Semiconductor device manufacturing equipment and semiconductor device manufacturing method

Abstract

A semiconductor device manufacturing method is provided. The method comprises: increasing the temperature in a process chamber in which a substrate is disposed; forming a deposition film on the substrate after the temperature in the process chamber reaches or exceeds a predetermined value; and decreasing the temperature in the process chamber after the deposition film is formed, wherein the forming of the deposition film includes: supplying a first fluid and a second fluid into the process chamber at a first pressure; and supplying a third fluid into the process chamber at a second pressure after the first fluid and the second fluid are supplied, wherein the first fluid includes a metal element, each of the second fluid and the third fluid includes a chalcogen element, and the second pressure is higher than the first pressure.

Description

Semiconductor device manufacturing equipment and semiconductor device manufacturing method

[0001] The present invention relates to semiconductor device manufacturing equipment and a semiconductor device manufacturing method, and more specifically, to semiconductor device manufacturing equipment and a semiconductor device manufacturing method capable of preventing or healing defects in a deposited film formed on a substrate.

[0002] Semiconductor devices can be manufactured through various processes. For example, semiconductor devices can be manufactured through photolithography, etching, and deposition processes on wafers such as silicon. Various fluids may be used in these processes. For example, two or more fluids may be used to form a deposited film on a substrate in the deposition process. The deposition process may be performed under a substantial vacuum environment.

[0003] The problem that the present invention aims to solve is to provide semiconductor device manufacturing equipment and a semiconductor device manufacturing method capable of healing defects that occur during the formation of a deposited film on a substrate.

[0004] The problem that the present invention aims to solve is to provide semiconductor device manufacturing equipment and a semiconductor device manufacturing method capable of healing defects occurring on a deposited film.

[0005] The problem that the present invention aims to solve is to provide semiconductor device manufacturing equipment and a semiconductor device manufacturing method capable of forming a defect-free deposition film.

[0006] The problems that the present invention aims to solve are not limited to those mentioned above, and other unmentioned problems will be clearly understood by those skilled in the art from the description below.

[0007] To achieve the above-mentioned problem, a method for manufacturing a semiconductor device according to one embodiment of the present invention comprises: raising the temperature in a process chamber in which a substrate is placed; forming a deposited film on the substrate after the temperature in the process chamber has risen above a certain value; and lowering the temperature in the process chamber after the deposited film has been formed; wherein forming the deposited film comprises: supplying a first fluid and a second fluid into the process chamber at a first pressure; and supplying a third fluid into the process chamber at a second pressure after supplying the first fluid and the second fluid, wherein the first fluid comprises a metal element, and each of the second fluid and the third fluid comprises a chalcogen element, and the second pressure may be higher than the first pressure.

[0008] To achieve the above-mentioned problem, a method for manufacturing a semiconductor device according to one embodiment of the present invention comprises: loading a substrate onto a stage in a process chamber; processing the substrate disposed on the stage; and unloading the substrate from the process chamber; wherein processing the substrate includes forming a deposition film on the substrate, and forming the deposition film includes: growing the deposition film on the substrate; and healing defects in the deposition film; wherein growing the deposition film includes supplying a first material and a second material into the process chamber, and healing defects in the deposition film includes supplying a third material into the process chamber, wherein in healing defects in the deposition film, the first material may not be supplied into the process chamber.

[0009] To achieve the above-mentioned problem, a semiconductor device manufacturing equipment according to one embodiment of the present invention may include: a process chamber providing a process space; a stage located within the process chamber; a first fluid supply device connected to the process space and supplying a first fluid to the process space; and an activation device connected to the process space to activate the fluid supplied to the process space and supplying the activated fluid to the process space at a pressure greater than or equal to atmospheric pressure.

[0010] Specific details of other embodiments are included in the detailed description and drawings.

[0011] According to the semiconductor device manufacturing equipment and semiconductor device manufacturing method of the present invention, defects occurring during the formation of a deposited film on a substrate can be healed.

[0012] According to the semiconductor device manufacturing equipment and semiconductor device manufacturing method of the present invention, defects occurring on a deposited film can be healed.

[0013] According to the semiconductor device manufacturing equipment and semiconductor device manufacturing method of the present invention, a defect-free deposition film can be formed.

