Atmospheric pressure plasma treatment apparatus and EFEM using same

Abstract

Disclosed is an atmospheric pressure plasma treatment apparatus comprising: a plasma chamber having an entrance through which a wafer can enter and exit; and a plasma reactor that is disposed on the ceiling of the plasma chamber and causes atmospheric pressure plasma to react with the wafer that entered the plasma chamber, wherein the wafer can be taken into and out of the plasma chamber by an ATM robot of an EFEM, and the plasma reactor is configured to generate direct plasma by identifying the wafer, which is to be plasma-treated and enters the plasma chamber via the entrance, as a ground electrode. According to the present invention, process residue on the wafer can be removed by plasma in the EFEM.

Description

Atmospheric pressure plasma treatment device and EFE using the same

[0001] The present invention relates to an atmospheric pressure plasma processing apparatus and an EFEM using the same, and more specifically, to an atmospheric pressure plasma processing apparatus used in semiconductor processes and an EFEM (equipment front end module) including the same.

[0002] The contents presented in this section are intended merely to provide background information for the present invention and do not constitute prior art.

[0003] In the semiconductor manufacturing process, wafers are processed within cleanrooms to improve semiconductor yield and quality. However, as the high integration of semiconductor devices, the miniaturization of circuits, and the increase in wafer size progress, maintaining the entire cleanroom in a clean state has become technically and costly difficult.

[0004] Therefore, recently, cleanliness management has been performed only on the space surrounding the wafer. To achieve this, the wafer is stored inside a sealed storage container called a front-opening unified pod (FOUP), and a module called an equipment front end module (EFEM) is used to transfer the wafer between the process equipment that processes the wafer and the FOUP.

[0005] As a technology related to the present invention, an EFEM system disclosed in the Korean Registered Patent Publication discloses a control unit that causes the downward airflow of the wafer transport chamber to flow inward toward the inside of the transport vessel or in the opposite direction toward the transport vessel, depending on the internal environment of the transport vessel. This related technology is similar to the present invention in that it is an EFEM system, but the two inventions differ in structure and effect in that it relates to controlling the downward airflow of the transport chamber, whereas the present invention utilizes atmospheric pressure plasma.

[0006] One problem that the present invention aims to solve is to provide an atmospheric pressure plasma treatment apparatus capable of treating a wafer with atmospheric pressure plasma before or after a wafer processing process, and an EFEM including the same.

[0007] One problem that the present invention aims to solve is to provide an atmospheric pressure plasma treatment apparatus capable of reducing the surface of an oxidized wafer and removing process residues contaminated on the wafer, and an EFEM including the same.

[0008] The problem that the present invention aims to solve is not limited to the problems mentioned above, and other unmentioned problems will be clearly understood by those skilled in the art from the description below.

[0009] In order to achieve the above objectives, according to one embodiment of the technical concept of the present invention, an atmospheric pressure plasma processing device is disclosed, comprising: a plasma chamber having an entrance / exit port formed to allow a wafer to enter and exit; and a plasma reactor disposed on the ceiling of the plasma chamber to react atmospheric pressure plasma with a wafer that has entered the interior of the plasma chamber, wherein the wafer can enter and exit the plasma chamber by an ATM robot of an Equipment Front End Module (EFEM), and the plasma reactor is configured to recognize the wafer, which is to be plasma processed, as a ground electrode and generate direct plasma by entering the interior of the plasma chamber through the entrance / exit port.

[0010] In addition, the atmospheric pressure plasma treatment device is characterized in that the plasma reactor is positioned closer to the entrance / exit with respect to the center of the plasma chamber.

[0011] In addition, the atmospheric pressure plasma processing device can be configured so that the plasma reactor can cover the entire surface of the wafer as the wafer can be moved by an ATM robot inside the plasma chamber.

[0012] In addition, the atmospheric pressure plasma treatment device may be configured such that the plasma reactor includes a positive electrode; and a pair of auxiliary electrodes installed with a gap between both ends of the positive electrode.

[0013] Additionally, the atmospheric pressure plasma processing device may be configured to further include: a susceptor that receives a wafer from an ATM robot or delivers the wafer to said ATM robot when the wafer enters or exits; and a moving means that moves the susceptor horizontally to evenly apply atmospheric pressure plasma to the entire wafer.

[0014] In addition, the atmospheric pressure plasma treatment device may be configured to include a mass flow controller that controls the inflow of atmospheric gas inside the plasma chamber.

[0015] Additionally, the atmospheric pressure plasma treatment device further comprises an exhaust line connected to the plasma chamber; a pressure control valve installed in the exhaust line; and a control unit that controls the mass flow controller and the pressure control valve, wherein the control unit may be configured to control the mass flow controller and the pressure control valve during a plasma reaction so that the pressure inside the plasma chamber is maintained at a negative pressure.

