Plasma equipment for semiconductor manufacturing facility

Abstract

According to the present invention, provided is plasma equipment for a semiconductor facility, which is equipment that treats exhaust gas discharged, by means of a vacuum pump, from a semiconductor process chamber in which a semiconductor manufacturing process using process gas is performed, through a chamber exhaust pipe connecting the semiconductor process chamber and the vacuum pump, the plasma equipment comprising: an exhaust pipe plasma reactor installed on the chamber exhaust pipe to generate plasma in the exhaust gas to remove components to be removed contained in the exhaust gas; a remote plasma reactor which generates plasma to decompose source gas for remote plasma to generate remote plasma gas including reactive active species; a power supply device which generates AC power required for the operation of the exhaust pipe plasma reactor and the operation of the remote plasma reactor; and a power distributor which distributes the AC power generated by the power supply device to supply the AC power to the exhaust pipe plasma reactor and the remote plasma reactor.

Description

Plasma equipment for semiconductor manufacturing facilities

[0001] The present invention relates to semiconductor manufacturing equipment technology, and more specifically, to plasma equipment used in semiconductor manufacturing equipment.

[0002] Semiconductor devices are manufactured by repeatedly performing processes such as photolithography, etching, diffusion, and metal deposition on wafer substrates using various process gases in semiconductor process chambers equipped with semiconductor manufacturing facilities. Plasma technology is applied in various forms within semiconductor manufacturing facilities.

[0003] Published Patent No. 10-2005-0059858 describes the configuration of a power supply system that supplies RF power to a plasma electrode composed of multiple electrode blocks in plasma process equipment, published Patent No. 10-2023-0020633 describes the configuration of a multi-remote plasma source system using RF power capable of performing a wafer processing process and a plasma cleaning process within a chamber by means of a remote plasma source, and registered Patent No. 10-2155631 describes the configuration of a power source that supplies AC power to a plasma reactor that processes exhaust gas, installed on an exhaust pipe through which exhaust gas generated in a process chamber of a semiconductor manufacturing facility is discharged.

[0004] The objective of the present invention is to provide a plasma equipment for a semiconductor manufacturing facility capable of efficiently supplying power to two plasma generating devices in a semiconductor manufacturing facility.

[0005] To achieve the above-described objective of the present invention, according to one aspect of the present invention, a plasma equipment for semiconductor manufacturing facilities is provided, comprising: a chamber exhaust pipe connected by a vacuum pump to a semiconductor process chamber in which a semiconductor manufacturing process using process gas is performed, and which processes exhaust gas; an exhaust pipe plasma reactor installed on the chamber exhaust pipe to generate plasma in the exhaust gas to remove a component to be removed contained in the exhaust gas; a remote plasma reactor that generates plasma to decompose a source gas for remote plasma to produce a remote plasma gas containing a reaction active species; a power supply unit that produces alternating current power required for the operation of the exhaust pipe plasma reactor and the remote plasma reactor; and a power distributor that distributes the alternating current power produced by the power supply unit and supplies it to the exhaust pipe plasma reactor and the remote plasma reactor, wherein the remote plasma is supplied as exhaust gas discharged from the exhaust pipe plasma reactor.

[0006] To achieve the above-described objective of the present invention, according to another aspect of the present invention, a plasma equipment for semiconductor manufacturing facilities is provided, comprising: an external plasma reactor that plasma-treats the process gas outside the semiconductor process chamber to generate a plasma for semiconductor manufacturing supplied to the process chamber; a chamber plasma electrode installed in the semiconductor process chamber to generate a plasma for semiconductor manufacturing by generating a plasma discharge of the process gas within the semiconductor process chamber; a power supply unit that produces alternating current power required for the operation of the external plasma reactor and the plasma discharge; and a power distributor that distributes the alternating current power produced by the power supply unit and supplies it to the external plasma reactor and the chamber plasma electrode.

[0007] In order to achieve the above-mentioned objective of the present invention, according to another aspect of the present invention, a plasma equipment for semiconductor manufacturing facilities is provided, which processes exhaust gas discharged from a semiconductor process chamber where a semiconductor manufacturing process using process gas is performed, through a chamber exhaust pipe connecting the semiconductor process chamber and the vacuum pump by a vacuum pump, the equipment comprising: an exhaust pipe plasma reactor installed on the chamber exhaust pipe to generate plasma in the exhaust gas to remove a component to be removed contained in the exhaust gas; a remote plasma reactor that generates plasma to decompose a source gas for remote plasma to produce a remote plasma gas containing a reaction active species; a power supply device that produces power required for the operation of the exhaust pipe plasma reactor and the remote plasma reactor; and a switch device that electrically connects the power supply device to either the exhaust pipe plasma reactor or the remote plasma reactor so that the power produced by the power supply device is selectively supplied to either the exhaust pipe plasma reactor or the remote plasma reactor, wherein the remote plasma gas is supplied between the semiconductor process chamber and the vacuum pump on the exhaust gas flow line.

[0008] According to the present invention, all the objectives of the invention described above can be achieved. Specifically, since power produced from a single power supply unit is distributed to two plasma generators by a power distributor or selectively supplied to one of the two plasma generators by a switching device, overall power supply in a semiconductor manufacturing facility can be efficiently achieved.

[0009] FIG. 1 is a diagram illustrating the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to a first embodiment of the present invention.

[0010] FIG. 2 is a cross-sectional view of an external plasma reactor equipped in the semiconductor manufacturing facility shown in FIG. 1.

[0011] FIG. 3 is a perspective view of a magnetic core provided in an external plasma reactor shown in FIG. 2.

[0012] FIG. 4 is a diagram illustrating the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to a second embodiment of the present invention.

[0013] FIG. 5 is a cross-sectional view of an exhaust pipe plasma reactor equipped in a semiconductor manufacturing facility shown in FIG. 4.

[0014] FIG. 6 is a diagram illustrating the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 3A embodiment of the present invention.

[0015] Figure 7 is a cross-sectional view of the exhaust pipe plasma reactor of the semiconductor manufacturing facility shown in Figure 6.

[0016] FIG. 8 is a perspective view illustrating the magnetic core shown in FIG. 7.

[0017] FIG. 9 is a cross-sectional view of a remote plasma reactor of a semiconductor manufacturing facility shown in FIG. 6.

[0018] FIG. 10 is a perspective view illustrating the magnetic core shown in FIG. 4.

[0019] FIG. 11 is a diagram illustrating the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 3B embodiment of the present invention.

[0020] FIG. 12 is a diagram illustrating the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 4A embodiment of the present invention.

[0021] FIG. 13 is a diagram illustrating the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 4B embodiment of the present invention.

[0022] FIG. 14 is a diagram illustrating the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 5A embodiment of the present invention.

[0023] FIG. 15 is a diagram illustrating the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 5B embodiment of the present invention.

[0024] FIG. 16 is a diagram illustrating the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 6A embodiment of the present invention.

[0025] FIG. 17 is a diagram illustrating the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 6B embodiment of the present invention.

[0026] FIG. 18 is a diagram illustrating the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 7A embodiment of the present invention.

[0027] FIG. 19 is a diagram illustrating the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 7B embodiment of the present invention.

[0028] FIG. 20 is a diagram illustrating the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 8A embodiment of the present invention.

[0029] FIG. 21 is a diagram illustrating the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 8B embodiment of the present invention.

[0030] FIG. 22 is a diagram illustrating the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 9A embodiment of the present invention.

[0031] FIG. 23 is a diagram illustrating the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 9B embodiment of the present invention.

[0032] FIG. 24 is a diagram illustrating the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 10A embodiment of the present invention.

[0033] FIG. 25 is a diagram illustrating the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 10B embodiment of the present invention.

[0034] FIG. 26 is a diagram illustrating the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 11th embodiment of the present invention.

[0035] FIG. 27 is a diagram illustrating the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 12th embodiment of the present invention.

[0036] Hereinafter, the configuration and operation of an embodiment of the present invention will be described in detail with reference to the drawings.

[0037] FIG. 1 shows a schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to a first embodiment of the present invention as a block diagram. Referring to FIG. 1, the semiconductor manufacturing facility (100) includes a semiconductor process chamber (101) in which a semiconductor manufacturing process using various process gases is performed, a vacuum pump (105) that forms an exhaust pressure for discharging gas from the semiconductor process chamber (101), a chamber exhaust pipe (106) connecting the semiconductor process chamber (101) and the vacuum pump (105), a pump exhaust pipe (107) extending downstream from the vacuum pump (105), and, as an embodiment of the present invention, a plasma equipment (108) that generates plasma for the semiconductor process required for the semiconductor manufacturing process in the semiconductor process chamber (101).

[0038] A semiconductor process chamber (101) performs a semiconductor manufacturing process by processing a substrate (103) supported on a stage (102) using various process gases. The semiconductor process chamber (101) includes all types of semiconductor process chambers commonly used in the field of semiconductor manufacturing equipment technology to manufacture semiconductor devices. Residual gases generated in the semiconductor process chamber (101) are discharged from the semiconductor process chamber (101) through a chamber exhaust pipe (106).

[0039] The vacuum pump (105) forms negative pressure on the side of the semiconductor process chamber (101) through a chamber exhaust pipe (106) connecting the semiconductor process chamber (101) and the vacuum pump (105) in order to discharge gas inside the semiconductor process chamber (101) from the semiconductor process chamber (101). Since the vacuum pump (105) includes the configuration of a vacuum pump commonly used for gas discharge in the field of semiconductor manufacturing equipment technology, a detailed description thereof is omitted.

[0040] The chamber exhaust pipe (106) connects the exhaust port of the semiconductor process chamber (101) and the intake port of the vacuum pump (105) between the semiconductor process chamber (101) and the vacuum pump (105). Due to the negative pressure formed by the vacuum pump (105), residual gas in the semiconductor process chamber (101) is discharged as exhaust gas through the chamber exhaust pipe (106).

[0041] The pump exhaust pipe (107) extends downstream from the vacuum pump (105). The pump exhaust pipe (107) is connected to the discharge port of the vacuum pump (105) so that exhaust gas discharged from the vacuum pump (105) flows through it. Although not illustrated, a gas purification device, such as a scrubber, is installed at the downstream end of the pump exhaust pipe (107).

[0042] Plasma equipment (108) is a first embodiment of the present invention and generates plasma for semiconductor processing to process a substrate (103) in a semiconductor process chamber (101). Plasma equipment (108) comprises an external plasma reactor (110) that generates plasma supplied from outside the semiconductor process chamber (101) to the semiconductor process chamber (101), a gas supply unit (150) that supplies source gas to the external plasma reactor (110), a chamber plasma electrode (160) for generating plasma for semiconductor processing in the semiconductor process chamber (101), a power supply unit (170) that produces power required for the external plasma reactor (110) and the chamber plasma electrode (160), a power distributor (180) that distributes power produced by the power supply unit (170) and supplies it to the external plasma reactor (110) and the chamber plasma electrode (160), and a controller (190) that controls the operation of the power distributor (180).

[0043] The external plasma reactor (110) generates plasma supplied from outside the semiconductor process chamber (101) to the semiconductor process chamber (101). The plasma generated in the external plasma reactor (110) is semiconductor process plasma and is supplied to the semiconductor process chamber (101) to be used for processing the substrate (103). The external plasma reactor (110) generates semiconductor process plasma by decomposing the source gas supplied from the gas supply unit (150) using plasma. In this embodiment, the external plasma reactor (110) is described as an inductively coupled plasma reactor that utilizes inductively coupled plasma (ICP). Although the external plasma reactor (110) is described as utilizing inductively coupled plasma in this embodiment, the present invention is not limited thereto. In the present invention, the external plasma reactor (110) includes any type of plasma reactor that generates a plasma reaction (e.g., a plasma reactor using capacitively coupled plasma (CCP)), and this is also within the scope of the present invention. The external plasma reactor (110) operates by receiving power produced by a power supply unit (170) through a power distributor (180).

[0044] FIG. 2 shows a schematic configuration of an external plasma reactor (110) as a cross-sectional view. Referring to FIG. 2, the external plasma reactor (110) comprises a reaction chamber (120), a magnetic core (130) arranged to surround the reaction chamber (120), an igniter (140) for plasma ignition, and a coil (not shown) wound on the magnetic core (130) and supplied with power from a power supply unit (170 in FIG. 1).

[0045] The reaction chamber (120) is a toroidal-shaped chamber and is equipped with a gas inlet (121), a gas outlet (123) located spaced apart from the gas inlet (121), and a plasma reaction section (125) connecting the gas inlet (121) and the gas outlet (123) where a plasma reaction occurs.

[0046] The gas inlet section (121) is in the form of a short tube extending along a straight extension axis (X1), and the tip of the gas inlet section (121) is open to form an inlet (122) into which exhaust gas is introduced. The inlet (122) is connected to a gas supply unit (150 in FIG. 1). Source gas supplied by the gas supply unit (150 in FIG. 1) is introduced into the reaction chamber (120) through the inlet (122).

[0047] The gas discharge section (123) is in the form of a short tube located coaxially spaced from the gas inlet section (121) on the extension axis (X1), and the rear end of the gas discharge section (123) is open to form an outlet (124) through which plasma for the semiconductor process is discharged. The gas discharge section (123) is connected to the semiconductor process chamber (101 in FIG. 1). Plasma for the semiconductor process generated from an external plasma reactor (110) is supplied to the semiconductor process chamber (101 in FIG. 1) through the outlet (124).

[0048] The plasma reaction section (125) connects the separated gas inlet section (121) and gas outlet section (123) and forms a plasma reaction region (A1) inside. The plasma reaction section (125) is equipped with a first connecting pipe section (126) and a second connecting pipe section (127) positioned separately on both sides with an extension axis (X1) in between. The first connecting pipe section (126) and the second connecting pipe section (127) extend generally parallel to the extension axis (X1) and communicate with the gas inlet section (121) and the gas outlet section (123). Accordingly, a plasma for semiconductor processes is generated in the plasma reaction section (125) along a ring-shaped discharge loop (R1) as shown by the dashed line. The plasma for semiconductor processes generated in the plasma reaction section (125) is discharged through the outlet (124).

[0049] In this embodiment, the reaction chamber (120) is described as being configured by combining a first chamber member (120a) comprising the entire gas inlet section (121), a part of the first connecting pipe section (126) connected to the gas inlet section (121), and a part of the second connecting pipe section (127), and a second chamber member (120b) comprising a gas outlet section (123), a part of the first connecting pipe section (126) connected to the gas outlet section (123), and a part of the second connecting pipe section (127), but the present invention is not limited thereto.

[0050] The magnetic core (130) is positioned to surround the reaction chamber (120). In this embodiment, the magnetic core (130) is described as a ferrite core commonly used in inductively coupled plasma generators. FIG. 3 shows the magnetic core (130) as a perspective view. Referring to FIG. 2 and FIG. 3, the magnetic core (130) has a ring-shaped ring portion (131) that surrounds the plasma reaction portion (125) of the reaction chamber (120) from the outside, and a connecting portion (135) that crosses the inner region of the ring portion (131).

[0051] The ring portion (131) is in the shape of a rectangular ring and is positioned perpendicular to the extension axis (X1) to surround the plasma reaction portion (125) of the reaction chamber (120) from the outside. The rectangular ring portion (131) has two opposing long sides (132a, 132b) and two opposing short sides (133a, 133b).

[0052] The connecting portion (135) extends in a straight line to connect the two opposing long side portions (132a, 132b) of the ring portion (131). Both ends of the connecting portion (135) are connected to the longitudinal center of each of the two long side portions (132a, 132b). The connecting portion (135) is positioned to pass through a gap (128) formed between the first connecting portion (126) and the second connecting portion (127) of the reaction chamber (120). By the connecting portion (135), the internal region of the ring portion (131) is separated into a first through hole (136) and a second through hole (137), through which the first connecting portion (126) of the reaction chamber (120) passes and through which the second connecting portion (127) of the reaction chamber (120) passes. Accordingly, the magnetic core (130) is formed to surround the first connecting pipe section (126) and the second connecting pipe section (127) of the reaction chamber (120) from the outside, respectively.

[0053] Referring to FIG. 2, the igniter (140) receives high-voltage power from a power supply unit (170 in FIG. 1) to ignite the plasma. In this embodiment, the igniter (140) is described as being located adjacent to the gas inlet (121) in the plasma reaction section (125) of the reaction chamber (120), but the present invention is not limited thereto.

[0054] A coil (not shown) is wound around a magnetic core (130) and connected to a power supply (170 in FIG. 1). The coil (not shown) receives alternating current power of radio frequency (RF) through the power supply (170 in FIG. 1) to form an induced magnetic flux in the magnetic core (130). An induced electric field is generated by the induced magnetic flux formed in the magnetic core (130), and plasma is formed by the generated induced electric field.

[0055] Referring to FIG. 1, the gas supply unit (150) supplies various types of process gases, which are source gases for the semiconductor process plasma, to the external plasma reactor (110).

[0056] A chamber plasma electrode (160) is installed in a semiconductor process chamber (101) to generate plasma for semiconductor processes. The chamber plasma electrode (160) receives power from a power supply unit (170) and generates a plasma discharge for generating plasma for semiconductor processes in the semiconductor process chamber (101). The process gas supplied to the semiconductor process chamber (101) forms plasma for semiconductor processes in the semiconductor process chamber (101) through the action of the chamber plasma electrode (160). In the semiconductor process chamber (101), a corresponding electrode (165) that interacts with the chamber plasma electrode (160) may be installed on a stage (102).

[0057] The power supply unit (170) produces alternating current power required for the operation of the external plasma reactor (110) and for plasma discharge by the chamber plasma electrode (160). The alternating current power produced by the power supply unit (170) is distributed through a power distributor (180) and supplied to the external plasma reactor (110) and the chamber plasma electrode (160). In this embodiment, the alternating current power produced by the power supply unit (170) is described as radio frequency power, which is a high frequency.

[0058] The power distributor (180) distributes high-frequency alternating current power produced by the power supply unit (170) and supplies it to the external plasma reactor (110) and the chamber plasma electrode (160), respectively, thereby allowing the external plasma reactor (110) and the chamber plasma electrode (160) to operate simultaneously. The power distributor (180) is controlled by a controller (190) to adjust the ratio of power supplied to the external plasma reactor (110) and power supplied to the chamber plasma electrode (160).

[0059] The controller (190) controls the operation of the power distributor (180). By controlling the operation of the power distributor (180) by the controller (190), the ratio of the power supplied to the external plasma reactor (110) and the power supplied to the chamber plasma electrode (160) from the AC power produced by the power supply unit (170) can be adjusted.

[0060] Although not shown in the drawing, a reactor impedance matching part that matches the impedance between the power supply unit (170) and the external plasma reactor (110) and an electrode impedance matching part that matches the impedance between the power supply unit (170) and the chamber plasma electrode (160) may be further provided.

[0061] FIG. 4 illustrates a schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to a second embodiment of the present invention as a block diagram. Referring to FIG. 4, the semiconductor manufacturing facility (200) includes a semiconductor process chamber (201) in which a semiconductor manufacturing process using various process gases is performed, a vacuum pump (105) that forms an exhaust pressure for discharging gas from the semiconductor process chamber (201), a chamber exhaust pipe (106) connecting the semiconductor process chamber (201) and the vacuum pump (105), a pump exhaust pipe (107) extending downstream from the vacuum pump (105), and plasma equipment (208) according to a second embodiment of the present invention.

[0062] The semiconductor process chamber (201) performs a semiconductor manufacturing process by processing a substrate using various process gases. The semiconductor process chamber (201) includes all types of semiconductor process chambers commonly used in the field of semiconductor manufacturing equipment technology to manufacture semiconductor devices. Residual gas generated in the semiconductor process chamber (201) is discharged from the semiconductor process chamber (201) through the chamber exhaust pipe (106).

[0063] The vacuum pump (105) forms negative pressure on the side of the semiconductor process chamber (201) through a chamber exhaust pipe (106) connecting the semiconductor process chamber (201) and the vacuum pump (105) in order to discharge residual gas from the semiconductor process chamber (201). Since the vacuum pump (105) includes the configuration of a vacuum pump commonly used for gas discharge in the field of semiconductor manufacturing equipment technology, a detailed description thereof is omitted.

[0064] The chamber exhaust pipe (106) connects the exhaust port of the semiconductor process chamber (201) and the intake port of the vacuum pump (105) between the semiconductor process chamber (201) and the vacuum pump (105). Due to the negative pressure formed by the vacuum pump (105), residual gas in the semiconductor process chamber (201) is discharged as exhaust gas through the chamber exhaust pipe (106).

[0065] The pump exhaust pipe (107) extends downstream from the vacuum pump (105). The pump exhaust pipe (107) is connected to the discharge port of the vacuum pump (105) so that exhaust gas discharged from the vacuum pump (105) flows through it. Although not illustrated, a gas purification device, such as a scrubber, is installed at the downstream end of the pump exhaust pipe (107).

[0066] Plasma equipment (208) is a second embodiment of the present invention and comprises an external plasma reactor (110) that generates plasma supplied from outside the semiconductor process chamber (201) to the semiconductor process chamber (201), a gas supply unit (150) that supplies source gas to the external plasma reactor (110), an exhaust pipe plasma reactor (210) that is installed on the chamber exhaust pipe (106) to process exhaust gas discharged from the semiconductor process chamber (201), a power supply unit (170) that produces power required for the operation of the external plasma reactor (110) and the exhaust pipe plasma reactor (210), a power distributor (180) that distributes power produced by the power supply unit (170) and supplies it to the external plasma reactor (110) and the exhaust pipe plasma reactor (210), and a controller (190) that controls the operation of the power distributor (180).

[0067] The external plasma reactor (110) generates plasma supplied from outside the semiconductor process chamber (201) to the semiconductor process chamber (201). The plasma generated in the external plasma reactor (110) is a plasma for semiconductor processing, supplied to the semiconductor process chamber (201), and used for processing a substrate. Since the configuration and operation of the external plasma reactor (110) are generally the same as those described in FIGS. 1 and FIGS. 2, a detailed description thereof is omitted here.

[0068] The gas supply unit (150) supplies various types of process gases, which are source gases for the semiconductor process plasma, to the external plasma reactor (110).

