Radio frequency transmitting circuit, radio frequency front-end module, and communication device

Abstract

Embodiments of the present application provide a radio frequency transmitting circuit, a radio frequency front-end module, and a communication device, for use in alleviating the phenomenon of an excessively large module area. The radio frequency transmitting circuit comprises a plurality of power amplification circuits and voltage generation circuits; the plurality of power amplification circuits include a first power amplification circuit and a second power amplification circuit; the first power amplification circuit comprises first power transistors, the second power amplification circuit comprises second power transistors, and each voltage generation circuit is coupled to a gate of the corresponding first power transistor and a gate of the corresponding second power transistor; and the first power amplification circuit is configured to process a signal in a first frequency band, and the second power amplification circuit is configured to process a signal in a second frequency band. By means of the described configurations, one voltage generation circuit can support power amplification circuits of different frequency bands to operate in corresponding frequency bands, helping reduce the number of devices in the radio frequency transmitting circuit, and thus helping reduce the module area occupied by the radio frequency transmitting circuit.

Description

RF transmitting circuits, RF front-end modules, and communication equipment

[0001] This application claims priority to Chinese patent application filed on January 15, 2025, with application number 202510070379.1 and entitled "RF transmitting circuit, RF front-end module and communication equipment", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of communication technology, specifically to a radio frequency transmitting circuit, a radio frequency front-end module, and a communication device. Background Technology

[0003] With the development of wireless communication technology, electronic devices with mobile communication or wireless communication functions have become increasingly common, providing wireless communication services to users. In these electronic devices, processing radio frequency (RF) signals is a frequent practice. For example, before transmitting RF signals, a power amplifier (PA) is needed to increase the output power of the RF signal. However, the RF transmitting circuits used in multi-frequency power amplifiers in related technologies have a large module area, increasing module costs. Summary of the Invention

[0004] This application provides an RF transmitting circuit, an RF front-end module, and a communication device to improve the problem of large module area and increased module cost.

[0005] To achieve the above objectives, the embodiments of this application provide the following solutions:

[0006] On one hand, a radio frequency transmitting circuit is provided, including multiple power amplifier circuits and a voltage generating circuit. The multiple power amplifier circuits include a first power amplifier circuit and a second power amplifier circuit. The first power amplifier circuit includes a first power transistor, and the second power amplifier circuit includes a second power transistor. The voltage generating circuit is coupled to the gate of the first power transistor and the gate of the second power transistor, respectively. The first power amplifier circuit is used to process signals in a first frequency band, and the second power amplifier circuit is used to process signals in a second frequency band.

[0007] With the above configuration, a voltage generation circuit can support power amplifier circuits of different frequency bands to work in the corresponding frequency bands, which helps to reduce the number of components in the RF transmitting circuit, and thus helps to reduce the module area occupied by the RF transmitting circuit.

[0008] In some embodiments, the first power amplifier circuit includes a plurality of first power transistors coupled in series, and the second power amplifier circuit includes a plurality of second power transistors coupled in series; the number of voltage generation circuits is multiple, with each voltage generation circuit coupled to one first power transistor and one second power transistor. With the above configuration, multiple voltage generation circuits can support multi-stage power amplifier circuits operating in different frequency bands within their respective frequency bands.

[0009] In some embodiments, the number of voltage generation circuits is the same as the number of first power transistors; and / or, the number of voltage generation circuits is the same as the number of second power transistors. It is understood that in related technologies, the number of voltage generation circuits can be equal to the sum of the number of multiple first power transistors and the number of multiple second power transistors. This arrangement helps to reduce the number of devices within the RF transmitting circuit, thereby reducing the module area occupied by the RF transmitting circuit.

[0010] In some embodiments, the voltage generation circuit is configured to output a first bias voltage signal to the first power transistor; the voltage generation circuit is also configured to output a second bias voltage signal to the second power transistor. This configuration allows a single voltage generation circuit to support the operation of power amplifier circuits in different operating frequency bands.

[0011] In some embodiments, the radio frequency transmitting circuit includes a controller, which includes a voltage generation circuit, a register, and multiple calibration circuits. The controller has an interface for receiving external signals. The register is coupled between the controller's interface and a voltage generation circuit. The multiple calibration circuits are coupled between the controller's interface and the register, and are connected in parallel. With this configuration, the register can store the data signal output by the calibration circuit. The voltage generation circuit can calibrate and output a bias voltage signal based on the data signal output by the calibration circuit, thereby enabling the bias voltage signal to turn on the corresponding power transistor, thus activating the corresponding power amplifier circuit.

[0012] In some embodiments, the multiple calibration circuits include a first calibration circuit and a second calibration circuit; the first calibration circuit is used to output a first data signal to a register, and the second calibration circuit is used to output a second data signal to the register; the register is used to receive a first control signal and output the first data signal to a voltage generation circuit; the voltage generation circuit is used to output a first bias voltage signal to a first power transistor when the register receives the first control signal; the register is also used to receive a second control signal and output the second data signal to the voltage generation circuit; the voltage generation circuit is also used to output a second bias voltage signal to a second power transistor when the register receives the second control signal. With the above configuration, the same voltage generation circuit can support the calibration of the gate bias voltage of multiple power transistors in different frequency bands.

[0013] In some embodiments, the number of calibration circuits is equal to the number of power amplifier circuits. With this configuration, the voltage generation circuit can calibrate the gate bias voltages of power transistors at multiple different frequency bands one-to-one using multiple calibration circuits.

[0014] In some embodiments, a power supply circuit is further included. The power supply circuit is selectively coupled to the drain of the first power transistor and selectively coupled to the drain of the second power transistor. The power supply circuit is used to supply power to the first power transistor at a first moment and to supply power to the second power transistor at a second moment. This configuration allows the same power supply circuit to supply power to different power amplifier circuits in a time-division manner, thereby enabling switching between the first and second power amplifier circuits for operation in both the first and second frequency bands. Furthermore, this reduces the number of power supply circuits, which in turn reduces the number of peripheral devices in the RF transmitting circuit and consequently reduces the area occupied by the peripheral modules.

[0015] In some embodiments, the radio frequency transmitting circuit includes a controller, which includes a voltage generating circuit and a switching circuit. A power supply circuit is coupled to a first power transistor via the switching circuit, and also to a second power transistor via the switching circuit. This configuration allows the same power supply circuit to supply power to different power amplifier circuits in a time-division manner, thereby enabling switching between the first and second power amplifier circuits for operation in both the first and second frequency bands.

[0016] In some embodiments, the switching circuit and the voltage generation circuit are CMOS devices.

[0017] In some embodiments, the multiple power amplifier circuits are HEMT devices.

[0018] In some embodiments, the semiconductor material of the first power transistor and the second power transistor includes gallium nitride. For example, the first power transistor and the second power transistor described above can both be gallium nitride power amplifiers.

[0019] On the other hand, a radio frequency front-end module is also provided, including the radio frequency transmitting circuit in the above embodiments. The radio frequency front-end module provided by the embodiments of this application includes the radio frequency transmitting circuit as described above, and therefore has all the above-described beneficial effects, which will not be repeated here.

[0020] In some embodiments, the RF front-end module further includes an RF receiving circuit and an RF switching circuit; the RF switching circuit is used to switch coupling with the RF transmitting circuit or the RF receiving circuit.

[0021] On the other hand, an integrated circuit chip is also provided, including a package layer and a controller, the package layer covering the controller; the controller includes a voltage generation circuit, a register and multiple calibration circuits, the controller interface is used to receive external signals, the register is coupled between the controller interface and the voltage generation circuit, the multiple calibration circuits are coupled between the controller interface and the register, and the multiple calibration circuits are connected in parallel; the controller also includes a power switch circuit, the power switch circuit is coupled to the controller interface.

[0022] On the other hand, a communication device is also provided, further comprising a communication chip, at least one feed radiator, and a radio frequency transmitting circuit as described in the above embodiments. The communication chip is coupled to multiple power amplifier circuits; both the first power amplifier circuit and the second power amplifier circuit are coupled to the same feed radiator; or, the first power amplifier circuit is coupled to one feed radiator, and the second power amplifier circuit is coupled to another feed radiator. The communication device provided by the embodiments of this application includes the radio frequency transmitting circuit as described above, and therefore has all the aforementioned beneficial effects, which will not be repeated here.

