Semiconductor device and method for manufacturing semiconductor device

Abstract

A semiconductor device (100) comprises: an element body (10); a capacitor unit (30); and an inductor unit (50). The capacitor unit (30) and the inductor unit (50) are positioned inside the element body (10). The inductor unit (50) is positioned in the same layer as the capacitor unit (30) in a direction orthogonal to a first main surface (100A) of the element body (10). The capacitor unit (30) is provided with an aluminum oxide body (41), a first electrode layer (46), a dielectric layer (48), and a second electrode layer (47). The aluminum oxide body (41) has a plurality of holes (42) extending from an outer surface thereof on a third positive direction (ZA) side toward a third negative direction (ZB) side. The first electrode layer (46) is layered on the outer surface of the aluminum oxide body (41) facing the third positive direction (ZA) and inner surfaces of the plurality of holes (42). The dielectric layer (48) is layered on the side of the first electrode layer (46) opposite from the aluminum oxide body (41). The second electrode layer (47) is layered on the side of the dielectric layer (48) opposite from the first electrode layer (46).

Description

Semiconductor device and method for manufacturing semiconductor device

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing a semiconductor device.

[0002] The semiconductor device of Patent Document 1 includes a body, a capacitor, and an inductor. The capacitor is located inside the body. The inductor is located inside the body.

[0003] Japanese Patent Application Laid-Open No. 2023-550774

[0004] In a semiconductor device such as that of Patent Document 1, there may be a case where it is desired to increase the capacitance value of the capacitor. In this case, it is conceivable to increase the area of the electrode layer of the capacitor. However, in order to increase the area of the electrode layer of the capacitor, the dimensions of the semiconductor device in a direction parallel to the main surface of the semiconductor device have to be increased. In this case, the mounting area required to mount the semiconductor device on a substrate or the like becomes large, which is not preferable.

[0005] The semiconductor device for solving the above problems includes a body having a planar main surface, a capacitor portion located inside the body, and an inductor portion located inside the body and partially or entirely located in the same layer as the capacitor portion in a direction orthogonal to the main surface. When a specific direction orthogonal to the main surface is defined as the positive direction and the direction opposite to the positive direction is defined as the negative direction, the capacitor portion includes an aluminum oxide body having a plurality of holes extending from the outer surface on the positive direction side to the negative direction side, a first electrode layer laminated on the outer surface on the positive direction side of the aluminum oxide body and the inner surfaces of the plurality of holes, a dielectric layer laminated on the opposite side of the first electrode layer from the aluminum oxide body, and a second electrode layer laminated on the opposite side of the dielectric layer from the first electrode layer.

[0006] A method for manufacturing a semiconductor device to solve the above problems comprises: a wiring formation step of forming an intermediate body mainly composed of aluminum and an inductor wiring mainly composed of aluminum on the main surface of a base substrate; an anodizing step, performed after the wiring formation step, in which, when the direction from the base substrate toward the intermediate body is defined as the positive direction and the opposite direction as the negative direction among the directions perpendicular to the main surface, a part or all of the intermediate body is converted into an aluminum oxide body having a plurality of holes extending from the outer surface on the positive direction side to the negative direction by an anodizing method; a first electrode layer formation step, performed after the anodizing step, in which a first electrode layer is laminated on the outer surface on the positive direction side and on the inner surfaces of the plurality of holes of the aluminum oxide body; a dielectric layer formation step, performed after the first electrode layer formation step, in which a dielectric layer is laminated on the side of the first electrode layer opposite to the aluminum oxide body; and a second electrode layer formation step, performed after the dielectric layer formation step, in which a second electrode layer is laminated on the side of the dielectric layer opposite to the first electrode layer.

[0007] With the above configuration, it is possible to suppress the increase in the dimensions of the semiconductor device in the direction parallel to the main surface, which is caused by an increase in the capacitance value of the capacitor section.

[0008] Figure 1 is a cross-sectional view of a semiconductor device according to the first embodiment. Figure 2 is a cross-sectional view of the semiconductor device according to the first embodiment along the line 2-2 in Figure 1. Figure 3 is a flowchart showing a method for manufacturing the semiconductor device according to the first embodiment. Figure 4 is an explanatory diagram showing a method for manufacturing the semiconductor device according to the first embodiment. Figure 5 is an explanatory diagram showing a method for manufacturing the semiconductor device according to the first embodiment. Figure 6 is an explanatory diagram showing a method for manufacturing the semiconductor device according to the first embodiment. Figure 7 is an explanatory diagram showing a method for manufacturing the semiconductor device according to the first embodiment. Figure 8 is an explanatory diagram showing a method for manufacturing the semiconductor device according to the first embodiment. Figure 9 is an explanatory diagram showing a method for manufacturing the semiconductor device according to the first embodiment. Figure 10 is an explanatory diagram showing a method for manufacturing the semiconductor device according to the first embodiment. Figure 11 is an explanatory diagram showing a method for manufacturing the semiconductor device according to the first embodiment. Figure 12 is an explanatory diagram showing a method for manufacturing the semiconductor device according to the first embodiment. Figure 13 is a cross-sectional view of a semiconductor device according to the second embodiment. Figure 14 is a cross-sectional view of the semiconductor device according to the second embodiment along the line 14-14 in Figure 13. Figure 15 is a cross-sectional view of the semiconductor device according to the second embodiment along the line 15-15 in Figure 13. Figure 16 is a cross-sectional view of a semiconductor device according to the third embodiment. Figure 17 is a cross-sectional view of the semiconductor device according to the third embodiment, taken along line 17-17 in Figure 16. Figure 18 is a cross-sectional view of the semiconductor device according to the third embodiment, taken along line 18-18 in Figure 16.

[0009] <First Embodiment> <Outline Configuration of Semiconductor Device> Hereinafter, the first embodiment of the present disclosure will be described with reference to Figures 1 to 12. First, the outline configuration of the semiconductor device 100 will be described.

[0010] As shown in Figure 1, the semiconductor device 100 is generally rectangular in shape. The semiconductor device 100 comprises a base body 10, a capacitor section 30, and an inductor section 50. The semiconductor device 100 comprises a capacitor wiring layer 61, a first lead layer 71, a second lead layer 72, and a third lead layer 73. The semiconductor device 100 also comprises a first columnar wiring 81, a second columnar wiring 82, and a third columnar wiring 83.

[0011] The base body 10 is generally rectangular in shape. That is, the base body 10 has six planar outer surfaces. Of these six outer surfaces, one specific surface is designated as the first main surface 100A. The surface located opposite to the first main surface 100A and parallel to the first main surface 100A is designated as the second main surface 100B. Furthermore, the four outer surfaces perpendicular to the first main surface 100A, in other words, the outer surfaces excluding the first main surface 100A and the second main surface 100B, are designated as side surfaces 100C. The shapes of the first main surface 100A, the second main surface 100B, and the side surfaces 100C are all roughly rectangular.

[0012] Here, as shown in Figures 1 and 2, the axis parallel to the long side of the first main surface 100A is defined as the first axis X. The axis parallel to the short side of the first main surface 100A is defined as the second axis Y. The axis perpendicular to the first main surface 100A is defined as the third axis Z. In this embodiment, the first axis X, the second axis Y, and the third axis Z are orthogonal to each other.

[0013] Furthermore, a specific direction along the first axis X is designated as the first positive direction XA, and the direction opposite to the first positive direction XA is designated as the first negative direction XB. A specific direction along the second axis Y is designated as the second positive direction YA, and the direction opposite to the second positive direction YA is designated as the second negative direction YB. A specific direction along the third axis Z is designated as the third positive direction ZA, and the direction opposite to the third positive direction ZA is designated as the third negative direction ZB.

[0014] As shown in Figure 1, the base body 10 comprises a base body 11, a first protective film 16, and a second protective film 17. The base body 11 comprises a substrate 12, an insulator 13, and an insulating layer 14. The substrate 12, insulator 13, insulating layer 14, first protective film 16, and second protective film 17 are arranged in this order from the third negative direction ZB to the third positive direction ZA.

[0015] The insulator 13 and the insulating layer 14 house the capacitor section 30. In other words, the capacitor section 30 is located inside the base body 10. The insulator 13 houses the inductor section 50. In other words, the inductor section 50 is located inside the base body 10.

[0016] <Detailed Configuration of Semiconductor Device> Next, the detailed configuration of the semiconductor device 100 will be described. As shown in Figure 1, the substrate 12 is rectangular in shape. The substrate 12 extends on a plane parallel to the first main surface 100A. The material of the substrate 12 is silicon. The insulator 13 is in contact with the outer surface of the substrate 12 on the third positive direction ZA side. The shape of the insulator 13 is a rectangular parallelepiped. When the semiconductor device 100 is viewed through to the third positive direction ZA, the shape of the outer edge of the insulator 13 is the same as the shape of the outer edge of the substrate 12. The material of the insulator 13 is SiO ２ Therefore, the insulator 13 contains an inorganic compound. Note that "parallel" does not mean parallel in the strict sense, but rather allows for manufacturing tolerances, etc. For example, if the acute angle between the substrate 12 and the first main surface 100A is less than 5 degrees, it is considered parallel.

[0017] In the following description, the insulator 13 will be broadly classified into a first insulator 13A, a second insulator 13B, a third insulator 13C, and a fourth insulator 13D. Furthermore, it will be described assuming that the first insulator 13A, the second insulator 13B, the third insulator 13C, and the fourth insulator 13D are stacked sequentially from the third negative direction ZB to the third positive direction ZA. In Figure 1, the boundaries of the first insulator 13A, the second insulator 13B, the third insulator 13C, and the fourth insulator 13D are virtually indicated by dashed lines.

[0018] The capacitor portion 30 is in contact with the outer surface of the first insulator 13A on the third positive direction ZA side. The capacitor portion 30 has a rectangular parallelepiped shape overall. The capacitor portion 30 comprises a barrier film 31, a wiring body 32, an aluminum oxide body 41, a first electrode layer 46, a second electrode layer 47, and a dielectric layer 48. The barrier film 31 is in contact with the outer surface of the first insulator 13A on the third positive direction ZA side. Therefore, in the third positive direction ZA, the barrier film 31 is located in the same layer as the second insulator 13B. The barrier film 31 has a rectangular plate shape. The barrier film 31 extends on a plane parallel to the first main surface 100A. The material of the barrier film 31 is a metal mainly composed of tungsten.

