Wafer carrying apparatus and temperature control method therefor, and semiconductor process device

Abstract

The present application discloses a wafer carrying apparatus and a temperature control method therefor, and a semiconductor process device. The wafer carrying apparatus comprises: a heating assembly comprising a heater body, the heater body comprising an inner heating region and an outer heating region, the outer heating region being located outside the inner heating region in the radial direction, inner region heating components and an inner region temperature measurement component being arranged in the inner heating region, and outer region heating components and an outer region temperature measurement component being arranged in the outer heating region; and a water-cooling plate, the edge of which is provided with an annular protrusion structure, the water-cooling plate being sealingly connected to the heater body by means of the annular protrusion structure, the radial width and height of the annular protrusion structure being set on the basis of an operating-condition temperature required by the wafer carrying apparatus, the region in the annular protrusion structure being an inner cooling region, the region where the annular protrusion structure is located being an outer cooling region, and a gap being formed between the water-cooling plate and the heater body in the inner cooling region. The present application has a relatively strong cooling capability in both a high-temperature operating condition and a low-temperature operating condition, and can be applied to both the high-temperature operating condition and the low-temperature operating condition.

Description

Wafer carrier device and its temperature control method and semiconductor process equipment Technical Field

[0001] This application belongs to the field of semiconductor technology, and in particular relates to a wafer carrier device, its temperature control method, and semiconductor process equipment. Background Technology

[0002] In the high-temperature process of Physical Vapor Deposition (PVD), heating components in the wafer carrier are required to heat the wafer to a specific process temperature. This process generates a significant amount of heat, which can interfere with the wafer carrier. If the wafer carrier's cooling capacity is insufficient, it will passively heat up under the influence of this process heat. Therefore, the wafer carrier needs to possess strong cooling capabilities. However, the cooling capacity of the wafer carrier varies at different temperatures, making it difficult for a single wafer carrier to meet both high-temperature and low-temperature process requirements.

[0003] For example, if a suspended water-cooling structure is used, there is no contact between the water-cooling plate and the heater body. Heat exchange between the heater body and the water-cooling plate is achieved through air heat conduction and radiation. This can provide strong cooling capacity under high-temperature conditions, but the air heat conduction and radiation heat exchange capacity is poor under low-temperature conditions, resulting in low cooling capacity. It cannot simultaneously meet both high and low temperature requirements. Other contact-type water-cooling structures, on the other hand, suffer from problems such as poor temperature uniformity and fixed, non-adjustable cooling capacity. Summary of the Invention

[0004] The purpose of this application is to provide a wafer carrier device, its temperature control method, and semiconductor process equipment to at least solve one of the technical problems in the prior art.

[0005] To achieve the above objectives, the embodiments of this application adopt the following technical solutions:

[0006] In a first aspect, embodiments of this application provide a wafer carrier device, comprising: a heating assembly, the heating assembly including a heater body, the heater body including an inner heating zone and an outer heating zone, the outer heating zone being located outside the radial direction of the inner heating zone, the inner heating zone being provided with an inner heating component and an inner temperature measuring component, and the outer heating zone being provided with an outer heating component and an outer temperature measuring component; a water-cooling plate, the edge of the water-cooling plate being provided with an annular protrusion structure, the water-cooling plate being sealed to the heater body through the annular protrusion structure, the width and height of the annular protrusion structure being set according to the required operating temperature of the wafer carrier device, the area within the annular protrusion structure being an inner cooling zone, the area where the annular protrusion structure is located being an outer cooling zone, and a gap being present between the water-cooling plate and the heater body in the inner cooling zone.

[0007] Secondly, embodiments of this application provide a temperature control method for a wafer carrier device, applied in the wafer carrier device as described in the first aspect. The method includes: acquiring a target temperature of the wafer carrier device; acquiring in real time the actual internal temperature measured by an internal temperature measuring component and the actual external temperature measured by an external temperature measuring component, and adjusting the target external temperature, the internal heating power of the internal heating component, and the external heating power of the external heating component based on the actual internal temperature, the actual external temperature, and the target temperature of the wafer carrier device.

[0008] Thirdly, embodiments of this application provide a semiconductor process apparatus, including: a process chamber, a temperature controller, and a wafer carrier, wherein the temperature controller includes at least one processor and at least one memory, the memory storing a computer program, and the computer program, when executed by the processor, implements the steps of the method described in the second aspect of this application.

[0009] The above-described technical solutions adopted in the embodiments of this application can achieve the following beneficial effects:

[0010] In this embodiment, the wafer carrier includes a heating assembly and a water-cooled plate. The heating assembly includes a heater body, which includes an inner heating zone and an outer heating zone. The outer heating zone is located outside the radial direction of the inner heating zone. The inner heating zone is provided with an inner heating component and an inner temperature measuring component, and the outer heating zone is provided with an outer heating component and an outer temperature measuring component. The edge of the water-cooled plate is provided with an annular protrusion structure. The water-cooled plate is sealed to the heater body through the annular protrusion structure. The radial width and height of the annular protrusion structure are set according to the required operating temperature of the wafer carrier. The area inside the annular protrusion structure is the inner cooling zone, and the area where the annular protrusion structure is located is the outer cooling zone. There is a gap between the inner cooling zone and the heater body. This embodiment divides the cooling method of the heater body by the water-cooled plate into inner and outer zones. The outer cooling zone uses solid heat conduction, while the inner cooling zone uses air heat conduction and thermal radiation. The cooling capacity of the inner and outer zones is adjusted by regulating the width and height of the annular protrusion structure of the water-cooled plate. These two cooling methods provide strong cooling capacity under both high-temperature and low-temperature conditions, simultaneously addressing both conditions. In addition, an inner heating zone and an outer heating zone are set up, corresponding to the inner and outer cooling zones respectively. By adjusting the target heating temperature of the two heating zones, the direction of process heat flow can be adjusted in real time, achieving online adjustable cooling capacity to meet the needs of various operating conditions. Attached Figure Description

[0011] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0012] Figure 1 is a schematic diagram of the structure of a wafer carrier device in related technologies;

[0013] Figure 2 is a schematic diagram of a wafer carrier device provided in an embodiment of this application;

[0014] Figure 3 is a schematic diagram of the width of the annular protrusion structure provided in an embodiment of this application;

[0015] Figure 4 is a schematic diagram of the height of the annular protrusion structure provided in one embodiment of this application;

[0016] Figure 5 is a schematic diagram of the inner and outer cooling zones of a water-cooled plate provided in an embodiment of this application;

[0017] Figure 6 is a schematic flowchart of a temperature control method for a wafer carrier device according to an embodiment of this application;

[0018] Figure 7 is a schematic flowchart of a temperature control method for a wafer carrier device according to another embodiment of this application;

[0019] Figure 8 is a schematic diagram of the heat flow direction of the wafer carrier device when Ti > To according to an embodiment of this application;

[0020] Figure 9 is a schematic diagram of the heat flow direction of the wafer carrier device when Ti < To, according to an embodiment of this application;

[0021] Figure 10 is a schematic flowchart of a temperature control method for a wafer carrier device provided in another embodiment of this application. Detailed Implementation

[0022] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0023] The terms "first," "second," etc., used in this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein. Furthermore, "and / or" in this application indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship. It should be noted that all data involved in this application was obtained with the user's authorization.

