Semiconductor manufacturing apparatus, push-up method, and method for manufacturing semiconductor device

Abstract

The present invention provides technology capable of facilitating setting of a push-up sequence.　This semiconductor manufacturing apparatus includes: a push-up unit having a plurality of blocks, each of the plurality of blocks being independently vertically movable; a vertically movable head having a collet for chucking a die; and a controller constituting a push-up sequence of the plurality of blocks by a plurality of steps, capable of setting a plurality of push-up parameters by inputting one of setting items of a setting screen capable of inputting heights of the plurality of blocks for each step, and configured to control operations of the plurality of blocks based on the plurality of set push-up parameters.

Description

Semiconductor manufacturing apparatus, pushing-up method, and semiconductor device manufacturing method

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[0001] The present disclosure relates to a semiconductor manufacturing apparatus and is applicable, for example, to a dicing machine having a pushing-up unit.

[0002] As one step of the semiconductor device manufacturing process, there is a peeling step of peeling a die separated from a wafer from a dicing tape. In the peeling step, for example, the die is peeled one by one from the dicing tape by a pushing-up unit from the back surface of the dicing tape held by the wafer supply unit, and the die is picked up using a suction nozzle such as a collet provided on a pickup head or a bond head.

[0003] The pushing-up unit is configured such that, for example, each of a plurality of blocks can operate independently. The operation order (pushing-up sequence) and the pushing-up amount of each block can be changed (for example, see Patent Document 1).

[0004] Japanese Patent Application Laid-Open No. 2017-224640

[0005] An object of the present disclosure is to provide a technique capable of easily setting a pushing-up sequence. Other objects and novel features will become apparent from the description of this specification and the accompanying drawings.

[0006] The outline of a representative example of the present disclosure is as follows. A semiconductor manufacturing apparatus includes a pushing-up unit having a plurality of blocks, each of the plurality of blocks being capable of moving up and down independently, a head having a collet for adsorbing a die and capable of moving up and down, a pushing-up sequence of the plurality of blocks is composed of a plurality of steps, and a plurality of pushing-up parameters can be set by inputting one of the setting items of a setting screen in which the height of the plurality of blocks can be input for each step, and a control unit configured to be able to control the operation of the plurality of blocks based on the plurality of set pushing-up parameters.

[0007] According to the present disclosure, it is possible to easily set a pushing-up sequence.

[0008] Figure 1 is a diagram illustrating the configuration of a die bonder. Figure 2 is a diagram illustrating the configuration of a die bonder. Figure 3 is a diagram illustrating the manufacturing method of a semiconductor device. Figure 4 is a diagram illustrating a push-up unit. Figure 5 is a diagram illustrating a push-up unit. Figure 6 is a diagram illustrating the RMS push-up sequence. Figure 7 is a diagram illustrating the RMS push-up sequence. Figure 8 is a diagram illustrating the flow of setting a time chart recipe using the setting screen. Figure 9 is a diagram illustrating an example of the settings screen for inverse multi-stage operation. Figure 10 is a diagram illustrating the block operation of the push-up sequence based on the setting values ​​of the setting screen shown in Figure 9. Figure 11 is a diagram illustrating another example of the settings screen for inverse multi-stage operation. Figure 12 is a diagram illustrating the block operation of the push-up sequence based on the setting values ​​of the setting screen shown in Figure 11. Figure 13 is a diagram illustrating an example of the settings screen for general-purpose operation. Figure 14 is a diagram illustrating another example of the settings screen for general-purpose operation. Figure 15 is a diagram illustrating the block operation of the push-up sequence based on the setting values ​​of the setting screen shown in Figure 14.

[0009] The embodiments will be described below with reference to the drawings. However, in the following description, the same reference numerals will be used for identical components, and repeated explanations may be omitted. In addition, to make the explanation clearer, the drawings may schematically represent the width, thickness, shape, etc. of each part compared to the actual embodiment. Furthermore, the dimensional relationships and ratios of each element do not necessarily match between multiple drawings.

[0010] [Configuration of Semiconductor Manufacturing Equipment] Figure 1 is a schematic top view showing an example of the configuration of a die bonder in an embodiment. Figure 2 is a diagram showing the schematic configuration as viewed from the direction of arrow A in Figure 1.

[0011] As shown in Figures 1 and 2, the die bonder 1 broadly comprises a wafer supply unit 10, a pickup unit 20, an intermediate stage unit 30, a bonding unit 40, a transport unit 50, a substrate supply unit 60, a substrate unloading unit 70, and a control unit 80. The Y2-Y1 direction (Y direction) is the front-to-back direction of the die bonder 1, the X2-X1 direction (X direction) is the left-to-right direction, and the Z1-Z2 direction (Z direction) is the up-and-down direction. The wafer supply unit 10 is located on the front side of the die bonder 1, and the bonding unit 40 is located on the rear side. Here, the X, Y, and Z directions are orthogonal to each other.

[0012] As shown in Figure 1, the wafer supply unit 10 includes a wafer cassette lifter 11, a wafer holding base 12, and a push-up unit 13.

[0013] The wafer cassette lifter 11 moves a wafer cassette (not shown) containing multiple wafer rings WR up and down to the wafer transport height. The wafer correction chute (not shown) aligns the wafer rings WR supplied from the wafer cassette lifter 11. The wafer extractor (not shown) removes the wafer rings WR from the wafer cassette and supplies them to the wafer holder 12, or removes them from the wafer holder 12 and stores them in the wafer cassette.

[0014] A wafer W is bonded (attached) to a dicing tape DT, and the wafer W is divided into multiple dies D. The dicing tape DT is held in a wafer ring WR. The wafer W is, for example, a semiconductor wafer, and the dies D are semiconductor chips. A film-like adhesive material called a die attach film (DAF) is attached between the wafer W and the dicing tape DT. The adhesive material hardens when heated.

[0015] The wafer holder 12 moves in the X and Y directions. This moves the wafer ring WR so that the die D to be picked up is in a predetermined position on the push-up unit 13. The wafer holder 12 also rotates the wafer ring WR in the XY plane. The push-up unit 13 moves in the vertical direction. The push-up unit 13 peels the die D from the dicing tape DT. The wafer holder 12 and the push-up unit 13 constitute a pickup device (semiconductor manufacturing equipment). A pickup unit 20 may be included in the pickup device.

