Integrated planar mosfet and trench schottky barrier diode and methods to manufacture same

Abstract

An apparatus including a planar metal oxide semiconductor field-effect transistor and a trench Schottky barrier diode that are physically and functionally integrated into a single, continuous structure, and a method of making such an apparatus. The integrated, trench Schottky barrier diode is located over a junction field-effect transistor neck region which is adjacent to the planar metal oxide semiconductor field-effect transistor. The Schottky barrier diode and the planar metal oxide semiconductor field-effect transistor may be located in a single, continuous volume of semiconductor material. The planar metal oxide semiconductor field-effect transistor may include first and second transistor sides spaced on opposite sides of the junction field-effect transistor neck region, such that the trench Schottky barrier diode may be located between the first and second transistor sides.

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