Semiconductor light-emitting device and method for manufacturing semiconductor light-emitting device

Abstract

The present invention is characterized by comprising: a ceramic substrate having a placed electrode on the upper surface thereof and a mounted electrode on the lower surface thereof; and a semiconductor light-emitting element bonded to the upper surface of the substrate with the placed electrode interposed therebetween, wherein the substrate includes a cut surface, which has been cut by dicing, on a side surface part, and the cut surface is provided with printed characters engraved into the surface of the cut surface, or with printed characters comprising an absorption layer that absorbs visible light and is formed on the surface of the cut surface.

Description

Semiconductor light-emitting device and method for manufacturing semiconductor light-emitting device

[0001] The present invention relates to a semiconductor light-emitting device and a method for manufacturing a semiconductor light-emitting device.

[0002] In a semiconductor light-emitting device, in order to ensure traceability, characters such as identification numbers are printed by laser marking.

[0003] For example, Patent Document 1 discloses printing a manufacturing lot number or the like on the surface of the encapsulating resin of a semiconductor package by laser marking. Also, for example, Patent Document 2 discloses a light-emitting device in which a light-emitting element and a light-transmitting member are mounted on a wiring board, and a coating member (encapsulating member) containing a light-reflective material is disposed around them.

[0004] Japanese Patent Application Laid-Open No. 201,816,235, WO2009 / 069671

[0005] In a semiconductor light-emitting device having a CSP (Chip Size Package) structure on which a light-emitting element such as a light-emitting diode is mounted, for example, a sealing resin layer is formed so as to surround the periphery of the light-emitting element and the light-transmitting member mounted on the substrate. In such a semiconductor light-emitting device having a CSP structure, since no frame is provided at the peripheral portion, laser marking using an ultraviolet laser is performed on the upper surface of the sealing resin. At that time, there is a problem that the reliability of the product may be reduced because damage may occur to the light-emitting element or a protection element provided for overvoltage protection due to the irradiation energy of the ultraviolet laser.

[0006] Also, there is a problem that the sealing resin may deteriorate, causing discoloration and deformation, and the characters printed by laser marking may become unreadable.

[0007] The present invention has been made in view of the above problems, and an object thereof is to provide a semiconductor light-emitting device that enables highly distinguishable printing and has high reliability as a product.

[0008] The semiconductor light-emitting device according to the present invention comprises a ceramic substrate having a mounting electrode on its upper surface and a mounting electrode on its lower surface, and a semiconductor light-emitting element bonded to the upper surface of the substrate via the aforementioned mounting electrode, wherein the substrate includes a cut surface cut by dicing on its side surface, and the cut surface is provided with a marking engraved on the surface of the cut surface, or a marking made of a visible light absorbing layer formed on the surface of the cut surface.

[0009] Furthermore, the method for manufacturing a semiconductor light-emitting device according to the present invention is characterized by including the steps of: preparing a substrate made of ceramic having a mounting electrode on its upper surface and a mounting electrode on its lower surface; mounting an element on the mounting electrode; forming a light-transmitting member on the upper surface of the light-emitting device; forming a sealing member so as to cover the surfaces of the substrate and the mounting electrode and the sides of the light-emitting device and the light-transmitting member; dicing the substrate so as to form a cut surface on the side surface to separate the semiconductor light-emitting device into individual pieces; and laser marking by irradiating the cut surface of the substrate with laser light to perform laser marking.