[0016] As shown in Figures 1 and 2, the pickup unit 20 includes a pickup head 21, a pickup head table 23, and a wafer recognition camera 24. The pickup head 21 is provided with a collet 22 that adsorbs and holds the die D peeled off from the dicing tape DT at its tip. The pickup head 21 picks up the die D from the wafer supply unit 10 and places it on the intermediate stage 31. The pickup head table 23 moves the pickup head 21 in the Y direction. The pickup head table 23 is provided with drive units (not shown) that raise, lower, rotate, and move the pickup head 21 in the X direction. The wafer recognition camera 24 recognizes the pickup position of the die D picked up from the wafer W and performs visual inspection of the die D.

[0017] As shown in Figures 1 and 2, the intermediate stage section 30 includes an intermediate stage 31 on which the die D is placed, and a stage recognition camera 34 for recognizing the die D on the intermediate stage 31. The intermediate stage 31 is equipped with suction holes for adsorbing the placed die D. The placed die D is temporarily held on the intermediate stage 31.

[0018] As shown in Figures 1 and 2, the bonding unit 40 includes a bond head 41, a bond head table 43, a substrate recognition camera 44, and a bond stage 46. The bond head 41 is provided with a collet 42 for adsorbing and holding the die D at its tip. The bond head table 43 moves the bond head 41 in the Y direction. The bond head table 43 is provided with drive units (not shown) for raising and lowering, rotating, and moving the bond head 41 in the X direction. The substrate recognition camera 44 photographs the substrate S and recognizes the bond position. The bond stage 46 is raised when the die D is placed on the substrate S to support the substrate S from below. The bond stage 46 has a suction port (not shown) for vacuum adsorption of the substrate S, and can fix the substrate S in place. The bond stage 46 has a heating unit (not shown) for heating the substrate S.

[0019] Here, the substrate S can be, for example, a wiring board, a lead frame, or a glass substrate. Multiple product areas are formed on the substrate S. These product areas ultimately form a single package. The product area is hereafter referred to as the package area P. In addition, position recognition marks (not shown) for the package area P are formed on the substrate S.

[0020] With this configuration, the bond head 41 corrects its pickup position and orientation based on the data captured by the stage recognition camera 34 and picks up the die D from the intermediate stage 31. Then, the bond head 41 bonds the die D onto the package area P of the substrate S based on the data captured by the substrate recognition camera 44, or bonds it in a layered manner on top of a die that has already been bonded to the package area P of the substrate S.

[0021] As shown in Figure 1, the transport unit 50 has transport claws 51 that grasp and transport the substrate S, and a transport lane 52 on which the substrate S moves. The substrate S moves in the X1 direction by driving nuts (not shown) of the transport claws 51 provided on the transport lane 52 with ball screws (not shown) provided along the transport lane 52. With this configuration, the substrate S moves from the substrate supply unit 60 along the transport lane 52 to the bonding position, and after the die D is bonded, it moves to the substrate discharge unit 70 and is handed over to the substrate discharge unit 70.

[0022] The substrate supply unit 60 takes out the substrates S that have been stored in a transport jig (not shown) and supplied them to the transport unit 50. The substrate discharge unit 70 stores the substrates S that have been transported by the transport unit 50 into the transport jig.

[0023] As shown in Figure 1, the control unit 80 is configured as a computer having a CPU (Central Processing Unit) 81, a storage device 82, and an input / output device 83. The storage device 82 has a main memory 82a and an auxiliary storage device 82b. The main memory 82a is composed of RAM (Random Access Memory) that stores processing programs and the like. The auxiliary storage device 82b is composed of an HDD (Hard Disk Drive) or SSD (Solid State Drive) that stores control programs, process recipes, control data and image data necessary for control, etc. The process recipe is a combination of procedures and conditions in the semiconductor device manufacturing process, which will be described later, that cause the control unit 80 to execute and obtain predetermined results, and functions as a program.

[0024] The input / output device 83 includes an image acquisition device 83a, a motor control device 83b, an I / O signal control device 83c, a monitor 83d, a touch panel 83e, and a mouse 83f. The image acquisition device 83a acquires image data from an optical system such as a wafer recognition camera 24. The motor control device 83b controls the drive units of the wafer supply unit 10, such as the XY table (not shown), the pickup head table 23, and the bond head table 43. The I / O signal control device 83c acquires signals from various sensors and outputs electrical signals to control the device. The monitor 83d displays the device status and information. The touch panel 83e is used to input operator instructions. The mouse 83f operates the monitor 83d.

[0025] [Die Bonding Method] Figure 3 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in Figure 1.

[0026] As shown in Figure 3, a die bonding method (method of manufacturing a semiconductor device), which is one step in the manufacturing process of a semiconductor device, is performed using a die bonder 1. In the following description, the operation of each part constituting the die bonder 1 is controlled by the control unit 80.

[0027] (Wafer loading: Process S1) A wafer cassette (not shown) containing wafer rings WR is loaded into the wafer cassette lifter 11. The wafer supply unit 10 takes out the wafer rings WR from the wafer cassette filled with wafer rings WR and supplies (loads) them into the wafer holder 12.

[0028] (Substrate loading: Process S2) The transport jig containing the substrate S is loaded into the substrate supply unit 60. In the substrate supply unit 60, the substrate S stored in the transport jig is removed from the transport jig. Then, the substrate S is supplied (loaded) to the bonding unit 40 via the transport unit 50.

[0029] (Pickup: Process S3) After process S1, the wafer holder 12 is moved so that the desired die D can be picked up from the dicing tape DT. The die D is photographed by the wafer recognition camera 24 and image data is acquired. The amount of displacement (in the X, Y, and θ directions) of the die D on the wafer holder 12 from the die position reference point of the die bonder is calculated by image processing. The die position reference point is set in advance to a predetermined position on the wafer holder 12 as the initial setting of the device. The appearance of the die D is inspected by image processing of the image data.

[0030] The die D, whose position has been corrected based on the amount of displacement, is peeled off the dicing tape DT by the push-up unit 13 and the pickup head 21. The die D, peeled off from the dicing tape DT, is attracted and held by the collet 22 provided on the pickup head 21, and is transported to and placed on the intermediate stage 31.