[0016] Additionally, the atmospheric pressure plasma processing device may be configured to include a plasma reactor, a connecting part connected to an opening formed in the ceiling of the plasma chamber; and a hydraulic lever assembly having the functions of connecting, supporting, and releasing the connecting part to the plasma chamber.

[0017] In addition, the atmospheric pressure plasma processing device may be configured such that the inlet and outlet of the plasma chamber include an open slit of the opening type, or further include the open slit and a slit valve that controls the opening and closing of the open slit.

[0018] To achieve the above objectives, according to one embodiment of the technical concept of the present invention, an EFEM is disclosed, comprising: a transfer chamber configured internally for connecting to a load port, a load lock, and a process module through an opening provided on the side and for transferring a wafer from the load port to the load lock or the process module; a load port equipped with a transfer container (112) for storing a plurality of wafers, wherein the transfer chamber is configured to include an atmospheric pressure plasma processing device that processes plasma on the wafer before, after, or before and after the wafer is processed by the process module; an ATM robot that transfers and returns the wafer between the transfer container and the atmospheric pressure plasma processing device and between the atmospheric pressure plasma processing device and the load lock; and an aligner that aligns the position of the transferred wafer.

[0019] Additionally, the EFEM includes an atmospheric pressure plasma processing device comprising: a plasma chamber with an entrance formed therein to allow the entry and exit of a wafer; and a plasma reactor positioned on the ceiling of the plasma chamber to react atmospheric pressure plasma with a wafer that has entered the interior of the plasma chamber, wherein the wafer can enter and exit the plasma chamber by means of an ATM robot of the EFEM, and the plasma reactor can be configured to generate direct plasma by recognizing the wafer entering the interior of the plasma chamber through the entrance as a ground electrode.

[0020] Specific details of other embodiments are included in "Specific details for implementing the invention" and the attached "drawings".

[0021] The advantages and / or features of the present invention and the methods for achieving them will become clear by referring to the various embodiments described below in detail together with the accompanying drawings.

[0022] However, it should be understood that the present invention is not limited to the configurations of each embodiment disclosed below, but may be implemented in various different forms, and that each embodiment disclosed in this specification is provided merely to make the disclosure of the present invention complete and to fully inform those skilled in the art of the scope of the present invention, and that the present invention is defined only by the scope of each claim of the claims.

[0023] According to the present invention, reduction treatment of the wafer and removal of process residues of the wafer are possible within the EFEM or in a space communicating with the EFEM.

[0024] In addition, atmospheric pressure plasma treatment can be applied to the wafer before, after, or both before and after the wafer processing process.

[0025] The effects obtainable by the wafer processing apparatus according to the technical concept of the present invention are not limited to the effects mentioned above, and other unmentioned effects will be clearly understood by those skilled in the art to which the present invention belongs from the description below.

[0026] FIG. 1 is an exemplary diagram of an EFEM according to a first embodiment of the present invention.

[0027] FIG. 2 is a plan view according to a first embodiment of the EFEM depicted in FIG. 1.

[0028] FIG. 3 is a plan view according to a second embodiment of EFEM.

[0029] FIG. 4 is a block diagram according to a first embodiment of an atmospheric pressure plasma generator equipped in the EFEM of FIG. 1 or FIG. 2.

[0030] FIG. 5 is a block diagram according to a second embodiment of an atmospheric pressure plasma generator equipped in the EFEM of FIG. 1 or FIG. 2.

[0031] FIG. 6 is a block diagram according to an embodiment of the plasma generator of FIG. 4 or FIG. 5.

[0032] FIG. 7 is an illustrative diagram according to a third embodiment of an atmospheric pressure plasma generator equipped in the EFEM of FIG. 1 or FIG. 2.

[0033] FIG. 8 is a flowchart of plasma treatment prior to the process using an atmospheric pressure plasma generator equipped in the EFEM of FIG. 1 or FIG. 2.

[0034] FIG. 9 is a flowchart of plasma treatment after a process using an atmospheric pressure plasma generator equipped in the EFEM of FIG. 1 or FIG. 2.

[0035] Before describing the present invention in detail, it should be understood that the terms and words used in this specification should not be interpreted as being limited to their ordinary or dictionary meanings, and that the inventor of the present invention may appropriately define and use the concepts of various terms to best describe their invention, and furthermore, that these terms and words should be interpreted in a meaning and concept consistent with the technical spirit of the present invention.

[0036] In other words, it should be understood that the terms used in this specification are used merely to describe preferred embodiments of the present invention and are not intended to specifically limit the content of the present invention, and that these terms are defined in consideration of various possibilities of the present invention.

