Substrate processing method and substrate processing apparatus

Abstract

The present invention relates to a substrate processing method and a substrate processing apparatus and, more specifically, to a substrate processing method and a substrate processing apparatus for improving thin film characteristics of a substrate. Disclosed in the present invention is a substrate processing method comprising: a pressurization step (S100) of increasing a process pressure from a first pressure (P1) to a second pressure (P2) by supplying a pressurized gas to a processing space (S); a heat treatment step (S200) of performing heat treatment by heating a substrate (1) to a second temperature (T2) in the atmosphere at the second pressure (P2); a temperature lowering step (S300) of lowering the temperature of the substrate (1) from the second temperature (T2) to a third temperature (T3) after the heat treatment step (S200); and a depressurization step (S400) of reducing the process pressure from a second pressure (P2) to a third pressure (P3) after the temperature lowering step (S300).

Description

Substrate processing method and substrate processing apparatus

[0001] The present invention relates to a substrate processing method and a substrate processing apparatus, and more specifically, to a substrate processing method and a substrate processing apparatus for improving the thin film characteristics of a substrate.

[0002] Generally, a method for manufacturing a semiconductor device may include a process of forming a film through deposition.

[0003] However, conventionally, there was no technology particularly preferred by the industry or known to be perfectly verified for removing impurities from the film and improving film characteristics after the formation of a semiconductor device film.

[0004] General conventional technology removes impurities by selecting a method that uses less gas containing impurities when forming a film of a semiconductor device at atmospheric or low pressure.

[0005] Meanwhile, with the emergence of 3D semiconductor devices and semiconductor products with high aspect ratios, it has become necessary to lower the film deposition temperature or use sources with high impurity content in order to satisfy step coverage specifications, which has made it increasingly difficult to remove impurities from the film.

[0006] Accordingly, a substrate treatment method has been disclosed in which annealing is performed under high pressure by supplying pressurized gas to remove impurities present in the film without deterioration of film characteristics after film formation, but in this case, there is a problem in that the pressurized gas supplied for high-pressure annealing is removed without remaining in the film.

[0007] The objective of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of improving thin film characteristics during a high-pressure annealing process in order to solve the above-mentioned problems.

[0008] The present invention is created to achieve the above-mentioned objectives of the present invention, and the present invention discloses a substrate processing method comprising: a pressurizing step (S100) of supplying pressurized gas to a processing space (S) to increase the process pressure from a first pressure (P1) to a second pressure (P2); a heat treatment step (S200) of heating the temperature of a substrate (1) to a second temperature (T2) in the atmosphere of the second pressure (P2) to perform heat treatment; a temperature reduction step (S300) of lowering the temperature of the substrate (1) from the second temperature (T2) to a third temperature (T3) after the heat treatment step (S200); and a pressure reduction step (S400) of reducing the process pressure from the second pressure (P2) to the third pressure (P3) after the temperature reduction step (S300).

[0009] The above pressurization step (S100) can raise the temperature of the substrate (1) from the first temperature (T1) to the second temperature (T2).

[0010] The above pressurization step (S100) may include a pressure increase step for increasing the process pressure from the first pressure (P1) to the second pressure (P2), and a temperature increase step for increasing the temperature of the substrate (1) from the first temperature (T1) to the second temperature (T2) during or after the pressure increase step.

[0011] The above temperature reduction step (S300) can lower the process pressure from the second pressure (P2) to the fourth pressure (P4).

[0012] The above temperature reduction step (S300) can lower the temperature of the substrate (1) from the second temperature (T2) to the third temperature (T3) while maintaining the temperature of the heater unit (20) that heats the substrate (1).

[0013] The above temperature reduction step (S300) can lower the temperature of the substrate (1) to the third temperature (T3) by separating the substrate (1) from the heater part (20).

[0014] The above temperature reduction step (S300) can lower the temperature of the substrate (1) to a third temperature (T3) by bringing the substrate (1) into a cooling member (42) that is provided within the processing space (S) and is relatively lower than the temperature of the substrate (1).

[0015] The above pressure reduction step (S400) can lower the process pressure from the fourth pressure (P4) to the third pressure (P3) by stopping the supply of the pressurized gas.

[0016] The first pressure (P1) is a pressure lower than atmospheric pressure, and the second pressure (P2) may be a pressure higher than atmospheric pressure.

[0017] The above second pressure (P2) may be 2 ATM or more and 5 ATM or less.