[0069] The exhaust pipe plasma reactor (210) is installed on the chamber exhaust pipe (106) to generate exhaust gas treatment plasma for treating exhaust gas discharged from the semiconductor process chamber (201). By the exhaust gas treatment plasma generated in the exhaust pipe plasma reactor (210), components to be removed contained in the exhaust gas are removed, and additionally, the generation of powder that reduces the fluidity of the exhaust gas can be prevented. In this embodiment, the exhaust pipe plasma reactor (210) is described as an inductively coupled plasma reactor that utilizes inductively coupled plasma (ICP). Although the exhaust pipe plasma reactor (210) is described as utilizing inductively coupled plasma in this embodiment, the present invention is not limited thereto. In the present invention, the exhaust pipe plasma reactor includes any type of plasma reactor that generates a plasma reaction (for example, a plasma reactor utilizing capacitively coupled plasma (CCP)), and this also falls within the scope of the present invention. The exhaust pipe plasma reactor (210) operates by receiving power produced by the power supply unit (170) through the power distributor (180).

[0070] FIG. 5 shows a schematic configuration of an exhaust pipe plasma reactor (210) as a cross-sectional view. Referring to FIG. 5, the exhaust pipe plasma reactor (210) comprises a reaction chamber (220), a magnetic core (130) arranged to surround the reaction chamber (220), an igniter (240) for plasma ignition, and a coil (not shown) wound on the magnetic core (230) and supplied with power from a power supply unit (170 in FIG. 4).

[0071] The reaction chamber (220) is a toroidal-shaped chamber and is equipped with a gas inlet (221), a gas outlet (223) located spaced apart from the gas inlet (221), and a plasma reaction section (225) connecting the gas inlet (221) and the gas outlet (223) where a plasma reaction occurs.

[0072] The gas inlet section (221) is in the form of a short tube extending along a straight extension axis (X2), and the leading end of the gas inlet section (221) is open to form an inlet (222) into which exhaust gas discharged from the semiconductor process chamber (201) is introduced.

[0073] The gas discharge section (223) is a short tube-shaped structure located coaxially spaced from the gas inlet section (221) on the extension axis (X2), and the rear end of the gas discharge section (223) is open to form an outlet (224) through which exhaust gas is discharged.

[0074] The plasma reaction section (225) connects the separated gas inlet section (221) and gas outlet section (223) and forms a plasma treatment area (A2) inside. The plasma reaction section (225) is equipped with a first connecting pipe section (226) and a second connecting pipe section (227) positioned separately on both sides with the extension axis (X2) in between. The first connecting pipe section (226) and the second connecting pipe section (227) extend generally parallel to the extension axis (X2) and communicate with the gas inlet section (221) and the gas outlet section (223). Accordingly, plasma is generated in the plasma reaction section (225) along a ring-shaped discharge loop (R2) as shown by the dashed line. After the exhaust gas introduced through the gas inlet (222) is treated by the plasma generated in the plasma reaction section (225), it is discharged through the outlet (224).

[0075] In this embodiment, the reaction chamber (220) is described as being configured by combining a first chamber member (220a) comprising the entire gas inlet section (221), a part of the first connecting pipe section (226) connected to the gas inlet section (221), and a part of the second connecting pipe section (227), and a second chamber member (220b) comprising a gas outlet section (223), a part of the first connecting pipe section (226) connected to the gas outlet section (223), and a part of the second connecting pipe section (227), but the present invention is not limited thereto.

[0076] The magnetic core (130) is positioned to surround the reaction chamber (220). In this embodiment, the magnetic core (130) is described as a ferrite core commonly used in inductively coupled plasma generators. Since the magnetic core (130) is generally identical in configuration to the magnetic core (130) shown in FIG. 3, a detailed description thereof is omitted here.

[0077] The igniter (240) receives high-voltage power from a power supply unit (170 in FIG. 4) to ignite the plasma. In this embodiment, the igniter (240) is described as being located adjacent to the gas inlet (221) in the plasma reaction section (225) of the reaction chamber (220), but the present invention is not limited thereto.

[0078] A coil (not shown) is wound around a magnetic core (130) and connected to a power supply (170 in FIG. 4). The coil (not shown) receives alternating current power of a high frequency radio frequency through the power supply (170 in FIG. 4) to form an induced magnetic flux in the magnetic core (130). An induced electric field is generated by the induced magnetic flux formed in the magnetic core (130), and plasma is formed by the generated induced electric field.

[0079] Referring to FIG. 4, the power supply unit (170) produces alternating current power required for the operation of the external plasma reactor (110) and the exhaust pipe plasma reactor (210). The alternating current power produced by the power supply unit (170) is distributed through a power distributor (180) and supplied to the external plasma reactor (110) and the exhaust pipe plasma reactor (210). In this embodiment, the alternating current power produced by the power supply unit (170) is described as radio frequency power, which is a high frequency.

[0080] The power distributor (180) distributes high-frequency alternating current power produced by the power supply unit (170) and supplies it to the external plasma reactor (110) and the exhaust pipe plasma reactor (210), respectively, thereby enabling the external plasma reactor (110) and the exhaust pipe plasma reactor (210) to operate simultaneously. The power distributor (180) is controlled by a controller (190) to adjust the ratio of power supplied to the external plasma reactor (110) and power supplied to the exhaust pipe plasma reactor (210).

[0081] The controller (190) controls the operation of the power distributor (180). By controlling the operation of the power distributor (180) by the controller (190), the ratio of the power supplied to the external plasma reactor (110) and the power supplied to the exhaust pipe plasma reactor (210) from the alternating current power produced by the power supply unit (170) can be adjusted.

[0082] Although not shown in the drawing, a reactor impedance matching part that matches the impedance between the power supply unit (170) and the external plasma reactor (110) and an electrode impedance matching part that matches the impedance between the power supply unit (170) and the exhaust pipe plasma reactor (210) may be further provided.

[0083] In the above embodiment, it was described that the external plasma reactor (110) generates a semiconductor process plasma outside the semiconductor process chamber (201) and the gas supply unit (150) supplies a process gas, which is the source gas of the semiconductor process plasma, to the external plasma reactor (110). However, alternatively, the external plasma reactor (110) may generate a cleaning plasma for cleaning the semiconductor process chamber (201) and the gas supply unit (150) may supply a source gas for the cleaning plasma, and this also falls within the scope of the present invention.

[0084] FIG. 6 illustrates a schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 3A embodiment of the present invention as a block diagram. Referring to FIG. 6, the semiconductor manufacturing facility (300A) includes a semiconductor manufacturing facility (301) in which a semiconductor manufacturing process for manufacturing a semiconductor device is performed, a gas purification facility (303) for purifying gas discharged from the semiconductor manufacturing facility (301), an exhaust facility (305) for discharging gas from the semiconductor manufacturing facility (301) and flowing it to the gas purification facility (303), and a plasma equipment (309a) according to the 3A embodiment of the present invention for processing gas discharged from the semiconductor manufacturing facility (301) to prevent a decrease in gas fluidity.

[0085] The semiconductor manufacturing equipment (301) manufactures semiconductor devices by performing a semiconductor manufacturing process using various process gases. The semiconductor manufacturing equipment (301) is equipped with a semiconductor process chamber (302) in which a semiconductor manufacturing process using various process gases is performed. Although not illustrated, the semiconductor manufacturing equipment (301) further includes a process gas supply unit that supplies process gases required for the semiconductor process chamber (302) in various types.

[0086] The semiconductor process chamber (302) includes all types of semiconductor process chambers commonly used in the field of semiconductor manufacturing equipment technology to manufacture semiconductor devices. Residual gas generated in the semiconductor process chamber (302) is discharged to the outside by exhaust equipment (305) and purified by gas purification equipment (303).

[0087] In this embodiment, the semiconductor process performed in the semiconductor process chamber (302) may be a SiO2 process for forming a silicon oxide film on a substrate, a TiO2 process for forming a titanium dioxide film on a substrate, a ZrO2 process for forming a zirconia film on a substrate, an HfO2 process for forming a hafnium oxide film on a substrate, an Nb2O5 process for forming a niobium pentoxide film on a substrate, a Ta2O5 process for forming a tantalum pentoxide film on a substrate, and an ACL process for forming an amorphous carbon film (ACL: Amorphous Carbon Layer) on a substrate.

[0088] In the SiO2 process, a silicon dioxide (SiO2) film is formed on the substrate. In this embodiment, it is explained that a process gas containing Si(OC2H5)4 (TEOS: Tetraethyl Orthosilicate) is used as a precursor to produce silicon dioxide (SiO2) in the SiO2 process. After the SiO2 process is performed, exhaust gas containing unreacted TEOS is discharged from the semiconductor process chamber (302) by the exhaust equipment (305). The TEOS contained in the exhaust gas of the SiO2 process reacts with oxygen to produce SiO2 (silicon dioxide) powder as a byproduct, and the SiO2 powder accumulates in the exhaust equipment (305) and reduces the fluidity of the exhaust gas.

[0089] In the TiO2 process, a titanium dioxide (TiO2) film is formed on the substrate. In this embodiment, it is explained that a process gas containing Ti(OCH2CH3)4 (Titanium tetraetoxide) is used as a precursor to produce titanium dioxide (TiO2) in the TiO2 process. After the TiO2 process is performed, exhaust gas containing unreacted Ti(OCH2CH3)4 is discharged from the semiconductor process chamber (302) by the exhaust equipment (305). The Ti(OCH2CH3)4 contained in the exhaust gas of the TiO2 process reacts with oxygen to produce titanium dioxide (TiO2) powder as a byproduct, and the TiO2 powder accumulates in the exhaust equipment (305) to reduce the fluidity of the exhaust gas.

[0090] In the ZrO2 process, a zirconia (ZrO2) film is formed on the substrate. In this embodiment, it is explained that a process gas containing (C5H5)Zr(N(CH3)2)3 is used as a precursor to produce zirconia (ZrO2) in the ZrO2 process. After the ZrO2 process is performed, exhaust gas containing unreacted (C5H5)Zr(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the exhaust equipment (305). Oxygen reacts with the (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas of the ZrO2 process to produce zirconia (ZrO2) powder as a byproduct, and the ZrO2 powder accumulates in the exhaust equipment (305) to reduce the fluidity of the exhaust gas.

[0091] In the HfO2 process, a hafnium oxide (HfO2) film is formed on the substrate. In this embodiment, it is explained that a process gas containing (C5H5)Hf(N(CH3)2)3 is used as a precursor to generate hafnium oxide (HfO2) in the HfO2 process. After the HfO2 process is performed, exhaust gas containing unreacted (C5H5)Hf(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the exhaust equipment (305). Oxygen reacts with (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas of the HfO2 process to generate hafnium oxide (HfO2) powder as a byproduct, and the HfO2 powder accumulates in the exhaust equipment (305) to reduce the fluidity of the exhaust gas.

[0092] In the Nb2O5 process, a niobium pentoxide (Nb2O5) film is formed on the substrate. In this embodiment, it is explained that a process gas containing (C5H5)Nb(N(CH3)2)3 is used as a precursor to generate niobium pentoxide (Nb2O5) in the Nb2O5 process. After the Nb2O5 process is performed, exhaust gas containing unreacted (C5H5)Nb(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the exhaust equipment (305). Oxygen reacts with (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas of the Nb2O5 process to generate niobium pentoxide (Nb2O5) powder as a byproduct, and the Nb2O5 powder accumulates in the exhaust equipment (305) to reduce the fluidity of the exhaust gas.

[0093] In the Ta2O5 process, a tantalum pentoxide (Ta2O5) film is formed on the substrate. In this embodiment, it is explained that a process gas containing Ta(OC2H5)5 is used as a precursor to generate tantalum pentoxide (Ta2O5) in the Ta2O5 process. After the Ta2O5 process is performed, exhaust gas containing unreacted Ta(OC2H5)5 is discharged from the semiconductor process chamber (302) by the exhaust equipment (305). The Ta(OC2H5)5 contained in the exhaust gas of the Ta2O5 process reacts with oxygen to produce tantalum pentoxide (Ta2O5) powder as a byproduct, and the Ta2O5 powder accumulates in the exhaust equipment (305) to reduce the fluidity of the exhaust gas.

[0094] In the ACL process, an amorphous carbon layer (ACL) is formed on a substrate. The ACL process is performed by depositing amorphous carbon onto a substrate in a semiconductor process chamber (302). After the ACL process is performed, residual gas containing hydrogenated amorphous carbon (aC:H) is generated in the semiconductor process chamber (302). After the ACL process is performed, exhaust gas containing hydrogenated amorphous carbon (aC:H) is discharged from the semiconductor process chamber (302) by exhaust equipment (305). The hydrogenated amorphous carbon (aC:H) contained in the exhaust gas of the ACL process accumulates in the exhaust equipment (305) and reduces the fluidity of the exhaust gas.

[0095] The gas purification equipment (303) purifies the harmful components contained in the exhaust gas discharged from the semiconductor process chamber (302) by the exhaust equipment (305). The gas purification equipment (303) includes a scrubber (304) for treating the exhaust gas. The scrubber (304) includes all types of scrubbers commonly used to purify exhaust gas in the field of semiconductor manufacturing equipment technology.

[0096] The exhaust equipment (305) discharges residual gas generated after the process in the semiconductor process chamber (302) from the semiconductor process chamber (302). The exhaust equipment (305) is equipped with a vacuum pump (306), a chamber exhaust pipe (307) connecting the semiconductor process chamber (302) and the vacuum pump (306), and a pump exhaust pipe (308) extending downstream from the vacuum pump (306).

[0097] The vacuum pump (306) forms negative pressure on the side of the semiconductor process chamber (302) through a chamber exhaust pipe (307) connecting the semiconductor process chamber (302) and the vacuum pump (306) in order to discharge residual gas from the semiconductor process chamber (302). Since the vacuum pump (306) includes the configuration of a vacuum pump commonly used for gas discharge in the field of semiconductor manufacturing equipment technology, a detailed description thereof is omitted. Powder may accumulate on the vacuum pump (306), which can degrade the performance of the vacuum pump (306). According to the plasma equipment (309a) of the present invention, the accumulation of powder on the vacuum pump (306) is suppressed, thereby extending the MTBF of the vacuum pump (306).

[0098] The chamber exhaust pipe (307) connects the exhaust port of the semiconductor process chamber (302) and the intake port of the vacuum pump (306) between the semiconductor process chamber (302) and the vacuum pump (306). Due to the negative pressure formed by the vacuum pump (306), residual gas from the semiconductor process chamber (302) is discharged as exhaust gas through the chamber exhaust pipe (307). While the exhaust gas flows through the chamber exhaust pipe (307), it is processed by the plasma equipment (309a).

[0099] The pump exhaust pipe (308) extends downstream from the vacuum pump (306). The pump exhaust pipe (308) is connected to the discharge port of the vacuum pump (306) so that exhaust gas discharged from the vacuum pump (306) flows through it. A scrubber (304) is connected to the downstream end of the pump exhaust pipe (308) so that exhaust gas discharged from the vacuum pump (306) flows into the scrubber (304) through the pump exhaust pipe (308).

[0100] The plasma equipment (309a) processes the exhaust gas discharged from the semiconductor process chamber (302) to prevent a decrease in the fluidity of the exhaust gas discharged from the semiconductor process chamber (302). The plasma equipment (309a) comprises an exhaust pipe plasma reactor (310) that generates a plasma reaction for exhaust gas discharged from a semiconductor process chamber (302), a powder collection trap (348) installed on the chamber exhaust pipe (307) to collect powder, a remote plasma reactor (350) that generates a reaction active species supplied to the powder collection trap (348) using plasma, a remote plasma source gas supply unit (390) that supplies gas to the remote plasma reactor (350), a power supply unit (170) that produces power required for the exhaust pipe plasma reactor (310) and the remote plasma reactor (350), a power distributor (180a) that distributes power produced by the power supply unit (170) and supplies it to the exhaust pipe plasma reactor (310) and the remote plasma reactor (350), and a controller (190a) that controls the operation of the power distributor (180a).

[0101] The exhaust pipe plasma reactor (310) is installed on the chamber exhaust pipe (307) to generate a plasma reaction for the exhaust gas discharged from the semiconductor process chamber (302). The exhaust pipe plasma reactor (310) basically performs the function of primarily removing the target components contained in the exhaust gas discharged from the semiconductor process chamber (302). In this embodiment, the exhaust pipe plasma reactor (310) is described as an inductively coupled plasma reactor utilizing inductively coupled plasma (ICP). Although the exhaust pipe plasma reactor (310) is described as utilizing inductively coupled plasma in this embodiment, the present invention is not limited thereto. In the present invention, the exhaust pipe plasma reactor includes any type of plasma reactor that generates a plasma reaction (for example, a plasma reactor utilizing capacitively coupled plasma (CCP)), and this also falls within the scope of the present invention.

[0102] FIG. 7 shows a schematic configuration of an exhaust pipe plasma reactor (310) as a cross-sectional view. Referring to FIG. 7, the exhaust pipe plasma reactor (310) comprises a reaction chamber (320), a magnetic core (330) arranged to surround the reaction chamber (320), an igniter (340) for plasma ignition, and a coil (not shown) wound on the magnetic core (330) and supplied with power from a power supply unit (170).

[0103] The reaction chamber (320) is a toroidal-shaped chamber and is equipped with a gas inlet (321), a gas outlet (323) located spaced apart from the gas inlet (321), and a plasma reaction section (325) connecting the gas inlet (321) and the gas outlet (323) where a plasma reaction occurs.

[0104] The gas inlet section (321) is in the form of a short tube extending along a straight extension axis (X3), and the tip of the gas inlet section (321) is open to form an inlet (322) through which exhaust gas is introduced.

[0105] The gas discharge section (323) is a short tube-shaped structure located coaxially spaced from the gas inlet section (321) on the extension axis (X2), and the rear end of the gas discharge section (323) is open to form an outlet (324) through which exhaust gas is discharged.

[0106] The plasma reaction section (325) connects the separated gas inlet section (321) and gas outlet section (323) and forms a plasma treatment area (A3) inside. The plasma reaction section (325) is equipped with a first connecting pipe section (326) and a second connecting pipe section (327) positioned separately on both sides with the extension axis (X3) in between. The first connecting pipe section (326) and the second connecting pipe section (327) extend generally parallel to the extension axis (X3) and communicate with the gas inlet section (321) and the gas outlet section (323). Accordingly, plasma is generated in the plasma reaction section (325) along a ring-shaped discharge loop (R3) as shown by the dashed line. After the exhaust gas introduced through the gas inlet (322) is treated by the plasma generated in the plasma reaction section (325), it is discharged through the outlet (324).

[0107] In this embodiment, the reaction chamber (320) is described as being configured by combining a first chamber member (320a) comprising the entire gas inlet section (321), a part of the first connecting pipe section (326) connected to the gas inlet section (321), and a part of the second connecting pipe section (327), and a second chamber member (320b) comprising a gas outlet section (323), a part of the first connecting pipe section (326) connected to the gas outlet section (323), and a part of the second connecting pipe section (327), but the present invention is not limited thereto.

[0108] The magnetic core (330) is positioned to surround the reaction chamber (320). In this embodiment, the magnetic core (330) is described as a ferrite core commonly used in inductively coupled plasma generators. The magnetic core (330) is shown in a perspective view in FIG. 8. Referring to FIG. 7 and FIG. 8, the magnetic core (330) has a ring-shaped ring portion (331) that surrounds the plasma reaction portion (325) of the reaction chamber (320) from the outside, and a connecting portion (335) that crosses the inner region of the ring portion (331).

[0109] The ring portion (331) is in the shape of a rectangular ring and is positioned perpendicular to the extension axis (X1) to surround the plasma reaction portion (325) of the reaction chamber (320) from the outside. The rectangular ring portion (331) has two opposing long sides (332a, 332b) and two opposing short sides (333a, 333b).

[0110] The connecting portion (335) extends in a straight line to connect the two opposing long side portions (332a, 332b) of the ring portion (331). Both ends of the connecting portion (335) are connected to the longitudinal center of each of the two long side portions (332a, 332b). The connecting portion (335) is positioned to pass through a gap (328) formed between the first connecting portion (326) and the second connecting portion (327) of the reaction chamber (320). By the connecting portion (335), the internal region of the ring portion (331) is separated into a first through hole (336) and a second through hole (337), through which the first connecting portion (326) of the reaction chamber (320) passes and through which the second connecting portion (327) of the reaction chamber (320) passes. Accordingly, the magnetic core (330) is formed to surround the first connecting pipe section (326) and the second connecting pipe section (327) of the reaction chamber (320) from the outside, respectively.

[0111] Referring to FIG. 7, the igniter (340) ignites the plasma by receiving high-voltage power from an external source. In this embodiment, the igniter (340) is described as being located adjacent to the gas inlet (321) in the plasma reaction section (325) of the reaction chamber (320), but the present invention is not limited thereto.

[0112] A coil (not shown) is wound around a magnetic core (330) and connected to a power supply (170 in FIG. 6). The coil (not shown) receives alternating current power of radio frequency through the power supply (170 in FIG. 6) to form an induced magnetic flux in the magnetic core (330). An induced electric field is generated by the induced magnetic flux formed in the magnetic core (330), and plasma is formed by the generated induced electric field.

[0113] Referring to FIG. 6, a powder collection trap (348) is installed downstream of the exhaust pipe plasma reactor (310) on the chamber exhaust pipe (307) to collect powder contained in the exhaust gas discharged from the exhaust pipe plasma reactor (310). Since the powder collection trap (348) may be a commonly used type (e.g., a particle collection device described in Registered Patent No. 10-3480237), a detailed description thereof is omitted. The powder collected in the powder collection trap (348) reacts with a reaction active species generated in the remote plasma reactor (350) to become gas. The powder collection trap (348) may be combined with the remote plasma reactor (350) to form an integral unit. The powder collection trap (348) may be equipped with a cooling device.

[0114] The remote plasma reactor (350) decomposes the source gas supplied from the remote plasma source gas supply unit (390) using plasma to generate a remote plasma gas containing reactive species. The remote plasma gas containing reactive species generated in the remote plasma reactor (350) can additionally remove the target components that were not removed in the exhaust pipe plasma reactor (310). The remote plasma gas containing reactive species generated in the remote plasma reactor (350) is supplied to the powder collection trap (348). In this embodiment, the remote plasma reactor (350) uses plasma to generate an excited fluorine atom (F), which is reactive fluorine, as a reactive species. * ) or excited oxygen atoms (O) that are reactive oxygen * Generates ). In this embodiment, the excited fluorine atom (F * ) is explained as being generated by decomposing nitrogen trifluoride (NF3), which is a source gas supplied from a remote plasma source gas supply unit (390), by plasma in a remote plasma reactor (350). In this embodiment, excited oxygen atoms (O * It is explained that oxygen (O2), which is a source gas supplied from a gas supply unit (390), is decomposed by plasma in a plasma reactor (310) to produce the plasma. In this embodiment, the remote plasma reactor (350) is described as being combined with a powder collection trap (348) to form a single unit, but the invention is not limited thereto.

