Substrate processing apparatus and substrate processing method

Abstract

This substrate processing apparatus comprises: a chamber; a substrate support part; a first processing gas supply part; a second processing gas supply part; a starting material target which is disposed above a substrate support surface of the substrate support part and contains a starting material of a compound semiconductor, which is disposed so that a surface of the starting material target extends along the flow of a first processing gas, and which is configured so as to emit starting material sputter particles from the surface of the starting material target by means of ions in plasma generated from the first processing gas; and a dopant target which is disposed above the substrate support surface of the substrate support part and contains a dopant of the compound semiconductor, which is disposed so that a surface of the dopant target extends along the flow of a second processing gas, and which is configured so as to emit dopant sputter particles from the surface of the dopant target by means of ions in plasma generated from the second processing gas.

Description

Substrate processing apparatus and substrate processing method

[0001] The exemplary embodiments of this disclosure relate to a substrate processing apparatus and a substrate processing method.

[0002] Materials for LEDs (light-emitting diodes), LDs (laser diodes), high-frequency devices, and power devices include Al ｘ Ga ｙ In （１－Ｘ－Ｙ） Compound semiconductors such as N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1, (x + y) ≤ 1) are used. Conventionally, metal-organic chemical vapor deposition (MOCVD) has been used to deposit such compound semiconductors onto a substrate (see Patent Document 1).

[0003] Japanese Patent Publication No. 2012-84660

[0004] In metal-organic chemical vapor deposition (MOCVD), reaction gases such as trimethylgallium, trimethylaluminum, trimethylindium, ammonia, and hydrogen are used for film deposition. Trimethylgallium, trimethylaluminum, and trimethylindium have high raw material costs, while ammonia and hydrogen are consumed in large quantities, resulting in high production costs. Furthermore, the use of these gases requires exhaust gas treatment equipment, and the running costs of this equipment also contribute to increased production costs.

[0005] This disclosure provides a technology that enables the deposition of compound semiconductor films on a substrate at low cost.

[0006] A substrate processing apparatus in one exemplary embodiment of the present disclosure comprises: a chamber; a substrate support portion disposed within the chamber and including a substrate support surface; a first processing gas supply portion configured to supply a first processing gas toward the substrate support surface; a second processing gas supply portion configured to supply a second processing gas toward the substrate support surface; a raw material target disposed above the substrate support surface of the substrate support portion and containing raw materials for a compound semiconductor, wherein the surface of the raw material target is positioned along the flow of the first processing gas and configured to release sputtered raw material particles from the surface of the raw material target by ions in a plasma generated from the first processing gas; and a dopant target disposed above the substrate support surface of the substrate support portion and containing a dopant for a compound semiconductor, wherein the surface of the dopant target is positioned along the flow of a second processing gas and configured to release sputtered dopant particles from the surface of the dopant target by ions in a plasma generated from the second processing gas.

[0007] According to one exemplary embodiment of the present disclosure, a technology can be provided that enables the deposition of compound semiconductor films on a substrate at low cost.

[0008] This diagram illustrates an example configuration of a substrate processing apparatus. Figure 2(a) is a diagram illustrating an example configuration of the substrate support section, and Figure 2(b) is a diagram illustrating another example configuration of the substrate support section. This is a bottom view of the gas introduction head illustrating an example arrangement of the raw material target and the dopant target. This diagram illustrates an example flowchart of the substrate processing method. This diagram illustrates an example of the behavior of sputtered particles on the substrate surface. This diagram illustrates the behavior of the first processing gas at the raw material target and the behavior of the second processing gas at the dopant target. This is a bottom view of the gas introduction head illustrating another example arrangement of the raw material target and the dopant target. This is a bottom view of the gas introduction head illustrating another example arrangement of the raw material target. This is a diagram illustrating another example configuration of the dopant target. This is a diagram illustrating another example configuration of the first processing gas supply section and the second processing gas supply section.

[0009] The embodiments of this disclosure are described below.

[0010] In one exemplary embodiment, a substrate processing apparatus is provided, comprising: a chamber; a substrate support portion disposed within the chamber and including a substrate support surface; a first processing gas supply unit configured to supply a first processing gas toward the substrate support surface; a second processing gas supply unit configured to supply a second processing gas toward the substrate support surface; a raw material target disposed above the substrate support surface of the substrate support portion and containing raw materials for a compound semiconductor, wherein the surface of the raw material target is positioned along the flow of the first processing gas and configured to release sputtered raw material particles from the surface of the raw material target by ions in a plasma generated from the first processing gas; and a dopant target disposed above the substrate support surface of the substrate support portion and containing a dopant for a compound semiconductor, wherein the surface of the dopant target is positioned along the flow of a second processing gas and configured to release sputtered dopant particles from the surface of the dopant target by ions in a plasma generated from the second processing gas.

[0011] In one exemplary embodiment, the substrate processing apparatus further comprises a first flow rate adjustment unit configured to adjust the flow rate of a first processing gas, and a second flow rate adjustment unit configured to adjust the flow rate of a second processing gas.

[0012] In one exemplary embodiment, the substrate processing apparatus further comprises a first power supply configured to generate plasma from a first processing gas and supply power to a raw material target to cause sputtered raw material particles to be released from the surface of the raw material target by ions in the plasma, and a second power supply configured to generate plasma from a second processing gas and supply power to a dopant target to cause dopant sputtered dopant particles to be released from the surface of the dopant target by ions in the plasma.

[0013] In one exemplary embodiment, the substrate processing apparatus further comprises a rotating part configured to rotate a substrate support.

[0014] In one exemplary embodiment, the substrate processing apparatus further includes a rectifying gas supply unit configured to supply rectifying gas into a chamber to rectify a first processing gas that has passed over the surface of a raw material target and a second processing gas that has passed over the surface of a dopant target in a direction toward the substrate support surface.

[0015] In one exemplary embodiment, the substrate processing apparatus further includes an exhaust unit configured to exhaust gas from within the chamber through the space between the substrate support and the side wall of the chamber.

[0016] In one exemplary embodiment, the surface of the raw material target and the surface of the dopant target are positioned perpendicular to the substrate support surface.

[0017] In one exemplary embodiment, the raw material target has a cylindrical shape, and the first processing gas is configured to pass inside the cylindrical shape of the raw material target.

[0018] In one exemplary embodiment, the dopant target has a cylindrical shape, and the second processing gas is configured to pass inside the cylindrical shape of the dopant target.

[0019] In one exemplary embodiment, the raw material target comprises a compound semiconductor raw material selected from the group consisting of aluminum, gallium, indium, aluminum nitride, gallium nitride, and indium nitride, and the dopant target comprises a compound semiconductor dopant selected from the group consisting of magnesium and silicon.

[0020] In one exemplary embodiment, the first process gas includes nitrogen gas, and the second process gas does not include nitrogen gas.

[0021] In one exemplary embodiment, the first and second process gases include argon gas.

[0022] In one exemplary embodiment, a plurality of raw material targets are arranged, with the plurality of raw material targets positioned in a first region above the substrate support surface and a second region outside the first region above the substrate support surface.

[0023] In one exemplary embodiment, the flow rate of the first processing gas flowing over the surface of the raw material target in the first region and the flow rate of the first processing gas flowing over the surface of the raw material target in the second region are individually adjustable.

[0024] In one exemplary embodiment, the multiple raw material targets include raw material targets whose raw materials differ from each other.

[0025] In one exemplary embodiment, multiple dopant targets are arranged, with the multiple dopant targets located in a first region and a second region, respectively.

[0026] In one exemplary embodiment, the flow rate of the second processing gas flowing over the surface of the dopant target in the first region and the flow rate of the second processing gas flowing over the surface of the dopant target in the second region are independently adjustable.

