Substrate processing apparatus

Abstract

The present invention relates to a substrate processing apparatus and, more particularly, to a substrate processing apparatus for cleansing a substrate in advance. The present invention provides a substrate processing apparatus comprising: a process chamber (100) including a chamber body (110) having an inner space (S1) and an opening (111) formed on the upper side thereof, and an upper lead part (120) installed on the chamber body (110) so as to cover the opening (111) and configured to introduce process gas from the outside; a support frame (200) installed in the opening (111), the center of the support frame (200) being vertically penetrated; a liner part (300) installed on the inner surface (201) of the support frame (200) so as to define a processing space (S2) therein, and configured to spray the process gas introduced through the upper lead part (120) to the processing space (S2); a substrate support part (400) for supporting a processed substrate (1) on the upper side thereof, the substrate support part (400) being installed to be able to move vertically such that, during substrate processing, the substrate (1) is located in the processing space (S2); and a remote plasma generation part (700) provided on the upper lead unit (120) to convert the process gas into plasma and supply the plasma to the processing space (S2), wherein the liner part (300) is formed of a non-metal material to prevent the process gas radicalized through the remote plasma generation part (700) from being extinguished.

Description

Substrate processing device

[0001] The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus that performs pre-cleaning on a substrate.

[0002] Recently, as the linewidth of semiconductor devices decreases, technical improvements are required to enhance the performance and density of semiconductor devices. In particular, capping technology for metal wiring is being developed to compensate for the increase in current density in wiring resulting from the reduction in linewidth.

[0003] By applying capping in this manner, the reliability of electrical conduction is improved through the high conductivity of the capping material, and it can prevent electromigration by acting as a protective layer for metal wiring, as well as effectively prevent degradation and oxidation of various components due to the surrounding environment.

[0004] Such capping can be performed, for example, through cobalt capping using cobalt, and a Chemical Mechanical Polishing (CMP) process can be performed to flatten the surface of the substrate and remove unnecessary layers such as oxide films before the process for cobalt capping.

[0005] However, a native oxide film may form on the substrate between the CMP process and the capping process, and this naturally occurring oxide film reduces electrical contact and increases resistance, thereby degrading the quality of the device.

[0006] To address these issues, conventional substrate processing devices have performed pre-cleaning using hydrogen plasma to pre-treat the natural oxide film formed on the substrate after the CMP process; however, there is a problem in that the process efficiency is relatively low due to the very short lifespan of hydrogen radicals.

[0007] Furthermore, conventional substrate processing devices have a problem in that processing is not performed evenly and smoothly due to asymmetric substrate processing, such as airflow within the processing space shifting in one direction due to the asymmetric formation of exhaust ports within the processing space.

[0008] The objective of the present invention is to provide a substrate processing device with improved substrate cleaning efficiency in order to solve the above-mentioned problems.

[0009] The present invention is created to achieve the purpose of the present invention as described above, and the present invention comprises: a process chamber (100) including a chamber body (110) having an internal space (S1) and an opening (111) formed on the upper side, and an upper lead part (120) installed on the chamber body (110) to cover the opening (111) and introducing process gas from the outside; a support frame (200) that penetrates the center in the vertical direction and is installed in the opening (111); a liner part (300) installed on the inner surface (201) of the support frame (200) to define a processing space (S2) on the inner side and spraying the process gas introduced through the upper lead part (120) into the processing space (S2); and a substrate support part (400) that supports a substrate (1) to be processed on the upper surface and is installed to be movable vertically so that the substrate (1) is positioned within the processing space (S2) during substrate processing. A substrate processing device is disclosed that includes a remote plasma generator (700) provided on the upper lead portion (120) to plasmaize the process gas and supply it to the processing space (S2), and the liner portion (300) is formed of a non-metal to prevent the extinction of the process gas radicalized through the remote plasma generator (700).

[0010] The process chamber (100) may include an exhaust section (130) that is connected to an external exhaust device (500) and is formed asymmetrically with respect to the internal space (S1).

[0011] The exhaust section (130) may include an exhaust groove (131) provided on the inner surface of the chamber body (110) to form an exhaust passage (S3), and an exhaust port (132) formed through the lower surface of the chamber body (110) to communicate with the exhaust groove (131) and connected to the exhaust device (500).

