Acidic composition, its use and a process for cleaning substrates comprising tungsten or tungsten alloy
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- BASF SE
- Filing Date
- 2025-12-22
- Publication Date
- 2026-07-02
AI Technical Summary
Existing cleaning compositions for microelectronic substrates with tungsten or tungsten alloy surfaces face issues with high tungsten etching rates and ineffective removal of post-etch residues and chemical mechanical planarization residues, leading to potential galvanic corrosion and contamination that can impair the functionality of semiconductor integrated circuits.
An acidic composition comprising specific organic bases, complexing agents, polymeric dispersing agents, anionic and non-ionic surfactants, and water, with a pH range of 3.5 to 6.5, effectively removes post-etch and CMP residues while inhibiting tungsten etching and preventing precipitation, using a ratio of complexing agents to polymeric dispersing agents between 10 to 20 by mass.
The composition provides efficient residue removal without affecting electrical materials, ensures a stable formulation, and maintains a low tungsten etching rate, offering a high-quality surface finish and environmental benignity.
Smart Images
Figure EP2025088729_02072026_PF_FP_ABST