Foreign matter removal device, die bonding device, foreign matter removal method, and method for manufacturing semiconductor device

Abstract

The invention provides a technology capable of improving the ability to remove foreign matter from a surface of a substrate.　This foreign matter removal device comprises: a transport unit having a pair of transport rails and capable of transporting a substrate in a pitch-feed manner; and a cleaning head having an air outlet and an air intake on a bottom surface facing the substrate and being capable of moving in a direction intersecting the direction of movement of the substrate. The length of the substrate in the direction of movement over which foreign matter can be removed from the bottom surface of the cleaning head (cleaning width) is configured to be longer than a distance over which the substrate is pitch-fed (substrate feed width).

Description

Foreign Object Removal Device, Die Bonding Device, Foreign Object Removal Method, and Method of Manufacturing Semiconductor Device

[0001] The present disclosure relates to a die bonding device, and is applicable, for example, to a die bonder provided with a foreign object removal device.

[0002] As one step in the manufacturing process of a semiconductor device, in a die bonder, a die picked up by a bond head is bonded to a substrate. The die bonder may include a foreign object removal device for removing dust (foreign objects) on the substrate (for example, Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2012-199458

[0004] An object of the present disclosure is to provide a technology capable of improving the ability to remove foreign objects on the surface of a substrate. Other objects and novel features will become apparent from the description of this specification and the accompanying drawings.

[0005] The outline of a representative aspect of the present disclosure is as follows. The foreign object removal device includes a transport unit having a pair of transport rails and capable of transporting a substrate in a pitch feed manner, and a cleaning head having an air outlet and an air suction port on a bottom surface facing the substrate and movable in a direction intersecting the moving direction of the substrate. The length (cleaning width) in the moving direction of the substrate on the bottom surface of the cleaning head, which can remove foreign objects, is configured to be longer than the distance (substrate feed width) by which the substrate is fed in a pitch feed manner.

[0006] According to the present disclosure, it becomes possible to improve the ability to remove foreign objects on the surface of a substrate.

[0007] Figure 1 is a diagram illustrating the configuration and operation of the die bonding apparatus. Figure 2 is a diagram illustrating the configuration and operation of the die bonding apparatus. Figure 3 is a diagram illustrating the configuration and operation of the die bonding apparatus. Figure 4 is a diagram illustrating the configuration and operation of the die bonding apparatus. Figure 5 is a diagram illustrating the configuration and operation of the cleaning head. Figure 6 is a diagram illustrating the configuration and operation of the cleaning head. Figure 7 is a diagram illustrating the configuration and operation of the cleaning head. Figure 8 is a diagram illustrating the manufacturing method of semiconductor devices. Figure 9 is a diagram illustrating the foreign matter removal process. Figure 10 is a diagram illustrating the operation of the cleaning head in operation example 1. Figure 11 is a diagram illustrating the operation of the cleaning head in operation example 2. Figure 12 is a diagram illustrating the operation of the cleaning head in operation example 3.

[0008] The embodiments will be described below with reference to the drawings. However, for the sake of clarity, the following descriptions and drawings have been omitted and simplified as appropriate. Also, the same reference numerals are used for the same components, and repeated explanations may be omitted. Furthermore, in order to make the explanation clearer, the width, thickness, shape, etc. of each part may be represented schematically in the drawings, compared to the actual embodiment. In addition, the dimensional relationships of each element and the ratios of each element do not necessarily match between multiple drawings.

[0009] [Configuration of Die Bonding Equipment] Figure 1 is a schematic top view showing an example of the configuration of a die bonder, which is an example of a die bonding equipment. Figure 2 is a schematic diagram showing the wafer supply section, intermediate stage section, and bonding section shown in Figure 1, viewed from the right side.

[0010] As shown in Figures 1 and 2, the die bonder 1 broadly comprises a wafer supply unit 10, a pickup unit 20, an intermediate stage unit 30, a bonding unit 40, a transport unit 50, a substrate supply unit 60K, a substrate unloading unit 60H, a foreign matter removal unit 70J, a coating unit 70T, and a control unit 80. The Y2-Y1 direction (Y direction) is the front-to-back direction of the die bonder 1, the X2-X1 direction (X direction) is the left-to-right direction, and the Z1-Z2 direction (Z direction) is the up-and-down direction. The wafer supply unit 10 is located on the front side of the die bonder 1, and the bonding unit 40 is located on the rear side. Here, the X, Y, and Z directions are orthogonal to each other.

[0011] (Wafer supply unit) As shown in Figure 1, the wafer supply unit 10 includes a wafer cassette lifter 11, a wafer holding base 12, and a peeling unit 13.

[0012] The wafer cassette lifter 11 moves a wafer cassette (not shown) containing multiple wafer rings WR up and down to the wafer transport height. The wafer correction chute (not shown) aligns the wafer rings WR supplied from the wafer cassette lifter 11. The wafer extractor (not shown) removes the wafer rings WR from the wafer cassette and supplies them to the wafer holder 12, or removes them from the wafer holder 12 and stores them in the wafer cassette.

