Substrate processing device

Abstract

The present invention relates to a substrate processing device and, more specifically, to a substrate processing device for processing a substrate by using plasma. The present invention provides a substrate processing device comprising: a process chamber (100) forming a processing space (S) therein; a waveguide (200) installed through the upper surface of the process chamber (100) and introducing process gas from the outside; a remote plasma generation part (500) communicating with the waveguide (200) on the upper side of the waveguide (200) and supplying radicalized process gas through remote plasma; and a support part (600) installed to surround the waveguide (200) on the upper surface of the process chamber (100) and supporting the remote plasma generation part (500), wherein the waveguide (200) is installed such that the upper end thereof is located at a position higher than the upper surface of the support part (600) in order to prevent the process gas transmitted through the remote plasma generation part (500) from being extinguished.

Description

Substrate processing device

[0001] The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus that performs processing on a substrate using plasma.

[0002] Recently, as the linewidth of semiconductor devices decreases, technical improvements are required to enhance the performance and density of semiconductor devices. In particular, capping technology for metal wiring is being developed to compensate for the increase in current density in wiring resulting from the reduction in linewidth.

[0003] By applying capping in this manner, the reliability of electrical conduction is improved through the high conductivity of the capping material, and it can prevent electromigration by acting as a protective layer for metal wiring, as well as effectively prevent degradation and oxidation of various components due to the surrounding environment.

[0004] Such capping can be performed, for example, through cobalt capping using cobalt, and a Chemical Mechanical Polishing (CMP) process can be performed to flatten the surface of the substrate and remove unnecessary layers such as oxide films before the process for cobalt capping.

[0005] However, a native oxide film may form on the substrate between the CMP process and the capping process, and this naturally occurring oxide film reduces electrical contact and increases resistance, thereby degrading the quality of the device.

[0006] To address these issues, conventional substrate processing devices performed plasma-based pre-cleaning to pre-treat the natural oxide film formed on the substrate after the CMP process, and for this purpose, waveguides were applied to deliver hydrogen radicals.

[0007] However, in the case of conventional substrate processing devices, since metal waveguides with excellent reactivity with radicals are applied, the radicals are extinguished due to the reaction between the radicals and the waveguide, preventing them from passing through the waveguide to the processing space within the chamber and resulting in a short lifespan.

[0008] Accordingly, conventional substrate processing devices have applied non-metallic waveguides to prevent the extinction of radicals within the waveguide and extend their lifespan to deliver them to the processing space; however, this results in high brittleness and low rigidity, leading to a problem where damage occurs during the installation of the relatively heavy remote plasma device (RPG) connected to the top.

[0009] In addition, conventional substrate processing devices prevented contact between the waveguide and the remote plasma device (RPG) and subsequent damage by sufficiently separating the gap between the waveguide and the remote plasma device; however, there is a problem in that surrounding metal is exposed in the gap between the waveguide and the remote plasma device, causing radicals to dissipate.

[0010] The objective of the present invention is to provide a substrate processing device capable of preventing the extinction of radicals in order to solve the above-mentioned problems.

[0011] The present invention is created to achieve the purpose of the present invention as described above, and the present invention discloses a substrate processing device comprising: a process chamber (100) forming a processing space (S) inside; a waveguide (200) installed through the upper surface of the process chamber (100) and introducing process gas from the outside; a remote plasma generator (500) communicating with the waveguide (200) on the upper side of the waveguide (200) and supplying process gas radicalized through remote plasma; and a support member (600) installed surrounding the waveguide (200) on the upper surface of the process chamber (100) and supporting the remote plasma generator (500), wherein the waveguide (200) is installed such that its upper end is positioned higher than the upper surface of the support member (600) in order to prevent the process gas transmitted through the remote plasma generator (500) from being lost.

[0012] The waveguide (200) is formed of quartz, ceramic, or a combination thereof, and the support (600) can be formed of a metal material.

[0013] The above support member (600) can be installed such that its inner surface is spaced apart from the outer surface of the waveguide (200).

[0014] The support member (600) may include a body member (610) that is installed around the waveguide (200) on the upper surface of the process chamber (100) and has an upper flange (611) formed that extends radially at the top, and a fastening bolt (620) that passes through the upper flange (611) and is fastened to a fastening groove (503) formed on the bottom surface of the remote plasma generating member (500) to connect the body member (610) and the remote plasma generating member (500).

[0015] The above support member (600) may include a lower sealing member (630) provided between the upper surface of the process chamber (100).

[0016] The above support member (600) may have a refrigerant passage (601) formed therein so that a refrigerant for cooling circulates inside.

[0017] The remote plasma generator (500) may include a transmission channel (502) that transmits the process gas to the waveguide (200) and has a diameter smaller than the inner diameter of the waveguide (200).

[0018] It may additionally include a sealing part (700) that surrounds the upper part of the waveguide (200), is installed between the support part (600) and the remote plasma generation part (500) to form a gap (D) between the support part (600) and the remote plasma generation part (500), and seals the gap (D).

[0019] The sealing portion (700) can be installed such that its inner surface is spaced apart from the outer surface of the waveguide (200).

[0020] The sealing part (700) may be installed such that its upper end is positioned higher than the upper end of the waveguide (200) to prevent the upper end of the waveguide (200) from coming into contact with the remote plasma generating part (500).

[0021] The sealing portion (700) may include a sealing frame (710) installed to surround the upper end of the waveguide (200) which protrudes upward above the upper surface of the support portion (600) between the support portion (600) and the remote plasma generating portion (500), and a sealing member (720) provided on the outer surface of the sealing frame (710) to seal the gap (D).

[0022] The sealing frame (710) can be formed of a metal material.

[0023] It may additionally include a support frame part (800) installed on the upper surface of the process chamber (100) to support the remote plasma generator (500) spaced apart from the upper surface of the process chamber (100).

[0024] The support frame portion (800) may include a support plate (810) that supports the remote plasma generator (500) on its upper surface and has a communication hole (801) formed in the center for the support portion (600) to be connected to the remote plasma generator (500), and a support shaft portion (820) that supports the support plate (810) with one end connected to the support plate (810) and the other end connected to the upper surface of the process chamber (100).

[0025] The support plate (810) may include a plate (811) that supports the remote plasma generator (500), and a protruding fastening part (812) that is formed protruding from the side of the plate (811) and coupled with the support shaft part (820) so that the remote plasma generator (500) supported by the plate (811) is installed in a fixed position relative to the waveguide (200).