[0024] The technical solutions provided by the various embodiments of this application are described in detail below with reference to the accompanying drawings.

[0025] In related technologies, as shown in Figure 1, the wafer carrier adopts a suspended water-cooled structure, including a heater body 1, a water-cooled plate 2, and a mounting spindle 3. The heater body 1 contains heating tubes 4 and thermocouples 5. The water-cooled plate 2 contains cooling water channels 6 and inlet / outlet water pipes 7. The wafer carrier is mounted into a process chamber 8 via the mounting spindle 3. The heating tubes 4 and thermocouples 5 are connected to a heating power source 9 outside the process chamber 8. The cooling water channels 6 are connected to a cooling system 10 outside the process chamber 8 via the inlet / outlet water pipes 7. The cooling system 10 provides coolant (e.g., water) to the water-cooled plate 2. The heater body 1 is used to support the wafer 11. There is no contact between the water-cooled plate 2 and the heater body 1; heat exchange between them is achieved through air heat conduction and heat radiation. The cooling capacity of the water-cooled plate 2 on the heater body 1 is adjusted by regulating the distance between the water-cooled plate 2 and the heater body 1 and by increasing the area of ​​the water-cooled plate 2. Since the water-cooled plate 2 and the heater body 1 exchange heat only through air heat conduction and heat radiation, it has a strong cooling capacity under high temperature conditions. However, under low temperature conditions, the air heat conduction and heat radiation heat exchange capacity is poor, and the cooling capacity is weak, so it cannot simultaneously meet both high and low temperature conditions.

[0026] Figure 2 is a schematic diagram of a wafer carrier device provided in an embodiment of this application. As shown in Figure 2, the wafer carrier device provided in this embodiment of the application may specifically include: a heating assembly and a water-cooled plate 2, wherein: the heating assembly includes a heater body 1, the heater body 1 includes an inner heating zone and an outer heating zone, the outer heating zone is located outside the radial direction of the inner heating zone, the inner heating zone is provided with an inner zone heating component 12 and an inner zone temperature measuring component 13, and the outer heating zone is provided with an outer zone heating component 14 and an outer zone temperature measuring component 15.

[0027] The edge of the water cooling plate 2 is provided with an annular protrusion structure 16. The water cooling plate 2 is sealed to the heater body 1 through the annular protrusion structure 16. The width and height of the annular protrusion structure 16 are set according to the operating temperature required by the wafer carrier device. The area inside the annular protrusion structure 16 is the inner cooling area, and the area where the annular protrusion structure 16 is located is the outer cooling area. There is a gap between the water cooling plate 2 and the heater body 1 in the inner cooling area.

[0028] The wafer carrier device provided in this application embodiment may further include: a mounting spindle 3. The mounting spindle 3 is connected to the lower wall of the process chamber 8 and the water cooling plate 2 respectively, and is used to support the heater body 1 and the water cooling plate 2.

[0029] The heater body 1 can be made of metal, such as stainless steel or aluminum alloy. The heater body 1 contains a heating element and a temperature measuring element.

[0030] The heating components are divided into an inner heating component 12 and an outer heating component 14, which can be heating tubes, etc. The arrangement of the heating components can be set according to actual needs, and this application embodiment does not impose too many restrictions on this.

[0031] The area affected by the heating of the inner heating element 12 is called the inner heating zone, and the area affected by the heating of the outer heating element 14 is called the outer heating zone. The main function of the inner heating element 12 is to heat the heater body 1, and thus the wafer 11 carried on the heater body 1. To ensure the temperature uniformity of the wafer 11, the size of the inner heating zone in the heater body 1 needs to be set larger than the maximum size of the wafer 11 that needs to be carried on the heater body 1. The main function of the outer heating element 14 is to counteract the cooling capacity of the outer ring of the water cooling plate 2 on the heater body 1. The inner heating element 12 and the outer heating element 14 are respectively connected to the heating power supply 9 outside the process chamber 8 via power lines.

[0032] The temperature measuring components are also divided into an inner zone temperature measuring component 13 and an outer zone temperature measuring component 15, which can be thermocouples, temperature sensors, etc. The inner zone temperature measuring component 13 is used to measure the actual temperature of the inner heating zone, i.e., the actual temperature of the inner zone, and the outer zone temperature measuring component 15 is used to measure the actual temperature of the outer heating zone, i.e., the actual temperature of the outer zone.

[0033] The function of the heater body 1 is to transfer heat to the wafer 11. The heating power supply 9 supplies power to the inner heating component 12 and the outer heating component 14. The inner heating component 12 and the outer heating component 14 (e.g., the resistance of the heating tube) generate heat, heating the heater body 1 to the set target temperature.

[0034] The water-cooled plate 2 can be made of the same material as the heater body 1. The water-cooled plate 2 has internal cooling channels 6 for introducing coolant (e.g., water). Two inlet and outlet pipes 7 are installed on the water-cooled plate 2, one for inlet and the other for outlet. The cooling channels 6 are connected to the cooling system 10 outside the process chamber 8 via the inlet and outlet pipes 7. The cooling system 10 provides coolant to the water-cooled plate 2. The outermost ring of the water-cooled plate 2 has an annular protrusion structure 16 with a radial width of ΔX (as shown in Figure 3) and a height of Δd (as shown in Figure 4). The water-cooled plate 2 is sealed to the heater body 1 via the annular protrusion structure 16, specifically by welding, such as fusion welding, brazing, or diffusion welding. The annular protrusion structure 16 and the outer heating element 14 can at least partially overlap in the radial direction of the water-cooled plate 2.

[0035] As shown in Figure 5, the water-cooled plate 2 is divided into an inner cooling zone and an outer cooling zone. The area where the annular protrusion structure 16 is located is the outer cooling zone, and the area within the annular protrusion structure 16 is the inner cooling zone. The water-cooled plate 2 is spaced apart from the heater body 1 in the inner cooling zone, meaning there is a gap between the water-cooled plate 2 and the heater body 1 in the inner cooling zone. The water-cooled plate 2 is sealed to the heater body 1 in the outer cooling zone to close the aforementioned gap, thus forming an isolation cavity between the cooling plate 2 and the heater body 1. Therefore, the cooling method in the outer cooling zone is solid-state heat conduction, while the cooling method in the inner cooling zone is air heat conduction and thermal radiation.

[0036] It should be noted that, vertically, the outer heating element 14 can be closer to the water-cooling pan 2 than the inner heating element 12. This is because the main function of the inner heating element 12 is to heat the heater body 1, and thus the wafer 11 carried on the heater body 1, so it is closer to the wafer 11 than the outer heating element 14. The main function of the outer heating element 14 is to counteract the cooling effect of the water-cooling pan 2 on the heater body 1 in the outer cooling zone, therefore it is closer to the water-cooling pan 2 than the inner heating element 12.

