Light-emitting device and preparation method therefor, and display panel

Abstract

The embodiments of the present disclosure relate to the technical field of display. Provided are a light-emitting device and a preparation method therefor, and a display panel, which are at least used for improving the stability of a light-emitting device and prolonging the service life thereof. The light-emitting device comprises a light-emitting structure layer and a second functional layer. The light-emitting structure layer comprises an anode, a cathode, and at least one light-emitting unit, wherein the anode and the cathode are arranged opposite each other; the at least one light-emitting unit is located between the anode and the cathode; and each light-emitting unit comprises a light-emitting layer and a first functional layer, the first functional layer being closer to the cathode than the light-emitting layer. The second functional layer is located on one side of the light-emitting structure layer, and the materials of the second functional layer comprise a first metal element and a hydrogen element. The light-emitting device is applied to a display apparatus.

Description

Light-emitting devices and their fabrication methods, display panels Technical Field

[0001] This disclosure relates to the field of display technology, and in particular to a light-emitting device and its preparation method, and a display panel. Background Technology

[0002] Quantum dots (QDs), as novel light-emitting materials, possess advantages such as high light purity, high quantum efficiency, tunable color emission, and long lifespan, making them a research hotspot for new LED (Light Emitting Diode) materials. Therefore, quantum dot light-emitting diodes (QLEDs) using quantum dot light-emitting materials as the emitting layer have found good applications in the display field. Summary of the Invention

[0003] On one hand, a light-emitting device is provided. The light-emitting device includes a light-emitting structural layer and a second functional layer. The light-emitting structural layer includes an anode, a cathode, and at least one light-emitting unit. The anode and cathode are disposed opposite to each other. At least one light-emitting unit is located between the anode and the cathode; each light-emitting unit includes a light-emitting layer and a first functional layer, with the first functional layer closer to the cathode than the light-emitting layer. The second functional layer is located on one side of the light-emitting structural layer. The material of the second functional layer includes a first metallic element and hydrogen.

[0004] In some embodiments, in the second functional layer, the first metal element is connected to the hydrogen element by chemical bonds.

[0005] In some embodiments, the first metal element includes at least one of Group IIA metal elements, lanthanide metal elements, and Group IVB metal elements; and / or, the first metal element includes Group IIIA metal elements and Group VIII metal elements.

[0006] In some embodiments, the first metallic element includes a Group IIIA metallic element and a Group VIII metallic element, wherein the mass ratio of the Group IIIA metallic element to the Group VIII metallic element ranges from 3:100 to 20:100.

[0007] In some embodiments, the second functional layer is reused as the layer closer to the second functional layer between the anode and the cathode.

[0008] In some embodiments, the material of the layer closer to the second functional layer in both the anode and cathode comprises a second metallic element. At least a portion of the elements in the first metallic element are of the same element type as the second metallic element.

[0009] In some embodiments, the second functional layer includes at least two functional sub-sections arranged along a first direction, wherein the anode and cathode are disposed opposite to each other. In any two adjacent functional sub-sections, the concentration of hydrogen in the functional sub-section closer to the first functional layer is less than the concentration of hydrogen in the functional sub-section farther from the first functional layer.

[0010] In some embodiments, the second functional layer includes at least two functional sublayers arranged along a first direction, wherein the anode and cathode are disposed opposite to each other. The at least two functional sublayers include a first functional sublayer and a second functional sublayer, wherein the first functional sublayer is closer to the first functional layer than the second functional sublayer. The first metal element included in the first functional sublayer is different from the first metal element included in the second functional sublayer. Specifically, the bonding strength between the first metal element included in the first functional sublayer and hydrogen is greater than the bonding strength between the first metal element included in the second functional sublayer and hydrogen.

[0011] In some embodiments, under the first preset conditions, the mass percentage of hydrogen in the material of the second functional layer ranges from 5% to 10%.

[0012] In some embodiments, under the second preset conditions, the volume percentage of hydrogen in the material of the second functional layer ranges from 10. 18 cm -3 ~10 28 cm -3 .

[0013] In some embodiments, the thickness of the second functional layer ranges from 15 nm to 100 nm.

[0014] In some embodiments, the light-emitting device further includes a third functional layer. The third functional layer is located on the side of the second functional layer away from the first functional layer. The material of the third functional layer includes a matrix material and hydrogen; the matrix material includes non-metallic elements.

[0015] In some embodiments, the matrix material includes at least one of silicon nitride, silicon oxynitride, and silicon oxide; and / or, the matrix material includes a porous material; the porous material includes at least one of metal-organic framework materials, nanoporous materials, and organic molecular cages; and / or, the matrix material includes an insulating polymer material.

[0016] In some embodiments, the porosity of the porous material is greater than or equal to 0.01%.

[0017] In some embodiments, the surface of the porous material has active sites, and the area density of the active sites ranges from 1 × 10⁻⁶. 11 cm -2 ~5×10 12 cm -2 .

[0018] In some embodiments, the thickness of the third functional layer ranges from 60 nm to 1000 nm.

[0019] In some embodiments, the light-emitting unit further includes a fourth functional layer located between the anode and the light-emitting layer. The fourth functional layer is used at least for transporting holes; the material of the fourth functional layer includes an organic material. The cathode is closer to the second functional layer than the anode, and the thickness of the third functional layer ranges from 200 nm to 1000 nm; or, the anode is closer to the second functional layer than the cathode, and the thickness of the third functional layer ranges from 60 nm to 200 nm.

[0020] In some embodiments, the material of the first functional layer includes a metal oxide material; the thickness of the first functional layer ranges from 20 nm to 40 nm.

[0021] In some embodiments, the thickness of the layer closer to the second functional layer in the anode and cathode ranges from 20 nm to 100 nm.

[0022] In some embodiments, at least one light-emitting unit includes at least two light-emitting units arranged along a first direction, wherein the first direction is the direction in which the anode and cathode are disposed opposite to each other. The light-emitting structure layer further includes a charge-generating layer. The charge-generating layer is located between any two adjacent light-emitting units.

[0023] On the other hand, a display panel is provided. The display panel includes: an encapsulation layer and a plurality of light-emitting devices arranged along a second direction, which intersects the direction in which the anode and cathode are disposed opposite to each other. The light-emitting devices are as described in any of the above embodiments. The encapsulation layer covers the plurality of light-emitting devices.

[0024] In some embodiments, the material of the encapsulation layer includes a neutral encapsulating adhesive.

[0025] In some embodiments, the second functional layers of multiple light-emitting devices are connected; and / or, the light-emitting devices include a third functional layer located on the side of the second functional layer away from the first functional layer, the material of the third functional layer including a matrix material and hydrogen element, the matrix material including non-metallic elements; the third functional layers of multiple light-emitting devices are connected.

[0026] In another aspect, a method for fabricating a light-emitting device is provided. The method includes: forming a light-emitting structural layer; forming a second functional layer. The light-emitting structural layer includes an anode, a cathode, and at least one light-emitting unit. The anode and cathode are disposed opposite to each other. At least one light-emitting unit is located between the anode and cathode; each light-emitting unit includes a light-emitting layer and a first functional layer, with the first functional layer closer to the cathode than the light-emitting layer. The second functional layer is located on one side of the light-emitting structural layer; the material of the second functional layer includes a first metal element and hydrogen.

[0027] In some embodiments, forming a second functional layer includes: depositing material on one side of the light-emitting structure layer in a hydrogen-containing gas atmosphere using a vapor deposition process, a deposition process, or a plasma treatment process to form a second functional layer. Attached Figure Description

[0028] To more clearly illustrate the technical solutions in this disclosure, the accompanying drawings used in some embodiments of this disclosure will be briefly described below. Obviously, the drawings described below are only drawings of some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams and are not intended to limit the actual size of the product, the actual process of the method, etc. involved in the embodiments of this disclosure.

[0029] Figure 1 is a structural diagram of a display panel according to some embodiments of the present disclosure;

[0030] Figure 2 is a structural diagram of a display panel according to some embodiments of the present disclosure;

[0031] Figure 3 is a structural diagram of a display panel according to some embodiments of the present disclosure;

[0032] Figure 4 is a structural diagram of a light-emitting device according to some embodiments of the present disclosure;

[0033] Figure 5 is a structural diagram of a display panel according to some embodiments of the present disclosure;

[0034] Figure 6 is a structural diagram of a display panel according to some embodiments of the present disclosure;

[0035] Figure 7 is a structural diagram of a display panel according to some embodiments of the present disclosure;

[0036] Figure 8 is a structural diagram of a display panel according to some embodiments of the present disclosure;

[0037] Figure 9 is a structural diagram of a display panel according to some embodiments of the present disclosure;

[0038] Figure 10 is a structural diagram of a display panel according to some embodiments of the present disclosure;

[0039] Figure 11 is a structural diagram of a display panel according to some embodiments of the present disclosure;

[0040] Figure 12 is a structural diagram of a display panel according to some embodiments of the present disclosure;

[0041] Figure 13 is a flowchart illustrating the fabrication process of a light-emitting device according to some embodiments of the present disclosure;

[0042] Figure 14 is a step diagram of a method for fabricating a light-emitting device according to some embodiments of the present disclosure;

[0043] Figure 15 is a step diagram of a method for fabricating a light-emitting device according to some embodiments of the present disclosure;

[0044] Figure 16 is a structural diagram of a light-emitting device according to some embodiments of the present disclosure;

[0045] Figure 17 is a graph showing the change of current over time in a light-emitting device according to some embodiments of the present disclosure;

[0046] Figure 18 is a graph showing the change in brightness of a light-emitting device over time according to some embodiments of the present disclosure;

[0047] Figure 19 is a light-emitting topography diagram of a light-emitting panel according to some embodiments of the present disclosure;

[0048] Figure 20 is a structural diagram of a light-emitting device according to some embodiments of the present disclosure;

[0049] Figure 21 is a light-emitting morphology diagram of a light-emitting panel according to some embodiments of the present disclosure;

[0050] Figure 22 is a structural diagram of a light-emitting device according to some embodiments of the present disclosure. Detailed Implementation

[0051] The technical solutions in some embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments provided in this disclosure are within the scope of protection of this disclosure.

[0052] Unless the context otherwise requires, throughout the specification and claims, the term "comprise" and its other forms, such as the third-person singular "comprises" and the present participle "comprising," are interpreted as open-ended and encompassing, meaning "including, but not limited to." In the description of the specification, terms such as "one embodiment," "some embodiments," "exemplary embodiments," "example," "specific example," or "some examples," etc., are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this disclosure. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics mentioned may be included in any suitable manner in any one or more embodiments or examples.

[0053] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of embodiments of this disclosure, unless otherwise stated, "a plurality of" means two or more.

[0054] In describing some embodiments, the terms "coupled" and "connected," and their derivative expressions, may be used. The term "connected" should be interpreted broadly; for example, a "connection" can be a fixed connection, a detachable connection, or an integral part; it can be a direct connection or an indirect connection via an intermediate medium. The term "coupled," for example, indicates that two or more components have direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that do not have direct contact with each other but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the content of this document.

[0055] "At least one of A, B and C" has the same meaning as "at least one of A, B or C", both including the following combinations of A, B and C: only A, only B, only C, combinations of A and B, combinations of A and C, combinations of B and C, and combinations of A, B and C.

[0056] "A and / or B" includes the following three combinations: A only, B only, and a combination of A and B.

[0057] The use of “applies to” or “configured to” in this article implies an open and inclusive language that does not preclude applicability to or configuration to devices that perform additional tasks or steps.

[0058] As used herein, “about,” “approximately,” or “approximately” includes the stated value and the average value within an acceptable range of deviation from the given value, wherein the acceptable range of deviation is determined by a person skilled in the art taking into account the measurement under discussion and the error associated with the measurement of the given quantity (i.e., the limitations of the measurement system).

[0059] As used herein, “parallel,” “perpendicular,” and “equal” include the described situation and situations that are similar to the described situation, within an acceptable range of deviation, which is determined by those skilled in the art taking into account the measurement under discussion and the error associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, “parallel” includes absolute parallelism and approximate parallelism, where an acceptable range of deviation for approximate parallelism may be, for example, within 5°; “perpendicular” includes absolute perpendicularity and approximate perpendicularity, where an acceptable range of deviation for approximate perpendicularity may also be, for example, within 5°; “equal” includes absolute equality and approximate equality, where an acceptable range of deviation for approximate equality may be, for example, a difference between the two equals being less than or equal to 5% of either one.

[0060] It should be understood that when a layer or element is referred to as being on another layer or substrate, it can mean that the layer or element is directly on the other layer or substrate, or that there is an intermediate layer between the layer or element and the other layer or substrate.

[0061] This document describes exemplary embodiments with reference to cross-sectional views and / or plan views, which are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are enlarged for clarity. Therefore, variations in shape relative to the drawings are contemplated due to, for example, manufacturing techniques and / or tolerances. Thus, exemplary embodiments should not be construed as being limited to the shapes of the regions shown herein, but rather include shape deviations due to, for example, manufacturing processes. For example, etched areas shown as rectangular would typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shapes of the areas of the device, nor are they intended to limit the scope of the exemplary embodiments.

[0062] It should be noted that, for example, 11-1 in the accompanying drawings of this disclosure indicates that component 11 belongs to component 1; for example, 321-320 in Figure 2 indicates that pixel defining layer 321 belongs to light-emitting functional layer 320; other similar reference numerals in the drawings also follow the above description. For example, 1 / 2 in the accompanying drawings of this disclosure indicates that structure 1 and structure 2 can both refer to this structure; for example, 201 / 200 in Figure 2 indicates that the first light-emitting device 201 and the light-emitting device 200 can both be represented by this structure. Other similar reference numerals in the accompanying drawings also follow the above description.

[0063] It should be noted that the thickness of a layer or structure mentioned in this disclosure refers to the dimension of that layer or structure along the first direction X, where the anode 110 and cathode 120 are arranged opposite each other (see Figure 2). For example, the thickness of the second functional layer 210 refers to the dimension of the second functional layer 210 along the first direction X. Other similar descriptions appearing in this disclosure also follow the above description.

[0064] As shown in FIG1, some embodiments of the present disclosure provide a display panel 300, which includes a light-emitting device 200.

[0065] The aforementioned display panel 300 can, for example, be a quantum dot light-emitting diode (QLED) display panel, in which case the light-emitting device 200 is a QLED light-emitting device. Based on the quantum confinement effect, quantum dots (QDs) can serve as the light-emitting material for novel light-emitting diodes (LEDs), possessing advantages such as high color purity, high luminous quantum efficiency, tunable color emission, and long lifespan. Therefore, QLEDs using quantum dots as the light-emitting material have increasingly promising application prospects in the display field, and QLED light-emitting devices have received widespread attention.