[0037] In addition, it should be noted that in this specification, singular expressions may include plural expressions unless the context clearly indicates a different meaning, and that even if they are expressed in a similarly plural form, they may include the meaning of the singular.

[0038] Throughout this specification, where it is stated that a component "includes" another component, unless specifically stated otherwise, this may mean that it does not exclude any other component but may include any other component.

[0039] Furthermore, it should be noted that in cases where it is stated that a component "exists inside or is installed in connection with" another component, this component may be installed in direct connection or contact with the other component, or it may be installed at a certain distance apart, and in the case where it is installed at a certain distance apart, there may be a third component or means for fixing or connecting the component to the other component, and a description of this third component or means may be omitted.

[0040] On the other hand, if it is stated that one component is "directly connected" or "directly connected" to another component, it should be understood that there is no third component or means.

[0041] Likewise, other expressions describing the relationship between each component, such as “between” and “right between”, or “adjacent to” and “directly adjacent to”, should be interpreted as having the same intent.

[0042] In addition, it should be understood that in this specification, terms such as “one side,” “other side,” “one side,” “other side,” “first,” “second,” etc., are used to clearly distinguish one component from another component, and that the meaning of the component is not restricted by such terms.

[0043] In addition, position-related terms such as "up," "down," "left," and "right" used in this specification should be understood as indicating the relative position of the corresponding component in the drawing, and unless an absolute position is specified, these position-related terms should not be understood as referring to an absolute position.

[0044] Furthermore, in specifying the reference numerals for each component of each drawing in this specification, the same component has the same reference numeral even if it is shown in different drawings; that is, the same reference numeral throughout the specification indicates the same component.

[0045] In the drawings attached to this specification, the size, location, connection relationships, etc., of each component constituting the present invention may be described in a partially exaggerated, reduced, or omitted manner for the convenience of explanation or to sufficiently clearly convey the concept of the present invention, and therefore, the proportions or scale may not be strictly accurate.

[0046] In addition, in the following description of the present invention, detailed descriptions of components that are deemed to unnecessarily obscure the essence of the present invention, such as known technologies including prior art, may be omitted.

[0047] Hereinafter, embodiments of the present invention will be described in detail with reference to the relevant drawings.

[0048] In the xyz coordinate axes shown in each drawing, the x-axis direction is set as the length direction of EFEM (100), the y-axis direction as the width direction, and the z-axis direction as the height direction.

[0049] An EFEM according to the prior art is an interface module of process equipment that supplies a wafer in a transfer container (FOUP) to a process module in a semiconductor manufacturing line, and an atmospheric pressure robot provided inside the EFEM supplies the wafer in the transfer container to the process module.

[0050] An EFEM (100) according to one embodiment of the present invention is characterized by having a function of transferring a wafer and a function of treating plasma on the wafer.

[0051] FIG. 1 is an exemplary diagram of an EFEM according to a first embodiment of the present invention.

[0052] FIG. 2 is a plan view according to a first embodiment of the EFEM depicted in FIG. 1.

[0053] FIG. 3 is a plan view according to a second embodiment of EFEM.

[0054] Referring to FIGS. 1 to 3, the EFEM (100) is a device for transporting a wafer (W) under atmospheric pressure or positive pressure conditions. The EFEM (100) may be configured to include a transport chamber (110) and a plurality of load ports (111). The transport chamber (110) of the EFEM (100) according to an embodiment of the present invention is characterized by including an atmospheric pressure plasma processing device (150).

[0055] A plurality of load ports (111) may be provided on the front side of the return room (110). The load port (111) includes a transfer container (front opening unified pod, FOUP) (112) that stores a plurality of wafers (W) in layers.

[0056] A transfer container (front opening unified pod, FOUP (112)) can be loaded into the front opening of the load port (111). A wafer loaded into the interior of the transfer container (112) can be transferred to the return room (110) from the rear opening of the load port (111).

[0057] The return chamber (110) is connected to the rear side of the load port (111). A wafer loaded in the transfer container (112) can be transferred to the return chamber (110), or a wafer that has been transferred can be loaded back into the transfer container (112).

[0058] The atmospheric pressure plasma processing device (150) may be provided inside the return chamber (110) or may be combined with the return chamber (110) through docking.

[0059]

[0060] Referring to FIGS. 2 and 3, the return chamber (110) may be configured to include an aligner (120), an atmospheric pressure robot (130), and an atmospheric pressure plasma processing device (150).

[0061] The aligner (120) has the function of aligning the position of the wafer removed from the load port (111). When the atmospheric pressure robot (130) removes the wafer (W) from the transfer container (112) and loads it onto the aligner (120), the aligner (120) transmits information regarding the difference between the current position and the target position of the wafer (W) to the atmospheric pressure robot (130), and the atmospheric pressure robot (130) loads the wafer (W) using the transmitted information.

