Electronic element and display device, and manufacturing method therefor

Abstract

An electronic element according to an embodiment of the present disclosure comprises: a substrate; an electrode formed on the substrate; and an indium tin oxide (ITO) transparent electrode formed on the electrode, wherein the ITO transparent electrode includes 14 to 22 wt% Sn.

Description

Electronic device, display device and method of manufacturing the same

[0001] The present disclosure relates to an electronic device comprising an ITO transparent electrode, a display device, and a method for manufacturing the same.

[0002] Indium Tin Oxide (ITO) transparent electrodes are used as essential components in various optoelectronic devices due to their characteristics of possessing both high electrical conductivity and excellent light transmittance in the visible light range. In particular, they are widely utilized as transparent electrode materials in electronic devices such as displays, solar cells, and touchscreens.

[0003] Conventional ITO transparent electrodes are generally manufactured via a sputtering process and exhibit various electrical and optical properties depending on the deposition conditions. Process variables such as ITO film thickness, deposition conditions, and substrate temperature are key factors affecting sheet resistance and light transmittance. However, existing ITO transparent electrodes have faced limitations in simultaneously improving both properties due to a trade-off relationship between sheet resistance and light transmittance. For example, increasing the thickness of the ITO film reduces sheet resistance but lowers light transmittance, whereas conversely, decreasing the film thickness improves light transmittance but increases sheet resistance.

[0004] Therefore, active research is being conducted on the development of ITO transparent electrodes capable of simultaneously improving sheet resistance and light transmittance, as well as on manufacturing methods for electronic devices applying them. In particular, various attempts are being made to enhance the characteristics of ITO transparent electrodes through the optimization of process conditions, control of doping concentration, and the introduction of post-processing steps.

[0005] Against this backdrop, the present invention aims to provide an electronic device and a display device comprising an ITO transparent electrode capable of simultaneously realizing low sheet resistance and excellent light transmittance, and to present a method for efficiently manufacturing the same.

[0006] One aspect of the present disclosure provides an electronic device and a display device comprising an ITO (Indium Tin Oxide) transparent electrode with improved transmittance and sheet resistance.

[0007] One aspect of the present disclosure provides an electronic device and a display device comprising an ITO (Indium Tin Oxide) transparent electrode with improved transmittance and sheet resistance through control of the composition ratio of Sn.

[0008] One aspect of the present disclosure provides a method for manufacturing a display device that can secure excellent electrical and optical properties without an additional heat treatment process through an ITO transparent electrode containing Sn of a specific composition.

[0009] The technical problems to be solved in this document are not limited to those mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art to which this invention belongs from the description below.

[0010] An electronic device according to one embodiment of the present disclosure may include a substrate, an electrode formed on the substrate, and an ITO (Indium Tin Oxide) transparent electrode formed on the electrode. The ITO transparent electrode may be characterized by containing 14 to 22 weight percent of Sn.

[0011] A display device according to one embodiment of the present disclosure may include: a substrate; a first electrode layer provided on the substrate; a second electrode layer provided on the first electrode layer and comprising an ITO transparent electrode; and a light-emitting layer provided between the first electrode layer and the second electrode layer and comprising a plurality of vertical light-emitting elements. The ITO transparent electrode may be characterized by comprising 14 to 22 weight% of Sn.

[0012] A method for manufacturing a display device according to one embodiment of the present disclosure may include: a step of forming a first electrode layer on a substrate; a step of forming a light-emitting layer comprising a plurality of vertical light-emitting elements on the first electrode layer; and a step of forming a second electrode layer comprising an ITO transparent electrode on the light-emitting layer. The step of forming the second electrode layer may include a step of forming an ITO transparent electrode through sputtering, and may be characterized in that a heat treatment step after sputtering can be omitted.

[0013] According to the concept of the present disclosure, an electronic device, a display device, and a method for manufacturing the same can be provided, comprising an ITO (Indium tin oxide) transparent electrode with high transmittance.

[0014] According to the concept of the present disclosure, an electronic device, a display device, and a method for manufacturing the same can be provided, comprising an ITO (Indium Tin Oxide) transparent electrode having low sheet resistance.

[0015] According to the concept of the present disclosure, a method for manufacturing a display device can be provided that secures excellent electrical and optical properties without an additional heat treatment process through an ITO transparent electrode containing Sn of a specific composition.

[0016] The effects according to the concept of the present disclosure are not limited to the effects mentioned above, and other unmentioned effects will be clearly understood by those skilled in the art from the description below.

[0017] FIG. 1 is a perspective view showing an example of a display module according to one embodiment and a display device including the same.

[0018] FIG. 2 is a diagram showing an example of a pixel array constituting a unit module of a display device according to one embodiment.

[0019] FIG. 3 is an enlarged cross-sectional view of one side of a display device according to one embodiment.

[0020] FIG. 4 is a graph showing the resistivity and sheet resistance of an ITO transparent electrode according to the power applied to an SnO2 target in a sputtering step according to one embodiment of the present disclosure.

[0021] FIG. 5 is a graph showing the sheet resistance according to the Sn composition of an ITO transparent electrode according to one embodiment of the present disclosure.

[0022] FIG. 6 is a flowchart of a method for manufacturing a display device according to one embodiment of the present disclosure.

[0023] FIG. 7 is a cross-sectional view illustrating a method for manufacturing a display device according to one embodiment of the present disclosure.

[0024] FIGS. 8 and 9 are drawings illustrating an example in which a transparent electrode and a cathode are electrically contacted according to one embodiment of the present disclosure.

[0025] The various embodiments of the present disclosure and the terms used therein are not intended to limit the technical features described in the present disclosure to specific embodiments, and should be understood to include various modifications, equivalents, or substitutions of said embodiments.

[0026] In relation to the description of the drawings, similar reference numerals may be used for similar or related components.

[0027] The singular form of the noun corresponding to the item may include one or multiple items, unless the relevant context clearly indicates otherwise.

[0028] In the present disclosure, each of the phrases such as “A or B”, “at least one of A and B”, “at least one of A or B”, “A, B or C”, “at least one of A, B and C”, and “at least one of A, B, or C” may include any one of the items listed together in the corresponding phrase, or all possible combinations thereof.

[0029] The term “and / or” includes a combination of multiple related described components or any of the multiple related described components.

[0030] The terms "part," "module," and "component" may be implemented in hardware or software. Depending on the embodiments, a plurality of "parts," "modules," and "components" may be implemented as a single component, or a single "part," "module," or "component" may include a plurality of components.