[0026] The support shaft portion (820) may include a support shaft (821) installed through the support plate (810), and a nut portion (822) bolted to the support shaft (821) to support the support plate (810) and adjust the height of the support plate (810) through rotation.

[0027] The substrate processing device according to the present invention has the advantage of minimizing the gap between the waveguide and the remote plasma generator to minimize the extinction of transmitted radicals due to metal exposure and to smoothly transmit radicals to the processing space.

[0028] In particular, the substrate processing device according to the present invention has the advantage of preventing contamination of the support and increasing the lifespan of the radicals by preventing metal exposure of the transmitted radicals and arranging the non-metal waveguide protruding upward from the metal support that fixes the remote plasma generator.

[0029] In addition, the substrate processing device according to the present invention has the advantage of preventing damage to the waveguide by preventing contact between the waveguide and the remote plasma generator while installing the device with a minimized gap between the waveguide and the remote plasma generator.

[0030] FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to the present invention.

[0031] FIG. 2 is an enlarged cross-sectional view showing the waveguide support of the waveguide support part of the substrate processing apparatus according to FIG. 1.

[0032] FIG. 3 is an exploded perspective view showing the appearance of the gas injection section of the substrate processing device according to FIG. 1.

[0033] FIGS. 4a to 4c are drawings showing the waveguide replacement process in the substrate processing apparatus according to FIG. 1.

[0034] FIG. 5 is a cross-sectional view showing the installation relationship between the support part, the remote plasma generation part, and the waveguide in the substrate processing device according to FIG. 1.

[0035] FIG. 6 is an enlarged cross-sectional view showing the communication relationship between a remote plasma generator and a waveguide in a substrate processing device according to FIG. 5.

[0036] FIG. 7 is a perspective view showing the installation of the support shaft portion of the support frame portion of the substrate processing device according to FIG. 5.

[0037] The substrate processing apparatus according to the present invention will be described below with reference to the attached drawings.

[0038] A substrate processing device according to the present invention comprises, as shown in FIG. 1, a process chamber (100) including a chamber body (110) having an opening (111) formed on the upper side, and an upper lead part (120) installed in the opening (111) to form a processing space (S) sealed with the chamber body (110) and having a through hole (121); a waveguide (200) installed through the through hole (121) to introduce process gas from the outside; and a waveguide support part (300) coupled to the upper lead part (120) and installed in the through hole (121) to support the waveguide (200).

[0039] Additionally, the substrate processing device according to the present invention may include a gas injection unit (400) installed at the lower part of the upper lead part (120) to inject process gas introduced through a waveguide (200) into a processing space (S), and a remote plasma generation unit (500) installed at the upper side of the upper lead part (120) to communicate with the waveguide (200) to supply radicalized process gas through the waveguide (200).

[0040] Here, the substrate (1) as the target for processing according to the present invention is configured to perform substrate processing such as deposition, etching, and heat treatment, and any substrate such as a semiconductor manufacturing substrate, an LCD manufacturing substrate, an OLED manufacturing substrate, a solar cell manufacturing substrate, or a transparent glass substrate can be applied.

[0041] In addition, the substrate processing apparatus according to the present invention can be applied to any conventionally disclosed form of substrate processing, such as deposition, etching, heat treatment, and cleaning of a substrate (1), and, for example, a process of pre-cleaning the substrate (1) and removing the generated oxide film can be performed through treatment with a process gas.

[0042] To this end, the process gas described below is a gas supplied for substrate treatment and may be, for example, a gas containing at least one of H, He, Ar, and N, and more specifically, may include hydrogen gas supplied to treat the substrate (1), helium gas as a carrier gas for the hydrogen gas, and argon gas as an ignition gas and purge gas for the remote plasma generator (500) described later.

[0043] In addition, the process gas may include water vapor and nitrogen and ammonia (NH3) for treatment as a passivation gas injected according to the process stage.

[0044] The above process chamber (100) can be configured in various ways to form a processing space (S).

[0045] For example, the process chamber (100) may include a chamber body (110) having an opening (111) formed on the upper side, and an upper lead part (120) installed at the opening (111) to form a processing space (S) inside the chamber body (110) and having a through hole (121) that penetrates in the vertical direction.

[0046] The above chamber body (110) is configured such that an opening (111) is formed on the upper side, and various configurations are possible.

[0047] For example, the chamber body (110) may be configured in a polygonal or cylindrical shape with an opening (111) formed on the upper side, and may have side walls and a lower surface formed to form a processing space (S) for processing a substrate (1) together with an upper lead part (120).

[0048] At this time, the chamber body (110) may have one or more gates (119) formed on the side wall for introducing and removing a substrate (1) into and out of the processing space (S), and an opening (111) may be formed on the upper side so as to close the processing space (S) by installing an upper lead part (120).

[0049] In addition, the chamber body (110) may have a stepped portion formed on its upper inner surface so that a gas injection portion (400), described later, is supported and installed in the opening (111) as shown in FIG. 1.

[0050] Meanwhile, the chamber body (110) may be formed of a metal material, and may be made of aluminum (Al) considering ease of processing and rigidity.

[0051] Additionally, the chamber body (110) may be formed with an exhaust port (112) connected to an external exhaust device (10) to perform exhaust for the processing space (S). At this time, the exhaust port (112) may be formed with a relatively large diameter that allows exhaust through the external exhaust device (10), which is composed of a high-vacuum turbo pump, so as to form a high-vacuum processing space (S) due to process characteristics.

[0052] Additionally, the exhaust port (112) may be formed asymmetrically with respect to the processing space (S) due to the limited installation area around the process chamber (100) of the exhaust device (10), which is a high-vacuum turbopump.

[0053] The upper lead portion (120) is configured to be installed in the opening (111) to form a processing space (S) inside the chamber body (110) and to have a through hole (121), and various configurations are possible.

[0054] That is, the upper lead part (120) may be installed on the upper side of the chamber body (110) to cover the opening (111), and may be configured to have a waveguide (200) and a remote plasma generator (500) to be installed to transfer process gas to the processing space (S).

[0055] At this time, the upper lead part (120) has a through hole (121) formed in the center through which a waveguide (200) is installed to pass through, thereby allowing the process gas supplied from the remote plasma generator (500) to be delivered to the processing space (S) through the gas injection part (400) described later.

