Semiconductor device and method for fabricating semiconductor device

Abstract

This semiconductor device (100) comprises an element body (10), a capacitor part (30), and an inductor part (50). The capacitor part (30) and the inductor part (50) are located inside the element body (10). The capacitor part (30) comprises an aluminum oxide body (41), a first electrode layer (46), a dielectric layer (48), and a second electrode layer (47). The first electrode layer (46), the dielectric layer (48), and the second electrode layer (47) are layered along the outer surface of the aluminum oxide body (41) on a third positive direction (ZA) side, and along the inner surfaces of a plurality of holes (42) in the aluminum oxide body (41). The inductor part (50) comprises an inductor interconnect (51) that turns about a turning axis parallel to a first main surface (100A). The inductor interconnect (51) is located in a layer different from that of the capacitor part (30) in a direction orthogonal to the first main surface (100A), and overlaps the capacitor part (30) in a perspective view of the semiconductor device (100) facing the third positive direction (ZA).

Description

Semiconductor device and method for manufacturing semiconductor device

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing a semiconductor device.

[0002] The semiconductor device of Patent Document 1 includes a body, a capacitor, and an inductor. The capacitor is located inside the body. The inductor is located inside the body.

[0003] Japanese Patent Application Laid-Open No. 2023-550774

[0004] In a semiconductor device such as that of Patent Document 1, there may be a case where it is desired to increase the capacitance value of the capacitor. In this case, it is conceivable to increase the area of the electrode layer of the capacitor. However, in order to increase the area of the electrode layer of the capacitor, the dimensions of the semiconductor device in the direction parallel to the main surface of the semiconductor device have to be increased. In this case, the mounting area required to mount the semiconductor device on a substrate or the like becomes large, which is not preferable.

[0005] A semiconductor device for solving the above problems includes a body having a planar main surface, a capacitor portion located inside the body, and an inductor portion located inside the body. When a specific direction orthogonal to the main surface is defined as the positive direction and the direction opposite to the positive direction is defined as the negative direction, the capacitor portion includes an aluminum oxide body having a plurality of hole portions extending from the outer surface on the positive direction side to the negative direction side, a first electrode layer laminated on the outer surface on the positive direction side of the aluminum oxide body and the inner surfaces of the plurality of hole portions, a dielectric layer laminated on the side opposite to the aluminum oxide body with respect to the first electrode layer, and a second electrode layer laminated on the side opposite to the first electrode layer with respect to the dielectric layer. The inductor portion includes an inductor wiring that turns around a turning axis parallel to the main surface. The inductor wiring is located in a layer different from the capacitor portion in the direction orthogonal to the main surface and overlaps the capacitor portion when viewed through in the positive direction.

[0006] A method for manufacturing a semiconductor device to solve the above problems comprises: an intermediate formation step of forming an intermediate mainly composed of aluminum on the main surface of a base substrate; an anodic oxidation step, performed after the intermediate formation step, in which, when the direction from the base substrate toward the intermediate is defined as the positive direction and the opposite direction is defined as the negative direction, a part or all of the intermediate is converted into an aluminum oxide body having a plurality of holes extending from the outer surface on the positive direction side to the negative direction by an anodic oxidation method; a first electrode layer formation step, performed after the anodic oxidation step, in which a first electrode layer is laminated on the outer surface on the positive direction side and on the inner surfaces of the plurality of holes of the aluminum oxide body; a dielectric layer formation step, performed after the first electrode layer formation step, in which a dielectric layer is laminated on the side of the first electrode layer opposite to the aluminum oxide body; a second electrode layer formation step, performed after the dielectric layer formation step, in which a second electrode layer is laminated on the side of the dielectric layer opposite to the first electrode layer; and a wiring formation step, performed after the second electrode layer formation step, inductor wiring is formed on the positive direction side of the second electrode layer.

[0007] With the above configuration, it is possible to suppress the increase in the dimensions of the semiconductor device in the direction parallel to the main surface due to an increase in the capacitance value of the capacitor. Moreover, with the above configuration, it is possible to suppress the increase in the dimensions of the semiconductor device in the direction parallel to the main surface compared to, for example, when the inductor wiring and the capacitor section are located on the same layer in a direction perpendicular to the main surface.

[0008] Figure 1 is a cross-sectional view of a semiconductor device according to the first embodiment. Figure 2 is a cross-sectional view of the semiconductor device according to the first embodiment along the line 2-2 in Figure 1. Figure 3 is a cross-sectional view of the semiconductor device according to the first embodiment along the line 3-3 in Figure 1. Figure 4 is a flowchart showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 5 is an explanatory diagram showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 6 is an explanatory diagram showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 7 is an explanatory diagram showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 8 is an explanatory diagram showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 9 is an explanatory diagram showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 10 is an explanatory diagram showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 11 is an explanatory diagram showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 12 is an explanatory diagram showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 13 is an explanatory diagram showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 14 is a cross-sectional view of a semiconductor device according to the second embodiment. Figure 15 is a cross-sectional view of a modified semiconductor device. Figure 16 is a cross-sectional view of a modified semiconductor device. Figure 17 is a cross-sectional view of a modified semiconductor device. Figure 18 is a cross-sectional view of a modified semiconductor device. Figure 19 is a cross-sectional view of a semiconductor device according to a modified example.

[0009] <First Embodiment> <Outline Configuration of Semiconductor Device> Hereinafter, the first embodiment of the present disclosure will be described with reference to Figures 1 to 13. First, the outline configuration of the semiconductor device 100 will be described.

[0010] As shown in Figure 1, the semiconductor device 100 is generally rectangular in shape. The semiconductor device 100 comprises a base body 10, two capacitor sections 30, and an inductor section 50. The capacitor sections 30 are located inside the base body 10. The inductor section 50 is also located inside the base body 10.

[0011] The base body 10 is roughly rectangular in shape. That is, the base body 10 has six planar outer surfaces. Of these six outer surfaces, one specific surface is designated as the first main surface 100A. The surface located opposite to the first main surface 100A and parallel to the first main surface 100A is designated as the second main surface 100B. Furthermore, the four outer surfaces perpendicular to the first main surface 100A, in other words, the outer surfaces excluding the first main surface 100A and the second main surface 100B, are designated as side surfaces 100C. The shapes of the first main surface 100A, the second main surface 100B, and the side surfaces 100C are all roughly rectangular. Note that "parallel" does not mean parallel in a strict sense, but rather allows for manufacturing tolerances, etc. For example, if the acute angle between the first main surface 100A and the second main surface 100B is less than 5 degrees, they are considered parallel.

[0012] Here, as shown in Figures 1 and 2, the axis parallel to the long side of the first main surface 100A is defined as the first axis X. The axis parallel to the short side of the first main surface 100A is defined as the second axis Y. The axis perpendicular to the first main surface 100A is defined as the third axis Z. In this embodiment, the first axis X, the second axis Y, and the third axis Z are orthogonal to each other.

[0013] Furthermore, a specific direction along the first axis X is designated as the first positive direction XA, and the direction opposite to the first positive direction XA is designated as the first negative direction XB. A specific direction along the second axis Y is designated as the second positive direction YA, and the direction opposite to the second positive direction YA is designated as the second negative direction YB. A specific direction along the third axis Z is designated as the third positive direction ZA, and the direction opposite to the third positive direction ZA is designated as the third negative direction ZB.

[0014] As shown in Figure 1, the base body 10 comprises a substrate 12, a first insulating layer 13, a second insulating layer 14, a third insulating layer 15, an insulator 16, and a fourth insulating layer 17. The substrate 12, the first insulating layer 13, the second insulating layer 14, the third insulating layer 15, the insulator 16, and the fourth insulating layer 17 are arranged in this order from the third negative direction ZB toward the third positive direction ZA.

[0015] <Detailed Configuration of Semiconductor Device> Next, the detailed configuration of the semiconductor device 100 will be described. As shown in Figure 1, the shape of the substrate 12 is a rectangular plate. The substrate 12 extends on a plane parallel to the first main surface 100A. The material of the substrate 12 is silicon. That is, the substrate 12 contains silicon.

[0016] The first insulating layer 13 is in contact with the outer surface of the substrate 12 on the third positive direction ZA side. The shape of the first insulating layer 13 is a rectangular plate. The first insulating layer 13 extends on a plane parallel to the first main surface 100A. When the semiconductor device 100 is viewed through to the third positive direction ZA, the shape of the outer edge of the first insulating layer 13 is the same as the shape of the outer edge of the substrate 12. An example of the material of the first insulating layer 13 is SiO ２ That is the case.

[0017] As shown in Figure 1, the semiconductor device 100 comprises a barrier film 20, a wiring body 25, a first aluminum body 26, a second aluminum body 27, a first aluminum oxide body 28, and a second aluminum oxide body 29.

[0018] As shown in Figure 1, the barrier film 20 is in contact with the outer surface of the first insulating layer 13 on the third positive direction ZA side. The barrier film 20 has a rectangular plate shape. The barrier film 20 extends on a plane parallel to the first main surface 100A. When the semiconductor device 100 is viewed through with the third positive direction ZA facing it, the shape of the outer edge of the barrier film 20 is the same as the shape of the outer edge of the substrate 12. An example of the material of the barrier film 20 is a metal mainly composed of tungsten. In this embodiment, the barrier film 20 is located inside the base body 10, is in contact with the first electrode layer 46 of the plurality of capacitor parts 30 described later, and is an example of common wiring that is electrically connected to the first electrode layer 46 of the plurality of capacitor parts 30.

[0019] As shown in Figure 1, the first aluminum oxide body 28 is in contact with the outer surface of the barrier film 20 on the third positive direction ZA side. When the semiconductor device 100 is viewed through in the third negative direction ZB, the first aluminum oxide body 28 is located in a portion of the region where the barrier film 20 exists, including one end in the first negative direction XB. As shown in Figure 2, when the semiconductor device 100 is viewed through in the third negative direction ZB, the first aluminum oxide body 28 extends from the end in the second positive direction YA to the end in the second negative direction YB within the region where the barrier film 20 exists. The shape of the first aluminum oxide body 28 is generally a rectangular parallelepiped. The material of the first aluminum oxide body 28 is almost aluminum oxide, but it may contain impurities. The first aluminum oxide body 28 has holes 42 similar to those of the aluminum oxide body 41 described later.

[0020] As shown in Figure 1, the first aluminum body 26 is in contact with the outer surface of the barrier film 20 on the third positive direction ZA side. The first aluminum body 26 is also in contact with the outer surface of the first aluminum oxide body 28 on the first positive direction XA side. As shown in Figure 2, when the semiconductor device 100 is viewed through in the third negative direction ZB, the first aluminum body 26 extends from the end of the second positive direction YA to the end of the second negative direction YB in the region where the barrier film 20 exists. The shape of the first aluminum body 26 is generally a rectangular parallelepiped. The material of the first aluminum body 26 is a metal mainly composed of aluminum.

[0021] As shown in Figure 1, the second aluminum body 27 is in contact with the outer surface of the barrier film 20 on the third positive direction ZA side. As shown in Figure 2, when the semiconductor device 100 is viewed through in the third negative direction ZB, the first aluminum body 26 is located in the central part of the region where the barrier film 20 exists in the first positive direction XA. The second aluminum body 27 is separated from the first aluminum body 26 in the first positive direction XA. When the semiconductor device 100 is viewed through in the third negative direction ZB, the second aluminum body 27 extends from the end of the second positive direction YA to the end of the second negative direction YB in the region where the barrier film 20 exists. The shape of the second aluminum body 27 is generally a rectangular parallelepiped. The material of the second aluminum body 27 is a metal mainly composed of aluminum.

