Wafer boat and semiconductor process device
By designing a support frame structure and a crystal boat with flow channels, the problem of wafer displacement and warping caused by airflow in semiconductor processes was solved, improving the stability of wafer transport and process effect, and increasing wafer yield.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
- Filing Date
- 2026-01-05
- Publication Date
- 2026-07-23
AI Technical Summary
During semiconductor manufacturing processes, wafers are prone to positional shifts and warping due to airflow, leading to collisions and scrapes during transport, which affects process performance and reduces yield.
Design a crystal boat with a support frame structure, including at least three support pillars and flow guide holes. The wafer bearing surface of the support pillars extends along the circumference of the wafer to increase the contact area, and the flow guide holes guide the cooling gas to avoid the airflow exerting a large force on the wafer.
It effectively avoids wafer position shift and warping, improves wafer transport stability and yield, and ensures process performance.
Smart Images
Figure CN2026070415_23072026_PF_FP_ABST
Abstract
Description
Crystal boats and semiconductor process equipment Technical Field
[0001] This application belongs to the field of semiconductor technology, specifically relating to a crystal boat and semiconductor process equipment. Background Technology
[0002] In the field of semiconductor technology, a crystal boat is a device that directly contacts the wafer during semiconductor process equipment. The crystal boat is a key component of semiconductor process equipment and directly affects the process quality of the wafer.
[0003] In related technologies, semiconductor process equipment uses a three-column short-toothed boat, meaning the boat has three columns along its circumference, each column with multiple vertical slots. The boat supports the edge of the wafer using these slots. However, when the boat carries the wafer, it is prone to displacement due to airflow during the process and warping under high temperatures. This is especially true for thinned wafers (approximately 0.08 mm thick), which are more susceptible to displacement due to airflow and warping under high temperatures. This can cause the wafer to collide and scrape against the boat during wafer transport, affecting the transport process, the wafer's performance, and even leading to wafer scrap and reduced yield. Summary of the Invention
[0004] The purpose of this application is to provide a wafer boat and semiconductor process equipment that can solve the problems of wafer warping and positional displacement in related technologies.
[0005] In a first aspect, embodiments of this application provide a wafer carrier, including a support frame, the interior of which is provided with a wafer carrying space, and the support frame has a central axis. The support frame is provided with at least three support columns spaced apart along a direction surrounding the central axis. Two adjacent support columns of the at least three support columns are respectively a first support column and a second support column. An opening for a wafer transport device to pass through is formed between the first support column and the second support column, and the opening communicates with the wafer carrying space.
[0006] Each of the support pillars is provided with a wafer bearing surface, and the wafer bearing surface of each support pillar can support the same wafer within the wafer bearing space. The wafer bearing surface of the first support pillar and the wafer bearing surface of the second support pillar extend along the direction surrounding the central axis.
[0007] In this embodiment, the support frame of the wafer boat has at least three support pillars. The wafer-bearing surfaces of multiple support pillars simultaneously support the same wafer to ensure the stability of the wafer's bearing capacity. During the process of the wafer transport device carrying the wafer and entering the wafer-bearing space through the opening, the wafer-bearing surfaces of the first and second support pillars located on both sides of the opening support the wafer from both sides, ensuring a balanced force on the wafer. Furthermore, the wafer-bearing surfaces of the first and second support pillars extend along the direction surrounding the central axis, which corresponds to the center of the wafer. Therefore, in the circumferential direction of the wafer, the contact area between the wafer-bearing surfaces of the first and second support pillars increases, further improving the stability of the wafer-bearing surfaces. This effectively prevents wafer displacement due to airflow and warping under high-temperature conditions, avoids collisions and scrapes between the wafer and the wafer boat during wafer transport, ensures the wafer's processing performance, and improves wafer yield.
[0008] In some embodiments, in the height direction of the support frame, each of the support columns is provided with a plurality of slots at intervals, the slot wall surface of each slot serves as the wafer bearing surface, and the slots of each support column correspond one-to-one, so that the support frame supports a plurality of wafers.
[0009] With this configuration, each support pillar directly forms a groove to create the wafer carrier surface. The support pillars no longer need to have multiple protrusions to form the wafer carrier surface, which simplifies the support pillars and also simplifies the structure of the wafer boat.
[0010] In some embodiments, the support frame is provided with a flow guide hole that extends circumferentially along the support frame and is located between two adjacent support columns.
[0011] This configuration, with its flow guide holes, directs the cooling gas entering the wafer carrier space, allowing the gas to flow parallel to the wafer surface. This prevents the cooling gas generated by the air supply device from exerting a large force on the wafer, thus avoiding wafer displacement due to airflow.
[0012] In some embodiments, multiple guide holes are spaced apart in the height direction of the support frame.