[0013] A wafer W is bonded (attached) to a dicing tape DT, and the wafer W is divided into multiple dies D. The dicing tape DT is held in a wafer ring WR. The wafer W is, for example, a semiconductor wafer, and the dies D are semiconductor chips.

[0014] The wafer holder 12 moves in the X and Y directions. This moves the wafer ring WR so that the die D to be picked up is in a predetermined position on the peeling unit 13. The wafer holder 12 also rotates the wafer ring WR in the XY plane. The peeling unit 13 moves in the vertical direction. The peeling unit 13 peels the die D from the dicing tape DT.

[0015] (Pickup Unit) As shown in Figures 1 and 2, the pickup unit 20 includes a pickup head 21, a pickup head table 23, and a wafer recognition camera 24. The pickup head 21 is provided with a collet 22 that adsorbs and holds the peeled die D at its tip. The pickup head 21 picks up the die D from the wafer supply unit 10 and places it on the intermediate stage 31. The pickup head table 23 moves the pickup head 21 in the Y direction. The pickup head table 23 is provided with drive units (not shown) that raise, lower, rotate, and move the pickup head 21 in the X direction. The wafer recognition camera 24 recognizes the pickup position of the die D to be picked up from the wafer W and performs visual inspection of the die D.

[0016] As shown in Figures 1 and 2, the intermediate stage section 30 includes an intermediate stage 31 on which the die D is placed, and a stage recognition camera 34 for recognizing the die D on the intermediate stage 31. The intermediate stage 31 is equipped with suction holes for adsorbing the placed die D. The placed die D is temporarily held on the intermediate stage 31.

[0017] (Foreign object removal section) Figure 3 shows the schematic configuration of the foreign object removal section shown in Figure 1 when viewed from the right side.

[0018] As shown in Figures 1 and 3, the foreign matter removal unit 70J includes a cleaning head 71J, a drive unit 73J, and a cleaning stage 76J. The cleaning head 71J cleans the substrate S that has been transported to the cleaning stage 76J by the transport unit 50. The drive unit 73J can move the cleaning head 71J in the X, Y, and Z directions.

[0019] Here, the substrate S can be, for example, a wiring board, a lead frame made of a thin metal sheet, or a glass substrate. Multiple product areas are formed on the substrate S in a matrix. The product areas ultimately form a single package. The product area is hereafter referred to as the package area P. In addition, position recognition marks (not shown) for the package area P are formed on the substrate S.

[0020] The cleaning stage 76J rises when cleaning the substrate S, supporting the substrate S from below. The cleaning stage 76J has suction holes (not shown) for vacuum adsorption of the substrate S, and can fix the substrate S in place.

[0021] (Coating section) Figure 4 shows the schematic configuration of the coating section shown in Figure 1 when viewed from the right side.

[0022] As shown in Figures 1 and 4, the coating unit 70T includes a syringe 71T, a drive unit 73T, a coating recognition camera 74T, and a coating stage 76T. The syringe 71T has a nozzle 72T at its tip. The syringe 71T contains a resin paste as an adhesive, and the paste is dispensed from the nozzle 72T. The syringe 71T applies the resin paste to the substrate S that has been transported to the coating stage 76T by the transport unit 50. The drive unit 73T can move the syringe 71T in the X, Y, and Z directions.

[0023] The coating recognition camera 74T uses the syringe 71T to confirm the surface to which the resin paste should be applied and to determine the application position. The coating stage 76T rises when applying the paste to the substrate S, supporting the substrate S from below. The coating stage 76T has suction holes (not shown) for vacuum adsorption of the substrate S, and can fix the substrate S in place.

[0024] The foreign matter removal section 70J and the coating section 70T are also called the preform section. The preform section is located on the substrate supply section 60K side of the bonding section 40. The foreign matter removal section 70J is located on the substrate supply section 60K side of the coating section 70T.

[0025] (Bonding section) As shown in Figures 1 and 2, the bonding section 40 includes a bond head 41, a bond head table 43, a substrate recognition camera 44, and a bond stage 46. The bond head 41 is provided with a collet 42 for adsorbing and holding the die D at its tip. The bond head table 43 moves the bond head 41 in the Y direction. The bond head table 43 is provided with drive units (not shown) for raising and lowering, rotating, and moving the bond head 41 in the X direction. The substrate recognition camera 44 images the substrate S and recognizes the bond position. The bond stage 46 is raised when the die D is placed on the substrate S to support the substrate S from below. The bond stage 46 has a suction port (not shown) for vacuum adsorption of the substrate S, and can fix the substrate S in place. The bond stage 46 has a heating unit (not shown) for heating the substrate S.

[0026] With this configuration, the pickup position and orientation are corrected based on the image data from the stage recognition camera 34, and the bond head 41 picks up the die D from the intermediate stage 31. Then, the bond head 41 bonds the die D onto the package area P of the substrate S based on the image data from the substrate recognition camera 44, or bonds it in a stacking manner on top of a die that has already been bonded to the package area P of the substrate S.