[0037] The cooling capacity of the water-cooling plate 2 can be adjusted by regulating the radial width ΔX and height Δd of the annular protrusion structure 16. The specific principle is as follows:

[0038] The heat conduction formula is as follows:

[0039] Where Q is the heat transfer flow rate, λ is the thermal conductivity, A is the area of ​​the water-cooled plate 2, T1 is the temperature of the heater body 1, T2 is the temperature of the water-cooled plate 2, and Δd is the heat transfer distance between the heater body 1 and the water-cooled plate 2.

[0040] As can be seen from the above formula (1), the cooling capacity of the water-cooled plate 2 on the heater body 1 is related to the temperature T1 of the heater body 1, the temperature T2 of the water-cooled plate 2, the thermal conductivity λ, the area A of the water-cooled plate 2, and the heat transfer distance Δd between the heater body 1 and the water-cooled plate 2. The temperature T1 of the heater body 1 is determined according to the process requirements. The temperature T2 of the water-cooled plate 2 is equivalent to the temperature of the coolant and can be regarded as a constant value. When T1 and T2 are determined, the cooling capacity of the water-cooled plate 2 on the heater body 1 can be changed by changing λ, A, and Δd. When A and Δd are determined, the larger the value of λ, the stronger the cooling capacity of the water-cooled plate 2 on the heater body 1. The area A of the water-cooled plate 2 can be divided into the contact area A1 and the non-contact area A2, A = A1 + A2. The thermal conductivity λ at the contact area A1 is the solid thermal conductivity λ1, and the thermal conductivity λ at the non-contact area A2 is the gas thermal conductivity λ2. λ1 >> λ2, so different cooling effects can be obtained by adjusting the ratio of A1 and A2.

[0041] As can be seen from the above, the thermal conductivity λ in the heat conduction formula (1) is an important parameter that determines the heat conduction capacity. The thermal conductivity λ is determined by the heat transfer medium. The thermal conductivity λ of stainless steel is 17 W / (m·K), and the thermal conductivity λ of air is 0.01~0.04 W / (m·K). Under the same conditions, the heat conduction capacity of solid is much greater than that of air. In low-temperature conditions, to enhance the cooling capacity of the water-cooled plate 2, it is necessary to achieve this through solid heat conduction. However, if the solid heat conduction cooling area is too large, it will lead to excessive cooling capacity under high-temperature conditions, causing the wafer carrier device to be unable to heat to the target temperature. Therefore, in this embodiment, the area ratio of the outer cooling area and the inner cooling area can be allocated by controlling the radial width ΔX of the annular protrusion structure 16 of the water-cooled plate 2. The area ratio of the outer cooling area is small, and the area ratio of the inner cooling area is large. In addition, the heat transfer distance Δd between the heater body 1 and the water cooling plate 2 in the heat conduction formula (1) is another important parameter that determines the heat conduction capacity. The smaller Δd is, the greater the heat conduction capacity. Therefore, in this embodiment, the cooling capacity of the inner cooling zone can be adjusted by controlling the height Δd of the annular protrusion structure 16 of the water cooling plate 2.

[0042] Furthermore, the wafer carrier device in this embodiment may further include: a temperature controller (not shown in FIG2) disposed within the heating power supply 9, the temperature controller being used to measure the actual internal temperature T measured by the internal temperature measuring component 13. 内实际 The actual temperature T of the outer zone measured by the outer zone temperature measuring component 15. 外实际 and the target temperature T of the wafer carrier device 目标 Target temperature T in the external area 外目标 (Generally denoted as To), the inner zone heating power P of the inner zone heating component 12 内The external heating power P of the external heating component 14 外 At least one of the components is adjusted to achieve online adjustment of cooling capacity to meet the needs of various operating conditions. The specific temperature control process of the wafer carrier device can be found in the relevant descriptions in the following method embodiments, and will not be repeated here.

[0043] It should be noted here that when designing the wafer carrier device, the heating component with the appropriate heating capacity must be selected according to the required operating conditions. Specifically, the maximum internal heating power (maxP) of the internal heating component 12 should be set. 内 The first set multiple N1 is set to the actual cooling power of the inner cooling zone corresponding to the maximum target temperature supported by the wafer carrier device. The first set multiple N1 is greater than 1, that is, N1 > 1; the maximum outer zone heating power maxP of the outer zone heating component 14 is set. 外 The second set multiple N2 is the actual cooling power of the external cooling zone corresponding to the maximum target temperature supported by the wafer carrier device. The second set multiple N2 is greater than 1, that is, N2 > 1.

[0044] For example, if the design of a wafer carrier device needs to meet operating conditions of 50℃ and 200℃, then the maximum target temperature of the wafer carrier device is maxT. 目标 The target temperature is 200℃, meaning both the inner and outer zones are 200℃. Based on the heat conduction formula (1), theoretical calculations or simulations can be performed to determine the actual cooling power of the cooling zone within the water-cooled pan, which is also the actual cooling power P of the inner zone. 内实际 =P1, then set (or select) the maximum internal heating power maxP of the internal heating component 12. 内 = N1 * P1, where N1 > 1, and can be set as needed; the inner zone heating power P 内 Greater than the actual cooling power P of the inner zone 内实际 When P1 is reached, the internal heating zone can begin to heat up, eventually reaching the target temperature Ti = 200℃, thus obtaining the actual temperature T of the internal zone. 内实际 =Ti=200℃. Similarly, based on the heat conduction formula (1), theoretical calculations or simulation analyses can be performed to obtain the actual cooling power of the outer cooling zone of the water-cooled plate, which is also the actual cooling power P of the outer zone. 外实际 =P2, then set (or select) the maximum external heating power maxP of the external heating component 14. 外 = N2 * P2, where N2 > 1, and can be set as needed; external zone heating power P 外 Greater than the actual cooling power P of the outer zone 外实际 When P2 is reached, the external heating zone can begin to heat up, eventually reaching the target temperature To = 200℃, thus obtaining the actual temperature T of the external zone. 外 实际 =To=200℃.

[0045] In summary, the wafer carrier device of this application embodiment includes a heating assembly and a water-cooled plate. The heating assembly includes a heater body, which includes an inner heating zone and an outer heating zone. The outer heating zone is located outside the radial direction of the inner heating zone. The inner heating zone is provided with an inner heating component and an inner temperature measuring component, and the outer heating zone is provided with an outer heating component and an outer temperature measuring component. The edge of the water-cooled plate is provided with an annular protrusion structure. The water-cooled plate is sealed to the heater body through the annular protrusion structure. The radial width and height of the annular protrusion structure are set according to the required operating temperature of the wafer carrier device. The area inside the annular protrusion structure is the inner cooling zone, and the area where the annular protrusion structure is located is the outer cooling zone. There is a gap between the inner cooling zone and the heater body. This embodiment divides the cooling of the heater body by a water-cooled plate into inner and outer zones. The outer cooling zone uses solid-state heat conduction, while the inner cooling zone uses air heat conduction and radiation. The cooling capacity of the inner and outer zones is adjusted by regulating the width and height of the annular protrusion structure of the water-cooled plate. These two cooling methods provide strong cooling capacity under both high and low temperature conditions, simultaneously addressing both. By setting inner and outer heating zones corresponding to the inner and outer cooling zones, and adjusting the target heating temperatures of both zones, the direction of process heat flow can be adjusted in real time, achieving online adjustable cooling capacity to meet the needs of various operating conditions.