[0019] As shown in Figure 1, the aluminum oxide body 41 is in contact with the outer surface of the barrier film 31 on the third positive direction ZA side. Therefore, in the third positive direction ZA, the aluminum oxide body 41 is located in the same layer as the third insulator 13C. When the semiconductor device 100 is viewed through with the third positive direction ZA facing, the third insulator 13C of the insulator 13 covers the outer surface of the aluminum oxide body 41. The material of the aluminum oxide body 41 is almost entirely aluminum oxide, but it may contain impurities. The aluminum oxide body 41 has a lower electrical resistance than the third insulator 13C of the insulator 13. When the semiconductor device 100 is viewed through with the third positive direction ZA facing, the aluminum oxide body 41 is located in a portion of the region where the barrier film 31 exists, including one end of the first negative direction XB. The shape of the aluminum oxide body 41 is generally a rectangular parallelepiped.

[0020] As shown in Figure 2, the aluminum oxide body 41 has a plurality of holes 42. The holes 42 extend from the outer surface of the aluminum oxide body 41 on the third positive direction ZA side to the third negative direction ZB side. Specifically, when viewing the semiconductor device 100 through the aluminum oxide body 41 facing the third positive direction ZA, the holes 42 located near the center of the aluminum oxide body 41 extend generally parallel to the third axis Z. In this embodiment, these holes 42 extend from the outer surface of the aluminum oxide body 41 on the third positive direction ZA side to the outer surface on the third negative direction ZB side. That is, the holes 42 located near the center of the aluminum oxide body 41 penetrate the aluminum oxide body 41 along the third axis Z. Note that in each drawing, the inner diameter 42D of each hole 42 is exaggerated in the illustration. Also, an example of the actual inner diameter 42D of each hole 42 is about 0.08 μm. Although the opening edge of the hole 42 is shown as a perfect circle in each drawing, the actual opening edge of the hole 42 does not need to be a perfect circle.

[0021] Furthermore, when viewing the semiconductor device 100 through the third positive direction ZA, the holes 42 located on the outside of the aluminum oxide body 41 extend so as to be inclined with respect to the third axis Z. In this embodiment, these holes 42 extend from the outer surface of the aluminum oxide body 41 on the third positive direction ZA side to the side surface of the aluminum oxide body 41. Note that in Figure 2, the first electrode layer 46, the second electrode layer 47, and the dielectric layer 48, which will be described later, are not shown.

[0022] As shown in Figure 1, the fourth insulator 13D is in contact with the outer surface of the aluminum oxide body 41 on the third positive direction ZA side and the outer surface of the third insulator 13C on the third positive direction ZA side. When viewing the semiconductor device 100 through the third positive direction ZA, the fourth insulator 13D is not located near the center of the aluminum oxide body 41. That is, the central part of the outer surface of the aluminum oxide body 41 on the third positive direction ZA side is not covered by the fourth insulator 13D.

[0023] The first electrode layer 46 is in contact with the aluminum oxide body 41. Specifically, the first electrode layer 46 is laminated on the outer surface of the aluminum oxide body 41 on the third positive direction ZA side, on the inner surfaces of the plurality of holes 42, and on the outer surface of the fourth insulator 13D on the third positive direction ZA side. Note that the above-mentioned parts of the first electrode layer 46 are continuous; that is, the first electrode layer 46 is not separated. The first electrode layer 46 is also in contact with the barrier film 31 described above. In this embodiment, the first electrode layer 46 is laminated only on the inner surface of the hole 42 located near the center of the aluminum oxide body 41 when viewing the semiconductor device 100 with the third positive direction ZA facing through it. Here, among the hole 42, the one on which the first electrode layer 46 is laminated on the inner surface is called the first hole 42A, and the one on which the first electrode layer 46 is not laminated on the inner surface is called the second hole 42B. When the semiconductor device 100 is viewed through with the third positive direction ZA, the multiple second holes 42B are located outward relative to the multiple first holes 42A. In other words, when the semiconductor device 100 is viewed through with the third positive direction ZA, the multiple second holes 42B are located outward, surrounding the multiple first holes 42A.

[0024] Furthermore, when the semiconductor device 100 is viewed through with the third positive direction ZA facing upwards, the first electrode layer 46 is located in a region of the fourth insulator 13D that overlaps with the aluminum oxide body 41. An example of the material of the first electrode layer 46 is a metal mainly composed of aluminum.

[0025] The dielectric layer 48 is in contact with the first electrode layer 46. Specifically, the dielectric layer 48 is laminated over almost the entire area of ​​the first electrode layer 46 on the side opposite to the aluminum oxide body 41. An example of the material of the dielectric layer 48 is SiO ２ That is the case.

[0026] The second electrode layer 47 is in contact with the dielectric layer 48. Specifically, the second electrode layer 47 is laminated over almost the entire area of ​​the dielectric layer 48 on the side opposite to the first electrode layer 46. An example of the material of the second electrode layer 47 is a metal mainly composed of aluminum.

[0027] The wiring 32 is in contact with the outer surface of the barrier film 31 on the third positive direction ZA side. Therefore, in this embodiment, the barrier film 31 is a relay layer that electrically connects the first electrode layer 46 and the wiring 32. That is, the wiring 32 is electrically connected to the first electrode layer 46 via the barrier film 31. When the semiconductor device 100 is viewed through in the third positive direction ZA, the wiring 32 is located in a portion of the region where the barrier film 31 exists, including one end of the first positive direction XA. In the third positive direction ZA, the wiring 32 is located in the same layer as the aluminum oxide body 41. The outer surface of the wiring 32 on the first negative direction XB side is in contact with the outer surface of the aluminum oxide body 41 on the first positive direction XA side. The shape of the wiring 32 is generally a rectangular parallelepiped. The material of the wiring 32 is a metal mainly composed of aluminum.

[0028] As shown in Figure 1, the inductor section 50 is provided with inductor wiring 51. The inductor wiring 51 is in contact with the outer surface of the second insulator 13B on the third positive direction ZA side. Therefore, in the third positive direction ZA, the inductor wiring 51 is located in the same layer as the aluminum oxide body 41 of the capacitor section 30. In other words, in the third positive direction ZA, the inductor wiring 51 is located in the same layer as the third insulator 13C of the insulator 13. In this embodiment, when the semiconductor device 100 is viewed through to the third positive direction ZA, the third insulator 13C of the insulator 13 covers the outer surface of the inductor wiring 51. In other words, the main body 11 covers the capacitor section 30 and the inductor section 50.

[0029] As shown in Figure 2, the inductor wiring 51 extends parallel to the first main surface 100A, revolving around a pivot axis perpendicular to the first main surface 100A. The pivot axis of the inductor wiring 51 is parallel to the third axis Z. When viewing the semiconductor device 100 through the third negative direction ZB, the shape of the inductor wiring 51 is generally spiral-shaped. Specifically, when viewing the semiconductor device 100 through the third negative direction ZB, the inductor wiring 51 has a spiral shape in which the diameter decreases as it rotates clockwise. The material of the inductor wiring 51 is a metal mainly composed of aluminum. In other words, the material of the inductor part 50 is a metal mainly composed of aluminum. As shown in Figure 1, the fourth insulator 13D is in contact with the outer surface of the inductor wiring 51 on the third positive direction ZA side. Note that "orthogonal" does not mean orthogonal in a strict sense, but rather allows for manufacturing errors, etc. For example, if the angle between the pivot axis of the inductor wiring 51 and the first main surface 100A is less than 90 degrees ± 5 degrees, they are considered to be orthogonal.

[0030] As shown in Figure 2, when the semiconductor device 100 is viewed through in the third negative direction ZB, the inductor wiring 51 does not overlap with the capacitor section 30. Furthermore, the minimum width dimension 51W of the inductor wiring 51 is 100 times or more the inner diameter 42D of the hole 42 in the capacitor section 30. An example of the minimum width dimension 51W of the inductor wiring 51 is approximately 10 μm. Here, the minimum width dimension 51W of the inductor wiring 51 is the shortest distance from one edge to the other of the inductor wiring 51 in a direction perpendicular to the direction in which the inductor wiring 51 extends, when the semiconductor device 100 is viewed through in the third negative direction ZB. Furthermore, the inner diameter 42D of the hole 42 is the diameter of a perfect circle with the same area as the opening area on the outer surface of the aluminum oxide body 41 on the third positive direction ZA side.

[0031] In the following, the inner end of the inductor wiring 51 is referred to as the first end 51A, and the outer end of the inductor wiring 51 is referred to as the second end 51B.

[0032] As shown in Figure 1, the capacitor wiring layer 61 is in contact with the outer surface of the second electrode layer 47 of the capacitor section 30 on the third positive direction ZA side. That is, the capacitor wiring layer 61 is electrically connected to the second electrode layer 47 of the capacitor section 30. When the semiconductor device 100 is viewed through with the third positive direction ZA, the capacitor wiring layer 61 is located near the center of the aluminum oxide body 41 in the region where the second electrode layer 47 exists. The material of the capacitor wiring layer 61 is a metal mainly composed of aluminum.

[0033] The insulating layer 14 is in contact with a portion of the outer surface of the capacitor wiring layer 61 on the third positive direction ZA side, the outer surface of the second electrode layer 47 on the third positive direction ZA side, and the outer surface of the fourth insulator 13D on the third positive direction ZA side. When the semiconductor device 100 is viewed through with the third positive direction ZA facing the semiconductor device 100, the shape of the outer edge of the insulating layer 14 is the same as the shape of the outer edge of the fourth insulator 13D. The material of the insulating layer 14 is SiO ２ That is the case.

[0034] The first lead layer 71 is in contact with the outer surface of the capacitor wiring layer 61 on the third positive direction ZA side and the outer surface of the insulating layer 14 on the third positive direction ZA side. In other words, the first lead layer 71 is electrically connected to the capacitor wiring layer 61. The first lead layer 71 extends in the first negative direction XB side with respect to the contact portion between the first lead layer 71 and the capacitor wiring layer 61. The material of the first lead layer 71 is a metal mainly composed of aluminum.

[0035] The second lead layer 72 is in contact with the outer surface on the third positive direction ZA side of the wiring body 32 of the capacitor section 30, the outer surface on the third positive direction ZA side of the second end 51B of the inductor wiring 51 of the inductor section 50, and the outer surface on the third positive direction ZA side of the insulating layer 14. In other words, the second lead layer 72 is electrically connected to the wiring body 32 of the capacitor section 30. The second lead layer 72 is also electrically connected to the second end 51B of the inductor wiring 51. The material of the second lead layer 72 is a metal mainly composed of aluminum.

