High-frequency module and communication device

Abstract

A high-frequency module (1) comprises a module board (90), a power amplification circuit (10), a low-noise amplification circuit (20), a filter (31) having a passband including the transmission band of a band A, a filter (32) having a passband including a band B (TDD band), and semiconductor components (41 and 42), wherein: the semiconductor component (41) includes a switch (501) connected between the power amplification circuit (10) and the filter (31); and the semiconductor component (42) includes a switch (502) connected between the filter (31) and an antenna connection terminal (101), a switch (503) connected between the filter (32) and an antenna connection terminal (102), a switch (504) connected between the filter (32) and the power amplification circuit (10), and a switch (505) connected between the filter (32) and the low-noise amplification circuit (20).

Description

High-Frequency Module and Communication Device

[0001] The present invention relates to a high-frequency module and a communication device.

[0002] In mobile communication devices such as mobile phones, with the progress of multi-band technology, a high-frequency module has been proposed in which a plurality of filters can be selectively connected to a power amplifier via a switch circuit. For example, Patent Document 1 discloses a high-frequency module including a switch circuit that can switch between a plurality of transmission paths and can switch between a transmission path and a reception path in a TDD (Time Division Duplex) mode.

[0003] Japanese Unexamined Patent Application Publication No. 2016-042696

[0004] However, in the above conventional technology, the reception sensitivity may decrease when signals of a plurality of bands are transmitted and received simultaneously.

[0005] Therefore, the present invention provides a high-frequency module and a communication device capable of suppressing a decrease in reception sensitivity.

[0006] A high-frequency module according to an aspect of the present invention includes a module substrate, a power amplification circuit disposed on the module substrate, a low-noise amplification circuit disposed on the module substrate, a first filter disposed on the module substrate and having a passband including a transmission band of a first band, a second filter disposed on the module substrate and having a passband including a second TDD band, a first semiconductor component and a second semiconductor component disposed on the module substrate. The first semiconductor component includes a first switch connected between the power amplification circuit and the first filter, and the second semiconductor component includes a second switch connected between the first filter and a first antenna connection terminal, a third switch connected between the second filter and a second antenna connection terminal, a fourth switch connected between the second filter and the power amplification circuit, and a fifth switch connected between the second filter and the low-noise amplification circuit.

[0007] A communication device according to one aspect of the present invention comprises a signal processing circuit configured to process high-frequency signals, and a high-frequency module configured to transmit high-frequency signals between the signal processing circuit and an antenna.

[0008] According to the present invention, it is possible to suppress the decrease in receiving sensitivity.

[0009] Figure 1 is a configuration diagram of a communication device according to Embodiment 1. Figure 2 is a circuit diagram of a high-frequency module according to Embodiment 1. Figure 3 is a diagram illustrating the first state of a predetermined mode of the high-frequency module according to Embodiment 1. Figure 4 is a diagram illustrating the second state of a predetermined mode of the high-frequency module according to Embodiment 1. Figure 5 is a plan view of the high-frequency module according to Embodiment 1. Figure 6 is a plan view of the high-frequency module according to Embodiment 1. Figure 7 is a cross-sectional view of the high-frequency module according to Embodiment 1. Figure 8 is a plan view of a semiconductor component according to Embodiment 1. Figure 9 is a plan view of the high-frequency module according to Embodiment 1. Figure 10 is a plan view of the high-frequency module according to Embodiment 1. Figure 11 is a circuit diagram of a high-frequency module according to Embodiment 2. Figure 12 is a plan view of a semiconductor component according to Embodiment 2.

[0010] The embodiments of the present invention will be described in detail below with reference to the drawings. Note that the embodiments described below are all general or specific examples. The numerical values, shapes, materials, components, arrangement of components, and connection configurations shown in the following embodiments are examples only and are not intended to limit the present invention.

[0011] The figures are schematic diagrams that have been appropriately emphasized, omitted, or had their proportions adjusted to illustrate the present invention, and are not necessarily strictly accurate representations. Actual shapes, positional relationships, and proportions may differ. In each figure, substantially identical components are denoted by the same reference numerals, and redundant explanations may be omitted or simplified.

[0012] In the following figures, the x and y axes are mutually orthogonal axes on a plane parallel to the main surface of the module board. The z axis is perpendicular to the main surface of the module board, with its positive direction indicating upwards and its negative direction indicating downwards.

[0013] In the following explanation, "connected" includes not only cases where there is a direct connection via terminals and / or wiring conductors, but also cases where there is an electrical connection via other circuit elements. "C is connected between A and B" means that one end of C is connected to A and the other end of C is connected to B, and that C is arranged in series in the path between A and B. "Path between A and B" means a path consisting of conductors that electrically connect A to B.

[0014] The "passband of a filter" is the portion of the frequency spectrum transmitted by the filter, and is defined as the frequency band between two frequencies that are 3 dB greater than the minimum power insertion loss.

[0015] "Transmitting band" refers to the frequency band used for transmission in a communication device, while "receiving band" refers to the frequency band used for reception in a communication device. For example, in an FDD (Frequency Division Duplex) band, different frequency bands (uplink band and downlink band) are used as the transmitting and receiving bands. In contrast, in a TDD band, the same frequency band is used for both the transmitting and receiving bands.

[0016] The term "harmonic band of a specified frequency band" refers to the frequency band from n times the low-frequency end of the specified frequency band to n times the high-frequency end of the specified frequency band, where n is a natural number greater than or equal to 2. For example, the second harmonic band of a specified frequency band is the frequency band from twice the low-frequency end to twice the high-frequency end of the specified frequency band, and the third harmonic band of a specified frequency band is the frequency band from three times the low-frequency end to three times the high-frequency end of the specified frequency band. If no order is specified, "harmonic band" refers to the harmonic bands of all orders.

[0017] A "band combination capable of simultaneous communication" refers to a combination of multiple frequency bands that can be transmitted, received, or transmitted and received simultaneously, and is predefined by standardization organizations (e.g., 3GPP (registered trademark) (3rd Generation Partnership Project) and IEEE (Institute of Electrical and Electronics Engineers)). Examples of "simultaneous communication" include CA (Carrier Aggregation), EN-DC (E-UTRAN New Radio - Dual Connectivity), NR-DC (New Radio - Dual Connectivity), and NE-DC (New Radio E-UTRAN - Dual Connectivity).

[0018] A "terminal" refers to the point where a conductor within an element terminates. However, if the impedance of the conductors between elements is sufficiently low, a terminal can be interpreted not only as a single point, but as any point on the conductor between elements, or even the entire conductor.

[0019] "A component is placed on a substrate" includes a component being placed on the main surface of the substrate, and a component being placed within the substrate. "A component is placed on the main surface of the substrate" includes a component being placed in contact with the main surface of the substrate, as well as a component being placed above the main surface without contact with it (for example, a component being stacked on top of another component placed in contact with the main surface). Furthermore, "a component is placed on the main surface of the substrate" may also include a component being placed in a recess formed in the main surface. "A component is placed within the substrate" includes a component being encapsulated within the substrate, as well as a component being entirely placed between the two main surfaces of the substrate but with part of the component not covered by the substrate, and a component being placed within the substrate only.

[0020] "A is located between B and C" means that at least one of the line segments connecting any point in B and any point in C passes through A. "A is located closer to C than B" means that the distance between A and C is shorter than the distance between B and C. Here, "the distance between A(B) and C" means the length of the shortest line segment (i.e., the shortest distance) among the line segments connecting any point on the surface of A(B) and any point on the surface of C.

[0021] "Plan view of the module board" means viewing an object by orthogonally projecting it onto the xy-plane in the negative z-axis direction. "In the plan view of the module board, A overlaps with B" means that the region of A projected onto the xy-plane overlaps with the region of B projected onto the xy-plane.

[0022] Furthermore, terms indicating relationships between elements such as "parallel" and "perpendicular," terms indicating the shape of elements such as "rectangle," and numerical ranges do not represent only strict meanings, but also include substantially equivalent ranges, such as errors of a few percent.

[0023] (Embodiment 1) Embodiment 1 will be described below.

