Substrate treatment apparatus

Abstract

The present invention relates to a substrate treatment apparatus and a substrate treatment method, and, more specifically, to a substrate treatment apparatus and a substrate treatment method for performing deposition on a substrate. Disclosed is the substrate treatment apparatus comprising: a process chamber (100) which forms an inner space, and which has, at a side surface, a first exhaust hole (101) connected to a vacuum pump, and a discharge part (102) connected to a through hole (103) formed in the inner surface of the inner space such that the inner space and the first exhaust hole (101) can communicate; a chamber liner part (200) which is provided on the inner surface of the process chamber (100) so as to form, therein, a treatment space (S) for treating a substrate, and which has a discharge flow path communicating with the discharge part (102) so that the process gas sprayed into the treatment space (S) is discharged to the outside; and an exhaust liner part (300) which is detachably provided on the inner surface of the discharge part (102) and which has an exhaust flow path (S3) for exhausting, through the first exhaust hole (101), the exhaust gas transferred through the discharge flow path.

Description

Substrate processing device

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method, and more specifically, to a substrate processing apparatus that performs deposition on a substrate.

[0002] Recently, as the linewidth of semiconductor devices decreases, technical improvements are required to enhance the performance and density of semiconductor devices. In particular, capping technology for metal wiring is being developed to compensate for the increase in current density in wiring resulting from the reduction in linewidth.

[0003] By applying capping in this manner, the reliability of electrical conduction is improved through the high conductivity of the capping material, and it can prevent electromigration by acting as a protective layer for metal wiring, as well as effectively prevent degradation and oxidation of various components due to the surrounding environment.

[0004] For example, the capping technology may be applied as cobalt capping, which improves the properties and stability of copper by depositing a thin layer of cobalt on the surface of copper wiring. More specifically, it may be applied by depositing cobalt on the surface of copper wiring on a thin film substrate on which copper and a low dielectric constant material are formed, and then performing nitriding treatment.

[0005] In this nitriding process, ionized nitrogen can be used to activate the thin film surface, remove impurities, and induce quality improvement through deformation including surface etching via ion bombardment; however, there is a problem in that the use of such process gases may also damage the existing process chamber.

[0006] The objective of the present invention is to provide a substrate processing device that facilitates the installation, replacement, and maintenance of a liner to prevent damage to the process chamber, in order to solve the above-mentioned problems.

[0007] The present invention is created to achieve the purpose of the present invention as described above, and the present invention discloses a substrate processing device comprising: a process chamber (100) having an internal space and a first exhaust hole (101) connected to a vacuum pump on the side, and a discharge section (102) connected to a through hole (103) formed on the inner side of the internal space to communicate the internal space and the first exhaust hole (101); a chamber liner section (200) installed on the inner surface of the process chamber (100) to form a processing space (S) for processing a substrate inside, and having a discharge passage formed in communication with the discharge section (102) to discharge process gas injected into the processing space (S) to the outside; and an exhaust liner section (300) detachably installed on the inner surface of the discharge section (102) and forming an exhaust passage (S3) for exhausting exhaust gas delivered through the discharge passage through the first exhaust hole (101).

[0008] The above process chamber (100) may have the discharge portion (102) formed as a groove structure on the upper or lower surface.

[0009] The process chamber (100) is formed to communicate with the exhaust passage (S3) on the upper or lower surface of the discharge section (102) and may additionally include a second exhaust hole (104) with a diameter smaller than that of the first exhaust hole (101), which is connected to an external vacuum pump.

[0010] The above process chamber (100) may have a gate (109) formed on the side opposite to the through hole (103) formed on the inner side for introducing and removing a substrate (1).

[0011] The chamber liner section (200) may include an upper liner section (210) installed on the inner surface of the process chamber (100) and having a plurality of exhaust holes (212a) formed therein that are open to the processing space (S) for exhausting the processing space (S), and a lower liner section (220) installed on the lower side of the upper liner section (210) on the inner surface of the process chamber (100) and transmitting exhaust gas received from the upper liner section (210) to the exhaust liner section (300).

[0012] The upper liner portion (210) has a hollow formed to form part of the processing space (S), and its lower surface is open to form an annular first exhaust passage (S1) inside together with the upper surface of the lower liner portion (220).

[0013] The upper liner portion (210) may include an upper liner (211) that forms the first exhaust passage (S1) with the upper and lower surfaces open inside, and a liner covering portion (212) that is installed to cover the upper surface of the upper liner (211) and has the plurality of exhaust holes (212a) formed therein.

[0014] The upper liner portion (210) may have a plurality of exhaust holes (212a) formed along the perimeter of the inner surface facing the processing space (S).