[0062] The atmospheric pressure robot (130) has the function of taking out and transporting a wafer stored in the transport container (FOUP) (112) of the load port (111). As described above, the atmospheric pressure robot (130) has the function of taking out or loading a wafer (W) from the transport container (112) in synchronization with the aligner (120).

[0063] The atmospheric pressure plasma treatment device (150) has the function of treating atmospheric pressure plasma on a wafer (W) transported by an atmospheric pressure robot (130) while located inside the EFEM (100) or docked with the EFEM (100).

[0064] Referring to FIG. 2, an embodiment is depicted in which an atmospheric pressure plasma treatment device (150) is placed inside an EFEM (100).

[0065] Referring to FIG. 3, an atmospheric pressure plasma processing device (150) is depicted docked with the EFEM (100) outside the EFEM (100). The atmospheric pressure plasma processing device (150) is placed inside a docking device (140), and the docking device (140) can engage and disengage docking with the EFEM (100), and a wafer (W) can be moved through a door installed between the atmospheric pressure plasma processing device (150) and the EFEM (100). That is, the atmospheric pressure robot (130) can take the wafer (W) out of the transfer container (112) and move it into the plasma chamber (151) of the atmospheric pressure plasma processing device (150), and after the plasma processing is completed, the wafer (W) can be moved back from the plasma chamber (151) to the transfer container (112).

[0066] The atmospheric pressure plasma treatment device (150) can treat atmospheric pressure plasma before and after, or both before and after, the treatment process by the process module (400) connected to the EFEM (100). The atmospheric pressure plasma treatment device (150) can treat atmospheric pressure plasma on the wafer before the wafer treatment process to activate the surface of the wafer, and has the function of treating atmospheric pressure plasma on the wafer after the wafer treatment process to remove reaction residues from the wafer.

[0067] FIG. 4 is a block diagram according to a first embodiment of an atmospheric pressure plasma generator equipped in the EFEM of FIG. 1 or FIG. 2.

[0068] Referring to FIG. 4, the atmospheric pressure plasma processing device (150) can be classified into a first embodiment with an open type having an inlet / outlet (163) in the form of an open opening, and a second embodiment with a closed type having a slit valve (164) as shown in FIG. 6, depending on the shape of the plasma chamber (151). We will start by describing the plasma chamber (151) with an open opening.

[0069] Referring again to FIG. 4, the atmospheric pressure plasma treatment device (150) may be configured to include a plasma chamber (151), a plasma reactor (152), a mass flow controller (MFC) (153), a matcher (154), a power generator (155), a bottom plate (161), an exhaust line (156), a pressure control valve (157), and a purge gas nozzle (190).

[0070] The plasma chamber (151) includes an entrance (163) that allows the entry and exit of a wafer (W) corresponding to the target object, and a space in which a plasma reactor (152) and a purge nitrogen nozzle (190) are arranged inside. The wafer (W) can enter and exit through an entrance (163), i.e., a slit, formed in an open shape on one side of the plasma chamber (151). An end effector (133) is provided at one end of the robot arm (131) of the atmospheric pressure robot (130), and the wafer (W) can enter and exit through the entrance (163) while placed on the end effector (133).

[0071] A plasma reactor (152) can be placed on the ceiling of a plasma chamber (151). The plasma reactor (152) can react atmospheric pressure plasma with a wafer (W) that has entered the interior of the plasma chamber (151). That is, the plasma reactor (152) uses a matcher (154) and a power generator (155) to form a discharge between the positive electrode (152a) and the negative electrode, i.e., the wafer (W) corresponding to the ground electrode, and supplies and reacts plasma gas supplied through a mass flow controller (153) in the discharged space to create a plasma frame, and causes the plasma frame to flow in the direction of gravity to treat the surface of the wafer (W).

[0072] As the end effector (133) of the atmospheric pressure robot (130) installed inside the EFEM moves the wafer (W), the entire surface of the wafer (W) can be covered by a plasma frame generated at the bottom of the anode (152a). In order to react the direct plasma on the wafer (W) with the help of the atmospheric pressure robot (130), it is preferable that the plasma reactor (152) be positioned close to the entrance (163) with respect to the central part of the plasma chamber (151). The atmospheric pressure robot (130) can use the robot arm (131) and the end effector (133) to grasp the wafer (W) loaded in the transfer container (FOUP) of the load port (111), move the coordinates, and supply the wafer (W) into the plasma chamber (151).

[0073] The plasma reactor (152) can be integrally formed with the matcher (154). That is, the matcher (154) can be placed on top of the plasma reactor (152). The plasma reactor (152) and the matcher (154) can be mechanically and electrically connected.