[0031] The die D on the intermediate stage 31 is photographed by the stage recognition camera 34, and image data is acquired. By processing the image data, the amount of displacement (in the X, Y, and θ directions) of the die D on the intermediate stage 31 from the die position reference point of the die bonder is calculated. The die position reference point is a predetermined position on the intermediate stage 31, which is held as the initial setting of the device. Visual inspection of the die D is performed by processing the image data.

[0032] The pickup head 21, which has transported die D to the intermediate stage 31, is returned to the wafer supply unit 10. Following the procedure described above, the next die D is peeled off from the dicing tape DT, and thereafter, die D is peeled off one by one from the dicing tape DT following the same procedure.

[0033] (Bonding: Process S4) The substrate S is transported to the bonding stage 46 by the transport unit 50. The substrate S placed on the bonding stage 46 is photographed by the substrate recognition camera 44 and image data is acquired. The amount of displacement of the substrate S from the substrate position reference point of the die bonder 1 (in the X, Y, and θ directions) is calculated by image processing of the image data. The substrate position reference point is set in advance to a predetermined position of the bonding unit 40 as the initial setting of the device. The appearance of the substrate S is inspected by image processing of the image data.

[0034] In step S3, the suction position of the bond head 41 is corrected based on the amount of displacement of the die D on the intermediate stage 31 calculated, and the die D is picked up by the collet 42. The die D is then bonded to a predetermined location on the substrate S supported by the bond stage 46 by the bond head 41, which has picked up the die D from the intermediate stage 31. Here, the predetermined location on the substrate S is the package area P of the substrate S, or an area where elements are already placed and elements are to be bonded in addition to them, or the bond area of ​​elements to be laminated and bonded. The die D bonded to the substrate S is photographed by the substrate recognition camera 44, and image data is acquired. The image data is processed to perform inspections such as whether the die D is bonded to the desired position (relative position inspection of die D and substrate S) and visual inspection.

[0035] The bond head 41, which has bonded die D to the substrate S, is returned to the intermediate stage 31. Following the procedure described above, the next die D is picked up from the intermediate stage 31 and bonded to the substrate S. This is repeated until die D is bonded to all package areas P on the substrate S.

[0036] (Substrate unloading: Process S5) The substrate S to which the die D has been bonded is transported from the bonding section 40 to the substrate unloading section 70 by the transport section 50. The substrate S is removed from the substrate unloading section 70 and stored in the transport jig. The transport jig containing the substrate S is unloaded from the die bonder 1.

[0037] As described above, die D is mounted on substrate S and discharged from die bonder 1. Subsequently, for example, the transport jig containing the substrate S on which die D is mounted is transported to the wire bonding process, where the electrodes of die D are electrically connected to the electrodes of substrate S via Au wire or the like. Then, substrate S is transported to the molding process, where die D and Au wire are sealed with molding resin (not shown) to complete the semiconductor package.

[0038] (Push-up unit) Figure 4 is a top view of the push-up unit shown in Figure 2. Figure 5 is a schematic diagram showing a cross-section of the main part of the push-up unit shown in Figure 4.

[0039] The push-up unit 13 comprises a first unit 131 and a second unit 132 to which the first unit 131 is attached. The second unit 132 is a common part regardless of the product type, while the first unit 131 is a part that can be replaced depending on the product type.

[0040] The first unit 131 has a cylindrical dome 1312 with a block portion 1311 provided on it. An opening 1313 is provided in the center of the upper surface of the dome 1312, which allows the block portion 1311 to move up and down. A plurality of suction ports 1314 and a plurality of grooves 1315 connecting the plurality of suction ports 1314 are provided around the outer periphery of the opening 1313 on the upper surface of the dome 1312. The inside of the suction ports 1314 is depressurized by a suction mechanism (not shown) when the push-up unit 13 is raised and its upper surface is brought into contact with the back surface of the dicing tape DT. At this time, the back surface of the dicing tape DT is sucked downward and comes into close contact with the upper surface of the dome 1312.

[0041] The block section 1311 has multiple blocks that push the dicing tape DT upward. Here, an example is shown in which the block section 1311 has four blocks BL1 to BL4. The innermost block BL4 is rectangular prism-shaped. The three outer blocks BL1 to BL3 are rectangular tubes and have a rectangular opening that penetrates in the Z1-Z2 direction. Inside block BL1, block BL2 is placed, which is smaller in size than block BL1. Then, inside block BL2, block BL3 is placed, which is smaller in size than block BL2. Then, inside block BL3, block BL4 is placed, which is smaller in size than block BL3.

[0042] Of the four blocks BL1 to BL4, the outermost block BL1 is slightly smaller in diameter than the outer edge of the die D that is to be peeled off. As a result, the corners of the outer edge of the top surface of block BL1 are positioned slightly inward from the outer edge of the die D, so that the force for peeling the die D and the dicing tape DT can be concentrated at the starting point (the outermost part of the die D) where the peeling occurs.

[0043] The second unit 132 as a drive unit has four drive shafts ND4 to ND1 that independently drive the blocks BL1 to BL4 in the vertical direction. For example, the drive shafts ND1 to ND4 are each composed of a motor and a plunger mechanism that converts the rotation of the motor into vertical movement. In this specification, the tip (upper end) of the drive shafts ND4 to ND1 connected to the blocks BL1 to BL4 is called a needle. In this specification, the needles of the drive shafts ND1 to ND4 are called NDL1 to NDL4, respectively.

[0044] Note that the block portion 1321 of the first unit 131 may be composed of fewer than four blocks. In this case, among the drive shafts ND1 to ND4 of the second unit 132, some operate and some do not.

[0045] Since each of the blocks BL1 to BL4 of the push-up unit 13 can operate independently, the push-up unit 13 can perform various operations (push-up sequences). The push-up sequences of multiple blocks are composed of multiple steps.

[0046] For example, the push-up unit 13 can perform an operation of simultaneously pushing up the blocks BL1 to BL4 in the first step, simultaneously pushing up the blocks BL2 to BL4 in the second step, simultaneously pushing up the blocks BL3 and BL4 in the third step, and pushing up the block BL4 in the fourth step. In this specification, this operation is called a multi-stage operation (MS).