[0046] This application also provides a temperature control method for a wafer carrier device. As shown in FIG6, the temperature control method for a wafer carrier device provided in this application embodiment is applied to the wafer carrier device of any of the above embodiments, and the temperature control method specifically includes the following steps:

[0047] S601, obtain the target temperature of the wafer carrier device.

[0048] In the embodiments of this application, the execution subject of the temperature control method for the wafer carrier device provided in the embodiments of this application is the temperature controller in the wafer carrier device of any of the above embodiments, and the temperature controller can be set in the heating power supply of the semiconductor process equipment.

[0049] Target temperature T of wafer carrier 目标 This refers to the temperature required for the wafer fabrication process, which is also the operating temperature required for the wafer carrier device. For example, if the wafer needs to undergo PVD processing at 200°C, then the operating temperature required for the wafer carrier device is 200°C, and the target temperature T of the wafer carrier device is... 目标 The target temperature is 200℃. Before the process begins, the target temperature T for the wafer carrier must be pre-set. 目标 And through temperature control, the wafer carrier device is gradually heated, and the final actual temperature T of the wafer carrier device is achieved.实际 Stabilize at the target temperature T 目标 The actual temperature of the wafer also stabilizes at the target temperature T. 目标 Then, the process begins.

[0050] S602, acquires in real time the actual temperature of the inner zone measured by the inner zone temperature measuring component and the actual temperature of the outer zone measured by the outer zone temperature measuring component, and adjusts at least one of the target temperature of the outer zone, the inner zone heating power of the inner zone heating component and the outer zone heating power of the outer zone heating component according to the actual temperature of the inner zone, the actual temperature of the outer zone and the target temperature of the wafer carrier device.

[0051] In this embodiment of the application, the actual temperature T of the wafer carrier device is measured before or during the process. 实际 It is constantly changing, therefore the actual temperature T in the inner zone is... 内实际 and the actual temperature T in the outer area 外实际 It is also constantly changing, therefore it is necessary to obtain the actual internal temperature T measured by the internal temperature measurement component in real time. 内实际 The actual temperature T of the outer zone measured by the outer zone temperature measuring component 外实际 .

[0052] The target temperature T of the wafer carrier obtained in step S601 目标 and the real-time acquired actual temperature T of the inner zone 内实际 and the actual temperature T in the outer area 外实际 The target temperature To in the outer zone and the heating power P in the inner zone of the heating components. 内 The external heating power P of the external heating component 外 At least one of them is adjusted.

[0053] Furthermore, before the process begins, the temperature of the wafer carrier device needs to be controlled so that the wafer carrier device gradually heats up, and the final actual temperature T of the wafer carrier device is achieved. 实际 Stabilize at the target temperature T 目标 Correspondingly, as shown in Figure 7, step S602 above, "adjusting at least one of the following based on the actual temperature of the inner zone, the actual temperature of the outer zone, and the target temperature of the wafer carrier device: the target temperature of the outer zone, the inner zone heating power of the inner zone heating component, and the outer zone heating power of the outer zone heating component," includes the following steps:

[0054] S701 sets the inner zone target temperature and the outer zone target temperature as the target temperatures of the wafer carrier device, respectively.

[0055] In this embodiment of the application, the target temperature T in the inner zone 内目标 The target temperature of the inner heating zone is T. The size of the inner heating zone is larger than the maximum size of the wafer supported on the heater body, and it plays a major role in heating the wafer.内目标 It is generally denoted as Ti, and is also called the process temperature. The target temperature in the outer zone is T. 外目标 The target temperature of the external heating zone, located outside the maximum size of the wafer supported on the heater body, primarily serves a regulating function. The target temperature T of the external zone... 外目标 It is generally denoted as To, also known as the set temperature. For example, the target temperature T of the wafer carrier is set before the process begins. 目标 If the target temperature is 200℃, then the inner zone target temperature Ti is also set to 200℃, and the outer zone target temperature To is also set to 200℃. Then, execute steps S702 and / or S703.

[0056] S702 adjusts the heating power of the inner zone according to the actual temperature and the target temperature of the inner zone, so that the actual temperature of the inner zone is stabilized at the target temperature of the inner zone.

[0057] In this embodiment, the heat generated by the inner heating component overcomes the cooling power of the cooling zone within the water-cooled pan, heating the inner heating zone of the heater body to the target temperature Ti. Specifically, this is determined based on the set target temperature Ti (e.g., 200°C) and the actual inner temperature T. 内实际 The real-time changes in the heating power P of the inner zone 内 A series of adjustments are made to ensure that the actual temperature T in the inner zone of the internal heating area is achieved. 内 实际 The temperature stabilizes at the target temperature Ti in the inner region.

[0058] The specific adjustment process can be as follows: if the actual temperature of the inner zone is less than the target temperature of the inner zone, increase the heating power of the inner zone; if the actual temperature of the inner zone is greater than the target temperature of the inner zone, decrease the heating power of the inner zone; and / or, if the actual temperature of the inner zone is equal to the target temperature of the inner zone, keep the heating power of the inner zone unchanged.

[0059] For example, in the case of a wafer carrier operating at 200°C, that is, the target temperature T of the wafer carrier... 目标 At 200℃, based on theoretical calculations or simulation analysis using the heat conduction formula (1), the actual cooling power of the cooling zone within the water-cooled pan, i.e., the actual cooling power P of the inner zone, can be obtained. 内实际 =P1, then the actual temperature T in the inner region 内实际 When the temperature is below the target temperature Ti = 200℃ in the inner zone, gradually increase the heating power P in the inner zone. 内 If the actual temperature T in the inner zone 内实际 If the internal heating power P is not increased, then continue to increase the internal heating power P. 内 Until the actual temperature T in the inner zone 内实际 Start changing, stop increasing internal zone heating power P 内 (Assuming P stops increasing) 内 Time P 内=N1'*P1, then N1'>1, meaning the heating power of the inner zone P is... 内 Greater than the actual cooling power P of the inner zone 内实际 =P1), thus causing the internal heating zone to begin heating up, eventually heating the internal heating zone to the target internal temperature Ti = 200℃, thus obtaining the actual internal temperature T. 内实际 =Ti=200℃. The actual temperature T in the inner region. 内实际 When the target temperature in the inner zone Ti = 200℃, maintain the heating power P in the inner zone. 内 The heating power P in the inner zone remains unchanged. 内 Greater than the actual cooling power P of the inner zone 内实际 =P1, thus preventing the internal heating zone from stabilizing at the current temperature Ti = 200℃, i.e., the actual temperature T of the internal zone. 内实际 It will continue to increase, that is, the actual temperature T in the inner zone. 内实际 > Target temperature Ti = 200℃ in the inner zone. Actual temperature T in the inner zone... 内实际 >When the target temperature Ti in the inner zone is 200℃, gradually decrease the heating power P in the inner zone. 内 If the actual temperature T in the inner zone 内实际 If the internal heating power P is not reduced, continue to reduce it. 内 Until the actual temperature T in the inner zone 内实际 Start changing, stop decreasing, inner zone heating power P 内 (Assuming P stops decreasing) 内 Time P 内 =N1'*P1, then N1'<1, that is, the heating power of the inner zone P 内 Less than the actual cooling power P of the inner zone 内实际 =P1), thus causing the internal heating zone to begin cooling down, eventually cooling down to the target internal temperature Ti = 200℃, which yields the actual internal temperature T. 内实际 =Ti=200℃. The actual temperature T in the inner region. 内实际 When the target temperature in the inner zone Ti = 200℃, maintain the heating power P in the inner zone. 内 The heating power P in the inner zone remains unchanged. 内 Less than the actual cooling power P of the inner zone 内实际 =P1, thus preventing the internal heating zone from stabilizing at the current temperature, i.e., the actual temperature T of the internal zone. 内实际 It will continue to decrease, that is, the actual temperature T in the inner zone. 内实际 <Target temperature Ti for the inner zone = 200℃. Continue in this manner, after multiple adjustments (actual temperature T for the inner zone) 内实际 After fluctuating around the target temperature Ti = 200℃ in the inner region for a period of time, the actual temperature T in the inner region eventually becomes... 内实际 The target temperature in the inner region is stabilized at Ti = 200℃.