[0074] The plasma reactor (152) can use a frequency of 2 MHz to 60 MHz.

[0075] A portion of the plasma reactor (152) is exposed to the outside of the plasma chamber (151), and a portion is contained within the plasma chamber (151). Thus, a portion of the plasma reactor (152) is inserted into the plasma chamber (151), and the outside of the chamber and the inside of the chamber can be sealed by the sealing portion (151a).

[0076] As the wafer (W) enters and exits, the wafer (W) acts as a ground, causing the plasma reactor (152) to automatically turn on and generate a main plasma frame of atmospheric pressure plasma. That is, the plasma reactor (152) can generate a direct plasma frame by recognizing the wafer (W) entering the interior of the plasma chamber (151) through the entrance (163) as a ground electrode. Here, the doped wafer (W) serves as both the negative electrode and the target for plasma processing.

[0077] A mass flow controller (153) is positioned between a gas chamber (not shown) and a plasma chamber (151) and has the function of controlling the amount of gas supplied from the gas chamber to the plasma chamber (151). The gas chamber accelerates electrons to maintain a mixed state of neutral atoms, molecules, cations, and electrons through collisions. The gas chamber may be positioned outside the EFEM (100). The gas chamber may store an inert gas, such as argon (Ar), helium (He), or neon (Ne), as the plasma gas and supply gas to the plasma chamber (151) under the control of the mass flow controller (MFC) (153). As the plasma gas, argon 98% or more with the remainder of 2% or less hydrogen, oxygen, or nitrogen, or helium 95% or more with the remainder of 5% or less hydrogen, oxygen, or nitrogen may be used.

[0078] The matcher (154) has the function of adjusting the ignition impedance in response to changes in the impedance of the plasma chamber (151) between the plasma chamber (151) and the power generator (155).

[0079] The matcher (154) is positioned so as to be exposed to the outside of the plasma chamber (151), and the plasma reactor (152) is positioned inside the plasma chamber (151). Accordingly, the cooling fan included in the matcher (154) is also positioned outside the plasma chamber (151). The plasma reactor (152) integrated with the matcher is characterized by having a part exposed to the outside of the plasma chamber (151), making disassembly, assembly, and maintenance easy. Since the matcher (154) is cooled by the cooling fan outside the plasma chamber (151), there is an advantage that water cooling is not required. In addition, there is an advantage that particles do not structurally enter the inside of the plasma chamber (151). There is also no concern about particles being generated by the fan, etc.

[0080] The power generator (155) has the function of supplying power to the plasma reactor (152). The power generator (155) can be electrically connected to the plasma reactor (152) through the matcher (154).

[0081] The frequency band of the power generator (155) may be 2 MHz to 60 MHz. Plasma is generated between the plasma reactor (152) and the wafer (W) to treat the wafer surface. The plasma reactor (152) is fixed, and the wafer susceptor (158) moves while holding the wafer (W), thereby treating the wafer surface with plasma.

[0082] The bottom plate (161) can be installed inside the plasma chamber (151), separated from the plasma reactor (152), and close to the bottom of the plasma chamber (151). The bottom plate (161) is plate-shaped, and a plurality of through holes (161a) are formed in the plate, so that the amount of atmosphere exhausted through the through holes (161a) via the exhaust line (156) is evenly distributed in the plasma chamber (151).

[0083] The exhaust line (156) has the function of exhausting gas inside the plasma chamber (151). The exhaust line (156) can be connected to the bottom of the plasma chamber (151).

[0084] The pressure control valve (157) has the function of controlling the pressure inside the plasma chamber (151). The pressure control valve (157) can be installed in the exhaust line (156).

[0085] The purge gas nozzle (190) corresponds to a nozzle that discharges nitrogen (N2) to change the atmosphere of the plasma chamber (151) from air to nitrogen (N2). The purge gas nozzle (10) is installed inside the plasma chamber (151) and can be connected to an external nitrogen tank via a mass flow controller (153).

[0086] Overall, the control unit (210) can control the detailed operation of the atmospheric pressure plasma treatment device (150). Before treating the wafer (W) with atmospheric pressure plasma, the control unit (210) can form a nitrogen atmosphere pressure inside the plasma chamber (151) in the form of negative pressure, which is lower than atmospheric pressure, by controlling the operation of the mass flow controller (153) and the pressure control valve (157). Then, the control unit (210) operates the plasma reactor (152) according to the movement of the wafer (W) to enable atmospheric pressure plasma treatment of the surface of the wafer (W).

[0087] FIG. 5 is an illustrative diagram according to a first embodiment of an atmospheric pressure plasma generator equipped in the EFEM of FIG. 1 or FIG. 2.