[0018] The above fourth pressure (P4) may be greater than atmospheric pressure.

[0019] The above third pressure (P3) may be greater than the above first pressure (P1) and less than atmospheric pressure.

[0020] The above pressurized gas may include hydrogen (H).

[0021] The above third temperature (T3) may be 430℃ or lower.

[0022] In addition, the present invention discloses a substrate processing method comprising: a pressurizing step (S100) of supplying pressurized gas to a processing space (S) to increase the process pressure from a first pressure (P1) to a second pressure (P2); a heat treatment step (S200) of performing heat treatment by heating a substrate (1) to a second temperature (T2) through a heater unit (20) within the processing space (S) in the atmosphere of the second pressure (P2); and a temperature lowering step (S300) of lowering the temperature of the substrate (1) from the second temperature (T2) to a third temperature (T3) while maintaining the temperature of the heater unit (20) after the heat treatment step (S200).

[0023] The above temperature reduction step (S300) can lower the temperature of the substrate (1) to the third temperature (T3) by separating the substrate (1) from the heater part (20).

[0024] In addition, the present invention discloses a substrate processing device comprising: a process chamber (10) having a processing space (S) formed therein; a heater unit (20) installed in the process chamber (10) to support a substrate (1) within the processing space (S) and to heat the substrate (1); a pressure control unit (30) to supply and exhaust pressurized gas within the processing space (S) to regulate the pressure within the processing space (S); a lift pin unit (50) provided below the heater unit (20) to be movable relative to the heater unit (20) to support the substrate (1) by separating it upward from the heater unit (20); and a control unit that controls the upward movement of the lift pin unit (50). The control unit lowers the temperature of the substrate (1) by raising the lift pin unit (50) while maintaining high pressure in the processing space (S) to separate the substrate (1) upward from the heater unit (20).

[0025] It may additionally include an inner lid (40) that is installed by penetrating the upper surface of the process chamber (10) and is lowered to come into close contact with the bottom surface of the process chamber (10) to form a sealed processing space (S) in which the heater part (20) is located.

[0026] The inner lid section (40) may include an inner lid (41) installed within the process chamber (10) and in close contact with the bottom surface, and a cooling member (42) provided on the bottom surface of the inner lid (41), exposed to the processing space (S), and maintaining a temperature lower than that of the heater section (20).

[0027] The control unit can control the lifting height of the lift pin unit (50) so that the substrate (1) is separated from the heater unit (20) by a first distance (D1) and separated from the cooling member (42) by a second distance (D2) greater than the first distance (D1).

[0028] The heater unit (20) performs heat treatment by heating the substrate (1) before the lifting pin unit (50) rises, and the pressure control unit (30) can lower the pressure of the processing space (S) by stopping the supply of the pressurized gas after the temperature of the substrate (1) has dropped through the lifting of the lifting pin unit (50).

[0029] The substrate processing method and substrate processing apparatus according to the present invention have the advantage of being able to improve substrate and thin film characteristics through high-pressure annealing of the substrate.

[0030] In particular, the substrate processing method and substrate processing apparatus according to the present invention have the advantage of being able to retain the pressurized gas, whose activity has been reduced according to the lowered temperature, within the substrate by rapidly lowering the temperature of the substrate in a short period of time under a high-pressure state in which pressurized gas is sufficiently present during the high-pressure annealing process of the substrate.

[0031] FIG. 1 is a flowchart showing a substrate processing method according to the present invention.

[0032] Figure 2 is a graph showing the changes in gas flow rate, distance between the substrate and the heater, and temperature of the substrate, respectively, of the substrate processing method according to Figure 1.

[0033] Figure 3 is a graph showing the change in pressure within the processing space of the substrate processing method according to Figure 1.

[0034] FIG. 4 is a cross-sectional view showing a substrate processing apparatus according to the present invention.

[0035] Hereinafter, a substrate processing method and a substrate processing apparatus according to the present invention will be described with reference to the attached drawings.

[0036] A substrate processing device according to the present invention comprises, as illustrated in FIG. 4, a process chamber (10) having a processing space (S) formed inside; a heater unit (20) installed in the process chamber (10) to support a substrate (1) within the processing space (S) and to heat the substrate (1); a pressure control unit (30) to supply and exhaust pressurized gas within the processing space (S) to control the pressure within the processing space (S); a lift pin unit (50) provided below the heater unit (20) to be movable relative to the heater unit (20) to support the substrate (1) by separating it upward from the heater unit (20); and a control unit to control the upward movement of the lift pin unit (50).