[0031] Terms such as "first," "second," or "first" or "second" may be used simply to distinguish a component from another component and do not limit the components in other aspects (e.g., importance or order).

[0032] Additionally, terms such as 'front,' 'rear,' 'top,' 'bottom,' 'side,' 'left,' 'right,' 'top,' and 'bottom' used in this disclosure are defined based on the drawings, and the shape and location of each component are not limited by these terms.

[0033] Where any (e.g., 1st) component is referred to as "coupled" or "connected" to another (e.g., 2nd) component, with or without the terms "functionally" or "communicationly," it means that said any component may be connected to said other component directly (e.g., via a wire), wirelessly, or through a third component.

[0034] Terms such as “include” or “have” are intended to specify the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in this disclosure, and do not preclude the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0035] When it is said that a component is "connected," "combined," "supported," or "in contact" with another component, this includes not only cases where the components are directly connected, combined, supported, or in contact, but also cases where they are indirectly connected, combined, supported, or in contact through a third component.

[0036] When it is said that a component is located "on" another component, this includes not only cases where one component is in contact with the other, but also cases where another component exists between the two components.

[0037] Additionally, terms such as "about," "substantially," etc., in this specification are used to mean at or near the stated value when inherent manufacturing and material tolerances are presented in the said sense, and are used to prevent unscrupulous infringers from unfairly exploiting the disclosed content in which precise or absolute values ​​are mentioned to aid in understanding the invention.

[0038] Unless otherwise specifically stated in this specification, the % indicating the content of each element is based on weight.

[0039] Meanwhile, terms such as "front," "rear," "left," "right," "top," and "bottom" used in the following description are defined based on the drawings; however, the shape and position of each component are not limited by these terms. For example, the front side may be defined as the +X side and the rear side as the -X side. For example, based on the drawings, the right side may be defined as the +Y side and the left side as the -Y side. For example, based on the drawings, the top side may be defined as the +Z side and the bottom side as the -Z side.

[0040] Hereinafter, embodiments according to the present invention will be described in detail with reference to the attached drawings.

[0041] An electronic device according to one embodiment of the present disclosure may include: a substrate (20); electrodes (110R, 110G, 110B, 120R, 120G, 120B, 151, 152, 30, 31R, 31G, 31B, 32, 50) formed on the substrate (20); and an ITO (Indium Tin Oxide) transparent electrode (51) formed on the electrodes (110R, 110G, 110B, 120R, 120G, 120B, 151, 152, 30, 31R, 31G, 31B, 32, 50).

[0042] The above ITO transparent electrode (51) may be characterized by containing 14 to 22 weight% of Sn. Preferably, the above ITO transparent electrode (51) may contain 17 to 22 weight% of Sn. More preferably, the above ITO transparent electrode (51) may contain 19 to 21 weight% of Sn.

[0043] According to one embodiment, an ITO transparent electrode (51) can be formed through simultaneous sputtering using In2O3 and SnO2 targets. When stacking the ITO transparent electrode (51) using simultaneous sputtering, the composition of Sn can be controlled by adjusting the power applied to the SnO2 target.

[0044] Table 1 below shows the sheet resistance, resistivity, and transmittance in the visible light region according to the power applied to the SnO2 target.

[0045] Sheet resistance was measured by the 4-point probe method and the Van der Pauw method, respectively.

[0046] The transmittance was calculated by measuring the transmittance of the ITO transparent electrode (51) in the visible light region (380 to 780 nm) using an ultraviolet-visible spectrophotometer. At this time, 550 nm was used as the reference wavelength and the measurement interval was set to 1 nm. First, a reference value was measured using the same substrate (20) on which the ITO transparent electrode (51) was not deposited, and then the transmitted light intensity of the substrate (20) on which the ITO transparent electrode (51) was deposited was measured. The transmittance of the ITO transparent electrode was calculated as a percentage by dividing the transmitted light intensity of the substrate (20) on which the ITO transparent electrode (51) was deposited by the reference transmitted light intensity and multiplying by 100.

[0047] SnO2 Target Power (W) 4-Probe Sheet Resistance (Ω / sq.) Van der Pont Sheet Resistance (Ω / sq.) Resistivity (10 -4Ωcm)R (620nm) Transmittance (%) G (530nm) Transmittance (%) B (460nm) Transmittance (%) Average Transmittance (%) Comparative Example 1 068.747.57.1295.1487.8677.6588.07 Comparative Example 2 567.445.16.7695.21990.1578.8088.34 Comparative Example 3 1062.142.46.3594.5086.4176.1187.49 Comparative Example 4 1561.942.16.3294.8586.9776.1887.62 Comparative Example 5 2069.447.77.1694.1284.8374.7586.90 Comparative Example 6 2563.14 3.06.4593.6583.7373.8486.31 Comparative Example 73067.845.66.8493.6983.8673.8786.31 Comparative Example 83362.341.76.2693.0182.2672.2786.29 Comparative Example 93569.647.97.1892.9382.3872.7685.56 Comparative Example 104066.945.16.7793.5183.1072.6385.94 Comparative Example 114557.437.75.6593.1982.1471.758 5.55 Example 1 5055.637.15.5692.5880.1071.1485.54 Example 2 5553.135.85.3791.5178.3670.8885.03 Example 3 6052.233.24.9891.0777.4470.2984.75 Example 4 6556.937.75.6590.8876.4067.9983.69 Comparative Example 1 2 7062.141.86.2790.1675.9368.5483.72 Comparative Example 1 3 7563.043.96.59 90.1675.3867.3383.31 Comparative Example 148079.957.98.6888.6672.4963.3881.09 Comparative Example 158581.258.48.7789.0372.9563.5581.29 Comparative Example 169097.266.59.9888.4672.7063.7181.20 Comparative Example 179598.467.410.188.4272.6864.0381.36 Comparative Example 1810011270.710.688.4872.6563.7181.28

[0048] Comparative Example 8 in Table 1 above represents the value when the power applied to the SnO2 target of the ITO transparent electrode (51) is a typical ITO transparent electrode (51) when the Sn content in the ITO transparent electrode (51) is 10 wt%. FIG. 4 is a graph showing the resistivity and sheet resistance of the ITO transparent electrode (51) according to the power applied to the SnO2 target in the sputtering step according to one embodiment of the present disclosure, based on the values ​​in Table 1 above. Referring to Table 1 and FIG. 4, in Examples 1 to 4, by adjusting the power applied to the SnO2 target to control the Sn content of the ITO transparent electrode (51) to a specific range, low sheet resistance and resistivity values ​​were exhibited, which shows superior electrical characteristics compared to other conditions. In particular, it can be confirmed that the Sn content in the conventional ITO transparent electrode (51) is 10 wt%, and the power applied to the SnO2 target of Comparative Example 8 is 33 W, resulting in lower sheet resistance and resistivity values.

