Plasma-resistant glass, component for inside of chamber for semiconductor manufacturing process, and manufacturing methods therefor

Abstract

The present invention relates to a plasma-resistant glass, a component for the inside of a chamber for semiconductor manufacturing process, and manufacturing methods therefor, the plasma-resistant glass being easily melted even if composed of a high amount of Si-based oxides, minimizing impurities generated during etching, and having increased etching resistance.

Description

Plasma-resistant glass, internal chamber components for semiconductor manufacturing processes, and methods for manufacturing the same

[0001] The present invention claims the benefit of the filing date of Korean Patent Application No. 10-2025-0006076 filed with the Korean Intellectual Property Office on January 15, 2025, and the benefit of the filing date of Korean Patent Application No. 10-2025-0130331 filed with the Korean Intellectual Property Office on September 12, 2025, the entire contents of which are incorporated into the present invention. The present invention relates to plasma-resistant glass, internal components for a chamber for a semiconductor manufacturing process, and methods for manufacturing the same.

[0002] Plasma etching processes are being applied in the manufacturing of semiconductors and / or displays. With the recent application of nano-processes, the difficulty of etching has increased, and oxide-based ceramics such as alumina (Al2O3), which possess corrosion resistance, are primarily used for internal components of process chambers exposed to high-density plasma environments.

[0003] When polycrystalline materials are exposed for extended periods to high-density plasma etching environments using fluorine-based gases, localized erosion leads to particle detachment, increasing the probability of contaminant particle generation. This causes defects in semiconductors and displays and negatively impacts production yield. Furthermore, oxide-based ceramic materials have suffered from poor workability due to their high melting temperatures.

[0004] Therefore, there is a need to develop technology that allows for a low melting temperature while preventing thermal shock damage to existing plasma-resistant glass, reducing the dielectric constant, and controlling viscosity to easily mold into desired shapes.

[0005] Meanwhile, quartz has long been used as the representative material for focus rings in etchers due to its low cost, appropriate dielectric constant, and suitable etching characteristics. However, as the plasma environment inside semiconductor chambers has recently become harsher, the replacement cycle of quartz has shortened due to rapid etching, leading to various attempts to replace it.

[0006] Recently, there have been many attempts to replace the focus ring material with amorphous glass. However, since SiO2, the primary material for glassing, possesses a strong network, it has not been easy to produce glass containing a high content of SiO2. Furthermore, metal-based materials such as Al and Ca, which are inevitably included for glassing, increase dielectric constants and pose problems of increased contamination due to gases generated during the etching process, thus requiring improvement.

[0007] Furthermore, glass containing a high amount of SiO2 generates some surface craters during plasma etching. These craters degrade the physical etching capability of the plasma process, posing a problem that necessitated improvement.

[0008] The present invention provides plasma-resistant glass with improved etching resistance and light transmittance while simultaneously improving contamination by including high content of Si-based oxide and Y-based oxide and controlling their content, a component for use inside a chamber for a semiconductor manufacturing process, and a method for manufacturing the same.

[0009] However, the problems that the present invention aims to solve are not limited to those mentioned above, and other unmentioned problems will be clearly understood by those skilled in the art from the description below.

[0010] One embodiment of the present invention provides a plasma-resistant glass comprising a Si-based oxide in an amount of 45 weight% or more and 84 weight% or less and a Y-based oxide in an amount of 4 weight% or more and 35 weight% or less.

[0011] According to one embodiment of the present invention, Al-based oxides, Ca-based oxides, and combinations thereof may be further included.

[0012] According to one embodiment of the present invention, the content of the Al-based oxide may be 3 weight% or more and 12 weight% or less.

[0013] According to one embodiment of the present invention, the content of the Ca-based oxide may be 6 weight% or more and 16 weight% or less.

[0014] According to one embodiment of the present invention, the Si-based oxide is SiO2, the Y-based oxide is Y2O3, the Al-based oxide is Al2O3, and the Ca-based oxide may be CaO.

[0015] According to one embodiment of the present invention, the plasma-resistant glass may have a light transmittance of 80% or more and 100% or less.

[0016] One embodiment of the present invention provides a component for the interior of a chamber for a semiconductor manufacturing process, which is made of the plasma-resistant glass.

[0017] According to one embodiment of the present invention, the internal chamber component for the semiconductor manufacturing process may be any one of a focus ring, an edge ring, a cover ring, a ring shower, an insulator, an EPD window, an electrode, a viewport, an inner shutter, an electrostatic chuck, a heater, a chamber liner, a shower head, a boat for CVD (Chemical Vapor Deposition), a wall liner, a shield, a cold pad, a source head, an outer liner, a deposition shield, an upper liner, an exhaust plate, and a mask frame.

[0018] One embodiment of the present invention provides a method for manufacturing plasma-resistant glass comprising: a step of melting a composition comprising 45 weight% or more and 84 weight% or less of a Si-based oxide and 4 weight% or more and 35 weight% or less of a Y-based oxide; and a step of cooling the melted composition.

