Correction processing method and correction processing device

Abstract

A correction processing method according to the present invention involves: forming a stress adjustment film on a distorted substrate; generating a displacement data group for each first coordinate of the substrate by measuring displacement in a height direction and displacement in the vertical and horizontal directions of a pattern at a plurality of coordinates of the substrate; generating a correction amount data group by calculating a correction amount on the basis of the displacement data group and a film thickness value of the stress adjustment film; and modifying the stress adjustment film by causing the stress adjustment film to be irradiated with an energy beam for each second coordinate in a depth direction on the basis of the correction amount data group and the film thickness value of the stress adjustment film, thereby correcting distortion by changing the stress, and correcting deviation of the pattern.

Description

Correction processing method and correction processing apparatus

[0001] This disclosure relates to a correction processing method and a correction processing apparatus.

[0002] Patent Document 1 describes a system for correcting wafer overlays. Such a system may include several components. A measurement module is configured to measure the curvature of a substrate, generating a curvature measurement that maps Z-height deviations on the substrate to one or more reference Z-height values. A coating module is configured to coat the back surface of the wafer with a radiation-sensitive material. A controller is configured to generate an overlay correction pattern that determines adjustments to internal stresses at specific locations on the substrate based on the substrate curvature measurement, such that a first given location on the substrate has different internal stress adjustments defined compared to a second given location on the substrate within the overlay correction pattern. An imaging module is configured to expose the back surface to a pattern of chemical rays based on the overlay correction pattern. The module is configured to develop the radiosensitive material after exposure to a pattern of chemical rays, resulting in the radiosensitive material forming a relief pattern on the back surface of the substrate. The etching module is configured to etch the back surface of the substrate using the relief pattern as an etching mask, thereby reducing the overlay error of the substrate. In some embodiments, all of these modules are located on a common platform from which an automated substrate handling system can automatically transfer the substrate between modules. Thus, an all-in-one tool is fabricated to correct the overlay. For example, a wafer with an overlay error can be loaded into this tool, the system then measures, calculates and applies the correction, and then the wafer with the corrected or reduced overlay error is returned.

[0003] Japanese Patent Publication No. 2018-041080

[0004] This disclosure provides a correction processing method and a correction processing apparatus that can correct pattern misalignment and substrate distortion.

[0005] A correction method according to one aspect of the present disclosure comprises: forming a stress adjustment film on a substrate in which distortion has occurred; measuring the displacement in the height direction and the displacement of the pattern in the longitudinal and transverse directions at multiple coordinates of the substrate to generate a group of displacement data for each first coordinate of the substrate; calculating a correction amount based on the group of displacement data and the film thickness value of the stress adjustment film to generate a group of correction amount data; and modifying the stress adjustment film by irradiating it with an energy beam in the depth direction at each second coordinate based on the group of correction amount data and the film thickness value of the stress adjustment film, thereby changing the stress to correct the distortion and correct the pattern misalignment.

[0006] According to this disclosure, pattern misalignment and substrate distortion can be corrected.

[0007] Figure 1 is a cross-sectional plan view showing an example of a substrate processing system in one embodiment of the present disclosure. Figure 2 is a schematic cross-sectional view showing an example of a film deposition apparatus in one embodiment of the present disclosure. Figure 3 is a schematic cross-sectional view showing an example of an irradiation apparatus in one embodiment of the present disclosure. Figure 4 is a diagram showing an example of detecting positional fluctuations due to strain and misalignment by overlay marks. Figure 5 is a diagram showing an example of misalignment with respect to the strain shape of the substrate. Figure 6 is a diagram showing an example of the strain direction of the substrate due to film deposition. Figure 7 is an explanatory diagram showing an example of correcting substrate strain and misalignment in this embodiment. Figure 8 is an explanatory diagram showing an example of stress fluctuation due to a laser. Figure 9 is an explanatory diagram showing an example of decomposing misalignment represented by a vector map into a correction model. Figure 10 is a diagram showing an example of the misalignment component of the correction model. Figure 11 is a flowchart showing an example of a correction processing method in this embodiment. Figure 12 is a cross-sectional plan view showing an example of a substrate processing system in a modified example.

[0008] The embodiments of the disclosed correction processing method and correction processing apparatus will be described in detail below with reference to the drawings. However, the disclosed technology is not limited to the embodiments described below.

[0009] In recent years, to achieve high integration in semiconductor devices, memory cells and other components have been stacked to a high degree of density. In high-density stacking, multiple films of different types are deposited on a substrate, increasing the number of annealing treatments and the total substrate thickness. When multiple films of different types are stacked, for example, during annealing, the different shrinkage rates of the film types cause distortion in the substrate. In the following explanation, warping refers to the overall deformation of the substrate, while distortion refers to the collection of multiple local deformations on the substrate. In other words, in the following explanation, distortion includes warping. Furthermore, as the number of films stacked on the substrate increases, the amount of distortion in the substrate increases, and the distortion shape of the substrate becomes more complex. In addition, with multi-layer wiring, distortion becomes more complex due to the embedding of metal materials in the patterns, device structures such as memory cell sections and peripheral sections, and differences in processing. As a result, the misalignment of patterns in each layer caused by substrate deformation, i.e., the misalignment of patterns, increases and becomes more complex. Therefore, it is expected that correction of pattern misalignment and substrate distortion will be achieved.

[0010] [Configuration of Substrate Processing System 1] Figure 1 is a cross-sectional plan view showing an example of a substrate processing system in one embodiment of the present disclosure. The substrate processing system 1 shown in Figure 1 is a substrate processing system capable of performing various processes such as plasma processing on a single substrate (e.g., wafer, semiconductor wafer). Note that the substrate processing system 1 is an example of a correction processing device.

[0011] As shown in Figure 1, the substrate processing system 1 comprises a transfer module 10, four process modules 20, a loader module 30, two load lock modules 40, a measurement module 60, and an irradiation module 70. In the following description, the transfer module 10, process modules 20, loader module 30, and load lock modules 40 may be referred to as TM10, PM20, LM30, and LLM40, respectively.

[0012] The transfer module 10 has a roughly pentagonal shape in plan view. The transfer module 10 has a vacuum chamber, and a transport mechanism 11 is arranged inside. The transport mechanism 11 has a guide rail (not shown), two arms 12, and forks 13 positioned at the ends of each arm 12 to support the substrate. Each arm 12 is a SCARA arm type and is configured to be rotatable and extendable. The transport mechanism 11 moves along the guide rail and transports the substrate between the process module 20, the load lock module 40, the measurement module 60, and the irradiation module 70. The transport mechanism 11 is not limited to the configuration shown in Figure 1, as it only needs to be capable of transporting the substrate between the process module 20, the load lock module 40, the measurement module 60, and the irradiation module 70. For example, each arm 12 of the transport mechanism 11 may be configured to be rotatable, extendable, and also to be vertically oriented.

[0013] The process module 20 is arranged around the long side of the transfer module 10 and connected to the transfer module 10. The process module 20 has a processing chamber and a cylindrical stage 21 (mounting platform) located inside. The stage 21 has a plurality of three thin rod-shaped lift pins 22 that can protrude from the top surface. Each lift pin 22 is arranged on the same circumference in a plan view and, by protruding from the top surface of the stage 21, supports and lifts the substrate placed on the stage 21, and by retracting into the stage 21, places the supported substrate on the stage 21. After the substrate is placed on the stage 21, the process module 20 reduces the pressure inside, introduces a processing gas, and then applies high-frequency power inside to generate plasma, and performs plasma processing on the substrate with the plasma. The transfer module 10 and the process module 20 are separated by a gate valve 23 that can be opened and closed.

[0014] The process module 20 has a control unit 24. The control unit 24 controls each part of the process module 20. The control unit 24 includes a storage unit that stores the basic operations for controlling the operation of the process module 20. In addition to plasma processing, the process module 20 may perform other processes, such as coating processes such as spin coating. That is, the process module 20 may be a device that performs various processes such as CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), coating, and annealing.

[0015] The loader module 30 is positioned opposite the transfer module 10. The loader module 30 is rectangular in shape and is an atmospheric transport chamber maintained at atmospheric pressure. Two load lock modules 40 are connected to one side of the loader module 30 along its longitudinal direction. Three load ports 31 are connected to the other side of the loader module 30 along its longitudinal direction. FOUPs (Front-Opening Unified Pods) (not shown), which are containers for housing multiple substrates, are placed on the load ports 31. An aligner 32 is connected to one side of the loader module 30 along its short direction. A transport mechanism 35 is also located inside the loader module 30.

[0016] The aligner 32 aligns the substrate. The aligner 32 has a rotating stage 33 that is rotated by a drive motor (not shown). The rotating stage 33 has a diameter smaller than the diameter of the substrate, for example, and is configured to rotate with the substrate placed on its upper surface. An optical sensor 34 for detecting the outer edge of the substrate is provided near the rotating stage 33. In the aligner 32, the optical sensor 34 detects the center position of the substrate and the direction of the notch relative to the center of the substrate, and the substrate is transferred to the fork 37 (described later) so that the center position and the direction of the notch of the substrate are at a predetermined position and direction. As a result, the transport position of the substrate is adjusted so that the center position and the direction of the notch of the substrate are at a predetermined position and direction within the load lock module 40.