[0024] [1.1. Configuration of the Communication Device 5] First, the configuration of the communication device 5 according to this embodiment will be described with reference to Figure 1. Figure 1 is a diagram of the configuration of the communication device 5 according to this embodiment.

[0025] Figure 1 shows an exemplary configuration, and the communication device 5 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the communication device 5 provided below should not be interpreted as restrictive.

[0026] The communication device 5 can be used to provide wireless connectivity. For example, the communication device 5 can be implemented in a UE (User Equipment) on a cellular network (also called a mobile network) such as a mobile phone, smartphone, tablet computer, or wearable device. In another example, by implementing the communication device 5, wireless connectivity can be provided to IoT (Internet of Things) sensor devices, medical / healthcare devices, cars, unmanned aerial vehicles (UAVs) (so-called drones), and automated guided vehicles (AGVs). In yet another example, by implementing the communication device 5, wireless connectivity can also be provided in a wireless access point or wireless hotspot.

[0027] The communication device 5 comprises a high-frequency module 1, antennas 2a and 2b, an RFIC (Radio Frequency Integrated Circuit) 3, and a BBIC (Baseband Integrated Circuit) 4.

[0028] The high-frequency module 1 can transmit high-frequency signals between antennas 2a and 2b and RFIC 3. The circuit configuration of the high-frequency module 1 will be described later with reference to Figure 2.

[0029] Antennas 2a and 2b are connected to the high-frequency module 1. Antennas 2a and 2b can receive high-frequency signals from the high-frequency module 1 and transmit them to the outside of the communication device 5. Furthermore, antennas 2a and 2b can receive high-frequency signals from outside the communication device 5 and supply them to the high-frequency module 1. Note that some or all of antennas 2a and 2b do not need to be included in the communication device 5. In addition, the communication device 5 may have one or more antennas in addition to antennas 2a and 2b.

[0030] RFIC3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, RFIC3 can process the transmission signal input from BBIC4 by upconversion or the like, and output the high-frequency transmission signal generated by this signal processing to the high-frequency module 1. Furthermore, RFIC3 can also process the high-frequency reception signal input via the high-frequency module 1 by downconversion or the like, and output the reception signal generated by this signal processing to BBIC4. RFIC3 may also have a control unit that controls switches and amplifiers, etc., of the high-frequency module 1. Note that some or all of the control unit functions of RFIC3 may be included outside of RFIC3, for example, in BBIC4 or the high-frequency module 1.

[0031] BBIC4 is a baseband signal processing circuit that processes signals using a frequency band lower than the high-frequency signal transmitted by the high-frequency module 1. Examples of signals processed by BBIC4 include image signals for image display and / or voice signals for communication via a speaker. Note that BBIC4 does not necessarily have to be included in the communication device 5.

[0032] [1.2. Circuit Configuration of High-Frequency Module 1] Next, the circuit configuration of the high-frequency module 1 according to this embodiment will be described with reference to Figure 2. Figure 2 is a circuit diagram of the high-frequency module 1 according to this embodiment.

[0033] Figure 2 shows an exemplary circuit configuration, and the high-frequency module 1 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be interpreted as restrictive.

[0034] The high-frequency module 1 includes power amplifiers 11 and 12, low-noise amplifiers 21 and 22, filters 31, 32, 33 and 34, switches 501, 502, 503, 504, 505, 506, 507, 508, 509, 510 and 511, a PA (Power Amplifier) ​​control circuit 60, antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, high-frequency output terminals 121 and 122, and a digital control terminal 130.

[0035] Antenna connection terminals 101 and 102 are examples of a first antenna connection terminal and a second antenna connection terminal, respectively, and are external connection terminals of the high-frequency module 1. Antenna connection terminals 101 and 102 are terminals for supplying high-frequency signals to antennas 2a and 2b, and terminals for receiving high-frequency signals from antennas 2a and 2b. Antenna connection terminal 101 is connected to antenna 2a outside the high-frequency module 1 and to switch 502 inside the high-frequency module 1. Antenna connection terminal 102 is connected to antenna 2b outside the high-frequency module 1 and to switches 503 and 509 inside the high-frequency module 1.

[0036] The high-frequency input terminals 111 and 112 are external connection terminals of the high-frequency module 1 and are terminals for receiving high-frequency signals from the RFIC 3. The high-frequency input terminals 111 and 112 are connected to the RFIC 3 outside the high-frequency module 1 and are connected to the power amplifiers 11 and 12 inside the high-frequency module 1, respectively.

[0037] The high-frequency output terminals 121 and 122 are external connection terminals of the high-frequency module 1 and are terminals for supplying high-frequency signals to the RFIC 3. The high-frequency output terminals 121 and 122 are connected to the RFIC 3 outside the high-frequency module 1 and are connected to the low-noise amplifiers 21 and 22 inside the high-frequency module 1, respectively.

[0038] The digital control terminal 130 is an external connection terminal of the high-frequency module 1 and is a terminal for receiving digital control signals from the RFIC 3. The digital control terminal 130 is connected to the RFIC 3 outside the high-frequency module 1 and to the PA control circuit 60 inside the high-frequency module 1.

[0039] The power amplifier 11 is included in the power amplification circuit 10 and is connected between the high-frequency input terminal 111 and the filter 31. Specifically, the input terminal of the power amplifier 11 is connected to the high-frequency input terminal 111. The output terminal of the power amplifier 11 is connected to the filter 31 via the switch 501. The power amplifier 11 can amplify the transmission signal of band A using power supplied from a power source (not shown).

[0040] The power amplifier 12 is included in the power amplification circuit 10 and is connected between the high-frequency input terminal 112 and the filters 32 and 33. Specifically, the input terminal of the power amplifier 12 is connected to the high-frequency input terminal 112. The output terminal of the power amplifier 12 is connected to the filter 32 via switch 504 and to the filter 33 via switch 508. The power amplifier 12 can amplify the transmission signals of bands B and C using power supplied from a power source (not shown). The power amplifier 12 may be divided into two power amplifiers, for example, one power amplifier for amplifying the transmission signal of band B and the other for amplifying the transmission signal of band C.

[0041] Each of the power amplifiers 11 and 12 may be composed of multiple amplifiers. For example, each of the power amplifiers 11 and 12 may be a multi-stage amplifier including multiple amplifiers connected in series. Alternatively, each of the power amplifiers 11 and 12 may be a differential or balanced power amplifier or Doherty amplifier including multiple amplifiers connected in parallel.

[0042] The low-noise amplifier 21 is included in the low-noise amplification circuit 20 and is connected between the filter 34 and the high-frequency output terminal 121. Specifically, the input end of the low-noise amplifier 21 is connected to the filter 34 via the switch 511. The output end of the low-noise amplifier 21 is connected to the high-frequency output terminal 121. The low-noise amplifier 21 can amplify the received signal in band A using the power supplied from a power source (not shown). Note that the low-noise amplifier 21 may not be included in the high-frequency module 1. In this case, the low-noise amplifier 21 may be connected between the high-frequency module 1 and the RFIC 3 or may be included in the RFIC 3.

[0043] The low-noise amplifier 22 is included in the low-noise amplification circuit 20 and is connected between the filter 32 and the high-frequency output terminal 122. Specifically, the input end of the low-noise amplifier 22 is connected to the filter 32 via the switches 510 and 505. The output end of the low-noise amplifier 22 is connected to the high-frequency output terminal 122. The low-noise amplifier 22 can amplify the received signal in band B using the power supplied from a power source (not shown).

[0044] The filter 31 is an example of a first filter and is a band-pass filter having a passband including the transmission band (A-Tx) of band A. The filter 31 can pass signals within the transmission band of band A and attenuate signals outside the transmission band of band A. One end of the filter 31 is connected to the switch 502. The other end of the filter 31 is connected to the switch 501.

[0045] The filter 32 is an example of a second filter and is a band-pass filter having a passband including the transmission band and the reception band (B-TRx) of band B. The filter 32 can pass signals within the transmission band and the reception band of band B and attenuate signals outside the transmission band and the reception band of band B. One end of the filter 32 is connected to the switch 503. The other end of the filter 32 is connected to the switches 504 and 505.