[0047] Also, the push-up unit 13 can perform an operation of simultaneously pushing up the blocks BL1 to BL4 in the first step, lowering the block BL1 in the second step, lowering the block BL2 in the third step, and lowering the block BL3 in the fourth step. In this specification, this operation is called a reverse multi-stage operation (RMS).

[0048] (Pick-up operation) FIGS. 6 and 7 are schematic cross-sectional views showing the pick-up operation according to the push-up sequence of RMS. FIG. 6 shows STEP0 to STEP3, and FIG. 7 shows STEP4 and STEP5.

[0049] The die D is picked up by the coordinated movement of the block portion 1311 of the push-up unit 13 and the movement of the collet 22 provided on the pickup head 21.

[0050] (STEP 0) The pickup operation begins by positioning the target die D on the dicing tape DT with the push-up unit 13 and collet 22. Once positioning is complete, the dicing tape DT is attracted to the upper surface of the push-up unit 13 by drawing a vacuum through the suction port 1314 and gaps of the push-up unit 13. At this time, the upper surfaces of blocks BL1 to BL4 are at the same height (initial position) as the upper surface of the dome 1312. In this state, a vacuum is supplied from a vacuum source (not shown), and the collet 22 descends at a predetermined speed while drawing a vacuum towards the device surface of the die D, and lands at a decelerated predetermined speed.

[0051] (First Step (STEP 1)) Then, as shown in Figure 6, blocks BL1 to BL4 rise simultaneously to a predetermined height (block rising height) at a constant speed. The collet 22 rises in conjunction with the pushing motion of blocks BL1 to BL4, while holding the die D. After that, blocks BL1 to BL4 wait for a predetermined time. The die D rises while sandwiched between the collet 22 and blocks BL1 to BL4, but the peripheral part of the dicing tape DT remains vacuum-adhered to the dome 1312, which is the periphery of the pushing unit 13, so tension is generated around the die D, and as a result, peeling of the dicing tape DT begins around the die D.

[0052] (Second Step (STEP 2)) Next, as shown in Figure 6, block BL1 descends to a predetermined height (for example, the initial position or a position lower than the initial position). After that, blocks BL1 to BL4 wait for a predetermined time. As block BL1 descends to the predetermined height, the support for the dicing tape DT is removed, and the detachment of the dicing tape DT progresses due to the tension of the dicing tape DT.

[0053] (Third Step (STEP 3)) Next, as shown in Figure 7, block BL2 descends to a predetermined height (for example, the initial position or a position lower than the initial position). After that, blocks BL1 to BL4 wait for a predetermined time. As block BL2 descends to the predetermined height, the support for the dicing tape DT is removed, and the detachment of the dicing tape DT progresses due to the tension of the dicing tape DT.

[0054] (Fourth Step (STEP 4)) Next, as shown in Figure 7, block BL3 descends to a predetermined height (for example, the initial position or a position lower than the initial position). After that, blocks BL1 to BL4 wait for a predetermined time. As block BL3 descends to the predetermined height, the support for the dicing tape DT is removed, and the detachment of the dicing tape DT progresses due to the tension of the dicing tape DT.

[0055] (Step 5) Next, as shown in Figure 7, the collet 22 holding the die D begins to rise. This causes the entire die D to detach from the dicing tape DT and be picked up. After that, block BL4 descends and returns to its initial position.

[0056] [How to set up a time chart recipe] Time chart recipe 200 constitutes a part of a process recipe. Figure 8 is a diagram illustrating the flow of setting up a time chart recipe using the settings screen.

[0057] The setting screen 100 includes, for example, a multi-stage operation setting screen (FMS1) 101, a reverse multi-stage operation setting screen (FMS2) 102, and a general-purpose operation setting screen (FMS3) 103. The setting screen 103 allows for the setting of both multi-stage and reverse multi-stage operations. The operator selects one of the multiple setting screens 101, 102, and 103 using a touch panel 83e or the like. The control unit 80 displays the selected setting screen on the monitor 83d. The operator then inputs setting values ​​into the items on the setting screen. Based on the input setting values, the control unit 80 sets the push-up parameter (PARA) of the time chart recipe 200 (creation of the time chart recipe 200). The control unit 80 can also change the push-up operation in real time by rewriting (setting) the time chart recipe 200 based on information acquired from sensors, recognition camera images, etc. The setting screen 100 may consist of at least one of the setting screens 101, 102, and 103. The sensors mentioned above include, for example, a sensor for detecting the position of the push-up unit 13, a sensor for detecting pressure and / or flow rate, and a sensor for detecting the gas flow rate of the collet 22.

[0058] The control unit 80 is configured to control the drive shafts ND4 to ND1 that drive blocks BL1 to BL4, respectively, based on the push-up parameters set in the time chart recipe. The push-up parameters are set, for example, by entering values ​​into the setting screen displayed on the monitor 83d. The push-up parameters include the push-up height, push-up speed, and timer for each of NDL1 to NDL4.

[0059] Here, the thrust height refers to the position (height) of the tips of NDL1 to NDL4. The heights of NDL1 to NDL4 are called NDL1_H to NDL4_H, and are sometimes collectively referred to as NDL_H. When the upper ends of blocks BL1 to BL4 are located on the upper surface of dome 1312, NDL_H = 0. The heights of NDL1 to NDL4 are sometimes also called the heights of blocks BL4 to BL1. When referring to the heights of blocks BL4 to BL1, the upper surface of dome 1312 is used as the reference point.

[0060] The upward velocity (V) is the upward velocity (VU) or downward velocity (VD) of NDL1 to NDL4 (blocks BL4 to BL1).

[0061] The timer (T) is the time from when the ascent or descent of NDL1 to NDL4 (blocks BL4 to BL1) in each step is completed until the ascent or descent of NDL1 to NDL4 (blocks BL4 to BL1) in the next step begins. The waiting time (predetermined time) explained in Figures 6 and 7 is set by the timer. The timer can also be described as the operating time difference (interval time) for adjusting the processing time between each block. The length of one step is the time it takes for NDL1 to NDL4 (blocks BL4 to BL1) to reach a predetermined height from a stopped state. Instead of the timer, the length of one step (time) may be used as the parameter. In this case, that time includes the time it takes for NDL1 to NDL4 (blocks BL4 to BL1) to reach a predetermined height from a stopped state and the time they remain stopped at that height.