[0013] With this configuration, the number of guide holes increases along the height of the support frame. Each guide hole guides the cooling gas entering different areas of the wafer carrier space, which helps to improve the guiding effect, further avoids the cooling gas exerting force on the wafer, and thus avoids wafer displacement, which is more conducive to improving the wafer carrier stability.
[0014] In some embodiments, in the height direction of the support frame, each of the support columns is provided with a plurality of wafer bearing surfaces at intervals, and the wafer bearing surfaces of each support column correspond one-to-one so that the support frame supports a plurality of wafers. The guide hole is located between two adjacent wafer bearing surfaces, and the distance between the guide hole and the wafer bearing surface adjacent above it is a first distance, and the distance between the guide hole and the wafer bearing surface adjacent below it is a second distance, the second distance being greater than the first distance.
[0015] With this configuration, when the wafer carrier surface supports the wafer, because the flow guide hole is relatively close to the wafer located above it, the gas flow velocity on the lower surface of the wafer is greater than the gas flow velocity on the upper surface of the wafer. Therefore, the gas pressure on the lower surface of the wafer is less than the gas pressure on the upper surface of the wafer, which creates a pressure difference between the upper and lower surfaces of the same wafer. The wafer bears a vertically downward pressure, which helps the wafer to be stably located on the wafer carrier surface and reduces the risk of wafer slippage.
[0016] In some embodiments, the central angle corresponding to the wafer bearing surface of at least one of the first support pillar and the second support pillar is greater than 25°.
[0017] With this configuration, the extension length of the wafer-bearing surface of at least one of the first and second support pillars is further increased. Therefore, when the wafer is carried by the crystal boat, the contact area and support area between the wafer-bearing surface and the edge of the wafer are larger in the circumferential direction, which is more conducive to improving the wafer's carrying stability.
[0018] In some embodiments, at least two third support columns are spaced apart along the direction surrounding the central axis.
[0019] With this configuration, the number of third support pillars increases, which in turn increases the number of wafer bearing surfaces supporting the same wafer. In the circumferential direction of the wafer, the contact area between the support pillars and the wafer is further enlarged, which is more conducive to improving the wafer's bearing stability.
[0020] Secondly, embodiments of this application also provide a semiconductor process apparatus, including a wafer transport device and the aforementioned wafer boat, wherein the wafer transport device is used to pick up and place the wafer from the wafer boat.
[0021] With this configuration, the semiconductor process equipment's crystal boat employs a specially structured first and second support pillar. This increases the contact area between the wafer-bearing surface of the first support pillar and the wafer in the circumferential direction, as well as the contact area between the wafer-bearing surface of the second support pillar and the wafer. This improves the wafer's load-bearing stability, effectively prevents wafer displacement due to airflow, and effectively prevents wafer warping under high-temperature conditions.
[0022] In some embodiments, the wafer transfer device includes opposing first and second support arms, the first and second support arms supporting the same wafer.
[0023] The opening has a first edge and a second edge. In the width direction of the opening, there is a third distance between the first edge and the third support post, and a fourth distance between the second edge and the third support post. The third distance is greater than the width of the first support arm, and the fourth distance is greater than the width of the second support arm.
[0024] With this configuration, when the wafer transfer device extends into the wafer carrying space, the first support arm moves within the range corresponding to the third distance, and the second support arm moves within the range corresponding to the fourth distance. Therefore, the third distance is greater than the width of the first support arm, and the fourth distance is greater than the width of the second support arm. This facilitates the smooth movement of the first support arm within the range corresponding to the third distance without colliding with the third support column, and also facilitates the smooth movement of the second support arm within the range corresponding to the fourth distance without colliding with the third support column. This further facilitates the smooth transfer of the wafer by the wafer transfer device.
[0025] In some embodiments, the semiconductor process equipment further includes a process gate and a ventilation device. The process gate is connected to the crystal boat and can drive the crystal boat to switch between a first rotational position and a second rotational position. The support frame is provided with a flow guide hole that extends circumferentially along the support frame.
[0026] With the crystal boat in the first rotational position, the opening faces the wafer transport device;
[0027] When the crystal boat is in the second rotational position, the flow guide hole faces the air supply device.