[0022] As shown in Figure 1, the wiring 25 is in contact with the outer surface of the barrier film 20 on the third positive direction ZA side. The wiring 25 is separated from the second aluminum body 27 in the first positive direction XA. As shown in Figure 2, when the semiconductor device 100 is viewed through in the third negative direction ZB, the wiring 25 extends from the end of the second positive direction YA to the end of the second negative direction YB in the region where the barrier film 20 exists. The shape of the wiring 25 is generally that of a rectangular parallelepiped. The material of the wiring 25 is a metal mainly composed of aluminum.

[0023] As shown in Figure 1, the second aluminum oxide body 29 is in contact with the outer surface of the barrier film 20 on the third positive direction ZA side. When the semiconductor device 100 is viewed through in the third negative direction ZB, the second aluminum oxide body 29 is located in a portion of the region where the barrier film 20 exists, including one end of the first positive direction XA. As shown in Figure 2, when the semiconductor device 100 is viewed through in the third negative direction ZB, the second aluminum oxide body 29 extends from the end of the second positive direction YA to the end of the second negative direction YB in the region where the barrier film 20 exists. The second aluminum oxide body 29 is in contact with the outer surface of the wiring body 25 on the first positive direction XA side. The shape of the second aluminum oxide body 29 is generally a rectangular parallelepiped. The material of the second aluminum oxide body 29 is almost aluminum oxide, but it may contain impurities. The second aluminum oxide body 29 has holes 42 similar to those of the aluminum oxide body 41 described later.

[0024] As shown in Figure 1, the capacitor portion 30 is in contact with the outer surface of the barrier film 20 on the third positive direction ZA side. The capacitor portion 30 has a rectangular parallelepiped shape overall. In the following, when the two capacitor portions 30 are described separately, they will be referred to as the first capacitor portion 30A and the second capacitor portion 30B. When the two capacitor portions 30 are described collectively, they will simply be referred to as the capacitor portion 30.

[0025] As shown in Figure 1, the capacitor section 30 comprises an aluminum oxide body 41, a first electrode layer 46, a second electrode layer 47, and a dielectric layer 48. The aluminum oxide body 41 is in contact with the outer surface of the barrier film 20 on the third positive direction ZA side. Therefore, in the third positive direction ZA, the aluminum oxide body 41 is located in the same layer as the wiring body 25, the first aluminum body 26, the second aluminum body 27, the first aluminum oxide body 28, and the second aluminum oxide body 29. The shape of the aluminum oxide body 41 is generally a rectangular parallelepiped. As shown in Figure 2, when the semiconductor device 100 is viewed through in the third negative direction ZB, the aluminum oxide body 41 extends from the end of the second positive direction YA to the end of the second negative direction YB in the region where the barrier film 20 exists. In other words, the outer surface of the aluminum oxide body 41 is exposed on the outer surface of the base body 10. The material of the aluminum oxide body 41 is almost entirely aluminum oxide, but it may contain impurities.

[0026] As shown in Figure 1, in this embodiment, the aluminum oxide body 41 of the first capacitor section 30A is located between the first aluminum body 26 and the second aluminum body 27. The aluminum oxide body 41 of the second capacitor section 30B is located between the second aluminum body 27 and the wiring body 25. Therefore, the second capacitor section 30B is located on the first positive direction XA side relative to the first capacitor section 30A. Furthermore, the entirety of the second capacitor section 30B is located on the same layer as the entirety of the first capacitor section 30A in a direction perpendicular to the first main surface 100A.

[0027] As shown in Figure 2, the aluminum oxide body 41 has a plurality of holes 42. The holes 42 extend from the outer surface of the aluminum oxide body 41 on the third positive direction ZA side to the third negative direction ZB side. Specifically, when viewing the semiconductor device 100 through the aluminum oxide body 41 facing the third positive direction ZA, the holes 42 located near the center of the aluminum oxide body 41 extend generally parallel to the third axis Z. In this embodiment, these holes 42 extend from the outer surface of the aluminum oxide body 41 on the third positive direction ZA side to the outer surface on the third negative direction ZB side. That is, the holes 42 located near the center of the aluminum oxide body 41 penetrate the aluminum oxide body 41 along the third axis Z. Note that in each drawing, the inner diameter 42D of each hole 42 is exaggerated in the illustration. Also, an example of the actual inner diameter 42D of each hole 42 is about 0.08 μm. In Figure 2, the opening edge of the hole 42 is shown as a perfect circle, but the actual opening edge of the hole 42 does not need to be a perfect circle.

[0028] Furthermore, when viewing the semiconductor device 100 through the third positive direction ZA, the holes 42 located on the outside of the aluminum oxide body 41 extend inclined with respect to the third axis Z. In this embodiment, these holes 42 extend from the outer surface of the aluminum oxide body 41 on the third positive direction ZA side to the side surface of the aluminum oxide body 41. Also, as described above, the outer surface of the aluminum oxide body 41 is exposed on the outer surface of the base body 10. Therefore, some of the multiple holes 42 open in the portion of the aluminum oxide body 41 that is exposed on the outer surface of the base body 10. Note that in Figure 2, the first electrode layer 46, the second electrode layer 47, and the dielectric layer 48, which will be described later, are not shown.

[0029] As shown in Figure 1, the second insulating layer 14 is in contact with the outer surfaces on the third positive direction ZA side of the first aluminum oxide body 28, the first aluminum body 26, the aluminum oxide body 41 of the first capacitor section 30A, the second aluminum body 27, the aluminum oxide body 41 of the second capacitor section 30B, the wiring body 25, and the second aluminum oxide body 29. When the semiconductor device 100 is viewed through with the third positive direction ZA facing it, the shape of the outer edge of the second insulating layer 14 is the same as the shape of the outer edge of the substrate 12. When the semiconductor device 100 is viewed through with the third positive direction ZA facing it, the second insulating layer 14 is not located in the central part of the aluminum oxide body 41. That is, the central part of the outer surface on the third positive direction ZA side of the aluminum oxide body 41 is not covered by the second insulating layer 14. Also, when the semiconductor device 100 is viewed through with the third positive direction ZA facing it, the second insulating layer 14 is not located in the central part of the wiring body 25. In other words, the central part of the outer surface on the third positive direction ZA side of the wiring body 25 is not covered by the second insulating layer 14.

[0030] The first electrode layer 46 is in contact with the aluminum oxide body 41. Specifically, the first electrode layer 46 is laminated on the outer surface of the aluminum oxide body 41 on the third positive direction ZA side, the inner surfaces of the multiple holes 42, the outer surface of the second insulating layer 14 on the third positive direction ZA side, and the outer surface of the barrier film 20 on the third positive direction ZA side. That is, the first electrode layer 46 is also in contact with the barrier film 20. Note that the above-mentioned parts of the first electrode layer 46 are continuous. That is, the first electrode layer 46 is not separated. In this embodiment, the first electrode layer 46 is laminated only on the inner surface of the hole 42 located near the center of the aluminum oxide body 41 when viewing the semiconductor device 100 facing the third positive direction ZA. In this embodiment, the first electrode layer 46 of the first capacitor section 30A and the first electrode layer 46 of the second capacitor section 30B are continuous. An example of the material of the first electrode layer 46 is a metal mainly composed of aluminum.

[0031] Here, among the holes 42, those in which the first electrode layer 46 is laminated on the inner surface are designated as first holes 42A, and those in which the first electrode layer 46 is not laminated on the inner surface are designated as second holes 42B. When the semiconductor device 100 is viewed through with the third positive direction ZA, the plurality of second holes 42B in the aluminum oxide body 41 are located on the outside so as to surround the plurality of first holes 42A in the aluminum oxide body 41. In other words, when the semiconductor device 100 is viewed through with the third positive direction ZA, the plurality of second holes 42B are located on the outside relative to the plurality of first holes 42A.

[0032] The dielectric layer 48 is in contact with the first electrode layer 46. Specifically, the dielectric layer 48 is laminated over substantially the entire area of ​​the first electrode layer 46 opposite to the aluminum oxide body 41. In this embodiment, the dielectric layer 48 of the first capacitor section 30A and the dielectric layer 48 of the second capacitor section 30B are continuous. An example of the material of the dielectric layer 48 is SiO ２ That is the case.

[0033] The second electrode layer 47 is in contact with the dielectric layer 48. Specifically, the second electrode layer 47 is laminated over substantially the entire area of ​​the dielectric layer 48 on the side opposite to the first electrode layer 46. In this embodiment, the second electrode layer 47 of the first capacitor section 30A and the second electrode layer 47 of the second capacitor section 30B are continuous. An example of the material of the second electrode layer 47 is a metal mainly composed of aluminum.

[0034] As shown in Figure 1, the semiconductor device 100 includes a first capacitor wiring layer 61, a second capacitor wiring layer 62, a first connection part 86, and a second connection part 87. The first capacitor wiring layer 61 is in contact with the outer surface of the second electrode layer 47 of the capacitor section 30 on the third positive direction ZA side. Specifically, the first capacitor wiring layer 61 is in contact with the outer surface of the second electrode layer 47 of the first capacitor section 30A on the third positive direction ZA side, and the outer surface of the second electrode layer 47 of the second capacitor section 30B on the third positive direction ZA side. In other words, the first capacitor wiring layer 61 is electrically connected to the second electrode layer 47 of the first capacitor section 30A and the second electrode layer 47 of the second capacitor section 30B. When the semiconductor device 100 is viewed through with the third positive direction ZA facing the third positive direction, the first capacitor wiring layer 61 is located in the region where the second electrode layer 47 exists, overlapping with the aluminum oxide body 41 of the first capacitor section 30A, the second aluminum body 27, and the aluminum oxide body 41 of the second capacitor section 30B. In this embodiment, the shape of the first capacitor wiring layer 61 is generally rectangular. The first capacitor wiring layer 61 extends in a direction parallel to the first main surface 100A as a whole. An example of the material of the first capacitor wiring layer 61 is a metal mainly composed of aluminum. In this embodiment, the first capacitor wiring layer 61 is an example of wiring that electrically connects a plurality of capacitor sections 30.

[0035] The second capacitor wiring layer 62 is in contact with the outer surface of the wiring body 25 on the third positive direction ZA side. That is, the second capacitor wiring layer 62 is electrically connected to the wiring body 25. When the semiconductor device 100 is viewed through to the third positive direction ZA, the second capacitor wiring layer 62 is located near the center of the wiring body 25. Note that the second capacitor wiring layer 62 is not in contact with the first capacitor wiring layer 61. An example of the material of the second capacitor wiring layer 62 is a metal mainly composed of aluminum.

[0036] As shown in Figure 1, the third insulating layer 15 is in contact with the outer surface of the second insulating layer 14 on the third positive direction ZA side, the outer surface of the first capacitor wiring layer 61 on the third positive direction ZA side, and the outer surface of the second capacitor wiring layer 62 on the third positive direction ZA side. In other words, the first capacitor wiring layer 61 is located inside the substrate 10. The third insulating layer 15 is generally rectangular in shape. The third insulating layer 15 extends on a plane parallel to the first main surface 100A. When the semiconductor device 100 is viewed through with the third positive direction ZA facing it, the shape of the outer edge of the third insulating layer 15 is the same as the shape of the outer edge of the substrate 12. An example of the material of the third insulating layer 15 is polyimide.

[0037] As shown in Figure 1, the first connection portion 86 is located inside the third insulating layer 15. The first connection portion 86 is in contact with the outer surface of the first capacitor wiring layer 61 on the third positive direction ZA side. When the semiconductor device 100 is viewed through to the third positive direction ZA, the first connection portion 86 is located where it overlaps with the aluminum oxide body 41 of the first capacitor portion 30A. The first connection portion 86 extends from the first capacitor wiring layer 61 toward the third positive direction ZA. The outer surface of the first connection portion 86 on the third positive direction ZA side is exposed on the outer surface of the third insulating layer 15 on the third positive direction ZA side. An example of the material of the first connection portion 86 is a metal mainly composed of copper.

