Radio frequency switch, radio frequency front-end module, and electronic device

Abstract

The present application discloses a radio frequency switch, a radio frequency front-end module, and an electronic device. The radio frequency switch comprises N transistors which are sequentially connected in series and at least one harmonic suppression module, N being an integer greater than 1. The harmonic suppression module is connected between two connection electrodes corresponding to two of the transistors, and the harmonic suppression module is used for suppressing a harmonic signal in a radio frequency signal passing through the radio frequency switch. The transistors are field effect transistors, and the two connection electrodes corresponding to two of the transistors are two body electrodes or two gate electrodes. The harmonic suppression module in the present application is not directly connected to a main radio frequency path (that is, the harmonic suppression module is not directly connected to a source electrode or a drain electrode of a field effect transistor), but instead is connected between the two body electrodes or two gate electrodes. The foregoing connection manner can prevent another harmonic signal generated by the harmonic suppression module from affecting the main radio frequency path, to ensure that the radio frequency signal can be normally transmitted on the main radio frequency path.

Description

RF switches, RF front-end modules and electronic devices

[0001] This application is based on and claims priority to Chinese patent application No. 202510001101.9 filed on January 2, 2025, entitled "RF switch, RF front-end module and electronic device". Technical Field

[0002] This application relates to the field of radio frequency technology, and more specifically, to a radio frequency switch, a radio frequency front-end module, and an electronic device. Background Technology

[0003] Currently, radio frequency (RF) front-end modules are widely used in wireless communication, the Internet of Things (IoT), smart homes, and other fields. They can process RF signals (e.g., power amplification, modulation and demodulation) to complete the tasks of receiving and transmitting RF signals.

[0004] In existing radio frequency (RF) front-end modules, RF switches are an important component. They can be used to switch the transmission of RF signals in different frequency bands to ensure the normal operation of various chips and components in the RF front-end module. Alternatively, RF switches can also be used in tuning circuits to achieve tuning operations on RF signals.

[0005] Specifically, an RF switch may include multiple transistors connected in series. During the process of an RF signal passing through an RF switch, harmonic signals (e.g., second-order harmonics and third-order harmonics) may be generated, thereby affecting the transmission quality of the RF signal. Summary of the Invention

[0006] This application provides an embodiment of a radio frequency switch, a radio frequency front-end module, and an electronic device.

[0007] According to a first aspect of this application, an embodiment of this application provides a radio frequency (RF) switch, which includes N transistors connected in series and at least one harmonic suppression module, where N is an integer greater than 1. The harmonic suppression module is connected between the two terminals corresponding to two of the transistors, and is used to suppress harmonic signals in the RF signal passing through the RF switch. The transistors are field-effect transistors (FETs), and the two terminals corresponding to two transistors are either two body terminals or two gate terminals.

[0008] This application provides a radio frequency (RF) switch in which a harmonic suppression module is connected between the two terminals of two transistors. This module is used to suppress harmonic signals in the RF signal passing through the RF switch. Specifically, the harmonic suppression module generates a suppression signal that is out of phase with the harmonic signals in the RF signal. This suppression signal can cancel out the harmonic signals, thereby suppressing or even eliminating them and ensuring the transmission quality of the RF signal.

[0009] Furthermore, the transistors in this application are field-effect transistors (FETs), wherein the two terminals corresponding to two transistors are either two body electrodes or two gate electrodes. In some possible cases, the harmonic suppression module can be connected between the two body electrodes corresponding to the two FETs. In other possible cases, the harmonic suppression module can be connected between the two gate electrodes corresponding to the two FETs.

[0010] It should be noted that, in addition to generating the suppression signal, the harmonic suppression module also generates other harmonic signals (i.e., harmonic signals other than the suppression signal). Since the harmonic suppression module in this application is not directly connected to the main RF path (i.e., not directly connected to the source or drain of the field-effect transistor), but rather connected between the two body electrodes or the two gate electrodes, this connection method can prevent other harmonic signals generated by the harmonic suppression module itself from affecting the main RF path, thus ensuring that the RF signal can be transmitted normally on the main RF path.

[0011] Taking the third harmonic signal in the RF signal passing through the RF switch as an example, the harmonic suppression module can generate a suppression signal with the opposite phase to the third harmonic signal (i.e., an inverted signal of the third harmonic signal) to suppress the third harmonic signal. In addition, the harmonic suppression module itself also generates other harmonic signals (e.g., fourth and fifth harmonic signals). Since the harmonic suppression module is not directly connected to the main RF path, the fourth and fifth harmonic signals generated by the module itself can be avoided from affecting the main RF path, thus ensuring the transmission quality of the RF signal.

[0012] According to a second aspect of this application, embodiments of this application also provide a radio frequency (RF) switch, which includes N transistors connected in series and at least one harmonic suppression module, where N is an integer greater than 1. The harmonic suppression module is connected between the two terminals corresponding to two of the transistors, and is used to suppress harmonic signals in the RF signal passing through the RF switch. The transistors are bipolar transistors, and the two terminals corresponding to two transistors are either two body terminals or two base terminals.

[0013] This application provides a radio frequency (RF) switch in which a harmonic suppression module is connected between the two terminals of two transistors. This module is used to suppress harmonic signals in the RF signal passing through the RF switch. Specifically, the harmonic suppression module generates a suppression signal that is out of phase with the harmonic signals in the RF signal. This suppression signal can cancel out the harmonic signals, thereby suppressing or even eliminating them and ensuring the transmission quality of the RF signal.

[0014] Furthermore, the transistors in this application are bipolar transistors, wherein the two terminals corresponding to the two transistors are either the two body terminals or the two base terminals. In some possible cases, the harmonic suppression module can be connected between the two body terminals corresponding to the two bipolar transistors. In other possible cases, the harmonic suppression module can be connected between the two base terminals corresponding to the two bipolar transistors.

[0015] It should be noted that, in addition to generating the suppression signal, the harmonic suppression module also generates other harmonic signals (i.e., harmonic signals other than the suppression signal). Since the harmonic suppression module in this application is not directly connected to the main RF path (i.e., not directly connected to the collector or emitter of the bipolar transistor), but rather connected between the two body electrodes or the two base electrodes, this connection method can prevent other harmonic signals generated by the harmonic suppression module itself from affecting the main RF path, thus ensuring that the RF signal can be transmitted normally on the main RF path.

[0016] Taking the third harmonic signal in the RF signal passing through the RF switch as an example, the harmonic suppression module can generate a suppression signal with the opposite phase to the third harmonic signal (i.e., an inverted signal of the third harmonic signal) to suppress the third harmonic signal. In addition, the harmonic suppression module itself also generates other harmonic signals (e.g., fourth and fifth harmonic signals). Since the harmonic suppression module is not directly connected to the main RF path, the fourth and fifth harmonic signals generated by the module itself can be avoided from affecting the main RF path, thus ensuring the transmission quality of the RF signal.

[0017] According to a third aspect of this application, embodiments of this application also provide a radio frequency (RF) front-end module, which has an antenna port for connecting an antenna; the RF front-end module includes multiple parallel first tuning branches. Each first tuning branch includes a first switch, which has a first connection terminal for connecting to the antenna port and a second connection terminal for grounding; the first switch includes N transistors and at least one harmonic suppression module, the N transistors being connected in series between the first connection terminal and the second connection terminal, where N is an integer greater than 1. The harmonic suppression module is connected between two corresponding terminals of two transistors, and the harmonic suppression module is used to suppress harmonic signals in the RF signal passing through the first switch. One of the harmonic suppression modules is connected to the connection terminal of the first transistor in the direction from the first connection terminal to the second connection terminal of the first switch.

[0018] This application provides a radio frequency front-end module, which includes multiple parallel first tuning branches. The first connection terminal of the first switch included in each first tuning branch is connected to the antenna port, and the second connection terminal of the first switch is grounded. Therefore, the first switch in this embodiment is a tuner switch (i.e., a tuner switch).

[0019] Specifically, the first switch includes N transistors and at least one harmonic suppression module. The harmonic suppression module is used to suppress harmonic signals in the radio frequency signal passing through the first switch. Specifically, the harmonic suppression module can generate a suppression signal that is out of phase with the harmonic signal in the radio frequency signal. This suppression signal can cancel out the harmonic signal, thereby suppressing or even eliminating the harmonic signal and ensuring the transmission quality of the radio frequency signal.

[0020] Furthermore, N transistors are connected in series between the first connection terminal and the second connection terminal, with one harmonic suppression module connected to the terminal of the first transistor in the direction from the first connection terminal of the first switch to the second connection terminal. Since the first connection terminal of the first switch is used to connect to the RF port, the power of the RF signal at the first connection terminal is greater than the power of the RF signal at the second connection terminal. This application improves the suppression effect of the harmonic suppression module on harmonic signals by placing it close to the first connection terminal of the first switch, thereby ensuring the transmission quality of the RF signal.