[0012] The above chamber body (110) has a stepped portion (112) formed on the upper inner surface of the opening (111), and the support frame (200) can be installed by being supported on the stepped portion (112).

[0013] The upper surfaces of the chamber body (110), the support frame (200), and the liner part (300) form a single plane and can come into contact with the lower surface of the upper lead part (120).

[0014] The support frame (200) may include a flange portion (210) that is radially extended to be supported by the step portion (112), and an extension portion (220) that is extended downward from the flange portion (210).

[0015] The above chamber body (110) has a gate (119) formed on its side wall for introducing and removing the substrate (1), and the support frame (200) can have its bottom surface in the same plane as the upper inner surface forming the gate (119).

[0016] The support frame (200) may include a liner support part (202) that is formed protruding from the inner surface (201) at the bottom and supports the liner part (300).

[0017] The liner portion (300) and the liner support portion (202) may be formed of different materials.

[0018] The support frame (200) has at least one groove (203) formed on its inner surface, and the liner portion (300) may include a protrusion (301) formed on its outer surface that corresponds to being inserted into the groove (203).

[0019] The above liner portion (300) may include a liner (310) installed on the inner surface (201) of the support frame (200) to form the side of the processing space (S), and a spray plate (320) disposed on the liner (310) to form the upper surface of the processing space (S) and having a plurality of spray nozzles (321) formed thereon.

[0020] The above liner portion (300) may additionally include an upper liner (330) that is supported on the injection plate (320) and forms a diffusion space (S4) for the process gas introduced through the upper lead portion (120) together with the upper surface of the injection plate (320).

[0021] The upper liner (330) can cover at least a portion of the bottom surface of the upper lead portion (120) to prevent metal exposure within the diffusion space (S4).

[0022] The upper liner (330) can have its upper surface coupled to the lower surface of the upper lead part (120).

[0023] The processing space (S2) can be defined as an inner space corresponding to the boundary point between the support frame (200) and the liner (310) from the top of the liner (310).

[0024] The above liner portion (300) may be formed from at least one material among quartz and ceramic.

[0025] The above support frame (200) may include a metal material.

[0026] The above substrate support member (400) can form a gas flow path that is symmetrical in planar shape with the liner member (300) while positioned within the processing space (S2) so that uniform gas discharge from the processing space (S2) is possible.

[0027] The substrate processing device according to the present invention has the advantage of enabling uniform substrate processing by inducing a uniform flow of process gas within the processing space, even with an asymmetric airflow in the internal space due to an asymmetrically formed exhaust port for large-capacity pumping.

[0028] In particular, the substrate processing device according to the present invention has the advantage of being able to uniformly induce the flow of process gas within the processing space by inserting a substrate support and a substrate seated thereon into the processing space to perform substrate processing.

[0029] In addition, the substrate processing device according to the present invention has the advantage of increasing the efficiency of substrate processing by enabling processing with high-density process gas radicals, as the substrate support member is brought into and inserted into a liner member that forms a processing space while process gas is injected, thereby narrowing the distance between the substrate and the injection position where process gas radicals are injected, resulting in a high rate of radicals reaching the substrate before extinction.

[0030] In addition, the substrate processing device according to the present invention has the advantage of enhancing the efficiency and stability of substrate processing by minimizing the extinction of process gas radicals through application that prevents metal exposure within the processing space and exposes the quartz material.

[0031] FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to the present invention.

[0032] FIG. 2 is a cross-sectional view showing the appearance of a substrate support portion within a processing space during substrate processing in a substrate processing apparatus according to FIG. 1.

[0033] FIG. 3 is an exploded perspective view showing the support frame and liner part of the substrate processing apparatus according to FIG. 1.

[0034] The substrate processing apparatus according to the present invention will be described below with reference to the attached drawings.