[0115] In this embodiment, the remote plasma reactor (350) is described as an inductively coupled plasma reactor utilizing inductively coupled plasma (ICP). Although the remote plasma reactor (350) in this embodiment is described as utilizing inductively coupled plasma, the present invention is not limited thereto. In the present invention, the remote plasma reactor includes any type of plasma reactor that generates a plasma reaction (e.g., a plasma reactor utilizing capacitively coupled plasma (CCP)), and this also falls within the scope of the present invention.

[0116] FIG. 9 shows a schematic configuration of a remote plasma reactor (350) as a cross-sectional view. Referring to FIG. 9, the remote plasma reactor (350) comprises a reaction chamber (360), a magnetic core (370) arranged to surround the reaction chamber (360), an igniter (378) for plasma ignition, and a coil (not shown) wound on the magnetic core (370) and supplied with power from a power supply (170 in FIG. 6).

[0117] The reaction chamber (360) is a toroidal-shaped chamber and is equipped with a gas inlet (361), a gas outlet (363) located spaced apart from the gas inlet (361), and a plasma reaction section (365) connecting the gas inlet (361) and the gas outlet (363) where a plasma reaction occurs. The reaction chamber (360) decomposes NF3 gas, which is a source gas supplied from a remote plasma source gas supply unit (390 in FIG. 6), using plasma to produce excited fluorine atoms (F3), which are reaction active species. * ) to generate, or decompose O2 gas, which is the source gas supplied from a remote plasma source gas supply unit (390 in FIG. 6), using plasma to produce excited oxygen atoms (O₂), which are reaction-active species. * Creates ).

[0118] The gas inlet section (361) is in the form of a short tube extending along a straight extension axis (X4), and the tip of the gas inlet section (361) is open to form an inlet (362) through which gas is introduced. The inlet (362) is connected to a remote plasma source gas supply unit (390 in FIG. 6) through a gas inlet pipe (386). Nitrogen trifluoride (NF3) or oxygen (O2) supplied by the remote plasma source gas supply unit (390 in FIG. 6) is introduced into the reaction chamber (360) through the inlet (362).

[0119] The gas discharge section (363) is in the form of a short tube located coaxially spaced from the gas inlet section (361) on the extension axis (X4), and the rear end of the gas discharge section (363) is open to form an outlet (364) through which gas is discharged. The gas discharge section (363) is directly connected to a powder collection trap (348 in FIG. 6), so that remote plasma gas containing reaction active species generated in the remote plasma reactor (350) is introduced into the powder collection trap (348 in FIG. 6) through the outlet (364).

[0120] The plasma reaction section (365) connects the separated gas inlet section (361) and gas outlet section (363) and forms a plasma reaction region (A4) in which a thermal reaction and a plasma reaction with respect to the gas occur. The plasma reaction section (365) is equipped with a first connecting pipe section (366) and a second connecting pipe section (367) located on each side separated by an extension axis (X4). The first connecting pipe section (366) and the second connecting pipe section (367) extend parallel to the extension axis (X4) and communicate with the gas inlet section (361) and the gas outlet section (363). Accordingly, plasma is generated in the plasma reaction section (365) along a ring-shaped discharge loop (R4) as shown by the dashed line.

[0121] The gas introduced through the inlet (362) is decomposed by the plasma formed in the plasma reaction zone (A4) to produce reaction active species. As illustrated, when nitrogen trifluoride (NF3) is introduced as a source gas through the inlet (362), the nitrogen trifluoride (NF3) is decomposed in the plasma reaction zone (A4) to produce excited fluorine atoms (F3), which are reaction active species. * It generates ) and fluorine (F2). Specifically, in the plasma reaction region (A4), nitrogen trifluoride (NF3) produces nitrogen (N2), fluorine (F2), and excited nitrogen atoms (N2). * ), excited fluorine atom (F * It can be decomposed into components including ) and electrons (e). Although not illustrated, when oxygen (O2) is introduced through the inlet (362), the oxygen (O2) is decomposed in the plasma reaction zone (A4) to form excited oxygen atoms (O2), which are reaction active species. * Creates ).

[0122] In this embodiment, the reaction chamber (360) is described as being composed of a first chamber member (360a) and a second chamber member (360b) combined. The first chamber member (360a) includes the entire gas inlet section (361), a part of the first connecting pipe section (366) connected to the gas inlet section (361), and a part of the second connecting pipe section (367). The second chamber member (360b) includes the entire gas outlet section (363), a part of the first connecting pipe section (366) connected to the gas outlet section (363), and a part of the second connecting pipe section (367).

[0123] The magnetic core (370) is positioned to surround the reaction chamber (360). In this embodiment, the magnetic core (370) is described as a ferrite core commonly used in inductively coupled plasma generators. The magnetic core (370) is shown in a perspective view in FIG. 10. Referring to FIG. 9 and FIG. 10, the magnetic core (370) has a ring-shaped ring portion (371) that surrounds the plasma reaction portion (365) of the reaction chamber (360) from the outside, and a connecting portion (375) that crosses the inner region of the ring portion (371).

[0124] The ring portion (371) is generally in the shape of a rectangular ring and is positioned perpendicular to the extension axis (X4) to surround the plasma reaction portion (365) of the reaction chamber (360) from the outside. The rectangular ring portion (371) has two opposing long sides (372a, 372b) and two opposing short sides (373a, 373b).

[0125] The connecting portion (375) extends in a straight line to connect the two opposing long side portions (372a, 372b) of the ring portion (371). Both ends of the connecting portion (375) are connected to the longitudinal center of each of the two long side portions (372a, 372b). The connecting portion (375) is positioned to pass through a gap (368) formed between the first connecting portion (366) and the second connecting portion (367) of the reaction chamber (360). By the connecting portion (365), the internal region of the ring portion (371) is separated into a first through hole (376) and a second through hole (377), through which the first connecting portion (366) of the reaction chamber (360) passes and through which the second connecting portion (367) of the reaction chamber (360) passes. Accordingly, the magnetic core (370) is formed to surround the first connecting pipe section (366) and the second connecting pipe section (367) of the reaction chamber (360) from the outside, respectively.

[0126] Referring to FIG. 9, the igniter (378) receives high-voltage power from a power supply unit (170 in FIG. 6) to ignite the plasma. In this embodiment, the igniter (378) is described as being located adjacent to the gas inlet (361) in the plasma reaction section (365) of the reaction chamber (360), but the present invention is not limited thereto.

[0127] A coil (not shown) is wound around a magnetic core (370) and connected to a power supply (170 in FIG. 6). The coil (not shown) receives alternating current power of radio frequency through the power supply (170 in FIG. 6) to form an induced magnetic flux in the magnetic core (370). An induced electric field is generated by the induced magnetic flux formed in the magnetic core (370), and plasma is formed by the generated induced electric field.

[0128] Referring to FIG. 6, the remote plasma source gas supply unit (390) stores a source gas for remote plasma, which is a source gas for reaction active species generated by plasma in the remote plasma reactor (350), and supplies the stored source gas for remote plasma to the remote plasma reactor (390) through the gas inlet pipe (386). In this embodiment, the remote plasma source gas supply unit (390) is described as supplying nitrogen trifluoride (NF3) or oxygen (O2) to the remote plasma reactor (350) as the source gas for remote plasma.

[0129] The power supply unit (170) produces alternating current power required for the operation of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350). The alternating current power produced by the power supply unit (170) is distributed through a power distributor (180a) and supplied to the exhaust pipe plasma reactor (310) and the remote plasma reactor (350). In this embodiment, the alternating current power produced by the power supply unit (170) is described as radio frequency power, which is a high frequency.

[0130] The power distributor (180a) distributes high-frequency alternating current power produced by the power supply unit (170) and supplies it to the exhaust pipe plasma reactor (310) and the remote plasma reactor (350), respectively, thereby enabling the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) to operate simultaneously. The power distributor (180a) is controlled by the controller (190a) to adjust the ratio of power supplied to the exhaust pipe plasma reactor (310) and power supplied to the remote plasma reactor (350).

[0131] The controller (190a) controls the operation of the power distributor (180a). By controlling the operation of the power distributor (180a) by the controller (190a), the ratio of the power supplied to the exhaust pipe plasma reactor (310) and the power supplied to the remote plasma reactor (350) from the AC power produced by the power supply unit (170) can be adjusted.

[0132] Although not shown in the drawing, a reactor impedance matching part that matches the impedance between the power supply unit (170) and the exhaust pipe plasma reactor (310) and an electrode impedance matching part that matches the impedance between the power supply unit (170) and the remote plasma reactor (350) may be further provided.

[0133] Hereinafter, the operation of the plasma equipment (309a) according to various processes performed in the process chamber (302) will be explained in detail.

[0134] First, the operation of the plasma equipment (309a) when a SiO2 process is performed using a process gas containing a Si-containing precursor in a process chamber (302) is described as follows. In this embodiment, Si(OC2H5)4 (TEOS: Tetraethyl Orthosilicate) is used as the Si-containing precursor. After the SiO2 process is performed in the process chamber (302), exhaust gas containing unreacted TEOS is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. By the operation of the exhaust pipe plasma reactor (310), the TEOS contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce SiO2, which is a stabilized powder. The SiO2 powder generated in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * ) can be generated. Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310) and the remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the SiO2 powder is excited fluorine atoms (F *It reacts with ) to gasify and form SiF4. Accordingly, it is possible to prevent the SiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0135] Next, the operation of the plasma equipment (309a) is described as follows when a TiO2 process is performed in a process chamber (302) using a process gas containing a Ti-containing precursor. In this embodiment, it is described that Ti(OCH2CH3)4 is used as the Ti-containing precursor. After the TiO2 process is performed in the process chamber (302), exhaust gas containing unreacted Ti(OCH2CH3)4 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. By the operation of the exhaust pipe plasma reactor (310), the Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce TiO2, which is a stabilized powder. The TiO2 powder generated in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * ) can be generated. Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310) and the remote plasma reactor (350). *) is supplied to the powder collection trap (348). In the powder collection trap (348), the TiO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form TiF4. Accordingly, it is possible to prevent the TiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0136] Next, the operation of the plasma equipment (309a) is described as follows when a ZrO2 process is performed in a process chamber (302) using a process gas containing a Zr-containing precursor. In this embodiment, (C5H5)Zr(N(CH3)2)3 is used as the Zr-containing precursor. After the ZrO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Zr(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) by the operation of the exhaust pipe plasma reactor (310) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce ZrO2, which is a stabilized powder. The ZrO2 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). In addition, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * ) can be generated. Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. *Generates ) excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310) and the remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the ZrO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form ZrF4. Accordingly, it is possible to prevent the ZrO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0137] Next, the operation of the plasma equipment (309a) is described as follows when an HfO2 process is performed in a process chamber (302) using a process gas containing an Hf-containing precursor. In this embodiment, (C5H5)Hf(N(CH3)2)3 is used as the Hf-containing precursor. After the HfO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Hf(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) by the operation of the exhaust pipe plasma reactor (310) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce HfO2, which is a stabilized powder. The HfO2 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). In addition, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. *) can be generated. Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310) and the remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the HfO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form HfF4. Accordingly, it is possible to prevent HfO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0138] Next, the operation of the plasma equipment (309a) is described as follows when an Nb2O5 process is performed in a process chamber (302) using a process gas containing an Nb-containing precursor. In this embodiment, (C5H5)Nb(N(CH3)2)3 is used as the Nb-containing precursor. After the Nb2O5 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Nb(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) by the operation of the exhaust pipe plasma reactor (310) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce Nb2O5, which is a stabilized powder. The Nb2O5 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). In addition, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * ) can be generated. Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310) and the remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the Nb2O5 powder is excited fluorine atoms (F *It reacts with ) to gasify and form NbF5. Accordingly, it is possible to prevent the Nb2O5 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0139] Next, the operation of the plasma equipment (309a) is described as follows when a Ta2O5 process is performed in a process chamber (302) using a process gas containing a Ta-containing precursor. In this embodiment, Ta(OC2H5)5 is used as the Ta-containing precursor. After the Ta2O5 process is performed in the process chamber (302), exhaust gas containing unreacted Ta(OC2H5)5 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. By the operation of the exhaust pipe plasma reactor (310), the Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce Ta2O5, which is a stabilized powder. The Ta2O5 powder generated in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * ) can be generated. Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310) and the remote plasma reactor (350). *) is supplied to the powder collection trap (348). In the powder collection trap (348), the Ta2O5 powder is excited fluorine atoms (F * It reacts with ) to gasify and form TaF5. Accordingly, Ta2O5 powder can be prevented from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0140] Next, the operation of the plasma equipment (309a) when the ACL process is performed in the process chamber (302) is described as follows. After the ACL process is performed in the process chamber (302), exhaust gas containing hydrogenated amorphous carbon (aC:H) is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. The hydrogenated amorphous carbon (aC:H) contained in the exhaust gas discharged from the semiconductor process chamber (302) by the operation of the exhaust pipe plasma reactor (310) is carbon atoms (C) excited by the plasma reaction in the exhaust pipe plasma reactor (310). * ) and excited hydrogen atoms (H * It is decomposed into ). Excited carbon atoms (C) generated in the exhaust pipe plasma reactor (310). * ) and excited hydrogen atoms (H * ) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and enters the powder collection trap (348). In addition, the exhaust pipe plasma reactor (310) decomposes the O2 gas contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited oxygen atoms (O2), which are reaction active species. * ) can be generated. Oxygen (O2) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the O2 gas through a plasma reaction to produce excited oxygen atoms (O) which are reaction active species.* Generates ) excited oxygen atoms (O) generated in the exhaust pipe plasma reactor (310) and the remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the excited carbon atom (C) * ), excited hydrogen atom (H * ) and excited oxygen atoms (O * A substitution (oxidation) reaction occurs between them to produce carbon dioxide gas (CO2), carbon monoxide gas (CO), and water vapor (H2O). Accordingly, hydrogenated amorphous carbon (aC:H) can be prevented from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0141] FIG. 11 illustrates, as a block diagram, the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 3B embodiment of the present invention. Referring to FIG. 11, the semiconductor manufacturing facility (300B) includes semiconductor manufacturing equipment (301) in which a semiconductor manufacturing process for manufacturing semiconductor devices is performed, gas purification equipment (303) for purifying gas discharged from the semiconductor manufacturing equipment (301), exhaust equipment (305) for discharging gas from the semiconductor manufacturing equipment (301) and flowing it to the gas purification equipment (303), and plasma equipment (309b) according to the 3B embodiment of the present invention for processing gas discharged from the semiconductor manufacturing equipment (301) to prevent a decrease in gas fluidity. The remaining components of the semiconductor manufacturing facility (300B), excluding the plasma equipment (309b), are generally the same as those of the semiconductor manufacturing facility (300A) shown in FIG. 6.

[0142] The plasma equipment (309b) comprises an exhaust pipe plasma reactor (310) that generates a plasma reaction for exhaust gas discharged from a semiconductor process chamber (302), a powder collection trap (348) installed on the chamber exhaust pipe (307) to collect powder, a remote plasma reactor (350) that generates a reaction active species supplied to the powder collection trap (348) using plasma, a remote plasma source gas supply unit (390) that supplies gas to the remote plasma reactor (350), a power supply unit (170) that produces power required for the operation of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350), a switch unit (180b) that electrically connects the power supply unit (170) to either the exhaust pipe plasma reactor (310) or the remote plasma reactor (350), and a control unit (190b) that controls the operation of the switch unit (180b). The remaining components of the plasma equipment (309b), excluding the switch device (180b) and the control unit (190b), are generally the same as the plasma equipment (309a) shown in FIG. 6.

[0143] The switch device (180b) electrically connects the power supply unit (170) to either the exhaust pipe plasma reactor (310) or the remote plasma reactor (350). Depending on the operating state of the switch device (180b), the alternating current power produced by the power supply unit (170) is supplied to the exhaust pipe plasma reactor (310) or to the remote plasma reactor (350). The operation of the switch device (180b) is controlled by the control unit (190b).

[0144] The control unit (190b) controls the operation of the switch device (180b). By controlling the operation of the switch device (180b) by the control unit (190b), the alternating current power produced by the power supply unit (170) is selectively supplied to only one of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350).

[0145] Although not shown in the drawing, an impedance matching unit may be further provided to match the impedance between the power supply unit (170) and the exhaust pipe plasma reactor (310) or the impedance between the power supply unit (170) and the remote plasma reactor (350) after the power supply unit (170) is electrically connected to either the exhaust pipe plasma reactor (310) or the remote plasma reactor (350) by the switch unit (180b).

[0146] Hereinafter, the operation of the plasma equipment (309b) according to various processes performed in the process chamber (302) will be explained in detail.

[0147] First, the operation of the plasma equipment (309b) when a SiO2 process is performed using a process gas containing a Si-containing precursor in a process chamber (302) is described as follows. In this embodiment, TEOS is used as the Si-containing precursor. After the SiO2 process is performed in the process chamber (302), exhaust gas containing unreacted TEOS is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0148] When only the exhaust pipe plasma reactor (310) is operating, the TEOS contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce SiO2, which is a stabilized powder. The SiO2 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * ) can be generated. Excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the SiO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form SiF4. Accordingly, it is possible to prevent the SiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0149] When only the remote plasma reactor (350) is operated, TEOS contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce SiO2 powder, and the produced SiO2 powder is collected in the powder collection trap (348). Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the SiO2 powder is excited fluorine atoms (F *It reacts with ) to gasify and form SiF4. Accordingly, it is possible to prevent the SiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0150] Next, the operation of the plasma equipment (309b) is described as follows when a TiO2 process is performed in a process chamber (302) using a process gas containing a Ti-containing precursor. In this embodiment, it is described that Ti(OCH2CH3)4 is used as the Ti-containing precursor. After the TiO2 process is performed in the process chamber (302), exhaust gas containing unreacted Ti(OCH2CH3)4 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0151] When only the exhaust pipe plasma reactor (310) is operating, Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce TiO2, which is a stabilized powder. The TiO2 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * ) can be generated. Excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the TiO2 powder is excited fluorine atoms (F *It reacts with ) to gasify and form TiF4. Accordingly, it is possible to prevent the TiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0152] When only the remote plasma reactor (350) is operated, Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce TiO2 powder, and the produced TiO2 powder is collected in the powder collection trap (348). Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the TiO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form TiF4. Accordingly, it is possible to prevent the TiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0153] Next, the operation of the plasma equipment (309b) is described as follows when a ZrO2 process is performed in a process chamber (302) using a process gas containing a Zr-containing precursor. In this embodiment, (C5H5)Zr(N(CH3)2)3 is used as the Zr-containing precursor. After the ZrO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Zr(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0154] When only the exhaust pipe plasma reactor (310) is operating, (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce ZrO2, which is a stabilized powder. The ZrO2 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * ) can be generated. Excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the ZrO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form ZrF4. Accordingly, it is possible to prevent the ZrO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0155] When only the remote plasma reactor (350) is operated, (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce ZrO2 powder, and the produced ZrO2 powder is collected in the powder collection trap (348). Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the ZrO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form ZrF4. Accordingly, it is possible to prevent the ZrO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0156] Next, the operation of the plasma equipment (309b) is described as follows when an HfO2 process is performed in the process chamber (302) using a process gas containing an Hf-containing precursor. In this embodiment, (C5H5)Hf(N(CH3)2)3 is used as the Hf-containing precursor. After the HfO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Hf(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0157] When only the exhaust pipe plasma reactor (310) is operating, (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce HfO2, which is a stabilized powder. The HfO2 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * ) can be generated. Excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the HfO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form HfF4. Accordingly, it is possible to prevent HfO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0158] When only the remote plasma reactor (350) is operated, (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to form HfO2 powder, and the generated HfO2 powder is collected in the powder collection trap (348). Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the HfO2 powder is excited fluorine atoms (F *It reacts with ) to gasify and form HfF4. Accordingly, it is possible to prevent HfO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0159] Next, the operation of the plasma equipment (309b) is described as follows when an Nb2O5 process is performed in a process chamber (302) using a process gas containing an Nb-containing precursor. In this embodiment, (C5H5)Nb(N(CH3)2)3 is used as the Nb-containing precursor. After the Nb2O5 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Nb(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0160] When only the exhaust pipe plasma reactor (310) is operating, (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce Nb2O5, which is a stabilized powder. The Nb2O5 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * ) can be generated. Excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the Nb2O5 powder is excited fluorine atoms (F* It reacts with ) to gasify and form NbF5. Accordingly, it is possible to prevent the Nb2O5 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0161] When only the remote plasma reactor (350) is operated, (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce Nb2O5 powder, and the produced Nb2O5 powder is collected in the powder collection trap (348). Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the Nb2O5 powder is excited fluorine atoms (F * It reacts with ) to gasify and form NbF5. Accordingly, it is possible to prevent the Nb2O5 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0162] Next, the operation of the plasma equipment (309b) is described as follows when a Ta2O5 process is performed in a process chamber (302) using a process gas containing a Ta-containing precursor. In this embodiment, Ta(OC2H5)5 is used as the Ta-containing precursor. After the Ta2O5 process is performed in the process chamber (302), exhaust gas containing unreacted Ta(OC2H5)5 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0163] When only the exhaust pipe plasma reactor (310) is operating, Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce Ta2O5, which is a stabilized powder. The Ta2O5 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * ) can be generated. Excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the Ta2O5 powder is excited fluorine atoms (F * It reacts with ) to gasify and form TaF5. Accordingly, Ta2O5 powder can be prevented from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0164] When only the remote plasma reactor (350) is operated, Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce Ta2O5 powder, and the produced Ta2O5 powder is collected in the powder collection trap (348). Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the Ta2O5 powder is excited fluorine atoms (F * It reacts with ) to gasify and form TaF5. Accordingly, Ta2O5 powder can be prevented from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0165] FIG. 12 illustrates, as a block diagram, the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 4A embodiment of the present invention. Referring to FIG. 12, the semiconductor manufacturing facility (400A) includes semiconductor manufacturing equipment (301) in which a semiconductor manufacturing process for manufacturing semiconductor devices is performed, gas purification equipment (303) for purifying gas discharged from the semiconductor manufacturing equipment (301), exhaust equipment (305) for discharging gas from the semiconductor manufacturing equipment (301) and flowing it to the gas purification equipment (303), and plasma equipment (409a) according to the 4th embodiment of the present invention for pre-treating the gas discharged from the semiconductor manufacturing equipment (301) to prevent a decrease in gas fluidity. The remaining components of the semiconductor manufacturing facility (400A), excluding the plasma equipment (409a), are generally the same as those of the semiconductor manufacturing facility (300A) shown in FIG. 6.