[0037] In addition, the substrate processing device according to the present invention may further include an inner lead part (40) that is installed by penetrating the upper surface of the process chamber (10) and forms a sealed processing space (S) in which a heater part (20) is located inside by being in close contact with the bottom surface of the process chamber (10) through downward movement.

[0038] Here, the substrate (1) to be processed can be understood to include all substrates used in display devices such as LCD, LED, OLED, semiconductor substrate, solar cell substrate, glass substrate, etc.

[0039] The above process chamber (10) is configured such that a processing space (S) is formed inside, and various configurations are possible.

[0040] For example, the process chamber (10) may include a chamber body (12) with an open top and a top lid (13) that covers the open top of the chamber body (12) to form a sealed internal space together with the chamber body (12).

[0041] Additionally, the process chamber (10) may include a bottom surface forming the bottom of the internal space and an installation groove formed to allow a heater part (20) to be installed on the bottom surface.

[0042] Additionally, the process chamber (10) may further include a gate valve (14) for opening and closing a gate (19) formed on one side of the chamber body (12) to move a substrate (1) in and out.

[0043] The above chamber body (12) has an open top and can form a sealed internal space together with the top lid (13) described later.

[0044] At this time, the chamber body (12) may be composed of a metal material including aluminum, or as another example, may be composed of a quartz material, and may have a rectangular shape like a conventionally disclosed chamber.

[0045] The top lead (13) may be configured to be coupled to the upper side of the chamber body (12) which has an open top, and to form a sealed internal space together with the chamber body (12).

[0046] At this time, the top lead (13) may be formed in a flat rectangular shape corresponding to the shape of the chamber body (12) and may be made of the same material as the chamber body (12).

[0047] In addition, the top lead (13) may have a through hole formed therein so that the inner lead part (40), which will be described later, can be installed through it.

[0048] Meanwhile, it is also obvious that the above top lead (13) configuration may be omitted and the chamber body (12) may be formed as an integrated unit that forms a sealed internal space.

[0049] The above process chamber (10) may include a bottom surface in which an inner lower surface forms the bottom of the internal space, and an installation groove formed so that a heater part (20) described later is installed on the bottom surface.

[0050] More specifically, as shown in FIG. 4, the process chamber (10) may have a step formed in the center of the lower surface corresponding to the heater part (20) described later, and a bottom surface may be formed at the edge of the installation groove.

[0051] That is, the process chamber (10) has an installation groove formed with a step on the inner lower surface for installing a heater part (20), and the other part is defined as a bottom surface and can be formed at a height higher than the installation groove.

[0052] At this time, the gate valve (14) can close or open the gate (19) by being in contact with or released from the chamber body (12) through vertical and horizontal driving and forward and backward driving, and as another example, the gate (19) can be opened or closed through a single driving in a diagonal direction, and in this process, various types of conventionally disclosed driving methods such as cylinders, cams, and electromagnetics may be applied.

[0053] The heater unit (20) is configured to be installed in a process chamber (10) to support a substrate (1) within a processing space (S) and to heat the substrate (1), and various configurations are possible.

[0054] That is, the heater part (20) can support the substrate (1) being processed by placing the substrate (1) on its upper surface and fix it during the substrate processing process.

[0055] In addition, the heater unit (20) is equipped with a heater inside to form a temperature atmosphere of the processing space (S) for substrate processing and can heat the substrate (1) while in direct contact.

[0056] For example, the heater unit (20) may include a substrate support plate (21) which is circular on a flat surface on which the substrate (1) is placed, and a substrate support post (22) which penetrates the lower surface of the process chamber (10) and is connected to the substrate support plate (21).

[0057] Additionally, the heater unit (20) may include a heater installed within the substrate support plate (21) to heat the substrate (1) placed on the substrate support plate (21).

[0058] The above substrate support plate (21) is configured such that a substrate (1) is placed on its upper surface, and may be a plate configuration that is circular in planar shape corresponding to the shape of the substrate (1).

[0059] At this time, the substrate support plate (21) is equipped with a heater inside, so that it can heat the substrate (1) while creating a process temperature for substrate processing in the processing space (S), and the process temperature at this time may be about 400°C to 550°C.

