement point, and may be a value at one point or an average value of values ​​measured at multiple points. The thickness of the glass substrate (100) may be a value measured at a point 100㎛, 90㎛, 80㎛, 70㎛, 60㎛, 50㎛, 40㎛, 30㎛, or 20㎛ away in the width direction (DR1, DR2) from the point where the first surface (S2) and the inner surface (S1) meet, or may be the average value of the thickness measured at the plurality of points.

[0082] In one embodiment of the present specification, the thickness (T1) of the glass substrate (100) is at least 6 times the first diameter (R1) of the through hole. In one embodiment, the thickness (T1) of the glass substrate (100) may be at least 6 times and no more than 20 times the first diameter (R1) of the through hole, preferably at least 6 times and no more than 10 times.

[0083] In the present specification, the aspect ratio of the glass substrate (100) is defined as the value obtained by dividing the thickness (T1) of the glass substrate by the first diameter (R1) of the through hole. The aspect ratio of the glass substrate (100) may be the same as the aspect ratio of the through hole of the glass substrate (100).

[0084] In one embodiment of this specification, the density of through holes is 50ea / cm² 2 That is all. In one embodiment, the density of through holes is 50ea / cm². 2 Up to 50,000ea / cm 2 , preferably 60ea / cm 2 Up to 30,000ea / cm 2 , more preferably 70ea / cm 2 Up to 10,000ea / cm 2 , more preferably 80ea / cm 2 Up to 5,000ea / cm 2 This is the range. In the above case, cracks do not occur in the glass substrate during the TGV process, and it is advantageous for high-speed signal transmission. When observed from the first surface (S2) or the second surface (S3) of the glass substrate (100), the number of through holes per unit area (1 cm × 1 cm) is defined as the density of through holes. The number of through holes may be equal to the number of centers of the holes.

[0085] When the glass substrate (100) is cut in the thickness direction (DR3), the glass substrate (100) may include a first region (110) adjacent to the surface and a second region (120) different from the first region (110). The first region (110) may be adjacent to the surface of the glass substrate (100) compared to the second region (120). In this specification, "glass substrate surface" or "glass substrate surface" may refer to all parts of the glass substrate that come into contact with the outside. Referring to FIG. 4, the surface of the glass substrate (100) includes an inner surface (S1), a first surface / upper surface (S2), and a second surface / lower surface (S3).

[0086] A first region (110) of the glass substrate (100) has high compressive stress, and a second region (120) has tensile stress. In one embodiment, the first region (110) is a region of the glass substrate (100) that has been surface-treated to enhance compressive stress or compressive strength, and may be a compressive stress layer. To achieve equilibrium with the compressive stress generated in the first region (110), the second region (120) has tensile stress. The first region (110) and the second region (120) may not have a physical boundary.

[0087] In one embodiment of the present specification, a first region (110) of a glass substrate (100) may be a region in which sodium and potassium are ion-exchanged through a solution containing potassium ions. FIG. 7 illustrates the ion exchange of sodium and potassium. When a solution containing potassium ions (e.g., a KNO3 solution) is applied to the glass surface, sodium ions in the glass and potassium ions in the solution can be exchanged. Since potassium ions are larger than sodium ions, potassium ions occupy more space, and compressive stress may be generated on the glass surface. In other words, compressive stress (CS: compressive stress) is the induced compression of the glass network after ion exchange in the surface layer of the glass.

[0088] Since the first region (110) is formed on the surface of the glass substrate (100), it can be formed in a direction toward the center of the glass substrate (100) from the inner surface (S1), the first surface (S2), and the second surface (S3) of the glass substrate (100). The compressive stress can generally have a maximum value on the surface of the glass substrate (100) and decreases as it moves toward the interior of the glass substrate (100).

[0089] The reinforced glass substrate (100) may have high compressive stress on its surface. The glass substrate (100) according to one embodiment of the present specification may have greater stress or strength than the metal layer (200) placed in the through hole, and may be stable even at high temperatures.

[0090] If the glass substrate is not strengthened by surface treatment, the glass substrate may be damaged by the thermal expansion of the metal within the through hole in a high-temperature environment. FIG. 8 illustrates cracks occurring when a glass substrate (100_1) including a through hole is not surface treated. Cracks may occur when there is a difference in the coefficient of thermal expansion between the metal layer (200) within the through hole and the glass substrate (100) in a high-temperature environment.

[0091] On the other hand, the glass substrate (100) according to one embodiment of the present specification has high compressive stress on its surface, so it can resist the expansion of the metal layer (200) even at high temperatures. In addition, the through hole has a symmetrical cross-section, so chemical strengthening occurs uniformly across the inner surface, and tensile stress caused by thermal expansion of the metal layer (200) and the glass substrate (100) is evenly distributed, so that the glass substrate (100) does not break even in a high-temperature environment.

[0092] In one embodiment of the present specification, the surface compressive stress of the first surface (S2) of the glass substrate (100) is 100 MPa or more. In one embodiment, the surface compressive stress of the first surface (S2) of the glass substrate (100) is 100 MPa or more and 2,000 MPa or less, preferably 300 MPa or more and 1,500 MPa or less, more preferably 500 MPa or more and 1,200 MPa or less, and even more preferably 700 MPa or more and 1,000 MPa or less. In the above range, it can also resist thermal expansion of the metal layer (200).

[0093] In one embodiment of the present specification, the surface compressive stress of the first surface (S2) of the glass substrate (100) and the surface compressive stress of the second surface (S3) are substantially the same.

[0094] In one embodiment of the present specification, the surface compressive stress of the second surface (S3) of the glass substrate (100) is 100 MPa or more. In one embodiment, the surface compressive stress of the second surface (S3) of the glass substrate (100) is 100 MPa or more and 2,000 MPa or less, preferably 300 MPa or more and 1,500 MPa or less, more preferably 500 MPa or more and 1,200 MPa or less, and even more preferably 700 MPa or more and 1,000 MPa or less. In the above range, it can also resist thermal expansion of the metal layer (200).

[0095] In this specification, surface compressive stress may be measured by methods known to those skilled in the art. Compressive stress or surface compressive stress may be measured by applying optical polarization, chemical etching, laser scattering, optical tomography, etc. In one embodiment, surface compressive stress may be measured using a commercially available surface stress measuring instrument in accordance with ASTM C1279 or ASTM C1048, for example, FSM6000LE (manufacturer ORIHARA INDUSTRIAL CO. LTD) or SLP1000 (manufacturer ORIHARA). Surface compressive stress may be measured on a first surface (S2) or a second surface (S3), which is an exposed surface of the glass substrate. The surface compressive stress is measured using the aforementioned surface stress measuring instrument, and an average value of values ​​measured at multiple points on the surface of the glass substrate (100) may be obtained.

[0096] In this specification, the compressive stress reinforcement depth is the thickness of the region where the compressive stress or compressive strength of the glass substrate (100) is reinforced, and may correspond to the thickness of the first region (110) or the thickness of the sodium / potassium ion-exchanged region (layer). The compressive stress reinforcement depth can be measured by a depth of layer (DoL) measurement method and may be based on a method known to those skilled in the art. The compressive stress reinforcement depth (DoL) can be measured by applying optical polarization, chemical etching, laser scattering, optical tomography, etc.

[0097] Referring to FIGS. 4 and 9, the compressive stress reinforcement depth of the first surface (S2) and the second surface (S3) of the glass substrate (100) is a length in one or the other direction in the thickness direction (DR3), and the compressive stress reinforcement depth of the inner surface (S1) is a length in the length direction or the plane direction (parallel to the first or second surface).

[0098] In one embodiment, the compressive stress reinforcement depth can be measured using a commercially available surface stress measuring instrument, for example, FSM6000LE (manufacturer ORIHARA INDUSTRIAL CO. LTD) or SLP1000 (manufacturer ORIHARA).