[0017] The transport mechanism 35 includes a guide rail (not shown), an arm 36, and a fork 37. The arm 36 is a SCARA arm type and is configured to move freely along the guide rail, as well as to be able to rotate, extend and retract, and move up and down. The fork 37 is positioned at the end of the arm 36 to support the substrate. In the loader module 30, the transport mechanism 35 transports the substrate between the FOUP, aligner 32, and load lock module 40 placed on each load port 31. Note that the transport mechanism 35 only needs to be capable of transporting the substrate between the FOUP, aligner 32, and load lock module 40, and is not limited to the configuration shown in Figure 1.

[0018] The load lock module 40 is positioned between the transfer module 10 and the loader module 30. The load lock module 40 has a variable internal pressure chamber that can be switched between vacuum and atmospheric pressure, and has a cylindrical stage 41 positioned inside. When loading a substrate from the loader module 30 to the transfer module 10, the load lock module 40 maintains atmospheric pressure inside to receive the substrate from the loader module 30, then reduces the internal pressure to load the substrate into the transfer module 10. Similarly, when unloading a substrate from the transfer module 10 to the loader module 30, the load lock module 40 maintains a vacuum inside to receive the substrate from the transfer module 10, then increases the internal pressure to atmospheric pressure to load the substrate into the loader module 30. The stage 41 has a plurality of three thin, rod-shaped lift pins 42 that can protrude from the top surface. Each lift pin 42 is arranged on the same circumference in a plan view, and protrudes from the upper surface of the stage 41 to support and lift the substrate, and retracts into the stage 41 to place the supported substrate onto the stage 41. The load lock module 40 and the transfer module 10 are separated by a gate valve (not shown) that can be opened and closed. The load lock module 40 and the loader module 30 are also separated by a gate valve (not shown) that can be opened and closed.

[0019] The measurement module 60 is located on the short side of the transfer module 10 opposite the load lock module 40 and is connected to the transfer module 10. The measurement module 60 has a measurement chamber and a cylindrical stage 61 (mounting platform) located inside it. The measurement chamber of the measurement module 60 is an example of a second chamber that measures the height displacement and the longitudinal and lateral displacement of the pattern at multiple coordinates of the substrate. The stage 61 has a plurality of three thin rod-shaped lift pins 62 that can protrude from the top surface. Each lift pin 62 is arranged on the same circumference in a plan view and, by protruding from the top surface of the stage 61, supports and lifts the substrate placed on the stage 61, and by retracting into the stage 61, places the supported substrate on the stage 61. After the substrate is placed on the stage 61, the measurement module 60 is controlled to measure the height displacement and the longitudinal and lateral displacement of the pattern at multiple coordinates of the substrate. The transfer module 10 and the measurement module 60 are separated by an openable and closable gate valve 63.

[0020] The measurement module 60 has a control unit 64. The control unit 64 controls each part of the measurement module 60. The control unit 64 includes a storage unit that stores the basic operations for controlling the operation of the measurement module 60. The control unit 64 also controls the measurement module 60 to measure the height displacement and the pattern's vertical and horizontal displacement at multiple coordinates of the substrate. The control unit 64 generates a set of displacement data for each first coordinate of the substrate from the measured height displacement and pattern's vertical and horizontal displacement at multiple coordinates of the substrate. The control unit 64 transmits the generated set of displacement data to the control device 50.

[0021] The irradiation module 70 is located on the short side of the transfer module 10 opposite the load lock module 40 and is connected to the transfer module 10. The irradiation module 70 has a processing chamber and a cylindrical stage 71 (mounting platform) located inside. The stage 71 has a plurality of lift bodies 72 that can project from the top surface. Each lift body 72 is arranged on the same circumference in a plan view and supports and lifts the substrate placed on the stage 71 by projecting from the top surface of the stage 71, and places the supported substrate onto the stage 71 by retracting into the stage 71. The lift bodies 72 may be provided to project from the side of the stage 71 to above the top surface of the stage 71, as long as they can support the substrate. Furthermore, the shape of the lift bodies 72 that supports the outer periphery and / or bevel portion of the substrate with points or lines is suitable. After the substrate is placed on the stage 71, the irradiation module 70 is controlled to irradiate the stress adjustment film with an energy beam to modify it, based on the correction amount data set received from the control device 50 and the film thickness value of the stress adjustment film. The stress adjustment film is formed, for example, on the back surface of the substrate. The irradiation module 70 is controlled to correct the strain by changing the stress in the substrate and correcting pattern misalignment by irradiating the stress adjustment film with an energy beam to modify it. The transfer module 10 and the irradiation module 70 are separated by a gate valve 73 that can be opened and closed.

[0022] The irradiation module 70 has a control unit 74. The control unit 74 controls each part of the irradiation module 70. The control unit 74 includes a storage unit that stores the basic operations for controlling the operation of the irradiation module 70. The control unit 74 also controls the irradiation module 70 to modify the stress adjustment film by irradiating it with an energy beam in the depth direction at second coordinate intervals, based on the correction amount data group received from the control device 50 and the film thickness value of the stress adjustment film.

[0023] The substrate processing system 1 has a control device 50. The control device 50 is, for example, a computer and includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or auxiliary storage device and controls the operation of each component of the substrate processing system 1. RAM, ROM, and auxiliary storage device, etc. are examples of storage units and include a database.

[0024] The control device 50 also includes a communication unit that communicates (connects) with the control unit 24 of the process module 20, the control unit 64 of the measurement module 60, and the control unit 74 of the irradiation module 70. The control device 50 receives a group of displacement data from the control unit 64 of the measurement module 60. Based on the group of displacement data and the film thickness value of the stress adjustment film, the control device 50 calculates a correction amount and generates a group of correction amount data. In other words, the control device 50 is an example of a data processing unit that generates a group of correction amount data for a second coordinate from a group of displacement data for a first coordinate of the substrate. The control device 50 transmits the generated group of correction amount data to the control unit 74 of the irradiation module 70. The control device 50 also has a database in its storage unit and stores various data in the database, such as a group of displacement data before and after the correction process, measurement data of the misalignment after the correction process, and a group of target data. The various data stored in the database are used in the k-value modeling described later. When used in k-value modeling, a correction model may be generated for each substrate W, or a correction model may be generated using the moving average value of multiple substrates W. Furthermore, the memory unit of the control device 50 stores the learned models, which will be described later.

[0025] [Configuration of Process Module 20] Next, the configuration of the film deposition apparatus will be described as an example of the process module 20 using Figure 2. Figure 2 is a schematic cross-sectional view showing an example of a film deposition apparatus in one embodiment of the present disclosure. In the following description, the process module 20 will also be referred to as the film deposition apparatus 20. The film deposition apparatus 20 illustrated in Figure 2 is configured as, for example, an RLSA® microwave plasma type plasma processing apparatus.

[0026] The film deposition apparatus 20 comprises an apparatus body 20a and a control unit 24 that controls the apparatus body 20a. The apparatus body 20a includes a chamber 201, a stage 21, a microwave introduction mechanism 203, a gas supply mechanism 204, and an exhaust mechanism 205.

[0027] The chamber 201 is formed in a substantially cylindrical shape, and an opening 210 is formed in the approximate center of the bottom wall 201a of the chamber 201. The bottom wall 201a is provided with an exhaust chamber 211 that communicates with the opening 210 and protrudes downward. An opening 217 is formed in the side wall 201s of the chamber 201 through which the substrate W passes, and the opening 217 is opened and closed by a gate valve 23. The chamber 201 is an example of a processing chamber for PM20, and is an example of a first chamber for forming a stress adjustment film on the substrate W.

[0028] The substrate W to be processed is placed on the stage 21. The stage 21 is roughly disc-shaped and made of ceramics such as AlN. The stage 21 is supported by a cylindrical support member 212 made of ceramics such as AlN that extends upward from approximately the center of the bottom of the exhaust chamber 211. An edge ring 213 is provided on the outer edge of the stage 21 so as to surround the substrate W placed on the stage 21. Inside the stage 21, a lifting pin (not shown) for raising and lowering the substrate W is provided so as to be able to protrude from and retract relative to the upper surface of the stage 21.

[0029] Furthermore, a resistance-heating type heater 214 is embedded inside the stage 21, and the heater 214 heats the substrate W placed on the stage 21 according to the power supplied from the heater power supply 215. Also, a thermocouple (not shown) is inserted into the stage 21, and the temperature of the substrate W can be controlled, for example, from 300 to 850°C based on the signal from the thermocouple. Furthermore, within the stage 21, an electrode 216 of approximately the same size as the substrate W is embedded above the heater 214, and a bias power supply 219 is electrically connected to the electrode 216. The bias power supply 219 supplies bias power of a predetermined frequency and magnitude to the electrode 216. Ions are drawn into the substrate W placed on the stage 21 by the bias power supplied to the electrode 216. Note that the bias power supply 219 may not be provided depending on the characteristics of the plasma processing.