[0019] According to one embodiment of the present invention, the composition may further include 3 weight% or more and 12 weight% or less of Al-based oxide and 6 weight% or more and 16 weight% or less of Ca-based oxide.

[0020] According to one embodiment of the present invention, the melting temperature of the step of melting the composition may be 1,500 ℃ or higher and 1,900 ℃ or lower.

[0021] One embodiment of the present invention provides a method for manufacturing a component for the interior of a chamber for a semiconductor manufacturing process, comprising: a step of melting the plasma-resistant glass; a step of injecting the molten plasma-resistant glass into a mold; and a step of annealing the injected plasma-resistant glass; wherein the melting temperature of the step of melting the plasma-resistant glass is 1,500 ℃ or higher and 1,900 ℃ or lower, and the temperature of the step of annealing is 400 ℃ or higher and 900 ℃ or lower.

[0022] A plasma-resistant glass according to one embodiment of the present invention can be easily melted even if it contains a high content of Si-based oxide and can have a dielectric constant within a specific range.

[0023] A plasma-resistant glass according to one embodiment of the present invention can minimize impurities generated during the etching process and can improve the etching efficiency of the plasma process by increasing etching resistance.

[0024] A component for an internal chamber for a semiconductor manufacturing process according to one embodiment of the present invention improves plasma resistance, extends the replacement cycle of the component, and can minimize impurities generated during the etching process.

[0025] A method for manufacturing plasma-resistant glass according to one embodiment of the present invention can easily manufacture plasma-resistant glass and prevent damage caused by thermal shock in a high-temperature atmosphere.

[0026] A method for manufacturing a component for use inside a chamber for a semiconductor manufacturing process according to one embodiment of the present invention can manufacture a component having various shapes, prevent damage caused by thermal shock in a high-temperature atmosphere, and easily manufacture the component.

[0027] FIG. 1 is a flowchart of a method for manufacturing plasma-resistant glass according to one embodiment of the present invention.

[0028] FIG. 2 is a flowchart of a method for manufacturing a component for inside a chamber for a semiconductor manufacturing process according to one embodiment of the present invention.

[0029] FIG. 3 is a photograph of plasma-resistant glass of Example 1 according to one embodiment of the present invention.

[0030] FIG. 4 is a photograph of plasma-resistant glass of Example 2 according to one embodiment of the present invention.

[0031] FIG. 5 is a photograph of plasma-resistant glass of Example 3 according to one embodiment of the present invention.

[0032] FIG. 6 is a photograph of plasma-resistant glass of Example 4 according to one embodiment of the present invention.

[0033] FIG. 7 is a photograph of plasma-resistant glass of Example 5 according to one embodiment of the present invention.

[0034] FIG. 8 is a photograph of plasma-resistant glass of Example 6 according to one embodiment of the present invention.

[0035] FIG. 9 is a photograph of plasma-resistant glass of Example 7 according to one embodiment of the present invention.

[0036] FIG. 10 is a photograph of plasma-resistant glass of Example 8 according to one embodiment of the present invention.

[0037] Figure 11 is a photograph of the plasma-resistant glass of Comparative Example 2.

[0038] Figure 12 is a photograph of the plasma-resistant glass of Comparative Example 3.

[0039] Figure 13 is a photograph of the plasma-resistant glass of Comparative Example 4.

[0040] Figure 14 is a photograph of the plasma-resistant glass of Comparative Example 5.

[0041] Figure 15 is a schematic diagram for performing Experimental Example 4.

[0042] Figure 16 is an SEM image of the wafer after plasma etching and particles around the sample of Comparative Example 1 and Example 8.

[0043] FIG. 17 is a graph showing the etching rate ratios of the reference example, comparative examples 2 to 4, example 4, and example 8 for quartz (reference example).

[0044] FIG. 18 is a magnified photograph of the surface of glass before and after plasma etching of the reference example, Example 4, and Example 8.

[0045] Throughout this specification, when a part is described as "comprising" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.

[0046] In this specification, "plasma resistance" may mean having high resistance to etching by plasma, and having a low etching rate by plasma.

[0047] The drawings attached to this specification illustrate preferred embodiments of the invention and explain the principles of the invention together with the description of the invention, but the scope of the invention is not limited thereto. Meanwhile, the shapes, sizes, scales, or proportions of elements in the drawings included in this specification may be exaggerated to emphasize clearer explanations.

[0048] The present specification will be described in more detail below.

[0049]

[0050] One embodiment of the present invention provides a plasma-resistant glass comprising a Si-based oxide in an amount of 45 weight% or more and 84 weight% or less and a Y-based oxide in an amount of 4 weight% or more and 35 weight% or less.

[0051]

[0052] A plasma-resistant glass according to one embodiment of the present invention can be easily melted even if it contains a high content of Si-based oxide, and can have a dielectric constant within a specific range. Furthermore, a plasma-resistant glass according to one embodiment of the present invention can minimize impurities generated during the etching process and can improve the etching efficiency of the plasma process by increasing etching resistance.