[0099] In one embodiment of the present specification, the compressive stress reinforcement depth (D11, D12) on the first surface (S2) or / and the second surface (S3) of the glass substrate (100) can be measured using the surface stress measuring device described above.

[0100] In one embodiment of the present specification, the compressive stress reinforcement depth (D11) of the first surface (S2) of the glass substrate (100) is 2 μm or more. In one embodiment, the compressive stress reinforcement depth (D11) of the first surface (S2) of the glass substrate (100) is preferably 2 μm or more and 100 μm or less, more preferably 3 μm or more and 80 μm, and even more preferably 5 μm or more and 50 μm. In the above range, the equilibrium between the compressive stress on the surface and the tensile stress inside is maintained, so the glass substrate is not damaged.

[0101] In one embodiment of the present specification, the compressive stress reinforcement depth (D11) measured on the first surface (S2) of the glass substrate (100) and the compressive stress reinforcement depth (D12) measured on the second surface (S3) are substantially the same.

[0102] In one embodiment of the present specification, the compressive stress reinforcement depth (D12) of the second surface (S3) of the glass substrate (100) is 2 μm or more. In one embodiment, the compressive stress reinforcement depth (D12) of the second surface (S3) of the glass substrate (100) is preferably 2 μm or more and 100 μm or less, more preferably 3 μm or more and 80 μm, and even more preferably 5 μm or more and 50 μm. In the above range, the equilibrium between the compressive stress on the surface and the tensile stress inside is maintained, so the glass substrate is not damaged.

[0103] The point for measuring the compressive stress reinforcement depth (D11) of the first surface (S2) is a point further away from the point where the first surface (S2) and the inner surface (S1) meet than the compressive stress reinforcement depth (D1 to D5) of the inner surface (S1). For example, the point for measuring the compressive stress reinforcement depth (D11) of the first surface (S2) may be a point 100㎛, 90㎛, 80㎛, 70㎛, 60㎛, 50㎛, 40㎛, 30㎛, or 20㎛ away in the width direction (DR1, DR2) from the point where the first surface (S2) and the inner surface (S1) meet.

[0104] The point for measuring the compressive stress reinforcement depth (D12) of the second surface (S3) is a point located further away from the point where the second surface (S3) and the inner surface (S1) meet in the width direction (DR1, DR2) than the compressive stress reinforcement depth (D1 to D5) of the inner surface (S1). For example, the point for measuring the compressive stress reinforcement depth (D12) of the second surface (S3) may be a point located 100㎛, 90㎛, 80㎛, 70㎛, 60㎛, 50㎛, 40㎛, 30㎛, or 20㎛ away in the width direction (DR1, DR2) from the point where the second surface (S3) and the inner surface (S1) meet.

[0105] A glass substrate (100) according to one embodiment of the present specification may have a uniform compressive stress depth even on the inner surface (S1).

[0106] In one embodiment of the present specification, the depth of compressive stress reinforcement (D1, D2, D3, D4, D5) on the inner surface (S1) of the glass substrate (100) can be obtained through SEM-EDS analysis. Specifically, the glass substrate (100) is cross-cut using a laser or a glass knife with a cutting line passing through the center of the through hole, and the interior of the exposed through hole is analyzed through EDS (Energy Dispersive X-ray Spectroscopy) analysis of a Scanning Electron Microscope (SEM) device. The depth (length in the longitudinal direction or the plane direction) of potassium (K) penetrating from the inner surface (S1) of the glass substrate (100) into the interior of the glass substrate (100) is obtained through the potassium (K) ion distribution of the K mapping image. For example, if the glass substrate (100) originally contains potassium (K) (before strengthening treatment), the compressive stress depth (D1, D2, D3, D4, D5) of the inner surface (S1) may be the depth (minimum depth) at the starting point where the concentration of the original potassium (K) (i.e., the concentration of potassium (K) in the second region (120)) is measured. Alternatively, if the glass substrate (100) originally does not contain potassium (K), the compressive stress depth (D1, D2, D3, D4, D5) of the inner surface (S1) may be the maximum depth at which potassium (K) is observed, or the minimum depth at the point where the concentration of potassium (K) remains constant.

[0107] In one embodiment, the energy dispersion spectrum analysis may be SEM-EDS analysis. The SEM-EDS analysis may be performed using a JEOL-7800F instrument with the acceleration voltage set to 15 kV, and sampling may be carried out inside a glove box filled with argon gas.

[0108] In this specification, the compressive stress depth of the inner surface (S1) of the glass substrate (100) can be measured at a plurality of points or heights. The plurality of measurement points on the inner surface (S1) are distinguished by a vertical length or height from the first surface (S1).

[0109] Referring to FIG. 9, the compressive stress reinforcement depths at points along the inner surface (S1) sequentially from the first surface (S2) to the second surface (S3) at less than 1 / 4, 1 / 4, 1 / 2, 3 / 4, and more than 3 / 4 of the thickness (T1) are respectively denoted as D1, D2, D3, D4, and D5. Specifically, D1 is the compressive stress reinforcement depth of the inner surface (S1) at a point less than 1 / 4 of the thickness (T1) of the glass substrate (100). D2 is the compressive stress reinforcement depth of the inner surface (S1) at a point 1 / 4 of the thickness (T1) of the glass substrate (100). D3 is the compressive stress reinforcement depth of the inner surface (S1) at a point 1 / 2 of the thickness (T1) of the glass substrate (100). D4 is the depth of compressive stress reinforcement on the inner surface (S1) at a point 3 / 4 of the thickness (T1) of the glass substrate (100). D5 is the depth of compressive stress reinforcement on the inner surface (S1) at a point greater than 3 / 4 of the thickness (T1) of the glass substrate (100). The point (height) at which the depth of compressive stress reinforcement of D1 is measured is greater than the surface compressive stress depth (D11) of the first surface (S2) of the glass substrate (100) and less than 1 / 4 of the thickness (T1) of the glass substrate (100). The point (height) at which the depth of compressive stress reinforcement of D5 is measured is greater than 3 / 4 of the thickness (T1) of the glass substrate (100) and less than the value obtained by subtracting the surface compressive stress depth (D12) of the second surface (S3) from the value of the thickness (T1) of the glass substrate (100).

[0110] A glass substrate (100) according to one embodiment of the present specification can be chemically strengthened on the inner surface (S1) to a degree similar to that on the first surface (S2) and / or the second surface (S3) through a chemical strengthening treatment. Additionally, the through hole has a symmetrical cross-section so that chemical strengthening occurs uniformly across the inner surface.

[0111] In one embodiment of the present specification, D3 / D11 is 0.7 or more and 1.3 or less, preferably 0.75 or more and 1.25 or less, more preferably 0.8 or more and 1.2 or less, and even more preferably 0.85 or more and 1.15 or less. In one embodiment, D3 is D11 or less.

[0112] In one embodiment of the present specification, D3 / D12 is 0.7 or more and 1.3 or less, preferably 0.75 or more and 1.25 or less, more preferably 0.8 or more and 1.2 or less, and even more preferably 0.85 or more and 1.15 or less. In one embodiment, D3 is D12 or less.

[0113] In one embodiment of the present specification, D1 / D3 is 0.7 or more and 1.3 or less. In one embodiment, D1 / D3 is 0.7 or more, 0.71 or more, 0.72 or more, 0.73 or more, 0.74 or more, 0.75 or more, or 0.8 or more. In one embodiment, D1 / D3 is 1.3 or less, 1.29 or less, 1.28 or less, 1.27 or less, 1.26 or less, 1.25 or less, or 1.2 or less.