[0030] The microwave introduction mechanism 203 is located at the top of the chamber 201 and includes an antenna 221, a microwave output unit 222, and a microwave transmission mechanism 223. The antenna 221 has a number of slots 221a, which are through holes. The microwave output unit 222 outputs microwaves. The microwave transmission mechanism 223 guides the microwaves output from the microwave output unit 222 to the antenna 221.

[0031] A dielectric window 224 made of dielectric material is provided below the antenna 221. The dielectric window 224 is supported by a ring-shaped support member 232 provided on the upper part of the chamber 201. A slow wave plate 226 is provided above the antenna 221. A shielding member 225 is provided above the antenna 221. A flow channel (not shown) is provided inside the shielding member 225, and the shielding member 225 cools the antenna 221, the dielectric window 224, and the slow wave plate 226 with a fluid such as water flowing through the flow channel.

[0032] The antenna 221 is formed from, for example, a copper or aluminum plate with a silver or gold-plated surface, and has a plurality of slots 221a for radiating microwaves arranged in a predetermined pattern. The arrangement pattern of the slots 221a is set appropriately so that microwaves are radiated evenly. An example of a preferred pattern is a radial line slot, in which multiple pairs of slots 221a are arranged concentrically, with two T-shaped slots 221a forming one pair. The length and spacing of the slots 221a are appropriately determined according to the effective wavelength (λg) of the microwaves. The slots 221a may also have other shapes, such as circular or arc-shaped. Furthermore, the arrangement of the slots 221a is not particularly limited and may be arranged in a spiral or radial pattern in addition to concentric circles. The pattern of the slots 221a is set appropriately so that the microwave radiation characteristics result in a desired plasma density distribution.

[0033] The slow wave plate 226 is made of quartz, ceramics (Al ２ O ３ The slow wave plate 226 is made of a dielectric material having a dielectric constant greater than that of a vacuum, such as polytetrafluoroethylene or polyimide. The slow wave plate 226 has the function of shortening the wavelength of microwaves to that of a vacuum, thereby reducing the size of the antenna 221. The dielectric window 224 is also made of a similar dielectric material.

[0034] The thicknesses of the dielectric window 224 and the slow wave plate 226 are adjusted so that the equivalent circuit formed by the slow wave plate 226, antenna 221, dielectric window 224, and plasma satisfies the resonance conditions. By adjusting the thickness of the slow wave plate 226, the phase of the microwaves can be adjusted. By adjusting the thickness of the slow wave plate 226 so that the junction of the antenna 221 becomes an antinode of the standing wave, microwave reflection can be minimized and the microwave radiation energy can be maximized. In addition, by using the same material for the slow wave plate 226 and the dielectric window 224, interfacial reflection of microwaves can be prevented.

[0035] The microwave output unit 222 has a microwave oscillator. The microwave oscillator may be a magnetron type or a solid-state type. The frequency of the microwaves generated by the microwave oscillator is, for example, between 300 MHz and 10 GHz. As an example, the microwave output unit 222 outputs microwaves at 2.45 GHz using a magnetron type microwave oscillator. Microwaves are an example of electromagnetic waves.

[0036] The microwave transmission mechanism 223 includes a waveguide 227 and a coaxial waveguide 228. It may also include a mode conversion mechanism. The waveguide 227 guides the microwaves output from the microwave output unit 222. The coaxial waveguide 228 includes an inner conductor connected to the center of the antenna 221 and an outer conductor outside of it. The mode conversion mechanism is provided between the waveguide 227 and the coaxial waveguide 228. The microwaves output from the microwave output unit 222 propagate through the waveguide 227 in TE mode and are converted from TE mode to TEM mode by the mode conversion mechanism. The microwaves converted to TEM mode propagate through the coaxial waveguide 228 to the slow wave plate 226 and are radiated from the slow wave plate 226 into the chamber 201 through the slot 221a of the antenna 221 and the dielectric window 224. Furthermore, a tuner (not shown) is provided in the middle of the waveguide 227 to match the impedance of the load (plasma) in the chamber 201 to the output impedance of the microwave output unit 222.

[0037] The gas supply mechanism 204 has a shower ring 242 provided in a ring shape along the inner wall of the chamber 201. The shower ring 242 has an annular flow path 266 provided inside and a number of discharge ports 267 connected to the flow path 266 and opening to the inside thereof. A gas supply unit 263 is connected to the flow path 266 via a pipe 261. The gas supply unit 263 is provided with a plurality of gas sources and a plurality of flow rate controllers. In one embodiment, the gas supply unit 263 is configured to supply at least one process gas from a corresponding gas source to the shower ring 242 via a corresponding flow rate controller. The gas supplied to the shower ring 242 is supplied into the chamber 201 from the plurality of discharge ports 267.

[0038] Also, when a silicon-containing film is formed on the substrate W, the gas supply unit 263 supplies a silicon-containing gas, a nitrogen-containing gas, an oxygen-containing gas, and a rare gas (noble gas) controlled to a predetermined flow rate into the chamber 201 via the shower ring 242. In the present embodiment, the silicon-containing gas is, for example, a gas containing a halogen-based raw material, such as a gas containing dichlorosilane (DCS), Cl-based diisopropylaminosilane (DIPAS), Cl-based trisilylamine (TSA), etc. Further, the silicon-containing gas is, for example, a gas containing a non-halogen-based raw material, such as a gas containing trisilylamine (TSA), Si-NH ２ - based gas, etc. Also, in the present embodiment, the nitrogen-containing gas is, for example, N ２ gas. Also, in the present embodiment, the oxygen-containing gas is O ２ gas. Also, in the present embodiment, the rare gas is, for example, Ar gas. Instead of Ar gas, other rare gases such as He gas may be used.

[0039] The exhaust mechanism 205 has an exhaust chamber 211, an exhaust pipe 281 provided on the side wall of the exhaust chamber 211, and an exhaust device 282 connected to the exhaust pipe 281. The exhaust device 282 has a vacuum pump, a pressure control valve, etc.

[0040] The control unit 24 has a memory, a processor, and an input / output interface. The memory stores programs executed by the processor and recipes including conditions for each process. The processor executes the programs read from the memory and controls each part of the apparatus main body 20a via the input / output interface based on the recipes stored in the memory. Note that the memory is an example of a storage unit.

[0041] For example, the control unit 24 controls each part of the film forming apparatus 20 so as to form a stress adjustment film among the correction processing methods described later. To give a detailed example, the control unit 24 executes a process of loading and preparing a substrate W in an inverted front-back state into the chamber 201. The control unit 24 executes a film forming process of forming a stress adjustment film on the back surface of the substrate W. For example, in the film forming process, a silicon-containing gas and a nitrogen-containing gas are supplied to generate plasma, and the generated plasma is used to form a silicon nitride film as a stress adjustment film on the back surface of the substrate W. Also, for example, in the film forming process, a silicon-containing gas and an oxygen-containing gas may be supplied to generate plasma, and the generated plasma may be used to form a silicon oxide film as a stress adjustment film on the back surface of the substrate W.

[0042] [Configuration of the irradiation module 70] Next, the configuration of an irradiation device will be described as an example of the irradiation module 70 using FIG. 3. FIG. 3 is a schematic cross-sectional view showing an example of an irradiation device in an embodiment of the present disclosure. In the following description, the irradiation module 70 is also referred to as the irradiation device 70. The irradiation device 70 illustrated in FIG. 3 is configured as, for example, a laser irradiation device including a laser oscillator.

[0043] The irradiation device 70 includes an apparatus main body 70a and a control unit 74 that controls the apparatus main body 70a. The apparatus main body 70a has a chamber 301, a stage 71, a laser oscillator 303, a condenser lens 304, a gas supply mechanism 306, and an exhaust mechanism 309.

[0044] Chamber 301 is formed in a substantially cylindrical shape, and a stage 71 is positioned approximately in the center of the bottom surface of chamber 301. An opening 312 through which the substrate W passes is formed in the side wall of chamber 301, and the opening 312 is opened and closed by a gate valve 73. Chamber 301 is an example of a processing chamber for the irradiation module 70, and is an example of a third chamber that irradiates the stress adjustment film with an energy beam in the depth direction based on a set of correction amount data and the film thickness value of the stress adjustment film.

[0045] The substrate W to be processed is placed on the stage 71 with its front and back sides reversed. The stage 71 is roughly disc-shaped and made of ceramics such as AlN. Inside the stage 71, lifting pins (not shown) for raising and lowering the substrate W are provided so as to be able to protrude from and retract relative to the upper surface of the stage 71.