[0049] At the same time, under the corresponding conditions (Examples 1 to 4), the average transmittance in the visible light region was maintained at a high level of 80.00% or higher, sufficiently satisfying the optical characteristics required for a transparent electrode.

[0050] Table 2 below shows the Sn composition measured by X-ray Photoelectron Spectroscopy, the sheet resistance value measured by the Van der Pauw Method, and the average transmittance for some comparative examples and examples of ITO transparent electrodes (51).

[0051] Sn Content (Wet%) Van der Poët Sheet Resistance (Ω / sq.) Average Transmittance (%) Comparative Example 5 6.34 7.78 6.90 Comparative Example 8 10.04 1.78 6.29 Comparative Example 10 13.14 5.18 5.94 Example 3 19.63 3.28 4.75 Comparative Example 14 24.65 7.98 1.09 Comparative Example 18 27.97 0.78 1.28

[0052] FIG. 5 is a graph showing the sheet resistance measured by the Van der Pauw Method according to the Sn composition of an ITO transparent electrode according to one embodiment of the present disclosure. Referring to Table 2 and FIG. 5, it can be confirmed that the ITO transparent electrode (51) exhibits excellent electrical characteristics with a low sheet resistance value when it contains 14 to 22 wt% of Sn, preferably 17 to 22 wt% of Sn, and more preferably 19 to 21 wt% of Sn. At the same time, it can be confirmed that the optical characteristics required for a transparent electrode are sufficiently satisfied, as the average transmittance in the visible light region is maintained at a high level of 80.00% or higher under the corresponding conditions. The ITO transparent electrode (51) may be characterized by further including at least one of Zn, Ga, and P as impurities. By adding such impurities, the electrical, optical, and structural characteristics of the ITO transparent electrode (51) can be comprehensively improved, thereby contributing to the improvement of the performance of electronic devices.

[0053] Specifically, adding zinc (Zn) increases the charge carrier concentration within the In-Sn-O structure, thereby improving electrical conductivity, and stabilizes the microstructure of the thin film, which can improve crystallinity. Adding gallium (Ga) suppresses the formation of oxygen vacancies, thereby improving the chemical stability of the thin film, and allows for effective control of the charge carrier concentration, enabling fine adjustment of electrical properties. In particular, it has the advantage of maintaining stable properties even in high-temperature processes. In the case of phosphorus (P), along with improved electrical conductivity due to the doping effect, optical properties can be optimized through bandgap control, and the surface flatness of the ITO transparent electrode (51) can also be improved.

[0054] The above ITO transparent electrode (51) may be characterized by further including at least one of a Group 13 element or a Group 15 element as an impurity. Adding a Group 13 element controls the formation of oxygen vacancies, thereby improving the chemical stability of the thin film and allowing for fine control of the charge carrier concentration, which can optimize electrical conductivity. Meanwhile, adding a Group 15 element improves electrical conductivity through a doping effect and can improve optical properties by controlling the band gap.

[0055] The above ITO transparent electrode (51) may be characterized by having a thickness of 100 to 500 nm. By satisfying the above range, problems such as degradation of electrical characteristics that may occur at less than 100 nm, or a decrease in transmittance and an increase in manufacturing costs that may occur at more than 500 nm, can be prevented. In addition, within this thickness range, structural stability of the thin film is secured, reliability in subsequent processes is improved, and a uniform film can be formed, so it can have characteristics suitable for manufacturing large-area displays.

[0056] The above ITO transparent electrode (51) may be characterized by having a sheet resistance of 40.0 Ω / sq. or less. The sheet resistance value is based on the Van der Pauw Method.

[0057] The above ITO transparent electrode (51) may be characterized by having an average transmittance of 80.00% or more in the visible light region. The above average transmittance refers to the average value of the transmittances of the ITO transparent electrode (51) at 620 nm, 530 nm, and 460 nm, respectively, measured using an ultraviolet-visible spectrophotometer.

[0058] The above electronic device may be characterized as being one of a micro LED, a solar cell, or an OLED.

[0059] FIG. 1 is a perspective view showing an example of a display module according to one embodiment and a display device including the same.

[0060] FIG. 2 is a diagram showing an example of a pixel array constituting a unit module of a display device according to one embodiment.

[0061] A display device according to one embodiment is a self-emissive display device in which a light-emitting element is arranged for each pixel, allowing each pixel to emit light on its own. Therefore, unlike liquid crystal display devices, it does not require components such as a backlight unit or a liquid crystal layer, so a thin thickness can be achieved, and various design changes are possible due to its simple structure.

[0062] In addition, a display device according to one embodiment may employ an inorganic light-emitting diode, such as an inorganic light-emitting diode, as a light-emitting element placed in each pixel. The inorganic light-emitting diode has a faster response speed compared to an organic light-emitting diode, such as an OLED, and can achieve high brightness with low power consumption.

[0063] In addition, unlike organic light-emitting diodes, which are vulnerable to exposure to moisture and oxygen, require an encapsulation process, and have poor durability, it does not require an encapsulation process and has strong durability. Hereinafter, the inorganic light-emitting diode mentioned in the embodiments described below refers to an inorganic light-emitting diode.

[0064] An inorganic light-emitting element employed in a display device according to one embodiment may be a micro LED having a short side length of approximately 100 μm, approximately tens of μm, or several μm. In this way, by employing a micro LED, the pixel size can be reduced and high resolution can be achieved even within the same screen size.

[0065] In addition, manufacturing LED chips in micro-sized units can solve the problem of inorganic materials breaking when bent due to their characteristics. That is, when micro LED chips are transferred onto a flexible substrate, the LED chips do not break even if the substrate is bent, making it possible to realize flexible display devices.

[0066] A display device employing micro LEDs can be applied to various fields by utilizing ultra-small pixel size and thin thickness. For example, as shown in FIG. 1, a large-area screen can be realized by tiling a plurality of display modules (10) on which a plurality of micro LEDs are transferred and fixing them to a main body (20), and such a large-area screen display device (1) can be used as signage, an electronic display board, etc.

