Upper assembly, substrate processing device, and top plate assembly

The upper assembly with actuators and coupling members addresses the challenge of detachment and attachment of the top plate and base member in substrate processing apparatuses, enhancing operational efficiency and maintenance by maintaining adhesion and thermal contact.

WO2026155027A1PCT designated stage Publication Date: 2026-07-23TOKYO ELECTRON LTD
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
TOKYO ELECTRON LTD
Filing Date
2026-01-06
Publication Date
2026-07-23

AI Technical Summary

Technical Problem

Existing substrate processing apparatuses face challenges in efficiently facilitating the detachment and attachment of the top plate and base member within the processing chamber, which affects the operational efficiency and maintenance of the apparatus.

Method used

An upper assembly is introduced, comprising a top plate, a base member, actuators, and coupling members with grooves and protrusions that allow for easy engagement and disengagement, enabling the top plate to be lifted and biased against the base member, thereby simplifying the detachment and attachment process.

Benefits of technology

The solution enhances the operational efficiency by maintaining direct or indirect adhesion between the top plate and base member, ensuring stable thermal contact and facilitating easy assembly and disassembly, thus improving maintenance and operational stability.

✦ Generated by Eureka AI based on patent content.

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Abstract

The disclosed upper assembly comprises: a top plate having an upper surface and configured to extend over a processing space inside a chamber of a substrate processing device; a base member disposed on the top plate; at least one actuator configured to lift the top plate and bias the top plate against the base member, the at least one actuator including a rod having a lower end part and a drive unit configured to move the rod up and down; and at least one coupler assembled to the top plate, the at least one coupler including an upper part protruding from the upper surface of the top plate, one of either the lower end part or the upper part having a groove, and the other of either the lower end part or the upper part having a raised part that is fitted into the groove so as to be insertable and removable in a horizontal direction.
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Description

Upper Assembly, Substrate Processing Apparatus, and Top Plate Assembly

[0001] Exemplary embodiments of the present disclosure relate to an upper assembly, a substrate processing apparatus, and a top plate assembly.

[0002] Patent Document 1 discloses a bush assembly for a plasma electrode plate. The plasma electrode plate has an insertion groove. The insertion groove has a screw in its center and an anti-rotation portion on its bottom surface. The bush assembly includes a bush and a fastening member. The bush is inserted into the insertion groove but does not rotate due to the anti-rotation portion. The fastening member is inserted into the outer portion of the bush and fastened to the insertion groove to fix the bush.

[0003] Korean Patent Publication No. 10-2128596

[0004] The present disclosure provides a technique for facilitating the detachment and attachment of a top plate and a base member in an upper assembly above a processing space in a chamber of a substrate processing apparatus.

[0005] In one exemplary embodiment, an upper assembly is provided. The upper assembly includes a top plate having an upper surface and configured to extend over a processing space in a chamber of a substrate processing apparatus, a base member disposed on the top plate, and at least one actuator configured to lift the top plate and bias the top plate against the base member, the at least one actuator including a rod having a lower end and a drive unit configured to move the rod up and down, and at least one coupling member assembled to the top plate, the at least one coupling member including an upper portion protruding from the upper surface of the top plate, wherein one of the lower end and the upper portion has a groove, and the other of the lower end and the upper portion has a protrusion that is horizontally insertable and removable into the groove.

[0006] According to one exemplary embodiment, a technique is provided for facilitating the detachment and attachment of a top plate and a base member in an upper assembly above a processing space in a chamber of a substrate processing apparatus.

[0007] This is a diagram illustrating an example configuration of a plasma processing system. This is a diagram illustrating an example configuration of a capacitively coupled plasma processing apparatus. This is a diagram showing an upper assembly according to one exemplary embodiment. This is an enlarged cross-sectional view showing an example of a coupling and the lower end of a rod. This is an enlarged perspective view showing an example of the lower end of a rod. This is an enlarged perspective view showing an example of a coupling. This is a plan view showing an example of a top plate 51. Figures 8(a), 8(b), and 8(c) illustrate an example of the operation of engaging the rod of the base member with the coupling of the top plate. Figures 9(a) and 9(b) illustrate an example of the operation of the actuator biasing the top plate relative to the base member.

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings. In each drawing, the same or corresponding parts will be denoted by the same reference numerals.

