Semiconductor detection structures for die cracking screening test and method for forming the same
The semiconductor detection structure with a high-brittleness trace embedded in the substrate effectively detects cracks in integrated circuits by monitoring conductivity changes, addressing the limitations of existing systems and enhancing manufacturing reliability.
WO2026128136A1PCT designated stage Publication Date: 2026-06-18QORVO US INC
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- QORVO US INC
- Filing Date
- 2025-11-07
- Publication Date
- 2026-06-18
Smart Images
Figure US2025054529_18062026_PF_FP_ABST
Abstract
A semiconductor detection structure for a die cracking screening test (DCST) is provided. The semiconductor detection structure includes a semiconductor layer embedded in a semiconductor die. The semiconductor layer may be embedded in a semiconductor substrate of the semiconductor die; a brittleness of the semiconductor layer is higher than or equal to a brittleness of the semiconductor substrate; and the semiconductor layer extends in a peripheral region of the semiconductor die.
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