[0114] In one embodiment of the present specification, D2 / D3 is 0.7 or more and 1.3 or less. In one embodiment, D2 / D3 is 0.7 or more, 0.71 or more, 0.72 or more, 0.73 or more, 0.74 or more, 0.75 or more, or 0.8 or more. In one embodiment, D2 / D3 is 1.3 or less, 1.29 or less, 1.28 or less, 1.27 or less, 1.26 or less, 1.25 or less, or 1.2 or less.

[0115] In one embodiment of the present specification, D4 / D3 is 0.7 or more and 1.3 or less. In one embodiment, D4 / D3 is 0.7 or more, 0.71 or more, 0.72 or more, 0.73 or more, 0.74 or more, 0.75 or more, or 0.8 or more. In one embodiment, D4 / D3 is 1.3 or less, 1.29 or less, 1.28 or less, 1.27 or less, 1.26 or less, 1.25 or less, or 1.2 or less.

[0116] In one embodiment of the present specification, D5 / D3 is 0.7 or more and 1.3 or less. In one embodiment, D5 / D3 is 0.7 or more, 0.71 or more, 0.72 or more, 0.73 or more, 0.74 or more, 0.75 or more, or 0.8 or more. In one embodiment, D5 / D3 is 1.3 or less, 1.29 or less, 1.28 or less, 1.27 or less, 1.26 or less, 1.25 or less, or 1.2 or less.

[0117] In one embodiment of the present specification, the compressive stress reinforcement depth (D1, D2, D3, D4, D5) of the inner surface (S1) of the glass substrate (100) is 2 μm or more. In one embodiment, the compressive stress reinforcement depth (D1, D2, D3, D4, D5) of the inner surface (S1) of the glass substrate (100) is preferably 2 μm or more and 100 μm or less, more preferably 3 μm or more and 80 μm, and even more preferably 5 μm or more and 50 μm. In the above range, it is possible to resist thermal expansion of the metal layer (200) without significantly increasing the weight of the glass substrate (100).

[0118] In one embodiment of the present specification, the first region (110) of the glass substrate (100) has a compressive stress of 100 MPa or more. In one embodiment, the compressive stress of the first region (110) is 100 MPa or more and 1,800 MPa or less, preferably 300 MPa or more and 1,500 MPa or less, more preferably 500 MPa or more and 1,200 MPa or less, and even more preferably 700 MPa or more and 1,000 MPa or less. In the above range, the glass substrate (100) does not break while having a coefficient of thermal expansion similar to that of the metal layer (200) placed in the through hole.

[0119] In one embodiment of the present specification, the second region (120) of the glass substrate (100) has a tensile stress of less than 300 MPa. In one embodiment, the tensile stress of the second region (120) is preferably 1 MPa or more and 250 MPa or less, more preferably 5 MPa or more and 200 MPa or less, and even more preferably 10 MPa or more and 100 MPa or less.

[0120] The compressive stress of the first region (110) may be a compressive stress within the compressive stress reinforcement depth, and the tensile stress of the second region (120) may be a tensile stress at a depth greater than the compressive stress reinforcement depth. The compressive stress at a specific depth may be measured using the surface stress measuring device described above after chemically etching or mechanically polishing the glass surface to that depth. For example, the compressive stress of the first region (110) may be the surface compressive stress of the glass substrate (100).

[0121] In one embodiment of the present specification, the glass substrate (100) comprises sodium oxide and potassium oxide.

[0122] The sodium content of the first region (110) of the glass substrate (100) is smaller than the sodium content of the second region (120). The potassium content of the first region (110) is larger than the potassium content of the second region (120).

[0123] In one embodiment of the present specification, a first region (110) of a glass substrate (100) comprises 0 to less than 5 weight percent sodium oxide and 3 weight percent or more potassium oxide. The first region (110) may not contain sodium oxide or may contain less than 5 weight percent. The first region (110) may contain 3 weight percent or more potassium oxide to strengthen surface compressive stress.

[0124] The weight percentage of sodium oxide and potassium oxide in the first region (110) may be based on 100 weight percent of the volume of a certain thickness (e.g., 20 μm, or 50 μm) of the total surface area of ​​the first region (110).

[0125] In one embodiment of the present specification, the sodium oxide content in the second region (120) of the glass substrate (100) is 3 weight% or more and 30 weight% or less, preferably 5 weight% or more and 20 weight% or less, more preferably 10 weight% or more and 15 weight% or less. In one embodiment, the second region (120) contains 0 weight% or more and less than 3 weight% of potassium oxide. The second region (120) may not contain potassium oxide.

[0126] The weight percentage of sodium oxide and potassium oxide in the second region (120) may be based on 100 weight percent of the volume of a certain thickness (e.g., 20 μm, or 50 μm) of the total surface area of ​​the second region (120).

[0127] The sodium oxide / potassium oxide content in the first region (110) and the second region (120) can be obtained by a method known to those skilled in the art. For example, it can be obtained through X-ray Fluorescence (XRF) or Energy Dispersive X-ray Spectroscopy (EDS). In one embodiment, the sodium oxide and potassium oxide content in the first region (110) can be obtained by Wavelength Dispersive X-ray Fluorescence (XRF) analysis of the surface (e.g., top or bottom surface) of the glass substrate (100). The sodium oxide and potassium oxide content in the second region (110) can be obtained by XRD analysis of the surface (e.g., top or bottom surface) after removing the first region (110) of the glass substrate (100), that is, after etching, polishing, or cutting the glass substrate (100) to a depth greater than the compressive stress strengthening depth (DoL). For example, a depth greater than the compressive stress reinforcement depth (DoL) may be 50 μm deep from the first surface (S2) or the second surface (S3).

[0128] In one embodiment of the present specification, the surface roughness of the inner surface (S1) of the glass substrate (100) is 0.2 μm or more and 15 μm or less. In one embodiment, the surface roughness of the inner surface (S1) of the glass substrate (100) is preferably 1 μm or more and 10 μm or less, more preferably 3 μm or more and 6 μm or less. Roughness is formed inside the glass substrate (100) during the process of forming through holes. According to one embodiment of the present specification, even with a roughness within the above range, a glass substrate with enhanced strength can be obtained without the occurrence or propagation of cracks, and high processability can be achieved. Even if compressive stress or compressive strength is improved through ion strengthening treatment after the formation of through holes, the effect on the roughness inside the through holes is minimal.

[0129] In this specification, surface roughness (Ra) may be measured by a method known to those skilled in the art. Surface roughness (Ra) may be measured according to ISO 4287, ISO 25178, or ASTM E1421. In one embodiment, the surface roughness of the inner surface (S1) of the glass substrate (100) may be measured according to ISO 25178 using the Ra measurement mode of a Keyence 3D confocal microscope.

[0130] A metal layer (200) is disposed in a through hole of a glass substrate (100). The metal layer (200) may fill all or at least part of the through hole, and the plated glass substrate (100) may be electrically connected to a semiconductor chip and an external circuit. In this specification, metallization of the glass substrate (100) is a general term for plating of the glass substrate (100), that is, forming a metal layer on at least one surface of the glass substrate (100). The type of metal used for plating is not limited, but may be, for example, Cu (copper), chromium (Cr), titanium (Ti), gold (Au), or Ni (nickel), and preferably may be copper.

[0131] In one embodiment of the present specification, the metal layer (200) fills 90 vol% or more of the through hole. In one embodiment, the metal layer (200) fills 90 vol% or more, 95 vol% or more, 97 vol% or more, 99 vol% or more, 99 vol% or more, 99.5 vol% or more, 99.9 vol% or more, or 100 vol% of the through hole. When having such a metal filling rate, electrical connection with low resistance can be made through a through hole of a small diameter. After calculating the ratio of the void volume to the total volume of the through hole, the value obtained by subtracting the volume fraction of the void from 100% can be defined as the metal filling rate. The through hole can be defined as a space enclosed by a virtual surface extended by the first surface (S2) of the glass substrate (100), a virtual surface extended by the second surface (S3), and an inner surface (S1). The metal filling rate can also be calculated by measuring the total area of ​​the through hole and the void area after cutting a cross-section along a cutting line passing through the center of the through hole. Alternatively, the metal filling rate can be calculated by determining the volume fraction of the void within the through hole using X-rays through a microscope.