[0010] This is a top view of a light-emitting device according to an embodiment of the present invention. This is a cross-sectional view of a light-emitting device according to an embodiment of the present invention. This is a side view of a light-emitting device according to an embodiment of the present invention, viewed from the side where laser marking has been applied. This is a diagram showing the manufacturing flow of a light-emitting device according to an embodiment of the present invention. This is a cross-sectional view of the substrate preparation process of a light-emitting device according to an embodiment of the present invention. This is a cross-sectional view of the element mounting process of a light-emitting device according to an embodiment of the present invention. This is a cross-sectional view of the fluorescent plate bonding process of a light-emitting device according to an embodiment of the present invention. This is a cross-sectional view of the resin encapsulation process of a light-emitting device according to an embodiment of the present invention. This is a cross-sectional view of the individualization process of a light-emitting device according to an embodiment of the present invention. This is a cross-sectional view of the laser marking process of a light-emitting device according to an embodiment of the present invention. This is a cross-sectional view showing an enlarged portion of the light-emitting device according to an embodiment of the present invention where laser marking has been applied. This is a cross-sectional view of the light-emitting device of the first comparative example. This is a diagram showing the bottom surface of the light-emitting device of the second comparative example. This is a cross-sectional view of the light-emitting device of the second comparative example.

[0011] Preferred embodiments of the present invention are described in detail below. In the following description and accompanying drawings, substantially identical or equivalent parts are denoted by the same reference numerals.

[0012] The configuration of the light-emitting device 100 according to an embodiment of the present invention will be described with reference to Figures 1 and 2. Figure 1 is a top view of the light-emitting device 100. Figure 2 is a cross-sectional view of the light-emitting device 100 shown in Figure 1 along line 2-2.

[0013] (Light-emitting device) The light-emitting device 100 comprises a ceramic substrate 11, a mounting electrode 12 provided on the upper surface of the ceramic substrate 11, a mounting electrode 13 provided on the lower surface of the ceramic substrate 11, a light-emitting element 21 arranged on the ceramic substrate 11 via the mounting electrode 12, a light-transmitting member 22 arranged on the upper surface of the light-emitting element 21, and a sealing member 23 arranged on the upper surface of the ceramic substrate 11 so as to cover the sides of the light-emitting element 21 and the light-transmitting member 22. In addition, a protection element 31 for overvoltage protection is provided on the upper surface of the mounting electrode 12 at a position spaced apart from the light-emitting element 21.

[0014] (Substrate) The ceramic substrate 11 has a rectangular top surface shape and is an insulating substrate made of a polycrystalline ceramic sintered body in which crystals such as aluminum nitride (AlN) and aluminum oxide (Al2O3) are densely bonded. The AlN substrate and Al2O3 substrate are white to gray in color and have light reflectivity. In this embodiment, a light gray AlN substrate was used. A pair of spaced mounting electrodes 12 are provided on the upper surface of the ceramic substrate 11. A pair of spaced mounting electrodes 13 are also provided on the lower surface of the ceramic substrate 11. Each of the mounting electrodes 12 and the mounting electrodes 13 are connected by conductive parts (not shown) provided on the inside or outside surface of the ceramic substrate 11. In other words, the mounting electrodes 12, the mounting electrodes 13 and the conductive parts form an electrically coupled electrode pair. In addition, the side surface of the ceramic substrate 11 is printed by laser marking (shown as "LM" in Figure 2).

[0015] (Light-emitting element) The light-emitting element 21 is a light-emitting diode (LED) having a rectangular top surface shape and a gallium nitride (GaN)-based semiconductor structural layer that includes a light-emitting layer that emits blue light. Depending on the purpose, the light-emitting element 21 can be selected to emit ultraviolet light, visible light, or infrared light. The top surface of the light-emitting element 21 is the light-emitting surface. The bottom surface of the light-emitting element 21 is provided with a pair of electrically connected element electrodes (not shown) that are connected to the semiconductor structural layer, and are bonded to a pair of spaced-apart mounting electrodes 12 via a bonding member such as gold-tin (AuSn). Therefore, by applying a forward voltage to the pair of spaced-apart mounting electrodes 13, the light-emitting element 21 emits light.