[0053] A plasma-resistant glass according to one embodiment of the present invention may contain a high content of Si-based oxide. By containing a high content of Si-based oxide, the plasma-resistant glass is advantageous for improving contamination and may have a dielectric constant within a specific range. Furthermore, the plasma-resistant glass improves light transmittance and enhances mechanical properties by increasing hardness, thereby improving durability in a plasma etching environment.

[0054] According to one embodiment of the present invention, the content of the Si-based oxide in the plasma-resistant glass is 45 wt% or more and 84 wt% or less. Specifically, the content of the Si-based oxide in the plasma-resistant glass may be 75 wt% or more. More specifically, the content of the Si-based oxide may be 49 wt% or more and 75 wt% or less, 53 wt% or more and 75 wt% or less, or 57 wt% or more and 72 wt% or less. When the content of the Si-based oxide is controlled to the range described above, an appropriate level of dielectric constant can be achieved, impurities generated during plasma etching can be minimized, and costs can be reduced.

[0055] According to one embodiment of the present invention, the plasma-resistant glass comprises the Y-based oxide. As described above, by including the Y-based oxide in the plasma-resistant glass, the etching resistance is improved, and the problem of craters occurring on some surfaces during plasma etching can be prevented. Table 1 is a table showing the sublimation enthalpy of fluorine-based compounds. As shown in Table 1 below, among fluorine-based compounds, the compound having the highest sublimation enthalpy and sublimation temperature corresponds to YF3; therefore, by including its precursor in the plasma-resistant glass to prevent sublimation during the plasma etching process, contamination by impurities can be prevented, and etching resistance can be improved.

[0056] Fluorine-based compound sublimation temperature (°C), sublimation enthalpy, △ sub H * (kJ / mol)YF32,230445.2BF3-100.315SiF4-86.025.8PF3-101.817.2NaF1,704284.9AlF31,275301.4MgF22,260397.4

[0057] According to one embodiment of the present invention, the content of the Y-based oxide in the plasma-resistant glass is 4 wt% or more and 35 wt% or less. Specifically, the content of the Y-based oxide may be 5 wt% or more and 34 wt% or less, 7 wt% or more and 30 wt% or less, or 14 wt% or more and 25 wt% or less. When the content of the Y-based oxide is controlled to the above-described range, the etching resistance of the plasma-resistant glass can be improved by preventing the occurrence of craters during plasma etching, and even if a high content of Si-based oxide is included, it can be easily melted. According to one embodiment of the present invention, the weight ratio of the Si-based oxide and the Y-based oxide included in the plasma-resistant glass may be 1.3 to 24:1. Specifically, it may be 1.35 to 18.1:1, 1.65 to 15.4:1, 1.65 to 15.4:1, 2.1 to 9.6:1, or 2.85 to 5.00:1. When the weight ratio of the Si-based oxide and the Y-based oxide is controlled to the range described above, the etching resistance of the plasma-resistant glass can be improved while simultaneously reducing contamination.

[0058] According to one embodiment of the present invention, the plasma-resistant glass may further include an Al-based oxide, a Ca-based oxide, and combinations thereof. By further including at least one of the Al-based oxide and the Ca-based oxide, the etching resistance of the plasma-resistant glass can be improved. In addition, the degree of contamination occurring during the etching process can be minimized and the light transmittance can be improved.

[0059] According to one embodiment of the present invention, the content of the Al-based oxide may be 3 wt% or more and 12 wt% or less. Specifically, the content of the Al-based oxide may be 3.5 wt% or more and 12 wt% or less, 4.0 wt% or more and 11.5 wt% or less, 7.3 wt% or more and 11.1 wt% or less, or 7.5 wt% or more and 10.6 wt% or less. When the weight percentage of the Al-based oxide is controlled to the above-described range, outgassing is prevented, the generation of particles is suppressed, and the wear resistance of internal chamber components for semiconductor manufacturing processes can be improved.

[0060] According to one embodiment of the present invention, the content of the Ca-based oxide may be 6 wt% or more and 16 wt% or less. Specifically, the content of the Ca-based oxide may be 6.7 wt% or more and 13.6 wt% or less, 7.2 wt% or more and 13.3 wt% or less, 9.6 wt% or more and 11.0 wt% or less, or 10.0 wt% or more and 10.5 wt% or less. When the weight percentage of the Ca-based oxide is controlled to the above-described range, the degree of contamination occurring during the etching process can be minimized and the light transmittance can be improved.

[0061] According to one embodiment of the present invention, the Si-based oxide may be SiO2. When the Si-based oxide of the plasma-resistant glass is SiO2, the basic physical properties of the plasma-resistant glass can be secured, and durability and reliability can be improved. In addition, the processing of the plasma-resistant glass can be facilitated, thereby reducing the production cost of the component.