[0038] The second connection portion 87 is located inside the third insulating layer 15. The second connection portion 87 is in contact with the outer surface of the second capacitor wiring layer 62 on the third positive direction ZA side. The second connection portion 87 extends from the second capacitor wiring layer 62 toward the third positive direction ZA. The outer surface of the second connection portion 87 on the third positive direction ZA side is exposed on the outer surface of the third insulating layer 15 on the third positive direction ZA side. An example of the material of the second connection portion 87 is a metal mainly composed of copper.

[0039] As shown in Figure 1, the insulator 16 is in contact with the outer surface of the third insulating layer 15 on the third positive direction ZA side. The shape of the insulator 16 is generally that of a rectangular parallelepiped. When the semiconductor device 100 is viewed through with the third positive direction ZA facing it, the shape of the outer edge of the insulator 16 is the same as the shape of the outer edge of the substrate 12. The electrical resistance of the insulator 16 is greater than the electrical resistance of the aluminum oxide body 41 of the capacitor portion 30. In this embodiment, the effective relative permeability of at least a portion of the insulator 16 is greater than 1. An example of the material of the insulator 16 is polyimide.

[0040] In the following, the insulator 16 will be described by broadly classifying it into a first insulator 16A and a second insulator 16B. The first insulator 16A and the second insulator 16B will be described as being stacked in this order from the third negative direction ZB to the third positive direction ZA. In Figure 1, the boundary between the first insulator 16A and the second insulator 16B is virtually indicated by a dashed line.

[0041] As shown in Figure 1, the fourth insulating layer 17 is in contact with the outer surface of the insulator 16 on the third positive direction ZA side. The shape of the fourth insulating layer 17 is generally rectangular. When the semiconductor device 100 is viewed through with the third positive direction ZA facing it, the shape of the outer edge of the fourth insulating layer 17 is the same as the shape of the outer edge of the substrate 12. An example of the material of the fourth insulating layer 17 is polyimide.

[0042] In the following, the fourth insulating layer 17 will be described by broadly dividing it into the first layer 17A and the second layer 17B. The first layer 17A and the second layer 17B will be described as being stacked in this order from the third negative direction ZB toward the third positive direction ZA. In Figure 1, the boundary between the first layer 17A and the second layer 17B is virtually indicated by a dashed line.

[0043] As shown in FIG. 1, the semiconductor device 100 includes a first columnar wiring 81 and two second columnar wirings 82. The first columnar wiring 81 is located inside the third insulating layer 15, the insulator 16, and the fourth insulating layer 17. In other words, the first columnar wiring 81 is located inside the body 10. The first columnar wiring 81 contacts the outer surface on the third positive direction ZA side of the third insulating layer 15 and the outer surface on the third positive direction ZA side of the first connection portion 86. In other words, the first columnar wiring 81 is electrically connected to the second electrode layer 47 of the two capacitor portions 30 via the first connection portion 86 and the first capacitor wiring layer 61. The first columnar wiring 81 extends from the first connection portion 86 toward the third positive direction ZA. In other words, the first columnar wiring 81 extends in a direction orthogonal to the first main surface 100A on the side where the inductor wiring 51 to be described later is located with respect to the capacitor portion 30. The outer surface on the third positive direction ZA side of the first columnar wiring 81 is exposed on the outer surface on the third positive direction ZA side of the first layer 17A of the fourth insulating layer 17. An example of the material of the first columnar wiring 81 is a metal mainly composed of copper.

[0044] Hereinafter, the first columnar wiring 81 will be described in a general classification into a first layer 81A, a second layer 81B, and a third layer 81C. The first layer 81A, the second layer 81B, and the third layer 81C will be described as being laminated in this order from the third negative direction ZB toward the third positive direction ZA. The first layer 81A is a portion of the first columnar wiring 81 that is located in the same layer as the first insulator 16A of the insulator 16 in the third positive direction ZA. The second layer 81B is a portion of the first columnar wiring 81 that is located in the same layer as the second insulator 16B of the insulator 16 in the third positive direction ZA. The third layer 81C is a portion of the first columnar wiring 81 that is located in the same layer as the first layer 17A of the fourth insulating layer 17 in the third positive direction ZA.

[0045] As shown in Figure 1, the second columnar wiring 82 is located inside the third insulating layer 15, the insulator 16, and the fourth insulating layer 17. In other words, the second columnar wiring 82 is located inside the base body 10. The second columnar wiring 82 is in contact with the outer surface of the third insulating layer 15 on the third positive direction ZA side and with the outer surface of the second connection portion 87 on the third positive direction ZA side. In other words, the second columnar wiring 82 is electrically connected to the first electrode layer 46 of the two capacitor portions 30 via the second connection portion 87, the second capacitor wiring layer 62, the wiring body 25, and the barrier film 20. That is, the two second columnar wirings 82 are electrically connected to the first electrode layer 46 of the two capacitor portions 30 by electrically connecting with the barrier film 20. The second columnar wiring 82 extends from the second connection portion 87 toward the third positive direction ZA. In other words, the second columnar wiring 82 extends in a direction perpendicular to the first main surface 100A on the side where the inductor wiring 51, described later, is located relative to the capacitor section 30. The outer surface of the second columnar wiring 82 on the third positive direction ZA side is exposed on the outer surface of the first layer 17A of the fourth insulating layer 17 on the third positive direction ZA side. In this embodiment, as shown in Figure 3, the two second columnar wirings 82 are separated in the second positive direction YA. An example of the material of the second columnar wiring 82 is a metal mainly composed of copper.

[0046] As shown in Figure 1, the second columnar wiring 82 will be described below by dividing it into three main layers: the first layer 82A, the second layer 82B, and the third layer 82C. The first layer 82A, the second layer 82B, and the third layer 82C will be described as being stacked in this order from the third negative direction ZB toward the third positive direction ZA. The first layer 82A is the portion of the second columnar wiring 82 that is located in the same layer as the first insulator 16A of the insulator 16 in the third positive direction ZA. The second layer 82B is the portion of the second columnar wiring 82 that is located in the same layer as the second insulator 16B of the insulator 16 in the third positive direction ZA. The third layer 82C is the portion of the second columnar wiring 82 that is located in the same layer as the first layer 17A of the fourth insulating layer 17 in the third positive direction ZA.

[0047] As shown in FIG. 1, the inductor section 50 includes an inductor wiring 51. The inductor wiring 51 is located inside the third insulating layer 15, the insulator 16, and the fourth insulating layer 17. In other words, the insulator 16 covers the outer surface of the inductor wiring 51. Also, in the present embodiment, the inductor wiring 51 is located on the +Z3A side with respect to the capacitor section 30. In other words, the inductor wiring 51 is located in a layer different from the capacitor section 30 in the direction orthogonal to the first main surface 100A. When the semiconductor device 100 is viewed through in the direction of the +Z3A, the inductor wiring 51 overlaps with the first capacitor section 30A and the second capacitor section 30B. An example of the material of the inductor wiring 51 is a metal mainly composed of copper.

[0048] As shown in FIG. 3, the inductor wiring 51 is turning around a turning axis parallel to the first main surface 100A. Specifically, the shape of the inductor wiring 51 is a spiral shape centered on a turning axis parallel to the first main surface 100A. In the present embodiment, the turning axis of the inductor wiring 51 is parallel to the first axis X. Also, when the semiconductor device 100 is viewed through in the direction of the +X1A, the shape of the inductor wiring 51 is such that it is located on the +X1A side as it turns clockwise.

[0049] As shown in Figure 3, the inductor wiring 51 will be described below by dividing it into four main parts: a first part 56, a second part 57, a third part 58, and a fourth part 59. Specifically, when viewing the semiconductor device 100 through the first positive direction XA, and considering the one-turn clockwise rotation of the inductor wiring 51, the first part 56, the second part 57, the third part 58, and the fourth part 59 are connected in this order. The first part 56 is the portion of the inductor wiring 51 that is located in the same layer as the first insulator 16A of the insulator 16 in the third positive direction ZA. The first part 56 extends toward the second positive direction YA. The second part 57 is the portion of the inductor wiring 51 that is located in the same layer as the second insulator 16B of the insulator 16 in the third positive direction ZA. The second part 57 extends from the first part 56 toward the third positive direction ZA. The third portion 58 is the part of the inductor wiring 51 that is located in the same layer as the first layer 17A of the fourth insulating layer 17 in the third positive direction ZA. The third portion 58 extends from the second portion 57 toward the second negative direction YB, and is located toward the first positive direction XA. The fourth portion 59 is the part of the inductor wiring 51 that is located in the same layer as the second insulating layer 16B of the insulator 16 in the third positive direction ZA. The fourth portion 59 extends from the third portion 58 toward the third negative direction ZB.

[0050] As shown in Figure 1, the maximum dimension 59H of the fourth portion 59 in the direction perpendicular to the first main surface 100A is greater than the maximum dimension 58H of the third portion 58 in the direction perpendicular to the first main surface 100A. Similarly, the maximum dimension 59H of the fourth portion 59 in the direction perpendicular to the first main surface 100A is greater than the maximum dimension 56H of the first portion 56 in the direction perpendicular to the first main surface 100A. Note that the maximum dimension 59H of the fourth portion 59 in the direction perpendicular to the first main surface 100A is the same as the maximum dimension 57H of the second portion 57 in the direction perpendicular to the first main surface 100A. Also, the maximum dimension 58H of the third portion 58 in the direction perpendicular to the first main surface 100A is the same as the maximum dimension 56H of the first portion 56 in the direction perpendicular to the first main surface 100A. In this embodiment, the second portion 57 and the fourth portion 59 are examples of first connecting portions extending in a direction perpendicular to the first main surface 100A. The first portion 56 and the third portion 58 are examples of second connecting portions extending in a direction parallel to the first main surface 100A.

[0051] As shown in Figure 3, in the following, the end of the spiral-shaped inductor wiring 51 on the first negative direction XB side will be referred to as the first end 51A. Also, the end of the spiral-shaped inductor wiring 51 on the first positive direction XA side will be referred to as the second end 51B.

[0052] As shown in Figure 3, the first end 51A of the inductor wiring 51 is in contact with the first layer 81A of the first columnar wiring 81. When the semiconductor device 100 is viewed through in the third positive direction ZA, the first end 51A of the inductor wiring 51 is located in a position that overlaps with the aluminum oxide body 41 of the first capacitor section 30A. Furthermore, the first end 51A of the inductor wiring 51 is located in the same layer as the first insulator 16A of the insulator 16 in the third positive direction ZA.

[0053] Furthermore, when the semiconductor device 100 is viewed through in the third positive direction ZA, the second end 51B of the inductor wiring 51 is located in a place that overlaps with the aluminum oxide body 41 of the second capacitor section 30B. The second end 51B of the inductor wiring 51 is located in the same layer as the first layer 17A of the fourth insulating layer 17 in the third positive direction ZA.

[0054] As shown in Figure 1, the outer surface of the inductor wiring 51 on the third negative direction ZB side is in contact with the outer surface of the third insulating layer 15 on the third positive direction ZA side. Also, the outer surface of the inductor wiring 51 on the third positive direction ZA side is exposed on the outer surface of the first layer 17A of the fourth insulating layer 17 on the third positive direction ZA side.