[0067] Meanwhile, the three-dimensional coordinate system of the XYZ axes shown in FIG. 1 is based on the display device (1), and the plane where the screen of the display device (1) is located is the XZ plane, and the direction in which the image is output or the direction of light emission of the inorganic light-emitting element is the +Y direction. Since the coordinate system is based on the display device (1), the same coordinate system can be applied whether the display device (1) is lying down or standing up.

[0068] Generally, the display device (1) is used in an upright position, and the user views the image from the front of the display device (1), so the +Y direction in which the image is output can be called the front, and the opposite direction can be called the rear.

[0069] In addition, the display device (1) is generally manufactured in a lying position. Therefore, it is possible to refer to the -Y direction of the display device (1) as the lower direction and the +Y direction as the upper direction. That is, in the embodiment described below, the +Y direction may be referred to as the upper direction or the front, and the -Y direction may be referred to as the lower direction or the rear.

[0070] The remaining four sides, excluding the top and bottom surfaces of the flat-panel display device (1) or display module (10), are all referred to as sides regardless of the orientation of the display device (1) or display module (10).

[0071] In the example of FIG. 1, a case is illustrated in which a display device (1) includes a plurality of display modules to implement a large-area screen, but the embodiment of the display device (1) is not limited thereto. It is also possible for the display device (1) to include a single display module (10) to be implemented as a TV, a wearable device, a portable device, a PC monitor, etc.

[0072] Referring to FIG. 2, the display module (10) may include a plurality of pixels arranged in two dimensions, i.e., a pixel array of M x N (M, N is an integer greater than or equal to 2). FIG. 2 conceptually illustrates the pixel array, and it is understood that in addition to the active area where the pixels are arranged in the display module (10), there may also be a bezel area where an image is not displayed or a wiring area.

[0073] In the embodiments thereof, the fact that certain components are arranged in two dimensions may include not only cases where the components are placed on the same plane, but also cases where they are placed on different planes parallel to each other. Additionally, when the components are placed on the same plane, the tops of the placed components must not necessarily be located on the same plane, and may include cases where the tops of the placed components are located on different planes parallel to each other.

[0074] A pixel (P) may include multiple subpixels that output light of different colors to realize various colors by color combinations. For example, a pixel (P) may consist of at least three subpixels that output light of different colors. Specifically, a pixel (P) may consist of three subpixels (SP(R), SP(G), SP(B)) corresponding to R, G, and B, respectively. Here, the red subpixel (SP(R)) may output red light, the green subpixel (SP(G)) may output green light, and the blue subpixel (SP(B)) may output blue light.

[0075] However, the pixel arrangement of FIG. 2 is merely an example that can be applied to a display module (10) and a display device (1) according to one embodiment, and it is possible for the subpixels to be arranged along the X-axis direction, not arranged in a row, and for the sizes of the subpixels to be different. It is sufficient for a single pixel to include multiple subpixels to implement various colors, and there are no restrictions on the size or arrangement method of each subpixel.

[0076] In addition, a pixel (P) is not necessarily composed of a red subpixel (SP(R)) that outputs red light, a green subpixel (SP(G)) that outputs green light, and a blue subpixel (SP(B)) that outputs blue light; it is also possible to include subpixels that output yellow light or white light. In other words, there are no restrictions on the color or type of light output from each subpixel, or on the number of subpixels.

[0077] However, for the sake of specific explanation in the embodiments described below, the case in which the pixel (P) is composed of a red subpixel (SP(R)), a green subpixel (SP(G)), and a blue subpixel (SP(B)) will be described as an example.

[0078] As previously mentioned, the display module (10) and the display device (1) according to one embodiment are self-emissive display devices in which each pixel can emit light on its own. Accordingly, an inorganic light-emitting element that emits light of a different color may be placed in each subpixel. For example, a red vertical light-emitting element (100R, see FIG. 3) may be placed in the red subpixel (SP(R)), a green vertical light-emitting element (100G, see FIG. 3) may be placed in the green subpixel (SP(G)), and a blue inorganic light-emitting element (100B, see FIG. 3) may be placed in the blue subpixel (SP(B)).

[0079] Accordingly, in the present embodiment, the pixel (P) may represent a cluster including a red vertical light-emitting element (100R, see FIG. 3), a green vertical light-emitting element (100G, see FIG. 3), and a blue inorganic light-emitting element (100B, see FIG. 3), and the subpixel may represent each vertical light-emitting element.

[0080] In the following description, the explanation is based on the display device (1), but the following description may also be applied to each of the plurality of display modules (10) of the display device (1).

[0081] FIG. 3 is an enlarged cross-sectional view of one side of a display device according to one embodiment.

[0082] Referring to FIG. 3, a display device (1) according to one embodiment may include a substrate (20).

[0083] The upper side of the substrate (20) may represent the +Y direction. The lower side of the substrate (20) may represent the -Y direction.

[0084] Various configurations (e.g., a plurality of vertical light-emitting elements (100R, 100G, 100B)) may be arranged on the substrate (20).

[0085] The substrate (20) can be formed from various materials. For example, the substrate (20) may be formed from transparent glass with SiO2 as the main component, may be formed from transparent plastic to have flexibility, and may also be formed from metal.

[0086] The substrate (20), although not shown in FIG. 3, may include a glass substrate (not shown), a buffer layer (not shown) for providing a flat surface on the upper side of the glass substrate, and a thin film transistor (TFT) formed on the upper side of the buffer layer for supplying driving current to a plurality of vertical light-emitting elements (100R, 100G, 100B).

[0087] A display device (1) according to one embodiment may include a first electrode layer (30) provided on a substrate (20).

[0088] The first electrode layer (30) may be an electrode layer in which a plurality of electrodes are formed.

[0089] For example, the first electrode layer (30) may include at least one positive electrode and at least one negative electrode.

[0090] At least one anode may include a first anode (31R), a second anode (31G) and / or a third anode (31B).

[0091] The first anode (31R) may be an electrode for transmitting a driving current supplied from a thin film transistor (TFT) included in the substrate (20) to a red vertical light-emitting element (100R).

[0092] The second anode (31G) may be an electrode for transferring a driving current supplied from a thin film transistor (TFT) included in the substrate (20) to a green vertical light-emitting element (100G).