[0166] The plasma equipment (409a) comprises an exhaust pipe plasma reactor (310) that generates a plasma reaction for exhaust gas discharged from a semiconductor process chamber (302), a cooler (448) installed on the chamber exhaust pipe (307), a remote plasma reactor (350) that generates a reaction active species supplied to the chamber exhaust pipe (307) using plasma, a remote plasma source gas supply unit (390) that supplies gas to the remote plasma reactor (350), a power supply unit (170) that produces power required for the exhaust pipe plasma reactor (310) and the remote plasma reactor (350), a power distributor (180a) that distributes the power produced by the power supply unit (170) and supplies it to the exhaust pipe plasma reactor (310) and the remote plasma reactor (350), and a controller (190a) that controls the operation of the power distributor (180a).

[0167] The exhaust pipe plasma reactor (310) is largely identical to the configuration of the exhaust pipe plasma reactor (310) described in the embodiment shown in FIG. 6, so a detailed description thereof is omitted here.

[0168] A cooler (448) is installed downstream of the exhaust pipe plasma reactor (310) on the chamber exhaust pipe (307) to lower the temperature of the exhaust gas. The cooler (448) prevents damage to the equipment due to overheating. In this embodiment, the cooler (448) is described as using a water-cooling type that uses cooling water, but an air-cooling type may also be used, and this is also within the scope of the present invention.

[0169] The remote plasma reactor (350) is largely identical to the configuration of the remote plasma reactor (350) described in the embodiment illustrated in FIG. 6, so a detailed description thereof is omitted here. The gas discharge section (363 in FIG. 9) of the remote plasma reactor (350) is connected to the chamber exhaust pipe (307) through the discharge pipe (487). The discharge pipe (487) is directly connected from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (310) and the cooler (448). Accordingly, the reaction active species generated in the remote plasma reactor (350) are discharged through the discharge port (364), flow along the discharge pipe (487), and are directly introduced into the chamber exhaust pipe (307) in the section between the exhaust pipe plasma reactor (310) and the cooler (448).

[0170] The remote plasma source gas supply unit (390) is largely identical to the configuration of the remote plasma source gas supply unit (390) described in the embodiment shown in FIG. 6, so a detailed description thereof is omitted here.

[0171] The power supply unit (170) produces alternating current power required for the operation of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350). The alternating current power produced by the power supply unit (170) is distributed through a power distributor (180a) and supplied to the exhaust pipe plasma reactor (310) and the remote plasma reactor (350). In this embodiment, the alternating current power produced by the power supply unit (170) is described as radio frequency power, which is a high frequency.

[0172] The power distributor (180a) distributes high-frequency alternating current power produced by the power supply unit (170) and supplies it to the exhaust pipe plasma reactor (310) and the remote plasma reactor (350), respectively, thereby enabling the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) to operate simultaneously. The power distributor (180a) is controlled by the controller (190a) to adjust the ratio of power supplied to the exhaust pipe plasma reactor (310) and power supplied to the remote plasma reactor (350).

[0173] The controller (190a) controls the operation of the power distributor (180a). By controlling the operation of the power distributor (180a) by the controller (190a), the ratio of the power supplied to the exhaust pipe plasma reactor (310) and the power supplied to the remote plasma reactor (350) from the AC power produced by the power supply unit (170) can be adjusted.

[0174] Although not shown in the drawing, a reactor impedance matching part that matches the impedance between the power supply unit (170) and the exhaust pipe plasma reactor (310) and an electrode impedance matching part that matches the impedance between the power supply unit (170) and the remote plasma reactor (350) may be further provided.

[0175] Hereinafter, the operation of the plasma equipment (409a) according to various processes performed in the process chamber (302) will be explained in detail.

[0176] First, the operation of the plasma equipment (409a) is described as follows when a SiO2 process is performed using a process gas containing TEOS (Si(OC2H5)4) in the process chamber (302). After the SiO2 process is performed in the process chamber (302), exhaust gas containing unreacted TEOS is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. By operating the exhaust pipe plasma reactor (310), the TEOS contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce SiO2, which is a stabilized powder. The SiO2 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310) and flows along the chamber exhaust pipe (307). Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (310) and the cooler (448). The SiO2 powder generated in the exhaust pipe plasma reactor (310) is excited fluorine atoms (F) injected into the chamber exhaust pipe (307). * It reacts with ) to gasify and form SiF4. Accordingly, it is possible to prevent the SiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0177] Next, the operation of the plasma equipment (409a) is described as follows when a TiO2 process is performed using a process gas containing Ti(OCH2CH3)4 in the process chamber (302). After the TiO2 process is performed in the process chamber (302), exhaust gas containing unreacted Ti(OCH2CH3)4 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. By the operation of the exhaust pipe plasma reactor (310), the Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce TiO2, which is a stabilized powder. The TiO2 powder generated in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310) and flows along the chamber exhaust pipe (307). Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (310) and the cooler (448). The TiO2 powder generated in the exhaust pipe plasma reactor (310) is injected into the chamber exhaust pipe (307) by excited fluorine atoms (F * It reacts with ) to gasify and form TiF4. Accordingly, it is possible to prevent the TiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0178] Next, the operation of the plasma equipment (409a) is described as follows when a ZrO2 process is performed using a process gas containing (C5H5)Zr(N(CH3)2)3 in the process chamber (302). After the ZrO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Zr(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. By the operation of the exhaust pipe plasma reactor (310), the (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce ZrO2, which is a stabilized powder. The ZrO2 powder generated in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310) and flows along the chamber exhaust pipe (307). Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (310) and the cooler (448). The ZrO2 powder generated in the exhaust pipe plasma reactor (310) is injected into the chamber exhaust pipe (307) by excited fluorine atoms (F * It reacts with ) to gasify and form ZrF4. Accordingly, it is possible to prevent the ZrO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0179] Next, the operation of the plasma equipment (409a) is described as follows when an HfO2 process is performed using a process gas containing (C5H5)Hf(N(CH3)2)3 in the process chamber (302). After the HfO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Hf(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. By the operation of the exhaust pipe plasma reactor (310), the (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce HfO2, which is a stabilized powder. HfO2 powder generated in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310) and flows along the chamber exhaust pipe (307). Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (310) and the cooler (448). The HfO2 powder generated in the exhaust pipe plasma reactor (310) is excited fluorine atoms (F) injected into the chamber exhaust pipe (307). * It reacts with ) to gasify and form HfF4. Accordingly, it is possible to prevent HfO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0180] Next, the operation of the plasma equipment (409a) is described as follows when an Nb2O5 process is performed using a process gas containing (C5H5)Nb(N(CH3)2)3 in the process chamber (302). After the Nb2O5 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Nb(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. By the operation of the exhaust pipe plasma reactor (310), the (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce Nb2O5, which is a stabilized powder. The Nb2O5 powder generated in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310) and flows along the chamber exhaust pipe (307). Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (310) and the cooler (448). The Nb2O5 powder generated in the exhaust pipe plasma reactor (310) is excited fluorine atoms (F) injected into the chamber exhaust pipe (307). * It reacts with ) to gasify and form NbF5. Accordingly, it is possible to prevent the Nb2O5 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0181] Next, the operation of the plasma equipment (409a) is described as follows when a Ta2O5 process is performed using a process gas containing Ta(OC2H5)5 in the process chamber (302). After the Ta2O5 process is performed in the process chamber (302), exhaust gas containing unreacted Ta(OC2H5)5 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. By the operation of the exhaust pipe plasma reactor (310), the Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce Ta2O5, which is a stabilized powder. The Ta2O5 powder generated in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310) and flows along the chamber exhaust pipe (307). Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (310) and the cooler (448). The Ta2O5 powder generated in the exhaust pipe plasma reactor (310) is excited fluorine atoms (F) injected into the chamber exhaust pipe (307). * It reacts with ) to gasify and form TaF5. Accordingly, Ta2O5 powder can be prevented from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0182] Next, the operation of the plasma equipment (409a) when the ACL process is performed in the process chamber (302) is described as follows. After the ACL process is performed in the process chamber (302), exhaust gas containing hydrogenated amorphous carbon (aC:H) is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. The hydrogenated amorphous carbon (aC:H) contained in the exhaust gas discharged from the semiconductor process chamber (302) by the operation of the exhaust pipe plasma reactor (310) is carbon atoms (C) excited by the plasma reaction in the exhaust pipe plasma reactor (310). * ) and excited hydrogen atoms (H * It is decomposed into ). Excited carbon atoms (C) generated in the exhaust pipe plasma reactor (310). * ) and excited hydrogen atoms (H * ) is discharged from the exhaust pipe plasma reactor (310) and flows along the chamber exhaust pipe (307). Oxygen (O2) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the O2 gas through a plasma reaction to produce excited oxygen atoms (O2) which are reaction active species. * Generates ) excited oxygen atoms (O) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (310) and the cooler (448). Excited carbon atoms (C) generated in the exhaust pipe plasma reactor (310) * ) and excited hydrogen atoms (H * ) and excited oxygen atoms (O) injected into the chamber exhaust pipe (307) *A substitution (oxidation) reaction occurs between them to produce carbon dioxide gas (CO2), carbon monoxide gas (CO), and water vapor (H2O). Accordingly, hydrogenated amorphous carbon (aC:H) can be prevented from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0183] FIG. 13 illustrates, as a block diagram, the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 4B embodiment of the present invention. Referring to FIG. 13, the semiconductor manufacturing facility (400B) includes a semiconductor manufacturing facility (301) in which a semiconductor manufacturing process for manufacturing semiconductor devices is performed, a gas purification facility (303) for purifying gas discharged from the semiconductor manufacturing facility (301), an exhaust facility (305) for discharging gas from the semiconductor manufacturing facility (301) and flowing it to the gas purification facility (303), and a plasma equipment (409b) according to the 4B embodiment of the present invention for processing gas discharged from the semiconductor manufacturing facility (301) to prevent a decrease in gas fluidity. The remaining components of the semiconductor manufacturing facility (400B), excluding the plasma equipment (409b), are generally the same as the semiconductor manufacturing facility (400A) shown in FIG. 12.

[0184] The plasma equipment (409b) comprises an exhaust pipe plasma reactor (310) that generates a plasma reaction for exhaust gas discharged from a semiconductor process chamber (302), a cooler (448) installed on the chamber exhaust pipe (307), a remote plasma reactor (350) that generates a reaction active species supplied to the chamber exhaust pipe (307) using plasma, a remote plasma source gas supply unit (390) that supplies gas to the remote plasma reactor (350), a power supply unit (170) that produces power required for the operation of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350), a switch unit (180b) that electrically connects the power supply unit (170) to either the exhaust pipe plasma reactor (310) or the remote plasma reactor (350), and a control unit (190b) that controls the operation of the switch unit (180b).

[0185] The exhaust pipe plasma reactor (310) is largely identical to the configuration of the exhaust pipe plasma reactor (310) described in the embodiment shown in FIG. 12, so a detailed description thereof is omitted here.

[0186] Since the cooler (448) is largely the same as the cooler (448) described in the embodiment shown in FIG. 12, a detailed description thereof is omitted here.

[0187] The remote plasma reactor (350) is largely identical to the configuration of the remote plasma reactor (350) described in the embodiment shown in FIG. 12, so a detailed description thereof is omitted here.

[0188] The remote plasma source gas supply unit (390) is largely identical to the configuration of the remote plasma source gas supply unit (390) described in the embodiment shown in FIG. 12, so a detailed description thereof is omitted here.

[0189] Since the power supply unit (170) is largely the same as the configuration of the power supply unit (170) described in the embodiment shown in FIG. 11, a detailed description thereof is omitted here.

[0190] Since the switch device (180b) is largely identical to the configuration of the switch device (195) described in the embodiment shown in FIG. 11, a detailed description thereof is omitted here.

[0191] The control unit (190b) is largely identical to the configuration of the control unit (190b) described in the embodiment shown in FIG. 11, so a detailed description thereof is omitted here.

[0192] Hereinafter, the operation of the plasma equipment (409b) according to various processes performed in the process chamber (302) will be explained in detail.

[0193] First, the operation of the plasma equipment (409b) is described as follows when a SiO2 process is performed using a process gas containing a Si-containing precursor in the process chamber (302). In this embodiment, TEOS is used as the Si-containing precursor. After the SiO2 process is performed in the process chamber (102), exhaust gas containing unreacted TEOS is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0194] When only the exhaust pipe plasma reactor (310) is operating, the TEOS contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce SiO2, which is a stabilized powder. The SiO2 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310) and flows along the chamber exhaust pipe (307). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * ) can be generated. The SiO2 powder discharged from the exhaust pipe plasma reactor (310) is excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310). * It reacts with ) to gasify and form SiF4. Accordingly, it is possible to prevent the SiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0195] When only the remote plasma reactor (350) is operated, TEOS contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce SiO2 powder. Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (310) and the cooler (448). SiO2 powder is excited fluorine atoms (F) injected into the chamber exhaust pipe (307). * It reacts with ) to gasify and form SiF4. Accordingly, it is possible to prevent the SiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0196] Next, the operation of the plasma equipment (409b) is described as follows when a TiO2 process is performed in a process chamber (302) using a process gas containing a Ti-containing precursor. In this embodiment, it is described that Ti(OCH2CH3)4 is used as the Ti-containing precursor. After the TiO2 process is performed in the process chamber (302), exhaust gas containing unreacted Ti(OCH2CH3)4 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0197] When only the exhaust pipe plasma reactor (310) is operating, Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce TiO2, which is a stabilized powder. The TiO2 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310) and flows along the chamber exhaust pipe (307). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * ) can be generated. The TiO2 powder discharged from the exhaust pipe plasma reactor (310) is excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310). * It reacts with ) to gasify and form TiF4. Accordingly, it is possible to prevent the TiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0198] When only the remote plasma reactor (350) is operated, Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce TiO2 powder. Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (310) and the cooler (448). TiO2 powder is excited fluorine atoms (F) injected into the chamber exhaust pipe (307). * It reacts with ) to gasify and form TiF4. Accordingly, it is possible to prevent the TiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0199] Next, the operation of the plasma equipment (409b) is described as follows when a ZrO2 process is performed in a process chamber (302) using a process gas containing a Zr-containing precursor. In this embodiment, (C5H5)Zr(N(CH3)2)3 is used as the Zr-containing precursor. After the ZrO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Zr(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0200] When only the exhaust pipe plasma reactor (310) is operating, (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce ZrO2, which is a stabilized powder. The ZrO2 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310) and flows along the chamber exhaust pipe (307). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * ) can be generated. The ZrO2 powder discharged from the exhaust pipe plasma reactor (310) is excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310). * It reacts with ) to gasify and form ZrF4. Accordingly, it is possible to prevent the ZrO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0201] When only the remote plasma reactor (350) is operated, (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce ZrO2 powder. Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (310) and the cooler (448). ZrO2 powder is excited fluorine atoms (F) injected into the chamber exhaust pipe (307). *It reacts with ) to gasify and form ZrF4. Accordingly, it is possible to prevent the ZrO2 powder from accumulating in the exhaust equipment (105) including the vacuum pump (306) and reducing fluidity.

[0202] Next, the operation of the plasma equipment (409b) is described as follows when an HfO2 process is performed in a process chamber (302) using a process gas containing an Hf-containing precursor. In this embodiment, (C5H5)Hf(N(CH3)2)3 is used as the Hf-containing precursor. After the HfO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Hf(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (106). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0203] When only the exhaust pipe plasma reactor (310) is operating, (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce HfO2, which is a stabilized powder. The HfO2 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310) and flows along the chamber exhaust pipe (307). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * ) can be generated. The HfO2 powder discharged from the exhaust pipe plasma reactor (310) is excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310). *It reacts with ) to gasify and form HfF4. Accordingly, it is possible to prevent HfO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0204] When only the remote plasma reactor (350) is operated, (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce HfO2 powder. Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (310) and the cooler (448). HfO2 powder is excited fluorine atoms (F) injected into the chamber exhaust pipe (307). * It reacts with ) to gasify and form HfF4. Accordingly, it is possible to prevent HfO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0205] Next, the operation of the plasma equipment (409b) is described as follows when an Nb2O5 process is performed in a process chamber (302) using a process gas containing an Nb-containing precursor. In this embodiment, (C5H5)Nb(N(CH3)2)3 is used as the Nb-containing precursor. After the Nb2O5 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Nb(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0206] When only the exhaust pipe plasma reactor (310) is operating, (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce Nb2O5, which is a stabilized powder. The Nb2O5 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310) and flows along the chamber exhaust pipe (307). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * ) can be generated. The Nb2O5 powder discharged from the exhaust pipe plasma reactor (310) is excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310). * It reacts with ) to gasify and form NbF5. Accordingly, it is possible to prevent the Nb2O5 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0207] When only the remote plasma reactor (350) is operated, (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce Nb2O5 powder. Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (310) and the cooler (448). Nb2O5 powder is excited fluorine atoms (F) injected into the chamber exhaust pipe (307). * It reacts with ) to gasify and form NbF5. Accordingly, it is possible to prevent the Nb2O5 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0208] Next, the operation of the plasma equipment (409b) is described as follows when a Ta2O5 process is performed in a process chamber (302) using a process gas containing a Ta-containing precursor. In this embodiment, Ta(OC2H5)5 is used as the Ta-containing precursor. After the Ta2O5 process is performed in the process chamber (302), exhaust gas containing unreacted Ta(OC2H5)5 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0209] When only the exhaust pipe plasma reactor (310) is operating, Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce Ta2O5, which is a stabilized powder. The Ta2O5 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310) and flows along the chamber exhaust pipe (307). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * ) can be generated. The Ta2O5 powder discharged from the exhaust pipe plasma reactor (310) is excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310). * It reacts with ) to gasify and form TaF5. Accordingly, Ta2O5 powder can be prevented from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0210] When only the remote plasma reactor (350) is operated, Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce Ta2O5 powder. Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (107) to the section between the exhaust pipe plasma reactor (310) and the cooler (448). Ta2O5 powder is excited fluorine atoms (F) injected into the chamber exhaust pipe (307). *It reacts with ) to gasify and form TaF5. Accordingly, Ta2O5 powder can be prevented from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0211] FIG. 14 illustrates, as a block diagram, the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 5A embodiment of the present invention. Referring to FIG. 14, the semiconductor manufacturing facility (500A) includes semiconductor manufacturing equipment (301) in which a semiconductor manufacturing process for manufacturing semiconductor devices is performed, gas purification equipment (303) for purifying gas discharged from the semiconductor manufacturing equipment (301), exhaust equipment (305) for discharging gas from the semiconductor manufacturing equipment (301) and flowing it to the gas purification equipment (303), and plasma equipment (509a) according to the 5A embodiment of the present invention for processing gas discharged from the semiconductor manufacturing equipment (301) to prevent a decrease in gas fluidity. The remaining components of the semiconductor manufacturing facility (500A), excluding the plasma equipment (509a), are generally the same as the semiconductor manufacturing facility (300A) shown in FIG. 6.

[0212] The plasma equipment (509a) comprises an exhaust pipe plasma reactor (310) that generates a plasma reaction for exhaust gas discharged from a semiconductor process chamber (302), a remote plasma reactor (350) that generates a reaction active species supplied to the chamber exhaust pipe (307) using plasma, a remote plasma source gas supply unit (390) that supplies gas to the remote plasma reactor (350), a power supply unit (170) that produces power required for the exhaust pipe plasma reactor (310) and the remote plasma reactor (350), a power distributor (180a) that distributes power produced by the power supply unit (170) and supplies it to the exhaust pipe plasma reactor (310) and the remote plasma reactor (350), and a controller (190a) that controls the operation of the power distributor (180a). The plasma equipment (509a) is configured such that the cooler (448) is excluded from the plasma equipment (409a) shown in FIG. 12, and since cooling is not required compared to the plasma equipment (409a) shown in FIG. 12, the energy consumption efficiency in the operation of the plasma equipment (509a) is improved. The operation of the plasma equipment (509a) is generally the same as the operation of the plasma equipment (409a) described in the embodiment of FIG. 12.

[0213] FIG. 15 illustrates, as a block diagram, the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 5B embodiment of the present invention. Referring to FIG. 15, the semiconductor manufacturing facility (500B) comprises: a semiconductor manufacturing facility (301) in which a semiconductor manufacturing process for manufacturing a semiconductor device is performed; a gas purification facility (303) for purifying gas discharged from the semiconductor manufacturing facility (301); an exhaust facility (305) for discharging gas from the semiconductor manufacturing facility (301) and flowing it to the gas purification facility (303); and a plasma equipment (509b) according to the 5B embodiment of the present invention for processing gas discharged from the semiconductor manufacturing facility (301) to prevent a decrease in gas fluidity. The remaining components of the semiconductor manufacturing facility (500B), excluding the plasma equipment (509b), are generally the same as the semiconductor manufacturing facility (500A) shown in FIG. 14.

[0214] The plasma equipment (509b) comprises an exhaust pipe plasma reactor (310) that generates a plasma reaction for exhaust gas discharged from a semiconductor process chamber (302), a remote plasma reactor (350) that generates a reaction active species supplied to the chamber exhaust pipe (307) using plasma, a remote plasma source gas supply unit (390) that supplies gas to the remote plasma reactor (350), a power supply unit (170) that produces power required for the operation of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350), a switch unit (180b) that electrically connects the power supply unit (170) to either the exhaust pipe plasma reactor (310) or the remote plasma reactor (350), and a control unit (190b) that controls the operation of the switch unit (180b). The plasma equipment (509b) is configured such that the cooler (448) is excluded from the plasma equipment (409b) shown in FIG. 13, and since cooling is not required compared to the plasma equipment (409b) shown in FIG. 13, the energy consumption efficiency in the operation of the plasma equipment (509b) is improved. The operation of the plasma equipment (509b) is generally the same as the operation of the plasma equipment (409b) described in the embodiment of FIG. 13.

