Substrate treatment device and substrate treatment method
The substrate processing apparatus addresses the high cost and hazardous nature of chemical vapor deposition by using a rotating substrate support, targets, and gas rectification to form compound semiconductor films like 4H-SiC efficiently and safely, reducing costs and improving safety.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- TOKYO ELECTRON LTD
- Filing Date
- 2026-01-07
- Publication Date
- 2026-07-23
AI Technical Summary
The high cost and hazardous nature of chemical vapor deposition methods for forming compound semiconductor films, such as 4H-SiC, due to the use of dangerous gases like silane and hydrogen chloride, necessitate the development of a more economical and safer alternative.
A substrate processing apparatus and method utilizing a chamber with a substrate support, rotating mechanism, processing gas supply, targets for sputtering, gas introduction head for rectification, heaters for temperature control, and cooling units to form compound semiconductor films efficiently and safely, employing plasma-generated ions for sputtered particle deposition.
Enables the deposition of compound semiconductor films like 4H-SiC at lower costs and with reduced hazardous gas usage, improving safety and operational efficiency.
Smart Images
Figure JP2026000197_23072026_PF_FP_ABST
Abstract
Description
Substrate Processing Apparatus and Substrate Processing Method
[0007] ,
[0001] An exemplary embodiment of the present disclosure relates to a substrate processing apparatus and a substrate processing method.
[0002] As a semiconductor material for power devices, compound semiconductors such as 4H-SiC are used. When forming a film of such a compound semiconductor on a substrate, a chemical vapor deposition method (CVD) has been conventionally used (see Patent Document 1).
[0003] Japanese Patent No. 7440666
[0004] In film formation using the chemical vapor deposition method (CVD), a large amount of highly dangerous gases such as silane, hydrogen, and hydrogen chloride are used, and many gas detection systems and exhaust gas treatment systems are required, resulting in high equipment costs and running costs.
[0005] The present disclosure provides a technique capable of forming a film such as a compound semiconductor on a substrate at a low cost.
[0006] A substrate processing apparatus according to an exemplary embodiment of the present disclosure includes a chamber, a substrate support portion disposed at a lower portion within the chamber and including a substrate support surface, a rotation portion configured to rotate the substrate support portion, a processing gas supply system configured to supply a processing gas toward the substrate support surface, a plurality of targets disposed above the substrate support portion, wherein surfaces of each of the plurality of targets are disposed along a flow of the processing gas and are configured to emit sputter particles from surfaces of each of the plurality of targets by ions in plasma generated from the processing gas, a gas introduction head disposed above the substrate support portion and configured to supply a rectifying gas into the chamber to rectify the processing gas passing through surfaces of each of the plurality of targets in a direction toward the substrate support surface, a first heater disposed below the substrate support surface of the substrate support portion and configured to heat a back surface side of the substrate on the substrate support surface, and a second heater disposed on an outer periphery of a space formed between the substrate support portion and the plurality of targets and configured to heat the space and a surface side of the substrate on the substrate support surface.
[0007] According to one exemplary embodiment of the present disclosure, a technology can be provided that enables the deposition of films such as compound semiconductors onto a substrate at low cost.
[0008] This is a diagram illustrating an example configuration of a substrate processing apparatus. This is a bottom view of the gas introduction head illustrating an example arrangement of the first raw material target, the second raw material target, and the dopant target. This is a diagram illustrating an example configuration of the cooling section. This is a diagram illustrating an example flowchart of a substrate processing method. This is a diagram illustrating an example of the behavior of sputtered particles on the substrate surface. This is a bottom view of the gas introduction head illustrating another example configuration of the first raw material target, the second raw material target, and the dopant target.
[0009] The embodiments of this disclosure are described below.
[0010] In one exemplary embodiment, a substrate processing apparatus is provided, comprising: a chamber; a substrate support portion located in the lower part of the chamber and including a substrate support surface; a rotating portion configured to rotate the substrate support portion; a processing gas supply system configured to supply processing gas toward the substrate support surface; a plurality of targets located above the substrate support portion, each of which has a surface positioned along the flow of processing gas and configured to release sputtered particles from each of the targets by ions in the plasma generated from the processing gas; a gas introduction head located above the substrate support portion and configured to supply a rectifying gas into the chamber to rectify the processing gas that has passed through each of the targets toward the substrate support surface; a first heater located below the substrate support surface of the substrate support portion and configured to heat the back side of the substrate on the substrate support surface; and a second heater located on the outer periphery of the space formed between the substrate support portion and the plurality of targets and configured to heat the space and the front side of the substrate on the substrate support surface.
[0011] In one exemplary embodiment, the substrate processing apparatus further comprises a cooling unit configured to cool a plurality of targets.
[0012] In one exemplary embodiment, the processing gas supply system includes a first processing gas supply unit configured to supply a first processing gas as a processing gas toward a substrate support surface, and the plurality of targets include a raw material target containing raw materials for a compound semiconductor, wherein the surface of the raw material target is positioned along the flow of the first processing gas, and the raw material sputtered particles are ejected from the surface of the raw material target by ions in a plasma generated from the first processing gas.
[0013] In one exemplary embodiment, the processing gas supply system further comprises a second processing gas supply unit configured to supply a second processing gas as a processing gas toward a substrate support surface, and the plurality of targets further comprises dopant targets containing compound semiconductor dopants, wherein the surface of the dopant targets is positioned along a flow of the second processing gas, and dopant sputtered particles are emitted from the surface of the dopant targets by ions in a plasma generated from the second processing gas.
[0014] In one exemplary embodiment, the raw material targets are arranged in a plurality, and the plurality of raw material targets include a first raw material target containing carbon and a second raw material target containing silicon, and the dopant target includes a dopant target containing aluminum.
[0015] In one exemplary embodiment, the raw material target includes a raw material target containing silicon carbide, and the dopant target includes a dopant target containing aluminum.
[0016] In one exemplary embodiment, the gas introduction head is configured to supply a rectifying gas containing a dopant gas.
[0017] In one exemplary embodiment, a plurality of raw material targets are arranged, and the plurality of raw material targets include a first raw material target containing carbon and a second raw material target containing silicon, and the dopant gas includes nitrogen gas.
[0018] In one exemplary embodiment, the raw material target includes a raw material target containing silicon carbide, and the dopant gas includes nitrogen gas.
[0019] In one exemplary embodiment, the surface of each of the multiple targets is positioned perpendicular to the substrate support surface.
[0020] In one exemplary embodiment, each of the multiple targets has a cylindrical shape, and the processing gas is configured to pass inside the cylindrical shape of the target.
[0021] In one exemplary embodiment, the gas introduction head has a rectifying gas supply port that supplies rectifying gas toward the substrate support surface.
[0022] In one exemplary embodiment, the gas introduction head further includes a rectifying gas supply port that supplies rectifying gas toward the outside of the substrate support surface.
[0023] In one exemplary embodiment, the substrate processing apparatus further comprises a liner located outside the space formed between the substrate support and the plurality of targets, and inside the side wall of the chamber.