[0062] The following are examples of the push-up parameters set in the time chart recipe for the push-up unit 13 having four drive shafts. Here, n is 1 to 4 and m is 1 to 4. NDLm_H_Sn: Parameter for the height (H) of needle m (NDLm) in the nth step (Sn) NDLm_VU_Sn: Parameter for the upward push-up speed (VU) of needle m (NDLm) in the nth step (Sn) NDLm_VD_Sn: Parameter for the downward push-up speed (VD) of needle m (NDLm) in the nth step (Sn) NDLm_T_Sn: Parameter for the timer (T) of needle m (NDLm) in the nth step (Sn)

[0063] [FMS2 Settings Example] Figure 9 shows an example of the settings screen for inverse multi-stage operation and the resulting block height.

[0064] The operator selects the setting screen 102 by operating the touch panel 83e. The control unit 80 displays the setting screen 102 on the monitor 83d. On the setting screen 102, NDL2_H [μm] can be input in the first setting, NDL3_H [μm] in the second setting, NDL4_H [μm] in the third setting, and NDL1_H [μm] in the fourth setting (input area). The push-up speed [mm / sec] and timer [msec] can be input in the first to fourth settings (input area).

[0065] NDL1_H, NDL2_H, NDL3_H, and NDL4_H for each step can be set with a single data value. The setting screen 102 shows an example where "0" is entered for NDL2_H in the first setting, "0" is entered for NDL3_H in the second setting, "0" is entered for NDL4_H in the third setting, and "150" is entered for NDL1_H in the fourth setting.

[0066] The thrust speed and timer for each step can be set using data common to NDL1 to NDL4. Setting screen 102 shows examples where "5" is entered for the thrust speed and "100" for the timer in the first to third settings. An example is shown where "1" is entered for the thrust speed and "500" for the timer in the fourth setting.

[0067] The settings for the upward pressure parameters based on the values ​​entered in setting screen 102 are as follows:

[0068] (Fourth setting: Setting of the first step) When "150" is input to NDL1_H, the control unit 80 sets "150" to NDL1_H_S1, and also sets the same value of "150" as NDL1_H_S1 to NDL2_H_S1, NDL3_H_S1, and NDL4_H_S1.

[0069] When "1" is input for the thrust speed, the control unit 80 sets NDL1_VU_S1, NDL2_VU_S1, NDL3_VU_S1, and NDL4_VU_S1 to "1". Also, when "1" is input for the thrust speed, the control unit 80 sets NDL1_VD_S1, NDL2_VD_S1, NDL3_VD_S1, and NDL4_VD_S1 to "1".

[0070] When "500" is input to the timer, the control unit 80 sets "500" to NDL1_T_S1, NDL2_T_S1, NDL3_T_S1, and NDL4_T_S1.

[0071] (Third setting: setting of the second step) When "0" is input to NDL4_H, the control unit 80 sets "0" to NDL4_H_S2 and sets "150", the same value as NDL1_H_S1 in the fourth setting, to NDL1_H_S2, NDL2_H_S2, and NDL3_H_S2.

[0072] When "5" is input for the thrust speed, the control unit 80 sets "5" for NDL1_VU_S2, NDL2_VU_S2, NDL3_VU_S2, and NDL4_VU_S2. Also, when "5" is input for the thrust speed, the control unit 80 sets "5" for NDL1_VD_S2, NDL2_VD_S2, NDL3_VD_S2, and NDL4_VD_S2.

[0073] When "100" is input to the timer, the control unit 80 sets "100" to NDL1_T_S2, NDL2_T_S2, NDL3_T_S2, and NDL4_T_S2.

[0074] (Second setting: setting of the third step) When "0" is input to NDL3_H, the control unit 80 sets "0" to NDL3_H_S3 and sets "150", the same value as NDL1_H_S1 in the fourth setting, to NDL1_H_S3 and NDL2_H_S3. The control unit 80 also sets "0" to NDL4_H_S3, the same value as NDL4_H_S2 in the third setting.

[0075] When "5" is input for the thrust speed, the control unit 80 sets "5" to NDL1_VU_S3, NDL2_VU_S3, NDL3_VU_S3, and NDL4_VU_S3. Also, when "5" is input for the thrust speed, the control unit 80 sets "5" to NDL1_VD_S3, NDL2_VD_S3, NDL3_VD_S3, and NDL4_VD_S3.

[0076] When "100" is input to the timer, the control unit 80 sets "100" to NDL1_T_S3, NDL2_T_S3, NDL3_T_S3, and NDL4_T_S3.

[0077] (First setting: setting of the fourth step) When "0" is input to NDL2_H, the control unit 80 sets NDL2_H_S4 to "0" and sets NDL1_H_S4 to "150", the same value as NDL1_H_S1 in the fourth setting. In addition, the control unit 80 sets NDL3_T_S4 to "0", the same value as NDL3_H_S3 in the second setting, and sets NDL4_H_S4 to "0", the same value as NDL4_H_S2 in the third setting.

[0078] When "5" is input for the thrust speed, the control unit 80 sets "5" for NDL1_VU_S4, NDL2_VU_S4, NDL3_VU_S4, and NDL4_VU_S4. Also, when "5" is input for the thrust speed, the control unit 80 sets "5" for NDL1_VD_S4, NDL2_VD_S4, NDL3_VD_S4, and NDL4_VD_S4.

[0079] When "100" is input to the timer, the control unit 80 sets "100" to NDL1_T_S4, NDL2_T_S4, NDL3_T_S4, and NDL4_T_S4.

[0080] As described above, once the push-up parameter is set, in the first step, blocks BL1 to BL4 are pushed up to a height of 150 [μm], as shown within the dashed line BLK in Figure 7. In the second step, block BL1 is lowered to a height of 0 [μm]. In the third step, block BL2 is lowered to a height of 0 [μm]. In the fourth step, block BL3 is lowered to a height of 0 [μm].

[0081] Furthermore, the control unit 80 may display the heights of blocks BL1 to BL4 in the first to fourth steps on the setting screen 102 based on the set parameters, as shown within the dashed line BLK in Figure 9.