[0023] On the other hand, a radio frequency transmitting circuit is also provided, including multiple power amplifier circuits and a power supply circuit. The multiple power amplifier circuits include a first power amplifier circuit and a second power amplifier circuit. The first power amplifier circuit includes a first power transistor, and the power supply circuit is switchably coupled to the drain of the first power transistor. The second power amplifier circuit includes a second power transistor, and the power supply circuit is switchably coupled to the second power transistor. The power supply circuit is used to supply power to the first power transistor at a first moment and to supply power to the second power transistor at a second moment. The first power amplifier circuit is used to process signals in a first frequency band, and the second power amplifier circuit is used to process signals in a second frequency band.

[0024] In some embodiments, the power supply circuit is coupled to the first power transistor through a switching circuit, and the power supply circuit is coupled to the second power transistor through a switching circuit; the switching circuit is a power switching circuit.

[0025] On the other hand, a communication device is also provided, which further includes a power supply battery and the radio frequency transmitting circuit in the above embodiments, wherein the power supply circuit of the radio frequency transmitting circuit is coupled to the power supply battery. The communication device provided by the embodiments of this application includes the radio frequency transmitting circuit as described above, and therefore has all the above-described beneficial effects, which will not be repeated here. Attached Figure Description

[0026] Figure 1 is a structural diagram of a communication device provided in an embodiment of this application;

[0027] Figure 2 is a structural diagram of a radio frequency front-end module provided in an embodiment of this application;

[0028] Figure 3 is a basic structural diagram of a single power tube power amplifier provided in a related technical embodiment;

[0029] Figure 4 is a structural diagram of a radio frequency transmitting circuit provided in a related technical embodiment;

[0030] Figure 5 is a structural diagram of a radio frequency transmitting circuit provided in an embodiment of this application;

[0031] Figure 6 is a structural diagram of another radio frequency transmitting circuit provided in an embodiment of this application;

[0032] Figure 7 is a structural diagram of another radio frequency transmitting circuit provided in an embodiment of this application;

[0033] Figure 8 is a structural diagram of another radio frequency transmitting circuit provided in an embodiment of this application;

[0034] Figure 9 is a timing diagram of a switching scenario for a radio frequency transmitting circuit provided in an embodiment of this application;

[0035] Figure 10 is a timing diagram of a reset scenario for a radio frequency transmitting circuit provided in an embodiment of this application;

[0036] Figure 11 is a structural diagram of another radio frequency transmitting circuit provided in an embodiment of this application. Detailed Implementation

[0037] The technical solutions of the embodiments of this application will be described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.

[0038] Hereinafter, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature.

[0039] Furthermore, in the embodiments of this application, directional terms such as "up," "down," "left," "right," "horizontal," and "vertical" are defined relative to the orientation of the components shown in the accompanying drawings. It should be understood that these directional terms are relative concepts, used for relative description and clarification, and can change accordingly depending on the orientation of the components in the accompanying drawings.

[0040] In the embodiments of this application, unless otherwise explicitly specified and limited, the term "connection / linking" should be interpreted broadly, and may refer to a mechanical connection or a physical connection. That is, A and B being connected or linked may mean that there are fastening components (such as screws, bolts, rivets, etc.) between A and B, or that A and B are in contact with each other and are difficult to separate.

[0041] Communication connection: This can refer to the transmission of electrical signals, such as wireless communication connections and / or wired communication connections. Wireless communication connections do not require a physical medium and are not considered connections that limit the structure of a product.

[0042] Coupling can be understood as direct coupling and / or indirect coupling. "Coupled connection" can be understood as a direct coupling connection and / or indirect coupling connection. Direct coupling can also be called "electrical connection," which can be understood as physical contact and electrical conduction between components; it can also be understood as the form of connection between different components in a circuit structure through physical lines that can transmit electrical signals, such as copper foil or wires on a printed circuit board (PCB). "Indirect coupling" can be understood as electrical conduction between two conductors through a gap / non-contact method. In one embodiment, indirect coupling can also be called capacitive coupling, for example, signal transmission is achieved by forming an equivalent capacitance through coupling between the gaps between two conductive parts.

[0043] Connection: The process of making two or more components conduct or connect through the above-mentioned "electrical connection" or "indirect coupling" to transmit signals / energy can be called connection.

[0044] A radiator, or antenna stub, is a device in an antenna used to receive / transmit electromagnetic wave radiation. In some cases, the term "antenna" is narrowly defined as a radiator, which converts guided wave energy from the transmitter into radio waves, or converts radio waves into guided wave energy, for radiating and receiving radio waves. The modulated high-frequency current energy (or guided wave energy) generated by the transmitter is transmitted to the transmitting radiator via a feed line, where it is converted into electromagnetic wave energy of a specific polarization and radiated in the desired direction. The receiving radiator converts electromagnetic wave energy of a specific polarization from a specific direction in space back into modulated high-frequency current energy, which is then transmitted to the receiver input via a feed line.

[0045] Radiators (or antenna stubs) may include conductors with specific shapes and sizes, such as wires or sheets, and this application does not limit the specific shape. In one embodiment, a wire radiator may be simply referred to as a wire antenna. In one embodiment, a wire radiator may be implemented by a conductive frame, and may also be referred to as a frame antenna. In one embodiment, a wire radiator may be implemented by a support conductor, and may also be referred to as a support antenna. In one embodiment, the wire diameter (e.g., including thickness and width) of the wire radiator, or the radiator of the wire antenna, is much smaller than the wavelength (e.g., the wavelength of the medium) (e.g., less than 1 / 16 of the wavelength), and the length may be comparable to the wavelength (e.g., the wavelength of the medium) (e.g., a length of approximately 1 / 8 of the wavelength, or 1 / 8 to 1 / 4, or 1 / 4 to 1 / 2, or longer). The main forms of wire antennas include dipole antennas, half-wave dipole antennas, monopole antennas, loop antennas, and inverted F antennas (also known as IFAs). For example, in a dipole antenna, each dipole antenna typically includes two radiating stubs, each fed from the feed end of the radiating stub by a feed section. For example, an inverted-F antenna (IFA) can be considered as a monopole antenna with an added ground path. An IFA antenna has one feed point and one ground point, and is called an inverted-F antenna because its side view is inverted-F shaped. In one embodiment, the sheet radiator may include a microstrip antenna or a patch antenna, such as a planar inverted-F antenna (also known as a PIFA). In one embodiment, the sheet radiator may be implemented using a planar conductor (e.g., a conductive sheet or conductive coating). In one embodiment, the sheet radiator may include a conductive sheet, such as a copper sheet. In one embodiment, the sheet radiator may include a conductive coating, such as silver paste. The shape of the sheet radiator includes circular, rectangular, and annular shapes, and this application does not limit the specific shape. The structure of a microstrip antenna generally consists of a dielectric substrate, a radiator, and a ground plane, wherein the dielectric substrate is disposed between the radiator and the ground plane.

[0046] Radiators (or antenna stubs) may also include slots or gaps formed on a conductor, for example, closed or semi-closed slots or gaps formed on a grounded conductor surface. In one embodiment, a slotted or slit radiator may be simply referred to as a slot antenna or a gap antenna. In one embodiment, the radial dimension (e.g., including width) of the slot or gap of the slot antenna / gap antenna is much smaller than the wavelength (e.g., the dielectric wavelength) (e.g., less than 1 / 16 of the wavelength), while the length dimension may be comparable to the wavelength (e.g., the dielectric wavelength) (e.g., a length of approximately 1 / 8 of the wavelength, or 1 / 8 to 1 / 4, or 1 / 4 to 1 / 2, or longer). In one embodiment, a radiator with a closed slot or gap may be simply referred to as a closed slot antenna. In one embodiment, a radiator with a semi-closed slot or gap (e.g., an opening added to a closed slot or gap) may be simply referred to as an open slot antenna. In some embodiments, the gap shape is elongated. In some embodiments, the length of the gap is approximately half a wavelength (e.g., the dielectric wavelength). In some embodiments, the length of the gap is approximately an integer multiple of a wavelength (e.g., one dielectric wavelength). In some embodiments, the slot can be fed by transmission lines connected across one or both sides, thereby exciting a radio frequency electromagnetic field on the slot and radiating electromagnetic waves into space. In one embodiment, the radiator of the slot antenna or gap antenna can be implemented by a conductive frame grounded at both ends, also known as a frame antenna; in this embodiment, the slot antenna or gap antenna can be viewed as including a linear radiator, the linear radiator being spaced apart from the ground and grounded at both ends, thereby forming a closed or semi-closed slot or gap. In one embodiment, the radiator of the slot antenna or gap antenna can be implemented by a support conductor grounded at both ends, also known as a support antenna.