[0060] The above substrate support post (22) is configured to penetrate the lower surface of the process chamber (10) and be connected to the substrate support plate (21), and various configurations are possible.

[0061] The above substrate support post (22) can be coupled with the substrate support plate (21) by penetrating the lower surface of the process chamber (10), and various wires for supplying power to the heater can be installed inside.

[0062] The pressure control unit (30) above is configured to control the pressure within the processing space (S) by supplying and exhausting pressurized gas within the processing space (S), and various configurations are possible.

[0063] The pressure control unit (30) above may be configured to communicate with the processing space (S) and to control the pressure in the processing space (S).

[0064] For example, the pressure control unit (30) may include a gas supply unit (31) that supplies pressurized gas to a processing space (S) and a gas exhaust unit (32) that performs exhaust for the processing space (S).

[0065] That is, the pressure control unit (30) can control the pressure in the processing space (S) by supplying pressurized gas to the processing space (S) and properly exhausting the processing space (S), thereby creating a pressure atmosphere of high pressure and low pressure in the processing space (S) by repeatedly changing it in a short period of time, or creating a high-pressure atmosphere of high pressure in a short period of time.

[0066] More specifically, the pressure control unit (30) can change the pressure of the processing space (S) at a high pressure change rate within a pressure range of 5 Bar to 0.01 Torr.

[0067] In particular, at this time, the pressure control unit (30) can increase the pressure of the processing space (S) from a first pressure (P1) to a second pressure (P2) so that the substrate processing method described later is performed, or decrease the pressure from the second pressure (P2) through a fourth pressure (P4) to a third pressure (P3).

[0068] The above gas supply unit (31) is configured to supply pressurized gas in communication with the processing space (S), and various configurations are possible.

[0069] For example, the gas supply unit (31) may include a gas injection unit (31b) that is exposed to the processing space (S) and injects process gas into the processing space (S), and a gas supply channel (31a) that penetrates the process chamber (10) and is connected to the gas injection unit (31b) and delivers pressurized gas supplied through the gas injection unit (31b).

[0070] At this time, the gas supply unit (31) can be installed adjacent to the heater unit (20) at the edge of the installation groove as shown in FIG. 4, thereby allowing process gas to be supplied to the processing space (S) while minimizing the volume of the processing space (S).

[0071] The above gas exhaust unit (32) is configured to perform exhaust for the processing space (S), and various configurations are possible.

[0072] For example, the above gas exhaust unit (32) can control the amount of exhaust for the processing space (S) and thereby control the pressure of the processing space (S) by including an external exhaust device (not shown) that is connected to the processing space (S) and installed externally.

[0073] More specifically, the gas exhaust unit (32) can regulate the pressure of the processing space (S) by regulating the amount of exhaust for the processing space (S) by appropriately adjusting the opening degree of the shut-off valve.

[0074] Meanwhile, the pressure control unit (30) can change the pressure of the processing space (S) to perform the substrate processing method described later, and in particular, the pressure control unit (30) can lower the pressure of the processing space (S) by stopping the supply of pressurized gas after the temperature of the substrate (1) has decreased through the raising of the lift pin unit (50).

[0075] That is, the pressure control unit (30) can perform high-pressure heat treatment on the substrate (1) by creating a second pressure (P2) state, and continuously supply pressurized gas to maintain the second pressure (P2), and then stop supplying pressurized gas to perform depressurization of the processing space (S) after the temperature of the substrate (1) has rapidly decreased due to the rise of the lift pin unit (50) described later while maintaining the high pressure state by blocking or appropriately controlling the exhaust of the processing space (S).

[0076] The inner lead section (40) is installed by penetrating the upper surface of the process chamber (10) and is configured to form a sealed processing space (S) in which the heater section (20) is located inside by being lowered to the bottom surface of the process chamber (10), and various configurations are possible.

[0077] That is, the inner lead part (40) is installed to be movable up and down above the heater part (20) in the internal space, and by coming into close contact with at least a part of the inner surface of the process chamber (10) through downward movement, a sealed processing space (S) can be formed between it and the inner lower surface of the process chamber (10) as needed.

[0078] Accordingly, the heater unit (20) can be located within the processing space (S), and substrate processing for the substrate (1) placed on the heater unit (20) can be performed within the processing space (S) with a minimized volume.