[0014] The effects of the present invention are not limited to those mentioned above, and other unmentioned effects will be clearly understood by those skilled in the art from the description below.

[0015] FIG. 1 is a cross-sectional view showing semiconductor device manufacturing equipment according to embodiments of the present invention.

[0016] FIG. 2 is a flowchart illustrating a method for manufacturing a semiconductor device according to embodiments of the present invention.

[0017] FIG. 3 is a flowchart illustrating a substrate processing method among the semiconductor device manufacturing methods according to embodiments of the present invention.

[0018] FIG. 4 is a flowchart illustrating a method for forming a deposited film among the semiconductor device manufacturing methods according to embodiments of the present invention.

[0019] Figures 5 and 6 are cross-sectional views showing a part of a semiconductor device manufacturing method according to the flowchart of Figure 2.

[0020] Figure 7 shows graphs illustrating a substrate processing method according to the flowchart of Figure 3.

[0021] Figures 8 and 9 are cross-sectional views sequentially illustrating a method for forming a deposited film according to the flowchart of Figure 4.

[0022] Hereinafter, embodiments of the present invention will be described with reference to the attached drawings. Throughout the entire specification, the same reference numerals may refer to the same components.

[0023]

[0024] FIG. 1 is a cross-sectional view showing semiconductor device manufacturing equipment according to embodiments of the present invention.

[0025] Referring to FIG. 1, semiconductor device manufacturing equipment may be provided. The semiconductor device manufacturing equipment may be equipment that performs at least a part of the process of manufacturing a semiconductor device. For example, the semiconductor device manufacturing equipment may be equipment that performs a deposition process on a substrate. That is, the semiconductor device manufacturing equipment may be substrate deposition equipment that forms a deposited film on a substrate. More specifically, the semiconductor device manufacturing equipment may be equipment that forms a deposited film containing a chalcogen compound on a substrate. In this case, a two-dimensional semiconductor device may be manufactured by the semiconductor device manufacturing equipment. However, it is not limited thereto, and the semiconductor device manufacturing equipment according to embodiments of the present invention may be equipment that forms other types of deposited films. The term "substrate" as used herein may mean a silicon (Si) wafer, but is not limited thereto. The semiconductor device manufacturing equipment may include a process chamber (1), a stage (3), a gas distributor (9), a first fluid supply device (4), a second fluid supply device (8), an activation device (6), a carrier gas supply device (2), a power supply device (5), and a vacuum pump (7).

[0026] The process chamber (1) can provide a process space (1h). By the process chamber (1), the process space (1h) can be separated from the outside. A process on a substrate can be performed within the process space (1h). The process space (1h) may have a cylindrical shape, but is not limited thereto.

[0027] A stage (3) may be located within a process chamber (1). With a substrate placed on the stage (3), a process on the substrate may be performed. As illustrated in FIG. 1, a single stage (3) may be located within the process chamber (1). That is, the semiconductor device manufacturing equipment according to embodiments of the present invention may be a single-wafer type equipment. However, it is not limited thereto, and the semiconductor device manufacturing equipment may be a batch type equipment that performs a process on multiple substrates at once. The stage (3) may fix the substrate. To this end, the stage (3) may include an electrostatic chuck (ESC), a vacuum chuck, or a clamping chuck, but is not limited thereto. The stage (3) may be connected to a power source (5).

[0028] The gas distributor (9) may be located within the process chamber (1). The gas distributor (9) may be spaced upward from the stage (3). Fluid may be uniformly supplied to a substrate fixed on the stage (3) by the gas distributor (9). The gas distributor (9) may include, for example, a shower head as shown in FIG. 1. However, it is not limited thereto, and the gas distributor (9) may include other structural configurations capable of uniformly supplying gas onto the substrate.

[0029] The first fluid supply device (4) may be connected to the process space (1h). The first fluid supply device (4) may supply a first fluid to the process space (1h). Although not illustrated, for this purpose, the first fluid supply device (4) may include a first fluid storage tank, a supply line, and a compressor, etc. The first fluid may include, for example, a metal element. More specifically, the first fluid may include molybdenum (Mo) and / or tungsten (W), but is not limited thereto. At least a portion of the first fluid supplied to the process space (1h) may be deposited on a substrate. Details regarding this will be described later.