[0062] According to one embodiment of the present invention, the Y-based oxide may be Y2O3. When the Y-based oxide of the plasma-resistant glass is Y2O3, the coefficient of thermal expansion and glass transition temperature of the plasma-resistant glass can be achieved at a low level, thermal shock at high temperatures can be minimized, the durability of internal components for chambers used in semiconductor manufacturing processes can be improved, and the dielectric constant can be achieved within an appropriate range. Furthermore, high hardness and high toughness can be achieved in the plasma-resistant glass during the etching process by a CCP-etching device. Moreover, since a compound having high sublimation enthalpy and sublimation temperature corresponds to YF3, by including Y2O3 as the Y-based oxide that serves as its precursor in the plasma-resistant glass to prevent sublimation during the plasma etching process, contamination by impurities can be prevented, and etching resistance can be improved.

[0063] According to one embodiment of the present invention, the Al-based oxide may be Al2O3. When the Al-based oxide of the plasma-resistant glass is Al2O3, outgassing of the plasma-resistant glass can be prevented and particle generation can be suppressed, and the wear resistance of internal components for a semiconductor manufacturing process chamber can be improved. In addition, outgassing of the plasma-resistant glass can be prevented and particle generation can be suppressed, and the wear resistance of internal components for a semiconductor manufacturing process chamber can be improved.

[0064] According to one embodiment of the present invention, the Ca-based oxide may be CaO. When the Ca-based oxide of the plasma-resistant glass is CaO, the thermal expansion coefficient and glass transition temperature of the plasma-resistant glass are lowered, thereby minimizing thermal shock at high temperatures and improving the durability of internal components for a semiconductor manufacturing process chamber, and the dielectric constant can be implemented within an appropriate range.

[0065] According to one embodiment of the present invention, the plasma-resistant glass may be composed of a Si-based oxide, a Y-based oxide, an Al-based oxide, and a Ca-based oxide. Specifically, the plasma-resistant glass may be composed only of a Si-based oxide, a Y-based oxide, an Al-based oxide, a Ca-based oxide, and unavoidable impurities.

[0066] According to one embodiment of the present invention, the plasma-resistant glass may be amorphous. In this specification, amorphous may mean glassy. As described above, by implementing the structure of the plasma-resistant glass as amorphous, the durability of a component using the plasma-resistant glass can be improved, while the etching rate by plasma can be reduced.

[0067] According to one embodiment of the present invention, the dielectric constant of the plasma-resistant glass may be 7 or more and 10 or less. Specifically, the dielectric constant may be 7.5 or more and 9.7 or less, 8.0 or more and 9.4 or less, 8.5 or more and 9.1 or less, or 8.8 or more and 8.9 or less. Methods for measuring the dielectric constant include the capacitance method using an LCR meter, the reflection coefficient method using a network analyzer, and the resonant frequency method. As an example of the method for measuring the dielectric constant, the capacitance method using an LCR meter is mainly used to measure low-frequency characteristics (kHz, MHz), and the dielectric constant can be determined from the physical size and capacitance of the capacitor. More specifically, it may mean measuring the dielectric constant in the frequency range of 20 Hz to 100 Hz using a Keysight E4990A Impedance Analyzer. When the dielectric constant of the plasma-resistant glass is controlled to the range described above, the plasma-resistant glass can minimize thermal shock at high temperatures and improve the durability of internal components for a semiconductor manufacturing process chamber. In addition, the light transmittance and durability of the plasma-resistant glass can be improved.

[0068] According to one embodiment of the present invention, the plasma-resistant glass may have a light transmittance of 80% or more and 100% or less. Specifically, the plasma-resistant glass may have a light transmittance of 82% or more and 95% or less, 85% or more and 90% or less, 85% or more and 95% or less, 84% or more and 90% or less, or 80% or more and 90% or less. In this specification, “light transmittance” may refer to a value measured using a haze meter (JCH-300S, Oceanoptics). When the light transmittance of the plasma-resistant glass is controlled to the range described above, the meltability of the plasma-resistant glass can be improved, and vitrification can be achieved at a high level.

[0069] According to one embodiment of the present invention, the plasma-resistant glass may be formed by melting a composition comprising SiO2, Y2O3, Al2O3, and CaO. Specifically, the plasma-resistant glass may be formed by melting a composition comprising SiO2, Y2O3, Al2O3, and CaO. As described above, by forming the plasma-resistant glass by melting the composition, each component can be uniformly distributed in the plasma-resistant glass, and a uniform etching rate can be achieved across the entire area of ​​the plasma-resistant glass.

[0070]

[0071] One embodiment of the present invention provides a component for the interior of a chamber for a semiconductor manufacturing process, which is made of the plasma-resistant glass.

[0072] A component for an internal chamber for a semiconductor manufacturing process according to one embodiment of the present invention improves plasma resistance, extends the replacement cycle of the component, and can minimize impurities generated during the etching process.

