Rugged planar mosfet with integrated trench sbd
The integration of a split gate MOSFET with a trench SBD in semiconductor devices addresses performance and cost challenges by reducing capacitance and improving reliability and switching speed, particularly in high-voltage applications.
WO2026155862A1PCT designated stage Publication Date: 2026-07-23MICROCHIP TECHNOLOGY INC
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Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- MICROCHIP TECHNOLOGY INC
- Filing Date
- 2025-12-17
- Publication Date
- 2026-07-23
AI Technical Summary
Technical Problem
Existing MOSFETs face challenges in improving performance and reducing cost while maintaining reliability and longevity, particularly in high-voltage applications.
Method used
Integration of a split gate configuration with a trench and an integrated Schottky barrier diode (SBD) within the MOSFET, which includes a trench oxide and doped material to reduce gate-to-drain capacitance and enhance reliability, and the SBD for faster switching and fault tolerance.
Benefits of technology
The integrated design improves switching time, reliability, and reduces replacement costs by minimizing gate-to-drain capacitance and providing fault tolerance through the SBD, enhancing overall performance.
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Figure US2025060008_23072026_PF_FP_ABST
Abstract
A semiconductor device including a volume of semiconductor material, an integrated metal-oxide semiconductor field-effect transistor (MOSFET), and an integrated Schottky barrier diode (SBD). The volume of semiconductor material presents laterally spaced first and second sides and a trench extending from the first end and being spaced between the sides. The MOSFET includes a split gate comprising a first gate section located adjacent the first end and a laterally spaced apart second gate section located adjacent the first end, and a gate oxide underlying the first and second gate sections. The SBD is located within the trench. The SBD includes a Schottky metal.
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