[0066] The aforementioned display panel 300 can be applied to a display device. The display device can be any display device that displays either moving (e.g., video) or fixed (e.g., still images), and whether it displays text or images. More specifically, the display panel of the described embodiment is contemplated for implementation in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, personal data assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 video players, camcorders, game consoles, watches, clocks, calculators, television monitors, flat panel displays, computer monitors, automotive displays (e.g., odometer displays, etc.), navigators, cockpit controllers and / or displays, displays of camera views (e.g., displays of rearview cameras in vehicles), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging and aesthetic structures (e.g., displays of images of a piece of jewelry), etc.

[0067] In some embodiments, as shown in FIG1, the display panel 300 includes a substrate 310 and a light-emitting functional layer 320 disposed on one side of the substrate 310, the light-emitting functional layer 320 including a plurality of light-emitting devices 200.

[0068] For example, the material of the substrate 310 can be a rigid material, such as glass, to realize a rigid substrate display; or the material of the substrate 310 can also be a flexible material, such as polyimide (PI) or polyethylene terephthalate (PET), to realize a flexible substrate display.

[0069] For example, a plurality of light-emitting devices 200 may be arranged along a second direction Y, which is, for example, a direction parallel to the plane where the substrate 310 is located.

[0070] In some embodiments, as shown in Figures 2 and 3, the multiple light-emitting devices 200 of the display panel 300 include at least one first light-emitting device 201, at least one second light-emitting device 202, and at least one third light-emitting device 203. Under the action of a driving voltage, the first light-emitting device 201 is configured to emit a first color light (e.g., blue light), the second light-emitting device 202 is configured to emit a second color light (e.g., green light), and the third light-emitting device 203 is configured to emit a third color light (e.g., red light). Thus, the brightness (grayscale) of the first light-emitting device 201, the second light-emitting device 202, and the third light-emitting device 203 can be adjusted respectively. Through color combination and superposition, multiple colors can be displayed, thereby achieving full-color display of the display panel 300.

[0071] In some embodiments, as shown in FIG1 and FIG2, the light-emitting functional layer 320 in the display panel 300 further includes a pixel defining layer 321, the pixel defining layer 321 having a plurality of openings Q, and a plurality of light-emitting devices 200 being configured one-to-one with the plurality of openings Q.

[0072] In some examples, as shown in FIG1, the display panel 300 further includes a driving circuit layer 330 disposed between the substrate 310 and the light-emitting functional layer 320, the driving circuit layer 330 including a plurality of pixel driving circuits 331.

[0073] For example, the pixel driving circuit 331 can generate a driving current. Each light-emitting device 200 can emit light under the driving action of the driving current generated by the corresponding pixel driving circuit 331. The light emitted by multiple light-emitting devices 200 cooperates with each other, thereby enabling the display panel 300 to perform the display function.

[0074] In some examples, the driving circuit layer 330 includes multiple pixel driving circuits 331 (e.g., multiple pixel driving circuits 331 arranged in an array), and each pixel driving circuit 331 includes multiple transistor TFTs. The pixel driving circuits 331 are electrically connected to the light-emitting device 200 and are used to drive the light-emitting device 200 to emit light. In this case, the pixel driving circuits 331 employ TFT technology, and the display panel 300 can be referred to as an active-drive display panel (e.g., an active-drive QLED display panel, an AMQLED display panel).

[0075] In some embodiments, as shown in FIG1, the display panel 300 further includes an encapsulation layer 340, which covers the plurality of light-emitting devices 200.

[0076] For example, the driving circuit layer 330, the light-emitting functional layer 320 and the encapsulation layer 340 may be sequentially stacked on the substrate 310 in a direction away from the substrate 310.

[0077] For example, the display panel 300 can be a QLED display panel 300. In this case, the encapsulation layer 340 covers the multiple light-emitting devices 200, which can prevent moisture and oxygen from the external environment from entering the display panel 300 and damaging the materials in the light-emitting devices 200, thus shortening the lifespan of the QLED display panel 300.

[0078] In some embodiments, the material of the encapsulation layer 340 includes an organic encapsulating adhesive.

[0079] Organic encapsulants have the characteristic of being able to level during the manufacturing process, which can achieve the planarization of the surface of the display panel 300. Moreover, organic encapsulants can encapsulate defects and particles that may occur during the process, thereby improving the encapsulation effect of the encapsulation layer 340.

[0080] In some examples, the encapsulation layer 340 employs thin-film encapsulation (TFE) technology. In this case, the encapsulation layer 340 can be a composite layer. For example, the encapsulation layer 340 may include a first sub-layer and a second sub-layer arranged sequentially in a direction away from the light-emitting device 200. The material of the first sub-layer includes the aforementioned organic encapsulant; the material of the second sub-layer includes an inorganic material. The inorganic material is, for example, silicon nitride.

[0081] For example, when the encapsulation layer 340 employs TFE technology, the encapsulation layer 340 may further include a third sublayer located between the first sublayer and the light-emitting device 200, the material of the third sublayer including an inorganic material. The inorganic material is, for example, silicon nitride.

[0082] When the encapsulation layer 340 also includes a second sublayer and / or a third sublayer, the second and / or third sublayers can form a passivation layer, and the organic encapsulant (i.e., the first sublayer) can relieve the stress of the passivation layer. Furthermore, when the encapsulation layer 340 includes a second sublayer, the inorganic material can form a protective layer on the outside of the organic encapsulant, and can also improve the water and oxygen barrier properties of the encapsulation layer 340.

[0083] In some other examples, the display panel 300 also includes a frame adhesive (also referred to as Dam) surrounding the light-emitting device 200. In this case, the organic encapsulant of the encapsulation layer 340 can be filled inside the frame adhesive so that the organic encapsulant can cover multiple light-emitting devices 200.

[0084] For example, the material of the frame adhesive includes at least one of epoxy resin and UV-curable adhesive.

[0085] In some examples, the display panel 300 also includes a drying sheet (not shown) located on the side of the encapsulation layer 340 and / or the frame adhesive away from the substrate 310. The drying sheet can function to block water and oxygen, preventing the materials of the encapsulation layer 340 and / or the frame adhesive from being degraded by the water and oxygen environment.

[0086] In some examples, the display panel 300 also includes a cover plate disposed on the side of the encapsulation layer 340 away from the light-emitting device 200. The cover plate provides support and protection for the display panel 300 and allows the display panel 300 to maintain good performance even when subjected to impacts or scratches.

[0087] For example, the cover plate may include one or any combination of glass cover plates, ceramic cover plates, plastic cover plates, and optical composite material cover plates.

[0088] For example, if the display panel 300 also includes a drying sheet, the drying sheet may be attached to the surface of the cover plate near the substrate 310.

[0089] In some embodiments, as shown in Figures 1 to 3, the light-emitting device 200 includes a light-emitting structure layer 100. The light-emitting structure layer 100 includes an anode 110 and a cathode 120 disposed opposite to each other, and at least one light-emitting unit 100U located between the anode 110 and the cathode 120. Each light-emitting unit 100U includes a light-emitting layer 130.

[0090] Based on the above structure, when the light-emitting device 200 is working, voltages are applied to the anode 110 and the cathode 120 respectively, so that an electric field is generated between them. This can drive the holes in the anode 110 and the electrons in the cathode 120 to recombine in the light-emitting layer 130, generating excitons (i.e., electron-hole pairs). The excitons return to the ground state through radiative transition and emit photons, thereby emitting light.

[0091] For example, the anode 110 and the cathode 120 may be arranged opposite each other along a first direction X, which intersects (e.g., is perpendicular to) a second direction Y.

[0092] In some examples, as shown in Figure 2, the anode 110 can be located on the side of the light-emitting layer 130 closer to the substrate 310, and the cathode 120 can be located on the side of the light-emitting layer 130 away from the substrate 310. In this case, the light-emitting device 200 can be referred to as a positive light-emitting device.

[0093] In other examples, as shown in Figure 3, the cathode 120 may be located on the side of the light-emitting layer 130 closer to the substrate 310, and the anode 110 may be located on the side of the light-emitting layer 130 away from the substrate 310. In this case, the light-emitting device 200 may be referred to as an inverted light-emitting device.

[0094] In some examples, the light emitted by the light-emitting layer 130 is directed toward the substrate 310; in this case, the light-emitting device 200 can be referred to as a bottom-emitting light-emitting device. In still other examples, the light emitted by the light-emitting layer 130 is directed away from the substrate 310; in this case, the light-emitting device 200 can be referred to as a top-emitting light-emitting device.

[0095] For example, the materials of the anode 110 and the cathode 120 may be the same or different, and can be independently selected from at least one of conductive metal oxide materials (e.g., transparent conductive metal oxide materials), conductive glass, conductive polymers (e.g., transparent conductive polymers), and metallic materials (e.g., opaque metallic materials). The conductive metal oxide materials are, for example, indium tin oxide (ITO), fluorine-doped tin oxide (FTO), or indium zinc oxide (IZO), and the metallic materials are, for example, aluminum (Al), silver (Ag), or magnesium-silver alloy (Mg / Ag). The conductive polymers are, for example, polyaniline (PANI), polycarbazole (PZ), polythiophene (PTh), or polypropylene (PPy).

[0096] In some embodiments, as shown in Figures 2 and 3, when the plurality of light-emitting devices 200 include a first light-emitting device 201, a second light-emitting device 202 and a third light-emitting device 203, the anode 110 and the cathode 120 that are farther from the substrate 310 can be a structure that is connected in one layer, that is, the anode 110 and the cathode 120 that are farther from the substrate 310 can be a common electrode shared by the plurality of light-emitting devices 200.

[0097] For example, as shown in Figures 2 and 3, when the anode 110 and cathode 120 that are farther from the substrate 310 can be a common electrode shared by multiple light-emitting devices 200, the anode 110 and cathode 120 that are farther from the substrate 310 are also formed on the side of the pixel defining layer 321 that is farther from the substrate 310.

[0098] In some examples, as shown in Figures 1 to 3, the light-emitting structure layer 100 includes a single light-emitting unit 100U. In this case, the light-emitting device 200 is a single-layer light-emitting device, with the anode 110, the light-emitting unit 100U, and the cathode 120 stacked along the first direction X. In other examples, as shown in Figure 4, the light-emitting structure layer 100 includes multiple (e.g., two) stacked light-emitting units 100U. In this case, the light-emitting device 200 is a multilayer light-emitting device, with the anode 110, the multiple light-emitting units 100U, and the cathode 120 stacked along the first direction X.

[0099] In some embodiments, as shown in FIG4, at least one light-emitting unit 100U includes at least two light-emitting units 100U arranged along a first direction X, wherein the first direction X is the direction in which the anode 110 and the cathode 120 are disposed opposite to each other. The light-emitting structure layer 100 further includes a charge-generating layer 160. The charge-generating layer 160 is located between any two adjacent light-emitting units 100U.

[0100] For example, the material of the charge generation layer 160 includes indium zinc oxide (IZO). Of course, the charge generation layer 160 may also include other materials, and there is no limitation herein.

[0101] For example, the thickness of the charge generation layer 160 can be in the range of 1 nm to 5 nm, such as 1 nm, 1.5 nm, 2 nm, 2.5 nm, 3 nm, 3.5 nm, 4 nm, 4.5 nm or 5 nm.

[0102] Through the aforementioned charge generation layer 160, multiple light-emitting units 100U can be sequentially connected in the first direction X. Furthermore, the charge generation layer 160 in the stacked light-emitting device 200 not only serves to connect the light-emitting units 100U, but also helps to improve the generation efficiency of charges (holes or electrons), thus significantly affecting the performance of the light-emitting device 200. In addition, when the charge generation layer 160 has high transmittance in the visible light range, the luminous efficiency of the light-emitting device 200 can be improved.

[0103] In some examples, the light-emitting layer 130 is a quantum dot light-emitting layer.

[0104] For example, the thickness of the light-emitting layer 130 can be in the range of 15nm to 40nm; for example, 15nm, 25nm, 30nm, 35nm or 40nm.

[0105] It should be understood that, as shown in Figures 2 and 3, when the display panel 300 has multiple light-emitting devices 200 including at least one first light-emitting device 201, at least one second light-emitting device 202, and at least one third light-emitting device 203, the materials of the light-emitting layer 131 of the first light-emitting device 201, the light-emitting layer 132 of the second light-emitting device 202, and the light-emitting layer 133 of the third light-emitting device 203 are different, in order to achieve the purpose of emitting different colors of light. For example, the material of the light-emitting layer 131 of the first light-emitting device 201 includes blue quantum dot material, the material of the light-emitting layer 132 of the second light-emitting device 202 includes green quantum dot material, and the material of the light-emitting layer 133 of the third light-emitting device 203 includes red quantum dot material.

[0106] For example, the materials forming the quantum dot luminescent layer include a quantum dot luminescent material and a photosensitive material; wherein the quantum dot luminescent material includes a quantum dot matrix and a ligand material coordinated to the quantum dot matrix. The photosensitive material is configured to undergo a cross-linking reaction with the ligand material under light radiation conditions to generate a cross-linked quantum dot luminescent material. With the above configuration, a quantum dot luminescent layer can be formed by photolithography. Specifically, by utilizing photochemical reactions such as the decomposition or cross-linking of photosensitive groups, the colloidal stability of the quantum dots changes before and after the photochemical reaction, and selective patterning is achieved through development.

[0107] In some examples, the quantum dot body may include any one or more of the following: group II-VI quantum dots, group III-V quantum dots, group IV-VI quantum dots, group IV quantum dots, group I-III-VI quantum dots, group I-II-IV-VI quantum dots, core-shell quantum dots, and ABX3 type perovskite quantum dots, or any combination thereof.

[0108] Among them, group II-VI quantum dots can be selected from one or more of the following: binary compounds such as CdS, CdSe, CdTe, ZnS, ZnO, ZnSe, ZnTe, HgSe, HgTe, and HgS; ternary compounds such as Hg x Cd 1-x Te, Hg x Cd 1-x S, Hg x Cd 1-x Se, Hg x Zn 1-x Te, Cd x Zn 1-x Se、Cd x Zn 1-x One or more of S and ZnTeSe, where 0 < x < 1, but not limited thereto.

[0109] Group III-V quantum dots can be selected from: InP, InAs, InSb, GaAs, GaP, GaN, GaSb, GaNk, InN, AlP, AlN, AlAs, InGaAs, InGaN, or mixtures thereof; but are not limited thereto.

[0110] Group IV-VI quantum dots can be selected from: PbS, PbSe, PbTe, or mixtures thereof; but are not limited to these.

[0111] Core-shell quantum dots refer to quantum dots where one material forms the core and the other forms the shell. For example, a CdS@ZnS quantum dot means that the core is made of CdS and the shell is made of ZnS. Core-shell quantum dots can be selected from: CdS@ZnS, CdSe@CdS, InP@ZnS, CdTe@CdSe, CdSe@ZnTe, CdSe@ZnS, PdS@ZnS, ZnTe@CdSe, ZnSe@CdS, and Cd... 1-x Zn x One or more of S@ZnS, where 0 < x < 1, but not limited thereto.