[0046] Filter 33 is an example of a third filter and is a band-pass filter having a passband including the transmission band (C-Tx) of band C. Filter 33 can pass signals within the transmission band of band C and attenuate signals outside the transmission band of band C. One end of filter 33 is connected to switch 509. The other end of filter 33 is connected to switch 508.

[0047] Filter 34 is a band-pass filter having a passband including the reception band (A-Rx) of band A. Filter 34 can pass signals within the reception band of band A and attenuate signals outside the reception band of band A. One end of filter 34 is connected to switch 502. The other end of filter 34 is connected to switch 511. Note that filter 34 may not be included in high-frequency module 1.

[0048] Note that filters 31 to 34 are not limited to band-pass filters. Some or all of filters 31 to 34 may be band-elimination filters, high-pass filters, low-pass filters, or any combination thereof.

[0049] Switch 501 is an example of a first switch and is a SPST (Single-Pole Single-Throw) type switch included in semiconductor component 41. Switch 501 is connected between power amplifier 11 and filter 31. Specifically, one end of switch 501 is connected to power amplifier 11, and the other end of switch 501 is connected to filter 31. Switch 501 can switch the connection and disconnection between power amplifier 11 and filter 31 based on, for example, a digital control signal supplied from RFIC 3.

[0050] Switch 502 is an example of a second switch and is an SPST type switch included in semiconductor component 42. Switch 502 is connected between the antenna connection terminal 101 and filters 31 and 34. Specifically, one end of switch 502 is connected to the antenna connection terminal 101, and the other end of switch 502 is connected to filters 31 and 34. Switch 502 can switch the connection and disconnection between the antenna connection terminal 101 and filters 31 and 34 based on, for example, a digital control signal supplied from RFIC 3.

[0051] Switch 503 is an example of a third switch and is an SPST type switch included in semiconductor component 42. Switch 503 is connected between the antenna connection terminal 102 and the filter 32. Specifically, one end of switch 503 is connected to the antenna connection terminal 102, and the other end of switch 503 is connected to the filter 32. Switch 503 can switch the connection and disconnection between the antenna connection terminal 102 and the filter 32 based on a digital control signal supplied, for example, from RFIC 3.

[0052] Switch 504 is an example of a fourth switch and is an SPST type switch included in semiconductor component 42. Switch 504 is connected between the power amplifier 12 and the filter 32. Specifically, one end of switch 504 is connected to the power amplifier 12. More specifically, one end of switch 504 is connected to a node (branch point) on the wiring (including terminals) connecting the power amplifier circuit 10 to the semiconductor component 41. The other end of switch 504 is connected to the filter 32. Switch 504 can switch the connection and disconnection between the power amplifier 12 and the filter 32 based on a digital control signal supplied, for example, from RFIC 3. In this embodiment, one end of switch 504 is connected to a node on the wiring connecting the power amplifier circuit 10 to the semiconductor component 41, but is not limited to this. One end of switch 504 may be connected to a node on the wiring within the semiconductor component 41 that connects the component terminal of the semiconductor component 41 to switch 508.

[0053] Switch 505 is an example of a fifth switch and is an SPST type switch included in semiconductor component 42. Switch 505 is connected between the low-noise amplifier 22 and the filter 32. Specifically, one end of switch 505 is connected to the low-noise amplifier 22 via switch 510, and the other end of switch 505 is connected to the filter 32. Switch 505 can switch the connection and disconnection between the low-noise amplifier 22 and the filter 32 based on a digital control signal supplied, for example, from RFIC 3.

[0054] Switch 506 is an example of a sixth switch and is an SPST type switch included in semiconductor component 42. Switch 506 is connected between the path between the low-noise amplifier 22 and switch 504 and ground. Specifically, one end of switch 506 is connected to the path between the low-noise amplifier 22 and switch 504, and the other end of switch 506 is connected to ground. Switch 506 can switch between connecting / not connecting the path between the low-noise amplifier 22 and switch 504 to ground based on a digital control signal supplied, for example, from RFIC 3. Note that switch 506 does not necessarily have to be included in the high-frequency module 1.

[0055] Switch 507 is an example of a seventh switch and is an SPST type switch included in semiconductor component 41. Switch 507 is connected between the path between the power amplifier 12 and switch 508 and ground. Specifically, one end of switch 507 is connected to the path between the power amplifier 12 and switch 508, and the other end of switch 507 is connected to ground. Switch 507 can switch between connecting / not connecting the path between the power amplifier 12 and switch 508 to ground based on a digital control signal supplied, for example, from RFIC 3. Note that switch 507 does not necessarily have to be included in the high-frequency module 1.

[0056] Switch 508 is an example of an eighth switch and is an SPST type switch included in semiconductor component 41. Switch 508 is connected between the power amplifier 12 and the filter 33. Specifically, one end of switch 508 is connected to the power amplifier 12, and the other end of switch 508 is connected to the filter 33. Switch 508 can switch the connection and disconnection between the power amplifier 12 and the filter 33 based on a digital control signal supplied, for example, from RFIC 3. Note that switch 508 does not necessarily have to be included in the high-frequency module 1.

[0057] Switch 509 is an example of a ninth switch and is an SPST type switch included in semiconductor component 42. Switch 509 is connected between the antenna connection terminal 102 and the filter 33. Specifically, one end of switch 509 is connected to the antenna connection terminal 102, and the other end of switch 509 is connected to the filter 33. Switch 509 can switch the connection and disconnection between the antenna connection terminal 102 and the filter 33 based on a digital control signal supplied, for example, from RFIC 3. Note that switch 509 does not necessarily have to be included in the high-frequency module 1.

[0058] Switch 510 is an example of a tenth switch and is an SPST type switch included in the low-noise amplifier circuit 20. Switch 510 is connected between the low-noise amplifier 22 and the filter 32. Specifically, one end of switch 510 is connected to the low-noise amplifier 22, and the other end of switch 510 is connected to the filter 32 via switch 505. Switch 510 can switch the connection and disconnection between the low-noise amplifier 22 and the filter 32 based on a digital control signal supplied, for example, from RFIC 3. Note that switch 510 does not necessarily have to be included in the high-frequency module 1.

[0059] Switch 511 is an SPST type switch included in the low-noise amplification circuit 20. Switch 511 is connected between the low-noise amplifier 21 and the filter 34. Specifically, one end of switch 511 is connected to the low-noise amplifier 21, and the other end of switch 511 is connected to the filter 34. Switch 511 can switch the connection and disconnection between the low-noise amplifier 21 and the filter 34 based on a digital control signal supplied, for example, from the RFIC 3. Note that switch 511 does not necessarily have to be included in the high-frequency module 1.

[0060] The PA control circuit 60 can control the power amplifiers 11 and 12. Specifically, the PA control circuit 60 outputs a control signal to the power amplification circuit 10 for controlling the power amplifiers 11 and 12 based on a digital control signal supplied from, for example, the RFIC 3. This controls, for example, the bias current supplied to the power amplifiers 11 and 12. Note that the PA control circuit 60 does not necessarily have to be included in the high-frequency module 1.

[0061] [1.3. Frequency Bands] The frequency bands A, B, and C supported by the high-frequency module 1 will be described below.

[0062] Bands A, B, and C are frequency bands for communication systems built using Radio Access Technology (RAT). Bands A, B, and C are predefined by standardization bodies (e.g., 3GPP and IEEE). Examples of communication systems include 5GNR (5th Generation New Radio) systems, 4GLTE (4th Generation Long Term Evolution) systems, 2GGSM (2nd Generation Global System for Mobile communications) systems, and WLAN (Wireless Local Area Network) systems.

[0063] Band A is an example of the first band, and is an FDD band, a TDD band, or a SUL (Supplementary Uplink) band. As Band A, Band 8 or Band 26 for LTE, or n8 or n26 for 5GNR can be used. However, Band A is not limited to these bands.