[0027] (Transportation Section) As shown in Figure 1, the transport section 50 has a transport lane consisting of a pair of transport rails 51 and 52 that move the substrate S in the X direction. The transport rails 51 and 52 are provided in parallel. With this configuration, the transport section 50 takes the substrate S from the substrate supply section 60K, moves the substrate S along the transport rails 51 and 52 through the cleaning stage 76J, coating stage 76T, and bonding stage 46 to the substrate discharge section 60H, and delivers the substrate S to the substrate discharge section 60H. In this specification, the transport rails 51 and 52 are also referred to as chutes or substrate guides.

[0028] (Substrate supply unit / Substrate output unit) The substrate supply unit 60K takes out the substrates S that have been stored in the transport jig and supplied them to the transport unit 50. The substrate output unit 60H stores the substrates S that have been transported by the transport unit 50 into the transport jig.

[0029] (Control Unit) As shown in Figure 1, the control unit 80 is configured as a computer having a CPU (Central Processing Unit) 81, a storage device 82, and an input / output device 83. The control unit 80 is also called a control device or controller. The storage device 82 has a main memory 82a and an auxiliary storage device 82b. The main memory 82a is composed of RAM (Random Access Memory) which stores processing programs and the like. The auxiliary storage device 82b is composed of an HDD (Hard Disk Drive) or SSD (Solid State Drive) which stores control data and image data necessary for control. The processing program is a process recipe which describes the procedures and conditions for processing.

[0030] The input / output device 83 includes an image acquisition device 83a, a motor control device 83b, and an I / O signal control device 83c. The image acquisition device 83a acquires image data from an optical system such as a substrate recognition camera 44. The motor control device 83b controls the drive units of the wafer supply unit 10, such as the XY table (not shown), the pickup head table 23, and the bond head table 43. The I / O signal control device 83c acquires signals from various sensors and outputs electrical signals to control the device.

[0031] (Details of the cleaning head) Figure 5 is a cross-sectional view showing the schematic configuration and movement of the cleaning head. Figure 6 is a plan view showing the movement and shape of the cleaning head. Figure 7 is a plan view showing the movement of the substrate relative to the cleaning head.

[0032] In Figures 5 and 6, the substrate S supported in the grooves of the transport rails 51 and 52 is transported in the X1 direction (as shown in Figure 6). The cleaning head 71J is equipped with an air supply pipe 71a and an air discharge pipe 71b. The air supply pipe 71a is connected to a device (not shown) that supplies compressed air via piping and a flow rate controller (not shown). The air discharge pipe 71b is connected to a suction device (not shown), such as a vacuum device, via a flow rate controller (not shown). The flow rates for supply (blowing) and suction are controlled by the control unit 80. It is preferable that the suction flow rate is greater than the blowing flow rate. As shown in Figure 5, the air discharge pipe 71b has a larger diameter than the air supply pipe 71a. This is because the air discharge pipe 71b is used for transporting foreign matter.

[0033] As shown in Figure 5, the cleaning head 71J has a nozzle 71d connected to the air supply pipe 71a and a nozzle 71e connected to the air discharge pipe 71b. The cross-sectional area of ​​nozzle 71e is larger than that of nozzle 71d. Nozzles 71d and 71e constitute a cleaning nozzle.

[0034] As shown in Figure 6, the nozzle surface 71c on the bottom surface of the cleaning head 71J is closest to the surface of the substrate S. The nozzle surface 71c is rectangular in shape, for example, its length in the X direction is longer than its length in the Y direction. As shown in Figure 6, the nozzle surface 71c has multiple air outlets 71f, which are the tips of nozzles 71d, arranged in a row in the center, and an air intake port 71g, which is the tip of nozzle 71e, is provided to surround these air outlets 71f. In other words, multiple circular air outlets 71f are arranged along the X direction in the center of the nozzle surface 71c, and the air intake port 71g is arranged to surround the air outlets 71f in a ring shape (elliptical shape). The area of ​​the air intake port 71g is larger than the area of ​​the air outlets 71f.

[0035] With this configuration, foreign matter blown away by the air discharged from the air outlet 71f of nozzle 71d is immediately sucked up by the air intake 71g of nozzle 71e, as shown by the arrow in Figure 5, and is ultimately discarded. This prevents the dust from being sucked up all at once before it can be stirred up by the air, thus preventing the dust that was supposed to have been removed from adhering to the substrate again.

[0036] As shown in Figure 7, the nozzle region is the area inside the air intake port 71g of the nozzle 71e located on the outer circumference of the nozzle surface 71c, but the area from which foreign matter can be removed is the entire nozzle surface 71c. The length of the nozzle surface 71c in the X direction is the cleaning width (CW). The cleaning area CA is the region in which the nozzle surface 71c of the cleaning head 71J moves in the Y direction over the substrate S. The cleaning head 71J is configured such that the cleaning width is longer than the length of one pitch in the pitch feeding transport of the substrate S, which will be described later.