[0028] By switching the rotation position of the wafer carrier using process gates, the opening can be directly aligned with the wafer transport device during wafer transfer, and the guide hole can be directly aligned with the air supply device during cooling. This configuration improves both the transfer efficiency of the wafer transport device and the airflow guidance effect of the guide hole on cooling gas, effectively preventing wafer misalignment during cooling, thus improving wafer yield and production efficiency. Attached Figure Description
[0029] Figure 1 is a schematic diagram of the structure of a crystal boat disclosed in an embodiment of this application;
[0030] Figure 2 is a front view of a crystal boat disclosed in an embodiment of this application;
[0031] Figure 3 is a cross-sectional view of a crystal boat disclosed in an embodiment of this application;
[0032] Figure 4 is a partial structural schematic diagram of a crystal boat disclosed in an embodiment of this application;
[0033] Figure 5 is a schematic diagram of the structure of a crystal boat disclosed in another embodiment of this application;
[0034] Figure 6 is a front view of a crystal boat disclosed in another embodiment of this application;
[0035] Figure 7 is a cross-sectional view of a crystal boat disclosed in another embodiment of this application;
[0036] Figure 8 is a schematic diagram of the structure of a crystal boat disclosed in another embodiment of this application;
[0037] Figure 9 is a partial cross-sectional view of a crystal boat disclosed in another embodiment of this application;
[0038] Figure 10 is a partial structural schematic diagram of a crystal boat disclosed in another embodiment of this application;
[0039] Figure 11 is a second partial structural schematic diagram of a crystal boat disclosed in another embodiment of this application;
[0040] Figure 12 is a third partial structural schematic diagram of a crystal boat disclosed in another embodiment of this application;
[0041] Figure 13 is a fourth partial structural schematic diagram of a crystal boat disclosed in another embodiment of this application;
[0042] Figure 14 is a schematic diagram of the cooperation between the crystal boat and the wafer transport device disclosed in another embodiment of this application;
[0043] Figures 15 and 16 are schematic diagrams of the cooperation between the crystal boat and the wafer disclosed in another embodiment of this application;
[0044] Figure 17 is a schematic diagram of the structure of the semiconductor process equipment disclosed in the embodiments of this application when the crystal boat is in the first rotation position;
[0045] Figure 18 is a top view of the semiconductor process equipment disclosed in the embodiments of this application when the crystal boat is in the first rotation position;
[0046] Figure 19 is a schematic diagram of the structure of the semiconductor process equipment disclosed in the embodiments of this application when the crystal boat is in the second rotation position;
[0047] Figure 20 is a top view of the semiconductor process equipment disclosed in the embodiments of this application when the crystal boat is in the second rotation position.
[0048] Explanation of reference numerals in the attached drawings: 10-Crystal boat, 100-Support frame, 110-Support body, 111-Guide hole, 120-Top plate, 130-Bottom plate, 131-Connecting hole, a-Opening, 200-Support column, 201-First support column, 202-Second support column, 203-Third support column, 210-Groove, 211-Wafer bearing surface, S-Wafer, 20-Process gate, 30-Wafer transfer device, 31-First support arm, 32-Second support arm, 30a-Support area, 40-Wafer container opening device, 51-Air supply device, 52-Air duct, 60-Chassis, 61-Microenvironment, 70-Reaction chamber, 80-Heating device. Detailed Implementation
[0049] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.
[0050] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.
[0051] The crystal boat and semiconductor process equipment provided in this application will be described in detail below with reference to the accompanying drawings, through specific embodiments and application scenarios.
[0052] Please refer to Figures 1 to 20. The crystal boat 10 disclosed in this application embodiment is used to carry the wafer S. During the semiconductor process equipment process of the wafer S, the crystal boat 10 is a device that directly contacts the wafer S.
[0053] The crystal boat 10 includes a support frame 100, which serves as the main component of the crystal boat 10 and the mounting base for other parts of the crystal boat 10. In some embodiments, the support frame 100 can be a ring-shaped structure or a column-shaped structure. The specific structure of the support frame 100 is not limited in the embodiments of this application.
[0054] The support frame 100 has a wafer-carrying space inside and a central axis. When the support frame 100 carries a wafer S, the central axis of the support frame 100 corresponds to the center of the wafer S. The support frame 100 is provided with at least three support columns 200 spaced apart along the direction surrounding the central axis. Each support column 200 has a wafer-carrying surface 211, and the wafer-carrying surface 211 of each support column 200 can support the same wafer S within the wafer-carrying space. In some embodiments, each support column 200 can be a protruding structure, with the surface of the protruding structure forming the wafer-carrying surface 211; or, each support column 200 can be provided with a groove, with the groove wall forming the wafer-carrying surface 211. Thus, the support frame 100 has multiple support columns 200 along the circumference of the wafer S, and the wafer-carrying surfaces 211 of the multiple support columns 200 simultaneously support different positions of the same wafer S to ensure the carrying stability of the wafer S.
[0055] In the support frame 100, among the multiple support columns 200, two adjacent support columns are designated as the first support column 201 and the second support column 202, and the remaining support columns are referred to as the third support columns 203. There can be one or more third support columns 203. Referring to Figures 3 and 7, an opening a is formed between the first support column 201 and the second support column 202 for the wafer transfer device 30 to pass through, and the opening a communicates with the wafer carrying space. In a specific embodiment, there is one third support column 203, located between the first support column 201 and the second support column 202, and opposite to the opening a. It is readily understood that, along the direction surrounding the central axis, each of the first support column 201 and the second support column 202 has a first side and a second side, wherein the interval between the first side of the first support column 201 and the second side of the second support column 202 forms the opening a; at least one third support column 203 is arranged in the interval between the second side of the first support column 201 and the first side of the second support column 202.