[0021] According to a fourth aspect of this application, embodiments of this application also provide a radio frequency (RF) front-end module, which includes a signal port and an antenna port for connecting an antenna; the RF front-end module includes multiple parallel second tuning branches. Each second tuning branch includes a second switch, which has a first connection terminal for connecting to the antenna port and a second connection terminal for connecting to the signal port; the second switch includes N transistors and at least one harmonic suppression module, where the N transistors are connected in series between the first connection terminal and the second connection terminal, and N is an integer greater than 1. The harmonic suppression module is connected between two corresponding terminals of two transistors, and the harmonic suppression module is used to suppress harmonic signals in the RF signal passing through the second switch. One of the harmonic suppression modules is connected to the connection terminal of the first transistor in the direction from the first connection terminal to the second connection terminal of the second switch.

[0022] This application provides a radio frequency front-end module, which includes multiple parallel second tuning branches. The first connection terminal of the second switch included in each second tuning branch is connected to the antenna port, and the second connection terminal of the second switch is connected to the signal port. Therefore, the second switch in this embodiment is a radio frequency switch.

[0023] Specifically, the second switch includes N transistors and at least one harmonic suppression module. The harmonic suppression module is used to suppress harmonic signals in the radio frequency signal passing through the second switch. Specifically, the harmonic suppression module can generate a suppression signal that is out of phase with the harmonic signal in the radio frequency signal. This suppression signal can cancel out the harmonic signal, thereby suppressing or even eliminating the harmonic signal and ensuring the transmission quality of the radio frequency signal.

[0024] Furthermore, N transistors are connected in series between the first and second connection terminals, with one harmonic suppression module connected to the terminal of the first transistor in the direction from the first connection terminal of the second switch to the second connection terminal. Since the first connection terminal of the second switch is used to connect to the RF port, the power of the RF signal at the first connection terminal is greater than that at the second connection terminal. This application improves the suppression effect of the harmonic suppression module on harmonic signals by placing it close to the first connection terminal of the second switch, thereby ensuring the transmission quality of the RF signal.

[0025] According to a fifth aspect of this application, embodiments of this application also provide an electronic device, which includes the radio frequency switch described above, or the radio frequency front-end module described above. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 is a schematic diagram of the structure of the radio frequency switch provided in the first embodiment of this application.

[0028] Figure 2 is a schematic diagram of another structure of the radio frequency switch provided in the first embodiment of this application.

[0029] Figure 3 is a schematic diagram of another structure of the radio frequency switch provided in the first embodiment of this application.

[0030] Figure 4 is a schematic diagram of one structure of the mid-harmonic suppression module of the RF switch shown in Figure 1.

[0031] Figure 5 is a schematic diagram of the first and second variable capacitance units in the harmonic suppression module shown in Figure 4.

[0032] Figure 6 is a schematic diagram of another structure of the first and second variable capacitance units in the harmonic suppression module shown in Figure 4.

[0033] Figure 7 is another structural schematic diagram of the mid-harmonic suppression module of the RF switch shown in Figure 1.

[0034] Figure 8 is another structural schematic diagram of the mid-harmonic suppression module of the RF switch shown in Figure 1.

[0035] Figure 9 is a schematic diagram of another structure of the radio frequency switch provided in the first embodiment of this application.

[0036] Figure 10 is a schematic diagram of another structure of the radio frequency switch provided in the first embodiment of this application.

[0037] Figure 11 is a schematic diagram of the structure of the radio frequency switch provided in the second embodiment of this application.

[0038] Figure 12 is a schematic diagram of another structure of the radio frequency switch provided in the second embodiment of this application.

[0039] Figure 13 is a schematic diagram of the structure of the radio frequency front-end module provided in the embodiment of this application.

[0040] Figure 14 is a schematic diagram of another structure of the radio frequency front-end module provided in the embodiment of this application.

[0041] Figure 15 is a schematic diagram of the structure of the electronic device provided in an embodiment of this application. Detailed Implementation

[0042] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are merely some embodiments of the present application, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present application without creative effort are within the scope of protection of the present application.

[0043] Referring to Figure 1, a first embodiment of this application provides a radio frequency (RF) switch 100, which may include N transistors 120 connected in series and at least one harmonic suppression module 140. Here, N is an integer greater than 1. Specifically, N can be equal to 6, 8, 9, 10, 12, 15, 20, etc. In some possible embodiments, researchers can determine the value of N based on the voltage across the RF switch 100 and the withstand voltage of a single transistor 120. For example, if the voltage across the RF switch 100 is 45V and the withstand voltage of a single transistor 120 is 6V, then N can be 8. In other possible embodiments, researchers can determine the value of N based on the actual application scenario of the RF switch 100. For example, when the RF switch 100 is used as a switch in a receiving or transmitting link, the value of N can be greater than or equal to 6 and less than or equal to 9. As another example, when the RF switch 100 is used as a tuner switch, the value of N can be greater than or equal to 10 and less than or equal to 20.

[0044] The harmonic suppression module 140 is connected between the two terminals 121 corresponding to the two transistors 120, and is used to suppress harmonic signals in the radio frequency signal passing through the radio frequency switch 100. Specifically, the harmonic suppression module 140 can generate a suppression signal that is out of phase with the harmonic signal in the radio frequency signal. This suppression signal can cancel out the harmonic signal, thereby suppressing or even eliminating the harmonic signal and ensuring the transmission quality of the radio frequency signal.

[0045] Further, in the embodiment shown in FIG1, transistor 120 is a field-effect transistor, wherein the two connection terminals 121 corresponding to the two transistors 120 are two bodies or two gates. In the embodiment shown in FIG1, the harmonic suppression module 140 can be connected between the two bodies corresponding to the two field-effect transistors. Referring to FIG2, the harmonic suppression module 140 can be connected between the two gates corresponding to the two field-effect transistors.

[0046] It should be noted that, in addition to generating the suppression signal, the harmonic suppression module 140 also generates other harmonic signals (i.e., harmonic signals other than the suppression signal). Since the harmonic suppression module 140 in this application is not directly connected to the main RF path (i.e., not directly connected to the source or drain of the field-effect transistor), but rather connected between the two body electrodes or the two gate electrodes, this connection method can prevent other harmonic signals generated by the harmonic suppression module 140 itself from affecting the main RF path, thus ensuring that the RF signal can be transmitted normally on the main RF path.

[0047] Taking the third harmonic signal in the RF signal passing through RF switch 100 as an example, the harmonic suppression module 140 can generate a suppression signal with the opposite phase to the third harmonic signal (i.e., an inverted signal of the third harmonic signal) to suppress the third harmonic signal. Specifically, when the third harmonic signal passes through RF switch 100, a portion of the third harmonic signal will pass through the branch where the harmonic suppression module 140 is located, and will undergo phase shifting under the action of the harmonic suppression module 140 to generate the aforementioned suppression signal. Specifically, the phase shift of a portion of the third harmonic signal can be greater than or equal to 170 degrees and less than or equal to 190 degrees. Of course, in an ideal situation, the phase shift is equal to 180 degrees. When the suppression signal is combined with another unshifted portion of the third harmonic signal, the two signals can cancel each other out, thereby achieving the suppression of the third harmonic signal.

[0048] In addition, the harmonic suppression module 140 itself will generate other harmonic signals (e.g., fourth harmonic signal, fifth harmonic signal). Since the harmonic suppression module 140 is not directly connected to the main radio frequency path, the fourth harmonic signal and fifth harmonic signal generated by the harmonic suppression module 140 itself can be avoided from affecting the main radio frequency path, thereby ensuring the transmission quality of radio frequency signals.

[0049] It's important to note that in related technologies, researchers typically place a harmonic suppression unit between the gate and drain of a field-effect transistor (FET) to suppress harmonic signals in radio frequency (RF) signals. Furthermore, a resistor is connected in parallel between the gate and drain of the transistor (e.g., FET) in the RF switch (i.e., a resistor directly connected between the gate and drain). However, with this connection method, the harmonic suppression unit itself generates other harmonic signals. These other harmonic signals can enter the main RF path through the gate and drain connected to the harmonic suppression unit, leading to harmonic degradation and ultimately affecting the normal transmission of the RF signal.

[0050] To solve the above problems, the inventors of this application improved the connection position of the harmonic suppression module 140 and did not connect a resistor between the gate and drain of the transistor (e.g., field-effect transistor) of the RF switch. This not only suppresses the harmonic signals generated by the RF switch, but also prevents other harmonic signals generated by the harmonic suppression module 140 itself from being transmitted to the main RF path, thus ensuring the normal transmission of RF signals.

[0051] Furthermore, in related technologies, the parallel resistance between the gate and drain is a common structure of field-effect transistors (FETs). Therefore, setting a harmonic suppression unit between the gate and drain does not affect the original resistance network of the FET. However, in the structure of the RF switch 100 provided in this application, when the harmonic suppression module 140 is set between the two body electrodes or the two gate electrodes, no parallel resistance is set between the two body electrodes or the two gate electrodes (i.e., a resistor directly connected between the two body electrodes or the two gate electrodes) to avoid damaging the original resistance network and to ensure the independence of the structure.