[0027] In one exemplary embodiment, the multiple dopant targets include dopant targets that are different from each other.

[0028] In one exemplary embodiment, the first processing gas supply unit includes a first buffer chamber, a first processing gas flow path located inside the raw material target, and a first connecting pipe connecting the first buffer chamber and the first processing gas flow path, wherein the flow path diameter of the first connecting pipe is smaller than the diameter of the first processing gas flow path.

[0029] In one exemplary embodiment, a plurality of raw material targets are arranged, and the first processing gas supply unit has a first buffer chamber, a plurality of first processing gas flow paths arranged inside each of the plurality of raw material targets, and a plurality of first connecting pipes connecting the first buffer chamber and each of the plurality of first processing gas flow paths.

[0030] The second processing gas supply unit includes a second buffer chamber, a second processing gas flow path located inside the dopant target, and a second connecting pipe connecting the second buffer chamber and the second processing gas flow path, wherein the flow path diameter of the second connecting pipe is smaller than the diameter of the second processing gas flow path.

[0031] Multiple dopant targets are arranged, and the second processing gas supply unit has a second buffer chamber, multiple second processing gas flow paths arranged inside each of the multiple dopant targets, and multiple second connecting pipes connecting the second buffer chamber and each of the multiple second processing gas flow paths.

[0032] In one exemplary embodiment, a substrate processing method is provided, comprising the steps of (a) providing a substrate on a substrate support in a chamber, and (b) supplying a first processing gas and a second processing gas to the substrate on the substrate support to form a compound semiconductor film on the substrate, wherein (b) includes (b-1) flowing the first processing gas along the surface of a raw material target, using ions in the plasma generated from the first processing gas to release raw material sputtered particles from the surface of the raw material target, and supplying the first processing gas containing the raw material sputtered particles toward the substrate, and (b-2) flowing the second processing gas along the surface of a dopant target, using ions in the plasma generated from the second processing gas to release dopant sputtered particles from the surface of the dopant target, and supplying the second processing gas containing the dopant sputtered particles toward the substrate.

[0033] In one exemplary embodiment, the raw material target includes raw materials for compound semiconductors selected from the group consisting of aluminum, gallium, indium, aluminum nitride, gallium nitride, and indium nitride. The dopant target includes dopants for compound semiconductors selected from the group consisting of magnesium and silicon. The first processing gas includes nitrogen gas and argon gas. The second processing gas includes argon gas and does not include nitrogen gas.

[0034] Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are denoted by the same reference numerals, and redundant descriptions are omitted. Unless otherwise specified, the positional relationships such as up, down, left, and right are described based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not represent actual ratios, and the actual ratios are not limited to the illustrated ratios.

[0035] <An example of a substrate processing apparatus> FIG. 1 is a diagram for explaining a configuration example of a substrate processing apparatus 1. In one embodiment, the substrate processing apparatus 1 is a film forming apparatus that forms a film on a substrate. In one embodiment, the substrate processing apparatus 1 is a sputtering apparatus that performs sputtering processing on a substrate. The substrate processing apparatus 1 is an apparatus that forms a compound semiconductor film on a substrate.

[0036] In one embodiment, the substrate processing apparatus 1 includes a chamber 10, a substrate support portion 11, a rotation portion 12, a gas introduction head 13, a raw material target 14, a dopant target 15, a first processing gas supply portion 16, a second processing gas supply portion 17, a first power supply 18, a second power supply 19, a rectifying gas supply portion 20, an exhaust portion 21, a liner 22, and a control portion 23.

[0037] The chamber 10 is configured to form a processing space 10s inside. The substrate support portion 11 is disposed inside the chamber 10. The substrate support portion 11 is disposed below the processing space 10s.

[0038] The substrate support portion 11 has a disk shape with a thickness in the vertical direction (up and down direction). The substrate support portion 11 is made of an insulating member and has a substrate support surface 11a on its upper surface for supporting the substrate W. The substrate support portion 11 has an electrostatic chuck electrode 11b. The electrostatic chuck electrode 11b is made of a conductive member. Also, the substrate support portion 11 has a heater 11c. The heater 11c generates heat by power supply and is configured to adjust the temperature of the substrate W on the substrate support portion 11 and the substrate support surface 11a.

[0039] Incidentally, the substrate support portion 11 may not have the electrostatic chuck electrode 11b. When it does not have the electrostatic chuck electrode 11b, as shown in Fig. 2(a), a recess 11d is provided on the substrate support surface 11a, and the substrate W is housed in the recess 11d. The shape of the recess 11d provided on the substrate support surface 11a may be slightly wider than the outer diameter of the substrate W and have a depth approximately the same as the thickness of the substrate W. Further, as shown in Fig. 2(b), the shape of the recess 11d provided on the substrate support surface 11a may penetrate the central portion of the bottom of the recess 11d to the heater 11c, exposing the heater 11c, while leaving the outer peripheral portion of the bottom of the recess 11d. By doing so, the outer peripheral portion of the substrate W is held by the outer peripheral portion of the recess 11d on the substrate support surface 11a, and the central portion of the substrate W directly faces the heater 11c.

[0040] As shown in Fig. 1, the rotating portion 12 is configured to rotate the substrate support portion 11 around the central axis of the substrate support portion 11. The rotating portion 12 can rotate the substrate support portion 11 at 300 rpm or more. The rotating portion 12 has a support member (rotating shaft) for supporting the substrate support portion 11 and a motor or the like for rotating the support member.

[0041] The gas introduction head 13 is disposed on the ceiling of the chamber 10 above the substrate support portion 11. The gas introduction head 13 has a disk shape with a thickness in the vertical direction. The gas introduction head 13 has a diameter larger than that of the substrate support portion 11. The gas introduction head 13 is made of an insulating material.

[0042] A plurality of raw material targets 14 are arranged above the substrate support surface 11a of the substrate support portion 11. The raw material targets 14 are supported by the gas introduction head 13.

[0043] In one embodiment, the raw material target 14 has a cylindrical shape. The raw material target 14 has a first processing gas channel 50 formed inside its cylindrical shape. That is, the raw material target 14 has a tubular surface 14a that forms the first processing gas channel 50, and the surface 14a is arranged to follow the flow of the first processing gas flowing through the first processing gas channel 50. The raw material target 14 is arranged so that its central axis is oriented in the vertical direction, and the inner surface 14a of the raw material target 14 is arranged to be perpendicular to the substrate support surface 11a.

[0044] The raw material target 14 contains raw materials for a compound semiconductor to be formed on the substrate. ｘ Ga ｙ In （１－Ｘ－Ｙ） When forming an N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1, (x + y) ≤ 1) film (such as aluminum nitride, gallium nitride, or indium nitride), the raw material target 14 includes a compound semiconductor raw material selected from the group consisting of aluminum, gallium, indium, aluminum nitride, gallium nitride, and indium nitride.

[0045] Multiple dopant targets 15 are arranged above the substrate support surface 11a of the substrate support section 11. The dopant targets 15 are supported by the gas introduction head 13.

[0046] In one embodiment, the dopant target 15 has a cylindrical shape. The dopant target 15 has a second processing gas channel 60 formed inside its cylindrical shape. That is, the dopant target 15 has a tubular surface 15a that forms the second processing gas channel 60, and the surface 15a is positioned to follow the flow of the second processing gas flowing through the second processing gas channel 60. The dopant target 15 is positioned so that its central axis is oriented vertically, and the inner surface 15a of the dopant target 15 is positioned perpendicular to the substrate support surface 11a.

[0047] In one embodiment, the dopant target 15 includes a dopant to be injected into a compound semiconductor film formed on a substrate. ｘ Ga ｙ In（１－Ｘ－Ｙ） When forming a film of N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1, (x + y) ≤ 1) (such as aluminum nitride, gallium nitride, indium nitride, etc.), the dopant target 15 contains a dopant of a compound semiconductor selected from the group consisting of magnesium (p-type dopant) and silicon (n-type dopant).