[0035] A substrate processing apparatus according to the present invention comprises, as illustrated in FIG. 1, a process chamber (100) including a chamber body (110) having an internal space (S1) and an opening (111) formed on the upper side, and an upper lead part (120) installed on the chamber body (110) to cover the opening (111) and introducing process gas from the outside; a support frame (200) having a center that penetrates in the vertical direction and installed in the opening (111); and a liner part (300) installed on the inner surface (201) of the support frame (200) to define a processing space (S2) on the inner side and spraying the process gas introduced through the upper lead part (120) into the processing space (S2). A substrate processing device is disclosed, comprising a substrate support member (400) that supports a substrate (1) to be processed on an upper surface and is installed to be movable up and down so that the substrate (1) is positioned within the processing space (S2) during substrate processing.

[0036] In addition, the substrate processing device according to the present invention may further include an up-and-down driving unit (600) connected to the lower end of a support shaft (420) to drive the substrate support unit (400) in an up-and-down direction, and a remote plasma generating unit (700) provided on an upper lead unit (120) to plasmaize and supply process gas.

[0037] Here, the substrate (1) as the target for processing according to the present invention is configured to perform substrate processing such as deposition, etching, and heat treatment, and any substrate such as a semiconductor manufacturing substrate, an LCD manufacturing substrate, an OLED manufacturing substrate, a solar cell manufacturing substrate, or a transparent glass substrate can be applied.

[0038] In addition, the substrate processing apparatus according to the present invention can be applied to any conventionally disclosed form of substrate processing, such as deposition, etching, heat treatment, and cleaning of a substrate (1), and, for example, a process of pre-cleaning the substrate (1) and removing the generated oxide film can be performed through treatment with a process gas.

[0039] To this end, the process gas described below is a gas supplied for substrate treatment and may be, for example, a gas containing at least one of H, He, Ar, and N, and more specifically, may include hydrogen gas supplied to treat the substrate (1), helium gas as a carrier gas for the hydrogen gas, and argon gas as an ignition gas and purge gas for the remote plasma generation unit (700) described later.

[0040] In addition, the process gas may include water vapor and nitrogen and ammonia (NH3) for treatment as a passivation gas injected according to the process stage.

[0041] The above process chamber (100) may be configured to include a chamber body (110) having an internal space (S1) and an opening (111) formed on the upper side, and an upper lead part (120) installed on the chamber body (110) to cover the opening (111) and to introduce process gas from the outside.

[0042] Additionally, the process chamber (100) may be configured to include an exhaust section (130) that is connected to an external exhaust device (500) and formed asymmetrically with respect to the internal space (S1).

[0043] That is, the process chamber (100) is configured to form various configurations and spaces for processing a substrate (1), and may include a chamber body (110) to form an internal space (S1) and an upper lead part (120) provided on the upper surface of the chamber body (110).

[0044] The above chamber body (110) is configured such that an internal space (S1) and an opening (111) are formed on the upper side, and various configurations are possible.

[0045] For example, the chamber body (110) may be configured in a polygonal or cylindrical shape with an opening (111) formed on the upper side, and may have side walls and a lower surface formed to form an internal space (S1) for processing a substrate (1).

[0046] At this time, the chamber body (110) may have one or more gates (119) formed on the side wall for introducing and removing a substrate (1) into and out of the internal space (S1), and may have an opening (111) formed so as to close the internal space (S1) by installing an upper lead part (120) on the upper side.

[0047] In addition, as shown in FIG. 1, the chamber body (110) has a stepped portion (112) formed on the upper inner surface of the opening (111) so that the support frame (200) described later is supported and installed, and the edge of the support frame (200) is supported on the stepped portion (1112), thereby allowing the support frame (200) described later to be stably installed in the correct position.

[0048] Meanwhile, the chamber body (110) may be formed of a metal material, and may be made of aluminum (Al) considering ease of processing and rigidity.

[0049] The above-mentioned stepped portion (112) is a configuration formed on the side wall of the chamber body (110), and in particular, can be formed on the upper inner surface of the opening (111).

[0050] At this time, the step portion (112) may be formed on the side wall along the inner surface of the opening (111), and may be formed in a shape corresponding to the flange portion (210) described later so that the support frame (200) described later is supported and seated thereon.

[0051] For example, the above-mentioned step portion (112) may be composed of two steps, including a first step portion (112a) and a second step portion (112b) that is extended downwardly inward from the first step portion (112a), and the flange portion (210) of the support frame (200) described later may also be formed in a shape corresponding thereto so as to be seated in a fixed position on the chamber body (110) and simultaneously supported.