[0015] The lower liner portion (220) may have a hollow formed to form a part of the processing space (S), and may have an annular second exhaust passage (S2) formed inside that communicates between the first exhaust passage (S1) and the third exhaust passage (S3).

[0016] The lower liner portion (220) may have a plurality of baffle holes (221) formed on its upper surface to communicate the first exhaust passage (S1) and the second exhaust passage (S2), and a communication hole (222) formed on its outer surface to communicate the exhaust liner portion (300) so that the second exhaust passage (S2) and the exhaust passage (S3) communicate with each other.

[0017] It may additionally include a connecting liner (600) that is installed to correspond to the inner surface of the through hole (103), with one end connected to the communication hole (222) and the other end connected to the exhaust liner (300).

[0018] The exhaust liner portion (300) may include a first exhaust liner through-hole (301) formed at a position corresponding to the connecting liner portion (600) to communicate with the connecting liner portion (600), and a second exhaust liner through-hole (302) formed at a position corresponding to the first exhaust hole (101) to communicate with the first exhaust hole (101).

[0019] The exhaust liner section (300) may include a linear exhaust liner (310) provided on the outside of the through hole (103) on a flat surface, and a curved exhaust liner (320) provided in a curve from the end of the linear exhaust liner (310) on a flat surface toward the first exhaust hole (101).

[0020] It may additionally include a lower liner (700) installed to cover the inner surface and bottom surface of the process chamber (100) at the lower side of the lower liner section (220).

[0021] The process chamber (100) may include a cover portion (130) that covers the discharge portion (102) into which the exhaust liner portion (300) is inserted and installed.

[0022] The process chamber (100) and the exhaust liner (300) are made of metal, and the chamber liner (200) may include at least one material among ceramic and quartz.

[0023] The substrate processing device according to the present invention has the advantage of preventing damage to the process chamber caused by exhaust gas by providing not only a chamber liner section installed in the internal processing space of the process chamber but also an exhaust liner section forming an exhaust passage.

[0024] In addition, the substrate processing device according to the present invention has the advantage of easy installation, removal, and maintenance as the exhaust liner is detachably inserted and installed using individual components.

[0025] In particular, the substrate processing device according to the present invention has the advantage of preventing damage to the process chamber and improving durability while enabling stable exhaust by forming an exhaust passage solely through the installation of an exhaust liner and a chamber liner, thereby preventing the exposure of exhaust gas from the process chamber.

[0026] FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to the present invention.

[0027] FIG. 2 is a cross-sectional view showing a cross-sectional view in a different direction of the substrate processing apparatus according to FIG. 1.

[0028] FIG. 3 is a perspective view showing the chamber liner and exhaust liner sections of the substrate processing apparatus according to FIG. 1.

[0029] FIG. 4 is a plan view showing the installation of the exhaust liner section of the substrate processing device according to FIG. 1.

[0030] FIG. 5 is a perspective view showing the installation of the exhaust liner section of the substrate processing device according to FIG. 1.

[0031] The substrate processing apparatus according to the present invention will be described below with reference to the attached drawings.

[0032] A substrate processing device according to the present invention comprises, as illustrated in FIG. 1, a process chamber (100) having an internal space, a first exhaust hole (101) connected to a vacuum pump on the side, and a discharge section (102) connected to a through hole (103) formed on the inner side of the internal space to communicate the internal space and the first exhaust hole (101); a chamber liner section (200) installed on the inner surface of the process chamber (100) to form a processing space (S) for processing a substrate inside, and having a discharge passage formed in communication with the discharge section (102) to discharge process gas injected into the processing space (S) to the outside; and an exhaust liner section (300) detachably installed on the inner surface of the discharge section (102) and forming an exhaust passage (S3) for exhausting exhaust gas delivered through the discharge passage through the first exhaust hole (101).

[0033] In addition, the substrate processing device according to the present invention may further include a gas injection unit (400) installed on the upper surface of the process chamber (100) to introduce process gas from the outside and inject it into the processing space (S), and a substrate support unit (500) installed to support the substrate (1) within the processing space (S).

[0034] Additionally, the substrate processing device according to the present invention may further include a connecting liner (600) installed to correspond to the inner surface of the through hole (103), with one end connected to the communication hole (222) and the other end connected to the exhaust liner (300), and a lower liner (700) installed to cover the inner surface and bottom surface of the process chamber (100) below the lower liner (220).

[0035] Here, the substrate (1) as the target for processing according to the present invention is configured to perform substrate processing such as deposition, etching, and heat treatment, and any substrate such as a semiconductor manufacturing substrate, an LCD manufacturing substrate, an OLED manufacturing substrate, a solar cell manufacturing substrate, or a transparent glass substrate can be applied.