[0112] In ABX3 type perovskite quantum dots, A can be CH3NH3. + (methylamine), NH2CH=NH2 (formamidinium) and Cs + One or more of them, B can be Pb 2+ and Sn 2+ One or two of them, X can be Cl - ,Br - and I - One or more of the following can be used: ABX3 type perovskite quantum dots can include, but are not limited to, CH3NH3PbBr3, CH3NH3PbCl3, CH3NH3PbI3, CsPbBr3, CsPbCl3 and CsPbI3.

[0113] When multiple quantum dots are combined, the quantum dot body can be one of CsPbCl3 / ZnS, CsPbBr3 / ZnS, CsPbI3 / ZnS, CdS / ZnSeS / ZnS, CdSe / ZnSeS / ZnS, ZnSe / ZnSeS / ZnS, and ZnSeTe / ZnSeS / ZnS.

[0114] In other examples, the quantum dot bulk can be other nanoscale materials, such as nanorods, nanosheets, etc. The composition of other nanoscale materials may include, but is not limited to, at least one of CuInS2, CuInSe2, AgInS2, etc.

[0115] For example, the shape of the quantum dot body can be any geometric shape such as sphere, ellipsoid, polyhedron, rod, cross, ring, etc.

[0116] In some examples, the ligand material may be selected from any one or a combination of organic acids, organic amines, organophosphorus compounds, and organothiols. For example, the ligand material may be oleic acid, oleylamine, or dodecyl mercaptan.

[0117] In some embodiments, as shown in Figures 2-4, to improve luminous efficiency, each light-emitting unit 100U further includes an electron transport unit 140 located on the side of the light-emitting layer 130 near the cathode 120 and in contact with the light-emitting layer 130. The electron transport unit 140 includes, for example, at least one of an electron injection layer (EIL), an electron transport layer (ETL), and a hole blocking layer (EBL). When the electron transport unit 140 includes an electron injection layer, an electron transport layer, and a hole blocking layer, the electron injection layer, electron transport layer, and hole blocking layer are arranged sequentially in a direction away from the cathode 120.

[0118] In some embodiments, as shown in Figures 2-4, to improve luminous efficiency, each light-emitting unit 100U further includes a hole transport unit 150 located on the side of the light-emitting layer 130 near the anode 110 and in contact with the light-emitting layer 130. The hole transport unit 150 includes, for example, at least one of a hole injection layer (HIL) 151, a hole transport layer (HTL) 152, and an electron blocking layer (EBL). When the hole transport unit 150 includes a hole injection layer 151, a hole transport layer 152, and an electron blocking layer, the hole injection layer 151, the hole transport layer 152, and the electron blocking layer are arranged sequentially in a direction away from the anode 110.

[0119] By setting up film layers such as hole transport unit 150 and electron transport unit 140, it is equivalent to setting transition steps between anode 110 and light-emitting layer 130, and between cathode 150 and light-emitting layer 130, which reduces the potential barrier height that carrier transitions need to overcome, resulting in higher luminous efficiency.

[0120] For example, hole transport unit 150 can be configured to transport holes and / or block electrons and excitons generated within light-emitting layer 130. For instance, hole injection layer 151 can be configured to reduce the hole injection barrier and improve hole injection efficiency. Hole transport layer 152 can be configured to transport holes. Electron blocking layer can be configured to transport holes, block electrons, and block excitons generated within light-emitting layer 130.

[0121] For example, the electron transport unit 140 may be configured to transport electrons and / or block holes and excitons generated within the light-emitting layer 130.

[0122] Exemplarily, the material of the hole injection layer 151 may include organic and / or inorganic materials. Organic materials may include, for example, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene (HAT-CN), polyethylene dioxythiophene (PEDOT), or polyethylene dioxythiophene-polystyrene sulfonate (PEDOT:PSS); inorganic materials may include, for example, molybdenum oxide (MoO). x Examples of fluorides include lithium fluoride (LiF), sodium fluoride (NaF), and magnesium fluoride (MgF2). For example, x is 1 or 3.

[0123] For example, the thickness of the hole injection layer 151 can be in the range of 0.5nm to 10nm; for example, 0.5nm, 1.0nm, 2.0nm, 4.0nm, 6.0nm or 10nm.

[0124] Exemplarily, the material of the hole transport layer 152 includes organic and / or inorganic materials. Organic materials are, for example, poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl)diphenylamine)](TFB), poly(9,9-n-dioctyl-2,7-fluorene-alt-9-isooctyl-3,6-carbazole)(PF8Cz), N,N′-diphenyl-N,N′-(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (NPB), 4,4′, 4”-Tris(carbazole-9-yl)triphenylamine (TCTA), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), poly(4-butyltriphenylamine) (Poly-TPD), 4,4'-di(9-carbazole)biphenyl (CBP), poly(p-phenylacetylene) (PPV), or poly(N-vinylcarbazole) (PVK), etc.; inorganic materials such as nickel oxide (NiO) y ), Vanadium oxide (VO) z Or cuprous thiocyanate (CuSCN), etc. Where y is, for example, 1, and z is, for example, 3.

[0125] For example, the thickness of the hole transport layer 152 can be in the range of 15nm to 50nm; for example, 15nm, 25nm, 30nm, 35nm, 40nm or 50nm.

[0126] For example, as shown in Figures 2 and 3, when the light-emitting device 200 is a single-layer light-emitting device, the light-emitting device 200 includes an anode 110, a hole injection layer 151, a hole transport layer 152, a light-emitting layer 130, an electron transport unit 140, and a cathode 120 stacked together.

[0127] For example, as shown in FIG4, when the light-emitting device 200 is a stacked light-emitting device (e.g., containing two light-emitting units 100U), the light-emitting device 200 includes an anode 110, a hole injection layer 151, a hole transport layer 152, a light-emitting layer 130, an electron transport unit 140, a charge generation layer 160, a hole injection layer 151, a hole transport layer 152, a light-emitting layer 130, an electron transport unit 140, and a cathode 120 stacked together. The hole injection layer 151, the hole transport layer 152, the light-emitting layer 130, and the electron transport unit 140 located near the anode 110 constitute the first light-emitting unit 100U, and the hole injection layer 151, the hole transport layer 152, the light-emitting layer 130, and the electron transport unit 140 located near the cathode 120 constitute the second light-emitting unit 100U.

[0128] It should be noted that Figures 2-3 and 5-12 are simplified schematic diagrams of the display panel 300 after omitting the driving circuit layer 330.

[0129] In some embodiments, as shown in Figures 5 and 6, each light-emitting unit 100U further includes a first functional layer 141, and the first functional layer 141 is closer to the cathode 120 than the light-emitting layer 130.

[0130] It should be understood that when the first functional layer 141 is closer to the cathode 120 than the light-emitting layer 130, the first functional layer 141 forms at least a portion of the electron transport unit 140 (see FIG2).

[0131] In some examples, the first functional layer 141 may include at least one of an electron injection layer, an electron transport layer, and a hole blocking layer. For an understanding of the electron injection layer, electron transport layer, and hole blocking layer, please refer to the foregoing exemplary descriptions of the electron injection layer, electron transport layer, and hole blocking layer; these will not be repeated here.

[0132] In some examples, the first functional layer 141 may be an electronic transport layer.

[0133] In some examples, when the display panel 300 includes a first light-emitting device 201, a second light-emitting device 202 and a third light-emitting device 203, the first functional layer 141 can be a structure that is fully connected, that is, the first functional layer 141 can be a common film layer shared by multiple light-emitting devices 200.

[0134] In some embodiments, the material of the first functional layer 141 includes a metal oxide material.

[0135] Metal oxide materials, as semiconductor materials, exhibit n-type conductivity in electrical terms, giving the first functional layer 141 superior photoelectric properties and enabling it to perform electron transport functions.

[0136] For example, the aforementioned metal oxide material can be zinc oxide (ZnO) or zinc oxide containing a doped metal element. The doped metal element includes, for example, at least one selected from magnesium (Mg), aluminum (Al), tin (Sn), and manganese (Mn). For instance, the metal oxide material can be zinc oxide containing magnesium, also known as zinc magnesium oxide (ZnMgO).

[0137] In some embodiments, the thickness D4 of the first functional layer 141 ranges from 20 nm to 40 nm.

[0138] For example, the thickness D4 of the first functional layer 141 can be 20nm, 23nm, 25nm, 30nm, 35nm, 38nm or 40nm, etc.

[0139] By setting the above, the thickness D4 of the first functional layer 141 can be within a suitable range, thereby improving the electron transport efficiency of the first functional layer 141 and improving the efficiency of the light-emitting device 200.

[0140] In some cases, the material of the first functional layer 141 contains intrinsic vacancy defects (e.g., oxygen vacancy defects) as well as defects generated during operation, such as point defects and / or surface defects, and may also include exposed dangling bonds. The presence of these defects can reduce the performance and lifetime of the QLED light-emitting device.

[0141] In some implementations, hydrogen treatment is used to passivate intrinsic vacancy defects in the material of the first functional layer 141, as well as defects generated during operation, thereby improving the performance and lifespan of the QLED light-emitting device. Furthermore, the presence of hydrogen in the first functional layer 141 can act as a shallow donor, enhancing its conductivity.

[0142] For example, when an acidic encapsulant (e.g., acrylic encapsulant) is used to encapsulate the light-emitting device 200, the acidic encapsulant will undergo a cross-linking and curing reaction under ultraviolet light. During this process, hydrogen atoms or hydrogen ions will be released. These hydrogen atoms or hydrogen ions will diffuse to the first functional layer 141 and fill some of the defects inside the first functional layer 141, which can improve the performance and lifespan of the light-emitting device 200 to a certain extent.

[0143] However, as the working time of the light-emitting device 200 increases, the hydrogen elements produced by the hydrogen treatment method will gradually be depleted, causing the performance of the light-emitting device 200 to drop significantly, failing to meet the stability requirements of the light-emitting device 200, and reducing the lifespan of the light-emitting device 200.

[0144] Based on this, some embodiments of this disclosure provide a light-emitting device 200. As shown in Figures 5 and 6, the light-emitting device 200 includes a second functional layer 210. The second functional layer 210 is located on one side of the light-emitting structural layer 100. The material of the second functional layer 210 includes a first metal element and hydrogen.

[0145] For example, as shown in Figures 5 and 6, the second functional layer 210 is located on the side of the light-emitting structure layer 100 away from the substrate 310.

[0146] For example, nuclear magnetic resonance spectroscopy (NMR) (e.g., solid-state nuclear magnetic resonance spectroscopy) can be used to qualitatively or quantitatively measure the first metal element and hydrogen element in the second functional layer 210.

[0147] When the second functional layer 210 is located on one side of the light-emitting structure layer 100, and the material of the second functional layer 210 includes the first metal element and hydrogen element, the second functional layer 210 has the function of storing hydrogen, which can increase the hydrogen content in the light-emitting device 200 and continuously release hydrogen element to the light-emitting structure layer 100. The released hydrogen element can be transported to the first functional layer 141 at least through the anode 110 or the cathode 120, continuously passivating the intrinsic vacancy defects in the material of the first functional layer 141, as well as the defects generated during long-term operation, so as to solve the problem of poor lifespan and stability of the light-emitting device 200, and improve the performance and lifespan of the light-emitting device 200. Here, the improved performance includes at least the light-emitting morphology.

[0148] Here, the form in which hydrogen is transported from the second functional layer 210 to the first functional layer 141 is not limited. For example, hydrogen can include one or any combination of hydride ions, neutral hydrogen atoms, and hydride anions. When hydrogen includes neutral hydrogen atoms, the form in which the neutral hydrogen atoms exist includes, but is not limited to, free radicals. Moreover, the hydrogen transported from the second functional layer 210 to the first functional layer 141 can be free hydrogen.

[0149] In some examples, as shown in Figure 6, the second functional layer 210 may be located on the side of the first functional layer 141 away from the cathode 120. In other words, the light-emitting device 200 may include a cathode 120, at least one light-emitting unit 100U, an anode 110, and the second functional layer 210, which are sequentially layered. In this case, the hydrogen element released by the second functional layer 210 can be transported to the first functional layer 141 at least via the anode 110, the hole transport unit 150, and the light-emitting layer 130. At this time, the transport distance of the hydrogen element released by the second functional layer 210 is relatively large.

[0150] In some other examples, as shown in Figure 5, the second functional layer 210 may be located on the side of the first functional layer 141 away from the anode 110. In other words, the light-emitting device 200 may include an anode 110, at least one light-emitting unit 100U, a cathode 120, and the second functional layer 210, which are sequentially layered. In this case, the hydrogen element released by the second functional layer 210 can be transported to the first functional layer 141 at least via the cathode 120. In this case, the transport distance of the hydrogen element released by the second functional layer 210 is relatively small.

[0151] In cases where the light-emitting device 200 includes a second functional layer 210, in some embodiments, the material of the encapsulation layer 340 includes a neutral encapsulating adhesive.

[0152] As mentioned above, in some implementations, an acidic encapsulating adhesive is used to encapsulate the light-emitting device 200 to passivate defects in the material of the first functional layer 141. When the light-emitting device 200 includes a second functional layer 210, the second functional layer 210 can continuously release hydrogen to the first functional layer 141, passivating defects in the material of the first functional layer 141 and improving the performance and lifespan of the light-emitting device 200. Thus, the acidic encapsulating adhesive method can be omitted, and a neutral encapsulating adhesive can be used to encapsulate the light-emitting device 200.

[0153] In some embodiments, as shown in Figures 5 and 6, the second functional layers 210 of a plurality of light-emitting devices 200 are connected together.

[0154] For example, as shown in Figures 5 and 6, when the second functional layers 210 of the plurality of light-emitting devices 200 are connected, the second functional layer 210 is also formed on the side of the pixel defining layer 321 away from the substrate 310.

[0155] With the above configuration, the second functional layer 210 can be a common film layer for multiple light-emitting devices 200, which simplifies the formation process of the second functional layer 210 and reduces the process cost of the light-emitting devices 200.

[0156] Here, there are no restrictions on the combination form of the first metal element and the hydrogen element in the second functional layer 210.

[0157] In some embodiments, as shown in Figures 5 and 6, in the second functional layer 210, the first metal element is connected to the hydrogen element by a chemical bond.

[0158] For example, the first metal element and the hydrogen element are connected by hydrogen bonds. For instance, hydrogen atoms are small enough to enter the crystal lattice of the first metal element and adsorb onto the surface of the first metal atom to form a metal hydride. Moreover, this reaction is reversible, enabling the second functional layer 210 to release hydrogen elements (e.g., hydrogen atoms or hydrogen ions). For example, the second functional layer 210 can release hydrogen elements by heating or ultraviolet light irradiation.

[0159] For example, Raman spectroscopy can be used to characterize the chemical bond between the first metal element and hydrogen. Specifically, Raman spectroscopy can be used to characterize the vibrations of hydrogen atoms and / or molecules, and the changes in these vibrations can be used to characterize the chemical bond between the first metal element and hydrogen.

