Transistor having an independently controlled body contact region which has a reduced length to reduce parasitic capacitance

The transistor design with an independently controlled body contact region reduces parasitic capacitance and enhances device performance by minimizing off-state current leakage and improving threshold voltage tuning, addressing issues in conventional FETs.

WO2026151654A1PCT designated stage Publication Date: 2026-07-16QUALCOMM INC
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
QUALCOMM INC
Filing Date
2026-01-05
Publication Date
2026-07-16

AI Technical Summary

Technical Problem

Conventional field-effect transistors (FETs) experience increased internal resistance and threshold voltage fluctuations due to hole accumulation in the body region, leading to parasitic capacitance and runaway drain current, which affects the performance and safety of electronic devices.

Method used

A transistor design with an independently controlled body contact region having a reduced length is implemented, reducing parasitic capacitance and enabling flexible tuning of threshold voltage, thereby improving the performance of low-noise amplifiers and radio frequency switches.

Benefits of technology

The reduced parasitic capacitance and independent body control enhance the functionality and safety of electronic devices by minimizing off-state current leakage and improving compliance with International Electrotechnical Commission standards.

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Abstract

A transistor has an independently controlled body contact region which has a reduced length to reduce parasitic capacitance. The transistor includes a body formed from a semiconductor layer. The source and drain regions extend to a source end and to a drain end, respectively. A poly region includes a gate region above the body to generate an electric field in the body and control the flow of current in the body. The gate region has a gate length and a gate width extending from a first gate end to a second gate end. The poly region also includes a poly extension region which extends from the first gate end. The body contact region is below the poly extension region and has a second polarity and is directly adjacent to a third second side of the body. The body contact region has a reduced length approximately equal to the gate length.
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