Power electronics module and inverter comprising a power electronics module
The power electronics module addresses inefficiencies in space and cost by using isolated contact surfaces and parallel connections to reduce inductances and oscillations, enhancing reliability and stability.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- SCHAEFFLER TECHNOLOGIES AG & CO KG
- Filing Date
- 2025-12-02
- Publication Date
- 2026-07-23
AI Technical Summary
Existing power electronics modules are inefficient in reducing installation space and manufacturing costs while maintaining electrical stability and reliability.
A power electronics module design featuring electrically isolated contact surfaces and contact elements that connect power semiconductor switches in parallel, reducing wiring inductances and balancing load current distribution, thereby preventing high-frequency oscillations and enhancing mechanical stability.
The design achieves a compact and cost-effective power electronics module with reduced parasitic inductances, improved electrical connections, and increased reliability through balanced load current distribution and mechanical stability.
Smart Images
Figure DE2025101141_23072026_PF_FP_ABST
Abstract
Description
[0001] 202400769
[0002] 1
[0003] Description
[0004] Power electronics module, inverter with a power electronics module
[0005] Technical field:
[0006] The present invention relates to a power electronics module and an inverter, in particular a power inverter, with said power electronics module, especially for an electrically powered motor vehicle.
[0007] State of the art and object of the invention:
[0008] Power electronics modules for converting currents are well known and are used, among other things, as switching bridges for (power) inverters, especially in electric drives, e.g., of motor vehicles.
[0009] As with almost all technical devices, the general requirement for the aforementioned power electronics modules is to reduce installation space and manufacturing costs.
[0010] The purpose of this application is therefore to provide a way to manufacture a power electronics module in a compact and cost-effective manner.
[0011] Description of the invention:
[0012] This problem is solved by the subject matter of the independent claims. Advantageous embodiments are the subject matter of the dependent claims.
[0013] According to a first aspect of the invention, a power electronics module, in particular for a (power) inverter, is provided. 202400769
[0014] 2
[0015] The power electronics module has a first and a second electrical contact surface that are electrically isolated from each other (i.e., not electrically short-circuited or connected to the same voltage potential during operation of the power electronics module). Depending on the design, the power electronics module may have additional electrical contact surface(s) besides these two.
[0016] The power electronics module also includes at least two power semiconductor switches, e.g., a power electronics module based on silicon or silicon carbide (SiC) or gallium nitride (GaN), in particular in the form of
[0017] SiC MOSFETs, each with a bottom-side load current connection area and a top-side load current connection area, or, in the case of GaN, the load current connections are only provided on the top side. The power semiconductor switches rest on the first contact surface via their respective bottom-side load current connection areas and are electrically connected to this first contact surface (directly or only via an electrically conductive interconnect layer, such as a sintered or soldered layer).
[0018] The power electronics module also has at least one electrical contact element with at least two first connection sections and at least one second connection section. The contact element is electrically connected via its respective first connection sections to the top-side load current connection surface of the respective power semiconductor switches (directly or solely via an electrically conductive bonding layer, such as a sintered or soldered layer). Furthermore, the contact element is electrically connected via its second connection section to the second contact surface (directly or solely via an electrically conductive bonding layer, such as a sintered or soldered layer).
[0019] Preferably, the contact element forms exclusively electrical connections between the power semiconductor switches to each other and between the power semiconductor switches on the one hand and the second contact surface on the other hand, 202400769
[0020] 3
[0021] and is electrically connected exclusively to the aforementioned power semiconductor switches, specifically to their respective top-side load current connection surfaces and to the second contact surface mentioned above. In particular, the contact element is not directly (or merely via an electrically conductive bonding layer, such as a sintered, welded, or soldered layer, or via purely mechanical connecting elements, such as screws or rivets) to any other, especially external, conductor such as a busbar. Specifically, the contact element is not a busbar for establishing an external power connection from the power module to an external component. This fundamentally distinguishes the contact element from a commonly known busbar, which (primarily) establishes an external electrical connection from the power module to an external electrical component, such as an intermediate circuit capacitor.Nevertheless, the contact element can be manufactured in a similar way to a connecting rail.