[0024] In one exemplary embodiment, the second heater is positioned between the liner and the side wall of the chamber.
[0025] In one exemplary embodiment, the cooling unit further comprises a plurality of target electrodes, each of which is positioned to supply power to each of the plurality of targets, and the cooling unit has a coolant flow path positioned in each of the plurality of target electrodes.
[0026] In one exemplary embodiment, a substrate processing method is provided, comprising the steps of (a) providing a substrate on a substrate support, and (b) rotating the substrate support while supplying a processing gas to the substrate on the substrate support to form a film on the substrate, wherein (b) includes (b-1) flowing the processing gas along the surface of each of a plurality of targets, using ions in the plasma generated from the processing gas to release sputtered particles from the surface of each of the plurality of targets, and causing the processing gas containing the sputtered particles to flow out toward the substrate from each of the plurality of targets' processing gas supply ports, (b-2) rectifying the processing gas that has flowed out from each of the plurality of targets' processing gas supply ports toward the substrate using a rectifying gas, (b-3) heating the back side of the substrate on the substrate support with a first heater, and (b-4) heating the space between the substrate support and the plurality of targets and the front side of the substrate on the substrate support surface with a second heater.
[0027] In one exemplary embodiment, (b) further includes (b-5) cooling the plurality of targets by a cooling unit.
[0028] In one exemplary embodiment, (b-1) includes (b-1-1) flowing a first processing gas as a processing gas along the surface of a plurality of target material targets, using ions in the plasma generated from the first processing gas to release sputtered raw material particles from the surface of the target material, and flowing the first processing gas containing the sputtered raw material particles out of the processing gas supply port toward the substrate, and (b-1-2) flowing a second processing gas as a processing gas along the surface of a plurality of target dopant targets, using ions in the plasma generated from the second processing gas to release sputtered dopant particles from the surface of the target dopant, and flowing the second processing gas containing the sputtered dopant particles out of the processing gas supply port toward the substrate.
[0029] In one exemplary embodiment, (b-1) includes flowing a processing gas along the surface of a plurality of raw material targets, using ions in the plasma generated from the processing gas to release raw material sputtered particles from the surface of the raw material targets, and flowing the processing gas containing the raw material sputtered particles out from the processing gas supply port toward the substrate, and (b-2) includes supplying a rectifying gas containing a dopant gas toward the substrate.
[0030] Hereinafter, each embodiment of this disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are denoted by the same reference numeral, and redundant explanations are omitted. Unless otherwise specified, positional relationships such as top, bottom, left, and right will be described based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not represent actual ratios, and actual ratios are not limited to those shown.
[0031] <Example of a Substrate Processing Apparatus> Figure 1 is a diagram illustrating an example of the configuration of a substrate processing apparatus 1. In one embodiment, the substrate processing apparatus 1 is a film deposition apparatus for depositing a film on a substrate. In one embodiment, the substrate processing apparatus 1 is a sputtering apparatus for sputtering a substrate. The substrate processing apparatus 1 is an apparatus for depositing a compound semiconductor film on a substrate. In one embodiment, the compound semiconductor film to be deposited is a SiC film such as a 4H-SiC film.
[0032] In one embodiment, the substrate processing apparatus 1 includes a chamber 10, a substrate support section 11, a rotating section 12, a gas introduction head (shower head) 13, a first raw material target 14, a second raw material target 15, a dopant target 16, a processing gas supply system 30, a first power supply 20, a second power supply 21, a third power supply 22, a first heater 23, a second heater 24, a cooling section 25, a liner 26, an exhaust section 27, and a control section 28.
[0033] The chamber 10 is configured to form a space (processing space) 150 inside. The substrate support 11 is placed inside the chamber 10. The substrate support 11 is placed at the bottom of the space 150.
[0034] The substrate support portion 11 has a substrate support surface 11a on its upper surface that supports the substrate W. In one embodiment, the substrate support surface 11a is a substrate-shaped recess formed on the upper surface of the substrate support portion 11. The substrate support portion 11 may have a mechanism for holding the substrate W. Alternatively, the substrate support surface 11a may be configured to support only the outer periphery of the substrate W. In this case, the substrate support surface 11a may be formed to have a through hole that penetrates the central part of the recess, leaving the outer periphery of the recess untouched. By having a through hole in the central part of the recess excluding the outer periphery of the recess, the back surface of the substrate W can be exposed to the first heater 23, except for the outer periphery of the substrate W, and the first heater 23 and the back surface of the substrate W can be directly opposed to each other.
[0035] The rotating unit 12 is configured to rotate the substrate support unit 11 around its central axis. The rotating unit 12 can rotate the substrate support unit 11 at 300 rpm or more. The rotating unit 12 has a motor or the like for rotating the substrate support unit 11.
[0036] The gas introduction head 13 is positioned at the top of the chamber 10 above the substrate support portion 11. The gas introduction head 13 has a disc shape with thickness in the vertical direction. The gas introduction head 13 has a larger diameter than the substrate support portion 11. The gas introduction head 13 is made of an insulating material.
[0037] The first raw material target 14 is positioned above the substrate support surface 11a of the substrate support section 11. The first raw material target 14 is positioned inside the gas introduction head 13 and is supported by the gas introduction head 13.
[0038] In one embodiment, the first raw material target 14 has a cylindrical shape. The first raw material target 14 is positioned to penetrate the gas introduction head 13 vertically. The first raw material target 14 is positioned so that its central axis is oriented vertically, and the inner surface 14a of the first raw material target 14 is positioned perpendicular to the substrate support surface 11a. The first raw material target 14 forms a first processing gas flow path 50 inside its cylindrical shape. That is, the first raw material target 14 has a tubular surface 14a that forms the first processing gas flow path 50, and the surface 14a is positioned to follow the flow of the first processing gas flowing through the first processing gas flow path 50.
[0039] The first raw material target 14 includes raw materials for a compound semiconductor to be formed on the substrate. When forming a 4H-SiC (silicon carbide) film, which is a compound semiconductor, on the substrate, the first raw material target 14 includes, for example, silicon raw materials.
[0040] The second raw material target 15 is positioned above the substrate support surface 11a of the substrate support section 11. The second raw material target 15 is positioned inside the gas introduction head 13 and is supported by the gas introduction head 13.
[0041] In one embodiment, the second raw material target 15 has a cylindrical shape. The second raw material target 15 is positioned to penetrate the gas introduction head 13 vertically. The second raw material target 15 is positioned so that its central axis is oriented vertically, and the inner surface 15a of the second raw material target 15 is positioned perpendicular to the substrate support surface 11a. The second raw material target 15 forms a second processing gas flow path 60 inside its cylindrical shape. That is, the second raw material target 15 has a tubular surface 15a that forms the second processing gas flow path 60, and the surface 15a is positioned to follow the flow of the second processing gas flowing through the second processing gas flow path 60.
[0042] The second raw material target 15 includes raw materials for a compound semiconductor to be formed on the substrate. When forming a 4H-SiC (silicon carbide) film, which is a compound semiconductor, on the substrate, the second raw material target 15 includes, for example, a carbon raw material.
