Transistor and manufacturing method therefor, and electronic device

Abstract

Disclosed in the present application are a transistor and a manufacturing method therefor, and an electronic device. Materials for manufacturing an electrode include a titanium alloy and a gold alloy; a conductive penetration portion passes through a barrier layer and is directly connected to the electrode and a two-dimensional electron gas in a channel layer, respectively, thereby realizing direct contact between the electrode and the two-dimensional electron gas; and when the contact between the electrode and the two-dimensional electron gas is ohmic contact, the presence of the conductive penetration portion can reduce contact resistance during the ohmic contact, thereby improving the electrical performance of the transistor.

Description

A transistor, its fabrication method and electronic device

[0001] Cross-references to related applications

[0002] This application claims priority to Chinese Patent Application No. 202411976393.X, filed on December 30, 2024, entitled "A transistor, a method of manufacturing the same and an electronic device", the entire contents of which are incorporated herein by reference. Technical Field

[0003] This application relates to the field of semiconductor technology, and more particularly to a transistor, a method of manufacturing the transistor, and an electronic device thereof. Background Technology

[0004] Compared to transistors with silicon-based channels, GaN-based transistors exhibit a wider bandgap, higher thermal conductivity, and lower on-resistance, enabling the fabrication of devices with lower energy loss and better reliability. Higher quality source / drain electrodes result in lower contact resistance at ohmic contacts, leading to higher device efficiency and output power. Therefore, reducing contact resistance at ohmic contacts is a pressing technical challenge in this field. Summary of the Invention

[0005] This application provides a transistor, its manufacturing method, and an electronic device for reducing contact resistance in ohmic contacts.

[0006] In a first aspect, embodiments of this application provide a transistor, including: a substrate, and a channel layer and a barrier layer sequentially stacked on the substrate;

[0007] The transistor also includes: an electrode disposed on the side of the barrier layer away from the channel layer, the electrode including at least one of a source and a drain, and the electrode being made of materials including: titanium alloy and gold alloy.

[0008] The transistor also includes a conductive penetration section that passes through the barrier layer and is directly connected to the two-dimensional electron gas in the electrode and the channel layer, respectively.

[0009] Secondly, embodiments of this application provide a method for manufacturing a transistor, comprising:

[0010] A channel layer and a barrier layer are sequentially stacked on the substrate;

[0011] A titanium alloy layer and a gold layer are sequentially stacked on top of the barrier layer using a coating technology.

[0012] The substrate on which the titanium alloy layer and the gold layer are formed is heat-treated to form a conductive penetrating part and an electrode. The conductive penetrating part passes through the barrier layer and is directly connected to the two-dimensional electron gas in the electrode and the channel layer, respectively. The electrode is made of titanium alloy and gold alloy formed from titanium alloy in the titanium alloy layer and gold in the gold layer.

[0013] Thirdly, embodiments of this application provide an electronic device, including: the transistor described above as provided in embodiments of this application.

[0014] The beneficial effects of this application are as follows:

[0015] This application provides a transistor, its fabrication method, and an electronic device. The electrode is made of titanium alloy and gold alloy. The conductive penetration portion passes through the barrier layer and is directly connected to the two-dimensional electron gas in the electrode and the channel layer, respectively, realizing direct contact between the electrode and the two-dimensional electron gas. When the contact between the electrode and the two-dimensional electron gas is an ohmic contact, the presence of the conductive penetration portion can reduce the contact resistance during the ohmic contact, thereby improving the electrical performance of the transistor. Attached Figure Description

[0016] Figure 1 is a schematic diagram of a transistor structure provided in an embodiment of this application;

[0017] Figure 2 is a flowchart of a transistor fabrication method provided in an embodiment of this application;

[0018] Figure 3 is a schematic diagram of the structure of an electronic device provided in an embodiment of this application;

[0019] Figure 4 is a test result diagram of the contact resistance of Embodiment 1 provided in this application;