[0060] S703 adjusts the heating power of the outer zone according to the actual temperature and target temperature of the outer zone, so that the actual temperature of the outer zone is stabilized at the target temperature.

[0061] In this embodiment, the heat generated by the external heating component overcomes the cooling power of the external cooling zone of the water-cooled plate, heating the external heating zone of the heater body to the target external temperature To. Specifically, this is determined based on the set target external temperature To (e.g., 200°C) and the actual external temperature T. 外实际 Based on the real-time changes, a series of adjustments are made to the heating power P of the outer zone to ensure that the actual temperature T of the outer zone of the external heating zone is maintained. 外实际 Stabilize at the target temperature To in the outer region.

[0062] The specific adjustment process can be as follows: if the actual temperature of the outer zone is less than the target temperature of the outer zone, increase the heating power of the outer zone; if the actual temperature of the outer zone is greater than the target temperature of the outer zone, decrease the heating power of the outer zone; and / or, if the actual temperature of the outer zone is equal to the target temperature of the outer zone, keep the heating power of the outer zone unchanged.

[0063] For example, in the case of a wafer carrier operating at 200°C, that is, the target temperature T of the wafer carrier... 目标 At 200℃, based on theoretical calculations or simulation analysis using the heat conduction formula (1), the actual cooling power of the outer cooling zone of the water-cooled plate, i.e., the actual cooling power P of the outer zone, can be obtained. 外实际 =P2, then the actual temperature T in the outer region 外实际 When the temperature of the outer zone is less than the target temperature To = 200℃, gradually increase the heating power P of the outer zone. 外 If the actual temperature T in the outer area 外实际 If the external heating power P is not increased, then continue to increase the external heating power P. 外 Until the actual temperature T in the outer zone 外实际 Start changing, stop increasing external zone heating power P 外 (Assuming P stops increasing) 外 Time P 外 =N2'*P2, then N2'>1, meaning the external heating power P 外 Greater than the actual cooling power P of the outer zone 外实际 =P2, thus causing the external heating zone to begin heating up, eventually heating the external heating zone to the target temperature To = 200℃, thus obtaining the actual temperature T of the external zone. 外实际 =To = 200℃. The actual temperature T in the outer zone. 外 实际 When the target temperature To in the outer zone is 200℃, maintain the heating power P in the outer zone. 外 The external heating power P remains unchanged because it is still the same at this time. 外 Greater than the actual cooling power P of the outer zone 外实际=P2, thus preventing the external heating zone from stabilizing at the current temperature To = 200℃, i.e., the actual temperature T of the external zone. 外实际 It will continue to increase, that is, the actual temperature T in the outer zone 外实际 > Target temperature To in the outer zone = 200℃. Actual temperature T in the outer zone... 外实际 >When the target temperature To in the outer zone is 200℃, gradually reduce the heating power P in the outer zone. 外 If the actual temperature T in the outer area 外实际 If the power is not reduced, continue to reduce the heating power P in the outer zone. 外 Until the actual temperature T in the outer zone 外实际 Start changing, stop decreasing, outer zone heating power P 外 (Assuming P stops decreasing) 外 Time P 外 =N2'*P2, then N2'<1, that is, the external heating power P 外 Less than the actual cooling power P of the outer zone 外实际 =P2), thus causing the external heating zone to begin cooling down, eventually cooling down to the target temperature To = 200℃, which is the actual temperature T of the external zone. 外实际 =To = 200℃. The actual temperature T in the outer zone. 外实际 When the target temperature To in the outer zone is 200℃, maintain the heating power P in the outer zone. 外 The external heating power P remains unchanged because it is still the same at this time. 外 Less than the actual cooling power P of the outer zone 外实 际 =P2, thus preventing the external heating zone from stabilizing at the current temperature, i.e., the actual temperature T of the external zone. 外实际 It will continue to decrease, that is, the actual temperature T in the outer zone. 外实际 <Target temperature To in the outer zone = 200℃. Continue in this manner, after multiple adjustments (actual temperature T in the outer zone). 外实际 After fluctuating around the target temperature To = 200℃ in the outer zone for a period of time, the actual temperature T in the outer zone eventually becomes... 外实际 The target temperature To in the outer region is stabilized at 200℃.

[0064] Furthermore, after the process begins, a large amount of process heat will be generated as the process proceeds. This process heat will cause the wafer to heat up, and the heat from the process heat will be conducted to the inner heating zone of the heater body. The direction of heat flow depends on the relationship between the inner zone target temperature Ti and the outer zone target temperature To. The principle of heat conduction is that heat flows from the area with higher temperature to the area with lower temperature.

[0065] When Ti>To, as shown in Figure 8, part of the process heat flows from the inner heating zone to the outer heating zone and is eventually carried away by the outer cooling zone of the water cooling plate, while the other part flows directly from the inner heating zone to the inner cooling zone of the water cooling plate.

[0066] When Ti < To, as shown in Figure 9, the process heat can only flow from the inner heating zone to the inner cooling zone of the water-cooled disk. Only the inner cooling zone plays a cooling role. Part of the heat generated by the outer zone heating component flows to the outer cooling zone, and the other part flows from the outer heating zone to the inner heating zone and is finally taken away by the inner cooling zone of the water-cooled disk.