[0064] Band B is an example of a second TDD band and is a TDD band. Bands A and B are a band combination that allows simultaneous communication. Specifically, transmission of signals in Band A and reception of signals in Band B can be performed simultaneously. Also, the harmonic bandwidth of the transmission bandwidth of Band A overlaps at least partially with the reception bandwidth of Band B. As Band B, Band 41 for LTE or n41 for 5GNR can be used. However, Band B is not limited to these bands.

[0065] Band C is an example of a third band, and is an FDD band, TDD band, or SUL band. Band C can be Band 1, Band 3, Band 7 for LTE, or n1, n3, n7 for 5GNR. However, Band C is not limited to these bands.

[0066] [1.4. Communication Mode of High-Frequency Module 1] Next, the communication mode of the high-frequency module 1 according to this embodiment will be described.

[0067] [1.4.1. Predetermined Mode (First State)] First, the first state of the predetermined mode included in the multiple communication modes of the high-frequency module 1 will be explained with reference to Figure 3. Figure 3 is a diagram for explaining the first state of the predetermined mode of the high-frequency module 1 according to this embodiment. In Figure 3, dashed arrows represent signal paths.

[0068] The predetermined mode is a communication mode for simultaneously transmitting signals in Band A and transmitting and receiving signals in Band B in TDD mode. The first state is a state in which signals in Band A and signals in Band B are transmitted.

[0069] In the first state of the predetermined mode, switches 501 to 504 are closed and switches 505 to 511 are opened.

[0070] As a result, the transmission signal for band A is transmitted from RFIC 3 to antenna 2a via the high-frequency input terminal 111, power amplifier 11, switch 501, filter 31, switch 502, and antenna connection terminal 101. Furthermore, the transmission signal for band B is transmitted from RFIC 3 to antenna 2b via the high-frequency input terminal 112, power amplifier 12, switch 504, filter 32, switch 503, and antenna connection terminal 102.

[0071] [1.4.2. Predetermined Mode (Second State)] Next, the second state of the predetermined mode included in the multiple communication modes of the high-frequency module 1 will be described with reference to Figure 4. Figure 4 is a diagram illustrating the second state of the predetermined mode of the high-frequency module 1 according to this embodiment. In Figure 4, dashed arrows represent signal paths.

[0072] The predetermined mode, as described above, is a communication mode for simultaneously transmitting signals in Band A and transmitting and receiving signals in Band B in TDD mode. The second state is a state in which signals in Band A are transmitted and signals in Band B are received.

[0073] In the second state of the predetermined mode, switches 501-503, 505-507, and 510 are closed, and switches 504, 508, 509, and 511 are opened. As a result, the transmission signal for band A is transmitted from RFIC 3 to antenna 2a via the high-frequency input terminal 111, power amplifier 11, switch 501, filter 31, switch 502, and antenna connection terminal 101. Furthermore, the reception signal for band B is transmitted from antenna 2b to RFIC 3 via the antenna connection terminal 102, switch 503, filter 32, switch 505, switch 510, low-noise amplifier 22, and high-frequency output terminal 122.

[0074] The multiple communication modes of the high-frequency module 1 are not limited to the predetermined modes described above. For example, the multiple communication modes of the high-frequency module 1 may include a mode for simultaneously transmitting and receiving signals in band A.

[0075] [1.5. Implementation Examples of High-Frequency Module 1] Next, two implementation examples of the high-frequency module 1 having the circuit configuration described above will be explained with reference to the drawings.

[0076] [1.5.1. Example of double-sided mounting] First, an example of double-sided mounting of the high-frequency module 1 will be described with reference to Figures 5 to 7. Figure 5 is a plan view of the high-frequency module 1 according to this embodiment. Figure 6 is a plan view of the high-frequency module 1 according to this embodiment, and is a view from the positive z-axis side looking through to the main surface 90b side of the module substrate 90. Figure 7 is a cross-sectional view of the high-frequency module 1 according to this embodiment. The cross-section of the high-frequency module 1 in Figure 7 is the cross-section along the line vii-vii in Figures 5 and 6.

[0077] In Figures 5 and 6, the illustration of the resin member covering multiple circuit components and the metal shield covering the resin member are omitted so that the arrangement of each component can be easily understood. Also, in Figures 5 to 7, each component is labeled, but in reality, these labels do not need to be attached to each component.

[0078] Figures 5 to 7 show exemplary configurations, and the high-frequency module 1 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be interpreted as restrictive.

[0079] In addition to the multiple circuit components shown in Figure 2, the high-frequency module 1 includes a module substrate 90, resin members 91 and 92, a metal shield 93, and multiple external connection terminals 94.

[0080] The module substrate 90 has two opposing main surfaces 90a and 90b. The main surfaces 90a and 90b are examples of a first main surface and a second main surface, respectively. Wiring and via electrodes (not shown) are formed inside and / or on the module substrate 90.

[0081] As the module substrate 90, for example, a low-temperature co-fired ceramics (LTCC) substrate or a high-temperature co-fired ceramics (HTCC) substrate having a laminated structure of multiple dielectric layers, a component-embedded substrate, a substrate having a redistribution layer (RDL), or a printed circuit board can be used, but is not limited to these.

[0082] The power amplifier circuit 10 (PA) is a semiconductor component including power amplifiers 11 and 12, and is arranged on the main surface 90a of the module substrate 90. For example, silicon germanium (SiGe) or gallium arsenide (GaAs) can be used as the semiconductor material for the power amplifier circuit 10. In this case, some or all of the power amplifiers 11 and 12 included in the power amplifier circuit 10 can be composed of heterojunction bipolar transistors (HBTs). Alternatively, gallium nitride (GaN) or silicon carbide (SiC) can be used as the semiconductor material for the power amplifier circuit 10. In this case, some or all of the power amplifiers 11 and 12 included in the power amplifier circuit 10 can be composed of HEMTs (High Electron Mobility Transistors) or MESFETs (Metal-Semiconductor Field Effect Transistors). Alternatively, silicon single crystal (Si) can be used as the semiconductor material for the power amplifier circuit 10. In this case, some or all of the power amplifiers 11 and 12 included in the power amplification circuit 10 may be made of CMOS (Complementary Metal Oxide Semiconductor) and may be manufactured by an SOI (Silicon on Insulator) process.

[0083] The power amplification circuit 10 may be divided into multiple semiconductor components. For example, the power amplification circuit 10 may be divided into a semiconductor component including a power amplifier 11 and a semiconductor component including a power amplifier 12.

[0084] The low-noise amplification circuit 20 (LNA) is a semiconductor component including low-noise amplifiers 21 and 22 and switches 510 and 511, and is arranged on the main surface 90b of the module substrate 90. As the semiconductor material for the low-noise amplification circuit 20, for example, silicon single crystal (Si), gallium nitride (GaN), or silicon carbide (SiC) can be used. Some or all of the low-noise amplifiers 21 and 22 included in the low-noise amplification circuit 20 can be made up of field-effect transistors (FETs). Furthermore, some or all of the switches 510 and 511 included in the low-noise amplification circuit 20 can also be made up of FETs.

[0085] The low-noise amplification circuit 20 (LNA) may be divided into multiple semiconductor components. For example, the low-noise amplification circuit 20 may be divided into semiconductor components including low-noise amplifiers 21 and 22 and semiconductor components including switches 510 and 511.

[0086] Filters 31 (A-Tx), 32 (B-TRx), 33 (C-Tx), and 34 (A-Rx) are arranged on the main surface 90a of the module substrate 90. Filters 31 to 34 may be, and are not limited to, surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) filters, LC filters, or dielectric filters, or any combination thereof.

[0087] Furthermore, some or all of the filters 31 to 34 may be in contact with the metal shield 93. This allows some or all of the filters 31 to 34 to release heat through the metal shield 93, thereby suppressing performance degradation due to heat.

[0088] Semiconductor component 41 (BSSW) is an example of a first semiconductor component and includes switches 501, 507, and 508, and is arranged on the main surface 90a of the module substrate 90. Semiconductor component 42 (ASW) is an example of a second semiconductor component and includes switches 502 to 506 and 509 and a digital controller (not shown) that controls the switches 502 to 506 and 509, and is arranged on the main surface 90b of the module substrate 90.

