Semiconductor apparatus
By using a liquid spraying device in semiconductor equipment to form a liquid film covering the drain outlet, the problem of backflow of volatile processing liquid waste gas is solved, achieving anti-contamination of the substrate and improved stability of the processing liquid.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- ACM RES (SHANGHAI) INC
- Filing Date
- 2025-10-23
- Publication Date
- 2026-07-02
Smart Images
Figure CN2025129573_02072026_PF_FP_ABST
Abstract
Description
Semiconductor equipment Technical Field
[0001] This application relates to the field of semiconductor manufacturing, and more specifically, to a semiconductor device. Background Technology
[0002] In semiconductor manufacturing, substrate cleaning is a routine step. The substrate cleaning process typically involves spraying various treatment solutions onto a substrate rotating on a substrate stage using nozzles within a chamber, in order to remove impurities and contaminants from the substrate surface. During the substrate cleaning process, the treatment solutions are continuously discharged from the chamber's drain port.
[0003] However, the substrate cleaning process uses various processing solutions, some of which are volatile (e.g., DHF processing solution, a mixture of hydrofluoric acid and deionized water). During the process, the continuous discharge of these solutions, influenced by their volatility and the time-sensitive nature of the discharge, can cause them to evaporate and generate waste gas in the drainage channel. This waste gas can overflow from the drain port into the cavity, potentially contaminating the substrate, affecting product yield, and in severe cases, rendering the substrate unusable. Summary of the Invention
[0004] The purpose of this application is to provide a semiconductor device to solve the problem of waste gas contaminating the substrate when it is recirculated into the cavity.
[0005] To achieve the above objectives, according to one embodiment of this application, a semiconductor device is proposed, comprising:
[0006] The cavity has a drain port;
[0007] The substrate stage, located inside the cavity, is used to support the substrate;
[0008] A driving device, located below the substrate stage, is used to drive the substrate stage to rotate.
[0009] The liquid spraying device is configured to spray out liquid and form a liquid film covering the drain outlet.
[0010] In some embodiments, the spraying device is configured to spray liquid onto the lower surface of the substrate stage as the substrate stage rotates to form a liquid film.
[0011] In some embodiments, the spraying device includes a plurality of nozzles, which are uniformly distributed along the circumference of the substrate stage.
[0012] In some embodiments, the spraying device is further configured to spray liquid onto the lower surface of the substrate stage in the direction of rotation of the substrate stage.
[0013] In some embodiments, the spraying device further includes a flow regulating device for regulating the flow rate of the spraying device to adjust the coverage area of the liquid film.
[0014] In some embodiments, an exhaust gas concentration detection sensor is also included for detecting the exhaust gas concentration within the cavity;
[0015] The flow regulating device is also used to adjust the flow rate of the spraying device based on the detection results of the exhaust gas concentration detection sensor.
[0016] In some embodiments, the liquid sprayed by the spraying device is deionized water.
[0017] In some embodiments, the semiconductor device further includes a drain section, which includes a drain channel, a switching valve, and a check valve. The switching valve and the check valve are disposed on the drain channel, and the drain channel is connected to a drain port.
[0018] The semiconductor device proposed in this application has at least the following effects:
[0019] (1) Liquid is sprayed using a spraying device to form a liquid film covering the drain port, which can dissolve the waste gas overflowing through the drain port, thereby sealing the drain port. Moreover, the liquid containing the waste gas is discharged from the drain channel along with the treatment liquid. Therefore, the liquid film can effectively block the waste gas flowing back into the cavity from the drain port, preventing the waste gas from contaminating the substrate.
[0020] (2) The liquid is sprayed onto the lower surface of the substrate stage using a spraying device, and the liquid is rotated by the substrate stage to form a liquid film below the substrate stage. The liquid film is located near the edge of the substrate, which can effectively prevent the exhaust gas from contaminating the edge of the substrate.
