Method of forming image sensor including air grid

A multi-step process forms an air gap grid in image sensors using controlled deposition techniques to enhance light transmission and reduce crosstalk, improving reliability and geometry in CMOS image sensors.

WO2026128353A1PCT designated stage Publication Date: 2026-06-18APPLIED MATERIALS INC

Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
APPLIED MATERIALS INC
Filing Date
2025-12-08
Publication Date
2026-06-18

AI Technical Summary

Technical Problem

Existing image sensors, such as CMOS image sensors, face issues with light transmission due to metal or oxide grids causing crosstalk between pixels, especially with smaller pixel sizes, and existing air gap grids suffer from non-ideal geometry, low reliability, and high cost.

Method used

A multi-step lithography and fill material deposition process is used to form an air gap grid with precise geometry control, utilizing low-temperature oxide deposition and plasma-enhanced atomic layer deposition to create voids and seal trenches, enhancing structural integrity and reliability.

🎯Benefits of technology

The method achieves improved light transmission and reduced crosstalk between pixels while maintaining precise geometry and reliability, addressing the limitations of existing air gap grids.

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Abstract

Disclosed herein are approaches for forming an air grid of an image sensor. One method may include depositing a first fill material within a first plurality of trenches to form a plurality of grid structures, wherein the first plurality of trenches is formed through an oxide layer formed over a substrate, wherein the fill material is formed along a sidewall and a bottom surface of each trench of the plurality of trenches, and wherein a void is formed within the fill material. The method may further include forming a second plurality of trenches through the oxide layer and the first fill material.
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