Method and system for enhancing growth of chalcogen films
By employing separate introduction of metal and chalcogen precursors with additives in a controlled environment, the method addresses the challenges of grain size and contamination in TMD film fabrication, resulting in high-quality, single-crystalline TMD films for semiconductor applications.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- NEXSTROM PTE LTD
- Filing Date
- 2025-12-18
- Publication Date
- 2026-06-25
AI Technical Summary
Conventional methods for fabricating large-area, high-quality transition metal dichalcogenide (TMD) films face challenges such as reduced grain size, thickness variation, and contamination, which compromise the performance of TMDs in semiconductor applications due to the limitations of chalcogen source selection and vaporization issues.
A method and system using separate introduction of metal and chalcogen precursors with additives in a controlled environment, such as oxidizing and redox additives, to enhance the growth of TMD films, achieving larger grain sizes, reduced defects, and improved crystallinity through precise control of nucleation density and contamination.
The method enables the production of high-quality, single-crystalline TMD films with controlled grain sizes and reduced defects, suitable for advanced semiconductor applications, by mitigating unwanted side effects associated with single chalcogen sources.
Smart Images
Figure SG2025050806_25062026_PF_FP_ABST