[0036] The third lead layer 73 is in contact with the outer surface on the third positive direction ZA side of the first end 51A of the inductor wiring 51 of the inductor section 50, and with the outer surface on the third positive direction ZA side of the insulating layer 14. In other words, the third lead layer 73 is electrically connected to the first end 51A of the inductor wiring 51. The material of the third lead layer 73 is a metal mainly composed of aluminum.

[0037] As shown in Figure 1, the first protective film 16 is in contact with the outer surface of the first extraction layer 71 on the third positive direction ZA side, the outer surface of the second extraction layer 72 on the third positive direction ZA side, and the outer surface of the third extraction layer 73 on the third positive direction ZA side. When the semiconductor device 100 is viewed through with the third positive direction ZA facing the semiconductor device, the shape of the outer edge of the first protective film 16 is the same as the shape of the outer edge of the insulating layer 14. The material of the first protective film 16 is SiN. The first protective film 16 is isolated so that it does not directly contact the first extraction layer 71, the second extraction layer 72, and the third extraction layer 73.

[0038] The second protective film 17 is in contact with the outer surface of the first protective film 16 on the third positive direction ZA side. In other words, the second protective film 17 is formed on the third positive direction ZA side with respect to the main body 11. When the semiconductor device 100 is viewed through with the third positive direction ZA facing it, the second protective film 17 is located in a place that overlaps with the capacitor portion 30 and the inductor portion 50. Also, when the semiconductor device 100 is viewed through with the third positive direction ZA facing it, the outer edge of the second protective film 17 is located inward relative to the outer edge of the first protective film 16. That is, when the semiconductor device 100 is viewed through with the third positive direction ZA facing it, the outer edge of the second protective film 17 is located inward relative to the outer edge of the main body 11. The material of the second protective film 17 is polyimide. In other words, the second protective film 17 is made of an organic insulating material. In this embodiment, the second protective film 17 is made of an organic insulating material and is formed on the third positive direction ZA side with respect to the base body 11.

[0039] As shown in Figure 1, the first columnar wiring 81 is in contact with the outer surface of the first lead layer 71 on the third positive direction ZA side. That is, the first columnar wiring 81 is electrically connected to the first lead layer 71. The first columnar wiring 81 extends from the first lead layer 71 toward the third positive direction ZA. A portion of the first columnar wiring 81, including the end toward the third positive direction ZA, protrudes from the outer surface of the second protective film 17 on the third positive direction ZA side. The material of the first columnar wiring 81 is a metal mainly composed of copper.

[0040] The second columnar wiring 82 is in contact with the outer surface of the second lead layer 72 on the third positive direction ZA side. That is, the second columnar wiring 82 is electrically connected to the second lead layer 72. The second columnar wiring 82 extends from the second lead layer 72 toward the third positive direction ZA. A portion of the second columnar wiring 82, including the end toward the third positive direction ZA, protrudes from the outer surface of the second protective film 17 on the third positive direction ZA side. The material of the second columnar wiring 82 is a metal mainly composed of copper.

[0041] The third columnar wiring 83 is in contact with the outer surface on the third positive direction ZA side in the third extraction layer 73. That is, the third columnar wiring 83 is electrically connected to the third extraction layer 73. The third columnar wiring 83 extends from the second extraction layer 72 toward the third positive direction ZA. A part including the end in the third positive direction ZA of the third columnar wiring 83 protrudes from the outer surface on the third positive direction ZA side of the second protective film 17. The material of the third columnar wiring 83 is a metal mainly composed of copper.

[0042] <Manufacturing method> Next, a manufacturing method of the semiconductor device 100 will be described with reference to FIGS. 3 to 12. Hereinafter, as an example, a manufacturing method executed by an operator or the like will be described. In the following, not only when an operator operates a manufacturing apparatus, but also a process automatically executed by the manufacturing apparatus based on the operator's settings will be expressed as being executed by an operator or the like for convenience.

[0043] As shown in FIG. 3, first, an operator or the like executes a base preparation step S11. Specifically, as shown in FIG. 4, an operator or the like prepares a plate-shaped base substrate 12Z. The dimensions of the main surface 12ZA of the base substrate 12Z are such that a plurality of semiconductor devices 100 can be formed. Here, the material of the base substrate 12Z is the same as the material of the substrate 12. Also, a part of the base substrate 12Z constitutes the substrate 12.

[0044] Hereinafter, an axis orthogonal to the main surface 12ZA of the base substrate 12Z is defined as the third axis Z. Further, among the directions parallel to the third axis Z, the direction in which the main surface 12ZA faces is defined as the third positive direction ZA, and the direction opposite to the third positive direction ZA is defined as the third negative direction ZB. Note that the third positive direction ZA during the manufacture of the semiconductor device 100 corresponds to the third positive direction ZA in the manufactured semiconductor device 100.

[0045] As shown in FIG. 3, next, an operator or the like executes an insulator forming step S12. Specifically, as shown in FIG. 4, an operator or the like forms an intermediate insulator 13AZ on the main surface 12ZA of the base substrate 12Z, that is, on the outer surface of the base substrate 12Z on the +Z direction ZA side of the third. An example of the method by which an operator or the like forms the intermediate insulator 13AZ is a sputtering method or a CVD method. "CVD" is an abbreviation of Chemical Vapor Deposition. The "CVD method" is also referred to as a chemical vapor deposition method. Here, the material of the intermediate insulator 13AZ is the same as the material of the insulator 13. Also, a part of the intermediate insulator 13AZ constitutes the first insulator 13A.

[0046] As shown in FIG. 3, next, an operator or the like executes a barrier film forming step S13. Specifically, as shown in FIG. 4, an operator or the like forms an intermediate barrier film 31Z on the outer surface of the intermediate insulator 13AZ on the +Z direction ZA side of the third. An example of the method by which an operator or the like forms the intermediate barrier film 31Z is a sputtering method or a CVD method. Here, the material of the intermediate barrier film 31Z is the same as the material of the barrier film 31. Also, a part of the intermediate barrier film 31Z constitutes the barrier film 31.

[0047] As shown in FIG. 3, next, an operator or the like executes a mask forming step S14. Specifically, as shown in FIG. 4, an operator or the like forms a mask 101 on the outer surface of the intermediate barrier film 31Z on the +Z direction ZA side of the third. At this time, when the semiconductor device 100 is seen through in the +Z direction ZA, the mask 101 is located only in the part of the intermediate barrier film 31Z that constitutes the barrier film 31. An example of the method by which an operator or the like forms the mask 101 is a method in which the mask 101 is formed by a vapor deposition method or the like and then patterned by an etching method. Hereinafter, it is simply referred to as a patterning method.

[0048] As shown in Figure 3, the worker then performs the removal process S15. Specifically, the worker removes the portions of the intermediate insulator 13AZ and the intermediate barrier film 31Z that do not overlap with the mask 101 when viewing the semiconductor device 100 through the third positive direction ZA. One example of a method by which the worker removes the intermediate insulator 13AZ, etc., is the patterning method. As a result, the barrier film 31 is formed. Furthermore, the worker removes the mask 101 from the outer surface of the barrier film 31 on the third positive direction ZA side.

[0049] As shown in Figure 3, the worker then performs the insulator formation process S16. Specifically, as shown in Figure 5, the worker forms an intermediate insulator 13BZ on the outer surface of the base substrate 12Z on the third positive direction ZA side and on the outer surface of the barrier film 31 on the third positive direction ZA side. One example of a method by which the worker forms the intermediate insulator 13BZ is the CVD method. Here, the material of the intermediate insulator 13BZ is the same as the material of the insulator 13. Furthermore, a portion of the intermediate insulator 13BZ constitutes a portion of the first insulator 13A, the second insulator 13B, and the third insulator 13C.

[0050] As shown in Figure 3, the worker then performs the resist formation process S17. Specifically, as shown in Figure 5, the worker forms the resist 102 on the outer surface of the intermediate insulator 13BZ on the third positive direction ZA side. At this time, when the semiconductor device 100 is viewed through to the third positive direction ZA, the resist 102 is located only in the portion of the intermediate insulator 13BZ that constitutes the third insulator 13C. One example of a method by which the worker forms the resist 102 is photolithography.

[0051] As shown in Figure 3, the worker then performs the dry etching process S18. Specifically, as shown in Figure 5, the worker removes the portion of the intermediate insulator 13BZ that does not overlap with the resist 102 when viewing the semiconductor device 100 through the third positive direction ZA. As a result, a space is formed in which the wiring 32, aluminum oxide 41, and inductor wiring 51 are located.

[0052] As shown in Figure 3, the worker then performs the removal process S19. Specifically, the worker removes the resist 102 from the outer surface of the intermediate insulator 13BZ on the third positive direction ZA side.

[0053] As shown in Figure 3, the worker then performs the wiring formation process S31. Specifically, as shown in Figure 6, the worker forms an intermediate body 41Z on the outer surface of the barrier film 31 on the third positive direction ZA side. In other words, in this embodiment, the worker forms the intermediate body 41Z on the main surface 12ZA of the base substrate 12Z via the first insulator 13A and the barrier film 31. The worker also forms the inductor wiring 51 on the outer surface of the second insulator 13B on the third positive direction ZA side. In other words, in this embodiment, the worker forms the inductor wiring 51 on the main surface 12ZA of the base substrate 12Z via the first insulator 13A and the second insulator 13B. One example of a method by which the worker forms the intermediate body 41Z and the inductor wiring 51 is the CVD method. As mentioned above, the "CVD method" is also called chemical vapor deposition. Here, the material of the intermediate 41Z is a metal mainly composed of aluminum. The intermediate 41Z constitutes the wiring body 32 and the aluminum oxide body 41.

[0054] As shown in Figure 3, the worker then performs the flattening process S32. Specifically, the worker flattens the outer surface of the intermediate body 41Z on the third positive direction ZA side, the outer surface of the inductor wiring 51 on the third positive direction ZA side, and the outer surface of the intermediate insulator 13BZ on the third positive direction ZA side. One example of a method used by the worker to flatten the surfaces is CMP. "CMP" is an abbreviation for Chemical Mechanical Polishing. "CMP" is also called chemical mechanical polishing.