[0052] Furthermore, when the harmonic suppression module 140 is provided between the two body electrodes or the two gate electrodes, the overall structure of the harmonic suppression module 140 is simpler and more compact because there is no direct connection between the two body electrodes or the two gate electrodes.

[0053] The specific implementation of the radio frequency switch 100 is explained below.

[0054] In this embodiment, the radio frequency switch 100 may have a first connection terminal 102 and a second connection terminal 104, and N transistors 120 are connected in series between the first connection terminal 102 and the second connection terminal 104. The transistors 120 are field-effect transistors (FETs). Specifically, in two adjacent FETs, the source of one FET is connected to the drain of the other FET.

[0055] For example, transistor 120 may be a junction field-effect transistor (JFET), a metal-oxide-semiconductor field-effect transistor (MOSFET), a high electron mobility transistor (HEMT), a pseudo-high electron mobility transistor (PHEMT), etc. Of course, transistor 120 may also be other types of field-effect transistors; this embodiment is not specifically limited. Optionally, transistor 120 may be formed on a conventional silicon substrate or on a silicon-on-insulator (SOI) substrate.

[0056] In this embodiment, the harmonic suppression module 140 is connected between the two bodies or two gates corresponding to the two transistors 120, and is used to suppress harmonic signals in the radio frequency signal passing through the radio frequency switch 100. The specific connection position of the harmonic suppression module 140 can be flexibly adjusted by the researchers based on the specific layout of the switch chip containing the N transistors 120; this embodiment does not impose a specific limitation.

[0057] In the embodiments shown in Figures 1 and 2, the harmonic suppression module 140 is connected between the two connection terminals 121 corresponding to two adjacent transistors 120. Since the voltage difference between the two connection terminals 121 corresponding to two adjacent transistors 120 is small, the safety of the harmonic suppression module 140 can be ensured, and the situation of breakdown caused by excessive voltage difference can be avoided.

[0058] In some other possible embodiments, the harmonic suppression module 140 can be connected between the two connection poles 121 corresponding to two non-adjacent transistors 120. For example, if the harmonic suppression module 140 has good withstand voltage performance, one or more transistors 120 can be spaced apart between the two transistors 120 connected to the harmonic suppression module 140, so that the layout of the harmonic suppression module 140 in the RF switch 100 can be more flexible. Referring to Figure 3, a transistor 120 is also spaced apart between the two transistors 120 connected to the harmonic suppression module 140, so that the specific connection position of the harmonic suppression module 140 is more flexible.

[0059] In some possible embodiments, when there are multiple harmonic suppression modules 140, the two transistors 120 connected to some harmonic suppression modules 140 can be two body electrodes, while the two transistors 120 connected to other harmonic suppression modules 140 can be two gate electrodes. Researchers can adjust the connection positions of the harmonic suppression modules 140 according to the actual layout of the RF chip 100; this embodiment does not impose specific limitations.

[0060] In at least one embodiment, at least one harmonic suppression module 140 may include a first harmonic suppression module and a second harmonic suppression module; the first harmonic suppression module is connected between the two body electrodes corresponding to two of the transistors 120, and the second harmonic suppression module is connected between the two gate electrodes corresponding to any other two transistors 120.

[0061] In at least one embodiment, at least one harmonic suppression module 140 may include a first harmonic suppression module and a second harmonic suppression module; the first harmonic suppression module is connected between the two body electrodes corresponding to two of the two transistors 120, and the second harmonic suppression module is connected between the two body electrodes corresponding to any other two transistors 120.

[0062] In at least one embodiment, at least one harmonic suppression module 140 may include a first harmonic suppression module and a second harmonic suppression module; the first harmonic suppression module is connected between the two gates corresponding to two of the transistors 120, and the second harmonic suppression module is connected between the two gates corresponding to any other two transistors 120.

[0063] The specific implementation of the harmonic suppression module 140 is explained below.

[0064] Please refer to Figure 4, where the two connection poles 121 corresponding to the two transistors 120 may include a first connection pole 1212 and a second connection pole 1214. It is easy to understand that the first connection pole 1212 and the second connection pole 1214 correspond to the two connection poles 121 of two different transistors 120, respectively. In order to facilitate the description of the specific connection position of the harmonic suppression module 140, this specification refers to one of the two connection poles 121 as the "first connection pole" and the other as the "second connection pole".

[0065] In this embodiment, the harmonic suppression module 140 may include a first varactor unit 1410 and a second varactor unit 1420. The first varactor unit 1410 and the second varactor unit 1420 are connected in series between a first connection terminal 1212 and a second connection terminal 1214. The end of the first varactor unit 1410 connected to the first connection terminal 1212 and the end of the second varactor unit 1420 connected to the second connection terminal 1214 have the same polarity. That is, in this embodiment, the first varactor unit 1410 and the second varactor unit 1420 are connected in reverse series between the first connection terminal 1212 and the second connection terminal 1214.

[0066] Specifically, when all transistors 120 between the first connection terminal 102 and the second connection terminal 104 are turned on, there is a certain voltage difference between the two connection terminals 121. This voltage difference is simultaneously applied across the first varactor unit 1410 and the second varactor unit 1420, so that the equivalent capacitance value of the first varactor unit 1410 and the second varactor unit 1420 can change with the voltage difference, thereby forming an adjustable capacitor that follows the change of the radio frequency signal voltage. This adjustable capacitor can generate the aforementioned suppression signal.

[0067] In some possible embodiments, the harmonic suppression module 140 is provided with a control terminal 1401, which is used to input the regulating voltage Vc. In the embodiment shown in FIG4, the harmonic suppression module 140 may further include a first resistor unit 1430, one end of which is connected to the control terminal 1401, and the other end of which is connected to a common connection terminal 1403 formed by connecting the first varactor unit 1410 and the second varactor unit 1420. Specifically, the first resistor unit 1430, the first varactor unit 1410, and the second varactor unit 1420 may jointly form an RC phase-shifting circuit to jointly generate the aforementioned suppression signal.

[0068] Since the adjustment voltage Vc input at the control terminal 1401 can be applied to the first varactor unit 1410 and the second varactor unit 1420 respectively through the first resistor unit 1430, the equivalent capacitance values ​​of the first varactor unit 1410 and the second varactor unit 1420 can be flexibly adjusted when the voltage value of the adjustment voltage Vc changes, so as to adjust the suppression effect on harmonic signals and increase the design flexibility of the RF switch 100. For example, the adjustment voltage Vc can be greater than or equal to 2.5V and less than or equal to 3.5V.

[0069] In some possible embodiments, the equivalent resistance value of the first resistor unit 1430 can be greater than or equal to 1 kiloohm. Therefore, the first resistor unit 1430 can be regarded as a large resistor, which can prevent the radio frequency signal from leaking from the control terminal 1401 and causing nonlinear distortion of the signal, thus ensuring the normal transmission of the radio frequency signal. Specifically, the first resistor unit 1430 can be a single resistor or a resistor network formed by multiple resistors connected in series or in parallel. This embodiment does not limit the specific implementation of the first resistor unit 1430.

[0070] In some possible embodiments, there are multiple harmonic suppression modules 140, and the regulated voltage Vc input to the multiple control terminals 1401 corresponding to the multiple harmonic suppression modules 140 is the same voltage. Exemplarily, the RF switch 100 can be integrated within a switch chip, and the multiple control terminals 1401 corresponding to the multiple harmonic suppression modules 140 can all be connected to the same power supply port on the switch chip, making the circuit layout of the entire RF switch 100 simpler and more compact. Specifically, this power supply port is used to connect to an external power source to provide the regulated voltage Vc.

[0071] In other possible embodiments, there are multiple harmonic suppression modules 140, and the adjustment voltage Vc input to the multiple control terminals 1401 corresponding to the multiple harmonic suppression modules 140 are different, so that the suppression signal generated by each harmonic suppression module 140 can be adjusted independently, which can further improve the suppression effect of harmonic signals. For example, the RF switch 100 can be integrated into a switch chip, and the multiple control terminals 1401 corresponding to the multiple harmonic suppression modules 140 can be connected to different power supply ports on the switch chip, so that the adjustment voltage Vc input to the multiple control terminals 1401 are different. Specifically, different power supply ports are used to connect to different external power supplies, and the voltage amplitude of the adjustment voltage Vc provided by the external power supply is different. For example, the adjustment voltage Vc can be 2.5V, 3V, 3.5V, etc.

[0072] In this embodiment, the first variable capacitance unit 1410 and the second variable capacitance unit 1420 can be implemented with the same structure so that the normal operation of the harmonic suppression module 140 will not be affected when the harmonic suppression module 140 is reverse connected.