[0036] For example, the substrate (1) may be configured to include metal wiring, and may be configured to include at least one of tungsten (W), molybdenum (Mo), ruthenium (Ru) and copper (Cu), for example.

[0037] Additionally, the substrate (1) may include silicon (Si) as a configuration comprising a region containing a low-k material corresponding to the metal wiring, and may include at least one of SiO2, SiOF, and SiOC, for example.

[0038] Meanwhile, the process performed through the substrate processing apparatus according to the present invention is configured to perform deposition on a thin film, and the process gas used therein is configured to include a precursor gas and a reaction gas, and may include a precursor gas and a reaction gas of a cobalt compound containing cobalt (Co).

[0039] For example, the precursor gas may be a cobalt compound formed from a combination of Co, C, and O as a cyclopentadienyl-based organometallic precursor, and the reaction gas may include hydrogen (H2).

[0040] In addition, the above process gas may be a gas for treating the deposited thin film, and a gas containing nitrogen (N) may be applied as the gas for nitriding treatment.

[0041] For example, the process gas may include at least one of N2, NH3, and NH4, and can remove impurities in the cobalt thin film through treatment and induce etching of the deposited thin film.

[0042] At this time, the process gas can activate the thin film surface and remove impurities using nitrogen ionized by plasma, and induce quality improvement through deformation including etching on the surface via ion bombardment.

[0043] The above process chamber (100) can be formed of a metal material as a component forming an internal space.

[0044] For example, the process chamber (100) may include a chamber body (110) with an upper opening as shown in FIG. 1, and an upper lead (120) detachably coupled to the opening of the chamber body (110).

[0045] The above chamber body (110) is configured such that a substrate support member (500), etc., described later is installed therein, and one or more gates (109) for introducing and discharging a substrate (1) into and out of a processing space (S) may be formed on the side wall. The above process chamber (100) may be grounded.

[0046] Additionally, the chamber body (110) may have a chamber liner section (200) described later installed inside, and an exhaust liner section (300) may be installed, and a first exhaust hole (101) connected to a vacuum pump and an exhaust section (102) communicating with the first exhaust hole (101) may be formed on the outer surface to enable exhaust to the processing space (S).

[0047] Additionally, the chamber body (110) may have a through hole (103) additionally formed therein that penetrates and connects the internal space and the discharge part (102).

[0048] That is, the above chamber body (110) can be made of a metal material that is easy to process and highly durable, for example, aluminum, and a first exhaust hole (101), a discharge part (102), and a through hole (103) can be formed through processing.

[0049] More specifically, as shown in FIG. 1, the chamber body (110) may have a discharge portion (102) formed on the upper or lower surface and a first exhaust hole (101) formed on the side to communicate with the discharge portion (102).

[0050] At this time, the first exhaust hole (101) may be formed on one side of the internal space on a plane, corresponding to the position of the vacuum pump (10) positioned on one side of the front of the chamber body (110) to prevent interference with components installed on the side including the gas panel part (90) for delivering process gas supplied to the gas injection part (400) described later, as shown in FIG. 4.

[0051] At this time, the exhaust section (102) for installing the exhaust liner section (300) may be formed as a groove structure on the upper or lower surface of the chamber body (110), for example, formed as a groove on the upper surface at a position offset on one side of the planar surface of the chamber body (110), and the first exhaust hole (101) may be formed on the front side of the chamber body (110) in communication with the exhaust section (102).

[0052] Meanwhile, the chamber body (110) may have a through hole (103) formed to connect the internal space and the discharge section (102) so that the internal space, i.e., the processing space (S) formed through the chamber liner section (200), and the first exhaust hole (101) are connected.

[0053] The above chamber body (110) may include a through hole (103) formed to penetrate between the internal space and the discharge section (102), and the through hole (103) may be configured as a hole that horizontally penetrates the discharge section (102) from the inner side opposite the gate (109) described later, as shown in FIG. 1.

[0054] That is, the chamber body (110) can improve symmetry with respect to the processing space (S1) by forming a through hole (103) through which the side wall passes and a gate (109) facing each other.

[0055] Additionally, the chamber body (110) may be formed to communicate with the exhaust passage (S3) on the upper or lower surface of the discharge section (102), and may additionally include a second exhaust hole (104) with a diameter smaller than that of the first exhaust hole (101) and connected to an external vacuum pump.

[0056] For example, the second exhaust hole (104) may be configured to be connected to a vacuum pump positioned at the bottom of the process chamber (100) and formed to communicate with the discharge portion (102) of the chamber body (110), and the second exhaust hole (104) may be configured to have a smaller diameter than the first exhaust hole (101) described above.