[0016] (Light-transmitting member) The light-transmitting member 22 has a rectangular top surface shape and is provided to cover the light-emitting surface of the light-emitting element 21. The light-transmitting member 22 is an optical element such as transparent glass, a phosphor plate, a diffractive optical element, a dielectric multilayer film, or a light diffuser plate. The light-transmitting member 22 in this embodiment is a ceramic phosphor plate in which yttrium aluminum garnet (YAG:Ce) phosphor particles, activated with cerium (Ce), are dispersed in an alumina (Al2O3) matrix crystal. This phosphor plate transmits a portion of the blue light emitted from the light-emitting element 21 and absorbs a portion, converting it into yellow light. As a result, white light, which is a mixture of blue and yellow light, is emitted from the top surface of the light-transmitting member 22. Note that the emitted light can also be made yellow or blue-green by increasing or decreasing the content of the YAG:Ce phosphor.

[0017] (Sealing Member) The sealing member 23 is formed to cover the upper surface of the ceramic substrate 11 and the sides of the light-emitting element 21 and the light-transmitting member 22. The sealing member 23 is made of a resin material formed by dispersing titanium oxide (TiO2) particles in a range of 16 wt% to 60 wt% in a silicone resin that transmits near-ultraviolet (UVA) to infrared light, and reflects white light under white light. In other words, the sealing member 23 is white. The sealing member 23 has the function of improving the output of light emitted from the upper surface of the light-emitting device 100 (the upper surface of the light-transmitting member 22) by suppressing light leakage from the sides of the light-emitting element 21 and the light-transmitting member 22. The sealing member 23 also has the function of protecting the light-emitting element 21 from corrosive environmental gases.

[0018] (Laser Marking) At least one of the sides of the ceramic substrate 11 is marked with laser marking (shown as "LM" in Figure 2). The side of the ceramic substrate 11 that is laser marked is a cut surface that is cut when the light-emitting device 100 is divided into individual pieces by dicing during the manufacturing process of the light-emitting device 100.

[0019] Figure 3 is a side view of the light-emitting device 100 as seen from the direction of arrow LL in Figure 2. The cross-section of the ceramic substrate 11, shown by the diagonal lines in the figure, has an altered layer in which latent scratches and microcracks formed during dicing have been created.

[0020] A manufacturing number for identifying the light-emitting device 100 is printed in the center of the cut surface of the ceramic substrate 11. The identification number is printed by laser marking using a laser printing device. Laser marking is performed on the cut surface of the ceramic substrate 11 on which the altered layer has been formed, enabling printing with improved print contrast and suppression of blurring.

[0021] (Manufacturing Method) Next, the manufacturing method of the light-emitting device 100 of this embodiment will be explained in accordance with the manufacturing flow shown in Figure 4.

[0022] First, as shown in Figure 5A, an assembly of ceramic substrates 11 is prepared, which consists of multiple ceramic substrates 11 linked together, each of which is patterned with mounting electrodes 12, mounting electrodes 13, and wiring (not shown) (STEP 101: Substrate preparation step).

[0023] Next, as shown in Figure 5B, the light-emitting element 21 and the protective element 31 are mounted on the mounting electrode 12 (STEP 102: Element mounting process). In this process, solder paste (for example, volatile solder paste of AuSn solder) which will serve as the bonding material is applied to the upper surface of the mounting electrode 12. Then, the light-emitting element 21 and the protective element 31 are placed on the mounting electrode 12 so that the applied solder paste is in contact with the lower surfaces of the light-emitting element 21 and the protective element 31, respectively. After that, the light-emitting element 21 and the protective element 31 are bonded together by heating to 300°C in a reflow oven to melt and solidify the solder. If the light-emitting element and the protective element have element electrodes on the upper surface side of the element, these electrodes are connected to the wiring on the substrate by wire bonding.