[0046] The laser oscillator 303 is located at the top of the chamber 301. The laser oscillator 303 irradiates the stress adjustment film deposited on the back surface of the substrate W with laser light 305, for example, having a wavelength in the range of infrared to ultraviolet, via a focusing lens 304. The laser oscillator 303 can use, for example, a YAG (Yttrium Aluminum Garnet) laser. The laser light 305 is scannable within the plane of the substrate W and can be controlled at intervals of, for example, about 10 μm. Alternatively, the laser light 305 may be made scannable within the plane of the substrate W by moving the stage 71 in the XY direction (horizontal direction). The laser light 305 is irradiated for each second coordinate based, for example, on a group of correction amount data received from the control device 50 and the film thickness value of the stress adjustment film. In other words, the laser light 305 is irradiated to coordinates specified in the laser impregnation map corresponding to the back surface of the substrate W, and the stress adjustment film or the substrate W at those coordinates is modified. When the stress-adjusting film or substrate W is modified, the stress at that coordinate changes, correcting the strain of the substrate W and correcting any misalignment of the pattern. The laser beam 305 is an example of an energy beam. The irradiation device 70 may be a mechanism that irradiates with a charged particle beam instead of the laser oscillator 303.

[0047] Furthermore, multiple laser oscillators 303 may be provided. For example, multiple laser oscillators 303 may be arranged on the back surface of the substrate W at equal intervals in the X and Y directions. Of the arranged multiple laser oscillators 303, the laser light 305 may be irradiated only from the laser oscillator 303 corresponding to the second coordinate from which the laser light 305 is irradiated. In this case, the processing time for irradiating the laser light can be shortened.

[0048] The gas supply mechanism 306 is connected to, for example, the upper part of the chamber 301 via piping 307. A control valve 308 is provided in the piping 307. The gas supply mechanism 306 is provided with a plurality of gas sources and a plurality of flow controllers. In one embodiment, the gas supply mechanism 306 is configured to supply at least one processing gas into the chamber 301 from a corresponding gas source via a corresponding flow controller. Examples of processing gases include nitrogen-containing gases and noble gases such as Ar gas. The control valve 308 controls the supply of processing gas to the chamber 301.

[0049] The exhaust mechanism 309 is connected to, for example, the bottom of the chamber 301 via piping 310. A pressure control valve 311 is provided in the piping 310. A vacuum pump is provided in the exhaust mechanism 309. In one embodiment, the exhaust mechanism 309 is configured to adjust the pressure inside the chamber 301 by controlling the vacuum pump and the pressure control valve 311.

[0050] The control unit 74 includes a memory, a processor, and an input / output interface. The memory stores a program executed by the processor, as well as a recipe containing conditions for each process. The processor executes the program read from the memory and controls various parts of the main unit 70a via the input / output interface based on the recipe stored in the memory. Note that the memory is an example of a storage unit.

[0051] For example, the control unit 74 controls each part of the irradiation device 70 to perform modification of the stress adjustment film, as described later in the substrate processing method. To give a detailed example, the control unit 74 carries in the step of loading a substrate W with a stress adjustment film formed on its back surface into the chamber 301. The control unit 74 irradiates the stress adjustment film on the back surface of the substrate W or the substrate W with laser light 305 at coordinates specified in the laser etching map to modify it, thereby correcting the distortion of the substrate W and correcting any misalignment of the pattern.

[0052] [Distortion of Substrate W and Pattern Misalignment] Next, distortion of the substrate W and pattern misalignment will be explained using Figures 4 to 6. Figure 4 is a diagram showing an example of detecting positional variation due to distortion and misalignment due to overlay marks. The variation example 400 shown in Figure 4 shows an overview of positional variation due to distortion (IPD: In Plane Displacement) at the alignment position. Distortion is mainly caused by distortion of the substrate W. In variation example 400, in the cross-section of the substrate W, the overlay mark 403a in the flat state 401 moves a distance of 405 min in the planar direction of the substrate W to position 404 in the distorted state 402. At this time, in the planar view 406, the center of the overlay mark 403a moves to the center of position 404, as indicated by the distance 405, and appears as the overlay mark 404a. In detecting misalignment, for example, in superpositions such as between patterns, lithography, and bonding, the direction and amount of misalignment can be detected based on the spacing between overlay marks 404a and 403b. In other words, by using overlay marks, a set of displacement data for each first coordinate of the substrate W can be generated from the height displacement and the vertical and horizontal displacement of the pattern at multiple coordinates of the substrate W. IPD, in other words, is the estimated positional displacement on the wafer surface obtained from strain measurement.

[0053] Figure 5 shows an example of misalignment due to the strain shape of the substrate. Table 407 in Figure 5 shows strain shapes due to simple tension or compression and strain shapes that are asymmetric in the X and Y directions. The strain shape due to simple tension or compression is a bowl-shaped deformation, and the direction of misalignment is radial from the center, so the strain can be corrected by, for example, film deposition on the back surface of the substrate W. On the other hand, in the case of a strain shape that is asymmetric in the X and Y directions, the deformation state differs between the X and Y directions of the substrate W, and the direction of misalignment becomes more complex, so, for example, simply depositing a film on the back surface of the substrate W will result in insufficient correction in either the X or Y direction, making it difficult to correct down to the chip size. In other words, in this embodiment, in order to correct the misalignment arising from a complex strain shape that is asymmetric in the X and Y directions, for example, laser light 305 is fired at a stress adjustment film deposited on the back surface of the substrate W to change the stress.

[0054] Figure 6 shows an example of the direction of strain on a substrate due to film deposition. Figure 6 shows examples of film types and strain directions for stress-adjusting films deposited on the back surface of a substrate W. In Example 408, when a silicon nitride film (SiN) is deposited on the back surface (upper side in Figure 6) of a silicon substrate (Si), the silicon nitride film applies compressive stress, and tensile stress is applied to the front surface of the silicon substrate. In Example 409, when a silicon oxide film (SiO) is deposited on the back surface (upper side in Figure 6) of a silicon substrate (Si), the silicon oxide film applies tensile stress, and compressive stress is applied to the front surface of the silicon substrate. In other words, the direction of stress (strain direction) applied to the substrate W can be corrected depending on the type of stress-adjusting film (for example, a silicon-containing film). In addition, depending on the type of stress-adjusting film, it may be possible to adjust the tensile and compressive directions using deposition parameters.

[0055] [Correction of Substrate Distortion and Alignment Misalignment] Next, the correction of substrate distortion and alignment misalignment will be explained using Figures 7 to 10. Figure 7 is an explanatory diagram showing an example of the correction of substrate distortion and alignment misalignment in this embodiment. Figure 7 explains the general flow of correction for the amount of distortion in a certain linear direction passing through the center of the substrate W. In the following explanation, the case in which a stress adjustment film 451 is deposited on the back surface of the silicon substrate 450 of the substrate W will be explained as an example. Also, in Figure 7, multiple films deposited on the surface of the substrate W are omitted. In the following explanation, the correction will be explained as an example at the wafer (substrate W) level, but the correction can also be performed in parallel as separate parameters at the shot level and chip level.

[0056] Graph 410, showing the amount of strain in the substrate W before correction, illustrates an example of the initial state of strain before the stress adjustment film 451 is deposited on the back surface of the silicon substrate 450. In graph 410, the amount of strain is large at two locations: the edges of the substrate W and near the center. In correcting substrate strain and misalignment, first, the stress adjustment film 451 is deposited on the back surface of the silicon substrate 450 to alleviate the multiplier component strain (bowl shape) of the substrate W. Here, the multiplier component of the substrate W is the component of the coefficients k3 and k4 of the misalignment component of the correction model described later (see Figure 10). Note that in the deposition of the stress adjustment film 451 on the back surface, the amount of strain may be intentionally worsened at this stage in accordance with the modification of the stress adjustment film 451. Also, depending on the amount of strain in the initial state, the stress adjustment film 451 may not be deposited.

[0057] When a stress adjustment film 451 is deposited on the back surface of the silicon substrate 450, for example, the amount of strain in graph 410 is corrected as shown in graph 411. For example, in graph 411, the strain of the scalar component of the substrate W is relaxed, and the amount of strain at the edges of the substrate W is corrected. On the other hand, the amount of strain at two locations near the center of the substrate W has increased. Note that graph 411 shows an example of the amount of strain remaining after film deposition.

[0058] Next, for example, laser light 305 is directed at the stress adjustment film 451 corresponding to two locations with large amounts of strain near the center of the substrate W to modify the stress adjustment film 451. The laser light 305 may be directed from a laser oscillator 303 located on the lower side of the chamber toward the back surface of the substrate W, or the substrate W may be inverted and directed from a laser oscillator 303 located on the upper side of the chamber toward the back surface of the substrate W. In Figure 7, the modified stress adjustment film 451 is represented as the modified portion 452. When a part of the stress adjustment film 451 is modified, for example, the amount of strain in graph 411 is corrected as shown in graph 412. That is, the amount of strain in graph 410 in the initial state is corrected as shown in graph 412. Graph 412 shows an example of the residue of strain after film formation.

[0059] Figure 8 is an explanatory diagram showing an example of stress fluctuation caused by a laser. In Figure 8, laser light 305 is injected into the stress adjustment film 451 of the substrate W or the silicon substrate 450, and only a certain region in the depth direction (modified region 452) is modified. The modification is, for example, polycrystalline (polycrystalline silicon (Si)) formation and void formation. Alternatively, the modification may be, for example, the formation of amorphous silicon (Si). In the formation of amorphous silicon, lattice defects such as dislocations and a high-pressure phase of amorphous silicon and silicon are formed. The modified region 452 thus becomes a stress concentration point. That is, strain occurs in the modified region 452 as shown by arrow 422, and compressive stress is applied to the stress adjustment film 451 or the silicon substrate 450, for example, as shown by arrow 423. In this embodiment, the modified region 452 is formed by injecting laser light 305 according to the coordinates of the back surface of the substrate W, so localized control is possible.