[0037] As shown in Figure 5, the lower side of the cleaning head 71J is narrower than the upper side. In other words, the nozzle surface 71c, which is the lower surface of the cleaning head 71J, is smaller than the upper surface of the cleaning head 71J. This makes it easier to remove foreign matter from the part of the substrate S that is close to the transport rails 51 and 52.

[0038] The cleaning head 71J is capable of moving up and down and horizontally. As shown by arrow A in Figure 5, during cleaning, the cleaning head 71J descends to the correct position on the substrate S, and rises when the substrate S is moved or replaced. The correct position (cleaning position) is, for example, when the nozzle surface 71c is 2 mm above the substrate. When the substrate S is moved or replaced, it is preferable for the cleaning head 71J to retract to the outside of the substrate S. The retraction location may be above the transport rails 51 and 52. As shown in Figure 7, it is preferable for the cleaning head 71J to retract to the outside of the transport rails 51 and 52. In Figure 7, the cleaning head 71J is located outside the transport rail 52, but it may also be positioned outside the transport rail 51 to wait. Furthermore, as shown by arrow B in Figures 5 and 6, the cleaning head 71J moves in the width direction (Y direction) of the substrate S to remove foreign matter.

[0039] The predetermined speed of the cleaning head 71J is set based on throughput and cleaning capacity. Furthermore, the foreign matter removal capacity may vary depending on the position in the substrate width direction. For example, the foreign matter removal capacity is lower at positions closer to the transport rails 51 and 52. Therefore, it is preferable to set the movement speed lower in areas where the foreign matter removal capacity is low compared to other areas.

[0040] The cleaning head 71J moves in a direction (Y direction) orthogonal to the moving direction (X direction) of the substrate S, and the direction of one side of the nozzle surface 71c of the cleaning head 71J is the same as the moving direction of the substrate S. Here, orthogonal does not exactly mean 90 degrees and includes errors on the device. In other words, the cleaning head 71J moves in a direction intersecting the moving direction of the substrate S. As shown in FIG. 7, the cleaning head 71J does not move in the X direction (for example, the X2 direction), and the substrate S moves in the direction of the arrow C (X1 direction). Thereby, the cleaning area CA of the substrate S moves. The substrate S is conveyed by pitch feed, and the moving amount per pitch may be, for example, the length of the substrate in the conveyance direction in the package area P. In this specification, the moving amount per pitch is referred to as the substrate feed width (SW), and the length of the substrate in the conveyance direction in the package area P is referred to as the package area width (PW). The substrate feed width (SW) is not limited to the package area width (PW).

[0041] 〔Die Bonding Method〕 FIG. 8 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in FIG. 1.

[0042] As shown in FIG. 8, a die bonding method (a method for manufacturing a semiconductor device) in one step of the manufacturing process of the semiconductor device is performed using the die bonder 1. In the following description, the control unit 80 controls the operations of each part constituting the die bonder 1.

[0043] (Wafer Loading: Step S1) A wafer cassette (not shown) storing the wafer ring WR is loaded into the wafer cassette lifter 11. The wafer ring WR is taken out from the wafer cassette filled with the wafer ring WR and supplied (loaded) to the wafer holding table 12.

[0044] (Substrate Loading: Step S2) A transfer jig (not shown) storing the substrate S is loaded into the substrate supply unit 60. In the substrate supply unit 60, the substrate S stored in the transfer jig is taken out from the transfer jig. Then, the substrate S is supplied (loaded) to the foreign matter removing unit 70J via the transfer unit 50.

[0045] (Pickup: Step S3) After Step S1, the wafer holding stage 12 is moved so that the desired die D can be picked up from the dicing tape DT. The die D is photographed by the wafer recognition camera 24, and image data is acquired. By performing image processing on the image data, the deviation amounts (in the X, Y, and θ directions) of the die D on the wafer holding stage 12 from the die position reference point of the die bonder 1 are calculated. The die position reference point is previously held as a predetermined position of the wafer holding stage 12 in the initial settings of the apparatus. By performing image processing on the image data, an appearance inspection of the die D is performed.

[0046] The die D is peeled from the dicing tape DT by the peeling unit 13 and the pickup head 21. The die D peeled from the dicing tape DT is adsorbed and held by the collet 22 provided on the pickup head 21, and is transported to the intermediate stage 31 and placed thereon.

[0047] The die D on the intermediate stage 31 is photographed by the stage recognition camera 34, and image data is acquired. By performing image processing on the image data, the deviation amounts (in the X, Y, and θ directions) of the die D on the intermediate stage 31 from the die position reference point of the die bonder 1 are calculated. The die position reference point is previously held as a predetermined position of the intermediate stage 31 in the initial settings of the apparatus. By performing image processing on the image data, an appearance inspection of the die D is performed.