[0043] The dopant target 16 is disposed above the substrate support surface 11a of the substrate support portion 11. The dopant target 16 is disposed inside the gas introduction head 13 and supported by the gas introduction head 13.
[0044] In one embodiment, the dopant target 16 has a cylindrical shape. The dopant target 16 is disposed so as to penetrate the gas introduction head 13 vertically. The dopant target 16 is disposed such that its central axis faces in the vertical direction, and the inner surface 16a of the dopant target 16 is disposed perpendicular to the substrate support surface 11a. The dopant target 16 forms a third processing gas flow path 70 inside the cylindrical shape. That is, the dopant target 16 has a tubular surface 16a that forms the third processing gas flow path 70, and the surface 16a is disposed along the flow of the third processing gas flowing through the third processing gas flow path 70.
[0045] In one embodiment, the dopant target 16 contains a dopant to be implanted into a compound semiconductor formed on a substrate. When forming a 4H-SiC film (silicon carbide) film, which is a compound semiconductor, on the substrate, the dopant target 16 contains, for example, an aluminum dopant (p-type dopant).
[0046] As shown in FIG. 2, the first raw material target 14, the second raw material target 15, and the dopant target 16 are disposed in the plane of the gas introduction head 13. The number of each of the first raw material target 14, the second raw material target 15, and the dopant target 16 is not limited to one, and may be two or more.
[0047] In one embodiment, as shown in FIG. 1, the processing gas supply system 30 includes a first processing gas supply unit 17, a second processing gas supply unit 18, and a third processing gas supply unit 19.
[0048] The first process gas supply unit 17 includes a first process gas flow path 50 and a first process gas supply port 51. The first process gas flow path 50 is formed inside the surface 14a of the first raw material target 14. The first process gas flow path 50 extends in the vertical direction. The first process gas supply port 51 opens at the lower end of the first process gas flow path 50. The first process gas supply port 51 faces the substrate support surface 11a.
[0049] The first process gas flow path 50 is connected to a first process gas supply system 80 via a first process gas introduction pipe 53. The first process gas supply system 80 is configured to supply a first process gas to the first process gas flow path 50. The first process gas supply system 80 has a gas source and a gas flow controller. The first process gas supply system 80 may be configured to adjust the first process gas flowing out from the first process gas flow path 50 to a first flow rate. The first process gas may contain argon gas and / or hydrogen gas as a carrier gas. The first process gas may contain hydrogen chloride gas as an assist gas for assisting film formation.
[0050] The second process gas supply unit 18 includes a second process gas flow path 60 and a second process gas supply port 61. The second process gas flow path 60 is formed inside the surface 15a of the second raw material target 15. The second process gas supply port 61 opens at the lower end of the second process gas flow path 60. The second process gas supply port 61 faces the substrate support surface 11a.
[0051] The second processing gas flow path 60 is connected to the second processing gas supply system 90 via the second processing gas introduction pipe 63. The second processing gas supply system 90 is configured to supply the second processing gas to the second processing gas flow path 60. The second processing gas supply system 90 includes a gas source and a gas flow rate controller. The second processing gas supply system 90 may be configured to adjust the flow rate of the second processing gas flowing out of the second processing gas inlet 61 to a second flow rate. The second flow rate may be different from the first flow rate. The second processing gas may include argon gas and / or hydrogen gas as a carrier gas. The second processing gas may include hydrogen chloride gas as an assist gas to assist in film formation. The second processing gas may contain a different gas from the first processing gas, or it may contain the same gas.
[0052] The third processing gas supply unit 19 has a third processing gas flow path 70 and a third processing gas supply port 71. The third processing gas flow path 70 is formed inside the surface 16a of the dopant target 16. The third processing gas supply port 71 opens at the lower end of the third processing gas flow path 70. The third processing gas supply port 71 faces the substrate support surface 11a.
[0053] The third processing gas flow path 70 is connected to the third processing gas supply system 100 via the third processing gas introduction pipe 73. The third processing gas supply system 100 is configured to supply the third processing gas to the third processing gas flow path 70. The third processing gas supply system 100 includes a gas source and a gas flow rate controller. The third processing gas supply system 100 may be configured to adjust the flow rate of the third processing gas flowing out of the third processing gas inlet 71 to a third flow rate. The third flow rate may be different from the first and second flow rates. The third processing gas may include argon gas and / or hydrogen gas as a carrier gas.
[0054] The first power supply 20 is electrically connected to the target electrode 54 of the first raw material target 14. In one embodiment, the first power supply 20 supplies first power to the first raw material target 14, thereby generating plasma from the first processing gas flowing inside the first processing gas channel 50, causing ions in the plasma to collide with the surface 14a of the first raw material target 14, and releasing sputtered raw material particles from the first raw material target 14.
[0055] In one embodiment, the first power supply 20 includes a DC power supply and / or an RF power supply. The DC power supply is configured to supply a DC signal to the target electrode 54 of the first raw material target 14. The RF power supply is configured to supply an RF signal (high-frequency signal) to the target electrode 54 of the first raw material target 14 via a matching circuit (not shown). The DC power supply may include a pulsed DC power supply.
[0056] The second power supply 21 is electrically connected to the target electrode 64 of the second raw material target 15. In one embodiment, the second power supply 21 supplies second power to the second raw material target 15, thereby generating plasma from the second processing gas flowing inside the second processing gas channel 60, causing ions in the plasma to collide with the surface 15a of the second raw material target 15, and releasing sputtered raw material particles from the second raw material target 15.
[0057] In one embodiment, the second power supply 21 includes a DC power supply and / or an RF power supply. The DC power supply is configured to supply a DC signal to the target electrode 64 of the second raw material target 15. The RF power supply is configured to supply an RF signal (high-frequency signal) to the target electrode 64 of the second raw material target 15 via a matching circuit (not shown). The DC power supply may include a pulsed DC power supply.
[0058] The third power supply 22 is electrically connected to the target electrode 74 of the dopant target 16. In one embodiment, the third power supply 22 supplies a third power to the dopant target 16, thereby generating plasma from the third processing gas flowing inside the third processing gas channel 70, causing ions from the plasma to collide with the surface 16a of the dopant target 16, and releasing dopant sputtered particles from the dopant target 16.
[0059] The third power supply 22 includes a DC power supply and / or an RF power supply. The DC power supply is configured to supply a DC signal to the target electrode 74 of the dopant target 16. The RF power supply is configured to supply an RF signal (high-frequency signal) to the target electrode 74 of the dopant target 16 via a matching circuit (not shown). The DC power supply may include a pulsed DC power supply.
[0060] The gas introduction head 13 is configured to supply a rectifying gas into the chamber 10 and rectify the processing gas toward the substrate support surface 11a. The rectifying gas rectifies the first processing gas flowing out from the first processing gas flow path 50, the second processing gas flowing out from the second processing gas flow path 60, and the third processing gas flowing out from the third processing gas flow path 70. The gas introduction head 13 is positioned above the substrate support section 11 and is configured to supply the rectifying gas toward the substrate support section 11. In one embodiment, the gas introduction head 13 has a gas diffusion chamber 120, a gas flow path 121, and a gas supply port 122.