[0060] In other words, the first coordinates of the displacement data set in which the strain is measured and the second coordinates on which the energy beam is irradiated may be the same or different. For example, if the first coordinates of the displacement data set are X,Y = 1 to 100, 1 to 100, then there will be 10,000 measurement points. In contrast, the second coordinates on which the energy beam is irradiated may be the same 10,000 points as the first coordinates, or they may be fewer than 10,000 points, such as 5,000 points, to correspond to the correction of the strain and misalignment.

[0061] Since the modified portion 452 is formed inside the stress adjustment film 451 or the silicon substrate 450, no damage (steps) is formed on the surface of the stress adjustment film 451 or the silicon substrate 450, and it does not affect subsequent processing steps. Furthermore, the modified portion 452 can generate stress fluctuations in the X and Y directions by irradiating it with laser light 305 so that it forms an ellipse in each of the X and Y directions. Note that the area of ​​the stress adjustment film 451 or the silicon substrate 450 into which the laser light 305 is irradiated is removed by back grinding (BG), so it does not affect the manufactured chip (semiconductor product).

[0062] Figure 9 is an explanatory diagram showing an example of decomposing misalignment represented by a vector map into a correction model. The vector map 430 shown in Figure 9 is an example of misalignment on the substrate W, where the direction and magnitude of each vector are complex. Graphs 431 to 434 are examples of decomposing the misalignment represented by the vector map 430 into a correction model by analyzing it up to the third order. The correction model (k-value modeling) is partially represented by, for example, the following equations (1) to (3). In the correction calculation of misalignment, fitting is performed by order. The correction model is the same as that used in lithography.

[0063] 0th order, 1st order: DX=k1+k3×x+k5×y...(1) DY=k2+k4×y+k6×x...(2) 3rd order: DX=k1+k3×x+k5×y+k7×x ２ +k9×x×y +k11×y ２ +k13×x ３+ k15 × x ２ × y + k17 × x × y ２ + k19 × y ３ ···(3) DY = ···

[0064] The order of the correction model, k (coefficient), the orders of X and Y, the units, and the model are shown in FIG. 10. FIG. 10 is a diagram showing an example of the misalignment component of the correction model. Table 440 shown in FIG. 10 has items such as "order", "k (coefficient)", "X, Y order", "unit", and "Model". "Order" indicates the order of analysis of the correction model. "k (coefficient)" indicates the coefficient in the equation of the correction model. For example, the coefficient k = 1 is also expressed as the coefficient k1. "X, Y order" indicates the orders of X and Y corresponding to k (coefficient). "Unit" indicates the unit of the misalignment component. In Table 440, the power is expressed as notation such as "X^0", and μm is expressed as notation such as "um". "Model" indicates which component of the misalignment component each k (coefficient) represents. For example, the coefficient k3 indicates the magnification component (bowl-shaped distortion) in the X direction of the substrate W, and the coefficient k4 indicates the magnification component (bowl-shaped distortion) in the Y direction of the substrate W.

[0065] Returning to Figure 9, as shown in graphs 431 to 434, the vector map 430 is analyzed up to the third order, decomposing its components into coefficients k1 to k20. Here, since the vector map 430 corresponds to the measured displacement data set of the substrate W, components that correlate with the strain of the substrate W are extracted from the coefficients k1 to k20. For example, suppose that the eccentricity ratio components of coefficients k7 and k8 correlate with the strain of the substrate W, and the trapezoidal components of coefficients k9 and k10 do not correlate with the strain of the substrate W. At this time, when the control device 50 calculates the correction amount, it changes the knob items so that the coefficients k7 and k8 change, and calculates the correction amount data set. In other words, the control device 50 calculates the data items of the correction amount data set. The knob data items are, for example, the film type of the stress adjustment film, the strain direction (stress direction) for each first coordinate of the displacement data set, the laser irradiation map, the second coordinates where the laser is irradiated in the laser irradiation map, and the laser irradiation depth for each second coordinate. Furthermore, the film thickness of the stress-adjusting film is related to the laser penetration depth.

[0066] The control device 50 generates the IPD (variation value) after laser irradiation from the correction amount data set using a trained model in which parameters related to strain have been learned. In other words, the control device 50 generates the IPD that has changed due to laser irradiation from the measured displacement data set as the IPD (variation value). The IPD (variation value) is expressed as IPD_k* as a k-value model and can be expressed by the following equation (4). Herein, b represents the coefficient in equation (4), and k* represents a wildcard for the coefficient k.

[0067] IPD_k* = b × (insertion position and depth) ... (4)

[0068] The parameters of the trained model relate to the relationship between strain deformation when an energy beam is irradiated to each of the first coordinates, the relationship between the depth of energy beam irradiation and strain deformation, the relationship between the film type of the stress adjustment film 451 and the stress direction and strain deformation for each of the first coordinates, and the relationship between strain and pattern deviation. The trained model is a machine learning model. Various machine learning algorithms such as SVM (Support Vector Machine) and CNN (Convolutional Neural Network) can be used.

[0069] Next, the target data set for alignment misalignment is, for example, the data set in which the in-plane variation of the substrate W is within the target value, and can be represented by an overlay (OL). The target data set for alignment misalignment is, for example, the data set in which Mean(Ave) + 3σ(X,Y) is within the target value. The k-value modeling of the overlay is represented by OL_k*, and can be expressed by the following equation (5). Herein, a represents the coefficient in equation (5), and k* represents a wildcard for the coefficient k.

[0070] OL_k*=a×IPD_k*...(5)

[0071] From equations (4) and (5), the amount of improvement in the overlay (the amount of variation in the overlay) can be expressed by the following equation (6).

[0072] OL_k * Improvement Amount = a × b × (Driving Position and Depth) ... (6)

[0073] In other words, the OL_k* improvement amount in equation (6) is the amount by which the overlay is expected to be improved by laser irradiation with respect to the measured displacement data set. The control device 50 reflects the OL_k* improvement amount in the overlay of the displacement data set and generates a set of assumed data for alignment misalignment (pattern misalignment).

[0074] The control device 50 determines the correction amount data set based on the generated assumed data set and the target data set, if the misalignment (pattern misalignment) is within the target value. In other words, the control device 50 determines the correction amount data set that minimizes the overlay. If the misalignment is not within the target value, the control device 50 modifies the data items in the correction amount data set and returns to the process of generating the correction amount data set again.

[0075] Once the control device 50 determines the correction amount data set, it transmits the determined correction amount data set to the irradiation module 70 and controls it to irradiate the back surface of the substrate W with laser light 305. This makes it possible to correct misalignment (pattern misalignment) and distortion within the substrate W. In other words, in this embodiment, distortion, alignment, etc. of the substrate W can be corrected. In this embodiment, in order to prioritize the correction of pattern misalignment, overlay correction may be performed even if it worsens the distortion of the substrate W.

[0076] [Correction Processing Method] Next, the correction processing method according to this embodiment will be described. Figure 11 is a flowchart showing an example of the correction processing method in this embodiment.

[0077] In the correction processing method according to this embodiment, the control device 50 controls each module to transport the substrate W housed in the FOUP of the load port 31 to the TM10 via the LM30 and LLM40. The control device 50 controls the TM10 to invert the substrate W using an inversion mechanism (not shown) and transport it to the PM20. The substrate W is placed on the stage 21 of the PM20 in an inverted state. The control device 50 controls the PM20 to form a stress adjustment film 451 on the back surface of the substrate W (step S1). That is, the control device 50 controls the PM20 to form a stress adjustment film 451 on the strained substrate W.

[0078] The control device 50 controls each module to transport the substrate W from the stage 21 of the PM20 to the TM10 once the formation of the stress adjustment film in the PM20 is complete. The control device 50 also receives and acquires the film thickness value of the stress adjustment film 451 from the control unit 24 of the PM20. The film thickness value of the stress adjustment film 451 may be an estimated value based on the film formation process recipe in the PM20, or it may be a value measured by a measuring device (not shown). The control device 50 controls the TM10 to invert the substrate W using an inversion mechanism (not shown) and transport it to the measurement module 60. The substrate W is placed on the stage 61 of the measurement module 60.

[0079] The control device 50 controls the control unit 64 of the measurement module 60 to measure the displacement in the height direction and the displacement of the pattern in the longitudinal and transverse directions at multiple coordinates of the substrate W. The control device 50 controls the control unit 64 to generate a set of displacement data for each first coordinate of the substrate W from the measured displacement in the height direction and the displacement of the pattern in the longitudinal and transverse directions at multiple coordinates of the substrate W. In other words, the control device 50 controls the control unit 64 to measure the strain of the substrate W and generate a set of displacement data (step S2). The control device 50 receives and acquires the generated set of displacement data for each first coordinate from the control unit 64 of the measurement module 60. The control device 50 stores the acquired set of displacement data in the database of the storage unit.