[0048] As shown in FIG. 3, the plurality of raw material targets 14 are arranged without bias within the plane of the gas introduction head 13. In one embodiment, the plurality of raw material targets 14 are arranged in each of a plurality of regions partitioned concentrically with the center of the substrate support surface 11a as the center in a plan view. For example, the plurality of raw material targets 14 are arranged in a first region R1 of the gas introduction head 13 located above the substrate support surface 11a, a second region R2 outside the first region R1 located above the substrate support surface 11a, and a third region R3 outside the second region R2 located above the substrate support surface 11a, respectively. In one embodiment, the first region R1 is a circular region including the center of the substrate support surface 11a in a plan view. The second region R2 is an annular region surrounding the first region R1. The third region R3 is an annular region surrounding the second region R2.

[0049] For example, one raw material target 14 is arranged in the first region R1. A plurality of raw material targets 14 are arranged in the second region R2. The plurality of raw material targets 14 in the second region R2 are arranged on the same circumference. A plurality of raw material targets 14 are arranged in the third region R3. The plurality of raw material targets 14 in the third region R3 are arranged on the same circumference.

[0050] In one embodiment, multiple dopant targets 15 are arranged in a second region R2 and a third region R3, respectively. No dopant targets 15 are arranged in the first region R1. Multiple dopant targets 15 are arranged in the second region R2. The dopant targets 15 in the second region R2 are arranged on the same circumference. Multiple dopant targets 15 are arranged in the third region R3. The multiple dopant targets 15 in the third region R3 are arranged on the same circumference. The number of raw material targets 14 is greater than the number of dopant targets 15. The number of raw material targets 14 in the second region R2 is greater than the number of dopant targets 15. The number of raw material targets 14 in the third region R3 is greater than the number of dopant targets 15.

[0051] In one embodiment, as shown in Figure 1, the first processing gas supply unit 16 has a first processing gas flow path 50 and a first processing gas supply port 51. The first processing gas flow path 50 is formed inside the surface 14a of the raw material target 14. The first processing gas flow path 50 extends in the vertical direction. The first processing gas supply port 51 opens to the lower surface of the first processing gas flow path 50. The first processing gas supply port 51 faces the substrate support surface 11a.

[0052] The first processing gas flow path 50 is connected to at least one first processing gas supply system 70 via a first processing gas introduction pipe 53. The first processing gas supply system 70 is configured to supply the first processing gas to the first processing gas flow path 50. The first processing gas supply system 70 includes a gas source and a gas flow rate controller. The first processing gas supply system 70 is an example of a first flow rate adjustment unit. The first processing gas supply system 70 may be configured to adjust the flow rate of the first processing gas flowing out of the first processing gas flow path 50 to a first flow rate. The first processing gas supply unit 16 may include part or all of the first processing gas supply system 70.

[0053] Al, a compound semiconductor, is placed on the substrate. ｘ Ga ｙ In （１－Ｘ－Ｙ）When depositing an N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1, (x + y) ≤ 1) film (such as aluminum nitride, gallium nitride, or indium nitride), the first processing gas includes argon gas and nitrogen gas.

[0054] In one embodiment, the second processing gas supply unit 17 has a second processing gas flow path 60 and a second processing gas supply port 61. The second processing gas flow path 60 is formed inside the surface 15a of the dopant target 15. The second processing gas supply port 61 opens to the lower surface of the second processing gas flow path 60. The second processing gas supply port 61 faces the substrate support surface 11a.

[0055] The second processing gas flow path 60 is connected to at least one second processing gas supply system 80 via a second processing gas introduction pipe 63. The second processing gas supply system 80 is configured to supply the second processing gas to the second processing gas flow path 60. The second processing gas supply system 80 includes a gas source and a gas flow rate controller. The second processing gas supply system 80 is an example of a second flow rate adjustment unit. The second processing gas supply system 80 may be configured to adjust the flow rate of the second processing gas flowing out of the second processing gas supply port 61 to a second flow rate. The second flow rate may be different from the first flow rate. The second processing gas supply unit 17 may include part or all of the second processing gas supply system 80.

[0056] Al, a compound semiconductor, is placed on the substrate. ｘ Ga ｙ In （１－Ｘ－Ｙ） When depositing N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1, (x + y) ≤ 1) films (such as aluminum nitride, gallium nitride, or indium nitride), the second processing gas does not contain gases that react with the magnesium or silicon dopant. The second processing gas contains argon gas but does not contain nitrogen gas.

[0057] The first power supply 18 is electrically connected to the electrode 54 of the raw material target 14. In one embodiment, the first power supply 18 supplies first power to the raw material target 14, thereby generating plasma from the first processing gas flowing inside the first processing gas channel 50, causing ions in the plasma to collide with the surface 14a of the raw material target 14, and releasing raw material sputtered particles from the raw material target 14.

[0058] In one embodiment, the first power supply 18 includes a DC power supply and / or an RF power supply. The DC power supply is configured to supply a DC signal to the electrodes 54 of the raw material target 14. The RF power supply is configured to supply an RF signal (high-frequency signal) to the electrodes 54 of the raw material target 14 via a matching circuit (not shown). The DC power supply may include a pulsed DC power supply.

[0059] The second power supply 19 is electrically connected to the electrode 64 of the dopant target 15. In one embodiment, the second power supply 19 supplies a second power to the dopant target 15, thereby generating plasma from the second processing gas flowing inside the second processing gas channel 60, causing ions in the plasma to collide with the surface 15a of the dopant target 15, and releasing dopant sputtered particles from the dopant target 15.

[0060] The second power supply 19 includes a DC power supply and / or an RF power supply. The DC power supply is configured to supply a DC signal to the electrodes 64 of the dopant target 15. The RF power supply is configured to supply an RF signal (high-frequency signal) to the electrodes 64 of the dopant target 15 via a matching circuit (not shown). The DC power supply may include a pulsed DC power supply.

[0061] The rectifying gas supply unit 20 is configured to supply rectifying gas into the chamber 10 for rectifying the first processing gas flowing out from the first processing gas flow path 50 and the second processing gas flowing out from the second processing gas flow path 60. The rectifying gas supply unit 20 is positioned above the substrate support unit 11 and is configured to supply the rectifying gas toward the substrate support unit 11. In one embodiment, the rectifying gas supply unit 20 has a rectifying gas diffusion chamber 90, a rectifying gas flow path 91, and a rectifying gas supply port 92.

[0062] The rectified gas diffusion chamber 90 is located at the top of the chamber 10. The rectified gas diffusion chamber 90 is located above the gas introduction head 13.

[0063] Multiple straightening gas passages 91 are arranged in the gas introduction head 13. The multiple straightening gas passages 91 lead to the straightening gas diffusion chamber 90. The straightening gas passages 91 are formed to penetrate the gas introduction head 13 in the vertical direction. The vertical length of the straightening gas passages 91 is the same as that of the raw material target 14 and the dopant target 15. However, the vertical length of the straightening gas passages 91 may be shorter than that of the raw material target 14 and the dopant target 15. A straightening gas supply port 92 opens at the lower end of the straightening gas passage 91. The straightening gas supply port 92 opens on the lower surface of the gas introduction head 13.

[0064] As shown in Figure 3, the multiple rectifier gas supply ports 92 are arranged near the first processing gas supply port 51, surrounding the first processing gas supply port 51. Also, the multiple rectifier gas supply ports 92 are arranged near the second processing gas supply port 61, surrounding the second processing gas supply port 61. As shown in Figure 1, some of the multiple rectifier gas supply ports 92 are positioned so as not to face the substrate support surface 11a. That is, some of the multiple rectifier gas supply ports 92 are arranged to supply rectifier gas toward an area outside the substrate support surface 11a. The first processing gas supply port 51 and the second processing gas supply port 61 may have a larger diameter than the rectifier gas supply ports 92.