[0061] The gas diffusion chamber 120 is located at the top of the chamber 10. The gas diffusion chamber 120 is located above the gas introduction head 13.
[0062] Multiple gas passages 121 are arranged inside the gas introduction head 13. The multiple gas passages 121 lead to the gas diffusion chamber 120. The gas passages 121 are formed to penetrate the gas introduction head 13 in the vertical direction. In one embodiment, the vertical length of the gas passage 121 is greater than the length of the first raw material target 14, the second raw material target 15, and the dopant target 16. The vertical length of the gas passage 121 may be the same as or less than the length of the first raw material target 14, the second raw material target 15, and the dopant target 16. The gas supply port 122 opens at the lower end of the gas passage 121. The gas supply port 122 opens on the lower surface of the gas introduction head 13.
[0063] As shown in Figure 2, the multiple gas supply ports 122 are arranged near the first processing gas supply port 51, surrounding the first processing gas supply port 51. The multiple gas supply ports 122 are also arranged near the second processing gas supply port 61, surrounding the second processing gas supply port 61. Furthermore, the multiple gas supply ports 122 are arranged near the third processing gas supply port 71, surrounding the third processing gas supply port 71. As shown in Figure 1, some of the multiple gas supply ports 122 are positioned facing the substrate support surface 11a. Other parts of the multiple gas supply ports 122 are positioned not facing the substrate support surface 11a. That is, some of the multiple gas supply ports 122 are arranged to supply rectified gas toward the substrate support surface 11a, while other parts of the multiple gas supply ports 122 are arranged to supply rectified gas toward the area outside the substrate support surface 11a.
[0064] The gas diffusion chamber 120 is connected to at least one gas supply system 130 via a gas introduction pipe 123. The gas supply system 130 includes a gas source and a gas flow rate controller. The gas supply system 130 may be configured to adjust the rectified gas flowing out of the gas flow path 121 to a fourth flow rate. The fourth flow rate may be different from the first, second, and third flow rates. The rectified gas may include argon gas as an inert gas.
[0065] The first heater 23 is positioned below the substrate support surface 11a. The first heater 23 is configured to generate heat when power is supplied and to heat the back side of the substrate W on the substrate support surface 11a. The first heater 23 may be configured to adjust the temperature of the substrate support portion 11 and the substrate W on the substrate support surface 11a to a first target temperature. The first target temperature may be 1000°C or higher.
[0066] The liner 26 is located outside the substrate support portion 11 and inside the side wall 10a of the chamber 10. The liner 26 has a cylindrical shape. The liner 26 extends vertically from near the bottom 10b of the chamber 10 to near the gas introduction head 13. Alternatively, the liner 26 may be divided vertically at a height near the substrate support portion 11, and a vertical drive mechanism (not shown) may be provided in the lower liner to form a transport opening between the upper and lower liner, through which the substrate W may be loaded into and unloaded from the chamber 10.
[0067] The second heater 24 is positioned on the outer periphery of the space 150 formed between the substrate support portion 11 and the gas introduction head 13. The second heater 24 is positioned between the liner 26 and the side wall 10a of the chamber 10. The second heater 24 is configured to generate heat when power is supplied and to heat the space 150 and the surface side of the substrate on the substrate support surface. The second heater 24 may be configured to generate heat when power is supplied and to adjust the temperature of the space 150 to a second target temperature. The second target temperature may be lower than the first target temperature. An insulating material 155 may be placed between the second heater 24 and the side wall 10a of the chamber 10.
[0068] The cooling unit 25 is configured to cool the first raw material target 14, the second raw material target 15, and the third dopant target 16. In one embodiment, as shown in Figure 3, the cooling unit 25 has a refrigerant flow path 160 and a refrigerant supply device 161. The refrigerant flow path 160 is arranged to pass through the target electrode 54 of the first raw material target 14, the target electrode 64 of the second raw material target 15, and the target electrode 74 of the dopant target 16. The refrigerant supply device 161 is configured to supply a refrigerant adjusted to a given temperature to the refrigerant flow path 160. Note that the refrigerant supply device 161 does not need to be equipment attached to the device, but may be equipment such as a circulating water supply in the factory where the device is installed.
[0069] As shown in Figure 1, the exhaust unit 27 is configured to exhaust gas from inside the chamber 10 through the space between the substrate support unit 11 and the side wall 10a of the chamber 10. The exhaust unit 27 has a gas exhaust port 170 and an exhaust system 190.
[0070] The gas exhaust port 170 is provided at the bottom 10b of the chamber 10. One or more gas exhaust ports 170 may be provided around the substrate support portion 11 in a plan view. Multiple gas exhaust ports 170 are arranged at equal intervals around the substrate support portion 11 in a plan view. A baffle plate (not shown) may be provided above the gas exhaust port 170. The baffle plate (not shown) has an annular plate shape so as to surround the outer circumference of the substrate support portion 11. The baffle plate (not shown) has multiple openings that penetrate in the vertical direction. The openings provided in the baffle plate (not shown) may be round holes or radially elongated slits. The gas exhaust port 170 is connected to an exhaust system 190. The exhaust system 190 includes a pressure regulating valve and a vacuum pump. The exhaust system 190 can reduce the pressure of the chamber 10 space 150 to a range of 10 Pa to 5 kPa.
[0071] The control unit 28 processes computer-executable instructions that cause the substrate processing apparatus 1 to perform the various processes described herein. The control unit 28 may be configured to control each element of the substrate processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 28 may be included in the substrate processing apparatus 1. The control unit 28 is implemented, for example, by a computer 2a. The control unit 28 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The functions realized by the processing unit 2a1 described herein may be implemented in a circuit or processing circuit, including a general-purpose processor, an application-specific processor, integrated circuits, ASICs (Application Specific Integrated Circuits), a CPU (Central Processing Unit), a conventional circuit, and / or a combination thereof, programmed to realize the described functions. The processor is considered to be a circuit or processing circuit, including transistors and other circuits. The processor may be a programmed processor that executes a program stored in the storage unit 2a2. This program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the substrate processing device 1 via a communication line such as a LAN (Local Area Network).In this disclosure, circuits, units, and means are hardware programmed to perform or configured to perform the functions described. Such hardware may be any hardware described in this disclosure, or any hardware known to be programmed to perform or execute the functions described. If such hardware is a processor that is considered to be a type of circuit, such circuit, means, or unit is a combination of hardware and software used to constitute such hardware and / or processor.
[0072] <Example of Substrate Processing Method> Figure 4 is a flowchart showing an example of a substrate processing method (hereinafter also referred to as "this processing method") according to one exemplary embodiment. In one embodiment, this processing method includes a step ST1 of providing a substrate W on a substrate support 11, and a step ST2 of supplying a processing gas to the substrate W to form a compound semiconductor film on the substrate W. This processing method is a method of forming a film on a substrate W. This processing method is performed by the substrate processing apparatus 1 shown in Figure 1. The control unit 28 controls each part of the substrate processing apparatus 1 to perform this processing method on the substrate W.