[0057] That is, the second exhaust hole (104) is configured to be connected to a general vacuum pump of a relatively low capacity compared to the first exhaust hole (101) which is connected to a vacuum pump as a turbo pump of a relatively high capacity, so its diameter may be formed to be smaller than that of the first exhaust hole (101).

[0058] Additionally, the chamber body (110) may have a gate (109) formed on the side opposite to the through hole (103) formed on the inner side for introducing and removing a substrate (1).

[0059] That is, the gate (109) is formed by machining on the side facing the through hole (103) of the chamber body (110) so as to be configured for introducing and removing a substrate (1), and can be opened and closed through an external opening / closing valve.

[0060] In addition, the gate (109) is aligned with and penetrates the chamber liner portion (200) described later, so that the substrate (1) can be introduced into or removed from the processing space (S) without interference with the chamber liner portion (200).

[0061] The upper lead (120) is configured to be detachably coupled to the opening of the chamber body (110), and can be configured in various ways depending on the installation structure of the gas injection unit (400) described later.

[0062] For example, the upper lead (120) may be configured to extend the side wall of the chamber body (110) upward and to support the edge portion of the gas injection part (400).

[0063] At this time, the process chamber (100) including the upper lead (120) is generally grounded, and an insulating member (140) is installed so that power is applied through the power supply unit (500) described later, and the gas injection unit (400) acting as an electrode can be installed in a state electrically separated from the gas injection unit (400).

[0064] At this time, the upper lead (120) can support the gas injection part (400) in a state where it is electrically insulated by one or more insulating members (140) in the part that supports the gas injection part (400).

[0065] Meanwhile, the above process chamber (100) can be configured in various ways depending on the type of substrate processing to be performed, and a power supply system for performing substrate processing, a pressure control of the processing space (S), and an exhaust system for exhausting can be connected or installed.

[0066] Additionally, the process chamber (100) may include a cover portion (130) that covers an exhaust portion (102) into which an exhaust liner portion (300) is inserted and installed.

[0067] That is, it is installed in the chamber body (110) to cover the discharge portion (102) formed on the upper surface of the chamber body (110), thereby preventing external exposure of the exhaust liner portion (300) installed inside the discharge portion (102) and sealing the exhaust passage (S3) including the discharge portion (102).

[0068] To this end, the cover portion (130) is seated and coupled to a support step (111) formed along the edge of the discharge portion (102) of the chamber body (110) by having a flange formed at the top as shown in FIG. 1, and at least a portion of it is inserted into the discharge portion (102) and contacts the upper surface of the exhaust liner portion (300) installed therein to fix the exhaust liner portion (300).

[0069] The above gas injection unit (400) may be configured to be installed on the upper surface of the process chamber (100) to introduce process gas from the outside and inject it into the processing space (S).

[0070] That is, the gas injection unit (400) may be configured to be installed on the upper lead (120) to form a sealed processing space (S) together with the chamber liner unit (200), and to introduce process gas from the outside and inject it into the processing space (S).

[0071] At this time, the gas injection unit (400) can have its edge supported by an insulating member (140) between the upper lead (120), and accordingly, can be electrically insulated from the process chamber (100) and maintain an independent electrical state.

[0072] For example, the gas injection unit (400) can form a potential difference between itself and the substrate support unit (500) and form plasma in the processing space (S) by applying RF through the power supply unit (500) described later.

[0073] Meanwhile, the substrate support (500) and the gas injection unit (400) can not only form plasma as described above and perform a process using it, but also, if necessary, stop forming plasma and perform a process using simple heat, or omit the power supply unit (500) and perform only a reaction using simple heat.

[0074] In addition, any configuration is applicable to the above gas injection unit (400) as long as it is configured to introduce process gas from the outside and inject it into the processing space (S).

[0075] For example, the gas injection unit (400) may include a backing plate (410) installed on an upper lid (120) as a shower head assembly, and an injection plate (420) having a plurality of injection holes (421) formed on the lower part of the backing plate (410) to inject gas.

[0076] Furthermore, it is also obvious that it may be applied as an assembly including a diffusion plate (not shown) installed between the backing plate (410) and the injection plate (420).

[0077] The above substrate support member (500) is configured to support the substrate (1) within the processing space (S), and various configurations are possible.

[0078] At this time, the substrate support (500) may be grounded as a lower electrode of the substrate processing device or one or more RF power sources may be applied, and accordingly, a potential difference may be formed between it and the gas injection unit (400) described later as necessary to induce plasma in the processing space (S).

[0079] Additionally, the substrate support member (500) may be equipped with a lift pin (not shown) for supporting the substrate during substrate loading or unloading.

[0080] For example, the substrate support member (500) may include a support plate (510) that is positioned in a processing space (S) and supports a substrate (1) on its upper surface, and a support shaft (520) that has one end penetrating the process chamber (100) to support the lower surface of the support plate (510) and the other end connected to a driving unit (not shown) to move in an up-and-down direction.