[0065] The rectifying gas diffusion chamber 90 is connected to at least one rectifying gas supply system 100 via a rectifying gas introduction pipe 93. The rectifying gas supply system 100 includes a gas source and a gas flow rate controller. The rectifying gas supply system 100 may be configured to adjust the rectifying gas flowing out of the rectifying gas flow path 91 to a third flow rate. The third flow rate may be different from the first and second flow rates. The rectifying gas may be a gas that does not directly participate in the formation of a compound semiconductor film. The rectifying gas may include argon gas but may not include nitrogen gas or oxygen gas. The rectifying gas supply unit 20 may include part or all of the rectifying gas supply system 100.

[0066] The exhaust section 21 is configured to exhaust gas from the processing space 10s inside the chamber 10 through the space between the substrate support section 11 and the side wall 10a of the chamber 10. The exhaust section 21 has a baffle plate 110 and a gas exhaust port 111.

[0067] The baffle plate 110 is positioned between the substrate support portion 11 and the side wall 10a of the chamber 10. The baffle plate 110 has an annular plate shape that surrounds the outer circumference of the substrate support portion 11. The baffle plate 110 has a plurality of openings 120 that penetrate in the vertical direction. The openings 120 may be round holes or radially elongated slits.

[0068] The gas exhaust port 111 is located at the bottom 10b of the chamber 10. The gas exhaust port 111 is positioned below the baffle plate 110. One or more gas exhaust ports 111 may be provided around the substrate support portion 11 in a plan view. Multiple gas exhaust ports 111 are arranged at equal intervals around the substrate support portion 11 in a plan view. The gas exhaust ports 111 are connected to an exhaust system 130. The exhaust system 130 includes a pressure regulating valve and a vacuum pump. The exhaust system 130 can reduce the pressure of the processing space 10s of the chamber 10 to a range of 10 Pa to 5 kPa.

[0069] The liner 22 is located outside the substrate support portion 11 and inside the side wall 10a of the chamber 10. The liner 22 has a cylindrical shape. The liner 22 extends vertically from near the bottom 10b of the chamber 10 to near the gas introduction head 13. Alternatively, the liner 22 may be divided vertically at a height near the substrate support portion 11, and a vertical drive mechanism (not shown) may be provided in the lower liner to form a transport opening between the upper and lower liner, through which the substrate W may be loaded into and unloaded from the chamber 10.

[0070] The control unit 23 processes computer-executable instructions that cause the substrate processing apparatus 1 to perform the various processes described herein. The control unit 23 may be configured to control each element of the substrate processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 23 may be included in the substrate processing apparatus 1. The control unit 23 is implemented, for example, by a computer 2a. The control unit 23 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The functions realized by the processing unit 2a1 described herein may be implemented in a circuit or processing circuit, including a general-purpose processor, an application-specific processor, integrated circuits, ASICs (Application Specific Integrated Circuits), a CPU (Central Processing Unit), a conventional circuit, and / or a combination thereof, programmed to realize the described functions. The processor is considered to be a circuit or processing circuit, including transistors and other circuits. The processor may be a programmed processor that executes a program stored in the storage unit 2a2. This program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the substrate processing device 1 via a communication line such as a LAN (Local Area Network).In this disclosure, circuits, units, and means are hardware programmed to perform or configured to perform the functions described. Such hardware may be any hardware described in this disclosure, or any hardware known to be programmed to perform or execute the functions described. If such hardware is a processor that is considered to be a type of circuit, such circuit, means, or unit is a combination of hardware and software used to constitute such hardware and / or processor.

[0071] <Example of Substrate Processing Method> Figure 4 is a flowchart showing an example of a substrate processing method (hereinafter also referred to as "this processing method") according to one exemplary embodiment. In one embodiment, this processing method includes a step ST1 of providing a substrate W on a substrate support 11, and a step ST2 of supplying a first processing gas and a second processing gas to the substrate W to form a compound semiconductor film on the substrate W. This processing method is for forming a film on the substrate W. This processing method is performed by the substrate processing apparatus 1 shown in Figure 1. The control unit 23 controls each part of the substrate processing apparatus 1 to perform this processing method on the substrate W.

[0072] (Step ST1: Provision of the substrate) In step ST1, as shown in Figure 1, the substrate W is provided into the chamber 10 of the substrate processing apparatus 1. The substrate W is provided on the substrate support surface 11a of the substrate support part 11. The substrate W is held by the electrostatic chuck 11b.

[0073] After the substrate W is provided to the substrate support 11, or before the substrate W is provided to the substrate support 11, the temperature of the substrate support 11 or the substrate W is adjusted to a given temperature by the heater 11c. The given temperature may be in the range of 0°C to 2000°C. In addition, the pressure inside the chamber 10 may be reduced to a range of 10 Pa to 5 kPa by the exhaust system 130.

[0074] (Step ST2: Substrate film formation process) In step ST2, while rotating the substrate support 11, a first processing gas and a second processing gas are supplied to the substrate W on the substrate support 11 to form a compound semiconductor film on the substrate W.

[0075] In step ST2, the substrate support portion 11 (substrate W) is rotated at high speed by the rotating portion 12 at a speed of 300 rpm or more, preferably in the range of 300 rpm to 2000 rpm.

[0076] The rectifying gas supply unit 20 supplies rectifying gas into the chamber 10. The rectifying gas is supplied from each rectifying gas supply port 92 towards the substrate W and its outer periphery through the rectifying gas introduction pipe 93, the rectifying gas diffusion chamber 90, and each of the multiple rectifying gas flow paths 91.

[0077] The first processing gas is supplied onto the substrate W via each of the multiple first processing gas flow paths 50 by the first processing gas supply unit 16. Power is supplied to each of the multiple raw material targets 14 by the first power supply 18. As a result, plasma is generated from a portion of the first processing gas, and ions in the plasma collide with the surface 14a of the raw material target 14, thereby releasing raw material sputtered particles from the surface 14a of the raw material target 14. The raw material sputtered particles are released from the first processing gas supply port 51 toward the substrate W on the substrate support surface 11a.

[0078] The second processing gas supply unit 17 supplies the second processing gas onto the substrate W via each of the multiple second processing gas flow paths 60. The second power supply 19 supplies power to each of the multiple dopant targets 15. As a result, plasma is generated from a portion of the second processing gas, and ions in the plasma collide with the surface 15a of the dopant target 15, causing dopant sputtered particles to be emitted from the surface 15a of the dopant target 15. The dopant sputtered particles are emitted from the second processing gas supply port 61 toward the substrate W on the substrate support surface 11a.

[0079] The rectifying gas flows downward, surrounding the first processing gas containing raw material sputtered particles that flow out from the first processing gas supply port 51, and the second processing gas containing dopant sputtered particles that flow out from the second processing gas supply port 61. The first and second processing gases are rectified by the rectifying gas, suppressing convection and diffusion, and reach the surface of the substrate W.

[0080] As shown in Figure 5, as the substrate W rotates at a high speed of 300 rpm or more, the first and second processing gases are rectified as they reach the substrate W, thereby uniformly and sufficiently supplying raw material sputtered particles SP1 and dopant sputtered particles SP2 to the surface of the substrate W. At this time, the high-speed rotation of the substrate W forms a thin, uniform gas boundary layer R on the surface of the substrate W. This thin, uniform gas boundary layer R allows the raw material sputtered particles SP1 and dopant sputtered particles SP2 to be supplied to the surface of the substrate W quickly and uniformly. In this way, a uniform film F is formed on the surface of the substrate W in a short time by the gas containing the raw material sputtered particles SP1 and dopant sputtered particles SP2.