[0022] Specifically, the power electronics module can have at least one sensor, such as a temperature sensor or a current sensor, which is directly (or only via an electrically conductive connecting layer, such as a sintered weld or solder layer, or via purely mechanical connecting elements, such as screws or rivets) connected (electrically) to the said contact element or is connected (electrically) to the contact element via measuring leads.
[0023] The contact element enables parallel connection of the power semiconductor switches between the two contact surfaces and simultaneously provides direct electrical connections between the top-side load current connection surfaces of the already parallel-connected power semiconductor switches. During operation of the power module, these direct electrical connections reduce wiring inductances (parasitic inductances) between these power semiconductor switches, thus reducing gate oscillations. Accordingly, these connections are similar to those in the 202400769
[0024] 4
[0025] The operation of the power module compensates for any uneven or asymmetrical load current distribution between the power semiconductor switches, thus balancing the power semiconductor switches and consequently preventing high-frequency oscillations in the load circuit of the respective power semiconductor switches, which ultimately reduces the power losses of the power module.
[0026] The contact element, as a prefabricated component with correspondingly pre-formed connection sections, which can be easily manufactured in large quantities, enables simple handling and reduces manufacturing steps in the assembly of the power module, thus lowering the power module's manufacturing costs. Because the contact element can be configured according to
[0027] The fact that the (performance) requirements and designs of the power module can be flexibly adapted and prefabricated increases the design flexibility of the power module.
[0028] The contact element replaces bond wires or bond tapes, which primarily establish electrical connections between the power semiconductor switches on the one hand and the contact surfaces on the other. Compared to bond wires or bond tapes, the contact element is (significantly) more mechanically stable and exhibits (significantly) higher thermomechanical cycle stability, thus increasing the stability and consequently the reliability of the electrical connections.
[0029] This provides a way to manufacture a power electronics module in a compact and cost-effective manner.
[0030] The power semiconductor switches are preferably connected in parallel between the first contact surface and the contact element, and thus between the two contact surfaces.
[0031] The power module can also include an (electrically insulating) support substrate, e.g. a ceramic substrate, such as a ceramic substrate with an electrically insulating ceramic layer and a conductor layer on the top side, e.g. 202400769
[0032] 5
[0033] The copper layer (and optionally with a conductive layer on the underside), in particular in the form of a DCB or AMB substrate, wherein at least one of the two contact surfaces, in particular both contact surfaces, are formed on the same surface of the substrate. If the two contact surfaces are formed on the same surface of the substrate, they are, for example, electrically separated from each other by a groove running between them.
[0034] The power module may also have a busbar, in which case one of the two contact surfaces may be located on the surface of the busbar. Alternatively, the power module may have two busbars, in which case one of the two contact surfaces may be located on each of the two busbars.
[0035] The contact element can have a central section extending in a longitudinal direction of the contact element, wherein the first connection sections of the contact element are arranged one behind the other on a first side of the central section in the longitudinal direction and the second connection section of the contact element is arranged on a second side of the central section facing away from the first side.
[0036] The central section of the contact element can have a spring area between two adjacent connection sections in the longitudinal direction, which resiliently supports the two adjacent connection sections relative to each other.
[0037] The first connection sections and / or the second connection section are preferably each integrally connected to the central section via a connecting section of the contact element, the connecting sections preferably providing resilient support for the respective connection sections relative to the central section. 202400769
[0038] 6
[0039] The aforementioned connecting section and the spring area compensate for manufacturing-related deviations between the above-mentioned components, namely the contact surfaces, the contact element and the power semiconductor switches, and thus serve to adjust tolerances.
[0040] The power module can furthermore have at least one first connecting web which extends between two connecting sections adjacent in the longitudinal direction, and in particular parallel to the central section, and directly connects these two adjacent connecting sections to each other.
[0041] Alternatively to or in addition to the at least one first connecting bridge, the power module may have at least one second connecting bridge which extends between two first connection sections adjacent in the longitudinal direction, and in particular parallel to the central section, and directly connects these two adjacent first connection sections to each other.