[0093] The third anode (31B) may be an electrode for transferring a driving current supplied from a thin film transistor (TFT) included in the substrate (20) to a blue vertical light-emitting element (100B).

[0094] The first anode (31R), the second anode (31G), and the third anode (31B) can each be referred to as an anode.

[0095] At least one anode may be composed of one or multiple anodes, but below it is described as being composed of multiple anodes (31R, 31G, 31B).

[0096] At least one cathode (32) may be an electrode through which a driving current flows through a plurality of vertical light-emitting elements (100R, 100G, 100B).

[0097] At least one negative electrode (32) can be referred to as a cathode.

[0098] At least one cathode (32) may be a common electrode composed of one electrode that can be electrically connected to a plurality of anodes (e.g., first anode (31R), second anode (31G), third anode (31B)).

[0099] At least one cathode (32) may be composed of one or multiple, but below it is described as being composed of one cathode (32).

[0100] A display device (1) according to one embodiment may include a light-emitting layer (40) provided on a first electrode layer (30).

[0101] The light-emitting layer (40) may include a plurality of vertical light-emitting elements (100R, 100G, 100B).

[0102] A plurality of vertical light-emitting elements (100R, 100G, 100B) may include a red vertical light-emitting element (100R), a green vertical light-emitting element (100G), and / or a blue vertical light-emitting element (100B).

[0103] Each of the plurality of vertical light-emitting elements (100R, 100G, 100B) may include a first semiconductor layer (111R, 111G, 111B).

[0104] The first semiconductor layer (111R, 111G, 111B) may be a P-type semiconductor layer. For example, the first semiconductor layer (111R, 111G, 111B) may be a P-GaN layer doped with a P-type material.

[0105] Each of the plurality of vertical light-emitting elements (100R, 100G, 100B) may include a first electrode (110R, 110G, 110B) provided on the lower side of the first semiconductor layer (111R, 111G, 111B).

[0106] The first electrode (110R, 110G, 110B) can be electrically contacted with the first semiconductor layer.

[0107] The first electrode (110R, 110G, 110B) may be a P-type electrode.

[0108] The first electrode (110R, 110G, 110B) can be electrically contacted with the positive electrode (31R, 31G, 31B).

[0109] The first electrode (110R, 110G, 110B) is electrically contacted with the positive electrode (31R, 31G, 31B) so that the driving current received from the positive electrode (31R, 31G, 31B) can flow to the first semiconductor layer (111R, 111G, 111B).

[0110] Each of the plurality of vertical light-emitting elements (100R, 100G, 100B) may include a second semiconductor layer (121R, 121G, 121B) disposed on the upper side of the first semiconductor layer (111R, 111G, 111B).

[0111] The second semiconductor layer (121R, 121G, 121B) may be an N-type semiconductor layer. For example, the second semiconductor layer (121R, 121G, 121B) may be an N-GaN layer doped with an N-type material.

[0112] The first semiconductor layer (111R, 111G, 111B) and the second semiconductor layer (121R, 121G, 121B) can be arranged vertically with respect to the substrate (20).

[0113] For example, the first semiconductor layer (111R, 111G, 111B) and the second semiconductor layer (121R, 121G, 121B) can be arranged in the +Y direction, which is the vertical direction of the substrate (20).

[0114] Each of the plurality of vertical light-emitting elements (100R, 100G, 100B) may include an active layer (130R, 130G, 130B) disposed between a first semiconductor layer (111R, 111G, 111B) and a second semiconductor layer (121R, 121G, 121B).

[0115] The active layer (130R, 130G, 130B) may be a light-emitting layer disposed between the first semiconductor layer (111R, 111G, 111B) and the second semiconductor layer (121R, 121G, 121B) in which electrons and holes combine to emit light.

[0116] Each of the plurality of vertical light-emitting elements (100R, 100G, 100B) may include a second electrode (120R, 120G, 120B) provided on the upper side of the second semiconductor layer (121R, 121G, 121B).

[0117] The second electrode (120R, 120G, 120B) may be an N-type electrode.

[0118] The second electrode (120R, 120G, 120B) can be electrically contacted with the ITO transparent electrode (51).

[0119] The second electrode (120R, 120G, 120B) may be composed of multiple electrodes. For example, the second electrode (120R, 120G, 120B) may be placed at the edge and central portion of each of the multiple vertical light-emitting elements (100R, 100G, 100B).

[0120] The second electrode (120R, 120G, 120B) may be configured to be smaller in size than the first electrode (110R, 110G, 110B). However, it is not limited thereto, and the size of the second electrode (120R, 120G, 120B) may be larger than the size of the first electrode (110R, 110G, 110B) and may be the same size as the first electrode (110R, 110G, 110B).

[0121] Although it has been described that the first electrode (110R, 110G, 110B) is a P-type electrode and the second electrode (120R, 120G, 120B) is an N-type electrode, according to various embodiments, the first electrode (110R, 110G, 110B) may be an N-type electrode and the second electrode (120R, 120G, 120B) may be a P-type electrode. In addition, in this case, the first semiconductor layer (111R, 111G, 111B) may be an N-type semiconductor layer and the second semiconductor layer (121R, 121G, 121B) may be a P-type semiconductor layer.

[0122] However, below, the first electrode (110R, 110G, 110B) is described as a P-type electrode and the second electrode is an N-type electrode.

[0123] The first electrode (110R, 110G, 110B) and the second electrode can be arranged in the vertical direction of the substrate (20).

[0124] That is, the light-emitting element according to the present disclosure may be a vertical light-emitting element.

[0125] Unlike lateral or flip types, where different electrodes (e.g., N-type electrode and P-type electrode) are arranged horizontally relative to the substrate, vertical light-emitting devices have different electrodes (e.g., N-type electrode and P-type electrode) arranged vertically relative to the substrate, allowing for a relatively smaller size of the light-emitting device and the realization of high-output light emission.

[0126] The light-emitting layer (40) may include a connector (150) that electrically connects the ITO transparent electrode (51) and the first electrode layer (30). For example, the connector (150) may electrically connect the ITO transparent electrode (51) and the cathode (32).

[0127] Specifically, the connector (150) may include a first connector electrode (151) that is electrically in contact with an ITO transparent electrode (51) and a second connector electrode (152) that is electrically in contact with a negative electrode (32). Additionally, the connector (150) may include a connector semiconductor layer (153) disposed between the first connector electrode (151) and the second connector electrode (152).