[0215] FIG. 16 illustrates, as a block diagram, the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 6A embodiment of the present invention. Referring to FIG. 16, the semiconductor manufacturing facility (600A) includes semiconductor manufacturing equipment (301) in which a semiconductor manufacturing process for manufacturing semiconductor devices is performed, gas purification equipment (303) for purifying gas discharged from the semiconductor manufacturing equipment (301), exhaust equipment (305) for discharging gas from the semiconductor manufacturing equipment (301) and flowing it to the gas purification equipment (303), and plasma equipment (609a) according to the 6A embodiment of the present invention for processing gas discharged from the semiconductor manufacturing equipment (301) to prevent a decrease in gas fluidity. The remaining components of the semiconductor manufacturing facility (600A), excluding the plasma equipment (609a), are generally the same as the semiconductor manufacturing facility (300A) shown in FIG. 6.

[0216] The plasma equipment (609a) comprises an exhaust pipe plasma reactor (310) that generates a plasma reaction for exhaust gas discharged from a semiconductor process chamber (302), a powder collection trap (348) installed on the chamber exhaust pipe (307) to collect powder, a remote plasma reactor (350) that generates reaction active species supplied to the chamber exhaust pipe (307) using plasma, a remote plasma source gas supply unit (390) that supplies gas to the remote plasma reactor (350), a power supply unit (170) that produces power required for the exhaust pipe plasma reactor (310) and the remote plasma reactor (350), a power distributor (180a) that distributes power produced by the power supply unit (170) and supplies it to the exhaust pipe plasma reactor (310) and the remote plasma reactor (350), and a controller (190a) that controls the operation of the power distributor (180a).

[0217] The exhaust pipe plasma reactor (310) is largely identical to the configuration of the exhaust pipe plasma reactor (310) described in the embodiment shown in FIG. 6, so a detailed description thereof is omitted here.

[0218] The powder collection trap (348) is largely the same as the configuration of the powder collection trap (348) described in the embodiment shown in FIG. 6, so a detailed description thereof is omitted here.

[0219] The remote plasma reactor (350) is largely identical to the configuration of the remote plasma reactor (350) described in the embodiment illustrated in FIG. 6, so a detailed description thereof is omitted here. The gas discharge section (363 in FIG. 9) of the remote plasma reactor (350) is connected to the chamber exhaust pipe (307) through the discharge pipe (687). The discharge pipe (687) is directly connected to the section between the powder collection trap (348) and the vacuum pump (306) in the chamber exhaust pipe (307). Accordingly, the reaction active species generated in the remote plasma reactor (350) is discharged through the discharge port (364), then flows along the discharge pipe (687) and is directly introduced into the chamber exhaust pipe (307) in the section between the powder collection trap (348) and the vacuum pump (306).

[0220] The remote plasma source gas supply unit (390) is largely identical to the configuration of the remote plasma source gas supply unit (390) described in the embodiment shown in FIG. 6, so a detailed description thereof is omitted here.

[0221] The power supply unit (170) produces alternating current power required for the operation of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350). The alternating current power produced by the power supply unit (170) is distributed through a power distributor (180a) and supplied to the exhaust pipe plasma reactor (310) and the remote plasma reactor (350). In this embodiment, the alternating current power produced by the power supply unit (170) is described as radio frequency power, which is a high frequency.

[0222] The power distributor (180a) distributes high-frequency alternating current power produced by the power supply unit (170) and supplies it to the exhaust pipe plasma reactor (310) and the remote plasma reactor (350), respectively, thereby enabling the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) to operate simultaneously. The power distributor (180a) is controlled by the controller (190a) to adjust the ratio of power supplied to the exhaust pipe plasma reactor (310) and power supplied to the remote plasma reactor (350).

[0223] The controller (190a) controls the operation of the power distributor (180a). By controlling the operation of the power distributor (180a) by the controller (190a), the ratio of the power supplied to the exhaust pipe plasma reactor (310) and the power supplied to the remote plasma reactor (350) from the AC power produced by the power supply unit (170) can be adjusted.

[0224] Although not shown in the drawing, a reactor impedance matching part that matches the impedance between the power supply unit (170) and the exhaust pipe plasma reactor (310) and an electrode impedance matching part that matches the impedance between the power supply unit (170) and the remote plasma reactor (350) may be further provided.

[0225] Hereinafter, the operation of the plasma equipment (609a) according to various processes performed in the process chamber (302) will be explained in detail.

[0226] First, the operation of the plasma equipment (609a) is described as follows when a SiO2 process is performed using a process gas containing TEOS (Si(OC2H5)4) in the process chamber (302). After the SiO2 process is performed in the process chamber (302), exhaust gas containing unreacted TEOS is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. By operating the exhaust pipe plasma reactor (310), the TEOS contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce SiO2, which is a stabilized powder. The SiO2 powder generated in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). The uncollected SiO2 powder that is not collected in the powder collection trap (348) passes through the powder collection trap (348) and flows along the chamber exhaust pipe (307). Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the powder collection trap (348) and the vacuum pump (306). Uncollected SiO2 powder that has passed through the powder collection trap (348) is injected into the chamber exhaust pipe (307) by excited fluorine atoms (F * It reacts with ) to gasify and form SiF4. Accordingly, it is possible to prevent the accumulation of uncollected SiO2 powder in the exhaust equipment (305) including the vacuum pump (306) from reducing fluidity.

[0227] Next, the operation of the plasma equipment (609a) is described as follows when a TiO2 process is performed using a process gas containing Ti(OCH2CH3)4 in the process chamber (302). After the TiO2 process is performed in the process chamber (302), exhaust gas containing unreacted Ti(OCH2CH3)4 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. By the operation of the exhaust pipe plasma reactor (310), the Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce TiO2, which is a stabilized powder. The TiO2 powder generated in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). The uncollected TiO2 powder that is not collected in the powder collection trap (348) passes through the powder collection trap (348) and flows along the chamber exhaust pipe (307). Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * It generates ) excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310). * ) is supplied from the chamber exhaust pipe (307) to the section between the powder collection trap (348) and the vacuum pump (306). Uncollected TiO2 powder that has passed through the powder collection trap (348) is injected into the chamber exhaust pipe (307) by excited fluorine atoms (F * It reacts with ) to gasify and form TiF4. Accordingly, it is possible to prevent uncollected TiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0228] Next, the operation of the plasma equipment (609a) is described as follows when a ZrO2 process is performed in a process chamber (302) using a process gas containing (C5H5)Zr(N(CH3)2)3. After the ZrO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Zr(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. By the operation of the exhaust pipe plasma reactor (310), the (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce ZrO2, which is a stabilized powder. ZrO2 powder generated in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310) and flows along the chamber exhaust pipe (307) to be collected in the powder collection trap (348). Uncollected ZrO2 powder that is not collected in the powder collection trap (348) passes through the powder collection trap (348) and flows along the chamber exhaust pipe (307). Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the powder collection trap (348) and the vacuum pump (306). Uncollected ZrO2 powder that has passed through the powder collection trap (348) is injected into the chamber exhaust pipe (307) by excited fluorine atoms (F *It reacts with ) to gasify and form ZrF4. Accordingly, it is possible to prevent uncollected ZrO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0229] Next, the operation of the plasma equipment (609a) is described as follows when an HfO2 process is performed using a process gas containing (C5H5)Hf(N(CH3)2)3 in the process chamber (302). After the HfO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Hf(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. By the operation of the exhaust pipe plasma reactor (310), the (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce HfO2, which is a stabilized powder. HfO2 powder generated in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310) and flows along the chamber exhaust pipe (307) to be collected in the powder collection trap (348). Uncollected HfO2 powder that is not collected in the powder collection trap (348) passes through the powder collection trap (348) and flows along the chamber exhaust pipe (307). Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). *) is supplied from the chamber exhaust pipe (307) to the section between the powder collection trap (348) and the vacuum pump (306). Uncollected HfO2 powder that has passed through the powder collection trap (348) is injected into the chamber exhaust pipe (307) by excited fluorine atoms (F * It reacts with ) to gasify and form HfF4. Accordingly, it is possible to prevent HfO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0230] Next, the operation of the plasma equipment (609a) is described as follows when an Nb2O5 process is performed using a process gas containing (C5H5)Nb(N(CH3)2)3 in the process chamber (302). After the Nb2O5 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Nb(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. By the operation of the exhaust pipe plasma reactor (310), the (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce Nb2O5, which is a stabilized powder. Nb2O5 powder generated in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310) and flows along the chamber exhaust pipe (307) to be collected in the powder collection trap (348). Uncollected Nb2O5 powder that is not collected in the powder collection trap (348) passes through the powder collection trap (348) and flows along the chamber exhaust pipe (307). Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. *Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the powder collection trap (348) and the vacuum pump (306). Uncollected Nb2O5 powder that has passed through the powder collection trap (348) is injected into the chamber exhaust pipe (307) by excited fluorine atoms (F * It reacts with ) to gasify and form NbF5. Accordingly, it is possible to prevent the Nb2O5 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0231] Next, the operation of the plasma equipment (609a) is described as follows when a Ta2O5 process is performed using a process gas containing Ta(OC2H5)5 in the process chamber (302). After the Ta2O5 process is performed in the process chamber (302), exhaust gas containing unreacted Ta(OC2H5)5 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. By the operation of the exhaust pipe plasma reactor (310), the Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce Ta2O5, which is a stabilized powder. Ta2O5 powder generated in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310) and flows along the chamber exhaust pipe (307) to be collected in the powder collection trap (348). Uncollected Ta2O5 powder that is not collected in the powder collection trap (348) passes through the powder collection trap (348) and flows along the chamber exhaust pipe (307). Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species.* Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the powder collection trap (348) and the vacuum pump (306). Uncollected Ta2O5 powder that has passed through the powder collection trap (348) is injected into the chamber exhaust pipe (307) by excited fluorine atoms (F * It reacts with ) to gasify and form TaF5. Accordingly, Ta2O5 powder can be prevented from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0232] Next, the operation of the plasma equipment (609a) when the ACL process is performed in the process chamber (302) is described as follows. After the ACL process is performed in the process chamber (302), exhaust gas containing hydrogenated amorphous carbon (aC:H) is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) are operated. The hydrogenated amorphous carbon (aC:H) contained in the exhaust gas discharged from the semiconductor process chamber (302) by the operation of the exhaust pipe plasma reactor (310) is carbon atoms (C) excited by the plasma reaction in the exhaust pipe plasma reactor (310). * ) and excited hydrogen atoms (H * It is decomposed into ). Excited carbon atoms (C) generated in the exhaust pipe plasma reactor (310). * ) and excited hydrogen atoms (H *) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and passes through the powder collection trap (348). Oxygen (O2) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the O2 gas through a plasma reaction to produce excited oxygen atoms (O2) which are reaction active species. * Generates ) excited oxygen atoms (O) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the powder collection trap (348) and the vacuum pump (306). Excited carbon atoms (C) that pass through the powder collection trap (348) * ), excited hydrogen atom (H * ) and excited oxygen atoms (O) injected into the chamber exhaust pipe (307) * A substitution (oxidation) reaction occurs between them to produce carbon dioxide gas (CO2), carbon monoxide gas (CO), and water vapor (H2O). Accordingly, hydrogenated amorphous carbon (aC:H) can be prevented from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0233] FIG. 17 illustrates, as a block diagram, the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 6B embodiment of the present invention. Referring to FIG. 17, the semiconductor manufacturing facility (600B) includes semiconductor manufacturing equipment (301) in which a semiconductor manufacturing process for manufacturing semiconductor devices is performed, gas purification equipment (303) for purifying gas discharged from the semiconductor manufacturing equipment (301), exhaust equipment (305) for discharging gas from the semiconductor manufacturing equipment (301) and flowing it to the gas purification equipment (303), and plasma equipment (609b) according to the 6B embodiment of the present invention for processing gas discharged from the semiconductor manufacturing equipment (301) to prevent a decrease in gas fluidity. The remaining components of the semiconductor manufacturing facility (600B), excluding the plasma equipment (609b), are generally the same as the semiconductor manufacturing facility (600A) shown in FIG. 16.

[0234] The plasma equipment (609b) comprises an exhaust pipe plasma reactor (310) that generates a plasma reaction for exhaust gas discharged from a semiconductor process chamber (302), a powder collection trap (348) installed on the chamber exhaust pipe (307) to collect powder, a remote plasma reactor (350) that generates a reaction active species supplied to the chamber exhaust pipe (307) using plasma, a remote plasma source gas supply unit (390) that supplies gas to the remote plasma reactor (350), a power supply unit (170) that produces power required for the operation of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350), a switch unit (180b) that electrically connects the power supply unit (170) to either the exhaust pipe plasma reactor (310) or the remote plasma reactor (350), and a control unit (190b) that controls the operation of the switch unit (180b).

[0235] The exhaust pipe plasma reactor (310) is largely identical to the configuration of the exhaust pipe plasma reactor (310) described in the embodiment shown in FIG. 16, so a detailed description thereof is omitted here.

[0236] The powder collection trap (348) is largely identical to the configuration of the powder collection trap (348) described in the embodiment shown in FIG. 16, so a detailed description thereof is omitted here.

[0237] Since the remote plasma reactor (350) is largely identical to the configuration of the remote plasma reactor (350) described in the embodiment illustrated in FIG. 16, a detailed description thereof is omitted here. The gas discharge section (363 in FIG. 9) of the remote plasma reactor (350) is connected to the chamber exhaust pipe (307) through the discharge pipe (687). The discharge pipe (687) is directly connected to the section between the powder collection trap (348) and the vacuum pump (306) in the chamber exhaust pipe (307). Accordingly, the reaction active species generated in the remote plasma reactor (350) is discharged through the discharge port (364 in FIG. 9), then flows along the discharge pipe (687) and is directly introduced into the chamber exhaust pipe (307) in the section between the powder collection trap (348) and the vacuum pump (306).

[0238] The remote plasma source gas supply unit (390) is largely identical to the configuration of the remote plasma source gas supply unit (390) described in the embodiment shown in FIG. 16, so a detailed description thereof is omitted here.

[0239] Since the power supply unit (170) is largely the same as the configuration of the power supply unit (170) described in the embodiment shown in FIG. 16, a detailed description thereof is omitted here.

[0240] Since the switch device (180b) is largely the same as the configuration of the switch device (180b) described in the embodiment shown in FIG. 16, a detailed description thereof is omitted here.

[0241] The control unit (190b) is largely identical to the configuration of the control unit (190b) described in the embodiment shown in FIG. 16, so a detailed description thereof is omitted here.

[0242] Hereinafter, the operation of the plasma equipment (609b) according to various processes performed in the process chamber (302) will be explained in detail.

[0243] First, the operation of the plasma equipment (609b) when a SiO2 process is performed using a process gas containing a Si-containing precursor in the process chamber (302) is described as follows. In this embodiment, TEOS is used as the Si-containing precursor. After the SiO2 process is performed in the process chamber (302), exhaust gas containing unreacted TEOS is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0244] When only the exhaust pipe plasma reactor (310) is operating, the TEOS contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce SiO2, which is a stabilized powder. The SiO2 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (102) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * ) can be generated. Fluorine atoms (F) generated in the exhaust pipe plasma reactor (310). *) is supplied to the powder collection trap (348). In the powder collection trap (348), the SiO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form SiF4. Accordingly, it is possible to prevent the SiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0245] When only the remote plasma reactor (350) is operating, TEOS contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce SiO2 powder, and the produced SiO2 powder is collected in the powder collection trap (348). Uncollected SiO2 powder that is not collected in the powder collection trap (348) passes through the powder collection trap (348) and flows along the chamber exhaust pipe (307). Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the powder collection trap (348) and the vacuum pump (306). Uncollected SiO2 powder that has passed through the powder collection trap (348) is injected into the chamber exhaust pipe (307) by excited fluorine atoms (F * It reacts with ) to gasify and form SiF4. Accordingly, it is possible to prevent the accumulation of uncollected SiO2 powder in the exhaust equipment (305) including the vacuum pump (306) from reducing fluidity.

[0246] Next, the operation of the plasma equipment (609b) is described as follows when a TiO2 process is performed in a process chamber (302) using a process gas containing a Ti-containing precursor. In this embodiment, it is described that Ti(OCH2CH3)4 is used as the Ti-containing precursor. After the TiO2 process is performed in the process chamber (302), exhaust gas containing unreacted Ti(OCH2CH3)4 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0247] When only the exhaust pipe plasma reactor (310) is operating, Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce TiO2, which is a stabilized powder. The TiO2 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * ) can be generated. Excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the TiO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form TiF4. Accordingly, it is possible to prevent the TiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0248] When only the remote plasma reactor (350) is operating, Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce TiO2 powder, and the produced TiO2 powder is collected in the powder collection trap (348). Uncollected TiO2 powder that is not collected in the powder collection trap (348) passes through the powder collection trap (348) and flows along the chamber exhaust pipe (307). Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (150) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * It generates ) excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310). * ) is supplied from the chamber exhaust pipe (307) to the section between the powder collection trap (348) and the vacuum pump (306). Uncollected TiO2 powder that has passed through the powder collection trap (348) is injected into the chamber exhaust pipe (307) by excited fluorine atoms (F * It reacts with ) to gasify and form TiF4. Accordingly, it is possible to prevent uncollected TiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0249] Next, the operation of the plasma equipment (609b) is described as follows when a ZrO2 process is performed in a process chamber (302) using a process gas containing a Zr-containing precursor. In this embodiment, (C5H5)Zr(N(CH3)2)3 is used as the Zr-containing precursor. After the ZrO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Zr(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0250] When only the exhaust pipe plasma reactor (310) is operating, (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce ZrO2, which is a stabilized powder. The ZrO2 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * ) can be generated. Excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the ZrO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form ZrF4. Accordingly, it is possible to prevent the ZrO2 powder from accumulating in the exhaust equipment (105) including the vacuum pump (106) and reducing fluidity.

[0251] When only the remote plasma reactor (350) is operating, (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce ZrO2 powder, and the produced ZrO2 powder is collected in the powder collection trap (348). The uncollected ZrO2 powder that is not collected in the powder collection trap (348) passes through the powder collection trap (348) and flows along the chamber exhaust pipe (307). Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the powder collection trap (348) and the vacuum pump (306). Uncollected ZrO2 powder that has passed through the powder collection trap (348) is injected into the chamber exhaust pipe (307) by excited fluorine atoms (F * It reacts with ) to gasify and form ZrF4. Accordingly, it is possible to prevent uncollected ZrO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0252] Next, the operation of the plasma equipment (609b) is described as follows when an HfO2 process is performed using a process gas containing an Hf-containing precursor in the process chamber (302). In this embodiment, (C5H5)Hf(N(CH3)2)3 is used as the Hf-containing precursor. After the HfO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Hf(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0253] When only the exhaust pipe plasma reactor (310) is operating, (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce HfO2, which is a stabilized powder. The HfO2 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (102) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * ) can be generated. Excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the HfO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form HfF4. Accordingly, it is possible to prevent HfO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0254] When only the remote plasma reactor (350) is operating, (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to form HfO2 powder, and the generated HfO2 powder is collected in the powder collection trap (348). Uncollected HfO2 powder that is not collected in the powder collection trap (348) passes through the powder collection trap (348) and flows along the chamber exhaust pipe (307). Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (150) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the powder collection trap (348) and the vacuum pump (306). Uncollected HfO2 powder that has passed through the powder collection trap (348) is injected into the chamber exhaust pipe (307) by excited fluorine atoms (F * It reacts with ) to gasify and form HfF4. Accordingly, it is possible to prevent HfO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0255] Next, the operation of the plasma equipment (609b) is described as follows when an Nb2O5 process is performed in a process chamber (302) using a process gas containing an Nb-containing precursor. In this embodiment, (C5H5)Nb(N(CH3)2)3 is used as the Nb-containing precursor. After the Nb2O5 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Nb(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0256] When only the exhaust pipe plasma reactor (310) is operating, (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce Nb2O5, which is a stabilized powder. The Nb2O5 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * ) can be generated. Excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the Nb2O5 powder is excited fluorine atoms (F * It reacts with ) to gasify and form NbF5. Accordingly, it is possible to prevent the Nb2O5 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0257] When only the remote plasma reactor (350) is operated, (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce Nb2O5 powder, and the produced Nb2O5 powder is collected in the powder collection trap (348). The uncollected Nb2O5 powder that is not collected in the powder collection trap (348) passes through the powder collection trap (348) and flows along the chamber exhaust pipe (307). Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the powder collection trap (348) and the vacuum pump (306). Uncollected Nb2O5 powder that has passed through the powder collection trap (348) is injected into the chamber exhaust pipe (307) by excited fluorine atoms (F * It reacts with ) to gasify and form NbF5. Accordingly, it is possible to prevent the Nb2O5 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0258] Next, the operation of the plasma equipment (609b) is described as follows when a Ta2O5 process is performed in a process chamber (302) using a process gas containing a Ta-containing precursor. In this embodiment, Ta(OC2H5)5 is used as the Ta-containing precursor. After the Ta2O5 process is performed in the process chamber (302), exhaust gas containing unreacted Ta(OC2H5)5 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (310) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0259] When only the exhaust pipe plasma reactor (310) is operating, Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (310) to produce Ta2O5, which is a stabilized powder. The Ta2O5 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (310) decomposes the fluorine (F) component contained in the exhaust gas of the process chamber (302) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * ) can be generated. Excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (310). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the Ta2O5 powder is excited fluorine atoms (F * It reacts with ) to gasify and form TaF5. Accordingly, Ta2O5 powder can be prevented from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0260] When only the remote plasma reactor (350) is operating, Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce Ta2O5 powder, and the produced Ta2O5 powder is collected in the powder collection trap (348). Uncollected Ta2O5 powder that is not collected in the powder collection trap (348) passes through the powder collection trap (348) and flows along the chamber exhaust pipe (307). Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the powder collection trap (348) and the vacuum pump (306). Uncollected Ta2O5 powder that has passed through the powder collection trap (348) is injected into the chamber exhaust pipe (307) by excited fluorine atoms (F * It reacts with ) to gasify and form TaF5. Accordingly, Ta2O5 powder can be prevented from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0261] FIG. 18 illustrates, as a block diagram, the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 7A embodiment of the present invention. Referring to FIG. 18, the semiconductor manufacturing facility (700A) includes semiconductor manufacturing equipment (301) in which a semiconductor manufacturing process for manufacturing semiconductor devices is performed, gas purification equipment (303) for purifying gas discharged from the semiconductor manufacturing equipment (301), exhaust equipment (305) for discharging gas from the semiconductor manufacturing equipment (301) and flowing it to the gas purification equipment (303), and plasma equipment (709a) according to the 7A embodiment of the present invention for processing gas discharged from the semiconductor manufacturing equipment (301) to prevent a decrease in gas fluidity. Since the remaining components of the semiconductor manufacturing facility (700A), excluding the plasma equipment (709a), are generally the same as the semiconductor manufacturing facility (300A) shown in FIG. 6, only the plasma equipment (709a) is described here.