[0020] Figure 5 is a topographic diagram of the source electrode of Embodiment 1 provided in this application;

[0021] Figure 6 is an element distribution diagram of Embodiment 1 provided in this application;

[0022] Figure 7 shows the output curve of the transistor in Embodiment 1 provided in this application;

[0023] Figure 8 shows the transfer characteristic curve of Embodiment 2 provided in this application. Detailed Implementation

[0024] The following detailed description, with reference to the accompanying drawings, provides a detailed embodiment of a transistor, its fabrication method, and the electronic device provided in this application. It should be noted that the described embodiments are merely some, not all, of the embodiments described in this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0025] This application provides a transistor, as shown in FIG1. ​​The transistor may include: a substrate 10, and a channel layer 20 and a barrier layer 30 sequentially stacked on the substrate 10; the transistor further includes: an electrode 40 disposed on the side of the barrier layer 30 away from the channel layer 20, the electrode 40 including at least one of a source 41 and a drain 42, for example: when there is one electrode 40 disposed on the side of the barrier layer 30 away from the channel layer 20, the electrode 40 can be a source 41 or a drain 42, or when there are two electrodes 40 disposed on the side of the barrier layer 30 away from the channel layer 20, the two electrodes 40 can be a source 41 and a drain 42 respectively; the electrode 40 is made of materials including: titanium alloy and gold alloy; the transistor further includes a conductive penetration portion 50, the conductive penetration portion 50 passes through the barrier layer 30 and is directly connected to the electrode 40 and the two-dimensional electron gas 21 in the channel layer 20 respectively.

[0026] Thus, the conductive penetration portion 50 passes through the barrier layer 30 and is directly connected to the two-dimensional electron gas 21 in the electrode 40 and the channel layer 20, respectively, realizing direct contact between the electrode 40 and the two-dimensional electron gas 21. When the contact between the electrode 40 and the two-dimensional electron gas 21 is an ohmic contact, the contact resistance between the electrode 40 and the two-dimensional electron gas 21 can be reduced. For example, the contact resistance between the electrode 40 and the two-dimensional electron gas 21 can be no greater than 0.15 Ωmm, thereby improving the electrical performance of the transistor.

[0027] Optionally, the material used to fabricate the channel layer 20 may be, but is not limited to, GaN or other materials, and the material used to fabricate the barrier layer 30 may be, but is not limited to, AlGaN or AlN or other materials. The specific materials can be set according to actual needs. Any material that can form a two-dimensional electron gas 21 on the side of the channel layer 20 facing the barrier layer 30 is within the protection scope of the embodiments of this application.

[0028] Optionally, the types of titanium alloys and gold alloys in electrode 40 may include the following:

[0029] The first type: Titanium alloys include at least one of the following: titanium-magnesium alloy, titanium-tin alloy, titanium-magnesium-tantalum alloy, titanium-magnesium-vanadium alloy, titanium-tin-tantalum alloy, and titanium-tin-vanadium alloy.

[0030] At this point, the gold alloy can be an alloy formed by at least some of the elements other than titanium in the titanium alloy and the gold element; for example, but not limited to: the titanium alloy is a titanium-magnesium alloy, and the gold alloy is a gold-magnesium alloy; or, the titanium alloy is a titanium-tin alloy and a titanium-tin-vanadium alloy, and the gold alloy is a gold-tin-vanadium alloy, a gold-tin alloy, or a gold-tin alloy and a gold-tin-vanadium alloy, etc., which will not be listed here.

[0031] Titanium reacts with semiconductor materials in a solid-state reaction to form defects and vacancies. Magnesium and tin, with their low melting points and good fluidity, can penetrate into the barrier layer 30 along these defects and vacancies, disrupting the crystal structure and promoting the formation of the conductive penetration portion 50. Tantalum and vanadium provide diffusion channels for the conductive penetration portion 50 to grow into the channel layer 20, resulting in a larger conductive penetration portion 50. Therefore, selecting these elements to compose titanium and gold alloys is more conducive to forming deeper and larger conductive penetration portions 50, thereby reducing contact resistance.