[0081] The gas on the surface of the substrate W flows from the center outwards. Also, as shown in Figure 1, the rectified gas flowing out from the rectified gas supply port 92 on the outer circumference of the gas introduction head 13 descends through the outer circumference of the first and second processing gases, and the rectified gas flowing out from the rectified gas supply port 92 on the inner circumference of the gas introduction head 13. The gas flowing from the center outwards on the surface of the substrate W and the rectified gas flowing out from the rectified gas supply port 92 on the outer circumference of the gas introduction head 13 merge and are exhausted from the gas exhaust port 111 through the baffle plate 110 on the outside of the substrate support part 11. The rectified gas flowing out from the rectified gas supply port 92 of the gas introduction head 13 suppresses the convection of the gas containing the raw material sputtered particles SP1 and dopant sputtered particles SP2. As a result, the gas containing the raw material sputtered particles SP1 and dopant sputtered particles SP2 is uniformly supplied to the surface of the substrate W, and a uniform film F is generated.

[0082] Subsequently, the supply of the first processing gas, the second processing gas, and the rectifying gas is stopped, and the rotation of the substrate support unit 11 is stopped. After that, the substrate W is removed from the substrate processing apparatus 1, and the substrate processing is completed.

[0083] According to this exemplary embodiment, the substrate processing apparatus 1 comprises a chamber 10, a substrate support section 11, a raw material target 14, a dopant target 15, a first processing gas supply section 16, and a second processing gas supply section 17. This allows the first processing gas from the first processing gas supply section 16 to flow along the surface 14a of the raw material target 14, and uses ions in the plasma generated from the first processing gas to release raw material sputtered particles SP1 from the surface 14a of the raw material target 14, thereby supplying the first processing gas containing the raw material sputtered particles SP1 toward the substrate W. Furthermore, the second processing gas can be flowed along the surface 15a of the dopant target 15, and uses ions in the plasma generated from the second processing gas to release dopant sputtered particles SP2 from the surface 15a of the dopant target 15, thereby supplying the second processing gas containing the dopant sputtered particles SP2 toward the substrate W. This makes it possible to deposit a compound semiconductor film on a substrate at low cost without using metal-organic chemical vapor deposition (MOCVD).

[0084] Furthermore, according to this exemplary embodiment, since the substrate processing apparatus 1 includes a first processing gas supply unit 16 and a second processing gas supply unit 17, appropriate gases can be supplied to the surface 14a of the raw material target 14 and the surface 15a of the dopant target 15, respectively. For example, as shown in Figure 6, the first processing gas supplied to the surface 14a of the raw material target 14 can include nitrogen gas that reacts with the raw material of the raw material target 14 (e.g., GaN), while the second processing gas supplied to the surface 15a of the dopant target 15 can exclude nitrogen gas that reacts with the dopant of the dopant target 15 (Mg or Si). As a result, the supply of dopants that have reacted with nitrogen gas to the substrate in the form of compounds (MgN, SiN) is suppressed. It is believed that dopants in the form of compounds are not implanted into the lattice points of the crystal lattice of the compound semiconductor, but instead enter the interstitial spaces, becoming inactive and making charge control difficult. According to this exemplary embodiment, since dopants can be supplied to the substrate in their elemental form, dopant implantation is performed appropriately, and the deposition of the compound semiconductor film is performed appropriately.

[0085] According to this exemplary embodiment, the substrate processing apparatus 1 includes a first flow rate adjustment unit configured to adjust the flow rate of a first processing gas, and a second flow rate adjustment unit configured to adjust the flow rate of a second processing gas. This allows the flow rates of the first processing gas flowing over the surface 14a of the raw material target 14 and the second processing gas flowing over the surface 15a of the dopant target 15 to be adjusted to appropriate levels. As a result, compound semiconductor film deposition is performed appropriately. Furthermore, since the concentration distribution of emitted sputtered particles on the substrate can be adjusted, the uniformity of the film deposition within the substrate surface can be improved.

[0086] According to this exemplary embodiment, the substrate processing apparatus 1 includes a first power supply 18 configured to generate plasma from a first processing gas and supply power to the raw material target 14 so that ions in the plasma can release raw material sputtered particles from the surface 14a of the raw material target 14, and a second power supply 19 configured to generate plasma from a second processing gas and supply power to the dopant target 15 so that ions in the plasma can release dopant sputtered particles from the surface 15a of the dopant target 15. This allows for the generation of plasma by supplying appropriate power to the raw material target 14 and the dopant target 15, respectively. As a result, sputtered particles are appropriately released from the raw material target 14 and the dopant target 15, and the compound semiconductor film deposition is performed appropriately. Furthermore, since the concentration distribution of the released sputtered particles on the substrate can be adjusted, the uniformity of the film deposition on the substrate surface can be improved.

[0087] According to this exemplary embodiment, the substrate processing apparatus 1 includes a rotating unit 12. The rotating unit 12 can rotate the substrate W while supplying a first processing gas and a second processing gas containing sputtered particles to the substrate W. This improves the uniformity of the film formation within the substrate surface.

[0088] According to this exemplary embodiment, the substrate processing apparatus 1 includes a rectifying gas supply unit 20. The rectifying gas supply unit 20 can rectify the first processing gas and the second processing gas so that they flow toward the substrate, thereby suppressing the diffusion and convection of the first and second processing gases and efficiently supplying the first and second processing gases to the substrate W.

[0089] According to this exemplary embodiment, the substrate processing apparatus 1 is equipped with an exhaust unit 21. The exhaust unit 21 can exhaust the first processing gas and the second processing gas on the substrate by flowing them from the center of the substrate W outwards. As a result, the first processing gas and the second processing gas are supplied more uniformly to the surface of the substrate W, improving the uniformity of film formation within the substrate surface.

[0090] According to this exemplary embodiment, the substrate processing apparatus 1 includes a liner 22 positioned outside the substrate support portion 11 and inside the side wall 10a of the chamber 10, thereby suppressing the diffusion and convection of the first and second processing gases. This prevents reaction products from adhering to the side wall 10a of the chamber 10.

[0091] Multiple raw material targets 14 are arranged, with each target positioned in a first region R1 above the substrate support surface 11a, a second region R2 outside the first region R1 above the substrate support surface 11a, and a third region R3 outside the second region R2. This allows raw material sputtered particles to be supplied to the entire surface of the substrate, improving the uniformity of the film deposition within the substrate surface. The number of regions where multiple raw material targets 14 are arranged is not limited to three, but may be two, four or more.

[0092] According to this exemplary embodiment, multiple dopant targets 15 are arranged, with each dopant target 15 positioned in a second region R2 and a third region R3, respectively. This allows dopant sputtered particles to be supplied to the entire surface of the substrate, improving the uniformity of the film deposition on the substrate surface. The number of regions in which multiple dopant targets 15 are arranged is not limited to two, but may be one or three or more.

[0093] In the above embodiment, the flow rate of the first processing gas flowing over the surface 14a of the raw material target 14 in the first region R1, the flow rate of the first processing gas flowing over the surface 14a of the raw material target 14 in the second region R2, and the flow rate of the first processing gas flowing over the surface 14a of the raw material target 14 in the third region R3 may be individually adjustable. The flow rate of the first processing gas in each region may be controlled by one or more first processing gas supply systems 70. This allows for adjustment of the concentration distribution of sputtered particles emitted from the raw material target 14 on the substrate, thereby improving the uniformity of the film formation within the substrate surface.