[0073] Referring to Figure 5, the first varactor unit 1410 may include a first diode 1412, and the second varactor unit 1420 may include a second diode 1421. As shown in part (a) of Figure 5, the anode of the first diode 1412 is connected to the anode of the second diode 1421, the cathode of the first diode 1412 is connected to the first terminal 1212, and the cathode of the second diode 1421 is connected to the second terminal 1214. As shown in part (b) of Figure 5, the cathodes of the first diode 1412 and the second diode 1421 are connected, the anode of the first diode 1412 is connected to the first terminal 1212, and the anode of the second diode 1421 is connected to the second terminal 1214.

[0074] Specifically, the first diode 1412 and the second diode 1421 have the same parameters. These "parameters" can include the type and model of the diode, etc., to ensure good symmetry in the harmonic suppression module 140. Furthermore, diodes have the advantage of simple structure, which facilitates the miniaturization design of the RF switch 100. Specifically, both the first diode 1412 and the second diode 1421 can be varactor diodes.

[0075] Referring to Figure 6, the first varactor unit 1410 may include a first field-effect transistor 1414, and the second varactor unit 1420 may include a second field-effect transistor 1423. The source and drain of the first field-effect transistor 1414 are connected to form a first common terminal (not shown in the figure), and the source and drain of the second field-effect transistor 1423 are connected to form a second common terminal (not shown in the figure). As shown in part (a) of Figure 6, the first common terminal and the second common terminal are connected, the gate of the first field-effect transistor 1414 is connected to the first connection terminal 1212, and the gate of the second field-effect transistor 1423 is connected to the second connection terminal 1214. As shown in part (b) of Figure 6, the gate of the first field-effect transistor 1414 is connected to the gate of the second field-effect transistor 1423, the first common terminal is connected to the first connection terminal 1212, and the second common terminal is connected to the second connection terminal 1214. Therefore, the varactor unit in this embodiment is implemented using a field-effect transistor with its source and drain shorted. The first field-effect transistor 1414 and the second field-effect transistor 1423 can be respectively equivalent to an adjustable capacitor with an adjustable capacitance value to achieve the effect of suppressing harmonic signals.

[0076] Specifically, the parameters of the first field-effect transistor 1414 and the second field-effect transistor 1423 are identical. Here, "parameters" can include the type and model of the field-effect transistor, etc., to ensure good symmetry in the harmonic suppression module 140. For example, the first field-effect transistor 1414 and the second field-effect transistor 1423 can be a junction field-effect transistor (JFET), a metal-oxide-semiconductor field-effect transistor (MOSFET), a high electron mobility transistor (HEMT), a pseudo-high electron mobility transistor (PHEMT), etc.

[0077] It is not difficult to see that since the N transistors 120, the first field-effect transistor 1414 and the second field-effect transistor 1423 are all field-effect transistors, the N transistors 120, the first field-effect transistor 1414 and the second field-effect transistor 1423 can be integrated into the same switch chip (e.g., SOI chip) to improve the integration of the RF switch 100.

[0078] Referring to Figure 7, the harmonic suppression module 140 may further include a second resistor unit 1440 and a third resistor unit 1450. The second resistor unit 1440 is connected in series between the first varactor unit 1410 and the first connecting electrode 1212, and the third resistor unit 1450 is connected in series between the second varactor unit 1420 and the second connecting electrode 1214. The second resistor unit 1440 and the third resistor unit 1450 respectively function as voltage dividers to prevent an excessive voltage difference between the first connecting electrode 1212 and the second connecting electrode 1214, which could lead to breakdown of the first varactor unit 1410 and the second varactor unit 1420.

[0079] Specifically, the second resistor unit 1440 can be a single resistor or a resistor network formed by multiple resistors connected in series or parallel. The third resistor unit 1450 can be a single resistor or a resistor network formed by multiple resistors connected in series or parallel. This embodiment does not limit the specific implementation and resistance value of the second resistor unit 1440 and the third resistor unit 1450. In some possible embodiments, the resistance values ​​of the second resistor unit 1440 and the third resistor unit 1450 can be equal to ensure the structural symmetry of the harmonic suppression module 140.

[0080] In some possible embodiments, when the voltage between the first connection electrode 1212 and the second connection electrode 1214 is greater than or equal to a specified voltage, the number of the first varactor unit 1410 and the second varactor unit 1420 is multiple. The specified voltage can be greater than or equal to 15V, for example, it can be 15V, 16V, 18V, etc.

[0081] Referring to Figure 8, multiple first variable capacitance units 1410 are connected in series to form a first variable capacitance module 1416, and multiple second variable capacitance units 1420 are connected in series to form a second variable capacitance module 1425. The polarities of the two ends connecting adjacent first variable capacitance units 1410 and adjacent second variable capacitance units 1420 are different. In other words, multiple first variable capacitance units 1410 are connected in series in the same direction to form the first variable capacitance module 1416, and multiple second variable capacitance units 1420 are connected in series in the same direction to form the second variable capacitance module 1425. Furthermore, the first variable capacitance module 1416 and the second variable capacitance module 1425 are connected in series between a first connecting electrode 1212 and a second connecting electrode 1214. The polarity of the end of the first variable capacitance module 1416 connected to the first connecting electrode 1212 is the same as the polarity of the end of the second variable capacitance module 1425 connected to the second connecting electrode 1214. In other words, the first varactor module 1416 and the second varactor module 1425 are connected in reverse series between the first connection terminal 1212 and the second connection terminal 1214. Specifically, the multiple first varactor units 1410 and the multiple second varactor units 1420 can all be implemented using the same transistor, or they can all be implemented using the same field-effect transistor. This embodiment does not impose any limitation.

[0082] As shown in part (a) of Figure 8, when both the first varactor unit 1410 and the second varactor unit 1420 are transistors, in two adjacent first varactor units 1410, the anode of one transistor is connected to the cathode of the other transistor. Similarly, in two adjacent second varactor units 1420, the anode of one transistor is connected to the cathode of the other transistor. As shown in part (b) of Figure 8, when both the first varactor unit 1410 and the second varactor unit 1420 are field-effect transistors (FETs), in two adjacent first varactor units 1410, the gate of one FET is connected to a common terminal formed by shorting the source and drain of the other FET. Similarly, in two adjacent second varactor units 1420, the gate of one FET is connected to a common terminal formed by shorting the source and drain of the other FET.

[0083] Therefore, by providing multiple first varactor units 1410 and multiple second varactor units 1420, this embodiment allows for more flexible adjustment of the equivalent capacitance values ​​of the first varactor module 1416 and the second varactor module 1425. Furthermore, even if a single first varactor unit 1410 fails (e.g., short-circuit), the remaining first varactor units 1410 can still function as an adjustable capacitor to ensure the normal operation of the first varactor module 1416. Similarly, even if a single second varactor unit 1420 fails (e.g., short-circuit), the remaining second varactor units 1420 can still function as an adjustable capacitor to ensure the normal operation of the second varactor module 1425.

[0084] In some possible embodiments, when the first connection 1212 and the second connection 1214 belong to two adjacent transistors 120, the number of the first varactor unit 1410 and the second varactor unit 1420 is two. Here, "two adjacent transistors 120" refers to two transistors 120 directly connected in series. Since the two transistors 120 are directly connected in series, the voltage difference between the first connection 1212 and the second connection 1214 is small. By setting two first varactor units 1410 and two second varactor units 1420, a better harmonic suppression effect can be achieved, thereby saving layout space of the RF switch 100.

[0085] In some other possible embodiments, when the first connection 1212 and the second connection 1214 belong to two non-adjacent transistors 120, the number of the first varactor unit 1410 and the second varactor unit 1420 is greater than two. Here, "two non-adjacent transistors 120" means that other transistors 120 are connected in series between the two transistors 120 corresponding to the first connection 1212 and the second connection 1214 (as shown in the embodiment in Figure 3). In this case, the voltage difference between the first connection 1212 and the second connection 1214 is usually large, requiring more than two first varactor units 1410 and more than two second varactor units 1420. The multiple first varactor units 1410 and multiple second varactor units 1420 can act as voltage dividers to ensure the safe operation of the harmonic suppression module 140.

[0086] Referring to Figure 9, the number of harmonic suppression modules 140 is M, where M is less than N. For example, when N equals 6, M can be equal to 1, 2, 3, 4, or 5. The M harmonic suppression modules 140 are arranged sequentially in the direction from the first connection terminal 102 to the second connection terminal 104. One end of the first harmonic suppression module 140 is connected to the connection terminal 121 of the first transistor 120, and the other end of the first harmonic suppression module 140 is connected to the connection terminal 121 of the second transistor 120. When M is greater than 1, one end of the i-th harmonic suppression module 140 is connected to the connection terminal 121 of the i-th transistor 120, and the other end of the i-th harmonic suppression module 140 is connected to the connection terminal 121 of the (i+1)-th transistor 120. Here, i is greater than 1 and less than or equal to M.