[0132] One side of the metal layer (200) can be aligned with the first side (S2) of the glass substrate (100). The other side of the metal layer (200) opposite to the first side can be aligned with the second side (S3) of the glass substrate (100). The glass substrate (10) for a semiconductor package can undergo a flattening process to have a surface in which the metal layer (200) and the glass substrate (100) are aligned.

[0133] In this embodiment, surfaces of the glass substrate (100) and the metal layer (200) are substantially aligned or corresponding on the same plane, but a slight height difference may exist due to the manufacturing process, and it is understood that such a height difference is also included within the scope of the present invention. Furthermore, the terms 'alignment' or 'match' in this specification do not mean only perfect flatness or flawless contact, but encompass height deviations or protrusions within a certain range. Therefore, it is clarified that even if a slight height difference exists, it is included within the technical scope of this specification.

[0134] In one embodiment of the present specification, the thickness of the metal layer (200) may be the same as or within an error range of the thickness (T1) of the glass substrate (100). The thicknesses of the metal layer (200) and the glass substrate (100) may be measured at or near their boundary. In one embodiment, the thickness of the metal layer (200) may be measured at the center of the through hole. The thickness of the glass substrate (100) may be a value measured at a point 100㎛, 90㎛, 80㎛, 70㎛, 60㎛, 50㎛, 40㎛, 30㎛, or 20㎛ away in the width direction (DR1, DR2) from the point where the first surface (S2) and the inner surface (S1) meet, or may be the average value of the thicknesses measured at the plurality of points.

[0135] The metal layer (200) is formed through a first plating and a second plating. It is first metallized as a thin film on the surface of the glass substrate (100) through electroless plating, and then the through holes are filled with metal through electroplating. As a first plating method, a method may be used in which a metal seed is formed through a metal sputtering process (dry), and then the metal is deposited (wet) on the surface of the glass substrate (100) through electroless plating. As another first plating method, a metallization promotion treatment (wet) may be performed on the surface of the glass substrate (100) to form a metallization promotion layer (300), and then electroless plating (wet) may be performed.

[0136] In one embodiment of the present specification, a metallization promoting layer (300) may be optionally disposed between the glass substrate (100) and the metal layer (200). FIG. 10 is an enlarged view of the case where the metallization promoting layer (300) is disposed. The metallization promoting layer (300) may be located on the inner surface (S1) of the glass substrate (100). In one embodiment, the metallization promoting layer (300) may be located on the first surface (S2) and the second surface (S3) of the glass substrate (100). In one embodiment, the metallization promoting layer (300) on the first surface (S2) and the second surface (S3) of the glass substrate (100) may be removed by a flattening process described later.

[0137] In one embodiment of the present specification, the metallization promoting layer (300) comprises a silane coupling agent; and a Pd binder. The Pd binder is a metal ion-containing compound comprising a functional group capable of coupling with the silane coupling agent. The metallization promoting layer (300) may be formed by a metallization promoting composition according to one embodiment of the present specification.

[0138] In one embodiment of the present specification, the metallization promoting layer (300) further comprises a Pd catalyst.

[0139] The silane coupling agent of the metallization promoting layer (300) is coupled with the glass substrate (100), and the silane coupling agent and the Pd coupling agent are coupled through functional groups capable of coupling with the silane coupling agent of the Pd coupling agent, and subsequently can be coupled with the Pd catalyst. When the metallization promoting layer (300) is placed, the metal surface treatment / electroless plating integrated process can be carried out as a wet process, and the metal layer (200) can be deposited well even on a glass substrate (100) with a high aspect ratio and a plating layer of uniform thickness can be formed.

[0140] In one embodiment of the present specification, the metallization promoting layer (300) includes one or more types of silane coupling agents.

[0141] Examples of silane coupling agents include those represented by the following formula (1).

[0142] Equation (1): R n -Si-X (4-n)

[0143] In the above formula (1), R is an organic group having 1 to 18 carbon atoms, X is a hydrolyzable group, and n is an integer from 1 to 3.

[0144] In one embodiment of the present specification, X may be one selected from the group consisting of an alkoxy group having 1 to 3 carbon atoms, such as a methoxy group, an ethoxy group, a propoxy group; a mercapto group; an alkyl mercapto group; an amino group; an alkylamine group; a condensed heterocyclic group; and a halogen atom such as a chlorine atom, or a group connected to two or more groups selected from said group.

[0145] In one embodiment of the present specification, when n is 1 or 2, a plurality of X are identical or different from each other.

[0146] In one embodiment of the present specification, n is an integer from 1 to 3, but is preferably 1 or 2, and particularly preferably 1.

[0147] As silane coupling agents that can be given by the above formula (1), methyltrimethoxysilane, methyltrimethoxysilane, hexyltrimethoxysilane, decyltrimethoxysilane, phenyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, 3-methacryloyloxypropyltrimethoxysilane, 3-methacryloyloxypropyltriethoxysilane, 3-acryloyloxytrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, N-(2-aminoethyl)-3-aminopropylmethyldimethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, Examples include N,N-dimethyl-3-aminopropyltrimethoxysilane, N,N-diethyl-3-aminopropyltrimethoxysilane, 4-styryltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, aminoethylaminopropyltrimethoxysilane, trimethoxy[2-7-oxabicyclo[4.1.0]hept-3-yl]ethyl]silane.

[0148] In one embodiment of the present specification, the metallization promoting layer (300) includes one or more types of Pd binders.

[0149] In one embodiment of the present specification, the Pd binder is a metal ion-containing compound. In one embodiment, the Pd binder comprises lithium ions or sodium ions.

[0150] In one embodiment of the present specification, the Pd binder comprises a functional group capable of being coupled to the silane coupling agent. In one embodiment, the Pd binder may comprise a carboxyl group as a functional group capable of being coupled to the silane coupling agent.

[0151] In one embodiment of the present specification, the Pd binder comprises an amino group; a hydroxyl group; a carboxyl group or a phosphonate group in a core of a tertiary amine structure, and comprises at least one metal ion. The Pd binder is -C(=O)O - M +; -P(=O)(OH)(O - M + ); or -P(=O)(O - M + It may include )2, and these functional groups have excellent ionic properties, so they are easily dissociated within the composition and can selectively react with the Pd catalyst. That is, the Pd binder has excellent binding strength with the Pd catalyst, so it can form a uniform metal layer during the plating process. The metal ions included in the Pd binder may be lithium ions or sodium ions.

[0152] In one embodiment of the present specification, the Pd binder may be represented by the following chemical formula 1-1 or 1-2.

[0153] [Chemical Formula 1-1]

[0154]

[0155] [Chemical Formula 1-2]

[0156]

[0157] In the above chemical formulas 1-1 and 1-2,

[0158] L1 to L3 are the same or different from each other and are each independently alkylene groups having 1 to 5 carbon atoms, and

[0159] Z is -OH; or -O - M + is,

[0160] Y1 to Y3 are the same or different from each other and each independently -OH; or -O - M + And,

[0161] M is Li; or Na.

[0162] In one embodiment of the present specification, the metallization promoting layer (300) may further include an additional Pd binder other than the Pd binder of the metal ion-containing compound. The additional Pd binder may not contain metal ions.

[0163] In one embodiment of the present specification, the Pd catalyst is Pd 2+ It may be a catalyst containing a ligand, but is not limited to any type used in the field of technology.