[0055] As shown in Figure 1, the maximum dimension 51MX of the inductor wiring 51 in the first positive direction XA is greater than the maximum dimension 41MX of the aluminum oxide body 41 of the capacitor section 30 in the first positive direction XA. In other words, the maximum dimension 51MX of the inductor wiring 51 in the direction parallel to the pivot axis is greater than the maximum dimension 41MX of the aluminum oxide body 41 of the capacitor section 30 in the direction parallel to the pivot axis. Also, the maximum dimension 51MZ of the inductor wiring 51 in the direction perpendicular to the first main surface 100A is greater than the maximum dimension 30MZ of the capacitor section 30 in the direction perpendicular to the first main surface 100A. Furthermore, the minimum width dimension 51W of the inductor wiring 51 is greater than the minimum dimension 61H of the first capacitor wiring layer 61 in the direction perpendicular to the first main surface 100A. An example of the minimum width dimension 51W of the inductor wiring 51 is about 10 μm. Here, the minimum width dimension 51W of the inductor wiring 51 is the shortest distance from one edge to the other edge of the inductor wiring 51 in a direction perpendicular to the direction in which the inductor wiring 51 extends. In this embodiment, the portion of the inductor wiring 51 that corresponds to the minimum width dimension 51W is the same as the portion of the third portion 58 that corresponds to the maximum dimension 58H. Also, the portion of the inductor wiring 51 that corresponds to the minimum width dimension 51W is the same as the portion of the first portion 56 that corresponds to the maximum dimension 56H. An example of the minimum dimension 61H of the first capacitor wiring layer 61 in a direction perpendicular to the first main surface 100A is approximately 1 μm.

[0056] As shown in Figure 1, the semiconductor device 100 includes a third connection portion 88, a fourth connection portion 89, two fifth connection portions 90, a first terminal 91, a second terminal 92, and a third terminal 93. The third connection portion 88 is located inside the fourth insulating layer 17. The third connection portion 88 is in contact with the outer surface of the third layer 81C of the first columnar wiring 81 on the third positive direction ZA side. The third connection portion 88 extends from the first columnar wiring 81 toward the third positive direction ZA. The outer surface of the third connection portion 88 on the third positive direction ZA side is exposed on the outer surface of the fourth insulating layer 17 on the third positive direction ZA side. An example of the material of the third connection portion 88 is a metal mainly composed of copper.

[0057] The fourth connection portion 89 is located inside the fourth insulating layer 17. The fourth connection portion 89 is the second end 51B of the inductor wiring 51 and is in contact with the outer surface of the inductor wiring 51 on the third positive direction ZA side. The fourth connection portion 89 extends from the inductor wiring 51 toward the third positive direction ZA. The outer surface of the fourth connection portion 89 on the third positive direction ZA side is exposed on the outer surface of the fourth insulating layer 17 on the third positive direction ZA side. An example of the material of the fourth connection portion 89 is a metal mainly composed of copper.

[0058] The fifth connection portion 90 is located inside the fourth insulating layer 17. The fifth connection portion 90 is in contact with the outer surface of the third layer 82C of the second columnar wiring 82 on the third positive direction ZA side. The fifth connection portion 90 extends from the second columnar wiring 82 toward the third positive direction ZA. The outer surface of the fifth connection portion 90 on the third positive direction ZA side is exposed on the outer surface of the fourth insulating layer 17 on the third positive direction ZA side. An example of the material of the fifth connection portion 90 is a metal mainly composed of copper.

[0059] As shown in Figure 1, the first terminal 91 is in contact with the outer surface of the third connection portion 88 on the third positive direction ZA side and the outer surface of the fourth insulating layer 17 on the third positive direction ZA side. That is, the first terminal 91 is electrically connected to the second electrode layer 47 of the capacitor portion 30 via the third connection portion 88, the first columnar wiring 81, and the first capacitor wiring layer 61. The first terminal 91 is also electrically connected to the first end 51A of the inductor wiring 51 via the third connection portion 88 and the first columnar wiring 81. The shape of the first terminal 91 is generally rectangular plate-like. An example of the material of the first terminal 91 is a metal mainly composed of copper.

[0060] The second terminal 92 is in contact with the outer surface of the fourth connection portion 89 on the third positive direction ZA side and the outer surface of the fourth insulating layer 17 on the third positive direction ZA side. That is, the second terminal 92 is electrically connected to the second end 51B of the inductor wiring 51 via the fourth connection portion 89. The shape of the second terminal 92 is generally rectangular. An example of the material of the second terminal 92 is a metal mainly composed of copper.

[0061] The third terminal 93 is in contact with the outer surface of the fifth connection portion 90 on the third positive direction ZA side and the outer surface of the fourth insulating layer 17 on the third positive direction ZA side. That is, the third terminal 93 is electrically connected to the first electrode layer 46 of the capacitor portion 30 via the fifth connection portion 90, the second columnar wiring 82, the second connection portion 87, the second capacitor wiring layer 62, the wiring body 25, and the barrier film 20. The third terminal 93 is in contact with the outer surfaces of the two fifth connection portions 90. The shape of the third terminal 93 is generally rectangular plate-like. An example of the material of the third terminal 93 is a metal mainly composed of copper.

[0062] <Manufacturing Method> Next, the manufacturing method of the semiconductor device 100 will be described with reference to Figures 4 to 13. In the following, a manufacturing method performed by an operator will be described as an example. In the following, for convenience, not only when an operator operates the manufacturing equipment, but also when the manufacturing equipment is automatically executed based on the operator's settings, will be described as being performed by an operator.

[0063] As shown in Figure 4, first, the workers perform the base preparation step S11. Specifically, as shown in Figure 5, the workers prepare a plate-shaped base substrate 12Z. The dimensions of the main surface 12ZA of the base substrate 12Z are such that multiple semiconductor devices 100 can be molded onto it. Here, the material of the base substrate 12Z is ​​the same as the material of the substrate 12. Also, a portion of the base substrate 12Z constitutes the substrate 12.

[0064] In the following, the axis perpendicular to the main surface 12ZA of the base substrate 12Z is ​​defined as the third axis Z. Furthermore, the direction parallel to the third axis Z in which the main surface 12ZA faces is defined as the third positive direction ZA, and the direction opposite to the third positive direction ZA is defined as the third negative direction ZB. Note that the third positive direction ZA during the manufacturing of the semiconductor device 100 corresponds to the third positive direction ZA in the semiconductor device 100 after manufacturing.

[0065] As shown in Figure 4, the worker then performs the insulating layer formation process S12. Specifically, as shown in Figure 5, the worker forms an intermediate insulating layer 13Z on the main surface 12ZA of the base substrate 12Z, that is, on the outer surface on the third positive direction ZA side of the base substrate 12Z. One example of a method by which the worker forms the intermediate insulating layer 13Z is the sputtering method or the CVD method. "CVD" is an abbreviation for Chemical Vapor Deposition. The "CVD method" is also called chemical vapor deposition. Here, the material of the intermediate insulating layer 13Z is the same as the material of the first insulating layer 13. Also, a portion of the intermediate insulating layer 13Z constitutes the first insulating layer 13.

[0066] As shown in Figure 4, the worker then performs the barrier film formation process S13. Specifically, as shown in Figure 5, the worker forms an intermediate barrier film 20Z on the outer surface of the intermediate insulating layer 13Z on the third positive direction ZA side. One example of a method by which the worker forms the intermediate barrier film 20Z is the sputtering method or the CVD method. Here, the material of the intermediate barrier film 20Z is the same as the material of the barrier film 20. Also, a portion of the intermediate barrier film 20Z constitutes the barrier film 20.

[0067] As shown in Figure 4, the worker then performs the intermediate formation process S14. Specifically, as shown in Figure 6, the worker forms the intermediate 41Z on the outer surface of the intermediate barrier film 20Z on the third positive direction ZA side. In other words, in this embodiment, the worker forms the intermediate 41Z on the main surface 12ZA of the base substrate 12Z via the intermediate insulating layer 13Z and the intermediate barrier film 20Z. One example of a method by which the worker forms the intermediate 41Z is the CVD method. As mentioned above, the "CVD method" is also called chemical vapor deposition. Here, the material of the intermediate 41Z is a metal mainly composed of aluminum. Parts of the intermediate 41Z constitute the wiring body 25, the first aluminum body 26, the second aluminum body 27, the first aluminum oxide body 28, the second aluminum oxide body 29, the aluminum oxide body 41 of the first capacitor section 30A, and the aluminum oxide body 41 of the second capacitor section 30B.

[0068] As shown in Figure 4, the next step is for the worker to perform the mask formation process S15. Specifically, as shown in Figure 6, the mask 101 is formed on the outer surface of the intermediate body 41Z on the third positive direction ZA side. At this time, when the semiconductor device 100 is viewed through with the third positive direction ZA facing the viewer, the mask 101 is open in the portion of the intermediate body 41Z that constitutes the aluminum oxide body 41. Although not shown in Figure 6, when the semiconductor device 100 is viewed through with the third positive direction ZA facing the viewer, the mask 101 is also open near the portions of the intermediate body 41Z that constitute the first aluminum oxide body 28 and the second aluminum oxide body 29. One example of a method by which the worker forms the mask 101 is the sputtering method or the CVD method.

[0069] As shown in Figure 4, the workers then perform the anodic oxidation process S16. Specifically, as shown in Figure 7, the workers use the anodic oxidation method to convert a portion of the intermediate 41Z into an aluminum oxide body 41 having multiple pores 42 extending from the outer surface on the third positive direction ZA side to the third negative direction ZB side. Here, the anodic oxidation method is a processing method that forms an oxide film on the surface of the intermediate 41Z by passing an electric current through the intermediate 41Z, which is the target object, with the intermediate 41Z as the anode in an electrolytic solution. Then, the pores 42 are formed in the above process. In this anodic oxidation process S16, only the portion of the intermediate 41Z that is in contact with the electrolytic solution is oxidized to become an aluminum oxide body 41. As a result, a portion of the intermediate 41Z is formed as an aluminum oxide body 41. Similarly, the workers use the anodic oxidation method to convert a portion of the intermediate 41Z into a first aluminum oxide body 28 and a second aluminum oxide body 29. As a result, a portion of the intermediate 41Z becomes the wiring body 25, the first aluminum body 26, and the second aluminum body 27. The anodic oxidation method is sometimes referred to as anodic oxidation treatment.

[0070] As shown in Figure 4, the worker then performs the removal process S17. Specifically, the worker removes the mask 101 from the outer surface on the third positive direction ZA side of the wiring body 25, the first aluminum body 26, the second aluminum body 27, the first aluminum oxide body 28, the second aluminum oxide body 29, and the aluminum oxide body 41.

[0071] As shown in Figure 4, the worker then performs the insulating layer formation process S18. Specifically, as shown in Figure 8, the worker forms an intermediate insulating layer 14Z on the outer surface of the wiring body 25, the first aluminum body 26, the second aluminum body 27, the first aluminum oxide body 28, the second aluminum oxide body 29, and the aluminum oxide body 41 on the third positive direction ZA side. At this time, when the semiconductor device 100 is viewed through with the third positive direction ZA facing the semiconductor device 100, the intermediate insulating layer 14Z is open in the central part of the aluminum oxide body 41. One example of a method by which the worker forms the intermediate insulating layer 14Z is the sputtering method or the CVD method. The material of the intermediate insulating layer 14Z is the same as the material of the second insulating layer 14. A portion of the intermediate insulating layer 14Z constitutes the second insulating layer 14.