[0042] The connecting bridges shorten the current flow paths between the top-side load current connection surfaces of the (adjacent) parallel-connected power semiconductor switches, thereby further improving the previously described balancing effect of these power semiconductor switches and thus their switching capability.
[0043] The contact element can be shaped in a mirror-symmetrical manner around an axis of symmetry that extends transversely to the longitudinal direction.
[0044] The contact element can further comprise a plurality N of first connection sections and the same plurality N of second connection sections, wherein the first connection sections and the second connection sections are arranged in pairs opposite each other when viewed in the longitudinal direction. 202400769
[0045] 7
[0046] The first connection sections can each be divided into two parts by a gap extending transversely to the longitudinal direction, with the two parts of the respective first connection sections being electrically connected to the top-side load current connection surface of the same power semiconductor switch.
[0047] The contact element can be made of a) silver or b) a silver alloy or of c) copper or d) a copper alloy or of e) copper with a silver plating or coating or f) a copper alloy with a silver plating or coating. In particular, the contact element can be made of g) a copper-molybdenum alloy (or a composite of copper and molybdenum) or h) a copper-molybdenum alloy with a silver plating or coating.
[0048] The contact element, including all previously described sections and connecting webs, can be stamped or cut from a suitable sheet metal piece in one piece, or separated and bent accordingly in a similar manner. Alternatively, (only) the first connecting web for directly connecting two adjacent first connection sections can be a separately formed component (pre-formed), such as another stamped part made of the same material or a bonding strip, onto which, as described above, e.g.,
[0049] The contact element formed by the die-cutting process can be applied by, for example, welding, soldering, bonding or sintering.
[0050] The first connection sections of the contact element can each be sintered or soldered onto the respective top-side load current connection surfaces of the respective power semiconductor switches. Similarly, the second connection section of the contact element can be sintered or soldered onto the second contact surface.
[0051] According to a second aspect of the invention, an inverter, specifically a power inverter, is provided, for example for an electric drive of a motor vehicle. 202400769
[0052] 8
[0053] The inverter comprises at least one (preferably three or more) power electronics module as previously described and at least one (preferably three or more) control circuit, in particular a driver circuit, e.g. a gate driver, for controlling the power electronics module, wherein the control circuit is electrically connected to the power electronics module by means of at least one control signal connection.
[0054] Brief description of the drawings:
[0055] An exemplary embodiment of the invention is explained in more detail below with reference to the accompanying drawing. The drawing shows:
[0056] Figure 1 shows a schematic perspective view of a first contact element for a power module according to a first exemplary embodiment of the invention;
[0057] Figure 2 shows a schematic top view of a power module with several first contact elements from Figure 1;
[0058] Figure 3 shows a second contact element for a power module according to a second exemplary embodiment of the invention in a further schematic perspective view;
[0059] Figure 4 shows a further schematic top view of another power module with several second contact elements from Figure 3; and
[0060] Figure 5 shows a third contact element for a power module according to a third exemplary embodiment of the invention in yet another schematic perspective view.
[0061] Detailed description of the drawings: 202400769
[0062] 9
[0063] Figure 1 shows in a schematic perspective view a first contact element KE1 for a power module according to a first exemplary embodiment of the invention.
[0064] The first contact element KE1 is formed as a (flexible) stamped and bent part made from a sheet of copper or a copper alloy with a (double-sided) silver plating or a (double-sided) silver coating.
[0065] The first contact element KE1 has a central section MA extending in a longitudinal direction LR1 of the contact element KE1, as well as two first connection sections A1 and two second connection sections A2, wherein the two first connection sections A1 are arranged one behind the other on a first side of the central section MA in the longitudinal direction LR1, and the two second connection sections A2 are arranged one behind the other on a second side of the central section MA opposite the first side in the longitudinal direction LR1. The first connection sections A1 and the second connection sections A2 are arranged in pairs opposite each other when viewed in the longitudinal direction LR1.