[0128] As a result, the ITO transparent electrode (51) and the cathode (32) can be electrically connected.

[0129] The light-emitting layer (40) may include an adhesive film (42). The adhesive film (42) may be a conductive adhesive film. For example, the adhesive film (42) may be composed of an anisotropic conductive film (ACF). However, the material of the adhesive film (42) is not limited thereto. For example, the adhesive film (42) may be composed of a non-conductive film (NCF).

[0130] The adhesive film (42) may be an anisotropic conductive adhesive film (Black Anisotropic Conductive Film; Black ACF) composed of a black polymer resin.

[0131] Additionally, the adhesive film (42) may be a non-conductive adhesive film (Black Non-Conductive Film; Black NCF) composed of a black polymer resin. A portion of the first electrode layer (30) may also be composed of the adhesive film (42).

[0132] The adhesive film (42) may be a material that allows electrical connection in the vertical direction (Y direction) of the substrate (20) but is insulating in the horizontal direction (X direction) of the substrate (20). The adhesive film (42) may include a conductive medium. For example, the adhesive film (42) may include conductive balls. That is, the adhesive film (42) is a film in which conductive balls are mixed with an insulating base member, so that when heat and pressure are applied, only a specific part (e.g., a part where a plurality of vertical light-emitting elements (100R, 100G, 100B) and at least one anode (31R, 31G, 31B) come into contact) can be made conductive by the conductive balls.

[0133] The conductive medium of the adhesive film (42) can be configured in various ways according to the various embodiments, not just the conductive ball.

[0134] For example, if the adhesive film (42) is a non-conductive film (NCF), the conductive medium of the adhesive film (42) may be composed of elastic protrusions or nano carbon.

[0135] Elastic protrusions are conductive protrusions that have elasticity and have a size of approximately 1 to 3 µm. Nano carbon is a conductive material composed of carbon particles of nanometer (nm) size mixed with resin.

[0136] A display device (1) according to one embodiment may include a second electrode layer (50) provided on a first electrode layer (30). For example, the second electrode layer (50) may be provided on the first electrode layer (30), and a light-emitting layer (40) may be provided between the first electrode layer (30) and the second electrode layer (50).

[0137] A display device (1) according to one embodiment may include a second electrode layer (50) provided on a light-emitting layer (40).

[0138] The second electrode layer (50) may include an ITO (Indium Tin Oxide) transparent electrode (51). The ITO transparent electrode (51) may have transparent properties and may be conductive. The characteristics of the ITO transparent electrode (51) are the same as those described above.

[0139] A plurality of vertical light-emitting elements (100R, 100G, 100B) can be electrically connected by an ITO transparent electrode (51). For example, the ITO transparent electrode (51) can be electrically connected by contacting the second electrode (120R, 120G, 120B) of each of the plurality of vertical light-emitting elements (100R, 100G, 100B).

[0140] The ITO transparent electrode (51) is electrically contacted with the first connector electrode (151) of the connector (150) to electrically connect a plurality of vertical light-emitting elements (100R, 100G, 100B) and the first connector electrode (151) of the connector (150).

[0141] FIG. 6 is a flowchart of a method for manufacturing a display device according to one embodiment.

[0142] FIG. 7 is a cross-sectional view illustrating a method for manufacturing a display device according to one embodiment.

[0143] Referring to FIGS. 6 and FIGS. 7, a method for manufacturing a display device (1) according to one embodiment may include a step (S1) of forming a first electrode layer (30) on a substrate (20).

[0144] The step (S1) of forming a first electrode layer (30) on a substrate (20) may include the step of forming a plurality of positive electrodes (31R, 31G, 31B) and a negative electrode (32) on the substrate (20).

[0145] Additionally, the step (S1) of forming a first electrode layer (30) on a substrate (20) may include the step of laminating an adhesive film (42) on the substrate (20).

[0146] For example, the step (S1) of forming a first electrode layer (30) on a substrate (20) may include the step of applying an adhesive film (42) containing a conductive ball (41) onto the substrate (20) while a plurality of positive electrodes (31R, 31G, 31B) and a negative electrode (32) are formed on the substrate (20). Accordingly, the conductive ball (41) may be disposed on the plurality of positive electrodes (31R, 31G, 31B) and the negative electrode (32).

[0147] A method for manufacturing a display device (1) according to one embodiment may include the step (S2) of forming a light-emitting layer (40) comprising a plurality of vertical light-emitting elements (100R, 100G, 100B) on a first electrode layer (30).

[0148] The step (S2) of forming a light-emitting layer (40) including a plurality of vertical light-emitting elements (100R, 100G, 100B) on a first electrode layer (30) may include the step of bonding or transferring the plurality of vertical light-emitting elements (100R, 100G, 100B) and a connector (150) to a substrate (20) on which an adhesive film (42) is laminated.

[0149] Bonding a plurality of vertical light-emitting elements (100R, 100G, 100B) and a connector (150) to a substrate (20) on which an adhesive film (42) is laminated may include pressing a relay substrate (not shown) on which a plurality of vertical light-emitting elements (100R, 100G, 100B) and a connector (150) are transferred with the substrate (20) on which the adhesive film (42) is laminated.

[0150] Transferring a plurality of vertical light-emitting elements (100R, 100G, 100B) and a connector (150) to a substrate (20) on which an adhesive film (42) is laminated may include separating the plurality of vertical light-emitting elements (100R, 100G, 100B) and the connector (150) from a relay substrate (not shown) on which the plurality of vertical light-emitting elements (100R, 100G, 100B) and the connector (150) are transferred, and attaching them to the substrate (20) on which the adhesive film (42) is laminated.

[0151] Through the step (S2) of forming a light-emitting layer (40) including a plurality of vertical light-emitting elements (100R, 100G, 100B) on a first electrode layer (30), the plurality of vertical light-emitting elements (100R, 100G, 100B) and the connector (150) can be seated within an adhesive film (42), and a light-emitting layer (40) including the plurality of vertical light-emitting elements (100R, 100G, 100B) and the connector (150) can be formed.

[0152] Additionally, when the step (S2) of forming a light-emitting layer (40) including a plurality of vertical light-emitting elements (100R, 100G, 100B) on the first electrode layer (30) is performed, the plurality of vertical light-emitting elements (100R, 100G, 100B) and the connector (150) can be electrically connected through the plurality of positive electrodes (31R, 31G, 31B) and negative electrodes (32) of the first electrode layer (30) and the conductive ball (41).