[0164] In one embodiment of the present specification, the Pd catalyst is [Pd-X] 2+ It may include a structure represented by, and X may include 2-vinylpyridine or 2-methylpyridine.

[0165] The above Pd binder is the Pd separated from the above Pd catalyst 2+ It can combine with ions or directly combine with the above Pd catalyst.

[0166] The above Pd catalyst is Pd within the metallization promoting layer (300). 2+ The ion may be in a reduced form as Pd metal.

[0167] The present specification provides a method for manufacturing a glass substrate (10).

[0168] FIG. 11 is a flowchart briefly illustrating a method for manufacturing a glass substrate (10) for a semiconductor package according to one embodiment of the present specification.

[0169] A method for manufacturing a glass substrate (10) for a semiconductor package according to one embodiment of the present specification comprises the step of preparing a mother glass containing sodium oxide;

[0170] A step of irradiating the above-mentioned mother glass with a laser to form a deformation region inside the above-mentioned mother glass;

[0171] A step of etching the above-mentioned mother glass to form a plurality of through holes; and

[0172] The method includes the step of forming a glass substrate by ion strengthening the mother glass having the above-mentioned through hole using a potassium solution.

[0173] The through hole manufactured as described above has an hourglass-shaped cross-section. The shape of the through hole is as previously stated.

[0174] A method for manufacturing a glass substrate (10) for a semiconductor package according to one embodiment of the present specification further comprises the steps of plating the surface of the glass substrate using a metallization-promoting composition; and filling through holes in the glass substrate.

[0175] FIGS. 12 to 17 are cross-sectional views showing a part of a method for manufacturing a glass substrate (10) according to one embodiment.

[0176] Referring to Fig. 12, a flat glass (101) is prepared.

[0177] In one embodiment of the present specification, the mother glass (101) comprises sodium oxide. In one embodiment, the mother glass (101) may comprise sodium oxide in an amount of 5% by weight or more, preferably 5% by weight or more and 30% by weight or less, more preferably 7% by weight or more and 20% by weight or less, and even more preferably 10% by weight or more and 15% by weight or less, relative to 100% by weight. In the above range, sufficient ion exchange with potassium ions occurs, and compressive stress can be strengthened.

[0178] Referring to FIG. 13, a through hole (H) and an inner surface (S1) are formed in a glass (101). The step of forming the plurality of through holes (H) may utilize a laser. Specifically, the through hole forming process may include a glass substrate laser phase displacement process; and a glass substrate hole etching process.

[0179] The above glass substrate laser phase displacement process is a process that induces deformation inside a glass substrate using laser phase displacement, and methods known in the art can be used. Lasers such as pico lasers or femto lasers can be used, and depending on the type of laser, the shape of the through hole and the internal illumination may vary.

[0180] The above glass substrate hole etching process is a process of forming through holes in the deformed portions within the glass substrate using an etching method, and methods known in the art may be used. The etching solution can etch the glass on the upper and lower surfaces of the glass substrate. The through holes manufactured as described above have an hourglass-shaped cross-section. The shape of the through holes is as described above.

[0181] Referring to FIG. 14, the mother glass (101) is subjected to ion strengthening treatment to increase the surface compressive stress. At this time, a potassium solution is used to exchange sodium ions in the glass with potassium ions in the solution, and larger potassium ions strengthen the compressive stress of the glass.

[0182] In one embodiment of the present specification, the potassium solution is a 100% potassium nitrate solution (melting point: 330°C).

[0183] In one embodiment of the present specification, the ion strengthening treatment step comprises immersing the mother glass (101) in the potassium solution at a temperature of 200°C to 600°C for 0.5 hours to 20 hours. In one embodiment, the immersion temperature of the ion strengthening treatment step is 200°C to 600°C, preferably 300°C to 500°C, more preferably 350°C to 450°C. In one embodiment, the immersion time of the ion strengthening treatment step is 0.5 hours to 20 hours, preferably 0.5 hours to 15 hours, more preferably 1 hour to 10 hours.

[0184] Through the ion strengthening treatment step, a glass substrate (100) including the aforementioned first region (110) and second region (120) can be obtained. Additionally, ion exchange may occur on the inner surface of the through hole, thereby increasing the compressive stress on the inner surface surrounding the through hole. Since the through hole has a symmetrical cross-section, chemical strengthening may occur uniformly on the inner surface as well.

[0185] Referring to FIG. 15, a metal thin film layer (210) can be formed on the surface of a glass substrate (100) through a first plating process. The first plating process may be called a glass substrate metallization process and may include an electroless plating process.

[0186] As a primary plating method, a method may be used in which a metal seed is formed through a metal sputtering (dry) process, and then a metal is deposited (wet) on the surface of a glass substrate (100) by electroless plating. As another primary plating method, a method may be used in which a metalization-promoting layer (not shown) is formed by performing a metalization-promoting treatment (wet) on the surface of a glass substrate (100), and then electroless plating (wet) is performed. As specific methods, methods known to those skilled in the art may be used.

[0187] Through a first plating process, a metal thin film layer (210) can be formed on a glass substrate (100) having a non-conductive surface. The metal thin film layer (210) is formed inside a through hole (S1) and on the upper surface (S2) and lower surface (S3) of the glass substrate (100).

[0188] In one embodiment of the present specification, the first plating step involves plating the surface of the glass substrate using a metallization-promoting composition and may include a pretreatment process, a metallization-promoting process, an electroless plating process, and an annealing process.

[0189] In one embodiment of the present specification, the pretreatment process cleans the mother glass and pretreats it to form hydroxyl groups on the surface of the mother glass.

[0190] In one embodiment of the present specification, the metallization promotion process surface-treats a base glass using a metallization promotion composition and treats the surface-treated base glass with a Pd catalyst to bond it to the surface.

[0191] In one embodiment of the present specification, the metallization promoting composition comprises the aforementioned silane coupling agent; and a Pd binder. When a mother glass having hydroxyl groups formed on its surface is treated with the aforementioned metallization promoting composition, a Pd binder can be bonded to the surface of the mother glass.

[0192] In one embodiment of the present specification, the metallization promoting composition may further include an additional Pd binder other than the Pd binder of the metal ion-containing compound.

[0193] In one embodiment of the present specification, the metallization promoting composition may further comprise a phase stabilizer selected from hydrochloric acid; sulfuric acid; methanol; ethanol; isopropyl alcohol; and sodium hydroxide.

[0194] In one embodiment of the present specification, the metallization-promoting composition may further comprise a solvent. In one embodiment, the solvent may be water.

[0195] In one embodiment of the present specification, the metallization promoting composition further comprises a solvent, and based on 100 parts by weight of the total metallization promoting composition, the composition comprises 0.1 to 5 parts by weight of the silane coupling agent and 0.3 to 5 parts by weight of the Pd binder, and the remainder may be a solvent.

[0196] In one embodiment of the present specification, the metallization promoting composition further comprises a solvent; a phase stabilizer; and an additional Pd binder, and based on 100 parts by weight of the total metallization promoting composition, the composition comprises 0.3 to 2 parts by weight of the silane coupling agent, 0.5 to 3 parts by weight of the Pd binder, 1 to 10 parts by weight of the phase stabilizer, 0.3 to 3 parts by weight of the additional Pd binder, and the remainder may be a solvent.

[0197] In one embodiment of the present specification, the method of treating with the metallization-promoting composition utilizes a spray or dipping method.

[0198] In one embodiment of the present specification, the Pd catalyst is the same as the Pd catalyst described in the metallization promoting layer (300) described above. When a mother glass with a Pd binder bonded to its surface is treated with the Pd catalyst, the Pd catalyst is bonded to the Pd binder.

[0199] In one embodiment of the present specification, the method of treating with the Pd catalyst utilizes a dipping method.