[0066] Between the respective first and second connection sections A1, A2 on the one hand and the central section MA on the other hand, the first contact element KE1 also has a connecting section VA, wherein the connecting sections VA each connect the respective connection sections A1, A2 to the central section MA in one piece and also resiliently support the respective connection sections A1, A2 (thanks to the bending elasticity of the connecting sections VA or the contact element KE1) relative to the central section MA.
[0067] The central section MA has a spring area FB between the two adjacent connection sections A1 and A2 in the longitudinal direction LR1 (or the adjacent pairs of connection sections consisting of a first and a second connection section A1 and A2), which the202400769
[0068] 10
[0069] The two adjacent connection sections A1 and A2, or the adjacent pairs of connection sections, are resiliently mounted relative to each other.
[0070] The two first connection sections A1 each have a gap SP extending transversely to the longitudinal direction LR1, which divides the respective first connection section A1 into two parts of equal width, extending transversely to the longitudinal direction LR1 and parallel to each other. Depending on the design, the gaps SP extend to the central section MA and thus also divide the respective connecting sections VA, which connect the respective first connection sections A1 to the central section MA, into two parts of equal width, extending transversely to the longitudinal direction LR1 and parallel to each other, as illustrated in Figure 1.
[0071] In total, the contact element KE1 is shaped in a mirror-symmetric form around an axis of symmetry SY, which extends transversely to the longitudinal direction LR1.
[0072] The first contact element KE1 serves to create electrical contacts, as described in more detail below with reference to Figure 2:
[0073] Figure 2 shows a schematic top view of a power module LM1 with several previously described first contact elements KE1 from Figure 1.
[0074] The LM1 power module, for example, is part of a power inverter for providing phase currents for an electric motor in a motor vehicle's electric drive. Depending on the version, the power inverter can...
[0075] The power requirement includes several, in particular three, six or nine, power modules LM1 for providing several, in particular three, six or nine. In addition to the power modules LM1, the power inverter has one or more control electronic arrangements for operating the power modules LM1, which are electrically connected to the (respective) power modules LM1 via signal connections. 202400769
[0076] 11
[0077] The power module LM1 has an (electrically insulating) carrier substrate TS, on the surface of which a first F1, a second F2, three third F3, and further electrical contact surfaces, e.g., made of copper or a copper alloy, are formed, arranged next to each other and (electrically) separated from each other by grooves running between them. The first and second contact surfaces F1, F2 extend essentially parallel to each other in a longitudinal direction LR2 of the carrier substrate TS.
[0078] The three third contact surfaces F3 are arranged between the first and second contact surfaces F1 and F2. The second contact surface F2 has four surface sections F2A, which extend from a main area F2B of the second contact surface F2 transversely to the longitudinal direction LR2 towards the first contact surface F1. The four surface sections F2A and the three third contact surfaces F3 are arranged alternately one behind the other in the longitudinal direction LR2 of the support substrate TS.
[0079] The first, second, and third contact surfaces F1, F2, and F3 form connection surfaces for "H+", phase, and "H-" connections, respectively. The remaining contact surfaces form signal connection surfaces for control signals.
[0080] Measurement signal connections.
[0081] The power module LM1 further comprises six first power semiconductor switches T1 in the form of SiC MOSFETs, all of which are arranged sequentially on the first contact surface F1 in the longitudinal direction LR2 of the substrate TS. Each first power semiconductor switch T1 has a bottom-side load current connection surface (or drain connection surface) and a top-side load current connection surface L1 (or source connection surface), as well as several signal connection surfaces (or gate and Kelvin source connection surfaces). These signal connections are located on the first contact surface F1 via their respective bottom-side load current connection surfaces and are electrically connected to them. The top-side load current connection surface L1, or the source connection surface, of each first power semiconductor switch T1 is formed from two parallel contact strips.