[0048] The pickup head 21 that has transported the die D to the intermediate stage 31 is returned to the wafer supply unit 10. According to the procedure described above, the next die D is peeled from the dicing tape DT, and thereafter, the die D is peeled one by one from the dicing tape DT according to the same procedure.

[0049] (Foreign Object Removal: Step S4) FIG. 9 is a flowchart showing the foreign object removal process shown in FIG. 8. A foreign object removal method is performed in the foreign object removal process.

[0050] [Cleaning: Process S41] The transported substrate S is supported by suction on the cleaning stage 76J. At this time, the cleaning head 71J is located horizontally away from the substrate S (for example, on or outside the transport rails 51, 52, in a waiting area), as shown in Figure 3. Also, as shown in Figure 6, the end of the cleaning head 71J in the X1 direction is located outside the end of the substrate S in the X1 direction, and the end of the substrate S is located within the cleaning area CA.

[0051] <Cleaning Head Operation Example 1> Figure 10 is a flowchart showing the operation of the cleaning head in operation example 1. Figure 10 is a flowchart when the waiting area of ​​the cleaning head 71J is located outside the transport rail 52 (Y2 direction side). If the waiting area of ​​the cleaning head 71J is located outside the transport rail 51 (Y1 direction side), read Y1 direction as Y2 direction and Y2 direction as Y1 direction.

[0052] (Movement from standby position: Process S411a) The cleaning head 71J moves in the Y1 direction from a standby location (standby position) outside the transport rail 52 to above one end of the substrate S just inside the transport rail 52. P1 shown in Figure 5 indicates the position of the cleaning head 71J in this state.

[0053] (Descending: Process S411b) Next, the cleaning head 71J descends to the correct position on the substrate S. P2 shown in Figures 5 and 6 indicates the position of the cleaning head 71J in this state.

[0054] (Movement in the width direction of the substrate: process S411c) Next, the cleaning head 71J starts blowing and sucking air and moves in the Y1 direction to the other end of the substrate S while cleaning. P3 shown in Figures 5 and 6 indicates the position of the cleaning head 71J in this state.

[0055] (Rising: Process S411d) Next, the cleaning head 71J stops blowing and sucking air and rises above the other end of the substrate S.

[0056] (Move to standby position: Step S411e) The cleaning head 71J then moves above the substrate S in the Y2 direction and returns to the standby position. The speed of this movement is faster than the speed of movement while cleaning. P0 shown in Figure 7 indicates the position of the cleaning head 71J in this state.

[0057] <Example of cleaning head operation 2> Figure 11 is a flowchart of the operation of the cleaning head in example of operation 2. Figure 11 is a flowchart when the waiting area of ​​the cleaning head 71J is located both outside the transport rail 52 (Y2 direction side) and outside the transport rail 51 (Y1 direction side).

[0058] The operation of steps S412a to S412d is the same as the operation of steps S411a to S411d.

[0059] (Move to standby position: process S412e) After process S412d, the cleaning head 71J moves in the Y1 direction to the standby position outside the transport rail 52.

[0060] Subsequently, the operation flow proceeds through steps S42 and S43, which will be described later, and then moves to step S412f.

[0061] (Movement from standby position: process S412f) The cleaning head 71J moves in the Y2 direction from a standby location (standby position) outside the transport rail 51 to above the other end of the substrate S just inside the transport rail 51.

[0062] (Descending: Process S412g) Next, the cleaning head 71J descends to the correct position on the substrate S.

[0063] (Movement in the width direction of the substrate: process S412h) Next, the cleaning head 71J starts blowing and sucking air and moves in the Y2 direction to one end of the substrate S while cleaning.

[0064] (Rising: Process S412i) Next, the cleaning head 71J stops blowing and sucking air and rises above one end of the substrate S.

[0065] (Move to standby position: process S412j) The cleaning head 71J then moves in the Y2 direction to the standby position outside the transport rail 52.

[0066] [Cleaning Head Operation Example 3] Figure 12 is a flowchart of the operation of the cleaning head in operation example 3. Figure 12 is a flowchart of the cleaning head 71J moving back and forth every two rows (one-sided movement for each row, resulting in back-and-forth movement for every two rows).

[0067] The operation from process S413a to process S413c is the same as the operation from process S411a to process S411c.

[0068] (Movement in the substrate transport direction: process S413d) After S413c, the cleaning head 71J moves in the X2 direction or the opposite direction X1 direction by, for example, the package area width (PW). The amount of movement of the cleaning head 71J may be half (1 / 2) of the cleaning width (CW). Note that this amount of movement does not mean exactly half of the cleaning width (CW), but includes at least some error in the apparatus. At this time, cleaning may be continued or interrupted.

[0069] (Movement in the width direction of the substrate: process S413e) Next, the cleaning head 71J moves in the Y2 direction to one end of the substrate S while cleaning.

[0070] (Rising: Process S413f) Next, the cleaning head 71J stops blowing and sucking air and rises above one end of the substrate S.

