Semiconductor material and preparation method therefor and use thereof
By doping the host material with cerium oxide, thulium oxide and aluminum fluoride, and combining it with a specific sintering process, the problem of insufficient stability in IGZO or ITZO thin film transistor devices has been solved, and a semiconductor material with high mobility and excellent optoelectronic properties has been realized, which is suitable for thin film transistor devices.
WO2026137104A1PCT designated stage Publication Date: 2026-07-02BOE TECHNOLOGY GROUP CO LTD +1
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- BOE TECHNOLOGY GROUP CO LTD
- Filing Date
- 2024-12-23
- Publication Date
- 2026-07-02
Smart Images
Figure CN2024141347_02072026_PF_FP_ABST
Abstract
The present application relates to the technical field of display, and discloses a semiconductor material and a preparation method therefor and a use thereof. The semiconductor material comprises a host material and a doping material; the host material comprises indium oxide, and at least one of gallium oxide, zinc oxide, and tin oxide; and the doping material comprises cerium oxide, thulium oxide, and aluminum fluoride, wherein the mass percentage of cerium oxide in the semiconductor material is 0.5 wt% to 5.0 wt%, the mass percentage of thulium oxide in the semiconductor material is 0.5 wt% to 5.0 wt%, and the mass percentage of aluminum fluoride in the semiconductor material is 0.1 wt% to 2 wt%. The semiconductor material can be used for preparing a channel layer of a thin film transistor device, improving the quality and photoelectric performance of a thin film, and improving the stability of the device.
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