[0056] The above through hole (121) is formed to penetrate vertically through the center of the upper lead part (120), so that the waveguide (200) is positioned at the center of the plane of the upper lead part (120), thereby enabling uniform injection of process gas.

[0057] Meanwhile, the upper lead part (120) may be made of a metal material that is rigid and easy to process, such as the chamber body (110), and may be composed of, for example, aluminum (Al).

[0058] Meanwhile, the upper lead portion (120) may include an insertion groove (122) formed by extending radially from the end of the through hole (121) on the bottom surface, into which a waveguide support portion (300) is inserted and installed.

[0059] That is, the upper lead portion (120) may be formed by extending radially from the end of the through hole (121) to form an insertion groove (122) to have a step, and an annular waveguide support portion (300) may be inserted into the insertion groove (122) to support the waveguide (200).

[0060] At this time, the insertion groove (122) can be formed at a predetermined depth on the bottom surface of the upper lead portion (120), and, for example, can be formed at a depth corresponding to the side wall of the waveguide support portion (300) so that the bottom surface of the waveguide support portion (300) and the upper lead portion (120) form the same plane.

[0061] Meanwhile, the upper lead portion (120) may be installed so as to be hinge-rotatably connected to the chamber body (110) to open the opening (111).

[0062] More specifically, the upper lead portion (120) is hinge-coupled to the chamber body (110) through a hinge portion (20) on a preset side that is coupled to the chamber body (110), and can be hinge-rotated relative to the chamber body (110) by rotating about the horizontal hinge axis of the hinge portion (20).

[0063] Thus, by opening the opening (111) of the chamber body (110), the interior can be exposed, and access for maintenance of various components within the chamber body (110) can be made possible.

[0064] In this case, the upper lead part (120) can hinge rotate integrally with the remote plasma generator (500) and the waveguide (200) without uncoupling or separation of the remote plasma generator (500) and the waveguide (200) installed on the upper lead part (120).

[0065] The above waveguide (200) is installed by passing through the through hole (121) and is connected to a gas supply source to introduce process gas from the gas supply source, and various configurations are possible.

[0066] That is, the above waveguide (200) may be configured to supply process gas to the processing space (S) by communicating with a gas supply source that is externally provided to supply process gas and includes a remote plasma generator (500) described later.

[0067] At this time, the gas supply source may be configured to include a remote plasma generator (500) and a supply source separately provided externally to temporarily store process gas and deliver gas to the remote plasma generator (500). The supply source may be configured to store and deliver process gas in a gaseous state, or may include a configuration such as a vaporizer for vaporizing and supplying raw materials in a liquid or solid state as needed.

[0068] At this time, the waveguide (200) is installed by passing through the through hole (121), and more specifically, it can be installed by being supported through the waveguide support member (300) while its end is passing through the through hole (121).

[0069] Meanwhile, the above waveguide (200) may be formed of a quartz or ceramic material so that radicals do not react inside and are transmitted to the substrate (1) in the processing space (S). Accordingly, since there is a risk of damage when in contact with the upper lead part (120) of the metal, it is essential to install it in the correct position within the through hole (121).

[0070] To this end, the waveguide (200) may have a supporting surface supported by a waveguide support member (300) formed in a tapered shape, and more specifically, at least a portion of the end may be formed in a tapered shape and supported in a fixed position through the waveguide support member (300).

[0071] For example, the waveguide (200) may include a tube section (210) in which a flow path is formed to deliver process gas received from a remote plasma generator (500) inside, and an expansion section (220) formed by expanding the outer diameter radially at the end of the upper lead section (120) of the tube section (210).

[0072] At this time, the extension portion (220) may be applied in the form of a flange so as to be supported by the waveguide support portion (300) described later, with an outer diameter corresponding to the through hole (121).

[0073] In addition, the extension portion (220) may be supported by being aligned in a fixed position on the waveguide support portion (300) by forming a tapered waveguide inclined surface (201) and an extension surface (202) as described later.

[0074] For example, as shown in FIG. 2, the above waveguide (200) may have a waveguide inclined surface (201) on at least a part of its outer surface that becomes smaller in diameter as it goes downward, and an extended surface (202) that extends vertically downward from the waveguide inclined surface (201) on its outer surface.

[0075] At this time, the waveguide inclined surface (201) can be supported in a fixed position on a waveguide support member (300) that includes a support inclined surface (301) with an inner surface that is inclined, such that the outer diameter of at least a part of the outer surface becomes smaller as it goes downwards to have a tapered shape.

[0076] Additionally, the above extension surface (202) is a surface that is additionally vertically extended downward from the outer surface of the waveguide inclined surface (201), and can be formed corresponding to the vertical extension surface (302) formed downward from the support inclined surface (301) on the inner surface of the waveguide support part (300).

[0077] Thus, the extension surface (202) can be inserted into and aligned with the vertical extension surface (302) which is formed to extend vertically from the support inclined surface (301) on the inner surface of the waveguide support part (300) to the end.

[0078] Additionally, the waveguide (200) may include a stepped surface (203) formed with a step at the end of the extended surface (202), and the stepped surface (203) may be formed by extending further downward relative to the bottom surface of the waveguide support member (300) and protruding downward from the waveguide support member (300).

[0079] Thus, the above-mentioned step surface (203) can be installed by inserting the upper liner (440) described later, as shown in FIG. 2, so that the waveguide support part (300) is covered through the upper liner (440), thereby preventing exposure of the waveguide support part (300) and inducing the end of the waveguide (200) and the upper liner (440) to form the same plane.

[0080] The above waveguide support member (300) is configured to be coupled to the upper lead member (120) and installed in the through hole (121) to support the waveguide (200), and various configurations are possible.

[0081] At this time, the waveguide support member (300) can be installed on the side opposite to the remote plasma generator (500) of the upper lead member (120) to support the waveguide (200), so that the upper lead member (120) can be hinged to the chamber body (110) without releasing the remote plasma generator (500).

[0082] That is, when it is necessary to separate the waveguide (200) for maintenance or replacement of the conventional waveguide (200), the remote plasma generator (500) installed on the upper side of the waveguide (200) must be released from the upper lead part (120) and the waveguide (200) must be replaced, which has the problem of requiring a long time of work and high difficulty of work.

[0083] To improve this, the waveguide support member (300) according to the present invention can support the waveguide (200) by being installed on the opposite side of the remote plasma generating member (500) of the upper lead member (120) so that the upper lead member (120) can be hinge-rotated integrally with the remote plasma generating member (500) through the hinge member (20) to allow replacement and separation of the waveguide (200) when the opening (111) is open.