[0071] (Move to standby position: process S413g) After that, the cleaning head 71J moves in the Y2 direction and returns to the standby position outside the transport rail 52. If the cleaning head 71J moves in the X1 direction in process S413d, the substrate S will be transported by three pitches in process S43, which will be described later, and the position of the cleaning head 71J relative to the substrate S will change.

[0072] [Termination Determination: Process S42] It is determined whether all package areas P of one substrate S have been cleaned. If cleaning is not complete, proceed to S43. If cleaning is complete, proceed to S5.

[0073] [Substrate transport: Process S43] The cleaning stage 76J stops adsorbing the substrate S and descends. The substrate S is transported by pitch feed, and the position of the cleaning head 71J relative to the substrate S moves. In operation example 1 and operation example 2, the amount of movement by pitch feed (SW) is set to the package area width (PW). The position of the cleaning head 71J shown in Figure 7 is the same as the position of the cleaning head 71J shown in Figure 6.

[0074] [Coating: Process S5] After process S4, the substrate S is transported to the coating stage 76T by the transport unit 50. The coating recognition camera 74T captures the surface of the substrate S before coating, and the coating surface is confirmed based on the image data acquired by the capture, and the position where the paste should be applied is determined. If there are no problems with the surface to be coated, the position where the paste will be applied to the substrate S supported by the coating stage 76T is confirmed and positioned.

[0075] The applied paste is photographed by the application recognition camera 74T. Based on the image acquired by the photograph, it is confirmed whether the paste has been applied accurately, and an inspection (visual inspection) of the applied paste is performed. In other words, the visual inspection confirms whether the applied paste has been applied to a predetermined location on the substrate S in a predetermined shape and in a predetermined amount. The inspection contents include, for example, the presence or absence of paste, the application area, and the application shape (excess or insufficient, overflow).

[0076] (Bonding: Process S6) The substrate S is transported to the bonding stage 46 by the transport unit 50. The substrate S placed on the bonding stage 46 is imaged by the substrate recognition camera 44, and image data is acquired. By processing the image data, the amount of displacement of the substrate S from the substrate position reference point of the die bonder 1 (in the X, Y, and θ directions) is calculated. The substrate position reference point is set in advance to a predetermined position of the bonding unit 40 as the initial setting of the device. By processing the image data, the appearance of the substrate S is inspected.

[0077] In step S3, the suction position of the bond head 41 is corrected based on the amount of displacement of the die D on the intermediate stage 31 calculated, and the die D is picked up by the collet 42. The bond head 41, which has picked up the die D from the intermediate stage 31, bonds the die D to a predetermined location on the substrate S supported by the bond stage 46. Here, the predetermined location on the substrate S is the package area P of the substrate S, or the area where the die D is already placed and the die D is to be bonded in addition to it, or the bond area of ​​the die D to be laminated bonded. The die D bonded to the substrate S is photographed by the substrate recognition camera 44, and image data is acquired. By image processing the image data, an inspection is performed to check whether the die D is bonded to the desired position (relative position inspection of the die D and the substrate S) and an appearance inspection is performed.

[0078] The bond head 41, which has bonded die D to the substrate S, is returned to the intermediate stage 31. Following the procedure described above, the next die D is picked up from the intermediate stage 31 and bonded to the substrate S. This is repeated until die D is bonded to all package areas P on the substrate S.

[0079] (Substrate unloading: Process S7) The substrate S to which the die D has been bonded is transported from the bonding section 40 to the substrate unloading section 70 by the transport section 50. In the substrate unloading section 70, the substrate S is removed and stored in the transport jig and then unloaded. The transport jig containing the substrate S is unloaded from the die bonder 1.

[0080] As described above, die D is mounted on substrate S and discharged from die bonder 1. Subsequently, for example, the transport jig containing substrate S with die D mounted on it is transported to the wire bonding process, where the electrodes of die D are electrically connected to the electrodes of substrate S via Au wire or the like. Then, substrate S is transported to the molding process, where die D and Au wire are sealed with molding resin (not shown), thereby completing the semiconductor package.

[0081] In this embodiment, the cleaning width (CW) of the cleaning head 71J is made longer than the transport pitch (substrate feed width) of the substrate S. As a result, this embodiment provides the following effects.

[0082] The substrate S has a frame area around the outer perimeter of the package area P. Even if the cleaning head 71J is positioned so that the frame area FA, located on the transport direction side of the substrate S, is within the cleaning area CA, it is still possible for one row of package areas P to fit within the cleaning area CA. This makes it possible to clean at least one row of package areas P at a time.

[0083] Since the cleaning areas CA overlap, it is possible to thoroughly clean the entire surface of the substrate S exposed between the transport rails 51 and 52. In addition, the foreign matter removal ability may be low between the nozzle area of ​​the nozzle surface 71c and the edge of the nozzle surface 71c. Since the cleaning areas CA overlap, it is possible to improve the foreign matter removal ability.