[0072] As shown in Figure 4, the worker then performs the first electrode layer formation step S31. Specifically, as shown in Figure 8, the worker deposits the intermediate first electrode layer 46Z onto the outer surface of the aluminum oxide body 41 on the third positive direction ZA side, the inner surfaces of the multiple holes 42, the outer surface of the intermediate insulating layer 14Z on the third positive direction ZA side, and the outer surface of the intermediate barrier film 20Z on the third positive direction ZA side. One example of a method by which the worker deposits the intermediate first electrode layer 46Z is the ALD method. "ALD" is an abbreviation for Atomic Layer Deposition. The "ALD method" is also called atomic layer deposition. Here, the material of the intermediate first electrode layer 46Z is the same as the material of the first electrode layer 46. A portion of the intermediate first electrode layer 46Z constitutes the first electrode layer 46.

[0073] As shown in Figure 4, the worker then performs the dielectric layer formation process S32. Specifically, as shown in Figure 8, the worker laminates the intermediate dielectric layer 48Z on the outer surface of the intermediate first electrode layer 46Z on the third positive direction ZA side. In other words, the worker laminates the intermediate dielectric layer 48Z on the outer surface of the intermediate first electrode layer 46Z opposite to the aluminum oxide body 41. One example of a method by which the worker laminates the intermediate dielectric layer 48Z is the ALD method. Here, the material of the intermediate dielectric layer 48Z is the same as the material of the dielectric layer 48. A portion of the intermediate dielectric layer 48Z constitutes the dielectric layer 48.

[0074] As shown in Figure 4, the worker then performs the second electrode layer formation step S33. Specifically, as shown in Figure 8, the worker laminates the intermediate second electrode layer 47Z on the outer surface of the intermediate dielectric layer 48Z on the third positive direction ZA side. In other words, the worker laminates the intermediate second electrode layer 47Z on the outer surface of the intermediate dielectric layer 48Z opposite to the intermediate first electrode layer 46Z. One example of a method by which the worker laminates the intermediate second electrode layer 47Z is the ALD method. Here, the material of the intermediate second electrode layer 47Z is the same as the material of the second electrode layer 47. A portion of the intermediate second electrode layer 47Z constitutes the second electrode layer 47.

[0075] As shown in Figure 4, the worker then performs the removal process S34. Specifically, as shown in Figure 9, the worker removes the portion of the intermediate insulating layer 14Z, intermediate first electrode layer 46Z, intermediate dielectric layer 48Z, and intermediate second electrode layer 47Z where the second capacitor wiring layer 62 will be formed. The worker also removes the portion of the intermediate first electrode layer 46Z, intermediate dielectric layer 48Z, and intermediate second electrode layer 47Z where the third insulating layer 15 will be formed. As a result, the first electrode layer 46, the second electrode layer 47, and the dielectric layer 48 are formed.

[0076] As shown in Figure 4, the worker then performs the wiring layer formation process S35. Specifically, as shown in Figure 9, the worker forms the first capacitor wiring layer 61 on the outer surface of the second electrode layer 47 on the third positive direction ZA side. The worker also forms the second capacitor wiring layer 62 on the outer surface of the wiring body 25 on the third positive direction ZA side. One example of a method by which the worker forms the first capacitor wiring layer 61, etc., is the CVD method.

[0077] As shown in Figure 4, the worker then performs the insulating layer formation process S36. Specifically, as shown in Figure 10, the worker forms the intermediate insulating layer 15Z on the outer surface of the intermediate insulating layer 14Z on the third positive direction ZA side, the outer surface of the second electrode layer 47 on the third positive direction ZA side, the outer surface of the first capacitor wiring layer 61 on the third positive direction ZA side, and the outer surface of the second capacitor wiring layer 62 on the third positive direction ZA side. At this time, the intermediate insulating layer 15Z is not located in the area where the first connection part 86 and the second connection part 87 are formed. One example of a method by which the worker forms the intermediate insulating layer 15Z is photolithography. Here, the material of the intermediate insulating layer 15Z is the same as the material of the third insulating layer 15. Also, a portion of the intermediate insulating layer 15Z constitutes the third insulating layer 15.

[0078] As shown in Figure 4, the worker then performs the connection part formation process S37. Specifically, as shown in Figure 10, the worker forms a first connection part 86 on the outer surface of the first capacitor wiring layer 61 on the third positive direction ZA side. The worker also forms a second connection part 87 on the outer surface of the second capacitor wiring layer 62 on the third positive direction ZA side. One example of a method by which the worker forms the first connection part 86, etc., is vapor deposition.

[0079] As shown in Figure 4, the worker then performs the first wiring formation process S38. Specifically, as shown in Figure 10, the worker forms the first layer 81A of the first columnar wiring 81 on the outer surface of the first connection portion 86 on the third positive direction ZA side and on the outer surface of the intermediate insulating layer 15Z on the third positive direction ZA side. The worker also forms the first portion 56 of the inductor wiring 51 on the outer surface of the intermediate insulating layer 15Z on the third positive direction ZA side. Furthermore, the worker forms the first layer 82A of the second columnar wiring 82 on the outer surface of the second connection portion 87 on the third positive direction ZA side and on the outer surface of the intermediate insulating layer 15Z on the third positive direction ZA side. One example of a method by which the worker forms the first layer 81A of the first columnar wiring 81 is the semi-additive method. Although not shown in the figures, the worker forms a seed layer made of copper when forming the first layer 81A of the first columnar wiring 81.

[0080] As shown in Figure 4, the worker then performs the insulator formation process S39. Specifically, as shown in Figure 11, the worker forms an intermediate insulator 16Z on the outer surface of the intermediate insulating layer 15Z on the third positive direction ZA side. At this time, the intermediate insulator 16Z is not located in the area where the second layer 81B of the first columnar wiring 81, the second portion 57 of the inductor wiring 51, the fourth portion 59 of the inductor wiring 51, or the second layer 82B of the second columnar wiring 82 are formed. One example of a method by which the worker forms the intermediate insulator 16Z is photolithography. Here, the material of the intermediate insulator 16Z is the same as the material of the insulator 16. Also, a portion of the intermediate insulator 16Z constitutes the insulator 16.

[0081] As shown in Figure 4, the worker then performs the resist formation process S51. Specifically, the worker forms the resist 102 on the outer surface of the intermediate insulator 16Z on the third positive direction ZA side. At this time, the resist 102 is not located in the areas where the third layer 81C of the first columnar wiring 81, the third portion 58 of the inductor wiring 51, and the third layer 82C of the second columnar wiring 82 are formed. One example of a method by which the worker forms the resist 102 is photolithography.

[0082] As shown in Figure 4, the worker then performs the second wiring formation process S52. Specifically, as shown in Figure 11, the worker forms the second layer 81B and the third layer 81C of the first columnar wiring 81 on the outer surface of the first layer 81A of the first columnar wiring 81 on the third positive direction ZA side. The worker also forms the second portion 57, the third portion 58, and the fourth portion 59 of the inductor wiring 51 on the outer surface of the first portion 56 of the inductor wiring 51 on the third positive direction ZA side. Furthermore, the worker forms the second layer 82B and the third layer 82C of the second columnar wiring 82 on the outer surface of the first layer 82A of the second columnar wiring 82 on the third positive direction ZA side. One example of a method by which the worker forms the second layer 81B, etc. of the first columnar wiring 81 is the filled plating method. In this embodiment, the first wiring formation step S38 and the second wiring formation step S52 are examples of wiring formation steps that form inductor wiring 51 on the third positive direction ZA side with respect to the second electrode layer 47 of the capacitor portion 30.

[0083] As shown in Figure 4, the worker then performs the peeling process S53. Specifically, the worker peels off the resist 102 on the outer surface of the intermediate insulator 16Z on the third positive direction ZA side.

[0084] As shown in Figure 4, the worker then performs the insulating layer formation process S54. Specifically, as shown in Figure 12, the worker forms the intermediate insulating layer 17Z on the outer surface of the intermediate insulator 16Z on the third positive direction ZA side, the outer surface of the first columnar wiring 81 on the third positive direction ZA side, the outer surface of the second columnar wiring 82 on the third positive direction ZA side, and the outer surface of the inductor wiring 51 on the third positive direction ZA side. At this time, the intermediate insulating layer 17Z is not located in the area where the third connection part 88, the fourth connection part 89, and the fifth connection part 90 are formed. One example of a method by which the worker forms the intermediate insulating layer 17Z is photolithography. Here, the material of the intermediate insulating layer 17Z is the same as the material of the fourth insulating layer 17. Also, a portion of the intermediate insulating layer 17Z constitutes the fourth insulating layer 17.

[0085] As shown in Figure 4, the worker then performs the connection part formation process S55. Specifically, as shown in Figure 12, the worker forms a third connection part 88 on the outer surface of the first columnar wiring 81 on the third positive direction ZA side. The worker also forms a fourth connection part 89 on the outer surface of the second end 51B of the inductor wiring 51 on the third positive direction ZA side. Furthermore, the worker forms a fifth connection part 90 on the outer surface of the second columnar wiring 82 on the third positive direction ZA side. One example of a method by which the worker forms the third connection part 88, etc., is electroless plating.

[0086] As shown in Figure 4, the worker then performs the terminal formation process S56. Specifically, as shown in Figure 12, the worker forms the first terminal 91 on the outer surface of the third connection portion 88 on the third positive direction ZA side and on the outer surface of the intermediate insulating layer 17Z on the third positive direction ZA side. The worker also forms the second terminal 92 on the outer surface of the fourth connection portion 89 on the third positive direction ZA side and on the outer surface of the intermediate insulating layer 17Z on the third positive direction ZA side. Furthermore, the worker forms the third terminal 93 on the outer surface of the fifth connection portion 90 on the third positive direction ZA side and on the outer surface of the intermediate insulating layer 17Z on the third positive direction ZA side. One example of a method by which the worker forms the first terminal 91, etc., is electroless plating.

[0087] As shown in Figure 4, the worker then performs the thickness adjustment process S57. Specifically, as shown in Figure 13, the worker forms the substrate 12 by removing a portion of the base substrate 12Z, including the end face in the third negative direction ZB.

[0088] As shown in Figure 4, the next step is to perform the individualization process S58. Specifically, as shown in Figure 13, the worker uses a dicing blade to separate the multiple integrally molded semiconductor devices 100 into individual semiconductor devices 100. In Figure 13, the cross-section SL of the semiconductor device 100 is shown by a dashed line. As a result, a semiconductor device 100 is formed.

[0089] <Operation of this embodiment> As shown in Figure 1, the semiconductor device 100 comprises a base body 10, a capacitor section 30, and an inductor section 50. In the capacitor section 30, the first electrode layer 46, the dielectric layer 48, and the second electrode layer 47 are formed to follow the inner surface of the pores 42 of the aluminum oxide body 41. In other words, the first electrode layer 46, the dielectric layer 48, and the second electrode layer 47 overlap in a curved manner along the inner surface of the pores 42 of the aluminum oxide body 41. Therefore, for example, even if the size of the area of ​​the first electrode layer 46 etc. is the same when viewing the semiconductor device 100 with the third positive direction ZA facing through it, the area in which the first electrode layer 46 etc. actually overlaps is larger compared to the case where the first electrode layer 46 etc. is a flat layer.

[0090] <Effects of this embodiment> (1-1) According to this embodiment, even if the dimensions of the capacitor portion 30 in the direction parallel to the first main surface 100A are the same, for example, the capacitance value of the capacitor portion 30 is larger compared to the case where the first electrode layer 46 etc. is a flat layer. As a result, it is possible to suppress the increase in the dimensions of the semiconductor device 100 in the direction parallel to the first main surface 100A due to the increase in the capacitance value of the capacitor portion 30. Moreover, in this embodiment, the inductor wiring 51 of the inductor portion 50 is located on a different layer from the capacitor portion 30 in the direction perpendicular to the first main surface 100A, and overlaps with the capacitor portion 30 when the semiconductor device 100 is viewed through in the third positive direction ZA. As a result, it is possible to suppress the increase in the dimensions of the semiconductor device 100 in the direction parallel to the first main surface 100A compared to the case where the inductor wiring 51 and the capacitor portion 30 are located on the same layer in the direction perpendicular to the first main surface 100A.