[0030] The second fluid supply device (8) may be connected to the process space (1h). The second fluid supply device (8) may supply a second fluid and / or a third fluid to the process space (1h). Although not illustrated, for this purpose, the second fluid supply device (8) may include a second fluid storage tank, a supply line, and a compressor, etc. Each of the second fluid and the third fluid may contain a chalcogen element. For example, each of the second fluid and the third fluid may contain sulfur (S) and / or selenium (Se). More specifically, each of the second fluid and the third fluid may contain a chalcogen compound. The chalcogen compound may include, but is not limited to, hydrogen sulfide (H2S), carbonyl sulfide (COS), hydrogen disulfide (H2S2), hydrogen selenide (H2Se), and / or carbonyl selenide (COSe). At least a portion of the second fluid and / or third fluid supplied to the process space (1h) may be deposited on the substrate. If the first fluid contains molybdenum (Mo) and each of the second fluid and the third fluid contains sulfur (S), a MoS2 deposited film may be formed on the substrate. If the first fluid contains tungsten (W) and each of the second fluid and the third fluid contains selenium (Se), a WSe2 deposited film may be formed on the substrate. However, it is not limited to these. Details regarding this will be described later.

[0031] The activation device (6) can be connected to the process space (1h). The activation device (6) can be connected to the second fluid supply device (8). That is, the second fluid supply device (8) can be connected to the process space (1h) through the activation device (6). Thus, the second fluid and / or third fluid supplied from the second fluid supply device (8) can be introduced into the process space (1h) through the activation device (6). The activation device (6) can activate the fluid supplied to the process space (1h). For example, the activation device (6) can activate the second fluid and / or third fluid supplied from the second fluid supply device (8) into a radical form and / or a reactive form. For example, if the second fluid and / or third fluid supplied from the second fluid supply device (8) contains chalcogen elements, a chalcogen compound in a radical form can be supplied to the process space (1h). Accordingly, the second fluid and / or third fluid supplied to the process space (1h) can be easily deposited on the substrate. To this end, the activation device (6) may include various devices capable of activating the fluid. For example, the activation device (6) may include, but is not limited to, a lamp, a hot wire, a resistive heater, an RF heater, an ICP plasma generating device, a laser generating device, a UV lamp, or a fluid-controlled heat exchanger. The activation device (6) may supply the fluid to the process space (1h) at a high pressure. For example, the activation device (6) may supply the activated fluid to the process space (1h) at a pressure greater than atmospheric pressure. More specifically, the activation device (6) may supply the activated fluid to the process space (1h) at a pressure of 0.1 atm to 5 atm. To this end, the activation device (6) may include equipment capable of supplying the fluid at a high pressure. Additionally, the process chamber (1) may include a structure capable of withstanding high pressure greater than atmospheric pressure.Detailed information regarding this will be provided later.

[0032] Although the second fluid supply device (8) has been illustrated and described above as being connected to the process space (1h) only through the activation device (6), it is not limited thereto. That is, the second fluid supply device (8) may be directly connected to the process space (1h) without passing through the activation device (6). In this case, the second fluid and / or the third fluid may be supplied to the process space (1h) without passing through the activation device (6). However, for convenience, the second fluid supply device (8) will be described below based on being connected to the process space (1h) through the activation device (6).

[0033] The carrier gas supply device (2) can be connected to the process space (1h). The carrier gas supply device (2) can supply a carrier gas to the process space (1h). The carrier gas may include, but is not limited to, argon (Ar), helium (He), and / or nitrogen (N2) gas. Details regarding the carrier gas will be described later.

[0034] The power source (5) can be connected to the stage (3). The power source (5) can supply RF power to the stage (3), but is not limited thereto.

[0035] A vacuum pump (7) can be connected to a process space (1h). By the vacuum pump (7), the process space (1h) can be maintained in a substantial vacuum state. That is, by the vacuum pump (7), the process on the substrate can be carried out in a substantial vacuum state.

[0036]

[0037] FIG. 2 is a flowchart illustrating a method for manufacturing a semiconductor device according to embodiments of the present invention.