[0084] When the cleaning width (CW) is greater than or equal to a predetermined length, it is possible for each row of package areas P on the substrate S and a portion of the adjacent package areas P to be contained within the cleaning area CA. As a result, when the substrate feed width (SW) is the same as the package area width (PW), each time the substrate S is feedn by pitch, it is possible for each row of package areas P on the substrate S and a portion of the adjacent package areas P to be contained within the cleaning area CA.

[0085] When the cleaning width (CW) and substrate width feed width (SW) meet predetermined conditions, it is possible to clean a single row of package areas P multiple times. This makes it possible to remove foreign matter at a rate comparable to that achieved when cleaning a single row of package areas P by moving back and forth. The predetermined conditions are that the substrate feed width (SW) is the same as the package area width (PW), and the cleaning width (CW) is at least twice the length of the substrate feed width (SW) plus twice the length of the frame area width (FW) (CW > 2 (PW + FW)). The frame area width (FW) is the length of the frame area FA in the substrate transport direction.

[0086] Here, if the width of the frame area (FW) is very small compared to the width of the package area P (PW), the cleaning width (CW) should be at least twice the board feed width (SW). Also, for example, if the width of the frame area (FW) is less than 1 / 4 of the width of the package area P (PW), the cleaning width (CW) should be two and a half times the board feed width, but it is preferable that it be up to about three times to account for positional misalignment.

[0087] When the cleaning width (CW) is approximately the same as the width of one row of package areas (PW), the cleaning area CA may not overlap with one row of package areas P due to misalignment. Therefore, positioning by a recognition camera is necessary for accurate cleaning. In this embodiment, when the substrate S is transported by pitch feeding at intervals equal to the width of one row of package areas P based on the design data of the substrate S, it is possible for one row of package areas P to be positioned within the cleaning area CA without performing positioning by a recognition camera for each row.

[0088] In this embodiment, during a cleaning operation for a single cleaning area, the cleaning head 71J descends to an appropriate position at one end of the substrate S, cleans while moving in the width direction of the substrate S to the other end, rises, and returns to the standby position. In other words, a reciprocating cleaning motion is not performed for a single cleaning area. The cleaning head 71J moves to the standby position at a height away from the surface of the substrate S. The movement back to the standby position can be faster than when moving while cleaning. This makes it possible to shorten the cleaning time compared to when cleaning is performed with a reciprocating motion.

[0089] Furthermore, in this embodiment, the width (length in the Y direction) of the nozzle surface 71c of the cleaning head 71J may be set to the required width according to the cleaning processing time (required throughput). This makes it possible to set the amount of movement (stroke) of the cleaning head 71J according to the width of the substrate S. Therefore, cleaning according to this embodiment can accommodate various substrate widths, and it is possible to process under optimal cleaning conditions by maintaining the optimal distance between the substrate S and the cleaning head 71J while preventing poor contact during substrate transport. When the width of the nozzle surface 71c is widened, the cleaning head 71J may be provided with multiple sets of nozzles 71d, 71e in the substrate width direction. The width of the nozzle surface 71c may be the same as or longer than the length of the nozzle surface 71c in the X direction.

[0090] To further enhance the foreign matter removal effect of the cleaning head 71J, the air supply may be pulsed, causing air to be discharged intermittently from the air outlet 71f. In this case, it is preferable that the height of the nozzle surface 71c from the substrate S be higher than when discharged continuously. By varying the strength of the air blowing and sucking on the foreign matter, or by doing so intermittently, foreign matter strongly adhering to the substrate surface can be peeled off, thereby improving the foreign matter removal capability.

[0091] A distance detection sensor may be provided at the tip of the cleaning head 71J. The distance detection sensor can measure the distance to the surface of the substrate or stacked dies, so it is possible to detect whether or not the distance has deviated from the appropriate distance. If the distance has deviated from the appropriate distance, an alarm may be issued. Alternatively, an interlock function may be provided to stop the operation of the die bonder when the distance has deviated from the appropriate distance. Furthermore, a control function may be provided using the distance detection sensor to maintain a constant distance between the surface of the substrate or stacked dies and the cleaning head 71J. This prevents defects caused by nozzle contact in substrate products with substrates or dies mounted on them, even in the case of deformed substrates or when the position of the substrate or nozzle surface 71c changes due to physical influence, and also maintains appropriate foreign matter removal capabilities.

[0092] The airflow rate from the cleaning head 71J and the suction flow rate from the surrounding suction holes may be detected by a flow sensor or pressure sensor. An alarm is issued if the flow rate deviates from the appropriate value. Alternatively, an interlock function can be provided to stop the operation of the die bonder if the flow rate deviates from the appropriate value. Furthermore, by detecting the flow rate with a flow sensor or pressure sensor, a function to maintain a constant flow rate can be provided. This prevents a decrease in removal capacity due to abnormal air flow or suction flow rates, as well as defects caused by damage to the substrate or mounted die due to excessive flow, while also maintaining appropriate foreign matter removal capacity.

