C-axis oriented IZTO oxide semiconductor and thin film transistor having same

A crystalline IZTO semiconductor layer oriented in the C-axis direction, achieved via a transition metal-induced heat treatment, addresses the instability of amorphous oxide layers, enhancing field-effect mobility and stability in thin-film transistors.

WO2026155460A1PCT designated stage Publication Date: 2026-07-23INDUSTRY UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
INDUSTRY UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
Filing Date
2026-01-05
Publication Date
2026-07-23

AI Technical Summary

Technical Problem

Existing oxide semiconductor layers in thin-film transistors are amorphous and exhibit electrical and chemical instability, limiting their field-effect mobility.

Method used

A thin-film transistor with a crystalline IZTO (In-Zn-Sn oxide) semiconductor layer is developed, oriented in the C-axis direction, achieved through a crystallization heat treatment process using a transition metal layer, resulting in a layer with high field-effect mobility.

Benefits of technology

The crystalline IZTO layer provides a thin-film transistor with improved crystal quality and high field-effect mobility, demonstrating excellent stability under gate bias stress.

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Abstract

Provided are a crystalline IZTO oxide semiconductor and a thin film transistor having same. The thin film transistor includes a gate electrode, an In-Zn-Sn oxide (IZTO) semiconductor layer overlapping the gate electrode, a gate insulating film disposed between the gate electrode and the IZTO semiconductor layer, and source and drain electrodes respectively connected to both ends of the IZTO semiconductor layer. The IZTO semiconductor layer has crystal grains all having a (ZnO)17In2O3 phase and is a preferentially oriented in the C-axis direction.
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