[0079] For example, the inner lead portion (40) can form a sealed processing space (S) between the bottom surface and the inner lower surface of the process chamber (10) by lowering the edge so that it comes into close contact with the bottom surface.

[0080] Meanwhile, as another example, it is also known that the inner lead portion (40) can form a sealed processing space (S) by lowering so that its edge comes into close contact with the inner surface of the process chamber (10).

[0081] The inner lid portion (40) forms a sealed processing space (S) by lowering its edge so that it adheres to the bottom surface, and a heater portion (20) installed in the installation groove can be placed within the processing space (S).

[0082] For example, the inner lid section (40) may include an inner lid (41) installed within the process chamber (10) and in close contact with the bottom surface, and a cooling member (42) provided on the bottom surface of the inner lid (41), exposed to the processing space (S), and maintaining a temperature lower than that of the heater section (20).

[0083] At this time, the cooling member (42) may be a temperature control unit separately provided on the bottom surface of the inner lid (41), and as another example, it may be configured to maintain a temperature relatively lower than that of the processing space (S) by being provided with a material having excellent thermal conductivity.

[0084] The above lift pin portion (50) is configured to be movable relative to the heater portion (20) at the lower part of the heater portion (20) and to support the substrate (1) by being spaced upward from the heater portion (20), and various configurations are possible.

[0085] The above lift pin part (50) may be configured to be installed to penetrate the support plate (21) within the processing space (S) and to move up and down through power to support the substrate (1) by separating it from the heater part (20) as it rises.

[0086] At this time, the lift pin part (50) can support the substrate (1) by separating it upward from the heater part (20) for swapping the substrate (1) with a robot that transports the external substrate (1) when introducing or taking out the substrate (1).

[0087] Furthermore, the lift pin portion (50) can rapidly lower the temperature of the substrate (1) in a short period of time by supporting the substrate (1) that is heated by contacting the heater portion (20) away from the heater portion (20) in order to rapidly lower the temperature of the substrate (1).

[0088] The above control unit is configured to control the vertical movement of the lift pin unit (50), and various configurations are possible.

[0089] At this time, the control unit can appropriately control the vertical movement of the lift pin unit (50) to rapidly lower the temperature of the substrate (1) within the high-pressure processing space (S) where the density of the pressurized gas is high, thereby reducing the activity of the pressurized gas as hydrogen (H2) gas and allowing the pressurized gas to remain on the substrate (1).

[0090] To this end, the control unit can lower the temperature of the substrate (1) by raising the lift pin unit (50) while maintaining the high pressure of the processing space (S) and separating the substrate (1) from the heater unit (20) upward.

[0091] At this time, the control unit controls the lifting height of the lift pin unit (50) so that the substrate (1) is separated from the heater unit (20) by a first distance (D1) and separated from the cooling member (42) by a second distance (D2) greater than the first distance (D1), thereby causing the substrate (1) to move away from the heater unit (20), which is the heat source, and at the same time move closer to the cooling member (42), which is at a relatively low temperature, so that the temperature of the substrate (1) can be rapidly lowered.

[0092] Meanwhile, unlike the above, it is also obvious that the height of the substrate (1) can be raised by setting it high so that the first distance (D1) is smaller than the second distance (D2).

[0093] A substrate processing method according to the present invention, implemented through the aforementioned substrate processing device, will be described below with reference to the attached drawings.

[0094] A substrate processing method according to the present invention comprises, as illustrated in FIG. 1, a pressurizing step (S100) of increasing the process pressure from a first pressure (P1) to a second pressure (P2) by supplying pressurizing gas to a processing space (S); a heat treatment step (S200) of performing heat treatment by heating the temperature of a substrate (1) to a second temperature (T2) in the atmosphere of the second pressure (P2); a temperature reduction step (S300) of decreasing the temperature of the substrate (1) from the second temperature (T2) to a third temperature (T3) after the heat treatment step (S200); and a pressure reduction step (S400) of decreasing the process pressure from the second pressure (P2) to the third pressure (P3) after the temperature reduction step (S300).

[0095] Here, the pressurized gas according to the present invention comprises any one of hydrogen (H), oxygen (O), nitrogen (N), chlorine (Cl), and fluorine (F), or a combination thereof, and may be, for example, hydrogen (H2) gas.

[0096] The above pressurization step (S100) may be a step of supplying pressurized gas to the processing space (S) to increase the process pressure from a first pressure (P1) to a second pressure (P2).