[0160] Understandably, when the first metal element and hydrogen element are connected by chemical bonds, the first metal element and hydrogen element can form metal hydride to achieve the purpose of hydrogen storage. Moreover, there is a certain chemical bonding force between the first metal element and hydrogen element, which can make the binding force between the first metal element and hydrogen element stronger and achieve continuous release of hydrogen element. In this way, the hydrogen element released by the second functional layer 210 can continuously passivate the intrinsic vacancy defects in the material of the first functional layer 141, as well as the defects generated during operation, thereby improving the performance and lifespan of the light-emitting device 200.

[0161] Here, there are no restrictions on the type of the first metallic element, as long as it can continuously release hydrogen after combining with hydrogen. Moreover, the first metallic element can include one metallic element or multiple metallic elements (e.g., forming an alloy).

[0162] In some embodiments, the first metallic element includes at least one of Group IIA metallic elements, lanthanide metallic elements, and Group IVB metallic elements.

[0163] When the first metallic element includes a Group IIA metallic element, such as at least one of beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), and radium (Ra).

[0164] When the first metallic element includes a lanthanide metal, the lanthanide metal includes, for example, at least one of lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nb), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).

[0165] When the first metallic element includes a Group IVB metal, such as titanium (Ti), zirconium (Zr), hafnium (Hf), and... At least one of (Rf).

[0166] In some embodiments, the first metallic element includes Group IIIA metallic elements and Group VIII metallic elements.

[0167] For example, the first metallic element includes at least one of the group IIIA metallic elements selected from aluminum (Al), gallium (Ga), indium (In), and thallium (Tl).

[0168] For example, the group VIII metals included in the first metal element include at least one of iron (Fe), cobalt (Co), nickel (Ni), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), and platinum (Pt).

[0169] Through the above configuration, the first metal element and the hydrogen element can be connected by chemical bonds to form a metal hydride. Thus, as mentioned earlier, the continuous release of hydrogen can be achieved, allowing the hydrogen released by the second functional layer 210 to continuously passivate defects in the material of the first functional layer 141, thereby improving the performance and lifespan of the light-emitting device 200.

[0170] In some embodiments, the first metallic element includes a Group IIIA metallic element and a Group VIII metallic element, wherein the mass ratio of the Group IIIA metallic element to the Group VIII metallic element ranges from 3:100 to 20:100.

[0171] For example, the mass ratio of Group IIIA metals to Group VIII metals can be 3:100, 5:100, 7:100, 9:100, 11:100, 13:100, 15:100, 17:100 or 20:100, etc.

[0172] For example, the first metallic element includes aluminum and nickel, and the mass ratio of aluminum to nickel ranges from 3:100 to 20:100. Examples include 3:100, 5:100, 7:100, 8:100, 10:100, 13:100, 15:100, 18:100, or 20:100.

[0173] When the first metal element includes both Group IIIA and Group VIII metal elements, and the mass ratio of Group IIIA to Group VIII metal elements is in the range of 3:100 to 20:100, compared to cases where the first metal element includes only Group IIIA or Group VIII metal elements, the first metal element has a stronger binding performance with hydrogen, and can form a more stable metal hydride. This can improve the effect of the second functional layer 210 in continuously passivating defects in the material of the first functional layer 141, thereby further improving the performance and lifespan of the light-emitting device 200.

[0174] In some examples, other functional film layers are disposed between the second functional layer 210 and the layer of the anode 110 and the cathode 120 that is closer to the second functional layer 210.

[0175] In some other examples, the second functional layer 210 and the anode 110 are in contact with the layer of the cathode 120 closer to the second functional layer 210. The arrangement of the second functional layer 210 and the layer of the anode 110 closer to the cathode 120 in this case will be described exemplarily below.

[0176] In some embodiments, as shown in Figures 7 and 8, the second functional layer 210 is reused as the layer closer to the second functional layer 210 between the anode 110 and the cathode 120.

[0177] For example, as shown in Figure 7, the second functional layer 210 is reused as a cathode 120; as shown in Figure 8, the second functional layer 210 is reused as an anode 110.

[0178] For example, as shown in Figures 7 and 8, the layer closer to the second functional layer 210 in the anode 110 and the cathode 120 is the layer farther away from the substrate 310 in the anode 110 and the cathode 120.

[0179] Understandably, the second functional layer 210 includes the first metal element, giving it a certain conductivity. Therefore, the second functional layer 210 can be reused as the electrode structure in the light-emitting structure layer 100. With this configuration, on the one hand, a layer closer to the second functional layer 210 in both the anode 110 and the cathode 120, as well as the second functional layer 210 itself, can be formed simultaneously in a single film-forming process, thus simplifying the fabrication process of the light-emitting device 200. On the other hand, the thickness of the second functional layer 210 and the layer closer to the second functional layer 210 in both the anode 110 and the cathode 120 can be relatively small, which is beneficial for making the display panel 300 thinner and lighter.

[0180] For example, when the second functional layer 210 is reused as the layer closer to the second functional layer 210 between the anode 110 and the cathode 120, the thickness of the second functional layer 210 ranges from 20nm to 80nm; for example, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm or 80nm, etc.

[0181] In some other embodiments, as shown in Figures 5 and 6, the second functional layer 210 is not reused; that is, the layer closer to the second functional layer 210 in the anode 110 and cathode 120 is independently disposed from the layer closer to the second functional layer 210 in the anode 110 and cathode 120. In this case, as mentioned above, the materials of the anode 110 and cathode 120 may include metallic materials.

[0182] In some embodiments, as shown in Figures 5 and 6, the material of the layer closer to the second functional layer 210 in the anode 110 and cathode 120 includes a second metallic element.

[0183] For example, nuclear magnetic resonance spectroscopy (NMR) (e.g., solid-state nuclear magnetic resonance spectroscopy) can be used to qualitatively or quantitatively measure the second metallic element in the anode 110 or cathode 120.

[0184] For example, the second metallic element includes aluminum; and for example, the second metallic element includes magnesium and silver.

[0185] In some examples, the second metal element is not the same as the first metal element; for example, the second metal element includes magnesium and silver, while the first metal element includes aluminum and nickel.

[0186] In some embodiments, at least some of the elements in the first metal element are of the same element type as the second metal element.

[0187] In some examples, the first and second metallic elements are of the same element type. For instance, the second metallic element is magnesium and silver, and the first metallic element includes magnesium and silver.

[0188] In some other examples, some elements in the first metal element are of the same type as those in the second metal element. That is, in addition to the portion of the first metal element that is of the same type as the second metal element, it may also include a portion of the first metal element that is of a different type. Here, the portion of the first metal element that is of a different type is, for example, a Group VIII metal element. This can improve the hydrogen storage performance of the second functional layer 210. For example, the second metal element is aluminum, and the first metal element includes aluminum and nickel. Another example is that the second metal element is magnesium and silver, and the first metal element includes magnesium, silver, and nickel.

[0189] When at least some of the elements in the first metal element are the same as the elements in the second metal element, the layer closer to the second functional layer 210 in the anode 110 and cathode 120 has better bonding force with the second functional layer 210 and can optimize the interface performance between the two.

[0190] In some embodiments, the second functional layer 210 includes a plurality of substructures. The plurality of substructures included in the second functional layer 210 will be described below.

[0191] In some embodiments, as shown in FIG9, the second functional layer 210 includes at least two functional sub-sections 210a arranged along a first direction X, where the first direction X is the direction in which the anode 110 and the cathode 120 are disposed opposite to each other. In any two adjacent functional sub-sections 210a, the concentration of hydrogen in the functional sub-section 210a closer to the first functional layer 141 is less than the concentration of hydrogen in the functional sub-section 210a farther from the first functional layer 141.

[0192] In some examples, the concentration of hydrogen in the second functional layer 210 gradually increases in the direction away from the light-emitting structural layer 100.

[0193] Here, the concentration of hydrogen can be either mass concentration or volume concentration; there is no limitation.

[0194] It should be understood that the first metallic elements included in each functional subsection 210a may be the same or different, and no restriction is set here.

[0195] For example, when the first metal elements included in two adjacent functional sub-sections 210a are different, the interface between adjacent functional sub-sections 210a can be determined by the difference in hydrogen concentration. For instance, if the hydrogen concentration in one functional sub-section 210a is c1 and the hydrogen concentration in the other functional sub-section 210a is c2 (c1 and c2 are not equal), then the location in the second functional layer 210 where the hydrogen ion concentration changes is the interface between the two functional sub-sections 210a.

[0196] For example, nuclear magnetic resonance spectroscopy (NMR) (e.g., proton nuclear magnetic resonance spectroscopy) can be used to quantitatively measure the concentration of hydrogen in each functional subdivision 210a.

[0197] It should be noted that, although Figure 9 shows the light-emitting device 200 as a positively positioned light-emitting device and the second functional layer 210 as including two functional sub-parts 210a, it should be understood that this disclosure does not limit the structural form of the light-emitting device 200 including the functional sub-parts 210a, nor the number of functional sub-parts 210a included in the second functional layer 210. For example, in other examples, the second functional layer 210 may include three or more functional sub-parts 210a; or, for example, in other examples, the light-emitting device 200 is an inverted light-emitting device, and the second functional layer 210 includes at least two functional sub-parts 210a.

[0198] Understandably, a high concentration of hydrogen released from the second functional layer 210 may create an acidic atmosphere, damaging the light-emitting structure layer 100 (e.g., causing material degradation of the light-emitting structure layer 100). By configuring it as described above, the functional sub-section 210a with a higher hydrogen concentration can be positioned relatively far from the light-emitting structure layer 100, while the functional sub-section 210a with a lower hydrogen concentration can be positioned relatively close to the light-emitting structure layer 100. This allows for a relatively longer transport distance of the hydrogen released from the functional sub-section 210a with the higher hydrogen ion concentration, which can reduce the concentration of hydrogen transported into the light-emitting structure layer 100 to some extent, reducing the impact of the high-hydrogen-concentration atmosphere on the light-emitting structure layer 100 and improving the lifespan of the light-emitting device 200.

[0199] In some embodiments, as shown in FIG10, the second functional layer 210 includes at least two functional sublayers 211 arranged along a first direction X, where the anode 110 and cathode 120 are disposed opposite to each other. The at least two functional sublayers 211 include a first functional sublayer 211A and a second functional sublayer 211B, with the first functional sublayer 211A being closer to the first functional layer 141 than the second functional sublayer 211B. The first metal element included in the first functional sublayer 211A is different from the first metal element included in the second functional sublayer 211B. Specifically, the bonding strength between the first metal element included in the first functional sublayer 211A and hydrogen is greater than the bonding strength between the first metal element included in the second functional sublayer 211B and hydrogen.

[0200] For example, the first functional sublayer 211A includes a first metal element A (including one or more metals), the second functional sublayer 211B includes a first metal element B (including one or more metals), and the bonding strength between the first metal element A and the hydrogen element is greater than the bonding strength between the first metal element B and the hydrogen element.

[0201] For example, the binding strength between the first metal element A and hydrogen element, and the binding strength between the first metal element B and hydrogen element, can be compared as follows: A second functional layer 210A (not shown in the figure) comprising a hydride of the first metal element A, and a second functional layer 210B (not shown in the figure) comprising a hydride of the first metal element B, are prepared respectively, and the mass concentration of hydrogen element in the second functional layer 210A and the second functional layer 210B is made the same; then, after the same hydrogen release time, the amount of remaining hydrogen element in the second functional layer 210A and the second functional layer 210B is measured respectively. The second functional layer 210A and the second functional layer 210B containing more remaining hydrogen element have a stronger binding strength with the first metal element.

[0202] Understandably, when the bonding strength between the first metal element and hydrogen element included in the second functional sublayer 211B is relatively weak, the second functional sublayer 211B may release a relatively large amount of hydrogen element during the initial release period, which may form an acidic atmosphere and damage the light-emitting structure layer 100 (e.g., causing material degradation of the light-emitting structure layer 100). Through the above arrangement, the second functional sublayer 211B can be relatively far away from the light-emitting structure layer 100, and the first functional sublayer 211A can be relatively close to the light-emitting structure layer 100. This allows the hydrogen element released from the second functional sublayer 211B to travel a relatively long distance, which can reduce the concentration of hydrogen element transported into the light-emitting structure layer 100 to some extent, reducing the impact of a high hydrogen concentration atmosphere on the light-emitting structure layer 100 and improving the lifespan of the light-emitting device 200.

[0203] In some embodiments, as shown in Figures 5 and 6, under the first preset conditions, the mass percentage of hydrogen in the material of the second functional layer 210 ranges from 5% to 10%.

[0204] For example, the first preset condition is under normal temperature and pressure conditions.

[0205] For example, the mass percentage of hydrogen in the material of the second functional layer 210 can be 5%, 5.5%, 6%, 6.5%, 7%, 7.5%, 8%, 8.5%, 9%, 9.5%, or 10%, etc.

[0206] For an understanding of the methods for quantitative measurement of hydrogen, please refer to the description in the preceding sections, which will not be repeated here.

[0207] When the mass percentage of hydrogen in the material of the second functional layer 210 is low (e.g., below 5%), the amount of hydrogen released by the second functional layer 210 is relatively small, which may affect the passivation effect of the second functional layer 210 on defects in the material of the first functional layer 141. When the mass percentage of hydrogen in the material of the second functional layer 210 is high (e.g., above 10%), the amount of hydrogen released by the second functional layer 210 is relatively large, which may form an acidic atmosphere and damage the light-emitting structure layer 100. Therefore, by setting the above, the mass percentage of hydrogen in the material of the second functional layer 210 can be kept within a suitable range, which can improve the passivation effect of the second functional layer 210 on defects in the material of the first functional layer 141 and avoid damage to the light-emitting structure layer 100 by the hydrogen released by the second functional layer 210, thereby improving the performance and lifespan of the light-emitting device 200.

[0208] In some embodiments, as shown in Figures 5 and 6, under the second preset conditions, the volume percentage of hydrogen in the material of the second functional layer 210 ranges from 10%. 18 cm -3 ~10 28 cm -3 .

[0209] For example, the second preset condition is under normal temperature and pressure conditions.

[0210] Here, the volume percentage of hydrogen in the material of the second functional layer 210 can be understood as having a volume of 1 cm³. 3 The number of hydrogen elements in the material of the second functional layer 210. For example, the volume percentage of hydrogen elements in the material of the second functional layer 210 is 10. 18 cm - 3 In the case of a volume of 1cm 3 The second functional layer 210 has 10 hydrogen atoms in its material. 18 For an understanding of the methods for quantitative measurement of hydrogen, please refer to the description in the preceding sections, which will not be repeated here.