[0056] Thus, during the process of the wafer transport device 30 carrying the wafer S and entering the wafer carrying space through the opening a, the wafer carrying surfaces 211 of the first support column 201 and the second support column 202 located on both sides of the opening a support the wafer S from both sides, ensuring the force balance of the wafer S during the transport process.
[0057] Furthermore, the wafer bearing surface 211 of the first support pillar 201 and the wafer bearing surface 211 of the second support pillar 202 extend along the direction surrounding the central axis. When the wafer S is located within the wafer bearing space and the wafer bearing surface 211 bears the wafer S, the central axis of the support frame 100 corresponds to the center of the supported wafer S. Therefore, the wafer bearing surface 211 of the first support pillar 201 and the wafer bearing surface 211 of the second support pillar 202 extend along the circumference of the wafer S. In other words, the wafer bearing surface 211 of the first support pillar 201 and the second support pillar 202 are both arc-shaped structures.
[0058] In some embodiments, the extension lengths of the wafer bearing surface 211 of the first support post 201 and the wafer bearing surface 211 of the second support post 202 may be equal or unequal.
[0059] In this embodiment, in the direction surrounding the central axis, that is, in the circumferential direction of the wafer S, the contact area between the wafer bearing surface 211 of the first support pillar 201 and the wafer S is increased, and the contact area between the wafer bearing surface 211 of the second support pillar 202 and the wafer S is increased. The stability of the wafer bearing surface 211 bearing the wafer S is further improved, effectively avoiding the positional displacement of the wafer S caused by airflow, effectively avoiding the warping of the wafer S under high temperature conditions, and avoiding collisions and scrapes between the wafer S and the wafer boat 10 when the wafer transfer device 30 transfers the wafer S, thus ensuring the process effect of the wafer S and improving the yield of the wafer S.
[0060] The crystal boat 10 is more conducive to carrying thinned wafers (thickness of about 0.08 mm). Since the thickness of the thinned wafer is small, the stability of the load can only be effectively guaranteed by supporting the edge of the thinned wafer. However, it is difficult to maintain the stability of the thinned wafer by only increasing the support area in the radial direction or other directions. Therefore, increasing the contact area and support area in the circumferential direction of the wafer can effectively improve the load-bearing stability of the thinned wafer.
[0061] In some embodiments, referring to Figures 1-2, the support frame 100 includes a support body 110, a bottom plate 130, and a top plate 120. The bottom plate 130 and the top plate 120 are respectively connected to the bottom and top ends of the support body 110. The support body 110, the bottom plate 130, and the top plate 120 together form a wafer carrying space. An opening a is provided in the support body 110, and the support body 110 can be an arc-shaped structure. Further, in some embodiments, the bottom plate 130 can be connected to the bottom end of the support body 110 by welding, bonding, or other methods, and the top plate 120 can be connected to the top end of the support body 110 by welding, bonding, or other methods. Referring to Figures 3 and 7, the bottom plate 130 is provided with a plurality of connection holes 131. The bottom plate 130 can be fixed to the process gate 20 using the connection holes 131, thereby connecting the wafer boat 10 to the process gate 20.
[0062] In some embodiments, in the height direction of the support frame 100, each support column 200 is provided with a plurality of wafer bearing surfaces 211 at intervals, and the wafer bearing surfaces 211 of each support column 200 correspond one-to-one, so that the support frame 100 supports multiple wafers S. With this arrangement, the number of wafer bearing surfaces 211 of each support column 200 is increased, and the crystal boat 10 can simultaneously transport and carry multiple wafers S, thereby allowing multiple wafers S to enter the reaction chamber 70 for processing at the same time, which is beneficial to improving process efficiency.
[0063] In some embodiments, the first support column 201 and the second support column 202 are arc-shaped columns, and the third support column 203 can be a square column. Of course, the third support column 203 can also have the same structure as the first support column 201, that is, the third support column 203 is an arc-shaped column; the top end of each support column 200 is connected to the top plate 120, and the bottom end of each support column 200 is connected to the bottom plate 130.
[0064] In a further embodiment, referring to Figures 4 and 13, in the height direction of the support frame 100, each support column 200 is provided with a plurality of slots 210 at intervals. The edge of the wafer S can extend into the slot 210. The slot wall surface of each slot 210 serves as the wafer bearing surface 211, and the slots 210 of each support column 200 correspond one-to-one, so that the support frame 100 supports a plurality of wafers S. Moreover, the slots 210 of the first support column 201 and the slots 210 of the second support column 202 extend in the direction surrounding the central axis, so that the slots 210 of the first support column 201 and the slots 210 of the second support column 202 are arc-shaped, thereby forming an arc-shaped wafer bearing surface 211.
[0065] In some embodiments, the groove 210 can be a square groove, and the groove 210 includes a groove top wall, a groove side wall and a groove bottom wall connected in sequence. The groove top wall is opposite to the groove bottom wall, and the groove bottom wall serves as the wafer support surface 211.