[0091] (1-2) As shown in Figure 3, the shape of the inductor wiring 51 is a spiral shape centered on a pivot axis parallel to the first main surface 100A. As shown in Figure 1, the maximum dimension 51MX of the inductor wiring 51 in the first positive direction XA is larger than the maximum dimension 41MX of the aluminum oxide body 41 of the capacitor section 30 in the first positive direction XA. In other words, the maximum dimension 51MX of the inductor wiring 51 in the direction parallel to the pivot axis is larger than the maximum dimension 41MX of the aluminum oxide body 41 of the capacitor section 30 in the direction parallel to the pivot axis.

[0092] Generally, the energy density of the inductor wiring 51 tends to be lower than that of the capacitor section 30. With the above configuration, for example, it is easier to increase the number of turns of the inductor wiring 51 compared to the case where the maximum dimension 51MX of the inductor wiring 51 is the same as the maximum dimension 41MX of the aluminum oxide body 41. This makes it easier to increase the inductance of the inductor wiring 51.

[0093] (1-3) As shown in Figure 1, the maximum dimension 59H of the fourth portion 59 in the direction perpendicular to the first main surface 100A is larger than the maximum dimension 58H of the third portion 58 in the direction perpendicular to the first main surface 100A. With the above configuration, for example, compared to the case where the maximum dimension 59H of the fourth portion 59 in the direction perpendicular to the first main surface 100A is the same as the maximum dimension 58H of the third portion 58 in the direction perpendicular to the first main surface 100A, the area of ​​the portion surrounded by the inductor wiring 51 is larger when viewing the semiconductor device 100 in a direction parallel to the pivot axis of the inductor wiring 51. This makes it possible to increase the inductance of the inductor wiring 51.

[0094] (1-4) As shown in Figure 3, the shape of the inductor wiring 51 is a spiral shape centered on a pivot axis parallel to the first main surface 100A. As shown in Figure 1, the maximum dimension 51MZ of the inductor wiring 51 in the direction perpendicular to the first main surface 100A is larger than the maximum dimension 30MZ of the capacitor section 30 in the direction perpendicular to the first main surface 100A. With the above configuration, for example, compared to the case where the maximum dimension 51MX of the inductor wiring 51 is the same as the maximum dimension 30MZ of the capacitor section 30, the area of ​​the portion surrounded by the inductor wiring 51 is larger when viewing the semiconductor device 100 in the direction parallel to the pivot axis of the inductor wiring 51. This makes it possible to increase the inductance of the inductor wiring 51.

[0095] (1-5) As shown in Figure 1, the semiconductor device 100 comprises a first capacitor section 30A and a second capacitor section 30B as a capacitor section 30. The entirety of the second capacitor section 30B is located in the same layer as the entirety of the first capacitor section 30A in a direction perpendicular to the first main surface 100A. The first capacitor wiring layer 61 extends as a whole in a direction parallel to the first main surface 100A. The first capacitor wiring layer 61 is in contact with the second electrode layer 47 of the first capacitor section 30A and the second electrode layer 47 of the second capacitor section 30B. The first capacitor wiring layer 61 is electrically connected to the second electrode layer 47 of the first capacitor section 30A and the second electrode layer 47 of the second capacitor section 30B. The minimum dimension 61H of the first capacitor wiring layer 61 in a direction perpendicular to the first main surface 100A is smaller than the minimum width dimension 51W of the inductor wiring 51. According to the above configuration, for example, the material cost of the first capacitor wiring layer 61 can be reduced compared to the case where the minimum dimension 61H of the first capacitor wiring layer 61 is the same as the minimum width dimension 51W of the inductor wiring 51. This is expected to reduce the manufacturing cost of the semiconductor device 100. In addition, since no electricity flows between the multiple capacitor sections 30, the effect is small even if the minimum dimension 61H of the first capacitor wiring layer 61 is reduced.

[0096] (1-6) As shown in Figure 2, when the semiconductor device 100 is viewed through in the third negative direction ZB, the aluminum oxide body 41 extends from the end of the second positive direction YA to the end of the second negative direction YB in the region where the barrier film 20 exists. In other words, the outer surface of the aluminum oxide body 41 is exposed on the outer surface of the base body 10. Furthermore, some of the multiple holes 42 in the aluminum oxide body 41 are open in the portion of the aluminum oxide body 41 that is exposed on the outer surface of the base body 10. With the above configuration, since the holes 42 are open on the outer surface of the semiconductor device 100, the heat dissipation of the semiconductor device 100 can be improved.

[0097] (1-7) As shown in Figure 1, the semiconductor device 100 is provided with a first columnar wiring 81. The first columnar wiring 81 is electrically connected to the second electrode layer 47 of the two capacitor sections 30 via a first connection section 86 and a first capacitor wiring layer 61. The first columnar wiring 81 extends in a direction perpendicular to the first main surface 100A on the side of the capacitor section 30 where the inductor wiring 51 is located. With the above configuration, electricity can be supplied to the capacitor section 30 via the first columnar wiring 81 from the side of the capacitor section 30 where the inductor wiring 51 is located. Therefore, for example, the constraint on the configuration for supplying electricity to the capacitor section 30 due to the presence of the inductor wiring 51 can be suppressed. The second columnar wiring 82 provides the same effect as the first columnar wiring 81.

[0098] (1-8) As shown in Figure 1, the semiconductor device 100 comprises a first capacitor section 30A and a second capacitor section 30B as a capacitor section 30. The entirety of the second capacitor section 30B is located in the same layer as the entirety of the first capacitor section 30A in a direction perpendicular to the first main surface 100A. The semiconductor device 100 also comprises a barrier film 20 and a plurality of second columnar wirings 82. The barrier film 20 is in contact with the first electrode layer 46 of the first capacitor section 30A and the first electrode layer 46 of the second capacitor section 30B. The barrier film 20 is electrically connected to the first electrode layer 46 of the first capacitor section 30A and the first electrode layer 46 of the second capacitor section 30B. The plurality of second columnar wirings 82 are electrically connected to the barrier film 20 via a second connection section 87, a second capacitor wiring layer 62, and a wiring body 25. According to the above configuration, multiple second columnar wirings 82 are electrically connected to the first electrode layers 46 of multiple capacitor sections 30 via a barrier film 20 or the like. Therefore, a large amount of power can be supplied to the capacitor sections 30 via the multiple second columnar wirings 82.

[0099] (1-9) As shown in Figure 1, the element 10 is equipped with an insulator 16. The insulator 16 covers the outer surface of the inductor wiring 51. The effective relative permeability of at least a portion of the insulator 16 is greater than 1. With the above configuration, magnetic noise can be removed by the insulator 16. Furthermore, an improvement in the inductance of the inductor section 50 can be expected.

[0100] (1-10) As shown in Figure 4, the workers perform the intermediate formation process S14. Specifically, as shown in Figure 6, the workers form an intermediate 41Z mainly composed of aluminum on the main surface 12ZA of the base substrate 12Z via an intermediate insulating layer 13Z and an intermediate barrier film 20Z. As shown in Figure 4, the workers perform the anodizing process S16. Specifically, as shown in Figure 7, the workers use anodizing to convert a portion of the intermediate 41Z into an aluminum oxide body 41 having a plurality of holes 42 extending from the outer surface on the third positive direction ZA side to the third negative direction ZB side. As shown in Figure 4, the workers perform the first electrode layer formation process S31. Specifically, as shown in Figure 8, the worker laminates the intermediate first electrode layer 46Z on the outer surface of the aluminum oxide body 41 on the third positive direction ZA side, the inner surfaces of the multiple holes 42, the outer surface of the intermediate insulating layer 14Z on the third positive direction ZA side, and the outer surface of the intermediate barrier film 20Z on the third positive direction ZA side. As shown in Figure 4, the worker performs the dielectric layer formation process S32. Specifically, as shown in Figure 8, the worker laminates the intermediate dielectric layer 48Z on the outer surface of the intermediate first electrode layer 46Z opposite to the aluminum oxide body 41. As shown in Figure 4, the worker performs the second electrode layer formation process S33. Specifically, as shown in Figure 8, the worker laminates the intermediate second electrode layer 47Z on the outer surface of the intermediate dielectric layer 48Z opposite to the intermediate first electrode layer 46Z. As shown in Figure 4, the worker performs the first wiring formation process S38. Specifically, as shown in Figure 10, the worker forms the first portion 56 of the inductor wiring 51 on the outer surface of the intermediate insulating layer 15Z on the third positive direction ZA side. As shown in Figure 4, the worker performs the second wiring formation step S52. Specifically, as shown in Figure 11, the worker forms the second portion 57, the third portion 58, and the fourth portion 59 of the inductor wiring 51 on the outer surface of the first portion 56 of the inductor wiring 51 on the third positive direction ZA side.

[0101] According to the above configuration, by using an anodic oxidation method, an aluminum oxide body 41 containing multiple pores 42 can be formed in a simple manner from a portion of the aluminum-based intermediate 41Z. Furthermore, according to the above configuration, the inductor wiring 51 is formed in a different layer from the capacitor portion 30 in a direction perpendicular to the first main surface 100A. As a result, while manufacturing the semiconductor device 100 in a relatively simple manner, it is possible to suppress the increase in the dimensions of the semiconductor device 100 in the direction parallel to the first main surface 100A, which is caused by an increase in the capacitance value of the capacitor portion 30.

[0102] (1-11) In the first electrode layer formation step S31, the workers deposit an intermediate first electrode layer 46Z by the ALD method, i.e., by atomic layer deposition. In the dielectric layer formation step S32, the workers deposit an intermediate dielectric layer 48Z by the ALD method, i.e., by atomic layer deposition. Furthermore, in the second electrode layer formation step S33, the workers deposit an intermediate second electrode layer 47Z by the ALD method, i.e., by atomic layer deposition. With the above configuration, since the intermediate first electrode layer 46Z, intermediate dielectric layer 48Z, and intermediate second electrode layer 47Z are deposited by atomic layer deposition, homogeneous and thin first electrode layer 46, dielectric layer 48, and second electrode layer 47 can be formed more reliably.

[0103] <Second Embodiment> The second embodiment of the present disclosure will now be described with reference to Figure 14. The second embodiment differs in some aspects of its configuration from the first embodiment. Specifically, the semiconductor device 200 of the second embodiment has a different configuration in part of the inductor section 50. Also, the semiconductor device 200 of the second embodiment has a first positive columnar wiring 281, two second positive columnar wirings 282, and three negative columnar wirings 283 instead of the first columnar wiring 81 and two second columnar wirings 82. In the description of the second embodiment, the differences from the first embodiment will be the main focus, and components similar to those in the first embodiment will be denoted by the same reference numerals, and their descriptions will be omitted or simplified.

[0104] As shown in Figure 14, the inductor section 50 is equipped with inductor wiring 251 instead of inductor wiring 51. The shape of the inductor wiring 251 is a spiral shape centered on a pivot axis parallel to the first main surface 100A. The pivot axis of the inductor wiring 251 is parallel to the first axis X. The maximum dimension of the inductor wiring 251 in the direction perpendicular to the first main surface 100A is greater than the maximum dimension of the inductor wiring 251 in the direction parallel to the second axis Y. In other words, the maximum dimension of the inductor wiring 251 in the direction perpendicular to the first main surface 100A is greater than the maximum dimension of the inductor wiring 251 in the direction parallel to the first main surface 100A and perpendicular to the pivot axis.