[0094] In the above embodiment, the flow rate of the second processing gas flowing over the surface 15a of the dopant target 15 in the second region R2 and the flow rate of the second processing gas flowing over the surface 15a of the dopant target 15 in the third region R3 can be adjusted individually. The flow rate of the second processing gas in each region may be controlled by one or more second processing gas supply systems 80. This allows for adjustment of the concentration distribution of sputtered particles emitted from the dopant target 15 on the substrate, thereby improving the uniformity of the film deposition within the substrate surface.

[0095] The number and arrangement of the raw material targets 14 and dopant targets 15 are not limited to the above example. For example, as shown in Figure 7, both raw material targets 14 and dopant targets 15 may be arranged in the first region R1.

[0096] Multiple dopant targets 15 may include dopant targets whose dopants are different from each other. For example, as shown in Figure 8, multiple dopant targets 15 in the second region R2 and / or third region R3 may include dopant target 15-1 whose dopant is magnesium (p-type dopant) and dopant target 15-2 whose dopant is silicon (n-type dopant).

[0097] The multiple raw material targets 14 may include raw material targets whose raw materials are different from each other. The multiple raw material targets 14 may have two or more selected from the group consisting of raw material targets made of aluminum, raw material targets made of indium, raw material targets made of gallium, raw material targets made of aluminum nitride, raw material targets made of indium nitride, and raw material targets made of gallium nitride.

[0098] As shown in Figure 9, in the above embodiment, the raw material target 14 may be an opposing plate type having plates facing each other. In one embodiment, the raw material target 14 has a first plate 160 and a second plate 161. The first plate 160 and the second plate 161 contain the raw materials for the compound semiconductor to be formed. The first plate 160 and the second plate 161 are arranged in a gas introduction head 13. The first plate 160 and the second plate 161 are spaced apart from each other, and a first processing gas flow path 50 and a first processing gas supply port 51 are formed between them. The first plate 160 has a first electrode 160a on its outer surface opposite to the first processing gas flow path 50, and the second plate 161 has a second electrode 161a on its outer surface opposite to the first processing gas flow path 50. The first electrode 160a and the second electrode 161a are electrically connected to a first power supply 18. Multiple raw material targets 14 are arranged in the gas introduction head 13. In this example, the dopant target 15 may be cylindrical as described above.

[0099] As shown in Figure 10, the dopant target 15 may be an opposing plate type having plates facing each other. The dopant target 15 has a first plate 170 and a second plate 171. The first plate 170 and the second plate 171 contain a compound semiconductor dopant to be deposited. The first plate 170 and the second plate 171 are arranged in the gas introduction head 13. The first plate 170 and the second plate 171 are spaced apart from each other, and a second processing gas channel 60 and a second processing gas supply port 61 are formed between them. The first plate 170 has a first electrode 170a on its outer surface opposite to the second processing gas channel 60, and the second plate 171 has a second electrode 171a on its outer surface opposite to the second processing gas channel 60. The first electrode 170a and the second electrode 171a are electrically connected to a second power supply 19. Multiple dopant targets 15 are arranged on the gas introduction head 13.

[0100] The number of dopant targets 15 may be less than the number of raw material targets 14. The longitudinal length of the dopant targets 15 may be shorter than the longitudinal length of the raw material targets 14. The rectifying gas flow path 91 and rectifying gas supply port 92 are arranged around the raw material targets 14 and dopant targets 15. The rectifying gas flow path 91 and rectifying gas supply port 92 are also arranged on the outer circumference of the gas introduction head 13.

[0101] In the above embodiment, as shown in Figure 11, the first processing gas supply unit 16 may have one first buffer chamber 300, a plurality of first processing gas flow paths 50 arranged inside each of the plurality of raw material targets 14, and a plurality of first connecting pipes 301 connecting the first buffer chamber 300 and each of the plurality of first processing gas flow paths 50. The flow path diameter of each first connecting pipe 301 is smaller than the diameter of each first processing gas flow path 50. In one embodiment, the first buffer chamber 300 is arranged on the top plate 10c of the chamber 10. The first buffer chamber 300 is arranged in a circular shape so as to cover the upper surface of the gas introduction head 13. The number and arrangement of the first buffer chambers 300 can be changed as appropriate.

[0102] The first buffer chamber 300 is connected to the first processing gas supply system 70 via the first processing gas supply pipe 302. The first processing gas is supplied from the first processing gas supply system 70 to the first buffer chamber 300 and from the first buffer chamber 300 to the first processing gas flow path 50 of each raw material target 14 via each first connecting pipe 301.

[0103] According to this exemplary embodiment, since the flow path diameter of the first connecting pipe 301 is smaller than the diameter of the first processing gas flow path 50, even if the multiple raw material targets 14 are consumed at different rates and the diameters of the multiple first processing gas flow paths 50 gradually increase at different rates, the flow rate of each first processing gas flowing through the multiple first processing gas flow paths 50 is kept almost constant, largely depending on the respective flow path diameters of the multiple first connecting pipes 301. Therefore, changes in the in-plane distribution of the flow rate of the first processing gas supplied onto the substrate W over time are suppressed, and multiple substrates W can be processed stably.

[0104] In the above embodiments, the second processing gas supply unit 17 may have a second buffer chamber 350, a plurality of second processing gas flow paths 60 arranged inside each of the plurality of dopant targets 15, and a plurality of second connecting pipes 351 connecting the second buffer chamber 350 and each of the plurality of second processing gas flow paths 60. The flow path diameter of each second connecting pipe 351 is smaller than the diameter of each second processing gas flow path 60. In one embodiment, the second buffer chamber 350 is arranged on the first buffer chamber 300. The second buffer chamber 350 may be arranged on the top plate 10c of the chamber 10. The second buffer chamber 350 is arranged in a circular shape so as to cover the upper surface of the gas introduction head 13. The number and arrangement of the second buffer chambers 350 can be changed as appropriate. The second buffer chamber 350 and the first buffer chamber 300 may be stacked vertically, and the second buffer chamber 350 may be above or below the first buffer chamber 300.

[0105] The second buffer chamber 350 is connected to the second processing gas supply system 80 via the second processing gas supply pipe 352. The second processing gas is supplied from the second processing gas supply system 80 to the second buffer chamber 350 and from the second buffer chamber 350 to the second processing gas flow path 60 of each dopant target 15 via each second connecting pipe 351.

[0106] According to this exemplary embodiment, since the flow path diameter of the second connecting pipe 351 is smaller than the diameter of the second processing gas flow path 60, even if the multiple dopant targets 15 are consumed at different rates and the diameters of the multiple second processing gas flow paths 60 gradually increase at different rates, the flow rate of each second processing gas flowing through the multiple second processing gas flow paths 60 is kept almost constant, largely depending on the respective flow path diameters of the multiple second connecting pipes 351. Therefore, changes in the in-plane distribution of the flow rate of the second processing gas supplied onto the substrate W over time are suppressed, and multiple substrates W can be processed stably.

[0107] The flow path diameters of the multiple first connecting pipes 301 may be different from each other. The flow path diameters of the multiple second connecting pipes 351 may be different from each other. The flow path diameters of the first connecting pipes 301 and the flow path diameters of the second connecting pipes 351 may be the same or different.

[0108] In the embodiment described above, the flow path diameter of the first processing gas introduction pipe 53 in Figure 1 may be smaller than the diameter of the first processing gas flow path 50 located inside the raw material target 14. The flow path diameter of the second processing gas introduction pipe 63 may be smaller than the diameter of the second processing gas flow path 60 located inside the dopant target 15.