[0082] 12
[0083] The power module LM1 further comprises six secondary power semiconductor switches T2, also in the form of SiC MOSFETs, all of which are arranged sequentially on the second contact surface F2, or rather on its main area F2B, in the longitudinal direction LR2 of the substrate TS. Like the first power semiconductor switches T1, the secondary power semiconductor switches T2 each have a bottom-side load current connection surface (or drain connection surface) and a top-side load current connection surface L2 (or source connection surface), as well as several signal connection surfaces (or gate and Kelvin source connection surfaces). Each of these rests on the second contact surface F2, or rather on its main area F2B, via its respective bottom-side load current connection surface, and is also electrically connected to it. The top-side load current connection surface L2, or rather...The source contact surface of each second power semiconductor switch T2 is formed from two contact strips arranged parallel to each other.
[0084] The power module LM1 also has five previously described first contact elements KE1.
[0085] Three of these first contact elements KE1 are each electrically connected via their respective first connection sections A1 to the top-side load current connection surface L1 of one of the six first power semiconductor switches T1. Thus, these three first contact elements KE1 are each electrically connected (via their respective first connection sections A1) to two adjacent first power semiconductor switches T1. The two parts of each first connection section A1 of the respective first contact elements KE1, separated by a gap SP, are each electrically connected to one of the two contact strips of the top-side load current connection surface L1 of the same first power semiconductor switch T1.
[0086] The three first contact elements KE1 are also electrically connected via one of each of the two second connection sections A2 to one of the three of the four surface sections F2A and thus to the second contact surface F2. (See 202400769.)
[0087] 13
[0088] The three first contact elements KE1 are also electrically connected to each of the other two second connection sections A2 with one of the four surface sections F2A. Thus, these three first contact elements KE1 are each (via their respective second connection sections A2) electrically connected to two adjacent surface sections F2A.
[0089] The first power semiconductor switches T1 are thus connected in parallel in pairs between the first contact surface F1 and each of these three first contact elements KE1 (First parallel connection of the first power semiconductor switches T1). Furthermore, the first power semiconductor switches T1 are connected in parallel between the first and second contact surfaces F1 and F2 via the electrical connections of the first contact elements KE1 to the second contact surface F2 (Second parallel connection of the first power semiconductor switches T1).
[0090] The two remaining first contact elements KE1 of the five are each electrically connected via their respective first connection sections A1 to the top-side load current connection surface L2 of one of the four middle (or located in the middle area of the main section F2B) of the six second power semiconductor switches T2. Thus, these two first contact elements KE1 are each electrically connected (via their respective first connection sections A1) to two adjacent second power semiconductor switches T2. The two parts of each first connection section A1 of each first contact element KE1 are each electrically connected to one of the two contact strips of the top-side load current connection surface L2 of the same second power semiconductor switch T2.
[0091] The four middle of the six second power semiconductor switches T2 are thus connected in pairs in parallel between the second contact surface F2 and each of the two remaining of the five first contact elements KE1 (First parallel connection of the second power semiconductor switches T2 or parts thereof). 202400769
[0092] 14
[0093] These two first contact elements KE1 are each electrically connected to one of the three third contact surfaces F3 via one of the two second connection sections A2. Furthermore, these two first contact elements KE1 are each electrically connected to one of the other three third contact surfaces F3 via the other of the two second connection sections A2. Thus, these two remaining first contact elements KE1 are each electrically connected (via their respective second connection sections A2) to two adjacent third contact surfaces F3.
[0094] The power module LM1 also features two additional contact elements KE3, which, like the first contact elements KE1 described above, are also (flexible) stamped and bent parts made from a sheet of copper or a copper alloy, in particular a copper-molybdenum alloy, with a (double-sided) silver plating or a (double-sided) silver coating. These additional contact elements KE3 are shaped similarly to bonding strips and each has a first and a second connection section, a middle section between these two connection sections, and two connecting sections, with each of the two connecting sections integrally joining one of the two connection sections to the middle section.The first connection section of each contact element KE3 has a gap extending in one longitudinal direction, dividing the first connection section into two parts of equal width that extend parallel to each other in the longitudinal direction. Depending on the design, the gap extends to the middle section, thus also dividing the connection section into two parts of equal width.