[0047] Communication / Operating Frequency Band: Regardless of the type of antenna, it always operates within a certain frequency range (bandwidth). For example, an antenna supporting the B40 band operates within the frequency range of 2300MHz to 2400MHz, or in other words, its operating frequency band includes the B40 band. The frequency range that meets the specifications can be considered the antenna's operating frequency band. The width of the operating frequency band is called the operating bandwidth. The operating bandwidth of an omnidirectional antenna may reach 3-5% of the center frequency. The operating bandwidth of a directional antenna may reach 5-10% of the center frequency. Bandwidth can be considered as a frequency range on both sides of the center frequency (e.g., the resonant frequency of a dipole), where the antenna characteristics are within the acceptable range of the center frequency.

[0048] The resonant frequency band and the operating frequency band can be the same or can partially overlap. In one embodiment, one or more resonant frequency bands of the antenna can cover one or more operating frequency bands of the antenna.

[0049] End / Point: The term "end / point" in the context of the antenna radiator's first end / second end / feed end / ground end / feed point / ground point / connection point should not be narrowly interpreted as necessarily an endpoint or end physically disconnected from other radiators. It can also be considered a point or segment on a continuous radiator. In one embodiment, "end / point" can include a connection / coupling region on the antenna radiator that couples to other conductive structures. For example, a feed end / feed point can be a coupling region on the antenna radiator that couples to a feed structure or feed circuit (e.g., a region facing a part of the feed circuit). Similarly, a ground end / ground point can be a connection / coupling region on the antenna radiator that couples to a ground structure or ground circuit.

[0050] The terms collinearity, coaxiality, coplanarity, symmetry (e.g., axial symmetry, or central symmetry), parallelism, perpendicularity, and similarity (e.g., same length, same width, etc.) mentioned in the embodiments of this application are all relative to the current technological level, and not absolute and strict mathematical definitions. There may be a deviation of less than a predetermined threshold (e.g., 1 mm, 0.5 mm, or 0.1 mm) between the edges of two collinear radiating stubs or two antenna elements in the line width direction. There may be a deviation of less than a predetermined threshold between the edges of two coplanar radiating stubs or two antenna elements in the direction perpendicular to their coplanar plane. There may be a deviation of a predetermined angle between two parallel or perpendicular antenna elements. In one embodiment, the predetermined threshold may be less than or equal to a threshold of 1 mm, for example, the predetermined threshold may be 0.5 mm or 0.1 mm. In one embodiment, the predetermined angle may be an angle within the range of ±10°, for example, the predetermined angle deviation is ±5°.

[0051] The same operating frequency band mentioned in the embodiments of this application (also known as, same frequency) can be understood as either of the following two situations:

[0052] 1) The operating frequency bands of the first antenna and the second antenna include the same communication frequency band. In one embodiment, both the first antenna and the second antenna serve as sub-units in a MIMO antenna system. For example, the operating frequency bands of both the first antenna and the second antenna include sub-future communication network frequency bands in 5G.

[0053] 2) The operating frequency bands of the first antenna and the second antenna partially overlap. For example, the operating frequency band of the first antenna includes B35 (1.85-1.91GHz) in LTE, while the operating frequency band of the second antenna includes B39 (1.88-1.92GHz) in LTE.

[0054] The technical solutions of the embodiments of this application will now be described with reference to the accompanying drawings.

[0055] The technical solution of this application can be applied to various communication devices that include radio frequency transmitting circuits. This communication device can be deployed on land, including indoors or outdoors, handheld or vehicle-mounted. It can also be deployed on water (such as ships). Furthermore, it can be deployed in the air (e.g., on airplanes, balloons, and satellites). For example, this communication device can be a terminal or a base station. For example, the terminal includes, but is not limited to: mobile phone, tablet computer, laptop computer, PDA, mobile internet device (MID), wearable device (e.g., smartwatch, smart bracelet, pedometer, etc.), in-vehicle device (e.g., car, bicycle, electric vehicle, airplane, ship, train, high-speed rail, etc.), virtual reality (VR) device, augmented reality (AR) device, wireless terminal in industrial control, smart home device (e.g., refrigerator, television, air conditioner, electricity meter, etc.), smart robot, workshop equipment, wireless terminal in self-driving, wireless terminal in remote medical surgery, wireless terminal in smart grid, wireless terminal in transportation safety, wireless terminal in smart city, or wireless terminal in smart home, flying equipment (e.g., smart robot, hot air balloon, drone, airplane), radio frequency front-end module, low noise amplifier, etc.

[0056] Figure 1 is a structural diagram of a communication device provided in an embodiment of this application, which is illustrated using a mobile phone as an example. The communication device includes: a radio frequency (RF) front-end module 101, a memory 102, a processor 103, a sensor assembly 104, a multimedia assembly 105, a power supply assembly 106, an input / output interface 107, and a power radiator 108.

[0057] The following is a detailed introduction to the various components of this mobile phone, with reference to Figure 1:

[0058] The RF front-end module 101 can be used to receive and transmit signals during information transmission or calls. For example, after receiving downlink data from the outside through the feed radiator 108, the communication device processes it in the processor 103, and sends uplink data to the feed radiator 108, which then transmits it out of the communication device.

[0059] The memory 102 can be used to store data, software programs, and modules. The mobile phone may include high-speed random access memory and may also include non-volatile memory, such as at least one disk storage device, flash memory device, or other volatile solid-state storage device.

[0060] The processor 103 is the control center of the mobile phone. It connects various parts of the device through various interfaces and lines. By running or executing software programs and / or modules stored in the memory 102, and calling data stored in the memory 102, it performs various functions of the mobile phone and processes data, thereby monitoring the mobile phone as a whole.

[0061] Sensor assembly 104 includes one or more sensors for providing various aspects of the phone's status assessment. Sensor assembly 104 may include an accelerometer, gyroscope, magnetometer, pressure sensor, or temperature sensor. Sensor assembly 104 can detect the phone's acceleration / deceleration, orientation, on / off state, relative positioning of components, or temperature changes, etc. Furthermore, sensor assembly 104 may also include a light sensor for use in imaging applications.

[0062] The multimedia component 105 provides a screen that serves as an output interface between the mobile phone and the user. This screen can be a touch panel, and when it is a touch panel, it can be implemented as a touchscreen to receive input signals from the user. Furthermore, the multimedia component 105 also includes at least one camera; for example, it includes a front-facing camera and / or a rear-facing camera.

[0063] The power supply assembly 106 is used to provide power to the various components of the mobile phone, and the power supply assembly 106 may include one or more power supplies.

[0064] Input / output interface 107 provides an interface between processor 103 and peripheral interface modules, such as keyboards and mice.

[0065] Although not shown, the mobile phone may also include audio components and communication modules, such as audio components including a microphone and a speaker, and communication modules including one or more of the following: wireless fidelity (WiFi) module, Bluetooth module, near field communication (NFC) module, global navigation satellite system (GNSS) module, or frequency modulation (FM) module. Further details are omitted here. Those skilled in the art will understand that the mobile phone structure shown in Figure 1 does not constitute a limitation on the mobile phone and may include more or fewer components than shown, or combine certain components, or have different component arrangements.

[0066] In some embodiments, referring to FIG2, the RF front-end module 101 typically includes an RF switch circuit 2, an RF transmitting circuit TX, and an RF receiving circuit RX. The switching between the RF transmitting circuit TX and the RF receiving circuit RX can be achieved by the RF switch circuit 2.