[0105] The configuration of the first positive columnar wiring 281 is the same as that of the first columnar wiring 81. That is, the first positive columnar wiring 281 is located inside the base body 10. The first positive columnar wiring 281 is also electrically connected to the capacitor section 30. The first positive columnar wiring 281 extends in a direction perpendicular to the first main surface 100A on the third positive direction ZA side relative to the capacitor section 30. The first terminal 91 is an external terminal that contacts the outer surface of the base body 10 on the third positive direction ZA side and is electrically connected to the first positive columnar wiring 281.

[0106] The configuration of the second positive columnar wiring 282 is the same as that of the second columnar wiring 82. That is, the second positive columnar wiring 282 is located inside the base body 10. The second positive columnar wiring 282 is also electrically connected to the capacitor section 30. The second positive columnar wiring 282 extends in a direction perpendicular to the first main surface 100A on the third positive direction ZA side relative to the capacitor section 30. The third terminal 93 is an external terminal that contacts the outer surface of the base body 10 on the third positive direction ZA side and is electrically connected to the second positive columnar wiring 282.

[0107] The negative columnar wiring 283 is located inside the substrate 12 and the first insulating layer 13. In other words, the negative columnar wiring 283 is located inside the base body 10. The negative columnar wiring 283 is in contact with the outer surface of the barrier film 20 on the third negative direction ZB side. The negative columnar wiring 283 extends from the barrier film 20 toward the third negative direction ZB. The outer surface of the negative columnar wiring 283 toward the third negative direction ZB is exposed on the outer surface of the substrate 12 toward the third negative direction ZB side. The negative columnar wiring 283 is electrically connected to the capacitor section 30 via the barrier film 20. Furthermore, the negative columnar wiring 283 extends toward the capacitor section 30 in a direction perpendicular to the first main surface 100A toward the third negative direction ZB side. An example of the material of the negative columnar wiring 283 is a metal mainly composed of copper.

[0108] <Effects of this embodiment> In this embodiment, in addition to the effects of (1-1) to (1-11) described above, the following effects of (2-1) to (2-3) are achieved.

[0109] (2-1) As shown in Figure 14, the inductor section 50 is equipped with inductor wiring 251. The shape of the inductor wiring 251 is a spiral shape centered on a pivot axis parallel to the first main surface 100A. The maximum dimension of the inductor wiring 251 in the direction perpendicular to the first main surface 100A is larger than the maximum dimension of the inductor wiring 251 in the direction parallel to the first main surface 100A and perpendicular to the pivot axis. With the above configuration, for example, compared to the case where the maximum dimension of the inductor wiring 251 in the direction perpendicular to the first main surface 100A is the same as the maximum dimension of the inductor wiring 251 in the direction parallel to the first main surface 100A and perpendicular to the pivot axis, the area of ​​the portion surrounded by the inductor wiring 251 when viewing the semiconductor device 200 in the direction parallel to the pivot axis of the inductor wiring 251 is larger. This makes it possible to increase the inductance of the inductor wiring 251.

[0110] Furthermore, with the above configuration, for example, compared to the case where the maximum dimension of the inductor wiring 251 in the direction parallel to the first main surface 100A and perpendicular to the pivot axis is larger than the maximum dimension of the inductor wiring 251 in the direction perpendicular to the first main surface 100A, it is possible to suppress the increase in the dimensions of the semiconductor device 100 in the direction parallel to the first main surface 100A.

[0111] (2-2) As shown in Figure 14, the semiconductor device 200 is provided with a first positive columnar wiring 281 and a negative columnar wiring 283. The first positive columnar wiring 281 is electrically connected to the capacitor section 30. The first positive columnar wiring 281 extends in a direction perpendicular to the first main surface 100A on the third positive direction ZA side relative to the capacitor section 30. The negative columnar wiring 283 is electrically connected to the capacitor section 30. The negative columnar wiring 283 also extends in a direction perpendicular to the first main surface 100A on the third negative direction ZB side relative to the capacitor section 30. Here, for example, when the semiconductor device 200 is mounted, the first electronic component is located on the third positive direction ZA side relative to the semiconductor device 200, and the second electronic component is located on the third negative direction ZB side relative to the semiconductor device 200. Even if such a situation occurs, the semiconductor device 200 described above can supply power from one of the first electronic component and the second electronic component to the other via the first positive columnar wiring 281 and the negative columnar wiring 283.

[0112] (2-3) As shown in Figure 14, the first terminal 91 is in contact with the outer surface of the base body 10 on the third positive direction ZA side and is electrically connected to the first positive side columnar wiring 281. With the above configuration, for example, the unevenness of the outer surface of the semiconductor device 200 on the third positive direction ZA side becomes larger compared to when the first terminal 91 is absent. In other words, for example, the flatness of the outer surface of the semiconductor device 200 on the third positive direction ZA side becomes smaller compared to when the first terminal 91 is absent. As a result, the flatness of the outer surface of the semiconductor device 200 on the third positive direction ZA side becomes smaller than the flatness of the outer surface of the semiconductor device 200 on the third negative direction ZB side. This makes it easier to detect the position of each part on the third positive direction ZA side of the semiconductor device 200, for example, at the time of manufacturing the semiconductor device 200. The third terminal 93 has the same effect as the first terminal 91 described above.

[0113] <Examples of Modifications> This embodiment can be implemented with the following modifications. This embodiment and the following examples of modifications can be combined with each other to the extent that they do not contradict each other technically.

[0114] In the first embodiment described above, the configuration of the base body 10 may be changed. For example, the electrical resistance of the substrate 12 may be smaller than the electrical resistance of the aluminum oxide body 41. In other words, the substrate 12 may function as a conductor. As a specific example, as shown in Figure 15, the semiconductor device 100 does not have a first insulating layer 13. The outer surface of the substrate 12 on the third positive direction ZA side is in contact with the outer surface of the barrier film 20 on the third negative direction ZB side. That is, the substrate 12 is electrically connected to the capacitor portion 30 on the side opposite to the inductor wiring 51. With this configuration, power can be supplied to the capacitor portion 30 via the substrate 12 located on the side opposite to the inductor wiring 51.

[0115] For example, the material of the substrate 12 may be changed. As a specific example, in the semiconductor device 100 shown in Figure 15 above, the substrate 12 may contain nickel. In this case, it is preferable that the nickel content of the substrate 12 is higher than the nickel content of the insulator 16. With this configuration, for example, the electrical resistance of the substrate 12 can be reduced compared to the case where the nickel content of the substrate 12 is the same as the nickel content of the insulator 16.

[0116] - For example, the shape of the substrate 12 may be changed. As a specific example, in the semiconductor device 100 shown in Figure 15 above, it is preferable that the maximum dimension of the substrate 12 in the direction perpendicular to the first main surface 100A is smaller than the maximum dimension 30MZ of the capacitor portion 30 in the direction perpendicular to the first main surface 100A. With this configuration, for example, the electrical resistance of the substrate 12 when supplying power to the capacitor portion 30 via the substrate 12 can be reduced compared to the case where the maximum dimension of the substrate 12 in the direction perpendicular to the first main surface 100A is the same as the maximum dimension 30MZ of the capacitor portion 30 in the direction perpendicular to the first main surface 100A.

[0117] Regarding the above example, if the electrical resistance of the substrate 12 is sufficiently small, the maximum dimension of the substrate 12 in the direction perpendicular to the first main surface 100A may be greater than or equal to the maximum dimension of the capacitor portion 30 in the direction perpendicular to the first main surface 100A, which is 30 MZ.

[0118] For example, the effective relative permeability of the insulator 16 may be 1 or less. Specifically, if there is little need to improve the inductance of the inductor section 50, the above configuration may be adopted.

[0119] In the first embodiment described above, the configuration of the capacitor section 30 may be changed. For example, the number of capacitor sections 30 may be changed. Specifically, the semiconductor device 100 may have one capacitor section 30, or it may have three or more capacitor sections 30.

[0120] For example, the position of the aluminum oxide body 41 relative to the base body 10 may be changed. Specifically, the outer surface of the aluminum oxide body 41 does not have to be exposed on the outer surface of the base body 10. For example, if there is little need to improve the heat dissipation of the semiconductor device 100, the above configuration may be adopted.

[0121] - In the first embodiment described above, the configuration of the inductor section 50 may be changed. For example, the shape of the inductor wiring 51 may be changed. As a specific example, as shown in Figure 17, when the semiconductor device 100 is viewed through with the third positive direction ZA facing the third positive direction, the pivot axis of the inductor wiring 51 may extend in an annular shape. With the above configuration, magnetic flux leaking from the inductor wiring 51 can be suppressed.

[0122] Furthermore, regarding the shape of the inductor wiring 51, the maximum dimension 51MX of the inductor wiring 51 in the direction parallel to the pivot axis may be less than or equal to the maximum dimension 41MX of the aluminum oxide body 41 of the capacitor section 30 in the direction parallel to the pivot axis. For example, if there is little need to increase the inductance of the inductor wiring 51, the above configuration may be adopted.

[0123] Furthermore, regarding the shape of the inductor wiring 51, the maximum dimension 59H of the fourth portion 59 in the direction perpendicular to the first main surface 100A may be less than or equal to the maximum dimension 58H of the third portion 58 in the direction perpendicular to the first main surface 100A. Similarly, the maximum dimension 59H of the fourth portion 59 in the direction perpendicular to the first main surface 100A may be less than or equal to the maximum dimension 56H of the first portion 56 in the direction perpendicular to the first main surface 100A.

[0124] For example, the inductor section 50 may be equipped with multiple inductor wirings. As a specific example, as shown in Figure 18, the inductor section 50 may be equipped with a first inductor wiring 351 and a second inductor wiring 352 instead of the inductor wiring 51. The shape of the first inductor wiring 351 is a spiral shape centered on a pivot axis parallel to the first main surface 100A. The pivot axis of the first inductor wiring 351 is parallel to the first axis X. The second inductor wiring 352 is located on the same layer as the first inductor wiring 351 in a direction perpendicular to the first main surface 100A. The second inductor wiring 352 is located on the second negative direction YB side relative to the first inductor wiring 351. The shape of the second inductor wiring 352 is a spiral shape centered on a pivot axis parallel to the first main surface 100A. The pivot axis of the second inductor wiring 352 is parallel to the first axis X. With this configuration, for example, the inductance of the inductor section 50 can be increased compared to the case where only one of the first inductor wiring 351 and the second inductor wiring 352 is provided.

[0125] Furthermore, in the above example, if the inductor section 50 includes a first inductor wiring 351 and a second inductor wiring 352, it is preferable that the pivot axis of the second inductor wiring 352 is coaxial with the pivot axis of the first inductor wiring 351, as shown in Figure 19. In other words, it is preferable that the pivot axes of multiple inductor wirings be coaxial. With this configuration, for example, the inductance of the inductor section 50 can be increased compared to the case where the pivot axes of multiple inductor wirings are not coaxial.

[0126] For example, the pivot axis of the inductor wiring 251 does not have to be parallel to the first axis X. Specifically, the pivot axis of the inductor wiring 251 may be inclined with respect to the first axis X, as long as it is parallel to the first main surface 100A.

[0127] For example, the relationship between the inductor section 50 and the capacitor section 30 may be changed. Specifically, the maximum dimension 51MZ of the inductor wiring 51 in the direction perpendicular to the first main surface 100A may be less than or equal to the maximum dimension 30MZ of the capacitor section 30 in the direction perpendicular to the first main surface 100A. For example, if there is little need to increase the inductance of the inductor wiring 51, the above configuration may be adopted.