[0084] Thus, the waveguide support member (300) can be separated from the upper lead member (120) when the upper lead member (120) is hinge-rotated so that the opening (111) is open, thereby allowing the waveguide (200) to be removed in the upward direction, that is, in the direction opposite to the remote plasma generating member (500) of the upper lead member (120).

[0085] The above waveguide support member (300) can have its bottom surface aligned with the bottom surface of the upper lead member (120) while inserted into the insertion groove (122), and accordingly, the upper liner (440) described later can be installed on the same plane.

[0086] In particular, the waveguide support member (300) is positioned so that its bottom surface forms a plane with the bottom surface of the upper lead member (120) when inserted into the insertion groove (122), and as a plane is formed, the normal installation of the waveguide support member (300) can be easily verified, and if the waveguide support member (300) protrudes or does not form a plane with the bottom surface of the upper lead member (120), the abnormal installation state can be immediately verified.

[0087] The above waveguide support member (300) may have a supporting inclined surface (301) formed on its inner surface corresponding to the waveguide inclined surface (201), and may have a supporting inclined surface (301) formed on its inner surface corresponding to the waveguide (200) having a waveguide inclined surface (201) formed on its outer surface to have a tapered shape.

[0088] At this time, the support inclined surface (301) protrudes inwardly from the inner surface of the through hole (121) on the plane to support the waveguide (200) installed through the through hole (121), and thereby can support the waveguide (200) by interfering with the waveguide inclined surface (201) and aligning it in the correct position.

[0089] To this end, the waveguide support member (300) may include an annular support ring (310) installed on the bottom surface of the upper lead member (120), and a fastening member (320) that penetrates the support ring (310) and is coupled to the bottom surface of the upper lead member (120) to fix the support ring (310).

[0090] That is, with the support ring (310) inserted into the insertion groove (122) and positioned therein, a plurality of fastening members (320) are passed through the bottom surface and coupled to the bottom surface of the upper lead part (120), thereby allowing for installation coupled with the upper lead part (120).

[0091] The above gas injection unit (400) is configured to be installed below the upper lead unit (120) and to inject process gas introduced through the waveguide (200) into the processing space (S), and various configurations are possible.

[0092] For example, the gas injection unit (400) may include a support frame (410) installed at the bottom of the upper lead unit (120) with the center penetrating in the vertical direction, and an injection plate (420) installed on the inner surface of the support frame (410) and having a plurality of injection ports (421) formed therein.

[0093] Additionally, the gas injection unit (400) may additionally include a lower liner (430) that is installed on the inner surface and supports the injection plate (420).

[0094] Additionally, the gas injection unit (400) may further include an upper liner (440) that is supported and installed on the inner surface through an injection plate (420).

[0095] The above support frame (410) has a center that penetrates in the vertical direction and can be installed at the bottom of the upper lead part (120).

[0096] For example, the support frame (410) may include a flange portion (411) that is radially extended to be supported on a stepped portion of the chamber body (110), and an extension portion (412) that is extended downward from the flange portion (411).

[0097] The above flange portion (411) is configured to be formed to extend radially at the top and may be supported by the stepped portion of the chamber body (110) described above, and may be configured to be coupled to the chamber body (110) as a bolt passes through and is fastened to the chamber body (110).

[0098] At this time, the flange portion (210) may have a supporting surface on the bottom surface that is in contact with and supported by being supported on the stepped portion, and may be inserted into and supported on the inner surface of the chamber body (110) that forms the opening (111).

[0099] The above extension portion (412) is configured to extend downward from the flange portion (411), and together with the flange portion (411), forms an inner surface through which the center is penetrated, and can extend downward to at least a part of the inner surface of the chamber body (110).

[0100] At this time, the extension part (412) can set the area of ​​the processing space (S) defined through the lower liner (430) described later.

[0101] Additionally, the support frame (410) may be formed with a liner support portion that protrudes from the inner surface at the bottom and supports the lower liner (430) described later. In this case, the liner support portion may be configured to support the lower liner (430) installed on the inner surface by protruding from the bottom of the extension portion (412) as shown in FIG. 3.

[0102] At this time, the inner surface of the liner support part and the inner surface of the lower liner (430) described later, which is supported and installed on the liner support part, can form the same plane, and accordingly, by maintaining the same spacing as the side wall of the substrate support part (30) inserted and arranged into the processing space, the generation of vortices in the airflow flowing downward in the processing space (S) can be minimized and the formation of a uniform airflow can be induced.

[0103] Additionally, the support frame (410) may be formed of a metal material to ensure support stability, ease of processing, and rigidity for the installed lower liner (430) and upper liner (440), and accordingly, the liner support may be formed of a metal and may be made of a different material from the lower liner (430) that supports it.

[0104] The above injection plate (420) is installed on the inner surface of the support frame (410) and is configured to have a plurality of injection ports (421) formed therein, and various configurations are possible.

[0105] The above injection plate (420) is installed on the inner surface of the support frame (410) and is configured to have a plurality of injection ports (321) formed therein, and various configurations are possible.

[0106] At this time, the injection plate (420) may be a plate formed of quartz, ceramic, or a combination thereof, and may be configured to have a plurality of injection ports (421) formed to penetrate from top to bottom, thereby diffusing the process gas introduced and delivered through the pipe section (210) and injecting it into the processing space (S).

[0107] At this time, the injection plate (420) can appropriately diffuse and inject process gas through a plurality of injection ports (421).

[0108] The lower liner (430) is installed on the inner surface of the support frame (410) and is configured to support the injection plate (420), and various configurations are possible.

[0109] The lower liner (430) is configured to be installed on the inner surface of the support frame (410) to form the side of the processing space (S), and can be applied in a shape corresponding to the inner surface of the support frame (410).

[0110] For example, the lower liner (430) may be formed with a through hole in the center and may be composed of an annular material of quartz, ceramic, or a combination thereof corresponding to a cylindrical support frame (410), and as another example, may be composed of an angular material of quartz, ceramic, or a combination thereof corresponding to an angular support frame (410).

[0111] Meanwhile, the lower liner (430) is directly seated and supported on the liner support portion of the inner surface of the support frame (410), and its thickness corresponds to that of the liner support portion, so that its inner surface forms a plane with the inner surface of the liner support portion.