[0067] The RF switch circuit 2 is responsible for switching between the RF receiving circuit RX and the RF transmitting circuit TX. The baseband signal is transmitted to the RF transmitting circuit TX via the transceiver. The RF transmitting circuit TX amplifies the received RF signal and outputs it to the feed radiator 108, which then transmits it out.

[0068] The radio frequency receiving circuit RX receives the radio frequency signal from the feed radiator 108. The radio frequency signal is amplified by the radio frequency receiving circuit RX and output, and then transmitted to the baseband via the transceiver.

[0069] In some embodiments, the radio frequency transmitting circuit TX includes a multi-frequency power amplifier 30. For example, the multi-frequency power amplifier 30 includes multiple power amplifier circuits. Each power amplifier circuit may include a power amplifier (PA). The power amplifier in this embodiment can be a power transistor type power amplifier. Figure 3 shows the basic structure of a single power transistor type power amplifier. A voltage generation circuit 91 is provided at the gate of the power transistor M, and a power supply circuit 80 is provided at the drain of the power transistor M. The bias state between the terminals of the power transistor M is controlled by the voltage generation circuit 91 and the power supply circuit 80, so that the power transistor M is in a power amplification state. The power transistor M in the power amplification state can amplify the received signal.

[0070] Referring to Figures 4 and 5, the multiple power amplifier circuits include a first power amplifier circuit PA1 and a second power amplifier circuit PA2. The first power amplifier circuit PA1 includes a first power transistor M1, and the second power amplifier circuit PA2 includes a second power transistor M2.

[0071] The first power amplifier circuit PA1 is used to process signals in the first frequency band. Here, "processing" can be understood as the first power amplifier circuit PA1 amplifying the power of the signals in the first frequency band. For example, the first power amplifier circuit PA1 is used to receive a first signal in the first frequency band and output a second signal in the first frequency band. The power of the second signal is greater than the power of the first signal.

[0072] The second power amplifier circuit PA2 is used to process signals in the second frequency band. Here, "processing" can be understood as the second power amplifier circuit PA2 amplifying the power of the signals in the second frequency band. For example, the second power amplifier circuit PA2 is used to receive a third signal in the second frequency band and output a fourth signal in the second frequency band; the power of the fourth signal is greater than the power of the third signal.

[0073] The signals in the first and second frequency bands can include radio frequency signals from different frequency bands under the same communication standard. Communication standards include 3G / 4G / 5G, etc., and it should be understood that the embodiments of this application can also be applied to future cellular communication standards. For example, the signals in the first and second frequency bands can both be 5G communication (fifth-generation mobile communication technology 5G) (that is, used to support 5G cellular communication), and are two different frequency bands within the 5G cellular frequency bands. For example, the first frequency band can be the N77 band (3300MHz-4200MHz), and the second frequency band can be the N79 band (4400MHz-5000MHz).

[0074] The signals in the first and second frequency bands can be radio frequency signals from different frequency bands under different communication standards. For example, communication standards can include GSM (Global System for Mobile Communications), UMTS (Universal Mobile Telecommunications System), LTE (Long Term Evolution), and NR (New Radio). For instance, the signal in the first frequency band could be a GSM communication standard signal, and the signal in the second frequency band could be a UMTS communication standard signal.

[0075] In some embodiments, the radio frequency transmitting circuit TX further includes a power amplifier controller and a power supply circuit 80. The power amplifier controller will be referred to as controller 90 below. Controller 90 may include a first voltage generation circuit and a second voltage generation circuit. The power supply circuit 80 may include a first power supply circuit and a second power supply circuit.

[0076] Referring to Figure 4, a first voltage generating circuit is provided at the gate of the first power transistor M1, and a first power supply circuit is provided at the drain of the first power transistor M1. A second voltage generating circuit is provided at the gate of the second power transistor M2, and a second power supply circuit is provided at the drain of the second power transistor M2. In order to switch between the first frequency band and the second frequency band, either the first power amplifier circuit PA1 or the second power amplifier circuit PA2 can be switched on.

[0077] For example, when the RF transmitting circuit TX operates in the first frequency band, it can operate through the first power supply circuit and the first voltage generation circuit, thereby turning on the first power transistor M1; at the same time, it can disable the second power supply circuit, so that the second power transistor M2 is not turned on. Conversely, when the RF transmitting circuit TX operates in the second frequency band, it can operate through the second power supply circuit and the second voltage generation circuit, while simultaneously disabling the first power supply circuit.

[0078] In the above embodiment, two power amplifier circuits operating in different frequency bands need to be respectively equipped with two voltage generation circuits 91. That is, a single voltage generation circuit 91 only supports one power amplifier circuit to work, which increases the number of devices in the RF transmitting circuit TX and increases the module area occupied by the RF transmitting circuit TX.

[0079] In some embodiments, the voltage generation circuit 91 can be used to output a first bias voltage signal to the first power transistor M1. The first bias voltage signal can be used to turn on the first power transistor M1. The voltage generation circuit 91 can also be used to output a second bias voltage signal to the second power transistor M2. The second bias voltage signal can also be used to turn on the second power transistor M2. Through the above configuration, a single voltage generation circuit 91 can support the operation of power amplifier circuits in different operating frequency bands.

[0080] In view of this, referring to FIG5, the voltage generating circuit 91 in the embodiment of this application can be coupled to the gate of the first power transistor M1 and the gate of the second power transistor M2, respectively.

[0081] For example, the drains of the first power transistor M1 and the second power transistor M2 can both be coupled to the power supply circuit 80. In some embodiments, the radio frequency transmitting circuit TX may further include a power supply port VCC, and the drains of the first power transistor M1 and the second power transistor M2 can both be coupled to the same power supply circuit 80 through the power supply port VCC. The power supply circuit 80 can be used to supply power to the first power transistor M1 at a first moment; the power supply circuit 80 can also be used to supply power to the second power transistor M2 at a second moment.

[0082] In some embodiments, the power supply circuit 80 may be coupled to a power supply battery 99 in the communication device. For example, the power supply circuit 80 may be coupled to the power supply battery 99 via a power supply chip Charge IC. The power supply chip Charge IC is used to provide a stable supply voltage. The power supply circuit 80 may be, for example, an APT (Average Power Tracking) power supply circuit or an EMT (Envelope Tracking) power supply circuit.

[0083] In this embodiment, the radio frequency transmitting circuit TX may further include a first power port Vbat and a second power port VIO. The first power port Vbat can be coupled to the power chip Charge IC via a first power management circuit 89, and the second power port VIO can be coupled to the power chip Charge IC via a second power management circuit 88. The first power management circuit 89 can supply power to some chips (e.g., most chips other than the radio frequency chip) via the first power port Vbat, and the second power management circuit 88 can supply power to other chips (e.g., communication chips) via the second power port VIO.

[0084] The radio frequency (RF) transmitting circuit may further include an RF input port and an RF output port. The gate of the first power transistor M1 can be coupled to the communication chip 70 through the RF input port IN1, and the first power transistor M1 can also be coupled to the feed radiator 108 through the RF output port OUT1, so that the first power amplifier circuit PA1 is coupled between the communication chip 70 and the feed radiator 108. The gate of the second power transistor M2 can be coupled to the communication chip 70 through the RF input port IN2, and the second power transistor M2 can also be coupled to the feed radiator 108 through the RF output port OUT2, so that the second power amplifier circuit PA2 is coupled between the communication chip 70 and the feed radiator 108. The communication chip 70 may be, for example, an RFIC chip.

[0085] In some embodiments, the first power amplifier circuit PA1 and the second power amplifier circuit PA2 may be coupled to the same feed radiator 108, or the first power amplifier circuit PA1 and the second power amplifier circuit PA2 may be coupled to different feed radiators 108 respectively.

[0086] The communication chip 70 can output a first signal of the first frequency band to the gate of the first power transistor M1 through the RF input port IN1. At the first moment, the supply voltage signal output by the power supply circuit 80 and the first bias voltage signal output by the voltage generation circuit 91 cause the first power transistor M1 to conduct. That is, the first power amplifier circuit PA1 is turned on. The first power amplifier circuit PA1 can amplify the power of the input first signal of the first frequency band. After being amplified by the first power amplifier circuit PA1, the first signal becomes the second signal. That is, the power of the second signal is greater than the power of the first signal, and the first power amplifier circuit PA1 can output the second signal of the first frequency band.