[0066] It should be noted that when wafer S is located within the wafer support space and wafer support surface 211 supports wafer S, the height direction of support frame 100 is the thickness direction of wafer S.
[0067] In this embodiment, each support post 200 directly forms a toothed groove 210 to form a wafer carrier surface 211. The support post 200 does not need to have multiple protrusions to form the wafer carrier surface 211, which simplifies the structure of the support post 200 and also simplifies the structure of the wafer boat 10.
[0068] In the scheme of this application, referring to Figures 8-13, the support frame 100 is provided with a guide hole 111. The guide hole 111 has a strip-shaped structure and extends circumferentially along the support frame 100, and is located between two adjacent support columns 200. In some embodiments, the guide hole 111 is provided on the support body 110. In embodiments where the support body 110 has an arc-shaped structure, the guide hole 111 can be an arc-shaped hole. In embodiments where the support body 110 has a square structure with an opening a, the guide hole 111 can be a straight strip-shaped hole. In general, the guide hole 111 extends in the horizontal direction.
[0069] In some embodiments, a flow guide hole 111 may be provided only between the first support column 201 and the third support column 203, or only between the second support column 202 and the third support column 203, or both adjacent support bodies 110 may be provided with a flow guide hole 111.
[0070] Semiconductor process equipment typically uses a fan 51 to generate cooling gas, which flows to the wafer S carried by the wafer boat 10 to cool the wafer S. In this embodiment, by providing a guide hole 111, the cooling gas entering the wafer carrying space is guided, so that the cooling gas flows in a direction parallel to the surface of the wafer S, avoiding the cooling gas exerting a large force on the wafer S, and thus avoiding the wafer S from shifting position due to airflow.
[0071] Of course, in other embodiments, the support frame 100 may not have the guide hole 111, and the cooling gas blown out by the air supply device 51 may flow in the horizontal direction.
[0072] In one embodiment, only one guide hole 111 may be provided between two adjacent support columns 200. Further, in some embodiments, a guide hole 111 is provided between the first support column 201 and the third support column 203, and a guide hole 111 is provided between the second support column 202 and the third support column 203.
[0073] In another embodiment, multiple guide holes 111 are spaced apart along the height direction of the support frame 100. When the crystal boat 10 carries the wafer S, the height direction of the support frame 100 is the thickness direction of the wafer S. Further, in some embodiments, multiple guide holes 111 may be provided only between the first support pillar 201 and the third support pillar 203, or only between the second support pillar 202 and the third support pillar 203, or multiple guide holes 111 may be provided between any two adjacent support pillars 200; the extension length of each guide hole 111 may be equal or unequal, and the structure of each guide hole 111 may be the same or different.
[0074] In this embodiment, the number of guide holes 111 increases in the height direction of the support frame 100. Each guide hole 111 guides the cooling gas entering different areas of the wafer carrier space, which helps to improve the guiding effect, further avoids the cooling gas from exerting force on the wafer S, and thus avoids the wafer S from shifting position, which is more conducive to improving the carrier stability of the wafer S.
[0075] In a further embodiment, along the height direction of the support frame 100, each support column 200 is provided with a plurality of wafer bearing surfaces 211 at intervals, and the wafer bearing surfaces 211 of each support column 200 correspond one-to-one, so that the support frame 100 supports multiple wafers S. That is, the support frame 100 supports multiple wafers S simultaneously, and the height direction of the support frame 100 is the arrangement direction of the wafers S. Therefore, in the arrangement direction of the wafers S, a plurality of guide holes 111 are provided at intervals.
[0076] With this configuration, the cooling gas entering the wafer support space flows horizontally to different wafers S through the guiding effect of multiple flow guide holes 111. This avoids the cooling gas in different areas exerting force on each wafer S separately, effectively preventing the position of each wafer S from shifting, and helps to improve the support stability of each wafer S.
[0077] In one embodiment, referring to FIG13, in the height direction of the support frame 100, the width of the guide hole 111 is H, the distance between two adjacent wafer support surfaces 211 is P, the guide hole 111 is located between two adjacent wafer support surfaces 211, and the distance between the guide hole 111 and its upper adjacent wafer support surface 211 is a first distance H1, and the distance between the guide hole 111 and its lower adjacent wafer support surface 211 is a second distance H2, the second distance H2 being greater than the first distance H1. Wherein, distance P = width H of guide hole 111 + first distance H1 + second distance H2. That is, the guide hole 111 is relatively close to the wafer support surface 211 above it, i.e., the guide hole 111 is relatively close to the lower surface of the wafer S above it, and relatively far from the upper surface of the wafer S below it.
