Solid-state imaging device and imaging device

WO2026133728A1PCT designated stage Publication Date: 2026-06-25SONY SEMICON SOLUTIONS CORP

Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
SONY SEMICON SOLUTIONS CORP
Filing Date
2025-10-23
Publication Date
2026-06-25

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  • Figure JP2025037351_25062026_PF_FP_ABST
    Figure JP2025037351_25062026_PF_FP_ABST
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Abstract

[Problem] To provide a solid-state imaging device and an imaging device that are capable of suppressing deterioration in spectral characteristics of a multispectral image and deterioration in image quality of an RGB image even when RGB pixels and multispectral pixels are mixedly mounted in a pixel array section. [Solution] A solid-state imaging device according to the present disclosure comprising a pixel array section in which a plurality of pixels are arranged in a matrix, wherein: a first optical filter having transmission characteristics or a second optical filter having transmission characteristics different from those of the first optical filter is provided as a color filter on a photoelectric conversion element included in each of the pixels; and the second optical filter has a filter size larger than that of the first optical filter.
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Claims

1. A solid-state imaging device comprising a pixel array section in which multiple pixels are arranged in a matrix, wherein a first optical filter having transmission characteristics as a color filter, or a second optical filter having transmission characteristics different from the first optical filter, is provided on the photoelectric conversion element included in each pixel, and the second optical filter has a larger filter size than the first optical filter.

2. The solid-state imaging apparatus according to claim 1, wherein one of the second optical filters is provided across a plurality of photoelectric conversion elements.

3. The solid-state imaging apparatus according to claim 1, wherein the plurality of photoelectric conversion elements provided with the first optical filter are arranged in an effective pixel region used for acquiring an image, and the plurality of photoelectric conversion elements provided with the second optical filter are arranged in a peripheral region of the effective pixel region.

4. The solid-state imaging apparatus according to claim 1, wherein the second optical filter has transmission characteristics that transmit light with a narrower bandwidth than the first optical filter.

5. The solid-state imaging apparatus according to claim 2, wherein a single focusing lens is provided on each of the multiple photoelectric conversion elements that span across one of the second optical filters.

6. The solid-state imaging apparatus according to claim 5, wherein a plurality of photoelectric conversion elements, each provided across a single second optical filter, sum the charges stored in each to output a single pixel signal.

7. The solid-state imaging apparatus according to claim 2, wherein the plurality of photoelectric conversion elements provided across one of the second optical filters include one or more photoelectric conversion elements that are not used as pixel signals.

8. The solid-state imaging apparatus according to claim 2, wherein a space is provided between two adjacent second optical filters among a plurality of the second optical filters.

9. The solid-state imaging apparatus according to claim 1, wherein each of the second optical filters is an FP (Fabry-Perot) filter having an FP structure.

10. The solid-state imaging apparatus according to claim 9, wherein the second optical filter includes a metal reflector layer.

11. The solid-state imaging apparatus according to claim 9, wherein the second optical filter includes a dielectric multilayer reflective mirror layer.

12. The solid-state imaging apparatus according to claim 9, wherein the second optical filter includes a resonator having a metamaterial structure.

13. The solid-state imaging apparatus according to claim 9, wherein the second optical filter includes resonators of different film thicknesses between a plurality of pixels.

14. The solid-state imaging apparatus according to claim 1, wherein each of the second optical filters is a Surface Plasmon Resonance (SPR) filter having a thin metal film layer.

15. The solid-state imaging apparatus according to claim 1, wherein each of the second optical filters is a GMR (Guided Mode Resonance) filter having a diffraction grating layer with periodically arranged grating portions.

16. An imaging device comprising a solid-state imaging device, wherein the solid-state imaging device comprises a pixel array section in which a plurality of pixels are arranged in a matrix, and on each of the photoelectric conversion elements contained in the pixel, a first optical filter having transmission characteristics as a color filter, or a second optical filter having transmission characteristics different from the first optical filter, wherein the second optical filter has a larger filter size than the first optical filter.

17. The imaging apparatus according to claim 16, wherein one of the second optical filters is provided across a plurality of photoelectric conversion elements.

18. The imaging apparatus according to claim 16, wherein the plurality of photoelectric conversion elements provided with the first optical filter are arranged in an effective pixel region used for acquiring an image, and the plurality of photoelectric conversion elements provided with the second optical filter are arranged in a peripheral region of the effective pixel region.

19. The imaging apparatus according to claim 16, wherein the second optical filter has transmission characteristics that transmit light with a narrower bandwidth than the first optical filter.

20. The imaging apparatus according to claim 16, wherein each of the second optical filters is an FP filter having an FP structure.