[0073] According to one embodiment of the present invention, the internal chamber component for the semiconductor manufacturing process may be any one of a focus ring, an edge ring, a cover ring, a ring shower, an insulator, an EPD window, an electrode, a viewport, an inner shutter, an electrostatic chuck, a heater, a chamber liner, a shower head, a boat for CVD (Chemical Vapor Deposition), a wall liner, a shield, a cold pad, a source head, an outer liner, a deposition shield, an upper liner, an exhaust plate, and a mask frame. By using the internal chamber component described above, the resistance to plasma in the semiconductor manufacturing process is improved to extend the usage time, thereby minimizing the cost required for semiconductor manufacturing.

[0074] One embodiment of the present invention provides a method for manufacturing plasma-resistant glass comprising: a step (S11) of melting a composition comprising 45 weight% or more and 84 weight% or less of a Si-based oxide and 4 weight% or more and 35 weight% or less of a Y-based oxide; and a step (S13) of cooling the melted composition.

[0075] A method for manufacturing plasma-resistant glass according to one embodiment of the present invention can easily manufacture plasma-resistant glass and prevent damage caused by thermal shock in a high-temperature atmosphere. Furthermore, a method for manufacturing plasma-resistant glass according to one embodiment of the present invention can improve moldability by controlling the viscosity of the composition.

[0076] FIG. 1 is a flowchart of a method for manufacturing plasma-resistant glass according to one embodiment of the present invention.

[0077] A method for manufacturing plasma-resistant glass according to one embodiment of the present invention will be described in detail with reference to FIG. 1 above.

[0078] According to one embodiment of the present invention, the melting temperature of the step (S11) of melting the composition may be 1,500 ℃ or higher and 1,900 ℃ or lower. Specifically, the melting temperature of the step of melting the above composition is 1,510 ℃ or higher and 1,890 ℃ or lower, 1,520 ℃ or higher and 1,880 ℃ or lower, 1,530 ℃ or higher and 1,870 ℃ or lower, 1,540 ℃ or higher and 1,860 ℃ or lower, 1,550 ℃ or higher and 1,850 ℃ or lower, 1,560 ℃ or higher and 1,840 ℃ or lower, 1,570 ℃ or higher and 1,830 ℃ or lower, 1,580 ℃ or higher and 1,820 ℃ or lower, 1,590 ℃ or higher and 1,810 ℃ or lower, 1,600 ℃ or higher and 1,800 ℃ or lower, 1,610 ℃ or higher and 1,790 ℃ or lower, 1,620 ℃ or higher and 1,780 ℃ or lower, and 1,630 The temperature may be between 1,770°C and 1,640°C and 1,760°C. If the melting temperature of the step of melting the composition is within the range described above, the viscosity of the molten composition can be controlled to improve the workability of the process of manufacturing the plasma-resistant glass.

[0079] According to one embodiment of the present invention, the method includes a step (S13) of cooling the molten glass composition. By including the step of cooling the molten glass composition as described above, the crystals of the plasma-resistant glass can be controlled, and breakage due to sudden thermal changes can be prevented.

[0080] According to one embodiment of the present invention, the temperature of the cooling step may be room temperature. By controlling the temperature of the cooling step within the above-described range, the viscosity of the plasma-resistant glass composition can be controlled, and melting can be easily performed during the process of manufacturing a component for the interior of a chamber for the semiconductor manufacturing process.

[0081] According to one embodiment of the present invention, the composition may further comprise an Al-based oxide in an amount of 3% by weight or more and 12% by weight or less, and a Ca-based oxide in an amount of 6% by weight or more and 16% by weight or less. When the composition is adjusted to the range described above, the contamination level of the plasma-resistant glass can be improved. Furthermore, by controlling the content of the above components, the dielectric constant of the plasma-resistant glass can be appropriately achieved, damage caused by thermal shock in a high-temperature atmosphere of the plasma-resistant glass can be prevented, and a low melting temperature can be achieved. Moreover, light transmittance and durability can be improved, and products having complex shapes can be easily manufactured by controlling the viscosity of the melt.

[0082] One embodiment of the present invention provides a method for manufacturing a component for the interior of a chamber for a semiconductor manufacturing process, comprising the steps of: melting the plasma-resistant glass (S21); injecting the molten plasma-resistant glass into a mold (S23); and annealing the injected plasma-resistant glass (S25), wherein the melting temperature of the step of melting the plasma-resistant glass is 1,500 ℃ or higher and 1,900 ℃ or lower, and the temperature of the step of annealing is 400 ℃ or higher and 900 ℃ or lower.

[0083] A method for manufacturing a component for use inside a chamber for a semiconductor manufacturing process according to one embodiment of the present invention can manufacture a component having various shapes, prevent damage caused by thermal shock in a high-temperature atmosphere, and easily manufacture the component.

[0084] FIG. 2 is a flowchart of a method for manufacturing a component for inside a chamber for a semiconductor manufacturing process according to one embodiment of the present invention.

[0085] Referring to FIG. 2 above, a method for manufacturing a component for the interior of a chamber for a semiconductor manufacturing process according to one embodiment of the present invention will be described in detail.