[0073] (Step ST1: Provision of the substrate) In step ST1, as shown in Figure 1, the substrate W is provided into the chamber 10 of the substrate processing apparatus 1. The substrate W is provided on the substrate support surface 11a of the substrate support part 11. The substrate W is placed on the substrate support surface 11a.
[0074] (Step ST2: Substrate film formation process) In step ST2, while rotating the substrate support 11, a first processing gas and a second processing gas are supplied to the substrate W on the substrate support 11 to form a compound semiconductor film on the substrate W.
[0075] In step ST2, the substrate support section 11 (substrate W) is rotated at high speed by the rotating section 12 at a speed of 300 rpm or more, preferably between 300 rpm and 2000 rpm. In addition, the pressure inside the chamber 10 is reduced to a range of 10 Pa to 5 kPa by the exhaust system 190.
[0076] In step ST2, the first heater 23 generates heat due to power supply. The first heater 23 heats the substrate support portion 11 and the back side of the substrate W on the substrate support portion 11. The substrate support portion 11 or the substrate W is adjusted to a first target temperature. The first target temperature may be in the range of 0°C to 2000°C. The first target temperature may be 1000°C or higher.
[0077] In step ST2, the second heater 24 generates heat due to power supply. The second heater 24 heats the space 150 between the substrate support 11 and the gas introduction head 13 and the surface side of the substrate W on the substrate support 11. The space 150 may be adjusted to a second target temperature. The second target temperature may be lower than the first target temperature. The second target temperature may be in the range of 0°C to 2000°C. The second target temperature may be 1600°C or lower.
[0078] In process ST2, the first raw material target 14, the second raw material target 15, and the dopant target 16 are cooled by the cooling unit 25.
[0079] In step ST2, a rectifying gas is supplied into the chamber 10 by the gas introduction head 13. The rectifying gas is supplied from each gas supply port 122 toward the substrate W and its outer periphery through the gas introduction pipe 123, the gas diffusion chamber 120, and each of the multiple gas flow paths 121. In one embodiment, the rectifying gas includes argon gas.
[0080] In step ST2, the first processing gas is supplied onto the substrate W via the first processing gas flow path 50 by the first processing gas supply unit 17. Power is supplied to the first raw material target 14 by the first power supply 20. As a result, plasma is generated from a portion of the first processing gas, and ions in the plasma collide with the surface 14a of the first raw material target 14, thereby releasing the first raw material sputtered particles from the surface 14a of the first raw material target 14. The first processing gas containing the first raw material sputtered particles is released from the first processing gas supply port 51 toward the substrate W on the substrate support surface 11a. In one embodiment, the first raw material sputtered particles are sputtered particles containing silicon.
[0081] The second processing gas is supplied onto the substrate W via the second processing gas flow path 60 by the second processing gas supply unit 18. Power is supplied to the second raw material target 15 by the second power supply 21. As a result, plasma is generated from a portion of the second processing gas, and ions in the plasma collide with the surface 15a of the second raw material target 15, causing the second raw material sputtered particles to be emitted from the surface 15a of the second raw material target 15. The second processing gas containing the second raw material sputtered particles is discharged from the second processing gas supply port 61 toward the substrate W on the substrate support surface 11a. In one embodiment, the second raw material sputtered particles are sputtered particles containing carbon.
[0082] The third processing gas is supplied onto the substrate W via the third processing gas flow path 70 by the third processing gas supply unit 19. Power is supplied to the dopant target 16 by the third power supply 22. As a result, plasma is generated from a portion of the third processing gas, and ions in the plasma collide with the surface 16a of the dopant target 16, causing dopant sputtered particles to be emitted from the surface 16a of the dopant target 16. The third processing gas containing the dopant sputtered particles is discharged from the third processing gas supply port 71 toward the substrate W on the substrate support surface 11a. In one embodiment, the dopant sputtered particles are sputtered particles containing aluminum.
[0083] In step ST2, the rectifying gas flows downward, surrounding the first processing gas containing the first raw material sputtered particles that flowed out from the first processing gas supply port 51, the second processing gas containing the second raw material sputtered particles that flowed out from the second processing gas supply port 61, and the third processing gas containing the dopant sputtered particles that flowed out from the third processing gas supply port 71. The first processing gas, the second processing gas, and the third processing gas are rectified by the rectifying gas, and convection is suppressed as they reach the surface of the substrate W.
[0084] As shown in Figure 5, as the substrate W rotates at a high speed of 300 rpm or more, the first, second, and third processing gases are rectified and reach the substrate W, supplying the first raw material sputtered particles SP1, the second raw material sputtered particles SP2, and the dopant sputtered particles SP3 to the surface of the substrate W. At this time, the high-speed rotation of the substrate W forms a thin, uniform gas boundary layer R on the surface of the substrate W. This thin, uniform gas boundary layer R ensures that the raw material sputtered particles SP1, SP2, and the dopant sputtered particles SP3 are supplied to the surface of the substrate W quickly and uniformly.
[0085] The gas on the surface of the substrate W flows from the center of the substrate W outwards. Also, the rectified gas that flows out from the gas supply port 122 on the outer circumference of the gas introduction head 13 shown in Figure 1 descends through the outer circumference of the first processing gas, the second processing gas, and the third processing gas, as well as the rectified gas that flows out from the gas supply port 122 on the inner circumference of the gas introduction head 13. The gas that flows from the center of the substrate W outwards on the surface of the substrate W and the rectified gas that flows out from the gas supply port 122 on the outer circumference of the gas introduction head 13 merge and are exhausted from the gas exhaust port 170 on the outside of the substrate support part 11.
[0086] In this way, the rectified gas flowing out from the gas introduction head 13 suppresses the convection of the gas containing the raw sputtered particles SP1, SP2 and dopant sputtered particles SP3. In addition, the substrate W is heated from the back side by the first heater 23, and the space 150 between the substrate support 11 and the gas introduction head 13 and the front side of the substrate W are heated by the second heater 24. If the temperature of the space 150 between the substrate support 11 and the gas introduction head 13 is lower than the temperature of the substrate W, the gas that reaches the substrate W will create an upward flow, making convection more likely. By raising the temperature of the space 150 between the substrate support 11 and the gas introduction head 13 with the second heater 24, it is easier to suppress such convection.
[0087] In this way, a gas containing raw material sputtered particles SP1, SP2 and dopant sputtered particles SP3 is supplied to the surface of a high-temperature substrate W, and a film F is formed on the surface of the substrate W. In one embodiment, a 4H-SiC film containing an aluminum p-type dopant is formed on the substrate W.
[0088] Subsequently, the supply of the first processing gas, second processing gas, third processing gas, and rectifying gas is stopped, and the rotation of the substrate support unit 11 is stopped. After that, the substrate W is removed from the substrate processing apparatus 1, and the processing of the substrate is completed.