[0200] In one embodiment of the present specification, the glass substrate metallization promoting process may further include a Pd catalyst reduction process. Specifically, the Pd catalyst reduction process comprises the Pd of the Pd catalyst. 2+ It may be a process of reducing ions to Pd metal.

[0201] In one embodiment of this specification, the Pd catalyst reduction process may be applied using any method known in the art.

[0202] Referring to FIG. 16, a metal thin film layer (210) can be expanded through a secondary plating process to form a metal filling layer (220). The secondary plating process may include an electroplating process. Through the secondary plating, the entire through hole is filled with metal, and a thick metal layer is also formed on the upper surface (S2) and lower surface (S3) of the glass substrate (100).

[0203] Referring to FIG. 17, the surface is flattened by removing the metal layer formed on the upper surface (S2) and lower surface (S3) of the glass substrate (100). During the flattening process, a portion of the thickness of the upper surface (S2) and lower surface (S3) of the glass substrate (100) may be removed. The upper surface of the metal layer (200) filled in the through hole may be aligned with the upper surface (S2) of the glass substrate (100), and the lower surface of the metal layer (200) may be aligned with the lower surface (S3) of the glass substrate (100).

[0204] Although not illustrated in the drawings, insulating layers can be laminated on a metal layer (200) and a glass substrate (100) through a method known to those skilled in the art, and then a glass substrate unit for a semiconductor package can be obtained through a singulation process.

[0205] According to the present specification, a glass substrate may be used for semiconductor packaging. Specifically, a glass substrate according to the present specification may be used to package semiconductor chips / devices. More specifically, semiconductor packaging is a general term for post-processing technology that cuts a finished wafer into chip form and packages it, and the glass substrate is attracting attention as a next-generation semiconductor packaging material that plays a role in physically / electrically connecting semiconductor chips to a system. In order to be used as a semiconductor packaging material, roles such as mechanical protection, electrical / mechanical connection, and heat dissipation are required. In particular, the TGV hole substrate includes fine electrode channels that facilitate the flow of electricity in the glass substrate, which has the advantage of enabling the mounting of more chips and high-performance chips.

[0206] According to the present specification, a metallized glass substrate can be applied to packaging fields requiring a large area, such as AI, High Performance Computer (HPC), Data Center, Server, and Networking, and can be applied particularly to generative AI and HPC.

[0207] Hereinafter, to specifically explain this specification, examples will be described in detail. However, the embodiments according to this specification may be modified in various different forms, and the scope of this specification is not to be interpreted as being limited to the embodiments described below. The embodiments of this specification are provided to more completely explain this specification to those with average knowledge in the art.

[0208] (1) Preparation of glass substrate and formation of through holes

[0209] A glass substrate with the composition shown in Table 1 below was subjected to internal deformation through pico laser phase displacement, and then etched to form an hourglass-shaped through hole.

[0210] Glass Substrate 1 Glass Substrate 2 Thickness (mm) 0.6 4 0.5 9 Glass Composition (Wt%) SiO2 5.9 7 7.9 B2O3 12.2 Na2O 12.7 3.2 MgO 1.3 Al2O3 19.9 2.3 CaO rO Z rO2 0.2 3.3 SnO2 4.4 K2O 1.0 ZnOT iO2 CO2 5.6 Through-hole Internal Roughness (㎛) 4.5 0.5

[0211] The measured values ​​of the internal roughness of the through holes of the glass substrates are listed in Table 1 above. An image of a portion of the thickness of the through hole of glass substrate 1 was observed using a 3D confocal microscope and is shown in Fig. 18. The internal roughness of the through hole was measured using the Ra measurement mode of a Keyence 3D confocal microscope, and the magnification of the 3D confocal microscope image is 200x.

[0212] Cross-sections obtained by cross-cutting the cross-sections passing through the centers of the through-holes of glass substrates 1 and 2 were observed using a scanning electron microscope (SEM) or an optical microscope (OM) and are shown in FIGS. 19 to 21. FIG. 19 is an SEM image of glass substrate 1, FIG. 20 is an SEM image of glass substrate 2, and FIG. 21 is an OM image of glass substrate 2.

[0213] Ten through holes in glass substrates 1 and 2 were observed, and the average values ​​are shown in Table 2 below. The first diameter (R1) is the diameter of the through hole at the top surface of the glass substrate, the second diameter (R2) is the diameter of the through hole at the 1 / 2 thickness point of the glass substrate, and the third diameter (R3) is the diameter of the through hole at the bottom surface of the glass substrate. The first to third diameters were measured by vertically cross-cutting glass substrates 1 and 2 with a cutting line passing through the center of the through holes. Roundness is a numerical representation of how close the shape of the cross-section of the through hole is to an ideal circle when viewed from the top-view side, and is defined as the difference between the maximum and minimum values ​​among the diameters passing through the center of the through hole. The smaller the roundness value, that is, the smaller the difference between the maximum and minimum diameters, the closer the cross-section of the through hole is to a circle.

[0214] Through-hole Glass Substrate 1 Glass Substrate 2 Cross-cut Thickness (T1) (㎛) 63.9.860.9.6 First, Third Diameters (R1, R3) (㎛) 96.77.4.9 Second Diameter (R2) (㎛) 81.44.3.6 R1 / R2 1.21.7 Aspect Ratio (T1 / R1) 6.68.1 Top View Roundness (㎛) 3.70 Hole Density (ea / cm²) 2 )8380

[0215] From Tables 1 and 2 above, it can be seen that when internal deformation of a glass substrate is caused by laser phase displacement and then etched, an hourglass-shaped through-hole can be formed. For thin film glass substrates 1 and 2, a circular shape with a small diameter and a roundness of 0 or close to 0 can be realized, and an hourglass-shaped through-hole with a large aspect ratio is formed.

[0216]

[0217] (2) Ion strengthening treatment and compressive stress evaluation

[0218] The above glass substrate 1 was subjected to an ion exchange reaction under immersion conditions as shown in Table 2 below with varying thicknesses, and the surface compressive stress and the depth of compressive stress reinforcement on the upper and inner surfaces were measured. At this time, the surface compressive stress and the depth of compressive stress reinforcement on the upper surface (D11) were measured using an FSM6000LE (manufacturer: ORIHARA INDUSTRIAL CO. LTD).

[0219] Example 1-1 Example 1-2 Example 1-3 Example 1-4 Comparative Example 1-1 Thickness of glass substrate (T1) (㎛) 640 640 640 400 640 Ion strengthening conditions Solution KNO3 KNO3 KNO3 KNO3 KNO3 Temperature (°C) 380 380 420 380 Time (hr) 164 10 Strengthening result Surface compressive stress (MPa) 900 910 740 830 40 Upper surface compressive stress Strengthening depth (㎛) 103 140 6 N.D

[0220] Verification of the depth of compressive stress reinforcement on the inner surface of the through hole

[0221] For Examples 1-3 and 1-4, the compressive stress reinforcement depths (D1, D2, D3, D4, D5) on the inner surface (S1) were measured by the following method at points less than 1 / 4, 1 / 4, 1 / 2, 3 / 4, and more than 3 / 4 of the thickness (T1) of the glass substrate. The glass substrate was cross-cut using a laser or a glass knife with a cutting line passing through the center of the through hole. The interior of the exposed through hole was analyzed through Energy Dispersive X-ray Spectroscopy (EDS) analysis of a Scanning Electron Microscope (SEM). Specifically, the potassium (K) ion distribution was observed through a K mapping image, and the depth of penetration of potassium (K) from the surface of the glass substrate into the interior was obtained. The penetration depth of potassium is the depth measured in a direction parallel to the first surface (top surface) or the second surface (bottom surface) of the glass substrate, i.e., in the longitudinal direction or the plane direction. The compressive stress depth is the depth of the starting point of the region where the potassium (K) concentration remains constant in the SEM-EDS image.