[0024] Next, as shown in Figure 5C, a phosphor plate, which serves as a light-transmitting member 22, is bonded to the upper surface of the light-emitting element 21 (STEP 103: Phosphor Plate Bonding Process). In this process, a translucent silicone resin, which serves as an adhesive, is applied to the upper surface of the light-emitting element 21. Then, the phosphor plate is placed and pressed onto the applied silicone resin, conforming to the shape of the upper surface of the light-emitting element 21. After that, the phosphor plate is bonded by heating at 170°C for 3 minutes to partially cure it.

[0025] Next, as shown in Figure 6A, a sealing member 23 is formed to cover the surfaces of the ceramic substrate 11 and the mounted electrode 12, and the sides of the light-emitting element 21 and the light-transmitting member 22 (STEP 104: Resin sealing process). In this process, a dam (weir) is made on the outer periphery of the assembly of ceramic substrates 11, and a resin mixture in which light-reflective titanium oxide particles are dispersed in a translucent silicone resin is injected into the dam. At this time, the resin mixture is injected until it reaches the upper end of the side surface of the light-transmitting member 22. Then, the resin mixture is cured by heating at 100°C for 1 hour and then at 150°C for 2 hours to form the sealing member 23. Various additives such as silica thickeners, dispersants that maintain the dispersion of titanium oxide particles, and carbon black that improves the light-shielding properties of the sealing member 23 can also be added to the resin mixture.

[0026] Next, as shown in Figure 6B, the light-emitting devices 100 are separated into individual pieces by cutting between them using a mechanical dicing apparatus having a dicing blade (shown as DB in the figure) supported with diamond particles (STEP 105: Separation process). In this process, the individual light-emitting devices were cut along their boundaries using a dicing blade supported with diamond particles of size #400 (average particle size 37 μm to 44 μm) to #800 (average particle size 18 μm to 22 μm). The cut surface of the ceramic substrate 11 formed in this process is also a cut surface formed by cutting with diamond particles supported on the dicing blade. Therefore, a modified layer with a depth of several microns to tens of microns, containing latent scratches and microcracks, is formed on the cut surface of the ceramic substrate 11.

[0027] Next, as shown in Figure 6C, laser marking is performed on the light-emitting device 100 (STEP 107: Laser marking process). In this process, a serial number used for product management is printed on the side surface of the ceramic substrate 11 of the light-emitting device 100, which has been separated through the individualization process in STEP 105, i.e., the completed light-emitting device 100, using a laser printing device. The serial number can be selected from, for example, alphanumeric characters, barcodes, QR codes (registered trademarks), etc.

[0028] Printing using a laser printing device can be performed using ultraviolet (UV) light with a wavelength of 355 nm, visible light with a wavelength of 532 nm, etc. In this embodiment, since the ceramic substrate 11 is made of aluminum nitride (AlN), laser marking using ultraviolet (UV) light is preferred. Furthermore, as the laser light for printing on the ceramic material, giant pulse light operated by a Q switch is preferred.

[0029] Laser marking can be performed using either light scattering printing, which engraves the surface according to the laser output and focus control, or blackening printing, which forms an absorbing layer (visible light absorption order) on the surface that absorbs visible light. With light scattering printing, the printed area is engraved in a concave shape, so the printing can be read regardless of the color of the ceramic substrate 11, for example, from white to black. It also has excellent printing durability, as the printing does not disappear unless the printed area LM is ground down. In this example, a thin gray aluminum nitride was used as the ceramic substrate 11, so light scattering printing was selected. Blackening printing can also be used if sufficient contrast can be obtained with respect to the material color of the ceramic substrate 11.

[0030] The laser marking process can be performed, for example, during transport within a characteristic inspection device or grade sorting device of the light-emitting device 100. Furthermore, as shown in Figure 6C, in a method where the upper surface of the light-transmitting member 22 of the light-emitting device 100 is attracted and transported by a pickup tool (shown as PT in the figure) of the transport device, the laser light can be irradiated perpendicularly to the side surface (the surface cut by dicing) of the ceramic substrate 11. In addition, printing can be performed on any side surface of the ceramic substrate 11 by rotating the tool. In particular, in light scattering printing, a high printing contrast can be obtained by irradiating the laser light perpendicularly.