[0097] That is, the above pressurization step (S100) may be a step of supplying pressurized gas to form a high-pressure atmosphere within the processing space (S), wherein the first pressure (P1) may be a vacuum pressure and the second pressure (P2) may be a high pressure greater than atmospheric pressure.

[0098] For example, the first pressure (P1) may be a pressure lower than atmospheric pressure, and the second pressure (P2) may be a pressure higher than atmospheric pressure, and the second pressure (P2) may be 2 ATM or higher and 5 ATM or lower.

[0099] In addition, the above-mentioned pressurization step (S100) can raise the temperature of the substrate (1) from a first temperature (T1) to a second temperature (T2).

[0100] That is, the above-mentioned pressurization step (S100) can heat the substrate (1) through the heater unit (20) to raise the temperature of the substrate (1) from a first temperature (T1) to a second temperature (T2), thereby forming a process temperature for heat treatment of the substrate (1) and preparing for heat treatment of the substrate (1).

[0101] For example, the above-mentioned pressurization step (S100) may include a pressure increase step for increasing the process pressure from a first pressure (P1) to a second pressure (P2), and a temperature increase step for increasing the temperature of the substrate (1) from a first temperature (T1) to a second temperature (T2) during or after the pressure increase step.

[0102] Meanwhile, regarding the above temperature rise step, the temperature rise point may be during the pressure rise step, or as another example, the temperature rise point may be after the pressure rise step, so that the temperature rise is performed after the pressure rise.

[0103] In addition, the temperature increase step may have a temperature increase endpoint during the pressure increase step, so the temperature increase step and the pressure increase step may be performed simultaneously, or the temperature increase endpoint may be after the pressure increase step.

[0104] The above heat treatment step (S200) may be a step of performing heat treatment by heating the temperature of the substrate (1) to a second temperature (T2) in a second pressure (P2) atmosphere.

[0105] At this time, the heat treatment step (S200) may perform heat treatment by heating the temperature of the substrate (1) to a second temperature (T2) while the second pressure (P2) is maintained constant, and as another example, the pressure of the processing space (S) may be varied including increasing and decreasing pressure.

[0106] The above temperature reduction step (S300) may be a step of lowering the temperature of the substrate (1) from a second temperature (T2) to a third temperature (T3) after the heat treatment step (S200).

[0107] That is, the above temperature reduction step (S300) can lower the temperature of the substrate (1) from the second temperature (T2) to the third temperature (T3) while maintaining the temperature of the heater part (20) that heats the substrate (1).

[0108] For example, the temperature reduction step (S300) may be a temperature at which the activity of the pressurized gas is reduced, such that the temperature of the substrate (1) is a third temperature (T3). For example, the third temperature (T3) may be 350°C or higher and 430°C or lower, more preferably 350°C or higher and 390°C or lower.

[0109] Thus, the temperature lowering step (S300) can sufficiently retain hydrogen (H), which is the pressurized gas, in the substrate (1) even after the subsequent pressure reduction step (S400) by rapidly lowering the temperature of the substrate (1) at a rate of 2°C / s while the pressurized gas is sufficiently supplied into the processing space (S) and the pressure is at a high pressure above normal pressure, thereby reducing the activity of the pressurized gas.

[0110] For example, the temperature lowering step (S300) can lower the temperature of the substrate (1) to a third temperature (T3) by moving the substrate (1) away from the heater part (20) to a first distance (D1) while the substrate (1) and the heater part (20) are in contact and the initial distance (D0) is 0, as shown in FIG. 2.

[0111] Furthermore, the temperature reduction step (S300) can lower the temperature of the substrate (1) to a third temperature (T3) by bringing the substrate (1) into a cooling member (42) that is relatively lower than the temperature of the substrate (1) and is provided within the processing space (S).

[0112] Additionally, the above temperature reduction step (S300) can lower the process pressure from the second pressure (P2) to the fourth pressure (P4), wherein the fourth pressure (P4) is a pressure greater than the atmospheric pressure, and the temperature can be lowered slightly as the temperature decreases from the second pressure (P2).

[0113] In particular, the temperature reduction step (S300) can be performed such that, as illustrated in FIG. 2, the pressure of the supplied pressurized gas is maintained at the same first gas pressure (G1), and as the temperature decreases, the pressure can be reduced from the second pressure (P2) to the fourth pressure (P4).