[0087] The communication chip 70 can output a third signal in the second frequency band to the gate of the second power transistor M2 through the RF input port IN2. At the second moment, the supply voltage signal output by the power supply circuit 80 and the second bias voltage signal output by the voltage generation circuit 91 turn on the second power transistor M2. That is, it turns on the second power amplifier circuit PA2. The second power amplifier circuit PA2 can amplify the power of the input third signal in the second frequency band. After being amplified by the second power amplifier circuit PA2, the third signal becomes the fourth signal. That is, the power of the fourth signal is greater than the power of the third signal, and the second power amplifier circuit PA2 can output the fourth signal in the second frequency band.

[0088] With the above configuration, a voltage generation circuit 91 can support power amplifier circuits of different frequency bands to work in the corresponding frequency bands, which helps to reduce the number of devices in the RF transmitter circuit TX, and thus helps to reduce the module area occupied by the RF transmitter circuit TX.

[0089] In some embodiments, the semiconductor material of both the first power transistor M1 and the second power transistor M2 includes gallium nitride (GaN). Here, it can be understood that the first power transistor M1 and the second power transistor M2 can both be gallium nitride power amplifiers (GaN PAs). GaN PAs can achieve high output power density, high bandwidth, and high DC-to-RF efficiency. Since GaN PAs are depletion-mode devices, their gates need to be biased with a negative voltage. Therefore, the first bias voltage signal output by the voltage generation circuit 91 can include a negative voltage signal, and the second bias voltage signal output by the voltage generation circuit 91 can also include a negative voltage signal.

[0090] Furthermore, the multi-frequency power amplifier 30 can be a HEMT (high-electron-mobility transistor) device. That is, multiple power amplifier circuits can be HEMT devices. HEMT devices have advantages such as high breakdown electric field, high channel electron concentration, high electron mobility, and high temperature stability. The structure of an HEMT device mainly includes a substrate and a heterostructure disposed on the substrate, such as a gallium nitride (GaN) layer and an aluminum gallium nitride (AlGaN) layer.

[0091] In some embodiments, the controller 90 can be a CMOS (complementary metal oxide semiconductor) device. That is, the voltage generation circuit 91 can be a CMOS device. Because the controller 90 and the multi-frequency power amplifier 30 are manufactured using different processes, the controller 90 can be located on one integrated circuit chip, and the multi-frequency power amplifier 30 can be located on another integrated circuit chip. For example, the voltage generation circuit 91 can be located on integrated circuit chip DIE1, and the multiple power amplifier circuits can be located on integrated circuit chip DIE2.

[0092] Alternatively, in some embodiments, the controller 90 may also be a HEMT device. In this case, since the controller 90 and the multi-frequency power amplifier 30 are manufactured using the same process, the controller 90 and the multi-frequency power amplifier 30 can be disposed on the same integrated circuit chip, or the controller 90 and the multi-frequency power amplifier 30 can be disposed on different integrated circuit chips.

[0093] Alternatively, in some embodiments, chips of different process types can be formed on the same integrated circuit chip. That is, the controller 90 and the multi-frequency power amplifier 30 have different processes, and the controller 90 and the multi-frequency power amplifier 30 can be disposed on the same integrated circuit chip.

[0094] Of course, in some other embodiments, the first power transistor M1 and the second power transistor M2 described above can also be other types of power amplifiers. Accordingly, the first bias voltage signal output by the voltage generation circuit 91 can include a positive voltage signal, and the second bias voltage signal output by the voltage generation circuit 91 can also include a positive voltage signal.

[0095] The following explanation will only take the multi-frequency power amplifier 30 as a HEMT device and the voltage generation circuit 91 outputting a negative voltage signal as an example.

[0096] As described in the above embodiments, the drains of the first power transistor M1 and the second power transistor M2 can both be coupled to the power supply circuit 80 through the power supply port VCC. In some embodiments, the power supply circuit 80 can be coupled to the drain of the first power transistor M1 in a switchable manner through the power supply port VCC, and the power supply circuit 80 can be coupled to the drain of the second power transistor M2 in a switchable manner through the power supply port VCC.

[0097] For example, the power supply port VCC can be coupled to the drain of the first power transistor M1 through a switching circuit, and the power supply port VCC can be coupled to the drain of the second power transistor M2 through a switching circuit 901. The switching circuit 901 may include a first switch VA1 and a second switch VA2.

[0098] At the first moment, the switching circuit 901 can connect the power supply port VCC and the drain of the first power transistor M1, and can also de-connect the power supply port VCC and the drain of the second power transistor M2. For example, the first switch VA1 can be closed, and the second switch VA2 can be open. With the above settings, the power supply circuit 80 can supply power to the first power transistor M1, so that the first power amplifier circuit PA1 can operate, and the first power amplifier circuit PA1 can amplify the power of the radio frequency signal.

[0099] At the second moment, switching circuit 901 can either turn on the power supply port VCC and the drain of the second power transistor M2, or turn off the power supply port VCC and the drain of the first power transistor M1. For example, the second switch VA2 can be closed, and the first switch VA1 can be open. With the above settings, power supply circuit 80 can supply power to the second power transistor M2, so that the second power amplifier circuit PA2 can operate, and the second power amplifier circuit PA2 can amplify the power of the radio frequency signal.

[0100] The above configuration allows the same power supply circuit 80 to supply power to different power amplifier circuits in a time-sharing manner, thereby enabling switching between the first power amplifier circuit PA1 and the second power amplifier circuit PA2 for operation in both the first and second frequency bands. Furthermore, this reduces the number of power supply circuits 80, which in turn reduces the number of components surrounding the RF transmitter circuit TX, and consequently reduces the footprint of the peripheral modules.

[0101] In some embodiments, the switching circuit 901 can be a power switching circuit 901, allowing a larger current to flow through it. Further, the switching circuit 901 can be a CMOS device. Since the manufacturing processes of the switching circuit 901 and the multi-frequency power amplifier 30 are different, the switching circuit 901 can be disposed on one integrated circuit chip, and the multi-frequency power amplifier 30 can be disposed on another integrated circuit chip. For example, the switching circuit 901 and the voltage generation circuit 91 can both be disposed on die DIE1, and the multiple power amplifier circuits can be disposed on die DIE2.

[0102] In some embodiments, the number of power amplifier circuits can be three or more. Correspondingly, the multiple switches in the switching circuit 901 can be coupled one-to-one with the multiple power amplifier circuits, and all the switches are coupled to the power supply circuit 80. With the above configuration, the number of multiple switches in the switching circuit 901 can be the same as the number of power amplifier circuits, that is, the number of multiple switches can be the same as the number of multiple operating frequency bands. This is beneficial to reducing the number of power supply circuits 80 around the RF transmitting circuit TX, and thus to reducing the area occupied by the peripheral module.

[0103] Here, the number of switches in the switching circuit 901 can be equal to the number of power amplifier circuits, which can mean that the number of mutually coupled switches and gate voltage output ports VG are the same. In some embodiments, other switches or power amplifier circuits may also exist in the RF transmitting circuit or RF front-end module.

[0104] Of course, referring to Figure 6, in some other embodiments, the number of power supply circuits can also be the same as the number of power amplifier circuits. Multiple power supply circuits can be coupled one-to-one with multiple power amplifier circuits to allow switching between the first and second frequency bands.

[0105] Further, continuing to refer to Figure 5, the interface of the controller 90 may include the input interface of the controller 90 (e.g., P1 or P2 in Figure 5) and the gate voltage output interface VG of the controller 90.

[0106] The input interface of the controller 90 can be used to receive external signals. For example, the input interface of the controller 90 can be coupled to a processor (CPU). In some embodiments, the input interface of the controller 90 can be compatible with the MIPI (Mobile Industry Processor Interface) standard.

[0107] The gate voltage output port VG of the controller 90 can be coupled to the multi-frequency power amplifier 30. For example, the voltage generation circuit 91 can be coupled to the first power amplifier circuit PA1 and the second power amplifier circuit PA2 through the gate voltage output port VG of the controller 90.