[0031] Furthermore, the side surfaces of the ceramic substrate 11 of the light-emitting device 100 are rougher than the uncut surfaces of the top and bottom surfaces of the ceramic substrate 11. Such rough surfaces can cause poor ink adhesion or printing smudging, for example, when printing with ink. In addition, laser printing can cause a decrease in print contrast due to scattering of the laser light. In this embodiment, by using giant pulsed light, it is possible to perform light scattering printing that suppresses a decrease in print contrast even on the rough side surfaces of the ceramic substrate 11.

[0032] Furthermore, even if the light-emitting device 100 is miniaturized, the side surface of the ceramic substrate 11 allows for a larger printing area (especially the height of the printing surface) compared to the top surface where the light-transmitting member 22 occupies a large area, and the bottom surface where the mounted electrodes 13 occupy a large area.

[0033] Furthermore, since the interface between the ceramic substrate 11 and the sealing member 23 is exposed on the side surface of the light-emitting device 100 in this embodiment, the boundary line between the ceramic substrate 11 and the sealing member 23 can be used as a horizontal reference line when printing multiple characters (strings of characters) or tiling patterns. Therefore, laser marking alignment can be performed accurately and easily. In particular, the boundary line becomes clearer by using different material colors for the ceramic substrate 11 and the sealing member 23. In the light-emitting device 100 of this embodiment, the ceramic substrate 11 is light gray and the sealing member 23 is white, so a clear boundary line is obtained.

[0034] Furthermore, since the printed portion is exposed on the side of the light-emitting device 100, the serial number can be confirmed even after the light-emitting device 100 has been mounted on the circuit board. In addition, since the boundary line between the ceramic substrate 11 and the sealing member 23 serves as the printing reference, the printed portion can be easily found and recognized by a camera or the like.

[0035] Furthermore, by performing laser marking on the side surface of the ceramic substrate 11, as in the light-emitting device 100 of this embodiment, it is possible to suppress damage to the light-emitting element 21 and the protective element 31 caused by the irradiation energy during laser marking. This will be explained below.

[0036] (Damage due to irradiation energy) Figure 7 is an enlarged cross-sectional view of the side portion of the ceramic substrate 11 of the light-emitting device 100. In the figure, LM is the printing area by laser marking, and IE is the diffusion region of the laser light for printing. Since the ceramic substrate 11 of the light-emitting device 100 is a dense and light-shielding AlN polycrystalline ceramic sintered body, the diffusion region IE of the laser light is limited to a narrow area within the ceramic substrate 11.

[0037] (First Comparative Example) Next, the first comparative example will be described. Figure 8 is a cross-sectional view of the light-emitting device 200 of the first comparative example. In the figure, LM2 is the printing section by laser marking, and IE2 is the diffusion region of the laser light for printing. The light-emitting device 200 of the first comparative example differs from the light-emitting device 100 of this embodiment only in that the printing section LM2 is provided on the upper surface of the sealing member 23.

[0038] Since the sealing member 23 is a resin body in which light-reflective titanium oxide (TiO2) particles are dispersed in a translucent silicone resin, the diffusion area IE2 of the printing laser light is wider than that of the ceramic substrate 11. As a result, the irradiation energy of the laser light can reach the light-transmitting member 22, the sides of the light-emitting element 21, and the protective element 31, potentially causing damage. In particular, the occurrence of defects due to damage becomes more pronounced as the light-emitting device becomes smaller.

[0039] As described above, compared to the light-emitting device 200 of the first comparative example, the light-emitting device 100 of this embodiment can suppress the effect of laser light irradiation on the elements (for example, malfunction of the light-emitting element 21 due to exposure to irradiation energy), thus maintaining product reliability.