[0089] Each of the semiconductor components 41 and 42 may be divided into multiple semiconductor components. For example, semiconductor component 41 may be divided into a semiconductor component including switch 501 and a semiconductor component including switches 507 and 508. Also, for example, semiconductor component 42 may be divided into a semiconductor component including switch 502 and a semiconductor component including switches 503 and 509.

[0090] For example, silicon single crystal (Si), gallium nitride (GaN), or silicon carbide (SiC) can be used as the semiconductor material for semiconductor components 41 and 42. Some or all of the multiple switches included in semiconductor components 41 and 42 can be made up of FETs.

[0091] The arrangement of semiconductor components 41 and 42 and filters 31 to 33 in a plan view of the module substrate 90 will be described below.

[0092] The semiconductor component 42 is positioned closer to the filter 32 than the semiconductor component 41. Furthermore, the filter 32 is positioned closer to the semiconductor component 42 than the filter 31. Also, the filter 32 is positioned closer to the semiconductor component 42 than the filter 33. Moreover, in a plan view of the module substrate 90, the filter 32 overlaps with the semiconductor component 42 at least partially. By positioning the filter 32 closer to the semiconductor component 42 in this way, the total length of the wiring between filters 31-33 and semiconductor components 41 and 42 can be shortened.

[0093] The PA control circuit 60 (PAC) is arranged on the main surface 90a of the module substrate 90. The PA control circuit 60 may also be included in the semiconductor component 41.

[0094] The resin member 91 covers at least a portion of the components on the main surface 90a of the module substrate 90. The material of the resin member 91 can be, for example, epoxy resin, but is not limited thereto. The resin member 91 has the function of ensuring the reliability of the components on the main surface 90a, such as mechanical strength and moisture resistance. Note that the resin member 91 does not necessarily have to be included in the high-frequency module 1.

[0095] The resin member 92 covers at least a portion of the components on the main surface 90b of the module substrate 90. The material of the resin member 92 can be, for example, epoxy resin, but is not limited thereto. The resin member 92 has the function of ensuring the reliability of the components on the main surface 90b, such as mechanical strength and moisture resistance. Note that the resin member 92 does not necessarily have to be included in the high-frequency module 1.

[0096] The metal shield 93 is a thin metal film formed on the surfaces of the resin members 91 and 92, for example, by sputtering. The metal shield 93 is formed to cover at least a portion (the top and side surfaces) of the surfaces of the resin members 91 and 92. The metal shield 93 is connected to ground and can suppress external noise from entering the electronic components constituting the high-frequency module 1, and from noise generated in the high-frequency module 1 interfering with other modules or other equipment. Note that the metal shield 93 does not necessarily have to be included in the high-frequency module 1.

[0097] The multiple external connection terminals 94 include antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, high-frequency output terminals 121 and 122, a digital control terminal 130, and a ground terminal. The multiple external connection terminals 94 are electrically connected to input / output terminals and / or ground terminals, etc., on a mother board (not shown) located in the negative z-axis direction of the high-frequency module 1, outside the high-frequency module 1. In addition, the multiple external connection terminals 94 are electrically connected to components within the module board 90 inside the high-frequency module 1.

[0098] Here, an example of the mounting of the semiconductor component 42 will be explained with reference to Figure 8. Figure 8 is a plan view of the semiconductor component 42 according to this embodiment.

[0099] Figure 8 shows an exemplary configuration, and the semiconductor component 42 can be mounted using a wide variety of circuit mounting and circuit technologies. Therefore, the description of the semiconductor component 42 provided below should not be interpreted as restrictive.

[0100] The semiconductor component 42 includes switches 503-506 and a digital controller, as well as component terminals 421, 422, 423, 424, 425, 426, 427, and 428. In a plan view of the module substrate 90, the semiconductor component 42 is divided into multiple regions 42a, 42b, 42c, and 42d.

[0101] Region 42a (DCNT) is an example of the first region and is the region where the digital controller is placed. Region 42a is defined as a rectangular region that encloses the digital controller with the minimum area in a plan view of the module board 90. Region 42a is located between regions 42b and 42c in a plan view of the module board 90. Region 42a is also located between regions 42c and 42d in a plan view of the module board 90.

[0102] Region 42b (TDD) is an example of a second region, and is the region where switches 504-506 and component terminals 422-424 are arranged. Region 42b is defined as a rectangular region that encloses switches 504-506 and component terminals 422-424 with the minimum area in a plan view of the module board 90.

[0103] Region 42c (LB) is an example of a third region, and is the region where the switch 502 and component terminals 425 and 426 are arranged. Region 42c is defined as a rectangular region that encloses the switch 502 and component terminals 425 and 426 with the minimum area in a plan view of the module board 90.

[0104] Region 42d (MHB) is the region where switches 503 and 509 and component terminals 421, 427, and 428 are arranged. Region 42d is defined as a rectangular region that encloses switches 503 and 509 and component terminals 421, 427, and 428 with the minimum area in a plan view of the module board 90.

[0105] The component terminal 421 is an example of a first component terminal and is located on the main surface of the semiconductor component 42 facing the main surface 90b of the module substrate 90. As shown in Figure 2, the component terminal 421 is connected to one end of the filter 32 outside the semiconductor component 42 and to the switch 503 inside the semiconductor component 42.

[0106] Component terminal 422 is an example of a second component terminal and is located on the main surface of the semiconductor component 42 facing the main surface 90b of the module substrate 90. As shown in Figure 2, component terminal 422 is connected to the other end of the filter 32 outside the semiconductor component 42 and to switches 504 and 505 inside the semiconductor component 42. As shown in Figure 8, component terminal 422 is located between component terminals 423 and 424 in a plan view of the module substrate 90.

[0107] Component terminal 423 is an example of a third component terminal and is located on the main surface of the semiconductor component 42 facing the main surface 90b of the module board 90. As shown in Figure 2, component terminal 423 is connected to the power amplifier circuit 10 outside the semiconductor component 42 and to switches 504 and 506 inside the semiconductor component 42. In a plan view of the module board 90, component terminal 423 is located further away from component terminal 427 than component terminal 424. In other words, in a plan view of the module board 90, component terminal 424 is located closer to component terminal 427 than component terminal 423.

[0108] The component terminal 424 is an example of a fourth component terminal and is located on the main surface of the semiconductor component 42 facing the main surface 90b of the module board 90. As shown in Figure 2, the component terminal 424 is connected to the low-noise amplification circuit 20 outside the semiconductor component 42 and to the switch 505 inside the semiconductor component 42.

[0109] The component terminal 425 is an example of a fifth component terminal and is located on the main surface of the semiconductor component 42 facing the main surface 90b of the module board 90. As shown in Figure 2, the component terminal 425 is connected to the antenna connection terminal 101 outside the semiconductor component 42 and to the switch 502 inside the semiconductor component 42.

[0110] The component terminal 426 is an example of a sixth component terminal and is located on the main surface of the semiconductor component 42 facing the main surface 90b of the module substrate 90. As shown in Figure 2, the component terminal 426 is connected to filters 31 and 34 outside the semiconductor component 42 and to the switch 502 inside the semiconductor component 42.

[0111] The component terminals 427 are located on the main surface of the semiconductor component 42 facing the main surface 90b of the module board 90. As shown in Figure 2, the component terminals 427 are connected to the antenna connection terminal 102 outside the semiconductor component 42 and to switches 503 and 509 inside the semiconductor component 42.

[0112] The component terminals 428 are located on the main surface of the semiconductor component 42 that faces the main surface 90b of the module substrate 90. As shown in Figure 2, the component terminals 428 are connected to the filter 33 outside the semiconductor component 42 and to the switch 509 inside the semiconductor component 42.

[0113] [1.5.2. Single-Sided Mounting Example] Next, an example of single-sided mounting of the high-frequency module 1 will be described with reference to Figures 9 and 10. Figure 9 is a plan view of the high-frequency module 1 according to this embodiment. Figure 10 is a plan view of the high-frequency module 1 according to this embodiment, and is a view from the positive z-axis side towards the main surface 90b of the module substrate 90.