[0086] According to one embodiment of the present invention, a method for manufacturing a component for the interior of a chamber for a semiconductor manufacturing process includes a step (S21) of melting the plasma-resistant glass. By including the step of melting the plasma-resistant glass as described above, the workability of the process for manufacturing the component for the interior of a chamber for a semiconductor manufacturing process is improved, and at the same time, by injecting the molten plasma-resistant glass into a mold, it can be molded into various shapes.

[0087] According to one embodiment of the present invention, the melting temperature of the step of melting the plasma-resistant glass may be 1,500 ℃ or higher and 1,900 ℃ or lower. Specifically, the melting temperature of the step of melting the plasma-resistant glass is 1,510 ℃ or higher and 1,890 ℃ or lower, 1,520 ℃ or higher and 1,880 ℃ or lower, 1,530 ℃ or higher and 1,870 ℃ or lower, 1,540 ℃ or higher and 1,860 ℃ or lower, 1,550 ℃ or higher and 1,850 ℃ or lower, 1,560 ℃ or higher and 1,840 ℃ or lower, 1,570 ℃ or higher and 1,830 ℃ or lower, 1,580 ℃ or higher and 1,820 ℃ or lower, 1,590 ℃ or higher and 1,810 ℃ or lower, 1,600 ℃ or higher and 1,800 ℃ or lower, 1,610 ℃ or higher and 1,790 ℃ or lower, and 1,620 ℃ or higher and 1,780 ℃ or lower. The temperature may be 1,630 ℃ or higher and 1,770 ℃ or lower, or 1,640 ℃ or higher and 1,760 ℃ or lower. By controlling the melting temperature of the step of melting the plasma-resistant glass within the above-described range, the viscosity of the molten composition can be controlled to improve the workability of the process of manufacturing the plasma-resistant glass.

[0088] According to one embodiment of the present invention, a method for manufacturing a component for the interior of a chamber for a semiconductor manufacturing process includes the step (S23) of injecting the molten plasma-resistant glass into a mold. By injecting the molten plasma-resistant glass into the mold as described above, various types of components can be manufactured.

[0089] According to one embodiment of the present invention, the mold in the step of injecting the molten plasma-resistant glass into the mold may have any one of the following forms: a focus ring, an edge ring, a cover ring, a ring shower, an insulator, an EPD window, an electrode, a view port, an inner shutter, an electrostatic chuck, a heater, a chamber liner, a shower head, a boat for CVD (Chemical Vapor Deposition), a wall liner, a shield, a cold pad, a source head, an outer liner, a deposition shield, an upper liner, an exhaust plate, and a mask frame. By implementing the shape of the mold in various ways as described above, the shape of the part can be easily implemented, thereby reducing manufacturing time.

[0090] According to one embodiment of the present invention, a method for manufacturing a component for the interior of a chamber for a semiconductor manufacturing process includes a step (S25) of annealing the injected plasma-resistant glass. By including the step of annealing the injected plasma-resistant glass as described above, stress caused by heat generated in the component manufactured by being injected into the mold is minimized, thereby improving the durability of the component and minimizing thermal shock at high temperatures.

[0091] According to one embodiment of the present invention, the temperature of the annealing step may be 400°C or higher and 900°C or lower. Specifically, the temperature of the annealing step is 430 ℃ or higher and 890 ℃ or lower, 450 ℃ or higher and 880 ℃ or lower, 470 ℃ or higher and 870 ℃ or lower, 500 ℃ or higher and 860 ℃ or lower, 550 ℃ or higher and 850 ℃ or lower, 560 ℃ or higher and 840 ℃ or lower, 570 ℃ or higher and 830 ℃ or lower, 580 ℃ or higher and 820 ℃ or lower, 590 ℃ or higher and 810 ℃ or lower, 600 ℃ or higher and 800 ℃ or lower, 610 ℃ or higher and 790 ℃ or lower, 620 ℃ or higher and 780 ℃ or lower, 630 ℃ or higher and 770 ℃ or lower, 640 ℃ or higher and 760 ℃ or lower, 650 ℃ or higher and 750 ℃ ​​or lower, and 660 ℃ or higher The temperature may be 740 ℃ or lower, 670 ℃ or higher and 730 ℃ or lower, 680 ℃ or higher and 720 ℃ or lower, or 690 ℃ or higher and 710 ℃ or lower. By controlling the temperature of the annealing step within the above-described range, the stress caused by heat formed within the component inside the chamber for the semiconductor manufacturing process can be reduced, and thermal shock at high temperatures can be minimized to improve the durability of the component.

[0092] According to one embodiment of the present invention, the method may further include a step (S27) of processing a precursor of a component for the interior of a chamber for a semiconductor manufacturing process, manufactured using the annealed plasma-resistant glass. By processing the precursor of the component for the interior of a chamber for a semiconductor manufacturing process as described above, a sophisticated component can be manufactured.

[0093] Hereinafter, the present invention will be described in detail with reference to examples to specifically explain the invention. However, the embodiments according to the present invention may be modified in various different forms, and the scope of the present invention is not to be interpreted as being limited to the embodiments described below. The embodiments of this specification are provided to more completely explain the present invention to those with average knowledge in the art.