[0112] In addition, the lower liner (430) can be supported and installed on the liner support, and a spray plate (420) can be positioned on the top to support the edge of the spray plate (420).

[0113] The upper liner (440) is configured to be installed by being supported on the inner surface through a spray plate (420), and various configurations are possible.

[0114] The upper liner (440) may be configured to be supported on the injection plate (420) and to form a diffusion space for the process gas introduced through the waveguide (200) together with the upper surface of the injection plate (420).

[0115] That is, the upper liner (440) may have a structure with an open lower side to be supported on the injection plate (420) as shown in FIG. 3, and a through hole of a size corresponding to the waveguide (200) is formed on the upper surface so as to deliver the process gas introduced through the waveguide (200) to the injection plate (420).

[0116] At this time, the upper liner (440) can form a diffusion space for diffusing the process gas introduced through the waveguide (200) together with the upper surface of the injection plate (420), and can be composed of a material of quartz, ceramic, or a combination thereof to prevent the reaction and extinction of the process gas in a radical state remaining in the diffusion space, and can be exposed on the inner surface with these materials.

[0117] In particular, the upper liner (440) may be configured to cover the bottom surface of the upper lead part (120) and the waveguide support part (300) to prevent exposure to the diffusion space of the upper lead part (120), the waveguide support part (300), and the support frame (410) made of metal material provided on the upper side.

[0118] Furthermore, the upper liner (440) can have its upper surface attached to the lower surface of the upper lead part (120) so as to be fixed while supported by the injection plate (420).

[0119] Thus, the upper liner (440) can form the side and upper surfaces of the diffusion space, the upper surface of the injection plate (420) can form the lower surface of the diffusion space, and the diffused process gas can be guided to be delivered to the lower processing space (S) through the injection port (421).

[0120] The above remote plasma generator (500) is installed to communicate with a waveguide (200) on the upper side of the upper lead part (120) and is configured to supply radicalized process gas through the waveguide (200), and various configurations are possible.

[0121] The above remote plasma generator (500) may be configured to be provided on the upper lead part (120) to plasmaize and supply process gas.

[0122] In particular, the remote plasma generator (500) can communicate with the waveguide (200) to deliver process gas, particularly process gas in a radical state, through plasma.

[0123] That is, the remote plasma generator (500) can be configured to supply process gas of hydrogen radicals to the processing space (S), and can form a supply path to supply not only process gas but also the various gases mentioned above to the processing space (S).

[0124] In addition, the substrate processing device according to the present invention may further include a substrate support member (30) installed to support a substrate (1) within a chamber body (110).

[0125] At this time, the substrate support member (30) may be equipped with a lift pin (not shown) for supporting the substrate (1) when loading or unloading the substrate (1).

[0126] For example, the substrate support member (30) may include a substrate support plate (31) that supports the substrate (1) on an upper surface, and a substrate support shaft (33) that is installed by penetrating the process chamber (100) downward from the substrate support plate (31).

[0127] The above substrate support plate (31) is configured to be installed on the lower side of the gas injection unit (400) and on which the substrate (1) is placed, and any configuration for supporting the substrate is possible.

[0128] At this time, the substrate support plate (31) can be installed to be able to move up and down through the up and down driving unit (40) described later for introducing and discharging the substrate (1) through the gate (119), as shown in FIG. 1, and furthermore, a temperature control member such as a heater can be installed for temperature control, such as heating or cooling the substrate (1).

[0129] The above substrate support shaft (33) may be configured such that one end penetrates the lower surface of the process chamber (100) to support the lower surface of the substrate support plate (31), and the other end is connected to the upper and lower drive unit (40) to move in the upper and lower direction.

[0130] That is, the substrate support shaft (33) is connected to an up-and-down drive unit (40) to position the substrate (1) introduced and removed through the gate (119) at an appropriate height, and furthermore, to move in an up-and-down direction so that the substrate support plate (31) is inserted into the lower liner (430), and accordingly, power generated through the up-and-down drive unit (40) can be transmitted to the substrate support plate (31).

[0131] The above-described upper and lower driving unit (40) is configured to move the substrate support unit (30) in the upper and lower direction, and various configurations are possible.

[0132] For example, the above-described upper and lower drive unit (40) may be installed on the lower side of the process chamber (100) and connected to the end of the substrate support shaft (33).

[0133] At this time, a bellows (32) may be provided to surround the substrate support shaft (33) between the bottom surface of the process chamber (100) and the upper and lower drive unit (40) to prevent gas leakage from the processing space (S) through the bottom surface of the substrate support shaft (33).

[0134] The replacement process of the waveguide (200) of the substrate processing device according to the present invention will be described in detail below with reference to the drawings.

[0135] As shown in FIG. 4a and FIG. 4b, the substrate processing device according to the present invention can hinge rotate the waveguide (200), waveguide support part (300), and remote plasma generating part (500) together with the upper lead part (120) by hinge rotation of the upper lead part (120) relative to the chamber body (110) through the hinge part (20).

[0136] Thus, the opening (111) can be opened, and the opposite side of the remote plasma generating part (500) of the upper lead part (120) can be reversed so that it faces upward, and accordingly, the second side of the upper lead part (120), which is the opposite side of the first side where the remote plasma generating part (500) is installed, can be exposed to the upper side.

[0137] At this time, the waveguide support member (300) is installed by being inserted into an insertion groove (122) formed on the second surface of the upper lead member (120). As shown in FIG. 4c, the waveguide support member (300) can be separated by releasing the fastening member (310), and the waveguide (200) can be removed and separated through the exposed through hole (121) and the waveguide (200) can be installed in reverse order.

[0138] Hereinafter, another embodiment of the substrate processing apparatus according to the present invention will be described in detail with reference to the attached drawings.

[0139] Meanwhile, in the description of the present embodiment, the same terms and drawing numbers are used for configurations identical to those in the previously described embodiment, and redundant descriptions are omitted; thus, the previously described description may be applied identically except for parts that differ.

[0140] A substrate processing device according to the present invention comprises, as shown in FIG. 5, a process chamber (100) that forms a processing space (S) inside; a waveguide (200) that is installed penetrating the upper surface of the process chamber (100) and introduces process gas from the outside; a remote plasma generator (500) that communicates with the waveguide (200) on the upper side of the waveguide (200) and supplies process gas that has been radicalized through a remote plasma; and a support member (600) that is installed surrounding the waveguide (200) on the upper surface of the process chamber (100) and directly or indirectly supports the remote plasma generator (500).