[0038] Referring to FIG. 2, a semiconductor device manufacturing method (SS) may be provided. The semiconductor device manufacturing method (SS) may be a method of manufacturing a semiconductor device using semiconductor device manufacturing equipment described with reference to FIG. 1. That is, a deposited film may be formed on a substrate by the semiconductor device manufacturing method (SS). The semiconductor device manufacturing method (SS) may include loading a substrate (S1), processing a substrate (S2), and unloading a substrate (S3). Detailed information regarding the semiconductor device manufacturing method (SS) will be described later.

[0039]

[0040] FIG. 3 is a flowchart illustrating a substrate processing method among the semiconductor device manufacturing methods according to embodiments of the present invention.

[0041] Referring to FIG. 3, a substrate processing method (S2) may be provided. The substrate processing method (S2) of FIG. 3 may be a specific method for performing the processing of a substrate (S2) described with reference to FIG. 2. The substrate processing method (S2) may include raising the temperature inside the process chamber (S21), forming a deposited film on the substrate (S22), and lowering the temperature inside the process chamber (S23). Detailed information regarding the substrate processing method (S2) will be described later.

[0042]

[0043] FIG. 4 is a flowchart illustrating a method for forming a deposited film among the semiconductor device manufacturing methods according to embodiments of the present invention.

[0044] Referring to FIG. 4, a method for forming a deposition film (S22) may be provided. The method for forming a deposition film (S22) may be a specific method for performing the formation of a deposition film (S22) on a substrate described with reference to FIG. 3. The method for forming a deposition film (S22) may include supplying a first fluid and a second fluid (S221) and supplying a third fluid (S222).

[0045] For example, in supplying the first fluid and the second fluid (S221), the first fluid and the second fluid may be supplied onto the substrate to grow a deposited film on the substrate. That is, supplying the first fluid and the second fluid (S221) may form a deposited film on the substrate. However, it is not limited thereto. A detailed explanation thereof will be provided later.

[0046] For example, in supplying the third fluid (S222), defects in the deposited film formed on the substrate may be healed. That is, supplying the third fluid (S222) may heal defects in the deposited film. However, it is not limited thereto. A detailed explanation thereof will be provided later.

[0047] Supplying the first fluid and the second fluid (S221) and supplying the third fluid (S222) may be performed sequentially two or more times. A detailed explanation thereof will be provided later.

[0048] Hereinafter, a method for manufacturing a semiconductor device according to the flowchart of FIG. 2 will be described in detail with reference to FIG. 5 to 9.

[0049]

[0050] Figures 5 and 6 are cross-sectional views showing a part of a semiconductor device manufacturing method according to the flowchart of Figure 2.

[0051] Referring to FIGS. 5, 6 and FIGS. 2, loading a substrate (S1) may include placing a substrate (W) on a stage (3). The substrate (W) may be fixed on the stage (3).

[0052]

[0053] Figure 7 is a graph showing a substrate processing method according to the flowchart of Figure 3, and Figures 8 and 9 are cross-sectional views showing a deposition film formation method sequentially according to the flowchart of Figure 4.

[0054] Referring to FIG. 7 and FIG. 3, raising the temperature inside the process chamber (S21) may include raising the temperature inside the process chamber (1) to a first temperature. In raising the temperature inside the process chamber (S21), the heating rate may be about 1°C / s to about 100°C / s, but is not limited thereto.

