Composition, etching method, method for manufacturing semiconductor device, etching device, and cleaning method
A halogen-based etching gas composition, SFxZy, addresses the high GWP issue of SF6 by providing an effective and environmentally friendly alternative for semiconductor manufacturing processes, ensuring efficient etching and cleaning of materials like silicon and metals.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- CENT GLASS CO LTD
- Filing Date
- 2025-12-10
- Publication Date
- 2026-06-25
AI Technical Summary
The high global warming potential (GWP) of sulfur hexafluoride (SF6) used in anisotropic dry etching and cleaning processes for semiconductor manufacturing poses environmental concerns, and finding an effective alternative gas is challenging.
The use of a specific compound, SFxZy, where x and y are integers greater than or equal to 1, and Z is a halogen atom other than fluorine, as an etching and cleaning gas, which reduces the GWP by hydrolyzing more easily than SF6.
This alternative gas enables effective etching and cleaning while minimizing environmental impact by reducing GWP, allowing for the efficient removal of materials such as silicon and metal compounds in semiconductor manufacturing.
Smart Images

Figure JP2025043059_25062026_PF_FP_ABST