[0211] For example, a first metal element can be selected as a reference element to measure the volume percentage of hydrogen in the material of the second functional layer 210. Specifically, the method involves performing two NMR analyses on the material of the second functional layer 210, measuring the peak area X1 of hydrogen and the peak area X2 of the first metal element, respectively. Then, using the number of first metal elements and X1 / X2, the number of hydrogen elements can be calculated. Finally, the ratio of the number of hydrogen elements to the volume of the material of the second functional layer 210 is calculated to obtain the volume percentage of hydrogen in the material of the second functional layer 210. Here, the first metal element used as the reference element can be a lanthanide metal element in a cationic state, such as Ce. 3+ Pr 3+ 、Nb 3+ Pm 3+ 、Sm 3+ Eu 3+ Gd 3+ 、Tb 3+ Dy 3+ Ho 3+ Er 3+ Tm 3+ or Yb 3+ wait.

[0212] For example, in the material of the second functional layer 210, the volume percentage of hydrogen can be 10. 18 cm -3 10 20 cm -3 10 22 cm -3 10 24 cm -3 5×10 25 cm -3 10 26 cm -3 Or 10 28 cm -3 wait.

[0213] Similarly, in the material of the second functional layer 210, the volume fraction of hydrogen is relatively low (e.g., less than 10). 18 cm -3 In cases where the second functional layer 210 passivates defects in the material of the first functional layer 141, it may affect the effectiveness of the second functional layer 210 in passivating defects in the material of the first functional layer 141; if the volume fraction of hydrogen in the material of the second functional layer 210 is high (e.g., higher than 10), it may affect the effectiveness of the second functional layer 210 in passivating defects in the material of the first functional layer 141. 28 cm -3In the event of a certain condition, the light-emitting structure layer 100 may be damaged. Therefore, by the above arrangement, the volume ratio of hydrogen in the material of the second functional layer 210 can be kept within a suitable range, which can improve the passivation effect of the second functional layer 210 on the defects in the material of the first functional layer 141, and can prevent the hydrogen released by the second functional layer 210 from damaging the light-emitting structure layer 100, thereby improving the performance and lifespan of the light-emitting device 200.

[0214] In some embodiments, as shown in Figures 5 and 6, the thickness D1 of the second functional layer 210 ranges from 15 nm to 100 nm.

[0215] For example, the thickness D1 of the second functional layer 210 ranges from 15nm to 60nm; for another example, the thickness D1 of the second functional layer 210 ranges from 20nm to 80nm; for yet another example, the thickness D1 of the second functional layer 210 ranges from 30nm to 100nm.

[0216] For example, the thickness D1 of the second functional layer 210 can be 15nm, 20nm, 30nm, 45nm, 60nm, 75nm, 80nm, 90nm or 100nm, etc.

[0217] When the thickness D1 of the second functional layer 210 is relatively thin (e.g., less than 15 nm), the amount of hydrogen released by the second functional layer 210 is relatively small, which may affect the passivation effect of the second functional layer 210 on defects in the material of the first functional layer 141. When the thickness D1 of the second functional layer 210 is relatively thick (e.g., more than 100 nm), the thickness of the light-emitting device 200 may be relatively thick, which is not conducive to the thinning of the display panel 300. Moreover, since the light transmittance of the first metal element in the second functional layer 210 is relatively poor, when the second functional layer 210 is located on the light-emitting side of the light-emitting structure layer 100 and the thickness D1 of the second functional layer 210 is relatively thick, the second functional layer 210 may affect the light-emitting efficiency of the light-emitting device 200. Therefore, through the above settings, the thickness D1 of the second functional layer 210 can be kept within a suitable range. This can improve the effect of the second functional layer 210 in passivating defects in the material of the first functional layer 141, facilitate the thinning of the display panel 300, and improve the light emission efficiency of the light-emitting device 200. In this way, the performance and lifespan of the light-emitting device 200 can be improved.

[0218] In some embodiments, the chemical bond between the first metal element and the hydrogen element is relatively strong. In the early stage of operation of the light-emitting device 200, that is, during the initial period of use of the light-emitting device 200, the second functional layer 210 releases relatively less hydrogen, resulting in a higher defect density in the first functional layer 141 in the early stage of operation of the light-emitting device 200.

[0219] In some embodiments, the light-emitting device 200 undergoes positive aging. Specifically, during the initial period after power-on, the efficiency of the light-emitting device 200 shows a significant increase, sometimes accompanied by a significant decrease in the turn-on voltage. This phenomenon can improve the efficiency of the light-emitting device 200 to some extent. As a possible reason, the positive aging of the light-emitting device 200 is due to the presence of numerous defects on the surface of the electron transport material (e.g., ZnO or ZnMgO) used in the electron transport unit 140. These defects are occupied by active elements in the environment (e.g., hydrogen), which can improve the performance of the light-emitting device 200.

[0220] In some embodiments, as shown in Figures 11 and 12, the light-emitting device 200 further includes a third functional layer 220. The third functional layer 220 is located on the side of the second functional layer 210 away from the first functional layer 141. The material of the third functional layer 220 includes a matrix material and hydrogen; the matrix material includes non-metallic elements.

[0221] For example, the non-metallic elements included in the matrix material may include at least one of nitrogen, silicon, oxygen and carbon.

[0222] For example, hydrogen can be combined with the matrix material through chemical adsorption and / or physical adsorption.

[0223] For example, nuclear magnetic resonance spectroscopy (NMR) (e.g., solid-state nuclear magnetic resonance spectroscopy) can be used to qualitatively or quantitatively measure the non-metallic elements and hydrogen elements in the third functional layer 220.

[0224] Through the above configuration, firstly, the third functional layer 220 can release hydrogen to the first functional layer 141 of the light-emitting structural layer 100, passivating defects in the material of the first functional layer 141 and improving the performance and lifespan of the light-emitting device 200. Secondly, the bonding force between the non-metallic elements in the third functional layer 220 and the substrate material is relatively weak, allowing hydrogen to be released in the early stages of operation of the light-emitting device 200 to compensate for the insufficient hydrogen release from the second functional layer 210, ensuring sufficient hydrogen release at each stage of use and improving the stability of the light-emitting device 200's performance. Thirdly, the hydrogen released by the third functional layer 220 in the early stages of operation of the light-emitting device 200 can accelerate the positive aging process of the light-emitting device 200, improving its performance and reducing its power consumption.

[0225] Here, the form in which hydrogen is transported from the third functional layer 220 to the first functional layer 141 is not limited. For example, hydrogen can include one or any combination of hydride ions, neutral hydrogen atoms, and hydride anions. When hydrogen includes neutral hydrogen atoms, the form in which the neutral hydrogen atoms exist includes, but is not limited to, free radicals. Moreover, the hydrogen transported from the third functional layer 220 to the first functional layer 141 can be free hydrogen.

[0226] In some embodiments, as shown in Figures 11 and 12, the third functional layers 220 of a plurality of light-emitting devices 200 are connected together.

[0227] For example, as shown in Figures 11 and 12, when the third functional layers 220 of multiple light-emitting devices 200 are connected, the third functional layer 220 is also formed on the side of the pixel defining layer 321 away from the substrate 310.

[0228] With the above configuration, the third functional layer 220 can be a common film layer for multiple light-emitting devices 200, which simplifies the formation process of the third functional layer 220 and reduces the process cost of the light-emitting devices 200.

[0229] In some embodiments, as shown in Figures 11 and 12, the substrate material includes at least one of silicon nitride (SiNx), silicon oxynitride (SiONx), and silicon oxide (SiOx).

[0230] When the substrate material includes at least one of silicon nitride, silicon oxynitride, and silicon oxide, the process for forming the third functional layer 220 can be plasma-enhanced chemical vapor deposition (PECVD). The Si source used can be SiH4, and the N source used can be NH3. That is, both the Si source and the N source used contain hydrogen. As a result, there will be residual hydrogen in the formed third functional layer 220. In this way, while ensuring that the third functional layer 220 passivates defects in the material of the first functional layer 141, improves the performance stability of the light-emitting device 200, and accelerates the forward aging process of the light-emitting device 200, the process of introducing hydrogen into the third functional layer 220 is simplified, thereby simplifying the formation process of the third functional layer 220.

[0231] In some embodiments, as shown in Figures 11 and 12, the matrix material includes a porous material; the porous material includes at least one of metal-organic framework materials, nanoporous materials, and organic molecular cages.

[0232] For example, nanoporous materials may include at least one of graphene and carbon nanotubes.

[0233] An organic molecular cage is an organic material with an inherent cavity. In some examples, protons (i.e., hydrogen elements, such as hydrogen ions) can bind to atoms or molecules within the organic molecular cage to form a protonated organic molecular cage.

[0234] The aforementioned porous material has a porous structure and can combine with hydrogen through chemical adsorption, physical adsorption, or protonation to form the third functional layer 220. Therefore, by including a porous material in the matrix material, the hydrogen in the material of the third functional layer 220 can be dispersed in the matrix material, which can improve the process feasibility of forming the third functional layer 220.

[0235] In some embodiments, as shown in Figures 11 and 12, the porosity of the porous material is greater than or equal to 0.01%.

[0236] Here, the porosity of a porous material refers to the percentage of pore volume in the porous material to the total volume of the porous material in its natural state.

[0237] For example, the porosity of the porous material can be 0.01%, 0.03%, 0.05%, 0.08%, 0.10%, 0.30%, or 0.1%, etc.

[0238] When the porosity of the porous material is greater than or equal to 0.01%, the porosity of the porous material is relatively high, which makes the space for accommodating hydrogen elements relatively large. In this way, the hydrogen content in the third functional layer 220 can be increased, thereby enhancing the effect of the third functional layer 220 in passivating defects in the material of the first functional layer 141, improving the performance stability of the light-emitting device 200, and accelerating the positive aging process of the light-emitting device 200.

[0239] In some embodiments, as shown in Figures 11 and 12, the surface of the porous material has active sites, and the area density of the active sites ranges from 1 × 10⁻⁶. 11 cm -2 ~5×10 12 cm -2 .

[0240] For example, when the porous material is a metal-organic framework material, the active site can be a metal atom; when the porous material is a nanoporous material with a surface modified with metal atoms, the active site can be a metal atom. Here, the metal atom is, for example, lithium (Li), magnesium (Mg), titanium (Ti), or palladium (Pd).

[0241] When the active site includes metal atoms, the method for quantitative measurement of metal atoms can be found in the description above, and will not be repeated here.

[0242] For example, when the porous material is a carbon-based nanoporous material with surface-modified unsaturated bonds (e.g., carbon-carbon double bonds and / or carbon-carbon triple bonds), the aforementioned active sites can be unsaturated bonds. When the porous material is an organic molecular cage, the aforementioned active sites can be unsaturated bonds (e.g., carbon-carbon double bonds and / or carbon-carbon triple bonds).

[0243] When the active site includes an unsaturated bond, the unsaturated bond has the advantage of readily combining with hydrogen. For example, hydrogen (such as hydrogen in a hydrogen molecule) can insert into carbon-carbon double bonds and / or carbon-carbon triple bonds to form hydrogenated organic compounds.

[0244] For example, infrared absorption spectroscopy can be used to detect the characteristic absorption peaks of unsaturated bonds, thereby achieving qualitative or quantitative measurement of unsaturated bonds. The characteristic absorption peak of a carbon-carbon double bond is, for example, located at 1630 cm⁻¹. -1 ~1680cm - 1 The characteristic absorption peak of a carbon-carbon triple bond is, for example, at 2100 cm⁻¹. -1 ~2300cm -1 Furthermore, when hydrogen (such as the hydrogen element in a hydrogen molecule) inserts into an unsaturated bond, the characteristic absorption peak of the unsaturated bond in the infrared absorption spectrum decreases or disappears. Therefore, infrared absorption spectroscopy can also be used to qualitatively measure the combination of hydrogen with unsaturated bonds.

[0245] For example, the active sites on the surface of the porous material are chemically active sites.

[0246] For example, in porous materials, the area density of active sites can be 1×10⁻⁶. 11 cm -2 3×10 11 cm -2 5×10 11 cm -2 8×10 11 cm -2 1×10 12 cm -2 3×10 12 cm -2 Or 5×10 12 cm -2 wait.

[0247] Understandably, hydrogen elements in the third functional layer 220 can bind to the porous material through active sites. In the porous material, the area density of active sites ranges from 1 × 10⁻⁶. 11 cm -2 ~5×10 12 cm -2In this case, more hydrogen elements can be combined on the porous material, which can increase the hydrogen content in the third functional layer 220, improve the passivation effect of the third functional layer 220 on the defects in the material of the first functional layer 141, improve the performance stability of the light-emitting device 200, and accelerate the positive aging process of the light-emitting device 200.

[0248] In some embodiments, as shown in Figures 11 and 12, the matrix material includes an insulating polymer material.

[0249] For example, the insulating polymer material may be polymethyl methacrylate or polytetrafluoroethylene, etc.

[0250] For example, when the matrix material includes an insulating polymer material, the hydrogen element in the third functional layer 220 can be hydrogen element from a protic acid (e.g., acrylic acid). That is, the third functional layer 220 can include hydrogen element by mixing the insulating polymer material with the protic acid.

[0251] By including insulating polymer materials in the matrix material, hydrogen elements in the material of the third functional layer 220 can be dispersed in the insulating polymer material through mixing the matrix material with protic acid, which can improve the process feasibility of forming the third functional layer 220.

[0252] In some embodiments, as shown in Figures 11 and 12, the thickness D2 of the third functional layer 220 ranges from 60 nm to 1000 nm.

[0253] For example, the thickness D2 of the third functional layer 220 ranges from 60nm to 200nm; for another example, the thickness D2 of the third functional layer 220 ranges from 200nm to 600nm; for yet another example, the thickness D2 of the third functional layer 220 ranges from 200nm to 1000nm.

[0254] For example, the thickness D2 of the third functional layer 220 can be 60nm, 80nm, 100nm, 130nm, 160nm, 200nm, 400nm, 600nm, 700nm, 900nm or 1000nm, etc.

[0255] When the thickness D2 of the third functional layer 220 is relatively thin (e.g., less than 60 nm), the amount of hydrogen released by the third functional layer 220 is relatively small. When the thickness D2 of the third functional layer 220 is relatively thick (e.g., greater than 1000 nm), the thickness of the light-emitting device 200 may be relatively thick, which is not conducive to the thinning of the display panel 300. Therefore, through the above settings, the thickness D2 of the third functional layer 220 can be kept within a suitable range. This can improve the passivation effect of the third functional layer 220 on defects in the material of the first functional layer 141, improve the performance stability of the light-emitting device 200, and accelerate the positive aging process of the light-emitting device 200. It can also facilitate the thinning of the display panel 300. In this way, the performance and lifespan of the light-emitting device 200 can be improved.

[0256] It should be understood that the thickness of the second functional layer 210 and the third functional layer 220 can be set differently according to the device structure of the light-emitting device 200 and the setting position of the second functional layer 210 and the third functional layer 220. Examples will be given below.

[0257] In some embodiments, as shown in Figures 11 and 12, the light-emitting unit 100U further includes a fourth functional layer 170 located between the anode 110 and the light-emitting layer 130. The fourth functional layer 170 is used for at least the transport of holes; the material of the fourth functional layer 170 includes organic materials.