[0055] Referring to FIGS. 7, 8, and 4, supplying the first fluid and the second fluid (S221) may be performed after the temperature inside the process chamber (1) has risen above a certain value. Supplying the first fluid and the second fluid (S221) may be performed at a second temperature. The second temperature may be lower than the first temperature. The second temperature may be, for example, about 100°C to about 800°C, but is not limited thereto. The second temperature may not be constant. For example, the temperature inside the process chamber may rise or fall while supplying the first fluid and the second fluid (S221). That is, raising the temperature inside the process chamber (S21) and supplying the first fluid and the second fluid (S221) may overlap at least partially in time. Supplying the first fluid and the second fluid (S221) may include supplying the first fluid (F1) and the second fluid (F2) into the process chamber (1) at a first pressure. The first pressure may be, for example, lower than atmospheric pressure. More specifically, the first pressure may be about 0.01 atm to about 0.5 atm. In the flow rate graph of FIG. 7, the dotted line may represent the flow rate of the first fluid. In the flow rate graph of FIG. 7, the solid line may represent the flow rate of the second fluid. The first fluid (F1) supplied from the first fluid supply device (4) may contain a first substance. The first substance may contain, for example, a metal element. More specifically, the first substance may contain molybdenum (Mo) and / or tungsten (W). The second fluid (F2) supplied from the second fluid supply device (8) may contain a second substance. For example, the second substance may contain a chalcogen element. More specifically, the second material may include sulfur (S) and / or selenium (Se). Accordingly, a deposited film may be formed on the substrate (W). That is, supplying the first fluid and the second fluid (S221) may grow a deposited film on the substrate (W).In FIG. 8, the second fluid (F2) supplied from the second fluid supply device (8) is shown flowing into the process chamber (1) via the activation device (6), but this is not limited thereto. That is, the second fluid (F2) supplied from the second fluid supply device (8) may flow directly into the process space (1h) without passing through the activation device (6). In this case, the second fluid (F2) flowing into the process space (1h) may be in an unactivated state.

[0056] Supplying the first fluid and the second fluid (S221) may further include supplying a carrier gas (CG) into the process chamber (1). The carrier gas (CG) supplied from the carrier gas supply device (2) may be introduced into the process space (1h) together with the first fluid (F1) and / or the second fluid (F2). In the flow rate graph of FIG. 7, the dotted line may represent the flow rate of the carrier gas.

[0057] Although the first fluid and the second fluid are supplied simultaneously as described above, this is not limited thereto. That is, the first fluid and the second fluid may be supplied sequentially. Additionally, as in an ALD process, a purge gas may be additionally supplied between the supply of the first fluid and the supply of the second fluid. In other words, in the supply of the first fluid and the second fluid (S221), the supply of the first fluid, the supply of the purge gas, and the supply of the second fluid may be performed sequentially.

[0058] Referring to FIGS. 7, 9 and 4, supplying a third fluid (S222) may be performed after supplying a first fluid and a second fluid (S221). Supplying the third fluid (S222) may include supplying the third fluid (F3) into the process chamber (1) at a second pressure. The second pressure may be higher than the first pressure. The second pressure may be, for example, higher than atmospheric pressure. Or, the second pressure may be, for example, about 0.1 atm to about 5 atm. The third fluid (F3) may contain a third material. For example, the third material may contain a chalcogen element. More specifically, the third material may contain sulfur (S) and / or selenium (Se). Defects in the deposited film formed on the substrate (W) may be healed by the third fluid (F3) supplied at high pressure into the process chamber (1). That is, supplying the third fluid (S222) may be for healing defects in the deposited film. Supplying the third fluid (S222) may further include activating the third material before supplying the third material into the process chamber (1). More specifically, the activation device (6) may activate the third material supplied from the second fluid supply device (8). Accordingly, the third material supplied into the process chamber (1) may be easily bonded to the deposited film on the substrate, thereby healing defects in the deposited film. In supplying the third fluid (S222), the first fluid (F1) may not be supplied into the process chamber (1). That is, in supplying the third fluid (S222), metal elements may not be supplied into the process chamber (1). Therefore, in supplying the third fluid (S222), chalcogen defects on the deposited film can be effectively healed.

[0059] Supplying the third fluid (S222) may include increasing the supply pressure of the third substance to the second pressure, maintaining the supply pressure of the third substance at the second pressure after the supply pressure of the third substance reaches the second pressure, and decreasing the supply pressure of the third substance. That is, in supplying the third fluid (S222), the pressure increase and pressure decrease may be performed slowly and sequentially.

[0060] Supplying the third fluid (S222) may further include supplying a carrier gas (CG) into the process chamber (1). The carrier gas (CG) supplied from the carrier gas supply device (2) may be introduced into the process space (1h) together with the third fluid (F3). However, this is not limited thereto, and as shown in the flow rate graph of FIG. 7 and FIG. 9, the carrier gas (CG) may not be supplied into the process chamber (1) during the supply of the third fluid (S222).