[0095] The two additional contact elements KE3 are each electrically connected via their respective first connection section to the top-side load current connection surface L2 of one of the two remaining outer (or located in the outer area of the main area F2B) of the six second power semiconductor switches T2. The two parts of the first connection section of each additional contact element KE3 are each connected to one of the two 202400769
[0096] 15
[0097] Contact strips of the top-side load current connection surface L2 of the same second power semiconductor switch T2 are (electrically) connected.
[0098] These two contact elements KE3 are further connected (electrically) via their respective second connection section to one of the two outer three third contact surfaces F3.
[0099] The electrical connections described above between the respective power semiconductor switches T1, T2 or their respective bottom-side load current connection surface on the one hand and the respective corresponding contact surfaces F1, F2 on the other hand are formed as sintered bonds or soldered connections.
[0100] Similarly, the electrical connections between the respective power semiconductor switches T1, T2 or their respective top-side load current connection surface on the one hand and the respective corresponding contact elements KE1, KE3 or their respective first connection sections A1 on the other hand are formed as sintered bonds or soldered connections.
[0101] The first, second, and third contact surfaces F1, F2, and F3 each have one or more connection points AS for connecting H+ / H- / phase busbars (power busbars). The electrical connections between the respective contact surfaces F1, F2, and F3 on the one hand and the respective corresponding busbars on the other hand are formed by welded connections, sintered bonds, or soldered connections.
[0102] In this process, one "H+" busbar is electrically connected to the connection points AS of the first contact surface F1, one phase busbar to the connection points AS of the second contact surface F2, and one "H-" busbar to the connection points AS of all third contact surfaces F3. If the "H" busbar is electrically connected to all third contact surfaces F3, then the second power semiconductor switches T2 are located between the "H" busbar and thus the third contact surfaces F3 on the one hand, and the second contact surface F2 on the other.
[0103] 16
[0104] connected in parallel to each other (second parallel connection of the second power semiconductor switches T2).
[0105] The previously described first parallel connections of the first power semiconductor switches T1 to each other, or of the second power semiconductor switches T2 (or parts thereof) to each other, directly connect the top-side load current connection pads L1 (or source connection pads) of the first power semiconductor switches T1, or the top-side load current connection pads L2 (or source connection pads) of the second power semiconductor switches T2 (or parts thereof) to each other electrically (or short-circuit them electrically), thus forming so-called source cross-current connections. During operation of the power module LM1, these source cross-current connections reduce wiring inductances (parasitic inductances) between the parallel-connected power semiconductor switches T1 and T2, and thus reduce gate oscillations in these power semiconductor switches T1 and T2.Accordingly, these source cross-current connections compensate for any uneven or asymmetrical load current distribution between the first and second power semiconductor switches T1 and T2 during operation of the power module LM1, thus balancing the first and second power semiconductor switches T1 and T2 respectively and consequently preventing high-frequency oscillations in the source-drain circuit of the respective power semiconductor switches T1 and T2.
[0106] The previously described second parallel circuits of the first power semiconductor switches T1 to each other or of the second power semiconductor switches T2 (or parts thereof) to each other form the actual parallel circuits of the corresponding power semiconductor switches T1 and T2 for distributing the load current load or the power of the power module LM1.202400769
[0107] 17
[0108] Figure 3 shows in a further schematic perspective view a second contact element KE2 for a power module according to a second exemplary embodiment of the invention.
[0109] The second contact element KE2 differs from the previously described first contact element KE1 from Figure 1 (essentially or only) in that the second contact element KE2 has six first connection sections A1 instead of two, and analogously, six second connection sections A2 instead of two. The six first connection sections A1 are arranged one behind the other on a first side of a central section MA of the second contact element KE2 in its longitudinal direction LR1, and the six second connection sections A2 are arranged one behind the other on a second side of the central section MA opposite the first side in the longitudinal direction LR1. The first connection sections A1 and the second connection sections A2 are also arranged in pairs opposite each other when viewed in the longitudinal direction LR1.
[0110] Between the respective first and second connection sections A1, A2 on the one hand and the central section MA on the other hand, the second contact element KE2 has a connecting section VA in each case, wherein the connecting sections VA connect the respective connection sections A1, A2 to the central section MA in one piece and also resiliently support the respective connection sections A1, A2 (thanks to the bending elasticity of the connecting sections VA or the contact element KE2) relative to the central section MA.