[0114] The above pressure reduction step (S400) may be a step of reducing the process pressure from the second pressure (P2) to the third pressure (P3) after the temperature reduction step (S300).

[0115] At this time, the above-mentioned pressure reduction step (S400) may be a step of outgassing and moving by-products, etc. from the thin film within the substrate (1).

[0116] To this end, the above-mentioned pressure reduction step (S400) can lower the process pressure from the fourth pressure (P4) to the third pressure (P3) by stopping the supply of pressurized gas, and at this time, the fourth pressure (P4) is a pressure greater than the first pressure (P1) and less than the atmospheric pressure, so that by-products can be moved from inside the substrate (1) to the surface and discharged to the outside through pumping of the processing space (S).

[0117] At this time, the above-mentioned pressure reduction step (S400) can lower the pressure in the processing space (S) by stopping the supply of pressurized gas at the first gas pressure (G1), as shown in FIG. 2.

[0118] Meanwhile, the above-mentioned depressurization step (S400) may involve repeated pressurization and depressurization between the third pressure (P3) and the normal pressure (P0) or lower, as shown in FIG. 3.

[0119] In addition, the substrate processing method according to the present invention may include a processing preparation step (S500) in which, as shown in FIG. 3, the pressure of the processing space (S) is lowered from atmospheric pressure (P0) to a first pressure (P1) before the pressurization step (S100) to ventilate the atmosphere of the processing space (S) and prepare for substrate processing.

[0120] At this time, the above processing preparation step (S500) can pump the processing space (S) to a high vacuum of a first pressure (P1) lower than the third pressure (P3) to remove various by-products remaining in the processing space (S) and create an atmosphere for substrate processing in the processing space (S).

[0121] The effects of the substrate processing method and substrate processing apparatus according to the present invention will be explained below.

[0122] The substrate processing method and substrate processing apparatus according to the present invention have the advantage that by rapidly lowering the temperature of the substrate under a high-pressure state, the kinetic energy of hydrogen within the substrate and thin film, which is in a state of relatively high pressure within the processing space, is instantly reduced due to the low temperature and cannot escape to the outside of the substrate and thin film, but can remain there.

[0123] On the other hand, in the case where the pressure is lowered first under conventional high-temperature conditions, the pressure in the processing space becomes relatively low while the kinetic energy of hydrogen within the substrate and thin film is high, resulting in a problem where process gases containing hydrogen cannot remain in the substrate and thin film and instead diffuse (outgassing) toward the processing space.

[0124] Furthermore, the substrate processing method and substrate processing apparatus according to the present invention have the advantage of shortening process time and increasing efficiency because, in order to unload the processed substrate for external transport, the pressure and temperature must be lowered, and the temperature of the substrate can be rapidly lowered.

[0125]

[0126] The foregoing merely describes some preferred embodiments that can be implemented by the present invention. As is well known, the scope of the present invention should not be interpreted as being limited to the above embodiments, and all technical concepts that share the fundamental principles with the technical concept of the present invention described above shall be considered to be included within the scope of the present invention.

Claims

1. A pressurization step (S100) of supplying pressurized gas to a processing space (S) to increase the process pressure from a first pressure (P1) to a second pressure (P2); A heat treatment step (S200) for performing heat treatment by heating the temperature of the substrate (1) to a second temperature (T2) in the above second pressure (P2) atmosphere; After the heat treatment step (S200), a temperature reduction step (S300) for lowering the temperature of the substrate (1) from the second temperature (T2) to the third temperature (T3); A substrate processing method characterized by including a pressure reduction step (S400) for reducing the process pressure from a second pressure (P2) to a third pressure (P3) after the temperature reduction step (S300).

2. In Claim 1, The above pressurization step (S100) is, A substrate processing method characterized by raising the temperature of the substrate (1) from a first temperature (T1) to a second temperature (T2).

3. In Claim 1, The above pressurization step (S100) is, A substrate processing method characterized by including a pressure increase step for increasing the process pressure from the first pressure (P1) to the second pressure (P2), and a temperature increase step for increasing the temperature of the substrate (1) from the first temperature (T1) to the second temperature (T2) during or after the pressure increase step.

4. In Claim 1, The above temperature reduction step (S300) is, A substrate processing method characterized by lowering the process pressure from the second pressure (P2) to the fourth pressure (P4).