[0067] Therefore, after the process starts, the temperature of the wafer carrier device needs to be controlled according to the real-time change of the process heat, so that the actual temperature of the inner zone of the wafer carrier device is stabilized at the target temperature of the inner zone, and then the temperature of the wafer is ensured to be stabilized at the process temperature. However, since the specific value of the process heat is difficult to accurately obtain through calculation, the heat of the process heat is conducted to the inner heating zone of the heater body. Therefore, it can be deduced according to the real-time change of the actual temperature of the inner zone measured by the inner zone temperature measuring component.

[0068] Correspondingly, the "adjusting at least one of the outer zone target temperature, the inner zone heating power of the inner zone heating component, and the outer zone heating power of the outer zone heating component according to the actual temperature of the inner zone, the actual temperature of the outer zone, and the target temperature of the wafer carrier device" in step S602 described above includes the following steps: After the process starts, the inner zone target temperature and the outer zone target temperature are still set to the target temperature of the wafer carrier device respectively; according to the actual temperature of the inner zone and the inner zone target temperature, adjust the inner zone heating power, the outer zone target temperature, and the outer zone heating power to make the actual temperature of the inner zone stable at the inner zone target temperature. Different from before the process starts, after the process starts, the actual temperature at this time reflects the relationship among the heating power, the process heat, and the cooling power. For example, when the sum of the heating power and the process heat is greater than the cooling power, the temperature will rise; when the sum of the heating power and the process heat is less than the cooling power, the temperature will drop; and in the case where the process heat cannot be adjusted, the actual temperature is still adjusted by adjusting the heating power of the inner and outer zones, and the adjustment method is the same as that in step S602 described above.

[0069] As shown in Figure 10, the above step "adjusting the inner zone heating power, the outer zone target temperature, and the outer zone heating power according to the actual temperature of the inner zone and the inner zone target temperature to make the actual temperature of the inner zone stable at the inner zone target temperature" may specifically include the following steps:

[0070] S1001, determining whether the actual temperature of the inner zone is greater than the target temperature of the inner zone.

[0071] In the embodiment of the present application, the actual temperature of the inner zone and the target temperature of the inner zone are compared to determine whether the actual temperature of the inner zone is greater than the target temperature of the inner zone. Then, one of step S1002, step S1003, and S1004 is executed according to the judgment result.

[0072] S1002, if the actual temperature of the inner zone is greater than the target temperature of the inner zone, reduce the heating power of the inner zone to lower the actual temperature of the inner zone to the target temperature of the inner zone; if adjusting the heating power of the inner zone to zero still cannot lower the actual temperature of the inner zone to the target temperature of the inner zone, lower the target temperature of the outer zone and reduce the heating power of the outer zone to lower the actual temperature of the inner zone to the target temperature of the inner zone. Proceed to step S1004.

[0073] S1003, If the actual temperature of the inner zone is lower than the target temperature of the inner zone, increase the heating power of the inner zone if the heating power of the inner zone is not zero, or increase the heating power of the outer zone if the heating power of the inner zone is zero, so that the actual temperature of the inner zone rises to the target temperature of the inner zone. Proceed to step S1004.

[0074] S1004, If the actual temperature of the inner zone is equal to the target temperature of the inner zone, then keep the heating power of the inner zone and the heating power of the outer zone unchanged. Return to step S1001 to continue the judgment.

[0075] In this embodiment of the application, it is assumed that the target temperature T of the wafer carrier device is 200°C. 目标 The target temperature is 200℃, meaning the inner zone target temperature Ti = 200℃ and the outer zone target temperature To = 200℃. The actual cooling power P of the inner cooling zone is... 内实际 =500W, actual cooling power P of the external cooling zone 外实际 =600W, to maintain the wafer carrier at the target temperature, the internal heating power P 内 =500W, external zone heating power P 外 =600W.

[0076] When the generated process heat causes the actual temperature of the inner zone to rise instead of stabilizing at the target temperature Ti = 200℃, i.e., the actual temperature of the inner zone exceeds the target temperature Ti = 200℃, the heating power of the inner zone should be reduced. When the process heat is relatively small (less than the actual cooling power of 500W), the actual temperature of the inner zone can be reduced to the target temperature of 200℃ simply by reducing the heating power. When the process heat is relatively large (equal to or greater than the actual cooling power of 500W), and reducing the heating power to zero is insufficient to reduce the actual temperature of the inner zone to the target temperature of 200℃, the target temperature To of the outer zone and the heating power of the outer zone also need to be reduced.

[0077] For example, when the generated process heat is less than the actual cooling power P in the inner zone 内实际=500W, for example, when the process heat is 200W (the process heat cannot be accurately known; this is only for quantitative description of the amount of process heat generated), the inner zone heating power needs to be reduced to 500W - 200W = 300W (since the process heat cannot be accurately known, the adjusted value of the inner zone heating power is not calculated but adjusted; this is only for quantitative description of the amount of inner zone heating power). At this time, the process heat, inner zone heating power, and actual inner zone cooling power are in a dynamic equilibrium. Then, the inner zone heating power is kept constant at 300W, and the actual temperature of the inner zone of the wafer carrier device continues to be maintained at the inner zone target temperature Ti = 200℃. It should be noted that since the adjusted value of 300W for the inner zone heating power is not calculated but adjusted multiple times, the actual inner zone temperature will fluctuate around the inner zone target temperature during the multiple adjustments. That is, when the actual inner zone temperature is lower than the inner zone target temperature, the inner zone heating power is increased; when the actual inner zone temperature is equal to the inner zone target temperature, the inner zone heating power is kept constant.

[0078] For example, when the generated process heat equals the actual cooling power P in the inner zone... 内实际 When the process heat is 500W, the internal heating power needs to be reduced to 500W - 500W = 0W. At this point, the process heat and the actual internal cooling power are in dynamic equilibrium. Afterward, the internal heating power is kept constant at 0W, and the actual internal temperature of the wafer carrier remains at the target internal temperature Ti = 200℃. It should be noted that since the process heat cannot be accurately determined, the adjusted internal heating power value of 0W is not calculated but determined through multiple adjustments. Therefore, during these adjustments, there may be instances where even with zero internal heating power, the actual internal temperature cannot be reduced to the target internal temperature. In such cases, the target external temperature and external heating power need to be adjusted. The specific process is similar to that described below when the process heat is 600W, and will not be repeated here.

[0079] For example, when the generated process heat is greater than the actual cooling power P in the inner zone... 内实际 =500W, for example, when the process heat is 600W, the internal heating power needs to be reduced to 0W. The process heat is greater than the actual cooling power P. 内实际=500W is 100W more, the wafer carrier will heat up, and the actual temperature of the inner area of ​​the wafer carrier cannot be maintained at the inner area target temperature Ti = 200℃. In this case, the outer area target temperature To needs to be reduced by the set temperature, for example, reduced by 10℃ to 190℃. Ti>To, part of the process heat flow will flow from the inner heating area to the outer heating area and will eventually be carried away by the outer cooling area. The outer area heating power needs to be reduced to 600W-100W=500W. At this time, the process heat, the outer area heating power, the inner area actual cooling power, and the outer area actual cooling power are in dynamic equilibrium. After that, the inner area heating power = 0W and the outer area heating power = 500W remain unchanged, and the actual temperature of the inner area of ​​the wafer carrier is maintained at the inner area target temperature Ti = 200℃. It should be noted that the 500W value of the external heating power is not calculated but adjusted multiple times. Therefore, during the multiple adjustments, the actual temperature of the internal zone will fluctuate around the target temperature of the internal zone. That is, when the actual temperature of the internal zone is lower than the target temperature of the internal zone, the external heating power is increased; when the actual temperature of the internal zone is equal to the target temperature of the internal zone, the heating power of the internal zone and the external heating power remain unchanged.