[0222] SEM images of Examples 1-4 before ion strengthening treatment are shown in FIG. 22, and SEM-EDS images after ion strengthening treatment are shown in FIG. 23. The difference (a2-a1) between the diameter of the through hole (a1=57㎛) measured through the image in FIG. 22 and the length of the potassium distribution in the longitudinal direction (a2=68㎛) in the image in FIG. 23 is calculated and divided by 2 to obtain the depth of compressive stress strengthening on the inner surface of the through hole.

[0223] The compressive stress reinforcement depth (D11) of the upper surface measured for Examples 1-3 and 1-4; the compressive stress reinforcement depths (D1, D2, D3, D4, D5) of the inner surface with thicknesses less than 1 / 4, 1 / 4, 1 / 2, 3 / 4, and more than 3 / 4; and the compressive stress reinforcement depth (D12) of the lower surface are shown in Table 4 below.

[0224] Unit (㎛) D11 D1 D2 D3 D4 D5 D12 Example 1-3 40 39.5 39 38 39 39.5 40 Example 1-4 6 5.5 45.5 6.5 56 Comparative Example 1-1 N.DN.DN.DN.DN.DN.DN.DN.D

[0225] Confirmation of potassium oxide and sodium oxide content

[0226] As a result of checking the potassium oxide and sodium oxide content on the upper surface of the glass substrate using WD-XRF, it was confirmed that the surfaces of the ion-enhanced glass substrates of Examples 1-1 to 1-4 contained 0 to less than 5 wt% sodium oxide and 3 wt% or more potassium oxide.

[0227] The glass substrates of Examples 1-1 to 1-4 were subjected to dry etching or wet etching to remove the glass to a depth greater than the upper surface compressive stress depth of Table 1 mentioned above. Subsequently, the potassium oxide and sodium oxide content on the upper surface of the partially removed glass substrates was checked using WD-XRF, and it was confirmed that the surfaces of the ion-enhanced glass substrates of Examples 1-1 to 1-4 contained 5 wt% or more of sodium oxide.

[0228]

[0229] (3) Plating and evaluation

[0230] <Example 2-1>

[0231] Aminoethylaminopropyltrimethoxysilane (1.0 wt%) as a silane coupling agent, HCl (2.0 wt%) and isopropyl alcohol (1.0 wt%) as phase stabilizers, LCC-1 (0.5 wt%) and Q3 (1.5 wt%) as Pd binders were added to ultrapure water (remainder), and then stirred at room temperature for 2 hours to prepare a metallization promoting composition.

[0232] The LCC-1 used at this time is C6H 9-n NO6Li n With (n=2), 90 g (5 mol) of solvent (ultrapure water) and 8.6 g (0.2 mol) of LiOH·H2O were added to a reaction flask, and 19.6 g (0.1 mol) of nitrilotriacetic acid was mixed and stirred at room temperature for 2 hours to obtain 19.5 g of solid LCC-1. In addition, the Pd binder Q3 is as follows.

[0233] [Q3]

[0234]

[0235] The ion-strengthened glass substrate of Examples 1-4 prepared above was cleaned and pretreated to form -OH groups on the glass surface. Then, the glass substrate was immersed in the metallization-promoting composition prepared above (room temperature, 5 minutes).

[0236] Afterwards, the glass substrate was treated with a Pd catalyst (dipping, 40°C, 5 min) and then reduced (dipping, 30°C, 3 min), electroless plating was performed using copper (dipping, 34°C, 20 min), and finally, an annealing process (230°C, 60 min) was performed to complete the first plating.

[0237] <Comparative Example 2-1>

[0238] The glass substrate of Comparative Example 1-1 prepared above was Ti / Cu sputtered to form a metal seed on the surface of the glass substrate.

[0239] Afterwards, electroless plating (dipping, 34℃, 20 min) was performed using copper, and finally, an annealing process (230℃, 60 min) was performed to complete the first plating.

[0240] <Comparative Example 2-2>

[0241] The glass substrate of Comparative Example 1-1 prepared above was Cu sputtered to form a metal seed on the surface of the glass substrate.

[0242] Afterwards, electroless plating (dipping, 34℃, 20 min) was performed using copper, and finally, an annealing process (230℃, 60 min) was performed to complete the first plating.

[0243] <Comparative Example 2-3>

[0244] The first plating was performed in the same manner as in Example 2-1, but using the glass substrate of Comparative Example 1-1 instead of the glass substrate of Example 1-4.

[0245]

[0246] The characteristics of the glass substrates that were first plated in Example 2-1 and Comparative Examples 2-1 to 2-3 were evaluated and listed in Table 5 below. The evaluation method for the characteristics listed in Table 5 below is as follows, and the through-hole electroplating porosity evaluation and thermal shock evaluation were performed up to the second plating (electroplating).

[0247] Plating filling rate

[0248] The copper volume ratio (copper filling rate) to the through-hole volume of the plated glass substrate was calculated. The voids within the through-holes were measured using X-rays with a Keyence 3D confocal microscope to determine the void %, and the value obtained by subtracting the void % from 100% was set as the plating filling rate.

[0249] plating uniformity

[0250] After photographing the plated glass substrate, the plating uniformity was confirmed by visual evaluation, and the results were indicated as O (100% plating), □ (75% or more plating), △ (50% or more plating), and X (less than 50% plating).

[0251] Specifically, the plating uniformity (visual evaluation) was based on the criteria in Fig. 24.

[0252] Room temperature adhesion (Cross-cut evaluation)

[0253] At room temperature, the plated glass substrate was formed into a grid using a cross-cutter (TOC AT-CC3000 / ASTM1), then an adhesive tape (3M 8981 25mm X 10m (7.6N), TOC sp3020) was applied and peeled off, and the shape of the remaining grid was judged. The judgment criteria were based on the ASTM D3359-08 standard.

[0254] HAST adhesion

[0255] The plated glass substrate was left for 96 hours at a temperature of 130°C and a humidity of 85%, and then the evaluation of the room temperature adhesion was carried out in the same manner as the above.

[0256] Plating coverage ratio

[0257] The above plating coverage ratio refers to the average value of the P2 / P1 ratio, P3 / P1 ratio, and P4 / P1 ratio, after measuring the Cu thickness (P1) on the surface (top surface) of the glass substrate and the Cu thickness (P2, P3, and P4) according to location within the through hole of the glass substrate by cutting the metallized glass substrate in cross-section with a Focused Ion Beam (FIB) (see FIG. 25).

[0258] The above-mentioned plated glass substrate was cross-sectionally cut by a Focused Ion Beam (FIB) to measure the thickness (P1) of the metal thin film layer at a position 100 μm away from the through hole on the upper surface of the glass substrate, the thickness (P2) of the metal thin film layer at a through hole position 25% away from the upper surface of the glass substrate when the thickness of the glass substrate is set to 100%, the thickness (P3) of the metal thin film layer at a through hole position 50% away, and the thickness (P4) of the metal thin film layer at a through hole position 75% away. Then, the ratio of P2 / P1, the ratio of P3 / P1, and the ratio of P4 / O1 were each calculated, and the average value thereof was evaluated as the plating coverage ratio. Specifically, it can be calculated using the following Equation 1.

[0259] [Mathematical Formula 1]

[0260]

[0261] Through-hole electroplating porosity

[0262] Through-holes were filled and Cu was plated on the upper and lower surfaces of the substrate via electrolytic plating (secondary plating). The surface including the through-holes was milled and observed under an optical microscope, and the ratio of the void area (where no plating was formed) to the total plating area was evaluated according to the following criteria.