[0009] Figure 1 is a diagram illustrating an example configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20, which will be described later, and the gas outlet is connected to an exhaust system 40, which will be described later. The substrate support unit 11 is located in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR plasma (Electron-Cyclotron-Resonance Plasma), helicon wave excited plasma (HWP), or surface wave plasma (SWP), etc. Various types of plasma generation units, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units, may also be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described herein. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or it may be obtained via a medium when needed. The obtained program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The memory unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0012] The following describes an example configuration of a capacitively coupled plasma processing apparatus as an example of a plasma processing apparatus 1. Figure 2 is a diagram illustrating an example configuration of a capacitively coupled plasma processing apparatus.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is located inside the plasma processing chamber 10. The shower head 13 is located above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side walls 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 may be electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is placed on the central region 111a of the main body portion 111, and the ring assembly 112 is placed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also called the substrate support surface for supporting the substrate W, and the annular region 111b is also called the ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is placed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b placed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may also have an annular region 111b. In this case, the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode, which will be coupled to the RF power supply 31 and / or DC power supply 32 described later, may be placed within the ceramic member 1111a. In this case, at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or DC signal, described later, is supplied to at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and at least one RF / DC electrode may function as multiple lower electrodes. Also, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one covering ring. The edge rings are formed of a conductive or insulating material, and the covering rings are formed of an insulating material.

[0017] The substrate support section 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed within the base 1110, and one or more heaters are arranged within the ceramic member 1111a of the electrostatic chuck 1111. The substrate support section 11 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0018] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through the plurality of gas inlet ports 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0019] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas to the shower head 13 from a corresponding gas source 21 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of at least one processing gas.

[0020] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This causes plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power supply 31 can function as at least part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ionic components in the formed plasma can be drawn into the substrate W.

[0021] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. One or more generated source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generation unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. One or more generated bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] Furthermore, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generation unit 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0024] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generation unit for generating a sequence of voltage pulses from the DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Thus, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses may have positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generation units 32a and 32b may be provided in addition to the RF power supply 31, and the first DC generation unit 32a may be provided in place of the second RF generation unit 31b.

[0025] The exhaust system 40 may be connected to, for example, a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0026] The following refers to Figure 3. Figure 3 shows an upper assembly according to one exemplary embodiment. The upper assembly 50 shown in Figure 3 can be used in a substrate processing apparatus such as the plasma processing apparatus 1. In the embodiment shown in Figure 3, the showerhead 13 including the upper electrode 14 is electrically insulated from the housing of the plasma processing chamber 10, which includes the member 59 described later.

[0027] As shown in Figure 3, the upper assembly 50 may be placed in the processing space 10s in the plasma processing apparatus 1. The upper assembly 50 includes a top plate 51, a base member 52, at least one actuator 54, and at least one coupling 55. The top plate 51 is placed in the processing space 10s in the vertical direction, and the base member 52 is placed on the top plate 51. In the following description, the direction in which the top plate 51 and the base member 52 are placed (vertical direction) may be referred to as the Z-axis direction. One horizontal direction perpendicular to the Z-axis direction may be referred to as the X-axis direction, and one horizontal direction perpendicular to both the Z-axis direction and the X-axis direction may be referred to as the Y-axis direction.

[0028] The top plate 51 has an upper surface 51a and is configured to extend in the X-axis and Y-axis directions over the processing space 10s within the plasma processing chamber 10 of the plasma processing apparatus 1. The top plate 51 is positioned on the processing space 10s. The top plate 51 defines the processing space 10s from above. The top plate 51 may have a substantially disc shape. The base member 52 has a lower surface 52a and is positioned on the top plate 51. The upper surface 51a of the top plate 51 faces the lower surface 52a of the base member 52 in the Z-axis direction. The base member 52 may have a substantially disc shape. The base member 52 may include a refrigerant flow path 52f extending therein. A chiller unit 70 is connected to the refrigerant flow path 52f. The refrigerant flow path 52f receives refrigerant supplied from the chiller unit 70. The refrigerant flows through the refrigerant flow path 52f and is returned to the chiller unit 70. The temperature of the base member 52 is regulated by the refrigerant flowing through the refrigerant flow path. Furthermore, the temperature of the top plate 51 is adjusted by heat transfer between the top plate 51 and the base member 52. In the example of Figure 3, the gas diffusion chamber 13b is defined between the top plate 51 and the base member 52 by the top plate 51 and the base member 52. The gas diffusion chamber 13b may also be formed within the base member 52. In the example of Figure 3, the refrigerant flow path 52f is located above the gas diffusion chamber 13b in the Z-axis direction, but the refrigerant flow path 52f may be located below the gas diffusion chamber 13b in the Z-axis direction. In this case, the refrigerant flow path 52f may be located between adjacent gas inlets 13c in the X-axis direction.

[0029] The upper assembly 50 may further include a heat transfer sheet 53. The heat transfer sheet 53 is positioned between the upper surface 51a of the top plate 51 and the lower surface 52a of the base member 52, and is sandwiched between the top plate 51 and the base member 52. The heat transfer sheet 53 enables efficient heat transfer between the top plate 51 and the base member 52. If the upper assembly 50 does not include the heat transfer sheet 53, the upper surface 51a of the top plate 51 and the lower surface 52a of the base member 52 may be in contact with each other. Also, the heat transfer sheet 53 does not have to be positioned inside the gas diffusion chamber 13b, and may define the gas diffusion chamber 13b together with the top plate 51 and the base member 52.