[0080] The control device 50 calculates a correction amount based on the displacement data set obtained from the control unit 64, the target data set of misalignment stored in the memory unit, and the film thickness value of the stress adjustment film 451 obtained from the control unit 24 (step S3). For example, the control device 50 calculates a correction amount for each first coordinate of the substrate W based on the difference between the target data set and the displacement data set, and the film thickness value of the stress adjustment film 451. Here, the control device 50 may refer to the database in the memory unit and use the moving average value of the displacement data set as the displacement data set.

[0081] The control device 50 generates a set of correction amount data corresponding to the first correction amount for each coordinate calculated using a correction model based on k-value modeling (step S4). In other words, the control device 50 calculates each data item in the correction amount data set.

[0082] The control device 50 uses a trained model in which parameters related to strain have been learned to generate the IPD (variation value) after laser irradiation from the correction amount data set and calculate the OL_k* improvement amount. The control device 50 reflects the OL_k* improvement amount on the overlay of the displacement data set to generate a set of assumed alignment misalignment data. In other words, the control device 50 uses the trained model to generate a set of assumed alignment misalignment data from the generated correction amount data set (step S5).

[0083] The control device 50 determines whether the misalignment is within the target value based on the generated assumed data set and the target data set (step S6). If the control device 50 determines that the misalignment is not within the target value (step S6: No), it corrects the data items in the correction amount data set (step S7), returns to step S4, and generates the correction amount data set again. On the other hand, if the control device 50 determines that the misalignment is within the target value (step S6: Yes), it finalizes the correction amount data set.

[0084] In other words, in steps S3 to S7, the control device 50 calculates a correction amount based on the displacement data group and the film thickness value of the stress adjustment film 451, and generates a correction amount data group. That is, as a process for generating the correction amount data group, the control device 50 calculates a correction amount based on the displacement data group and the target data group for pattern deviation so that the pattern deviation is within the target value. Furthermore, as a process for generating the correction amount data group, the control device 50 uses a correction model that has been modeled by dividing it into orders to calculate the data items of the correction amount data group corresponding to the correction amount. Furthermore, the data items of the correction amount data group include the film type of the stress adjustment film 451, the stress direction for each first coordinate, the second coordinate, and the depth to which the energy beam is irradiated. Furthermore, in the process for generating the correction amount data group, the control device 50 uses a trained model in which parameters related to strain have been learned to generate an assumed data group for pattern deviation from the generated correction amount data group, and confirms the correction amount data group when the pattern deviation is within the target value based on the generated assumed data group and the target data group. Furthermore, the parameters of the trained model relate to the relationship between strain deformation when an energy beam is irradiated to each of the first coordinates, the relationship between the depth of energy beam irradiation and strain deformation, the relationship between the film type of the stress adjustment film 451 and the stress direction and strain deformation for each of the first coordinates, and the relationship between strain and pattern deviation.

[0085] The control device 50 controls each module to transport the substrate W from the stage 61 of the measurement module 60 to the TM10. The control device 50 controls the TM10 to invert the substrate W using an inversion mechanism (not shown) and transport it to the irradiation module 70. The substrate W is placed on the stage 71 of the irradiation module 70.

[0086] The control device 50 transmits the correction amount data group and the film thickness value of the stress adjustment film 451 to the control unit 74 of the irradiation module 70. Based on the correction amount data group and the film thickness value of the stress adjustment film 451, the control device 50 controls the irradiation module 70 to irradiate the back surface of the substrate W with laser light 305 (step S8). The stress adjustment film 451 deposited on the back surface of the substrate W is modified by the laser light 305. That is, based on the correction amount data group and the film thickness value of the stress adjustment film 451, the control device 50 controls the irradiation module 70 to change the stress and correct the strain, as well as correct the pattern misalignment, by irradiating the stress adjustment film 451 with an energy beam in the depth direction at each second coordinate and modifying it. In other words, as a process to correct the pattern misalignment, the control device 50 controls the irradiation module 70 to irradiate with an energy beam in the depth direction to modify a range that includes at least one of the stress adjustment film 451 and the substrate W.

[0087] The control device 50 controls each module to transport the substrate W from the stage 71 of the irradiation module 70 to the TM10 once the modification of the stress adjustment film 451 on the substrate W is complete. The control device 50 then causes each module to perform other processes on the substrate W. The control device 50 controls the TM10 to transport the substrate W, after the other processes have been completed, to the measurement module 60. The substrate W is placed on the stage 61 of the measurement module 60. The control device 50 controls the measurement module 60 to measure the height displacement at multiple coordinates of the substrate W. In other words, the control device 50 controls the measurement module 60 to measure the strain of the substrate W (step S9). The control device 50 stores the measured strain data (i.e., the displacement data group) in the database of the storage unit.

[0088] Subsequently, the control device 50 controls each module to accommodate the substrate W in the FOUP of the load port 31 via the LLM 40 and LM 30. The substrate W is processed in a process having alignment challenges, such as lithography or bonding, by another device. After the process having alignment challenges is completed, the substrate W is accommodated in the FOUP of the load port 31. The control device 50 controls each module to transport the substrate W from the FOUP of the load port 31 to the TM 10 via the LLM 40 and LM 30. The control device 50 controls the TM 10 to transport the substrate W to the measurement module 60. The substrate W is placed on the stage 61 of the measurement module 60. The control device 50 controls the measurement module 60 to measure the displacement in the height direction and the displacement in the longitudinal and lateral directions of the pattern at multiple coordinates of the substrate W. That is, the control device 50 controls the measurement module 60 to measure the alignment misalignment of the substrate W (step S10). The control device 50 stores the measured alignment misalignment data (i.e., displacement data) in the database of the storage unit. In this way, the substrate processing system 1 can correct pattern misalignment (alignment misalignment) and distortion of the substrate W.

[0089] [Modified Version] In the above embodiment, the measurement module 60 was arranged and connected to the short side of the TM10 facing the LLM40. However, the measurement module 60 may be connected to the LM30 as a standalone measuring device, and this embodiment will be described as a modified version. Note that the substrate processing system in the modified version is the same as in the above embodiment except for the measuring device and the number of irradiation modules 70 arranged, so the description of its overlapping configuration and operation will be omitted.

[0090] Figure 12 is a cross-sectional plan view showing an example of a substrate processing system in a modified form. As shown in Figure 12, the substrate processing system 2 comprises a TM10, four PM20s, an LM30, two LLM40s, and two irradiation modules 70. A measurement module 80, which is a standalone measuring device, is connected to the substrate processing system 2. Note that the substrate processing system 2 and the measurement module 80 are examples of correction processing devices.

[0091] The transport mechanism 11 of TM10 moves along a guide rail and transports the substrate between the PM20, LLM40, and irradiation module 70. The transport mechanism 11 only needs to be capable of transporting the substrate between the PM20, LLM40, and irradiation module 70, and is not limited to the configuration shown in Figure 12.

[0092] An aligner 32 is connected to one side of the LM30 along its shorter side. A measuring module 80, which can be connected to the LM30 as a standalone measuring device, is connected to the other side of the LM30 along its shorter side. In other words, the measuring module 80 can be easily removed from the LM30.

[0093] In the LM30, the transport mechanism 35 transports the substrate between the FOUP, aligner 32, LLM40, and measurement module 80, which are placed on each load port 31. The transport mechanism 35 only needs to be capable of transporting the substrate between the FOUP, aligner 32, LLM40, and measurement module 80, and is not limited to the configuration shown in Figure 12.

[0094] In the substrate processing system 2, the communication unit of the control device 50 communicates (connects) with the control unit 24 of the process module 20 and the control unit 74 of the irradiation module 70. The communication unit of the control device 50 also communicates (connects) with the control unit 84 of the measurement module (measuring device) 80 located outside the substrate processing system 2. The communication unit of the control device 50 may also be connected to an external storage device that stores the displacement data group of the measurement module 80 and receive the displacement data group. Alternatively, the communication unit of the control device 50 may be connected to a network to which the external storage device is connected (described later) and receive the displacement data group from the external storage device via the network.

[0095] The measurement module 80 is positioned on the short side of the LM 30 opposite the aligner 32 and connected to the LM 30. The measurement module 80 is an example of an external measurement device of the substrate processing system 2. The measurement module 80 has a measurement chamber and a cylindrical stage 81 (mounting platform) located inside. The measurement chamber of the measurement module 80 is an example of a second chamber that measures the height displacement and the pattern displacement in the longitudinal and transverse directions at multiple coordinates of the substrate. The stage 81 has a plurality of three thin rod-shaped lift pins 82 that can protrude from the top surface. Each lift pin 82 is arranged on the same circumference in a plan view and, by protruding from the top surface of the stage 81, supports and lifts the substrate placed on the stage 81, and by retracting into the stage 81, places the supported substrate on the stage 81. After the substrate is placed on the stage 81, the measurement module 80 is controlled to measure the height displacement and the pattern displacement in the longitudinal and transverse directions at multiple coordinates of the substrate. The measurement module 80 may also have a transport system that corresponds to itself and the LM30.