[0141] Additionally, the substrate processing device according to the present invention may further include a sealing part (700) installed between the support part (600) and the remote plasma generating part (500) to surround the upper end of the waveguide (200) and form a gap (D) between the support part (600) and the remote plasma generating part (500), and sealing the gap (D); and a support frame part (800) installed on the upper surface of the process chamber (100) to support the remote plasma generating part (500) spaced apart from the upper surface of the process chamber (100).

[0142] The above process chamber (100) is configured to form a processing space (S) inside, and as described above, a redundant description is omitted.

[0143] The above waveguide (200) is configured to be installed by being supported on a waveguide support (300) by penetrating the upper surface of the process chamber (100), i.e., the upper lead part (120), and may be configured to introduce process gas by communicating with a remote plasma generation part (500).

[0144] In particular, the waveguide (200) may be installed such that its upper end is positioned higher than the upper surface of the support member (600) in order to prevent the process gas transmitted through the remote plasma generator (500) from being lost.

[0145] That is, the waveguide (200) is positioned so that its upper end protrudes to a position higher than the upper surface of the body portion (610) of the support portion (600) described later, and can be positioned in close proximity to the delivery channel (502) for delivering the radicalized process gas of the remote plasma generation portion (500).

[0146] In this case, the remote plasma generator (500) may have a delivery channel (502) formed therein to deliver the radicalized process gas to the waveguide (200), and the delivery channel (502) may have a diameter smaller than the inner diameter of the waveguide (200) to deliver the process gas to the waveguide (200).

[0147] That is, as shown in FIGS. 5 and 6, the above-mentioned transmission channel (502) is formed such that its diameter is smaller than the inner diameter of the waveguide (200), thereby positioning the transmission channel (502) in a position that overlaps with the waveguide (200), so that the process gas being transmitted is not leaked to the outside of the waveguide (200).

[0148] In particular, by aligning the transfer channel (502) in a position overlapping on a plane with the diameter of the transfer channel (502) being smaller than the inner diameter of the waveguide (200), a gap (D) is formed between the remote plasma generator (500) and the support member (600), and furthermore, in order to prevent damage to the waveguide (200), leakage of process gas into the gap (D) can be minimized even when the direct connection relationship with the transfer channel (502) of the remote plasma generator (500) is omitted.

[0149] Thus, the waveguide (200) prevents the process gas transmitted from the remote plasma generator (500) from being exposed to the metal support (600), i.e., the body (610), thereby preventing the extinction of radicals and allowing the lifespan to be increased through the non-metal waveguide (200) and transmitted to the processing space (S).

[0150] Meanwhile, the specific configuration of the above waveguide (200) is as described above, so a redundant description is omitted.

[0151] The above support member (600) may be configured to surround the waveguide (200) on the upper surface of the process chamber (100) and to support the remote plasma generator (500) directly or indirectly.

[0152] For example, the support member (600) can support the remote plasma generator (500) by directly contacting and supporting the bottom surface of the remote plasma generator (500) and, together with the support frame (800) described later, support the remote plasma generator (500) so as to be spaced apart from the upper surface of the process chamber (100).

[0153] In this case, a step may be formed on the bottom surface of the remote plasma generating unit (500) so that the waveguide (200) protrudes to a position higher than the upper surface of the body part (610). More specifically, the central side of the bottom surface of the remote plasma generating unit (500) corresponding to the waveguide (200) is formed inwardly in a groove shape, and a step is formed such that the edge side that is in contact with and supported by the body part (610) protrudes relatively, so that the body part (610) directly contacts and supports the remote plasma generating unit (500), while the upper end of the waveguide (200) is positioned higher than the upper surface of the body part (610).

[0154] In addition, as another example, the support member (600) may indirectly support the remote plasma generating member (500) through the sealing member (700) described later, and in this case, a gap (D) may be formed between the support member and the remote plasma generating member (500).

[0155] That is, the support member (600) is configured to have a hollow interior so as to be installed surrounding the waveguide (200) on the upper lead member (120), and its lower end is fixedly installed by being fastened to the upper lead member (120), and can indirectly support the remote plasma generator (500) which is spaced upward so as to form a gap (D) between it and the remote plasma generator (500).

[0156] At this time, the waveguide (200) may be positioned so as to protrude upward from the upper surface of the body part (610) so that its upper end is located within the gap (D), and the support part (600) may be formed of a metal material considering rigidity and ease of processing for support, unlike the waveguide (200) made of quartz or ceramic material.

[0157] At this time, the support member (600) can be installed such that its inner surface is spaced apart from the outer surface of the waveguide (200), with the hollow being formed with an inner diameter larger than the outer diameter of the waveguide (200).

[0158] To this end, the apparatus may include a body portion (610) installed on the upper surface of the process chamber (100) surrounding the waveguide (200) and having an upper flange (611) formed that extends radially at the top, and a fastening bolt (620) that passes through the upper flange (611) and is fastened to a fastening groove (503) formed on the bottom surface of the remote plasma generating portion (500) to connect the body portion (610) and the remote plasma generating portion (500).

[0159] Additionally, the support member (600) may further include a lower sealing member (630) provided between it and the upper surface of the process chamber (100).

[0160] The above body part (610) may be configured to surround the waveguide (200) on the upper surface of the process chamber (100) and may have a hollow formed inside.

[0161] At this time, the body part (610) may include an upper flange (611) for supporting the remote plasma generating part (500) by being spaced apart so that a gap (D) is formed upward through the sealing part (700), as shown in FIG. 5, and a fastening bolt (620) is installed therein and a sealing part (700) described later, as shown in FIG. 5, a lower flange (613) that is positioned on the upper lead part (120) and has a fastening means (640) installed through it to fix the body part (610) to the upper lead part (120), and a body part (612) formed between the upper flange (611) and the lower flange (613).

[0162] The above-mentioned fastening bolt (620) is configured to pass through the upper flange (611) and be fastened into a fastening groove (503) formed on the bottom surface of the remote plasma generating part (500) to connect the body part (610) and the remote plasma generating part (500), and various configurations are possible.

[0163] For example, the above fastening bolt (620) can be fastened to a fastening groove (503) formed on the bottom surface of the remote plasma generating part (500) by penetrating an upper flange (611) that is radially extended and formed on the upper part of the body part (610).