[0109] The configurations of the buffer chamber, the target's processing gas flow path, and the connecting pipe in the first processing gas supply unit 16 and the second processing gas supply unit 17 may also be applied when supplying other processing gases to other targets. That is, the substrate processing apparatus comprises a chamber, a substrate support unit disposed within the chamber and including a substrate support surface, a processing gas supply unit configured to supply processing gas toward the substrate support surface, and a target disposed above the substrate support surface of the substrate support unit, wherein the surface of the target is arranged to follow the flow of the processing gas and is configured to release sputtered particles from the surface of the target by ions in the plasma generated from the processing gas, and the processing gas supply unit has a buffer chamber, a processing gas flow path disposed inside the target, and a connecting pipe connecting the buffer chamber and the processing gas flow path, the diameter of the flow path of the connecting pipe may be smaller than the diameter of the processing gas flow path. Furthermore, the targets may be arranged in multiple locations, and the processing gas supply unit may have a buffer chamber, multiple processing gas flow paths arranged inside each of the multiple targets, and multiple connecting pipes connecting the buffer chamber and each of the multiple processing gas flow paths.

[0110] Embodiments of this disclosure further include the following embodiments:

[0111] (Note 1) A substrate processing apparatus comprising: a chamber; a substrate support portion disposed within the chamber and including a substrate support surface; a first processing gas supply portion configured to supply a first processing gas toward the substrate support surface; a second processing gas supply portion configured to supply a second processing gas toward the substrate support surface; a raw material target disposed above the substrate support surface of the substrate support portion and containing raw materials for a compound semiconductor, wherein the surface of the raw material target is arranged to follow the flow of the first processing gas, and is configured to release sputtered raw material particles from the surface of the raw material target by ions in a plasma generated from the first processing gas; and a dopant target disposed above the substrate support surface of the substrate support portion and containing a dopant for a compound semiconductor, wherein the surface of the dopant target is arranged to follow the flow of the second processing gas, and is configured to release sputtered dopant particles from the surface of the dopant target by ions in a plasma generated from the second processing gas.

[0112] (Note 2) The substrate processing apparatus according to Note 1, further comprising: a first flow rate adjustment unit configured to adjust the flow rate of the first processing gas; and a second flow rate adjustment unit configured to adjust the flow rate of the second processing gas.

[0113] (Note 3) The substrate processing apparatus according to Note 1 or 2, further comprising: a first power supply configured to generate plasma from the first processing gas and supply power to the raw material target for releasing sputtered raw material particles from the surface of the raw material target by ions in the plasma; and a second power supply configured to generate plasma from the second processing gas and supply power to the dopant target for releasing dopant sputtered particles from the surface of the dopant target by ions in the plasma.

[0114] (Appendix 4) The substrate processing apparatus according to any one of the appendices 1 to 3, further comprising a rotating part configured to rotate the substrate support part.

[0115] (Note 5) The substrate processing apparatus according to any one of Notes 1 to 4, further comprising a rectifying gas supply unit configured to supply a rectifying gas into the chamber, thereby rectifying the first processing gas that has passed over the surface of the raw material target and the second processing gas that has passed over the surface of the dopant target in a direction toward the substrate support surface.

[0116] (Note 6) The substrate processing apparatus according to any one of Notes 1 to 5, further comprising an exhaust unit configured to exhaust gas from within the chamber through the space between the substrate support and the side wall of the chamber.

[0117] (Note 7) The substrate processing apparatus according to any one of Notes 1 to 6, wherein the surface of the raw material target and the surface of the dopant target are arranged perpendicular to the substrate support surface.

[0118] (Note 8) The substrate processing apparatus according to any one of Notes 1 to 7, wherein the raw material target has a cylindrical shape and the first processing gas is configured to pass inside the cylindrical shape of the raw material target.

[0119] (Note 9) The substrate processing apparatus according to any one of Notes 1 to 8, wherein the dopant target has a cylindrical shape and the second processing gas is configured to pass inside the cylindrical shape of the dopant target.

[0120] (Note 10) The substrate processing apparatus according to any one of Notes 1 to 9, wherein the raw material target comprises a raw material for the compound semiconductor selected from the group consisting of aluminum, gallium, indium, aluminum nitride, gallium nitride, and indium nitride, and the dopant target comprises a dopant for the compound semiconductor selected from the group consisting of magnesium and silicon.

[0121] (Note 11) The substrate processing apparatus according to any one of Notes 1 to 10, wherein the first processing gas contains nitrogen gas, and the second processing gas does not contain nitrogen gas.

[0122] (Note 12) The substrate processing apparatus according to any one of Notes 1 to 11, wherein the first processing gas and the second processing gas include argon gas.

[0123] (Note 13) The substrate processing apparatus according to any one of Notes 1 to 12, wherein a plurality of raw material targets are arranged, and the plurality of raw material targets are arranged in a first region above the substrate support surface and in a second region outside the first region above the substrate support surface.

[0124] (Note 14) The substrate processing apparatus according to Note 13, wherein the flow rate of the first processing gas flowing over the surface of the raw material target in the first region and the flow rate of the first processing gas flowing over the surface of the raw material target in the second region are individually adjustable.

[0125] (Note 15) The substrate processing apparatus according to Note 13 or 14, wherein the plurality of raw material targets include raw material targets in which the raw materials are different from each other.

[0126] (Note 16) The substrate processing apparatus according to any one of Notes 13 to 15, wherein a plurality of dopant targets are arranged, and the plurality of dopant targets are arranged in the first region and the second region, respectively.

[0127] (Note 17) The substrate processing apparatus according to Note 16, wherein the flow rate of the second processing gas flowing over the surface of the dopant target in the first region and the flow rate of the second processing gas flowing over the surface of the dopant target in the second region are individually adjustable.

[0128] (Note 18) The substrate processing apparatus according to Note 16 or 17, wherein the plurality of dopant targets include dopant targets in which the dopants are different from each other.

[0129] (Note 19) The substrate processing apparatus according to any one of Notes 1 to 18, wherein the first processing gas supply unit comprises a first buffer chamber, a first processing gas flow path disposed inside the raw material target, and a first connecting pipe connecting the first buffer chamber and the first processing gas flow path, and the flow path diameter of the first connecting pipe is smaller than the diameter of the first processing gas flow path.

[0130] (Note 20) The substrate processing apparatus according to Note 19, wherein a plurality of raw material targets are arranged, and the first processing gas supply unit has a first buffer chamber, a plurality of first processing gas flow paths arranged inside each of the plurality of raw material targets, and a plurality of first connecting pipes connecting the first buffer chamber and each of the plurality of first processing gas flow paths.

[0131] (Note 21) The substrate processing apparatus according to any one of Notes 1 to 20, wherein the second processing gas supply unit comprises a second buffer chamber, a second processing gas flow path disposed inside the dopant target, and a second connecting pipe connecting the second buffer chamber and the second processing gas flow path, and the flow path diameter of the second connecting pipe is smaller than the diameter of the second processing gas flow path.

[0132] (Note 22) The substrate processing apparatus according to Note 21, wherein a plurality of dopant targets are arranged, and the second processing gas supply unit has a second buffer chamber, a plurality of second processing gas flow paths arranged inside each of the plurality of dopant targets, and a plurality of second connecting pipes connecting the second buffer chamber and each of the plurality of second processing gas flow paths.

[0133] (Note 23) A substrate processing method comprising: (a) the step of providing a substrate on a substrate support portion in a chamber; and (b) the step of supplying a first processing gas and a second processing gas to the substrate on the substrate support portion to form a compound semiconductor film on the substrate, wherein (b) includes: (b-1) flowing the first processing gas along the surface of a raw material target, using ions in the plasma generated from the first processing gas to release raw material sputtered particles from the surface of the raw material target, and supplying the first processing gas containing the raw material sputtered particles toward the substrate; and (b-2) flowing the second processing gas along the surface of a dopant target, using ions in the plasma generated from the second processing gas to release dopant sputtered particles from the surface of the dopant target, and supplying the second processing gas containing the dopant sputtered particles toward the substrate.