[0082] (Block operation (pushing method)) Figure 10 is a diagram showing the block operation timing of the pushing sequence based on the settings in the settings screen shown in Figure 9.

[0083] First step (STEP 1): After STEP 0 shown in Figure 6, blocks BL1 to BL4 rise to a height of 150 μm at a speed of 1 mm / sec and stop. After 500 msec has elapsed since the end of the first step (blocks BL1 to BL4 have stopped), the process proceeds to the second step.

[0084] Step 2: Block BL1 descends to a height of 0 μm at a speed of 5 mm / sec and stops. After 100 msec has elapsed since the end of Step 2 (Block BL1 has stopped), the process proceeds to Step 3.

[0085] Third step (STEP 3): Block BL2 descends to a height of 0 [μm] at a speed of 5 [mm / sec] and stops. After 100 msec has elapsed since the end of the third step (block BL2 has stopped), the process proceeds to the fourth step.

[0086] Fourth step (STEP 4): Block BL3 descends to a height of 0 [μm] at a speed of 5 [mm / sec] and stops. After 100 msec has elapsed since the end of the fourth step (block BL3 has stopped), the process proceeds to STEP 5 shown in Figure 7. The collet 22, which is adsorbing die D, begins to rise. Subsequently, block BL4 descends.

[0087] [Other FMS2 setting examples] Figure 11 shows other setting examples for the inverse multi-stage operation setting screen and the resulting block heights.

[0088] The settings screen 102 shown in Figure 11, through option settings, allows for the input of NDL4_H[μm] in the fourth setting (input area) compared to the settings screen 102 shown in Figure 9.

[0089] The input for the lifting speed and timer is the same as in the setting screen 102 shown in Figure 11. The input for NDL1_H to NDL4_H in the first to third settings is the same as in the setting screen 102 shown in Figure 9. In the setting screen 102 shown in Figure 11, an example is shown where "150" is entered for NDL1_H and "75" for NDL4_H in the fourth setting. An example is also shown where "1" is entered for the lifting speed and "500" for the timer in the fourth setting.

[0090] The settings for the push-up parameters based on the values ​​entered in the first to third settings of the settings screen 102 are the same as in Figure 9. The parameter settings based on the fourth setting are as follows.

[0091] (Fourth setting: Setting of the first step) When "150" is input to NDL1_H, "150" is set to NDL1_H_S1, and the same value of "150" as NDL1_H_S1 is set to NDL_H2_S1 and NDL3_H_S1. When "75" is input to NDL4_H, the control unit 80 sets "75" to NDL4_H_S1.

[0092] When "1" is input for the thrust speed, the control unit 80 sets NDL1_VU_S1, NDL2_VU_S1, NDL3_VU_S1, and NDL4_VU_S1 to "1". Also, when "1" is input for the thrust speed, the control unit 80 sets NDL1_VD_S1, NDL2_VD_S1, NDL3_VD_S1, and NDL4_VD_S1 to "1".

[0093] When "500" is input to the timer, the control unit 80 sets "500" to NDL1_T_S1, NDL2_T_S1, NDL3_T_S1, and NDL4_T_S1.

[0094] As described above, once the push-up parameters are set, in the first step, as shown within the dashed line BLK in Figure 9, blocks BL1 to BL3 are pushed up to a height of 150 [μm], and block BL4 is pushed up to a height of 75 [μm]. Since the first to third settings are the same as the setting screen 102 shown in Figure 11, the second to fourth steps operate in the same way as the setting screen 102 shown in Figure 11.

[0095] Furthermore, the control unit 80 may display the heights of blocks BL1 to BL4 in the first to fourth steps on the setting screen 102 based on the set parameters, as shown within the dashed line BLK in Figure 11.

[0096] (Block operation) Figure 12 shows the block operation timing of the push-up sequence based on the settings screen shown in Figure 11.

[0097] First step (STEP 1): After STEP 0 shown in Figure 6, blocks BL1 to BL4 rise from a height of 0 [μm] to a height of 75 [μm] at a speed of 1 [mm / sec], and block BL1 stops. Here, a height of 75 [μm] is greater than or equal to the height at which the outer circumference of die D peels off from dicing tape DT (first predetermined position). Furthermore, blocks BL2 to BL4 rise at the same speed to a height of 150 [μm] (second predetermined position) and stop. After 500 msec has elapsed since the end of the first step (blocks BL2 to BL4 have stopped), the process proceeds to the second step.

[0098] Step 2: Block BL1 descends to a height of 0 μm at a speed of 5 mm / sec and stops. After 100 msec has elapsed since the end of Step 2 (Block BL1 has stopped), the process proceeds to Step 3.

[0099] Third step (STEP 3): Block BL2 descends to a height of 0 [μm] at a speed of 5 [mm / sec] and stops. After 100 msec has elapsed since the end of the third step (block BL2 has stopped), the process proceeds to the fourth step.

[0100] Fourth step (STEP 4): Block BL3 descends to a height of 0 [μm] at a speed of 5 [mm / sec] and stops. After 100 msec has elapsed since the end of the fourth step (block BL3 has stopped), the process proceeds to STEP 5 shown in Figure 7, and collet 22 begins to rise. After that, block BL4 descends.

[0101] [FMS3 Configuration Example] Figure 13 shows an example of the general-purpose operation configuration screen and the resulting block height.

[0102] The operator selects the setting screen 103 by operating the touch panel 83e. The control unit 80 displays the setting screen 103 on the monitor 83d. On the setting screen 103, NDL1_H[μm], NDL2_H[μm], NDL3_H[μm], NDL4_H[μm], thrust velocity[mm / sec], and thrust velocity (downward)[mm / sec] are input fields and can be entered step by step. In addition, NDL1_T[msec], NDL2_T[msec], NDL3_T[msec], and NDL4_T[msec] are input fields and can be entered step by step. The thrust velocity for upward movement (VU) and the thrust velocity for downward movement (VD) are set to common values ​​for NDL1 to NDL4.

[0103] Unlike settings screens 101 and 102, setting screen 103 requires input for all items in each step. The push-up parameters set by inputting on setting screen 103, shown in Figure 13, will be the same as the push-up parameters set by inputting on setting screen 102, shown in Figure 9.