[0030] In one embodiment, the top plate 51 and the base member 52 may constitute the upper electrode 14 in a capacitively coupled plasma processing apparatus 1. The upper electrode 14 may further include a heat transfer sheet 53 together with the top plate 51 and the base member 52. In this case, the top plate 51, the base member 52, and the heat transfer sheet 53 are formed from conductive materials. The top plate 51 is formed from a conductive material such as silicon or a metal (e.g., aluminum). The base member 52 is formed from a conductive material such as a metal (e.g., aluminum). The heat transfer sheet 53 may be formed from a conductive material. The heat transfer sheet 53 may be elastic. The heat transfer sheet 53 is formed from, for example, carbon or a carbon-containing material.

[0031] In one embodiment, the upper assembly 50 may further include members 59, 56, 57, and 58. Member 59 is formed from a conductive material such as metal (e.g., aluminum). Member 59 extends over the top of the side wall of the plasma processing chamber 10 and is electrically grounded. Member 59 may have a substantially cylindrical shape, and its lower end may form a reduced diameter portion. The reduced diameter portion has an inner diameter smaller than the inner diameter of the portion of member 59 above it.

[0032] Member 58 is positioned on member 59. Member 58 is made of a conductive material such as metal (e.g., aluminum). Member 58 has a substantially disc shape and is electrically grounded. Member 59 and member 58 define a space 50s.

[0033] Member 56 is formed from an insulating material such as quartz or alumina ceramic. Member 56 may have a substantially ring shape. The inner edge of member 56 is positioned below the peripheral edge of the base member 52 such that its upper surface faces the lower surface of the peripheral edge of the base member 52. The outer edge of member 56 is supported on the reduced diameter portion of member 59.

[0034] Member 57 may be formed from an insulating material such as quartz or alumina ceramic, or a conductive material such as metal (e.g., stainless steel). Member 57 may have a substantially ring shape. The inner edge of member 57 is positioned on the periphery of the base member 52 such that its lower surface faces the upper surface of the periphery of the base member 52. The outer edge of member 57 is positioned on the outer edge of member 56. Members 56 and 57 sandwich the periphery of the base member 52 between them.

[0035] In one embodiment, the upper assembly 50 may further include a clamp 60. The clamp 60 clamps the periphery of the top plate 51 and the periphery of the base member 52 between its upper and lower parts. The clamp 60 includes a member 61 as its lower part. The clamp 60 may further include members 56 and 57 as its upper parts. Member 61 may have a substantially ring shape. Member 61 may include an inner edge and an outer edge. The inner edge of member 61 is positioned below the periphery of the top plate 51 such that its upper surface faces the lower surface of the periphery of the top plate 51. The outer edge of member 61 is positioned below the upper part of the clamp 60 (for example, members 56 and 57). The clamp 60 may further include a plurality of screws 62, such as bolts, and a plurality of springs 63. Multiple screws 62 are screwed into the upper part of the clamp 60 (for example, member 57), and their heads and multiple springs 63 bias member 61 against the upper part of the clamp 60 (for example, members 56 and 57). Note that the upper assembly 50 does not necessarily include members 57 and 61-63, and the clamp 60 does not necessarily hold the outer circumference of the upper electrode 14.

[0036] At least one actuator 54 is configured to lift the top plate 51 and bias the top plate 51 relative to the base member 52. In the upper assembly 50 of the embodiment shown in Figure 3, the at least one actuator 54 includes a plurality of actuators 54. The plurality of actuators 54 are configured to bias a plurality of portions of the top plate 51 in plane relative to the base member 52. The plurality of actuators 54 can be individually controlled by the control unit 2.

[0037] The multiple actuators 54 may be arranged on at least one circle around the central axis AX of the top plate 51. That is, the multiple actuators 54 may be connected to multiple parts of the top plate 51 on at least one circle around the central axis AX, and these multiple parts may be configured to bias the base member 52.

[0038] Each of the multiple actuators 54 may include a rod 541 having a lower end, and a drive unit 542 configured to move the rod 541 up and down. The rod 541 extends upward from its lower end. The lower end of the rod 541 can be detachably locked to the top plate 51.

[0039] At least one connector 55 is assembled to the top plate 51. The at least one connector 55 and the top plate 51 may constitute a top plate assembly. The top plate assembly may be biased against another member, the base member 52. In one example upper assembly 50, at least one connector 55 includes a plurality of connectors 55. The plurality of connectors 55 are arranged to correspond to a plurality of actuators 54. That is, the plurality of connectors 55 may be arranged on at least one circle around the central axis AX of the top plate 51. The lower end of the rod 541 of each actuator 54 can be detachably locked to a corresponding connector 55 fixed to the top plate 51. The drive unit 542 is configured to move the rod 541 up and down. The drive unit 542 may be located inside the base member 52 or located on the base member 52.