[0262] The plasma equipment (709a) comprises an exhaust pipe plasma reactor (710) that generates a plasma reaction for exhaust gas discharged from a semiconductor process chamber (302), an exhaust pipe plasma source gas supply unit (747) that supplies source gas to the exhaust pipe plasma reactor (710), a powder collection trap (348) installed on the chamber exhaust pipe (307) to collect powder, a remote plasma reactor (350) that generates reaction active species supplied to the powder collection trap (348) using plasma, a remote plasma source gas supply unit (390) that supplies source gas to the remote plasma reactor (350), a power supply unit (170) that produces power required for the exhaust pipe plasma reactor (710) and the remote plasma reactor (350), a power distributor (180a) that distributes power produced by the power supply unit (170) and supplies it to the exhaust pipe plasma reactor (310) and the remote plasma reactor (350), and power A controller (190a) for controlling the operation of the distributor (180a) is provided.

[0263] The exhaust pipe plasma reactor (710) receives source gas for exhaust pipe plasma from the exhaust pipe plasma source gas supply unit (747). Since the configuration of the exhaust pipe plasma reactor (710) receiving source gas for exhaust pipe plasma from the exhaust pipe plasma source gas supply unit (747) is generally the same as the configuration of the exhaust pipe plasma reactor (310) described in the embodiment shown in FIG. 6, a detailed description thereof is omitted here.

[0264] The exhaust pipe plasma source gas supply unit (747) stores the source gas for the exhaust pipe plasma supplied to the exhaust pipe plasma reactor (710) and supplies the stored source gas for the exhaust pipe plasma to the exhaust pipe plasma reactor (710). In this embodiment, the exhaust pipe plasma source gas supply unit (747) is described as supplying nitrogen trifluoride (NF3) or oxygen (O2) as the source gas for the exhaust pipe plasma to the exhaust pipe plasma reactor (710).

[0265] The powder collection trap (348) is largely the same as the configuration of the powder collection trap (348) described in the embodiment shown in FIG. 6, so a detailed description thereof is omitted here.

[0266] The remote plasma reactor (350) is largely identical to the configuration of the remote plasma reactor (350) described in the embodiment shown in FIG. 6, so a detailed description thereof is omitted here.

[0267] The remote plasma source gas supply unit (390) is largely identical to the configuration of the remote plasma source gas supply unit (390) described in the embodiment shown in FIG. 6, so a detailed description thereof is omitted here.

[0268] The power supply unit (170) produces alternating current power required for the operation of the exhaust pipe plasma reactor (710) and the remote plasma reactor (350). The alternating current power produced by the power supply unit (170) is distributed through a power distributor (180a) and supplied to the exhaust pipe plasma reactor (710) and the remote plasma reactor (350). In this embodiment, the alternating current power produced by the power supply unit (170) is described as radio frequency power, which is a high frequency.

[0269] The power distributor (180a) distributes high-frequency alternating current power produced by the power supply unit (170) and supplies it to the exhaust pipe plasma reactor (710) and the remote plasma reactor (350), respectively, thereby enabling the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) to operate simultaneously. The power distributor (180a) is controlled by the controller (190a) to adjust the ratio of power supplied to the exhaust pipe plasma reactor (710) and power supplied to the remote plasma reactor (350).

[0270] The controller (190a) controls the operation of the power distributor (180a). By controlling the operation of the power distributor (180a) by the controller (190a), the ratio of the power supplied to the exhaust pipe plasma reactor (710) and the power supplied to the remote plasma reactor (350) from the AC power produced by the power supply unit (170) can be adjusted.

[0271] Although not shown in the drawing, a reactor impedance matching part that matches the impedance between the power supply unit (170) and the exhaust pipe plasma reactor (710) and an electrode impedance matching part that matches the impedance between the power supply unit (170) and the remote plasma reactor (350) may be further provided.

[0272] Hereinafter, the operation of the plasma equipment (709a) according to various processes performed in the process chamber (302) will be described in detail. The plasma equipment (709a) can operate with the following three examples of gas processing.

[0273] [Gas Treatment Example 1A]

[0274] Gas treatment example 1A is in which both the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) are used to produce stabilized powder by oxidation.

[0275] First, the operation of the plasma equipment (709a) is described as follows when a SiO2 process is performed in a process chamber (302) using a process gas containing TEOS (Si(OC2H5)4). After the SiO2 process is performed in the process chamber (302), exhaust gas containing unreacted TEOS is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) operate. The exhaust pipe plasma reactor (710) receives oxygen from the exhaust pipe plasma source gas supply unit (747) and the excited oxygen (O * ) generates. The TEOS contained in the exhaust gas discharged from the semiconductor process chamber (302) generates oxygen (O) excited in the exhaust pipe plasma reactor (710). * It produces SiO2, a stabilized powder, by reacting with ). The SiO2 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the remote plasma reactor (350) receives oxygen from the remote plasma source gas supply unit (390) and excited oxygen (O * ) is generated and supplied to the powder collection trap (348). In the powder collection trap (348), TEOS contained in the exhaust gas and excited oxygen (O) supplied from the remote plasma reactor (350) *SiO2, which is a stabilized powder, is produced by the reaction and is collected in the powder collection trap (348). As much powder as possible is collected in the powder collection trap (348), the amount of powder flowing into the vacuum pump (306) is minimized.

[0276] Next, the operation of the plasma equipment (709a) is described as follows when a TiO2 process is performed in the process chamber (302) using a process gas containing Ti(OCH2CH3)4. After the TiO2 process is performed in the process chamber (302), exhaust gas containing unreacted Ti(OCH2CH3)4 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) are operated. The exhaust pipe plasma reactor (710) receives oxygen from the exhaust pipe plasma source gas supply unit (747) and the excited oxygen (O * ) generates. The Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (302) generates oxygen (O) excited in the exhaust pipe plasma reactor (710). * It produces TiO2, which is a stabilized powder, by reacting with ). The TiO2 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). In addition, the remote plasma reactor (350) receives oxygen from the remote plasma source gas supply unit (390) and excited oxygen (O * ) is generated and supplied to the powder collection trap (348). In the powder collection trap (348), Ti(OCH2CH3)4 contained in the exhaust gas and excited oxygen (O) supplied from the remote plasma reactor (350) *TiO2, which is a stabilized powder, is produced by the reaction and is collected in the powder collection trap (348). As much powder as possible is collected in the powder collection trap (348), the amount of powder flowing into the vacuum pump (306) is minimized.

[0277] Next, the operation of the plasma equipment (709a) is described as follows when a ZrO2 process is performed in the process chamber (302) using a process gas containing (C5H5)Zr(N(CH3)2)3. After the ZrO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Zr(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) are operated. The exhaust pipe plasma reactor (710) receives oxygen from the exhaust pipe plasma source gas supply unit (747) and the excited oxygen (O * It generates ). The (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) generates oxygen (O) excited in the exhaust pipe plasma reactor (710). * ZrO2, which is a stabilized powder, is produced by reacting with ). The ZrO2 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the remote plasma reactor (350) receives oxygen from the remote plasma source gas supply unit (390) and excited oxygen (O * ) is generated and supplied to the powder collection trap (348). In the powder collection trap (348), (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas and excited oxygen (O) supplied from the remote plasma reactor (350) *ZrO2, which is a stabilized powder, is produced by the reaction and is collected in the powder collection trap (348). As much powder as possible is collected in the powder collection trap (348), the amount of powder flowing into the vacuum pump (306) is minimized.

[0278] Next, the operation of the plasma equipment (709a) is described as follows when an HfO2 process is performed in the process chamber (302) using a process gas containing (C5H5)Hf(N(CH3)2)3. After the HfO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Hf(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) are operated. The exhaust pipe plasma reactor (710) receives oxygen from the exhaust pipe plasma source gas supply unit (747) and the excited oxygen (O * It generates ). The (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) is excited oxygen (O) in the exhaust pipe plasma reactor (710). * HfO2, which is a stabilized powder, is produced by reacting with ). The HfO2 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). In addition, the remote plasma reactor (350) receives oxygen from the remote plasma source gas supply unit (390) and excited oxygen (O * ) is generated and supplied to the powder collection trap (348). In the powder collection trap (348), (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas and excited oxygen (O) supplied from the remote plasma reactor (350) *HfO2, which is a stabilized powder, is produced by the reaction and is collected in the powder collection trap (348). As much powder as possible is collected in the powder collection trap (348), the amount of powder flowing into the vacuum pump (306) is minimized.

[0279] Next, the operation of the plasma equipment (709a) is described as follows when an Nb2O5 process is performed in the process chamber (302) using a process gas containing (C5H5)Nb(N(CH3)2)3. After the Nb2O5 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Nb(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) operate. The exhaust pipe plasma reactor (710) receives oxygen from the exhaust pipe plasma source gas supply unit (747) and receives excited oxygen (O * It generates ). The (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) generates oxygen (O) excited in the exhaust pipe plasma reactor (710). * It reacts with ) to produce Nb2O5, a stabilized powder. The Nb2O5 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the remote plasma reactor (350) receives oxygen from the remote plasma source gas supply (390) and the excited oxygen (O * ) is generated and supplied to the powder collection trap (348). In the powder collection trap (348), (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas and excited oxygen (O) supplied from the remote plasma reactor (350) *Nb2O5, which is a stabilized powder, is produced by the reaction and is collected in the powder collection trap (348). As much powder as possible is collected in the powder collection trap (348), the amount of powder flowing into the vacuum pump (306) is minimized.

[0280] Next, the operation of the plasma equipment (709a) when a Ta2O5 process using a process gas containing Ta(OC2H5)5 is performed in the process chamber (302) is described as follows. After the Ta2O5 process is performed in the process chamber (302), exhaust gas containing unreacted Ta(OC2H5)5 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) are operated. The exhaust pipe plasma reactor (710) receives oxygen from the exhaust pipe plasma source gas supply unit (747) and the excited oxygen (O * ...generates ) Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber (302) is oxygen (O) excited in the exhaust pipe plasma reactor (710). * Ta2O5, a stabilized powder, is produced by reacting with ). The Ta2O5 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the remote plasma reactor (350) receives oxygen from the remote plasma source gas supply unit (390) and excited oxygen (O * ) is generated and supplied to the powder collection trap (348). In the powder collection trap (348), Ta(OC2H5)5 contained in the exhaust gas and excited oxygen (O) supplied from the plasma reactor (350) *Ta2O5, a stabilized powder, is produced by the reaction and is collected in the powder collection trap (348). As much powder as possible is collected in the powder collection trap (348), the amount of powder flowing into the vacuum pump (306) is minimized.

[0281] [Gas Treatment Example 2A]

[0282] Gas treatment example 2A is used for powder gasification of reaction active species generated in the exhaust pipe plasma reactor (710) and the remote plasma reactor (350).

[0283] First, the operation of the plasma equipment (709a) is described as follows when a SiO2 process is performed using a process gas containing a Si-containing precursor in a process chamber (302). In this embodiment, Si(OC2H5)4 (TEOS: Tetraethyl Orthosilicate) is used as the Si-containing precursor. After the SiO2 process is performed in the process chamber (302), exhaust gas containing unreacted TEOS is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) are operated. By the operation of the exhaust pipe plasma reactor (710), the TEOS contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (710) to produce SiO2, which is a stabilized powder. The SiO2 powder generated in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (710) decomposes the NF3 gas supplied by the exhaust pipe plasma source gas supply unit (747) through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. *) is generated. Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a remote plasma source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (710) and the remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the SiO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form SiF4. Accordingly, it is possible to prevent the SiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0284] Next, the operation of the plasma equipment (709a) is described as follows when a TiO2 process is performed in a process chamber (302) using a process gas containing a Ti-containing precursor. In this embodiment, it is described that Ti(OCH2CH3)4 is used as the Ti-containing precursor. After the TiO2 process is performed in the process chamber (302), exhaust gas containing unreacted Ti(OCH2CH3)4 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) are operated. By the operation of the exhaust pipe plasma reactor (710), the Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (710) to produce TiO2, which is a stabilized powder. The TiO2 powder generated in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (710) decomposes the NF3 gas supplied by the exhaust pipe plasma source gas supply unit (747) through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. * ) is generated. Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a remote plasma source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (710) and the remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the TiO2 powder is excited fluorine atoms (F *It reacts with ) to gasify and form TiF4. Accordingly, it is possible to prevent the TiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0285] Next, the operation of the plasma equipment (709a) is described as follows when a ZrO2 process is performed in a process chamber (302) using a process gas containing a Zr-containing precursor. In this embodiment, (C5H5)Zr(N(CH3)2)3 is used as the Zr-containing precursor. After the ZrO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Zr(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) are operated. (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) by the operation of the exhaust pipe plasma reactor (710) reacts with oxygen in the exhaust pipe plasma reactor (710) to produce ZrO2, which is a stabilized powder. The ZrO2 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (710) decomposes the NF3 gas supplied by the exhaust pipe plasma source gas supply unit (747) through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. * ) is generated. Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a remote plasma source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (710) and the remote plasma reactor (350). *) is supplied to the powder collection trap (348). In the powder collection trap (348), the ZrO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form ZrF4. Accordingly, it is possible to prevent the ZrO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0286] Next, the operation of the plasma equipment (709a) is described as follows when an HfO2 process is performed using a process gas containing an Hf-containing precursor in the process chamber (302). In this embodiment, (C5H5)Hf(N(CH3)2)3 is used as the Hf-containing precursor. After the HfO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Hf(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) are operated. (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) by the operation of the exhaust pipe plasma reactor (710) reacts with oxygen in the exhaust pipe plasma reactor (710) to produce HfO2, which is a stabilized powder. The HfO2 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (710) decomposes the NF3 gas supplied by the exhaust pipe plasma source gas supply unit (747) through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. * ) is generated. Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a remote plasma source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. *Generates ) excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (710) and the remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the HfO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form HfF4. Accordingly, it is possible to prevent HfO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0287] Next, the operation of the plasma equipment (709a) is described as follows when an Nb2O5 process is performed in a process chamber (302) using a process gas containing an Nb-containing precursor. In this embodiment, (C5H5)Nb(N(CH3)2)3 is used as the Nb-containing precursor. After the Nb2O5 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Nb(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) are operated. (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) by the operation of the exhaust pipe plasma reactor (710) reacts with oxygen in the exhaust pipe plasma reactor (710) to produce Nb2O5, which is a stabilized powder. The Nb2O5 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (710) decomposes the NF3 gas supplied by the exhaust pipe plasma source gas supply unit (747) through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. *) is generated. Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a remote plasma source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (710) and the remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the Nb2O5 powder is excited fluorine atoms (F * It reacts with ) to gasify and form NbF5. Accordingly, it is possible to prevent the Nb2O5 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0288] Next, the operation of the plasma equipment (709a) is described as follows when a Ta2O5 process is performed in a process chamber (302) using a process gas containing a Ta-containing precursor. In this embodiment, Ta(OC2H5)5 is used as the Ta-containing precursor. After the Ta2O5 process is performed in the process chamber (302), exhaust gas containing unreacted Ta(OC2H5)5 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) are operated. By the operation of the exhaust pipe plasma reactor (710), the Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (710) to produce Ta2O5, which is a stabilized powder. The Ta2O5 powder generated in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (710) decomposes the NF3 gas supplied by the exhaust pipe plasma source gas supply unit (747) through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. * ) is generated. Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a remote plasma source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (710) and the remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the Ta2O5 powder is excited fluorine atoms (F *It reacts with ) to gasify and form TaF5. Accordingly, Ta2O5 powder can be prevented from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0289] [Gas Treatment Example 3A]

[0290] Gas treatment example 3A is in which an exhaust pipe plasma reactor (710) is used to produce stabilized powder by oxidation, and a reaction active species produced in a remote plasma reactor (350) is used to gasify the powder.

[0291] First, the operation of the plasma equipment (709a) is described as follows when a SiO2 process is performed in a process chamber (302) using a process gas containing TEOS (Si(OC2H5)4). After the SiO2 process is performed in the process chamber (302), exhaust gas containing unreacted TEOS is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) operate. The exhaust pipe plasma reactor (710) receives oxygen from the exhaust pipe plasma source gas supply unit (747) and the excited oxygen (O * ) generates. The TEOS contained in the exhaust gas discharged from the semiconductor process chamber (302) generates oxygen (O) excited in the exhaust pipe plasma reactor (710). * It reacts with ) to produce SiO2, which is a stabilized powder. The SiO2 powder produced in the exhaust pipe plasma reactor (310) is discharged from the exhaust pipe plasma reactor (310), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a remote plasma source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. *Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), as much SiO2 powder as possible is collected and excited fluorine atoms (F) are collected. * It reacts with ) to gasify and form SiF4.

[0292] Next, the operation of the plasma equipment (709a) is described as follows when a TiO2 process is performed in the process chamber (302) using a process gas containing Ti(OCH2CH3)4. After the TiO2 process is performed in the process chamber (302), exhaust gas containing unreacted Ti(OCH2CH3)4 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) are operated. The exhaust pipe plasma reactor (710) receives oxygen from the exhaust pipe plasma source gas supply unit (747) and the excited oxygen (O * ) generates. The Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (302) generates oxygen (O) excited in the exhaust pipe plasma reactor (710). * TiO2, which is a stabilized powder, is produced by reacting with ). The TiO2 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a remote plasma source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). *) is supplied to the powder collection trap (348). In the powder collection trap (348), as much TiO2 powder as possible is collected and excited fluorine atoms (F) are collected. * It reacts with ) to gasify and form TiF4.

[0293] Next, the operation of the plasma equipment (709a) is described as follows when a ZrO2 process is performed in the process chamber (302) using a process gas containing (C5H5)Zr(N(CH3)2)3. After the ZrO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Zr(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) are operated. The exhaust pipe plasma reactor (710) receives oxygen from the exhaust pipe plasma source gas supply unit (747) and the excited oxygen (O * It generates ). The (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) generates oxygen (O) excited in the exhaust pipe plasma reactor (710). * ZrO2, which is a stabilized powder, is produced by reacting with ). The ZrO2 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a remote plasma source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), as much ZrO2 powder as possible is collected and excited fluorine atoms (F) are collected.* It reacts with ) to gasify and form ZrF4.

[0294] Next, the operation of the plasma equipment (709a) is described as follows when an HfO2 process is performed in the process chamber (302) using a process gas containing (C5H5)Hf(N(CH3)2)3. After the HfO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Hf(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) are operated. The exhaust pipe plasma reactor (710) receives oxygen from the exhaust pipe plasma source gas supply unit (747) and the excited oxygen (O * It generates ). The (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) is excited oxygen (O) in the exhaust pipe plasma reactor (710). * HfO2, which is a stabilized powder, is produced by reacting with ). The HfO2 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a remote plasma source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), as much HfO2 powder as possible is collected and excited fluorine atoms (F) are collected. * It reacts with ) to gasify and form HfF4.

[0295] Next, the operation of the plasma equipment (709a) is described as follows when an Nb2O5 process is performed in the process chamber (302) using a process gas containing (C5H5)Nb(N(CH3)2)3. After the Nb2O5 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Nb(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) operate. The exhaust pipe plasma reactor (710) receives oxygen from the exhaust pipe plasma source gas supply unit (747) and receives excited oxygen (O * It generates ). The (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) generates oxygen (O) excited in the exhaust pipe plasma reactor (710). * It reacts with ) to produce Nb2O5, a stabilized powder. The Nb2O5 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a remote plasma source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), as much Nb2O5 powder as possible is collected and excited fluorine atoms (F) are collected. * It reacts with ) to gasify and form NbF5.

[0296] Next, the operation of the plasma equipment (709a) when a Ta2O5 process using a process gas containing Ta(OC2H5)5 is performed in the process chamber (302) is described as follows. After the Ta2O5 process is performed in the process chamber (302), exhaust gas containing unreacted Ta(OC2H5)5 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) are operated. The exhaust pipe plasma reactor (710) receives oxygen from the exhaust pipe plasma source gas supply unit (747) and the excited oxygen (O * ...generates ) Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber (302) is oxygen (O) excited in the exhaust pipe plasma reactor (710). * Ta2O5, a stabilized powder, is produced by reacting with ). The Ta2O5 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a remote plasma source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), as much Ta2O5 powder as possible is collected and excited fluorine atoms (F) are collected. * It reacts with ) to gasify and form TaF5.

[0297] FIG. 19 illustrates, as a block diagram, the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 7B embodiment of the present invention. Referring to FIG. 19, the semiconductor manufacturing facility (700B) includes semiconductor manufacturing equipment (301) in which a semiconductor manufacturing process for manufacturing semiconductor devices is performed, gas purification equipment (303) for purifying gas discharged from the semiconductor manufacturing equipment (301), exhaust equipment (305) for discharging gas from the semiconductor manufacturing equipment (301) and flowing it to the gas purification equipment (303), and plasma equipment (709b) according to the 7B embodiment of the present invention for processing gas discharged from the semiconductor manufacturing equipment (301) to prevent a decrease in gas fluidity. Since the remaining components of the semiconductor manufacturing facility (700B), excluding the plasma equipment (709b), are generally the same as the semiconductor manufacturing facility (700A) shown in FIG. 18, only the plasma equipment (709b) is described here.

[0298] The plasma equipment (709b) comprises an exhaust pipe plasma reactor (710) that generates a plasma reaction for exhaust gas discharged from a semiconductor process chamber (302), an exhaust pipe plasma source gas supply unit (747) that supplies source gas to the exhaust pipe plasma reactor (710), a powder collection trap (348) installed on the chamber exhaust pipe (307) to collect powder, a remote plasma reactor (350) that generates reaction active species supplied to the powder collection trap (348) using plasma, a remote plasma source gas supply unit (390) that supplies source gas to the remote plasma reactor (350), a power supply unit (170) that produces power required for the operation of the exhaust pipe plasma reactor (710) and the remote plasma reactor (350), a switch unit (180b) that electrically connects the power supply unit (170) to either the exhaust pipe plasma reactor (710) or the remote plasma reactor (350), and a switch It is equipped with a control unit (190b) that controls the operation of the device (180b).

[0299] The exhaust pipe plasma reactor (710) is largely identical to the configuration of the exhaust pipe plasma reactor (710) described in the embodiment shown in FIG. 18, so a detailed description thereof is omitted here.

[0300] The exhaust pipe plasma source gas supply unit (747) is largely identical to the configuration of the exhaust pipe plasma source gas supply unit (747) described in the embodiment shown in FIG. 18, so a detailed description thereof is omitted here.