[0108] The radio frequency transmitting circuit TX may also include a register 92 and multiple calibration circuits 93. The register 92 may be coupled between the input interface P1 of the controller 90 and a voltage generation circuit 91. The multiple calibration circuits 93 may be coupled between the input interface P2 of the controller 90 and the register 92, and the multiple calibration circuits 93 may be coupled in parallel. The calibration circuit 93 may be, for example, an eFuse (electronic fuse) single-programmable circuit or an MTP (Multi-programmable Device Protocol) circuit that can be programmed multiple times.

[0109] With the above settings, register 92 can store the data signal output by calibration circuit 93. Voltage generation circuit 91 can calibrate and output bias voltage signal through the data signal output by calibration circuit 93, thereby enabling the bias voltage signal to turn on the corresponding power transistor so that the corresponding power amplifier circuit can work.

[0110] In some embodiments, the calibration circuit 93 may include a first port 931 and a second port 932. The first port 931 of the calibration circuit 93 is coupled to the input port P2 of the controller 90, and the second port 932 of the calibration circuit 93 is coupled to the register 92. In this embodiment, a calibration circuit 93 may have one first port 931 and one second port 932. The number of multiple calibration circuits 93 may be equal to the number of multiple first ports 931; that is, the number of multiple calibration circuits 93 can be determined based on the number of multiple first ports 931. Alternatively, the number of multiple calibration circuits 93 may be equal to the number of multiple second ports 932; that is, the number of multiple calibration circuits 93 can be determined based on the number of multiple second ports 932.

[0111] In this embodiment, the number of calibration circuits 93 can be equal to the number of power amplifier circuits. That is, the number of calibration circuits 93 can be equal to the number of operating frequency bands. With the above configuration, the voltage generation circuit 91 can calibrate the gate bias voltages of power transistors in multiple different frequency bands one by one using the multiple calibration circuits 93.

[0112] Here, the number of multiple calibration circuits 93 can be equal to the number of multiple power amplifier circuits, meaning that the number of mutually coupled calibration circuits 93 and power amplifier circuits is the same. In some embodiments, other calibration circuits 93 or power amplifier circuits may also exist in the RF transmitting circuit or RF front-end module.

[0113] The multiple calibration circuits 93 may include a first calibration circuit 93a and a second calibration circuit 93b; the first calibration circuit 93a is used to output a first data signal to the register 92, and the second calibration circuit 93b is used to output a second data signal to the register 92. With the above configuration, the register 92 can store the first data signal and the second data signal.

[0114] Register 92 is used to receive a first control signal and output a first data signal to voltage generation circuit 91; voltage generation circuit 91 is used to output a first bias voltage signal to first power transistor M1 when register 92 receives the first control signal. Register 92 is also used to receive a second control signal and output a second data signal to voltage generation circuit 91; voltage generation circuit 91 is also used to output a second bias voltage signal to second power transistor M2 when register 92 receives the second control signal.

[0115] At the first moment, power supply circuit 80 supplies power to the first power amplifier circuit PA1 through switching circuit 901, and does not supply power to the second power amplifier circuit PA2 through switching circuit 901. For example, the first switch VA1 is closed, and the second switch VA2 is open. At this time, the processor outputs a first control signal to register 92 through the input interface of controller 90. Register 92 outputs a first data signal to voltage generation circuit 91, so that voltage generation circuit 91 calibrates the output bias voltage signal and outputs the calibrated first bias voltage signal to the first power transistor M1. The first power amplifier circuit PA1 amplifies the power of the signal in the first frequency band.

[0116] At the second moment, power supply circuit 80 supplies power to the second power amplifier circuit PA2 through switching circuit 901, while power supply circuit 80 does not supply power to the first power amplifier circuit PA1 through switching circuit 901. For example, the second switch VA2 is closed, and the first switch VA1 is open. At this time, the processor outputs a second control signal to register 92 through the input interface of controller 90. Register 92 outputs a second data signal to voltage generation circuit 91, so that voltage generation circuit 91 calibrates the output bias voltage signal and outputs the calibrated second bias voltage signal to the second power transistor M2. The second power amplifier circuit PA2 amplifies the power of the signal in the second frequency band.

[0117] With the above settings, the same voltage generation circuit 91 can support the calibration of the gate bias voltage of multiple power transistors in different frequency bands.

[0118] In some embodiments, as shown in FIG7, the number of first power transistors M1 can be multiple, and the multiple first power transistors M1 can be coupled in series. For example, the first power amplifier circuit PA1 can be a multi-stage power amplifier. The number of second power transistors M2 can be multiple, and the multiple second power transistors M2 can be coupled in series. For example, the second power amplifier circuit PA2 can be a multi-stage power amplifier. The multi-frequency power amplifier 30 in this embodiment is also a multi-frequency multi-stage power amplifier.

[0119] For example, the drains of multiple first power transistors M1 can be coupled to the power supply circuit 80 through the first switch VA1, and the drains of multiple second power transistors M2 can be coupled to the power supply circuit 80 through the second switch VA2.

[0120] Correspondingly, there can be multiple voltage generation circuits 91, with one voltage generation circuit 91 coupled to the gate of a first power transistor M1 and the gate of a second power transistor M2.

[0121] The controller 90 may include multiple gate voltage output ports VG, and multiple voltage generation circuits 91 may be coupled one-to-one with each of the multiple gate voltage output ports VG. For example, Figure 7 may include three voltage generation circuits 91 and three gate voltage output ports VG. Specifically, the first voltage generation circuit 91a is coupled to the first gate voltage output port VG1, the second voltage generation circuit 91b is coupled to the second gate voltage output port VG2, and the third voltage generation circuit 91c is coupled to the third gate voltage output port VG3. The number of voltage generation circuits 91 may be equal to the number of gate voltage output ports VG; that is, the number of voltage generation circuits 91 can be determined based on the number of gate voltage output ports VG.

[0122] Here, the number of multiple voltage generation circuits 91 can be equal to the number of multiple gate voltage output ports VG, meaning the number of mutually coupled voltage generation circuits 91 and gate voltage output ports VG can be the same. In some embodiments, other voltage generation circuits 91 or gate voltage output ports VG may also exist in the RF transmitting circuit or RF front-end module. For example, the first power amplifier circuit PA1 includes three stages of first power transistors M1, and the second power amplifier circuit PA2 includes three stages of second power transistors M2. Correspondingly, the number of voltage generation circuits 91 can also be three. The first voltage generation circuit 91a is coupled to the first power transistor M11 and the second power transistor M21 of the first stage through the gate voltage output port VG1 of the controller 90, the second voltage generation circuit 91b is coupled to the first power transistor M12 and the second power transistor M22 of the second stage through the gate voltage output port VG2 of the controller 90, and the third voltage generation circuit 91c is coupled to the first power transistor M13 and the second power transistor M23 of the third stage through the gate voltage output port VG3 of the controller 90.

[0123] At the first moment, power supply circuit 80 supplies power to the multiple first power transistors M1 of the first power amplifier circuit PA1, but does not supply power to the second power amplifier circuit PA2. For example, the first switch VA1 is closed, and the second switch VA2 is open. The first voltage generation circuit 91a outputs a first bias voltage signal to the gate of the first power transistor M11 in the first stage, the second voltage generation circuit 91b outputs a first bias voltage signal to the gate of the first power transistor M12 in the second stage, and the third voltage generation circuit 91c outputs a first bias voltage signal to the gate of the first power transistor M13 in the third stage. Through the above settings, the first power amplifier circuit PA1 is turned on, so that the first power amplifier circuit PA1 amplifies the power of the radio frequency signal in the first frequency band.

[0124] At the second moment, power supply circuit 80 supplies power to multiple second power transistors M2 of the second power amplifier circuit PA2, but does not supply power to the first power amplifier circuit PA1. For example, the first switch VA1 is open, and the second switch VA2 is closed. The first voltage generation circuit 91a outputs a second bias voltage signal to the gate of the first-stage second power transistor M21, the second voltage generation circuit 91b outputs a second bias voltage signal to the gate of the second-stage second power transistor M22, and the third voltage generation circuit 91c outputs a second bias voltage signal to the gate of the third-stage second power transistor M23. Through the above settings, the second power amplifier circuit PA2 is turned on, thereby amplifying the power of the radio frequency signal in the second frequency band.