[0114] In Figure 9, the illustration of the resin member covering multiple circuit components and the metal shield covering the resin member are omitted so that the arrangement of each component can be easily understood. Also, although each component in Figure 9 is labeled, these labels do not necessarily have to be attached to the actual components.

[0115] Figures 9 and 10 represent exemplary configurations, and the high-frequency module 1 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be interpreted as limiting.

[0116] In this implementation example, the low-noise amplifier circuit 20 and the semiconductor component 42 are arranged on the main surface 90a of the module substrate 90. Similar to the double-sided mounting example described above, in a plan view of the module substrate 90, the semiconductor component 42 is positioned closer to the filter 32 than the semiconductor component 41. Also, in a plan view of the module substrate 90, the filter 32 is positioned closer to the semiconductor component 42 than the filter 31. Furthermore, in a plan view of the module substrate 90, the filter 32 is positioned closer to the semiconductor component 42 than the filter 33.

[0117] The layout of the semiconductor component 42 in this implementation example is the same as that of the semiconductor component 42 in the double-sided mounting example, so its illustration and explanation are omitted.

[0118] [1.6. Summary] As described above, the high-frequency module 1 according to this embodiment comprises a module board 90, a power amplification circuit 10 arranged on the module board 90, a low-noise amplification circuit 20 arranged on the module board 90, a filter 31 arranged on the module board 90 and having a passband including the transmission band of band A, a filter 32 arranged on the module board 90 and having a passband including band B (TDD band), and semiconductor components 41 and 42 arranged on the module board 90. The semiconductor component 41 includes a switch 501 connected between the power amplification circuit 10 and the filter 31, and the semiconductor component 42 includes a switch 502 connected between the filter 31 and the antenna connection terminal 101, a switch 503 connected between the filter 32 and the antenna connection terminal 102, a switch 504 connected between the filter 32 and the power amplification circuit 10, and a switch 505 connected between the filter 32 and the low-noise amplification circuit 20.

[0119] According to this, switches 504 and 505, which are used to switch between transmitting and receiving in band B (TDD band), are included in semiconductor component 42. Therefore, compared to the case where switches 504 and 505 are included in semiconductor component 41, leakage of the transmitted signal of band A amplified by the power amplifier 11 to the low-noise amplification circuit 20 via switches 504 and 505 can be reduced, and a decrease in the receiving sensitivity of band B can be suppressed.

[0120] Furthermore, for example, in the high-frequency module 1 according to this embodiment, band B may at least partially overlap with the harmonic band of the transmission band of band A, and bands A and B may be a band combination capable of simultaneous communication.

[0121] According to this, reducing the leakage of the transmitted signal from band A to the low-noise amplification circuit 20 is effective in suppressing the decrease in the receiving sensitivity of band B.

[0122] For example, in the high-frequency module 1 according to this embodiment, in a first state in which the transmission of a signal for band A and the transmission of a signal for band B are performed simultaneously, switches 501, 502, 503, and 504 may be closed and switch 505 may be opened, and in a second state in which the transmission of a signal for band A and the reception of a signal for band B are performed simultaneously, switches 501, 502, 503, and 505 may be closed and switch 504 may be opened.

[0123] According to this, the high-frequency module 1 can simultaneously transmit signals in band A and transmit and receive signals in band B in TDD mode.

[0124] For example, in the high-frequency module 1 according to this embodiment, the semiconductor component 42 may further include a switch 506 connected between the path between the power amplification circuit 10 and the switch 504 and the ground.

[0125] According to this, by closing switch 506 when switch 504 is open, the path between the power amplifier circuit 10 and switch 504 is connected to ground. Therefore, leakage of the transmission signal of band A to the reception path of band B via the path between the power amplifier circuit 10 and switch 504 can be suppressed, and the decrease in the reception sensitivity of band B can be further suppressed.

[0126] For example, in the high-frequency module 1 according to this embodiment, in a first state in which the transmission of a signal for band A and the transmission of a signal for band B are performed simultaneously, switches 501, 502, 503, and 504 may be closed and switches 505 and 506 may be opened. In a second state in which the transmission of a signal for band A and the reception of a signal for band B are performed simultaneously, switches 501, 502, 503, 505, and 506 may be closed and switch 504 may be opened.

[0127] According to this, in the second state where the transmission of the signal in band A and the reception of the signal in band B occur simultaneously, the switch 506 is closed. Therefore, leakage of the transmitted signal of band A into the receiving path of band B via the path between the power amplifier circuit 10 and the switch 504 can be suppressed, and the decrease in the receiving sensitivity of band B can be further suppressed.

[0128] For example, in the high-frequency module 1 according to this embodiment, the semiconductor component 41 may further include a switch 507 connected between the path between the power amplification circuit 10 and the switch 504 and the ground.

[0129] According to this, by closing switch 507 when switch 504 is open, the path between the power amplifier circuit 10 and switch 504 is connected to ground. Therefore, leakage of the band A transmission signal to the band B reception path via the path between the power amplifier circuit 10 and switch 504 can be suppressed, and the decrease in the reception sensitivity of band B can be further suppressed. Furthermore, since it can be connected to ground near switch 508, it is effective in suppressing coupling between switch 501 and switch 508, and is more effective in reducing leakage of the band A transmission signal.

[0130] For example, in the high-frequency module 1 according to this embodiment, in a first state in which the transmission of a signal for band A and the transmission of a signal for band B are performed simultaneously, switches 501, 502, 503, and 504 may be closed and switches 505 and 507 may be opened. In a second state in which the transmission of a signal for band A and the reception of a signal for band B are performed simultaneously, switches 501, 502, 503, 505, and 507 may be closed and switch 504 may be opened.

[0131] According to this, in the second state where the transmission of the signal in band A and the reception of the signal in band B occur simultaneously, the switch 507 is closed. Therefore, leakage of the transmission signal of band A into the reception path of band B via the path between the power amplifier circuit 10 and the switch 504 can be suppressed, and a decrease in the reception sensitivity of band B can be suppressed.

[0132] For example, in the high-frequency module 1 according to this embodiment, the semiconductor component 42 may further include a component terminal 421 connected to one end of the filter 32, a component terminal 422 connected to the other end of the filter 32, a component terminal 423 connected to the power amplification circuit 10, and a component terminal 424 connected to the low-noise amplification circuit 20. Within the semiconductor component 42, the switch 503 may be connected to component terminal 421, one end of the switch 504 and one end of the switch 505 may be connected to component terminal 422, the other end of the switch 504 may be connected to component terminal 423, and the other end of the switch 505 may be connected to component terminal 424.

[0133] According to this, by connecting one end of switch 504 and one end of switch 505 to component terminal 422, an SPDT (Single-Pole Single-Throw) switch can be configured, and the number of component terminals of the semiconductor component 42 can be reduced compared to the case where one end of switch 504 and one end of switch 505 are individually connected to two component terminals.

[0134] For example, in the high-frequency module 1 according to this embodiment, the component terminal 422 may be positioned between component terminals 423 and 424 in a plan view of the module substrate 90.

[0135] According to this, the isolation between the component terminal 423 connected to the power amplifier circuit 10 and the component terminal 424 connected to the low-noise amplifier circuit 20 can be improved, and leakage of the band A transmission signal to the band B reception path via the band B transmission path can be suppressed.

[0136] For example, in the high-frequency module 1 according to this embodiment, the semiconductor component 42 may further include a digital controller configured to control switches 502, 503, 504, and 505, a component terminal 425 connected to the antenna connection terminal 101, and a component terminal 426 connected to the filter 31. In a plan view of the semiconductor component 42, the region 42a where the digital controller is located may be located between the region 42b where switches 504 and 505 and component terminals 422, 423, and 424 are located and the region 42c where switches 502 and component terminals 425 and 426 are located.

[0137] According to this, since region 42a separates region 42b and region 42c from each other, the isolation between switches 504 and 505 and component terminals 422, 423 and 424 located in region 42b and switch 502 and component terminals 425 and 426 located in region 42c can be improved. Therefore, the isolation between the transmission and reception paths of band B and the transmission path of band A can be improved, and the decrease in reception sensitivity of band B can be suppressed.