[0032] The second type: titanium alloys, including titanium-aluminum alloys.

[0033] At this point, the gold alloy can be an alloy formed by at least some of the elements other than titanium in the titanium alloy and the gold element; for example, the gold alloy is a gold-aluminum alloy.

[0034] Because aluminum has a low melting point and good fluidity, when defects and vacancies are formed, these elements can enter the barrier layer 30 along the defects and vacancies, destroy the crystal structure, and thus promote the formation of the conductive penetration part 50.

[0035] It should be noted that in this second method, the role of titanium is the same as that described in the first method, and will not be elaborated further here.

[0036] The third type: Based on the second type, titanium alloys also include at least one of titanium-aluminum-tantalum alloys and titanium-aluminum-vanadium alloys.

[0037] At this point, the gold alloy can be an alloy formed by at least some of the elements other than titanium in the titanium alloy and the gold element; for example, but not limited to: the gold alloy is at least one of gold-aluminum alloy, gold-aluminum-tantalum alloy, and gold-aluminum-vanadium alloy.

[0038] It should be noted that in this third method, the roles of tantalum and vanadium are the same as those described in the first method, and will not be elaborated further here.

[0039] In summary, among titanium alloys and gold alloys, elements with suitable melting points, good fluidity, and the ability to form alloys with titanium and gold can be selected. For example, but not limited to: when forming the conductive penetration portion 50, a heat treatment process is used. The heat treatment temperature generally does not exceed the decomposition temperature of the semiconductor layer material. In this case, elements with melting points not exceeding the decomposition temperature are selected so that the elements can flow during heat treatment, thereby enabling the growth of the conductive penetration portion 50. That is to say, metallic or non-metallic elements that can flow within the heat treatment temperature and can form alloys with titanium and gold can be used to form the electrode 40. Such elements are not limited to magnesium, tin, aluminum, tantalum, and vanadium, but can also be other elements with similar properties.

[0040] Optionally, the thickness d0 of electrode 40 can be set from 100nm to 400nm, such as, but not limited to: 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 4000nm and other thicknesses, which will not be listed here. The specific thickness can be set according to actual needs.

[0041] Optionally, the conductive penetrating portion 50 can be formed by connecting multiple penetrating islands. Compared with the prior art where each penetrating island exists separately, this increases the contact area between the electrode 40 and the two-dimensional electron gas 21, thereby further reducing the contact resistance.

[0042] Optionally, since the conductive penetration portion 50 is relatively close to the two-dimensional electron gas 21, when titanium nitride is included in the conductive penetration portion 50, the distance between the electrode 40 and the two-dimensional electron gas 21 is shortened, which can reduce the potential barrier between the electrode 40 and the two-dimensional electron gas 21, increase the electron tunneling effect, and thus reduce the contact resistance.

[0043] Furthermore, the conductive penetration portion 50 includes a third alloy, which can be in a mesh structure and dispersed within the conductive penetration portion 50. This helps to increase the lateral area of ​​the conductive penetration portion 50 and reduce the contact resistance. It should be understood that the lateral area of ​​the conductive penetration portion 50 refers to the area of ​​the cross-section of the conductive penetration portion 50 parallel to the surface of the substrate 10.

[0044] Furthermore, the third alloy can be an alloy formed by at least some of the elements other than titanium in the titanium alloy and gold; in other words, during the heat treatment process, when defects and vacancies are formed on the surface of the barrier layer 30, the gold alloy can enter the barrier layer 30 along the defects and vacancies, so that the volume of the gold alloy in the barrier layer 30 gradually increases and disperses in a network structure, and the third alloy can be the same as the gold alloy. Alternatively, the third alloy can be an alloy composed of elements that enter the barrier layer 30 along the defects and vacancies, in which case the third alloy can be different from the gold alloy.