[0258] It should be understood that when the fourth functional layer 170 is located between the light-emitting layer 130 and the anode 110, the fourth functional layer 170 forms at least a portion of the hole transport unit 150.

[0259] In some examples, the fourth functional layer 170 may include at least one of a hole injection layer 151, a hole transport layer 152, and an electron blocking layer. For example, as shown in Figures 11 and 12, the fourth functional layer 170 includes a hole injection layer 151 and a hole transport layer 152. For an understanding of the hole injection layer 151, the hole transport layer 152, and the electron blocking layer, please refer to the foregoing exemplary description of the hole injection layer 151, the hole transport layer 152, and the electron blocking layer; these details will not be repeated here. For an understanding of the organic materials included in the fourth functional layer 170, please refer to the foregoing exemplary description of the materials of the hole injection layer 151 and the hole transport layer 152; these details will not be repeated here.

[0260] It should be understood that when the fourth functional layer 170 includes organic materials, the material of the fourth functional layer 170 is more susceptible to the effects of an acidic atmosphere than the materials of other film layers, leading to material degradation. Therefore, when the light-emitting unit 100U also includes the fourth functional layer 170, the thicknesses of the second functional layer 210 and the third functional layer 220 need to be set differently according to their respective positions.

[0261] In some examples, as shown in Figure 12, the anode 110 is closer to the second functional layer 210 than the cathode 120, and the thickness of the third functional layer ranges from 60nm to 200nm. For example, the thickness D2 of the third functional layer 220 is 60nm, 80nm, 100nm, 120nm, 140nm, 180nm, or 200nm.

[0262] It should be understood that when the anode 110 is closer to the second functional layer 210 than the cathode 120, the light-emitting device 200 is an inverted light-emitting device.

[0263] For example, when the anode 110 is closer to the second functional layer 210 than the cathode 120, the thickness of the second functional layer 210 is in the range of 15nm to 80nm. For example, the thickness D1 of the second functional layer 210 is 15nm, 20nm, 30nm, 40nm, 45nm, 50nm, 60nm, 70nm or 80nm, etc.

[0264] With the anode 110 closer to the second functional layer 210 than the cathode 120, the spacing between the anode 110, the fourth functional layer 170, and the third functional layer 220 is relatively small. This has two advantages: first, it allows the hydrogen released from the third functional layer 220 to have a relatively greater impact on the fourth functional layer 170; second, it makes the process of forming the third functional layer 220 (e.g., a silicon nitride growth process) take a relatively long time, thus making the process of forming the third functional layer 220 have a relatively greater impact on the fourth functional layer 170. Through these arrangements, the thickness of the third functional layer 220 can be relatively small, thereby reducing the impact of the hydrogen released from the third functional layer 220 and the process of forming the third functional layer 220 on the material of the fourth functional layer 170, and improving the lifetime of the light-emitting device 200.

[0265] In some other examples, as shown in Figure 11, the cathode 120 is closer to the second functional layer 210 than the anode 110, and the thickness D2 of the third functional layer 220 ranges from 200nm to 1000nm. For example, the thickness D2 of the third functional layer 220 is 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, or 1000nm.

[0266] It should be understood that when the cathode 120 is closer to the second functional layer 210 than the anode 110, the light-emitting device 200 is a positively positioned light-emitting device.

[0267] For example, the cathode 120 is closer to the second functional layer 210 than the anode 110. The thickness D1 of the second functional layer 210 ranges from 20nm to 100nm. For example, the thickness D1 of the second functional layer 210 is 20nm, 30nm, 40nm, 50nm, 55nm, 60nm, 70nm, 80nm, 90nm or 100nm, etc.

[0268] When the cathode 120 is closer to the second functional layer 210 than the anode 110, the spacing between the anode 110 and the fourth functional layer 170 and the third functional layer 220 is relatively large. In this case, the hydrogen element released by the third functional layer 220 and the process of forming the third functional layer 220 have a relatively small impact on the material of the fourth functional layer 170. Therefore, the thickness of the third functional layer 220 can be relatively large (for example, the thickness D2 of the third functional layer 220 is in the range of 200nm to 1000nm) to improve the effect of the third functional layer 220 on improving the performance and lifespan of the light-emitting device 200.

[0269] In addition to whether the light-emitting device 200 is a positive or negative light-emitting device, other factors can affect the thickness of the second functional layer 210 and / or the third functional layer 220 in the light-emitting device 200. Examples will be given below.

[0270] Firstly, the light-emitting structure layer 100 has a light-emitting side and a non-light-emitting side disposed opposite to each other. When the second functional layer 210 and / or the third functional layer 220 are located on the non-light-emitting side of the light-emitting structure layer 100, the thickness of the second functional layer 210 and / or the third functional layer 220 can be relatively thick. When the second functional layer 210 and / or the third functional layer 220 are located on the light-emitting side of the light-emitting structure layer 100, the thickness of the second functional layer 210 and / or the third functional layer 220 can be relatively thin. This is because when the second functional layer 210 and / or the third functional layer 220 are located on the light-emitting side of the light-emitting structure layer 100, the electrodes adjacent to the second functional layer 210 (anode 110 or cathode 120, for example, metal electrodes) are relatively thin, resulting in relatively weak protection for the other film layers in the light-emitting unit 100U besides the first functional layer 141. This makes it easier for hydrogen elements released by the second functional layer 210 and / or the third functional layer 220 to damage the other film layers in the light-emitting unit 100U besides the first functional layer 141. Therefore, the impact of hydrogen elements released by the second functional layer 210 and / or the third functional layer 220 on the other film layers in the light-emitting unit 100U besides the first functional layer 141 can be reduced by thinning the second functional layer 210 and / or the third functional layer 220.

[0271] Secondly, when the second functional layer 210 is reused as the layer closer to the second functional layer 210 in either the anode 110 or the cathode 120, the thickness of the second functional layer 210 is relatively thick; when the second functional layer 210 is not reused as the layer closer to the second functional layer 210 in either the anode 110 or the cathode 120, the thickness of the second functional layer 210 is relatively thin. This is because when the second functional layer 210 is reused as the layer closer to the second functional layer 210 in either the anode 110 or the cathode 120, the second functional layer 210 also needs to take into account the function of the electrode.

[0272] Thirdly, when the light-emitting device 200 is a multilayer light-emitting device, the second functional layer 210 and / or the third functional layer 220 are relatively thicker than when the light-emitting device 200 is a single-layer light-emitting device. This is because when the light-emitting device 200 is a multilayer light-emitting device, the light-emitting device 200 includes at least two first functional layers 141, requiring more hydrogen elements to passivate defects in at least two first functional layers 141.

[0273] Therefore, in practical applications, the thickness range of the second functional layer 210 and / or the third functional layer 220 needs to be determined by considering the above factors. The thickness ranges of the second functional layer 210 and / or the third functional layer 220 obtained in some embodiments will be illustrated below.

[0274] In some examples, the light-emitting device 200 is a front-mounted light-emitting device, and the second functional layer 210 and the cathode 120 are independently configured (i.e., the second functional layer 210 is not reused as the cathode 120). The light-emitting structure layer 100 of the light-emitting device 200 includes a light-emitting unit 100U, and the second functional layer 210 and the third functional layer 220 are located on the non-light-emitting side of the light-emitting structure layer 100. In this case, the thickness of the second functional layer 210 can be in the range of 20nm to 80nm, for example, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, or 80nm. The thickness of the third functional layer 220 can be in the range of 200nm to 1000nm, for example, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, or 1000nm.

[0275] In some other examples, the light-emitting device 200 is an inverted light-emitting device, and the second functional layer 210 and the anode 110 are independently configured (i.e., the second functional layer 210 is not reused as the anode 110). The light-emitting structure layer 100 of the light-emitting device 200 includes a light-emitting unit 100U, and the second functional layer 210 and the third functional layer 220 are located on the non-light-emitting side of the light-emitting structure layer 100. In this case, the thickness of the second functional layer 210 can range from 15nm to 60nm, for example, 15nm, 20nm, 30nm, 40nm, 50nm, 55nm, or 60nm. The thickness of the third functional layer 220 can range from 60nm to 200nm, for example, 60nm, 80nm, 100nm, 120nm, 140nm, 160nm, 180nm, or 200nm.

[0276] In some other examples, the light-emitting device 200 is an inverted light-emitting device, the second functional layer 210 is reused as an anode 110, the light-emitting structure layer 100 of the light-emitting device 200 includes a light-emitting unit 100U, and the second functional layer 210 and the third functional layer 220 are located on the light-emitting side of the light-emitting structure layer 100. In this case, the thickness of the second functional layer 210 can range from 20nm to 80nm, for example, 20nm, 30nm, 40nm, 50nm, 65nm, 70nm, or 80nm. The thickness of the third functional layer 220 can range from 60nm to 200nm, for example, 60nm, 80nm, 110nm, 120nm, 140nm, 160nm, 180nm, or 200nm.

[0277] In some other examples, the light-emitting device 200 is a front-mounted light-emitting device, and the second functional layer 210 and the cathode 120 are independently configured (i.e., the second functional layer 210 is not reused as the cathode 120). The light-emitting structure layer 100 of the light-emitting device 200 includes a light-emitting unit 100U, and the second functional layer 210 and the third functional layer 220 are located on the light-emitting side of the light-emitting structure layer 100. In this case, the thickness of the second functional layer 210 can range from 20nm to 80nm, for example, 20nm, 30nm, 40nm, 55nm, 60nm, 70nm, or 80nm. The thickness of the third functional layer 220 can range from 200nm to 600nm, for example, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, or 600nm.

[0278] In some other examples, the light-emitting device 200 is a front-mounted light-emitting device, the second functional layer 210 and the cathode 120 are independently configured (i.e., the second functional layer 210 is not reused as the cathode 120), and the light-emitting structure layer 100 of the light-emitting device 200 includes two light-emitting units 100U. In this case, the thickness of the second functional layer 210 can range from 30nm to 100nm, for example, 30nm, 40nm, 55nm, 60nm, 70nm, 80nm, 90nm, or 100nm. The thickness of the third functional layer 220 can range from 200nm to 1000nm, for example, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, or 1000nm.

[0279] In some embodiments, as shown in Figures 11 and 12, the thickness D3 of the layer closer to the second functional layer 210 in the anode 110 and cathode 120 ranges from 20 nm to 100 nm.

[0280] For example, the thickness D3 of the layer closer to the second functional layer 210 in the anode 110 and cathode 120 ranges from 60 nm to 100 nm.

[0281] For example, as shown in FIG11, the light-emitting device 200 is a positive light-emitting device. Among the anode 110 and the cathode 120, the layer closer to the second functional layer 210 is the cathode 120, and the thickness D3 of the cathode 120 is in the range of 20nm to 100nm, such as 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm or 100nm.

[0282] As an example, as shown in FIG12, the light-emitting device 200 is an inverted light-emitting device. Among the anode 110 and the cathode 120, the layer closer to the second functional layer 210 is the anode 110, and the thickness D3 of the anode 110 ranges from 20nm to 100nm, for example, 20nm, 30nm, 40nm, 55nm, 60nm, 70nm, 80nm, 90nm or 100nm.

[0283] Here, the layer closer to the second functional layer 210 in the anode 110 and cathode 120 is referred to as the selected electrode. On the one hand, the hydrogen released from the second functional layer 210 and / or the third functional layer 220 needs to be transported to the first functional layer 141 through the selected electrode. When the thickness D3 of the selected electrode is large, the hydrogen released from the second functional layer 210 and / or the third functional layer 220 needs to travel a long distance, which may affect the passivation effect of hydrogen on defects in the material of the first functional layer 141. On the other hand, the selected electrode can provide protection for the other film layers in the light-emitting structure layer 100 except for the selected electrode, preventing the materials of the other film layers in the light-emitting structure layer 100 from being degraded by the acidic atmosphere. When the thickness D3 of the selected electrode is small, the protective effect of the selected electrode on the other film layers in the light-emitting structure layer 100 is relatively weak, which reduces the lifespan of the light-emitting device 200. Therefore, by setting the above, the thickness D3 of the selected electrode can be kept within a suitable range. This ensures that the hydrogen element passivates the defects in the material of the first functional layer 141, while preventing the materials of other film layers in the light-emitting structure layer 100, except for the selected electrode, from being degraded by the acidic atmosphere, thereby further improving the lifespan of the light-emitting device 200.

[0284] Some embodiments of this disclosure also provide a method for fabricating a light-emitting device 200. As shown in Figures 13, 14 and 15, the method for fabricating the light-emitting device 200 includes steps S1 to S2.

[0285] S1: Forming a light-emitting structure layer 100. The light-emitting structure layer 100 includes an anode 110, a cathode 120, and at least one light-emitting unit 100U. The anode 110 and the cathode 120 are disposed opposite to each other. At least one light-emitting unit 100U is located between the anode 110 and the cathode 120; each light-emitting unit 100U includes a light-emitting layer 130 and a first functional layer 141, and the first functional layer 141 is closer to the cathode 120 than the light-emitting layer 130.

[0286] S2: Forming a second functional layer 210. The second functional layer 210 is located on one side of the light-emitting structure layer 100; the material of the second functional layer 210 includes the first metal element and hydrogen element.

[0287] For an understanding of the light-emitting structural layer 100, the first functional layer 141, the second functional layer 210, and the first metal element, please refer to the foregoing exemplary description of the light-emitting structural layer 100, the first functional layer 141, the second functional layer 210, and the first metal element, etc., which will not be repeated here.

[0288] The beneficial effects of the above-described method for preparing the light-emitting device 200 are the same as those of the light-emitting device 200 described in some of the above embodiments, and will not be repeated here.

[0289] In some examples, the light-emitting device 200 is a positively positioned light-emitting device. In this case, as shown in Figure 14, the light-emitting structure layer 100 (i.e., S1) may include R1 to R4. It should be noted that Figure 14 illustrates the fabrication process of a light-emitting device 200. In actual applications, other light-emitting devices 200 in the display panel 300 can also be formed during the fabrication of this light-emitting device 200. The same applies to Figure 15, which is described in detail below.

[0290] R1: An anode 110 is formed on a substrate 310.

[0291] For example, the process of forming the anode 110 can be a deposition process, a photolithography process, or a vapor deposition process, etc.

[0292] R2: A light-emitting layer 130 is formed on the side of the anode 110 away from the substrate 310.

[0293] For example, the process of forming the light-emitting layer 130 can be a spin coating process, a printing process (e.g., inkjet printing process), a printing process, or a photolithography process.

[0294] For example, the materials forming the light-emitting layer 130 include quantum dot light-emitting materials and photosensitive materials. In this case, the method for preparing the light-emitting layer 130 may include: coating the material forming the light-emitting layer 130, exposing the area where the target opening is located, and developing the material of the light-emitting layer 130 except for the exposed area. Here, the target opening refers to the opening among a plurality of openings that corresponds to the prepared light-emitting device 200.