[0055] As shown in Figure 3, the worker then performs the seed layer formation process S33. Specifically, as shown in Figure 6, the worker forms a seed layer 103 on the outer surface of the intermediate body 41Z on the third positive direction ZA side, the outer surface of the inductor wiring 51 on the third positive direction ZA side, and the outer surface of the intermediate insulator 13BZ on the third positive direction ZA side. At this time, when the semiconductor device 100 is viewed through with the third positive direction ZA facing the semiconductor device 100, the seed layer 103 is open in the portion of the intermediate body 41Z that constitutes the aluminum oxide body 41. One example of a method by which the worker forms the seed layer 103 is sputtering.

[0056] As shown in Figure 3, the worker then performs the mask formation process S34. Specifically, as shown in Figure 6, the worker forms a mask 104 on the outer surface of the seed layer 103 on the third positive direction ZA side. One example of a method by which the worker forms the mask 104 is the sputtering method or the CVD method.

[0057] As shown in Figure 3, the worker then performs the anodic oxidation process S35. Specifically, as shown in Figure 7, the worker uses the anodic oxidation method to convert a portion of the intermediate 41Z into an aluminum oxide body 41 having multiple pores 42 extending from the outer surface on the third positive direction ZA side to the third negative direction ZB side. Here, the anodic oxidation method is a processing method that forms an oxide film on the surface of the intermediate 41Z by passing an electric current through the intermediate 41Z, which is the target object, with the intermediate 41Z as the anode in an electrolytic solution. Then, the pores 42 are formed in the above process. In this anodic oxidation process S35, only the portion of the intermediate 41Z that is in contact with the electrolytic solution is oxidized to become an aluminum oxide body 41. As a result, a portion of the intermediate 41Z is formed as an aluminum oxide body 41. The remaining portion of the intermediate 41Z is formed as a wiring body 32. The anodic oxidation method is sometimes referred to as an anodic oxidation treatment.

[0058] As shown in Figure 3, the worker then performs the removal process S36. Specifically, the worker removes the seed layer 103 and mask 104 from the outer surface of the wiring body 32 on the third positive direction ZA side, the outer surface of the aluminum oxide body 41 on the third positive direction ZA side, the outer surface of the inductor wiring 51 on the third positive direction ZA side, and the outer surface of the intermediate insulator 13BZ on the third positive direction ZA side.

[0059] As shown in Figure 3, the worker then performs the insulator formation process S37. Specifically, as shown in Figure 7, the worker forms the intermediate insulator 13DZ on the outer surface of the wiring body 32 on the third positive direction ZA side, the outer surface of the aluminum oxide body 41 on the third positive direction ZA side, the outer surface of the inductor wiring 51 on the third positive direction ZA side, and the outer surface of the intermediate insulator 13BZ on the third positive direction ZA side. At this time, the intermediate insulator 13DZ is not located in the part of the aluminum oxide body 41 that is near the center when viewing the semiconductor device 100 through it with the third positive direction ZA facing it. One example of a method for forming the intermediate insulator 13DZ is the CVD method. Here, the material of the intermediate insulator 13DZ is the same as the material of the insulator 13. Also, a part of the intermediate insulator 13DZ constitutes the fourth insulator 13D.

[0060] As shown in Figure 3, the worker then performs the first electrode layer formation step S38. Specifically, as shown in Figure 8, the worker deposits the intermediate first electrode layer 46Z onto the outer surface of the aluminum oxide body 41 on the third positive direction ZA side, the inner surfaces of the multiple holes 42, and the outer surface of the intermediate insulator 13DZ on the third positive direction ZA side. One example of a method by which the worker deposits the intermediate first electrode layer 46Z is the ALD method. "ALD" is an abbreviation for Atomic Layer Deposition. The "ALD method" is also called atomic layer deposition. Here, the material of the intermediate first electrode layer 46Z is the same as the material of the first electrode layer 46. A portion of the intermediate first electrode layer 46Z constitutes the first electrode layer 46.

[0061] As shown in Figure 3, the worker then performs the dielectric layer formation process S39. Specifically, as shown in Figure 8, the worker laminates the intermediate dielectric layer 48Z on the outer surface of the intermediate first electrode layer 46Z on the third positive direction ZA side. In other words, the worker laminates the intermediate dielectric layer 48Z on the outer surface of the intermediate first electrode layer 46Z opposite to the aluminum oxide body 41. One example of a method by which the worker laminates the intermediate dielectric layer 48Z is the ALD method. Here, the material of the intermediate dielectric layer 48Z is the same as the material of the dielectric layer 48. A portion of the intermediate dielectric layer 48Z constitutes the dielectric layer 48.

[0062] As shown in Figure 3, the worker then performs the second electrode layer formation step S40. Specifically, as shown in Figure 8, the worker laminates the intermediate second electrode layer 47Z on the outer surface of the intermediate dielectric layer 48Z on the third positive direction ZA side. In other words, the worker laminates the intermediate second electrode layer 47Z on the outer surface of the intermediate dielectric layer 48Z opposite to the intermediate first electrode layer 46Z. One example of a method by which the worker laminates the intermediate second electrode layer 47Z is the ALD method. Here, the material of the intermediate second electrode layer 47Z is the same as the material of the second electrode layer 47. A portion of the intermediate second electrode layer 47Z constitutes the second electrode layer 47.

[0063] As shown in Figure 3, the worker then performs the wiring layer formation process S51. Specifically, as shown in Figure 9, the worker forms a capacitor wiring layer 61 on the outer surface of the intermediate second electrode layer 47Z on the third positive direction ZA side. One example of a method by which the worker forms the capacitor wiring layer 61 is the CVD method.

[0064] As shown in Figure 3, the worker then performs the removal process S52. Specifically, as shown in Figure 9, the worker removes a portion of the intermediate first electrode layer 46Z, intermediate dielectric layer 48Z, and intermediate second electrode layer 47Z on the outer surface of the intermediate insulator 13DZ on the third positive direction ZA side. At this time, the worker removes the portions of the intermediate first electrode layer 46Z, intermediate dielectric layer 48Z, and intermediate second electrode layer 47Z other than those that constitute the first electrode layer 46, dielectric layer 48, and second electrode layer 47. As a result, the first electrode layer 46, dielectric layer 48, and second electrode layer 47 are formed. One example of a method by which the worker removes the intermediate first electrode layer 46Z, etc., is the patterning method.

[0065] As shown in Figure 3, the worker then performs the insulating layer formation process S53. Specifically, as shown in Figure 9, the worker forms an intermediate insulating layer 14Z on the outer surface of the capacitor wiring layer 61 on the third positive direction ZA side, the outer surface of the second electrode layer 47 on the third positive direction ZA side, and the outer surface of the intermediate insulator 13DZ on the third positive direction ZA side. Here, the material of the intermediate insulating layer 14Z is the same as the material of the insulating layer 14. A portion of the intermediate insulating layer 14Z constitutes the insulating layer 14. One example of a method by which the worker forms the intermediate insulating layer 14Z is the CVD method.

[0066] As shown in Figure 3, the worker then performs the removal process S54. Specifically, as shown in Figure 9, the worker removes the portions of the intermediate insulator 13DZ and intermediate insulating layer 14Z in which the first lead layer 71, the second lead layer 72, and the third lead layer 73 are located. One example of a method by which the worker removes the intermediate insulator 13DZ, etc., is the patterning method.

[0067] As shown in Figure 3, the worker then performs the lead layer formation process S55. Specifically, as shown in Figure 10, the worker forms the first lead layer 71 on the outer surface of the capacitor wiring layer 61 on the third positive direction ZA side and on the outer surface of the intermediate insulating layer 14Z on the third positive direction ZA side. The worker also forms the second lead layer 72 on the outer surface of the wiring body 32 of the capacitor section 30 on the third positive direction ZA side, on the outer surface of the second end 51B of the inductor wiring 51 of the inductor section 50 on the third positive direction ZA side, and on the outer surface of the intermediate insulating layer 14Z on the third positive direction ZA side. The worker then forms the third lead layer 73 on the outer surface of the first end 51A of the inductor wiring 51 of the inductor section 50 on the third positive direction ZA side and on the outer surface of the intermediate insulating layer 14Z on the third positive direction ZA side. One example of a method by which the worker forms the first lead layer 71, etc., is the CVD method.

[0068] As shown in Figure 3, the worker then performs the first protective film formation step S56. Specifically, as shown in Figure 10, the worker forms the first protective film 16 on the outer surface of the first draw layer 71 on the third positive direction ZA side, the outer surface of the second draw layer 72 on the third positive direction ZA side, and the outer surface of the third draw layer 73 on the third positive direction ZA side. One example of a method by which the worker forms the first protective film 16 is the CVD method.

[0069] As shown in Figure 3, the worker then performs the second protective film formation step S57. Specifically, as shown in Figure 11, the worker forms the second protective film 17 on the outer surface of the first protective film 16 on the third positive direction ZA side. One example of a method by which the worker forms the second protective film 17 is photolithography.

[0070] As shown in Figure 3, the worker then performs the columnar wiring formation process S58. Specifically, as shown in Figure 11, the worker forms the first columnar wiring 81 on the outer surface of the first lead layer 71 on the third positive direction ZA side. The worker also forms the second columnar wiring 82 on the outer surface of the second lead layer 72 on the third positive direction ZA side. The worker also forms the third columnar wiring 83 on the outer surface of the third lead layer 73 on the third positive direction ZA side. One example of a method by which the worker forms the first columnar wiring 81, etc., is electroplating.

[0071] As shown in Figure 3, the next step is to perform the individualization process S59. Specifically, as shown in Figure 12, the worker uses a dicing blade to separate the multiple integrally molded semiconductor devices 100 into individual semiconductor devices 100. In Figure 12, the cross-section SL of the semiconductor device 100 is shown by a dashed line.

[0072] As shown in Figure 3, the worker then performs the thickness adjustment process S60. Specifically, the worker forms the substrate 12 by removing a portion of the base substrate 12Z, including the end face in the third negative direction ZB. As a result, the semiconductor device 100 is formed.

[0073] <Operation of this embodiment> As shown in Figure 1, the semiconductor device 100 comprises a base body 10, a capacitor section 30, and an inductor section 50. In the capacitor section 30, the first electrode layer 46, the dielectric layer 48, and the second electrode layer 47 are formed to follow the inner surface of the holes 42 of the aluminum oxide body 41. In other words, the first electrode layer 46, the dielectric layer 48, and the second electrode layer 47 overlap in a curved manner along the inner surface of the holes 42 of the aluminum oxide body 41. Therefore, for example, even if the size of the area of ​​the first electrode layer 46 etc. is the same when viewing the semiconductor device 100 with the third positive direction ZA facing through it, the area in which the first electrode layer 46 etc. actually overlaps is larger compared to the case where the first electrode layer 46 etc. is a flat layer.