[0088] Referring to FIG. 5, a plasma chamber (151) and a plasma reactor (152) constituting an atmospheric pressure plasma processing device (150) are depicted. The plasma reactor (152) can be coupled to the ceiling of the plasma chamber (151). That is, an opening is formed in a part of the ceiling of the plasma chamber (151), and the plasma chamber (151) and the plasma reactor (152) can be coupled through the opening.

[0089] The plasma reactor (152) may further include a connection part and a hydraulic lever assembly (170) connected to an opening formed in the ceiling of the plasma chamber (151). The connection part may be sealed by a sealing part (151a) as depicted in FIG. 4.

[0090] The plasma reactor (152) and the plasma chamber (151) are coupled to each other during operation and can be uncoupled at times when not in operation. To engage and disengage the coupling of the plasma reactor (152) and the plasma chamber (151), the plasma reactor (152) and the plasma chamber (151) can be coupled via a pair of hydraulic levers (173) of adjustable length.

[0091] Referring again to FIG. 5, the plasma chamber (151) and the plasma reactor (152) are connected via a hydraulic lever assembly (170), and the opening formed in the plasma chamber (151) can be opened and closed.

[0092] A pair of first brackets (171) may be attached to the front side and rear side of the plasma chamber (151). A pair of second brackets (172) may be attached to the front side and rear side of the plasma reactor (152). A hydraulic lever (173) with adjustable length is connected between the first bracket (171) and the second bracket (172). The hydraulic lever (173) is rotatable with respect to the first bracket (171) and the second bracket (172) and is adjustable in length, so that the plasma reactor (152) can be detached from the plasma chamber (151). Even when the plasma reactor (152) is detached from the plasma chamber (151), the hydraulic lever (173) can maintain the function of supporting the plasma reactor (152) with respect to the plasma chamber (151).

[0093] And the distance between the plasma reactor (152) and the plasma chamber (151) can be adjusted according to the action of the hydraulic lever (173). That is, the distance between the plasma reactor (152) and the wafer (W) can be adjusted.

[0094]

[0095] FIG. 6 is a block diagram according to a second embodiment of an atmospheric pressure plasma generator equipped in the EFEM of FIG. 1 or FIG. 2.

[0096] Referring to FIG. 6, an atmospheric pressure plasma treatment device (150) according to a second embodiment is depicted, which is equipped with a closed plasma chamber (151).

[0097] The atmospheric pressure plasma processing device (150) may be configured to further include a slit valve (164), a wafer susceptor (158), and a chuck moving device (159).

[0098] The slit valve (164) has the function of opening and closing the entrance and exit of the closed plasma chamber (151). That is, the slit valve (164) opens before the wafer enters the plasma chamber (151), closes when the wafer finishes entering, and opens again after plasma processing.

[0099] A wafer susceptor (158) is provided inside a plasma chamber (151) and has the function of holding a wafer (W). That is, a wafer (W) moved by a robot arm (131) and an end effector (133) can be plasma processed while being transferred to the wafer susceptor (158). The wafer susceptor (158) holding the wafer (W) can be moved in the left and right directions, that is, in the Y-axis direction. By moving the wafer susceptor (158), the plasma generated in the plasma reactor (152) inside the plasma chamber (151) can be evenly processed on the entire surface of the wafer (W).

[0100] The chuck moving device (159) has the function of moving the wafer susceptor (158) in the X-axis direction using a rail and a motor drive device. A T-shaped wafer susceptor (158) is connected to the motor drive device, and the chuck moving device (159) can reciprocate in the X-axis direction inside the plasma chamber (151) along the rail.

[0101] FIG. 7 is a block diagram according to an embodiment of the plasma generator of FIG. 4 or FIG. 6.

[0102] Referring to FIG. 7, the front of the plasma reactor (152) is depicted in the upper part of FIG. 7, and the side is depicted in the lower part.

[0103] In the original invention, the wafer (W) acts as a ground electrode, so a ground electrode is not required. As the wafer (W) moves, a voltage is formed between the wafer (W) and the anode (152a), and due to the voltage, a time delay occurs in the generation of a plasma flame (broken line), so the generation of the plasma flame may be unstable.

[0104] Accordingly, the plasma reactor (152) may further include an auxiliary electrode (152b) that generates an initial plasma frame to stably form a plasma frame. The auxiliary electrode (152b) relative to the anode (152a) is installed at both ends of the anode (152a) and acts as a negative electrode to react the plasma frame at the edge of the wafer (W) located furthest from the center of the anode (152a). Thus, an initial atmospheric pressure plasma frame can be formed by a discharge occurring in the gap (G2) between the anode (152a) and the auxiliary electrode (152b). The initial atmospheric pressure plasma frames generated at both ends of the anode (152a) can be connected to each other to form a main atmospheric pressure plasma frame.