[0104] [Other FMS3 setting examples] Figure 14 shows other setting examples for the inverse multi-stage operation setting screen and the resulting block heights.

[0105] Figure 14 shows an example of the setting screen 103 where, in the first setting, "300" is entered for NDL1_H and "0" is entered for NDL2_H to NDL4_H. An example is shown where "5" is entered for the upward thrust velocity (VU) and "5" for the downward thrust velocity (VD). An example is shown where "100" is entered for NDL1_T to NDL4_T. In the second setting, an example is shown where "300" is entered for NDL1_H to NDL4_H. An example is shown where "5" is entered for VU and "5" for VD. An example is shown where "160" is entered for NDL1_T, "160" for NDL2_T, "130" for NDL3_T, and "100" for NDL4_T.

[0106] The settings for the push-up parameters based on the values ​​entered in setting screen 103 are as follows:

[0107] (Second setting: Setting of the first step) When "300" is input from NDL1_H to NDL4_H, the control unit 80 sets "300" to NDL1_H_S1, NDL2_H_S1, NDL3_H_S1 and NDL4_H_S1.

[0108] When "5" is input to VU, the control unit 80 sets "5" to NDL1_VU_S1, NDL2_VU_S1, NDL3_VU_S1, and NDL4_VU_S1. Also, when "5" is input to VD, the control unit 80 sets "5" to NDL1_VD_S1, NDL2_VD_S1, NDL3_VD_S1, and NDL4_VD_S1.

[0109] When "160" is input to NDL1_T, "160" to NDL2_T, "130" to NDL3_T, and "100" to NDL4_T, the control unit 80 sets "160" to NDL1_T_S1, "160" to NDL2_T_S1, "130" to NDL3_T_S1, and "100" to NDL4_T_S1.

[0110] (First setting: setting of the second step) When "300" is input to NDL1_H, the control unit 80 sets NDL1_H_S2 to "300". When "0" is input from NDL2_H to NDL4_H, the control unit 80 sets NDL2_H_S2, NDL3_H_S2 and NDL4_H_S2 to "0".

[0111] When "5" is input to VU, the control unit 80 sets "5" to NDL1_VU_S2, NDL2_VU_S2, NDL3_VU_S2, and NDL4_VU_S2. Also, when "5" is input to VD, the control unit 80 sets "5" to NDL1_VD_S2, NDL2_VD_S2, NDL3_VD_S2, and NDL4_VD_S2.

[0112] When "100" is input to NDL1_T, "100" to NDL2_T, "100" to NDL3_T, and "100" to NDL4_T, the control unit 80 sets "100" to NDL1_T_S2, "100" to NDL2_T_S2, "100" to NDL3_T_S2, and "100" to NDL4_T_S2.

[0113] As described above, once the push-up parameter is set, in the first step, blocks BL1 to BL4 are pushed up to a height of 300 [μm], as shown within the dashed line BLK in Figure 12. In the second step, each block descends in the order of block BL1, block BL2, and block BL3.

[0114] Furthermore, the control unit 80 may display the heights of blocks BL1 to BL4 in the first to fourth steps on the setting screen 103 based on the set parameters, as shown within the dashed line BLK in Figure 14.

[0115] (Block operation) Figure 15 shows the block operation timing of the push-up sequence based on the settings screen shown in Figure 14.

[0116] First step (STEP 1): After STEP 0 shown in Figure 6, blocks BL1 to BL4 rise to a height of 300 μm at a speed of 5 mm / sec and stop. After 100 msec has elapsed since block BL1 stopped (end of first step), block BL1 proceeds to the second step. After 130 msec has elapsed since block BL2 stopped (end of first step), block BL2 proceeds to the second step. After 160 msec has elapsed since block BL3 stopped (end of first step), block BL3 proceeds to the second step. After 160 msec has elapsed since block BL4 stopped (end of first step), block BL4 proceeds to the second step.

[0117] Step 2: Block BL1 descends to a height of 0 μm at a speed of 5 mm / sec and stops. Block BL2 descends to a height of 0 μm at a speed of 5 mm / sec and stops. Block BL3 descends to a height of 0 μm at a speed of 5 mm / sec and stops. Block BL4 maintains a height of 300 μm. In Step 2, the descending movements of Blocks BL2 and BL3 begin while Blocks BL1 and BL2 are descending. In other words, the descending movements of Blocks BL1 and BL2 occur in parallel (overlapping), and the descending movements of Blocks BL2 and BL3 occur in parallel (overlapping).

[0118] The point at which the second step is completed (the slowest block among blocks BL1 to BL3 stops) marks the starting point for NDL1_T to NDL4_T of the first setting (second step). After 100 msec has elapsed since the completion of the second step, the process proceeds to STEP 5 shown in Figure 7, and collet 22 begins to rise. Subsequently, block BL4 descends.

[0119] As described above, the control unit 80 can change the thrusting motion by rewriting (setting) the time chart recipe 200 in real time based on information acquired from sensors, images from recognition cameras, etc.

[0120] If any malfunction occurs during the lifting operation of the block section 1311 by the lifting unit 13, the lifting operation is not interrupted and restarted (retried) or stopped, but rather the lifting operation is varied and continued according to the nature of the malfunction.

[0121] For example, in the first step of the operation set by the settings screen in Figure 9, the dicing tape DT is peeled off around the die D. However, at this time, the area around the die D is subjected to downward stress and bends. This creates a gap between the die D and the lower surface of the collet 22, allowing air to flow into the vacuum suction system of the collet 22. As a result, the suction output of the gas flow sensor (not shown) provided in the vacuum suction system increases, and a leak is detected.

[0122] The outermost block, block BL1, detects the leak while it is rising, and if the amount of leak is below a predetermined value, the operation of the push-up unit 13 to drive each block BL1 to BL4 continues as is. In particular, when all blocks BL1 to BL4 are initially raised, blocks BL1 to BL4 are raised until peeling begins within a predetermined range. That is, even if a leak occurs, the raising of blocks BL1 to BL4 in the first step continues. This allows the die to be saved by continuing production depending on the degree of the abnormality that occurs during operation.