[0045] Optionally, in addition to the structures described above, the transistor may also include other structures for realizing the transistor function. For example, the transistor may also include a gate 43, which may be located on the side of the barrier layer 30 away from the channel layer 20, and the gate 43 may be located between the source 41 and the drain 42. Furthermore, the transistor may be a high electron mobility transistor, a field-effect transistor, or other types of transistors. Any transistor that includes a two-dimensional electron gas 21 falls within the scope of the transistors to be protected in this application embodiment.

[0046] Based on the same inventive concept, this application provides a method for manufacturing a transistor, as shown in FIG2. This method is used to manufacture the transistor described above, and the method may include:

[0047] S201. A channel layer and a barrier layer are sequentially stacked on the substrate;

[0048] S202. Using a coating technology, a titanium alloy layer and a gold layer are sequentially stacked on top of the barrier layer.

[0049] S203. The substrate on which the titanium alloy layer and the gold layer are formed is heat-treated to form a conductive penetrating part and an electrode. The conductive penetrating part passes through the barrier layer and is directly connected to the two-dimensional electron gas in the electrode and the channel layer, respectively. The electrode is made of titanium alloy and gold alloy formed from titanium alloy in the titanium alloy layer and gold in the gold layer.

[0050] Since existing technologies typically use ion implantation, regeneration, or etching to form ohmic contacts, the embodiments of this application do not require ion implantation, regeneration, or etching as in existing technologies. Ohmic contacts can be formed using coating and heat treatment technologies. Furthermore, the formed conductive penetration portion can be directly connected to the electrode and the two-dimensional electron gas in the channel layer, respectively. This reduces the contact resistance between the electrode and the two-dimensional electron gas, thereby reducing the contact resistance during ohmic contact. It also ensures the integrity of the heterojunction structure formed by the channel layer and the barrier layer, and of course, reduces the manufacturing cost.

[0051] Optionally, when forming the titanium alloy layer, the selected titanium alloy may include at least one of the following: titanium-aluminum alloy, titanium-aluminum-tantalum alloy, titanium-aluminum-vanadium alloy, titanium-magnesium alloy, titanium-magnesium-tantalum alloy, titanium-magnesium-vanadium alloy, titanium-tin alloy, titanium-tin-tantalum alloy, titanium-tin-vanadium alloy, etc. These titanium alloys readily react with elements in the gold and semiconductor layers during heat treatment, thereby promoting the growth of conductive penetrations, enabling direct connection between the electrode and the two-dimensional electron gas, and reducing contact resistance.

[0052] It should be understood that the type of titanium alloy in the titanium alloy layer remains basically unchanged before and after heat treatment. In other words, if the titanium alloy in the titanium alloy layer is a titanium-magnesium alloy before heat treatment, then the titanium alloy in the electrode will still be a titanium-magnesium alloy after heat treatment. However, the amount of titanium-magnesium alloy after heat treatment will be less than that before heat treatment. Of the reduced portion of titanium-magnesium alloy, titanium is used to form titanium nitride in the conductive penetration part, and magnesium is used to form gold alloy and third alloy.

[0053] Of course, after heat treatment, an alloy including titanium and gold may be present in the electrode or the conductive penetration part, and such an alloy can also be used to form the conductive penetration part.

[0054] In titanium alloys, the atomic percentage ratio of titanium to other elements can be set according to actual needs, such as, but not limited to, ratios of 2:1, 1:1, 1:2, 1:3, 1:4, 9:11, etc., without specific limitations.

[0055] Furthermore, at least one titanium alloy layer can be provided. When multiple titanium alloy layers are provided, the materials used to manufacture two adjacent titanium alloy layers can be different, and the materials used to manufacture two non-adjacent titanium alloy layers can be the same or different, so that at least some of the titanium alloy layers are made of different materials. This can meet the design needs of different application scenarios and can also realize the combination of multiple titanium alloys. By utilizing the different properties of titanium alloys, the growth of conductive penetration parts can be further promoted.