[0105] The auxiliary electrode (152b) is in the form of a pair of L-shaped metal pieces as shown in FIG. 6 and consists of a portion that is joined to the plasma reactor (152) and a portion that forms a gap (G2).

[0106] Among the two auxiliary electrodes (152b), one auxiliary electrode (152b) forms an overlap region (OL) in the Y-axis direction with one end of the anode (152a), and the other auxiliary electrode (152b) forms an overlap region (OL) with the other end of the anode (152a). Additionally, the auxiliary electrode (152b) can be formed below the anode (152a) with a gap (G2) of a certain distance from the positive electrode (152a) in the Z-axis direction. An initial plasma flame is generated in advance in the overlap region (OL), and when the wafer (W) passes the lower part of the anode (152a) in the direction of the arrow (M), the wafer (W) itself acts as a negative electrode, and based on the initial plasma flame generated in advance in the overlap region (OL), a main plasma flame is generated in the entire area between the anode (152a) and the wafer (W).

[0107] The gap (G) between the bottom surface of the anode (152a) and the top surface of the wafer (W) can be controlled by moving the chuck moving device (159) up and down to ensure smooth generation of the plasma frame. When using argon as the plasma generating gas, it is required that the argon content be 95% or higher, and when using helium, the helium content be 80% or higher. The plasma gap (G1) is required to be within 6 mm from the top surface of the wafer (W) to the bottom surface of the positive electrode (152a).

[0108] Figure 8 is a flowchart of the plasma treatment prior to the process using the wafer processing apparatus depicted in Figure 1.

[0109] Figure 9 is a flowchart of plasma treatment after the process using the wafer processing apparatus depicted in Figure 1.

[0110] Referring to FIGS. 8 and 9, a return chamber (110) equipped with a load port (111) is depicted. The return chamber (110) may be configured to include an aligner (120), an ATM robot (atmospheric type robot) (130), and an atmospheric pressure plasma processing device (150).

[0111] The return room (110) and the transport module (300) can be connected via a load lock (200). And a process module (400) can be connected to the transport module (300).

[0112] The EFEM (100) is in an atmospheric pressure (ATM) state and the process module (400) is in a vacuum state. The load lock (200) has the function of maintaining the vacuum state of the process module (400).

[0113] The transport module (300) is located between the load lock (200) and the process module (400) and has the function of transporting wafers. A vacuum (VTM) robot is present in the transport module (300).

[0114] Referring to FIG. 8, a plasma treatment process (S100) prior to the wafer processing process by the process module (400) is depicted.

[0115] First, the atmospheric pressure robot (130) takes out a wafer from the transfer container (112) of the load port (111) (S110).

[0116] An atmospheric pressure plasma treatment device (150) treats the wafer with atmospheric pressure plasma (S120). By treating the wafer with plasma before the wafer treatment by the process module (400), the surface of the wafer can be activated.

[0117] The wafer is moved to an aligner (120), and the aligner (120) performs alignment of the wafer (S130). Here, the order of atmospheric pressure plasma treatment (S120) and alignment (S130) may be reversed. That is, atmospheric pressure plasma can be treated on the wafer after the wafer is aligned.

[0118] The atmospheric pressure robot (130) moves the wafer to the load lock (200), and the ATM / Vacuum Switch is performed at the load lock (200) (S140).

[0119] The vacuum robot (310) transfers the wafer to the process module (400), and the process module (400) processes the wafer (S150).

[0120] The vacuum robot (310) moves the wafer back to the load lock (200), and the atmospheric pressure robot (130) moves the wafer back into the inside of the transfer container (112) (S160).

[0121] Referring to FIG. 9, a plasma treatment process (S200) after a wafer treatment process by a process module (400) is depicted.

[0122] First, the atmospheric pressure robot (130) takes out a wafer from the transfer container (112) in the load port (111) (S210).

[0123] The atmospheric pressure robot (130) moves the wafer to the aligner (120), and the aligner (120) performs alignment of the wafer (S220).

[0124] The atmospheric pressure robot (130) moves the wafer to the load lock (200), and the ATM / Vacuum Switch is performed at the load lock (200) (S230).

[0125] The vacuum robot (310) transfers the wafer from the load lock (200) to the process module (400), and the wafer is processed in the process module (400) (S240).

[0126] When the wafer processing is completed, the vacuum robot (310) moves the wafer again from the process module (400) to the load lock (200) (S250).

[0127] The atmospheric pressure plasma treatment device (150) treats the wafer with atmospheric pressure plasma (S260). By treating with atmospheric pressure plasma after the process treatment by the process module (400), reaction residues on the wafer, such as gas and static electricity, can be removed.

