Roughness optimization method and apparatus
WO2026137634A1PCT designated stage Publication Date: 2026-07-02SHANGHAI CHUANXIN SEMICON CO LTD
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- SHANGHAI CHUANXIN SEMICON CO LTD
- Filing Date
- 2025-04-02
- Publication Date
- 2026-07-02
AI Technical Summary
Technical Problem
Existing technologies are unable to effectively reduce the edge roughness of the mask's light-shielding layer, leading to a decrease in wafer imaging accuracy and affecting device performance.
Method used
By depositing and etching light-shielding materials on the sidewalls of the mask light-shielding layer, the conformal growth characteristics of atomic layer deposition and etching are utilized to gradually fill pits and remove protrusions, thereby reducing the roughness of the sidewalls of the light-shielding layer.
Benefits of technology
It effectively reduces the roughness of the sidewalls of the mask's light-shielding layer, improves wafer imaging accuracy, and meets the requirements of high-precision chip manufacturing.
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Smart Images
Figure CN2025086757_02072026_PF_FP_ABST
Abstract
A roughness optimization method and apparatus. The method comprises the following steps: providing a mask, and depositing a protective layer on the mask, such that the protective layer covers a light-transmitting region of the mask; depositing a first preset thickness of light-shielding material on a side wall of a light-shielding layer of the mask by means of atomic layer deposition, so as to at least partially fill pits on the side wall of the light-shielding layer and reduce the roughness of the side wall of the light-shielding layer; etching a second preset thickness of light-shielding material from the side wall of the light-shielding layer of the mask by means of atomic layer etching, so as to at least partially remove protrusions on the light-shielding layer and reduce the roughness of the side wall of the light-shielding layer; measuring the roughness of a surface of a light-shielding pattern, and comparing the measured roughness with a preset roughness set value; and when the measured roughness of the surface of the light-shielding pattern reaches the roughness set value, removing the protective layer. The present invention can effectively reduce the line edge roughness of a mask.
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