[0111] The central section MA has a spring section FB between each pair of adjacent connection sections A1 and A2 in the longitudinal direction LR1 (or between each pair of adjacent connection sections, each consisting of a first and a second connection section A1 and A2) which resiliently supports the two adjacent connection sections A1 and A2, or the two adjacent pairs of connection sections, relative to each other. 202400769
[0112] 18
[0113] The six first connection sections A1 each have a gap SP extending transversely to the longitudinal direction LR1, which divides the respective first connection section A1 into two equally wide parts extending transversely to the longitudinal direction LR1 and parallel to each other.
[0114] Like the contact element KE1 described above with reference to Figure 1, the contact element KE2 is shaped in a mirror-symmetric form about an axis of symmetry SY, which extends transversely to the longitudinal direction LR1.
[0115] Like the first contact element KE1, the second contact element KE2 serves to create electrical contacts, as described in more detail below with reference to Figure 4:
[0116] Figure 4 shows in a further schematic top view a power module LM2 with several previously described first contact elements KE1 from Figure 1.
[0117] The power module LM2 from Figure 4 differs from the power module LM1 from Figure 2 essentially in that, instead of the first contact elements KE1 with two first and second connection sections A1, A2 and the further contact elements KE3 with one first and second connection section each, it only has two previously described second contact elements KE2.
[0118] One of the two second contact elements KE2 is electrically connected via its six first connection sections A1 to the top-side load current connection surfaces L1 of the six first power semiconductor switches T1. The contact element KE2 is further electrically connected via its six second connection sections A2 to the surface sections F2A of the second contact surface F2.
[0119] Another of the two second contact elements KE2 is (electrically) connected via its six first connection sections A1 to the top-side load current connection surface L2 of the six second power semiconductor switches T2. Via its 202400769
[0120] 19
[0121] The contact element KE2 is further connected (electrically) to the three third contact surfaces F3 via the six second connection sections A2.
[0122] The two second contact elements KE2 each directly connect the top-side load current connection surfaces L1 (or source connection surfaces) of all six first power semiconductor switches T1 to each other electrically, or the top-side load current connection surfaces L2 (or source connection surfaces) of all six second power semiconductor switches T2 to each other electrically, thus establishing source cross-current connections of all six first power semiconductor switches T1 or all six second power semiconductor switches T2.
[0123] Source cross-current connections balance all first and all second power semiconductor switches T1 and T2 respectively during operation of the power module LM2.
[0124] Figure 5 shows in a further schematic perspective view a third contact element KE3 for a power module according to a third exemplary embodiment of the invention.
[0125] The third contact element KE3 differs from the previously described first contact element KE1 from Figure 1 (essentially or only) in that the third contact element KE3 has a connecting web VS which extends in the longitudinal direction LR1 (and thus parallel to the central section MA) between the two connecting sections VA and directly connects these two adjacent connecting sections VA to each other.
[0126] The contact elements KE1, KE2 and KE3 described above, together with all previously described sections MA, A1, A2, VA, including the previously described connecting bridge VS, can be stamped from a corresponding sheet metal piece and bent accordingly.
Claims
202400769 20 Patent claims 1. Power module (LM1, LM2), comprising: - a first (F1 ) and a second (F2) electrical contact surface that are electrically separated from each other; - at least two power semiconductor switches (T 1 , T2) each with a bottom-side load current connection surface and a top-side load current connection surface (L1 , L2), wherein the power semiconductor switches are each connected to the first contact surface (F1) via their respective bottom-side load current connection surface; - at least one contact element (KE1, KE2, KE3) made of an electrically conductive material, having at least two first connection sections (A1) and at least one second connection section (A2), - wherein the contact element (KE1 , KE2, KE3) is connected via the respective first connection sections (A1) to the top-side load current connection surface (L1, L2) of the respective power semiconductor switches (T1, T2), and is connected via the second connection section (A2) to the second contact surface (F2).