[0074] <Effects of this embodiment> (1-1) According to this embodiment, even if the dimensions of the capacitor portion 30 in the direction parallel to the first main surface 100A are the same, for example, the capacitance value of the capacitor portion 30 will be larger compared to the case where the first electrode layer 46 etc. is a flat layer. As a result, it is possible to suppress the increase in the dimensions of the semiconductor device 100 in the direction parallel to the first main surface 100A due to the increase in the capacitance value of the capacitor portion 30.

[0075] (1-2) As shown in Figure 1, the inductor section 50 is provided with inductor wiring 51 that extends parallel to the first main surface 100A so as to revolve around a pivot axis perpendicular to the first main surface 100A. As shown in Figure 2, when the semiconductor device 100 is viewed through in the third negative direction ZB, the inductor wiring 51 does not overlap with the capacitor section 30. In other words, when the semiconductor device 100 is viewed through in the third positive direction ZA, the inductor wiring 51 does not overlap with the capacitor section 30. With the above configuration, for example, when the semiconductor device 100 is viewed through in the third positive direction ZA, the magnetic flux generated by the inductor wiring 51 is less likely to affect the capacitor section 30 compared to the case where the inductor wiring 51 overlaps with the capacitor section 30. As a result, changes in the characteristics of the first electrode layer 46, etc., due to the magnetic flux generated by the inductor wiring 51 can be suppressed.

[0076] (1-3) As shown in Figure 1, the inductor section 50 is provided with inductor wiring 51 extending parallel to the first main surface 100A. The minimum width dimension 51W of the inductor wiring 51 is 100 times or more the inner diameter 42D of the hole 42 of the capacitor section 30. With the above configuration, since the inner diameter 42D of the hole 42 is extremely small, it is possible to increase the number of holes 42. And, if the number of holes 42 is increased, it is easier to efficiently increase the capacitance value of the capacitor section 30. As a result, the increase in the size of the semiconductor device 100 in the direction parallel to the first main surface 100A due to the increase in the capacitance value of the capacitor section 30 can be further suppressed. Also, since the width dimension 51W of the inductor wiring 51 is relatively large, it is possible to suppress an increase in the DC resistance of the inductor wiring 51.

[0077] (1-4) As shown in Figure 1, the base body 10 comprises a base body main body 11. The base body main body 11 comprises an insulator 13 that has a higher electrical resistance than the aluminum oxide body 41. In the third positive direction ZA, the third insulator 13C of the insulator 13 is located in the same layer as the aluminum oxide body 41. When the semiconductor device 100 is viewed through in the third positive direction ZA, the third insulator 13C of the insulator 13 covers the outer surface of the aluminum oxide body 41. With the above configuration, for example, the dielectric strength of the capacitor portion 30 can be improved by the insulator 13 compared to the case where the aluminum oxide body 41 is exposed on the outer surface of the semiconductor device 100.

[0078] (1-5) As shown in Figure 1, the capacitor section 30 includes a barrier film 31 and a wiring body 32. In the third positive direction ZA, the wiring body 32 is located in the same layer as the aluminum oxide body 41. The material of the wiring body 32 is a metal mainly composed of aluminum. The barrier film 31 is formed to be in contact with the outer surface of the aluminum oxide body 41 on the third negative direction ZB side and the outer surface of the wiring body 32 on the third negative direction ZB side. The barrier film 31 functions as a relay layer that electrically connects the first electrode layer 46 and the wiring body 32. With the above configuration, the barrier film 31 and the wiring body 32 are electrically connected to the first electrode layer 46. Therefore, the barrier film 31 and the wiring body 32 can function as wiring for the first electrode layer 46.

[0079] (1-6) The barrier film 31 is made of a metal mainly composed of tungsten. In other words, the barrier film 31 is made of a different material from the first electrode layer 46 and the wiring 32. Therefore, even if the wiring 32 or the like is etched during the manufacturing process of the semiconductor device 100, the barrier film 31 can function as an etching stopper.

[0080] (1-7) In this embodiment, the material of the inductor section 50 is a metal mainly composed of aluminum. Therefore, the inductor section 50 can be manufactured from the same material as the capacitor section 30. This is expected to reduce the manufacturing cost of the semiconductor device 100.

[0081] (1-8) As shown in Figure 1, the base body 10 comprises a base body main body 11. The base body main body 11 comprises an insulator 13 containing an inorganic compound. In the third positive direction ZA, the third insulator 13C of the insulator 13 is located in the same layer as the inductor wiring 51 of the inductor section 50. When the semiconductor device 100 is viewed through in the third positive direction ZA, the third insulator 13C of the insulator 13 covers the outer surface of the inductor wiring 51 of the inductor section 50. With the above configuration, since the inductor section 50 is covered by the insulator 13 containing an inorganic compound, the insulation resistance of the inductor section 50 can be improved.

[0082] (1-9) As shown in Figure 1, among the holes 42, those in which the first electrode layer 46 is laminated on the inner surface are designated as first holes 42A, and those in which the first electrode layer 46 is not laminated on the inner surface are designated as second holes 42B. When the semiconductor device 100 is viewed through with the third positive direction ZA facing upward, the multiple second holes 42B are located outward relative to the multiple first holes 42A. With the above configuration, the porosity of the second holes 42B tends to be higher than that of the first holes 42A. Therefore, the area of ​​the aluminum oxide body 41 where the second holes 42B are located is more flexible than the area of ​​the aluminum oxide body 41 where the first holes 42A are located. As a result, the flexibility of the capacitor portion 30 can be improved compared to, for example, the case where the porosity of the second holes 42B is the same as that of the first holes 42A. Furthermore, compared to the case where, for example, the void ratio of the second hole 42B is the same as that of the first hole 42A, the warping of the semiconductor device 100 can be reduced.

[0083] (1-10) As shown in Figure 1, the base body 10 comprises a base body 11 and a second protective film 17. The base body 11 covers the capacitor portion 30 and the inductor portion 50. The second protective film 17 is formed on the third positive direction ZA side relative to the base body 11. The second protective film 17 is made of an organic insulating material. When the semiconductor device 100 is viewed through with the third positive direction ZA, the second protective film 17 is located in a place that overlaps with the capacitor portion 30 and the inductor portion 50. When the semiconductor device 100 is viewed through with the third positive direction ZA, the outer edge of the second protective film 17 is located inward relative to the outer edge of the base body 11. With the above configuration, the capacitor portion 30 and the inductor portion 50 are protected by the second protective film 17. Furthermore, since the outer edge of the second protective film 17 is located inward relative to the outer edge of the main body 11, as shown in Figure 12, in the individualization process S59 when manufacturing the semiconductor device 100, for example, the dicing blade used in the individualization process S59 is less likely to come into contact with the second protective film 17. Therefore, it is expected that wear of the dicing blade caused by contact with the second protective film 17 will be suppressed. In addition, the force applied to the second protective film 17 from the dicing blade is suppressed. Therefore, deformation of the semiconductor device 100 caused by force applied to the second protective film 17 from the dicing blade can be suppressed. Also, peeling of the second protective film 17 caused by force applied to the second protective film 17 from the dicing blade can be suppressed.

[0084] (1-11) As shown in Figure 3, the workers perform a wiring formation process S31 in the manufacture of the semiconductor device 100. Specifically, as shown in Figure 6, the workers form an intermediate body 41Z on the main surface 12ZA of the base substrate 12Z via a first insulator 13A and a barrier film 31. The workers also form an inductor wiring 51 on the main surface 12ZA of the base substrate 12Z via a first insulator 13A and a second insulator 13B. Furthermore, as shown in Figure 3, the workers perform an anodizing process S35. Specifically, as shown in Figure 7, the workers use an anodizing method to form an aluminum oxide body 41 having a plurality of holes 42 extending from the outer surface on the third positive direction ZA side to the third negative direction ZB side. Then, as shown in Figure 3, the workers perform a first electrode layer formation process S38. Specifically, as shown in Figure 8, the worker laminates the intermediate first electrode layer 46Z onto the outer surface of the aluminum oxide body 41 on the third positive direction ZA side, the inner surfaces of the multiple holes 42, and the outer surface of the intermediate insulator 13DZ on the third positive direction ZA side. Furthermore, as shown in Figure 3, the worker performs the dielectric layer formation process S39. Specifically, as shown in Figure 8, the worker laminates the intermediate dielectric layer 48Z onto the outer surface of the intermediate first electrode layer 46Z on the third positive direction ZA side. In other words, the worker laminates the intermediate dielectric layer 48Z onto the outer surface of the intermediate first electrode layer 46Z opposite to the aluminum oxide body 41. Then, as shown in Figure 3, the worker performs the second electrode layer formation process S40. Specifically, as shown in Figure 8, the worker laminates the intermediate second electrode layer 47Z onto the outer surface of the intermediate dielectric layer 48Z on the third positive direction ZA side. In other words, the worker laminates the intermediate second electrode layer 47Z onto the outer surface of the intermediate dielectric layer 48Z that is opposite to the intermediate first electrode layer 46Z.

[0085] With the above configuration, multiple holes 42 can be formed in a simple manner by using the anodic oxidation method. As a result, while manufacturing the semiconductor device 100 in a relatively simple manner, it is possible to suppress the increase in the dimensions of the semiconductor device 100 in the direction parallel to the first main surface 100A due to the increase in the capacitance value of the capacitor portion 30.

[0086] (1-12) In the wiring formation process S31, the workers form the intermediate 41Z and the inductor wiring 51 by the CVD method, i.e., by chemical vapor deposition. Then, in the first electrode layer formation process S38, the workers deposit the intermediate first electrode layer 46Z by the ALD method, i.e., by atomic layer deposition. Furthermore, in the dielectric layer formation process S39, the workers deposit the intermediate dielectric layer 48Z by the ALD method, i.e., by atomic layer deposition. Furthermore, in the second electrode layer formation process S40, the workers deposit the intermediate second electrode layer 47Z by the ALD method, i.e., by atomic layer deposition. With the above configuration, since the intermediate first electrode layer 46Z, intermediate dielectric layer 48Z, and intermediate second electrode layer 47Z are deposited by atomic layer deposition, homogeneous and thin first electrode layer 46, dielectric layer 48, and second electrode layer 47 can be formed more reliably.