[0078] In this embodiment, when the wafer carrier surface 211 supports the wafer S, since the flow guide hole 111 is relatively close to the wafer S located above it, the gas flow rate on the lower surface of the wafer S is greater than the gas flow rate on the upper surface of the wafer S. Therefore, the gas pressure on the lower surface of the wafer S is less than the gas pressure on the upper surface of the wafer S, resulting in a pressure difference between the upper and lower surfaces of the same wafer S. The wafer S bears a vertically downward pressure, which is beneficial for the wafer S to be stably located on the wafer carrier surface 211 and reduces the risk of wafer S slippage.
[0079] In another embodiment not shown in the figure, the second distance H2 is less than or equal to the first distance H1.
[0080] In some embodiments, referring to FIG15, the size of the wafer bearing surface 211 in the radial direction of the support frame 100 is less than 15 mm. When the support frame 100 carries the wafer S, the radial direction of the support frame 100 is the radial direction of the wafer S, and the radial direction of the support frame 100 is perpendicular to the central axis. That is, the size of the wafer bearing surface 211 in the radial direction of the wafer S is small, so the wafer bearing surface 211 is far from the central axis. Further, optionally in some embodiments, the size of the wafer bearing surface 211 of each support column 200 in the radial direction of the support frame 100 is less than 15 mm.
[0081] It should be noted that the size of the wafer support surface 211 in the radial direction of the support frame 100 is not infinitely small. In some embodiments, the size of the wafer support surface 211 in the radial direction of the support frame 100 ranges from 5mm to 15mm, or from 10mm to 15mm. Of course, it can also be any size between 15mm and other sizes (less than 15mm). That is to say, within a certain size range in the radial direction of the support frame 100, the size of the wafer support surface 211 must ensure that the edge of the wafer S can overlap the wafer support surface 211, so that the wafer support surface 211 can smoothly support the wafer S.
[0082] In the radial direction of wafer S, when the contact area between the wafer support surface 211 and wafer S is large, if wafer S warps, the warped area is prone to friction or collision with the support pillar 200. In this embodiment, since the wafer support surface 211 is far from the central axis (which corresponds to the center of wafer S), and the wafer support surface 211 is also far from the center of wafer S when it supports the wafer S, the contact area between the wafer support surface 211 and wafer S is small in the radial direction. Therefore, when wafer S warps, the warped area is less likely to rub or collide with the support pillar 200. Simultaneously, since the contact area between wafer S and the wafer support surface 211 is large in the circumferential direction of wafer S, it does not affect the stability of the wafer support.
[0083] Of course, in other embodiments, the size of the wafer bearing surface 211 in the radial direction of the support frame 100 may be greater than or equal to 15 mm.
[0084] In one embodiment, referring to FIG16, the central angle α corresponding to the wafer bearing surface 211 of at least one of the first support pillar 201 and the second support pillar 202 is greater than 25° along the direction surrounding the central axis.
[0085] In this embodiment, the extension length of the wafer bearing surface 211 of at least one of the first support pillar 201 and the second support pillar 202 is further increased. Therefore, when the crystal boat 10 carries the wafer S, the contact area and support area between the wafer bearing surface 211 and the edge of the wafer S are larger in the circumferential direction of the wafer S, which is more conducive to improving the bearing stability of the wafer S.
[0086] In another embodiment not shown in the figure, the central angle α corresponding to the wafer bearing surface 211 of at least one of the first support pillar 201 and the second support pillar 202 is less than 25° along the direction surrounding the central axis.
[0087] In one embodiment, referring to Figures 1-4, the number of third support columns 203 is one.
[0088] In another embodiment, referring to Figures 5-7, at least two third support pillars 203 are spaced apart along the direction surrounding the central axis. Further, in some embodiments, the number of third support pillars 203 is two, each third support pillar 203 is a square pillar, and each third support pillar 203 has multiple grooves 210 along the height direction of the support frame 100 to form multiple wafer bearing surfaces 211, and multiple guide holes 111 are provided between two adjacent third support pillars 203.
[0089] In this embodiment, the number of third support pillars 203 increases, thus increasing the number of wafer bearing surfaces 211 supporting the same wafer S. In the circumferential direction of wafer S, the contact area between the support pillars 200 and wafer S is further increased, which is more conducive to improving the bearing stability of wafer S.
[0090] Based on the crystal boat 10 disclosed in this application, and referring to Figures 17-20, this application also discloses a semiconductor process apparatus. The semiconductor process apparatus includes a wafer transfer device 30 and the crystal boat 10 in the above embodiments. The wafer transfer device 30 is used to pick up and place wafers S from the crystal boat 10. The wafer transfer device 30 may be, but is not limited to, a robotic arm.
[0091] In some embodiments, referring to FIG16, the width of opening a is X, which is greater than the width of wafer transfer device 30, to ensure that wafer transfer device 30 can pass smoothly through opening a and avoid collision between wafer transfer device 30 and first support post 201 and second support post 202. Furthermore, the distance Y between the groove sidewall of the toothed groove 210 of the first support post 201 and the groove sidewall of the toothed groove 210 of the second support post 202 is greater than the diameter of wafer S, to ensure that the two sides of wafer S can smoothly extend into the toothed grooves 210 of the first support post 201 and the second support post 202 respectively, avoiding collision between the edges of wafer S and first support post 201 and second support post 202.