[0096] The measurement module 80 has a control unit 84. The control unit 84 controls each part of the measurement module 80. The control unit 84 includes a storage unit that stores basic operations for controlling the operation of the measurement module 80. The control unit 84 also controls the measurement module 80 to measure the displacement in the height direction and the displacement of the pattern in the longitudinal and transverse directions at multiple coordinates of the substrate. The control unit 84 generates a set of displacement data for each first coordinate of the substrate from the measured displacement in the height direction and the displacement of the pattern in the longitudinal and transverse directions at multiple coordinates of the substrate. The control unit 84 transmits the generated displacement data set to the control device 50. The control unit 84 may also store the displacement data set in an external storage device connected to the measurement module 80. The control unit 84 transmits the displacement data set to the external storage device for storage in order to send the displacement data set to the control device 50. The external storage device may be, for example, a server connected to a network such as a LAN (Local Area Network). In this case, the control unit 84 may send and receive various data such as the displacement data set to and from the external storage device via the network. Thus, the substrate processing system 2 and the measurement module 80 can correct pattern misalignment (alignment misalignment) and substrate W distortion, even if the measurement module 80 is an external measuring device, in the same manner as in the embodiment described above.

[0097] In the modified example, an example of a combination of the substrate processing system 2 and the measurement module 80 was described, but other combinations are also possible. For example, a device combining a transport system module such as TM10 and the irradiation module 70 may be combined with an external measurement device (e.g., the measurement module 80) and an external film deposition device (e.g., a standalone device equivalent to PM20).

[0098] In the above-described embodiment, the PM20 and the irradiation module 70 were made into different modules, but the invention is not limited to this. For example, a laser oscillator 303 and a focusing lens 304 may be provided inside the chamber 201 of the PM20, and the stress adjustment film 451 may be modified by laser light 305 inside the chamber 201. For example, a stress adjustment film 451 may be formed on the back surface of a substrate W on which strain and misalignment have been measured, while the laser light 305 is irradiated onto the formed stress adjustment film 451.

[0099] Specifically, the control device 50 calculates a correction amount based on the displacement data set and the planned film thickness value of the stress adjustment film 451, and generates a correction amount data set. The control device 50 also controls the process module 20 to form the stress adjustment film 451 on the substrate W. Furthermore, based on the correction amount data set, the control device 50 modifies the stress adjustment film 451 by irradiating it with an energy beam in the depth direction at each second coordinate, thereby changing the stress and correcting the strain, as well as correcting the pattern misalignment. Normally, the correction amount prioritizes the correction of pattern misalignment over the correction of strain. However, when used in a process that does not require pattern correction, the correction of strain may be prioritized over the correction of pattern misalignment.

[0100] Furthermore, in the above-described embodiment, the laser oscillator 303 and the focusing lens 304 are provided on the upper side of the chamber 301, but the invention is not limited to this. For example, in the stage 71, the back surface of the substrate W may be exposed on the bottom side of the chamber 301, and the stress adjustment film 451 on the back surface of the substrate W may be modified by irradiating it with laser light 305 from the laser oscillator 303 and the focusing lens 304 provided on the bottom side of the chamber 301.

[0101] Furthermore, in the above-described embodiment, a stress adjustment film 451 was formed on the back surface of the substrate W, then the displacement data group and correction amount data group were generated and the laser light 305 was irradiated, but this is not limited to this. For example, the displacement data group and correction amount data group of the substrate W may be generated first, then the stress adjustment film 451 may be formed on the back surface of the substrate W and the laser light 305 may be irradiated. In other words, the stress adjustment film 451 may be formed on the back surface of the substrate W while the laser light 305 is irradiated onto the formed stress adjustment film 451.

[0102] As described above, according to this embodiment, the correction processing apparatus (substrate processing system 1) includes a process module 20, a control device 50, a measurement module 60, and an irradiation module 70. The control device 50 controls the process module 20 to perform the step of forming a stress adjustment film 451 on a substrate W that has been strained. The control device 50 controls the measurement module 60 to perform the step of measuring the displacement in the height direction and the displacement of the pattern in the longitudinal and transverse directions at multiple coordinates of the substrate W to generate a group of displacement data for each first coordinate of the substrate W. The control device 50 calculates a correction amount based on the group of displacement data and the film thickness value of the stress adjustment film 451 and performs the step of generating a group of correction amount data. The control device 50 controls the irradiation module 70 to irradiate the stress adjustment film 451 with an energy beam (laser light 305) in the depth direction for each second coordinate to modify it, thereby changing the stress and correcting the strain, as well as correcting the pattern misalignment. As a result, the pattern misalignment and the strain of the substrate W can be corrected.

[0103] Furthermore, according to this embodiment, the correction processing device (substrate processing system 1) includes a process module 20, a control device 50, a measurement module 60, and an irradiation module 70. The control device 50 controls the measurement module 60 to measure the displacement in the height direction and the displacement of the pattern in the longitudinal and transverse directions at multiple coordinates of the substrate W where distortion has occurred, and executes a step of generating a group of displacement data for each first coordinate of the substrate W. The control device 50 calculates a correction amount based on the group of displacement data and the planned film thickness value of the stress adjustment film 451, and executes a step of generating a group of correction amount data. The control device 50 controls the process module 20 to execute a step of forming the stress adjustment film 451 on the substrate W. The control device 50 controls the irradiation module 70 to irradiate the stress adjustment film 451 with an energy beam (laser light 305) in the depth direction at each second coordinate based on the group of correction amount data, thereby changing the stress to correct the distortion and correct the pattern misalignment. As a result, the pattern misalignment and the distortion of the substrate W can be corrected.

[0104] Furthermore, according to this embodiment, the stress adjustment film 451 is a silicon-containing film. As a result, the direction and strength of the strain can be controlled by the film formation parameters.

[0105] Furthermore, according to this embodiment, the silicon-containing film is a silicon nitride film. As a result, a stress-adjusting film 451 in the tensile direction can be formed on the film-forming side.

[0106] Furthermore, according to this embodiment, the energy beam is a laser or a charged particle beam. As a result, the stress can be changed by modifying the stress adjustment film 451.

[0107] Furthermore, according to this embodiment, the wavelength of the laser is in the range from infrared to ultraviolet. As a result, various light sources can be used as the laser oscillator 303.

[0108] Furthermore, according to this embodiment, the process (step) for generating the correction amount data set calculates the correction amount based on the displacement data set and the target data set for pattern deviation, so that the pattern deviation is within the target value. As a result, the pattern deviation and the distortion of the substrate W can be corrected.

[0109] Furthermore, according to this embodiment, the process (step) for generating the correction amount data group calculates the data items of the correction amount data group corresponding to the correction amount using a correction model that has been modeled by dividing it into orders. As a result, it is possible to calculate the parameters for firing the energy beam into the substrate W.

[0110] Furthermore, according to this embodiment, the data items in the correction amount data group include the film type of the stress adjustment film 451, the stress direction for each first coordinate, the second coordinate, and the depth to which the energy beam is irradiated. As a result, the energy beam can be injected into the substrate W in a way that corrects pattern misalignment and distortion of the substrate W.

[0111] Furthermore, according to this embodiment, the process (step) for generating the correction amount data set involves using a trained model in which parameters related to distortion have been learned to generate an estimated data set of pattern deviation from the generated correction amount data set, and then determining the correction amount data set based on the generated estimated data set and the target data set, if the pattern deviation is within the target value. As a result, the correction amount for the pattern deviation and the distortion of the substrate W can be predicted.

[0112] Furthermore, according to this embodiment, the parameters are related to the relationship between strain deformation when an energy beam is irradiated to each first coordinate, the relationship between the depth of energy beam irradiation and strain deformation, the relationship between the film type of the stress adjustment film 451 and the stress direction for each first coordinate and strain deformation, and the relationship between strain and pattern misalignment. As a result, the amount of correction for pattern misalignment and substrate W strain can be predicted.

[0113] Furthermore, according to this embodiment, the first coordinate of the displacement data group and the second coordinate to which the energy beam is irradiated are the same coordinate. As a result, the energy beam can be irradiated to the first coordinate of the displacement data group.

[0114] Furthermore, according to this embodiment, the process (step) for correcting pattern misalignment involves irradiating an energy beam with a range that includes at least one of the stress adjustment film 451 and the substrate W in the depth direction to modify it. As a result, the correction range for both pattern misalignment and substrate W distortion can be widened.