[0153] A method for manufacturing a display device (1) according to one embodiment may include the step (S3) of forming a second electrode layer (50) including an ITO transparent electrode (51) on a light-emitting layer (40).

[0154] The step (S3) of forming a second electrode layer (50) including an ITO transparent electrode (51) on a light-emitting layer (40) may include the step of stacking the ITO transparent electrode (51) on the light-emitting layer (40).

[0155] The step (S3) of forming the second electrode layer (50) may include the step of forming an ITO transparent electrode (51) through sputtering. The sputtering may be simultaneous sputtering using In2O3 and SnO2 targets, or may use an ITO (Indium Tin Oxide) target in which In2O3 and SnO2 are mixed in a certain ratio. When the ITO transparent electrode (51) is deposited on the light-emitting layer (40) using simultaneous sputtering, the composition of Sn can be controlled by adjusting the power applied to the SnO2 target. When a single ITO target is used, the composition of Sn can be controlled by adjusting the mixing ratio of In2O3 and SnO2.

[0156] The step (S3) of forming the second electrode layer (50) may be characterized by the omission of a heat treatment step after sputtering. According to the conventional manufacturing method, the mixing ratio of In2O3 and SnO2 is 90:10 weight% and involves a heat treatment step at 250 to 500°C after sputtering. However, according to one embodiment of the present disclosure, by controlling the composition ratio of Sn to 14 to 22 weight%, preferably 17 to 22 weight%, and more preferably 19 to 21 weight%, the heat treatment step can be omitted and the ITO transparent electrode (51) can be laminated on the light-emitting layer (40) at room temperature.

[0157] When the step (S3) of forming a second electrode layer (50) including an ITO transparent electrode (51) on a light-emitting layer (40) is performed, a plurality of vertical light-emitting elements (100R, 100G, 100B) can be electrically connected through a connector (150) and an ITO transparent electrode (51).

[0158] FIGS. 8 and 9 illustrate an example in which a transparent electrode and a cathode are electrically contacted according to one embodiment.

[0159] Referring to FIGS. 8 and 9, an ITO transparent electrode (51) and a cathode (32) according to one embodiment can be electrically contacted.

[0160] Referring to FIG. 8, the ITO transparent electrode (51) can be electrically contacted with the cathode (32) provided on the substrate (20).

[0161] For example, the ITO transparent electrode (51) may have a shape inclined toward the substrate (20) (e.g., 51a in FIG. 8). Additionally, the ITO transparent electrode (51) may have a region (e.g., 51b in FIG. 8) that is electrically in contact with a cathode (32) provided on the substrate (20).

[0162] The ITO transparent electrode (51) provided on the second electrode layer (50) can be electrically contacted with the cathode (32) provided on the substrate (20) through a shape inclined toward the substrate (20) of the ITO transparent electrode (51) (e.g., 51a in FIG. 8) and a region that is electrically contacted with the cathode (32) provided on the substrate (20) (e.g., 51b in FIG. 8).

[0163] Referring to FIG. 9, the cathode (32) according to one embodiment can be electrically contacted with an ITO transparent electrode (51) provided in the second electrode layer (50).

[0164] For example, the cathode (32) may be provided on a separate wiring layer (80) rather than on the substrate (20) and may be electrically contacted with an ITO transparent electrode (51) provided on the second electrode layer (50). The wiring layer (80) may include a layer on which wiring is provided to transmit a signal for supplying a driving current to a thin film transistor (TFT) placed on the substrate (20).

[0165] That is, referring to FIGS. 8 and 9, the display device (1) according to the present disclosure can electrically contact the ITO transparent electrode (51) and the negative electrode (32) even if the connector (150) is omitted.

[0166] Meanwhile, the disclosed embodiments may be implemented in the form of a recording medium that stores instructions executable by a computer. The instructions may be stored in the form of program code and, when executed by a processor, may generate a program module to perform the operation of the disclosed embodiments. The recording medium may be implemented as a computer-readable recording medium.

[0167] Computer-readable recording media include all types of recording media that store instructions that can be decoded by a computer. Examples include ROM (read-only memory), RAM (random access memory), magnetic tape, magnetic disk, flash memory, optical data storage devices, etc.

[0168] Additionally, computer-readable recording media may be provided in the form of non-transitory storage media. Here, 'non-transitory storage media' simply means that it is a tangible device and does not contain a signal (e.g., electromagnetic waves), and this term does not distinguish between cases where data is stored semi-permanently and cases where it is stored temporarily. For example, 'non-transitory storage media' may include a buffer in which data is stored temporarily.

[0169] According to one embodiment, the method according to the various embodiments disclosed herein may be provided as included in a computer program product. The computer program product may be traded between a seller and a buyer as a product. The computer program product may be distributed in the form of a device-readable recording medium (e.g., compact disc read-only memory (CD-ROM)), or distributed online (e.g., download or upload) through an application store (e.g., Play Store™) or directly between two user devices (e.g., smartphones). In the case of online distribution, at least a portion of the computer program product (e.g., downloadable app) may be temporarily stored or temporarily created on a device-readable recording medium, such as the memory of a manufacturer's server, an application store's server, or a relay server.

[0170] An electronic device according to one embodiment of the present disclosure may include: a substrate (20); electrodes (110R, 110G, 110B, 120R, 120G, 120B, 151, 152, 30, 31R, 31G, 31B, 32, 50) formed on the substrate (20); and an ITO (Indium Tin Oxide) transparent electrode (51) formed on the electrodes (110R, 110G, 110B, 120R, 120G, 120B, 151, 152, 30, 31R, 31G, 31B, 32, 50). The ITO transparent electrode (51) may be characterized by containing 14 to 22 weight% of Sn.

[0171] The above ITO transparent electrode (51) may be characterized by containing 17 to 22 weight percent of Sn.

[0172] The above ITO transparent electrode (51) may be characterized by containing 19 to 21 weight percent of Sn.

[0173] The above ITO transparent electrode (51) may be characterized by further including at least one of Zn, Ga, and P as impurities.

[0174] The above ITO transparent electrode (51) may be characterized by further including at least one of a group 13 element or a group 15 element as an impurity.

[0175] The above ITO transparent electrode (51) may be characterized by having a thickness of 100 to 500 nm.

[0176] The above ITO transparent electrode (51) may be characterized by having a sheet resistance of 40.0 Ω / sq. or less.