[0056] The thickness of each titanium alloy layer can be set from 80nm to 120nm, such as, but not limited to: 80nm, 85nm, 90nm, 95nm, 100nm, 110nm, 120nm and other thicknesses, which will not be listed here. The specific thickness can be set according to actual needs.

[0057] The thickness of the gold layer can be set from 50nm to 200nm, such as, but not limited to: 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 180nm, 190nm, 200nm, etc. Other thicknesses will not be listed here. The specific thickness can be set according to actual needs.

[0058] Optionally, when forming the titanium alloy layer and gold layer using coating technology, other technologies such as magnetron sputtering can be used, but are not limited to. During heat treatment, rapid annealing can be employed to establish ohmic contact between the electrode and the two-dimensional electron gas. The annealing temperature range can be set to, but is not limited to, 800℃~950℃, and the annealing time can be, but is not limited to, 30S~90S. The gas introduced during annealing is an inert gas, such as, but not limited to, nitrogen or argon. It should be understood that the parameters during annealing can be set according to actual needs and are not specifically limited here.

[0059] Based on the same inventive concept, this application provides an electronic device, as shown in FIG3. The electronic device may include the transistors provided in the embodiments of this application, and may also include other active or passive devices. The specific design can be made according to the function of the electronic device, and is not limited here.

[0060] In summary, the technical solutions provided in the embodiments of this application have the following advantages:

[0061] 1. Currently widely used methods for achieving ohmic contacts include ion implantation, regeneration, and etching. However, these methods all damage the heterojunction structure, thereby reducing the two-dimensional electron gas density and deteriorating device reliability. The embodiments of this application employ coating technology combined with heat treatment technology, which can ensure the integrity of the heterojunction structure and prevent the reduction of the two-dimensional electron gas density, thereby improving the reliability of transistors and even electronic devices.

[0062] 2. The composition of the metal stack in the source and / or drain electrodes is optimized. After annealing, a conductive penetration part is grown at the interface between the electrode and the semiconductor. This conductive penetration part can directly contact the two-dimensional electron gas. By utilizing the high conductivity of the components in the conductive penetration part, direct communication between the electrode and the two-dimensional electron gas is achieved, thereby obtaining a very low contact resistance.

[0063] The transistor will now be described in conjunction with specific embodiments.

[0064] Example 1: The channel layer is a GaN layer, the barrier layer is an AlGaN layer, and the titanium alloy layer includes two film layers, namely a titanium-aluminum alloy layer and a titanium-aluminum-tantalum alloy layer. Both the source and drain electrodes include a titanium alloy layer and a gold layer, and the titanium alloy layers in the source and drain electrodes are made of the same material.

[0065] The fabrication process of the source and drain electrodes includes: using exposure technology to form a mask with a specific pattern on the AlGaN layer; using magnetron sputtering technology to deposit a titanium-aluminum alloy layer of a certain thickness on the mask, with the atomic percentage ratio of titanium to aluminum being 1:3; continuing to use magnetron sputtering technology to deposit a titanium-aluminum-tantalum alloy layer of a certain thickness on the titanium-aluminum alloy layer, with the atomic percentage ratio of titanium, aluminum, and tantalum being 45:45:10; continuing to use magnetron sputtering technology to deposit a gold layer of a certain thickness on the titanium-aluminum-tantalum alloy layer; peeling off the mask, leaving the titanium-aluminum alloy layer, titanium-aluminum-tantalum alloy layer, and gold layer at specific locations, while removing the titanium-aluminum alloy layer, titanium-aluminum-tantalum alloy layer, and gold layer at other locations; and performing heat treatment on the peeled structure to grow conductive penetrations within the AlGaN layer, thereby forming the source and drain electrodes.

[0066] The fabrication processes of the channel layer, barrier layer, and gate can be carried out using methods well known to those skilled in the art, and will not be described in detail here.