[0087] <Second Embodiment> The second embodiment of the present disclosure will be described below with reference to Figures 13 to 15. In the second embodiment, some of the configurations differ from those of the first embodiment. Specifically, in the semiconductor device 200 of the second embodiment, some of the configurations of the element 10 are different. Also, in the semiconductor device 200 of the second embodiment, some of the configurations of the capacitor section 30 are different. In the semiconductor device 200 of the second embodiment, some of the configurations of the inductor section 50 are different. Furthermore, the semiconductor device 200 of the second embodiment does not have a first lead layer 71, a second lead layer 72, and a third lead layer 73. In the description of the second embodiment, the differences from the first embodiment will be the main focus, and components similar to those in the first embodiment will be denoted by the same reference numerals, and their descriptions will be omitted or simplified.

[0088] As shown in Figure 13, the base body 10 is provided with a protective film 216 instead of the first protective film 16 and the second protective film 17. The protective film 216 is in contact with the outer surface of the base body 11 on the third positive direction ZA side, the outer surface of the insulating layer 14 on the third positive direction ZA side, and the outer surface of the capacitor wiring layer 61 on the third positive direction ZA side. In other words, the protective film 216 is formed on the third positive direction ZA side with respect to the base body 11. When the semiconductor device 200 is viewed through with respect to the third positive direction ZA, the protective film 216 is located in a place that overlaps with the capacitor portion 30 and the inductor portion 50. Also, when the semiconductor device 200 is viewed through with respect to the third positive direction ZA, the outer edge of the protective film 216 is located inward relative to the outer edge of the base body 11. The material of the protective film 216 is polyimide. In other words, the protective film 216 is made of an organic insulating material.

[0089] As shown in Figure 13, the capacitor section 30 includes a barrier film 31, a wiring body 32, an aluminum oxide body 41, a first electrode layer 46, a second electrode layer 47, a dielectric layer 48, and a shield body 235. The shield body 235 is in contact with the outer surface of the barrier film 31 on the third positive direction ZA side. When the semiconductor device 200 is viewed through with the third positive direction ZA, the shield body 235 is located in a portion of the region where the barrier film 31 exists, including one end of the first negative direction XB. In the third positive direction ZA, the shield body 235 is located in the same layer as the aluminum oxide body 41. The outer surface of the shield body 235 on the first positive direction XA side is in contact with the outer surface of the aluminum oxide body 41 on the first negative direction XB side. In other words, when the semiconductor device 200 is viewed through with the third positive direction ZA, the shield body 235 covers the outer surface of the aluminum oxide body 41 on the first negative direction XB side. The shape of the shield body 235 is generally a rectangular parallelepiped. The material of the shield body 235 is a metal whose main component is aluminum.

[0090] As shown in Figure 13, the inductor section 50 includes a first inductor wiring 251, a second inductor wiring 252, and a connector 253 instead of the inductor wiring 51. The configuration of the first inductor wiring 251 is the same as that of the inductor wiring 51. That is, the main body 11 covers the first inductor wiring 251. Therefore, the main body 11 covers the capacitor section 30 and the first inductor wiring 251. The first inductor wiring 251 extends parallel to the first main surface 100A so as to revolve around a pivot axis perpendicular to the first main surface 100A. The pivot axis of the first inductor wiring 251 is parallel to the third axis Z. Also, as shown in Figure 14, when the semiconductor device 200 is viewed through in the third negative direction ZB, the first inductor wiring 251 has a spiral shape such that its diameter decreases as it revolves clockwise.

[0091] In the following, the inner end of the first inductor wiring 251 is referred to as the first end 251A, and the outer end of the first inductor wiring 251 is referred to as the second end 251B.

[0092] As shown in Figure 13, the second inductor wiring 252 is located inside the protective film 216. In other words, in the third positive direction ZA, the protective film 216 is located in the same layer as the second inductor wiring 252. Also, when viewing the semiconductor device 200 through the third positive direction ZA, the protective film 216 covers the outer surface of the second inductor wiring 252. Furthermore, the effective relative permeability of at least a portion of the protective film 216 is greater than 1. In addition, the second inductor wiring 252 is located in the third positive direction ZA relative to the first inductor wiring 251. Therefore, the second inductor wiring 252 is located in a different layer from the capacitor portion 30 in the direction perpendicular to the first main surface 100A. When viewing the semiconductor device 200 through the third positive direction ZA, the second inductor wiring 252 overlaps with the first inductor wiring 251.

[0093] As shown in Figure 13, the second inductor wiring 252 extends parallel to the first main surface 100A so as to pivot around a pivot axis perpendicular to the first main surface 100A. The pivot axis of the second inductor wiring 252 is parallel to the third axis Z. That is, the pivot axis of the second inductor wiring 252 is parallel to the pivot axis of the first inductor wiring 251. In this embodiment, the minimum dimension 252H of the second inductor wiring 252 in the direction perpendicular to the first main surface 100A is larger than the minimum dimension 251H of the first inductor wiring 251 in the direction perpendicular to the first main surface 100A. The material of the second inductor wiring 252 is a metal mainly composed of copper.

[0094] As shown in Figure 15, when the semiconductor device 200 is viewed through in the third negative direction ZB, the shape of the second inductor wiring 252 is generally spiral-shaped. Specifically, when the semiconductor device 200 is viewed through in the third negative direction ZB, the second inductor wiring 252 has a spiral shape in which the diameter increases as it rotates clockwise.

[0095] Here, the inner end of the second inductor wiring 252 is designated as the first end 252A, and the outer end of the second inductor wiring 252 is designated as the second end 252B.

[0096] When the semiconductor device 200 is viewed through to the third positive direction ZA, the first end 252A of the second inductor wiring 252 overlaps with the first end 251A of the first inductor wiring 251. As shown in Figure 13, the first end 252A of the second inductor wiring 252 is electrically connected to the first end 251A of the first inductor wiring 251 via a connector 253. The material of the connector 253 is a metal mainly composed of copper.

[0097] As shown in Figure 13, the semiconductor device 200 includes a first columnar wiring 281, a second columnar wiring 282, a third columnar wiring 283, and a fourth columnar wiring 284. The semiconductor device 200 also includes a first terminal 281T, a second terminal 282T, a third terminal 283T, and a fourth terminal 284T.

[0098] As shown in Figure 13, the first columnar wiring 281 is in contact with the outer surface of the capacitor wiring layer 61 on the third positive direction ZA side. The first columnar wiring 281 extends from the capacitor wiring layer 61 toward the third positive direction ZA. The outer surface of the first columnar wiring 281 on the third positive direction ZA side is exposed on the outer surface of the protective film 216 on the third positive direction ZA side. The material of the first columnar wiring 281 is a metal mainly composed of copper.

[0099] The second columnar wiring 282 is in contact with the outer surface of the wiring body 32 of the capacitor section 30 on the third positive direction ZA side. The second columnar wiring 282 extends from the wiring body 32 toward the third positive direction ZA. The outer surface of the second columnar wiring 282 on the third positive direction ZA side is exposed on the outer surface of the protective film 216 on the third positive direction ZA side. The material of the second columnar wiring 282 is a metal mainly composed of copper.

[0100] The third columnar wiring 283 is in contact with the outer surface on the third positive direction ZA side of the second end 251B of the first inductor wiring 251 of the inductor section 50. The third columnar wiring 283 extends from the first inductor wiring 251 toward the third positive direction ZA. The outer surface of the third columnar wiring 283 toward the third positive direction ZA side is exposed on the outer surface of the protective film 216 toward the third positive direction ZA side. The material of the third columnar wiring 283 is a metal mainly composed of copper.

[0101] The fourth columnar wiring 284 is in contact with the outer surface on the third positive direction ZA side of the second end 252B of the second inductor wiring 252 of the inductor section 50. The fourth columnar wiring 284 extends from the second inductor wiring 252 toward the third positive direction ZA. The outer surface of the fourth columnar wiring 284 toward the third positive direction ZA is exposed on the outer surface of the protective film 216 toward the third positive direction ZA. The material of the fourth columnar wiring 284 is a metal mainly composed of copper.

[0102] As shown in Figure 13, the first terminal 281T is in contact with the outer surface of the first columnar wiring 281 on the third positive direction ZA side, and with the outer surface of the protective film 216 on the third positive direction ZA side. In other words, the first terminal 281T is electrically connected to the first columnar wiring 281. The shape of the first terminal 281T is generally rectangular. The material of the first terminal 281T is a metal mainly composed of copper.

[0103] The second terminal 282T is in contact with the outer surface of the second columnar wiring 282 on the third positive direction ZA side, and with the outer surface of the protective film 216 on the third positive direction ZA side. In other words, the second terminal 282T is electrically connected to the second columnar wiring 282. The shape of the second terminal 282T is generally rectangular plate-like. The material of the second terminal 282T is a metal mainly composed of copper.

[0104] The third terminal 283T is in contact with the outer surface of the third columnar wiring 283 on the third positive direction ZA side, and with the outer surface of the protective film 216 on the third positive direction ZA side. In other words, the third terminal 283T is electrically connected to the third columnar wiring 283. The shape of the third terminal 283T is generally rectangular. The material of the third terminal 283T is a metal mainly composed of copper.

[0105] The fourth terminal 284T is in contact with the outer surface of the fourth columnar wiring 284 on the third positive direction ZA side, and with the outer surface of the protective film 216 on the third positive direction ZA side. In other words, the fourth terminal 284T is electrically connected to the fourth columnar wiring 284. The shape of the fourth terminal 284T is generally rectangular. The material of the fourth terminal 284T is a metal mainly composed of copper.

[0106] <Effects of this embodiment> In this embodiment, in addition to the effects of (1-1) to (1-12) described above, the following effects of (2-1) to (2-5) are achieved.

[0107] (2-1) As shown in Figure 13, the capacitor section 30 is equipped with a shielding body 235. In the third positive direction ZA, the shielding body 235 is located in the same layer as the aluminum oxide body 41. Furthermore, when the semiconductor device 200 is viewed through in the third positive direction ZA, the shielding body 235 covers the outer surface of the aluminum oxide body 41 on the first negative direction XB side. In addition, the material of the shielding body 235 is a metal mainly composed of aluminum. With the above configuration, the shielding body 235 functions as an electromagnetic shield. This makes it possible to suppress changes in the characteristics of the first electrode layer 46 of the capacitor section 30 due to electromagnetic waves.