[0081] The above support plate (510) is configured to be installed on the lower side of the processing space (S), for example, on the lower side of the gas injection unit (400) described later, so that the substrate (1) is placed thereon, and any configuration for supporting the substrate is possible.

[0082] At this time, the support plate (510) may be installed to be able to move up and down for introducing and discharging the substrate (1) through the gate (109) as shown in FIG. 1, and furthermore, a temperature control member such as a heater may be installed for temperature control, such as heating or cooling the substrate (1).

[0083] The above support shaft (520) may be configured such that one end penetrates the lower surface of the process chamber (100) to support the lower surface of the support plate (510), and the other end is connected to a driving unit (not shown) described later to move in the up and down direction.

[0084] That is, the support shaft (520) is connected to a driving unit (not shown) described later to position the substrate (1) introduced and removed through the gate (109) at an appropriate height, and furthermore, to adjust the process gap as the distance between the substrate support unit (500) and the gas injection unit (400), so that it can move in the up and down direction, and accordingly, the power generated through the driving unit can be transmitted to the support plate (510).

[0085] The chamber liner (200) is configured such that it is installed on the inner surface of the process chamber (100) to form a processing space (S) for processing a substrate inside, and has a discharge passage formed in communication with a discharge section (102) to discharge process gas injected into the processing space (S) to the outside, and various configurations are possible.

[0086] At this time, the chamber liner (200) is configured to be installed on the inner surface of the process chamber (100) to prevent the inner surface of the process chamber (100) from being exposed to the processing space (S), thereby preventing the extinction of the process gas in the form of radicals supplied into the processing space (S) due to the reaction with the process chamber (100) and preventing damage to the process chamber (100).

[0087] To this end, the chamber liner (200) may be composed of a material different from that of the process chamber (100), such as a material including at least one of quartz and ceramic.

[0088] Additionally, the chamber liner (200) may be configured to be installed in an internal space to define a processing space (S) and to exhaust the processing space (S).

[0089] To this end, the chamber liner section (200) may include an upper liner section (210) installed on the inner surface of the process chamber (100) and having a plurality of exhaust holes (212a) formed therein that are open to the processing space (S) for exhausting the processing space (S), and a lower liner section (220) installed on the lower side of the upper liner section (210) on the inner surface of the process chamber (100) and transmitting exhaust gas received from the upper liner section (210) to the exhaust liner section (300).

[0090] The upper liner portion (210) may be configured such that, as shown in FIGS. 1 and 3, it is installed on the inner surface of the process chamber (100) and has a plurality of exhaust holes (212a) formed therein that are open to the processing space (S) for exhausting the processing space (S).

[0091] That is, the upper liner portion (210) may be configured as an annular structure corresponding to the inner surface of the process chamber (100), installed on the upper side of the inner surface of the chamber body (110), and having a plurality of exhaust holes (212a) formed for exhausting the processing space (S).

[0092] The upper liner portion (210) may have an annular first exhaust passage (S1) formed inside, and may transmit gas from the processing space (S) through the first exhaust passage (S1) to the lower liner portion (220).

[0093] At this time, the first exhaust passage (S1) may be formed separately inside the upper liner portion (210), and as another example, the first exhaust passage (S1) may be formed together with the upper surface of the lower liner portion (220) by being located on the lower liner portion (220) while the lower part of the upper liner portion (210) is open.

[0094] More specifically, the upper liner portion (210) is formed with a hollow to form part of the processing space (S) as shown in FIGS. 1 and 2, and the lower surface is open to form an annular first exhaust passage (S1) inside together with the upper surface of the lower liner portion (220).

[0095] At this time, the upper liner portion (210) may include an upper liner (211) that forms a first exhaust passage (S1) with an upper surface and a lower surface open inside, and a liner covering portion (212) that is installed to cover the upper surface of the upper liner (211) and has a plurality of exhaust holes (212a) formed therein.

[0096] That is, the upper liner portion (210) may have a plurality of exhaust holes (212a) formed on the open upper surface of the upper liner (211), in which a first exhaust passage (S1) is formed inside while the upper and lower surfaces are open, so that a plurality of exhaust holes (212a) may be formed along the circumferential direction at the upper end, and the lower liner portion (220) may have a first exhaust passage (S1) formed together with the upper surface of the lower liner portion (220) as the lower end is open.

[0097] In this case, the upper liner portion (210) may have a plurality of exhaust holes (212a) formed on its upper surface, and as shown in FIG. 2, an extension portion (211a) may be additionally formed extending upward from the edge of the upper liner (211) to cover the inner surface of the chamber body (110) above the exhaust holes (212a).