2. Power module (LM1 , LM2) according to claim 1 , wherein the power semiconductor switches (T1, T2) are connected in parallel to each other between the first contact surface (F1) and the contact element (KE1, KE2, KE3).
3. Power module (LM1 , LM2) according to claim 1 or 2, further comprising a carrier substrate (TS), wherein the first (F1) and / or the second (F2) contact surface are formed on the same surface of the carrier substrate (TS).
4. Power module (LM1, LM2) according to one of the preceding claims, further comprising a power connection rail, wherein the first (F1) or the second (F2) contact surface is formed on the surface of the power connection rail. 202400769 21 5. Power module (LM1 , LM2) according to one of the preceding claims, wherein the contact element (KE1, KE2, KE3) has a central section (MA) extending in a longitudinal direction (LR1) of the contact element (KE1, KE2, KE3), wherein the first connection sections (A1) are arranged one behind the other on a first side of the central section (MA) in the longitudinal direction (LR1) and the second connection section (A2) is arranged on a second side of the central section (MA) facing away from the first side.
6. Power module (LM1 , LM2) according to claim 5, wherein the central section (MA) between two adjacent connection sections (A1 , A2) in the longitudinal extension direction (LR1) has a spring area (FB) which resiliently supports the two adjacent connection sections (A1, A2) relative to each other.
7. Power module (LM1 , LM2) according to claim 5 or 6, wherein the contact element (KE1, KE2, KE3) has connecting sections (VA) which each integrally connect the respective connection sections (A1, A2) to the central section (MA), wherein the connecting sections (VA) resiliently support the respective connection sections (A1, A2) relative to the central section (MA).
8. Power module (LM1 , LM2) according to claim 7, wherein the contact element (KE3) has at least one first connecting web (VS) which extends between two adjacent connecting sections (VA) in the longitudinal direction (LR1) and directly connects these two adjacent connecting sections (VA) to each other.
9. Power module (LM1, LM2) according to one of the preceding claims, wherein the contact element has at least one second connecting web extending between two first connection sections adjacent in the longitudinal direction and directly connecting these two adjacent first connection sections to each other. 202400769 22 10. Power module (LM1, LM2) according to one of the preceding claims, wherein the contact element (KE1, KE2, KE3) is shaped in a mirror-symmetric form about an axis of symmetry (SY) which extends transversely to the longitudinal direction (LR1).
11. Power module (LM1 , LM2) according to one of the preceding claims, wherein the contact element (KE1 , KE2 , KE3) further comprises a plurality N of first connection sections (A1) and the same plurality N of second connection sections (A2), wherein the first connection sections (A1) and the second connection sections (A2) are arranged in pairs opposite each other when viewed in the longitudinal direction (LR1).
12. Power module (LM1, LM2) according to one of the preceding claims, wherein the first connection sections (A1 ) are each divided into two parts by a gap extending transversely to the longitudinal direction (LR1), wherein the two parts of the respective first connection sections (A1) are connected to the top-side load current connection surface (L1) of the same power semiconductor switch (T1 or T2).
13. Power module (LM1, LM2) according to one of the preceding claims, wherein the contact element (KE1 , KE2, KE3) is formed of silver or a silver alloy or of copper or a copper alloy or of copper with a silver plating or of a copper alloy with a silver plating.
14. Power module (LM1, LM2) according to one of the preceding claims, wherein the contact element (KE1, KE2, KE3) is made of a formed from a copper-molybdenum alloy or a copper-molybdenum alloy with a silver plating. 202400769 23 15. Power module (LM1, LM2) according to one of the preceding claims, wherein the first connection sections (A1) of the contact element (KE1, KE2, KE3) are each sintered or soldered onto the respective top-side load current connection surfaces (L1, L2) of the respective power semiconductor switches, and / or the second connection section (A2) of the contact element (KE1, KE2, KE3) is sintered or soldered onto the second contact surface (F2).
16. Inverter, comprising: - at least one performance module according to one of the preceding claims; - at least one control electronics arrangement for operating the power module, which is electrically connected to the power module via at least one signal connection.