Composition, etching method, method for manufacturing semiconductor device, etching device, and cleaning method

A halogen-based etching gas composition, SFxZy, addresses the high GWP issue of SF6 by providing an effective and environmentally friendly alternative for semiconductor manufacturing processes, ensuring efficient etching and cleaning of materials like silicon and metals.

WO2026134059A1PCT designated stage Publication Date: 2026-06-25CENT GLASS CO LTD

Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
CENT GLASS CO LTD
Filing Date
2025-12-10
Publication Date
2026-06-25

AI Technical Summary

Technical Problem

The high global warming potential (GWP) of sulfur hexafluoride (SF6) used in anisotropic dry etching and cleaning processes for semiconductor manufacturing poses environmental concerns, and finding an effective alternative gas is challenging.

Method used

The use of a specific compound, SFxZy, where x and y are integers greater than or equal to 1, and Z is a halogen atom other than fluorine, as an etching and cleaning gas, which reduces the GWP by hydrolyzing more easily than SF6.

Benefits of technology

This alternative gas enables effective etching and cleaning while minimizing environmental impact by reducing GWP, allowing for the efficient removal of materials such as silicon and metal compounds in semiconductor manufacturing.

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Abstract

Provided is a composition enabling removal of a target even when a gas having a low GWP is used, an etching method, a method for manufacturing a semiconductor device, an etching device, and a cleaning method. The present invention pertains to an etching method for etching an etching target by using a plasma gas obtained by converting, into plasma, an etching gas composition containing SFxZy (where x and y are integers of 1 or above, and x + y = 6. Z is a halogen atom other than a fluorine atom, and if a plurality of Z exist, they may be the same or different).
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