[0089] According to this exemplary embodiment, the substrate processing apparatus 1 comprises a chamber 10, a substrate support section 11, a rotating section 12, a gas introduction head 13, a plurality of targets (a first raw material target 14, a second raw material target 15, and a dopant target 16), a processing gas supply system 30 (a first processing gas supply section 17, a second processing gas supply section 18, and a third processing gas supply section 19), a first heater 23, a second heater 24, and a cooling section 25. This allows processing gas to be supplied to the substrate W while the substrate W is rotated. The first processing gas from the first processing gas supply section 17 is flowed along the surface 14a of the first raw material target 14, and ions in the plasma generated from the first processing gas are used to release first raw material sputtered particles SP1 from the surface 14a of the first raw material target 14, and the first processing gas containing the first raw material sputtered particles SP1 can be discharged from the first processing gas supply port 51 toward the substrate W. Furthermore, the second processing gas can be flowed along the surface 15a of the second raw material target 15, and ions in the plasma generated from the second processing gas can be used to release second raw material sputtered particles SP2 from the surface 15a of the second raw material target 15, allowing the second processing gas containing the second raw material sputtered particles SP2 to flow out from the second processing gas supply port 61 toward the substrate W. Additionally, the third processing gas can be flowed along the surface 16a of the dopant target 16, and ions in the plasma generated from the third processing gas can be used to release dopant sputtered particles SP3 from the surface 16a of the dopant target 16, allowing the third processing gas containing the dopant sputtered particles SP3 to flow out from the third processing gas supply port 71 toward the substrate W. Furthermore, the processing gases flowing out from each processing gas supply port can be rectified toward the substrate using a rectifying gas. The first heater 23 heats the back side of the substrate W on the substrate support 11, the second heater 24 heats the space 150 between the substrate support 11 and the multiple targets and the front side of the substrate W, and the cooling unit 25 cools the multiple targets. As a result, a compound semiconductor film such as 4H-SiC can be deposited on the substrate at low cost without using chemical vapor deposition (CVD).Furthermore, while hydrogen or hydrogen chloride gas can be used as the processing gas, even in such cases, it is easier to reduce the consumption of hazardous gases compared to chemical vapor deposition (CVD), thus reducing equipment costs, including gas detection systems and exhaust gas treatment systems, as well as running costs.
[0090] According to this exemplary embodiment, the substrate W can be rotated by the rotating unit 12 while a processing gas containing sputtered particles is supplied to the substrate W. This improves the uniformity of the film deposition within the substrate surface.
[0091] According to this exemplary embodiment, the rectified gas supplied from the gas introduction head 13 can rectify the processing gas that has passed through the surface of each of the multiple targets in a direction toward the substrate support surface 11a, thereby suppressing convection of the processing gas and enabling the processing gas to be appropriately supplied to the substrate W.
[0092] According to this exemplary embodiment, the substrate W on the substrate support portion 11 is heated by the first heater 23, while the space 150 between the substrate support portion 11 and the plurality of targets is heated by the second heater 24. This reduces the temperature difference between the vicinity of the substrate and the path from the plurality of targets to the substrate. As a result, convection of the processing gas is suppressed, and the processing gas can be appropriately supplied to the substrate W.
[0093] Since the cooling unit 25 can cool multiple targets 14 to 16, it is possible to suppress excessive temperature increases of the multiple targets 14 to 16 due to heat from the second heater 24.
[0094] The gas introduction head 13 has a gas supply port 122 that supplies rectified gas toward the outside of the substrate support surface 11a, thereby suppressing convection of the processing gas.
[0095] The substrate processing apparatus 1 includes a liner 26 positioned outside the space 150 and inside the side wall 10a of the chamber 10. This prevents reaction products from adhering to the side wall 10a of the chamber 10.
[0096] The second heater 24 is positioned between the liner 26 and the side wall 10a of the chamber 10. This helps to suppress the adhesion of reaction products to the second heater 24.
[0097] The cooling unit 25 has a refrigerant flow path 160 arranged in each of the multiple target electrodes 54, 64, and 74, so that the multiple targets 14 to 16 can be cooled appropriately.
[0098] In the above embodiment, the gas introduction head 13 may be configured to supply a rectifying gas containing a dopant gas. This allows the processing gas containing raw material sputtered particles to be supplied to the substrate W while the rectifying gas containing the dopant gas is supplied to the substrate W. As a result, a compound semiconductor film with dopants from the rectifying gas implanted can be formed on the substrate.
[0099] In one embodiment, the gas introduction head 13 may be able to select between supplying a rectifying gas containing a dopant gas and supplying a rectifying gas without a dopant gas. In this case, the rectifying gas may contain nitrogen gas as a dopant gas (n-type dopant gas). In this example, a processing gas containing raw material sputtered silicon and carbon particles is supplied to the substrate W, while a rectifying gas containing nitrogen n-type dopant gas is supplied to the substrate W. At this time, the supply of the third processing gas to the dopant target 16 and the supply of power to the dopant target 16 are stopped. By doing so, a 4H-SiC film containing nitrogen n-type dopant can be formed on the substrate W. According to one embodiment, the substrate processing apparatus 1 can form both a compound semiconductor film containing a p-type dopant and a compound semiconductor film containing an n-type dopant.
[0100] The number, arrangement, and types of the multiple targets are not limited to the examples above. In one embodiment, there may be two or more of each of the first raw material target 14, the second raw material target 15, and the dopant target 16. The multiple targets may include one type of raw material target whose raw material is silicon carbide (SiC). The multiple targets may include only raw material targets and no dopant targets. In this case, the rectifying gas may contain a dopant gas.
[0101] The number and arrangement of gas flow paths 121 and gas supply ports 122 in the gas introduction head 13 are not limited to the above example.
[0102] As shown in Figure 6, in the above embodiment, some or all of the multiple targets 14 to 16 may be of the opposing plate type, having plates facing each other. In one embodiment, the first raw material target 14 has a first plate 260 and a second plate 261. The first plate 260 and the second plate 261 contain the raw materials for the compound semiconductor to be formed. The first plate 260 and the second plate 261 are arranged inside the gas introduction head 13. The first plate 260 and the second plate 261 are spaced apart from each other, and a first processing gas flow path 50 and a first processing gas supply port 51 are formed between them. The first plate 260 has a first target electrode 260a on its outer surface opposite to the first processing gas flow path 50, and the second plate 261 has a second target electrode 261a on its outer surface opposite to the first processing gas flow path 50. The first target electrode 260a and the second target electrode 261a are electrically connected to the first power supply 20. One or more first raw material targets 14 are arranged in the gas introduction head 13.
[0103] In one embodiment, the second raw material target 15 has a first plate 270 and a second plate 271. The first plate 270 and the second plate 271 contain raw materials for the compound semiconductor to be formed. The first plate 270 and the second plate 271 are arranged inside the gas introduction head 13. The first plate 270 and the second plate 271 are spaced apart from each other, and a second processing gas flow path 60 and a second processing gas supply port 61 are formed between them. The first plate 270 has a first target electrode 270a on its outer surface opposite to the second processing gas flow path 60, and the second plate 271 has a second target electrode 271a on its outer surface opposite to the second processing gas flow path 60. The first target electrode 270a and the second target electrode 271a are electrically connected to a second power supply 21. One or more second raw material targets 15 are arranged in the gas introduction head 13.