[0040] (Second Comparative Example) Next, a second comparative example will be described. Figures 9 and 10 show the light-emitting device 300 of the second comparative example. Figure 9 is a rear view of the light-emitting device 300, and Figure 10 is a cross-sectional view obtained by cutting Figure 9 along line segment 10-10. In the figures, LM3 is the printing section by laser marking. The light-emitting device 300 of the second comparative example differs from the light-emitting device 100 of this embodiment only in that the printing section LM3 is provided between a pair of mounted electrodes on the back surface.

[0041] The second comparative example, the light-emitting device 300, is similar to the light-emitting device 100 of this embodiment in that the surface of the ceramic substrate 11 is printed by laser marking. The difference is that in the light-emitting device 300, the laser marking is printed on the underside of the ceramic substrate 11, i.e., the non-cut surface (the raw surface of the substrate). Note that if the printing section LM3 is provided on the back surface of the light-emitting device 300, the printed serial number cannot be seen when the light-emitting device 300 is mounted (soldered) on the circuit board, but the serial number can be seen when it is removed.

[0042] (Presence or Absence of Altered Layer) Next, we will describe the results of comparing the appearance of laser markings in this embodiment (side surface of the ceramic substrate 11) which has an altered layer on the printing surface and in a second comparative example (back surface of the ceramic substrate 11) which does not have an altered layer on the printing surface. The comparison of the printing state was performed using a stereomicroscope and photographs taken under ring illumination and reflected light illumination. The printing was done using light scattering printing, which carves the printed area into a concave shape. Two character sizes were used: height × width × spacing distance of 0.156 mm × 0.117 mm × 0.05 mm (uppercase) and 0.080 mm × 0.060 mm × 0.085 mm (lowercase). The string consisted of two types: English letters and numbers. The mechanical dicing blade used for individualization was a blade loaded with abrasive grains of #400, #600, and #800.

[0043] Under ring illumination and direct reflected light, and in both uppercase and lowercase letters, the character strings printed on the side surface of the ceramic substrate 11 in this embodiment exhibited higher contrast, less blurring, and superior visibility. In particular, the #400 grit abrasive for the blade was suitable for the character size in this embodiment. In addition to character strings, a QR code (registered trademark) tiling pattern was also compared, and the tiling pattern printed on the side surface of the ceramic substrate 11 exhibited higher contrast, less blurring, and superior visibility.

[0044] The difference in the printed surfaces of the two is, in this embodiment, the surface obtained by mechanically dicing the ceramic substrate 11, and in the second comparative example, it is the non-cut surface (material surface) of the ceramic substrate 11. In other words, the side surface of the ceramic substrate 11 in this embodiment is the surface on which the altered layer is formed, and the back surface of the ceramic substrate 11 in the second comparative example is the surface on which no altered layer is formed. That is, it has been confirmed that the altered layer formed on the side surface of the ceramic substrate 11 functions as an auxiliary layer that suppresses the high contrast and bleeding of the light-scattering printing in laser marking.

[0045] As described above, in the light-emitting device 100 of this embodiment, a cut surface formed by mechanical dicing when the light-emitting device 100 is singulated is provided on the side portion of the ceramic substrate 11, and printing by laser marking is performed on the cut surface. Since an altered layer including latent defects and microcracks is formed on the cut surface of the ceramic substrate 11, it is possible to perform printing with high contrast and suppressed bleeding and high discriminability during the printing in laser marking. Further, since the side portion of the ceramic substrate 11 is irradiated with laser light, printing can be performed without causing damage due to the irradiation energy to the light transmission member 22, the light-emitting element 21, the protective element 31, and the like. That is, a highly reliable semiconductor light-emitting device can be provided.

[0046] Note that the present invention is not limited to that shown in the above embodiment. For example, in the above embodiment, an example in which the light-emitting device 100 is singulated by mechanical dicing to form a cut surface having an altered layer on the side portion of the ceramic substrate 11 has been described. However, different from this, for example, the ceramic substrate 11 may be cut by laser dicing, and an altered layer may be formed by performing sandblasting on the cut surface. Further, an altered layer may be formed by performing sandblasting on the material surface of the substrate.