[0125] With the above configuration, multiple voltage generation circuits 91 can support multi-stage power amplifier circuits of different frequency bands to operate in the corresponding frequency bands.

[0126] In this embodiment, the number of voltage generation circuits 91 is the same as the number of first power transistors M1. Alternatively, in this embodiment, the number of voltage generation circuits 91 can be the same as the number of second power transistors M2. It can be understood that, as shown in Figure 4, in related technologies, the number of voltage generation circuits 91 can be equal to the sum of the number of first power transistors M1 and the number of second power transistors M2. This configuration helps reduce the number of devices within the RF transmitting circuit TX, thereby reducing the module area occupied by the RF transmitting circuit TX.

[0127] Here, the number of voltage generation circuits 91 can be equal to the number of first power transistors M1, meaning the number of mutually coupled voltage generation circuits 91 and first power transistors M1 is the same. In some embodiments, other voltage generation circuits 91 or first power transistors M1 may also exist in the RF transmitting circuit or RF front-end module. Similarly, the number of voltage generation circuits 91 can be equal to the number of second power transistors M2, meaning the number of mutually coupled voltage generation circuits 91 and second power transistors M2 is the same. In some embodiments, other voltage generation circuits 91 or second power transistors M2 may also exist in the RF transmitting circuit or RF front-end module.

[0128] Furthermore, the number of registers 92 can also be multiple. Multiple voltage generating circuits 91 are coupled one-to-one with multiple registers 92; that is, each voltage generating circuit 91 is provided with one register 92. Correspondingly, the number of calibration modules composed of multiple parallel-coupled calibration circuits 93 can also be multiple. Multiple calibration modules are coupled one-to-one with multiple voltage generating circuits 91; that is, each voltage generating circuit 91 is provided with a set of calibration modules, or multiple parallel-coupled calibration circuits 93 for each voltage generating circuit 91.

[0129] For example, the first power amplifier circuit PA1 includes three stages of first power transistors M1, and the second power amplifier circuit PA2 includes three stages of second power transistors M2. Correspondingly, the number of voltage generation circuits 91 can also be three.

[0130] At the first moment, power supply circuit 80 supplies power to the first power amplifier circuit PA1, but does not supply power to the second power amplifier circuit PA2. For example, the first switch VA1 is closed, and the second switch VA2 is open. At this time, the processor outputs a first control signal to the first register 92a through the input interface of the controller 90. The first register 92a outputs a first data signal to the first voltage generation circuit 91a, so that the first voltage generation circuit 91a calibrates the output bias voltage signal and outputs the calibrated first bias voltage signal to the first power transistor M11 of the first stage. Similarly, the input interface of controller 90 outputs a first control signal to the second register 92b, which in turn outputs a first data signal to the second voltage generation circuit 91b. This allows the second voltage generation circuit 91b to calibrate the output bias voltage signal and output the calibrated first bias voltage signal to the first power transistor M12 of the second stage. The input interface of controller 90 also outputs a first control signal to the third register 92c, which in turn outputs a first data signal to the third voltage generation circuit 91c. This allows the third voltage generation circuit 91c to calibrate the output bias voltage signal and output the calibrated first bias voltage signal to the first power transistor M13 of the third stage. This configuration enables multiple voltage generation circuits 91 to support the calibration of the gate bias voltage of multiple stages of the first power transistor M1.

[0131] At the second moment, power supply circuit 80 supplies power to the second power amplifier circuit PA2, but does not supply power to the first power amplifier circuit PA1. For example, the first switch VA1 is open, and the second switch VA2 is closed. At this time, the processor outputs a second control signal to the first register 92 through the input interface of the controller 90. The first register 92a outputs the second data signal to the first voltage generation circuit 91a, so that the first voltage generation circuit 91a calibrates the output bias voltage signal and outputs the calibrated second bias voltage signal to the second power transistor M21 of the first stage. Similarly, the input interface of controller 90 outputs a second control signal to the second register 92b, which in turn outputs a second data signal to the second voltage generation circuit 91b. This allows the second voltage generation circuit 91b to calibrate the output bias voltage signal and output the calibrated second bias voltage signal to the second power transistor M22 in the second stage. The input interface of controller 90 also outputs a second control signal to the third register 92c, which in turn outputs a second data signal to the third voltage generation circuit 91c. This allows the third voltage generation circuit 91 to calibrate the output bias voltage signal and output the calibrated second bias voltage signal to the second power transistor M23 in the third stage. This configuration enables multiple voltage generation circuits 91 to support the calibration of the gate bias voltage of multiple stages of second power transistors M2.

[0132] Of course, in some other embodiments, referring to Figure 8, the number of power amplifier circuits can be n, and each power amplifier circuit can include m series-coupled power transistors. Here, n can be a positive integer greater than or equal to 1, and m can be a positive integer greater than or equal to 1.

[0133] Accordingly, the number of switching circuits 901 can be n, and each switching circuit 901 is coupled to a power amplifier circuit in a one-to-one correspondence. The number of voltage generation circuits 91 can be n, and each voltage generation circuit 91 is coupled to a power transistor of the same stage in the power amplifier circuit in a one-to-one correspondence. The number of calibration circuits 93 coupled to each voltage generation circuit 91 can be m, and the calibration circuits 93 can calibrate the gate bias voltage of the power amplifier circuit in a one-to-one correspondence.

[0134] In summary, the radio frequency transmitting circuit TX provided in this application embodiment helps to reduce the number of voltage generating circuits 91, the number of peripheral power supply circuits 80, and the area occupied by the module, thereby helping to reduce the cost of the module.

[0135] Figure 9 is a timing diagram of a transmitting and receiving switching scenario of an RF transmitting circuit TX provided in an embodiment of this application; Figure 10 is a timing diagram of a resetting scenario of an RF transmitting circuit TX provided in an embodiment of this application.

[0136] Wherein, VBATT represents the voltage signal received at the first power input port, VIO represents the voltage signal received at the second power input port, MIPI represents the voltage control signal received at the input port of controller 90, PABias represents the bias voltage signal output by voltage generation circuit 91, and PAVCC represents the power supply voltage signal output by power supply circuit 80.

[0137] Referring to Figure 9, when the MIPI outputs a voltage generation command, the bias voltage of PABias drops from 0V to -xV. The MIPI outputs a PA-ON command, increasing the supply voltage of PAVCC from 0V to xV. Then, the MIPI outputs a BIAS-ON command, raising the bias voltage of PABias from -xV to the operating voltage, thus powering on the RF transmitter circuit TX. The MIPI outputs an MPM / LPM command, switching the RF transmitter circuit TX to a low-frequency output mode (e.g., Low-power mode). The MIPI outputs an MPM / HPM command, switching the RF transmitter circuit TX to a high-frequency output mode (e.g., High-power mode). The MIPI outputs a PA-OFF command, lowering the supply voltage of PAVCC from xV to 0V. Then, the MIPI outputs a BIAS-OFF command, lowering the bias voltage of PABias from the operating voltage to -xV, thus powering off the RF transmitter circuit TX.

[0138] Referring to Figure 10, the difference from the previous figure is that MIPI outputs a Reset command, and the bias voltage of PABias changes from -xV to 0V, so as to reset the RF transmitter circuit TX.

[0139] With the above settings, the timing of the voltage generation circuit 91 and the power supply circuit 80 is transmitted serially, which helps to improve the reliability of the RF transmitting circuit TX during operation.

[0140] In some embodiments, this application also provides an integrated circuit chip. The integrated circuit chip includes a packaging layer and the controller 90 described in the above embodiments, with the packaging layer covering the controller 90. The controller 90 includes a voltage generation circuit 91, a register 92, and multiple calibration circuits 93. The interface of the controller 90 is used to receive external signals. The register 92 is coupled between the interface of the controller 90 and the voltage generation circuit 91. The multiple calibration circuits 93 are coupled between the interface of the controller 90 and the register 92, and the multiple calibration circuits 93 are connected in parallel. The controller 90 also includes a power switch circuit 901, which is coupled to the interface of the controller 90. The voltage generation circuit 91, the controller 90, and the multiple calibration circuits 93 can be as described in the above embodiments, and will not be repeated here.