[0128] The atmospheric pressure robot (130) moves the wafer back into the transfer container (112) (S270).

[0129] As such, according to one embodiment of the present invention, reduction treatment of the wafer and removal of process residues of the wafer are possible within the EFEM or in a space communicating with the EFEM.

[0130] In addition, atmospheric pressure plasma treatment can be applied to the wafer before, after, or both before and after the wafer processing process.

[0131] Although various preferred embodiments of the present invention have been described above with some examples, the descriptions of various embodiments described in the "Specific details for carrying out the invention" section are merely illustrative, and those skilled in the art to which the present invention pertains will understand that the present invention can be modified in various ways or equivalent embodiments can be carried out based on the above description.

[0132] In addition, since the present invention can be implemented in various other forms, the present invention is not limited by the description above. The above description is provided merely to make the disclosure of the present invention complete and to fully inform those skilled in the art of the scope of the present invention, and it should be understood that the present invention is defined only by each claim of the claims.

[0133] The present invention can be used in the field of manufacturing EFEMs used in semiconductor processes.

Claims

1. A plasma chamber having an entrance formed therein to allow the entry and exit of a wafer; and It includes a plasma reactor positioned on the ceiling of the plasma chamber to react atmospheric pressure plasma with the wafer that has entered the interior of the plasma chamber, and The wafer can enter and exit the plasma chamber by the ATM robot of the Equipment Front End Module (EFEM), and An atmospheric pressure plasma processing device configured such that the above plasma reactor recognizes the wafer, which is the target of plasma processing, as a ground electrode and enters the interior of the plasma chamber through the above entrance, thereby generating direct plasma.

2. In claim 1, the plasma reactor is, An atmospheric pressure plasma processing device characterized by being positioned closer to the entrance / exit based on the central part of the plasma chamber.

3. In Claim 2, An atmospheric pressure plasma processing apparatus in which the plasma reactor is configured to cover the entire surface of the wafer as the wafer can be moved by the ATM robot inside the plasma chamber.

4. In claim 1, the plasma reactor is, Positive electrode; and An atmospheric pressure plasma processing apparatus configured to include a pair of auxiliary electrodes installed with a gap between both ends of the above-mentioned positive electrodes.

5. In Claim 1, A susceptor that receives the wafer from the ATM robot or delivers the wafer to the ATM robot when the wafer enters or exits; and An atmospheric pressure plasma processing apparatus configured to further include a moving means for horizontally moving the susceptor to react the atmospheric pressure plasma evenly across the entire wafer.

6. In Claim 1, An atmospheric pressure plasma processing apparatus configured to include a mass flow controller for controlling the inflow of atmospheric gas inside the plasma chamber.

7. In Claim 6, An exhaust line connected to the above plasma chamber; A pressure control valve installed in the exhaust line above; and It further includes a control unit that controls the mass flow controller and the pressure control valve, and The above control unit is, An atmospheric pressure plasma processing apparatus configured to maintain a negative pressure within the plasma chamber by controlling the mass flow controller and the pressure control valve during a plasma reaction.

8. In claim 1, the plasma reactor is, A connecting part connected to an opening formed in the ceiling of the plasma chamber; and An atmospheric pressure plasma processing device configured to include a hydraulic lever assembly having the functions of connecting, supporting, and releasing the above-mentioned connection portion to the plasma chamber.

9. In claim 1, the entrance and exit of the plasma chamber are, Includes an open slit in the form of an opening, An atmospheric pressure plasma processing apparatus configured to include the above-mentioned open slit and a slit valve that controls the opening and closing of the above-mentioned open slit.

10. A transfer chamber configured internally for connecting to a load port, a load lock, and a process module through an opening provided on the side, and for transferring a wafer from the load port to the load lock or the process module; and The load port is equipped with a transfer container (112) for storing multiple wafers, and The above return room is, An atmospheric pressure plasma processing device that processes plasma on a wafer before, after, or before and after the wafer is processed by the above process module; An ATM robot for taking out and transporting the wafer between the transfer container and the atmospheric pressure plasma processing device and between the atmospheric pressure plasma processing device and the load lock; and Configured to include an aligner for aligning the position of the above-mentioned wafer, EFEM 11. In claim 10, the atmospheric pressure plasma treatment apparatus is, A plasma chamber having an entrance formed to allow the entry and exit of a wafer; and It includes a plasma reactor positioned on the ceiling of the plasma chamber to react atmospheric pressure plasma with the wafer that has entered the interior of the plasma chamber, and The wafer can enter and exit the plasma chamber by the ATM robot of the Equipment Front End Module (EFEM), and The above plasma reactor is configured to generate direct plasma by recognizing the wafer entering the interior of the plasma chamber through the above entrance as a ground electrode. EFEM

Images