[0052] At this time, as shown in FIG. 2, a fastening groove may be formed in the step portion (112) for inserting and fastening a fastening means (90), and accordingly, a fastening means (90) installed through the flange portion (210) of the support frame (200) is fastened, thereby enabling a connection between the support frame (200) and the chamber body (110).

[0053] The upper lead portion (120) is installed on the chamber body (110) to cover the opening (111) and is configured to introduce process gas from the outside, and various configurations are possible.

[0054] That is, the upper lead portion (120) may be configured to be installed on the upper side of the chamber body (110) to cover the opening (111), and to transmit process gas received through a remote plasma generating portion (700) that is positioned on the upper surface and communicates with the liner portion (300).

[0055] For example, the upper lead portion (120) may include an upper lead (121) installed on the upper side of the chamber body (110) to cover the opening (111), and a gas introduction portion (122) installed through the center of the upper lead (121) and communicating with a remote plasma generating portion (700) to introduce process gas.

[0056] At this time, the upper lead (121) may have a through-hole formed in the center, and a gas introduction part (122) is installed in the through-hole formed, and the upper end of the gas introduction part (122) is connected to a remote plasma generation part (700), so that the process gas supplied through the remote plasma generation part (700) can be supplied to the processing space (S2) through the liner part (300).

[0057] Meanwhile, in this case, the inner surface of the gas introduction part (122) forming a flow path can be formed of quartz to effectively deliver the gas to the liner part (300) while preventing the disappearance of hydrogen gas in the form of radicals.

[0058] The exhaust section (130) is connected to an external exhaust device (500) and is configured to be asymmetrically formed with respect to the internal space (S1), and various configurations are possible.

[0059] That is, the exhaust section (130) can form a relatively large-diameter exhaust passage (S3) that allows exhaust through an external exhaust device (500) composed of a high-vacuum turbo pump to form a high-vacuum processing space (S2) due to process characteristics.

[0060] Additionally, the exhaust section (130) may be formed asymmetrically with respect to the internal space (S1) due to the limited installation area around the process chamber (100) of the exhaust device (500), which is a high-vacuum turbopump.

[0061] For example, the exhaust section (130) may include an exhaust groove (131) provided on the inner surface of the chamber body (110) to form an exhaust passage (S3), and an exhaust port (132) formed through the lower surface of the chamber body (110) to communicate with the exhaust groove (131) and connected to an exhaust device (500).

[0062] That is, the exhaust section (130) may include an exhaust groove (131) provided on the inner surface of the chamber body (110) so as to form an exhaust passage (S3) as shown in FIG. 1 and be formed on one side from the center of the plane as asymmetrically with respect to the internal space (S1).

[0063] Accordingly, the exhaust groove (131) may be formed as a groove in the side wall of the chamber body (110) to form part of the exhaust passage (S3), and an exhaust port (132) that is formed through the lower surface of the chamber body (110) and connected to the exhaust device (500) may be formed extending from the exhaust groove (131).

[0064] Meanwhile, the exhaust unit (130) may be formed as a turbo pump to allow asymmetric pumping to occur with respect to the exhaust device (500) installed in a limited area outside the process chamber (100) and the internal space (S1), but by inserting the substrate support unit (400) into the processing space (S2) formed through the liner unit (300) described later to perform substrate processing, it is possible to minimize the influence of the airflow in the exhausted internal space (S1) and induce the formation of a uniform airflow within the processing space (S2), while also enabling high-speed pumping and the realization of a high-vacuum environment.

[0065] That is, when the substrate support member (400) described later is raised and positioned within the processing space (S2), a gas passage is formed that allows gas to be discharged from the processing space (S2) by maintaining an equal spacing along the circumferential direction between it and the inner surface of the liner member (300). At this time, the gas passage can be formed to be symmetrical in a planar shape so that uniform gas discharge from the processing space (S2) is possible despite the asymmetrical installation of the exhaust member (130).