[0138] Furthermore, for example, in the high-frequency module 1 according to this embodiment, in a plan view of the module substrate 90, semiconductor component 42 may be placed closer to the filter 32 than semiconductor component 41.

[0139] The semiconductor component 42 is connected to both ends of the filter 32 by at least two wires. On the other hand, the semiconductor component 41 is connected to one end of the filter 32 by at least one wire. Therefore, by positioning the semiconductor component 42 closer to the filter 32 than the semiconductor component 41, the total length of the wires between the filter 32 and the semiconductor components 41 and 42 can be shortened.

[0140] Furthermore, for example, in the high-frequency module 1 according to this embodiment, in a plan view of the module substrate 90, the filter 32 may be positioned closer to the semiconductor component 42 than the filter 31.

[0141] Filter 32 is connected to the semiconductor component 42 by at least two wires at both ends. On the other hand, filter 31 is connected to the semiconductor component 42 by at least one wire at one end. Therefore, by positioning filter 32 closer to the semiconductor component 42 than filter 31, the total length of the wiring between filters 31 and 32 and the semiconductor component 42 can be shortened.

[0142] For example, the high-frequency module 1 according to this embodiment may further include a filter 33 having a passband that includes the transmission band of band C, the semiconductor component 41 may further include a switch 508 connected between the power amplification circuit 10 and the filter 33, the semiconductor component 42 may further include a switch 509 connected between the antenna connection terminal 102 and the filter 33, and in a plan view of the module substrate 90, the filter 32 may be positioned closer to the semiconductor component 42 than the filter 33.

[0143] Filter 32 is connected to the semiconductor component 42 by at least two wires at both ends. On the other hand, filter 33 is connected to the semiconductor component 42 by at least one wire at one end. Therefore, by positioning filter 32 closer to the semiconductor component 42 than filter 33, the total length of the wiring between filters 32 and 33 and the semiconductor component 42 can be shortened.

[0144] For example, in the high-frequency module 1 according to this embodiment, the module substrate 90 may have two opposing main surfaces 90a and 90b, the filter 32 may be arranged on the main surface 90a, the semiconductor component 42 may be arranged on the main surface 90b, and in a plan view of the module substrate 90, the filter 32 may at least partially overlap the semiconductor component 42.

[0145] According to this, when the filter 32 and the semiconductor component 42 are arranged on two opposing main surfaces, the distance between the filter 32 and the semiconductor component 42 can be shortened, and the wiring length between the filter 32 and the semiconductor component 42 can be shortened. In particular, since both ends of the filter 32 are connected to the semiconductor component 42 by at least two wires, the effect of shortening the wiring length is significant.

[0146] Furthermore, for example, in the high-frequency module 1 according to this embodiment, the low-noise amplification circuit 20 may include a low-noise amplifier 22 and a switch 510 connected between the switch 505 and the low-noise amplifier 22.

[0147] According to this, since both the low-noise amplifier 22 and the switch 510 are included in the low-noise amplification circuit 20, the number of components can be reduced compared to when the low-noise amplifier 22 and the switch 510 are included in separate components.

[0148] For example, in the high-frequency module 1 according to this embodiment, band A may be Band 8 or Band 26 for LTE, or n8 or n26 for 5GNR, and band B may be Band 41 for LTE, or n41 for 5GNR.

[0149] According to this, the high-frequency module 1 can be used in an LTE system and / or a 5GNR system.

[0150] Furthermore, the communication device 5 according to this embodiment includes an RFIC 3 configured to process high-frequency signals, and a high-frequency module 1 configured to transmit high-frequency signals between the RFIC 3 and antennas 2a and 2b.

[0151] According to this, the communication device 5 can achieve the same effect as the high-frequency module 1.

[0152] (Embodiment 2) Next, Embodiment 2 will be described. In this embodiment, the main difference from Embodiment 1 is that one component terminal connected to one end of switch 504 and one end of switch 505 within the semiconductor component 42 is replaced by two component terminals connected to one end of switch 504 and one end of switch 505, respectively. The following will describe this embodiment, focusing on the differences from Embodiment 1.

[0153] The communication device 5 according to this embodiment is the same as the communication device 5 according to Embodiment 1, except that it is equipped with a high-frequency module 1A instead of the high-frequency module 1. Therefore, the illustration and description of the configuration of the communication device 5 are omitted.

[0154] Furthermore, the circuit configuration of the high-frequency module 1A according to this embodiment is the same as that of the high-frequency module 1 according to Embodiment 1, except that switches 502-506 and 509 are included in semiconductor component 42A instead of semiconductor component 42. Therefore, the following explanation will focus on the mounting examples of semiconductor component 42A, with reference to Figures 11 and 12.

[0155] [2.1. Mounting Example of Semiconductor Component 42A] An example of mounting semiconductor component 42A will be described with reference to Figures 11 and 12. Figure 11 is a circuit diagram of the high-frequency module 1A according to this embodiment. Figure 12 is a plan view of the semiconductor component 42A according to this embodiment.

[0156] Figures 11 and 12 represent exemplary configurations, and the high-frequency module 1A and semiconductor component 42A can be mounted using a wide variety of circuit mounting and circuit technologies. Therefore, the following descriptions of the high-frequency module 1A and semiconductor component 42A should not be interpreted as limiting.

[0157] The semiconductor component 42A includes switches 502-506 and 509, a digital controller (not shown), and component terminals 421, 422a, 422b, 423, 424, 425, 426, 427, and 428. In a plan view of the module substrate 90, the semiconductor component 42A is divided into a plurality of regions 42a, 42b1, 42b2, 42c, and 42d.

[0158] Region 42b1 is the area where switches 504 and 506 and component terminals 422a and 423 are arranged. Region 42b1 is defined as a rectangular area that encloses switches 504 and 506 and component terminals 422a and 423 with the minimum area in a plan view of the module board 90.

[0159] Region 42b2 is the area where the switch 505 and component terminals 422b and 424 are arranged. Region 42b2 is defined as a rectangular area that encloses the switch 505 and component terminals 422b and 424 with the minimum area in a plan view of the module board 90.

[0160] In this embodiment, region 42a is positioned between regions 42b1 and 42c in a plan view of the module substrate 90. Furthermore, region 42a is positioned between regions 42b2 and 42c in a plan view of the module substrate 90.

[0161] The component terminal 422a is an example of a second component terminal and is located on the main surface of the semiconductor component 42A facing the main surface 90b of the module board 90. As shown in Figure 11, the component terminal 422a is connected to the other end of the filter 32 outside the semiconductor component 42A and to the switch 504 inside the semiconductor component 42A.

[0162] The component terminal 422b is an example of a second component terminal and is located on the main surface of the semiconductor component 42A facing the main surface 90b of the module board 90. As shown in Figure 11, the component terminal 422b is connected to the other end of the filter 32 outside the semiconductor component 42A and to the switch 505 inside the semiconductor component 42A.

[0163] In a plan view of the module board 90, component terminal 423 is positioned further away from component terminal 427 than component terminal 424. Furthermore, in a plan view of the module board 90, component terminal 423 is positioned further away from region 42c than component terminal 424.

[0164] [2.2. Summary] As described above, in the high-frequency module 1A according to this embodiment, the semiconductor component 42A may further include a component terminal 421 connected to one end of the filter 32, two component terminals 422a and 422b connected to the other end of the filter 32, a component terminal 423 connected to the power amplification circuit 10, and a component terminal 424 connected to the low-noise amplification circuit 20. Within the semiconductor component 42A, the switch 503 may be connected to component terminal 421, one end of the switch 504 may be connected to one of the two component terminals 422a and 422b, one end of the switch 505 may be connected to the other of the two component terminals 422a and 422b, the other end of the switch 504 may be connected to component terminal 423, and the other end of the switch 505 may be connected to component terminal 424.

[0165] According to this, two SPST switches can be configured by connecting one end of switch 504 and one end of switch 505 to separate component terminals 422a and 422b.