[0092] In this embodiment, the semiconductor process equipment's crystal boat 10 employs a first support pillar 201 and a second support pillar 202 with a special structure. This increases the contact area between the wafer-bearing surface 211 of the first support pillar 201 and the wafer S in the circumferential direction, and also increases the contact area between the wafer-bearing surface 211 of the second support pillar 202 and the wafer S. This improves the load-bearing stability of the wafer S, effectively prevents the wafer S from shifting due to airflow, and effectively prevents the wafer S from warping under high-temperature conditions.
[0093] In some embodiments, referring to FIG14, the wafer transfer device 30 includes a first support arm 31 and a second support arm 32 opposite to each other, the first support arm 31 and the second support arm 32 supporting the same wafer S. Specifically, the front end and the rear end of the first support arm 31 and the second support arm 32 are respectively provided with two support regions 30a, and the four support regions 30a are used to support different positions of the same wafer S to ensure that the wafer transfer device 30 can stably transfer the wafer S.
[0094] Referring to Figure 16, the opening a has a first edge and a second edge. In the width direction of the opening a, there is a third distance X1 between the first edge and the third support post 203, and a fourth distance X2 between the second edge and the third support post 203. The third distance X1 is greater than the width of the first support arm 31, and the fourth distance X2 is greater than the width of the second support arm 32.
[0095] In some embodiments, the width of the first support arm 31 and the width of the second support arm 32 can be 5mm, and the third distance X1 and the fourth distance X2 are both greater than 5mm. Of course, the third distance X1 and the fourth distance X2 can also be greater than other values.
[0096] In this embodiment, when the wafer transfer device 30 extends into the wafer carrying space, the first support arm 31 moves within the range corresponding to the third distance X1, and the second support arm 32 moves within the range corresponding to the fourth distance X2. Therefore, the third distance X1 is greater than the width of the first support arm 31, and the fourth distance X2 is greater than the width of the second support arm 32. This facilitates the smooth movement of the first support arm 31 within the range corresponding to the third distance X1 without colliding with the third support column 203. It also facilitates the smooth movement of the second support arm 32 within the range corresponding to the fourth distance X2 without colliding with the third support column 203. This further facilitates the smooth transfer of the wafer S by the wafer transfer device 30.
[0097] In this embodiment, there are two third support columns 203. In the width direction of the opening a, the third distance X1 is the distance between the first edge and the third support column 203 adjacent to the first support column 201, and the fourth distance X2 is the distance between the second edge and the third support column 203 adjacent to the second support column 202.
[0098] In some embodiments, referring to Figures 17 and 19, the semiconductor process equipment further includes a process gate 20 and an air supply device 51. The process gate 20 is connected to the crystal boat 10 and can drive the crystal boat 10 to switch between a first rotational position and a second rotational position. Further, in some embodiments, the process gate 20 can be connected to the base plate 130 of the crystal boat 10 by welding, bonding, or other means. The air supply device 51 is used to generate cooling gas and can be, but is not limited to, a fan. Moreover, the support frame 100 is provided with a guide hole 111, which is a strip-shaped structure and extends circumferentially along the support frame 100, that is, it extends horizontally. Cooling gas can enter the interior of the crystal boat 10 through the guide hole 111.
[0099] Referring to Figures 17 and 18, when the crystal boat 10 is in the first rotational position, the opening a faces the wafer transfer device 30, and the wafer transfer device 30 takes the wafer S from the crystal boat 10. Referring to Figures 19 and 20, when the crystal boat 10 is in the second rotational position, the guide hole 111 faces the air supply device 51, and the cooling gas generated by the air supply device 51 enters the interior of the crystal boat 10 through the guide hole 111 to cool the wafer S carried by the crystal boat 10. Under the guiding effect of the guide hole 111, the cooling gas flows in the horizontal direction.
[0100] In some embodiments, the semiconductor process equipment further includes a reaction chamber 70 and a chassis 60. The reaction chamber 70 provides a process environment for the wafer S and is heated by a heating device 80, which may be, but is not limited to, a furnace. The chassis 60 is located in a microenvironment 61, and the reaction chamber 70 is connected to the microenvironment 61 of the chassis 60. The process door 20, the wafer boat 10, and the wafer transfer device 30 are all located inside the chassis 60. Referring to Figures 17 and 18, a wafer container opening device 40 is provided inside the chassis 60, and the wafer transfer device 30 is located between the wafer container opening device 40 and the wafer boat 10. The wafer transfer device 30 is used to transfer the wafer S between the wafer container opening device 40 and the wafer boat 10. Referring to Figures 19 and 20, an air supply device 51 and an air duct 52 are respectively provided on opposite sides inside the chassis 60. The cooling gas generated by the air supply device 51 flows to the air duct 52 after passing through the wafer boat 10.