[0066] That is, the above gas passage is formed at equal intervals along the circumferential direction between the outer surface of the substrate support (400) and the inner surface of the liner (300), and is formed symmetrically with respect to the center of the plane of the substrate support (400), so that a uniform airflow can be formed within the processing space (S2) despite the exhaust section (130) being installed asymmetrically.

[0067] The above support frame (200) is configured such that its center penetrates in the vertical direction and is installed in the opening (111), and various configurations are possible.

[0068] At this time, the support frame (200) is installed as the bottom surface of the upper lead part (120) installed to cover the opening (111), and is configured to be installed in the opening (111), and can be supported and installed on the stepped part (112) of the chamber body (110) as described above.

[0069] For example, the support frame (200) may include a flange portion (210) that is radially extended to be supported on the step portion (112), and an extension portion (220) that is extended downward from the flange portion (210).

[0070] The above flange portion (210) may be configured to be radially extended at the top and supported by the stepped portion (112) of the chamber body (110) described above, and may be configured to be coupled to the chamber body (110) as the fastening means (90) passes through and is fastened to the chamber body (110).

[0071] At this time, the flange portion (210) may be composed of two steps, with the supporting surface of the bottom surface that is in contact with the first step portion (112a) and the second step portion (112b), and may be inserted into and supported on the inner surface of the chamber body (110) that forms the opening (111).

[0072] The above extension portion (220) is configured to extend downward from the flange portion (210), and forms an inner surface (201) that is formed with the center penetrating together with the flange portion (210), and can extend downward to at least a part of the inner surface of the chamber body (110).

[0073] At this time, the extension part (220) can be extended to a position where the lower surface forms the same plane as the upper inner surface that forms the gate (119) formed on the side wall of the chamber body (110), and accordingly, the area of ​​the processing space (S2) defined through the liner part (300) described later can be set.

[0074] Additionally, the support frame (200) may have a liner support part (202) formed at the bottom that protrudes from the inner surface (201) and supports the liner part (300) described later. In this case, the liner support part (202) may be configured to support the liner part (300) installed on the inner surface (201) by being formed to protrude from the bottom of the extension part (220) to the inner surface (201), as shown in FIG. 2.

[0075] At this time, the inner surface of the liner support member (202) and the inner surface of the liner (310) of the liner member (300) described later, which is supported and installed on the liner support member (202), can form the same plane, and accordingly, by maintaining the same spacing as the side wall of the substrate support member (400) inserted and arranged into the processing space (S2), the generation of vortices in the airflow flowing from the processing space (S2) to the lower internal space (S1) can be minimized and a uniform airflow can be formed.

[0076] Additionally, the support frame (200) may be formed of a metal material considering the support stability, ease of processing, and rigidity for the installed liner part (300), and accordingly, the liner support part (202) may be formed of a metal and may be applied with a different material from the liner part (300) that supports it.

[0077] Additionally, the support frame (200) may have at least one groove (203) formed on its inner surface as shown in FIG. 3, and more specifically, at least one groove (203) having a length in the vertical direction may be formed, for example, in a pair with a gap between them along the inner surface.

[0078] At this time, the groove (203) formed on the inner surface of the support frame (200) is formed up to the upper surface so that the upper end is open and can be exposed to the upper surface of the flange portion (210), and can be omitted from the lower liner support portion (202) so that the lower end is closed, thereby preventing insertion and installation of the installed liner portion (300) in the correct position and rotation in the installed state according to the annular structure, and can be supported by the liner support portion (202).

[0079] The above liner portion (300) may be configured to be installed on the inner surface (201) of the support frame (200) to define a processing space (S2) on the inner side and to inject process gas introduced through the upper lead portion (120) into the processing space (S2).

[0080] That is, the liner part (300) may be configured to be installed on the inner surface (201) of the support frame (200) to form a processing space (S2) and to inject process gas introduced through communication with the gas introduction part (122) into the processing space (S2).

[0081] Furthermore, the liner portion (300) is formed of a quartz material to prevent metal exposure within the processing space (S2), thereby preventing the hydrogen gas in a radical state from being extinguished by a reaction caused by metal exposure and inducing the hydrogen radical to reach the substrate (1).