[0093] The disclosures made by the Discloser have been described in detail based on embodiments, but the disclosures are not limited to the embodiments described above and can be modified in various ways.

[0094] In the embodiment, an example was described in which a coating section and a foreign matter removal section are provided in the preform. The coating section may not be provided. In this case, a film-like adhesive material called a die attach film (DAF) is attached between the wafer W and the dicing tape DT.

[0095] Alternatively, a foreign matter removal unit may be provided instead of the coating unit. In this case, it is preferable to have a structure in which the syringe of the coating unit and the cleaning head can be replaced. This allows for the configuration of a foreign matter removal unit simply by replacing the syringe of the coating unit with a cleaning head, even if the device has a coating unit but lacks a foreign matter removal unit.

[0096] In the embodiment, an example was described in which the outlet of the cleaning head is located inside the suction port. The outlet may also be located outside the suction port.

[0097] In the embodiment, an example of a semiconductor manufacturing apparatus was described in which a die D is picked up from a wafer supply unit 10 by a pickup head 21 and placed on an intermediate stage 31, and the die D placed on the intermediate stage 31 is bonded to a substrate S by a bond head 41. However, the apparatus is not limited to this, and can also be applied to a semiconductor manufacturing apparatus in which the bond head 41 picks up a die D from a wafer supply unit 10 and bonds it to a substrate S.

[0098] For example, this can also be applied to semiconductor manufacturing equipment that lacks an intermediate stage 31 and a pickup head 21, and instead uses a bond head 41 to bond the die D of the wafer supply unit 10 to the substrate S.

[0099] Furthermore, this method can also be applied to a flip-chip bonder in which the die D picked up from the wafer supply unit 10 is inverted and passed to the bond head 41, and the die D is bonded to the substrate S by the bond head 41.

[0100] 50... Conveyor unit 51, 52... Conveyor rail 71J... Cleaning head 71f... Air outlet 71g... Air intake

Claims

1. A foreign matter removal device comprising: a transport section having a pair of transport rails and capable of transporting a substrate by pitch feeding; and a cleaning head having an air outlet and an air intake on its bottom surface facing the substrate and capable of moving in a direction intersecting the direction of movement of the substrate, wherein the length in the direction of movement of the substrate (cleaning width) that can remove foreign matter from the bottom surface of the cleaning head is configured to be longer than the distance the substrate is pitch fed (substrate feeding width).

2. A foreign matter removal device according to claim 1, wherein the substrate feed width is the length in the direction of movement of the substrate of a row of package areas formed in a matrix on the substrate.

3. A foreign matter removal device according to claim 2, wherein each time the substrate is pitch-feeded, at least a portion of one row of package areas and an adjacent row of package areas are located within the cleaning width.

4. A foreign matter removal device according to claim 3, wherein the cleaning width is between two and three times the substrate feeding width.

5. A foreign matter removal device according to claim 1, further comprising a control unit configured to control the cleaning head to a standby position above and outside at least one of the pair of transport rails when transporting the substrate.

6. A foreign matter removal device according to claim 5, wherein the control unit is configured to control the following: moving the cleaning head from the standby position to above one end of the substrate; lowering the cleaning head to the cleaning position of the substrate; moving the cleaning head to the other end of the substrate while performing cleaning; moving the cleaning head above the other end of the substrate; moving the cleaning head to the standby position; and pitch-feeding and transporting the substrate.

7. A foreign matter removal device according to claim 5, wherein the control unit is configured to control the following: moving the cleaning head from the standby position to above one end of the substrate; lowering the cleaning head to the cleaning position of the substrate; moving the cleaning head to the other end of the substrate while performing cleaning; moving the cleaning head in the direction of movement of the substrate or in the opposite direction to the direction of movement; moving the cleaning head to the one end of the substrate while performing cleaning; moving the cleaning head above the one end of the substrate; moving the cleaning head to the standby position; and pitch-feeding the substrate.

8. A foreign matter removal device according to claim 7, wherein the amount by which the control unit moves the cleaning head in the direction of movement of the substrate or in the direction opposite to the direction of movement is half the cleaning width.

9. A foreign matter removal device according to claim 1, wherein the direction of movement of the cleaning head is perpendicular to the direction of movement of the substrate.

10. A die bonding apparatus comprising: a foreign matter removal apparatus according to claim 1; and a bonding unit installed downstream of the foreign matter removal apparatus for bonding a die onto a substrate or an already bonded die.

11. A method for removing foreign matter using the foreign matter removal device of claim 1, comprising the steps of: moving the cleaning head from a standby position to above one end of the substrate; lowering the cleaning head to a cleaning position on the substrate; moving the cleaning head to the other end of the substrate while performing cleaning; moving the cleaning head above the other end of the substrate; moving the cleaning head to the standby position; and transporting the substrate by pitch feed.

12. A method for manufacturing a semiconductor device, comprising the foreign matter removal method according to claim 11.

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