[0040] Each of the multiple actuators 54 may be an air cylinder. In this case, the rod 541 is a cylinder rod, and the drive unit 542 is a cylinder head. In this case, multiple air supply units 54s may be connected to the cylinder heads of the multiple actuators 54 via corresponding air lines. Each of the multiple actuators 54 of the upper assembly 50 may be a hydraulic cylinder or any other actuator, as long as it can bias the top plate 51 against the base member 52.

[0041] According to the upper assembly 50 described above, the top plate 51 is biased with respect to the base member 52 by a plurality of actuators 54. Therefore, the generation or expansion of the gap between the top plate 51 and the base member 52 is suppressed. Thus, the direct or indirect adhesion between the top plate 51 and the base member 52 via the heat transfer sheet 53 is maintained. Also, the direct or indirect thermal adhesion between the top plate 51 and the base member 52 via the heat transfer sheet 53 is maintained.

[0042] In one embodiment, the plasma processing apparatus 1 including the upper assembly 50 may include at least one temperature sensor 74 configured to measure the temperature distribution of the top plate 51. This temperature distribution is the temperature distribution in the in-plane direction of the top plate 51. In the example of FIG. 3, the plasma processing apparatus 1 includes a plurality of temperature sensors 74 configured to measure the temperature distribution of the top plate 51.

[0043] The plurality of temperature sensors 74 may be configured to measure the temperature of the top plate 51 at a plurality of portions of the top plate �1 biased by the plurality of actuators 54, that is, at portions in the vicinity of each of the plurality of portions of the top plate 51 to which the plurality of actuators 54 are connected. In the example of FIG. 3, the plurality of temperature sensors 74 protrude in the Z-axis direction from the lower surface 52a of the base member 52 toward the top plate 51. A plurality of accommodation grooves for accommodating the plurality of temperature sensors 74 are provided on the upper surface 51a of the top plate 51, and the plurality of temperature sensors 74 may be accommodated in the plurality of accommodation grooves, for example, by penetrating the heat transfer sheet.

[0044] The control unit 2 may be configured to control the plurality of actuators 54 according to the measured temperature distribution of the top plate 51. The control unit 2 may control the plurality of actuators <54 so as to bring the temperature distribution of the top plate 51 closer to the specified temperature distribution according to the measured temperature distribution of the top plate 51 and the specified temperature distribution for the top plate 51. The specified temperature distribution may be a uniform temperature distribution. Thereby, the temperature of the top plate 51 can be adjusted to an appropriate temperature.

[0045] Refer to Figure 4 below. Figure 4 is an enlarged cross-sectional view showing an example of a connector and the lower end of a rod. Figure 4 shows an example of the lower end 543 of the rod 541 of each of the plurality of connectors 55 (hereinafter sometimes simply referred to as connector 55) and each of the plurality of actuators 54 (hereinafter sometimes simply referred to as actuator 54). As shown in Figure 4, the connector 55 includes an upper part 551 that protrudes from the upper surface 51a of the top plate 51.

[0046] One of the lower end 543 and the upper part 551 of the rod 541 has a groove, and the other of the lower end 543 and the upper part 551 has a projection that is fitted horizontally into the groove so as to be removable. In the illustrated example upper assembly 50, the lower end 543 has a projection and the upper part 551 has a groove 551a. The lower end 543 may include a flange (first flange) 544 as the projection. In the upper assembly 50, for example, the flange 544 is inserted into the groove 551a to engage the rod 541 and the upper part 551. In other words, the coupling 55 is hooked onto the lower end 543 of the rod 541 by the flange 544 being housed in the groove 551a. Also in the upper assembly 50, for example, the upper part 551 of the coupling 55 is separated from the rod 541 by the flange 544 being removed from the groove 551a.

[0047] In this upper assembly 50, the protrusion is accommodated in the groove and the rod 541 and the upper part 551 can be engaged simply by moving the top plate 51 horizontally relative to the base member 52. In this state, when the top plate 51 is moved upward by the actuator 54, the top plate 51 can be biased relative to the base member 52. Furthermore, by moving the top plate 51 in the opposite direction to the insertion direction of the protrusion in the groove, the upper part 551 of the connector 55 can be easily separated from the rod 541. Therefore, the top plate 51 and the base member 52 can be easily attached to and detached.