[0047] 100 Light-emitting device 11 Ceramic substrate 12 Mounting electrode 13 Mounting electrode 21 Light-emitting element 22 Light transmission member 23 Sealing member 31 Protective element

Claims

1. A semiconductor light-emitting device comprising: a substrate made of ceramic having a mounting electrode on its upper surface and a mounting electrode on its lower surface; and a semiconductor light-emitting element bonded to the upper surface of the substrate via the mounting electrode, wherein the substrate includes a cut surface formed by cutting the substrate on its side surface, and the cut surface is provided with a marking engraved on the surface of the cut surface, or a marking made of a visible light absorbing layer formed on the surface of the cut surface.

2. The semiconductor light-emitting apparatus according to claim 1, characterized in that the substrate has a modified layer containing latent scratches or microcracks on the surface of the cut surface.

3. The semiconductor light-emitting apparatus according to claim 1, characterized in that the cut surface of the substrate is a cutting surface formed by a mechanical blade.

4. The semiconductor light-emitting apparatus according to claim 1, characterized in that the substrate is a ceramic substrate made of a polycrystalline sintered body of ceramic.

5. The semiconductor light-emitting apparatus according to claim 1, characterized in that the substrate contains aluminum nitride or aluminum oxide.

6. The semiconductor light-emitting apparatus according to claim 1, further comprising: a light-transmitting member formed on the upper surface of the semiconductor light-emitting element and transmitting light emitted from the light-emitting element; and a sealing member formed to cover the upper surface of the substrate and the sides of the semiconductor light-emitting element and the light-transmitting member.

7. The semiconductor light-emitting apparatus according to claim 6, characterized in that the surface including the boundary line between the substrate and the sealing member is the outer surface.

8. The semiconductor light-emitting apparatus according to claim 7, characterized in that the color of the substrate and the color of the sealing member are different.

9. The semiconductor light-emitting apparatus according to claim 7, characterized in that the printing is arranged in multiple rows parallel to the boundary line of the member.

10. A method for manufacturing a semiconductor light-emitting device, comprising: a step of preparing a substrate made of ceramic having a mounting electrode on its upper surface and a mounting electrode on its lower surface; an element mounting step of mounting a light-emitting element on the mounting electrode; a light-transmitting member forming step of forming a light-transmitting member on the upper surface of the light-emitting element; a sealing member forming step of forming a sealing member so as to cover the surfaces of the substrate and the mounting electrode and the sides of the light-emitting element and the light-transmitting member; a dicing step of dicing the substrate so as to form a cut surface on the side surface to separate the semiconductor light-emitting device into individual pieces; and a laser marking step of irradiating the cut surface of the substrate with laser light to perform printing by laser marking.

11. The method for manufacturing a semiconductor light-emitting apparatus according to claim 10, characterized in that the dicing in the individualization step is performed by mechanical dicing.

12. The method for manufacturing a semiconductor light-emitting apparatus according to claim 11, characterized in that a modified layer is formed in the depth direction from the surface of the cut surface cut by the mechanical dicing.

13. The method for manufacturing a semiconductor light-emitting apparatus according to claim 10, characterized in that, in the laser marking step, the printing by laser marking is performed by engraving the cut surface of the substrate by light scattering printing using the laser light.

14. The method for manufacturing a semiconductor light-emitting apparatus according to claim 13, characterized in that the laser light used for printing by laser marking is giant pulse light emitted by a Q switch.

15. The method for manufacturing a semiconductor light-emitting apparatus according to claim 10, characterized in that, in the laser marking step, the printing by laser marking is performed by forming an absorption layer that absorbs visible light on the cut surface of the substrate by blackening printing using the laser light.

Images