[0263] O (void < 15%), △ (void: 15~40%), X (void > 40%)

[0264] Thermal shock evaluation (evaluation of crack induction around penetration holes)

[0265] After filling the through-holes through electroplating (secondary plating) and plating Cu on the upper and lower surfaces of the substrate, the Cu on both sides was removed using CMP to flatten the surface. Subsequently, the substrate was left at 350°C for 1 hour (thermal shock test) to check for cracks around the through-holes of the glass substrate.

[0266] O: No crack, X: Crack occurred

[0267]

[0268] Example 2-1 Comparative Example 2-1 Comparative Example 2-2 Comparative Example 2-3 Glass Substrate Ion Enhancement O (Example 1-4) X (Comparative Example 1-1) X (Comparative Example 1-1) X (Comparative Example 1-1) Primary Plating Metal Surface Treatment Ti / Cu Sputtering Cu Sputtering Metal Surface Treatment Plating Filling Rate 100% < 70% < 50% < 90% Plating Uniformity OO △ O Room Temperature Adhesion 5 B 4 B 1 B 5 B HAST Adhesion 5 B 0~2 B 0 B 5 B Plating Coverage Ratio 85% 50% < 30% 85% Through-hole Electroplating Porosity O △ X O 350℃ Thermal Shock Evaluation OX XX

[0269] Example 2-1, using the glass substrate prepared in Examples 1-4 above, showed excellent performance in plating uniformity, adhesion, plating coverage, electroplating porosity, and thermal shock evaluation.

[0270] Comparative Example 2-1, which used the glass substrate of Comparative Example 1-1 without surface reinforcement, showed high plating uniformity in the first plating through Ti / Cu sputtering. However, it showed low performance in adhesion, plating coverage, electroplating porosity, and thermal shock evaluation.

[0271] Comparative Example 2-2 was conducted in the same manner as Comparative Example 2-1, except for the electroless plating (first plating) of Cu sputtering. It showed low performance in plating uniformity, adhesion, plating coverage, electroplating porosity, and thermal shock evaluation.

[0272] Comparative Example 2-3 was conducted in the same manner as Example 2-1, except that the glass substrate of Comparative Example 1-1, which was not ion-strengthened, was used. Although it showed high performance in plating uniformity, adhesion, plating coverage, and electroplating porosity, it showed low performance in thermal shock evaluation.

[0273] (4) Singulation and Evaluation

[0274] The glass substrate, which was first plated in Example 2-1 above, was subjected to post-processing steps including second plating, planarization, and insulating layer lamination, followed by singulation. Specifically, a Cu metal pattern was formed along the singulation location using a photosensitive material on both sides of the glass substrate after the post-processing was completed, and an insulating layer was formed by laminating multiple layers of ABF (Ajinomoto Build-up Film) on both sides of the glass substrate. The insulating layer on the Cu pattern was removed using a UV laser. A protective layer was formed on the insulating layer using a photosensitive material, and subsequently, the Cu pattern was removed using a metal etching solution. The exposed glass substrate in the area where the Cu pattern was removed was subjected to phase displacement at 1 μm intervals using a 400 femtosecond laser (38 μJ), and then both sides of the glass substrate were singulated using a glass etching solution to form a glass substrate unit. Subsequently, the protective layer was removed using a dedicated stripper. At this time, no breakage occurred in the glass substrate, and there were no cracks on the cut surface. In addition, the taper angle of the cut surface was 65°, and the roughness of the cut surface was 0.6 μm.

Claims

1. A glass substrate comprising a first surface and a second surface facing each other, an inner surface connecting the first surface and the second surface and defining a through hole; and It includes a metal layer disposed in the through hole of the glass substrate, The above glass substrate includes a first region extending from the inner surface and having compressive stress, and The through hole has a first diameter on the first surface, a second diameter at half the thickness of the glass substrate, and a third diameter on the second surface, The first diameter is larger than the second diameter, and the third diameter is larger than the second diameter, and A glass substrate for a semiconductor package, wherein the metal layer fills 90 vol% or more of the through hole.

2. In Claim 1, A glass substrate for a semiconductor package, wherein the thickness of the glass substrate is at least six times the first diameter of the through hole.

3. In Claim 1, D3 / D11 is between 0.7 and 1.3, and D2 / D3 is between 0.7 and 1.3, and The above D11 is the compressive stress reinforcement depth of the first surface, and The above D2 is the depth of compressive stress reinforcement on the inner surface at a point 1 / 4 of the thickness of the glass substrate, and A glass substrate for a semiconductor package, wherein D3 is the compressive stress reinforcement depth of the inner surface at a point 1 / 2 of the thickness of the glass substrate.

4. In Claim 3, D1 / D3 is between 0.7 and 1.3, and D4 / D3 is between 0.7 and 1.3, and The above D1 is the depth of compressive stress reinforcement on the inner surface at a point less than 1 / 4 of the thickness of the glass substrate, and A glass substrate for a semiconductor package, wherein D4 is the compressive stress reinforcement depth of the inner surface at a point 3 / 4 of the thickness of the glass substrate.

5. In Claim 1, A glass substrate for a semiconductor package, wherein the through hole has a minimum diameter at half the thickness of the glass substrate and has a diameter that increases continuously in the direction of the first surface and the second surface, respectively, at half the thickness.

6. In Claim 1, A glass substrate for a semiconductor package, wherein the first diameter is 1.01 times or more and 2 times or less the second diameter.

7. In Claim 1, A glass substrate for a semiconductor package, wherein the first diameter is 10㎛ or more and 500㎛ or less.

8. In Claim 1, The density of the above through holes is 50ea / cm² 2 Lee Sang-in, glass substrate for semiconductor packaging.

9. In Claim 1, A glass substrate for a semiconductor package, wherein the thickness of the glass substrate is 0.15 mm or more and 1.5 mm or less.

10. In Claim 1, A glass substrate for a semiconductor package, wherein the compressive stress reinforcement depth of the first surface of the glass substrate is 2㎛ or more.

11. In Claim 1, A glass substrate for a semiconductor package, wherein the surface compressive stress of the first surface of the glass substrate is 100 MPa or more.

12. In Claim 1, A glass substrate for a semiconductor package, wherein the surface roughness of the inner surface is 0.2㎛ or more and 15㎛ or less.

13. In Claim 1, The glass substrate comprises a first region containing 0 to less than 5 weight percent sodium oxide and 3 weight percent or more potassium oxide; and A glass substrate for a semiconductor package comprising a second region containing 3 weight percent or more of sodium oxide.

14. In Claim 13, The first region is a glass substrate for a semiconductor package that is adjacent to the surface of the glass substrate compared to the second region.

15. In Claim 1, A glass substrate for a semiconductor package, further comprising a metallization promoting layer disposed between the inner surface of the glass substrate and the metal layer.

16. In Claim 15, The above metallization promoting layer comprises a silane coupling agent; and a Pd coupling agent, a glass substrate for a semiconductor package.

17. Step of preparing a mother glass containing sodium oxide; A step of irradiating the above-mentioned mother glass with a laser to form a deformation region inside the above-mentioned mother glass; A step of etching the above-mentioned mother glass to form a plurality of through holes; and The method includes the step of forming a glass substrate by ion strengthening the mother glass having the above-mentioned through hole using a potassium solution. A method for manufacturing a glass substrate for a semiconductor package, wherein the through hole has an hourglass-shaped cross section.

18. In Claim 17, The above potassium solution is a potassium nitrate solution, and A method for manufacturing a glass substrate for a semiconductor package, wherein the step of the ion strengthening treatment comprises immersing the mother glass in the potassium solution at a temperature of 200°C to 600°C for 0.5 hours to 20 hours.

19. In Claim 17, A step of plating the surface of the glass substrate using a metallization-promoting composition; and A method for manufacturing a glass substrate for a semiconductor package, further comprising the step of filling through holes in the glass substrate.

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