[0128] - Furthermore, regarding the relative configuration of the inductor section 50 and the capacitor section 30, the inductor wiring 51 may be located on the third negative direction ZB side with respect to the capacitor section 30. - Moreover, regarding the relative configuration of the inductor section 50 and the capacitor section 30, when the semiconductor device 100 is viewed through in the third positive direction ZA, the inductor wiring 51 may overlap with only one of the first capacitor section 30A and the second capacitor section 30B.

[0129] ・In the first embodiment described above, other configurations of the semiconductor device 100 may be changed. For example, the number of first columnar wirings 81 and second columnar wirings 82 provided by the semiconductor device 100 may be changed. As a specific example, as shown in Figure 16, the semiconductor device 100 may have one first columnar wiring 81 and six second columnar wirings 82. In this case, the number of columnar wirings located inside the base body 10, extending in a direction perpendicular to the first main surface 100A, and electrically connected to the capacitor section 30 is seven. Here, the portion of the inductor wiring 51 that extends in a direction perpendicular to the first main surface 100A, i.e., the second portion 57 and the fourth portion 59, are each defined as columnar sections. In this configuration, the number of columnar sections is three. In other words, the number of columnar wirings is greater than the number of columnar sections. With this configuration, for example, the power supplied to the capacitor section 30 via multiple columnar wirings can be increased compared to the case where the number of columnar wirings is the same as the number of columnar sections.

[0130] Furthermore, regarding the number of first columnar wirings 81 and second columnar wirings 82, the semiconductor device 100 does not need to have multiple second columnar wirings 82. For example, the semiconductor device 100 may have one second columnar wiring 82. However, as long as a large amount of power can be supplied to the capacitor section 30 via one second columnar wiring 82, the above configuration may be adopted.

[0131] For example, the semiconductor device 100 does not need to have the first terminal 91, the second terminal 92, and the third terminal 93. For example, if the positions of each part on the third positive direction ZA side of the semiconductor device 200 can be sufficiently detected at the time of manufacturing the semiconductor device 200, the first terminal 91 and the like may be omitted.

[0132] For example, the semiconductor device 100 may have terminals other than the first terminal 91, the second terminal 92, and the third terminal 93. Specifically, the semiconductor device 100 may have an external terminal that contacts the outer surface of the base body 10 on the third negative direction ZB side.

[0133] For example, the positions of the first columnar wiring 81 and the second columnar wiring 82 may be changed. Specifically, the first columnar wiring 81 may extend in a direction perpendicular to the first main surface 100A on the side opposite to the side where the inductor wiring 51 is located relative to the capacitor section 30.

[0134] For example, the shapes of the first capacitor wiring layer 61 and the second capacitor wiring layer 62 may be changed. Specifically, the minimum dimension 61H of the first capacitor wiring layer 61 in the direction perpendicular to the first main surface 100A may be greater than or equal to the minimum width dimension 51W of the inductor wiring 51. For example, if there is little need to reduce the manufacturing cost of the semiconductor device 100, the above configuration may be adopted.

[0135] - In the first embodiment described above, the method for manufacturing the semiconductor device 100 may be changed. For example, in the first electrode layer formation step S31, the worker may laminate the intermediate first electrode layer 46Z using a method other than the ALD method. Similarly, in the dielectric layer formation step S32 and the second electrode layer formation step S33, the method for forming the intermediate dielectric layer 48Z and the intermediate second electrode layer 47Z may be changed.

[0136] For example, the worker may perform the connection part formation process S55 and the terminal formation process S56 simultaneously. That is, the worker may form the third connection part 88, the fourth connection part 89, the fifth connection part 90, the first terminal 91, the second terminal 92, and the third terminal 93 in the same process.

[0137] In the second embodiment described above, the configuration of the inductor section 50 may be changed. For example, the shape of the inductor wiring 251 may be changed. Specifically, the maximum dimension of the inductor wiring 251 in the direction perpendicular to the first main surface 100A may be less than or equal to the maximum dimension of the inductor wiring 251 in the direction parallel to the first main surface 100A and perpendicular to the pivot axis.

[0138] 10...Base body 12...Substrate 13...First insulating layer 14...Second insulating layer 15...Third insulating layer 16...Insulator 17...Fourth insulating layer 20...Barrier film 25...Wiring body 26...First aluminum body 27...Second aluminum body 28...First aluminum oxide body 29...Second aluminum oxide body 30...Capacitor section 41...Aluminum oxide body 42...Hole 46...First electrode layer 47...Second electrode layer 48...Dielectric layer 50...Inductor section 51...Inductor wiring 61...First capacitor wiring layer 62...Second capacitor wiring layer 81...First columnar wiring 82...Second columnar wiring 86...First connection part 87...Second connection part 88...Third connection part 89...Fourth connection part 90...Fifth connection part 91...First terminal 92...Second terminal 93...Third terminal 100... Semiconductor device 100A... First main surface

Claims

1. A semiconductor device comprising: a base body having a planar main surface; a capacitor portion located inside the base body; and an inductor portion located inside the base body, wherein when a specific direction perpendicular to the main surface is defined as the positive direction and the direction opposite to the positive direction is defined as the negative direction, the capacitor portion comprises: an aluminum oxide body having a plurality of holes extending from the outer surface on the positive direction side to the negative direction side; a first electrode layer laminated on the outer surface on the positive direction side of the aluminum oxide body and on the inner surfaces of the plurality of holes; a dielectric layer laminated on the side opposite to the aluminum oxide body relative to the first electrode layer; and a second electrode layer laminated on the side opposite to the first electrode layer relative to the dielectric layer, wherein the inductor portion comprises inductor wiring that revolves around a pivot axis parallel to the main surface, and the inductor wiring is located on a different layer from the capacitor portion in a direction perpendicular to the main surface, and overlaps with the capacitor portion when viewed through in the positive direction.

2. The semiconductor device according to claim 1, wherein the inductor wiring is spiral in shape with respect to the pivot axis, and the maximum dimension of the inductor wiring in the direction parallel to the pivot axis is greater than the maximum dimension of the aluminum oxide body in the direction parallel to the pivot axis.

3. The semiconductor device according to claim 1 or 2, wherein the inductor wiring is spiral in shape with respect to the pivot axis, and the inductor wiring comprises a first connecting portion extending in a direction perpendicular to the main surface and a second connecting portion extending in a direction parallel to the main surface, and the maximum dimension of the first connecting portion in the direction perpendicular to the main surface is greater than the maximum dimension of the second connecting portion in the direction perpendicular to the main surface.

4. The semiconductor device according to any one of claims 1 to 3, wherein the inductor wiring is spiral in shape with respect to the pivot axis, and the maximum dimension of the inductor wiring in a direction perpendicular to the main surface is greater than the maximum dimension of the capacitor portion in a direction perpendicular to the main surface.

5. A semiconductor device according to any one of claims 1 to 4, comprising: a plurality of capacitor portions, some or all of which are located in the same layer in a direction perpendicular to the main surface; and a routing wire located inside the body, extending in a direction parallel to the main surface, in contact with the second electrode layer of the plurality of capacitor portions, and electrically connected to the second electrode layer of the plurality of capacitor portions, wherein the minimum dimension of the routing wire in a direction perpendicular to the main surface is smaller than the minimum width dimension of the inductor wiring.

6. The semiconductor device according to any one of claims 1 to 5, wherein the aluminum oxide body is exposed on the outer surface of the base body, and a portion of the plurality of holes is opened in the portion of the aluminum oxide body that is exposed on the outer surface of the base body.

7. A semiconductor device according to any one of claims 1 to 6, comprising a columnar wiring located inside the main body, extending in a direction perpendicular to the main surface, and electrically connected to the capacitor portion, wherein the columnar wiring extends in a direction perpendicular to the main surface on the side of the capacitor portion where the inductor wiring is located.

8. A semiconductor device according to any one of claims 1 to 7, comprising: a positive columnar wiring located inside the base body, extending in a direction perpendicular to the main surface, and electrically connected to the capacitor portion; and a negative columnar wiring located inside the base body, extending in a direction perpendicular to the main surface, and electrically connected to the capacitor portion, wherein the positive columnar wiring extends in a direction perpendicular to the main surface on the positive side relative to the capacitor portion, and the negative columnar wiring extends in a direction perpendicular to the main surface on the negative side relative to the capacitor portion.

9. The semiconductor device according to claim 8, further comprising an external terminal that contacts the outer surface on the positive side of the substrate and is electrically connected to the positive side columnar wiring.

10. A semiconductor device according to any one of claims 1 to 9, comprising: a plurality of capacitor portions, some or all of which are located in the same layer in a direction perpendicular to the main surface; a common wiring located inside the substrate, in contact with the first electrode layer of the plurality of capacitor portions, and electrically connected to the first electrode layer of the plurality of capacitor portions; and a plurality of columnar wirings located inside the substrate, extending in a direction perpendicular to the main surface, and electrically connected to the common wiring.

11. The semiconductor device according to any one of claims 1 to 10, wherein the element comprises an insulator having a higher electrical resistance than the aluminum oxide body, and a substrate having a lower electrical resistance than the aluminum oxide body, the insulator covering the outer surface of the inductor wiring, and the substrate electrically connected to the capacitor portion on the side opposite to the inductor wiring.

12. The semiconductor device according to claim 11, wherein the substrate contains nickel, and the nickel content of the substrate is higher than the nickel content of the insulator.

13. The semiconductor device according to claim 11 or claim 12, wherein the maximum dimension of the substrate in a direction perpendicular to the main surface is smaller than the maximum dimension of the capacitor portion in a direction perpendicular to the main surface.

14. A semiconductor device according to any one of claims 1 to 13, comprising a plurality of columnar wirings located inside the main body, extending in a direction perpendicular to the main surface, and electrically connected to the capacitor portion, wherein when the portion of the inductor wiring extending in a direction perpendicular to the main surface is defined as a columnar portion, the number of the plurality of columnar wirings is greater than the number of columnar portions.

15. The semiconductor device according to any one of claims 1 to 14, wherein, when viewed through the device in the forward direction, the pivot axis extends in an annular shape.

16. A semiconductor device according to any one of claims 1 to 14, comprising a plurality of inductor wirings located in the same layer in a direction perpendicular to the main surface, wherein the plurality of pivot axes of the plurality of inductor wirings are coaxial.

17. The semiconductor device according to any one of claims 1 to 16, wherein the element comprises an insulator covering the outer surface of the inductor wiring, and the effective relative permeability of at least a portion of the insulator is greater than 1.

18. An intermediate formation step of forming an intermediate mainly composed of aluminum on the main surface of a base substrate; an anodic oxidation step, performed after the intermediate formation step, in which, when the direction perpendicular to the main surface is defined as the positive direction from the base substrate toward the intermediate and the opposite direction is defined as the negative direction, a part or all of the intermediate is converted into an aluminum oxide body having a plurality of holes extending from the outer surface on the positive direction side toward the negative direction by an anodic oxidation method; a first electrode layer formation step, performed after the anodic oxidation step, in which a first electrode layer is laminated on the outer surface on the positive direction side and on the inner surfaces of the plurality of holes of the aluminum oxide body; a dielectric layer formation step, performed after the first electrode layer formation step, in which a dielectric layer is laminated on the side of the first electrode layer opposite to the aluminum oxide body relative to the first electrode layer relative to the dielectric layer relative to the dielectric layer relative to the second electrode layer formation step, A method for manufacturing a semiconductor device, comprising a wiring formation step of forming an inductor wiring on the positive side of the second electrode layer after the second electrode layer formation step.

19. The method for manufacturing a semiconductor device according to claim 18, wherein in the first electrode layer formation step, the first electrode layer is stacked by atomic layer deposition; in the dielectric layer formation step, the dielectric layer is stacked by atomic layer deposition; and in the second electrode layer formation step, the second electrode layer is stacked by atomic layer deposition.

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