[0021] (3) The liquid sprayed by the spraying device mixes with the treatment liquid in the discharge, which dilutes the treatment liquid and can effectively suppress the volatilization of the treatment liquid.
[0022] Overview of the attached figures
[0023] The above and other features, properties and advantages of this application will become more apparent from the following description taken in conjunction with the accompanying drawings and embodiments, in which the same reference numerals always denote the same features, wherein:
[0024] Figure 1 is a schematic diagram of a semiconductor device provided in an embodiment of this application;
[0025] Figure 2 is a schematic diagram of a liquid spraying device for a semiconductor device according to an embodiment of this application, including an umbrella-shaped cap;
[0026] Figure 3 is a schematic diagram of a semiconductor device according to an embodiment of this application spraying liquid onto the lower surface of a rotating substrate stage to form a liquid film.
[0027] Figure 4 is a schematic diagram of the liquid film formed by the semiconductor device provided in an embodiment of this application reaching the bottom of the cavity;
[0028] Figure 5 is a schematic diagram of a liquid spraying device for a semiconductor device provided in an embodiment of this application spraying liquid along the rotation direction of the substrate stage;
[0029] Figure 6 is a schematic diagram of a partial structure of a semiconductor device provided in an embodiment of this application; and
[0030] Figure 7 is a schematic diagram of a partial structure of a semiconductor device with an exhaust gas concentration detection sensor provided in an embodiment of this application.
[0031] Preferred embodiments of this application
[0032] The following specific embodiments illustrate the embodiments of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. Although the description of this application is presented in conjunction with preferred embodiments, this does not mean that the features of this invention are limited to those embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of this application. To provide a thorough understanding of this application, many specific details will be included in the following description. This application may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of this application, some specific details will be omitted in the description. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this application can be combined with each other.
[0033] It should be noted that in this specification, similar reference numerals and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. The technical solutions of this application will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.
[0034] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.
[0035] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.
[0036] Figure 1 is a schematic diagram of a semiconductor device provided in an embodiment of this application. As shown in Figure 1, the semiconductor device includes a cavity 100, a substrate stage 200, a driving device 400, and a process nozzle 600. The cavity 100 has a drain port 110. In the example shown in Figure 1, the drain port 110 is located at the bottom of the cavity 100. The substrate stage 200 is located inside the cavity 100 and is used to support a substrate 210. The driving device 400 is located below the substrate stage 200 and is used to drive the substrate stage 200 to rotate. The process nozzle 600 is located above the substrate stage 200 and is used to spray a processing liquid onto the substrate 210.
[0037] In some embodiments, referring to FIG1, the semiconductor device further includes a drain section 500, which includes a drain channel 510, a switching valve 520, and a check valve 530. The switching valve 520 and the check valve 530 are disposed on the drain channel 510, which communicates with a drain port 110 for draining liquid from the cavity 100. The switching valve 520 controls the opening and closing of the drain channel 510. When the switching valve 520 is open, liquid in the cavity 100 can be drained from the drain port 110. The check valve 530 prevents liquid in the drain channel 510 from flowing back into the cavity 100.
[0038] The semiconductor device proposed in this application also includes a liquid spraying device 300, which is configured to spray liquid and form a liquid film covering the drain port 110. After the processing liquid in the drain channel 510 evaporates, it generates waste gas. Due to the negative pressure state inside the cavity 100, the waste gas overflows back into the cavity 100 from the drain port 110. Upon contact with the liquid film, the waste gas overflowing back into the cavity 100 from the drain port 110 dissolves in the liquid film and is discharged from the drain port 110 along with the processing liquid, thereby preventing the waste gas from contaminating the substrate 210.