[0295] Through the above exposure process, the quantum dot luminescent material and the photosensitive material can be cross-linked within the target opening (which can also be understood as the target pixel area), thus achieving selective patterning after development.

[0296] In some examples, R1A to R1B are included after R1 and before R2.

[0297] R1A: A hole injection layer 151 is formed on the side of the anode 110 away from the substrate 310.

[0298] For example, the process for forming the hole injection layer 151 can be a coating process (e.g., spin coating) or a vapor deposition process.

[0299] For examples of the material of the hole injection layer 151, please refer to the preceding section, which will not be repeated here.

[0300] R1B: A hole transport layer 152 is formed on the side of the hole injection layer 151 away from the anode 110.

[0301] For example, the process of forming the hole transport layer 152 can be a coating process (e.g., spin coating) or a vapor deposition process, etc.

[0302] For examples of the materials of the hole transport layer 152, please refer to the preceding sections, which will not be repeated here.

[0303] It should be understood that when the fabrication method of the light-emitting device 200 includes R1A to R1B, in R2, the light-emitting layer 130 is formed on the side of the hole transport layer 152 away from the hole injection layer 151.

[0304] R3: A first functional layer 141 is formed on the side of the light-emitting layer 130 away from the anode 110.

[0305] For example, the process of forming the first functional layer 141 can be a coating process (e.g., spin coating), a magnetron sputtering process, or a film formation process based on the sol-gel method.

[0306] R4: A cathode 120 is formed on the side of the first functional layer 141 away from the light-emitting layer 130.

[0307] For example, the process for forming the cathode 120 can be a deposition process or a vapor deposition process, etc.

[0308] In some other examples, the light-emitting device 200 is an inverted light-emitting device. In this case, as shown in Figure 15, the light-emitting structure layer 100 (i.e., S1) may include N1 to N4.

[0309] N1: A cathode 120 is formed on a substrate 310.

[0310] For example, the process of forming the cathode 120 can be a deposition process, a photolithography process, or a vapor deposition process, etc.

[0311] N2: A first functional layer 141 is formed on the side of the cathode 120 away from the substrate 310.

[0312] N3: A light-emitting layer 130 is formed on the side of the first functional layer 141 away from the cathode 120.

[0313] N4: An anode 110 is formed on the side of the light-emitting layer 130 away from the first functional layer 141.

[0314] For example, the process for forming the anode 110 can be a deposition process or a vapor deposition process, etc.

[0315] In some examples, N3A and N3B are included after N3 and before N4.

[0316] N3A: A hole transport layer 152 is formed on the side of the light-emitting layer 130 away from the first functional layer 141.

[0317] N3B: A hole injection layer 151 is formed on the side of the hole transport layer 152 away from the light-emitting layer 130.

[0318] For an understanding of N2, N3, N3A, and N3B, please refer to the aforementioned description of R3, R2, R1B, and R1A, which will not be repeated here.

[0319] In some embodiments, forming a second functional layer 210 (i.e., S2) includes depositing material on one side of the light-emitting structure layer 100 in a hydrogen-containing gas atmosphere using a vapor deposition process, a deposition process, or a plasma treatment process to form the second functional layer 210.

[0320] For example, the hydrogen-containing gas may include at least one of hydrogen and ammonia.

[0321] With the above configuration, hydrogen-containing gas can serve as a hydrogen source, reacting with the first metal element during the deposition process to form a metal hydride. This allows the second functional layer 210 to include the metal hydride, thereby enabling the second functional layer to passivate defects in the material of the first functional layer 141. Furthermore, the inclusion of a metal hydride in the second functional layer 210 strengthens the bond between the first metal element and the hydrogen element, allowing for the continuous release of hydrogen.

[0322] In some embodiments, following the second functional layer 210 (i.e., S2), as shown in Figures 14 and 15, the preparation method further includes S3.

[0323] S3: A third functional layer 220 is formed on the side of the second functional layer 210 away from the first functional layer 141. The material of the third functional layer 220 includes a matrix material and hydrogen; the matrix material includes non-metallic elements.

[0324] For example, forming a third functional layer 220 (i.e., S3) on the side of the second functional layer 210 away from the first functional layer 141 includes: growing the third functional layer 220 on the second functional layer 210 in a hydrogen-rich gas atmosphere using a material (e.g., silicon nitride) to form the third functional layer 220.

[0325] When the fabrication method includes S3, the light-emitting device 200 includes a third functional layer 220. As mentioned above, firstly, the third functional layer 220 can release hydrogen elements to the first functional layer 141 of the light-emitting structural layer 100, passivating defects in the material of the first functional layer 141. Secondly, the third functional layer 220 can release hydrogen elements in the early stages of operation of the light-emitting device 200, which can improve the stability of the performance of the light-emitting device 200. Thirdly, it can accelerate the positive aging process of the light-emitting device 200, thereby improving the performance, stability, and lifespan of the light-emitting device 200, and reducing the power consumption of the light-emitting device 200.

[0326] The technical solutions provided in this disclosure will be described in detail and by way of the following experimental examples and comparative examples.

[0327]

Example 1

[0328] The following embodiment fabricates a light-emitting panel, which includes a light-emitting device 200. The light-emitting device 200 is a positively positioned bottom-emitting light-emitting device, and its structure is shown in Figure 16. The fabrication method includes M1 to M9.

[0329] M1: A transparent ITO material is deposited on a substrate 310 (material is glass) to form the anode 110.

[0330] M2: A hole injection layer 151 is formed on the side of the anode 110 away from the substrate 310.

[0331] For example, an organic hole injection material PEDOT:PSS can be spin-coated on the side of the anode 110 away from the substrate 310 to form a hole injection layer 151.

[0332] For example, an inorganic oxide material MoOx can be vapor-deposited on the side of the anode 110 away from the substrate 310 to form a hole injection layer 151.

[0333] M3: A hole transport layer 152 is formed on the side of the hole injection layer 151 away from the anode 110.

[0334] For example, an organic hole transport material TFB or PF8Cz can be spin-coated on the side of the hole injection layer 151 away from the anode 110 to form the hole transport layer 152.

[0335] For example, an inorganic oxide material NiOx or VOx can be vapor-deposited on the side of the hole injection layer 151 away from the anode 110 to form a hole transport layer 152.

[0336] M4: A solution containing green quantum dot material is spin-coated on the side of the hole transport layer 152 away from the hole injection layer 151 to form a light-emitting layer 130. The material of the light-emitting layer 130 includes cadmium-based quantum dot material or indium phosphide quantum dot material.

[0337] M5: A first functional layer 141 is formed on the side of the light-emitting layer 130 away from the hole transport layer 152, and the thickness of the first functional layer 141 is in the range of 20nm to 40nm.

[0338] For example, a solution containing zinc oxide nanoparticles or magnesium zinc oxide nanoparticles can be spin-coated on the side of the light-emitting layer 130 away from the hole transport layer 152 to form the first functional layer 141.

[0339] For example, a magnetron sputtering process can be used to form a first functional layer 141 on the side of the light-emitting layer 130 away from the hole transport layer 152, and the material of the first functional layer 141 includes a metal oxide material.

[0340] M6: Aluminum is vapor-deposited on the side of the first functional layer 141 away from the light-emitting layer 130 to form a cathode 120, the thickness of which is in the range of 60nm to 100nm.

[0341] M7: Under a hydrogen-rich gas atmosphere, an Al / Ni alloy is vapor-deposited on the side of the cathode 120 away from the first functional layer 141 to form a second functional layer 210. In the second functional layer 210, the mass ratio of the Al / Ni alloy is in the range of 3:100 to 15:100; the thickness of the second functional layer 210 is in the range of 20 nm to 80 nm.

[0342] M8: Under a hydrogen-rich gas atmosphere, a silicon nitride thin film is grown on the side of the second functional layer 210 away from the cathode 120 using a deposition process to form the third functional layer 220. The thickness of the third functional layer 220 is in the range of 200 nm to 1000 nm.

[0343] M9: The light-emitting device 200 is encapsulated using epoxy encapsulant and a drying sheet.

[0344] In this embodiment, after completing the above preparation steps, the mass percentage and volume percentage of hydrogen in the material of the second functional layer 210 were measured. The mass percentage of hydrogen was in the range of 5% to 10%, and the volume percentage was in the range of 10%. 18 cm -3 ~10 28 cm -3 The range.

[0345] In this embodiment, the device performance of the light-emitting device 200 was also tested. The current of the light-emitting device 200 under a constant operating voltage was tested as a function of time, and the results are shown in Figure 17. The brightness of the light-emitting device 200 was also tested as a function of time (which can also be understood as a lifetime decay curve), and the results are shown in Figure 18. The luminous morphology of the light-emitting panel after a certain operating time was also tested, and the results are shown in Figure 19. In Figure 19, the luminous morphology of the light-emitting device decays to 85% of its initial state. It should be noted that the horizontal axis in Figures 17 and 18 is the normalized time, the vertical axis in Figure 17 is the normalized current, and the vertical axis in Figure 18 is the normalized brightness.

[0346] Comparative Example 1

[0347] The following comparative example shows the fabrication of a contrast-emitting panel, which includes a contrast-emitting device D-200, the structure of which is shown in Figure 20.

[0348] The preparation method of the light-emitting panel is similar to that of the light-emitting panel in Example 1, except that M7 is not included and M8 is replaced with M8'.

[0349] M8': Under a hydrogen-rich gas atmosphere, silicon nitride is grown on the side of the cathode 120 away from the first functional layer 141 using a deposition process to form a third functional layer 220. The thickness of the third functional layer 220 is in the range of 200 nm to 1000 nm.

[0350] In this comparative example, the device performance of the comparative light-emitting device D-200 was tested. The current of the comparative light-emitting device D-200 under constant operating voltage was tested as a function of time, and the results are shown in Figure 17. The brightness of the comparative light-emitting device D-200 was also tested as a function of time, and the results are shown in Figure 18. The luminous morphology of the comparative light-emitting panel after a certain operating time was also tested, and the results are shown in Figure 21. In Figure 21, the luminous morphology of the comparative light-emitting device D-200 decayed to 60% of its initial state.

[0351] As shown in Figure 17, compared with the comparative light-emitting device D-200 in Comparative Example 1, the current of the light-emitting device 200 in Example 1 changes less over time under a constant operating voltage, and the attenuation is smaller. This indicates that as the operating time increases, the current of the light-emitting device 200 in Example 1 can be stabilized in a higher range, which can delay the aging of the light-emitting device 200.

[0352] As shown in Figure 18, compared with the comparative light-emitting device D-200 in Comparative Example 1, the brightness of the light-emitting device 200 in Example 1 changes less over time and the decay is smaller. This indicates that as the working time increases, the brightness of the light-emitting device 200 in Example 1 can remain stable in a higher range. This also indicates that the lifespan of the light-emitting device 200 in Example 1 is less affected and can delay the aging of the light-emitting device 200.

[0353] As shown in Figures 19 and 21, compared with the comparative light-emitting device D-200 in Comparative Example 1, the light-emitting device 200 in Example 1 has a relatively better light-emitting morphology, exhibiting higher brightness and better light-emitting uniformity. This indicates that the light-emitting morphology of the light-emitting device 200 in Example 1 can be well maintained as the working time increases.

[0354]

Example 2

[0355] The following embodiments demonstrate the fabrication of a light-emitting panel, which includes a light-emitting device 200. The light-emitting device 200 is an inverted bottom-emitting light-emitting device, and its structure is the same as that of the light-emitting device 200 shown in Figure 12. The fabrication method includes P1 to P9.

[0356] P1: A transparent ITO material is deposited on a substrate 310 (material is glass) to form a cathode 120.

[0357] P2: A first functional layer 141 is formed on the side of the cathode 120 away from the substrate 310, and the thickness of the first functional layer 141 is in the range of 20nm to 40nm.

[0358] For example, a sol-gel-based film formation process can be used to form a zinc oxide thin film or a magnesium zinc oxide thin film on the side of the cathode 120 away from the glass substrate 310 to form the first functional layer 141.

[0359] For example, a magnetron sputtering process can be used to form a first functional layer 141 on the side of the light-emitting layer 130 away from the hole transport layer 152, and the material of the first functional layer 141 includes a metal oxide material.

[0360] P3: Spin-coat a cadmium-based quantum dot material or an indium-phosphorus quantum dot material onto the side of the first functional layer 141 away from the cathode 120 to form a light-emitting layer 130.

[0361] P4: An organic small molecule material TCTA or CBP is vapor-deposited on the side of the light-emitting layer 130 away from the first functional layer 141 to form a hole transport layer 152, the thickness of which is in the range of 20nm to 40nm.

[0362] P5: MoO is deposited on the side of the hole transport layer 152 away from the light-emitting layer 130 to form a hole injection layer 151, the thickness of which is in the range of 0.5nm to 2nm.

[0363] P6: Aluminum is vapor-deposited on the side of the hole injection layer 151 away from the hole transport layer 152 to form an anode 110, the thickness of which is in the range of 60nm to 100nm.

[0364] P7: Under a hydrogen-rich gas atmosphere, an Al / Ni alloy is vapor-deposited on the side of the anode 110 away from the hole injection layer 151 to form a second functional layer 210. In the second functional layer 210, the mass ratio of the Al / Ni alloy is in the range of 3:100 to 15:100; the thickness of the second functional layer 210 is in the range of 15 nm to 60 nm.

[0365] P8: Under a hydrogen-rich gas atmosphere, a silicon nitride thin film is grown on the side of the second functional layer 210 away from the anode 110 using a deposition process to form the third functional layer 220. The thickness of the third functional layer 220 is in the range of 60 nm to 200 nm.

[0366] P9: The light-emitting device 200 is encapsulated using epoxy encapsulant and a drying sheet.

[0367]

Example 3

[0368] The following embodiments demonstrate the fabrication of a light-emitting panel, which includes a light-emitting device 200. The light-emitting device 200 is an inverted top-emitting light-emitting device, and its structure is the same as that of the light-emitting device 200 shown in Figure 12. The fabrication method includes G1 to G8.

[0369] G1: Deposit silver material for cathode 120 on substrate 310 (material is glass) to form cathode 120.

[0370] G2: A first functional layer 141 is formed on the side of the cathode 120 away from the substrate 310, and the thickness of the first functional layer 141 is in the range of 20nm to 40nm.

[0371] For example, a solution containing zinc oxide nanoparticles or magnesium zinc oxide nanoparticles can be spin-coated on the side of the cathode 120 away from the substrate 310 to form a first functional layer 141.

[0372] For example, a magnetron sputtering process can be used to form a first functional layer 141 on the side of the cathode 120 away from the substrate 310, and the material of the first functional layer 141 includes a metal oxide material.

[0373] G3: A solution containing cadmium-based quantum dot material or indium phosphide quantum dot material is spin-coated on the side of the first functional layer 141 away from the cathode 120 to form the light-emitting layer 130.