[0301] The powder collection trap (348) is largely identical to the configuration of the powder collection trap (348) described in the embodiment shown in FIG. 18, so a detailed description thereof is omitted here.

[0302] The remote plasma reactor (350) is largely identical to the configuration of the remote plasma reactor (350) described in the embodiment shown in FIG. 18, so a detailed description thereof is omitted here.

[0303] The remote plasma source gas supply unit (390) is largely identical to the configuration of the remote plasma source gas supply unit (390) described in the embodiment shown in FIG. 18, so a detailed description thereof is omitted here.

[0304] Since the power supply unit (170) is largely the same as the configuration of the power supply unit (170) described in the embodiment shown in FIG. 17, a detailed description thereof is omitted here.

[0305] Since the switch device (180b) is largely the same as the configuration of the switch device (180b) described in the embodiment shown in FIG. 17, a detailed description thereof is omitted here.

[0306] The control unit (190b) is largely identical to the configuration of the control unit (190b) described in the embodiment shown in FIG. 17, so a detailed description thereof is omitted here.

[0307] Hereinafter, the operation of the plasma equipment (709b) according to various processes performed in the process chamber (302) will be described in detail. The plasma equipment (709b) can operate with the following two examples of gas processing.

[0308] [Gas Treatment Example 1B]

[0309] Gas treatment example 1B is in which both the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) are used to produce stabilized powder by oxidation.

[0310] First, the operation of the plasma equipment (709b) when a SiO2 process is performed using a process gas containing a Si-containing precursor in the process chamber (302) is described as follows. In this embodiment, TEOS is used as the Si-containing precursor. After the SiO2 process is performed in the process chamber (302), exhaust gas containing unreacted TEOS is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0311] When only the exhaust pipe plasma reactor (710) is operating, the TEOS contained in the exhaust gas discharged from the semiconductor process chamber (302) is excited oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supply unit (747) in the exhaust pipe plasma reactor (710). *SiO2, which is a stabilized powder, is produced by reacting with ). The SiO2 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710) and flows along the chamber exhaust pipe (307) to be collected in the powder collection trap (348). As much powder as possible is collected in the powder collection trap (348), the amount of powder flowing into the vacuum pump (306) is minimized.

[0312] When only the remote plasma reactor (350) is operating, the remote plasma reactor (350) receives oxygen from the remote plasma source gas supply (390) and the excited oxygen atoms (O * ) is generated and supplied to the powder collection trap (348). The TEOS contained in the exhaust gas discharged from the semiconductor process chamber (302) is excited oxygen atoms (O) supplied from the remote plasma reactor (350) in the powder collection trap (348). * SiO2, which is a stabilized powder that reacts with ) is produced and collected in the powder collection trap (348). As much powder as possible is collected in the powder collection trap (348), the amount of powder flowing into the vacuum pump (306) is minimized.

[0313] Next, the operation of the plasma equipment (709b) is described as follows when a TiO2 process is performed in a process chamber (302) using a process gas containing a Ti-containing precursor. In this embodiment, it is described that Ti(OCH2CH3)4 is used as the Ti-containing precursor. After the TiO2 process is performed in the process chamber (302), exhaust gas containing unreacted Ti(OCH2CH3)4 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0314] When only the exhaust pipe plasma reactor (710) is operating, the Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (302) is an excited oxygen atom (O) generated by the oxygen supplied by the exhaust pipe plasma source gas supply unit (347) in the exhaust pipe plasma reactor (710). * TiO2, which is a stabilized powder, is produced by reacting with ). The TiO2 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710) and flows along the chamber exhaust pipe (307) to be collected in the powder collection trap (348). As much powder as possible is collected in the powder collection trap (348), the amount of powder flowing into the vacuum pump (306) is minimized.

[0315] When only the remote plasma reactor (350) is operating, the remote plasma reactor (350) receives oxygen from the remote plasma source gas supply (390) and the excited oxygen atoms (O * ) is generated and supplied to the powder collection trap (348). The Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (302) is excited oxygen atoms (O) supplied from the remote plasma reactor (350) in the powder collection trap (348). * TiO2, which is a stabilized powder produced by reacting with ), is collected in the powder collection trap (348). As much powder as possible is collected in the powder collection trap (348), the amount of powder flowing into the vacuum pump (306) is minimized.

[0316] Next, the operation of the plasma equipment (709b) is described as follows when a ZrO2 process is performed in a process chamber (302) using a process gas containing a Zr-containing precursor. In this embodiment, (C5H5)Zr(N(CH3)2)3 is used as the Zr-containing precursor. After the ZrO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Zr(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0317] When only the exhaust pipe plasma reactor (710) is operating, the (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) is excited oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supply unit (747) in the exhaust pipe plasma reactor (710). * ZrO2, which is a stabilized powder, is produced by reacting with ). The ZrO2 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710) and flows along the chamber exhaust pipe (307) to be collected in the powder collection trap (348). As much powder as possible is collected in the powder collection trap (348), the amount of powder flowing into the vacuum pump (306) is minimized.

[0318] When only the remote plasma reactor (350) is operating, the remote plasma reactor (350) receives oxygen from the remote plasma source gas supply (390) and the excited oxygen atoms (O *) is generated and supplied to the powder collection trap (348). The (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) is excited oxygen atoms (O) supplied from the remote plasma reactor (350) in the powder collection trap (348). * ZrO2, which is a stabilized powder produced by reacting with ), is collected in the powder collection trap (348). As much powder as possible is collected in the powder collection trap (348), the amount of powder flowing into the vacuum pump (306) is minimized.

[0319] Next, the operation of the plasma equipment (709b) is described as follows when an HfO2 process is performed in the process chamber (302) using a process gas containing an Hf-containing precursor. In this embodiment, (C5H5)Hf(N(CH3)2)3 is used as the Hf-containing precursor. After the HfO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Hf(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0320] When only the exhaust pipe plasma reactor (710) is operating, the (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) is excited oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supply unit (347) in the exhaust pipe plasma reactor (710). *HfO2, which is a stabilized powder, is produced by reacting with ). The HfO2 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710) and flows along the chamber exhaust pipe (307) to be collected in the powder collection trap (348). As much powder as possible is collected in the powder collection trap (348), the amount of powder flowing into the vacuum pump (306) is minimized.

[0321] When only the remote plasma reactor (350) is operating, the remote plasma reactor (350) receives oxygen from the remote plasma source gas supply (390) and the excited oxygen atoms (O * ) is generated and supplied to the powder collection trap (348). The (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) is excited oxygen atoms (O) supplied from the remote plasma reactor (350) in the powder collection trap (348). * HfO2, which is a stabilized powder that reacts with ) is produced and collected in the powder collection trap (348). As much powder as possible is collected in the powder collection trap (348), the amount of powder flowing into the vacuum pump (306) is minimized.

[0322] Next, the operation of the plasma equipment (709b) is described as follows when an Nb2O5 process is performed in a process chamber (302) using a process gas containing an Nb-containing precursor. In this embodiment, (C5H5)Nb(N(CH3)2)3 is used as the Nb-containing precursor. After the Nb2O5 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Nb(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0323] When only the exhaust pipe plasma reactor (710) is operating, the (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) is excited oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supply unit (747) in the exhaust pipe plasma reactor (710). * Nb2O5, which is a stabilized powder, is produced by reacting with ). The Nb2O5 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710) and flows along the chamber exhaust pipe (307) to be collected in the powder collection trap (348). As much powder as possible is collected in the powder collection trap (348), the amount of powder flowing into the vacuum pump (306) is minimized.

[0324] When only the remote plasma reactor (350) is operating, the remote plasma reactor (350) receives oxygen from the remote plasma source gas supply (390) and the excited oxygen atoms (O *It generates ) and supplies it to the powder collection trap (348). The (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) is excited oxygen atoms (O) supplied from the remote plasma reactor (350) in the powder collection trap (348). * Nb2O5, which is a stabilized powder produced by reacting with ), is collected in the powder collection trap (348). As much powder as possible is collected in the powder collection trap (348), the amount of powder flowing into the vacuum pump (306) is minimized.

[0325] Next, the operation of the plasma equipment (709b) is described as follows when a Ta2O5 process is performed in a process chamber (302) using a process gas containing a Ta-containing precursor. In this embodiment, Ta(OC2H5)5 is used as the Ta-containing precursor. After the Ta2O5 process is performed in the process chamber (302), exhaust gas containing unreacted Ta(OC2H5)5 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0326] When only the exhaust pipe plasma reactor (710) is operating, Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber (302) is excited oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supply unit (747) in the exhaust pipe plasma reactor (710). *Ta2O5 powder is produced by reacting with ) to stabilize the powder. The Ta2O5 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710) and flows along the chamber exhaust pipe (307) to be collected in the powder collection trap (348). As much powder as possible is collected in the powder collection trap (348), the amount of powder flowing into the vacuum pump (306) is minimized.

[0327] When only the remote plasma reactor (350) is operating, the remote plasma reactor (350) receives oxygen from the remote plasma source gas supply (390) and the excited oxygen atoms (O * ) is generated and supplied to the powder collection trap (348). The Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber (302) is excited oxygen atoms (O) supplied from the remote plasma reactor (350) in the powder collection trap (348). * Ta2O5, which is a stabilized powder produced by reacting with ), is collected in the powder collection trap (348). As much powder as possible is collected in the powder collection trap (348), the amount of powder flowing into the vacuum pump (306) is minimized.

[0328] [Gas Treatment Example 2B]

[0329] Gas treatment example 2B is used for powder gasification of the reaction active species generated in the exhaust pipe plasma reactor (710) and the remote plasma reactor (350).

[0330] First, the operation of the plasma equipment (709b) when a SiO2 process is performed using a process gas containing a Si-containing precursor in the process chamber (302) is described as follows. In this embodiment, TEOS is used as the Si-containing precursor. After the SiO2 process is performed in the process chamber (302), exhaust gas containing unreacted TEOS is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0331] When only the exhaust pipe plasma reactor (710) is operating, TEOS contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (710) to produce SiO2, which is a stabilized powder. The SiO2 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (710) decomposes the NF3 gas supplied by the exhaust pipe plasma source gas supply unit (747) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * It generates ) excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (710). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the SiO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form SiF4. Accordingly, it is possible to prevent the SiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0332] When only the remote plasma reactor (350) is operated, TEOS contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce SiO2 powder, and the produced SiO2 powder is collected in the powder collection trap (348). Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the SiO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form SiF4. Accordingly, it is possible to prevent the SiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0333] Next, the operation of the plasma equipment (709b) is described as follows when a TiO2 process is performed in a process chamber (302) using a process gas containing a Ti-containing precursor. In this embodiment, it is described that Ti(OCH2CH3)4 is used as the Ti-containing precursor. After the TiO2 process is performed in the process chamber (302), exhaust gas containing unreacted Ti(OCH2CH3)4 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0334] When only the exhaust pipe plasma reactor (710) is operating, Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (710) to produce TiO2, which is a stabilized powder. The TiO2 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (710) decomposes the NF3 gas supplied by the exhaust pipe plasma source gas supply unit (747) through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. * It generates ) excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (710). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the TiO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form TiF4. Accordingly, it is possible to prevent the TiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0335] When only the remote plasma reactor (350) is operated, Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce TiO2 powder, and the produced TiO2 powder is collected in the powder collection trap (348). Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the TiO2 powder is excited fluorine atoms (F *It reacts with ) to gasify and form TiF4. Accordingly, it is possible to prevent the TiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0336] Next, the operation of the plasma equipment (709b) is described as follows when a ZrO2 process is performed in a process chamber (302) using a process gas containing a Zr-containing precursor. In this embodiment, (C5H5)Zr(N(CH3)2)3 is used as the Zr-containing precursor. After the ZrO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Zr(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0337] When only the exhaust pipe plasma reactor (710) is operating, (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (710) to produce ZrO2, which is a stabilized powder. The ZrO2 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (710) decomposes the NF3 gas supplied by the exhaust pipe plasma source gas supply unit (747) through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. * It generates ) excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (710). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the ZrO2 powder is excited fluorine atoms (F *It reacts with ) to gasify and form ZrF4. Accordingly, it is possible to prevent the ZrO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0338] When only the remote plasma reactor (350) is operated, (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce ZrO2 powder, and the produced ZrO2 powder is collected in the powder collection trap (348). Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the ZrO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form ZrF4. Accordingly, it is possible to prevent the ZrO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0339] Next, the operation of the plasma equipment (709b) is described as follows when an HfO2 process is performed in the process chamber (302) using a process gas containing an Hf-containing precursor. In this embodiment, (C5H5)Hf(N(CH3)2)3 is used as the Hf-containing precursor. After the HfO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Hf(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0340] When only the exhaust pipe plasma reactor (710) is operating, (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (710) to produce HfO2, which is a stabilized powder. The HfO2 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (710) decomposes the NF3 gas supplied by the exhaust pipe plasma source gas supply unit (747) through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. * It generates ) excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (710). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the HfO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form HfF4. Accordingly, it is possible to prevent HfO2 powder from accumulating in the exhaust equipment (105) including the vacuum pump (306) and reducing fluidity.

[0341] When only the remote plasma reactor (350) is operated, (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce HfO2 powder, and the produced HfO2 powder is collected in the powder collection trap (348). Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the HfO2 powder is excited fluorine atoms (F * It reacts with ) to gasify and form HfF4. Accordingly, it is possible to prevent HfO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0342] Next, the operation of the plasma equipment (709b) is described as follows when an Nb2O5 process is performed in a process chamber (302) using a process gas containing an Nb-containing precursor. In this embodiment, (C5H5)Nb(N(CH3)2)3 is used as the Nb-containing precursor. After the Nb2O5 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Nb(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0343] When only the exhaust pipe plasma reactor (710) is operating, (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (710) to produce Nb2O5, which is a stabilized powder. The Nb2O5 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (710) decomposes the NF3 gas supplied by the exhaust pipe plasma source gas supply unit (747) through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. * It generates ) excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (710). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the Nb2O5 powder is excited fluorine atoms (F * It reacts with ) to gasify and form NbF5. Accordingly, it is possible to prevent the Nb2O5 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0344] When only the remote plasma reactor (350) is operated, (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce Nb2O5 powder, and the produced Nb2O5 powder is collected in the powder collection trap (348). Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the Nb2O5 powder is excited fluorine atoms (F *It reacts with ) to gasify and form NbF5. Accordingly, it is possible to prevent the Nb2O5 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0345] Next, the operation of the plasma equipment (709b) is described as follows when a Ta2O5 process is performed in a process chamber (302) using a process gas containing a Ta-containing precursor. In this embodiment, Ta(OC2H5)5 is used as the Ta-containing precursor. After the Ta2O5 process is performed in the process chamber (302), exhaust gas containing unreacted Ta(OC2H5)5 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (710) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0346] When only the exhaust pipe plasma reactor (710) is operating, Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (710) to produce Ta2O5, which is a stabilized powder. The Ta2O5 powder produced in the exhaust pipe plasma reactor (710) is discharged from the exhaust pipe plasma reactor (710), flows along the chamber exhaust pipe (307), and is collected in the powder collection trap (348). Additionally, the exhaust pipe plasma reactor (710) decomposes the NF3 gas supplied by the exhaust pipe plasma source gas supply unit (747) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * It generates ) excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (710). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the Ta2O5 powder is excited fluorine atoms (F *It reacts with ) to gasify and form TaF5. Accordingly, Ta2O5 powder can be prevented from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0347] When only the remote plasma reactor (350) is operated, Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce Ta2O5 powder, and the produced Ta2O5 powder is collected in the powder collection trap (348). Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied to the powder collection trap (348). In the powder collection trap (348), the Ta2O5 powder is excited fluorine atoms (F * It reacts with ) to gasify and form TaF5. Accordingly, Ta2O5 powder can be prevented from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0348] FIG. 20 illustrates, as a block diagram, the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 8A embodiment of the present invention. Referring to FIG. 20, the semiconductor manufacturing facility (800A) includes semiconductor manufacturing equipment (301) in which a semiconductor manufacturing process for manufacturing semiconductor devices is performed, gas purification equipment (303) for purifying gas discharged from the semiconductor manufacturing equipment (301), exhaust equipment (305) for discharging gas from the semiconductor manufacturing equipment (301) and flowing it to the gas purification equipment (303), and plasma equipment (809a) according to the 8A embodiment of the present invention for processing gas discharged from the semiconductor manufacturing equipment (301) to prevent a decrease in gas fluidity. The remaining components of the semiconductor manufacturing facility (800A), excluding the plasma equipment (809a), are generally the same as the semiconductor manufacturing facility (400A) shown in FIG. 12.

[0349] Plasma equipment (809a) comprises an exhaust pipe plasma reactor (810) that generates a plasma reaction for exhaust gas discharged from a semiconductor process chamber (302), an exhaust pipe plasma source gas supply unit (847) that supplies source gas to the exhaust pipe plasma reactor (810), a cooler (448) installed on the chamber exhaust pipe (307), a remote plasma reactor (350) that generates reaction active species supplied to the chamber exhaust pipe (307) using plasma, a remote plasma source gas supply unit (390) that supplies gas to the remote plasma reactor (350), a power supply unit (170) that produces power required for the exhaust pipe plasma reactor (810) and the remote plasma reactor (350), a power distributor (180a) that distributes power produced by the power supply unit (170) and supplies it to the exhaust pipe plasma reactor (810) and the remote plasma reactor (350), and a device that controls the operation of the power distributor (180a). It is equipped with a controller (190a).

[0350] The exhaust pipe plasma reactor (810) receives source gas for exhaust pipe plasma from the exhaust pipe plasma source gas supply unit (847). Since the configuration of the exhaust pipe plasma reactor (810) receiving source gas for exhaust pipe plasma from the exhaust pipe plasma source gas supply unit (847) is generally the same as the configuration of the exhaust pipe plasma reactor (310) described in the embodiment shown in FIG. 6, a detailed description thereof is omitted here.

[0351] The exhaust pipe plasma source gas supply unit (847) stores the source gas for the exhaust pipe plasma supplied to the exhaust pipe plasma reactor (810) and supplies the stored source gas for the exhaust pipe plasma to the exhaust pipe plasma reactor (810). In this embodiment, the exhaust pipe plasma source gas supply unit (847) is described as supplying nitrogen trifluoride (NF3) or oxygen (O2) as the source gas for the exhaust pipe plasma to the exhaust pipe plasma reactor (810).

[0352] Since the cooler (448) is largely the same as the cooler (448) described in the embodiment shown in FIG. 12, a detailed description thereof is omitted here.

[0353] The remote plasma reactor (350) is largely identical to the configuration of the remote plasma reactor (350) described in the embodiment shown in FIG. 6, so a detailed description thereof is omitted here.

[0354] The remote plasma source gas supply unit (390) is largely identical to the configuration of the remote plasma source gas supply unit (390) described in the embodiment shown in FIG. 6, so a detailed description thereof is omitted here.

[0355] The power supply unit (170) produces alternating current power required for the operation of the exhaust pipe plasma reactor (810) and the remote plasma reactor (350). The alternating current power produced by the power supply unit (170) is distributed through a power distributor (180a) and supplied to the exhaust pipe plasma reactor (810) and the remote plasma reactor (350). In this embodiment, the alternating current power produced by the power supply unit (170) is described as radio frequency power, which is a high frequency.

[0356] The power distributor (180a) distributes high-frequency alternating current power produced by the power supply unit (170) and supplies it to the exhaust pipe plasma reactor (810) and the remote plasma reactor (350), respectively, thereby enabling the exhaust pipe plasma reactor (810) and the remote plasma reactor (350) to operate simultaneously. The power distributor (180a) is controlled by the controller (190a) to adjust the ratio of power supplied to the exhaust pipe plasma reactor (810) and power supplied to the remote plasma reactor (350).

[0357] The controller (190a) controls the operation of the power distributor (180a). By controlling the operation of the power distributor (180a) by the controller (190a), the ratio of the power supplied to the exhaust pipe plasma reactor (810) and the power supplied to the remote plasma reactor (350) from the AC power produced by the power supply unit (170) can be adjusted.

[0358] Although not shown in the drawing, a reactor impedance matching part that matches the impedance between the power supply unit (170) and the exhaust pipe plasma reactor (810) and an electrode impedance matching part that matches the impedance between the power supply unit (170) and the remote plasma reactor (350) may be further provided.

[0359] Hereinafter, the operation of the plasma equipment (809a) according to various processes performed in the process chamber (302) will be explained in detail.