[0087] In the embodiment shown in Figure 9, M equals 2, and two harmonic suppression modules 140 are sequentially arranged in the direction from the first connection terminal 102 to the second connection terminal 104. One end of the first harmonic suppression module 140 is connected to the connection terminal 121 of the first transistor 120, and the other end of the first harmonic suppression module 140 is connected to the connection terminal 121 of the second transistor 120. One end of the second harmonic suppression module 140 is connected to the connection terminal 121 of the second transistor 120, and the other end of the second harmonic suppression module 140 is connected to the connection terminal 121 of the third transistor 120.

[0088] It is easy to see that each harmonic suppression module 140 in Figure 9 is connected between the two connection terminals 121 of two adjacent transistors 120, and the multiple harmonic suppression modules 140 are arranged sequentially in the direction from the first connection terminal 102 to the second connection terminal 104. Therefore, by setting multiple harmonic suppression modules 140, this embodiment can further improve the suppression effect on harmonic signals.

[0089] It should be noted that in some possible scenarios, when the RF switch 100 is used in an RF front-end module, the first connection terminal 102 is suitable for connection to a port with a stronger RF signal, and the second connection terminal 104 is suitable for connection to a port with a weaker RF signal (e.g., ground). That is, the power of the RF signal at the first connection terminal 102 will be greater than the power of the RF signal at the second connection terminal 104. In this embodiment, by placing multiple harmonic suppression modules 140 closer to the first connection terminal 102, the suppression effect of the harmonic suppression modules 140 on harmonic signals can be improved, thereby ensuring the transmission quality of the RF signal. Here, "closer to the first connection terminal 102" means that the distance between the transistor 120 connected to the harmonic suppression module 140 and the first connection terminal 102 is less than the distance between the transistor 120 and the second connection terminal 104.

[0090] Please refer to Figure 10. The number of harmonic suppression modules 140 is K, where K is less than N. The K harmonic suppression modules 140 may include P first harmonic suppression submodules 1470 and Q second harmonic suppression submodules 1490. That is, K equals P + Q. For example, when N equals 6, K can be equal to 2, 3, 4, or 5.

[0091] In at least one embodiment, the structures of the "first harmonic suppression submodule" and the "second harmonic suppression submodule" may be different. In at least one embodiment, the structures of the "first harmonic suppression submodule" and the "second harmonic suppression submodule" may be the same.

[0092] It should be noted that the difference between "harmonic suppression module", "first harmonic suppression submodule" and "second harmonic suppression submodule" is only in the name and there is no difference in the hardware. In order to facilitate the description of the specific connection position of the K harmonic suppression modules, this application refers to a part of the K harmonic suppression modules as "first harmonic suppression submodule" and another part of the K harmonic suppression modules as "second harmonic suppression submodule".

[0093] P first harmonic suppression submodules 1470 are sequentially arranged in the direction from the first connection terminal 102 to the second connection terminal 104. One end of the first first harmonic suppression submodule 1470 is connected to the connection terminal 121 of the first transistor 120, and the other end of the first first harmonic suppression submodule 1470 is connected to the connection terminal 121 of the second transistor 120. One end of the i-th first harmonic suppression submodule 1470 is connected to the connection terminal 121 of the i-th transistor 120, and the other end of the i-th first harmonic suppression submodule 1470 is connected to the connection terminal 121 of the (i+1)-th transistor 120. Here, i is greater than 1 and less than or equal to P. Q second harmonic suppression submodules 1490 are sequentially arranged in the direction from the second connection terminal 104 to the first connection terminal 102. In this configuration, one end of the first second harmonic suppression submodule 1490 is connected to the connection terminal 121 of the (N-1)th transistor 120, and the other end of the first second harmonic suppression submodule 1490 is connected to the connection terminal 121 of the Nth transistor 120. One end of the j-th second harmonic suppression submodule 1490 is connected to the connection terminal 121 of the Nj-th transistor 120, and the other end of the j-th second harmonic suppression submodule 1490 is connected to the connection terminal 121 of the (N-j+1)-th transistor 120. Here, j is greater than 1 and less than or equal to Q.

[0094] The "i-th transistor" and "j-th transistor" mentioned above are transistors that are sequentially labeled based on the direction from the first connection terminal 102 to the second connection terminal 104. Specifically, the "first transistor" refers to the transistor directly connected to the first connection terminal 102, and the "N-th transistor" refers to the transistor directly connected to the second connection terminal 104.

[0095] In the embodiment shown in Figure 10, K equals 4, P and Q are both equal to 2, and two first harmonic suppression submodules 1470 are sequentially arranged in the direction from the first connection terminal 102 to the second connection terminal 104. One end of the first harmonic suppression submodule 1470 is connected to the connection terminal 121 of the first transistor 120, and the other end is connected to the connection terminal 121 of the second transistor 120. One end of the second harmonic suppression submodule 1470 is connected to the connection terminal 121 of the second transistor 120, and the other end is connected to the connection terminal 121 of the third transistor 120. Two second harmonic suppression submodules 1490 are sequentially arranged in the direction from the second connection terminal 104 to the first connection terminal 102. In this configuration, one end of the first second harmonic suppression submodule 1490 is connected to the connection terminal 121 of the (N-1)th transistor 120, and the other end of the first second harmonic suppression submodule 1490 is connected to the connection terminal 121 of the Nth transistor 120. One end of the second second harmonic suppression submodule 1490 is connected to the connection terminal 121 of the (N-2)th transistor 120, and the other end of the second second harmonic suppression submodule 1490 is connected to the connection terminal 121 of the (N-1)th transistor 120.

[0096] It is easy to see that each harmonic suppression module 140 in Figure 10 is connected between the two connection poles 121 corresponding to two adjacent transistors 120, and multiple harmonic suppression modules 140 are distributed at both ends of the RF switch 100. Therefore, when the RF switch 100 is used in the RF front-end module, whether the RF signal is transmitted from the first connection terminal 102 to the second connection terminal 104 or from the second connection terminal 104 to the first connection terminal 102, the multiple harmonic suppression modules 140 can achieve a good harmonic suppression effect to ensure the normal transmission of the RF signal.

[0097] In summary, in the two embodiments corresponding to Figures 9 and 10, placing multiple harmonic suppression modules 140 at one or both ends of the main RF path of the RF switch 100 further improves the harmonic suppression effect compared to placing them in the middle region of the main RF path. Here, "main RF path" refers to the series branch formed by N transistors 120 connected in series.

[0098] The first embodiment of this application provides a radio frequency (RF) switch 100, which may include N transistors 120 connected in series and at least one harmonic suppression module 140. Here, N is an integer greater than 1. The harmonic suppression module 140 is connected between the two terminals 121 corresponding to two of the transistors 120, and is used to suppress harmonic signals in the RF signal passing through the RF switch 100. Specifically, the harmonic suppression module 140 can generate a suppression signal with a phase opposite to the harmonic signal in the RF signal. This suppression signal can cancel out the harmonic signal, thereby suppressing or even eliminating the harmonic signal and ensuring the transmission quality of the RF signal.

[0099] Furthermore, transistor 120 is a field-effect transistor, wherein the two connection terminals 121 corresponding to the two transistors 120 are two bodies or two gates. Since the harmonic suppression module 140 in this application is not directly connected to the main RF path (that is, not directly connected to the source or drain of the field-effect transistor), but is connected between the two bodies or two gates, the above connection method can avoid the situation where other harmonic signals generated by the harmonic suppression module 140 itself affect the main RF path, thereby ensuring that the RF signal can be transmitted normally on the main RF path.

[0100] Referring to Figure 11, a second embodiment of this application provides a radio frequency (RF) switch 100, which may include N transistors 120 connected in series and at least one harmonic suppression module 140. Here, N is an integer greater than 1. Specifically, N can be equal to 6, 8, 9, 10, 12, 15, 20, etc. In some possible embodiments, researchers can determine the value of N based on the voltage across the RF switch 100 and the withstand voltage of a single transistor 120. For example, if the voltage across the RF switch 100 is 45V and the withstand voltage of a single transistor 120 is 6V, then N can be 8. In other possible embodiments, researchers can determine the value of N based on the actual application scenario of the RF switch 100. For example, when the RF switch 100 is used as a switch in a receiving or transmitting link, the value of N can be greater than or equal to 6 and less than or equal to 9. As another example, when the RF switch 100 is used as a tuner switch, the value of N can be greater than or equal to 10 and less than or equal to 20.

[0101] The harmonic suppression module 140 is connected between the two terminals 121 corresponding to the two transistors 120, and is used to suppress harmonic signals in the radio frequency signal passing through the radio frequency switch 100. Specifically, the harmonic suppression module 140 can generate a suppression signal that is out of phase with the harmonic signal in the radio frequency signal. This suppression signal can cancel out the harmonic signal, thereby suppressing or even eliminating the harmonic signal and ensuring the transmission quality of the radio frequency signal.