[0048] Refer to FIG. 5 below. FIG. 5 is a perspective view showing an enlarged example of the lower end portion of the rod. In FIG. 5, the lower end portion 543 of the rod 541 is shown. In one embodiment, as shown in FIG. 5, the rod 541 has a cylindrical shape centered on the center line A2. The flange 544 protrudes radially in the rod 541. The lower end portion 543 has a disk shape centered on the center line A2, and the edge of the disk shape may be the flange 544. In one embodiment, the rod 541 may further include a rod main body portion 545 and a reduced-diameter portion 546 disposed between the rod main body portion 545 and the lower end portion 543. The center lines of the rod main body portion 545, the reduced-diameter portion 546, and the lower end portion 543 may each be the center line A2. Also, the diameter of the outer edge of the flange 544 may be larger than the diameters of the outer edges of the rod main body portion 545 and the reduced-diameter portion 546, respectively. Also, the diameter of the outer edge of the rod main body portion 545 may be larger than the diameter of the outer edge of the reduced-diameter portion 546.

[0049] FIG. 6 is a perspective view showing an enlarged example of a coupling. In the coupling 55 of one embodiment, the upper portion 551 includes an upper wall 551b as shown in FIG. 6. The upper wall 551b has a substantially horseshoe shape. The upper wall 551b may have an arc shape or a U shape when viewed in the Z-axis direction. The upper wall 551b extends horizontally on the groove 551a so as to define an arc-shaped groove 551a capable of accommodating a part of the flange 544 of the rod 541.

[0050] FIG. 7 is a plan view showing an example of the top plate. As described above, the plurality of couplings 55 may be arranged on at least one circle so as to correspond to the plurality of actuators 54. For example, as shown in FIG. 7, the plurality of couplings 55 may be arranged on two circles Ca and Cb around the central axis AX. The two circles Ca and Cb are concentric circles. Note that the plurality of couplings 55 of the upper assembly 50 may be arranged on three or more concentric circles around the central axis AX. The plurality of couplings 55 on each concentric circle may be arranged at equal intervals.

[0051] The grooves 551a of the upper part 551 of each of the multiple connectors 55 may open in a horizontal direction. For example, the groove 551a opens in a direction opposite to the circumferential direction around the central axis AX, which is the horizontal direction in which the flange 544 is inserted into the groove 551a. Here, the circumferential direction around the central axis AX is, for example, the direction in which the top plate 51 is rotated around the central axis AX when combining the base member 52 and the top plate 51. With this, for example, by rotating the top plate 51 along the circumferential direction around the central axis AX while the base member 52 and the top plate 51 are close together, the flange 544 can be inserted into the groove 551a which opens in a direction opposite to the circumferential direction. As a result, the rod 541 and the upper part 551 can be easily engaged with each other.

[0052] As shown in Figure 4, the top plate 51 may include at least one recess 51b that is open on the upper surface 51a of the top plate 51. The top plate 51 may include a plurality of recesses 51b, rather than at least one recess 51b. Each of the plurality of connectors 55 may further include a main body portion 552 disposed or fitted into each of the plurality of recesses 51b, a flange (second flange) 553 connected to the main body portion 552 and projecting upward from the upper surface 51a of the top plate 51, and a reduced diameter portion 554 disposed between the main body portion 552 and the flange 553. As shown in Figure 6, the main body portion 552 has a cylindrical shape centered on the center line A2. The flange 553 protrudes radially from the main body portion 552. The center line of the main body portion 552, the center line of the reduced diameter portion 554, and the center line of the flange 553 may coincide at the center line A2. The outer diameter of the main body portion 552 may be larger than the outer diameters of the flange 553 and the reduced-diameter portion 554, respectively. Also, the outer diameter of the flange 553 may be larger than the outer diameter of the reduced-diameter portion 554.

[0053] The upper part 551 may further include a lower wall 551c. The lower wall 551c has a substantially horseshoe shape. When viewed from the Z-axis direction, the lower wall 551c may have an arc shape or a U-shape. The lower wall 551c extends horizontally below the groove 551a to define the groove 551a. Like the groove 551a, the lower wall 551c opens in the opposite direction to the circumferential direction around the central axis AX, which is the horizontal direction in which the flange 544 is inserted into the groove 551a. The radius of the inner edge of the lower wall 551c may change in steps in the Z-axis direction. When viewed from the side where the lower wall 551c opens, the inner surface of the lower wall 551c has a stepped shape, and the opening width may narrow in two steps as it approaches the main body 552. The lower wall 551c is sandwiched between the flange 553 of the connector 55 and the main body 552. As shown in Figure 4, the lower wall 551c may include a portion into which the flange 553 is inserted and a portion into which the reduced diameter portion 554 is inserted.

[0054] The flange 544 at the lower end 543 of the rod 541 is inserted into the groove 551a between the flange 553 of the connector 55 and the upper wall 551b. In this case, as shown in Figure 4, the upper surface of the flange 544 may be in contact with the lower surface of the upper wall 551b. The groove 551a includes an upper groove 551d into which the flange 544 is inserted, and a lower groove 551e into which the flange 553 is inserted. The upper groove 551d is, for example, a groove defined by the portion of the upper part 551 that connects the upper wall 551b and the lower wall 551c. The lower groove 551e is, for example, a groove defined by the portion of the lower wall 551c into which the flange 553 is inserted.