[0098] Additionally, the upper liner portion (210) may include an upper liner (214) installed on the bottom surface of the upper lead (120) from the edge of the gas injection portion (400) to prevent exposure of the bottom surface of the upper lead (120).

[0099] Thus, the upper liner (214) can protect the bottom surface of the upper lid (120) by forming a space for introducing exhaust gas together with the liner covering portion (212) and the extension portion (211a).

[0100] At this time, the upper liner (214) and the extension part (211a) may be configured to be connected as a single structure, or as another example, they may be configured to be joined to each other as separate members.

[0101] Meanwhile, according to the above-described embodiment, the upper liner portion (210) is described as having a plurality of exhaust holes (212a) formed along the circumferential direction on the upper surface, and gas from the processing space (S) flows into the first exhaust passage (S1) through the exhaust holes (212a); however, it is not limited thereto, and it is also obvious that the plurality of exhaust holes (212a) of the upper liner portion (210) may be formed on the inner surface.

[0102] In addition, the upper liner portion (210) is an area exposed to process gas and exhaust gas, and in order to prevent corrosion and the resulting contamination of the processing space (S) and the effect on the substrate being processed, it may be formed of at least one material among quartz and ceramic.

[0103] The lower liner section (220) may be installed on the lower side of the upper liner section (210) within the inner surface of the process chamber (100) and configured to transmit exhaust gas received from the upper liner section (210) to the exhaust liner section (300).

[0104] That is, the lower liner section (220) is installed below the upper liner section (210) to prevent exposure to the processing space (S) on the inner surface of the chamber body (110) and is configured to define the processing space (S), while simultaneously being able to transfer the gas received from the upper liner section (210) to the exhaust liner section (300).

[0105] To this end, the lower liner portion (220) may have a hollow formed to form part of the processing space (S), and an annular second exhaust passage (S2) communicating with the first exhaust passage (S1) may be formed inside.

[0106] That is, the lower liner portion (220) is configured as an annular shape in which a second exhaust passage (S2) is formed along the circumference inside, and the upper liner portion (210) can be supported and positioned on the upper surface.

[0107] In addition, with the second exhaust passage (S2) formed inside, a plurality of baffle holes (221) are formed on the upper surface so that the first exhaust passage (S1) and the second exhaust passage (S2) communicate with each other and are exposed to the first exhaust passage (S1), thereby allowing gas to be uniformly exhausted from the first exhaust passage (S1) to be delivered.

[0108] In particular, the upper liner portion (210) and the lower liner portion (220) are each provided with a plurality of exhaust holes (212a) and baffle holes (221) formed along the circumferential direction, so that uniform exhaust can be performed within the processing space (S), and accordingly, the airflow within the processing space (S) is maintained uniformly, thereby inducing uniform injection of the process gas injected and supplied through the gas injection portion (400).

[0109] Additionally, the lower liner portion (220) may have a communication hole (222) formed on its side to communicate with the exhaust liner portion (300) that is inserted into the discharge portion (102) and to be connected to the connecting liner portion (600) described later that is installed in the through hole (103).

[0110] That is, the lower liner portion (220) may have a communication hole (222) formed on its outer surface to allow the exhaust liner portion (300) to communicate with the second exhaust passage (S2) and the exhaust passage (S3) so that they communicate with each other.

[0111] In addition, the lower liner portion (220) is further formed with a through hole (223) formed at a position corresponding to the gate (109) to enable the introduction and removal of the substrate (1), and as the gate (109) and the through hole (223) are formed aligned with each other, the substrate (1) can be introduced and removed into the processing space (S) without interference.

[0112] Additionally, the lower liner portion (220) is positioned below the upper liner portion (210) where there is minimal exposure to process gas and exhaust gas, and may be made of a material such as aluminum, which is the same material as the process chamber (100), and accordingly may be made of a material different from that of the upper liner portion (210).

[0113] The exhaust liner section (300) is installed so as to be detachably inserted into the discharge section (102) from the outer surface of the process chamber (100), and is configured to form an exhaust passage (S3) for exhausting exhaust gas transmitted through the first exhaust hole (101) by being connected to the chamber liner section (200), and various configurations are possible.

[0114] That is, the exhaust liner section (300) is detachably inserted and installed in the discharge section (102) and is configured to communicate with the chamber liner section (200), thereby forming an exhaust passage (S3) for exhausting the exhaust gas delivered through the chamber liner section (200) through the first exhaust hole (101).

[0115] To this end, the exhaust liner portion (300) has an exhaust passage (S3) formed inside and is detachably inserted into the discharge portion (102) so as to connect the first exhaust hole (101) and the second exhaust passage (S2) through the exhaust passage (S3).