5. In Claim 1, The above temperature reduction step (S300) is, A substrate processing method characterized by lowering the temperature of the substrate (1) from the second temperature (T2) to the third temperature (T3) while maintaining the temperature of the heater unit (20) that heats the substrate (1).

6. In Claim 5, The above temperature reduction step (S300) is, A substrate processing method characterized by lowering the temperature of the substrate (1) to the third temperature (T3) by separating the substrate (1) from the heater unit (20).

7. In Claim 5, The above temperature reduction step (S300) is, A substrate processing method characterized by bringing the substrate (1) into a processing space (S) and a cooling member (42) that is relatively lower than the temperature of the substrate (1) to lower the temperature of the substrate (1) to a third temperature (T3).

8. In Claim 4, The above pressure reduction step (S400) is, A substrate processing method characterized by stopping the supply of the above pressurized gas to lower the process pressure from the fourth pressure (P3) to the third pressure (P3).

9. In Claim 1, The above first pressure (P1) is, It is a pressure lower than normal pressure, and The above second pressure (P2) is, A substrate processing method characterized by a pressure greater than atmospheric pressure.

10. In Claim 1, The above second pressure (P2) is, A substrate processing method characterized by being 2ATM or more and 5ATM or less.

11. In Claim 4, The above fourth pressure (P4) is, A substrate processing method characterized by being greater than atmospheric pressure.

12. In Claim 1, The above third pressure (P3) is, A substrate processing method characterized by being greater than the first pressure (P1) and less than the atmospheric pressure.

13. In Claim 1, The above pressurized gas is, A substrate treatment method characterized by including hydrogen (H).

14. In Claim 1, The above third temperature (T3) is, A substrate treatment method characterized by being 430℃ or lower.

15. A pressurization step (S100) of supplying pressurized gas to a processing space (S) to increase the process pressure from a first pressure (P1) to a second pressure (P2); A heat treatment step (S200) in which a substrate (1) is heated to a second temperature (T2) through a heater unit (20) in the processing space (S) in the atmosphere of the second pressure (P2) above to perform heat treatment; A substrate processing method characterized by including a temperature reduction step (S300) for lowering the temperature of the substrate (1) from the second temperature (T2) to the third temperature (T3) while maintaining the temperature of the heater part (20) after the heat treatment step (S200).

16. In Claim 15, The above temperature reduction step (S300) is, A substrate processing method characterized by lowering the temperature of the substrate (1) to the third temperature (T3) by separating the substrate (1) from the heater unit (20).

17. A process chamber (10) in which a processing space (S) is formed inside; A heater unit (20) installed in the process chamber (10) to support the substrate (1) within the processing space (S) and to heat the substrate (1); A pressure control unit (30) that supplies pressurized gas into the processing space (S) and exhausts it to regulate the pressure within the processing space (S); A lift pin part (50) provided at the lower part of the heater part (20) so as to be movable relative to the heater part (20), and supporting the substrate (1) by being spaced upward from the heater part (20); It includes a control unit that controls the vertical movement of the lift pin part (50), The above control unit is, A substrate processing device characterized by lowering the temperature of the substrate (1) by raising the lift pin part (50) while maintaining the high pressure of the processing space (S) and separating the substrate (1) upward from the heater part (20).

18. In Claim 17, A substrate processing device characterized by additionally including an inner lead part (40) that is installed penetrating the upper surface of the process chamber (10) and is in close contact with the bottom surface of the process chamber (10) through descent to form a sealed processing space (S) in which the heater part (20) is located inside.

19. In Claim 18, The above inner lead part (40) is, A substrate processing apparatus characterized by including an inner lead (41) installed within the process chamber (10) and in close contact with the bottom surface, and a cooling member (42) provided on the bottom surface of the inner lead (41), exposed to the processing space (S), and maintaining a temperature lower than that of the heater part (20).

20. In Claim 19, The above control unit is, A substrate processing device characterized by controlling the lifting height of the lift pin part (50) so that the substrate (1) is separated from the heater part (20) by a first distance (D1) and separated from the cooling member (42) by a second distance (D2) greater than the first distance (D1).

21. In Claim 17, The heater unit (20) above is, Heat treatment is performed by heating the substrate (1) before the lifting pin part (50) is raised, and The above pressure regulating unit (30) is, A substrate processing device characterized by lowering the pressure of the processing space (S) by stopping the supply of pressurized gas after the temperature of the substrate (1) has been lowered through the raising of the lift pin part (50).

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