[0166] (Other Embodiments) The high-frequency module and communication device according to the present invention have been described above based on embodiments, but the high-frequency module and communication device according to the present invention are not limited to the above embodiments. Other embodiments realized by combining any of the components in the above embodiments, modified versions obtained by making various modifications to the above embodiments that a person skilled in the art can conceive of without departing from the spirit of the present invention, and various devices incorporating the above high-frequency module are also included in the present invention.

[0167] For example, in the circuit configuration of the high-frequency module according to each of the above embodiments, other circuit elements and wiring may be inserted between the paths connecting each circuit element and signal path disclosed in the drawings. For example, an impedance matching circuit may be connected between the power amplifier 11 and the switch 501, and / or between the power amplifier 12 and the switch 508. Also, for example, an impedance matching circuit may be inserted between the filter 32 and the switch 510, and / or between the filter 34 and the switch 511. Also, for example, a coupler may be connected between the switch 502 and the antenna connection terminal 101, and / or between switches 503 and 509 and the antenna connection terminal 102.

[0168] This invention can be widely used in communication devices such as mobile phones as a high-frequency module positioned in the front end.

[0169] 1, 1A High-frequency module 2a, 2b Antenna 3 RFIC 4 BBIC 5 Communication device 10 Power amplification circuit 11, 12 Power amplifier 20 Low-noise amplification circuit 21, 22 Low-noise amplifier 31, 32, 33, 34 Filter 41, 42, 42A Semiconductor components 42a, 42b, 42b1, 42b2, 42c, 42d Area 60 PA control circuit 90 Module board 90a, 90b Main surface 91, 92 Resin material 93 Metal shield 94 External connection terminals 101, 102 Antenna connection terminals 111, 112 High-frequency input terminals 121, 122 High-frequency output terminals 130 Digital control terminals 421, 422, 422a, 422b, 423, 424, 425, 426, 427, 428 Component terminals 501, 502, 503, 504, 505, 506, 507, 508, 509, 510, 511 Switches

Claims

1. A high-frequency module comprising: a module board; a power amplification circuit disposed on the module board; a low-noise amplification circuit disposed on the module board; a first filter disposed on the module board and having a passband including a first band transmission band; a second filter disposed on the module board and having a passband including a second TDD band; and a first semiconductor component and a second semiconductor component disposed on the module board, wherein the first semiconductor component includes a first switch connected between the power amplification circuit and the first filter; the second semiconductor component includes a second switch connected between the first filter and a first antenna connection terminal; a third switch connected between the second filter and a second antenna connection terminal; a fourth switch connected between the second filter and the power amplification circuit; and a fifth switch connected between the second filter and the low-noise amplification circuit.

2. The high-frequency module according to claim 1, wherein the second TDD band at least partially overlaps with the harmonic band of the transmission bandwidth of the first band, and the first band and the second TDD band are a band combination capable of simultaneous communication.

3. In a first state in which the transmission of a signal in the first band and the transmission of a signal in the second TDD band are performed simultaneously, the first switch, the second switch, the third switch and the fourth switch are closed and the fifth switch is open; and in a second state in which the transmission of a signal in the first band and the reception of a signal in the second TDD band are performed simultaneously, the first switch, the second switch, the third switch and the fifth switch are closed and the fourth switch is open, the high-frequency module according to claim 1 or 2.

4. The high-frequency module according to claim 1 or 2, wherein the second semiconductor component further includes a sixth switch connected between the path between the power amplification circuit and the fourth switch and ground.

5. In a first state in which the transmission of the signal of the first band and the transmission of the signal of the second TDD band are performed simultaneously, the first switch, the second switch, the third switch and the fourth switch are closed and the fifth switch and the sixth switch are open; and in a second state in which the transmission of the signal of the first band and the reception of the signal of the second TDD band are performed simultaneously, the first switch, the second switch, the third switch, the fifth switch and the sixth switch are closed and the fourth switch is open, the high-frequency module according to claim 4.

6. The high-frequency module according to any one of claims 1 to 3, wherein the first semiconductor component further includes a seventh switch connected between a path between the power amplification circuit and the fourth switch and ground.

7. In a first state in which the transmission of the signal of the first band and the transmission of the signal of the second TDD band are performed simultaneously, the first switch, the second switch, the third switch and the fourth switch are closed and the fifth switch and the seventh switch are open; and in a second state in which the transmission of the signal of the first band and the reception of the signal of the second TDD band are performed simultaneously, the first switch, the second switch, the third switch, the fifth switch and the seventh switch are closed and the fourth switch is open, the high-frequency module according to claim 6.

8. The high-frequency module according to any one of claims 1 to 7, wherein the second semiconductor component further includes a first component terminal connected to one end of the second filter, a second component terminal connected to the other end of the second filter, a third component terminal connected to the power amplification circuit, and a fourth component terminal connected to the low-noise amplification circuit, wherein within the second semiconductor component, the third switch is connected to the first component terminal, one end of the fourth switch and one end of the fifth switch are connected to the second component terminal, the other end of the fourth switch is connected to the third component terminal, and the other end of the fifth switch is connected to the fourth component terminal.

9. The high-frequency module according to claim 8, wherein the second component terminal is located between the third component terminal and the fourth component terminal in a plan view of the module substrate.

10. The high-frequency module according to claim 8 or 9, wherein the second semiconductor component further includes a digital controller configured to control the second switch, the third switch, the fourth switch and the fifth switch; a fifth component terminal connected to the first antenna connection terminal; and a sixth component terminal connected to the first filter, wherein, in a plan view of the second semiconductor component, the first region on which the digital controller is located is located between a second region on which the fourth switch, the fifth switch, the second component terminal, the third component terminal and the fourth component terminal are located and a third region on which the second switch, the fifth component terminal and the sixth component terminal are located.

11. The high-frequency module according to any one of claims 1 to 7, wherein the second semiconductor component further includes: a first component terminal connected to one end of the second filter; two second component terminals connected to the other end of the second filter; a third component terminal connected to the power amplification circuit; and a fourth component terminal connected to the low-noise amplification circuit, wherein within the second semiconductor component, the third switch is connected to the first component terminal; one end of the fourth switch is connected to one of the two second component terminals; one end of the fifth switch is connected to the other of the two second component terminals; the other end of the fourth switch is connected to the third component terminal; and the other end of the fifth switch is connected to the fourth component terminal.

12. The high-frequency module according to any one of claims 1 to 11, wherein, in a plan view of the module substrate, the second semiconductor component is positioned closer to the second filter than the first semiconductor component.

13. The high-frequency module according to any one of claims 1 to 12, wherein, in a plan view of the module substrate, the second filter is positioned closer to the second semiconductor component than the first filter.

14. The high-frequency module according to any one of claims 1 to 13, further comprising a third filter having a passband including a transmission band of a third band, the first semiconductor component further comprising an eighth switch connected between the power amplifier circuit and the third filter, the second semiconductor component further comprising a ninth switch connected between the second antenna connection terminal and the third filter, and in a plan view of the module substrate, the second filter is positioned closer to the second semiconductor component than the third filter.

15. The high-frequency module according to any one of claims 1 to 14, wherein the module substrate has a first main surface and a second main surface facing each other, the second filter is disposed on the first main surface, the second semiconductor component is disposed on the second main surface, and in a plan view of the module substrate, the second filter at least partially overlaps with the second semiconductor component.

16. The high-frequency module according to any one of claims 1 to 15, wherein the low-noise amplification circuit includes a low-noise amplifier and a tenth switch connected between the fifth switch and the low-noise amplifier.

17. The high-frequency module according to any one of claims 1 to 16, wherein the first band is Band 8 or Band 26 for LTE (Long Term Evolution), or n8 or n26 for 5GNR (5th Generation New Radio), and the second TDD band is Band 41 for LTE, or n41 for 5GNR.

18. A communication device comprising: a signal processing circuit configured to process a high-frequency signal; and a high-frequency module according to any one of claims 1 to 17 configured to transmit the high-frequency signal between the signal processing circuit and an antenna.

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