[0080] Additionally, after the process begins, if it is determined from the temperature measurement components on the wafer surface or the process results that it is necessary to adjust the wafer temperature uniformity, for example, if the temperature of the external heating zone needs to be increased, then the inner zone target temperature Ti is set to be less than the outer zone target temperature To. Specifically, the inner zone target temperature Ti is set to the target temperature T of the wafer carrier device. 目标 Set the outer region target temperature To to the target temperature T of the wafer carrier device. 目 标 The sum of the set temperature and the set temperature, wherein the set temperature is not equal to 0℃. When the external heating zone needs to increase the temperature, the set temperature is greater than 0℃, and the set temperature can be set to, for example, 10℃; when the external heating zone needs to decrease the temperature, the set temperature is less than 0℃, and the set temperature can be set to, for example, -10℃.

[0081] Since the target temperature Ti in the inner zone does not change after the process begins, the heating power in the inner zone remains constant and does not need to be adjusted. Only the heating power in the outer zone needs to be adjusted: the heating power in the outer zone is adjusted according to the actual temperature and the target temperature so that the actual temperature in the outer zone is stabilized at the target temperature in the outer zone. For details, please refer to the relevant content in the above embodiments, which will not be repeated here.

[0082] In summary, the temperature control method for the wafer carrier device provided in this application divides the cooling of the heater body by water-cooled plate into inner and outer zones. The outer cooling zone uses solid-state heat conduction, while the inner cooling zone uses air heat conduction and thermal radiation. The cooling capacity of the inner and outer zones is adjusted by regulating the radial width and height of the annular protrusion structure of the water-cooled plate. These two cooling methods provide strong cooling capacity under both high-temperature and low-temperature conditions, simultaneously addressing both conditions. By setting inner and outer heating zones corresponding to the inner and outer cooling zones, and adjusting the target heating temperatures of these two zones, the direction of process heat flow can be adjusted in real time, achieving online adjustable cooling capacity to meet the needs of various operating conditions.

[0083] This application also provides a semiconductor process apparatus. As shown in FIG2, the semiconductor process apparatus of this application includes: a process chamber 8, a temperature controller, and a wafer carrier device as shown in any of the above embodiments. The temperature controller includes at least one processor and at least one memory. The memory stores a computer program, and when the computer program is executed by the processor, it implements the steps of the temperature control method embodiment of any of the above wafer carrier devices.

[0084] The semiconductor process equipment provided in this application divides the cooling method of the heater body by water cooling plate into inner and outer zones. The outer cooling zone uses solid-state heat conduction, while the inner cooling zone uses air heat conduction and thermal radiation. The cooling capacity of the inner and outer zones is adjusted by regulating the radial width and height of the annular protrusion structure of the water cooling plate. These two cooling methods provide strong cooling capacity under both high and low temperature conditions, simultaneously addressing both. By setting inner and outer heating zones corresponding to the inner and outer cooling zones, and adjusting the target heating temperatures of the two zones, the direction of process heat flow can be adjusted in real time, achieving online adjustable cooling capacity to meet the needs of various operating conditions.

[0085] This application also proposes a readable storage medium storing one or more computer programs, the one or more computer programs including instructions. When the program or instructions are executed by a processor in a semiconductor process apparatus including multiple applications, the processor in the semiconductor process apparatus is able to execute the various processes of the above-described temperature control method embodiments for wafer carrier devices, and is specifically used to execute the steps of any of the above-described temperature control method embodiments for wafer carrier devices.

[0086] The readable storage medium of this application embodiment divides the cooling method of the heater body by water-cooled plate into inner and outer zones. The outer cooling zone uses solid-state heat conduction, while the inner cooling zone uses air heat conduction and thermal radiation. The cooling capacity of the inner and outer zones is adjusted by regulating the width and height of the annular protrusion structure of the water-cooled plate. These two cooling methods provide strong cooling capacity under both high-temperature and low-temperature conditions, simultaneously addressing both. By setting inner and outer heating zones corresponding to the inner and outer cooling zones, and adjusting the target heating temperatures of the two zones, the direction of process heat flow can be adjusted in real time, achieving online adjustable cooling capacity to meet the needs of various operating conditions.

[0087] The systems, devices, modules, or units described in the above embodiments can be implemented by computer chips or entities, or by products with certain functions. A typical implementation device is a computer. Specifically, a computer can be, for example, a personal computer, laptop computer, cellular phone, camera phone, smartphone, personal digital assistant, media player, navigation device, email device, game console, tablet computer, wearable device, or any combination of these devices.

[0088] For ease of description, the above devices are described separately by function as various units. Of course, in implementing this application, the functions of each unit can be implemented in one or more software and / or hardware.

[0089] Those skilled in the art will understand that embodiments of this application can be provided as methods, systems, or computer program products. Therefore, this application can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, this application can take the form of a computer program product embodied on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0090] This application is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of this application. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in one or more flowchart illustrations and / or one or more block diagrams.

[0091] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means that implement the functions specified in one or more flowcharts and / or one or more block diagrams.

[0092] These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer-implemented process, such that the instructions, which execute on the computer or other programmable apparatus, provide steps for implementing the functions specified in one or more flowcharts and / or one or more block diagrams.

[0093] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0094] Memory may include non-persistent storage in computer-readable media, such as random access memory (RAM) and / or non-volatile memory, such as read-only memory (ROM) or flash RAM. Memory is an example of computer-readable media.

[0095] Computer-readable media includes both permanent and non-permanent, removable and non-removable media that can store information using any method or technology. Information can be computer-readable instructions, data structures, modules of programs, or other data. Examples of computer storage media include, but are not limited to, phase-change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technologies, CD-ROM, digital versatile optical disc (DVD) or other optical storage, magnetic tape, magnetic magnetic disk storage or other magnetic storage devices, or any other non-transferable medium that can be used to store information accessible by a computing device. As defined herein, computer-readable media does not include transient computer-readable media, such as modulated data signals and carrier waves.

[0096] It should also be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0097] This application can be described in the general context of computer-executable instructions, such as program modules, that are executed by a computer. Generally, program modules include routines, programs, objects, components, data structures, etc., that perform a specific task or implement a specific abstract data type. This application can also be practiced in distributed computing environments where tasks are performed by remote processing devices connected via a communication network. In distributed computing environments, program modules can reside in local and remote computer storage media, including storage devices.

[0098] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to interchangeably. Each embodiment focuses on describing the differences from other embodiments. In particular, the system embodiments are basically similar to the method embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions in the method embodiments.