[0039] In some embodiments, as shown in FIG1, the spraying device 300 sprays liquid into the air. The sprayed liquid forms a liquid film after falling through the air, covering the drain port 110. In some embodiments, the liquid film forms a closed space with the inner bottom wall of the cavity 100, and the drain port 110 communicates with this closed space. In some embodiments, the liquid film, together with the inner bottom wall and the inner sidewall of the cavity 100, forms a closed space, and the drain port 110 communicates with this closed space. In the example shown in FIG1, the spraying device 300 is positioned at the bottom of the cavity 100 near the drain port 110, so that the liquid film sprayed by the spraying device 300 can effectively cover the drain port 110.
[0040] In some embodiments, as shown in FIG2, the liquid spraying device 300 includes a spray pipe 320 and an umbrella-shaped cap 350. The umbrella-shaped cap 350 is conical and fixedly connected to the spray pipe 320. The spray pipe 320 and the umbrella-shaped cap 350 are concentrically arranged, and one end of the spray pipe 320 spraying liquid enters the umbrella-shaped cap 350. After the liquid sprayed from the spray pipe 320 reaches the umbrella-shaped cap 350, it flows down along the inner wall of the umbrella-shaped cap 350 to form an umbrella-shaped liquid film, which covers the drain port 110.
[0041] In some embodiments, as shown in FIG3, the spraying device 300 is configured to spray liquid onto the lower surface of the substrate stage 200 when the substrate stage 200 rotates to form a liquid film that covers the drain port 110. In some embodiments, the liquid film, the lower surface of the substrate stage 200, and the inner bottom wall of the cavity 100 form a closed space, and the drain port 110 communicates with this closed space. In some embodiments, the liquid film, the lower surface of the substrate stage 200, the inner bottom wall of the cavity 100, and the inner sidewall of the cavity 100 together form a closed space, and the drain port 110 communicates with this closed space. In some embodiments, during the substrate wet process, the driving device 400 drives the substrate stage 200 to rotate, the process nozzle 600 sprays processing liquid onto the substrate 210, and the spraying device 300 sprays liquid onto the lower surface of the substrate stage 200. After the liquid reaches the lower surface of the substrate stage 200, it rotates with the substrate stage 200 and, under the action of centrifugal force and gravity, spreads out below the substrate stage 200, forming a liquid film around the substrate stage 200, which covers the drain port 110. In the example shown in Figure 3, the substrate stage 200 throws the liquid onto the inner wall of the cavity 100, and it flows down along the inner wall of the cavity 100, forming a liquid film in the space inside the cavity 100. When the waste gas generated by the evaporation of the processing liquid overflows from the drain port 110 into the cavity, it comes into contact with the liquid film and dissolves in the liquid film, and is discharged from the drain channel 510 along with the processing liquid. In addition, the liquid sprayed by the spraying device 300 also mixes with the processing liquid, diluting the processing liquid and further reducing the evaporation of the processing liquid. As shown in Figure 4, in some other embodiments, the substrate stage 200 fails to throw the liquid onto the inner wall of the cavity 100, and the formed liquid film falls on the bottom of the cavity 100. The drain port 110 is located within the coverage area of the liquid film. The exhaust gas overflowing from the drain channel 510 into the cavity 100 can still be completely blocked by the liquid film and dissolved in the liquid film, and discharged from the drain port 110 along with the treatment liquid.
[0042] As shown in Figures 3 and 4, in some embodiments, the spraying device 300 includes a plurality of nozzles 310 (e.g., two), which are evenly distributed circumferentially along the substrate stage 200. In this embodiment, the spraying device 300 also includes a spraying pipe 320 and a switching valve 330, which is disposed on the spraying pipe 320 and used to control the opening and closing of the spraying pipe 320.
[0043] In some embodiments, as shown in FIG5, the liquid spraying device 300 sprays liquid onto the lower surface of the substrate stage 200 in the direction of rotation of the substrate stage 200 (e.g., clockwise). Upon reaching the lower surface of the substrate stage 200, the liquid sprayed from the liquid spraying device 300 has an initial velocity in the direction of rotation of the substrate stage 200, thereby achieving a greater rotational speed during rotation. Under the action of centrifugal force, the liquid can spread more fully, which is beneficial for the formation of a liquid film.