[0115] Furthermore, according to this embodiment, the correction processing device (substrate processing system 1) includes a first chamber (chamber 201), a second chamber (measurement module 60), a data processing unit (control device 50), a third chamber (chamber 301), a plurality of control units (control units 24, 64, 74), and a communication unit (included in the control device 50). The first chamber forms a stress adjustment film 451 on the substrate W. The second chamber measures the displacement in the height direction and the displacement of the pattern in the longitudinal and transverse directions at a plurality of coordinates of the substrate W. The data processing unit generates a group of correction amount data for each second coordinate from a group of displacement data for each first coordinate of the substrate W. The third chamber irradiates the stress adjustment film 451 with an energy beam in the depth direction based on the group of correction amount data and the film thickness value of the stress adjustment film 451. The plurality of control units each include a plurality of storage units that store basic operations for controlling the operation of the first chamber, the second chamber, and the third chamber, respectively. The communication unit connects each of the multiple control units to the data processing unit. As a result, pattern misalignment and distortion of the substrate W can be corrected.

[0116] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0117] Furthermore, in the above-described embodiment, the stress of the substrate W was changed by irradiating the stress adjustment film 451 with laser light 305, but the invention is not limited to this. For example, a resist film may be formed on the stress adjustment film 451 on the back surface of the substrate W, and exposure and development may be performed using an exposure map based on a set of correction amount data to implant and ash the stress adjustment film 451, thereby changing the stress of the substrate W.

[0118] Furthermore, this disclosure can also be configured as follows: (1) A correction processing method comprising: forming a stress adjustment film on a substrate in which distortion has occurred; measuring the displacement in the height direction and the displacement of the pattern in the longitudinal and transverse directions at multiple coordinates of the substrate to generate a group of displacement data for each first coordinate of the substrate; calculating a correction amount based on the group of displacement data and the film thickness value of the stress adjustment film to generate a group of correction amount data; and modifying the stress adjustment film by irradiating it with an energy beam in the depth direction at each second coordinate based on the group of correction amount data and the film thickness value of the stress adjustment film, thereby changing the stress to correct the distortion and correct the pattern misalignment. (2) A correction processing method comprising: measuring the height displacement and the pattern's vertical and horizontal displacement at multiple coordinates of the substrate where distortion has occurred to generate a group of displacement data for each first coordinate of the substrate; calculating a correction amount based on the displacement data group and the planned film thickness of the stress adjustment film to generate a group of correction amount data; forming the stress adjustment film on the substrate; and modifying the stress adjustment film by irradiating it with an energy beam in the depth direction at each second coordinate based on the correction amount data, thereby changing the stress to correct the distortion and correct the pattern misalignment. (3) The correction processing method according to (1) or (2), wherein the stress adjustment film is a silicon-containing film. (4) The correction processing method according to (3), wherein the silicon-containing film is a silicon nitride film. (5) The correction processing method according to any one of (1) to (4), wherein the energy beam is a laser or a charged particle beam. (6) The correction processing method according to (5), wherein the wavelength of the laser is in the range of infrared to ultraviolet. (7) The correction processing method according to any one of (1) to (6) above, wherein the process for generating the correction amount data set is to calculate the correction amount based on the displacement data set and the target data set for the pattern deviation so that the pattern deviation is within the target value.(8) The correction processing method according to (7), wherein the process for generating the correction amount data group is to calculate the data items of the correction amount data group corresponding to the correction amount using a correction model modeled by dividing into order. (9) The correction processing method according to (8), wherein the data items of the correction amount data group include the film type of the stress adjustment film, the stress direction for each of the first coordinates, the second coordinates, and the depth to which the energy beam is irradiated. (10) The correction processing method according to (8) or (9), wherein the process for generating the correction amount data group is to generate an assumed data group of pattern deviation from the generated correction amount data group using a trained model in which parameters related to the strain have been learned, and to determine the correction amount data group when the pattern deviation is within the target value based on the generated assumed data group and the target data group. (11) The correction processing method according to (10), wherein the parameters are parameters relating to the relationship between strain deformation when the energy beam is irradiated for each of the first coordinates, the relationship between the depth to which the energy beam is irradiated and the strain deformation, the relationship between the film type of the stress adjustment film and the stress direction for each of the first coordinates and the strain deformation, and the relationship between the strain and the pattern misalignment. (12) The correction processing method according to any one of (1) to (11), wherein the first coordinate of the displacement data group and the second coordinate to which the energy beam is irradiated are the same coordinate. (13) The correction processing method according to any one of (1) to (12), wherein the processing for correcting the pattern misalignment is to irradiate and modify a range in the depth direction that includes at least one of the stress adjustment film and the substrate with the energy beam.(14) A correction processing device comprising: a first chamber for forming a stress adjustment film on a substrate; a second chamber for measuring displacement in the height direction and displacement in the longitudinal and transverse directions of a pattern at multiple coordinates of the substrate; a data processing unit for generating a set of correction amount data for each second coordinate from a set of displacement data for each first coordinate of the substrate; a third chamber for irradiating the stress adjustment film with an energy beam in the depth direction based on the set of correction amount data and the film thickness value of the stress adjustment film; a set of control units, each including a set of storage units for storing basic operations that control the operation of the first chamber, the second chamber, and the third chamber; and a communication unit for connecting each of the set of control units to the data processing unit.

[0119] 1,2 Substrate Processing System (Correction Processing Device) 10 Transfer Module 20 Process Module 24, 64, 74 Control Unit 30 Loader Module 40 Load Lock Module 50 Control Device 60, 80 Measurement Module 70 Irradiation Module 201, 301 Chamber 303 Laser Oscillator 304 Focusing Lens 305 Laser Light 450 Silicon Substrate 451 Stress Adjustment Film 452 Modification Unit W Substrate

Claims

1. A correction method comprising: forming a stress adjustment film on a substrate in which distortion has occurred; measuring the displacement in the height direction and the displacement of the pattern in the longitudinal and transverse directions at multiple coordinates of the substrate to generate a group of displacement data for each first coordinate of the substrate; calculating a correction amount based on the group of displacement data and the film thickness value of the stress adjustment film to generate a group of correction amount data; and modifying the stress adjustment film by irradiating it with an energy beam in the depth direction at each second coordinate based on the group of correction amount data and the film thickness value of the stress adjustment film, thereby changing the stress to correct the distortion and correct the pattern misalignment.

2. A correction processing method comprising: measuring the displacement in the height direction and the displacement of the pattern in the longitudinal and transverse directions at multiple coordinates of the substrate in which distortion has occurred, and generating a group of displacement data for each first coordinate of the substrate; calculating a correction amount based on the group of displacement data and the planned film thickness value of the stress adjustment film, and generating a group of correction amount data; forming the stress adjustment film on the substrate; and modifying the stress adjustment film by irradiating it with an energy beam in the depth direction at each second coordinate based on the group of correction amount data, thereby changing the stress to correct the distortion and correct the pattern misalignment.

3. The correction method according to claim 1 or 2, wherein the stress adjustment film is a silicon-containing film.

4. The correction processing method according to claim 3, wherein the silicon-containing film is a silicon nitride film.

5. The correction processing method according to claim 1 or 2, wherein the energy beam is a laser or a charged particle beam.

6. The correction processing method according to claim 5, wherein the wavelength of the laser is in the range of infrared to ultraviolet light.

7. The correction processing method according to claim 1 or 2, wherein the process for generating the correction amount data set is to calculate the correction amount based on the displacement data set and the target data set for the pattern deviation so that the pattern deviation is within the target value.

8. The correction processing method according to claim 7, wherein the process for generating the correction amount data group is to calculate the data items of the correction amount data group corresponding to the correction amount using a correction model that has been modeled by dividing it by order.

9. The correction processing method according to claim 8, wherein the data items of the correction amount data group include the film type of the stress adjustment film, the stress direction for each of the first coordinates, the second coordinate, and the depth to which the energy beam is irradiated.

10. The correction processing method according to claim 8, wherein the process for generating the correction amount data set involves generating an assumed data set of pattern deviation from the generated correction amount data set using a trained model in which parameters related to the distortion have been learned, and determining the correction amount data set when the pattern deviation is within the target value based on the generated assumed data set and the target data set.

11. The correction processing method according to claim 10, wherein the parameters relate to the relationship between strain deformation when the energy beam is irradiated for each of the first coordinates, the relationship between the depth to which the energy beam is irradiated and the strain deformation, the relationship between the film type of the stress adjustment film and the stress direction for each of the first coordinates and the strain deformation, and the relationship between the strain and the pattern deviation.

12. The correction processing method according to claim 1 or 2, wherein the first coordinate of the displacement data group and the second coordinate to which the energy beam is irradiated are the same coordinate.

13. The correction method according to claim 1 or 2, wherein the process for correcting the pattern misalignment involves irradiating a range in the depth direction that includes at least one of the stress adjustment film and the substrate with the energy beam to modify it.

14. A correction processing device comprising: a first chamber for forming a stress adjustment film on a substrate; a second chamber for measuring displacement in the height direction and displacement in the longitudinal and transverse directions of a pattern at multiple coordinates of the substrate; a data processing unit for generating a set of correction amount data for each of the second coordinates from a set of displacement data for each of the first coordinates of the substrate; a third chamber for irradiating the stress adjustment film with an energy beam in the depth direction based on the set of correction amount data and the film thickness value of the stress adjustment film; a set of control units, each including a set of storage units that store basic operations for controlling the operation of the first chamber, the second chamber, and the third chamber; and a communication unit that connects each of the set of control units to the data processing unit.

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