[0061] Although not explicitly stated, purge gas may be additionally supplied before and / or after supplying the third fluid (S222). For example, purge gas may be supplied after supplying the first and second fluids (S221) is performed and before supplying the third fluid (S222). Alternatively, purge gas may be supplied after supplying the third fluid (S222) is performed.

[0062] In the above description, supplying the first fluid and the second fluid (S221) and supplying the third fluid (S222) are all described based on the assumption that they are performed at a second temperature, but this is not limited thereto. That is, supplying the first fluid and the second fluid (S221) and supplying the third fluid (S222) may be performed at different temperatures. For example, supplying the first fluid and the second fluid (S221) may be performed at approximately 300°C to approximately 800°C, and supplying the third fluid (S222) may be performed at approximately 100°C to approximately 800°C.

[0063] As described above, supplying the first fluid and the second fluid (S221) and supplying the third fluid (S222) may be performed sequentially two or more times. For example, as shown in FIG. 7, supplying the first fluid and the second fluid (S221) and supplying the third fluid (S222) may be performed sequentially five times. However, this is not limited thereto, and supplying the first fluid and the second fluid (S221) and supplying the third fluid (S222) may be performed two to four times, or six or more times. Accordingly, defects in the deposited film formed on the substrate can be effectively healed. Alternatively, supplying the first fluid and the second fluid (S221) and supplying the third fluid (S222) may be performed only once each.

[0064] Referring to FIG. 7 and FIG. 3, lowering the temperature inside the process chamber (S23) may include lowering the temperature inside the process chamber (1) after the deposited film is formed. The temperature inside the process chamber (1) may be lowered to room temperature, but is not limited thereto. Lowering the temperature inside the process chamber (S23) may further include supplying a third fluid (F3) inside the process chamber (1). That is, the third fluid (F3) may be supplied inside the process chamber (1) even while the temperature inside the process chamber (1) is being lowered. Therefore, defects in the deposited film may be healed or additional defects in the deposited film may be prevented even while the temperature is being lowered.

[0065] According to the semiconductor device manufacturing equipment and semiconductor device manufacturing method according to exemplary embodiments of the present invention, defects in a deposited film formed on a substrate can be prevented and / or healed. For example, when depositing a chalcogen compound on a substrate, defects in the deposited film can be healed by additionally supplying a chalcogen compound that evaporates easily under vacuum conditions at high pressure. More specifically, a deposited film containing metal elements and chalcogen elements can be formed on a substrate by a first fluid and a second fluid. However, since chalcogen elements evaporate easily under vacuum conditions, defects may occur in the deposited film. According to the semiconductor device manufacturing equipment and semiconductor device manufacturing method according to exemplary embodiments of the present invention, defects in the deposited film can be healed by additionally supplying a third fluid at high pressure after supplying the first fluid and the second fluid. Accordingly, a semiconductor device having a deposited film with few or no defects can be manufactured.

[0066]

[0067] Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention may be implemented in other specific forms without changing its technical concept or essential features. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive.

Claims

1. Raising the temperature inside the process chamber where the substrate is placed; After the temperature inside the process chamber rises above a certain level, forming a deposited film on the substrate; and After the above-mentioned deposition film is formed, lowering the temperature inside the process chamber; comprising Forming the above-mentioned deposition film is: Supplying a first fluid and a second fluid into the process chamber at a first pressure; and After supplying the first fluid and the second fluid, supplying a third fluid into the process chamber at a second pressure; comprising, The first fluid above contains a metal element, and Each of the second fluid and the third fluid comprises a chalcogen element, wherein A method for manufacturing a semiconductor device in which the second pressure is higher than the first pressure.

2. In Paragraph 1, A method for manufacturing a semiconductor device in which the metal element comprises molybdenum (Mo) or tungsten (W).

3. In Paragraph 1, A method for manufacturing a semiconductor device in which the above chalcogen element includes sulfur (S) or selenium (Se).