[0067] Referring to Figure 4, Figure 4(a) shows the fitted curve. Calculations based on this curve reveal that the contact resistance of the transistor is as low as 0.07 Ωmm. Figure 4(b) shows the contact resistance of five randomly selected transistors. The contact resistances of these five transistors are 0.07 Ωmm, 0.08 Ωmm, 0.10 Ωmm, 0.11 Ωmm, and 0.15 Ωmm, respectively. The average value obtained by averaging these five values ​​is 0.10 Ωmm, demonstrating an extremely low contact resistance.

[0068] Referring to Figure 5, Figure 5(a) shows the surface morphology of the source electrode in the embodiment. It can be seen from the figure that the source electrode surface is relatively flat, with a refined structure, no large lumps, and no areas of structural inhomogeneity, which is beneficial to improving the reliability of the transistor. Figure 5(b) shows the cross-sectional morphology of the transistor. It can be seen from the figure that the edge of the source electrode (as indicated by the arrow in Figure 5) is sharp and neat, without burr-like structures or discontinuous areas. This avoids the degradation of the transistor's breakdown performance under high voltage due to edge discontinuities, thus improving the transistor's voltage withstand capability and reliability. It should be noted that since Figure 5(a) and Figure 5(b) are black and white processed images, some morphological details may not be effectively displayed.

[0069] Referring to Figure 6, Figure 6(a) shows a HAADF-STEM image of the transistor cross-section, in which the boundaries of the electrodes, conductive permeable portions, and channel layer are clearly marked. It can be seen from the image that the electrode structure is relatively uniform, with no large insoluble particles. This avoids premature breakdown of the transistor under high electric fields caused by large insoluble particles, thus improving the transistor's withstand voltage performance. Furthermore, an etch-like conductive permeable portion is found between the electrode and the channel layer. This conductive permeable portion has a large channel contact area and a smooth contour. The smooth, burr-free surface contour effectively prevents electric field concentration, thereby improving the transistor's withstand voltage performance and reliability. Figure 6(b) shows the distribution of Ti near the interface, Figure 6(c) shows the distribution of Al near the interface, Figure 6(d) shows the distribution of Ta near the interface, Figure 6(e) shows the distribution of Au near the interface, and Figure 6(f) shows the distribution of N near the interface. The distribution of Ga is not shown. The elemental distribution results show that Ti and N are concentrated in the conductive penetration area, confirming that its main composition is TiN. Al, Au, and Ta are concentrated in the conductive penetration area. The Al-Au alloy can dissolve the Ga element on the surface of the channel layer, providing a growth path for the conductive penetration area. The presence of Ta provides a stable diffusion channel to the semiconductor layer for the Al-Au alloy, facilitating timely replenishment of the Al-Au alloy. In this way, the conductive penetration area can continuously grow into the semiconductor layer, achieving greater growth depth and a smoother profile. The third alloy within the conductive penetration area is a gold-aluminum-tantalum alloy. It should be noted that since Figures 6(a), 6(b), 6(c), 6(d), 6(e), and 6(f) are images that have been processed into black and white, some details of the shapes may not be effectively displayed.

[0070] Referring to Figure 7, Figure 7(a) shows the output curves when the gate-source voltage is -10 to 6V, where the distance between the source and drain (i.e., the source-drain distance) is 10μm and the distance between the gate and drain (i.e., the gate-drain distance) is 4μm. It can be seen from the figure that at a gate-source voltage of 6V, the transistor's source-drain saturation current is 792.15mA / mm, and the corresponding on-resistance is 5.45Ωmm, demonstrating excellent output performance and extremely low conduction loss. Figure 7(b) shows the breakdown characteristic curves, with a breakdown limit set at 100μA / mm. It can be seen from the figure that when the gate-drain distances are 4μm, 14μm, 24μm, and 29μm, the corresponding breakdown voltages are 632V, 707V, 865V, and 915V, respectively, demonstrating excellent withstand voltage performance. Excellent output performance and extremely low conduction loss are attributed to the large contact area between the conductive penetration part and the two-dimensional electron gas, which improves the electron transport efficiency. The outstanding withstand voltage performance is attributed to the flat surface morphology, uniform internal structure, and flat conductive penetration part profile, which effectively suppress electric field concentration and prevent low-voltage breakdown of the transistor.