[0374] G4: An organic small molecule material TCTA or CBP is vapor-deposited on the side of the light-emitting layer 130 away from the first functional layer 141 to form a hole transport layer 152, the thickness of which is in the range of 20nm to 40nm.

[0375] G5: MoO is vapor-deposited on the side of the hole transport layer 152 away from the light-emitting layer 130 to form a hole injection layer 151, the thickness of which is in the range of 0.5nm to 2nm.

[0376] G6: A Mg / Ag / Ni ternary alloy (Mg, Ag, Ni mass ratio of 20:80:5 to 20:80:10) is vapor-deposited on the side of the hole injection layer 151 away from the hole transport layer 152 to form a second functional layer 210, which is reused as an anode 110, and the thickness of the second functional layer 210 is in the range of 20nm to 80nm.

[0377] G7: Under a hydrogen-rich gas atmosphere, a silicon nitride thin film is grown on the side of the second functional layer 210 away from the hole injection layer 151 using a deposition process to form the third functional layer 220. The thickness of the third functional layer 220 is in the range of 60 nm to 200 nm.

[0378] G8: The light-emitting device 200 is encapsulated using epoxy encapsulant and a drying sheet.

[0379]

Example 4

[0380] The following embodiment fabricates a light-emitting panel including a pixel defining layer 321 (see Figure 2). The light-emitting panel includes a light-emitting device 200, which is a top-mounted light-emitting device, and its structure is shown in Figure 16. The fabrication method includes H1 to H10.

[0381] H1: A pixel defining layer 321 is formed on a substrate 310 (material is glass). The pixel defining layer 321 includes a plurality of pixel openings Q (see Figure 2).

[0382] H2: Deposit silver material of anode 110 on substrate 310 within pixel opening Q to form anode 110.

[0383] H3: An organic small molecule material HAT-CN, or an inorganic metal oxide MoO or NiO, is vapor-deposited on the side of the anode 110 away from the substrate 310 to form a hole injection layer 151, the thickness of which is in the range of 1 nm to 10 nm.

[0384] H4: A hole transport layer 152 is formed on the side of the hole injection layer 151 away from the anode 110. The material of the hole transport layer 152 includes polymer materials TFB or PF8Cz, and the thickness of the hole transport layer 152 is in the range of 20nm to 50nm.

[0385] H5: Using photolithography, a patterned light-emitting layer 130 is formed on the side of the hole transport layer 152 away from the hole injection layer 151. The thickness of the light-emitting layer 130 is in the range of 15nm to 40nm.

[0386] H6: A first functional layer 141 is formed on the side of the light-emitting layer 130 away from the hole transport layer 152, and the thickness of the first functional layer 141 is in the range of 20nm to 40nm.

[0387] For example, a solution containing zinc oxide nanoparticles or magnesium zinc oxide nanoparticles can be spin-coated on the side of the light-emitting layer 130 away from the hole transport layer 152 to form a first functional layer 141.

[0388] For example, a magnetron sputtering process can be used to form a first functional layer 141 on the side of the light-emitting layer 130 away from the hole transport layer 152, and the material of the first functional layer 141 includes a metal oxide material.

[0389] H7: A Mg / Ag alloy (Mg to Ag mass ratio of 1:4) is vapor-deposited on the side of the first functional layer 141 away from the light-emitting layer 130 to form a cathode 120, the thickness of which is in the range of 20nm to 100nm.

[0390] H8: Under a hydrogen-rich gas atmosphere, a Mg / Ag / Ni alloy is vapor-deposited on the side of the cathode 120 away from the first functional layer 141 to form a second functional layer 210. In the second functional layer 210, the mass ratio of the Mg / Ag / Ni alloy is in the range of 1:4:0.2 to 1:4:1; the thickness of the second functional layer 210 is in the range of 20 nm to 80 nm.

[0391] H9: Under a hydrogen-rich gas atmosphere, a silicon nitride thin film is grown on the side of the second functional layer 210 away from the cathode 120 using a deposition process to form the third functional layer 220. The thickness of the third functional layer 220 is in the range of 200 nm to 600 nm.

[0392] H10: The light-emitting device 200 is encapsulated using epoxy encapsulant and a drying sheet.

[0393]

Example 5

[0394] The following embodiments demonstrate the fabrication of a light-emitting panel, which includes a light-emitting device 200. The light-emitting device 200 is a positively positioned stacked light-emitting device, and its structure is shown in Figure 22. The fabrication method includes L1 to L14.

[0395] L1: A transparent ITO material is deposited on a substrate 310 (material is glass) to form the anode 110.

[0396] L2: A hole injection layer 151A is formed on the side of the anode 110 away from the substrate 310.

[0397] For example, an organic hole injection material PEDOT:PSS can be spin-coated on the side of the anode 110 away from the substrate 310 to form a hole injection layer 151A.

[0398] For example, an inorganic oxide material MoOx can be vapor-deposited on the side of the anode 110 away from the substrate 310 to form a hole injection layer 151A.

[0399] L3: A hole transport layer 152A is formed on the side of the hole injection layer 151A away from the anode 110.

[0400] For example, an organic hole transport material TFB or PF8Cz can be spin-coated on the side of the hole injection layer 151A away from the anode 110 to form the hole transport layer 152A.

[0401] For example, an inorganic oxide material NiOx or VOx can be vapor-deposited on the side of the hole injection layer 151A away from the anode 110 to form a hole transport layer 152A.

[0402] L4: A solution containing cadmium-based quantum dot material or indium phosphide quantum dot material is spin-coated on the side of hole transport layer 152A away from hole injection layer 151A to form light-emitting layer 130A.

[0403] L5: A first functional layer 141A is formed on the side of the light-emitting layer 130A away from the hole transport layer 152A, and the thickness of the first functional layer 141A is in the range of 20nm to 40nm.

[0404] For example, a solution containing zinc oxide nanoparticles or magnesium zinc oxide nanoparticles can be spin-coated on the side of the light-emitting layer 130A away from the hole transport layer 152A to form the first functional layer 141A.

[0405] For example, a magnetron sputtering process can be used to form a first functional layer 141A on the side of the light-emitting layer 130A away from the hole transport layer 152A, and the material of the first functional layer 141A includes a metal oxide material.

[0406] L6: IZO is vapor-deposited on the side of the first functional layer 141A away from the light-emitting layer 130A to form a charge generation layer 160, the thickness of which is in the range of 1nm to 5nm.

[0407] L7: An inorganic oxide MoOx is vapor-deposited on the side of the charge generation layer 160 away from the first functional layer 141A to form a hole injection layer 151B.

[0408] L8: An organic material TCTA or CBP is vapor-deposited on the side of the hole injection layer 151B away from the charge generation layer 160 to form a hole transport layer 152B, the thickness of which is in the range of 15nm to 40nm.

[0409] L9: A light-emitting layer 130B is formed on the side of the hole transport layer 152B away from the hole injection layer 151B, and the thickness of the light-emitting layer 130B is in the range of 15nm to 40nm.

[0410] L10: A first functional layer 141B is formed on the side of the light-emitting layer 130B away from the hole transport layer 152B, and the thickness of the first functional layer 141B is in the range of 20nm to 40nm.

[0411] For example, a solution containing zinc oxide nanoparticles or magnesium zinc oxide nanoparticles can be spin-coated on the side of the light-emitting layer 130B away from the hole transport layer 152B to form the first functional layer 141B.

[0412] For example, a magnetron sputtering process can be used to form a first functional layer 141B on the side of the light-emitting layer 130A away from the hole transport layer 152B, and the material of the first functional layer 141B includes a metal oxide material.

[0413] L11: Aluminum is vapor-deposited on the side of the first functional layer 141B away from the light-emitting layer 130B to form a cathode 120, the thickness of which is in the range of 60nm to 100nm.

[0414] L12: Under a hydrogen-rich gas atmosphere, an Al / Ni alloy is vapor-deposited on the side of the cathode 120 away from the first functional layer 141B to form a second functional layer 210. In the second functional layer 210, the mass ratio of the Al / Ni alloy is in the range of 5:100 to 20:100; the thickness of the second functional layer 210 is in the range of 30 nm to 100 nm.

[0415] L13: Under a hydrogen-rich gas atmosphere, a silicon nitride thin film is grown on the side of the second functional layer 210 away from the cathode 120 using a deposition process to form the third functional layer 220. The thickness of the third functional layer 220 is in the range of 200 nm to 1000 nm.

[0416] L14: The light-emitting device 200 is encapsulated using epoxy encapsulant and a drying sheet.

[0417] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A light emitting device, comprising: a light emitting structure layer; the light emitting structure layer comprises: oppositely arranged anode and cathode; at least one light emitting unit between the anode and the cathode; each of the light emitting units comprises a light emitting layer and a first functional layer, and the first functional layer is closer to the cathode than the light emitting layer; a second functional layer on one side of the light emitting structure layer; the material of the second functional layer comprises a first metal element and a hydrogen element.

2. The light-emitting device according to claim 1, wherein In the second functional layer, the first metal element and the hydrogen element are connected by a chemical bond.

3. The light emitting device according to claim 1 or 2, wherein The first metal element comprises at least one of a group IIA metal element, a lanthanide series metal element, and a group IVB metal element; and / or, The first metal element comprises a group IIIA metal element and a group VIII metal element.

4. The light-emitting device according to claim 3, wherein The first metal element comprises a group IIIA metal element and a group VIII metal element, and the mass ratio of the group IIIA metal element to the group VIII metal element ranges from 3:100 to 20:

100.

5. The light-emitting device according to any one of claims 1 to 4, wherein The second functional layer is multiplexed as one of the anode and the cathode closer to the second functional layer.

6. The light-emitting device according to any one of claims 1 to 4, wherein In the anode and the cathode, the material of the one closer to the second functional layer comprises a second metal element, and at least part of the elements in the first metal element are of the same element type as the second metal element.

7. The light-emitting device according to any one of claims 1 to 6, wherein The second functional layer comprises at least two functional subparts arranged along a first direction, the first direction being the direction in which the anode and the cathode are oppositely arranged. In any two adjacent functional subparts, the concentration of hydrogen elements in the functional subpart closer to the first functional layer is less than the concentration of hydrogen elements in the functional subpart farther from the first functional layer.

8. The light-emitting device according to any one of claims 1 to 7, wherein The second functional layer comprises at least two functional sublayers arranged along a first direction, the first direction being the direction in which the anode and the cathode are oppositely arranged. The at least two functional sublayers comprise a first functional sublayer and a second functional sublayer, the first functional sublayer being closer to the first functional layer than the second functional sublayer; the first metal element included in the first functional sublayer is different from the first metal element included in the second functional sublayer. The binding strength between the first metal element and the hydrogen element included in the first functional sublayer is greater than the binding strength between the first metal element and the hydrogen element included in the second functional sublayer.

9. The light-emitting device according to any one of claims 1 to 8, wherein Under a first preset condition, the mass percentage of the hydrogen element in the material of the second functional layer ranges from 5% to 10%.

10. The light-emitting device according to any one of claims 1 to 9, wherein In the second preset condition, the volume ratio of hydrogen in the material of the second functional layer is 10 18 cm -3 ~ 10 28 cm -3 .

11. The light-emitting device according to any one of claims 1 to 10, wherein The thickness of the second functional layer ranges from 15 nm to 100 nm.

12. The light-emitting device according to any one of claims 1 to 11, wherein The light emitting device further comprises: a third functional layer on the side of the second functional layer away from the first functional layer; the material of the third functional layer comprises a base material and a hydrogen element; and the base material comprises a non-metallic element.

13. The light-emitting device according to claim 12, wherein The base material comprises at least one of silicon nitride, silicon oxynitride, and silicon oxide; and / or, The base material comprises a porous material; the porous material comprises at least one of a metal organic framework material, a nanoporous material, and an organic molecular cage; and / or, The base material comprises an insulating polymer material.

14. The light-emitting device according to claim 12 or 13, wherein The porosity of the porous material is greater than or equal to 0.01%.

15. The light-emitting device according to any one of claims 12 to 14, wherein The surface of the porous material has active sites with an area density in the range of 1 x 10 11 cm -2 ~ 5 x 10 12 cm -2 .

16. The light-emitting device according to any one of claims 12 to 15, wherein The third functional layer has a thickness ranging from 60 nm to 1000 nm.

17. The light-emitting device according to any one of claims 12 to 16, wherein The light-emitting unit further comprises: A fourth functional layer between the anode and the light-emitting layer, the fourth functional layer being used at least for transmitting holes; the material of the fourth functional layer comprising an organic material; The cathode is closer to the second functional layer than the anode, and the third functional layer has a thickness ranging from 200 nm to 1000 nm; or The anode is closer to the second functional layer than the cathode, and the third functional layer has a thickness ranging from 60 nm to 200 nm.

18. The light-emitting device according to any one of claims 1 to 17, wherein The material of the first functional layer comprises a metal oxide material, and the first functional layer has a thickness ranging from 20 nm to 40 nm.

19. The light-emitting device according to any one of claims 1 to 18, wherein The thickness of the layer closer to the second functional layer between the anode and the cathode ranges from 20 nm to 100 nm.

20. The light-emitting device according to any one of claims 1 to 19, wherein The at least one light-emitting unit comprises: at least two light-emitting units arranged along a first direction, the first direction being a direction in which the anode and the cathode are arranged oppositely; The light-emitting structure layer further comprises: a charge generation layer between any two adjacent light-emitting units.

21. A display panel, comprising: A plurality of light-emitting devices arranged along a second direction, the second direction intersecting a direction in which the anode and the cathode are arranged oppositely; The light-emitting device is as claimed in any one of claims 1 to 20; An encapsulation layer covering the plurality of light-emitting devices.

22. The display panel of claim 21, wherein, The material of the encapsulation layer comprises a neutral encapsulation glue.

23. The display panel of claim 21 or 22, wherein, The second functional layers of the plurality of light-emitting devices are connected; and / or The light-emitting device comprises a third functional layer, the third functional layer being on a side of the second functional layer away from the first functional layer; the material of the third functional layer comprising a base material and a hydrogen element; the base material comprising a non-metallic element; and the third functional layers of the plurality of light-emitting devices are connected.

24. A method for manufacturing a light-emitting device, comprising: forming a light-emitting structure layer; The light-emitting structure layer comprises an anode, a cathode and at least one light-emitting unit; The anode and the cathode are arranged oppositely; The at least one light-emitting unit is between the anode and the cathode; each light-emitting unit comprises a light-emitting layer and a first functional layer, and the first functional layer is closer to the cathode than the light-emitting layer; forming a second functional layer; the second functional layer is on a side of the light-emitting structure layer; and the material of the second functional layer comprises a first metal element and a hydrogen element.

25. The method of producing a light emitting device according to Claim 24, wherein The forming of the second functional layer comprises: depositing a material on a side of the light-emitting structure layer by using an evaporation process, a deposition process or a plasma treatment process in a hydrogen-containing gas atmosphere to form the second functional layer.

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