[0102] Further, in the embodiment shown in FIG11, transistor 120 is a bipolar transistor, wherein the two connection terminals 121 corresponding to the two transistors 120 are two body terminals or two base terminals. In the embodiment shown in FIG11, the harmonic suppression module 140 can be connected between the two body terminals corresponding to the two bipolar transistors. Referring to FIG12, the harmonic suppression module 140 can be connected between the two base terminals corresponding to the two bipolar transistors.

[0103] It should be noted that, in addition to generating the suppression signal, the harmonic suppression module 140 also generates other harmonic signals (i.e., harmonic signals other than the suppression signal). Since the harmonic suppression module 140 in this application is not directly connected to the main RF path (i.e., not directly connected to the collector or emitter of the bipolar transistor), but rather connected between the two body electrodes or the two base electrodes, this connection method can prevent other harmonic signals generated by the harmonic suppression module 140 itself from affecting the main RF path, thus ensuring that the RF signal can be transmitted normally on the main RF path.

[0104] Taking the third harmonic signal in the RF signal passing through RF switch 100 as an example, the harmonic suppression module 140 can generate a suppression signal with the opposite phase to the third harmonic signal (i.e., an inverted signal of the third harmonic signal) to suppress the third harmonic signal. Furthermore, since the harmonic suppression module 140 itself generates other harmonic signals (e.g., fourth and fifth harmonic signals), and since the harmonic suppression module 140 is not directly connected to the main RF path, the fourth and fifth harmonic signals generated by the harmonic suppression module 140 itself can be prevented from affecting the main RF path, thereby ensuring the transmission quality of the RF signal.

[0105] The specific implementation of the radio frequency switch 100 is explained below.

[0106] In this embodiment, the radio frequency switch 100 may have a first connection terminal 102 and a second connection terminal 104, and N transistors 120 are connected in series between the first connection terminal 102 and the second connection terminal 104. The transistors 120 are bipolar transistors; specifically, in two adjacent bipolar transistors, the collector of one bipolar transistor is connected to the emitter of the other bipolar transistor.

[0107] For example, transistor 120 can be a bipolar junction transistor (BJT) or a heterojunction bipolar transistor (HBT). Of course, transistor 120 can also be other types of bipolar transistors, and this embodiment is not specifically limited. Optionally, transistor 120 can be formed on a conventional silicon substrate or on a silicon-on-insulator (SOI) substrate.

[0108] In this embodiment, the harmonic suppression module 140 is connected between the two bodies or two bases corresponding to the two transistors 120, and is used to suppress harmonic signals in the radio frequency signal passing through the radio frequency switch 100. The specific connection position of the harmonic suppression module 140 can be flexibly adjusted by the researchers based on the specific layout of the switch chip containing the N transistors 120; this embodiment does not impose a specific limitation.

[0109] In the embodiments shown in Figures 11 and 12, the harmonic suppression module 140 is connected between the two connection terminals 121 corresponding to two adjacent transistors 120. Since the voltage difference between the two connection terminals 121 corresponding to two adjacent transistors 120 is small, the safety of the harmonic suppression module 140 can be guaranteed, avoiding the situation where the voltage difference is too large and the module is broken down.

[0110] In some other possible embodiments, the harmonic suppression module 140 may be connected between the two connection poles 121 corresponding to two non-adjacent transistors 120. For example, if the harmonic suppression module 140 has good withstand voltage performance, one or more transistors 120 may be spaced apart between the two transistors 120 connected to the harmonic suppression module 140, so that the layout of the harmonic suppression module 140 in the RF switch 100 can be more flexible.

[0111] In some possible embodiments, when there are multiple harmonic suppression modules 140, the two transistors 120 connected to some harmonic suppression modules 140 can be two body electrodes, while the two transistors 120 connected to other harmonic suppression modules 140 can be two base electrodes. Researchers can adjust the connection positions of the harmonic suppression modules 140 according to the actual layout of the RF chip 100; this embodiment does not impose specific limitations.

[0112] The specific implementation of the harmonic suppression module 140 can be referred to and followed in the first embodiment above. In the absence of conflict, the relevant features in the first embodiment above can be combined with this embodiment. To save space, they will not be repeated here.

[0113] Referring to Figure 13, this application embodiment also provides a radio frequency (RF) front-end module 200. The RF front-end module 200 is a component that integrates two or more discrete devices, such as RF switches, low-noise amplifiers, filters, duplexers, and power amplifiers, into a single independent module, thereby improving integration and hardware performance, and miniaturizing the size. Specifically, the RF front-end module 200 can be applied to wireless communication devices such as smartphones, tablets, and smartwatches to achieve the reception and transmission of RF signals. Furthermore, with the development of 5G technology, the performance requirements for RF front-end modules are becoming increasingly stringent. The technical solution in this application can be applied to 5G RF front-end modules to improve the communication performance of 5G communication devices.

[0114] In this embodiment, the RF front-end module 200 is provided with an antenna port 201 for connecting the antenna ANT. The RF front-end module 200 may include multiple parallel first tuning branches 203. Each first tuning branch 203 may include a first switch 210, which has a first connection terminal 102 for connecting to the antenna port 201 and a second connection terminal 104 for grounding. Therefore, the first switch 210 in this embodiment is a tuner switch. Specifically, N is greater than or equal to 10 and less than or equal to 20. For example, N can take values ​​of 10, 12, 15, 18, 20, etc.

[0115] In this embodiment, the first switch 210 may include N transistors (not shown in the figure) and at least one harmonic suppression module (not shown in the figure). The N transistors are connected in series between the first connection terminal 102 and the second connection terminal 104, where N is an integer greater than 1. The harmonic suppression module is connected between the two connection terminals corresponding to two of the transistors. The harmonic suppression module is used to suppress harmonic signals in the radio frequency signal passing through the first switch 210. Specifically, the harmonic suppression module can generate a suppression signal that is out of phase with the harmonic signal in the radio frequency signal. This suppression signal can cancel out the harmonic signal, thereby suppressing or even eliminating the harmonic signal and ensuring the transmission quality of the radio frequency signal.

[0116] Specifically, in some possible embodiments, the transistor is a field-effect transistor, where the two terminals corresponding to two transistors are either the two body terminals or the two gate terminals. In other possible embodiments, the transistor is a bipolar junction transistor (BJT), where the two terminals corresponding to two transistors are either the two body terminals or the two base terminals.

[0117] For details on the implementation of the first switch 210, please refer to the description of the RF switch 100 in the above embodiment. Without conflict, the features of the transistor and harmonic suppression module in the above embodiment can be incorporated into this embodiment; for brevity, they will not be repeated here.

[0118] In this embodiment, one of the harmonic suppression modules is connected to the connection terminal of the first transistor in the direction from the first connection terminal 102 of the first switch 210 to the second connection terminal 104. The connection position of the harmonic suppression module can be referred to the relevant description in the embodiment shown in Figure 9. Since the first connection terminal 102 of the first switch 210 is used to connect to the RF port 201, the power of the RF signal at the first connection terminal 102 is greater than the power of the RF signal at the second connection terminal 104. By placing the harmonic suppression module close to the first connection terminal 102 of the first switch 210, this embodiment can improve the suppression effect of the harmonic suppression module on harmonic signals, thereby ensuring the transmission quality of the RF signal.

[0119] In this embodiment, each first tuning branch 203 may further include a tuning element 230, which is connected in series with a corresponding first switch 210 to form the first tuning branch 203. The tuning element 230 is used to adjust the output impedance of the radio frequency signal so that the antenna has high signal transmission power in any frequency band. Specifically, the tuning element 230 may include at least one of an inductor and a capacitor. In some possible embodiments, the tuning element 230 may be a single capacitor or a single inductor; in other possible embodiments, the tuning element 230 may also be a matching circuit composed of a capacitor and an inductor. Specifically, the tuning elements 230 included in different first tuning branches 203 may adopt different hardware parameters so that when the first switch 210 in different first tuning branches 203 is in the on state, different tuning effects on the radio frequency signal can be achieved.

[0120] In the embodiment shown in Figure 13, one end of the tuning element 230 is connected to the radio frequency port 201, and the other end of the tuning element 230 is connected to the first connection terminal 102 of the first switch 210, while the second connection terminal 104 of the first switch 210 is grounded. In some other possible embodiments, the first connection terminal 102 of the first switch 210 is connected to the radio frequency port 201, the second connection terminal 104 of the first switch 210 is connected to one end of the tuning element 230, and the other end of the tuning element 230 is grounded. This embodiment does not limit the specific connection position of the tuning element 230.