[0141] Other functional devices can also be integrated into an integrated circuit chip; for example, the integrated circuit chip can be a power amplifier controller 90. Of course, the embodiments of this application are not limited in this respect, and the above is only an illustration.

[0142] In some embodiments, referring to FIG11, this application embodiment also provides a radio frequency transmitting circuit TX. The radio frequency transmitting circuit TX includes multiple power amplifier circuits and a power supply circuit 80. The multiple power amplifier circuits include a first power amplifier circuit PA1 and a second power amplifier circuit PA2. The first power amplifier circuit PA1 includes a first power transistor M1, and the power supply circuit 80 is switchably coupled to the drain of the first power transistor M1. The second power amplifier circuit PA2 includes a second power transistor M2, and the power supply circuit 80 is switchably coupled to the second power transistor M2. The power supply circuit 80 is used to supply power to the first power transistor M1 at a first moment; the power supply circuit 80 is also used to supply power to the second power transistor M2 at a second moment. The first power amplifier circuit PA1 is used to process signals in a first frequency band, and the second power amplifier circuit PA2 is used to process signals in a second frequency band.

[0143] The above configuration allows the same power supply circuit 80 to supply power to different power amplifier circuits in a time-sharing manner, thereby enabling switching between the first power amplifier circuit PA1 and the second power amplifier circuit PA2 for operation in both the first and second frequency bands. Furthermore, this reduces the number of power supply circuits 80, which in turn reduces the number of components surrounding the RF transmitter circuit TX, and consequently reduces the footprint of the peripheral modules.

[0144] Further, the radio frequency transmitting circuit TX may include a voltage generating circuit 91. In some embodiments, referring to FIG5, the same voltage generating circuit 91 may be coupled to the gate of the first power transistor M1 and the gate of the second power transistor M2, respectively. Alternatively, in some other embodiments, referring to FIG11, one voltage generating circuit 91 is coupled to the gate of the first power transistor M1, and another voltage generating circuit 91 is coupled to the gate of the second power transistor M2.

[0145] In some embodiments, this application also provides a communication device. The communication device may include a power supply battery 99 and a radio frequency transmitting circuit TX as described in the above embodiments, wherein the power supply circuit 80 of the radio frequency transmitting circuit TX may be coupled to the power supply battery 99.

[0146] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A radio frequency transmitting circuit, characterized in that, It includes multiple power amplifier circuits and a voltage generation circuit. The multiple power amplifier circuits include a first power amplifier circuit and a second power amplifier circuit. The first power amplifier circuit includes a first power transistor, and the second power amplifier circuit includes a second power transistor. The voltage generation circuit is coupled to the gate of the first power transistor and the gate of the second power transistor, respectively. The first power amplifier circuit is used to process signals in the first frequency band; The second power amplifier circuit is used to process signals in the second frequency band.

2. The radio frequency transmitting circuit according to claim 1, characterized in that, The first power amplifier circuit includes a plurality of first power transistors coupled in series, and the second power amplifier circuit includes a plurality of second power transistors coupled in series. The number of voltage generating circuits is multiple, and each voltage generating circuit is coupled to a first power transistor and a second power transistor.

3. The radio frequency transmitting circuit according to claim 2, characterized in that, The number of voltage generating circuits is the same as the number of the first power transistors; and / or, the number of voltage generating circuits is the same as the number of the second power transistors.

4. The radio frequency transmitting circuit according to any one of claims 1-3, characterized in that, The voltage generating circuit is used to output a first bias voltage signal to the first power transistor; The voltage generation circuit is also used to output a second bias voltage signal to the second power transistor.

5. The radio frequency transmitting circuit according to any one of claims 1-4, characterized in that, The radio frequency transmitting circuit includes a controller, which includes the voltage generating circuit. The controller also includes a register and multiple calibration circuits. The controller's interface is used to receive external signals. The register is coupled between the controller's interface and the voltage generating circuit. The multiple calibration circuits are coupled between the controller's interface and the register, and the multiple calibration circuits are coupled in parallel.

6. The radio frequency transmitting circuit according to claim 5, characterized in that, The plurality of calibration circuits includes a first calibration circuit and a second calibration circuit; the first calibration circuit is used to output a first data signal to the register, and the second calibration circuit is used to output a second data signal to the register; The register is used to receive a first control signal and output the first data signal to the voltage generating circuit; the voltage generating circuit is used to output a first bias voltage signal to the first power transistor when the register receives the first control signal. The register is also used to receive a second control signal and output the second data signal to the voltage generating circuit; the voltage generating circuit is also used to output a second bias voltage signal to the second power transistor when the register receives the second control signal.

7. The radio frequency transmitting circuit according to claim 5 or 6, characterized in that, The number of the plurality of calibration circuits is equal to the number of the plurality of power amplifier circuits.

8. The radio frequency transmitting circuit according to any one of claims 1-7, characterized in that, It also includes a power supply circuit, which is switchably coupled to the drain of the first power transistor and the drain of the second power transistor. The power supply circuit is used to supply power to the first power transistor at a first moment; the power supply circuit is also used to supply power to the second power transistor at a second moment.

9. The radio frequency transmitting circuit according to claim 8, characterized in that, The radio frequency transmitting circuit includes a controller, the controller includes the voltage generating circuit, and the controller also includes a switching circuit; The power supply circuit is coupled to the first power transistor through the switching circuit, and the power supply circuit is coupled to the second power transistor through the switching circuit.

10. The radio frequency transmitting circuit according to claim 9, characterized in that, The switching circuit and the voltage generation circuit are CMOS devices.

11. The radio frequency transmitting circuit according to claim 9 or 10, characterized in that, The multiple power amplifier circuits are HEMT devices.

12. The radio frequency transmitting circuit according to any one of claims 1-11, characterized in that, The semiconductor materials of the first power transistor and the second power transistor include gallium nitride.

13. A radio frequency front-end module, characterized in that, Includes the radio frequency transmitting circuit according to any one of claims 1-12.

14. The radio frequency front-end module according to claim 13, characterized in that, The radio frequency front-end module also includes a radio frequency receiving circuit and a radio frequency switching circuit; the radio frequency switching circuit is used to switch coupling with the radio frequency transmitting circuit or the radio frequency receiving circuit.

15. An integrated circuit chip, characterized in that, Includes an encapsulation layer and a controller, wherein the encapsulation layer covers the controller; The controller includes the voltage generation circuit, a register, and multiple calibration circuits. The controller's interface is used to receive external signals. The register is coupled between the controller's interface and the voltage generation circuit. The multiple calibration circuits are coupled between the controller's interface and the register, and the multiple calibration circuits are connected in parallel. The controller also includes a power switch circuit, which is coupled to the interface of the controller.

16. A communication device, characterized in that, It also includes a communication chip, at least one feed radiator, and a radio frequency transmitting circuit as described in any one of claims 1-12, wherein the communication chip is coupled to the plurality of power amplifier circuits; Both the first power amplifier circuit and the second power amplifier circuit are coupled to the same feed radiator; or, The first power amplifier circuit is coupled to one of the feed radiators, and the second power amplifier circuit is coupled to the other feed radiator.

17. A radio frequency transmitting circuit, characterized in that, It includes multiple power amplifier circuits and a power supply circuit. The multiple power amplifier circuits include a first power amplifier circuit and a second power amplifier circuit. The first power amplifier circuit includes a first power transistor, and the power supply circuit is selectively coupled to the drain of the first power transistor. The second power amplifier circuit includes a second power transistor, and the power supply circuit is selectively coupled to the second power transistor. The power supply circuit is used to supply power to the first power transistor at a first moment; the power supply circuit is also used to supply power to the second power transistor at a second moment; The first power amplifier circuit is used to process signals in the first frequency band, and the second power amplifier circuit is used to process signals in the second frequency band.

18. The radio frequency transmitting circuit according to claim 17, characterized in that, The power supply circuit is coupled to the first power transistor via a switching circuit, and the power supply circuit is coupled to the second power transistor via the switching circuit; the switching circuit is a power switching circuit.

19. A communication device, characterized in that, It also includes a power supply battery and a radio frequency transmitting circuit as described in claim 17 or 18, wherein the power supply circuit of the radio frequency transmitting circuit is coupled to the power supply battery.

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