[0071] Example 2: The difference from Example 1 is that the titanium alloy layer includes two film layers, namely a titanium-aluminum alloy layer and a titanium-aluminum-vanadium alloy layer, and the atomic percentage ratio of titanium, aluminum and vanadium in the titanium-aluminum-vanadium alloy layer is 45:45:10.

[0072] Referring to Figure 8, which shows the transfer characteristic curve, the source-drain voltage was kept constant at 6V during the test. The figure shows that the threshold voltage of the transistor is approximately -8.89V. As the gate-source voltage increases, the two-dimensional electron gas channel gradually opens, and the transconductance gradually reaches its peak value. The transconductance reflects the channel's turn-on capability; a larger peak transconductance indicates better channel turn-on capability, and vice versa. The measured peak transconductance is 78.00 mS / mm, indicating good channel capability. Furthermore, as the gate-source voltage further increases, the current gradually approaches saturation. When the gate-source voltage reaches 6V, the source-drain current is 343.09 mA / mm, demonstrating good output performance.

[0073] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.

Claims

1. A transistor, characterized by, The transistor comprises: a substrate, and a channel layer and a barrier layer which are sequentially stacked on the substrate; the transistor further comprises an electrode provided on a side of the barrier layer away from the channel layer, the electrode comprising at least one of a source and a drain, and a manufacturing material of the electrode comprising a titanium alloy and a gold alloy; the transistor further comprises a conductive penetration portion which penetrates through the barrier layer and is directly connected to a two-dimensional electron gas in the electrode and the channel layer, respectively.

2. The transistor of claim 1, wherein The titanium alloy comprises at least one of a titanium-magnesium alloy, a titanium-tin alloy, a titanium-magnesium-tantalum alloy, a titanium-magnesium-vanadium alloy, a titanium-tin-tantalum alloy, and a titanium-tin-vanadium alloy.

3. The transistor of claim 1, wherein The titanium alloy comprises a titanium-aluminum alloy, and the titanium alloy further comprises at least one of a titanium-aluminum-tantalum alloy and a titanium-aluminum-vanadium alloy.

4. The transistor according to any one of claims 1 to 3, wherein The gold alloy is an alloy formed by at least part of elements other than titanium in the titanium alloy and a gold element.

5. The transistor according to any one of claims 1 to 4, wherein A contact resistance between the electrode and the two-dimensional electron gas is not greater than 0.15 Ωmm.

6. The transistor of any one of claims 1-5, wherein, The conductive penetration portion comprises titanium nitride.

7. The transistor according to any one of claims 1 to 6, wherein The conductive penetration portion comprises a third alloy in a net structure.

8. The transistor of claim 7, wherein The third alloy is an alloy formed by at least part of elements other than titanium in the titanium alloy and a gold element.

9. A method of fabricating a transistor, comprising: The transistor comprises: a channel layer and a barrier layer which are sequentially stacked on a substrate; a titanium alloy layer and a gold layer are sequentially stacked on the barrier layer by a plating film technology; a substrate on which the titanium alloy layer and the gold layer are formed is subjected to heat treatment, so as to form a conductive penetration portion and an electrode, the conductive penetration portion penetrating through the barrier layer and being directly connected to a two-dimensional electron gas in the electrode and the channel layer, respectively; a manufacturing material of the electrode comprises a titanium alloy and a gold alloy formed by a titanium alloy in the titanium alloy layer and a gold in the gold layer.

10. An electronic device, characterized by The transistor comprises: any one of claims 1-8.

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