[0164] That is, the above fastening bolt (620) penetrates while bolted to the upper flange (611) and is bolted to the bottom surface of the remote plasma generating part (500), thereby allowing the remote plasma generating part (500) to be fixed in a fixed position relative to the support part (600).

[0165] Meanwhile, when a gap (D) is formed between the remote plasma generating part (500) and the body part (610), not only is a sealing part (700) installed, but a spacer member may also be additionally provided.

[0166] The lower sealing member (630) may be configured to seal a through hole (121) in which a waveguide (200) is installed, provided between the upper surface of the process chamber (100).

[0167] For example, the lower sealing member (630) can seal the through hole (121) by being an O-ring installed to surround the through hole (121) between the lower flange (613) and the upper surface of the upper lead part (120).

[0168] Meanwhile, the support member (600) may have a refrigerant passage (601) formed therein so that a refrigerant for cooling circulates inside, in order to prevent damage to the lower sealing member (630) and the sealing member (720) described later due to high temperature.

[0169] At this time, the refrigerant passage (601) may be configured to be formed within the body portion (610), and, for example, may be formed in the body portion (612) to lower the temperature through heat exchange via the refrigerant circulating inside and prevent damage to various sealing members.

[0170] Additionally, the above refrigerant passage (601) can continuously supply a refrigerant at a relatively low temperature through a heat exchanger installed externally while the refrigerant circulates, and at this time, the refrigerant supply pipe (90) and the refrigerant discharge pipe can be installed on the upper lead part (120).

[0171] The sealing portion (700) may be configured to surround the upper end of the waveguide (200), be installed between the support portion (600) and the remote plasma generating portion (500) so that a gap (D) is formed between the support portion (600) and the remote plasma generating portion (500), and seal the gap (D).

[0172] That is, the sealing part (700) may be configured to form the gap (D) and seal the gap (D) at the same time by surrounding the upper end of the waveguide (200), which is installed in the gap (D) as shown in FIG. 6 and arranged so that its end protrudes above the upper flange (611), and by contacting and supporting the remote plasma generating part (500).

[0173] For example, the sealing portion (700) may include a sealing frame (710) installed to surround the upper end of the waveguide (200) between the support portion (600) and the remote plasma generating portion (500), as shown in FIG. 6, and a sealing member (720) provided on the outer surface of the sealing frame (710) to support the remote plasma generating portion (500) and seal the gap (D).

[0174] The above sealing frame (710) is an annular structure that can be installed to surround the top of the waveguide (200), and can be installed such that its inner surface is spaced apart from the outer surface of the waveguide (200) as it is formed of metal with a material different from that of the waveguide (200).

[0175] That is, the sealing frame (710) is configured to be installed between the bottom surface of the remote plasma generating unit (500) and the top flange (611), and can be formed of a metal material to ensure sufficient rigidity. Accordingly, in order to prevent damage to the waveguide (200) due to contact during the installation process with the waveguide (200), the inner diameter is formed larger than the outer diameter of the waveguide (200) and can be installed so as to be spaced apart from the outer surface of the waveguide (200).

[0176] In addition, during this process, the sealing frame (710) may be installed so that its upper end is positioned higher than the upper end of the waveguide (200) to prevent the upper end of the waveguide (200) from coming into contact with the remote plasma generator (500), and may be provided to cover the exposed end portion that protrudes above the upper flange (611) of the waveguide (200) on the side.

[0177] Additionally, as shown in FIG. 6, the sealing frame (710) can be inserted and positioned in a groove (501) formed with a size corresponding to the bottom surface of the remote plasma generator (500), and can be installed by being supported on the upper flange (611) with its lower end inserted into the upper flange (611).

[0178] Meanwhile, since the sealing frame (710) is formed of metal, it is configured to be easily replaceable even if it becomes partially contaminated by reaction with the process gas being delivered, thus having the advantage of enabling maintenance through replacement.

[0179] The sealing member (720) is configured to surround the outer surface of the sealing frame (710) and may be configured to seal the gap (D) by being applied as an O-ring.

[0180] For example, the sealing member (720) is installed on the outer surface of the sealing frame (710) and can seal the gap (D) by being in close contact between the outer bottom surface of the groove (501) of the remote plasma generator (500) and the upper surface of the upper flange (611).

[0181] Additionally, the sealing member (720) can be in contact between the remote plasma generating part (500) and the upper surface of the upper flange (611) to maintain a gap (D) between the remote plasma generating part (500) and the upper surface of the upper flange (611) while simultaneously supporting the remote plasma generating part (500).

[0182] The above support frame (800) is configured to be installed on the upper surface of the process chamber (100) and to support the remote plasma generator (500) spaced apart from the upper surface of the process chamber (100), and various configurations are possible.

[0183] For example, the support frame part (800) may include, as shown in FIG. 5, a support plate (810) that supports the remote plasma generator (500) on its upper surface and has a communication hole (801) formed in the center for the support part (600) to be connected to the remote plasma generator (500), and a support shaft part (820) that supports the support plate (810) with one end connected to the support plate (810) and the other end connected to the upper surface of the process chamber (100).

[0184] The above support plate (810) may be configured to support the remote plasma generating unit (500) on its upper surface, with a communication hole (801) formed in the center for the support member (600) to be connected to the remote plasma generating unit (500).

[0185] That is, the support plate (810) is a plate-shaped plate, and a communication hole (801) into which an upper flange (611) is inserted is formed in the center, and can support a remote plasma generating part (500) on the upper surface.

[0186] Meanwhile, the support plate (810) can not only simply support the remote plasma generator (500) by separating it from the upper surface of the process chamber (100), but also guide the remote plasma generator (500) to be installed in a fixed position relative to the waveguide (200) and the support member (600).

[0187] In particular, the above waveguide (200) is made of a non-metal such as a brittle ceramic or quartz with relatively low rigidity to increase the lifespan of the process gas, and is positioned protruding upward from the support member (600) at a location closest to the remote plasma generator (500). Since there is a risk of damage due to contact during the installation process of the remote plasma generator (500), it is necessary to install the remote plasma generator (500) in the correct position.

[0188] To this end, the support plate (810) can induce the remote plasma generator (500), which is supported by being coupled at the correct position with the support shaft (820) that is pre-installed at the correct position of the upper lead part (120) of the process chamber (100), to be installed in an aligned position.

[0189] For example, the support plate (810) may include a plate (811) that supports a remote plasma generator (500), and a protruding fastening part (812) that is formed protruding from the side of the plate (811) and coupled with a support shaft part (820) so that the remote plasma generator (500) supported on the plate (811) is installed in a fixed position relative to the waveguide (200).