[0055] The upper groove 551d and the lower groove 551e, like the groove 551a, open in the opposite direction to the circumferential direction around the central axis AX, which is the horizontal direction in which the flange 544 is inserted into the groove 551a. The radius and opening width of the upper groove 551d may differ from those of the lower groove 551e. For example, the radius and opening width of the upper groove 551d may be larger than those of the lower groove 551e. In this case, flanges 544 of various diameters can be accommodated in the upper groove 551d, regardless of the diameter of the flange 553.

[0056] As shown in Figure 4, the radius of the upper wall 551b of the connector 55 may be smaller than the radius of the rod body 545 and greater than or equal to the radius of the reduced diameter portion 546. The inner surface of the upper wall 551b may be located within the space between the rod body 545 and the flange 544. In this case, the reduced diameter portion 546 of the rod 541 may be inserted into the space defined by the inner surface of the upper wall 551b. In this case, the area in which the flange 544 of the rod 541 contacts the upper wall 551b of the connector 55 becomes larger, and the rod 541 and the connector 55 are more securely locked together.

[0057] Furthermore, in one embodiment of the connector 55, the upper part 551 may be detachably attached to the main body 552. For example, the upper part 551 can be fixed to the main body 552 by inserting the lower inner edge of the lower wall 551c into the space between the flange 553 and the main body 552, and clamping the lower inner edge of the lower wall 551c between the flange 553 and the main body 552. Alternatively, the upper part 551 can be removed from the main body 552 by removing the lower inner edge of the lower wall 551c from the space between the flange 553 and the main body 552.

[0058] Next, with reference to Figures 8(a) to 8(c), an example of the operation of engaging the rod 541 of the base member 52 with the connector 55 of the top plate 51 will be described. First, in the state shown in Figure 8(a), the lower end 543 of the rod 541 is located above the groove 551a of the upper part 551. The top plate 51 is brought closer to the base member 52, as indicated by the arrow in Figure 8(a). The top plate 51 is brought closer to the base member 52 so that the position of the lower end 543 of the rod 541 in the Z-axis direction coincides with the position of the groove 551a of the upper part 551 in the Z-axis direction (see Figure 8(b)).

[0059] Next, the top plate 51 is moved horizontally relative to the base member 52, as indicated by the arrow in Figure 8(b). This causes the flange 544 to be inserted into the groove 551a, as shown in Figure 8(c). For example, as described above, the flange 544 may be inserted into the groove 551a, which opens in the opposite direction to the circumferential direction, by rotating the top plate 51 relative to the base member 52 along the circumferential direction around the central axis AX. As shown in Figure 8(c), for example, the flange 544 may be inserted into the groove 551a until the center line of the rod 541 and the center line of the connector 55 coincide with each other. In this way, by housing the flange 544 in the groove 551a defined by the substantially horseshoe-shaped upper wall 551b, the connector 55 can be easily engaged or hooked with the rod 541. This allows the actuator 54 to stably bias the top plate 51 relative to the base member 52.

[0060] Next, with reference to Figures 9(a) and 9(b), an example of the operation in which the actuator 54 biases the top plate 51 relative to the base member 52 after the rod 541 of the base member 52 and the coupling 55 of the top plate 51 are engaged with each other will be described. Note that the heat transfer sheet 53 is not shown in Figures 9(a) and 9(b). As shown in Figure 9(a), if the actuator 54 is an air cylinder, the actuator 54 may further include a bellows 547 and a piston 548. The bellows 547 may be a member that expands and contracts in accordance with the up and down movement of the rod 541. The bellows 547 prevents foreign matter from adhering to the rod 541 from the outside. The piston 548 is a member that moves up and down in the Z-axis direction by compressed air supplied from the drive unit 542, which is a cylinder head.

[0061] The actuator 54 operates, for example, as follows. As shown in Figure 9(a), the actuator 54 discharges compressed air from the drive unit 542, for example, to pull up the piston 548 and the rod 541. In this state, the top plate 51 is biased against the base member 52, and direct or indirect contact between the top plate 51 and the base member 52 is ensured via the heat transfer sheet 53. Also, as shown in Figure 9(b), the actuator 54 supplies compressed air from the drive unit 542, for example, to apply pressure to the piston 548, thereby pulling down the rod 541. In this state, a gap may be created between the upper surface 51a of the top plate 51 and the lower surface 52a of the base member 52. In this state, the top plate 51 may be attached to or detached from the base member 52.

[0062] Although various exemplary embodiments have been described above, the invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and modifications may be made. Furthermore, it is possible to combine elements from different embodiments to form other embodiments.