[0116] Meanwhile, as illustrated in FIG. 4 and described above, the exhaust liner part (300) needs to be installed so that the through hole (103) and the first exhaust hole (101) are connected to each other as the through hole (103) is formed on the side facing the gate (109) and the first exhaust hole (101) is formed on the front side.

[0117] To this end, the exhaust liner portion (300) may include a linear exhaust liner (310) formed outside the through hole (103) on a planar surface as shown in FIGS. 3 and 5, and a curved exhaust liner (320) formed in a curve from the end of the linear exhaust liner (310) on a planar surface toward the first exhaust hole (101).

[0118] The above linear exhaust liner (310) may be provided on the outside of the through hole (103) on a flat surface, with a first exhaust liner through hole (301) formed therein, which is connected to the connecting liner part (600) described later and communicates with the second exhaust passage (S2).

[0119] The above curved exhaust liner (320) may be provided to extend from the linear exhaust liner (310), with a second exhaust liner through hole (302) formed in communication with the first exhaust hole (101).

[0120] Additionally, the curved exhaust liner (320) may have a third exhaust liner through hole (303) additionally formed at a corresponding position to communicate with the second exhaust hole (104).

[0121] Meanwhile, the exhaust liner section (300) may additionally include a sealing member (330) provided between the cover section (130) installed to cover the discharge section (102) on the upper side to seal the inside of the exhaust passage (S3), or between the linear exhaust liner (310) and the curved exhaust liner (320).

[0122] That is, the sealing member (330) can be provided between the main body and the cover when the linear exhaust liner (310) and the curved exhaust liner (320) each have individual covers, thereby sealing the exhaust passage (S3) into a sealed space.

[0123] The first exhaust liner penetration hole (301) may be formed at a position corresponding to the connecting liner part (600) to communicate with the connecting liner part (600), and more specifically, may be formed by penetrating the corresponding side of the linear exhaust liner (310).

[0124] Additionally, the second exhaust liner through hole (302) may be formed at a position corresponding to the first exhaust hole (101) so that the first exhaust hole (101) and the exhaust passage (S3) are in communication, and more specifically, it may be formed by penetrating the corresponding side of the curved exhaust liner (320), and the third exhaust liner through hole (303) may also be formed on the corresponding lower surface of the curved exhaust liner (320) corresponding to the position of the second exhaust hole (104).

[0125] At this time, the third exhaust liner penetration hole (303) can be applied as a simply penetrating hole structure, but it is also obvious that it can be applied in the form of a port.

[0126] Meanwhile, the aforementioned exhaust liner (300) may also be installed to prevent the exhaust passage (S3) from being exposed on the inner surface of the chamber body (110) in order to prevent damage to the process chamber (100) through exhaust gas, and may be made of a metal material, for example, aluminum, which is the same material as the process chamber (100).

[0127] Additionally, the exhaust liner (300) may be fastened to the chamber body (110) through a fastening means, but as another example, it may be configured to be easily detachable by simply being inserted into the discharge part (102) without separate fastening.

[0128] To this end, the exhaust liner section (300) may be applied as a combination of multiple members, such as the aforementioned linear exhaust liner (310) and curved exhaust liner (320).

[0129] The above connecting liner (600) may be configured such that it is installed to correspond to the inner surface of the through hole (103), with one end connected to the communication hole (222) and the other end connected to the exhaust liner (300).

[0130] That is, the above-mentioned connecting liner (600) may be configured to be installed within the through hole (103) as shown in FIG. 1 to prevent exposure of the chamber body (110) to exhaust gas in the through hole (103).

[0131] To this end, the connecting liner portion (600) may be installed on the inner surface of the through hole (103) with both ends open and corresponding to the shape of the through hole (103), and one end may be connected to the first exhaust liner through hole (301) and the other end may be connected to the communication hole (222) of the lower liner portion (220).

[0132] The lower liner (700) is configured to cover the inner surface and bottom surface of the process chamber (100) at the lower side of the lower liner section (220), and various configurations are possible.

[0133] The lower liner (700) may be configured to cover the lower area of ​​the lower liner section (220), that is, the lower part of the inner surface of the process chamber (100) and the bottom surface, as shown in FIG. 2, as the inner surface of the process chamber (100) that is not covered by the chamber liner section (200).

[0134] At this time, the lower liner (700) may be formed of aluminum metal, which is the same material as the lower liner part (220) described above, and may be provided with a first lower liner (710) that supports the lower liner part (220) at the bottom of the lower liner part (220) and covers the inner surface of the chamber body (110), and a second lower liner (720) that is installed to cover the bottom surface of the chamber body (110) at the bottom of the first lower liner (710).