[0104] In one embodiment, the dopant target 16 may be of the opposite plate type, having plates facing each other. The dopant target 16 has a first plate 280 and a second plate 281. The first plate 280 and the second plate 281 contain a compound semiconductor dopant to be deposited. The first plate 280 and the second plate 281 are arranged inside the gas introduction head 13. The first plate 280 and the second plate 281 are spaced apart from each other, and a third processing gas channel 70 and a third processing gas supply port 71 are formed between them. The first plate 280 has a first target electrode 280a on its outer surface opposite to the third processing gas channel 70, and the second plate 281 has a second target electrode 281a on its outer surface opposite to the third processing gas channel 70. The first target electrode 280a and the second target electrode 281a are electrically connected to the third power supply 22. One or more dopant targets 16 are arranged in the gas introduction head 13.
[0105] Embodiments of this disclosure further include the following embodiments:
[0106] (Note 1) A substrate processing apparatus comprising: a chamber; a substrate support portion disposed in the lower part of the chamber and including a substrate support surface; a rotating portion configured to rotate the substrate support portion; a processing gas supply system configured to supply processing gas toward the substrate support surface; a plurality of targets disposed above the substrate support portion, each of which has a surface arranged to follow the flow of the processing gas, and configured to emit sputtered particles from each of the multiple targets by ions in the plasma generated from the processing gas; a gas introduction head disposed above the substrate support portion, configured to supply a rectifying gas into the chamber and rectify the processing gas that has passed over each of the multiple targets toward the substrate support surface; a first heater disposed below the substrate support surface of the substrate support portion and configured to heat the back side of the substrate on the substrate support surface; and a second heater disposed on the outer periphery of the space formed between the substrate support portion and the plurality of targets and configured to heat the space and the front side of the substrate on the substrate support surface.
[0107] (Appendix 2) The substrate processing apparatus according to Appendix 1, further comprising a cooling unit configured to cool the plurality of targets.
[0108] (Note 3) The substrate processing apparatus according to Note 1 or 2, wherein the processing gas supply system has a first processing gas supply unit configured to supply a first processing gas as the processing gas toward the substrate support surface, and the plurality of targets are raw material targets containing raw materials for compound semiconductors, the surface of the raw material targets is arranged to follow the flow of the first processing gas, and raw material sputtered particles are emitted from the surface of the raw material targets by ions in the plasma generated from the first processing gas.
[0109] (Note 4) The substrate processing apparatus according to Note 3, wherein the processing gas supply system further comprises a second processing gas supply unit configured to supply a second processing gas as the processing gas toward the substrate support surface, and the plurality of targets are dopant targets containing compound semiconductor dopants, the surface of the dopant targets is arranged along the flow of the second processing gas, and dopant sputtered particles are emitted from the surface of the dopant targets by ions in a plasma generated from the second processing gas.
[0110] (Note 5) The substrate processing apparatus according to Note 4, wherein a plurality of raw material targets are arranged, the plurality of raw material targets include a first raw material target containing carbon and a second raw material target containing silicon, and the dopant target includes a dopant target containing aluminum.
[0111] (Note 6) The substrate processing apparatus according to Note 4, wherein the raw material target includes a raw material target containing silicon carbide, and the dopant target includes a dopant target containing aluminum.
[0112] (Note 7) The substrate processing apparatus according to any one of Notes 1 to 6, wherein the gas introduction head is configured to supply the rectifying gas containing the dopant gas.
[0113] (Note 8) The substrate processing apparatus according to Note 7, wherein a plurality of raw material targets are arranged, and the plurality of raw material targets include a first raw material target containing carbon and a second raw material target containing silicon, and the dopant gas includes nitrogen gas.
[0114] (Note 9) The substrate processing apparatus according to Note 7, wherein the raw material target includes a raw material target containing silicon carbide, and the dopant gas includes nitrogen gas.
[0115] (Note 10) The substrate processing apparatus according to any one of Notes 1 to 9, wherein the surface of each of the plurality of targets is arranged perpendicular to the substrate support surface.
[0116] (Note 11) The substrate processing apparatus according to any one of Notes 1 to 10, wherein each of the plurality of targets has a cylindrical shape and the processing gas is configured to pass inside the cylindrical shape of the target.
[0117] (Note 12) The substrate processing apparatus according to any one of Notes 1 to 11, wherein the gas introduction head has a rectifying gas supply port for supplying the rectifying gas toward the substrate support surface.
[0118] (Note 13) The substrate processing apparatus according to Note 12, wherein the gas introduction head further has a rectifying gas supply port for supplying the rectifying gas toward the outside of the substrate support surface.
[0119] (Note 14) The substrate processing apparatus according to any one of Notes 1 to 13, further comprising a liner located outside the space and inside the side wall of the chamber.
[0120] (Note 15) The substrate processing apparatus according to Note 14, wherein the second heater is disposed between the liner and the side wall of the chamber.
[0121] (Note 16) The substrate processing apparatus according to any one of Notes 2 to 15, further comprising a plurality of target electrodes arranged in each of the plurality of targets and for supplying power to each of the plurality of targets, wherein the cooling unit has a refrigerant flow path arranged in each of the plurality of target electrodes.
[0122] (Note 17) A substrate processing method comprising: (a) the step of providing a substrate on a substrate support; and (b) the step of supplying a processing gas to the substrate on the substrate support while rotating the substrate support to form a film on the substrate, wherein (b) includes: (b-1) flowing the processing gas along the surface of each of a plurality of targets, and using ions in the plasma generated from the processing gas to release sputtered particles from the surface of each of the plurality of targets, and causing the processing gas containing the sputtered particles to flow out from each of the plurality of targets toward the substrate; (b-2) rectifying the processing gas that has flowed out from each of the plurality of targets toward the substrate using a rectifying gas; (b-3) heating the back side of the substrate on the substrate support with a first heater; and (b-4) heating the space between the substrate support and the plurality of targets and the surface side of the substrate on the substrate support with a second heater.
[0123] (Note 18) (b-5) The substrate processing method according to Note 17, further comprising cooling the plurality of targets with a cooling unit.
[0124] (Note 19) The substrate processing method according to Note 17 or 18, wherein (b-1) comprises (b-1-1) flowing a first processing gas as the processing gas along the surface of a raw material target included in the plurality of targets, using ions in the plasma generated from the first processing gas to release raw material sputtered particles from the surface of the raw material target, and flowing the first processing gas containing the raw material sputtered particles out of the processing gas supply port toward the substrate, and (b-1-2) flowing a second processing gas as the processing gas along the surface of a dopant target included in the plurality of targets, using ions in the plasma generated from the second processing gas to release dopant sputtered particles from the surface of the dopant target, and flowing the second processing gas containing the dopant sputtered particles out of the processing gas supply port toward the substrate.