[0063] For example, in the modified upper assembly, the lower end 543 may have a groove, and the upper part 551 may have a protrusion. The lower end 543 of the rod 541 may have a groove similar to the groove 551a, and the upper part 551 may include a flange protruding from the upper surface 51a of the top plate 51. In this case, the flange of the connector 55 is inserted into the groove of the lower end 543 of the rod 541, thereby engaging or hooking the connector 55 onto the rod 541. Also, at least one actuator 54 may consist of one actuator 54, and at least one connector 55 may consist of one connector 55. In this case, the actuator 54 may be connected to the center of the top plate 51, and the connector 55 may be positioned in the center of the top plate 51. In this case, the actuator 54 may be configured to bias the center of the top plate 51 relative to the base member 52.

[0064] Herein, various exemplary embodiments included in this disclosure are described in [E1] to [E13] below.

[0065] [E1] An upper assembly comprising: a top plate having an upper surface and configured to extend over the processing space within the chamber of a substrate processing apparatus; a base member disposed on the top plate; at least one actuator configured to lift the top plate and bias the top plate relative to the base member, the actuator comprising a rod having a lower end and a drive unit configured to move the rod up and down; and at least one coupling assembled to the top plate, the coupling comprising an upper part protruding from the upper surface of the top plate, the lower end and the upper part having a groove, and the other of the lower end and the upper part having a protrusion that is horizontally insertable and removable into the groove.

[0066] [E2] The upper assembly according to [E1], wherein the lower end includes a first flange projecting radially from the rod as the protrusion, and the upper part is an upper wall having a substantially horseshoe shape, the upper wall extending over the groove to define an arc-shaped groove capable of accommodating a portion of the first flange.

[0067] [E3] The upper assembly according to [E2], wherein the at least one actuator comprises a plurality of actuators, and the at least one coupling comprises a plurality of couplings.

[0068] [E4] The upper assembly according to [E3], wherein the plurality of actuators are arranged on at least one circle about the central axis of the top plate, and the plurality of couplings are arranged on the at least one circle to correspond to the plurality of actuators.

[0069] [E5] The upper assembly according to [E4], wherein the grooves on the upper part of each of the plurality of connectors open in the opposite direction to the circumferential direction about the central axis which is the horizontal direction into which the first flange is inserted.

[0070] [E6] The top plate includes at least one recess opening in the upper surface of the top plate; the upper part is a lower wall having a substantially horseshoe shape, the lower wall extending below the groove to define the groove; the at least one connector further includes a main body assembled in the at least one recess, and a second flange connected to the main body and projecting upward from the upper surface of the top plate; the lower wall of the upper part is sandwiched between the second flange of the at least one connector and the main body; the first flange of the lower end of the rod is inserted into the groove between the second flange and the upper wall; the upper assembly according to any one of [E2] to [E5].

[0071] [E7] The upper assembly according to [E6], wherein the groove includes an upper part into which the first flange is inserted and a lower part into which the second flange is inserted, and the radius of the upper part of the groove and the width of the opening are different from the radius of the lower part of the groove and the width of the opening, respectively.

[0072] [E8] The upper assembly according to [E7], wherein the radius of the upper part of the groove and the width of the opening are each larger than the radius of the lower part of the groove and the width of the opening.

[0073] [E9] The upper assembly according to any one of [E2] to [E8], wherein the rod includes a rod body and a reduced diameter portion disposed between the rod body and the lower end, the radius of the upper wall of the at least one connector is smaller than the radius of the rod body and greater than or equal to the radius of the reduced diameter portion, and the inner edge of the upper wall of the at least one connector is located in the space between the rod body and the first flange.

[0074] [E10] The upper assembly according to any one of [E1] to [E9], further comprising a heat transfer sheet disposed between the top plate and the base member.

[0075] [E11] A substrate processing apparatus comprising: a chamber; an upper assembly disposed on the processing space within the chamber, wherein the upper assembly comprises: a top plate having an upper surface and configured to extend on the processing space within the chamber of the substrate processing apparatus; a base member disposed on the top plate; at least one actuator configured to lift the top plate and bias the top plate relative to the base member, the actuator comprising: a rod having a lower end; and a drive unit configured to move the rod up and down; and at least one coupling assembled to the top plate, comprising: an upper part protruding from the upper surface of the top plate, the lower end and the upper part having a groove, and the other of the lower end and the upper part having a protrusion that is horizontally insertable and removable into the groove;

[0076] [E12] The substrate processing apparatus according to [E11], further comprising: at least one temperature sensor configured to measure the temperature of the top plate; a control unit, wherein the control unit is configured to control at least one actuator according to the temperature of the top plate measured by the at least one temperature sensor.