[0135] Meanwhile, the first lower liner (710), the lower liner section (220), and the upper liner section (210) are formed to form the same plane, thereby ensuring that the inner surface of the processing space (S) is uniform, and accordingly, a stable airflow of various process gases can be induced.

[0136]

[0137] The foregoing merely describes some preferred embodiments that can be implemented by the present invention. As is well known, the scope of the present invention should not be interpreted as being limited to the above embodiments, and all technical concepts that share the fundamental principles with the technical concept of the present invention described above shall be considered to be included within the scope of the present invention.

Claims

1. A process chamber (100) having an internal space, a first exhaust hole (101) connected to a vacuum pump on the side, and a discharge section (102) connected to a through hole (103) formed on the inner side of the internal space to communicate the internal space and the first exhaust hole (101); A chamber liner (200) installed on the inner surface of the process chamber (100) to form a processing space (S) for processing a substrate inside, and having a discharge passage formed in communication with the discharge section (102) to discharge process gas injected into the processing space (S) to the outside; A substrate processing device characterized by including an exhaust liner part (300) that is detachably installed on the inner surface of the discharge part (102) and forms an exhaust passage (S3) for exhausting exhaust gas delivered through the discharge passage through the first exhaust hole (101).

2. In Claim 1, The above process chamber (100) is, A substrate processing device characterized by additionally including a second exhaust hole (104) having a smaller diameter than the first exhaust hole (101), which is formed on the upper or lower surface of the discharge section (102) to communicate with the exhaust passage (S3) and connected to an external vacuum pump.

3. In Claim 1, The above process chamber (100) is, A substrate processing device characterized by having a gate (109) formed on a side opposite to the through hole (103) formed on the inner side for introducing and removing a substrate (1).

4. In Claim 1, The above chamber liner part (200) is, A substrate processing device characterized by comprising: an upper liner portion (210) installed on the inner surface of the process chamber (100) and having a plurality of exhaust holes (212a) formed therein that are open to the processing space (S) for exhausting the processing space (S); and a lower liner portion (220) installed on the lower side of the upper liner portion (210) on the inner surface of the process chamber (100) and transmitting exhaust gas received from the upper liner portion (210) to the exhaust liner portion (300).

5. In Claim 4, The upper liner portion (210) above is, A substrate processing device characterized by having a hollow formed to form part of the processing space (S), and a lower surface open to form an annular first exhaust passage (S1) inside together with the upper surface of the lower liner part (220).

6. In Claim 5, The upper liner portion (210) above is, A substrate processing device characterized by including an upper liner (211) forming a first exhaust passage (S1) with an upper and lower surface open inside, and a liner covering part (212) installed to cover the upper surface of the upper liner (211) and having a plurality of exhaust holes (212a) formed therein.

7. In Claim 4, The upper liner portion (210) above is, A substrate processing device characterized by having a plurality of exhaust holes (212a) formed along the perimeter of the inner surface facing the processing space (S).

8. In Claim 5, The above lower liner portion (220) is, A substrate processing apparatus characterized by having a hollow formed to form a part of the processing space (S), and an annular second exhaust passage (S2) formed inside that communicates between the first exhaust passage (S1) and the third exhaust passage (S3).

9. In Claim 8, The above lower liner portion (220) is, A substrate processing device characterized by having a plurality of baffle holes (221) formed on the upper surface to communicate the first exhaust passage (S1) and the second exhaust passage (S2), and a communication hole (222) formed on the outer surface to communicate the exhaust liner part (300) so that the second exhaust passage (S2) and the exhaust passage (S3) communicate with each other.

10. In Claim 9, A substrate processing device characterized by additionally including a connecting liner (600) that is installed to correspond to the inner surface of the through hole (103), with one end connected to the communication hole (222) and the other end connected to the exhaust liner (300).

11. In Claim 10, The exhaust liner section (300) above is, A substrate processing device characterized by including a first exhaust liner through-hole (301) formed at a position corresponding to the connection liner part (600) to communicate with the connection liner part (600), and a second exhaust liner through-hole (302) formed at a position corresponding to the first exhaust hole (101) to communicate with the first exhaust hole (101).

12. In Claim 1, The exhaust liner section (300) above is, A substrate processing device characterized by including a linear exhaust liner (310) provided on the outside of the through hole (103) on a flat surface, and a curved exhaust liner (320) provided in a curve from the end of the linear exhaust liner (310) on a flat surface toward the first exhaust hole (101).

13. In Claim 4, A substrate processing device characterized by additionally including a lower liner (700) installed to cover the inner surface and bottom surface of the process chamber (100) at the lower side of the lower liner section (220).

14. In Claim 4, The upper liner portion (210) above is, It includes at least one material among ceramic and quartz, The above lower liner portion (220) is, A substrate processing device characterized by being formed of a metal material.

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