[0108] (2-2) As shown in Figure 13, the inductor section 50 includes a first inductor wiring 251 and a second inductor wiring 252. The first inductor wiring 251 extends parallel to the first main surface 100A so as to revolve around a pivot axis perpendicular to the first main surface 100A. The second inductor wiring 252 also extends parallel to the first main surface 100A so as to revolve around a pivot axis perpendicular to the first main surface 100A. The first end 252A of the second inductor wiring 252 is electrically connected to the first end 251A of the first inductor wiring 251 via a connector 253. When the semiconductor device 200 is viewed through in the third positive direction ZA, the second inductor wiring 252 overlaps with the first inductor wiring 251. With the above configuration, for example, the inductance of the entire inductor section 50 can be increased compared to a case where the inductor section 50 does not have the second inductor wiring 252.

[0109] (2-3) As shown in Figure 13, the minimum dimension 252H of the second inductor wiring 252 in the direction perpendicular to the first main surface 100A is greater than the minimum dimension 251H of the first inductor wiring 251 in the direction perpendicular to the first main surface 100A. With the above configuration, for example, compared to the case where the minimum dimension 252H of the second inductor wiring 252 is the same as the minimum dimension 251H of the first inductor wiring 251, it is possible to suppress an increase in the DC resistance of the second inductor wiring 252.

[0110] (2-4) As shown in Figure 13, the base body 10 comprises a base body 11 and a protective film 216. The base body 11 covers the capacitor section 30 and the first inductor wiring 251. The protective film 216 is formed on the third positive direction ZA side relative to the base body 11. The protective film 216 is made of an organic insulating material. In the third positive direction ZA, the protective film 216 is located in the same layer as the second inductor wiring 252. When the semiconductor device 200 is viewed through to the third positive direction ZA, the protective film 216 covers the outer surface of the second inductor wiring 252. With the above configuration, since the protective film 216 is made of an organic insulating material, the protective film 216 is relatively soft. Furthermore, because the protective film 216 covers the second inductor wiring 252, the second inductor wiring 252 can be protected more reliably.

[0111] (2-5) The effective relative permeability of at least a portion of the protective film 216 is greater than 1. With the above configuration, magnetic noise can be removed by the protective film 216. Furthermore, an improvement in the inductance of the inductor section 50 can be expected.

[0112] <Third Embodiment> The third embodiment of the present disclosure will be described below with reference to Figures 16 to 18. In the third embodiment, some of the configurations differ from those of the second embodiment. Specifically, in the semiconductor device 300 of the third embodiment, some of the configurations of the inductor section 50 are different. In the description of the third embodiment, the differences from the second embodiment will be the main focus, and components similar to those in the second embodiment will be denoted by the same reference numerals, and their descriptions will be omitted or simplified.

[0113] As shown in Figure 16, the inductor section 50 is equipped with a first inductor wiring 351, a second inductor wiring 352, and a connector 353 instead of the first inductor wiring 251, the second inductor wiring 252, and the connector 253. The configuration of the first inductor wiring 351 is the same as that of the first inductor wiring 251. That is, the main body 11 covers the capacitor section 30 and the first inductor wiring 351. The first inductor wiring 351 extends parallel to the first main surface 100A so as to revolve around a pivot axis perpendicular to the first main surface 100A. The pivot axis of the first inductor wiring 351 is parallel to the third axis Z. Furthermore, as shown in Figure 17, when the semiconductor device 300 is viewed through in the third negative direction ZB, the first inductor wiring 351 has a spiral shape such that its diameter decreases as it revolves clockwise.

[0114] In the following, the inner end of the first inductor wiring 351 is referred to as the first end 351A, and the outer end of the first inductor wiring 351 is referred to as the second end 351B.

[0115] As shown in Figure 16, the second inductor wiring 352 is located inside the protective film 216. In other words, when viewing the semiconductor device 300 with the third positive direction ZA facing it, the protective film 216 covers the outer surface of the second inductor wiring 352. Furthermore, the effective relative permeability of at least a portion of the protective film 216 is greater than 1. Also, the second inductor wiring 352 is located in the third positive direction ZA relative to the first inductor wiring 351. Therefore, the second inductor wiring 352 is located in a different layer from the capacitor portion 30 in the direction perpendicular to the first main surface 100A. Furthermore, when viewing the semiconductor device 300 with the third positive direction ZA facing it, the second inductor wiring 352 overlaps with the first inductor wiring 351 and the capacitor portion 30.

[0116] As shown in Figure 16, the second inductor wiring 352 extends parallel to the first main surface 100A so as to pivot around a pivot axis perpendicular to the first main surface 100A. The pivot axis of the second inductor wiring 352 is parallel to the third axis Z. That is, the pivot axis of the second inductor wiring 352 is parallel to the pivot axis of the first inductor wiring 351. In this embodiment, the minimum dimension 352H of the second inductor wiring 352 in the direction perpendicular to the first main surface 100A is larger than the minimum dimension 351H of the first inductor wiring 351 in the direction perpendicular to the first main surface 100A. The material of the second inductor wiring 352 is a metal mainly composed of copper.

[0117] As shown in Figure 18, when the semiconductor device 300 is viewed through in the third negative direction ZB, the shape of the second inductor wiring 352 is generally spiral-shaped. Specifically, when the semiconductor device 300 is viewed through in the third negative direction ZB, the second inductor wiring 352 has a spiral shape in which the diameter increases as it rotates clockwise. Furthermore, when the semiconductor device 300 is viewed through in the third negative direction ZB, the size of the second inductor wiring 352 is larger than the size of the first inductor wiring 351. Here, as shown by the dashed line in Figure 17, when the semiconductor device 300 is viewed through in the third negative direction ZB, the area of ​​the smallest rectangle surrounding the first inductor wiring 351 is defined as the first area 351D. Also, as shown by the dashed line in Figure 18, when the semiconductor device 300 is viewed through in the third negative direction ZB, the area of ​​the smallest rectangle surrounding the second inductor wiring 352 is defined as the second area 352D. In this case, the second area 352D is larger than the first area 351D.

[0118] In the following, the inner end of the second inductor wiring 352 is referred to as the first end 352A, and the outer end of the second inductor wiring 352 is referred to as the second end 352B.

[0119] When the semiconductor device 300 is viewed through to the third positive direction ZA, the first end 352A of the second inductor wiring 352 overlaps with the first end 351A of the first inductor wiring 351. As shown in Figure 16, the first end 352A of the second inductor wiring 352 is electrically connected to the first end 351A of the first inductor wiring 351 via a connector 353. The material of the connector 253 is a metal mainly composed of copper.

[0120] <Effects of this embodiment> In this embodiment, in addition to the effects of (1-1) to (1-12) and (2-1) to (2-5) described above, the following effect (3-1) is achieved.

[0121] (3-1) As shown in Figure 16, the second inductor wiring 352 is located in a different layer from the capacitor section 30 in a direction perpendicular to the first main surface 100A. The second area 352D is larger than the first area 351D. With the above configuration, for example, the inductance of the second inductor wiring 352 can be increased compared to the case where the second area 352D is the same as the first area 351D.

[0122] <Examples of Modifications> This embodiment can be implemented with the following modifications. This embodiment and the following examples of modifications can be combined with each other to the extent that they do not contradict each other technically.

[0123] - In the first embodiment described above, the configuration of the base body 10 may be changed. For example, when the semiconductor device 100 is viewed through with the third positive direction ZA facing the outside, the insulator 13 does not have to cover the outer surface of the aluminum oxide body 41. In other words, the outer surface of the aluminum oxide body 41 may be exposed on the outer surface of the insulator 13. As a specific example, if there is little need to improve the dielectric strength of the capacitor portion 30, the above configuration may be adopted.

[0124] For example, the insulator 13 does not need to contain an inorganic compound. Specifically, if the dielectric strength of the inductor section 50 is sufficiently high, the effect of adopting the above configuration will be small.

[0125] For example, when viewing the semiconductor device 100 with the third positive direction ZA facing through it, the multiple second holes 42B do not necessarily have to be located outside the multiple first holes 42A. Specifically, if there is little need to improve the flexibility of the capacitor portion 30, the above configuration may be adopted.

[0126] For example, the shape of the hole 42 may be changed. Specifically, if the first electrode layer 46 and the barrier film 31 are electrically connected, the hole 42 does not need to penetrate the aluminum oxide body 41.

[0127] For example, when viewing the semiconductor device 100 with the third positive direction ZA facing through it, the outer edge of the second protective film 17 may be located at the same position as the outer edge of the base body 11. Specifically, if the wear of the dicing blade used in the individualization process S59 is small, the above configuration may be adopted.

[0128] - In the first embodiment described above, the configuration of the capacitor section 30 may be changed. For example, the ends of the first electrode layer 46, the second electrode layer 47, and the dielectric layer 48 in the first positive direction XA may extend to the vicinity of the inductor section 50. In the above configuration, when the semiconductor device 100 is viewed through in the third positive direction ZA, the inductor wiring 51 may overlap with the first electrode layer 46, etc., of the capacitor section 30. As a specific example, the above configuration may be adopted if it is acceptable to allow for the possibility that the characteristics of the first electrode layer 46, etc., may change due to the magnetic flux generated in the inductor wiring 51.

[0129] For example, the material of the barrier film 31 can be changed. That is, the material of the barrier film 31 is not limited to a metal mainly composed of tungsten, but may be other materials. Even in this case, it is preferable that the material of the barrier film 31 is different from that of the first electrode layer 46 and the wiring body 32.

[0130] For example, the capacitor section 30 does not necessarily have to include the barrier film 31 and the wiring body 32. Specifically, if other components function as wiring for the first electrode layer 46, the above configuration may be adopted.

[0131] In the first embodiment described above, the configuration of the inductor section 50 may be changed. For example, the positional relationship between the capacitor section 30 and the inductor section 50 may be changed. Specifically, if a part or all of the inductor section 50 is located on the same level as the capacitor section 30 in a direction perpendicular to the first main surface 100A, the position of the inductor section 50 may be changed in a direction perpendicular to the first main surface 100A.

[0132] For example, the inductor section 50 does not have to extend so as to rotate around a pivot axis perpendicular to the first main surface 100A. That is, the pivot axis of the inductor wiring 51 may be inclined with respect to the third axis Z. In this case, when the semiconductor device 100 is viewed through in a direction parallel to the pivot axis of the inductor wiring 51, the inductor wiring 51 may overlap with the capacitor section 30. As a specific example, if it is acceptable to tolerate the possibility that the characteristics of the first electrode layer 46, etc., may change due to the magnetic flux generated in the inductor wiring 51, then the above configuration may be adopted.