[0121] In this embodiment, the RF front-end module 200 also includes a signal port 205, which is connected to the antenna port 201. The signal port 205 can be used to connect the transmit link and / or receive link in the RF front-end module. On one hand, the RF signal received by the antenna ANT can be transmitted sequentially to the receive link in the RF front-end module via the antenna port 201 and the signal port 205. On the other hand, the RF signal processed by the transmit link in the RF front-end module can be transmitted to the antenna ANT via the signal port 205 and the antenna port 201. The RF front-end module 200 can select and turn on the first switch 210 in the corresponding first tuning branch 203 according to the frequency of the currently transmitted or received signal, thereby achieving impedance matching for multiple RF signals of different frequency bands. Specifically, since the output impedance of the transmit link is constant, while the input impedance of the antenna changes significantly with frequency, multiple first tuning branches 203 need to be set between the transmit link and the antenna to achieve impedance matching between the transmit link and the antenna, so that RF signals of different frequency bands can achieve high radiated power during transmission.

[0122] Specifically, the transmit link may include components such as power amplifiers, switches, filters / duplexers / multiplexers, etc., and the receive link may include components such as low-noise amplifiers, switches, filters / duplexers / multiplexers, etc. The transmit and receive links may share at least some components (e.g., switches, filters / duplexers / multiplexers), or they may not share components; this embodiment does not limit this.

[0123] Referring to Figure 14, this application embodiment also provides a radio frequency (RF) front-end module 200. The RF front-end module 200 is a component that integrates two or more discrete devices, such as RF switches, low-noise amplifiers, filters, duplexers, and power amplifiers, into a single independent module, thereby improving integration and hardware performance, and miniaturizing the size. Specifically, the RF front-end module 200 can be applied to wireless communication devices such as smartphones, tablets, and smartwatches to achieve the reception and transmission of RF signals. Furthermore, with the development of 5G technology, the performance requirements for RF front-end modules are becoming increasingly stringent. The technical solution in this application can be applied to 5G RF front-end modules to improve the communication performance of 5G communication devices.

[0124] In this embodiment, the RF front-end module 200 includes a signal port 205 and an antenna port 201 for connecting the antenna ANT. The RF front-end module 200 may include multiple parallel second tuning branches 207. Each second tuning branch 207 may include a second switch 220, which has a first connection terminal 102 for connecting to the antenna port 201 and a second connection terminal 104 for connecting to the signal port 205. Therefore, in this embodiment, the second switch 220 is an RF switch in the receiving link or transmitting link. Specifically, N is greater than or equal to 6 and less than or equal to 10. For example, N can take values ​​of 6, 8, 9, 10, etc.

[0125] In this embodiment, the second switch 220 may include N transistors (not shown in the figure) and at least one harmonic suppression module (not shown in the figure). The N transistors are connected in series between the first connection terminal 102 and the second connection terminal 104, where N is an integer greater than 1. The harmonic suppression module is connected between the two connection terminals corresponding to two of the transistors. The harmonic suppression module is used to suppress harmonic signals in the radio frequency signal passing through the second switch 220. Specifically, the harmonic suppression module can generate a suppression signal that is out of phase with the harmonic signal in the radio frequency signal. This suppression signal can cancel out the harmonic signal, thereby suppressing or even eliminating the harmonic signal and ensuring the transmission quality of the radio frequency signal.

[0126] Specifically, in some possible embodiments, the transistor is a field-effect transistor, where the two terminals corresponding to two transistors are either the two body terminals or the two gate terminals. In other possible embodiments, the transistor is a bipolar junction transistor (BJT), where the two terminals corresponding to two transistors are either the two body terminals or the two base terminals.

[0127] For details on the implementation of the second switch 220, please refer to the description of the RF switch 100 in the above embodiment. Without conflict, the features of the transistor and harmonic suppression module in the above embodiment can be incorporated into this embodiment; for brevity, they will not be repeated here.

[0128] In this embodiment, one of the harmonic suppression modules is connected to the connection terminal of the first transistor in the direction from the first connection terminal 102 of the second switch 220 to the second connection terminal 104. The connection position of the harmonic suppression module can be referred to the relevant description in the embodiment shown in Figure 9. Since the first connection terminal 102 of the second switch 220 is used to connect to the RF port 201, the power of the RF signal at the first connection terminal 102 is greater than the power of the RF signal at the second connection terminal 104. By placing the harmonic suppression module close to the first connection terminal 102 of the second switch 220, this application can improve the suppression effect of the harmonic suppression module on harmonic signals, thereby ensuring the transmission quality of the RF signal.

[0129] In this embodiment, each second tuning branch 207 may further include a tuning element 230, which is connected in series with a corresponding second switch 220 to form the second tuning branch 207. The tuning element 230 is used to adjust the output impedance of the radio frequency signal so that the antenna has high signal transmission power in any frequency band. Specifically, the tuning element 230 may include at least one of an inductor and a capacitor. For a detailed description of the tuning element 230, please refer to the detailed description in the above embodiments, which will not be repeated here.

[0130] In the embodiment shown in Figure 14, one end of the tuning element 230 is connected to the radio frequency port 201, the other end of the tuning element 230 is connected to the first connection terminal 102 of the second switch 220, and the second connection terminal 104 of the second switch 220 is connected to the signal port 205. In some other possible embodiments, the first connection terminal 102 of the second switch 220 is connected to the radio frequency port 201, the second connection terminal 104 of the second switch 220 is connected to one end of the tuning element 230, and the other end of the tuning element 230 is connected to the signal port 205. This embodiment does not limit the specific connection position of the tuning element 230.

[0131] In this embodiment, signal port 205 can be used to connect the transmit link and / or receive link in the RF front-end module. For a detailed description of signal port 205, the transmit link, and the receive link, please refer to the detailed description in the above embodiments; it will not be repeated here.

[0132] Referring to Figure 15, this embodiment also provides an electronic device 500, which can be a 4G or 5G communication device such as a smartphone, tablet, or smartwatch. Specifically, the electronic device 500 may include the radio frequency switch 100 in the above embodiment, or the radio frequency front-end module 200 in the above embodiment, to realize the reception and transmission of radio frequency signals.

[0133] Furthermore, with the development of 5G technology, the requirements for the performance of radio frequency front-end modules are becoming increasingly stringent. The technical solution of this application can be applied to 5G radio frequency front-end modules to improve the communication performance of 5G communication equipment.

[0134] In this application specification, certain terms are used to refer to specific components. Those skilled in the art will understand that hardware manufacturers may use different names to refer to the same component. The specification and claims do not distinguish components based on differences in name, but rather on differences in function. The term "comprising" throughout the specification and claims is an open-ended term and should be interpreted as "including but not limited to"; "generally" means that those skilled in the art can solve the technical problem within a certain margin of error and basically achieve the technical effect.

[0135] In the description of this application, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "inside", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the purpose of simplifying the description of this application and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0136] In this application, unless otherwise expressly specified or limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or merely surface contact. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0137] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0138] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0139] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A radio frequency switch, wherein, include: N transistors connected in series, where N is an integer greater than 1; as well as At least one harmonic suppression module is provided, the harmonic suppression module being connected between the two terminals corresponding to two transistors, the harmonic suppression module being used to suppress harmonic signals in the radio frequency signal passing through the radio frequency switch; wherein, the transistors are field-effect transistors, and the two terminals corresponding to the two transistors are two body terminals or two gate terminals.

2. The radio frequency switch according to claim 1, wherein, The harmonic suppression module is used to generate a suppression signal, which is out of phase with the harmonic signal in the radio frequency signal.

3. The radio frequency switch according to claim 1, wherein, The harmonic suppression module is connected between the two terminals of two adjacent transistors.

4. The radio frequency switch according to claim 1, wherein, The at least one harmonic suppression module includes a first harmonic suppression module and a second harmonic suppression module; The first harmonic suppression module is connected between the two body electrodes corresponding to two of the transistors, and the second harmonic suppression module is connected between the two gate electrodes corresponding to any other two transistors. Alternatively, the first harmonic suppression module is connected between the two body electrodes corresponding to two of the transistors, and the second harmonic suppression module is connected between the two body electrodes corresponding to any other two transistors. Alternatively, the first harmonic suppression module is connected between the two gates corresponding to two of the transistors, and the second harmonic suppression module is connected between the two gates corresponding to any other two transistors.

5. The radio frequency switch according to claim 1, wherein, The harmonic suppression module includes a first varactor unit and a second varactor unit, wherein the two terminals corresponding to the two transistors include a first terminal and a second terminal. The first variable capacitance unit and the second variable capacitance unit are connected in series between the first connection electrode and the second connection electrode; wherein, the polarity of the end of the first variable capacitance unit used to connect to the first connection electrode and the polarity of the end of the second variable capacitance unit used to connect to the second connection electrode are the same.

6. The radio frequency switch according to claim 5, wherein, The harmonic suppression module is provided with a control terminal, which is used to input the regulating voltage. The harmonic suppression module further includes a first resistor unit, one end of which is connected to the control terminal, and the other end of which is connected to a common connection terminal formed by the connection of the first variable capacitance unit and the second variable capacitance unit.