[0134] (Note 24) The substrate processing method according to Note 23, wherein the raw material target comprises a raw material for a compound semiconductor selected from the group consisting of aluminum, gallium, indium, aluminum nitride, gallium nitride, and indium nitride, the dopant target comprises a compound semiconductor dopant selected from the group consisting of magnesium and silicon, the first processing gas comprises nitrogen gas and argon gas, and the second processing gas comprises argon gas and does not contain nitrogen gas.

[0135] The embodiments described above are for illustrative purposes only and are not intended to limit the scope of this disclosure. The embodiments described above can be modified in various ways without departing from the scope and spirit of this disclosure. For example, some components of one embodiment can be added to other embodiments, or some components of one embodiment can be replaced with corresponding components of other embodiments.

[0136] 1...Substrate processing apparatus, 10...Chamber, 11...Substrate support section, 11a...Substrate support surface, 12...Rotating section, 13...Gas introduction head, 14...Raw material target, 15...Dopant target, 16...First processing gas supply section, 17...Second processing gas supply section, 18...First power supply, 19...Second power supply, 20...Rectifying gas supply section, 21...Exhaust section, 22...Liner, 23...Control section, W...Substrate

Claims

Chamber and, Displaced within the chamber, a substrate support portion including a substrate support surface, A first processing gas supply unit configured to supply a first processing gas toward the substrate support surface, A second processing gas supply unit configured to supply a second processing gas toward the substrate support surface, A raw material target is disposed above the substrate support surface of the substrate support portion and contains raw materials for a compound semiconductor, wherein the surface of the raw material target is positioned along the flow of the first processing gas, and is configured to release sputtered raw material particles from the surface of the raw material target by ions in the plasma generated from the first processing gas, A substrate processing apparatus comprising: a dopant target disposed above the substrate support surface of the substrate support portion, comprising a compound semiconductor dopant, wherein the surface of the dopant target is positioned along the flow of the second processing gas, and is configured to release dopant sputtered particles from the surface of the dopant target by ions in the plasma generated from the second processing gas. 　 A first flow rate adjustment unit configured to adjust the flow rate of the first processing gas, The substrate processing apparatus according to claim 1, further comprising a second flow rate adjustment unit configured to adjust the flow rate of the second processing gas. 　 A first power supply configured to generate plasma from the first processing gas and supply power to the raw material target to cause sputtered raw material particles to be ejected from the surface of the raw material target by ions in the plasma, The substrate processing apparatus according to claim 1, further comprising: a second power supply configured to generate plasma from the second processing gas and supply power to the dopant target to cause dopant sputtered particles to be emitted from the surface of the dopant target by ions in the plasma. 　 The substrate processing apparatus according to claim 1, further comprising a rotating part configured to rotate the substrate support part. 　 The substrate processing apparatus according to claim 1, further comprising a rectifying gas supply unit configured to supply a rectifying gas into the chamber, thereby rectifying the first processing gas that has passed over the surface of the raw material target and the second processing gas that has passed over the surface of the dopant target in a direction toward the substrate support surface. 　 The substrate processing apparatus according to claim 1, further comprising an exhaust unit configured to exhaust gas from within the chamber through the space between the substrate support and the side wall of the chamber. 　 The substrate processing apparatus according to claim 1, wherein the surface of the raw material target and the surface of the dopant target are arranged perpendicular to the substrate support surface. 　 The substrate processing apparatus according to claim 1, wherein the raw material target has a cylindrical shape, and the first processing gas is configured to pass inside the cylindrical shape of the raw material target. 　 The substrate processing apparatus according to claim 1, wherein the dopant target has a cylindrical shape, and the second processing gas is configured to pass inside the cylindrical shape of the dopant target. 　 The raw material target includes the raw material for the compound semiconductor selected from the group consisting of aluminum, gallium, indium, aluminum nitride, gallium nitride, and indium nitride. The substrate processing apparatus according to claim 1, wherein the dopant target comprises a compound semiconductor dopant selected from the group consisting of magnesium and silicon. 　 The first processing gas contains nitrogen gas, The substrate processing apparatus according to claim 10, wherein the second processing gas does not contain nitrogen gas. 　 The substrate processing apparatus according to claim 11, wherein the first processing gas and the second processing gas include argon gas. 　 Multiple raw material targets are arranged, The substrate processing apparatus according to claim 1, wherein the plurality of raw material targets are arranged in a first region above the substrate support surface and in a second region outside the first region above the substrate support surface. 　 The substrate processing apparatus according to claim 13, wherein the flow rate of the first processing gas flowing over the surface of the raw material target in the first region and the flow rate of the first processing gas flowing over the surface of the raw material target in the second region are individually adjustable. 　 The substrate processing apparatus according to claim 13, wherein the plurality of raw material targets include raw material targets in which the raw materials are different from each other. 　 The US dopant targets are arranged in multiple locations. The substrate processing apparatus according to claim 13, wherein the plurality of dopant targets are arranged in the first region and the second region, respectively. 　 The substrate processing apparatus according to claim 16, wherein the flow rate of the second processing gas flowing over the surface of the dopant target in the first region and the flow rate of the second processing gas flowing over the surface of the dopant target in the second region are individually adjustable. 　 The substrate processing apparatus according to claim 16, wherein the plurality of dopant targets include dopant targets in which the dopants are different from each other. 　 The first processing gas supply unit includes a first buffer chamber, a first processing gas flow path located inside the raw material target, and a first connecting pipe connecting the first buffer chamber and the first processing gas flow path. The substrate processing apparatus according to claim 1, wherein the diameter of the flow path of the first connecting pipe is smaller than the diameter of the first processing gas flow path. 　 Multiple raw material targets are arranged, The substrate processing apparatus according to claim 19, wherein the first processing gas supply unit comprises a first buffer chamber, a plurality of first processing gas flow paths arranged inside each of the plurality of raw material targets, and a plurality of first connecting pipes connecting the first buffer chamber and each of the plurality of first processing gas flow paths. 　 The second processing gas supply unit comprises a second buffer chamber, a second processing gas flow path located inside the dopant target, and a second connecting pipe connecting the second buffer chamber and the second processing gas flow path. The substrate processing apparatus according to claim 1, wherein the diameter of the flow path of the second connecting pipe is smaller than the diameter of the second processing gas flow path. 　 The US dopant targets are arranged in multiple locations. The substrate processing apparatus according to claim 21, wherein the second processing gas supply unit comprises the second buffer chamber, a plurality of second processing gas flow paths disposed inside each of the plurality of dopant targets, and a plurality of second connecting pipes connecting the second buffer chamber and each of the plurality of second processing gas flow paths. (a) A step of providing a substrate on a substrate support portion inside a chamber, (b) A step of supplying a first processing gas and a second processing gas to the substrate on the substrate support portion to form a compound semiconductor film on the substrate, The above (b) is, (b-1) Flowing the first processing gas along the surface of the raw material target, using ions in the plasma generated from the first processing gas to release raw material sputtered particles from the surface of the raw material target, and supplying the first processing gas containing the raw material sputtered particles toward the substrate, and (b-2) A substrate processing method comprising flowing the second processing gas along the surface of a dopant target, using ions in a plasma generated from the second processing gas to release dopant sputtered particles from the surface of the dopant target, and supplying the second processing gas containing the dopant sputtered particles toward the substrate. 　 The raw material target includes a compound semiconductor raw material selected from the group consisting of aluminum, gallium, indium, aluminum nitride, gallium nitride, and indium nitride. The dopant target comprises a compound semiconductor dopant selected from the group consisting of magnesium and silicon. The first processing gas includes nitrogen gas and argon gas. The substrate processing method according to claim 23, wherein the second processing gas includes argon gas but does not include nitrogen gas.

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