[0082] For example, the liner portion (300) may include a liner (310) installed on the inner surface (201) of a support frame (200) to form a side of a processing space (S), and a spray plate (320) disposed on the liner (310) to form an upper surface of the processing space (S) and having a plurality of spray nozzles (321) formed thereon.

[0083] Additionally, the liner portion (300) may further include an upper liner (330) that is supported on the injection plate (320) and forms a diffusion space (S4) for the process gas introduced through the upper lead portion (120) together with the upper surface of the injection plate (320).

[0084] The above liner (310) is configured to be installed on the inner surface (201) of the support frame (200) to form the side of the processing space (S), and can be applied in a shape corresponding to the inner surface of the support frame (200).

[0085] For example, the liner (310) may be formed with a through hole in the center and may be composed of an annular quartz material corresponding to a cylindrical support frame (200), and as another example, may be composed of an angular quartz material corresponding to an angular support frame (200).

[0086] Meanwhile, the above-mentioned liner (310) is applied at a height lower than the inner surface (201) of the support frame (200) and is directly seated and supported on the liner support part (202), and its thickness corresponds to that of the liner support part (202), so that its inner surface forms the same plane as the inner surface of the liner support part (202).

[0087] The above injection plate (320) is configured to be placed on a liner (310) to form the upper surface of a processing space (S) and to have a plurality of injection ports (321) formed thereon, and various configurations are possible.

[0088] That is, the above injection plate (320) may be a plate made of quartz material, formed with a plurality of injection ports (321) penetrating from top to bottom, and configured to diffuse and inject process gas introduced and delivered through the upper gas introduction part (122) into the processing space (S2).

[0089] At this time, the injection plate (320) can form the upper surface of the processing space (S2) and simultaneously properly diffuse and inject process gas through the injection port (321).

[0090] The upper liner (330) may be configured to be supported on the injection plate (320) and to form a diffusion space (S4) for the process gas introduced through the upper lead portion (120) together with the upper surface of the injection plate (320).

[0091] That is, the upper liner (330) may have a structure with an open lower side so as to be supported on the injection plate (320) as shown in FIG. 2, and a through hole of a size corresponding to the gas introduction part (122) is formed on the upper surface so as to be able to deliver process gas introduced through the gas introduction part (122) to the injection plate (320).

[0092] At this time, the upper liner (330) can form a diffusion space (S4) that diffuses the process gas introduced through the gas introduction part (122) together with the upper surface of the injection plate (320), and can be made of a quartz material to prevent the reaction and extinction of the process gas in a radical state remaining in the diffusion space (S4) and can be exposed as a quartz material on its inner surface.

[0093] In particular, the upper liner (330) may be configured to cover at least a portion of the bottom surface of the upper lead (120), that is, the bottom surface of the upper lead (121), in order to prevent exposure to the diffusion space (S4) of the inner surface (201) of the upper lead (121) made of metal material and the support frame (200) made of metal material provided on the upper side.

[0094] Furthermore, the upper liner (330) can be fixed while supported on the injection plate (320) so that its upper surface is coupled to the lower surface of the upper lead part (120), more specifically, to the lower surface of the upper lead (121).

[0095] Meanwhile, in this case, the chamber body (110), the support frame (200), and the liner part (300) have upper surfaces that form a single plane and can come into contact with the lower surface of the upper lead part (120).

[0096] Thus, the upper liner (330) can form the side and upper surfaces of the diffusion space (S4), the upper surface of the injection plate (320) can form the lower surface of the diffusion space (S4), and the diffused process gas can be guided to be delivered to the lower processing space (S2) through the injection port (321).

[0097] At this time, the processing space (S2) may be formed as a space with the aforementioned liner (310) as the side and the bottom surface of the injection plate (320) as the top surface, and in particular, it may be defined as an inner space corresponding to the boundary point between the support frame (200) and the liner (310) from the top of the liner (310).

[0098] Accordingly, the substrate support member (400) described below can be inserted such that at least a portion of it is located within the processing space (S2) when processing the substrate (1) placed on the upper surface, and can move in the up and down direction within the processing space (S2).

[0099] Meanwhile, the liner portion (300) may include a protrusion (301) formed on the outer surface to be inserted into the groove (203), corresponding to the groove (203) formed on the inner surface (201) of the support frame (200), as shown in FIG. 3.