[0190] At this time, the protruding fastening part (812) is formed with a plurality of protrusions on the side of the plate (811) to correspond to the support shaft part (820), thereby inducing it to be fastened to the support shaft part (820) in a fixed position, and the remote plasma generating part (500) supported on the plate (811) can be aligned and installed according to such fixed position fastening.

[0191] The above support shaft portion (820) may be configured such that one end is connected to the support plate (810) and the other end is connected to the upper surface of the process chamber (100) to support the support plate (810).

[0192] At this time, the support shaft portion (820) can be coupled to the support plate (810) so that the height of the support plate (810) can be adjusted, thereby allowing the height to be appropriately adjusted when installing the remote plasma generator (500).

[0193] For example, the support shaft portion (820) may include a support shaft (821) installed through the support plate (810) as shown in FIG. 7, and a nut portion (822) bolted to the support shaft (821) to support the support plate (810) and adjust the height of the support plate (810) through rotation.

[0194] Additionally, the support shaft portion (820) may include an upper coupling portion (823) to which the upper end of the support shaft (821) penetrating the upper surface of the support plate (810) is connected, and a lower coupling portion (824) to which the lower end of the support shaft (821) is connected and which is connected to the upper surface of the upper lead portion (120).

[0195] Meanwhile, the support shaft portion (820) may be provided in four places, each corresponding to a vertex on the plane with respect to the support plate (810), and the horizontal alignment of the support plate (810) can be maintained by adjusting the height of the support plate (810) connected at each place.

[0196] Furthermore, the support shaft (820) can be installed at a precise height by lowering the support plate (810) at a low speed while the support plate (810) supporting the remote plasma generator (500) is fastened, thereby confirming the relative position with the waveguide (200) and the support member (600). For example, the remote plasma generator (500) can be installed at a preset height by setting the state of being lowered to the lowest point as the correct position and lowering the support plate (810) to the lowest point at a low speed.

[0197]

[0198] The foregoing merely describes some preferred embodiments that can be implemented by the present invention. As is well known, the scope of the present invention should not be interpreted as being limited to the above embodiments, and all technical concepts that share the fundamental principles with the technical concept of the present invention described above shall be considered to be included within the scope of the present invention.

Claims

1. A process chamber (100) that forms a processing space (S) inside; A waveguide (200) installed through the upper surface of the process chamber (100) and introducing process gas from the outside; A remote plasma generator (500) that communicates with the waveguide (200) on the upper side of the waveguide (200) and supplies radicalized process gas through remote plasma; It includes a support member (600) that is installed surrounding the waveguide (200) on the upper surface of the process chamber (100) and directly or indirectly supports the remote plasma generator (500). The above waveguide (200) is, A substrate processing device characterized by being installed such that the upper end is positioned higher than the upper surface of the support member (600) in order to prevent the extinction of the process gas transmitted through the remote plasma generation unit (500).

2. In Claim 1, The above waveguide (200) is, It is formed of quartz, ceramic, or a combination thereof, The above support member (600) is, A substrate processing device characterized by being formed of a metal material.

3. In Claim 1, The above support member (600) is, A substrate processing device characterized by being installed such that the inner surface is spaced apart from the outer surface of the waveguide (200).

4. In Claim 1, The above support member (600) is, A substrate processing device characterized by comprising: a body part (610) which is installed around the waveguide (200) on the upper surface of the process chamber (100) and has an upper flange (611) formed that extends radially at the top, and a fastening bolt (620) which passes through the upper flange (611) and is fastened to a fastening groove (503) formed on the lower surface of the remote plasma generating part (500) to connect the body part (610) and the remote plasma generating part (500).

5. In Claim 1, The above support member (600) is, A substrate processing apparatus characterized by including a lower sealing member (630) provided between the upper surface of the process chamber (100).

6. In Claim 1, The above support member (600) is, A substrate processing device characterized by having a refrigerant passage (601) formed therein to allow refrigerant for cooling to circulate inside.

7. In Claim 1, A substrate processing apparatus characterized by additionally including a sealing part (700) that surrounds the upper end of the waveguide (200), is installed between the support part (600) and the remote plasma generating part (500) to form a gap (D) between the support part (600) and the remote plasma generating part (500), and seals the gap (D).

8. In Claim 7, The above sealing part (700) is, A substrate processing device characterized by being installed such that the inner surface is spaced apart from the outer surface of the waveguide (200).

9. In Claim 7, The above sealing part (700) is, A substrate processing device characterized by being installed such that the upper end of the waveguide (200) is positioned higher than the upper end of the waveguide (200) to prevent the upper end of the waveguide (200) from coming into contact with the remote plasma generating unit (500).

10. In Claim 7, The above sealing part (700) is, A substrate processing device characterized by including a sealing frame (710) installed to surround the upper end of the waveguide (200) which protrudes upward above the upper surface of the support member (600) between the support member (600) and the remote plasma generating member (500), and a sealing member (720) provided on the outer surface of the sealing frame (710) to seal the gap (D).

11. In Claim 10, The above sealing frame (710) is, A substrate processing device characterized by being formed of a metal material.

12. In Claim 1, A substrate processing apparatus characterized by additionally including a support frame part (800) installed on the upper surface of the process chamber (100) and supporting the remote plasma generating part (500) spaced apart from the upper surface of the process chamber (100).

13. In Claim 12, The above support frame part (800) is, A substrate processing apparatus characterized by comprising a support plate (810) that supports the remote plasma generating unit (500) on its upper surface, having a communication hole (801) formed in the center for the support member (600) to be connected to the remote plasma generating unit (500), and a support shaft member (820) that supports the support plate (810) with one end connected to the support plate (810) and the other end connected to the upper surface of the process chamber (100).

14. In Claim 13, The above support plate (810) is, A substrate processing device characterized by including a plate (811) supporting the remote plasma generator (500) and a protruding fastening part (812) formed protruding from the side of the plate (811) to be coupled with the support shaft part (820) so that the remote plasma generator (500) supported by the plate (811) is installed in a fixed position relative to the waveguide (200).

15. In Claim 13, The above support shaft portion (820) is, A substrate processing device characterized by including a support shaft (821) installed through the support plate (810), and a nut part (822) bolted to the support shaft (821) to support the support plate (810) and to adjust the height of the support plate (810) through rotation.

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