[0125] (Note 20) The substrate processing method according to Note 17 or 18, wherein (b-1) comprises flowing the processing gas along the surface of the raw material targets included in the plurality of targets, using ions in the plasma generated from the processing gas to release raw material sputtered particles from the surface of the raw material targets, and flowing the processing gas containing the raw material sputtered particles out from the processing gas supply port toward the substrate, and (b-2) comprises supplying the rectifying gas containing the dopant gas toward the substrate.
[0126] The embodiments described above are for illustrative purposes only and are not intended to limit the scope of this disclosure. The embodiments described above can be modified in various ways without departing from the scope and spirit of this disclosure. For example, some components of one embodiment can be added to other embodiments, or some components of one embodiment can be replaced with corresponding components of other embodiments.
[0127] 1...Substrate processing apparatus, 10...Chamber, 11...Substrate support section, 11a...Substrate support surface, 12...Rotating section, 13...Gas introduction head, 14...First raw material target, 15...Second raw material target, 16...Dopant target, 17...First processing gas supply section, 18...Second processing gas supply section, 19...Third processing gas supply section, 30...Processing gas supply system, 23...First heater, 24...Second heater, 25...Cooling section, 28...Control unit, W...Substrate
Claims
1. A substrate processing apparatus comprising: a chamber; a substrate support portion disposed in the lower part of the chamber and including a substrate support surface; a rotating portion configured to rotate the substrate support portion; a processing gas supply system configured to supply processing gas toward the substrate support surface; a plurality of targets disposed above the substrate support portion, each of which has a surface positioned along the flow of the processing gas and configured to emit sputtered particles from each of the targets by ions in the plasma generated from the processing gas; a gas introduction head disposed above the substrate support portion and configured to supply a rectifying gas into the chamber and rectify the processing gas that has passed over each of the targets toward the substrate support surface; a first heater disposed below the substrate support surface of the substrate support portion and configured to heat the back side of the substrate on the substrate support surface; and a second heater disposed on the outer periphery of the space formed between the substrate support portion and the plurality of targets and configured to heat the space and the front side of the substrate on the substrate support surface.
2. The substrate processing apparatus according to claim 1, further comprising a cooling unit configured to cool a plurality of targets.
3. The substrate processing apparatus according to claim 1, wherein the processing gas supply system has a first processing gas supply unit configured to supply a first processing gas as the processing gas toward the substrate support surface, and the plurality of targets include a raw material target containing raw materials for a compound semiconductor, wherein the surface of the raw material target is arranged along the flow of the first processing gas, and raw material sputtered particles are emitted from the surface of the raw material target by ions in a plasma generated from the first processing gas.
4. The substrate processing apparatus according to claim 3, wherein the processing gas supply system further comprises a second processing gas supply unit configured to supply a second processing gas as the processing gas toward the substrate support surface, and the plurality of targets further comprises a dopant target comprising a compound semiconductor dopant, wherein the surface of the dopant target is arranged along the flow of the second processing gas, and dopant sputtered particles are emitted from the surface of the dopant target by ions in a plasma generated from the second processing gas.
5. The substrate processing apparatus according to claim 4, wherein a plurality of raw material targets are arranged, the plurality of raw material targets include a first raw material target containing carbon and a second raw material target containing silicon, and the dopant target includes a dopant target containing aluminum.
6. The substrate processing apparatus according to claim 4, wherein the raw material target includes a raw material target containing silicon carbide, and the dopant target includes a dopant target containing aluminum.
7. The substrate processing apparatus according to claim 3 or 4, wherein the gas introduction head is configured to supply the rectifying gas containing the dopant gas.
8. The substrate processing apparatus according to claim 7, wherein a plurality of raw material targets are arranged, the plurality of raw material targets include a first raw material target containing carbon and a second raw material target containing silicon, and the dopant gas includes nitrogen gas.
9. The substrate processing apparatus according to claim 7, wherein the raw material target includes a raw material target containing silicon carbide, and the dopant gas includes nitrogen gas.
10. The substrate processing apparatus according to claim 1, wherein the surface of each of the plurality of targets is arranged perpendicular to the substrate support surface.
11. The substrate processing apparatus according to claim 1, wherein each of the plurality of targets has a cylindrical shape, and the processing gas is configured to pass inside the cylindrical shape of the target.
12. The substrate processing apparatus according to claim 1, wherein the gas introduction head has a rectifying gas supply port for supplying the rectifying gas toward the substrate support surface.
13. The substrate processing apparatus according to claim 12, wherein the gas introduction head further has a rectifying gas supply port for supplying the rectifying gas toward the outside of the substrate support surface.
14. The substrate processing apparatus according to claim 1, further comprising a liner disposed outside the space and inside the side wall of the chamber.
15. The substrate processing apparatus according to claim 14, wherein the second heater is disposed between the liner and the side wall of the chamber.
16. The substrate processing apparatus according to claim 2, further comprising a plurality of target electrodes arranged in each of the plurality of targets and for supplying power to each of the plurality of targets, wherein the cooling unit has a refrigerant flow path arranged in each of the plurality of target electrodes.
17. A substrate processing method comprising: (a) the step of providing a substrate on a substrate support; and (b) the step of supplying a processing gas to the substrate on the substrate support while rotating the substrate support to form a film on the substrate, wherein (b) includes: (b-1) flowing the processing gas along the surface of each of a plurality of targets, and using ions in the plasma generated from the processing gas to release sputtered particles from the surface of each of the plurality of targets, and causing the processing gas containing the sputtered particles to flow out toward the substrate from each of the plurality of targets' processing gas supply ports; (b-2) rectifying the processing gas that has flowed out from each of the plurality of targets' processing gas supply ports toward the substrate using a rectifying gas; (b-3) heating the back side of the substrate on the substrate support with a first heater; and (b-4) heating the space between the substrate support and the plurality of targets and the front side of the substrate on the substrate support with a second heater.
18. The substrate processing method according to claim 17, wherein (b) further comprises (b-5) cooling the plurality of targets with a cooling unit.
19. The substrate processing method according to claim 17, wherein (b-1) comprises (b-1-1) flowing a first processing gas as the processing gas along the surface of a raw material target included in the plurality of targets, using ions in the plasma generated from the first processing gas to release raw material sputtered particles from the surface of the raw material target, and flowing the first processing gas containing the raw material sputtered particles out of the processing gas supply port toward the substrate, and (b-1-2) flowing a second processing gas as the processing gas along the surface of a dopant target included in the plurality of targets, using ions in the plasma generated from the second processing gas to release dopant sputtered particles from the surface of the dopant target, and flowing the second processing gas containing the dopant sputtered particles out of the processing gas supply port toward the substrate.
20. The substrate processing method according to claim 17, wherein (b-1) comprises flowing the processing gas along the surface of the raw material targets included in the plurality of targets, using ions in the plasma generated from the processing gas to release raw material sputtered particles from the surface of the raw material targets, and allowing the processing gas containing the raw material sputtered particles to flow out from the processing gas supply port toward the substrate, and (b-2) comprises supplying the rectifying gas containing the dopant gas toward the substrate.