[0100] At this time, the protrusion (301) may be formed on the outer surface of each of the liner (310), the injection plate (320), and the upper liner (330), and may include a first protrusion (301a) protruding in a shape corresponding to the groove (203) on the outer surface of the upper liner (330), a second protrusion (301b) protruding in a shape corresponding to the groove (203) on the outer surface of the injection plate (320), and a third protrusion (301c) protruding in a shape corresponding to the groove (203) on the outer surface of the liner (310).

[0101] Additionally, the first protrusion (301a), the second protrusion (301b), and the third protrusion (301c) have corresponding through holes formed therein and can be fastened together through a separate fastening member (not shown).

[0102] The above substrate support member (400) supports a substrate (1) to be processed on an upper surface and is configured to be movable up and down so that the substrate (1) is positioned within the processing space (S2) during substrate processing, and various configurations are possible.

[0103] At this time, the substrate support member (400) may be equipped with a lift pin (not shown) for supporting the substrate (1) when loading or unloading the substrate (1).

[0104] For example, the substrate support member (400) may include a support plate (410) that supports the substrate (1) on an upper surface, and a support shaft (420) that is installed by penetrating the process chamber (100) downward from the support plate (410).

[0105] The above support plate (410) is configured to be installed on the lower side of the liner portion (300) and on which the substrate (1) is placed, and any configuration for supporting the substrate is possible.

[0106] At this time, the support plate (410) may be installed to be able to move up and down through the up and down driving unit (600) described later for introducing and discharging the substrate (1) through the gate (119), as shown in FIG. 1, and furthermore, a temperature control member such as a heater may be installed for temperature control, such as heating or cooling the substrate (1).

[0107] The above support shaft (420) may be configured such that one end penetrates the lower surface of the process chamber (100) to support the lower surface of the support plate (410), and the other end is connected to the upper and lower drive unit (600) to move in the upper and lower direction.

[0108] That is, the support shaft (420) is connected to an up-and-down drive unit (600) to position the substrate (1) introduced and removed through the gate (119) at an appropriate height, and furthermore, to move in an up-and-down direction so that the substrate support part (400) is inserted into the processing space (S2), and accordingly, power generated through the up-and-down drive unit (600) can be transmitted to the support plate (410).

[0109] The above-described vertical drive unit (600) is configured to move the substrate support unit (400) in the vertical direction, and various configurations are possible.

[0110] At this time, the upper and lower drive unit (600) may be configured to be connected to the lower end of the support shaft (420) as shown in FIG. 1 and to move the support shaft (420) up and down, and a separate bellows may be installed to prevent gas leakage from the internal space (S1) through the support shaft (420) penetrating the lower surface of the process chamber (100).

[0111] For example, the above-described vertical drive unit (600) may be applied as a combination of a motor and a gear to move the support shaft (420) up and down, and as another example, any configuration that generates power, such as a cylinder, an electromagnetic motor, or a cam drive, may be applied.

[0112] Meanwhile, the substrate support member (400) moves in the up and down direction through the aforementioned up and down driving member (600), so that at least a portion of the support plate (410) may be positioned within the processing space (S2) when processing the substrate, and accordingly, the substrate (1) may be positioned within the processing space (S2).

[0113] In addition, the substrate support member (400) can maintain an appropriate process gap for substrate processing by moving up and down within the processing space (S2) during substrate processing.

[0114] The above remote plasma generator (700) may be configured to be provided on the upper lead part (120) to plasmaize and supply process gas.

[0115] In particular, the remote plasma generator (700) is connected to the gas introduction unit (122) and can deliver process gas, specifically, process gas in a radical state through plasma.

[0116] That is, the remote plasma generation unit (700) can be configured to supply process gas of hydrogen radicals to the processing space (S2), and can form a supply path to supply not only process gas but also the various gases described above to the processing space (S2).

[0117]

[0118] The foregoing merely describes some preferred embodiments that can be implemented by the present invention. As is well known, the scope of the present invention should not be interpreted as being limited to the above embodiments, and all technical concepts that share the fundamental principles with the technical concept of the present invention described above shall be considered to be included within the scope of the present invention.