[0094] <Examples 1 to 9>

[0095] A composition was prepared by mixing the components and content as shown in Table 2 below. Subsequently, the composition was heated to 1,700 ℃ for 4 hours to melt it, and then cooled at room temperature to produce plasma-resistant glass.

[0096] Composition Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 SiO2 (wg%) 83.227 4.537 4.727 1.905 7.235 3.204 9.594 6.18 Al2O3 (wg%) 4.07 3.79 7.58 7.39 11.98 11.45 11.001 0.52 CaO (middle Amount %) 7.29 6.77 13.57 13.21 10.9 110.44 10.02 9.63 Y2O3 (Weight %) 5.42 14.9 14.13 7.50 19.88 24.9 129.39 33.67 Weight ratio of SiO2 to Y2O3 15.35 5.00 18.09 9.59 2.88 2.14 1.69 1.37

[0097] <Reference Example> Quartz (SiO2 100 wt%) was prepared. Subsequently, the above composition was heated to 1,700 ℃ for 4 hours to melt it, and then cooled at room temperature to produce plasma-resistant glass.

[0098] <Comparative Examples 1 to 5>

[0099] A composition was prepared by mixing the components and content as shown in Table 3 below. Subsequently, the composition was heated to 1,700 ℃ for 4 hours to melt it, and then cooled at room temperature to produce plasma-resistant glass.

[0100] Composition Reference Preliminary Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 SiO2 (wg%) 100 49.80 80.28 82.16 76.00 45.00 Al2O3 (wg%) 0 11.80 7.07 4.33 8.00 10.00 CaO (wg%) 0 38.40 12.65 7.75 13.00 10.00 Y2O3 (wg%) 0 0 0 3.00 35.00 ZrO2 (wg%) 0 0 5.76 00 Content ratio of SiO2 and Y2O3 ---- 25.33 1.29

[0101] <Experimental Example 1: Measurement of the molten state of plasma-resistant glass> The appearance of plasma-resistant glass was measured after placing the above Examples 1 to 8 and Comparative Examples 2 to 5 into a platinum crucible, heating them for 4 hours under conditions of 1,700 ℃ and 1 atm, and then cooling them to room temperature.

[0102] FIG. 3 is a photograph of plasma-resistant glass of Example 1 according to one embodiment of the present invention. FIG. 4 is a photograph of plasma-resistant glass of Example 2 according to one embodiment of the present invention. FIG. 5 is a photograph of plasma-resistant glass of Example 3 according to one embodiment of the present invention. FIG. 6 is a photograph of plasma-resistant glass of Example 4 according to one embodiment of the present invention. FIG. 7 is a photograph of plasma-resistant glass of Example 5 according to one embodiment of the present invention. FIG. 8 is a photograph of plasma-resistant glass of Example 6 according to one embodiment of the present invention. FIG. 9 is a photograph of plasma-resistant glass of Example 7 according to one embodiment of the present invention. FIG. 10 is a photograph of plasma-resistant glass of Example 8 according to one embodiment of the present invention. FIG. 11 is a photograph of plasma-resistant glass of Comparative Example 2. Fig. 12 is a photograph of the plasma-resistant glass of Comparative Example 3. Fig. 13 is a photograph of the plasma-resistant glass of Comparative Example 4. Fig. 14 is a photograph of the plasma-resistant glass of Comparative Example 5.

[0103] Referring to FIGS. 3 to 10 above, it was confirmed that Examples 1 to 8 were all melted and vitrified without any unmelted parts. On the other hand, referring to FIGS. 11 to 14 above, it was confirmed that Comparative Example 5 was unmelted.

[0104] <Experimental Example 2: Measurement of Dielectric Constant of Plasma-Resistant Glass>

[0105] The dielectric constants of the above reference example, comparative example 1, and examples 1 to 9 were measured by the capacitance method using an LCR measuring instrument (Keysight E4990A Impedance Analyzer) at a measurement frequency of 1 MHz and summarized in Table 4 below.

[0106] <Experimental Example 3: Measurement of Light Transmittance of Plasma-Resistant Glass>

[0107] The above reference example, comparative example 1, and examples 1 to 9 were processed to a thickness of 1 mm, and the light transmittance was measured in the range of 380 nm to 780 nm using a spectrophotometer (SD-4000, NIPPON DENSHOKU) and summarized in Table 4 below.

[0108]

[0109] Reference Example Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Dielectric Constant @ 1MHz 4~57.58.58.88.08.99.19.49.7 Light Transmittance (%) 929088888989908988

[0110] Referring to Table 4 above, it was confirmed that Examples 1 to 8 have dielectric constants and light transmittances similar to the reference example. Meanwhile, it was confirmed that the dielectric constants of Examples 1 to 8 increased compared to the reference example.