7. The radio frequency switch according to claim 6, wherein, The number of harmonic suppression modules is multiple, and the adjustment voltage input to the multiple control terminals corresponding to the multiple harmonic suppression modules is the same voltage.

8. The radio frequency switch according to claim 6, wherein, The number of harmonic suppression modules is multiple, and the adjustment voltages input to the multiple control terminals corresponding to the multiple harmonic suppression modules are all different.

9. The radio frequency switch according to claim 5, wherein, The first varactor unit includes a first diode, and the second varactor unit includes a second diode; The anode of the first diode is connected to the anode of the second diode, the cathode of the first diode is connected to the first terminal, and the cathode of the second diode is connected to the second terminal; or The cathode of the first diode is connected to the cathode of the second diode, the anode of the first diode is connected to the first terminal, and the anode of the second diode is connected to the second terminal.

10. The radio frequency switch according to claim 9, wherein, Both the first diode and the second diode are varactor diodes.

11. The radio frequency switch according to claim 5, wherein, The first varactor unit includes a first field-effect transistor, and the second varactor unit includes a second field-effect transistor; the source and drain of the first field-effect transistor are connected to form a first common terminal, and the source and drain of the second field-effect transistor are connected to form a second common terminal; The first common terminal is connected to the second common terminal, the gate of the first field-effect transistor is connected to the first connection terminal, and the gate of the second field-effect transistor is connected to the second connection terminal; or The gate of the first field-effect transistor is connected to the gate of the second field-effect transistor, the first common terminal is connected to the first connection electrode, and the second common terminal is connected to the second connection electrode.

12. The radio frequency switch according to claim 5, wherein, The harmonic suppression module further includes a second resistor unit and a third resistor unit; The second resistor unit is connected in series between the first varactor unit and the first connecting electrode; the third resistor unit is connected in series between the second varactor unit and the second connecting electrode.

13. The radio frequency switch according to claim 5, wherein, When the voltage between the first connection electrode and the second connection electrode is greater than or equal to a specified voltage, the number of both the first varactor unit and the second varactor unit is multiple. Multiple first variable capacitance units are connected in series to form a first variable capacitance module, and multiple second variable capacitance units are connected in series to form a second variable capacitance module; wherein, the polarities of the two ends used to connect two adjacent first variable capacitance units are different, and the polarities of the two ends used to connect two adjacent second variable capacitance units are different. The first variable capacitance module and the second variable capacitance module are connected in series between the first connection electrode and the second connection electrode; wherein, the polarity of the end of the first variable capacitance module used to connect to the first connection electrode and the polarity of the end of the second variable capacitance module used to connect to the second connection electrode are the same.

14. The radio frequency switch according to claim 13, wherein, The specified voltage is greater than or equal to 15V.

15. The radio frequency switch according to claim 13, wherein, When the first connection electrode and the second connection electrode belong to two adjacent transistors, the number of the first varactor unit and the number of the second varactor unit are both two. When the first connection electrode and the second connection electrode belong to two non-adjacent transistors, the number of the first varactor unit and the second varactor unit is greater than two.

16. The radio frequency switch according to any one of claims 1 to 15, wherein, The radio frequency switch is further provided with a first connection terminal and a second connection terminal, and N transistors are connected in series between the first connection terminal and the second connection terminal. The number of harmonic suppression modules is M, where M is less than N; the M harmonic suppression modules are arranged sequentially in the direction from the first connection terminal to the second connection terminal; wherein, one end of the first harmonic suppression module is connected to the connection terminal of the first transistor, and the other end of the first harmonic suppression module is connected to the connection terminal of the second transistor; one end of the i-th harmonic suppression module is connected to the connection terminal of the i-th transistor, and the other end of the i-th harmonic suppression module is connected to the connection terminal of the (i+1)-th transistor; wherein i is greater than 1 and less than or equal to M.

17. The radio frequency switch according to any one of claims 1 to 15, wherein, The radio frequency switch is further provided with a first connection terminal and a second connection terminal, and N transistors are connected in series between the first connection terminal and the second connection terminal. The number of harmonic suppression modules is K, where K is less than N; the K harmonic suppression modules include P first harmonic suppression sub-modules and Q second harmonic suppression sub-modules; P first harmonic suppression submodules are sequentially arranged in the direction from the first connection terminal to the second connection terminal; wherein, one end of the first first harmonic suppression submodule is connected to the connection terminal of the first transistor, and the other end of the first first harmonic suppression submodule is connected to the connection terminal of the second transistor; one end of the i-th first harmonic suppression submodule is connected to the connection terminal of the i-th transistor, and the other end of the i-th first harmonic suppression submodule is connected to the connection terminal of the (i+1)-th transistor; wherein, i is greater than 1 and less than or equal to P; Q second harmonic suppression submodules are sequentially arranged in the direction from the second connection terminal to the first connection terminal; wherein, one end of the first second harmonic suppression submodule is connected to the connection terminal of the (N-1)th transistor, and the other end of the first second harmonic suppression submodule is connected to the connection terminal of the Nth transistor; one end of the jth second harmonic suppression submodule is connected to the connection terminal of the Njth transistor, and the other end of the jth second harmonic suppression submodule is connected to the connection terminal of the (N-j+1)th transistor; wherein, j is greater than 1 and less than or equal to Q.

18. A radio frequency switch, wherein, include: N transistors connected in series, where N is an integer greater than 1; as well as At least one harmonic suppression module is provided, the harmonic suppression module being connected between the two terminals corresponding to two transistors, the harmonic suppression module being used to suppress harmonic signals in the radio frequency signal passing through the radio frequency switch; wherein, the transistors are bipolar transistors, and the two terminals corresponding to the two transistors are two body terminals or two base terminals.

19. The radio frequency switch according to claim 18, wherein, The harmonic suppression module is used to generate a suppression signal, which is out of phase with the harmonic signal in the radio frequency signal.

20. The radio frequency switch according to claim 19, wherein, The harmonic suppression module is connected between the two terminals of two adjacent transistors.

21. A radio frequency front-end module, wherein, An antenna port is provided for connecting an antenna; the radio frequency front-end module includes multiple first tuning branches connected in parallel; Each of the first tuning branches includes a first switch, the first switch having a first connection terminal for connecting to the antenna port and a second connection terminal for grounding; the first switch includes N transistors and at least one harmonic suppression module, the N transistors being connected in series between the first connection terminal and the second connection terminal, where N is an integer greater than 1; The harmonic suppression module is connected between the two terminals corresponding to the two transistors, and the harmonic suppression module is used to suppress harmonic signals in the radio frequency signal passing through the first switch; One of the harmonic suppression modules is connected to the terminal of the first transistor in the direction from the first terminal of the first switch to the second terminal.

22. The radio frequency front-end module according to claim 21, wherein, Each of the first tuning branches further includes a tuning element, the tuning element comprising at least one of an inductor and a capacitor; The tuning element and the corresponding first switch are connected in series to form the first tuning branch.

23. The radio frequency front-end module according to claim 21 or 22, wherein, When the transistor is a field-effect transistor, the two terminals corresponding to two transistors are either two body terminals or two gate terminals; when the transistor is a bipolar transistor, the two terminals corresponding to two transistors are either two body terminals or two base terminals.

24. The radio frequency front-end module according to claim 21 or 22, wherein, The N is greater than or equal to 10 and less than or equal to 20.

25. A radio frequency front-end module, wherein, It is equipped with a signal port and an antenna port for connecting an antenna; the radio frequency front-end module includes multiple parallel second tuning branches; Each of the second tuning branches includes a second switch, the second switch having a first connection terminal for connecting to the antenna port and a second connection terminal for connecting to the signal port; the second switch includes N transistors and at least one harmonic suppression module, the N transistors being connected in series between the first connection terminal and the second connection terminal, where N is an integer greater than 1; The harmonic suppression module is connected between the two terminals corresponding to the two transistors, and the harmonic suppression module is used to suppress harmonic signals in the radio frequency signal passing through the second switch; One of the harmonic suppression modules is connected to the terminal of the first transistor in the direction from the first terminal of the second switch to the second terminal.

26. The radio frequency front-end module according to claim 25, wherein, Each of the second tuning branches further includes a tuning element, the tuning element comprising at least one of an inductor and a capacitor; The tuning element and the corresponding second switch are connected in series to form the second tuning branch.

27. The radio frequency front-end module according to claim 25 or 26, wherein, When the transistor is a field-effect transistor, the two terminals corresponding to two transistors are either two body terminals or two gate terminals; when the transistor is a bipolar transistor, the two terminals corresponding to two transistors are either two body terminals or two base terminals.

28. The radio frequency front-end module according to claim 25 or 26, wherein, The N is greater than or equal to 6 and less than or equal to 10.

29. An electronic device, wherein, include: The radio frequency switch as described in any one of claims 1 to 20; Or the radio frequency front-end module as described in any one of claims 21 to 28.

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