[0101] Specifically, when the semiconductor process equipment starts the process, the process gate 20 first rotates the wafer boat 10 to the first rotation position, so that the wafer transfer device 30 takes the wafer S from the wafer container opening device 40 and transfers it to the wafer boat 10. Then, the process gate 20 drives the wafer boat 10 to rise into the reaction chamber 70, so that the wafer S undergoes the process in the reaction chamber 70. After the process of the wafer S is completed, the process gate 20 drives the wafer boat 10 to fall into the chassis 60 and drives the wafer boat 10 to rotate to the second rotation position. At this time, the air supply device 51 is turned on, and the cooling gas generated by the air supply device 51 flows directly to the guide hole 111. Under the guidance of the guide hole 111, the cooling gas flows horizontally to the wafer S in the wafer boat 10 and then flows into the air duct 52. After the cooling process is completed, the process gate 20 drives the wafer boat 10 to rotate back to the first rotation position, and the wafer transfer device 30 takes the wafer S from the wafer boat 10 and transfers it to the wafer container opening device 40. The above process is the complete process of wafer S, and the above process can be repeated.
[0102] By switching the rotation position of the wafer boat 10 through the process gate 20, the opening a can be directly opposite the wafer transport device 30 during the wafer S transfer process, and the guide hole 111 is directly opposite the air supply device 51 during the cooling process. This setting can improve the transfer efficiency of the wafer transport device 30 and the guiding effect of the guide hole 111 on the cooling gas, effectively preventing the wafer S from shifting during the cooling process, which is conducive to improving the yield of the wafer S and improving the production efficiency of the wafer S.
[0103] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.
Claims
1. A crystal boat, characterized in that, The device includes a support frame, which has a wafer carrying space inside and a central axis. The support frame is provided with at least three support columns spaced apart along the direction surrounding the central axis. Two adjacent support columns are a first support column and a second support column, respectively. An opening for a wafer transport device to pass through is formed between the first support column and the second support column, and the opening communicates with the wafer carrying space. Each of the support pillars is provided with a wafer bearing surface, and the wafer bearing surface of each support pillar can support the same wafer within the wafer bearing space. The wafer bearing surface of the first support pillar and the wafer bearing surface of the second support pillar extend along the direction surrounding the central axis.
2. The crystal boat according to claim 1, characterized in that, In the height direction of the support frame, each of the support columns is provided with a plurality of slots at intervals. The slot wall surface of each slot serves as the wafer bearing surface, and the slots of each support column correspond one-to-one, so that the support frame supports a plurality of wafers.
3. The crystal boat according to claim 1, characterized in that, The support frame is provided with a flow guide hole, which extends circumferentially along the support frame and is located between two adjacent support columns.
4. The crystal boat according to claim 3, characterized in that, Multiple guide holes are spaced apart along the height direction of the support frame.
5. The crystal boat according to claim 3, characterized in that, In the height direction of the support frame, each of the support columns is provided with a plurality of wafer bearing surfaces at intervals, and the wafer bearing surfaces of each support column correspond one-to-one so that the support frame supports a plurality of wafers. The guide hole is located between two adjacent wafer bearing surfaces, and the distance between the guide hole and the wafer bearing surface above it is a first distance, and the distance between the guide hole and the wafer bearing surface below it is a second distance, the second distance being greater than the first distance.
6. The crystal boat according to claim 1, characterized in that, The central angle α corresponding to the wafer bearing surface of at least one of the first support pillar and the second support pillar is greater than 25°.
7. The crystal boat according to claim 1, characterized in that, At least two third support columns are spaced apart along the direction surrounding the central axis.
8. A semiconductor process apparatus, characterized in that, The invention includes a wafer transport device and a crystal boat as described in any one of claims 1-7, wherein the wafer transport device is used to pick up and place the wafer from the crystal boat.
9. The semiconductor process equipment according to claim 8, characterized in that, The wafer transfer device includes a first support arm and a second support arm opposite to each other, the first support arm and the second support arm supporting the same wafer; The opening has a first edge and a second edge. In the width direction of the opening, there is a third distance between the first edge and the third support post, and a fourth distance between the second edge and the third support post. The third distance is greater than the width of the first support arm, and the fourth distance is greater than the width of the second support arm.
10. The semiconductor process equipment according to claim 9, characterized in that, The semiconductor process equipment also includes a process gate and an air supply device. The process gate is connected to the crystal boat and can drive the crystal boat to switch between a first rotation position and a second rotation position. The support frame is provided with a flow guide hole, which extends circumferentially along the support frame. With the crystal boat in the first rotational position, the opening faces the wafer transport device; When the crystal boat is in the second rotational position, the flow guide hole faces the air supply device.