Schottky diodes with embedded semiconductor structures
The Schottky diode with embedded semiconductor structures addresses high reverse bias leakage by forming merged depletion regions, ensuring low leakage and low forward voltage drop for improved performance in electronic systems.
WO2026128404A1PCT designated stage Publication Date: 2026-06-18TEXAS INSTRUMENTS INC
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- TEXAS INSTRUMENTS INC
- Filing Date
- 2025-12-09
- Publication Date
- 2026-06-18
AI Technical Summary
⚠Technical Problem
Schottky diodes suffer from high reverse bias leakage due to low work function or energy barrier, which compromises their performance in low power and high-frequency applications.
⚗Method used
The Schottky diode incorporates embedded semiconductor structures with strategically designed dopant regions and ohmic and Schottky junctions to form contiguous depletion regions that merge under reverse bias, reducing leakage and maintaining low forward voltage drop.
🎯Benefits of technology
The solution effectively reduces reverse bias leakage while preserving low forward voltage drop, enhancing performance in communications and power conversion applications.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure US2025058677_18062026_PF_FP_ABST
Abstract
A Schottky diode (101) includes a semiconductor layer (102, 104) having first, second and third portions, the first and second portions of the semiconductor layer (102, 104) located on opposite lateral sides of the third portion of the semiconductor layer (102, 104), first and second embedded semiconductor structures (120) extending into the respective first and second portions of a semiconductor layer (102, 104), the second embedded semiconductor structure (120) having a convex side laterally spaced apart from and facing the first embedded semiconductor structure (120), and a conductive layer (110) having contiguous first, second and third portions, the first portion of the conductive layer (110) on and contacting the first embedded semiconductor structure (120), the second portion of the conductive layer (110) on and contacting the second embedded semiconductor structure (120), and the third portion of the conductive layer (110) on and contacting the third portion of the semiconductor layer (102, 104).
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