4. In Paragraph 1, Each of the second fluid and the third fluid comprises a chalcogen compound, wherein The above chalcogen element exists in the above chalcogen compound, and A method for manufacturing a semiconductor device wherein the chalcogen compound comprises hydrogen sulfide (H2S), carbonyl sulfide (COS), hydrogen disulfide (H2S2), hydrogen selenide (H2Se), or carbonyl selenide (COSe).

5. In Paragraph 1, A method for manufacturing a semiconductor device in which the above-mentioned third fluid comprises a chalcogen compound in the form of a radical.

6. In Paragraph 1, A method for manufacturing a semiconductor device in which, when the third fluid is supplied into the process chamber, a metal element is not supplied to the process chamber.

7. In Paragraph 1, The first pressure is 0.01 atm to 0.5 atm, and A method for manufacturing a semiconductor device in which the second pressure is 0.1 atm to 5 atm.

8. In Paragraph 1, A method for manufacturing a semiconductor device in which, in forming the deposition film on the substrate, supplying the first fluid and the second fluid at the first pressure and supplying the third fluid at the second pressure are performed sequentially at least twice.

9. In Paragraph 1, In raising the temperature inside the process chamber, the temperature inside the process chamber rises to a first temperature, and Forming the deposited film on the substrate is performed at a second temperature, A method for manufacturing a semiconductor device in which the second temperature is 100℃ to 800℃.

10. In Paragraph 1, A method for manufacturing a semiconductor device, wherein lowering the temperature within the process chamber includes supplying the third fluid within the process chamber.

11. In Paragraph 9, Supplying the first fluid and the second fluid at the first pressure is performed at 300°C to 800°C, and A method for manufacturing a semiconductor device in which supplying the third fluid at the second pressure is performed at 100°C to 800°C.

12. Loading a substrate onto a stage inside a process chamber; Processing the substrate disposed on the above stage; and Unloading the substrate from the process chamber; comprising, Processing the above substrate includes forming a deposited film on the above substrate, and Forming the above-mentioned deposition film is: Growing the deposited film on the substrate; and Healing defects in the deposited film; including, Growing the above-mentioned deposition film includes supplying a first material and a second material into the process chamber, and Healing the defect of the above-deposited film includes supplying a third material into the process chamber, wherein A method for manufacturing a semiconductor device in which the first material is not supplied into the process chamber in healing the defect of the above-deposited film.

13. In Paragraph 12, In growing the above-mentioned deposition film, the first material and the second material are supplied at a first pressure, and In healing the defect of the above-deposited film, the third material is supplied at a second pressure, A method for manufacturing a semiconductor device in which the second pressure is greater than the first pressure.

14. In Paragraph 13, The above first pressure is lower than atmospheric pressure, and A method for manufacturing a semiconductor device in which the second pressure above is greater than atmospheric pressure.

15. In Paragraph 13, Healing the defects of the above-deposited film is: Raising the supply pressure of the third substance to the second pressure; After the supply pressure of the third substance reaches the second pressure, maintaining the supply pressure of the third substance at the second pressure; and A method for manufacturing a semiconductor device comprising reducing the supply pressure of the third material.

16. In Paragraph 12, The first material above comprises molybdenum (Mo) or tungsten (W), and A method for manufacturing a semiconductor device in which each of the second and third materials comprises sulfur (S) or selenium (Se).

17. In Paragraph 12, A method for manufacturing a semiconductor device, wherein supplying the third material into the process chamber at the second pressure further comprises activating the third material before supplying the third material into the process chamber.

18. Process chamber providing a process space; A stage located within the above process chamber; A first fluid supply device connected to the process space and supplying a first fluid to the process space; and Semiconductor device manufacturing equipment comprising: an activation device connected to the process space to activate the fluid supplied to the process space, and supplying the activated fluid to the process space at a pressure greater than atmospheric pressure.

19. In Paragraph 18, The above-mentioned activation device is semiconductor device manufacturing equipment comprising a lamp, a hot wire, a resistive heater, an RF heater, an ICP plasma generating device, a laser generating device, a UV lamp, or a fluid-controlled heat exchanger.

20. In Paragraph 18, It further includes a gas distributor located within the process chamber and spaced upward from the stage, The above stage is semiconductor device manufacturing equipment including an electrostatic chuck (ESC), a vacuum chuck, or a clamping chuck.

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