[0133] For example, the minimum width dimension 51W of the inductor wiring 51 may be less than 100 times the inner diameter 42D of the hole 42 of the capacitor section 30. Specifically, if the DC resistance of the inductor wiring 51 is sufficiently small, the above configuration may be adopted.

[0134] For example, the material of the inductor section 50 may be changed. Specifically, the material of the inductor section 50 may be a metal mainly composed of copper. In other words, the inductor section 50 may be made of a different material from the capacitor section 30. Specifically, if the manufacturing cost of the semiconductor device 100 is sufficiently low, the above configuration may be adopted.

[0135] - In the first embodiment described above, the method for manufacturing the semiconductor device 100 may be changed. For example, in the wiring formation step S31, the worker may form the intermediate body 41Z and the inductor wiring 51 by a method other than the CVD method. Also, for example, in the first electrode layer formation step S38, the worker may laminate the intermediate first electrode layer 46Z by a method other than the ALD method. Similarly, in the dielectric layer formation step S39 and the second electrode layer formation step S40, the worker may change the method for forming the intermediate dielectric layer 48Z and the intermediate second electrode layer 47Z.

[0136] In the second embodiment described above, the configuration of the base body 10 may be changed. For example, the protective film 216 does not have to be made of an organic insulating material. Specifically, if the protective film 216 covers the second inductor wiring 252 and provides sufficient protection for the second inductor wiring 252, the above configuration may be adopted. Alternatively, for example, the base body 11 may cover the second inductor wiring 252 instead of the protective film 216.

[0137] For example, the effective relative permeability of the protective film 216 may be 1 or less. Specifically, if there is little need to improve the inductance of the inductor section 50, the above configuration may be adopted.

[0138] In the second embodiment described above, the configuration of the capacitor section 30 may be changed. For example, the capacitor section 30 does not need to include the shielding body 235. Specifically, if there is little possibility that the characteristics of the first electrode layer 46 of the capacitor section 30 will change due to electromagnetic waves, the above configuration may be adopted.

[0139] In the second embodiment described above, the configuration of the inductor section 50 may be changed. For example, when viewing the semiconductor device 200 through the third positive direction ZA, the second inductor wiring 252 does not have to overlap with the first inductor wiring 251. Specifically, if there is little need to increase the inductance of the entire inductor section 50, the above configuration may be adopted.

[0140] For example, the minimum dimension 252H of the second inductor wiring 252 in the direction perpendicular to the first main surface 100A may be the same as the minimum dimension 251H of the first inductor wiring 251 in the direction perpendicular to the first main surface 100A. Also, for example, the minimum dimension 252H of the second inductor wiring 252 in the direction perpendicular to the first main surface 100A may be smaller than the minimum dimension 251H of the first inductor wiring 251 in the direction perpendicular to the first main surface 100A. As a specific example, if there is little need to suppress the increase in the DC resistance of the second inductor wiring 252, the above configuration may be adopted.

[0141] In the second embodiment described above, other configurations may be changed. For example, the second terminal 282T and the third terminal 283T may be electrically connected. Also, in this configuration, the second terminal 282T and the third terminal 283T may be integrally formed. This point can also be changed in the third embodiment described above.

[0142] In the third embodiment described above, the configuration of the inductor section 50 may be changed. For example, the second area 352D may be the same as the first area 351D, or it may be smaller than the first area 351D. Specifically, if there is little need to increase the inductance of the second inductor wiring 352, the above configuration may be adopted.

[0143] For example, the second inductor wiring 352 may be located on the same layer as the capacitor section 30 in a direction perpendicular to the first main surface 100A. Specifically, if there is little need to suppress the increase in the dimensions of the semiconductor device 100 in a direction parallel to the first main surface 100A by adopting the structure of the capacitor section 30, then the second inductor wiring 352 may be located on the same layer as the capacitor section 30.

[0144] 10...Base body 11...Base body main body 12...Substrate 13...Insulator 14...Insulating layer 16...First protective film 17...Second protective film 30...Capacitor section 31...Barrier film 32...Wiring section 41...Aluminum oxide body 42...Hole 42A...First hole 42B...Second hole 42D...Inner diameter 46...First electrode layer 47...Second electrode layer 48...Dielectric layer 50...Inductor section 51...Inductor wiring 61...Capacitor wiring layer 71...First lead layer 72...Second lead layer 73...Third lead layer 81...First columnar wiring 82...Second columnar wiring 83...Third columnar wiring 100...Semiconductor device

Claims

1. A semiconductor device comprising: a base body having a planar main surface; a capacitor portion located inside the base body; and an inductor portion located inside the base body and partially or entirely located on the same layer as the capacitor portion in a direction perpendicular to the main surface, wherein when a specific direction perpendicular to the main surface is defined as the positive direction and the direction opposite to the positive direction is defined as the negative direction, the capacitor portion comprises: an aluminum oxide body having a plurality of holes extending from the outer surface on the positive direction side to the negative direction side; a first electrode layer laminated on the outer surface on the positive direction side of the aluminum oxide body and on the inner surfaces of the plurality of holes; a dielectric layer laminated on the side opposite to the aluminum oxide body relative to the first electrode layer; and a second electrode layer laminated on the side opposite to the first electrode layer relative to the dielectric layer.

2. The semiconductor device according to claim 1, wherein the inductor portion has inductor wiring extending parallel to the main surface so as to rotate around a pivot axis perpendicular to the main surface, and when viewed through in the forward direction, the inductor wiring does not overlap with the capacitor portion.

3. The semiconductor device according to claim 1 or claim 2, wherein the inductor portion has inductor wiring extending parallel to the main surface, and the minimum width dimension of the inductor wiring is 100 times or more the inner diameter of the hole.

4. The semiconductor device according to any one of claims 1 to 3, wherein the element comprises an insulator having a higher electrical resistance than the aluminum oxide body, the insulator is located in the same layer as the aluminum oxide body in a direction perpendicular to the main surface, and covers the outer surface of the aluminum oxide body when viewed through in the forward direction.

5. The semiconductor device according to any one of claims 1 to 4, wherein the capacitor portion is located in the same layer as the aluminum oxide body in a direction perpendicular to the main surface, covers the outer surface of the aluminum oxide body when viewed through in the forward direction, and comprises a shield body mainly composed of aluminum.

6. The semiconductor device according to any one of claims 1 to 5, wherein the capacitor portion is located in the same layer as the aluminum oxide body in a direction perpendicular to the main surface and comprises a wiring body mainly composed of aluminum, and a relay layer formed on the negative-direction outer surface of the aluminum oxide body and the negative-direction outer surface of the wiring body, and electrically connecting the first electrode layer and the wiring body.

7. The semiconductor device according to any one of claims 1 to 6, wherein the main component of the inductor is aluminum.

8. The semiconductor device according to any one of claims 1 to 7, wherein the element comprises an inorganic compound, is located in the same layer as the inductor portion in a direction perpendicular to the main surface, and comprises an insulator that covers the outer surface of the inductor portion when viewed through in the forward direction.

9. The semiconductor device according to any one of claims 1 to 8, wherein, among the holes, those on which the first electrode layer is laminated on the inner surface are designated as first holes, and those on which the first electrode layer is not laminated on the inner surface are designated as second holes, and when viewed through in the forward direction, the plurality of second holes are located outward relative to the plurality of first holes.

10. The semiconductor device according to any one of claims 1 to 9, wherein the element comprises an element body covering the capacitor portion and the inductor portion, and a protective film made of an organic insulating material and formed on the forward side relative to the element body, wherein when viewed through in the forward direction, the protective film is located in a place that overlaps with the capacitor portion and the inductor portion, and the outer edge of the protective film is located inward relative to the outer edge of the element body.

11. The semiconductor device according to any one of claims 1 to 10, wherein the inductor portion comprises a first inductor wiring extending parallel to the main surface so as to rotate around a pivot axis perpendicular to the main surface, and a second inductor wiring electrically connected to the first end of the first inductor wiring, wherein the second inductor wiring extends parallel to the main surface so as to rotate around a pivot axis perpendicular to the main surface, and overlaps with the first inductor wiring when viewed through in the forward direction.

12. The semiconductor device according to claim 11, wherein the minimum dimension of the first inductor wiring in a direction perpendicular to the main surface is smaller than the minimum dimension of the second inductor wiring in a direction perpendicular to the main surface.

13. The semiconductor device according to claim 11 or 12, wherein the element comprises an element body covering the capacitor portion and the first inductor wiring, and a protective film made of an organic insulating material and formed on the positive side with respect to the element body, wherein the protective film is located in the same layer as the second inductor wiring in a direction perpendicular to the main surface, and covers the outer surface of the second inductor wiring when viewed through in the positive direction.

14. The semiconductor device according to claim 13, wherein the effective relative permeability of at least a portion of the protective film is greater than 1.

15. The semiconductor device according to any one of claims 11 to 14, wherein the second inductor wiring is located in a different layer from the capacitor portion in a direction perpendicular to the main surface, and when viewed through in the forward direction, the area of ​​the smallest rectangle surrounding the first inductor wiring is defined as the first area, and the area of ​​the smallest rectangle surrounding the second inductor wiring is defined as the second area, the second area is larger than the first area.

16. A method for manufacturing a semiconductor device, comprising: a wiring formation step of forming an intermediate body mainly composed of aluminum and an inductor wiring mainly composed of aluminum on the main surface of a base substrate; an anodizing step, performed after the wiring formation step, in which, when the direction from the base substrate toward the intermediate body is defined as the positive direction and the opposite direction is defined as the negative direction, a part or all of the intermediate body is converted into an aluminum oxide body having a plurality of holes extending from the outer surface on the positive direction side to the negative direction by an anodizing method; a first electrode layer formation step, performed after the anodizing step, of laminating a first electrode layer on the outer surface on the positive direction side and the inner surfaces of the plurality of holes of the aluminum oxide body; a dielectric layer formation step, performed after the first electrode layer formation step, of laminating a dielectric layer on the side of the first electrode layer opposite to the aluminum oxide body; and a second electrode layer formation step, performed after the dielectric layer formation step, of laminating a second electrode layer on the side of the dielectric layer opposite to the first electrode layer.

17. The method for manufacturing a semiconductor device according to claim 16, wherein in the wiring formation step, the intermediate and the inductor wiring are formed by chemical vapor deposition; in the first electrode layer formation step, the first electrode layer is laminated by atomic layer deposition; in the dielectric layer formation step, the dielectric layer is laminated by atomic layer deposition; and in the second electrode layer formation step, the second electrode layer is laminated by atomic layer deposition.

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