[0111] <Experimental Example 4: Analysis of Particle Contamination Components Due to Etching>

[0112] Etching was performed on Comparative Example 1 and Example 8 under the conditions shown in Table 5 below. After performing the etching of Comparative Example 1 and Example 8, particle contamination was checked using SEM-EDS (Bruker X FLASH). Figure 15 is a schematic diagram for performing Experimental Example 4. As shown in Figure 15, after marking Comparative Example 1 and Example 8 respectively, it was checked whether contamination occurred in the exposed portion between the masks.

[0113] Etching Environment CF4 Mixed Gas Environment RF POWER(W)600 RF POWER, BIAS(W)150 CF4 Flow Rate (SCCM)30 Ar Flow Rate (SCCM)10 O2 Flow Rate (SCCM)5 Pressure10 Etching Time(min)60

[0114] Figure 16 shows SEM images of wafers after plasma etching and particles surrounding the samples for Comparative Example 1 and Example 8. Referring to the wafer image after plasma etching in Figure 16, it was confirmed that in Comparative Example 1, wafer contamination occurred due to a reaction between the alkali metal and the gas generated during the etching process after plasma etching. In contrast, it was confirmed that no wafer contamination occurred in Example 8.

[0115]

[0116] <Experimental Example 5: Verification of Etching Rate>

[0117] For Reference Example, Comparative Examples 2 to 4, Example 4, and Example 8, etching was performed under the conditions shown in Table 5 above, and the etching rate ratio for quartz for the same plasma etching time was shown.

[0118] FIG. 17 is a graph showing the etching rate ratios of the Reference Example, Comparative Examples 2 to 4, Example 4, and Example 8 for quartz (Reference Example). Referring to FIG. 17, it was confirmed that the etching resistance was improved in Examples 4 and 5 due to the low etching rate.

[0119] In contrast, Comparative Example 2 was found to have reduced etching resistance because it did not contain Y-based oxide, Comparative Example 3 was found to have reduced etching resistance because it contained ZrO2, and Comparative Example 4 was found to have reduced etching resistance because it had a small amount of Y-based oxide added.

[0120] FIG. 18 is a magnified photograph of the surface of glass before and after plasma etching of the reference example, Example 4, and Example 8.

[0121] Referring to Figure 16 above, in the case of the reference example, a crater was observed on the surface after plasma etching, but in the case of Examples 4 and 8, it was confirmed that no damage occurred on the surface after plasma etching.

Claims

Plasma-resistant glass comprising Si-based oxide in an amount of 1.45 wt% or more and 84 wt% or less and Y-based oxide in an amount of 4 wt% or more and 35 wt% or less.

2. In Claim 1, Plasma-resistant glass further comprising Al-based oxides, Ca-based oxides, and combinations thereof.

3. In Claim 2, Plasma-resistant glass having a content of 3 weight% or more and 12 weight% or less of the above Al-based oxide.

4. In Claim 2, Plasma-resistant glass having a content of 6% by weight or more and 16% by weight or less of the above Ca-based oxide.

5. In Claim 2, The above Si-based oxide is SiO2, and The above Y-based oxide is Y2O3, and The above Al-based oxide is Al2O3, and Plasma-resistant glass in which the above Ca-based oxide is CaO.

6. In Claim 1, Plasma-resistant glass with a light transmittance of 80% or more and 100% or less.

7. A component for the interior of a chamber for a semiconductor manufacturing process, made of plasma-resistant glass according to any one of claims 1 to 6.

8. In Claim 7, The internal chamber component for the semiconductor manufacturing process described above is any one of a focus ring, edge ring, cover ring, ring shower, insulator, EPD window, electrode, view port, inner shutter, electrostatic chuck, heater, chamber liner, shower head, CVD (Chemical Vapor Deposition) boat, wall liner, shield, cold pad, source head, outer liner, deposition shield, upper liner, exhaust plate, and mask frame. A step of melting a composition comprising a Si-based oxide in an amount of 9.45 wt% or more and 84 wt% or less and a Y-based oxide in an amount of 4 wt% or more and 35 wt% or less; and A method for manufacturing plasma-resistant glass comprising the step of cooling the molten composition.

10. In Claim 9, A method for manufacturing plasma-resistant glass, wherein the above composition further comprises 3% by weight or more and 12% by weight or less of Al-based oxide and 6% by weight or more and 16% by weight or less of Ca-based oxide.

11. In Claim 9, A method for manufacturing plasma-resistant glass, wherein the melting temperature of the step of melting the above composition is 1,500 ℃ or higher and 1,900 ℃ or lower.

12. A step of melting the plasma-resistant glass of any one of claims 1 to 6; A step of injecting the molten plasma-resistant glass into a mold; and The method includes the step of annealing the injected plasma-resistant glass; The melting temperature of the step of melting the above plasma-resistant glass is 1,500 ℃ or higher and 1,900 ℃ or lower, and A method for manufacturing a component for use inside a chamber for a semiconductor manufacturing process, wherein the temperature of the annealing step is 400 ℃ or higher and 900 ℃ or lower.

Images