[0177] The above ITO transparent electrode (51) may be characterized by having an average transmittance of 80.00% or more in the visible light region.

[0178] The above electronic device may be characterized as being one of a micro LED, a solar cell, or an OLED.

[0179] A display device (1) according to one embodiment of the present disclosure may include: a substrate (20); a first electrode layer (30) provided on the substrate; a second electrode layer (50) provided on the first electrode layer (30) and including an ITO transparent electrode (51); and a light-emitting layer (40) provided between the first electrode layer (30) and the second electrode layer (50) and including a plurality of vertical light-emitting elements (100R, 100G, 100B). The ITO transparent electrode (51) may be characterized by including 14 to 22 weight% of Sn.

[0180] The above ITO transparent electrode (51) may be characterized by containing 17 to 22 weight percent of Sn.

[0181] The above ITO transparent electrode (51) may be characterized by containing 19 to 21 weight percent of Sn.

[0182] The above ITO transparent electrode (51) may be characterized by further including at least one of Zn, Ga, and P as impurities.

[0183] The above ITO transparent electrode (51) may be characterized by further including at least one of a group 13 element or a group 15 element as an impurity.

[0184] The above ITO transparent electrode (51) may be characterized by having a thickness of 100 to 500 nm.

[0185] The above ITO transparent electrode (51) may be characterized by having a sheet resistance of 40.0 Ω / sq. or less.

[0186] The above ITO transparent electrode (51) may be characterized by having an average transmittance of 80.00% or more in the visible light region.

[0187] The light-emitting layer (40) may further include a connector (150) that electrically connects the ITO transparent electrode (51) and the first electrode layer (30). The first electrode layer (30) may include at least one positive electrode (31R, 31G, 31B) that is electrically in contact with the first electrode (110R, 110G, 110B) of the plurality of vertical light-emitting elements (100R, 100G, 100B) and at least one negative electrode (32) that is electrically in contact with the connector (150). The ITO transparent electrode (51) may be electrically in contact with the second electrode (120R, 120G, 120B) of the plurality of vertical light-emitting elements (100R, 100G, 100B).

[0188] The connector (150) may include a first connector electrode (151) that is electrically in contact with the ITO transparent electrode (51) and a second connector electrode (152) that is electrically in contact with the at least one negative electrode (32).

[0189] A method for manufacturing a display device (1) according to one embodiment of the present disclosure may include: a step (S1) of forming a first electrode layer (30) on a substrate (20); a step (S2) of forming a light-emitting layer (40) comprising a plurality of vertical light-emitting elements (100R, 100G, 100B) on the first electrode layer (30); and a step (S3) of forming a second electrode layer (50) comprising an ITO transparent electrode (51) on the light-emitting layer (40). The step (S3) of forming the second electrode layer (50) may include a step of forming the ITO transparent electrode (51) through sputtering. The step of forming the second electrode layer (50) may be characterized in that a heat treatment step after sputtering can be omitted.

[0190] Specific embodiments have been illustrated and described above. However, the invention is not limited to the embodiments described above, and those skilled in the art may make various modifications without departing from the essence of the technical concept of the invention as described in the following claims.

[0191] (Explanation of symbols)

[0192] 1; Display device

[0193] 10; Display module

[0194] 100R, 100G, 100B; Vertical light-emitting diode

[0195] 110R, 110G, 110B; first electrode

[0196] 111R, 111G, 111B; first semiconductor layer

[0197] 120R, 120G, 120B; second electrode

[0198] 121R, 121G, 121B; 2nd semiconductor layer

[0199] 130R, 130G, 130B; active layer

[0200] 150; connector

[0201] 151; first connector electrode

[0202] 152; second connector electrode

[0203] 153; Connector semiconductor layer

[0204] 20; substrate

[0205] 30; first electrode layer

[0206] 31R, 31G, 31B; anode

[0207] 32; cathode

[0208] 40; light-emitting layer

[0209] 41; Challenge ball

[0210] 42; adhesive film

[0211] 50; second electrode layer

[0212] 51; ITO transparent electrode

[0213] 80; Wiring layer

Claims

1. Substrate; Electrode formed on the above substrate; A transparent ITO (Indium Tin Oxide) electrode formed on the above electrode; comprising An electronic device characterized in that the above ITO transparent electrode contains 14 to 22 weight% of Sn.

2. In Paragraph 1, An electronic device characterized in that the above ITO transparent electrode contains 17 to 22 weight percent of Sn.

3. In Paragraph 1, An electronic device characterized in that the above ITO transparent electrode contains 19 to 21 weight percent of Sn.

4. In Paragraph 1, An electronic device characterized in that the above-mentioned ITO transparent electrode further comprises at least one of Zn, Ga, and P as impurities.

5. In Paragraph 1, An electronic device characterized in that the above-described ITO transparent electrode further comprises at least one of a Group 13 element or a Group 15 element as an impurity.

6. In Paragraph 1, An electronic device characterized in that the above ITO transparent electrode has a thickness of 100 to 500 nm.

7. In Paragraph 1, An electronic device characterized in that the above ITO transparent electrode has a sheet resistance of 40.0 Ω / sq. or less.

8. In Paragraph 1, An electronic device characterized by the above-described ITO transparent electrode having an average transmittance of 80.00% or more in the visible light region.

9. In any one of paragraphs 1 through 8, The electronic device is characterized by being one of a micro LED, a solar cell, or an OLED.

10. Substrate; A first electrode layer provided on the above substrate; A second electrode layer provided on the first electrode layer and comprising an ITO transparent electrode; and A light-emitting layer provided between the first electrode layer and the second electrode layer and comprising a plurality of vertical light-emitting elements; A display device characterized in that the above ITO transparent electrode contains 14 to 22 weight percent of Sn.

11. In Paragraph 10, A display device characterized in that the above ITO transparent electrode contains 17 to 22 weight percent of Sn.

12. In Paragraph 10, A display device characterized in that the above ITO transparent electrode contains 19 to 21 weight percent of Sn.

13. In Paragraph 10, A display device characterized in that the above-mentioned ITO transparent electrode further comprises at least one of Zn, Ga, and P as impurities.

14. In Paragraph 10, A display device characterized in that the above-described ITO transparent electrode further comprises at least one of a Group 13 element or a Group 15 element as an impurity.

15. In Paragraph 10, A display device characterized in that the above ITO transparent electrode has a thickness of 100 to 500 nm.

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