[0123] If the leakage amount exceeds a predetermined value but is less than or equal to a second predetermined value, the time chart recipe 200 is rewritten in real time to change the operation of each block BL1 to BL4 of the push-up unit 13 and continue the operation. If the leakage amount exceeds the second predetermined value, the operation is either retried or canceled.

[0124] This embodiment provides at least one of the following effects.

[0125] (a) Multiple thrust parameters can be set by inputting just one setting item on the settings screen. This makes it easier to set up the thrust sequence.

[0126] (b) A single input in one block or step allows for the setting of parameters for all blocks or all steps. This simplifies the setup of the push sequence and reduces errors.

[0127] (c) By providing a setting screen for specific thrust sequences, it is possible to limit the input items. This makes it easier to set up thrust sequences and to convert the entered setting values ​​into thrust parameters.

[0128] The disclosures made by the Disclosers have been described in detail based on embodiments, but the disclosures are not limited to the embodiments described above and can be modified in various ways.

[0129] In the embodiment, an example with four drive shafts was described. However, it is not limited to this, and there may be fewer or more drive shafts than four.

[0130] In the embodiment, an example was described in which the push-up unit uses a block to push up. However, it is not limited to this, and the push-up unit may use a needle to push up.

[0131] In the embodiments, an example in which a die attach film is used was described. However, the invention is not limited to this, and a preform portion for applying adhesive to the substrate may be provided, and a die attach film may not be used.

[0132] In the embodiments described, an example of a die bonder was described in which a die is picked up from a wafer supply unit with a pickup head and placed on an intermediate stage, and the die placed on the intermediate stage is bonded to a substrate with a bonding head. However, the disclosure is not limited to this and can also be applied to die bonding apparatus that picks up dies from a wafer supply unit.

[0133] For example, it can also be applied to die bonders that lack an intermediate stage and pickup head, and instead bond the die in the wafer supply section to the substrate using a bonding head.

[0134] Furthermore, it can be applied to flip-chip bonders that lack an intermediate stage, picking up dies from the wafer supply unit, rotating the die pickup head upwards to transfer the dies to the bonding head, and then bonding them to the substrate with the bonding head.

[0135] In the embodiments, an example of a die bonder was described. However, the disclosure can also be applied to semiconductor manufacturing equipment that places picked-up dies onto a tray.

[0136] 1... Die bonder (semiconductor manufacturing equipment) 13... Push-up unit BL1-BL4... Block 21... Pickup head (head) 22... Collet 80... Control unit

Claims

1. A semiconductor manufacturing apparatus comprising: a push-up unit having multiple blocks, each of which is capable of moving up and down independently; a head having a collet for adsorbing a die and capable of moving up and down; and a control unit configured to configure the push-up sequence of the multiple blocks in multiple steps, and to allow setting of multiple push-up parameters by inputting one of the setting items on a setting screen in which the height of the multiple blocks can be input for each step, and to control the operation of the multiple blocks based on the set multiple push-up parameters.

2. A semiconductor manufacturing apparatus according to claim 1, wherein the push-up sequence is a reverse multi-stage operation sequence in which all of the plurality of blocks are pushed up to a predetermined height and then sequentially lowered starting from the outermost block.

3. The semiconductor manufacturing apparatus according to claim 2, wherein the setting screen is configured such that the height of the innermost block can be input in the input area of ​​the first step, and the height of the outermost block can be input in the input area of ​​the second step.

4. The semiconductor manufacturing apparatus according to claim 3, wherein the setting screen is configured such that the height of the outermost block can be input in the input area of ​​the first step.

5. A semiconductor manufacturing apparatus according to any one of claims 1 to 3, wherein the control unit is configured to set the push-up parameters for the heights of all the blocks in each step based on the input of the height of one of the blocks in each step on the setting screen.

6. A semiconductor manufacturing apparatus according to any one of claims 1 to 4, wherein the setting screen is configured such that the push-up speed of the plurality of blocks can be input step by step.

7. A semiconductor manufacturing apparatus according to any one of claims 1 to 4, wherein the setting screen is configured to allow input of a timer for each step, which is the time from when the raising or lowering of the plurality of blocks is completed until the raising or lowering of the plurality of blocks in the next step begins.

8. A semiconductor manufacturing apparatus according to claim 1, wherein the control unit is configured to lower the innermost block after the collet holding the die in the push-up sequence has begun to rise.

9. A semiconductor manufacturing apparatus according to claim 2, wherein the control unit is configured such that, in the push-up sequence, while the plurality of blocks are rising, the upward movement of the outermost block is stopped at a first predetermined position, and the upward movement of all the blocks inside the outermost block is continued up to a second predetermined position.

10. A semiconductor manufacturing apparatus comprising: a push-up unit having a plurality of blocks, each of which is capable of moving up and down independently; a head having a collet for adsorbing a die and capable of moving up and down; a control unit configured to configure the push-up sequence of the plurality of blocks in a plurality of steps, allowing the setting of each push-up parameter by a setting screen in which the height of the plurality of blocks can be input for each step, allowing the setting of multiple push-up parameters by inputting one of the setting items on the setting screen in which the speed of rising and falling of the push-up speed of the plurality of blocks can be input for each step, and capable of controlling the operation of the plurality of blocks based on the set multiple push-up parameters.

11. A semiconductor manufacturing apparatus according to claim 10, wherein the push-up sequence is a reverse multi-stage operation sequence in which all the blocks are pushed up to a predetermined height and then sequentially lowered starting from the outermost block, and the control unit is configured to perform the lowering of the plurality of blocks in parallel in the push-up sequence.

12. A method for lifting a semiconductor manufacturing apparatus comprising a lifting unit having a plurality of blocks, each of which is capable of moving up and down independently, and a head having a collet for adsorbing a die and capable of moving up and down, the method comprising: configuring a lifting sequence of the plurality of blocks in a plurality of steps, setting a plurality of lifting parameters based on the input of one of the setting items on a setting screen in which the height of the plurality of blocks can be input for each step; and controlling the operation of the plurality of blocks based on the set lifting parameters.

13. A method for manufacturing a semiconductor device, comprising the steps of: peeling a die from a wafer held in a wafer ring using the push-up method of claim 12 and picking up the die; and bonding the picked-up die to a substrate.

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