Claims

1. A process chamber (100) comprising a chamber body (110) having an internal space (S1) and an opening (111) formed on the upper side, and an upper lead part (120) installed on the chamber body (110) to cover the opening (111) and introducing process gas from the outside; A support frame (200) that is installed in the opening (111) and has a center that penetrates in the vertical direction; A liner part (300) installed on the inner surface (201) of the support frame (200) to define a processing space (S2) on the inner side and spraying process gas introduced through the upper lead part (120) into the processing space (S2); A substrate support member (400) that supports a substrate (1) to be processed on an upper surface and is installed to be movable up and down so that the substrate (1) is positioned within the processing space (S2) during substrate processing; It includes a remote plasma generator (700) provided on the upper lead part (120) to plasmaize the process gas and supply it to the processing space (S2), and The above liner part (300) is, A substrate processing device characterized by being formed of a non-metal to prevent the extinction of radicalized process gas through the above remote plasma generation unit (700).

2. In Claim 1, The above process chamber (100) is, A substrate processing device characterized by including an exhaust section (130) that is connected to an external exhaust device (500) and formed asymmetrically with respect to the internal space (S1).

3. In Claim 2, The above exhaust section (130) is, A substrate processing device characterized by including an exhaust groove (131) provided on the inner surface of the chamber body (110) to form an exhaust passage (S3), and an exhaust port (132) formed through the lower surface of the chamber body (110) to communicate with the exhaust groove (131) and connected to the exhaust device (500).

4. In Claim 1, The above chamber body (110) is, A stepped portion (112) is formed on the upper inner surface of the above opening (111), and The above support frame (200) is, A substrate processing device characterized by being supported and installed on the above-mentioned step portion (112).

5. In Claim 4, A substrate processing device characterized in that the chamber body (110), the support frame (200), and the liner part (300) have upper surfaces that form a single plane and contact the lower surface of the upper lead part (120).

6. In Claim 4, The above support frame (200) is, A substrate processing device characterized by including a flange portion (210) that is radially extended to be supported by the step portion (112), and an extension portion (220) that is extended downward from the flange portion (210).

7. In Claim 1, The above chamber body (110) is, A gate (119) is formed on the side wall for introducing and removing the substrate (1), and The above support frame (200) is, A substrate processing device characterized in that the bottom surface forms the same plane as the upper inner surface forming the gate (119).

8. In Claim 1, The above support frame (200) is, A substrate processing device characterized by including a liner support portion (202) formed protruding from the inner surface (201) at the bottom and supporting the liner portion (300).

9. In Claim 1, The above support frame (200) is, At least one groove (203) is formed on the inner surface, and The above liner part (300) is, A substrate processing device characterized by including a protrusion (301) formed on the outer surface that corresponds to being inserted into the groove (203).

10. In Claim 1, The above liner part (300) is, A substrate processing device characterized by including a liner (310) installed on the inner surface (201) of the support frame (200) to form the side of the processing space (S), and a spray plate (320) disposed on the liner (310) to form the upper surface of the processing space (S) and having a plurality of spray nozzles (321) formed thereon.

11. In Claim 10, The above liner part (300) is, A substrate processing apparatus further comprising an upper liner (330) that is supported on the injection plate (320) and forms a diffusion space (S4) for the process gas introduced through the upper lead portion (120) together with the upper surface of the injection plate (320).

12. In Claim 11, The upper liner (330) above is, A substrate processing device characterized by covering at least a portion of the bottom surface of the upper lead portion (120) to prevent metal exposure within the diffusion space (S4).

13. In Claim 11, The upper liner (330) above is, A substrate processing device characterized by the upper surface being coupled to the lower surface of the upper lead part (120).

14. In Claim 1, The above liner part (300) is, A substrate processing apparatus characterized by being formed from at least one material among quartz and ceramic.

15. In Claim 14, The above support frame (200) is, A substrate processing device characterized by including a metal material.

16. In Claim 1, The above substrate support (400) is, A substrate processing device characterized by forming a gas flow path that is symmetrical in planar shape with the liner part (300) while located within the processing space (S2) so as to enable uniform gas discharge from the processing space (S2).

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