[0077] [E13] A top plate assembly comprising: a top plate configured to extend over the processing space within the chamber of a substrate processing apparatus; and at least one connector assembled to the top plate, wherein the at least one connector includes an upper portion protruding from the upper surface of the top plate, the upper portion including a groove capable of receiving a protrusion of another member into which a horizontally insertable and removable portion is fitted, or a protrusion into a groove of another member into which a horizontally insertable and removable portion is fitted.

[0078] 1...Plasma processing apparatus, 2...Control unit, 10...Plasma processing chamber (chamber), 50...Upper assembly, 51...Top plate, 51a...Upper surface, 52...Base member, 54...Actuator, 55...Coupling device, 541...Rod, 542...Drive unit, 543...Lower end, 551...Upper part, 551a...Groove.

Claims

1. An upper assembly comprising: a top plate having an upper surface and configured to extend over the processing space within the chamber of a substrate processing apparatus; a base member disposed on the top plate; at least one actuator configured to lift the top plate and bias the top plate relative to the base member, the actuator comprising a rod having a lower end and a drive unit configured to move the rod up and down; and at least one coupling assembled to the top plate, the coupling comprising an upper part protruding from the upper surface of the top plate, the lower end and the upper part having a groove, and the other of the lower end and the upper part having a protrusion that is horizontally insertable and removable into the groove.

2. The upper assembly according to claim 1, wherein the lower end includes a first flange projecting radially from the rod as the protrusion, and the upper part is an upper wall having a substantially horseshoe shape, the upper wall extending over the groove to define an arc-shaped groove capable of accommodating a portion of the first flange.

3. The upper assembly according to claim 2, wherein the at least one actuator comprises a plurality of actuators, and the at least one coupling comprises a plurality of couplings.

4. The upper assembly according to claim 3, wherein the plurality of actuators are arranged on at least one circle about the central axis of the top plate, and the plurality of couplings are arranged on the at least one circle to correspond to the plurality of actuators.

5. The upper assembly according to claim 4, wherein the grooves on the upper part of each of the plurality of connectors open in a direction opposite to the circumferential direction about the central axis which is the horizontal direction into which the first flange is inserted.

6. The top plate includes at least one recess opening in the upper surface of the top plate; the upper part is a lower wall having a substantially horseshoe shape, the lower wall extending below the groove to define the groove; the at least one connector further includes a main body assembled in the at least one recess, and a second flange connected to the main body and projecting upward from the upper surface of the top plate; the lower wall of the upper part is sandwiched between the second flange and the main body of the at least one connector; and the first flange of the lower end of the rod is inserted into the groove between the second flange and the upper wall, the upper assembly according to any one of claims 2 to 5.

7. The upper assembly according to claim 6, wherein the groove includes an upper part into which the first flange is inserted and a lower part into which the second flange is inserted, and the radius of the upper part of the groove and the width of the opening are different from the radius of the lower part of the groove and the width of the opening, respectively.

8. The upper assembly according to claim 7, wherein the radius of the upper part of the groove and the width of the opening are each greater than the radius of the lower part of the groove and the width of the opening.

9. The upper assembly according to any one of claims 2 to 5, wherein the rod includes a rod body and a reduced diameter portion disposed between the rod body and the lower end, the radius of the upper wall of the at least one connector is smaller than the radius of the rod body and greater than or equal to the radius of the reduced diameter portion, and the inner edge of the upper wall of the at least one connector is located in the space between the rod body and the first flange.

10. The upper assembly according to any one of claims 1 to 5, further comprising a heat transfer sheet disposed between the top plate and the base member.

11. A substrate processing apparatus comprising: a chamber; an upper assembly disposed on the processing space within the chamber, wherein the upper assembly comprises: a top plate having an upper surface and configured to extend on the processing space within the chamber of the substrate processing apparatus; a base member disposed on the top plate; at least one actuator configured to lift the top plate and bias the top plate relative to the base member, the actuator comprising a rod having a lower end and a drive unit configured to move the rod up and down; and at least one coupling assembled to the top plate, comprising an upper part protruding from the upper surface of the top plate, the lower end and the upper part having a groove, and the other of the lower end and the upper part having a protrusion that is horizontally insertable and removable into the groove.

12. The substrate processing apparatus according to claim 11, further comprising: at least one temperature sensor configured to measure the temperature of the top plate; and a control unit, wherein the control unit is configured to control at least one actuator in accordance with the temperature of the top plate measured by the at least one temperature sensor.

13. A top plate assembly comprising: a top plate configured to extend over the processing space within the chamber of a substrate processing apparatus; and at least one connector assembled to the top plate, wherein the at least one connector includes an upper portion protruding from the upper surface of the top plate, the upper portion including a groove capable of receiving a protrusion of another member into which a horizontally insertable and removable portion is fitted, or a protrusion into a groove of another member into which a horizontally insertable and removable portion is fitted.