[0044] To precisely control the flow rate within the spraying device 300, as shown in Figure 6, in some embodiments, the spraying device 300 further includes a flow regulating device 340. The flow regulating device 340 can adjust the flow rate of the spraying device 300 to adjust the coverage area of the liquid film. In this embodiment, the flow regulating device 340 includes a flow meter 341 and a needle valve 342. The flow meter 341 is used to detect the flow rate of the spraying device 300. The needle valve 342 can be an MNV (Motor needle valve) used to regulate the flow rate of the spraying device 300. In this embodiment, the flow regulating device 340 is installed on the spray pipe 320. When the spraying device 300 is spraying liquid, the flow meter 341 can detect the flow rate within the spray pipe 320 in real time, and the needle valve 342 can adjust the flow rate within the spray pipe 320 based on the detection result of the flow meter 341. In this embodiment, when the treatment liquid is more volatile and generates more waste gas, the flow rate in the spray pipe 320 can be increased; conversely, the flow rate in the spray pipe 320 can be appropriately reduced.
[0045] In some embodiments, as shown in FIG7, an exhaust gas concentration detection sensor 700 may be added inside the cavity 100 to detect the concentration of exhaust gas and replace manual operation through an automatic control system. The location of the exhaust gas concentration detection sensor 700 can be set according to the actual structural characteristics of the semiconductor device, and this application does not impose any limitations on this. In some embodiments, the exhaust gas concentration detection sensor 700 may be located on the inner wall of the cavity 100. The flow regulating device 340 is also used to adjust the flow rate of the spraying device 300 according to the detection result of the exhaust gas concentration detection sensor 700. When the exhaust gas concentration is too high, the flow regulating device 340 increases the flow rate inside the spraying device 300 to increase the coverage area of the liquid film, thereby dissolving more exhaust gas and further diluting the treated liquid in the discharge. When the exhaust gas concentration is low, the flow regulating device 340 decreases the flow rate of the spraying device 300 to decrease the coverage area of the liquid film and reduce liquid consumption.
[0046] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.
Claims
1. A semiconductor device, characterized in that, include: The cavity has a drain port; A substrate stage, located within the cavity, is used to support the substrate; A driving device, located below the substrate stage, is used to drive the substrate stage to rotate; The liquid spraying device is configured to spray liquid and form a liquid film covering the drain port.
2. The semiconductor device as claimed in claim 1, characterized in that, The liquid spraying device is configured to spray liquid onto the lower surface of the substrate stage when the substrate stage rotates, so as to form the liquid film.
3. The semiconductor device as described in claim 2, characterized in that, The liquid spraying device includes a plurality of nozzles, which are uniformly distributed along the circumference of the substrate stage.
4. The semiconductor device as claimed in claim 2, characterized in that, The spraying device is further configured to spray liquid onto the lower surface of the substrate stage in the direction of rotation of the substrate stage.
5. The semiconductor device as described in claim 1 or 2, characterized in that, The spraying device also includes a flow regulating device for adjusting the flow rate of the spraying device to adjust the coverage area of the liquid film.
6. The semiconductor device as claimed in claim 5, characterized in that, It also includes an exhaust gas concentration detection sensor for detecting the exhaust gas concentration inside the cavity; The flow regulating device is also used to adjust the flow rate of the spraying device according to the detection result of the exhaust gas concentration detection sensor.
7. The semiconductor device as claimed in claim 1, characterized in that, The liquid sprayed by the spraying device is deionized water.
8. The semiconductor device as claimed in claim 1, characterized in that, It also includes a drainage section, which includes a drainage channel, a switch valve and a check valve. The switch valve and the check valve are disposed on the drainage channel, and the drainage channel is connected to the drainage port.