[0099] The above are merely embodiments of this application and are not intended to limit the scope of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of the claims of this application.

Claims

1. A wafer carrier device, characterized in that, include: A heating assembly includes a heater body, which includes an inner heating zone and an outer heating zone. The outer heating zone is located outside the inner heating zone in the radial direction. An inner heating component and an inner temperature measuring component are disposed in the inner heating zone, and an outer heating component and an outer temperature measuring component are disposed in the outer heating zone. The water-cooling plate has an annular protrusion structure on its edge. The water-cooling plate is sealed to the heater body through the annular protrusion structure. The width and height of the annular protrusion structure are set according to the required operating temperature of the wafer carrier device. The area inside the annular protrusion structure is the inner cooling zone, and the area where the annular protrusion structure is located is the outer cooling zone. There is a gap between the water-cooling plate and the heater body in the inner cooling zone.

2. The wafer carrier device according to claim 1, characterized in that, Also includes: The mounting spindle is connected to the lower wall of the process chamber and the water-cooling plate, respectively, and is used to support the heater body and the water-cooling plate.

3. The wafer carrier device according to claim 1, characterized in that, The annular protrusion structure at least partially overlaps with the outer heating component in the radial direction of the water cooling plate.

4. The wafer carrier device according to claim 1, characterized in that, The outer heating element is closer to the water cooling plate in the vertical direction than the inner heating element.

5. The wafer carrier device according to claim 1, characterized in that, The water cooling plate is equipped with cooling water channels and inlet and outlet water pipes. The cooling water channels are connected to the cooling system outside the process chamber through the inlet and outlet water pipes. The inner zone heating component, the inner zone temperature measuring component, the outer zone heating component, and the outer zone temperature measuring component are connected to the heating power supply outside the process chamber.

6. The wafer carrier device according to claim 1, characterized in that, The size of the inner heating zone is larger than the maximum size of the wafer that the heater body needs to support.

7. The wafer carrier device according to claim 5, characterized in that, Also includes: A temperature controller is installed within the heating power supply. The temperature controller is used to adjust at least one of the following based on the actual temperature of the inner zone measured by the inner zone temperature measuring component, the actual temperature of the outer zone measured by the outer zone temperature measuring component, and the target temperature of the wafer carrier device: the target temperature of the outer zone, the inner zone heating power of the inner zone heating component, and the outer zone heating power of the outer zone heating component.

8. A temperature control method for a wafer carrier device, characterized in that, Applied in the wafer carrier device as described in any one of claims 1-7, the method comprises: Obtain the target temperature of the wafer carrier device; The actual temperature of the inner zone measured by the inner zone temperature measuring component and the actual temperature of the outer zone measured by the outer zone temperature measuring component are acquired in real time. Based on the actual temperature of the inner zone, the actual temperature of the outer zone, and the target temperature of the wafer carrier device, at least one of the target temperature of the outer zone, the inner zone heating power of the inner zone heating component, and the outer zone heating power of the outer zone heating component is adjusted.

9. The method according to claim 8, characterized in that, The step of adjusting at least one of the following based on the actual temperature of the inner region, the actual temperature of the outer region, and the target temperature of the wafer carrier device: the target temperature of the outer region, the inner region heating power of the inner region heating component, and the outer region heating power of the outer region heating component, includes: Before the process begins, the inner zone target temperature and the outer zone target temperature are respectively set as the target temperatures of the wafer carrier device; The heating power of the inner zone is adjusted according to the actual temperature and the target temperature of the inner zone to stabilize the actual temperature of the inner zone at the target temperature; and / or, The heating power of the outer zone is adjusted according to the actual temperature of the outer zone and the target temperature of the outer zone, so that the actual temperature of the outer zone is stabilized at the target temperature of the outer zone.

10. The method according to claim 9, characterized in that, The step of adjusting the heating power of the inner zone based on the actual temperature of the inner zone and the target temperature of the inner zone, so as to stabilize the actual temperature of the inner zone at the target temperature of the inner zone, includes: If the actual temperature of the inner zone is lower than the target temperature of the inner zone, then increase the heating power of the inner zone; and / or, If the actual temperature of the inner zone is greater than the target temperature of the inner zone, then reduce the heating power of the inner zone; and / or, If the actual temperature of the inner zone is equal to the target temperature of the inner zone, then the heating power of the inner zone remains unchanged.

11. The method according to claim 9 or 10, characterized in that, The step of adjusting the heating power of the outer zone based on the actual temperature and the target temperature of the outer zone to stabilize the actual temperature of the outer zone at the target temperature includes: If the actual temperature of the outer zone is lower than the target temperature of the outer zone, then increase the heating power of the outer zone; and / or, If the actual temperature of the outer zone is greater than the target temperature of the outer zone, then reduce the heating power of the outer zone; and / or, If the actual temperature of the outer zone is equal to the target temperature of the outer zone, then the heating power of the outer zone remains unchanged.

12. The method according to claim 8 or 9, characterized in that, The step of adjusting at least one of the following based on the actual temperature of the inner region, the actual temperature of the outer region, and the target temperature of the wafer carrier device: the target temperature of the outer region, the inner region heating power of the inner region heating component, and the outer region heating power of the outer region heating component, includes: After the process begins, the inner zone target temperature and the outer zone target temperature are respectively set as the target temperatures of the wafer carrier device; Based on the actual temperature of the inner zone and the target temperature of the inner zone, adjust the heating power of the inner zone, the target temperature of the outer zone, and the heating power of the outer zone to stabilize the actual temperature of the inner zone at the target temperature of the inner zone.

13. The method according to claim 12, characterized in that, The step of adjusting the heating power of the inner zone, the target temperature of the outer zone, and the heating power of the outer zone based on the actual temperature of the inner zone and the target temperature of the inner zone includes: If the actual temperature of the inner zone is greater than the target temperature of the inner zone, the heating power of the inner zone is reduced to lower the actual temperature of the inner zone to the target temperature of the inner zone; wherein, if adjusting the heating power of the inner zone to zero still fails to lower the actual temperature of the inner zone to the target temperature of the inner zone, the target temperature of the outer zone is reduced and the heating power of the outer zone is reduced to lower the actual temperature of the inner zone to the target temperature of the inner zone.

14. The method according to claim 8 or 9, characterized in that, Also includes: After the process begins, if it is determined from the temperature measurement components on the wafer surface or the process results that it is necessary to adjust the wafer temperature uniformity, then the inner region target temperature is set as the target temperature of the wafer carrier device, and the outer region target temperature is set as the sum of the target temperature of the wafer carrier device and the set temperature, wherein the set temperature is not equal to 0°C. The heating power of the outer zone is adjusted according to the actual temperature of the outer zone and the target temperature of the outer zone, so that the actual temperature of the outer zone is stabilized at the target temperature of the outer zone.

15. A semiconductor process apparatus, characterized in that, include: A process chamber, a temperature controller, and a wafer carrier, wherein the temperature controller includes at least one processor and at least one memory, the memory storing a computer program that, when executed by the processor, implements the steps of the method as described in any one of claims 8-14.

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