[0360] First, the operation of the plasma equipment (809a) is described as follows when a SiO2 process is performed using a process gas containing a Si-containing precursor in a process chamber (302). In this embodiment, TEOS is used as the Si-containing precursor. After the SiO2 process is performed in the process chamber (302), exhaust gas containing unreacted TEOS is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (810) and the remote plasma reactor (350) are operated. By the operation of the exhaust pipe plasma reactor (810), the TEOS contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (810) to produce SiO2, which is a stabilized powder. The SiO2 powder generated in the exhaust pipe plasma reactor (810) is discharged from the exhaust pipe plasma reactor (810) and flows along the chamber exhaust pipe (307). Additionally, the exhaust pipe plasma reactor (810) decomposes the NF3 gas supplied by the exhaust pipe plasma source gas supply unit (847) through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. * ) is generated. Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (810) and the cooler (448). The SiO2 powder generated in the exhaust pipe plasma reactor (810) is excited fluorine atoms (F) injected into the chamber exhaust pipe (307). * ) and excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (810) *It reacts with ) to gasify and form SiF4. Accordingly, it is possible to prevent the SiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0361] Next, the operation of the plasma equipment (809a) is described as follows when a TiO2 process is performed in a process chamber (302) using a process gas containing a Ti-containing precursor. In this embodiment, it is described that Ti(OCH2CH3)4 is used as the Ti-containing precursor. After the TiO2 process is performed in the process chamber (302), exhaust gas containing unreacted Ti(OCH2CH3)4 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (810) and the remote plasma reactor (350) are operated. By the operation of the exhaust pipe plasma reactor (810), the Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (810) to produce TiO2, which is a stabilized powder. The TiO2 powder generated in the exhaust pipe plasma reactor (810) is discharged from the exhaust pipe plasma reactor (810) and flows along the chamber exhaust pipe (307). Additionally, the exhaust pipe plasma reactor (810) decomposes the NF3 gas supplied by the exhaust pipe plasma source gas supply unit (847) through a plasma reaction to produce excited fluorine atoms (F3) which are reaction active species. * ) is generated. Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). *) is supplied from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (810) and the cooler (448). The TiO2 powder generated in the exhaust pipe plasma reactor (810) is excited fluorine atoms (F) injected into the chamber exhaust pipe (307). * ) and excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (810) * It reacts with ) to gasify and form TiF4. Accordingly, it is possible to prevent the TiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0362] Next, the operation of the plasma equipment (809a) is described as follows when a ZrO2 process is performed in a process chamber (302) using a process gas containing a Zr-containing precursor. In this embodiment, (C5H5)Zr(N(CH3)2)3 is used as the Zr-containing precursor. After the ZrO2 process is performed in the chamber (302), exhaust gas containing unreacted (C5H5)Zr(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (810) and the remote plasma reactor (350) are operated. (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) by the operation of the exhaust pipe plasma reactor (810) reacts with oxygen in the exhaust pipe plasma reactor (810) to produce ZrO2, which is a stabilized powder. The ZrO2 powder produced in the exhaust pipe plasma reactor (810) is discharged from the exhaust pipe plasma reactor (810) and flows along the chamber exhaust pipe (307). In addition, the exhaust pipe plasma reactor (810) decomposes the NF3 gas supplied by the exhaust pipe plasma source gas supply unit (847) through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. *) is generated. Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (810) and the cooler (448). The ZrO2 powder generated in the exhaust pipe plasma reactor (810) is excited fluorine atoms (F) injected into the chamber exhaust pipe (307). * ) and excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (810) * It reacts with ) to gasify and form ZrF4. Accordingly, it is possible to prevent the ZrO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0363] Next, the operation of the plasma equipment (809a) is described as follows when an HfO2 process is performed in a process chamber (302) using a process gas containing an Hf-containing precursor. In this embodiment, (C5H5)Hf(N(CH3)2)3 is used as the Hf-containing precursor. After the HfO2 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Hf(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (810) and the remote plasma reactor (350) are operated. (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) by the operation of the exhaust pipe plasma reactor (310) reacts with oxygen in the exhaust pipe plasma reactor (810) to produce HfO2, which is a stabilized powder. The HfO2 powder produced in the exhaust pipe plasma reactor (810) is discharged from the exhaust pipe plasma reactor (810) and flows along the chamber exhaust pipe (307). In addition, the exhaust pipe plasma reactor (810) decomposes the NF3 gas supplied by the exhaust pipe plasma source gas supply unit (847) through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. * ) is generated. Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (810) and the cooler (448). The HfO2 powder generated in the exhaust pipe plasma reactor (810) is excited fluorine atoms (F) injected into the chamber exhaust pipe (307). * ) and excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (810)* It reacts with ) to gasify and form HfF4. Accordingly, it is possible to prevent HfO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0364] Next, the operation of the plasma equipment (809a) is described as follows when an Nb2O5 process is performed in a process chamber (302) using a process gas containing an Nb-containing precursor. In this embodiment, (C5H5)Nb(N(CH3)2)3 is used as the Nb-containing precursor. After the Nb2O5 process is performed in the process chamber (302), exhaust gas containing unreacted (C5H5)Nb(N(CH3)2)3 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (810) and the remote plasma reactor (350) are operated. (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (302) by the operation of the exhaust pipe plasma reactor (810) reacts with oxygen in the exhaust pipe plasma reactor (810) to produce Nb2O5, which is a stabilized powder. The Nb2O5 powder produced in the exhaust pipe plasma reactor (810) is discharged from the exhaust pipe plasma reactor (810) and flows along the chamber exhaust pipe (307). In addition, the exhaust pipe plasma reactor (810) decomposes the NF3 gas supplied by the exhaust pipe plasma source gas supply unit (847) through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. * ) is generated. Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). *) is supplied from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (810) and the cooler (448). The Nb2O5 powder generated in the exhaust pipe plasma reactor (810) is excited fluorine atoms (F) injected into the chamber exhaust pipe (307). * ) and excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (810) * It reacts with ) to gasify and form NbF5. Accordingly, it is possible to prevent the Nb2O5 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0365] Next, the operation of the plasma equipment (809a) is described as follows when a Ta2O5 process is performed in a process chamber (302) using a process gas containing a Ta-containing precursor. In this embodiment, Ta(OC2H5)5 is used as the Ta-containing precursor. After the Ta2O5 process is performed in the process chamber (302), exhaust gas containing unreacted Ta(OC2H5)5 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (810) and the remote plasma reactor (350) are operated. By the operation of the exhaust pipe plasma reactor (810), the Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (810) to produce Ta2O5, which is a stabilized powder. The Ta2O5 powder generated in the exhaust pipe plasma reactor (810) is discharged from the exhaust pipe plasma reactor (810) and flows along the chamber exhaust pipe (307). Additionally, the exhaust pipe plasma reactor (810) decomposes the NF3 gas supplied by the exhaust pipe plasma source gas supply unit (847) through a plasma reaction to produce excited fluorine atoms (F3), which are reaction active species. *) is generated. Nitrogen trifluoride (NF3) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (810) and the cooler (448). The Ta2O5 powder generated in the exhaust pipe plasma reactor (810) is excited fluorine atoms (F) injected into the chamber exhaust pipe (307). * ) and excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (810) * It reacts with ) to gasify and form TaF5. Accordingly, Ta2O5 powder can be prevented from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0366] Next, the operation of the plasma equipment (809a) when the ACL process is performed in the process chamber (302) is described as follows. After the ACL process is performed in the process chamber (302), exhaust gas containing hydrogenated amorphous carbon (aC:H) is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), the exhaust pipe plasma reactor (810) and the remote plasma reactor (350) are operated. The hydrogenated amorphous carbon (aC:H) contained in the exhaust gas discharged from the semiconductor process chamber (302) by the operation of the exhaust pipe plasma reactor (810) is carbon atoms (C) excited by the plasma reaction in the exhaust pipe plasma reactor (810). * ) and excited hydrogen atoms (H * It is decomposed into ). Excited carbon atoms (C) generated in the exhaust pipe plasma reactor (810). * ) and excited hydrogen atoms (H* ) is discharged from the exhaust pipe plasma reactor (810) and flows along the chamber exhaust pipe (307). In addition, the exhaust pipe plasma reactor (810) decomposes the O2 gas supplied by the exhaust pipe plasma source gas supply unit (847) through a plasma reaction to produce excited oxygen atoms (O₂), which are reaction active species. * Oxygen (O2) is supplied as a source gas to the remote plasma reactor (350), and the remote plasma reactor (350) decomposes the O2 gas through a plasma reaction to produce excited oxygen atoms (O2) which are reaction active species. * Generates ) excited oxygen atoms (O) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (310) and the cooler (448). Excited carbon atoms (C) generated in the exhaust pipe plasma reactor (810) * ) and excited hydrogen atoms (H * ) and excited oxygen atoms (O) injected into the chamber exhaust pipe (307) * A substitution (oxidation) reaction occurs between them to produce carbon dioxide gas (CO2), carbon monoxide gas (CO), and water vapor (H2O). Accordingly, hydrogenated amorphous carbon (aC:H) can be prevented from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0367] FIG. 21 illustrates, as a block diagram, the schematic configuration of a semiconductor manufacturing facility equipped with plasma equipment according to the 8B embodiment of the present invention. Referring to FIG. 21, the semiconductor manufacturing facility (800B) includes semiconductor manufacturing equipment (301) in which a semiconductor manufacturing process for manufacturing semiconductor devices is performed, gas purification equipment (303) for purifying gas discharged from the semiconductor manufacturing equipment (301), exhaust equipment (305) for discharging gas from the semiconductor manufacturing equipment (301) and flowing it to the gas purification equipment (303), and plasma equipment (809b) according to the 8B embodiment of the present invention for processing gas discharged from the semiconductor manufacturing equipment (301) to prevent a decrease in gas fluidity. The remaining components of the semiconductor manufacturing facility (800B), excluding the plasma equipment (809b), are generally the same as the semiconductor manufacturing facility (800A) shown in FIG. 20.

[0368] Plasma equipment (809b) comprises an exhaust pipe plasma reactor (810) that generates a plasma reaction for exhaust gas discharged from a semiconductor process chamber (302), an exhaust pipe plasma source gas supply unit (847) that supplies source gas to the exhaust pipe plasma reactor (810), a cooler (448) installed on the chamber exhaust pipe (307), a remote plasma reactor (350) that generates reaction active species supplied to the chamber exhaust pipe (307) using plasma, a remote plasma source gas supply unit (390) that supplies source gas to the remote plasma reactor (350), a power supply unit (170) that produces power required for the operation of the exhaust pipe plasma reactor (810) and the remote plasma reactor (350), a switch unit (180b) that electrically connects the power supply unit (170) to either the exhaust pipe plasma reactor (810) or the remote plasma reactor (350), and a switch unit (180b) that controls the operation of the switch unit (180b). It is equipped with a control unit (190b).

[0369] The exhaust pipe plasma reactor (810) is largely identical to the configuration of the exhaust pipe plasma reactor (810) described in the embodiment shown in FIG. 20, so a detailed description thereof is omitted here.

[0370] The exhaust pipe plasma source gas supply unit (847) is largely identical to the configuration of the exhaust pipe plasma source gas supply unit (847) described in the embodiment shown in FIG. 20, so a detailed description thereof is omitted here.

[0371] Since the cooler (448) is largely the same as the cooler (448) described in the embodiment shown in FIG. 20, a detailed description thereof is omitted here.

[0372] The remote plasma reactor (350) is largely identical to the configuration of the remote plasma reactor (350) described in the embodiment shown in FIG. 20, so a detailed description thereof is omitted here.

[0373] The remote plasma source gas supply unit (390) is largely identical to the configuration of the remote plasma source gas supply unit (390) described in the embodiment shown in FIG. 20, so a detailed description thereof is omitted here.

[0374] Since the power supply unit (170) is largely the same as the configuration of the power supply unit (170) described in the embodiment shown in FIG. 20, a detailed description thereof is omitted here.

[0375] Since the switch device (180b) is largely the same as the configuration of the switch device (180b) described in the embodiment shown in FIG. 19, a detailed description thereof is omitted here.

[0376] The control unit (190b) is largely identical to the configuration of the control unit (190b) described in the embodiment shown in FIG. 19, so a detailed description thereof is omitted here.

[0377] Hereinafter, the operation of the plasma equipment (809b) according to various processes performed in the process chamber (302) will be explained in detail.

[0378] First, the operation of the plasma equipment (809b) when a SiO2 process is performed using a process gas containing a Si-containing precursor in the process chamber (302) is described as follows. In this embodiment, TEOS is used as the Si-containing precursor. After the SiO2 process is performed in the process chamber (302), exhaust gas containing unreacted TEOS is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (810) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0379] When only the exhaust pipe plasma reactor (810) is operating, TEOS contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (810) to produce SiO2, which is a stabilized powder. The SiO2 powder produced in the exhaust pipe plasma reactor (810) is discharged from the exhaust pipe plasma reactor (810) and flows along the chamber exhaust pipe (307). Additionally, the exhaust pipe plasma reactor (810) decomposes the NF3 gas supplied by the exhaust pipe plasma source gas supply unit (847) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * It generates ). The SiO2 powder generated in the exhaust pipe plasma reactor (810) is excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (810). * It reacts with ) to gasify and form SiF4. Accordingly, it is possible to prevent the SiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0380] When only the remote plasma reactor (350) is operated, TEOS contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce SiO2 powder. Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated in a remote plasma reactor (350). * ) is supplied from the chamber exhaust pipe (307) to the section between the exhaust pipe plasma reactor (810) and the cooler (448). SiO2 powder is excited fluorine atoms (F) injected into the chamber exhaust pipe (307). * It reacts with ) to gasify and form SiF4. Accordingly, it is possible to prevent the SiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0381] Next, the operation of the plasma equipment (809b) is described as follows when a TiO2 process is performed in a process chamber (302) using a process gas containing a Ti-containing precursor. In this embodiment, it is described that the Ti-containing precursor Ti(OCH2CH3)4 is used. After the TiO2 process is performed in the process chamber (302), exhaust gas containing unreacted Ti(OCH2CH3)4 is discharged from the semiconductor process chamber (302) by the operation of the vacuum pump (306). While the exhaust gas is being discharged from the semiconductor process chamber (302), only one of the exhaust pipe plasma reactor (810) and the remote plasma reactor (350) is operated according to the operating state of the switch device (180b) controlled by the controller (190b).

[0382] When only the exhaust pipe plasma reactor (810) is operating, Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen in the exhaust pipe plasma reactor (810) to produce TiO2, which is a stabilized powder. The TiO2 powder produced in the exhaust pipe plasma reactor (810) is discharged from the exhaust pipe plasma reactor (810) and flows along the chamber exhaust pipe (307). Additionally, the exhaust pipe plasma reactor (810) decomposes the NF3 gas supplied by the exhaust pipe plasma source gas supply unit (847) through a plasma reaction to produce excited fluorine atoms (F), which are reaction active species. * It generates ). The TiO2 powder generated in the exhaust pipe plasma reactor (810) is excited fluorine atoms (F) generated in the exhaust pipe plasma reactor (810). * It reacts with ) to gasify and form TiF4. Accordingly, it is possible to prevent the TiO2 powder from accumulating in the exhaust equipment (305) including the vacuum pump (306) and reducing fluidity.

[0383] When only the remote plasma reactor (350) is operated, Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (302) reacts with oxygen to produce TiO2 powder. Nitrogen trifluoride (NF3) is supplied to the remote plasma reactor (350) as a source gas, and the remote plasma reactor (350) decomposes the NF3 gas through a plasma reaction to produce excited fluorine atoms (F) which are reaction active species. * Generates ) excited fluorine atoms (F) generated ...

Claims

1. Equipment for treating exhaust gas discharged from a semiconductor process chamber in which a semiconductor manufacturing process using process gas is performed, through a chamber exhaust pipe connecting the semiconductor process chamber and the vacuum pump by a vacuum pump, wherein An exhaust pipe plasma reactor installed on the chamber exhaust pipe to generate plasma in the exhaust gas and remove target components contained in the exhaust gas; A remote plasma reactor that generates plasma to decompose a source gas for remote plasma and produces a remote plasma gas containing reaction-active species; A power supply unit that produces alternating current power required for the operation of the above-mentioned exhaust pipe plasma reactor and the above-mentioned remote plasma reactor; and It includes a power distributor that distributes AC power produced by the above power supply device and supplies it to the exhaust pipe plasma reactor and the remote plasma reactor, The above remote plasma is supplied by exhaust gas discharged from the above exhaust pipe plasma reactor, Plasma equipment for semiconductor manufacturing facilities.

2. In Claim 1, It further includes a controller that controls the operation of the above power distributor, The controller controls the power distributor to adjust the ratio of the power supplied to the exhaust pipe plasma reactor and the power supplied to the remote plasma reactor from the AC power produced by the power supply device. Plasma equipment for semiconductor manufacturing facilities.

3. In Claim 1, It further includes a cooler installed on the chamber exhaust pipe to be located downstream of the exhaust pipe plasma reactor to lower the temperature of the exhaust gas, and The above remote plasma gas is supplied from the chamber exhaust pipe between the exhaust pipe plasma reactor and the cooler to additionally remove the above target components that were not removed in the exhaust pipe plasma reactor. Plasma equipment for semiconductor manufacturing facilities.

4. In Claim 3, It further includes an exhaust pipe plasma gas supplyer that supplies source gas for the exhaust pipe plasma to the exhaust pipe plasma reactor, and The above exhaust pipe plasma reactor decomposes the source gas for the exhaust pipe plasma to generate reaction active species, Plasma equipment for semiconductor manufacturing facilities.

5. In Claim 4, The above remote plasma gas is supplied from the chamber exhaust pipe between the exhaust pipe plasma reactor and the vacuum pump to additionally remove the target component that was not removed in the exhaust pipe plasma reactor. Plasma equipment for semiconductor manufacturing facilities.

6. In Claim 5, It further includes an exhaust pipe plasma gas supplyer that supplies source gas for the exhaust pipe plasma to the exhaust pipe plasma reactor, and The above exhaust pipe plasma reactor decomposes the source gas for the exhaust pipe plasma to generate reaction active species, Plasma equipment for semiconductor manufacturing facilities.

7. In Claim 1, It includes a powder collection trap installed on the chamber exhaust pipe so as to be located downstream of the exhaust pipe plasma reactor to collect powder contained in the exhaust gas, and The above remote plasma gas is supplied from the chamber exhaust pipe between the powder collection trap and the vacuum pump to additionally remove the target component that was not removed in the exhaust pipe plasma reactor. Plasma equipment for semiconductor manufacturing facilities.

8. In Claim 7, It further includes an exhaust pipe plasma gas supplyer that supplies source gas for the exhaust pipe plasma to the exhaust pipe plasma reactor, and The above exhaust pipe plasma reactor decomposes the source gas for the exhaust pipe plasma to generate reaction active species, Plasma equipment for semiconductor manufacturing facilities.

9. Equipment for generating plasma to process a substrate in a semiconductor process chamber in which a semiconductor manufacturing process using process gas is performed, An external plasma reactor that plasma treats the process gas outside the semiconductor process chamber to generate a semiconductor process plasma supplied to the process chamber; A chamber plasma electrode installed in the semiconductor process chamber to generate a plasma for a semiconductor process by generating a plasma discharge for the process gas within the semiconductor process chamber; A power supply device that produces alternating current power required for the operation of the above external plasma reactor and the plasma discharge; and A power distributor comprising a power distributor that distributes AC power produced by the above power supply device and supplies it to the external plasma reactor and the chamber plasma electrode. Plasma equipment for semiconductor manufacturing facilities.

10. In Claim 9, It further includes a controller that controls the operation of the above power distributor, The controller controls the power distributor to adjust the ratio of the power supplied to the external plasma reactor and the power supplied to the chamber plasma electrode from the AC power produced by the power supply device. Plasma equipment for semiconductor manufacturing facilities.

11. Equipment for generating plasma in a semiconductor manufacturing facility equipped with a semiconductor process chamber in which a semiconductor manufacturing process using a process gas is performed, An external plasma reactor that generates plasma supplied to the semiconductor process chamber from outside the semiconductor process chamber; An exhaust pipe plasma reactor installed on a chamber exhaust pipe through which exhaust gas discharged from the semiconductor process chamber flows, for plasma treating the exhaust gas; A power supply unit that produces alternating current power required for the operation of the above-mentioned external plasma reactor and the operation of the above-mentioned exhaust pipe plasma reactor; and A power distributor comprising a power distributor that distributes AC power produced by the above power supply device and supplies it to the external plasma reactor and the exhaust pipe plasma reactor. Plasma equipment for semiconductor manufacturing facilities.

12. In Claim 11, It further includes a controller that controls the operation of the above power distributor, The controller controls the power distributor to adjust the ratio of the power supplied to the external plasma reactor and the power supplied to the exhaust pipe plasma reactor from the AC power produced by the power supply device. Plasma equipment for semiconductor manufacturing facilities.

13. Equipment for treating exhaust gas discharged from a semiconductor process chamber in which a semiconductor manufacturing process using process gas is performed, through a chamber exhaust pipe connecting the semiconductor process chamber and the vacuum pump by a vacuum pump, wherein An exhaust pipe plasma reactor installed on the chamber exhaust pipe to generate plasma in the exhaust gas and remove target components contained in the exhaust gas; A remote plasma reactor that generates plasma to decompose a source gas for remote plasma and produces a remote plasma gas containing reaction-active species; A power supply device that produces power required for the operation of the above exhaust pipe plasma reactor and the above remote plasma reactor; and It includes a switch device that electrically connects the power supply device to either the exhaust pipe plasma reactor or the remote plasma reactor so that power produced by the power supply device is selectively supplied to either the exhaust pipe plasma reactor or the remote plasma reactor, and The remote plasma gas is supplied between the semiconductor process chamber and the vacuum pump on the exhaust gas flow line, Plasma equipment for semiconductor manufacturing facilities.

14. In Claim 13, It further includes a powder collection trap installed on the chamber exhaust pipe so as to be located downstream of the exhaust pipe plasma reactor to collect powder contained in the exhaust gas, and In a state where the above power is selectively supplied to the remote plasma reactor by the above switch device, the remote plasma gas is supplied to the powder capture trap to additionally remove the above target component that was not removed in the exhaust pipe plasma reactor. Plasma equipment for semiconductor manufacturing facilities.

15. In Claim 13, It further includes a cooler installed on the chamber exhaust pipe to be located downstream of the exhaust pipe plasma reactor to lower the temperature of the exhaust gas, and In a state where the above power is selectively supplied to the remote plasma reactor by the above switch device, the remote plasma gas is supplied from the chamber exhaust pipe between the exhaust pipe plasma reactor and the cooler, thereby additionally removing the above target component that was not removed in the exhaust pipe plasma reactor. Plasma equipment for semiconductor manufacturing facilities.

16. In Claim 13, In a state where the above power is selectively supplied to the remote plasma reactor by the above switch device, the remote plasma gas is supplied from the chamber exhaust pipe between the exhaust pipe plasma reactor and the vacuum pump, thereby additionally removing the above target component that was not removed in the exhaust pipe plasma reactor. Plasma equipment for semiconductor manufacturing facilities.

17. In Claim 13, It further includes a powder collection trap installed on the chamber exhaust pipe so as to be located downstream of the exhaust pipe plasma reactor to collect powder contained in the exhaust gas, and In a state where the above power is selectively supplied to the remote plasma reactor by the above switch device, the remote plasma gas is supplied from the chamber exhaust pipe between the powder collection trap and the vacuum pump to additionally remove the above target component that was not removed in the exhaust pipe plasma reactor. Plasma equipment for semiconductor manufacturing facilities.

18. In Claim 13, In a state where the above power is selectively supplied to the remote plasma reactor by the above switch device, the remote plasma gas is supplied between the process chamber and the exhaust pipe plasma reactor, Plasma equipment for semiconductor manufacturing facilities.

19. In Claim 18, The above reaction active species reacts with the powder component in the exhaust pipe plasma reactor to gasify the powder component, Plasma equipment for semiconductor manufacturing facilities.

20. In Claim 13, It further includes an exhaust pipe plasma gas supplyer that supplies source gas for the exhaust pipe plasma to the exhaust pipe plasma reactor, and In a state where the above power is selectively supplied to the exhaust pipe plasma reactor by the above switch device, the source gas for the exhaust pipe plasma is supplied to the exhaust pipe plasma reactor, and the exhaust pipe plasma reactor decomposes the source gas for the exhaust pipe plasma to generate reaction active species, Plasma equipment for semiconductor manufacturing facilities.

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